CN102064150A - Lead frame - Google Patents
Lead frame Download PDFInfo
- Publication number
- CN102064150A CN102064150A CN2010105313235A CN201010531323A CN102064150A CN 102064150 A CN102064150 A CN 102064150A CN 2010105313235 A CN2010105313235 A CN 2010105313235A CN 201010531323 A CN201010531323 A CN 201010531323A CN 102064150 A CN102064150 A CN 102064150A
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- CN
- China
- Prior art keywords
- pipe core
- core welding
- welding disc
- lead
- lead frame
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/8538—Bonding interfaces outside the semiconductor or solid-state body
- H01L2224/85399—Material
- H01L2224/854—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/85438—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/85439—Silver (Ag) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/8538—Bonding interfaces outside the semiconductor or solid-state body
- H01L2224/85399—Material
- H01L2224/854—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/85438—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/85444—Gold (Au) as principal constituent
Abstract
Provided is a lead frame. The lead frame of the invention comprises a die pad on which a semiconductor chip is installed, and multiple lead wires which are arranged at the periphery of the die pad and are electrically connected to the semiconductor chip installed on the die pad. Bonding islands are provided for bonding of wires on the die pad.
Description
The cross reference of related application
The application requires the priority of on November 18th, 2009 at the korean patent application No.10-2009-0111365 of Korea S Department of Intellectual Property submission, and its content is incorporated into by reference at this.
Technical field
The present invention relates to a kind of lead frame, and more specifically, relate to and a kind ofly increase bond strength between lead frame and the moulding compound to improve the lead frame of reliability.
Background technology
Usually, a plurality of semiconductor chips are included in the single semiconductor packages, rather than are used individually.
In order to make the single semiconductor packages that comprises a plurality of semiconductor chips, use lead frame.
Particularly, a plurality of semiconductor chips are installed on the pipe core welding disc of lead frame.Be installed in semiconductor chip on the pipe core welding disc and electrically be connected to the lead-in wire of lead frame by silk thread.After the installation of semiconductor chip and thread bonded are finished, carry out moulding technology, thereby make semiconductor packages.Here, the lead-in wire that electrically is connected to semiconductor chip is exposed on the outside of semiconductor packages and is connected to external circuit.
Yet, when the bond strength between lead frame during moulding technology and the moulding compound is more weak, between lead frame and moulding compound, can form undesired gap at the interface, and the moisture-sensitive level (MSL) of semiconductor packages reduces.
In the prior art, in order to carry out the thread bonded of semiconductor chip, the edge that the pipe core welding disc of semiconductor chip is installed on it forms silver-plated (Ag) surface.
Yet silver coating is not firmly adhered to moulding compound.When as prior art when the entire circumference of pipe core welding disc forms silver coating, above-mentioned integrity problem may appear.
Summary of the invention
Aspect of the present invention provides a kind of lead frame, and the area of the coating that this lead frame forms by the thread bonded that is reduced on the pipe core welding disc increases bond strength between moulding compound and the lead frame to improve reliability.
According to aspects of the present invention, provide a kind of lead frame, comprising: pipe core welding disc, semiconductor chip is installed on it; With a plurality of lead-in wires, these a plurality of lead-in wires are provided at around the pipe core welding disc, and the semiconductor chip that makes a plurality of lead-in wires electrically be connected to will to be installed on the pipe core welding disc wherein, engages island (bonding island) for the thread bonded on the pipe core welding disc provides.
Engaging the island can be silver-plated (Ag) or gold-plated (Au) layer with predetermined area.
Engaging the island can comprise with a plurality of joints island of rule interval along the edge placement of pipe core welding disc.
According to a further aspect in the invention, provide a kind of lead frame, comprising: pipe core welding disc, semiconductor chip is installed on it; With a plurality of lead-in wires, these a plurality of lead-in wires are provided at around the pipe core welding disc, the semiconductor chip that makes a plurality of lead-in wires electrically be connected to be installed on the pipe core welding disc, wherein, for the thread bonded on the pipe core welding disc provides the bonding land, and providing the assist in engagement part on the bonding land to increase the bond strength between moulding compound and the lead frame.
Engaging zones can be silver-plated (Ag) or gold-plated (Au) layer that the edge along pipe core welding disc provides, and the assist in engagement part can be formed by the material that has the bond strength higher than coating between moulding compound and lead frame.
The assist in engagement part can be a plurality of assist in engagement parts along the edge placement of pipe core welding disc.
According to a further aspect in the invention, provide a kind of lead frame, comprising: pipe core welding disc, semiconductor chip is installed on it; A plurality of lead-in wires, these a plurality of lead-in wires are provided at pipe core welding disc, the semiconductor chip that makes a plurality of lead-in wires electrically be connected to will to be installed on the pipe core welding disc; And ground loop, this ground loop is disposed between pipe core welding disc and a plurality of lead-in wire, wherein, engages the island for the thread bonded on the ground loop provides.
Engaging the island can be silver-plated (Ag) or gold-plated (Au) layer with predetermined area.
Can will engage the island at interval with rule is arranged on the ground loop.
According to a further aspect in the invention, provide a kind of lead frame, comprising: pipe core welding disc, semiconductor chip is installed on it; A plurality of lead-in wires, these a plurality of lead-in wires are provided at the semiconductor chip that makes a plurality of lead-in wires electrically be connected to around the pipe core welding disc will to be installed on the pipe core welding disc; And ground loop, this ground loop is disposed between pipe core welding disc and a plurality of lead-in wire, wherein, for the thread bonded on the ground loop provides the bonding land, and is providing the assist in engagement part to increase the bond strength between moulding compound and the lead frame on the bonding land.
The bonding land can be silver-plated (Ag) or gold-plated (Au) layer, and the assist in engagement part can form by having between moulding compound and lead frame than the material silver-plated or bond strength that Gold plated Layer is higher.
Assist in engagement part can be to be arranged in a plurality of assist in engagement parts on the ground loop at interval with rule.
Description of drawings
According to following detailed description in conjunction with the accompanying drawings, understand above and other aspect of the present invention, feature and other advantage with will be more readily apparent from, wherein:
Fig. 1 is the plane graph that illustrates according to the lead frame of exemplary embodiment of the present invention;
Fig. 2 is the plane graph that illustrates according to the lead frame of another exemplary embodiment of the present invention;
Fig. 3 is the plane graph that illustrates according to the lead frame of another exemplary embodiment of the present invention;
Fig. 4 is the plane graph that illustrates according to the lead frame of another exemplary embodiment of the present invention; And
Fig. 5 is the plane graph that illustrates according to the lead frame of semiconductor chip is installed on its of exemplary embodiment of the present invention.
Embodiment
Will describe exemplary embodiment of the present invention with reference to the accompanying drawings in detail now.Yet, in the description of the operating principle relevant, omit the detailed description of known technology or structure, because it may unnecessarily make spirit of the present invention become unclear with embodiments of the invention.
In the accompanying drawings, will from start to finish use identical Reference numeral to specify identical or similar assembly.
Will be understood that when element to be called as when " being connected " that it can directly be connected with another element or also can have intermediary element with another element.On the contrary, when element is called as when " directly being connected " with another element, there is not intermediary element.In addition, unless carried out opposite description clearly, word " comprises " and will be understood that to represent to comprise mentioned element but do not get rid of any other element.
Fig. 1 is the plane graph that illustrates according to the lead frame of exemplary embodiment of the present invention.
Pipe core welding disc 110 can provide the zone that a plurality of semiconductor chips wherein are installed.A plurality of semiconductor chip (not shown) can be engaged to the upper surface of pipe core welding disc 110 and supported.
In addition, the edge with pipe core welding disc 110 supports pipe core welding disc 110 by the mode that support bar 132 is connected to chassis body 130.
For with to be installed in pipe core welding disc 110 on semiconductor chip form ground connection and be connected, can be that the thread bonded on the pipe core welding disc 110 forms joint island 112.
Be different from the prior art that forms coating along the entire circumference of pipe core welding disc 110, in lead frame, provide a plurality of island coating, as shown in fig. 1 with predetermined area according to present embodiment.Therefore, compared with prior art, in the lead frame shown in Fig. 1, reduced the area that is formed on the whole coating on the pipe core welding disc 110, thereby increased the bond strength with moulding compound according to present embodiment.
Fig. 2 is the plane graph that illustrates according to the lead frame of another exemplary embodiment of the present invention.
With reference to figure 2, identical with the lead frame according to the foregoing description shown in Fig. 1 according to the lead frame of present embodiment, difference is to form bonding land 114 on pipe core welding disc 110, comprising assist in engagement part 116.Therefore, will omit the detailed description of same components.
Bonding land 114 can be the silver-plated or Gold plated Layer along the edge formation of pipe core welding disc 110.
Can in bonding land 114, carry out the thread bonded that is used to form the ground connection connection that will be installed in the semiconductor chip on the pipe core welding disc 110.
Assist in engagement part 116 is formed on the bonding land 114 of predetermined area.Assist in engagement part 116 forms by having between lead frame and moulding compound than the material silver-plated or bond strength that Gold plated Layer is higher.For example, because moulding compound and it on the bond strength between some zones of the upper surface of the pipe core welding disc 110 of the silver-plated or Gold plated Layer of formation be lower than moulding compound and do not form bond strength between other zones of silver-plated or Gold plated Layer on it, so assist in engagement part 116 can be the zone on surface that does not form the pipe core welding disc 110 of silver-plated or Gold plated Layer on it.
Fig. 3 is the plane graph that illustrates according to the lead frame of another exemplary embodiment of the present invention.
With reference to figure 3, identical according to the lead frame of present embodiment with the lead frame shown in Fig. 1 according to the foregoing description, difference is to arrange ground loop 150 between pipe core welding disc 110 and a plurality of lead 120, and forms joint island 152 on ground loop 150.Therefore, will omit the detailed description of same components.
Ground loop 150 is disposed between pipe core welding disc 110 and the lead 120 and by support bar 132 and supports.
Connect in order to form the ground connection that will be installed in the semiconductor chip on the pipe core welding disc 110, ground loop 150 is carried out thread bonded.More specifically, thread bonded is carried out on a plurality of joints island 152 that is formed on the ground loop 150.
Engaging island 152 here, can be silver-plated (Ag) or gold-plated (Au) layer with predetermined area.
Be different from the prior art that forms coating for the thread bonded of the top of whole ground loop 150, in according to the lead frame of present embodiment, form a plurality of island coating, as shown in Figure 3 with predetermined area.Therefore, compared with prior art, reduce the area that is formed on according to the whole coating on the ground loop 150 of the lead frame of present embodiment, thereby increased the bond strength with moulding compound.
Fig. 4 is the plane graph that illustrates according to the lead frame of another exemplary embodiment of the present invention.
With reference to figure 4, identical with the lead frame according to the foregoing description shown in Fig. 1 according to the lead frame of present embodiment, difference is to form bonding land 154 on ground loop 150, comprising assist in engagement part 156.Therefore, will omit the detailed description of same components.
Bonding land 154 can be formed in the silver-plated or Gold plated Layer on the ground loop 150.
Can carry out the thread bonded that is used to form the ground connection connection that will be installed in the semiconductor chip on the pipe core welding disc 110 to bonding land 154.
Assist in engagement part 156 forms the bonding land 154 with predetermined area, and forms by having between lead frame and moulding compound than the material silver-plated or bond strength that Gold plated Layer is higher.For example, because moulding compound and it on the bond strength between some zones of the upper surface of the ground loop 150 of the silver-plated or Gold plated Layer of formation be lower than moulding compound and do not form bond strength between other zones of silver-plated or Gold plated Layer on it, so assist in engagement part 156 can be the zone on surface that does not form the ground loop 150 of silver-plated or Gold plated Layer on it.
Fig. 5 is the plane graph that illustrates according to the lead frame of semiconductor chip is installed on its of exemplary embodiment of the present invention.
With reference to figure 5, a plurality of semiconductor chips 140 are installed on the pipe core welding disc 110.Here, by using adhesive semiconductor chip 140 can be fixed to pipe core welding disc 110.
Can carry out the joint island 112 needed thread bonded that have predetermined area and form at interval along the edge of pipe core welding disc 110 with rule, and do not form on it and have the zone between joint island 112 of coating, thereby compare with the situation that wherein forms coating, increased the bond strength between lead frame and the moulding compound along the entire circumference of pipe core welding disc 110.
As mentioned above, according to exemplary embodiment of the present invention, by reducing the area that is formed on the whole coating on the pipe core welding disc forming a plurality of joints island that forms by coating on the pipe core welding disc, thereby increased the bond strength between lead frame and the moulding compound with predetermined area.Therefore, use and make semiconductor packages, thereby improve reliability according to the lead frame of exemplary embodiment of the present invention.
Though illustrated and described the present invention, to one skilled in the art clearly, under the situation of the defined the spirit and scope of the present invention of claim that do not have disengaging as enclose, can make amendment and change in conjunction with exemplary embodiment.
Claims (12)
1. lead frame comprises:
Pipe core welding disc is installed semiconductor chip on it; With
A plurality of lead-in wires, described a plurality of lead-in wires are provided at around the described pipe core welding disc, the described semiconductor chip that makes described a plurality of lead-in wire electrically be connected to will to be installed on the described pipe core welding disc,
Wherein, for providing, the thread bonded on the described pipe core welding disc engages the island.
2. lead frame according to claim 1, wherein said joint island are silver-plated (Ag) or gold-plated (Au) layers with predetermined area.
3. lead frame according to claim 1, wherein said joint island comprise with a plurality of joints island of rule interval along the edge placement of described pipe core welding disc.
4. lead frame comprises:
Pipe core welding disc is installed semiconductor chip on it; With
A plurality of lead-in wires, described a plurality of lead-in wires are provided at around the described pipe core welding disc, the described semiconductor chip that makes described a plurality of lead-in wire electrically be connected to will to be installed on the described pipe core welding disc,
Wherein, for the thread bonded on the described pipe core welding disc provides the bonding land, and
Providing the assist in engagement part to increase the bond strength between moulding compound and the described lead frame on the described bonding land.
5. lead frame according to claim 4, wherein said bonding land is silver-plated (Ag) or gold-plated (Au) layer that the edge along described pipe core welding disc provides, and described assist in engagement part is formed by the material that has the bond strength higher than described coating between described moulding compound and described lead frame.
6. lead frame according to claim 4, wherein said assist in engagement partly are a plurality of assist in engagement parts along the edge placement of described pipe core welding disc.
7. lead frame comprises:
Pipe core welding disc is installed semiconductor chip on it;
A plurality of lead-in wires, described a plurality of lead-in wires are disposed in around the described pipe core welding disc, the described semiconductor chip that makes described a plurality of lead-in wire electrically be connected to will to be installed on the described pipe core welding disc; And
Ground loop, described ground loop are disposed between described pipe core welding disc and the described a plurality of lead-in wire,
Wherein, for providing, the thread bonded on the described ground loop engages the island.
8. lead frame according to claim 7, wherein said joint island are silver-plated (Ag) or gold-plated (Au) layers with predetermined area.
9. lead frame according to claim 7, wherein said joint island is arranged on the described ground loop at interval with rule.
10. lead frame comprises:
Pipe core welding disc is installed semiconductor chip on it;
A plurality of lead-in wires, described a plurality of lead-in wires are provided at around the described pipe core welding disc, the described semiconductor chip that makes described a plurality of lead-in wire electrically be connected to will to be installed on the described pipe core welding disc; And
Ground loop, described ground loop are disposed between described pipe core welding disc and the described a plurality of lead-in wire,
Wherein, for the thread bonded on the described ground loop provides the bonding land, and
Providing the assist in engagement part to increase the bond strength between moulding compound and the described lead frame on the described bonding land.
11. lead frame according to claim 10, wherein said bonding land is silver-plated (Ag) or gold-plated (Au) layer, and described assist in engagement part forms by having between described moulding compound and described lead frame than described the material silver-plated or bond strength that Gold plated Layer is higher.
12. lead frame according to claim 10, wherein said assist in engagement partly are to be arranged in a plurality of assist in engagement parts on the described ground loop at interval with rule.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020090111365A KR101113518B1 (en) | 2009-11-18 | 2009-11-18 | lead frame |
| KR10-2009-0111365 | 2009-11-18 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN102064150A true CN102064150A (en) | 2011-05-18 |
Family
ID=43999364
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2010105313235A Pending CN102064150A (en) | 2009-11-18 | 2010-10-29 | Lead frame |
Country Status (2)
| Country | Link |
|---|---|
| KR (1) | KR101113518B1 (en) |
| CN (1) | CN102064150A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102661829A (en) * | 2012-04-28 | 2012-09-12 | 无锡永阳电子科技有限公司 | So8 plastic package sensor |
| CN111602242A (en) * | 2018-01-17 | 2020-08-28 | 微芯片技术股份有限公司 | Leadframe die paddle with plated area |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20020027297A1 (en) * | 2000-09-04 | 2002-03-07 | Chikao Ikenaga | Semiconductor package |
| CN101263598A (en) * | 2005-07-18 | 2008-09-10 | 高通股份有限公司 | Integrated circuit packaging |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3994095B2 (en) * | 2004-06-23 | 2007-10-17 | ローム株式会社 | Surface mount electronic components |
| JP2006294998A (en) * | 2005-04-13 | 2006-10-26 | Rohm Co Ltd | Semiconductor apparatus and lead frame |
| CN101834167A (en) * | 2005-06-06 | 2010-09-15 | 罗姆股份有限公司 | Semiconductor device, substrate and semiconductor device manufacturing method |
| KR100673953B1 (en) * | 2005-10-26 | 2007-01-24 | 삼성테크윈 주식회사 | Lead frame |
-
2009
- 2009-11-18 KR KR1020090111365A patent/KR101113518B1/en active IP Right Grant
-
2010
- 2010-10-29 CN CN2010105313235A patent/CN102064150A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20020027297A1 (en) * | 2000-09-04 | 2002-03-07 | Chikao Ikenaga | Semiconductor package |
| CN101263598A (en) * | 2005-07-18 | 2008-09-10 | 高通股份有限公司 | Integrated circuit packaging |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102661829A (en) * | 2012-04-28 | 2012-09-12 | 无锡永阳电子科技有限公司 | So8 plastic package sensor |
| CN111602242A (en) * | 2018-01-17 | 2020-08-28 | 微芯片技术股份有限公司 | Leadframe die paddle with plated area |
Also Published As
| Publication number | Publication date |
|---|---|
| KR101113518B1 (en) | 2012-02-29 |
| KR20110054635A (en) | 2011-05-25 |
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Application publication date: 20110518 |