CN101887881B - Interconnecting assembly, manufacture method and repairing method thereof - Google Patents
Interconnecting assembly, manufacture method and repairing method thereof Download PDFInfo
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- CN101887881B CN101887881B CN2009100514004A CN200910051400A CN101887881B CN 101887881 B CN101887881 B CN 101887881B CN 2009100514004 A CN2009100514004 A CN 2009100514004A CN 200910051400 A CN200910051400 A CN 200910051400A CN 101887881 B CN101887881 B CN 101887881B
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Abstract
The invention discloses an interconnecting assembly, a manufacture method and a repairing method thereof, wherein the interconnecting assembly comprises a substrate, a first conducting layer, a second conducting layer, an insulating layer, an interconnecting layer and a repairing structure, wherein the first conducting layer is positioned on the upper surface of a first area of the substrate; the second conducting layer is positioned on the upper surface of a second area of the substrate; the insulating layer covers the first conducting layer; the interconnecting layer conductively interconnects the first conducting layer and the second conducting layer through a contact hole on the first conducting layer and a contact hole on the second conducting layer; and the repairing structure is a conducting layer and positioned above the first conducting layer and/or the second conducting layer. The interconnecting assembly solves the problem that the interconnecting assembly is more difficult to repair when the interconnecting assembly has an open circuit or the interconnecting assembly is damaged in a repairing process.
Description
Technical field
The present invention relates to technical field of manufacturing semiconductors, particularly a kind of interconnecting assembly, its manufacturing approach and restorative procedure thereof.
Background technology
Usually the structure of semiconductor device is a sandwich construction, and different layers need electrically connect sometimes, therefore in the manufacturing of semiconductor device; For the conductive layer with different layers electrically connects; Need on each conductive layer, form the contact hole that is communicated with, form conductive interconnection layer then, said conductive interconnection layer covers said contact hole; Thereby the conductive layer of different layers is electrically connected, and the structure that electrically connects in the said semiconductor device is called interconnecting assembly.
Fig. 1 a is a kind of sketch map of existing interconnecting assembly, and Fig. 1 b is the generalized section of Fig. 1 a along A-A ' direction.With reference to figure 1a and Fig. 1 b; Said interconnecting assembly comprises first conductive layer 11 that is positioned at said substrate 10 first areas, second conductive layer 12 that is positioned at said substrate 10 second areas; And first insulating barrier 13 between first conductive layer 11 and second conductive layer 12, wherein first conductive layer 11 and second conductive layer 11 are not positioned at same one deck.Shown in Fig. 1 b, in manufacture process, form first conductive layer 11 usually earlier in the first area of substrate; Then the last layer at first conductive layer 11 forms first insulating barrier 13; Then on the first corresponding insulating barrier 13 of the second area of semiconductor device, form second conductive layer 12; Then on second conductive layer 12 and first insulating barrier 13, form second insulating barrier 14.For first conductive layer 11 and second conductive layer 12 are electrically connected, then will form the first contact hole 15a to first insulating barrier 13 on first conductive layer 11 and second insulating barrier, 14 etchings; Then second insulating barrier 14 on second conductive layer 12 is carried out etching, form the second contact hole 15b; Then form the conductive interconnection layer 16 that covers the first contact hole 15a and the second contact hole 15b and second insulating barrier 14; For example the material of conductive interconnection layer 16 can be metal material or ITO (tin indium oxide) material, has so just formed the said interconnecting assembly that is made up of first conductive layer 11, second conductive layer 12 and conductive interconnection layer 16.
Above-mentioned interconnecting assembly receives the influence of manufacturing process, several kinds of situation below for example existing:
The first, if the position of the corresponding contact hole 15b of the corresponding contact hole 15a of first conductive layer 11 or second conductive layer 12 is corroded; Perhaps in the process that forms contact hole 15a and 15b, over etching occurs during to first conductive layer 11 or second conductive layer, 12 etchings, all possibly making wins opens circuit between conductive layer 11 and second conductive layer 12 and the conductive interconnection layer 16.
The second, if conductive interconnection layer 16 for example ITO in the process of filling contact hole because the bad generation film of quality of forming film splits, make between the conductive interconnection layer 16 to produce fracture, win conductive layer 11 and second conductive layer 12 are opened circuit.
The 3rd; If the time to first conductive layer 11 or second conductive layer, 12 etchings; The angle at the edge after the etching does not reach requirement, thereby possibly make that spreadability is bad when contact hole forms conductive interconnection layer 16, thereby win conductive layer 11 and second conductive layer 12 are opened circuit.
The 4th, if in the manufacturing process of postorder, the static of generation can not well be released, and also possibly make the conductive interconnection layer 16 of contact hole 15a and 15b position burnt by static or wounds, thereby win conductive layer 11 and second conductive layer 12 are opened circuit.
Therefore adopt the semiconductor device of above-mentioned interconnecting assembly to occur the phenomenon that opens circuit between first conductive layer 11 and second conductive layer 12 easily, and after occurring opening circuit, often be difficult to repair, perhaps the process in reparation causes damage to interconnecting assembly.
Summary of the invention
The purpose of this invention is to provide a kind of interconnecting assembly, its manufacturing approach and restorative procedure thereof, solved when opening circuit appears in interconnecting assembly the difficult problem of repairing or in the process of repairing interconnecting assembly being caused damage.
The invention provides a kind of interconnecting assembly, comprising: substrate; First conductive layer is positioned at the first area upper surface of said substrate; Second conductive layer is positioned at the second area upper surface of said substrate; Insulating barrier covers said first conductive layer; Interconnection layer is through said first conductive layer of the contact hole conductive interconnection on the contact hole on first conductive layer and second conductive layer and said second conductive layer; Also comprise repair structure, said repair structure is a conductive layer, is positioned at said first conductive layer and/or second conductive layer top.
Preferably; Said repair structure be said interconnection layer in the extension above said first conductive layer and/or the extension of said interconnection layer above said second conductive layer, and said interconnection layer links to each other with the extension conduction of said interconnection layer above said second conductive layer in the extension above said first conductive layer.
Preferably, said interconnection layer extends along first conductive layer and the second conductive layer direction, and said interconnection layer is a rectangular configuration.
Accordingly, the present invention also provides a kind of interconnecting assembly, comprising: substrate; First conductive layer is positioned at the first area upper surface of said substrate; Second conductive layer is positioned at the second area upper surface of said substrate; Insulating barrier covers said first conductive layer; Interconnection layer is through said first conductive layer of the contact hole conductive interconnection on the contact hole on first conductive layer and second conductive layer and said second conductive layer; Also comprise repair structure; Said repair structure is an electric conducting material; Be positioned on the 3rd zone of said substrate; Said repair structure comprise first conductive layer to extension and second conductive layer in the 3rd zone to the extension in the 3rd zone, said first conductive layer is laminated construction to the extension in the 3rd zone in the 3rd zone to the extension and second conductive layer in the 3rd zone.
Preferably, have through hole in first conductive layer in the said laminated construction and/or second conductive layer, said through hole exposes first conductive layer in the said laminated construction and/or second conductive layer.
Preferably, said first conductive layer extends to the contact hole position on said second conductive layer, said first conductive layer of the contact hole position on second conductive layer and the part that said second conductive layer constitutes repair structure of extending to.
Preferably, said second conductive layer extends to the contact hole position on said first conductive layer, said second conductive layer of the contact hole position on first conductive layer and the part that said first conductive layer constitutes repair structure of extending to.
Preferably, said shape of through holes is circular, square or oval.
Preferably; Said repair structure also comprises said interconnection layer in the extension above said first conductive layer and/or the extension of said interconnection layer above said second conductive layer, and said interconnection layer links to each other with the extension conduction of said interconnection layer above said second conductive layer in the extension above said first conductive layer.
Preferably, said interconnection layer extends along first conductive layer and the second conductive layer direction, and said interconnection layer is a rectangular configuration.
Accordingly, the present invention also provides a kind of manufacturing approach of interconnecting assembly, comprises step: substrate is provided; On the first area of said substrate, form first conductive layer, said first conductive layer is carried out etching forming required pattern, and form the insulating barrier of first conductive layer; On the second area of said substrate, form second conductive layer, said second conductive layer is carried out etching forming required pattern, and form the insulating barrier of second conductive layer; Form first contact hole in the insulating barrier on said first conductive layer, form second contact hole in the insulating barrier on said second conductive layer; In first contact hole and second contact hole, form interconnection layer, said interconnection layer is filled in said first contact hole and second contact hole, and makes the win conductive layer and the second conductive layer conductive interconnection.
Preferably, also comprise step: repair structure is carried out etching, form through hole, said through hole exposes first conductive layer and/or second conductive layer of said repair structure.
Accordingly, the present invention also provides a kind of manufacturing approach of interconnecting assembly, comprises step: substrate is provided; On the first area of said substrate, form first conductive layer, and on the 3rd zone, form the extended structure of first conductive layer, form the insulating barrier of first conductive layer then; On the second area of said substrate, form second conductive layer; And on the 3rd zone, form the extended structure of second conductive layer; Form the insulating barrier of second conductive layer then, and the extended structure of the extended structure of second conductive layer and first conductive layer is a laminated construction; Form first contact hole in the insulating barrier on said first conductive layer, form second contact hole in the insulating barrier on said second conductive layer; In first contact hole and second contact hole, form interconnection layer, said interconnection layer is filled in the said contact hole, and makes the win conductive layer and the second conductive layer conductive interconnection.
Preferably, also comprise step: to the repair structure etching, form through hole, said through hole exposes first conductive layer and/or second conductive layer of said repair structure.
Corresponding the present invention also provides a kind of restorative procedure of interconnecting assembly; Comprise step: utilize laser that the said repair structure place of first area is carried out laser welding, make extension and the first conductive layer laser welding of interconnection layer above said first conductive layer; Utilize laser that the repair structure place of second area is carried out laser welding, make extension and the second conductive layer laser welding of interconnection layer above said second conductive layer.
Corresponding the present invention also provides a kind of restorative procedure of interconnecting assembly, and comprise step: the lamination place to first conductive layer and second conductive layer carries out laser welding, and first conductive layer and second conductive layer are electrically connected.
Technique scheme; Through in interconnecting assembly, forming repair structure; Thereby during the phenomenon that opening circuit between first conductive layer and second conductive layer appears in the semiconductor device that make to adopt above-mentioned interconnecting assembly; Can be connected with second conductive layer first conductive layer through repair structure, make first conductive layer and the second conductive layer conductive interconnection, thereby realize the reparation when opening circuit between first conductive layer and second conductive layer; And the process of repairing do not damage interconnecting assembly, and realization easy and simple to handle, easy.
Description of drawings
Through the more specifically explanation of the preferred embodiments of the present invention shown in the accompanying drawing, above-mentioned and other purpose, characteristic and advantage of the present invention will be more clear.Reference numeral identical in whole accompanying drawings is indicated identical part.Painstakingly do not draw accompanying drawing, focus on illustrating purport of the present invention by actual size equal proportion convergent-divergent.
Fig. 1 a is a kind of sketch map of existing interconnecting assembly;
Fig. 1 b is the generalized section of Fig. 1 a along A-A ' direction;
Fig. 2 is the sketch map of interconnecting assembly first embodiment of the present invention;
Fig. 3 is the sketch map of interconnecting assembly second embodiment of the present invention;
Fig. 4 is the reparation sketch map of interconnecting assembly shown in Figure 3;
Fig. 5 is the sketch map of interconnecting assembly embodiment of the present invention;
Fig. 6 is the reparation sketch map of interconnecting assembly shown in Figure 5;
Fig. 7 a is the sketch map of interconnecting assembly the 3rd embodiment of the present invention;
Fig. 7 b is the generalized section of Fig. 7 a along A-A ' direction;
Fig. 7 c is the generalized section of another embodiment of interconnecting assembly of the present invention;
Fig. 8 is the reparation sketch map of interconnecting assembly shown in Fig. 7 a;
Fig. 9 a is the sketch map of interconnecting assembly the 4th embodiment of the present invention;
Fig. 9 b is the generalized section of Fig. 9 a along A-A ' direction;
Figure 10 a is the sketch map of interconnecting assembly the 5th embodiment of the present invention;
Figure 10 b is the generalized section of Figure 10 a along A-A ' direction;
Figure 11 a is the sketch map of another embodiment of interconnecting assembly of the present invention;
Figure 11 b is the generalized section of Figure 11 a along A-A ' direction;
Figure 12 is the reparation sketch map of interconnecting assembly shown in Figure 11 a;
Figure 13 is the sketch map of interconnecting assembly the 6th embodiment of the present invention;
Figure 14 is that interconnecting assembly shown in Figure 13 is repaired sketch map;
Figure 15 is another reparation sketch map of interconnecting assembly shown in Figure 13;
Figure 16 is the sketch map of another embodiment of interconnecting assembly of the present invention;
Figure 17 is the flow chart of manufacturing approach first embodiment of interconnecting assembly of the present invention;
Figure 18 is the flow chart of manufacturing approach second embodiment of interconnecting assembly of the present invention;
Figure 19 is the flow chart of restorative procedure first embodiment of interconnecting assembly of the present invention.
Embodiment
For make above-mentioned purpose of the present invention, feature and advantage can be more obviously understandable, does detailed explanation below in conjunction with the accompanying drawing specific embodiments of the invention.A lot of details have been set forth in the following description so that make much of the present invention.But the present invention can implement much to be different from alternate manner described here, and those skilled in the art can do similar popularization under the situation of intension of the present invention, so the present invention does not receive the restriction of following disclosed practical implementation.
The invention provides a kind of interconnecting assembly, comprising: substrate; First conductive layer is positioned at the first area upper surface of said substrate; Second conductive layer is positioned at the second area upper surface of said substrate; Insulating barrier covers said first conductive layer; Interconnection layer is through said first conductive layer of the contact hole conductive interconnection on the contact hole on first conductive layer and second conductive layer and said second conductive layer; Also comprise repair structure, said repair structure is a conductive layer, is positioned at said first conductive layer and/or second conductive layer top.
Accordingly, the present invention also provides a kind of interconnecting assembly, comprising: substrate; First conductive layer is positioned at the first area upper surface of said substrate; Second conductive layer is positioned at the second area upper surface of said substrate; Insulating barrier covers said first conductive layer; Interconnection layer is through said first conductive layer of the contact hole conductive interconnection on the contact hole on first conductive layer and second conductive layer and said second conductive layer; Also comprise repair structure; Said repair structure is an electric conducting material; Be positioned on the 3rd zone of said substrate; Said repair structure comprise first conductive layer to extension and second conductive layer in the 3rd zone to the extension in the 3rd zone, said first conductive layer is laminated construction to the extension in the 3rd zone in the 3rd zone to the extension and second conductive layer in the 3rd zone.
Accordingly, the present invention also provides a kind of manufacturing approach of interconnecting assembly, comprises step: substrate is provided; On the first area of said substrate, form first conductive layer, said first conductive layer is carried out etching forming required pattern, and form the insulating barrier of first conductive layer; On the second area of said substrate, form second conductive layer, said second conductive layer is carried out etching forming required pattern, and form the insulating barrier of second conductive layer; Form first contact hole in the insulating barrier on said first conductive layer, form second contact hole in the insulating barrier on said second conductive layer; In first contact hole and second contact hole, form interconnection layer, said interconnection layer is filled in said first contact hole and second contact hole, and makes the win conductive layer and the second conductive layer conductive interconnection.
Accordingly, the present invention also provides a kind of manufacturing approach of interconnecting assembly, comprises step: substrate is provided; On the first area of said substrate, form first conductive layer, and on the 3rd zone, form the extended structure of first conductive layer, form the insulating barrier of first conductive layer then; On the second area of said substrate, form second conductive layer; And on the 3rd zone, form the extended structure of second conductive layer; Form the insulating barrier of second conductive layer then, and the extended structure of the extended structure of second conductive layer and first conductive layer is a laminated construction; Form first contact hole in the insulating barrier on said first conductive layer, form second contact hole in the insulating barrier on said second conductive layer; In first contact hole and second contact hole, form interconnection layer, said interconnection layer is filled in the said contact hole, and makes the win conductive layer and the second conductive layer conductive interconnection.
Corresponding the present invention also provides a kind of restorative procedure of interconnecting assembly; Comprise step: utilize laser that the said repair structure place of first area is carried out laser welding, make extension and the first conductive layer laser welding of interconnection layer above said first conductive layer; Utilize laser that the repair structure place of second area is carried out laser welding, make extension and the second conductive layer laser welding of interconnection layer above said second conductive layer.
Corresponding the present invention also provides a kind of restorative procedure of interconnecting assembly, and comprise step: the lamination place to first conductive layer and second conductive layer carries out laser welding, and first conductive layer and second conductive layer are electrically connected.
Be elaborated below in conjunction with accompanying drawing.
Interconnecting assembly first embodiment
Fig. 2 is the sketch map of interconnecting assembly first embodiment of the present invention.As shown in Figure 2, interconnecting assembly comprises: substrate 300; The first area of substrate 300 (not shown) upper surface has first conductive layer 311; The second area of substrate 300 (not shown) upper surface has second conductive layer 312; On first conductive layer 311 and second conductive layer 312, be coated with insulating barrier (not shown), for example the material of insulating barrier can be insulating material such as silicon nitride, organic membrane; On insulating barrier, have interconnection layer 316, the material of interconnection layer 316 has conductive characteristic, for example can be tin indium oxide (ITO), indium zinc oxide (IZO) or metal; The insulating barrier that is arranged on first conductive layer 311 has the first contact hole 315a, and the insulating barrier that is arranged on second conductive layer 312 has the second contact hole 315b; Interconnection layer 316 is through the first contact hole 315a and first conductive layer, 311 conductive interconnections, and interconnection layer 316 is through the second contact hole 315b and second conductive layer, 312 conductive interconnections.
Interconnecting assembly also comprises repair structure 317, and the material of said repair structure 317 is an electric conducting material, for example can be ITO, IZO or metal, and repair structure 317 is positioned at second conductive layer, 312 tops, and with first conductive layer, 311 conductive interconnections.
In the present embodiment; Preferably, repair structure 317 is the extension of said interconnection layer 316 above second conductive layer 312, in other words; Repair structure 317 is the integral body of a conductive interconnection with interconnection layer 316; For example repair structure 317 can form when forming interconnection layer 316 together, has saved processing step like this, and repair structure 317 is through the first contact hole 315a and first conductive layer, 311 conductive interconnections.
In the interconnecting assembly, interconnection layer 316 through the first contact hole 315a and the second contact hole 315b with first conductive layer 311 and second conductive layer, 312 conductive interconnections, if still second conductive layer 312 of the corresponding second contact hole 315b position is corroded; Perhaps in the process that forms the second contact hole 315b, over etching occurs during to the insulating barrier (not shown) etching above second conductive layer 312, split and make conductive interconnection layer 316 film occur; Perhaps to first conductive layer 311 or second conductive layer, 312 etchings the time, perhaps in the use of product,, electrostatic charge burnt owing to too much making near first conductive layer 311 of contact hole or second conductive layer 312; All possibly cause first conductive layer 311 and second conductive layer 312 to open circuit.Present embodiment is provided with repair structure 317, if open circuit owing to the above reason causes 312 generations of second conductive layer and the interconnection layer 316 at the second contact hole 315b place, thereby said first conductive layer 311 is opened circuit with said second conductive layer 312; Then, make repair structure 317 and second conductive layer, 312 conductive interconnections, thereby the opening circuit between the conductive layer 311 and second conductive layer 312 of winning repaired through said repair structure 317 of laser welding and said second conductive layer 312.Like this; Can reduce the product rejection that occurs opening circuit and cause owing to the contact hole place significantly; Especially when the first metal layer 311 and second metal level 312 are the connecting line of two chip for driving of display unit respectively, can reduce the waste that causes because of scrapping significantly.
Certainly, in other embodiments, can first conductive layer 311 in the foregoing description and second conductive layer 312 be exchanged, in other words, first conductive layer 311 in the foregoing description can be called second conductive layer, and second conductive layer 312 is called first conductive layer.
Interconnecting assembly second embodiment
Fig. 3 is the sketch map of interconnecting assembly second embodiment of the present invention.As shown in Figure 3, interconnecting assembly comprises: substrate 300; The first area of substrate 300 (not shown) upper surface has first conductive layer 311; The second area of substrate 300 (not shown) upper surface has second conductive layer 312; On first conductive layer 311 and second conductive layer 312, be coated with insulating barrier (not shown), for example the material of insulating barrier can be insulating material such as silicon nitride, organic membrane; On insulating barrier, have interconnection layer 316, the material of interconnection layer 316 has conductive characteristic, for example can be tin indium oxide (ITO), indium zinc oxide (IZO) or metal; The insulating barrier that is arranged on first conductive layer 311 has the first contact hole 315a, and the insulating barrier that is arranged on second conductive layer 312 has the second contact hole 315b; Interconnection layer 316 is through the first contact hole 315a and first conductive layer, 311 conductive interconnections, and interconnection layer 316 is through the second contact hole 315b and second conductive layer, 312 conductive interconnections.
As shown in Figure 3; Interconnecting assembly also comprises repair structure 417; The material of said repair structure 417 is an electric conducting material; For example can be ITO, IZO or metal, repair structure 417 is positioned at first conductive layer, 311 tops and second conductive layer, 312 tops, and the part 417a of the part 417b that is positioned at second conductive layer, 312 tops of repair structure 417 and first conductive layer, 311 tops is through interconnection layer 316 conductive interconnections.
In the present embodiment; The part 417a that repair structure 417 is positioned at first conductive layer, 311 tops is the extension of said interconnection layer 316 above first conductive layer 311; The part 417b that repair structure 417 is positioned at second conductive layer, 312 tops is the extension of said interconnection layer 316 above second conductive layer 312; In other words; Repair structure 417 is the integral body of a conductive interconnection with interconnection layer 316, so repair structure 417 is positioned at the part 417a of first conductive layer, 311 tops and the part 417b of second conductive layer, 312 tops passes through interconnection layer 316 conductive interconnections.
In the interconnecting assembly; Interconnection layer 316 through the first contact hole 315a and the second contact hole 315b with first conductive layer 311 and second conductive layer, 312 conductive interconnections, if still first conductive layer 311 of the corresponding first contact hole 315a position or second conductive layer 312 of corresponding contact hole 315b position are corroded; Perhaps in the process that forms contact hole 315a and 315b, over etching occurs during to the insulating barrier etching on the insulating barrier on first conductive layer 311 or second conductive layer 312, split and make conductive interconnection layer 316 film occur; Perhaps to first conductive layer 311 or second conductive layer, 312 etchings the time, perhaps in the use of product,, electrostatic charge burnt owing to too much making near first conductive layer 311 of contact hole or second conductive layer 312; All possibly cause opening circuit between first conductive layer 311 and second conductive layer 312 and the interconnection layer 316.Present embodiment is through being provided with repair structure 417; If open circuit owing to the above reason causes 312 generations of second conductive layer and the interconnection layer 316 at the second contact hole 315b place; Or first conductive layer 311 at the first contact hole 315a place takes place and interconnection layer 316 opens circuit; As shown in Figure 4; Then, make the repair structure 417 and second conductive layer 312 and/or first conductive layer 311 at pad c1 conductive interconnection, thereby the opening circuit between the conductive layer 311 and second conductive layer 312 of winning repaired through the said repair structure 417 of laser welding and said first conductive layer 311 and/or said repair structure 417 of laser welding and said second conductive layer 312.
As shown in Figure 5; When the second conductive layer 315b at first conductive layer 311 at the first contact hole 315a place or the second contact hole 315b place is burnt by static or ruptures; Then through laser welding repair structure 417 places; Make the repair structure 417 and second conductive layer 312 or first conductive layer 311 at pad c1 conductive interconnection, thereby the opening circuit between the conductive layer 311 and second conductive layer 312 of winning repaired.
Certainly in another embodiment; As shown in Figure 6; Repair structure 417 also can extend along the direction of first conductive layer 311 and second conductive layer 312 simultaneously; For example shown in Figure 6, the said interconnection layer 316 whole rectangular configuration that form, the joint face of repair structure 417 and first conductive layer 311 and second conductive layer 312 is bigger like this.Except repairing the defective shown in Figure 5; Can also repair: the interconnection layer 316 at said first contact hole 315a place and the said second contact hole 315b place is burnt by static or film splits; In case virtual connection or damage appear in the position of said two place's contact holes; Can be with repair structure 417 and said first conductive layer 311 and said second conductive layer, 312 laser welding, then first conductive layer 311 and second conductive layer 312 are along the extension conducting of repair structure.
Interconnecting assembly the 3rd embodiment
Fig. 7 a is the sketch map of structure of the 3rd embodiment of interconnecting assembly of the present invention, and Fig. 7 b is the cutaway view of Fig. 7 a along A-A ' direction.
Shown in Fig. 7 a and 7b, interconnecting assembly comprises: substrate 300; The first area of substrate 300 (not shown) upper surface has first conductive layer 311; The second area of substrate 300 (not shown) upper surface has second conductive layer 312; On first conductive layer 311, be coated with insulating barrier 313a and 313b, on second conductive layer 312, be coated with insulating barrier 313b, for example the material of insulating barrier can be insulating material such as silicon nitride, organic membrane; On insulating barrier 313b, have interconnection layer 316, the material of interconnection layer 316 has conductive characteristic, for example can be tin indium oxide (ITO), indium zinc oxide (IZO) or metal; The insulating barrier 313a and the 313b that are arranged on first conductive layer 311 have the first contact hole 315a, and the insulating barrier 313b that is arranged on second conductive layer 312 has the second contact hole 315b; Interconnection layer 316 is through the first contact hole 315a and first conductive layer, 311 conductive interconnections, and interconnection layer 316 is through the second contact hole 315b and second conductive layer, 312 conductive interconnections.
Shown in Fig. 7 a and Fig. 7 b, interconnecting assembly also comprises repair structure 517, and the material of said repair structure 517 is an electric conducting material, for example can be ITO, IZO or metal.Said repair structure 517 can be near said interconnection layer, the arbitrary region that first conductive layer 311 and second conductive layer 312 overlap.In the present embodiment; Said repair structure 517 is shown in Fig. 7 a and Fig. 7 b; First conductive layer 311 and second conductive layer 312 that can also comprise the second contact hole 315b position are because the second contact hole 315b position also is the zone that first conductive layer 311 and second conductive layer 312 overlap.
Preferably, have through hole 5170 in the said repair structure 517, a side of said through hole can be exposed first conductive layer 311, and the opposite side of said through hole can expose second conductive layer 312; Said through hole 5170 plays the effect that indicates said reparation position.The part of exposing first conductive layer 311 and conductive layer 312 in the said through hole 5170 can make things convenient for respectively to find from the tow sides of substrate repairs the position.In the present embodiment; Repair structure 517 comprises that said first conductive layer 311 extends to the extension of second conductive layer, 312 belows; And the lap of second conductive layer 312 and first conductive layer, 311 extensions; In other words, the part of repair structure 517 and first conductive layer 311 are the integral body of a conductive interconnection, and the another part of repair structure 517 and second conductive layer 312 are the integral body of a conductive interconnection; For example the part of repair structure 517 can form when forming first conductive layer 311 together, and another part of repair structure 517 can form when forming second conductive layer 312 together.
In the interconnecting assembly, interconnection layer 316 through the first contact hole 315a and the second contact hole 315b with first conductive layer 311 and second conductive layer, 312 conductive interconnections., but if the interconnection layer 316 of the corresponding first contact hole 315a and/or the second contact hole 315b position is corroded; Perhaps in the process that forms contact hole 315a; To insulating barrier 313a and the 313b on first conductive layer 311, and/or the insulating barrier 313b on second conductive layer 312, over etching appears during etching; The angle at the insulating barrier edge after the etching does not reach requirement, splits and make conductive interconnection layer 316 film occur; Perhaps, second conductive layer 312 at the corresponding second contact hole 315b place is burnt by static or corrodes; Perhaps interconnection layer 316 because the bad generation film of quality of forming film splits, makes to produce fracture between the interconnection layer 316 in the process of filling contact hole; Perhaps in the manufacturing process of postorder, the static of generation can not well be released, and makes the interconnection layer 316 of contact hole 315a and 315b position burnt by static or wounds, and all possibly cause first conductive layer 311 and second conductive layer 312 to open circuit.
Above-mentioned various when causing situation that first conductive layer 311 and second conductive layer 312 open circuit when occurring, can near through hole 5170, carry out laser welding, first conductive layer 311 and 312 electric connections of second conductive layer are got up.
Shown in Figure 8 is the plane structure chart of another embodiment of the present invention, and Fig. 7 c is depicted as the profile of the planar structure of present embodiment.As shown in Figure 8, if second conductive layer, the 312 generation static at the second contact hole 315b place burn or corrode, thereby said second conductive layer 312 opens circuit with interconnection layer 316; Perhaps the interconnection layer 316 at the second contact hole 315b place takes place that static burn or film splits, and the interconnection layer 316 and second conductive layer 312 open circuit; Perhaps first conductive layer, the 311 generation static at the first contact hole 315a place burn or corrode, thereby said first conductive layer 311 opens circuit with interconnection layer 316; Perhaps the interconnection layer 316 at the first contact hole 315a place takes place that static burn or film splits; The interconnection layer 316 and first conductive layer 311 open circuit; Then through laser welding repair structure 517; First conductive layer 311 and second conductive layer 312 that make repair structure 517 be at pad c1 conductive interconnection, thereby the opening circuit between the conductive layer 311 and second conductive layer 312 of winning repaired.
In an embodiment of the present invention; Shown in Fig. 7 c, preferred, in repair structure 517, have through hole 5170; And the side-walls of through hole 5170 along the through hole direction perpendicular to substrate; In other words just second conductive layer 312 covers first conductive layer 311 just, and this through hole 5170 is used to locate the position of repair structure 517, thereby can carry out REPAIR WELDING accurately.
Certainly, in other embodiments, can first conductive layer 311 in the foregoing description and second conductive layer 312 be exchanged, in other words, first conductive layer 311 in the foregoing description can be called second conductive layer, and second conductive layer 312 is called first conductive layer.
Interconnecting assembly the 4th embodiment
Fig. 9 a is the sketch map of interconnecting assembly the 4th embodiment of the present invention, and Fig. 9 b is the profile of Fig. 9 a along A-A ' direction.Shown in Fig. 9 a and 9b, interconnecting assembly comprises: substrate 300; The first area of substrate 300 (not shown) upper surface has first conductive layer 311; The second area of substrate 300 (not shown) upper surface has second conductive layer 312; On first conductive layer 311 and second conductive layer 312, be coated with insulating barrier (not shown), for example the material of insulating barrier can be insulating material such as silicon nitride, organic membrane; On insulating barrier, have interconnection layer 316, the material of interconnection layer 316 has conductive characteristic, for example can be tin indium oxide (ITO), indium zinc oxide (IZO) or metal; The insulating barrier that is arranged on first conductive layer 311 has the first contact hole 315a, and the insulating barrier that is arranged on second conductive layer 312 has the second contact hole 315b; Interconnection layer 316 is through the first contact hole 315a and first conductive layer, 311 conductive interconnections, and interconnection layer 316 is through the second contact hole 315b and second conductive layer, 312 conductive interconnections.
Shown in Fig. 9 a and Fig. 9 b, interconnecting assembly also comprises repair structure 517, and the material of said repair structure 517 is an electric conducting material, for example can ITO, IZO or metal.In the present embodiment; Repair structure 517 comprises that said first conductive layer 311 extends to the extension 517a of second conductive layer, 312 belows; And the lap 517b of second conductive layer 312 and first conductive layer, 311 extensions; In other words, the part of repair structure 517 and first conductive layer 311 are the integral body of a conductive interconnection, and the another part of repair structure 517 and second conductive layer 312 are the integral body of a conductive interconnection; For example a part of 517a of repair structure 517 can form when forming first conductive layer 311 together, and another part 517b of repair structure 517 can form when forming second conductive layer 312 together.In addition in the present embodiment; Said repair structure 517; Shown in Fig. 9 a and Fig. 9 b; First conductive layer 311 and second conductive layer 312 that can also comprise the first contact hole 315a and the second contact hole 315b position are because the first contact hole 315a and the second contact hole 315b position also are the zones that first conductive layer 311 and second conductive layer 312 overlap.In the interconnecting assembly; Interconnection layer 316 through the first contact hole 315a and the second contact hole 315b with first conductive layer 311 and second conductive layer, 312 conductive interconnections, if still the interconnection layer 316 of the corresponding first contact hole 315a and/or the second contact hole 315b position is corroded; Perhaps in the process that forms contact hole 315a; To insulating barrier 313a and the 313b on first conductive layer 311, and/or the insulating barrier 313b on second conductive layer 312, over etching appears during etching; The angle at the insulating barrier edge after the etching does not reach requirement, splits and make conductive interconnection layer 316 film occur; Perhaps, second conductive layer 312 at the corresponding first contact hole 315a and the second contact hole 315b place is burnt by static or corrodes; Perhaps interconnection layer 316 because the bad generation film of quality of forming film splits, makes to produce fracture between the interconnection layer 316 in the process of filling contact hole; Perhaps in the manufacturing process of postorder, the static of generation can not well be released, and makes the interconnection layer 316 of contact hole 315a and 315b position burnt by static or wounds, and all possibly cause first conductive layer 311 and second conductive layer 312 to open circuit.
Above-mentioned various when causing situation that first conductive layer 311 and second conductive layer 312 open circuit when occurring, can near through hole 5170, carry out laser welding, first conductive layer 311 and 312 electric connections of second conductive layer are got up.
The repair structure 517 of present embodiment also comprises first conductive layer 311 and second conductive layer 312 of the first contact hole 315a and the second contact hole 315b position; If then 311 generations of first conductive layer and the interconnection layer 316 at the first contact hole 315a place open circuit; Perhaps interconnection layer 316 generations and first conductive layer 311 at the first contact hole 315a place open circuit; Then through laser welding repair structure 517b place; Make first conductive layer 311 and second conductive layer, 312 conductive interconnections; Also can first conductive layer 311 and second conductive layer, 312 laser welding of the first contact hole 315a and the second contact hole 315b position be got up, thereby the opening circuit between the conductive layer 311 and second conductive layer 312 of winning repaired.
Preferably, in repair structure 517, have through hole 5170, this through hole 5170 is used to locate the position of repair structure 517, thereby can carry out REPAIR WELDING accurately.
Certainly, in other embodiments, can first conductive layer 311 in the foregoing description and second conductive layer 312 be exchanged, in other words, first conductive layer 311 in the foregoing description can be called second conductive layer, and second conductive layer 312 is called first conductive layer.
Interconnecting assembly the 5th embodiment
Figure 10 a is the sketch map of interconnecting assembly the 5th embodiment of the present invention, and Figure 10 b is the profile of Figure 10 a along A-A ' direction.Shown in Figure 10 a and Figure 10 b, interconnecting assembly comprises: substrate 300; The first area of substrate 300 (not shown) upper surface has first conductive layer 311; The second area of substrate 300 (not shown) upper surface has second conductive layer 312; On first conductive layer 311 and second conductive layer 312, be coated with insulating barrier (not shown), for example the material of insulating barrier can be insulating material such as silicon nitride, organic membrane; On insulating barrier, have interconnection layer 316, the material of interconnection layer 316 has conductive characteristic, for example can be tin indium oxide (ITO), indium zinc oxide (IZO) or metal; The insulating barrier that is arranged on first conductive layer 311 has the first contact hole 315a, and the insulating barrier that is arranged on second conductive layer 312 has the second contact hole 315b; Interconnection layer 316 is through the first contact hole 315a and first conductive layer, 311 conductive interconnections, and interconnection layer 316 is through the second contact hole 315b and second conductive layer, 312 conductive interconnections.
Shown in Figure 10 a; Interconnecting assembly also comprises repair structure 717; The material of said repair structure 717 is an electric conducting material; For example can ITO, IZO or metal; Repair structure 717 is positioned on the 3rd zone 710 of said substrate 300, said repair structure 717 comprise first conductive layer 311 to the 3rd 710 extension, zone and second conductive layer 312 to the extension in the 3rd zone, said first conductive layer 311 is laminated construction to the extension in the 3rd zone 710 in the 3rd zone 710 to the extension and second conductive layer 312 in the 3rd zone 710.
Preferably, said interconnecting assembly also comprises repair structure as shown in Figure 6 417, the interconnection layer 316 whole rectangular configuration that form, and the joint face of repair structure 417 and first conductive layer 311 and second conductive layer 312 is bigger like this.Except repairing the defective shown in Figure 10 a; Can also repair: the interconnection layer 316 at said first contact hole 315a place and the said second contact hole 315b place is burnt by static or film splits; In case virtual connection or damage appear in the position of said two place's contact holes; Can be with repair structure 417 and said first conductive layer 311 and said second conductive layer, 312 laser welding, then first conductive layer 311 and second conductive layer 312 are along the extension conducting of repair structure.
Preferably; Figure 11 b is the profile of Figure 11 along A-A ' direction, shown in Figure 11 a and Figure 11 b, in the present embodiment; Have through hole 717a in the said repair structure 717, said through hole 717a exposes first conductive layer 311 in the said laminated construction and/or second conductive layer 312.In welding, just can look first conductive layer 311 and second conductive layer 312 of needs welding like this from one of substrate sideways, therefore can accurately locate.
Preferably, also have through hole 717b in the said repair structure 717, said through hole 717b exposes first conductive layer 311 in the said laminated construction and/or second conductive layer 312.In welding, just can see first conductive layer 311 and second conductive layer 312 that needs welding like this, therefore can accurately locate from the substrate opposite side.Said through hole 717a and 717b can be oval, circle, rectangle or square or the like.
In the interconnecting assembly; Interconnection layer 316 through the first contact hole 315a and the second contact hole 315b with first conductive layer 311 and second conductive layer, 312 conductive interconnections, if but first conductive layer 311 of the corresponding first contact hole 315a position perhaps second conductive layer 312 of the corresponding second contact hole 315b position be corroded; Perhaps in the process that forms contact hole 315a, over etching occurs during to the insulating barrier etching on the insulating barrier on first conductive layer 311 and/or second conductive layer 312, make interconnection layer bad with being connected of first conductive layer 311 and/or second conductive layer 312; Perhaps interconnection layer 316 because the bad generation film of quality of forming film splits, makes to produce fracture between the interconnection layer 316 in the process of filling contact hole; If perhaps in the manufacturing process of postorder, the static of generation can not well be released, make the interconnection layer 316 of contact hole 315a and 315b position burnt or wound by static, all possibly cause first conductive layer 311 and second conductive layer 312 to open circuit.To these situation; Shown in figure 12; In the present embodiment, then can pass through laser welding repair structure 717 places, weld first conductive layer 311 to the 3rd 710 extension, zone and second conductive layer 312 extension to the 3rd zone 710 at pad C1; Make second conductive layer 312 and first conductive layer, 311 conductive interconnections, thereby the opening circuit between the conductive layer 311 and second conductive layer 312 of winning repaired.
Interconnecting assembly the 6th embodiment
Figure 13 is the sketch map of interconnecting assembly the 6th embodiment of the present invention.Shown in figure 13, interconnecting assembly comprises: substrate 300; The first area of substrate 300 (not shown) upper surface has first conductive layer 311; The second area of substrate 300 (not shown) upper surface has second conductive layer 312; On first conductive layer 311 and second conductive layer 312, be coated with insulating barrier (not shown), for example the material of insulating barrier can be insulating material such as silicon nitride, organic membrane; On insulating barrier, have interconnection layer 316, the material of interconnection layer 316 has conductive characteristic, for example can be tin indium oxide (ITO), indium zinc oxide (IZO) or metal; The insulating barrier that is arranged on first conductive layer 311 has the first contact hole 315a, and the insulating barrier that is arranged on second conductive layer 312 has the second contact hole 315b; Interconnection layer 316 is through the first contact hole 315a and first conductive layer, 311 conductive interconnections, and interconnection layer 316 is through the second contact hole 315b and second conductive layer, 312 conductive interconnections.
Shown in figure 13; Interconnecting assembly also comprises repair structure 717; The material of said repair structure 717 is an electric conducting material; For example can be ITO, IZO or metal; Repair structure 717 is positioned on the 3rd zone 710 of said substrate 300, said repair structure 717 comprise first conductive layer 311 to the 3rd 710 extension, zone and second conductive layer 312 to the extension in the 3rd zone, said first conductive layer 311 is laminated construction to the extension in the 3rd zone 710 in the 3rd zone 710 to the extension and second conductive layer 312 in the 3rd zone 710.
Interconnecting assembly also comprises repair structure 417; Repair structure 417 comprises the part 417a that is positioned at first conductive layer, 311 tops; It is the extension of said interconnection layer 316 above first conductive layer 311; Repair structure 417 also comprises the part 417b that is positioned at second conductive layer, 312 tops, and it is the extension of said interconnection layer 316 above second conductive layer 312, in other words; Repair structure 417 is the integral body of a conductive interconnection with interconnection layer 316, so repair structure 417 is positioned at the part 417a of first conductive layer, 311 tops and the part 417b of second conductive layer, 312 tops passes through interconnection layer 316 conductive interconnections.
In the interconnecting assembly; Interconnection layer 316 through the first contact hole 315a and the second contact hole 315b with first conductive layer 311 and second conductive layer, 312 conductive interconnections, if but first conductive layer 311 of the corresponding first contact hole 315a position perhaps second conductive layer 312 of the corresponding second contact hole 315b position be corroded; Perhaps in the process that forms contact hole 315a; Over etching appears during to the insulating barrier etching on the insulating barrier on first conductive layer 311 and/or second conductive layer 312; The edge angle of insulating barrier does not reach requirement; And make the poor connectivity of interconnection layer 316 and first conductive layer 311 and/or second conductive layer 312, all possibly cause first conductive layer 311 and second conductive layer 312 to open circuit.To these situation; Like Figure 14; In the present embodiment; Then can be positioned at the part 417a and first conductive layer 311 of first conductive layer, 311 tops through laser welding repair structure 417, the part 417a and first conductive layer 311 that make repair structure 417 be positioned at first conductive layer, 311 tops pass through pad C1 conductive interconnection; And laser welding repair structure 417 is positioned at the part 417b of second conductive layer, 312 tops, makes part 417b and second conductive layer 312 that repair structure 417 is positioned at second conductive layer, 312 tops through pad C1 conductive interconnection.
If first conductive layer 311 of the corresponding in addition first contact hole 315a position or second conductive layer 312 of the corresponding second contact hole 315b position are corroded; Perhaps in the process that forms contact hole 315a; Over etching appears during to the insulating barrier etching on the insulating barrier on first conductive layer 311 and/or second conductive layer 312; The edge angle of insulating barrier does not reach requirement, and makes the poor connectivity of interconnection layer 316 and first conductive layer 311 and/or second conductive layer 312; Perhaps interconnection layer 316 because the bad generation film of quality of forming film splits, makes to produce fracture between the interconnection layer 316 in the process of filling contact hole; Perhaps in the manufacturing process of postorder; The static that produces can not well be released, and make the interconnection layer 316 of contact hole 315a and 315b position burnt or wound by static, thereby when win conductive layer 311 and second conductive layer 312 are opened circuit; Can be shown in figure 15, welding pad C1.
Preferably, shown in figure 16, in the present embodiment, have through hole 717a in the said repair structure 717, said through hole 717a exposes first conductive layer 311 that is positioned at the upper strata in the said laminated construction or second conductive layer 312.In welding, just can look first conductive layer 311 and second conductive layer 312 of needs welding like this from one of substrate sideways, therefore can accurately locate.
Preferably, in repair structure 717, have through hole 717b, said through hole 717b exposes first conductive layer 311 that is positioned at the upper strata in the said laminated construction or second conductive layer 312.In welding, just can see first conductive layer 311 and second conductive layer 312 that needs welding like this, therefore can accurately locate from the substrate opposite side.Said through hole 717a and 717b can be oval, circle, rectangle or square or the like.
Manufacturing approach first embodiment of interconnecting assembly
Figure 17 is the flow chart of manufacturing approach first embodiment of interconnecting assembly of the present invention, below with reference to figure 7a, Fig. 7 b, Figure 17, present embodiment is described.Present embodiment comprises step:
S1: substrate is provided.
Said substrate 300 can be glass substrate or plastic base; Described substrate 300 can also be other flexible organic material.
S2: go up formation first conductive layer 311 in the first area of said substrate 300 (not shown), said first conductive layer 311 is carried out etching to form required pattern, form the insulating barrier of first conductive layer 311;
S3: go up formation second conductive layer 312 at the second area (not shown) of said substrate 300, said second conductive layer 312 is carried out etching to form required pattern, form the insulating barrier of second conductive layer 312;
Concrete, said second conductive layer 312 extends to said first conductive layer 311 tops, and the laminated construction of said first conductive layer 311 and said second conductive layer 312 is a repair structure.
Concrete, with reference to figure 7a and Fig. 7 b, utilize the method for deposition to go up formation first conductive layer 311 in the first area of substrate 300 (not shown); Then, on first conductive layer 311 and other position of substrate 300 form insulating barrier 313a; Top, part position then last at the second area (not shown) of substrate 300 and first conductive layer 311 forms second conductive layer 312; And the extended structure of the extended structure of second conductive layer 312 and first conductive layer 311 is a laminated construction; The laminated construction of said first conductive layer 311 and said second conductive layer 312 is a repair structure, and the formation insulating barrier 313b of second conductive layer 312.Since the existence of insulating barrier 313a, electric insulation between first conductive layer 311 and second conductive layer 312.
S4: etching forms the first contact hole 315a in the insulating barrier on first conductive layer 311, and etching forms the second contact hole 315b in the insulating barrier on said second conductive layer 312.
S5: on the said insulating barrier 314 of first area (not shown) and second area (not shown), form interconnection layer 316, said interconnection layer 316 is filled in the said through hole, and makes win conductive layer 311 and second conductive layer, 312 conductive interconnections.
Concrete; With reference to figure 7a; Deposition forms interconnection layer 316 on the said insulating barrier of first area (not shown) and second area (not shown); Said interconnection layer 316 is filled among the first contact hole 315a and the second contact hole 315b, and makes win conductive layer 311 and second conductive layer, 312 conductive interconnections.
In the above-described embodiments, the position of first conductive layer 311 and second conductive layer 312 can exchange.
Manufacturing approach second embodiment of interconnecting assembly
S1 ': substrate is provided.
Said substrate can be glass substrate or plastic base; Described substrate can also be other flexible organic material.
S2 ': go up formation first conductive layer in the first area of said substrate (not shown), and on the 3rd zone, form the extended structure of first conductive layer, form the insulating barrier of first conductive layer then; Go up formation second conductive layer at the second area (not shown) of said substrate, and on the 3rd zone, form the extended structure of second conductive layer, form the insulating barrier of second conductive layer then; And the extended structure of the extended structure of second conductive layer and first conductive layer is a laminated construction.
Concrete, shown in Fig. 7 a, can utilize the method for deposition to go up formation first conductive layer 311 in the first area of substrate 300 (not shown), and on the 3rd zone, form the extended structure of first conductive layer 311; Then, on first conductive layer 311 and other position of substrate 300 form insulating barrier; Then go up and form second conductive layer 312 at the second area (not shown) of substrate 300; And on the 3rd zone, form the extended structure of second conductive layer 312; And the extended structure of the extended structure of second conductive layer 312 and first conductive layer 311 is a laminated construction; And has insulating barrier between first conductive layer 311 and second conductive layer 312, therefore electric insulation between first conductive layer 311 and second conductive layer 312.
Preferably, can also in said repair structure 717, etching form through hole 717a, said through hole 717a exposes first conductive layer 311 that is positioned at lower floor in the said laminated construction.In welding, just can look first conductive layer 311 of needs welding like this from one of substrate sideways, therefore can accurately locate.
Preferably, can etching substrate 300, in substrate 300, form through hole 717b, said through hole 717b exposes second conductive layer 312 that is positioned at the upper strata in the said laminated construction.In welding, just can see second conductive layer 312 that needs welding like this, therefore can accurately locate from the opposite side of substrate.Said through hole 717a and 717b can be oval, circle, rectangle or square or the like.
In the above-described embodiments, the position of first conductive layer 311 and second conductive layer 312 can exchange.S3 ': form first contact hole in the insulating barrier on said first conductive layer, form second contact hole in the insulating barrier on said second conductive layer.
S4 ': in first contact hole and second contact hole, form interconnection layer, said interconnection layer is filled in the said contact hole, and makes the win conductive layer and the second conductive layer conductive interconnection.
The embodiment of restorative procedure
The present invention also provides a kind of restorative procedure of interconnecting assembly.With reference to Figure 18, this restorative procedure comprises step:
A: utilize laser that the said repair structure place of first area is carried out laser welding, make extension and the first conductive layer laser welding of interconnection layer above said first conductive layer;
B: utilize laser that the repair structure place of second area is carried out laser welding, make extension and the second conductive layer laser welding of interconnection layer above said second conductive layer.
Another embodiment of restorative procedure
Lamination place to first conductive layer and second conductive layer carries out laser welding, and first conductive layer and second conductive layer are electrically connected.
The above only is preferred embodiment of the present invention, is not the present invention is done any pro forma restriction.Any those of ordinary skill in the art; Do not breaking away under the technical scheme scope situation of the present invention; All the method for above-mentioned announcement capable of using and technology contents are made many possible changes and modification to technical scheme of the present invention, or are revised as the equivalent embodiment of equivalent variations.Therefore, every content that does not break away from technical scheme of the present invention, all still belongs in the scope of technical scheme protection of the present invention any simple modification, equivalent variations and modification that above embodiment did according to technical spirit of the present invention.
Claims (16)
1. interconnecting assembly comprises:
Substrate;
First conductive layer is positioned at the first area upper surface of said substrate;
Second conductive layer is positioned at the second area upper surface of said substrate;
Insulating barrier covers said first conductive layer;
Interconnection layer is through said first conductive layer of the contact hole conductive interconnection on the contact hole on first conductive layer and second conductive layer and said second conductive layer;
It is characterized in that also comprise repair structure, said repair structure is a conductive layer, be positioned at said first conductive layer and/or second conductive layer top.
2. interconnecting assembly according to claim 1; It is characterized in that; Said repair structure be said interconnection layer in the extension above said first conductive layer and/or the extension of said interconnection layer above said second conductive layer, and said interconnection layer links to each other with the extension conduction of said interconnection layer above said second conductive layer in the extension above said first conductive layer.
3. interconnecting assembly according to claim 2 is characterized in that, said interconnection layer extends along first conductive layer and the second conductive layer direction, and said interconnection layer is a rectangular configuration.
4. interconnecting assembly comprises:
Substrate;
First conductive layer is positioned at the first area upper surface of said substrate;
Second conductive layer is positioned at the second area upper surface of said substrate;
Insulating barrier covers said first conductive layer;
Interconnection layer is through said first conductive layer of the contact hole conductive interconnection on the contact hole on first conductive layer and second conductive layer and said second conductive layer;
It is characterized in that; Also comprise repair structure; Said repair structure is an electric conducting material; Be positioned on the 3rd zone of said substrate, said repair structure comprise first conductive layer to extension and second conductive layer in the 3rd zone to the extension in the 3rd zone, said first conductive layer is laminated construction to the extension in the 3rd zone in the 3rd zone to the extension and second conductive layer in the 3rd zone.
5. interconnecting assembly according to claim 4 is characterized in that, has through hole in first conductive layer in the said laminated construction and/or second conductive layer, and said through hole exposes first conductive layer in the said laminated construction and/or second conductive layer.
6. interconnecting assembly according to claim 5; It is characterized in that; Said first conductive layer extends to the contact hole position on said second conductive layer, said first conductive layer of the contact hole position on second conductive layer and the part that said second conductive layer constitutes repair structure of extending to.
7. interconnecting assembly according to claim 5; It is characterized in that; Said second conductive layer extends to the contact hole position on said first conductive layer, said second conductive layer of the contact hole position on first conductive layer and the part that said first conductive layer constitutes repair structure of extending to.
8. interconnecting assembly according to claim 4 is characterized in that, said shape of through holes is circular, square or oval.
9. interconnecting assembly according to claim 4; It is characterized in that; Said repair structure also comprises said interconnection layer in the extension above said first conductive layer and/or the extension of said interconnection layer above said second conductive layer, and said interconnection layer links to each other with the extension conduction of said interconnection layer above said second conductive layer in the extension above said first conductive layer.
10. interconnecting assembly according to claim 9 is characterized in that, said interconnection layer extends along first conductive layer and the second conductive layer direction, and said interconnection layer is a rectangular configuration.
11. the manufacturing approach according to each described interconnecting assembly in the claim 1 to 10 is characterized in that, comprises step:
Substrate is provided;
On the first area of said substrate, form first conductive layer, said first conductive layer is carried out etching forming required pattern, and form the insulating barrier of first conductive layer;
On the second area of said substrate, form second conductive layer, said second conductive layer is carried out etching forming required pattern, and form the insulating barrier of second conductive layer;
Form first contact hole in the insulating barrier on said first conductive layer, form second contact hole in the insulating barrier on said second conductive layer;
In first contact hole and second contact hole, form interconnection layer, said interconnection layer is filled in said first contact hole and second contact hole, and makes the win conductive layer and the second conductive layer conductive interconnection.
12. manufacturing approach according to claim 11 is characterized in that, also comprises step: repair structure is carried out etching, form through hole, said through hole exposes first conductive layer and/or second conductive layer of said repair structure.
13. the manufacturing approach of an interconnecting assembly is characterized in that, comprises step:
Substrate is provided;
On the first area of said substrate, form first conductive layer, and on the 3rd zone, form the extended structure of first conductive layer, form the insulating barrier of first conductive layer then; On the second area of said substrate, form second conductive layer; And on the 3rd zone, form the extended structure of second conductive layer; Form the insulating barrier of second conductive layer then, and the extended structure of the extended structure of second conductive layer and first conductive layer is a laminated construction;
Form first contact hole in the insulating barrier on said first conductive layer, form second contact hole in the insulating barrier on said second conductive layer;
In first contact hole and second contact hole, form interconnection layer, said interconnection layer is filled in the said contact hole, and makes the win conductive layer and the second conductive layer conductive interconnection.
14. manufacturing approach according to claim 13 is characterized in that, also comprises step: to the repair structure etching, form through hole, said through hole exposes first conductive layer and/or second conductive layer of said repair structure.
15. the restorative procedure like any described interconnecting assembly among the claim 1-3 is characterized in that, comprises step:
Utilize laser that the said repair structure place of first area is carried out laser welding, make extension and the first conductive layer laser welding of interconnection layer above said first conductive layer;
Utilize laser that the repair structure place of second area is carried out laser welding, make extension and the second conductive layer laser welding of interconnection layer above said second conductive layer.
16. the restorative procedure like any described interconnecting assembly among the claim 4-10 is characterized in that, comprises step:
Lamination place to first conductive layer and second conductive layer carries out laser welding, and first conductive layer and second conductive layer are electrically connected.
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Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5128737A (en) * | 1990-03-02 | 1992-07-07 | Silicon Dynamics, Inc. | Semiconductor integrated circuit fabrication yield improvements |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5128737A (en) * | 1990-03-02 | 1992-07-07 | Silicon Dynamics, Inc. | Semiconductor integrated circuit fabrication yield improvements |
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