CN102063275B - Embedded system and adaptive method of memory expansion thereof - Google Patents
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- CN102063275B CN102063275B CN 201010616387 CN201010616387A CN102063275B CN 102063275 B CN102063275 B CN 102063275B CN 201010616387 CN201010616387 CN 201010616387 CN 201010616387 A CN201010616387 A CN 201010616387A CN 102063275 B CN102063275 B CN 102063275B
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Abstract
The invention discloses an embedded system and an adaptive method of memory expansion thereof. The embedded system comprises a CPU (Central Processing Unit), expansion SDRAM (Synchronous Dynamic Random Access Memories) and Flash memories, wherein a plurality of GPIO (General Purpose Input/Output) pins of the CPU respectively obtain different state combinations by connecting or disconnecting a pull-up resistor or a pull-down resistor, each state combination corresponds to one SDRAM for system extension, and the CPU obtains the manufacturer ID of the corresponding expansion SDRAM according to the current state combination of the GPIO pins and initializes the SDRAM by invoking the initialization parameters of the corresponding manufacturer; and the ID of a corresponding Flash memory manufacturer is obtained by means of the command word of one Flash memory, and the command word of the corresponding manufacturer is invoked to read and write the Flash memory. In the invention, the manufacturer ID of memories and equipment ID are read in a software mode so as to distinguish different types of memories, so that one set of BSP (Board Support Package) can be compatible with memories of different manufactures and different types. The maintenance of BSP with different configurations by basic-level personnel is reduced, the extendibility of the system is increased, and the investment in engineering maintenance is reduced.
Description
Technical field
The present invention relates to the memory expansion of embedded system, be specifically related to the automatic adaptation method of embedded system and memory expansion thereof.
Background technology
At present, the range of application of embedded system is more and more extensive, and for embedded system, its compatibility is better, and the feasibility of system is just higher, and the market competitiveness is also just larger.Therefore, the compatibility between each building block has important effect in the exploitation of embedded system.
In the performance history of present embedded system, along with updating and the newly lasting exploitation of application function of upper application software function, need the data volume of store and management also increasing, therefore produced the problem of the memory storage space deficiency in the original system.In order to address this is that, embedded system need to by changing the mode of storer or increase storer, be carried out the internal memory expansion in system's operational process.
In embedded system, the most frequently used memory unit has SDRAM and Flash two classes, because may there be certain difference in different manufacturers and dissimilar SDRAM and Flash in design, therefore can cause initialization or the read-write operation of different manufacturers and dissimilar SDRAM and Flash also different.For example, the operational order word of the Flash of different vendor is different, needs to send different command words and the operation such as just can read and write to Flash, wipe; And also may there be some differences in the dissimilar Flash of same manufacturer production in design, and for example sector-size is inconsistent.In addition, different vendor or dissimilar SDRAM, because memory capacity there are differences, perhaps the refresh cycle different, initialized the time, initialized parameter is also different.Therefore, embedded system generally all can be carried out General design to SDRAM and Flash, so that the expansion of memory capacity.The present practice is, BSP (Board Support Package, the application program of bottom and the functional module of hardware platform) developer adopt one the cover BSP safeguard SDRAM or the Flash storer of one type, yet, when this practice need to increase or change SDRAM or Flash in system, need to overlap BSP more according to type exploitation and the maintenance of storer, thereby bring the workload of a large amount of repetitions for exploitation and maintainer.
Summary of the invention
Technical matters to be solved by this invention is to solve the embedded system storer can not realize the automatic adaptation scaling problem.
In order to solve the problems of the technologies described above, the technical solution adopted in the present invention is to provide the automatic adaptation method of a kind of embedded system and memory expansion thereof.
embedded system provided by the invention, comprise CPU and expansion SDRAM storer, some GPIO pins of described CPU are respectively by being communicated with or disconnection pull-up resistor or the different combinations of states of pull down resistor acquisition, and every kind of respectively corresponding a kind of SDRAM storer for system extension of described combinations of states, described CPU obtains the vendor id of described expansion SDRAM storer according to the current state combination of described some GPIO pins, and the initiation parameter that calls corresponding manufacturer carries out initialization to SDRAM, described expansion SDRAM storer is a kind of of described SDRAM storer for system extension.
In said system, described some GPIO pins are realized break-make with described pull-up resistor or pull down resistor by toggle switch.
In said system, described SDRAM storer for system extension is the combination of a SDRAM or a plurality of SDRAM storeies.
In said system, the combination that is combined as a plurality of identical or different SDRAM storeies of described a plurality of SDRAM storeies.
in said system, also comprise some spread F lash storeies, the attribute of the Flash that uses according to system, define a plurality of structure arrays for representing the Flash memory attribute that system extension is used, this structure array comprises respectively the vendor id of each Flash storer, amount of capacity, sector-size and system are the start address that this Flash storer distributes, described CPU obtains respectively the vendor id of described some spread F lash storeies and the attribute of Flash storer to the read command word that described start address sends different vendor successively, when the Installed System Memory device is expanded, send and read accordingly, the write order word uses corresponding spread F lash storer.
The automatic adaptation method of embedded system memory expansion provided by the invention comprises the following steps:
Set up the different conditions combination of some GPIO pins and the one-to-one relationship of the SDRAM storer that is used for system extension;
The different conditions of expanding the SDRAM storer and adjusting some GPIO pins according to described corresponding relation is installed;
CPU reads the vendor id of the described expansion of the combinations of states acquisition SDRAM storer of current some GPIO pins;
The initiation parameter that calls corresponding SDRAM memory vendor carries out initialization to described expansion SDRAM storer.
In said method, described SDRAM storer for system extension is the combination of one or more SDRAM storeies.
In said method, the combination that is combined as a plurality of identical or different SDRAM storeies of described a plurality of SDRAM storeies.
In said method, if use the Flash memory expansion:
At first the attribute of the Flash that uses according to system, definition is for the structure array that represents a plurality of Flash memory attributes that system extension is used, and this structure array comprises respectively vendor id, amount of capacity, sector-size and the system of each Flash storer and is the start address of this Flash storer distribution;
CPU is that the start address that the Flash storer distributes sends the vendor id of the corresponding Flash storer of read command word acquisition of different vendor to system successively, and then searches described structure array acquisition spread F lash storer device ID and attribute thereof;
According to vendor id and the corresponding reading order word of device id transmission of Flash storer, described spread F lash storer is read and write.
In said method, when using the method extension storage capacity of position expansion, select the SDRAM storer of same size; When using the method extension storage capacity of word expansion, select the combination of SDRAM storer or Flash storer or SDRAM storer and Flash storer.
The present invention, adopt the ID of manufacturer and the device id of the mode read memory of software, in order to distinguish dissimilar storer, and operate accordingly, thereby make a cover BSP can compatible different manufacturers, dissimilar storer, can be to the hardware compatibility of difference configuration, effectively reduced the work that the bottom personnel safeguard the BSP of difference configuration, increase the extensibility of system, reduced the input of engineering maintenance.
Description of drawings
Fig. 1 is a kind of structural representation of embedded system provided by the invention;
Fig. 2 is the process flow diagram of the automatic adaptation method of embedded system memory expansion provided by the invention;
Fig. 3 is the automatic adaptation process flow diagram of SDRAM memory expansion;
Fig. 4 is the automatic adaptation process flow diagram of Flash memory expansion.
Embodiment
Below in conjunction with accompanying drawing, the present invention is made detailed explanation.
Fig. 1 is Embedded System Structure schematic diagram provided by the invention, and as shown in Figure 1, embedded system comprises CPU, expansion SDRAM storer and spread F lash storer.
some GPIO pins of CPU obtain different combinations of states (plug-in mounting resistance or extract resistance) by being communicated with or disconnecting pull-up resistor or pull down resistor respectively, preset the combinations of states of each GPIO pin and a kind of one-to-one relationship of the SDRAM storer for system extension, the SDRAM storer that is used for system extension is the combination of a SDRAM or a plurality of SDRAM storeies, the combination of a plurality of SDRAM storeies can be the combination of a plurality of identical SDRAM storeies, it can be also the combination of a plurality of different SDRAM storeies, different SDRAM storeies refer to the storer of different vendor or the storer of same manufacturer different model.In order to adjust easily the break-make of GPIO pin and pull-up resistor or pull down resistor, can realize by the mode that toggle switch is set.When embedded system is carried out memory expansion, make the combinations of states of each GPIO pin of CPU corresponding with the type of the SDRAM storer that will expand by adjusting pull-up resistor or pull down resistor, CPU obtains the vendor id of the expansion SDRAM storer of system according to the current state assembled state of each GPIO pin, and the initiation parameter that calls corresponding manufacturer among boot carries out initialization to SDRAM.Same section setup code can compatible same capability multiple SDRAM.In embedded development, same is selected the SDRAM that can connect the multi-disc same capability on CS, consists of a memory headroom.If adopt a plurality of to select CS to connect, only need to be set to a specific value by the GPIO pin, and the GPIO value that should be worth when being connected SDRAM with single choosing is not overlapping.Before these SDRAM of initialization, what adopt according to the value judgement system of GPIO is that a plurality of choosings connect SDRAM, or single choosing connects SDRAM, then adopts corresponding internal memory initialization function.
If embedded system also adopts some Flash storeies to expand, at first be these Flash memory allocated spaces (comprising start address and memory capacity) all, and for the storage space of these Flash distribution not overlapping.When these Flash are carried out read-write operation, thereby the CPU corresponding start address of distributing for these Flash storeies to the system successively read command word that sends different vendor obtains respectively the vendor id of some Flash storeies and the attribute of Flash storer.The attribute of Flash storer refers to the start address that amount of capacity, sector-size and the system of Flash storer distribute for this Flash storer.After the vendor id of acquisition spread F lash storer and the attribute of Flash storer, when the Installed System Memory device is expanded, send corresponding reading and writing command word and use corresponding spread F lash storer.
The present invention also provides a kind of automatic adaptation method of embedded system memory expansion, as shown in Figure 2, comprises the following steps:
The attribute of A10, the Flash that at first uses according to system, definition is for the structure array that represents a plurality of Flash memory attributes that system extension is used, and this structure array comprises respectively vendor id, amount of capacity, sector-size and the system of each Flash storer and is the start address of this Flash storer distribution;
A20, set up the different conditions combination of some GPIO pins and the one-to-one relationship of the SDARM storer that is used for system extension, as previously mentioned, the SDRAM storer that is used for system extension is the combination of a SDRAM or a plurality of SDRAM storeies, the combination of a plurality of SDRAM storeies can be the combination of a plurality of identical SDRAM storeies, can be also the combination of a plurality of different SDRAM storeies, different SDRAM storeies refer to the storer of different vendor or the storer of same manufacturer different model.The also different conditions combination of corresponding different some GPIO pins of SDRAM storer with same manufacturer of different memory attribute.
A30, installation are expanded the SDRAM storer and are adjusted the different conditions of some GPIO pins according to described corresponding relation;
The combinations of states that A40, CPU read current some GPIO pins obtains the vendor id of the expansion SDRAM storer that current system installs; And the initiation parameter that calls corresponding SDRAM memory vendor carries out initialization to expansion SDRAM storer.
A60, installation spread F lash storer, CPU is that the start address that spread F lash storer distributes sends the vendor id of the corresponding Flash storer of read command word acquisition of different vendor to system successively, and then searches device id and the attribute thereof that described structure array obtains spread F lash storer;
A70, send corresponding reading order word according to the vendor id of Flash storer and device id described spread F lash storer is read and write.
In the automatic adaptation method of embedded system memory expansion provided by the invention, when using the method extension storage capacity of position expansion, select the SDRAM storer of same size.Word (unit) number that position expansion generally is applicable to storer does not meet the demands and in the inadequate situation of figure place, the figure place of each storage unit is expanded.Number of words is constant by increasing word length comes the expansion capacity for the method, needs to select the chip of model size of the same race, and namely the memory attributes such as the manufacturer of SDRAM storer and amount of capacity, sector-size are identical.
When using the method extension storage capacity of word expansion, select dissimilar storer, the figure place that the word expansion is used for storage chip meets the demands and the inadequate situation of number of words, is the expansion to number of memory cells.Figure place is constant by increasing number of words comes the expansion capacity for the method, namely can select the SDRAM storer, also can select the Flash storer.In practical engineering application, be mainly the expansion capacity because store number of words.
Use below by several typical cases the present invention is further detailed.
Suppose original a slice SDRAM storer A on embedded system, the combinations of states value of the GPIO pin that it is corresponding is 1, now according to the practical application needs, it is expanded, and be below the detailed introduction of multiple extended mode.
(1), increase the SDRAM storer B of the SDRAM storer A1 of a slice and SDRAM storer A same manufacturer or different vendor as extended memory, as shown in Figure 3.
According to pre-defined, the combinations of states value of the GPIO pin corresponding with SDRAM storer A1 is 2, and the combinations of states value of the GPIO pin corresponding with SDRAM storer B is 3.
When using SDRAM storer A1 to expand, at first extended memory SDRAM storer A1 is installed on embedded system, then adjust toggle switch, some GPIO pins and corresponding pull-up resistor or pull down resistor are connected, thereby change the combinations of states value of GPIO pin, the combinations of states value that makes current GPIO pin is 2, and A1 is corresponding with extended memory SDRAM storer.When system initialization, CPU reads the state SDRAMType of each GPIO pin, the type of judgement SDRAMType, thereby the vendor types SDRAM_A of acquisition SDRAM storer A1, then call the initialize memory parameter of this manufacturer and carry out initialization, realized the automatic adaptation of extended memory.
When using SDRAM storer B to expand, when extended memory SDRAM storer B is installed on embedded system, adjust toggle switch, the combinations of states value that changes the GPIO pin is 3, B is corresponding with the SDRAM storer, the execution in step of following CPU is identical with above-mentioned execution in step, repeats no more.
When needs increased the multi-disc SDRAM storer different from SDRAM storer A, its method was similar to preceding method, is the different GPIO combinations of states of combination correspondence of multi-disc SDRAM storer.For example, the combinations of states value of GPIO pin is 4 at this moment.
(2), increase a slice SDRAM storer A1 identical with SDRAM storer A.
When increasing the multi-disc SDRAM storer identical with SDRAM storer A, the combinations of states value of GPIO is all not identical.For example, when increasing by two SDRAM storeies identical with SDRAM storer A, the combinations of states value of GPIO pin is 5; When increasing by three SDRAM storeies identical with SDRAM storer A, the combinations of states value of GPIO pin is 6, etc.
(3), increase multi-disc Flash storer.
Because the position of the initialization of SDRAM and FLASH and operation is different, SDRAM only needs an initialization, carries out in boot; And Flash just has read-write operation in the process that system carries out.Therefore, when expanding with FLASH, need to adopt different disposal routes.The below is illustrated as an example of two Flash storer FlashA and FlashB example, as shown in Figure 4:
(1) definition is used for representing the overall array variable of a plurality of Flash:
typedef struct flash_dev_s{
UINT32 base；
int vendorID；
int deviceID；
int sectors；
int lgSectorSize；
}flash_dev_t；
In above-mentioned Flash structure of arrays, it is the start address that a certain Flash distributes that base is used for tag system; VendorID is used for identifying the vendor id of this Flash device, and deviceID is used for identifying the device id of this Flash device, and sectors is used for identifying this Flash number of sectors, and lgSectorSize identifies the size of this Flash sector.
(2) global variable VerdorID of definition, and initialize is 0, and this variable is used for depositing the vendor types of Flash.
(3) the Flash read command word of transmission vendor A is the start address base that Flash distributes to system, and the Verdor ID of Flash is read in the address of then depositing vendor id from Flash.
Whether (4) judgement obtains in Verdor ID and the array VendorA_Flash that represents vendor A member variable vendorID consistent, if inconsistent, jumps to step (6).
(5) send the Flash read command word of vendor A, and the Device ID of Flash is read in the address of storage equipment ID from Flash.If the Device ID that obtains is unlikely with the deviceID in VendorA_Flash, and also inconsistent with the deviceID in VendorA1_Flash, program execution in step (6); Otherwise, jump to step (7).
Flash A1 and Flash A are mainly in order to distinguish the Flash chip of same producer different capabilities, and also there be the inconsistent of sector-size in the dissimilar Flash device of same producer, and in the time of the overall array of definition, sector-size is an important parameter.Flash B refers to the Flash of other producers, because the read write command word of different manufacturers is different.In addition, SDRAM is internal memory, is equivalent to the function of the memory bar of computer the inside, and Flash plays the part of the role of hard disk.If there is no Flash, increase a slice Flash; Perhaps adopt new chip selection signal CS to increase a slice Flash on the basis that Flash is arranged, can regard the Flash expansion as.Every increase a slice or compatible a slice Flash, all only need to increase the overall array of this Flash, increase the code of surveying this Flash ID according to overall array in surveying producer's message code of Flash, increase command word branch corresponding to this Flash just passable when read-write.
(6) send the Flash read command word of the B of manufacturer, and Verdor ID and the Device ID of Flash are read in the address of storage equipment ID from Flash.If the Verdor ID that obtains and Device ID are inconsistent with verdorID and deviceID in the array VendorB_Flash that represents vendor A, program is carried out and is finished.
(7) Verdor ID and the Device ID that obtains combined, assignment is to global variable VerdorID.
(8) select different overall Flash array VendorA_Flash, VendorA1_Flash and VendorB_Flash according to global variable VerdorID, and send different command words according to different arrays, the Flash device is carried out reading and writing and erase operation.
(9) EO.
The present invention is not limited to above-mentioned preferred forms, and anyone should learn the structural change of making under enlightenment of the present invention, and every have identical or close technical scheme with the present invention, within all falling into protection scope of the present invention.
Claims (8)
1. embedded system, comprise CPU and expansion SDRAM storer, it is characterized in that some GPIO pins of described CPU are respectively by being communicated with or disconnection pull-up resistor or the different combinations of states of pull down resistor acquisition, and every kind of respectively corresponding a kind of SDRAM storer for system extension of described combinations of states, described CPU obtains the vendor id of described expansion SDRAM storer according to the current state combination of described some GPIO pins, and the initiation parameter that calls corresponding manufacturer carries out initialization to SDRAM, described expansion SDRAM storer is a kind of of described SDRAM storer for system extension,
also comprise some spread F lash storeies, the attribute of the Flash that uses according to system, define a plurality of structure arrays for representing the Flash memory attribute that system extension is used, this structure array comprises respectively the vendor id of each Flash storer, amount of capacity, sector-size and system are the storage space that this Flash storer distributes, described storage space comprises start address and memory capacity, and for the storage space that these Flash distribute not overlapping, described CPU obtains respectively the vendor id of described some spread F lash storeies and the attribute of Flash storer to the read command word that described start address sends different vendor successively, when the Installed System Memory device is expanded, send and read accordingly, the write order word uses corresponding spread F lash storer.
2. embedded system as claimed in claim 1, is characterized in that, described some GPIO pins are realized break-make with described pull-up resistor or pull down resistor by toggle switch.
3. embedded system as claimed in claim 1, is characterized in that, described SDRAM storer for system extension is the combination of a SDRAM or a plurality of SDRAM storeies.
4. embedded system claimed in claim 3, is characterized in that, the combination that is combined as a plurality of identical or different SDRAM storeies of described a plurality of SDRAM storeies.
5. the automatic adaptation method of embedded system memory expansion is characterized in that comprising the following steps:
Set up the different conditions combination of some GPIO pins and the one-to-one relationship of the SDRAM storer that is used for system extension;
The different conditions of expanding the SDRAM storer and adjusting some GPIO pins according to described corresponding relation is installed;
CPU reads the vendor id of the described expansion of the combinations of states acquisition SDRAM storer of current some GPIO pins;
The initiation parameter that calls corresponding SDRAM memory vendor carries out initialization to described expansion SDRAM storer;
The Flash storer is installed, at first the attribute of the Flash that uses according to system, definition is for the structure array that represents a plurality of Flash memory attributes that system extension is used, this structure array comprises respectively vendor id, amount of capacity, sector-size and the system of each Flash storer and is the storage space of this Flash storer distribution, described storage space comprises start address and memory capacity, and the storage space that distributes for these Flash is not overlapping;
CPU is that the start address that the Flash storer distributes sends the vendor id of the corresponding Flash storer of read command word acquisition of different vendor to system successively, and then searches described structure array acquisition spread F lash memory I D and attribute thereof;
According to vendor id and the corresponding reading order word of device id transmission of Flash storer, described spread F lash storer is read and write.
6. the automatic adaptation method of embedded system memory expansion as claimed in claim 5, is characterized in that, described SDRAM storer for system extension is the combination of one or more SDRAM storeies.
7. the automatic adaptation method of embedded system memory expansion as claimed in claim 6, is characterized in that, the combination that is combined as a plurality of identical or different SDRAM storeies of described a plurality of SDRAM storeies.
8. the automatic adaptation method of embedded system memory expansion as claimed in claim 7, is characterized in that, when using the method extension storage capacity of position expansion, selects the SDRAM storer of same size; When using the method extension storage capacity of word expansion, select the combination of SDRAM storer or Flash storer or SDRAM storer and Flash storer.
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| CN102662858B (en) * | 2012-03-08 | 2015-03-25 | 上海爱信诺航芯电子科技有限公司 | Virtual storage method for expanding capacity of SRAM |
| CN103458290A (en) * | 2013-08-21 | 2013-12-18 | 深圳市同洲电子股份有限公司 | Method compatible with multiple memory timing sequences and digital television terminal |
| CN105242749A (en) * | 2015-09-07 | 2016-01-13 | 深圳微步信息股份有限公司 | Mainboard of all-in-one computer, all-in-one computer, and resolution adjustment method |
| US10628309B1 (en) * | 2017-10-05 | 2020-04-21 | American Megatrends International, Llc | Loading a serial presence detect table according to jumper settings |
| CN109725939A (en) * | 2017-10-27 | 2019-05-07 | 深圳市中兴微电子技术有限公司 | A kind of chip starting method, chip and computer readable storage medium |
| CN110141221B (en) * | 2019-06-28 | 2021-04-13 | 联想(北京)有限公司 | Monitoring equipment, method and system |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1514379A (en) * | 2003-06-02 | 2004-07-21 | 北京普天慧讯信息技术有限公司 | Mobile information device possessing embedded open platform system structure and its extension method |
| US6910113B2 (en) * | 2001-09-07 | 2005-06-21 | Intel Corporation | Executing large device firmware programs |
| CN1713167A (en) * | 2004-06-25 | 2005-12-28 | 中国科学院自动化研究所 | Structure design of minimum system based on ARM embedded microprocessor |
| CN1801092A (en) * | 2006-01-19 | 2006-07-12 | 北京中星微电子有限公司 | Embedded chip and its program space extension method |
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Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6910113B2 (en) * | 2001-09-07 | 2005-06-21 | Intel Corporation | Executing large device firmware programs |
| CN1514379A (en) * | 2003-06-02 | 2004-07-21 | 北京普天慧讯信息技术有限公司 | Mobile information device possessing embedded open platform system structure and its extension method |
| CN1713167A (en) * | 2004-06-25 | 2005-12-28 | 中国科学院自动化研究所 | Structure design of minimum system based on ARM embedded microprocessor |
| CN1801092A (en) * | 2006-01-19 | 2006-07-12 | 北京中星微电子有限公司 | Embedded chip and its program space extension method |
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