CN102143981B - 低释气性光刻胶组合物 - Google Patents
低释气性光刻胶组合物 Download PDFInfo
- Publication number
- CN102143981B CN102143981B CN2009801347011A CN200980134701A CN102143981B CN 102143981 B CN102143981 B CN 102143981B CN 2009801347011 A CN2009801347011 A CN 2009801347011A CN 200980134701 A CN200980134701 A CN 200980134701A CN 102143981 B CN102143981 B CN 102143981B
- Authority
- CN
- China
- Prior art keywords
- group
- repeating unit
- polymkeric substance
- photoetching compositions
- acid
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 0 C**(C)NC(*)(C(OC(C)(C)O1)=*)C1=* Chemical compound C**(C)NC(*)(C(OC(C)(C)O1)=*)C1=* 0.000 description 2
Images
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
- G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F36/00—Homopolymers and copolymers of compounds having one or more unsaturated aliphatic radicals, at least one having two or more carbon-to-carbon double bonds
- C08F36/02—Homopolymers and copolymers of compounds having one or more unsaturated aliphatic radicals, at least one having two or more carbon-to-carbon double bonds the radical having only two carbon-to-carbon double bonds
- C08F36/20—Homopolymers and copolymers of compounds having one or more unsaturated aliphatic radicals, at least one having two or more carbon-to-carbon double bonds the radical having only two carbon-to-carbon double bonds unconjugated
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F12/00—Homopolymers and copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by an aromatic carbocyclic ring
- C08F12/02—Monomers containing only one unsaturated aliphatic radical
- C08F12/04—Monomers containing only one unsaturated aliphatic radical containing one ring
- C08F12/14—Monomers containing only one unsaturated aliphatic radical containing one ring substituted by hetero atoms or groups containing heteroatoms
- C08F12/16—Halogens
- C08F12/20—Fluorine
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F12/00—Homopolymers and copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by an aromatic carbocyclic ring
- C08F12/02—Monomers containing only one unsaturated aliphatic radical
- C08F12/04—Monomers containing only one unsaturated aliphatic radical containing one ring
- C08F12/14—Monomers containing only one unsaturated aliphatic radical containing one ring substituted by hetero atoms or groups containing heteroatoms
- C08F12/22—Oxygen
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F12/00—Homopolymers and copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by an aromatic carbocyclic ring
- C08F12/02—Monomers containing only one unsaturated aliphatic radical
- C08F12/04—Monomers containing only one unsaturated aliphatic radical containing one ring
- C08F12/14—Monomers containing only one unsaturated aliphatic radical containing one ring substituted by hetero atoms or groups containing heteroatoms
- C08F12/22—Oxygen
- C08F12/24—Phenols or alcohols
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F12/00—Homopolymers and copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by an aromatic carbocyclic ring
- C08F12/02—Monomers containing only one unsaturated aliphatic radical
- C08F12/32—Monomers containing only one unsaturated aliphatic radical containing two or more rings
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F212/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by an aromatic carbocyclic ring
- C08F212/02—Monomers containing only one unsaturated aliphatic radical
- C08F212/04—Monomers containing only one unsaturated aliphatic radical containing one ring
- C08F212/14—Monomers containing only one unsaturated aliphatic radical containing one ring substituted by heteroatoms or groups containing heteroatoms
- C08F212/16—Halogens
- C08F212/20—Fluorine
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F212/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by an aromatic carbocyclic ring
- C08F212/02—Monomers containing only one unsaturated aliphatic radical
- C08F212/04—Monomers containing only one unsaturated aliphatic radical containing one ring
- C08F212/14—Monomers containing only one unsaturated aliphatic radical containing one ring substituted by heteroatoms or groups containing heteroatoms
- C08F212/22—Oxygen
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F212/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by an aromatic carbocyclic ring
- C08F212/02—Monomers containing only one unsaturated aliphatic radical
- C08F212/04—Monomers containing only one unsaturated aliphatic radical containing one ring
- C08F212/14—Monomers containing only one unsaturated aliphatic radical containing one ring substituted by heteroatoms or groups containing heteroatoms
- C08F212/22—Oxygen
- C08F212/24—Phenols or alcohols
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F22/00—Homopolymers and copolymers of compounds having one or more unsaturated aliphatic radicals each having only one carbon-to-carbon double bond, and at least one being terminated by a carboxyl radical and containing at least one other carboxyl radical in the molecule; Salts, anhydrides, esters, amides, imides or nitriles thereof
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D125/00—Coating compositions based on homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by an aromatic carbocyclic ring; Coating compositions based on derivatives of such polymers
- C09D125/18—Homopolymers or copolymers of aromatic monomers containing elements other than carbon and hydrogen
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0046—Photosensitive materials with perfluoro compounds, e.g. for dry lithography
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F212/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by an aromatic carbocyclic ring
- C08F212/02—Monomers containing only one unsaturated aliphatic radical
- C08F212/32—Monomers containing only one unsaturated aliphatic radical containing two or more rings
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
- G03F7/0382—Macromolecular compounds which are rendered insoluble or differentially wettable the macromolecular compound being present in a chemically amplified negative photoresist composition
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
- Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
- Y10S430/1055—Radiation sensitive composition or product or process of making
- Y10S430/106—Binder containing
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
- Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
- Y10S430/1055—Radiation sensitive composition or product or process of making
- Y10S430/114—Initiator containing
Abstract
Description
Claims (20)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US12/206,065 US7951525B2 (en) | 2008-09-08 | 2008-09-08 | Low outgassing photoresist compositions |
US12/206,065 | 2008-09-08 | ||
PCT/EP2009/059160 WO2010025983A1 (en) | 2008-09-08 | 2009-07-16 | Low outgassing photoresist compositions |
Publications (2)
Publication Number | Publication Date |
---|---|
CN102143981A CN102143981A (zh) | 2011-08-03 |
CN102143981B true CN102143981B (zh) | 2013-05-15 |
Family
ID=41110952
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2009801347011A Expired - Fee Related CN102143981B (zh) | 2008-09-08 | 2009-07-16 | 低释气性光刻胶组合物 |
Country Status (7)
Country | Link |
---|---|
US (1) | US7951525B2 (zh) |
EP (1) | EP2285845B1 (zh) |
JP (1) | JP5735915B2 (zh) |
KR (1) | KR101589776B1 (zh) |
CN (1) | CN102143981B (zh) |
TW (1) | TWI493290B (zh) |
WO (1) | WO2010025983A1 (zh) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8323868B2 (en) * | 2009-11-06 | 2012-12-04 | International Business Machines Corporation | Bilayer systems including a polydimethylglutarimide-based bottom layer and compositions thereof |
EP2503230A1 (en) | 2011-03-22 | 2012-09-26 | Solvay Specialty Polymers Italy S.p.A. | A led lighting device with an adjustable spatial distribution of the emitted light |
US9611410B2 (en) | 2011-12-14 | 2017-04-04 | Mitsui Chemicals Tohcello, Inc. | Adhesive resin composition, laminate, and self-stripping method |
JP6051013B2 (ja) * | 2012-10-26 | 2016-12-21 | 東京応化工業株式会社 | レジスト組成物、レジストパターン形成方法、高分子化合物、化合物 |
JP6217940B2 (ja) * | 2012-12-19 | 2017-10-25 | 日産化学工業株式会社 | 環状ジエステル基を有するシリコン含有レジスト下層膜形成組成物 |
JP6052207B2 (ja) * | 2014-03-04 | 2016-12-27 | 信越化学工業株式会社 | ポジ型レジスト材料及びこれを用いたパターン形成方法 |
CN112661741A (zh) * | 2020-12-23 | 2021-04-16 | 上海博栋化学科技有限公司 | 一种含米氏酸结构的光刻胶树脂单体及其合成方法 |
CN115403976B (zh) * | 2022-08-19 | 2023-04-18 | 嘉庚创新实验室 | 一种抗反射涂层组合物 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1605938A (zh) * | 2003-10-08 | 2005-04-13 | 海力士半导体有限公司 | 光致抗蚀剂聚合物及包含其的光致抗蚀剂组合物 |
CN101255212A (zh) * | 2007-02-28 | 2008-09-03 | 住友化学株式会社 | 二烯聚合物和制备该二烯聚合物的方法 |
Family Cites Families (28)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4189323A (en) * | 1977-04-25 | 1980-02-19 | Hoechst Aktiengesellschaft | Radiation-sensitive copying composition |
JPS5559181A (en) * | 1978-10-30 | 1980-05-02 | Mitsui Petrochem Ind Ltd | Preparation of alkenyl-malonic acid cyclic ester |
US4284706A (en) * | 1979-12-03 | 1981-08-18 | International Business Machines Corporation | Lithographic resist composition for a lift-off process |
US4442197A (en) * | 1982-01-11 | 1984-04-10 | General Electric Company | Photocurable compositions |
ATE37242T1 (de) * | 1984-02-10 | 1988-09-15 | Ciba Geigy Ag | Verfahren zur herstellung einer schutzschicht oder einer reliefabbildung. |
US4603101A (en) * | 1985-09-27 | 1986-07-29 | General Electric Company | Photoresist compositions containing t-substituted organomethyl vinylaryl ether materials |
US5403908A (en) * | 1989-10-06 | 1995-04-04 | Idemitsu Kosan Company, Limited | Aryl styrene-based copolymer |
DE4106357A1 (de) * | 1991-02-28 | 1992-09-03 | Hoechst Ag | Strahlungsempfindliche polymere mit 2-diazo-1,3-dicarbonyl-gruppen, verfahren zu deren herstellung und verwendung in einem positiv arbeitenden aufzeichnungsmaterial |
US5241007A (en) * | 1992-01-21 | 1993-08-31 | The United Statets Of America As Represented By The Secretary Of Commerce | Hydroxyfluoroalkyl-substituted styrenes and polymeric compositions containing same |
US5272232A (en) * | 1992-01-21 | 1993-12-21 | The United States Of America As Represented By The Secretary Of Commerce | Hydroxyfluoroalkyl-substituted styrenes and polymeric compositions containing same |
US5243053A (en) * | 1992-02-26 | 1993-09-07 | Eli Lilly And Company | Methylene meldrum's acid precursors |
US5344742A (en) * | 1993-04-21 | 1994-09-06 | Shipley Company Inc. | Benzyl-substituted photoactive compounds and photoresist compositions comprising same |
JP3116751B2 (ja) * | 1993-12-03 | 2000-12-11 | ジェイエスアール株式会社 | 感放射線性樹脂組成物 |
JPH07191463A (ja) * | 1993-12-27 | 1995-07-28 | Fujitsu Ltd | レジストおよびこれを使った半導体装置の製造方法 |
US5580694A (en) * | 1994-06-27 | 1996-12-03 | International Business Machines Corporation | Photoresist composition with androstane and process for its use |
US5932391A (en) * | 1995-08-18 | 1999-08-03 | Kabushiki Kaisha Toshiba | Resist for alkali development |
KR0164981B1 (ko) * | 1995-11-28 | 1999-03-20 | 김흥기 | 아세탈기를 함유하는 알콕시-스틸렌 중합체와 그의 제조방법 및 알콕시-스틸렌 중합체를 주요 구성성분으로 하는 화학증폭형 포토레지스트 재료 |
EP0780732B1 (en) * | 1995-12-21 | 2003-07-09 | Wako Pure Chemical Industries Ltd | Polymer composition and resist material |
DE69736994T2 (de) * | 1996-12-30 | 2007-07-26 | Centre National De La Recherche Scientifique (C.N.R.S.) | Ionische Malonsäuredinitril Derivate und deren Verwendung |
KR19990081722A (ko) * | 1998-04-30 | 1999-11-15 | 김영환 | 카르복실기 함유 지환족 유도체 및 그의 제조방법 |
JP3840052B2 (ja) * | 1998-08-10 | 2006-11-01 | 株式会社東芝 | レジスト用樹脂 |
JP3763693B2 (ja) * | 1998-08-10 | 2006-04-05 | 株式会社東芝 | 感光性組成物及びパターン形成方法 |
US6303266B1 (en) * | 1998-09-24 | 2001-10-16 | Kabushiki Kaisha Toshiba | Resin useful for resist, resist composition and pattern forming process using the same |
US6365321B1 (en) * | 1999-04-13 | 2002-04-02 | International Business Machines Corporation | Blends of hydroxystyrene polymers for use in chemically amplified positive resist formulations |
US6399273B1 (en) * | 1999-08-13 | 2002-06-04 | Board Of Regents, University Of Texas System | Water-processable photoresist compositions |
KR100653302B1 (ko) * | 1999-09-08 | 2006-12-04 | 신에쓰 가가꾸 고교 가부시끼가이샤 | 스티렌 유도체 |
KR20010045418A (ko) * | 1999-11-05 | 2001-06-05 | 박종섭 | 신규한 포토레지스트 단량체, 그의 중합체 및 이를함유하는 포토레지스트 조성물 |
KR101384171B1 (ko) * | 2006-09-29 | 2014-04-10 | 후지필름 가부시키가이샤 | 레지스트 조성물 및 이것을 사용한 패턴형성방법 |
-
2008
- 2008-09-08 US US12/206,065 patent/US7951525B2/en not_active Expired - Fee Related
-
2009
- 2009-07-16 KR KR1020117002152A patent/KR101589776B1/ko not_active IP Right Cessation
- 2009-07-16 WO PCT/EP2009/059160 patent/WO2010025983A1/en active Application Filing
- 2009-07-16 EP EP09780715.0A patent/EP2285845B1/en not_active Not-in-force
- 2009-07-16 JP JP2011525481A patent/JP5735915B2/ja not_active Expired - Fee Related
- 2009-07-16 CN CN2009801347011A patent/CN102143981B/zh not_active Expired - Fee Related
- 2009-09-04 TW TW098129915A patent/TWI493290B/zh not_active IP Right Cessation
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1605938A (zh) * | 2003-10-08 | 2005-04-13 | 海力士半导体有限公司 | 光致抗蚀剂聚合物及包含其的光致抗蚀剂组合物 |
CN101255212A (zh) * | 2007-02-28 | 2008-09-03 | 住友化学株式会社 | 二烯聚合物和制备该二烯聚合物的方法 |
Non-Patent Citations (4)
Title |
---|
Barry M.Trost et al.Bromomalonates as Synthetic Reagents. Transfer Alkylations.《Journal of the American Chemical Society》.1976,第98卷(第5期),p1204-1212. * |
JP昭55-59181A 1980.05.02 |
Kwun-Ngai Lau et al.Dendronized Polymer Organogels from Click Chemistry: A Remarkable Gelation Property Owing to Synergistic Functional-Group Binding and Dendritic Size Effects.《Angew.Chem.Int.Ed.》.2008,第120卷p7018-7022. * |
Takeshi Okada et al.Pd-Catalyzed Polymerization of Dienes that Involves Chain-Walking Isomerization of the Growing Polymer End:Synthesis of Polymers Composed of Polymethylene and Five-Membered-Ring Units.《Angew.Chem.Int.Ed.》.2007,第46卷p6141-6143. * |
Also Published As
Publication number | Publication date |
---|---|
WO2010025983A1 (en) | 2010-03-11 |
JP5735915B2 (ja) | 2015-06-17 |
TWI493290B (zh) | 2015-07-21 |
TW201022849A (en) | 2010-06-16 |
US20100062368A1 (en) | 2010-03-11 |
CN102143981A (zh) | 2011-08-03 |
EP2285845B1 (en) | 2013-09-04 |
KR20110065438A (ko) | 2011-06-15 |
KR101589776B1 (ko) | 2016-01-28 |
JP2012502123A (ja) | 2012-01-26 |
US7951525B2 (en) | 2011-05-31 |
EP2285845A1 (en) | 2011-02-23 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN102143981B (zh) | 低释气性光刻胶组合物 | |
EP0829766B1 (en) | Novel polymers and photoresist compositions | |
EP0942329B1 (en) | Novel process for preparing resists | |
TW565739B (en) | Resist composition suitable for short wavelength exposure and resist pattern forming method | |
JP6100261B2 (ja) | 現像可能な下層反射防止膜形成用組成物 | |
JP6005866B2 (ja) | 現像可能な下層反射防止膜 | |
JP2001194792A (ja) | フェノール/脂環式コポリマーおよびフォトレジスト | |
CN102001926A (zh) | 化合物,树脂,抗蚀剂组合物和用于制备抗蚀剂图案的方法 | |
US5780566A (en) | Polymers containing protected styrene and unprotected hydroxybenzyl (meth)acrylamides | |
EP1970367A2 (en) | Method for producing hydroxyphenyl acrylate monomers and polymers | |
TWI227377B (en) | Positive-type resist composition | |
JP2008045125A (ja) | 極紫外線及び深紫外線用感光性高分子及びこれを含むフォトレジスト組成物 | |
JP4291905B2 (ja) | 感光性ポリマー及びそれを利用した化学増幅型レジスト組成物 | |
WO1997027515A1 (fr) | Composition de resist | |
US6077643A (en) | Polymers and photoresist compositions | |
CN115536776B (zh) | 一种光刻胶用树脂及其制备方法及用该树脂制得的光刻胶 | |
JP4190834B2 (ja) | レジスト組成物 | |
KR20000052413A (ko) | 하이드록시페닐 공중합체 및 이를 함유하는 포토레지스트 | |
JP2004524565A (ja) | 新規な共重合体及びフォトレジスト組成物 | |
KR100241116B1 (ko) | 포토레지스트용 공중합체 및 그 제조방법 | |
JP2001147530A (ja) | ネガ型レジスト組成物 | |
KR0145353B1 (ko) | N-치환된 술폰일옥시말레이미드 단량체를 이용한 삼원공중합체의 제조방법 및 그를 이용한 내열성 레지스트 화상형성방법 | |
WO2011023497A1 (en) | Chemically amplified photoresist composition and process for its use | |
Havard et al. | Novel chemically amplified imaging materials containing malonate pendant groups | |
KR19980026830A (ko) | 화학증폭형 레지스트 조성물 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
TR01 | Transfer of patent right | ||
TR01 | Transfer of patent right |
Effective date of registration: 20171025 Address after: Grand Cayman, Cayman Islands Patentee after: GLOBALFOUNDRIES INC. Address before: American New York Patentee before: Core USA second LLC Effective date of registration: 20171025 Address after: American New York Patentee after: Core USA second LLC Address before: American New York Patentee before: International Business Machines Corp. |
|
CF01 | Termination of patent right due to non-payment of annual fee | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20130515 Termination date: 20190716 |