CN102027342B - Spectral module and method for manufacturing spectral module - Google Patents
Spectral module and method for manufacturing spectral module Download PDFInfo
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- CN102027342B CN102027342B CN2009801172801A CN200980117280A CN102027342B CN 102027342 B CN102027342 B CN 102027342B CN 2009801172801 A CN2009801172801 A CN 2009801172801A CN 200980117280 A CN200980117280 A CN 200980117280A CN 102027342 B CN102027342 B CN 102027342B
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- G01J3/00—Spectrometry; Spectrophotometry; Monochromators; Measuring colours
- G01J3/02—Details
- G01J3/0205—Optical elements not provided otherwise, e.g. optical manifolds, diffusers, windows
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- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J3/00—Spectrometry; Spectrophotometry; Monochromators; Measuring colours
- G01J3/02—Details
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J3/00—Spectrometry; Spectrophotometry; Monochromators; Measuring colours
- G01J3/12—Generating the spectrum; Monochromators
- G01J3/18—Generating the spectrum; Monochromators using diffraction elements, e.g. grating
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- G—PHYSICS
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- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
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- G01J3/0208—Optical elements not provided otherwise, e.g. optical manifolds, diffusers, windows using focussing or collimating elements, e.g. lenses or mirrors; performing aberration correction
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- G01J3/02—Details
- G01J3/0205—Optical elements not provided otherwise, e.g. optical manifolds, diffusers, windows
- G01J3/0243—Optical elements not provided otherwise, e.g. optical manifolds, diffusers, windows having a through-hole enabling the optical element to fulfil an additional optical function, e.g. a mirror or grating having a throughhole for a light collecting or light injecting optical fiber
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Abstract
Provided is a spectral module with highly enhanced reliability. In the spectral module (1) related in the invention, when light (L1) traveling to a spectroscopic unit (4) passes through a light transmissible hole (50), the light that passes through a light incident side unit (51) which becomes narrower toward the end of the substrate (2) and that is incident on a light projection side unit (52) formed opposite to the bottom surface (51b) of the light incident side unit (51) is only projected from a light projection aperture (52a). Thus, since stray light (M) incident on the side surface (51c) or bottom surface (51b) of the light incident side unit (51) is reflected to the side reverse to the light projection side unit (52), the incidence of the stray light to the light projection side unit (52) can be suppressed. Therefore, it is possible to enhance the reliability of the spectral module (1).
Description
Technical field
The present invention be relevant to light carry out light splitting and the spectral module that detected with and manufacture method.
Background technology
As in the past the spectral module spectral module put down in writing of well-known patent documentation 1～3 for example.The spectral module of record possesses in patent documentation 1: make light transmission supporter, make light incide supporter entrance slit portion, the light that incides supporter is carried out light splitting and the concave diffraction grating that reflect, detects by concave diffraction grating and carry out light splitting and the diode of the light that reflects.
Patent documentation 1: the flat 4-294223 communique of Japanese Patent Application Publication
Patent documentation 2: Japanese Patent Application Publication 2000-65642 communique
Patent documentation 3: Japanese Patent Application Publication 2004-354176 communique
Summary of the invention
Yet the spectral module of putting down in writing for patent selected works 1 can become the parasitic light that carries out scattering in supporter from the light of entrance slit portion incident, thereby has the reliability of spectral module that the worry that reduces takes place.
Therefore, the present invention is referred from such problem and finishes, and its purpose is to provide a kind of manufacture method of spectral module and this spectral module of high reliability.
In order to achieve the above object, spectral module involved in the present invention is characterised in that to possess: the main part that makes light transmission; Spectrum part, the light that the predetermined surface side from main part is incided main part carry out light splitting and to the predetermined surface lateral reflection; Photodetector is configured on the predetermined surface, detects the light that has carried out light splitting by spectrum part; Photodetector has baseplate part, be formed with the light that light passed through of advancing to spectrum part on this baseplate part and pass through the hole, light comprises the light incident side portion that delimit light incident opening and the light exit side portion that delimit light outgoing opening by the hole, light incident side portion has with the bottom surface of predetermined surface almost parallel and is to form with the form that becomes more and more narrow towards predetermined surface, and light exit side portion has with the side of predetermined surface approximate vertical and with the form relative with the bottom surface and forms.
In this spectral module, the light of advancing to spectrum part by light by the hole in, only incide the light of the light exit side portion that forms with the form relative with the bottom surface of the light incident side portion that becomes more and more narrow towards the predetermined surface side of main part, could be from light outgoing opening by outgoing.At this moment, incide the light of side or the bottom surface of light incident side portion, because be reflected to the opposition side of light exit side portion, incide light exit side portion so can suppress parasitic light.Therefore, can improve the reliability of spectral module.
In spectral module involved in the present invention, between photodetector and predetermined surface, be formed with light absorbing light absorbing zone, light absorbing zone has the light that light passed through of advancing by the Kong Erxiang spectrum part by light and passes through slit, with the direction of the bearing of trend approximate vertical of the diffraction grating groove that is formed on spectrum part on, the width of light by slit is preferably less than the minimum widith of light exit side portion.
The resolution of spectral module be subjected to a great extent with the direction of the bearing of trend approximate vertical of diffraction grating groove on the influence of minimum widith of slit.For this reason, by with the direction of the bearing of trend approximate vertical of diffraction grating groove on, the width of the light that makes light absorbing zone by slit be less than the light of the photodetector minimum widith by the hole, thereby can improve the resolution of spectral module.This is conducive to improve the reliability of spectral module.
In spectral module involved in the present invention, baseplate part is made of crystalline material, and the side of light incident side portion preferably forms along (111) crystal plane.The baseplate part that constitutes with respect to the crystalline material by Si etc., by forming the side by methods such as Wet-type etchings along (111) crystal plane of material, can form light incident side portion accurately, thereby can form high-precision light by the hole, and can improve the reliability of spectral module.
The manufacture method of spectral module involved in the present invention is characterized in that, spectral module possesses: the main part that makes light transmission; Spectrum part, the light that the predetermined surface side from main part is incided main part carry out light splitting and to the predetermined surface lateral reflection; Photodetector detects the light that has carried out light splitting by spectrum part; The manufacture method of spectral module of the present invention possesses following operation: the photodetector preparatory process, and preparation has the photodetector of baseplate part, is formed with light on this substrate and passes through the hole; Arrangement step, will be in the photodetector preparatory process ready photodetector and spectrum part be disposed at main part; The photodetector preparatory process comprises: light incident side portion forms operation, implement Wet-type etching by the interarea side from baseplate part, to have and the bottom surface of an interarea almost parallel and the form that becomes more and more narrow towards another interarea, form and delimit light by the light incident side portion of the light incident opening in hole; Light exit side portion forms operation, after light incident side portion forms operation, implement dry-etching by another interarea side from baseplate part, with have with the side of an interarea approximate vertical and relative with the bottom surface to form, form and delimit light by the light exit side portion of the light outgoing opening in hole.
Manufacture method according to spectral module involved in the present invention, when baseplate part formation light is by the hole, implement Wet-type etching by the interarea side from baseplate part, after the light incident side portion that has formed delimitation light incident opening, implement Wet-type etching by another interarea side from baseplate part, thereby form the light exit side portion that delimit light outgoing opening.As mentioned above, form light incident side portion by implementing Wet-type etching, can shorten the time of photodetector preparatory process and reduce cost.In addition, form light exit side portion accurately by implementing dry-etching, have the light of stable light by characteristic by the hole thereby can form, and can improve the high reliability of spectral module.
A kind of spectral module of high reliability can be provided according to the present invention.
Description of drawings
Fig. 1 is the planimetric map of the related spectral module of embodiments of the present invention.
Fig. 2 is along the sectional view by the represented II-II line of Fig. 1.
Fig. 3 is the backplan of spectral module.
Fig. 4 is that expression light is by the major part amplification sectional view in hole.
Fig. 5 is that expression light is by the major part amplification view in hole.
Fig. 6 is the sectional view that forms the operation of light incident side portion for explanation.
Fig. 7 is the sectional view that forms the operation of light exit side portion for explanation.
Fig. 8 is that expression light is by the major part amplification view corresponding to Fig. 5 of bore deformation example.
Fig. 9 is that expression light is by the major part amplification view corresponding to Fig. 5 of bore deformation example.
Figure 10 is that expression light is by the major part amplification view corresponding to Fig. 5 of bore deformation example.
Figure 11 is the sectional view corresponding to Fig. 2 of the related spectral module of expression the 2nd embodiment.
Figure 12 is that the related light of expression the 2nd embodiment is by the major part amplification sectional view corresponding to Fig. 3 in hole.
Symbol description
1,21. spectral module
2. substrate (main part)
3. lens section (main part)
4. spectrum part
5,22. photodetectors
5a, the 22a. semiconductor substrate
5b, the 22b. optical detection part
6. diffracting layer
6a. diffraction grating groove
13,27. light absorbing zones
50,60,70,80,90. light pass through the hole
51,61,71,81,91. light incident side portions
52,62,72,82,92. light exit side portions
51a, 61a, 71a, 81a, 91a. light incident opening
51b, 61b, 71b, 81b. bottom surface
51c, 61c, 71c, 81c, 92c. side
52a, 62a, 72a, 82a, 92a. light outgoing opening
Top 92b. (bottom surface)
52b, 62b, 72b, 82b, 91b. side
A. an interarea
B. another interarea
Embodiment
Following with reference to accompanying drawing to the detailed explanation in addition of the preferred implementation of spectral module involved in the present invention.Also have, in each accompanying drawing, identical symbol is marked in identical or suitable part, thereby avoid repeat specification.
[the 1st embodiment]
As shown in Figure 1, 2, spectral module 1 possesses substrate (main part) 2 that the light L1 that makes from the front (predetermined surface) 2a carry out incident sees through, makes through substrate 2 and carry out lens section (main part) 3 that the light L1 of incident sees through, the light L1 that incides lens section 3 is carried out light splitting and the spectrum part 4 that reflects, detects the photodetector 5 that has been carried out the light L2 of light splitting by spectrum part 4 from plane of incidence 3a.Spectral module 1 is a kind ofly with spectrum part 4 light L1 light splitting to be become light L2 corresponding to a plurality of wavelength, thereby and by detecting the miniature spectral module that this light L2 measure the Wavelength distribution of light L1 or the intensity of specific wavelength composition etc. by photodetector 5.
Also have, the light absorbing zone 13 that is formed on substrate 2 front 2a has: slit (light the passes through slit) 13a that the light L1 that advances to spectrum part 4 by hole 50 (aftermentioned) via the light of photodetector 5 passes through, and the peristome 13b that passes through to the light L2 of the optical detection part 5b (aftermentioned) of photodetector 5.Can enumerate metal or the oxidized metal of colouring resin (silicone resin, epoxy resin, acryl resin, carbamate resins, polyimide resin, compound resin etc.), Cr and the Co etc. that contain black resist, filler (carbon and oxide etc.) or contain the stacked film of these materials, cavernous pottery and metal or oxidized metal as the material of light absorbing zone 13.
As Fig. 2, shown in 3, lens section 3 by with substrate 2 identical materials, the photopermeability resin, the inorganic organic mixed material of photopermeability, perhaps make carbon copies the photopermeability low-melting glass of (photoetching) shaping usefulness, and formation such as plastics, its be shaped as hemispheric lens by with its plane of incidence (bottom surface) 3a approximate vertical and mutually almost parallel 2 plane cutting and formed the shape of side 3b [for example radius-of-curvature be 6～10mm, the total length of plane of incidence 3a is 12～18mm, the overall with of plane of incidence 3a (distance between the 3b of side) is 6～10mm, highly be 5～8mm], and be as the lens of the optical detection part 5b that will be imaged in photodetector 5 by the light L2 that spectrum part 4 carries out light splitting and exercise its function.Also have, it also can be non-spherical lens that lens shape is not limited to spherical lens.
Spectrum part 4 is a kind of following three layers reflection-type diffraction gratings (gratings) that have, these three layers passivation layer 8 that is respectively the diffracting layer 6 of the outer surface that is formed on lens section 3, the reflection horizon 7 that is formed on the outer surface of diffracting layer 6, covering diffracting layer 6 and reflection horizon 7.Diffracting layer 6 is to be set up in parallel a plurality of diffraction grating groove 6a by the long side direction along substrate 2 to form, the bearing of trend of diffraction grating groove 6a basically consistent in the long side direction of substrate 2 perpendicular direction roughly.Diffracting layer 6 for example adopts the binary raster (binary grating) in the blazed grating (blazed grating) of serrated crosssection, rectangular-shaped cross section and the holographic grating (holographic grating) in sinusoidal wave shape cross section etc., and it is to form with optical resin by the manifolding (photoetching) that photocuring has epoxy resin, acryl resin or an organic-inorganic hybrid resin etc. of photo-curable.Reflection horizon 7 is membranaceous, and it is for example by the outer surface of evaporations such as Al and Au in diffracting layer 6 formed.Also have, can adjust the optics NA of spectral module 1 by adjusting the area that forms reflection horizon 7.In addition, also can lens section 3 and the diffracting layer 6 that constitutes spectrum part 4 be formed as one by above-mentioned material.Passivation layer 8 is membranaceous, and it is for example to pass through MgF
2And SiO
2Form Deng the outer surface of evaporation in diffracting layer 6 and reflection horizon 7.
As Fig. 1,2 and shown in Figure 4, photodetector 5 is disposed on the front 2a of substrate 2, and (for example, total length is 5～10mm, and overall with is 1.5～3mm, the semiconductor substrate 5a (baseplate part) of thickness 0.1～0.8mm) to have rectangular shape.Semiconductor substrate 5a is made of the crystalline material of Si, GaAs, InGaAs, Ge, SiGe etc.
Face in spectrum part 4 sides of semiconductor substrate 5a is formed with optical detection part 5b.Optical detection part 5b is CCD image sensor, PD array or CMOS image sensor etc., and to be hyperchannel (channel) arranging and forming with the direction of the bearing of trend approximate vertical of the diffraction grating groove 6a of spectrum part 4 (diffraction grating groove 6a be set up in parallel direction) for it.In addition, with the face of spectrum part 4 opposition sides of semiconductor substrate 5a on form the light shield layer 12 that is constituted by Al or Au etc. by evaporation.
If optical detection part 5b is the CCD image sensor, so by implementing row and merge (line binning) inciding intensity information on the two-dimensional arrangements locations of pixels, thereby read the locational intensity information of its one dimension as the locational intensity information of one dimension with coming sequential (time series) property.In a word, be subjected to the capable row (line) that merges the pixel of (line binning) and become 1 passage (channel).If optical detection part 5b is PD array or CMOS image sensor, so because the intensity information that incides on the one dimension arrangement locations of pixels has been read on sequential (time series) property ground, so 1 pixel becomes 1 passage (channel).
Also have, if optical detection part 5b is under the situation of PD array or CMOS image sensor and two-dimensional arrangements pixel, the row (line) of the pixel of arranging in the one dimension orientation that parallels with the bearing of trend of the diffraction grating groove 6a of spectrum part 4 will become 1 passage (channel) so.In addition, if optical detection part 5b is the CCD image sensor, so for example the passage in the orientation (channel) be spaced apart 12.5 μ m, passage total length (being subjected to the length of the one dimension pixel column that row merges) each other are that 256 optical component is used to photodetector 5 for 1mm and the port number that is arranged.
As Fig. 2,4 and shown in Figure 5, be formed with in the orientation of passage (channel) light that is set up in parallel mutually with optical detection part 5b and passes through to the light L1 that spectrum part 4 is advanced by hole 50 at semiconductor substrate 5a.Light by hole 50 with the front 2a of substrate 2 roughly perpendicular direction extend, and be carried out by etching with the state that carries out hi-Fix with respect to optical detection part 5b and form.
Light is made of the light incident side portion 51 of the light incident opening 51a that delimit the incident of light L1 institute and the light exit side portion 52 that delimit the light outgoing peristome 52a of light L1 institute outgoing by hole 50.The form that light incident side portion 51 becomes more and more narrow with the front 2a towards substrate 2 is formed general square shape frustum shape, and has the bottom surface 51b that roughly parallels with the front 2a of substrate 2.
Light exit side portion 52 is formed the essentially rectangular post shapes with the face from spectrum part 4 sides of semiconductor substrate 5a with the bottom surface 51b form relative and that connect of light incident side portion 51, and has the perpendicular side 52b roughly with the front 2a of substrate 2.Light exit side portion 52 goes up with its width H1 (minimum widith) in the passage orientation of optical detection part 5b (with the bearing of trend of diffraction grating groove 6a perpendicular direction roughly) and forms greater than the form of the width H2 of the slit 13a of light absorbing zone 13.
In addition, between semiconductor substrate 5a and substrate 2 or light absorbing zone 13, be filled with the bottom filling material 15 that light L2 is seen through at least.At the protuberance 53 that is formed with rectangular ring on the face of substrate 2 sides of semiconductor substrate 5a with the form around light outgoing opening 52a, the bottom filling material 15 that is filled with was stopped by protuberance 53 before arriving light outgoing peristome 52a.Thus, enter into light by hole 50 because prevented bottom filling material 15, so can be owing to bottom filling material 15 refraction takes place or spread just to make light incide main part 2.In addition, on the pad parts 11a that exposes from light absorbing zone 13, fetched the outside terminal that is electrically connected photodetector 5 by the flip chip bonding by projection (thrust) 14.Pad parts 11b is electrically connected with the electrical equipment (not diagram) of outside.
Then, the manufacture method of just relevant above-mentioned spectral module 1 is explained as follows.
At first, prepare photodetector 5.For example, on the semiconductor substrate 5a that is constituted by Si, implement alkali etching by using KOH (potassium hydroxide) and TMAH (Tetramethylammonium hydroxide) etc., thereby to form the protuberance 53 of rectangular ring around the form of predetermined light outgoing opening 52a.Afterwards, prepare optical detection part 5b and distribution and electrode pad in another interarea B side.
Then, test section 5b is carried out opening to mask as benchmark and with the photoetching process of having used the double-sided alignment location on the position of regulation, thereby by implementing the light incident side portion 51 (with reference to Fig. 6) of alkali etching formation general square shape frustum shape.At this moment, for example on the semiconductor substrate 5a that is constituted by Si, thereby by implementing alkali etching forms light incident side portion 51 along (111) crystal plane that tilts about 55 ° with respect to (100) crystal plane side 51c.Then, another interarea B with respect to semiconductor substrate 5a, on the position of regulation, by using test section 5b is implemented to use the dark silicon dry etching (Deep silicon dry etching) of plasma discharge as the camera technique of benchmark, thereby formed the light exit side portion 52 (with reference to Fig. 7) of the general square shape frustum shape relative with the bottom surface 51b of light incident side portion 51.So, formed at the light that extends with the direction of the interarea A approximate vertical of semiconductor substrate 5a by hole 50.Afterwards, form light shield layer 12 by evaporating Al and Au etc. on the side 51c of an interarea A and light incident side portion 51 and bottom surface 51b, by coming cut crystal to finish photodetector 5 as benchmark test section 5b.
Then, spectrum part 4 is formed at lens section 3.Particularly, use optical resin with respect near the manifolding of the summit of lens section 3, dripping (photoetching), place the photopermeability mother matrix diffraction grating (master grating) that is carved with corresponding to the diffraction grating of diffracting layer 6.Then, under this state, make manifolding (photoetching) with optics resin solidification (sclerosis) by irradiates light, preferably be heating and curing to form the diffracting layer 6 with a plurality of diffraction grating groove 6a in order to make the optical resin stabilization by enforcement.Afterwards, peel off the mother matrix diffraction grating, by with mask evaporation such as Al or Au or comprehensively evaporation form reflection horizon 7 in the outer surface of diffracting layer 6, further again, by with MgF
2Or SiO
2Deng mask evaporation or comprehensively evaporation form passivation layer 8 in the outer surface in diffracting layer 6 and reflection horizon 7.
On the other hand, prepared substrate 2 and the light absorbing zone 13 that will have slit 13a and a peristome 13b are formed at the front 2a of substrate 2.Also have, slit 13a and peristome 13b are formed, and with respect to the outer edge that becomes the substrate 2 of benchmark portion for spectrum part 4 is positioned substrate 2, have the assigned position relation.
On light absorbing zone 13, fetch installation photodetector 5 by flip chip bonding.Then, filling bottom filling material 15 between the front 2a of photodetector 5 and substrate 2.Afterwards, by the outer edge of substrate 2 is bonded in the back 2b of substrate 2 as benchmark and by the lens 3 that optical resin agent 18 will form spectrum part 4, thereby obtain spectral module 1.Also have, at this moment, photodetector 5 is electrically connected by projection (thrust) 14 with substrate 2.
Then, the action effect of just relevant above-mentioned spectral module 1 is explained as follows.
In this spectral module 1, when the light L1 that advances to spectrum part 4 passes through hole 50 by light, only incide the light of the light exit side portion 52 that forms with the form relative with the bottom surface 51b of the light incident side portion 51 that becomes more and more narrow towards substrate 2 sides, could be from light outgoing opening 52a outgoing.At this moment, incide the parasitic light M of the bottom surface 51b of light incident side portion 51 or side 51c because be reflected to light incident opening 51a side, incide light exit side portion 52 so can suppress parasitic light.Therefore, can improve the reliability of spectral module 1.
In addition, in this spectral module 1, by implementing the disposable formation light incident side of alkali etching portion 51 with respect to the semiconductor substrate 5a of wafer state, thereby can in the preparatory process of photodetector 5, shorten operation and reduce cost.
In addition, implement dark silicon dry etching (Deep silicon dry etching) and can form light exit side portion 52 accurately by another interarea B from semiconductor substrate 5a, pass through the formation in hole 50 so can realize having stable light by the light of characteristic, and can improve the reliability of spectral module 1.Particularly, in spectral module 1, form light exit side portion 52 because of another interarea B side from configuration optical detection part 5b, so can improve the positional precision with respect to the light exit side portion 52 of a same glazing test section 5b.By light on the diffraction grating groove 6a of spectrum part 4 diffraction and the reflection of this light by the light exit side portion 52 in hole 50, and be detected at optical detection part 5b, so just can improve the reliability of spectral module 1 by the positional precision that improves light exit side portion 52 and optical detection part 5b.Have again, optical imagery takes place at optical detection part 5b in the shape of the opening section of this light exit side portion 52 (being the shape of light outgoing opening 52a), arranges the passage of optical detection part 5b corresponding to the minimum widith of the light exit side portion 52 on the semiconductor substrate 5a long side direction.For this reason, the resolution of spectral module 1 is subjected to the influence of the minimum widith of the light exit side portion 52 in the orientation of passage to a great extent.Therefore, form light exit side portion 52 accurately by implementing dark silicon dry etching (Deep silicon dry etching), thereby can suppress the deviation of the resolution between each product, and can improve the reliability of spectral module 1.
In addition, in this spectral module 1, semiconductor substrate 5a is made of the crystalline material of Si etc., and (111) crystal plane by implementing alkali etching along material forms the side, thereby just can form light incident side portion 51 accurately, so can form high-precision light by hole 50.Therefore, can improve the reliability of spectral module 1.
In addition, the resolution of spectral module 1 is subjected to the influence of the minimum widith of the slit that passes through at the direction glazing with the bearing of trend approximate vertical of diffraction grating groove 6a.For this reason, with the direction of the bearing of trend approximate vertical of diffraction grating groove 6a on, narrow down to less than the minimum widith H1 of the light on the photodetector 5 by hole 50 by the width H2 with the slit 13a of light absorbing zone 13, thereby can improve the resolution of spectral module 1.This is conducive to the raising of the reliability of spectral module 1.
Also have, as shown in Figure 8, the light that forms on the photodetector 5 by hole 60 also can be, having light exit side portion 62 with the side 62b of the bottom surface 61b approximate vertical of light incident side portion 61, to be formed the cross section be oval shape.In addition, as shown in Figure 9, also can form: than Fig. 5, light exit side portion 72 is extended in the direction (bearing of trend of diffraction grating groove 6a) with the long side direction approximate vertical of semiconductor substrate 5a, and the width of the bottom surface 71b of light incident side portion 71 equates with the width of the opening section of light exit side portion 72, that is to say that the side 72b of light exit side portion 72 directly is connected with the side 71c of light incident side portion 71.Perhaps, as shown in figure 10, also can form: than Fig. 9, light exit side portion 82 further prolongs, and the width of the opening section of light exit side portion 82 greater than with the direction of the long side direction approximate vertical of semiconductor substrate 5a on the width of bottom surface 81b of light incident side portion 81.
[the 2nd embodiment]
The difference of the spectral module 1 that the spectral module 21 that the 2nd embodiment is related and the 1st embodiment are related is that the formation of photodetector and the former are disposed at wiring substrate the front of substrate.
Shown in Figure 11,12, a plurality of terminal electrodes 23 are formed on the face with spectrum part 4 opposition sides of photodetector 22 in spectral module 21.Each terminal electrode 23 is connected with the pad parts 24a of corresponding wiring substrate 24 by lead 26.Thus, terminal electrode 23 is electrically connected with wiring substrate 24, and the electric signal that produces on optical detection part 22b is fetched to the outside by pad parts 24a and the pad parts 24b of terminal electrode 23, wiring substrate 24.
The light that forms at semiconductor substrate 22a constitutes by the light exit side portion 92 of hole 90 by the light incident side portion 91 that delimit light incident opening 91a and delimitation light outgoing opening 92a.Light incident side portion 91 has the side 91b perpendicular with the front 2a of substrate 2.Light penetrates sidepiece 92 and forms general square shape frustum shape towards the front 2a of substrate 2 with the form that its bottom broadens, and has the top 92b with the front 2a almost parallel of substrate 2.The top 92b of light incident side portion 91 and light exit side portion 92 is relative and be formed the essentially rectangular post shapes, and its side 91b then is connected in the top 92b of light exit side portion 92.In addition, the light absorbing zone 27 that is formed at substrate 2 front 2a has the slit littler than the minimum widith of light incident side portion 91 (light passes through slit) 27a in the direction with the bearing of trend approximate vertical of the diffraction grating groove 6a of spectrum part 4.
Then, the manufacture method of just relevant above-mentioned spectral module 21 is explained as follows.
At first, prepare photodetector 22.For example, on the semiconductor substrate 22a of the wafer state that is constituted by Si, prepare optical detection part 22b and distribution and electrode pad in another interarea B side.Afterwards, by with the SiO of evaporations such as Al or Au in another interarea B
2Deng dielectric film on form light shield layer 29, finish the preliminary work of photodetector 22a thus.
Then, the alkali etching by implementing to have used KOH (potassium hydroxide) and TMAH (Tetramethylammonium hydroxide) etc. or dry-etching etc. are with the protuberance 93 around the form formation rectangular ring of the light outgoing opening 92a that is scheduled to.Afterwards, with optical detection part 22b as benchmark, interarea A for semiconductor substrate 22a carries out opening to mask with the photoetching process of having used the double-sided alignment location on the position of regulation, used the alkali etching of KOH (potassium hydroxide) and TMAH (Tetramethylammonium hydroxide) to form the light exit side portion 92 of general square shape frustum shape by enforcement.Then, by for another interarea B of semiconductor substrate 22a so that test section 22b is implemented to have used the dark silicon dry etching (Deep silicon dry etching) of plasma discharge as the camera technique of benchmark in the position of regulation, thereby form the light incident side portion 91 of the essentially rectangular post shapes of the bottom surface 92b that is connected in light exit side portion 92.So, formed with the upwardly extending light in side of the interarea A approximate vertical of semiconductor substrate 22a by hole 90.Afterwards, by evaporations such as Al or Au are upward formed light shield layer 29 in side 91c and the bottom surface 91b of an interarea A and light incident side portion 91, by coming cut crystal to finish photodetector 22 as benchmark test section 22b.
Then, with the outer edge of photodetector 22 and substrate 2 or aim at telltale mark as benchmark portion, make another interarea B side of photodetector 22 be bonded in the front 2a of substrate 2 by optical resin material 17.Afterwards, connect the terminal electrode 23 of corresponding photodetector 22 and the pad parts 24a of substrate 2 by lead 26.Pad parts 24a is electrically connected on the 24b of terminal pads portion by wiring layer 19.Also have because the light absorbing zone that is made of the black resist on substrate 2 is disposed at the peripheral part of photodetector 22, so can absorbing environmental light and from spectrum part 4 can not signal reflected light, thereby can guarantee reliability.
Then, by the outer edge of substrate 2 is bonded in the back 2b of substrate 2 as benchmark portion and by the lens section 3 that optical resin agent 18 will be formed with spectrum part 4, thereby obtain spectral module 21.
The spectral module 21 related according to above-mentioned the 2nd embodiment, by the semiconductor substrate 22a of wafer state is implemented alkali etching and forms light exit side portion 92 once, thereby can in the preparatory process of photodetector 22, shorten operation and reduce cost.In addition, implement dark silicon dry etching (Deep silicon dry etching) by another interarea B from semiconductor substrate 5a, can form light exit side portion 52 accurately, have the light of stable light by characteristic by hole 50 so can form, and can improve the reliability of spectral module 1.
The present invention is not limited to above-mentioned embodiment.
For example, light incident side portion in the 1st embodiment and the shape of the light exit side portion in the 2nd embodiment are not limited to general square shape frustum shape, get final product so long as have with the bottom surface (top) of the front 2a almost parallel of substrate 2 and the shape that becomes more and more narrow towards front 2a.Equally, light exit side portion in the 1st embodiment and the shape of the light incident side portion in the 2nd embodiment are not limited to the essentially rectangular post shapes, get final product so long as have to form with the side of the front 2a approximate vertical of substrate 2 and with the form relative with the bottom surface (top) of the light incident side portion (light exit side portion) of Cheng Shuan.
In addition, light is not limited to light incident side portion and the pattern that light exit side portion directly is connected by the hole, and the pars intermedia (for example variform position of the angle of inclination of side or opening section) that connects between them also can be set.
In addition, the light incident side portion in the 1st embodiment and the light exit side portion in the 2nd embodiment are not limited to form by alkali etching, so long as the mode that is formed by various Wet-type etchings or dry-etching gets final product.Equally, light exit side portion in the 1st embodiment and the light incident side portion in the 2nd embodiment are not limited to form by dark silicon dry etching (Deep silicon dry etching), so long as the mode that is formed by various dry-etchings gets final product.
In addition, in above-mentioned the 1st embodiment, also can adopt the structure of light by the hole in the 2nd embodiment, in the 2nd embodiment, also can adopt the structure of light by the hole in the 1st embodiment.
Utilize possibility on the industry
The present invention can provide a kind of spectral module of high reliability.
Claims (4)
1. spectral module is characterized in that:
Possess:
Make the main part of light transmission;
Spectrum part, the light that the predetermined surface side from described main part is incided described main part carry out light splitting and to described predetermined surface lateral reflection;
Photodetector is configured on the described predetermined surface, and this photodetector detects the light that has carried out light splitting by described spectrum part;
Described photodetector has baseplate part, is formed with light that the light of advancing to described spectrum part passes through on this baseplate part by the hole,
Described light comprises the light incident side portion that delimit light incident opening and the light exit side portion that delimit light outgoing opening by the hole,
Described light incident side portion has with the bottom surface of described predetermined surface almost parallel and with the form that becomes more and more narrow towards described predetermined surface and forms,
Described light exit side portion has with the side of described predetermined surface approximate vertical and with the form relative with described bottom surface and forms.
2. the spectral module of putting down in writing as claim 1 is characterized in that:
Between described photodetector and described predetermined surface, be formed with light absorbing light absorbing zone,
Described light absorbing zone has light that the light of advancing by the described spectrum part of Kong Erxiang by described light passes through by slit,
With the direction of the bearing of trend approximate vertical of the diffraction grating groove that is formed on described spectrum part on, the width of described light by slit is less than the minimum widith of described light exit side portion.
3. the spectral module of putting down in writing as claim 1 is characterized in that:
Described baseplate part is made of crystalline material,
The side of described light incident side portion forms along (111) crystal plane.
4. the manufacture method of a spectral module is characterized in that:
Described spectral module possesses: the main part that makes light transmission; Spectrum part, the light that the predetermined surface side from described main part is incided described main part carry out light splitting and to described predetermined surface lateral reflection; Photodetector detects the light that has carried out light splitting by described spectrum part;
The manufacture method of described spectral module possesses following operation:
The photodetector preparatory process, preparation has the described photodetector of baseplate part, is formed with light at this baseplate part and passes through the hole;
Arrangement step, will be in described photodetector preparatory process ready described photodetector and described spectrum part be disposed at described main part;
Described photodetector preparatory process comprises: light incident side portion forms operation, implement Wet-type etching by the interarea side from described baseplate part, to have and the bottom surface of a described interarea almost parallel and the form that becomes more and more narrow towards another interarea, form and delimit described light by the light incident side portion of the light incident opening in hole; Light exit side portion forms operation, after described light incident side portion forms operation, implement dry-etching by another interarea side from described baseplate part, to have and the side of a described interarea approximate vertical and the form relative with described bottom surface, form and delimit described light by the light exit side portion of the light outgoing opening in hole.
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| JP2008311087A JP5207938B2 (en) | 2008-05-15 | 2008-12-05 | Spectroscopic module and method for manufacturing spectral module |
| JP2008-311087 | 2008-12-05 | ||
| PCT/JP2009/058639 WO2009139322A1 (en) | 2008-05-15 | 2009-05-07 | Spectral module and method for manufacturing spectral module |
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Also Published As
| Publication number | Publication date |
|---|---|
| US8604412B2 (en) | 2013-12-10 |
| EP2287577B1 (en) | 2020-12-09 |
| US20130329225A1 (en) | 2013-12-12 |
| KR101617473B1 (en) | 2016-05-02 |
| CN102027342A (en) | 2011-04-20 |
| JP2009300424A (en) | 2009-12-24 |
| EP2287577A1 (en) | 2011-02-23 |
| JP5207938B2 (en) | 2013-06-12 |
| CN103383284A (en) | 2013-11-06 |
| US20110075143A1 (en) | 2011-03-31 |
| EP2287577A4 (en) | 2015-03-18 |
| CN103383284B (en) | 2016-02-10 |
| US8742320B2 (en) | 2014-06-03 |
| KR20110008155A (en) | 2011-01-26 |
| WO2009139322A1 (en) | 2009-11-19 |
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