CN101894824B - Bearing structure of electronic component and preparation method thereof - Google Patents

Bearing structure of electronic component and preparation method thereof Download PDF

Info

Publication number
CN101894824B
CN101894824B CN200910203568.2A CN200910203568A CN101894824B CN 101894824 B CN101894824 B CN 101894824B CN 200910203568 A CN200910203568 A CN 200910203568A CN 101894824 B CN101894824 B CN 101894824B
Authority
CN
China
Prior art keywords
supporting body
insulated circuit
side arm
interface layer
electronic component
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN200910203568.2A
Other languages
Chinese (zh)
Other versions
CN101894824A (en
Inventor
江振丰
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Guanghong Precision Co Ltd
Original Assignee
Guanghong Precision Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Guanghong Precision Co Ltd filed Critical Guanghong Precision Co Ltd
Priority to CN200910203568.2A priority Critical patent/CN101894824B/en
Publication of CN101894824A publication Critical patent/CN101894824A/en
Application granted granted Critical
Publication of CN101894824B publication Critical patent/CN101894824B/en
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Abstract

The invention discloses a bearing structure of an electronic component, comprising a bearing body, an interface layer, an insulation circuit and a metal layer, wherein the bearing body is formed by ejecting plastic; a reflection cup is formed on the bearing body; after the bearing is etched, catalyzed and activated, metal nickel or copper is deposited on the surface of the bearing body by no-electrolysis electroplating or a chemical method to form the interface layer; then, laser is used for stripping the local interface layer to form a local insulation circuit; next, metal layers made of copper, nickel, silver or gold, and the like are electroplated on the interface layer; and then the plastic bearing structure of the high-reflection conductor metal is completed.

Description

Bearing structure of electronic component and preparation method thereof
Technical field
The present invention relates to electronic component or lead frame technology of preparing, particularly refer to the bearing structure of the high reflection of a kind of tool conductor metal.
Background technology
Existing LED conducting wire frame, general tablet of take conductive material is main (as: copper, copper alloy or aluminium etc.), through punching press, form the stock of lead frame, subsequently with electroplating processes, the metal level (as tin, silver, gold etc.) at lead frame stock electroplating surface one deck with high conductivity, utilize subsequently embedded plastic ejection forming technique (Insert Molding), form the LED conducting wire frame of cup-shaped, but the reflector space of this cup-shaped lead frame cannot effectively provide the reflecting effect of metal level.
In addition, also have with laser direct activation (Laser Direct Structuring, LDS) processing procedure is applied on the lead frame of light-emitting diode, this processing procedure shortcoming is for needing to use laser direct activation processing procedure proprietary material, after this material penetrates, its electrode and reflector space are used laser to carry out surface active, because laser can make surface roughening, and the area of laser is excessive, on inclined-plane, because of its laser, there are the restrictions such as angle and processing procedure time, and the roughness after laser activation can cause its original reflection angle designing and reflecting brightness difference to some extent, separately, 3D stereo laser process equipment is expensive, process time is oversize, cost is too high.
Moreover, those existing also has in addition with low temperature co-fired multi-layer ceramics (Low-Temperature Co-firedCeramics, LTCC), because pottery is similar with the material of silicon, can be connected with chip, its heat conduction and heat-resistance coefficient are all fine, but it need carry out sintering in the temperature of 900 degree left and right low temperature co-fired multi-layer ceramics, and it has the phenomenon that shrinkage is different, easily increases electrical variable, and ceramic processing cost is expensive, a large amount of production costs decline and are difficult for.
Similar techniques also has Taiwan new patent numbering M285037 at present, patent name is package structure for LED, this patent content is for utilizing ejection formation, use vacuum mode to carry out metal level deposition, with laser, form insulated circuit subsequently, this processing procedure mode is because used vacuum equipment, therefore (system price, using rate of metal etc.) have its restriction aspect cost, and the formed rete of vacuum moulding machine thinner (Thin-Film), in reflectivity and conductivity, effect is limited.
In this, the present invention is the problem further investigated for the conductor of aforementioned existing electronic component, actively seek solution, and then successfully develop the bearing structure of electronic component, with this solve that the supporting body processing procedure of existing electronic component is complicated, the inconvenience that problem was caused and the puzzlement such as reflection efficiency and heat conduction, conduction.
Summary of the invention
Main purpose of the present invention is to provide the plastic electronic component structure of a kind of reflection or conductor metal layer, promotes reflection efficiency or conduction efficiency, and can freely design trickle circuit and insulated circuit pattern with this.
An of the present invention object is to provide the electronic component structure of the high reflection of a kind of tool conductor metal layer, simplifies processing procedure, and can make in a large number, to reduce its cost of manufacture with this.
Can reach foregoing invention first and implement the bearing structure of object electronic component, include:
Supporting body;
Interface layer, is deposited on the surface of supporting body with electroless plating;
Insulated circuit, with the local interface layer of laser lift-off supporting body upper surface, side surface and lower surface to form required circuit and insulated circuit;
Metal level, with electroplate or chemical method deposited conductor metal on boundary layer.
Can reach foregoing invention second and implement the bearing structure of object electronic component, include:
Supporting body, its surface has bearing structure, and at least one side extends to form at least one side arm;
Interface layer, is deposited on the surface of supporting body with electroless plating;
Insulated circuit, with the local interface layer of laser lift-off supporting body upper surface and lower surface to form required circuit and insulated circuit;
Metal level, with electroplate or chemical method deposited conductor metal on boundary layer.
The preparation method of bearing structure, its step includes:
Plastic injection step, provides at least one side to extend to form the supporting body of at least one side arm;
Electroless plating step forms interface layer on this supporting body and side arm, and covers this supporting body and side arm;
Laser isolation step, forms front insulated circuit, back side insulated circuit in the interface layer of this supporting body and side arm;
Plating step forms metal level in this interface layer;
Segmentation procedure, cuts apart to form bearing structure by side arm, and completes the making of this plastic electronic component structure.
The present invention compared with prior art, tool has the following advantages: the difficulty that has processing aspect for superfine micro-circuit, the present invention can be for the technology of superfine micro-circuit, adopt laser to carry out peel off (ablation) of local interface layer 2, can reach and freely design and processing procedure is simple and easy and diversified production procedure.
Accompanying drawing explanation
Fig. 1 is the supporting body schematic appearance of first embodiment of the invention;
Fig. 2 forms the schematic diagram after interface layer on the supporting body of the first embodiment;
Fig. 3 is the schematic diagram that the interface layer of the supporting body Shang Biao Mian With side surface of the first embodiment forms insulated circuit;
Fig. 4 is the schematic diagram that the interface layer of the supporting body Xia Biao Mian With side surface of the first embodiment forms insulated circuit;
Fig. 5 forms the schematic diagram of metal level in the interface layer of the first embodiment, complete the schematic diagram that this electronic component structure is made simultaneously;
Fig. 6 is the supporting body schematic appearance of second embodiment of the invention;
Fig. 7 forms the schematic diagram after interface layer on the supporting body of the second embodiment;
Fig. 8 is the schematic diagram that the supporting body of the second embodiment and the interface layer of side arm upper surface form front insulated circuit;
Fig. 9 is the schematic diagram that the supporting body of the second embodiment and the interface layer of side arm lower surface form back side insulated circuit;
Figure 10 forms the schematic diagram of metal level on the interface layer of the second embodiment and reflection graphic patterns;
Figure 11 has been the schematic diagram that this electronic component structure of the second embodiment is made;
Figure 12 is the schematic diagram of its front insulated circuit of single side arm;
Figure 13 is the schematic diagram of its front insulated circuit of many side arms;
Figure 14 is the schematic diagram of its back side insulated circuit of many side arms;
Figure 15 is its first preparation flow block schematic diagram of electronic component of the present invention;
Figure 16 is its second preparation flow block schematic diagram of electronic component of the present invention.
Embodiment
Below in conjunction with the drawings and specific embodiments, content of the present invention is described in further details.
Embodiment:
The second embodiment that refers to the first embodiment, Fig. 6 to Figure 11 of Fig. 1 to Fig. 5, the bearing structure of electronic component provided by the present invention, mainly includes: supporting body 1, interface layer 2, insulated circuit 3 and metal level 4 form.
This supporting body 1, by unitary plastic ejection formation, in the first embodiment of Fig. 1, its supporting body 1 nothing is extended side arm, and in the second embodiment of Fig. 6, at least one side of its supporting body 1 extends to form at least one side arm 11; Wherein down sloping reflector 12 is to form reflector 13 in surface for this supporting body 1, and this supporting body 1 surface is between 15 degree ~ 85 are spent with the angle that reflecting surface 12 defines; Wherein this supporting body 1 mixes in advance the plastics of metal solvent or comprises that to mix in advance organic plastics obtained for comprising, and takes second place, and supporting body 1 is carried out to surface etching or sandblast, and the activation step before electroless plating processing procedure; Or this supporting body 1 is for without mixing the plastics of metal solvent or obtained without mixing organic plastics, take second place, the method that supporting body 1 after its moulding re-uses preimpregnation (Pre-Dip), chemical etching or sandblast makes surface roughening, another it, in supporting body 1 surface, impose catalyst again, finally carry out again the activation step before electroless plating processing procedure;
Interface layer 2, is deposited on the surface of supporting body 1 with electroless plating, the supporting body 1 wherein activating via catalyst is transferred to after electroless plating processing procedure, can be on the surface of supporting body to form one deck chemical nickel or copper metal interface layer 2, as shown in Fig. 2 or Fig. 7;
Insulated circuit 3, with the local interface layer 2 of laser lift-off to form required insulated circuit 3; In the first embodiment, laser is peeled off the local interface layer 2 of supporting body 1 upper surface, side surface and lower surface, makes to form extended loop around the insulated circuit 3 of supporting body 1, as shown in Figure 3 and Figure 4 on supporting body 1; In a second embodiment with the local interface layer 2 of laser lift-off to form required front insulated circuit 31, back side insulated circuit 32, as shown in Fig. 8 and Fig. 9, this front insulated circuit 31 and back side insulated circuit 32 are for the interface layer 2 by laser lift-off supporting body 1 surface the edge that extends beyond supporting body 1 are in the surf zone of side arm 11; Be illustrated in figure 8 the schematic diagram of two side arm 11 its front insulated circuits 31, be the schematic diagram of single side arm 11 its front insulated circuits 31 as shown in figure 12, as Figure 13 and the schematic diagram that Figure 14 shows that many side arm 11 its front insulated circuits 31 and back side insulated circuit 32, wherein this laser is mainly carbon dioxide (CO 2) laser, the refined chromium of rubidium (Nd:YAG) laser, Nd-doped yttrium vanadate crystal (Nd:YVO 4) the electronic laser bundle such as laser, quasi-molecule (EXCIMER) laser, its wavelength is to be selected from 248nm, 308nm, 355nm, 532nm, 1064nm or 10600nm;
Metal level 4, with electroplate or chemical deposition conductor metal in interface layer 2, wherein the metal level 4 of this plating or chemical deposition can be selected from copper, nickel, silver, gold, chromium, any one of the group that chemical replacement gold etc. forms forms, this metal level 4 also can improve the reflectivity of reflector 13, and then form a kind of plastic electronic component structure that can freely design conducting wire and metal level 4, luminous element lead frame with this technology made, there is unlimited number, can freely design reflecting surface 12 shapes of supporting body 1, also can be for many luminous elements side by side, the present invention utilizes the high usage of plating or chemical deposition to deposit interface layer 2 and metal level 4, have and reduce costs and excellent Electronic Performance can be provided, and high reflection, the advantage of high heat-conducting area characteristic,
Wherein, the supporting body 1 of unitary plastic ejection formation is with the interface layer 2 of electroless plating nickel deposited or copper metal, also recycle laser by the interior formation insulated circuit 3 of reflector 13 thereafter, so that local interface layer 2 is peeled off, again with plating or chemical deposition conductor metal be deposited on interface layer 2 in to form metal level 4 thereafter, like this complete insulated circuit 3 extended loops around the bearing structure of supporting body 1, as shown in Figure 5; If supporting body 1 has side arm 11, finally again via segmentation procedure by side arm 11 cutting apart, cutting or the separated supporting body 1 of punching mode, make side arm 11 and the face that sticks together 16, the front insulated circuit 31 of supporting body 1 with back side insulated circuit 32, supporting body 1 be separated and form positive pole 14 and negative pole 15, reflector 13 is separated to formation anodal 14 and negative pole 15 to form bearing structure, as shown in figure 11 simultaneously.
The preparation method's of plastic electronic component structure of the present invention preferred embodiment, it is as shown in Figure 15 and Figure 16, it sequentially comprises the steps such as plastic injection step S1, electroless plating step S2, laser isolation step S3, plating step S4 and segmentation procedure S5, to complete the making of the bearing structure of aforementioned electronic element, the present invention is defined as SPL process (Single-shot Plating and Laser) processing procedure by this preparation method:
Plastic injection step S1, provide at least one supporting body 1 or at least one side to extend to form the supporting body 1 that has a side arm 11 at least, this supporting body 1 is by plastics or the emitted moulding of polymeric liquid crystal copolymer material, and wherein these plastics are mainly PA (Polyamide), polybutylene terephthalate (PBT), PET, LCP, PC, ABS, PC/ABS etc.;
And wherein this supporting body 1 mixes in advance the plastics of metal solvent or comprises that to mix in advance organic plastics obtained for comprising, and this metal solvent or organic substance mainly comprise palladium, copper, silver, iron etc.; Or this supporting body 1 is for without mixing the plastics of metal solvent or obtained without mixing organic plastics.
Electroless plating step S2 forms interface layer 2 on this supporting body 1, and covers this supporting body 1, after aforementioned plastic injection step S1, produces the supporting body 1 of electronic component stock; This supporting body 1 as mix in advance the plastics of metal solvent or comprise that to mix in advance organic plastics obtained for comprising, take second place, by etching or blasting treatment and activation processing before electroless plating, allow supporting body 1 surface deposition chemical nickel or copper metal interface layer 2.This supporting body 1 as for without mixing the plastics of metal solvent or obtained without mixing organic plastics, take second place, can pass through electroless plating pre-treatment, use the method for preimpregnation (Pre-Dip), chemical etching or sandblast to make surface roughening, another it, supporting body 1 surface imposes catalystization and finally carries out activation step again, enters electroless plating, to allow supporting body 1 surface deposition chemical nickel or copper metal; As shown in figure 15, for using the method for chemical etching or sandblast to make surface roughening; And shown in Figure 16, for using the method for preimpregnation, chemical etching or sandblast to make surface roughening.
Laser isolation step S3, forms insulated circuit 3 in this interface layer 2; When supporting body 1, without 11 of side arms, with laser, in the local interface layer 2 of upper surface, side surface and lower surface, peel off, make to form extended loop around the insulated circuit 3 of supporting body 1, as shown in Figure 3 and Figure 4 on supporting body 1; When at least one side of supporting body 1 extends to form at least one side arm 11, in interface layer 2, form front insulated circuits 31, back side insulated circuit 32, this front insulated circuit 31 and back side insulated circuit 32 are for the interface layer 2 by laser lift-off supporting body 1 surface the edge that extends beyond supporting body 1 are in the surf zone of side arm 11; It is to establish after deposition in the plating that completes interface layer 2, the present invention is for forming imperceptible insulated circuit 3, be adopt that laser carries out local interface layer 2 peel off to form insulated circuit 3, to reach the simple and easy and diversified production procedure of free design, circuit granular and processing procedure, it utilizes electronic laser bundle (Laser Beam) that local interface layer 2 in interior insulated circuit 3 patterns that form according to design requirement institute wish of reflector 13 is peeled off, and this laser is mainly carbon dioxide (CO 2) laser, the refined chromium of rubidium (Nd:YAG) laser, Nd-doped yttrium vanadate (Nd:YVO4) crystal laser, quasi-molecule (Excimer) laser etc. selects, subsequently and can be according to demand in forming in the interface layer 2 of insulated circuit 3.
Plating step S4, forms metal level 4 in this interface layer 2, and completes the making of this electronic component structure; For utilizing any one formed electroplating bath processing procedure depositing metal layers 4 of the group that plating and chemical depositing copper, nickel, silver, gold, chromium, chemical replacement gold etc. form, and formed part will be sticked together the use with routing as luminescence chip, and can improve reflectivity and conductor, so can complete the bearing structure without the electronic component of side arm 11 supporting bodies 1.
Segmentation procedure S5, if supporting body 1 has side arm, 11 The are cut apart side arm 11, the face that sticks together 16, front insulated circuit 31 that makes 1 of side arm 11 and supporting body and back side insulated circuit 32 by supporting body 1 separate form anodal 14 with negative pole 15 to form bearing structure.
The present invention penetrates formed plastics supporting body 1, not only for light-emitting diode chip for backlight unit adhesion, routing then, reflector 13 structures, metal level 4 depositions, SMD sticks together and laser lift-off forms insulated circuit 3, more can link metal level 4 with reflector 13 and form the related application such as large area radiator structure, this innovative design has the advantages that to improve production cost and freely design.
Above-listed detailed description is for the illustrating of possible embodiments of the present invention, and this embodiment is not in order to limit the scope of the claims of the present invention, and the equivalence that all the present invention of disengaging do is implemented or change, all should be contained in the scope of the claims of this case.

Claims (5)

1. a bearing structure for electronic component, is characterized in that: include
Supporting body, its at least one side extends to form at least one side arm;
Interface layer, is deposited on the surface of supporting body and side arm with electroless plating;
Insulated circuit, on described supporting body, form described interface layer with the local interface layer of the local interface layer of supporting body upper surface and lower surface described in laser lift-off and the upper surface of described side arm and lower surface to form a front insulated circuit on described supporting body and side arm, and the two ends of described front insulated circuit are the surf zones being positioned on described side arm, and on described supporting body and side arm, form a back side insulated circuit of corresponding described front insulated circuit, and the two ends of described back side insulated circuit are the lower surface area that is positioned at described side arm;
Metal level, with electroplate or chemical method deposited conductor metal in interface layer, and the described side arm of described supporting body is cut apart, by adhesive between described side arm and described supporting body, described front insulated circuit and described back side insulated circuit, so that being separated, described supporting body forms positive pole and negative pole, wherein said front insulated circuit is not connected with the two ends of described back side insulated circuit, and is not connected each other.
2. a preparation method for the bearing structure of electronic component, is characterized in that, its step includes:
Plastic injection step, provides at least one side to extend to form the supporting body of at least one side arm;
Electroless plating step forms interface layer on this supporting body and side arm, and covers this supporting body and side arm , And and form one deck chemical nickel or copper metal interface layer in the supporting body surface activating;
Laser isolation step, in the upper surface of this supporting body and side arm and the local interface layer of lower surface, peel off formation front insulated circuit, back side insulated circuit, by the interface layer on laser lift-off supporting body surface the edge that extends beyond supporting body in the surf zone of side arm to form front insulated circuit and back side insulated circuit, the two ends of wherein said front insulated circuit are the surf zones being positioned on described side arm, and the two ends of described back side insulated circuit are the lower surface area that is positioned at described side arm;
Plating step forms metal level in this interface layer;
Segmentation procedure, side arm is cut apart, make the face that sticks together, front insulated circuit and back side insulated circuit between side arm and supporting body that supporting body is separated and forms positive pole and negative pole, and complete the making of this plastic electronic structure, wherein said front insulated circuit is not connected with the two ends of described back side insulated circuit, and is not connected each other.
3. the preparation method of the bearing structure of electronic component as claimed in claim 2, is characterized in that: described in
Supporting body comprises the surface roughening that uses preimpregnation, chemical etching or sandblast to make supporting body, carries out thereafter the activation step before electroless plating processing procedure again.
4. the preparation method of the bearing structure of electronic component as claimed in claim 2, is characterized in that: described supporting body is for mixing without plastics or the nothing of mixing metal solvent the supporting body that organic plastics form.
5. the preparation method of the bearing structure of electronic component as claimed in claim 4, is characterized in that: described in
Supporting body comprises that use preimpregnation, chemical etching or sandblast make the surface roughening of supporting body, then imposes catalyst, carries out thereafter the activation step before electroless plating processing procedure again.
CN200910203568.2A 2009-05-18 2009-05-18 Bearing structure of electronic component and preparation method thereof Expired - Fee Related CN101894824B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN200910203568.2A CN101894824B (en) 2009-05-18 2009-05-18 Bearing structure of electronic component and preparation method thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN200910203568.2A CN101894824B (en) 2009-05-18 2009-05-18 Bearing structure of electronic component and preparation method thereof

Publications (2)

Publication Number Publication Date
CN101894824A CN101894824A (en) 2010-11-24
CN101894824B true CN101894824B (en) 2014-02-19

Family

ID=43103968

Family Applications (1)

Application Number Title Priority Date Filing Date
CN200910203568.2A Expired - Fee Related CN101894824B (en) 2009-05-18 2009-05-18 Bearing structure of electronic component and preparation method thereof

Country Status (1)

Country Link
CN (1) CN101894824B (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103220884A (en) * 2012-01-18 2013-07-24 光宏精密股份有限公司 Line substrate structure and manufacturing method thereof
CN105092662B (en) * 2014-05-20 2019-01-22 光宏精密股份有限公司 Electrochemical sensing test piece and its manufacturing method

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6407411B1 (en) * 2000-04-13 2002-06-18 General Electric Company Led lead frame assembly
CN1700481A (en) * 2004-05-18 2005-11-23 亿光电子工业股份有限公司 Packaging structure and method of LED
CN1757108A (en) * 2003-02-28 2006-04-05 奥斯兰姆奥普托普导体有限责任公司 Optoelectronic device with patterned-metallized package body, method for producing such a device and method for the patterned metallization of a plastic-containing body
CN2840330Y (en) * 2005-05-30 2006-11-22 亿光电子工业股份有限公司 Light-emitting diode package structure

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6407411B1 (en) * 2000-04-13 2002-06-18 General Electric Company Led lead frame assembly
CN1757108A (en) * 2003-02-28 2006-04-05 奥斯兰姆奥普托普导体有限责任公司 Optoelectronic device with patterned-metallized package body, method for producing such a device and method for the patterned metallization of a plastic-containing body
CN1700481A (en) * 2004-05-18 2005-11-23 亿光电子工业股份有限公司 Packaging structure and method of LED
CN2840330Y (en) * 2005-05-30 2006-11-22 亿光电子工业股份有限公司 Light-emitting diode package structure

Also Published As

Publication number Publication date
CN101894824A (en) 2010-11-24

Similar Documents

Publication Publication Date Title
JP7127083B2 (en) Application specific electronics packaging system, method and device
CN100461989C (en) Wiring transfer sheet material and producing method thereof, wiring substrate and producing method thereof
US9504165B2 (en) Method of forming conductive traces on insulated substrate
US20100307799A1 (en) Carrier Structure for Electronic Components and Fabrication Method of the same
CN101624715A (en) Process flow for selective thick-gold electroplating without gold plated lead
WO2011041934A1 (en) Semiconductor carrier structure
CN101894824B (en) Bearing structure of electronic component and preparation method thereof
CN201413834Y (en) Bearing structure for electronic components
US20100294538A1 (en) Plastic Lead Frame with Reflection and Conduction Metal Layer and Fabrication Method of the Same
CN101901794B (en) Plastic lead frame structure with reflective and conductor metal layer and preparation method thereof
CN201408755Y (en) Structure of plastic lead frame with reflecting layer and conductor metal layer
CN201508853U (en) Semiconductor bearing structure
TWI429115B (en) Semiconductor bearing structure
JP3153009U (en) Load structure of electronic elements
CN104582278B (en) A kind of circuit board and preparation method thereof
CN210469874U (en) Circuit board based on laser drilling carbonization conductive direct metallization hole
TWM368893U (en) Plastic lead frame structure with reflective and conductor metal layer
JP3155420U (en) Plastic lead frame structure with reflectivity and conductive metal layer
CN202084575U (en) Large-power LED (Light-emitting Diode) packaging substrate
JP2019526168A (en) Molded interconnect device and method of making the same
TWM368894U (en) Supporting structure of electronic elements
TWI409915B (en) The bearing structure of electronic component and its preparation method
TW201037807A (en) Plastic lead frame structure with reflective and conductive metal layer and its manufacturing method
CN113015339A (en) Manufacturing method of embedded ceramic circuit board and embedded ceramic circuit board
TWI299969B (en)

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20140219

CF01 Termination of patent right due to non-payment of annual fee