CN102121091B - Cool-down system and method for a vapor deposition system - Google Patents
Cool-down system and method for a vapor deposition system Download PDFInfo
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- CN102121091B CN102121091B CN201110008156.0A CN201110008156A CN102121091B CN 102121091 B CN102121091 B CN 102121091B CN 201110008156 A CN201110008156 A CN 201110008156A CN 102121091 B CN102121091 B CN 102121091B
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- 238000000034 method Methods 0.000 title claims abstract description 32
- 238000007740 vapor deposition Methods 0.000 title claims abstract description 19
- 239000000758 substrate Substances 0.000 claims abstract description 46
- 239000000112 cooling gas Substances 0.000 claims abstract description 22
- 239000010409 thin film Substances 0.000 claims abstract description 11
- 238000005019 vapor deposition process Methods 0.000 claims abstract description 4
- 238000001816 cooling Methods 0.000 claims description 113
- 239000007789 gas Substances 0.000 claims description 29
- 238000001556 precipitation Methods 0.000 claims description 23
- 239000000463 material Substances 0.000 claims description 18
- 230000008021 deposition Effects 0.000 claims description 10
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 6
- 239000001301 oxygen Substances 0.000 claims description 6
- 229910052760 oxygen Inorganic materials 0.000 claims description 6
- 239000012530 fluid Substances 0.000 claims description 5
- 230000005622 photoelectricity Effects 0.000 claims description 5
- 238000011144 upstream manufacturing Methods 0.000 claims description 2
- MARUHZGHZWCEQU-UHFFFAOYSA-N 5-phenyl-2h-tetrazole Chemical compound C1=CC=CC=C1C1=NNN=N1 MARUHZGHZWCEQU-UHFFFAOYSA-N 0.000 description 10
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 10
- 238000010438 heat treatment Methods 0.000 description 8
- 238000000151 deposition Methods 0.000 description 7
- 239000002826 coolant Substances 0.000 description 6
- 230000008569 process Effects 0.000 description 6
- 238000011068 loading method Methods 0.000 description 5
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- 230000008901 benefit Effects 0.000 description 4
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- 230000008859 change Effects 0.000 description 3
- 238000004891 communication Methods 0.000 description 3
- 230000006870 function Effects 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- 238000010791 quenching Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 238000012546 transfer Methods 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 230000000740 bleeding effect Effects 0.000 description 2
- 238000010276 construction Methods 0.000 description 2
- 238000004821 distillation Methods 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 238000005219 brazing Methods 0.000 description 1
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- 238000005245 sintering Methods 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 238000000859 sublimation Methods 0.000 description 1
- 230000008022 sublimation Effects 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/0296—Inorganic materials including, apart from doping material or other impurities, only AIIBVI compounds, e.g. CdS, ZnS, HgCdTe
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/54—Controlling or regulating the coating process
- C23C14/541—Heating or cooling of the substrates
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1828—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIBVI compounds, e.g. CdS, ZnS, CdTe
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1828—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIBVI compounds, e.g. CdS, ZnS, CdTe
- H01L31/1836—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIBVI compounds, e.g. CdS, ZnS, CdTe comprising a growth substrate not being an AIIBVI compound
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02551—Group 12/16 materials
- H01L21/02562—Tellurides
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/543—Solar cells from Group II-VI materials
Abstract
The invention relates to a cool-down system and method for a vapor deposition system. A system 10 for vapor deposition of a thin film layer on photovoltaic (PV) module substrates 14 includes a system 100 for cool-down of the vacuum chamber 12 through which substrates are conveyed in a vapor deposition process. The cool-down system is configured with the vacuum chamber 12 to recirculate a cooling gas through the vacuum chamber 12 and through an external heat exchanger 108 in a closed cool-down loop. An associated method for forced cool-down of the vacuum chamber is also provided.
Description
Technical field
Theme disclosed herein relates generally to the field for the thin film layer of such as semiconductor layer being deposited on the gas-phase precipitation system on substrate.More specifically, this theme relates to for cooling gas-phase precipitation system fast to carry out safeguarding or the system and method for other program.
Background technology
As the complementary or main electric power source in industry and house application, solar energy system gains wide acceptance.The efficiency of film photoelectric (PV) module used in solar energy system is reaching so a kind of level: wherein, every watt produce power cost in, large-scale production becomes feasible economically.For the PV module based on cadmium telluride (CdTe) especially like this.CdTe has the semiconductor material being particularly suited for characteristic solar energy converting being become electricity.Such as, CdTe has the band gap of 1.45eV, this make its with in history for the more low band gaps (1.2eV) in solar cell application semiconductor material compared with can change more energy from solar spectrum.And compared with more low band gaps material, CdTe at switching energy under lower or diffuse light conditions, and therefore compared with other traditional material, can have longer effective switching time in the time by day or under low light (such as cloudy) condition.
But although CdTe has advantage, the continuable business development of sun power and accepting is depended in a cost efficient manner, in the mode of scale operation to produce the ability of efficient PV module.In this, the ability of processing the substrate of relatively large surface-area with minimum interruption in gas-phase precipitation system is critical consideration.
All gas-phase precipitation systems, such as CSS (closed system distillation) system, inevitably need to shut down to carry out the maintenance, repair planned and other program.But, before any this program of execution, system must be cooled down from high operating temperature (more than 500 DEG C) and low-down pressure (millitorr scope).Such as, before any graphite component is in systems in which exposed to oxygen, with controlled speed, temperature must be reduced to lower than about 400 DEG C, otherwise such component may burn.
Cool traditional gas-phase precipitation system and typically comprise vacuum chamber part backfilled with inert gas to system, such as nitrogen.This gas provides transmission medium, and allows this system to be cooled by simple convection current.The shortcoming of this process is that it will spend very long time cooling system component.Typically spend be cooled to traditional system to be suitable for from operating temperature and pressure the temperature of manual operated member the stop time of about 4 hours.At this time durations, system does not produce PV module, and therefore can directly owing to can greatly increase total production cost the stop time of process of cooling.
Vacuum oven is widely used by material (typically in metal production industry, metal) be heated to very high temperature (1100 DEG C to 1500 DEG C), to carry out such as brazing, sintering and heat treated process with good consistence and low pollution.Reference example is as the vacuum oven produced by the G-M Enterprises of California, USA Ke Luona.Vacuum oven typically uses quench system quick cool metal workpiece after the process completing expectation.Quench system makes pressurized inert gas (typically, argon gas) carry out recirculation by heat exchanger, and be recycled to the nozzle of orientation towards workpiece in stove, until reach the workpiece temperature of expectation, at this moment, workpiece is removed from stove.Reference example as U.S. Patent No. 5,267,257.But quench system is not suitable for the whole gas-phase precipitation system of cooling.
Therefore, in PV module industry, just exist for being used for the demand of system and method for the improvement cooling gas-phase precipitation system efficiently.
Summary of the invention
Partly will set forth each aspect of the present invention and advantage in the following description, or according to this description, each aspect of the present invention and advantage can be apparent, or by putting into practice the present invention to learn each aspect of the present invention and advantage.
According to one embodiment of present invention, provide a kind of for by thin film layer vapor deposition to the system in photoelectricity (PV) module substrate.This system comprises vacuum chamber, and in vapor deposition process, substrate is transmitted through vacuum chamber, and wherein, source material is sublimated and is deposited on the surface of substrate.In order to carry out other program safeguarding or need to make gas-phase precipitation system shut down, cooling system constructs about vacuum chamber, to make cooling gas pass through external heat exchanger recirculated through described vacuum chamber in closed cooling loop.Cooling gas removes heat from vacuum chamber, and transferring heat in a heat exchanger.
In a particular embodiment, cooling system is included in first position and is connected to inlet duct on vacuum chamber.The second position that supply line is separating with first location is connected on vacuum chamber.Provide exterior cooling room, inlet duct and supply line are connected on cooling room.Heat exchanger and blower setting are in cooling room.Rare gas element supply is configured to be introduced in the cooling system of loop line by cooling gas.In the operation of cooling system, cooling gas is pumped by vacuum chamber in closed cooling loop, cooled in cooling room, and is recycled and passes through vacuum chamber.
The variants and modifications of the embodiment of the gas-phase precipitation system discussed above in scope and spirit of the present invention, and can be described further it herein.
In yet another embodiment of the present invention, provide a kind of method for cooling the vacuum chamber in gas-phase precipitation system, in a vacuum chamber, the thin film layer of source material is deposited in photoelectricity (PV) module substrate.Gas-phase precipitation system has cooling system, and cooling system is configured to be in fluid with vacuum chamber and is communicated with.The method comprises makes cooling system and vacuum chamber keep apart, and bleeds to segregate cooling system, with from wherein removing oxygen.Then isolation is cancelled to this system, and this system specialization comprises the closed cooling loop of vacuum chamber.Rare gas element is introduced in cooling loop, and is recycled by the vacuum chamber in cooling loop and heat exchanger, so that cooling vacuum room.
The variants and modifications of the embodiment of the method for cooling discussed above in scope and spirit of the present invention, and can be described further it herein.
Accompanying drawing explanation
Set forth complete and disclosing of can implementing of the present invention have references in the description of the drawings book, comprise its optimal mode, in the accompanying drawings:
Fig. 1 is can in conjunction with the orthographic plan of the gas-phase precipitation system of the embodiment of cooling system of the present invention and method;
Fig. 2 is according to each aspect of the present invention, sketch for an embodiment of the cooling system of gaseous deposition chamber; And,
Fig. 3 is the orthographic plan of the system of Fig. 1 of an embodiment of the cooling system combined according to each aspect of the present invention.
List of parts
10 systems
12 vacuum chambers
14 substrates
16 heater modules
18 well heaters
20 refrigerating modules
22 post-heating modules
24 plenum systems
26 load conveyors
28 loading modules
30 buffer modules
32 black vacuum pumps
34 valves
36 actuating mechanisms
38 smart vacuum pumps
40 vacuum pumps
42 exit buffer module
44 exit locking module
46 exit forwarder
48 forwarders
50 controllers
52 central controllers
54 sensors
60 gaseous deposition chamber
100 cooling systems
102 inlet ducts
104 supply lines
105 alternative supply lines
106 cooling rooms
108 heat exchangers
110 fans
112 rare gas element supplies
113 supply connection
114 heat-eliminating medium sources
115 supply connection
116 purge circuit
118 segregaion valves
218 segregaion valves
318 segregaion valves
418 segregaion valves
518 segregaion valves
120 vacuum pumps
122 cooling jackets
124 cooling jacket sources
Embodiment
To carry out detailed reference to embodiments of the invention now, one or more examples of embodiment illustrate in the drawings.To set forth the present invention, unrestricted mode of the present invention provides each example.In fact, will it will be apparent for a person skilled in the art that and can make various amendment and change in the present invention and not depart from scope of the present invention or spirit.Such as, the feature of the part being illustrated as or being described as an embodiment can use together with another embodiment, to produce another other embodiment.Therefore, it is intended that the present invention is included in this amendment in the scope of appended claims and equivalent thereof and change.
Fig. 1 shows can in conjunction with an embodiment of the gas-phase precipitation system 10 of the gaseous deposition chamber's cooling apparatus (Fig. 2 and 3) according to each aspect of the present invention.System 10 is configured to be deposited on by thin film layer in photoelectricity (PV) module substrate 14 (hereinafter referred to as " substrate ").Film such as can be cadmium telluride (CdTe) rete.As mentioned, general accreditation in the prior art is that " thin " rete in PV module substrate is less than about 10 microns (μm) substantially.Should be appreciated that this cooling system and process are not limited to use in the system 10 shown in Fig. 1, but can be attached to and be configured to so that by thin film layer vapor deposition in any suitable processing line in PV module substrate 14.
Wherein can use the environment of this cooling system and process with understanding in order to reference, below the system 10 of Fig. 1 being described, after be the detailed description of cooling system and methods involving.
With reference to Fig. 1, example system 10 comprises vacuum chamber 12, and In a particular embodiment, vacuum chamber 12 can be limited by multiple interconnecting modules.Such as, multiple interconnection heater module 16 limits the preheating section of vacuum chamber 12, and before being sent in vapor deposition device 60 (it also can be module), substrate 14 is transmitted through this preheating section and is heated to the temperature of expectation.Each warm-up block 16 comprises the heater unit 18 of the independence control for its structure.
Vacuum chamber 12 also in this vacuum chamber 12, the downstream of vapor deposition device 60 comprises multiple interconnection refrigerating module 20.Refrigerating module 20 limits cooling section in vacuum chamber 12, in this cooling section, before remove substrate 14 from system 10, has the substrate 14 of deposit sublimation source material film thereon with the cooling of controlled rate of cooling.Modules 20 can comprise pressure cooling system, and wherein, the such as heat-eliminating medium of water coolant, cooling agent or other medium is pumped through the spiral coil cooling tube into module 20 constructs.
In the illustrated embodiment of system 10, before the positive downstream that at least one post-heating module 22 is positioned at vapor deposition device 60 and refrigerating module 20.When the front section of substrate 14 is transferred out vapor deposition device 60, this front section moves in post-heating module 22, and post-heating module 22 makes the temperature of substrate 14 remain on the temperature place substantially identical with the remainder of the substrate 14 in vapor deposition device 60.Like this, just the front section of substrate 14 is not allowed to cool when the rear section of substrate 14 is still in vapor deposition device 60.If allow the front section of substrate 14 to cool when it exits equipment 60, then longitudinally produce uneven temperature by along substrate 14.This situation can cause the uneven deposit of thin film layer, or causes defect in layer.
As illustrated in diagrammatic mode in Fig. 1, for vapor deposition device 60 constructs feedway 24, to supply source material, such as granular CdTe.Preferably, feedway 24 is configured to so that source of supply material, and the vapor deposition process continued not in interrupting device 60 or substrate 14 are by the transmission of equipment 60.
Still with reference to Fig. 1, originally independent substrate 14 is placed on load conveyor 26, and substrate 14 is moved to enter on vacuum locking station subsequently, enter vacuum locking station and comprise loading module 28 and buffer module 30.For loading module 28 constructs " slightly " (initial) vacuum pump 32, to take out initial vacuum, and construct " essence " (high) vacuum pump 38 for buffer module 30, basic for the vacuum in vacuum chamber 12 to make the vacuum in buffer module 30 increase to.Valve 34 (such as gate slit valve or rotary-type clack valve) is operationally arranged between load conveyor 26 and loading module 28, between loading module 28 and buffer module 30, and between buffer module 30 and vacuum chamber 12.These valves 34 are actuated by the actuating mechanism 36 of motor or other type in order, to be introduced in vacuum chamber 12 by substrate 14 in stepwise fashion, and do not affect the vacuum in room 12.
Exit vacuum locking station and be configured in the downstream of last refrigerating module 20, and lock station run substantially on the contrary with the above-mentioned vacuum that enters.Such as, exit vacuum locking station can comprise and exit buffer module 42 and locking module 44 is exited in downstream.The guiding valve 34 operated in order is arranged between buffer module 42 and last refrigerating module 20, at buffer module 42 with exit between locking module 44, and is exiting locking module 44 and is exiting between forwarder 46.Construct smart vacuum pump 38 for exiting buffer module 42, and construct black vacuum pump 32 for exiting locking module 44.Pump 32,38 and valve 34 operate in order, in stepwise fashion substrate 14 is shifted out vacuum chamber 12, and do not lose the vacuum condition in vacuum chamber 12.
System 10 also comprises and being configured to substrate 14 is moved into, move past and to be shifted out the transmitter system of vacuum chamber 12.In the embodiment shown, this transmitter system comprises multiple forwarder 48 controlled individually, and each in disparate modules comprises one in forwarder 48.Should be appreciated that type or the structure of forwarder 48 can be different.In the embodiment shown, forwarder 48 is that have can by the roll shaft forwarder of roll shaft driven rotatably, and it is controlled, to realize the transfer rate of substrate 14 by the expectation of corresponding module and whole system 10.
As described, each and corresponding forwarder in the disparate modules individually in Controlling System 10 perform specific function.For this control, each independent module can have the independently controller 50 be associated for its structure, to control the independent function of corresponding module.Multiple controller 50 again can with central system controller 52 communication, as shown in Figure 1.Central system controller 52 can the function of monitor and forecast (by independently controller 50) any one module, so that when processing the substrate 14 by system 10, realize the heating rate, deposition rate, rate of cooling, transfer rate etc. of overall expectation.
With reference to Fig. 1, in order to control independent corresponding forwarder 48 independently, modules can comprise any type of active or passive sensor 54, when substrate 14 is transmitted through module, and the existence of sensor 54 probing substrate 14.Sensor 54 and corresponding module controller 50 communication, module controller 50 again with central controller 52 communication.Like this, just can control independent corresponding forwarder 48, to guarantee to keep the appropriate spacing between substrate 14, and guarantee that substrate 14 is transmitted through vacuum chamber 12 with the constant transfer rate expected.
Vapor deposition device 60 can adopt various structure in scope and spirit of the present invention and principle of operation, and be generally configured in case using the source material (such as CdTe) of distillation as film vapor deposition in PV module substrate 14.In the embodiment of the system 10 shown in Fig. 1, equipment 60 is independently modules, and can run according to any traditional deposition process.In a particular embodiment, equipment 60 can comprise and being arranged in head room to receive the container of the granular source material from plenum system 24.This container be heated to for make source material distil for effective temperature, source material flow container and be downward through allocation member, and being deposited on the upper surface of substrate 14 of the equipment of being transmitted through 60 as thin film layer.
Fig. 2 is the sketch of an embodiment of the cooling system 100 combining each aspect of the present invention.System 100 constructs about vacuum chamber 12 (Fig. 1), and substrate 14 is transported through this vacuum chamber 12 by forwarder 48.As mentioned above, vapor deposition device 60 (Fig. 1) makes source material distil, and this material is deposited on the upper surface of substrate 14 with the form of thin film layer.Sometimes, will be necessary that and gas-phase precipitation system is shut down, to be able to close to vacuum chamber 12.Cooling system 100 is run, so as by make heat-eliminating medium (such as rare gas element (such as nitrogen)) in closed cooling loop recirculated through at least one section of vacuum chamber 12 and by external heat exchanger 108 with controlled and efficient manner cooling vacuum room 12.In a specific embodiment shown in the figure, loop line is limited by this circulating path: this circulating path is by vapor deposition device-wherein, cooling gas removes heat from this equipment, and by heat exchanger 108-wherein, heat is removed from cooling gas, and this heat is delivered to heat-eliminating medium 114, such as water coolant, cooling agent, gas etc.
In a specific embodiment of cooling system 100, inlet duct 102 is connected on vacuum chamber 12 in first position.Only for purposes of illustration, in fig. 2 vacuum chamber 12 is depicted as the single component comprising vapor deposition device.Should be appreciated that vacuum chamber 12 can comprise multiple components of any structure, as shown in figs. 1 and 3.The second position that supply line 104 is separating with first location is connected on vacuum chamber 12.Select first location and the second position, to set up the cooling flow path by vacuum chamber 12, such as, from the other end of one end to this room 12 of room 12.
Provide exterior cooling room 106, wherein inlet duct 102 and supply line 104 are connected on room 106.Room 106 substantially limits the wind box closed, and heat exchanger 108 and fan or fan 110 are arranged in this wind box.Cooling gas through heating is transported to the internal space of room 106 from vacuum chamber 12 by inlet duct 102, wherein, cooled through the gas stream over-heat-exchanger 108 of heating.Fan 110 is for pumping out by cooling gas from vacuum chamber 12 and being pumped by this cooling gas by heat exchanger 108 and be used for making the gas of cooling to be circulated back to the prime mover of vacuum chamber 12 by supply line 104.
Rare gas element (such as nitrogen) is fed to the loop line of cooling system 100 from any suitable source 112.Can in various position by this gas introducing system.For example, referring to Fig. 2, by suitable segregaion valve 118, this gas is directly fed in cooling room 106 via circuit 113.In a kind of constructive alternative shown in Fig. 2, by supply connection 115 and suitable segregaion valve 218, inertia cooling gas is introduced in vacuum deposition chamber 112.
Still with reference to Fig. 2, in inlet duct 102 and supply line 104, segregaion valve 318,418 is provided.Should be appreciated that under the normal running (operation) conditions of vacuum chamber 12, by these segregaion valves, cooling system 100 and room 12 are kept apart.When making vacuum chamber 12 shut down to cool, by opening segregaion valve 318,418, cooling system 100 is run.At this point place, pipeline 102,104 and cooling room 106 are in the vacuum pressure place identical with room 12.Introducing cooling gas (such as nitrogen) will make closed cooling loop be pressurized to a certain degree (such as until be no more than the pressure of about 1 bar).Thus, fan 110 should be suitable for running in relatively low pressure or vacuum environment.
By segregaion valve 518 for cooling room 106 constructs vacuum pump 120.Vacuum pump 120 can be and is only used for bleeding to remove the dedicated pump of any oxygen from system to room 106 and pipeline 102,104 before making system 100 operation.As discussed above, oxygen should not be introduced in vacuum chamber 12 higher than the temperature place of 400 DEG C, to prevent room component burning in (vacuum) room.In an alternative embodiment, vacuum pump 120 also can be used as one in black vacuum pump or smart vacuum pump, black vacuum pump or smart vacuum pump are used for aspirating and keep the pressure in vacuum chamber 12 under normal operating conditions in gas-phase precipitation system 10, or be used for operation enter or exit vacuum locking station (as above about Fig. 1 discuss).
Referring again to Fig. 2, should be appreciated that and to remove from vacuum chamber 12 and the hot gas being conducted through inlet duct 102 will be very hot, and thus, inlet duct 102 is supplied to force cooling can be necessary.Fig. 2 is shown schematically in the cooling jacket 122 into pipeline 102 constructs.Exterior cooling medium 124 can be supplied, such as water coolant etc. to cooling jacket 122.Should be appreciated that other method is applicable to cooling duct 102, such as forced ventilation system etc.
Fig. 3 shows a unique embodiment, wherein, for the gas-phase precipitation system 10 shown in Fig. 1 constructs cooling system 100.As above about Fig. 1 discuss, vacuum chamber 12 can comprise gaseous deposition chamber 60, be arranged on multiple warm-up block 16 of the upstream of gaseous deposition chamber 60, and is arranged on multiple refrigerating modules 20 in the downstream of gaseous deposition chamber 60 along the delivery direction of substrate 14.Supply line 104 can be connected in warm-up block 16, and inlet duct 102 can be connected in refrigerating module 20 on one.In the embodiment shown, supply line 104 can be switched in the pipe support (duct work) be associated with smart vacuum pump 40.In an alternative embodiment, supply line 104 is directly switched in module 16 by dedicated line 105.As mentioned above, in pipeline 104, suitable segregaion valve 418 is provided.
In the embodiments of figure 3, closed cooling loop is limited by the multiple module between supply line 104 and inlet duct 102 and cooling room 106 thus.Therefore, before taking out recirculation cooling gas by inlet duct 102, recirculation cooling gas is transmitted through multiple module, comprises vapor deposition room module 60.Gas through heating cools in heat exchanger 106, and the heat medium 114 that is cooled removes.Fan 110 provides the prime mover for making cooling gas recirculation.
In the embodiments of figure 3, cooling gas is directly fed in cooling room 106 by supply connection 113 by rare gas element supply 112.In this embodiment, the vacuum pump 120 being used for bleeding to room 106 and pipeline 102,104 is black vacuum pumps, this black vacuum pump also above discuss about Fig. 1 exit in steam locking system and use.During the normal running (operation) conditions of vacuum chamber 12, by suitable segregaion valve 518, black vacuum pump and cooling system 100 are kept apart.
Should be appreciated that the rate of cooling utilizing system 100 to realize depends on multiple variable, flow rate of the volume of such as vacuum chamber 12, the size of cooling room 106 and efficiency, heat-eliminating medium etc.From the initial launch temperature of about 500 in vacuum chamber 12 degree Celsius, the desirable rate of cooling for the system construction of Fig. 3 is little between about 500,000BTU/ hours between about 200,000BTU/.In a particular embodiment, cooling room 106 has the design quota of about 500,000BTU/ hours, and room 12 was cooled to about 300 degrees Celsius before being exposed to atmospheric condition, burnt to prevent internals.
The present invention also comprises the various methods for cooling the vacuum chamber in gas-phase precipitation system.These methods can be put into practice herein with the system embodiment of above discussion or above other suitable system construction may not described or may not describe.An embodiment of proper method needs the vacuum chamber part making cooling system and gas-phase precipitation system to keep apart.First emptying cooling system, therefrom to remove oxygen.Then isolation is cancelled to system, and make system and vacuum chamber be in fluid to be thus communicated with, to limit the closed cooling loop comprising vacuum chamber.The rare gas element of such as nitrogen is introduced in cooling loop.Then make this gas re-circulation by being configured to vacuum chamber and the heat exchanger of row in cooling loop.Make gas re-circulation can remove heat from vacuum chamber, from cooling loop, remove heat by heat exchanger.
Embodiment of the method can comprise further and cooling system is pressurized to rare gas element the pressure being less than about 1 bar.
In another embodiment, the method can comprise and utilizes vacuum pump or be also used in gas-phase precipitation system, vacuumize or keep the vacuum pump of vacuum to bleed to cooling system.
In any suitable position, rare gas element can be introduced in vacuum chamber.Such as, in one embodiment, the method comprise component-such as cooling room of rare gas element being introduced cooling system-in.In an alternative embodiment, rare gas element can be introduced in vacuum chamber.
The open the present invention of this written description use-case, comprises optimal mode, and enables any person skilled in the art put into practice the present invention, comprise and manufacture and use any device or system, and perform the method for any combination.Of the present inventionly the scope of granted patent can be defined by the claims, and other example that those skilled in the art expect can be comprised.If other such example comprises the structural element of the literal language not differing from claims, if or they comprise and the equivalent structure element of the literal language of claims without substantial differences, then such other example intention is within the scope of claims.
Claims (10)
1. one kind for by the system (10) of thin film layer vapor deposition in photoelectricity (PV) module substrate (14), comprising:
Vacuum chamber (12), in vapor deposition process, substrate is transmitted through this vacuum chamber (12), and wherein, source material is sublimated and is deposited on the surface of described substrate (14); And
Cooling system (100), it comprises:
The inlet duct (102) be communicated with described vacuum chamber (12) is connected in first position;
The supply line (104) be communicated with described vacuum chamber (12) is being connected into the second position that described first location separates;
At the heat exchanger (108) that described vacuum chamber (12) is outside; And
Fan (110), it is configured to make cooling gas in closed cooling loop recirculated through described vacuum chamber and described cooling system;
Wherein, described cooling gas in closed cooling loop from described vacuum chamber (12) pumped by described inlet duct (102), through described heat exchanger (108) to cool described cooling gas and to be back to described vacuum chamber (12) by described supply line (104) recirculation.
2. system according to claim 1 (10), is characterized in that, described cooling system (100) comprises further:
Cooling room (106), described inlet duct and described supply line are connected on described cooling room; Described heat exchanger (108) and described fan (110) are arranged in described cooling room;
Be configured to cooling gas to be introduced the rare gas element supply (112) in described closed cooling loop;
Wherein, described cooling gas is pumped by described vacuum chamber in closed cooling loop, cooled in described cooling room, and is recycled and by described vacuum chamber.
3. system according to claim 2 (10), it is characterized in that, described cooling system (100) comprises segregaion valve (118) at described inlet duct and supply line further, keeps apart to make described cooling room (106) and described vacuum chamber (12).
4. the system (10) according to Claims 2 or 3, it is characterized in that, described rare gas element supply (112) is arranged to be introduced by rare gas element in described vacuum chamber (12) or described cooling room (106).
5. the system (10) according to any one in claims 1 to 3, it is characterized in that, described vacuum chamber (12) comprises gaseous deposition chamber (60), along the multiple warm-up block (16) of delivery direction in the upstream of described gaseous deposition chamber of described substrate, and along the multiple refrigerating modules (20) of delivery direction in the downstream of described gaseous deposition chamber of described substrate, described cooling system (100) comprises the supply line (104) on that is connected in described warm-up block, and the inlet duct (102) on that is connected in described refrigerating module.
6. one kind for cooling the method for the vacuum chamber (12) in gas-phase precipitation system (10), in described vacuum chamber (12), the thin film layer of source material is deposited in photoelectricity (PV) module substrate (14), described gas-phase precipitation system has the cooling system (100) being configured to be in described vacuum chamber fluid and being communicated with, and described cooling system (100) comprising: connect into the inlet duct (102) be communicated with described vacuum chamber (12) in first position; The supply line (104) be communicated with described vacuum chamber (12) is being connected into the second position that described first location separates; At the heat exchanger (108) that described vacuum chamber (12) is outside; And fan (110), it is configured to make cooling gas in closed cooling loop recirculated through described vacuum chamber and described cooling system;
Described method comprises:
Described cooling system and described vacuum chamber are kept apart;
Segregate cooling system is bled, with from wherein removing oxygen;
Described cooling system is arranged get back to and be in fluid with described vacuum chamber and be communicated with, to limit the closed cooling loop comprising described vacuum chamber;
Rare gas element is introduced in described closed cooling loop; And,
Make described rare gas element recirculated through described vacuum chamber and heat exchanger (108) in closed cooling loop, to cool described vacuum chamber.
7. method according to claim 6, is characterized in that, utilizes the vacuum pump (32,40,120) being also used for vacuumizing in described gas-phase precipitation system (10) to bleed to described cooling system (100).
8. the method according to claim 6 or 7, is characterized in that, described rare gas element is introduced in described vacuum chamber (12) or is introduced in described cooling system (100).
9. the method according to claim 6 or 7, is characterized in that, achieves the rate of cooling of about 300,000BTU/ hours of described vacuum chamber (12).
10. the method according to claim 6 or 7, it is characterized in that, described rare gas element is recycled by being configured to be in described vacuum chamber (12) inlet duct (102) and supply line (104) that fluid is communicated with, and described method comprises further from inlet duct described in exterior cooling.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US12/683,807 US8430963B2 (en) | 2010-01-07 | 2010-01-07 | Cool-down system and method for a vapor deposition system |
| US12/683807 | 2010-01-07 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102121091A CN102121091A (en) | 2011-07-13 |
| CN102121091B true CN102121091B (en) | 2015-04-15 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201110008156.0A Expired - Fee Related CN102121091B (en) | 2010-01-07 | 2011-01-07 | Cool-down system and method for a vapor deposition system |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US8430963B2 (en) |
| CN (1) | CN102121091B (en) |
| DE (1) | DE102010061633A1 (en) |
| MY (1) | MY157866A (en) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8950470B2 (en) * | 2010-12-30 | 2015-02-10 | Poole Ventura, Inc. | Thermal diffusion chamber control device and method |
| CN104404449A (en) * | 2014-12-05 | 2015-03-11 | 大连维钛克科技股份有限公司 | Quick cooling system of vacuum chamber of vacuum coating device |
| CN107475684A (en) * | 2017-10-11 | 2017-12-15 | 广东腾胜真空技术工程有限公司 | A kind of magnetic material filming equipment |
| CN109161867B (en) * | 2018-10-11 | 2023-08-08 | 中国科学技术大学 | Separable vacuum interconnection system |
| US11746059B2 (en) * | 2020-02-26 | 2023-09-05 | General Electric Companhy | Induction melt infiltration processing of ceramic matrix composite components |
| CN113667957B (en) * | 2021-08-20 | 2024-03-26 | 京东方科技集团股份有限公司 | Conveying unit and process equipment of display panel |
| CN114703466B (en) * | 2022-02-07 | 2024-04-09 | 常州第六元素半导体有限公司 | Continuous CVD film manufacturing apparatus and method |
| CN116768644B (en) * | 2023-06-21 | 2024-04-12 | 江苏米格新材料股份有限公司 | Automatic production method for continuous vapor deposition |
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| US3366163A (en) * | 1964-05-19 | 1968-01-30 | Salem Brosius Inc | Industrial furnace cooling system |
| DE3307071C2 (en) * | 1983-03-01 | 1986-05-22 | Joachim Dr.-Ing. 7250 Leonberg Wünning | Continuous furnace for the heat treatment of metallic workpieces |
| US5267257A (en) * | 1991-08-14 | 1993-11-30 | Grier-Jhawar-Mercer, Inc. | Vacuum furnace with convection heating and cooling |
| US5248349A (en) * | 1992-05-12 | 1993-09-28 | Solar Cells, Inc. | Process for making photovoltaic devices and resultant product |
| US5712187A (en) * | 1995-11-09 | 1998-01-27 | Midwest Research Institute | Variable temperature semiconductor film deposition |
| US6037241A (en) * | 1998-02-19 | 2000-03-14 | First Solar, Llc | Apparatus and method for depositing a semiconductor material |
| US6533991B1 (en) * | 2000-06-20 | 2003-03-18 | Ipsen International, Inc. | Cooling gas injection nozzle for a vacuum heat treating furnace |
| US6719848B2 (en) * | 2001-08-16 | 2004-04-13 | First Solar, Llc | Chemical vapor deposition system |
| WO2004079805A1 (en) * | 2003-03-07 | 2004-09-16 | Tokyo Electron Limited | Substrate-processing apparatus and temperature-regulating apparatus |
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2010
- 2010-01-07 US US12/683,807 patent/US8430963B2/en not_active Expired - Fee Related
- 2010-12-30 MY MYPI2010006314A patent/MY157866A/en unknown
- 2010-12-30 DE DE102010061633A patent/DE102010061633A1/en not_active Withdrawn
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2011
- 2011-01-07 CN CN201110008156.0A patent/CN102121091B/en not_active Expired - Fee Related
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5616264A (en) * | 1993-06-15 | 1997-04-01 | Tokyo Electron Limited | Method and apparatus for controlling temperature in rapid heat treatment system |
| CN1195036A (en) * | 1996-07-26 | 1998-10-07 | Memc电子材料有限公司 | Cooling system and method for epitaxial barrel reactor |
| US6423565B1 (en) * | 2000-05-30 | 2002-07-23 | Kurt L. Barth | Apparatus and processes for the massproduction of photovotaic modules |
Also Published As
| Publication number | Publication date |
|---|---|
| DE102010061633A1 (en) | 2011-07-14 |
| US20110165325A1 (en) | 2011-07-07 |
| CN102121091A (en) | 2011-07-13 |
| US8430963B2 (en) | 2013-04-30 |
| MY157866A (en) | 2016-07-29 |
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