CN101877333B - Multilayer packaging substrate, manufacture method thereof, and packaging structure of light-emitting semiconductor - Google Patents
Multilayer packaging substrate, manufacture method thereof, and packaging structure of light-emitting semiconductor Download PDFInfo
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- CN101877333B CN101877333B CN 200910136221 CN200910136221A CN101877333B CN 101877333 B CN101877333 B CN 101877333B CN 200910136221 CN200910136221 CN 200910136221 CN 200910136221 A CN200910136221 A CN 200910136221A CN 101877333 B CN101877333 B CN 101877333B
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- lamination unit
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/3011—Impedance
Abstract
The invention provides a multilayer packaging substrate, a manufacture method thereof and a packaging structure of a light-emitting semiconductor, wherein the multilayer packaging substrate comprises a first lamination unit and a second lamination unit. The first lamination unit comprises a first ceramic layer and a first copper layer, the first copper layer is covered on the surface of the first ceramic layer and provided with a first pattern. The second lamination unit is arranged on the first lamination unit and comprises a second ceramic layer and a second copper layer, the second ceramic layer is positioned between the first copper layer and the second copper layer, the second copper layer is provided with a second pattern; the second lamination unit also comprises at least one through hole, and the first copper layer partially exposes out of the through hole. The invention can reduce the thermal impedance of solder or thermal grease and improve the heat radiating efficiency.
Description
Technical field
The present invention relates to a kind of base plate for packaging and method for making thereof; Particularly relate to a kind of multiple field base plate for packaging and method for making thereof that has high heat dissipation efficiency and be applicable to COB (Chip on Board) encapsulation, but and the encapsulating structure that utilizes the emitting semiconductor crystal grain of this base plate for packaging formation.
Background technology
Light-emitting diode relies on advantages such as its power saving, environmental protection, long service life, has been widely used in many fields, and along with light-emitting diode process technique and Development of Materials, the power of light-emitting diode also significantly promotes.Owing to can supervene a large amount of heat during lumination of light emitting diode; Too much heat energy can influence luminous efficiency and luminescent lifetime, especially when luminous diode temperature surpasses 100 ℃, will speed up deterioration, therefore; When the power of light-emitting diode increasingly high; Light-emitting diode promptly faces harsh day by day heat management challenge, and in order to satisfy the radiating requirements of High Power LED, the heat dissipation technology of light-emitting diode must further be improved.
Being used to improve LED heat radiating usefulness at present than effective and efficient manner, promptly is the encapsulating structure of improvement light-emitting diode, and present plate encapsulating structure is the main flow of encapsulation High Power LED.The structure of the encapsulation module of general High Power LED single die comprises optical lens, LED crystal particle, transparent enclosure resin, fluorescence, electrode cable and fin etc.; Common way is with scolder or thermal grease LED crystal particle to be sticked on the fin; Reduce the thermal impedance of encapsulation module via fin; Again fin is sticked on the heat-radiating substrate with scolder or thermal grease, through heat-radiating substrate from fin a large amount of heat conduction go out.Thicker fin can be more effective and a large amount of heat radiation, but the heat-radiating substrate of its collocation must dispel the heat rapidly and need have enough structural strengths, could thermal conductance be gone out in good time.Now common heat-radiating substrate be the metallic packaging substrate (Metal Core PCB, MCPCB) and ceramic substrate.
Yet; The power of light-emitting diode constantly promotes; Existing encapsulating structure can't satisfy radiating requirements gradually; So how to reduce the thermal impedance of LED crystal particle to base plate for packaging, and can improve the heat radiation smoothness of LED crystal particle, the problem that still need improve for the High Power LED encapsulating structure.
Summary of the invention
The objective of the invention is is providing a kind of multiple field base plate for packaging with high heat dissipation efficiency and suitable COB encapsulation.
Another object of the present invention is in the method for making that a kind of multiple field base plate for packaging is provided.
Another purpose of the present invention, but a kind of encapsulating structure that comprises the emitting semiconductor of multiple field base plate for packaging is being provided.
So according to one side of the present invention, multiple field base plate for packaging of the present invention comprises: one first lamination unit and one second lamination unit.This first lamination unit comprises one first ceramic layer and one first bronze medal layer, and this first bronze medal layer is coated on a surface of this first ceramic layer, and has one first pattern.This second lamination unit is located on this first lamination unit; Comprise one second ceramic layer and one second bronze medal layer; This second ceramic layer is between this first bronze medal layer and this second bronze medal layer; This second bronze medal layer has one second pattern, and this second lamination unit also comprises at least one perforation, through this perforation this first bronze medal layer of part is exposed by this perforation.
Preferably, the area of this first lamination unit is greater than this second lamination unit, and this first bronze medal layer segment is exposed to outside this second lamination unit region covered.
Preferably, this first lamination unit comprises that also one is coated on another surperficial back side copper layer of this first ceramic layer.
Further, this multiple field base plate for packaging also comprises to be located in this perforation and the conducting block that is electrically connected with this first bronze medal layer, and this conducting block need have good electrical conductivity and thermal conductivity, and is preferable with copper billet, can engage with the direct eutectic of this first bronze medal layer.
Multiple field base plate for packaging of the present invention, this perforation are arranged in the zone that is provided with this second bronze medal layer.
Multiple field base plate for packaging of the present invention, this first lamination unit is directly engaged by heat treatment with this second lamination unit.
Be applicable to the material of copper layer of the present invention, with copper and have good conductive and the copper alloy that can engage with the ceramic layer eutectic preferable.Be applicable to the material of ceramic layer of the present invention, aluminium oxide (Al2O3) for example, aluminium nitride (AlN), titanium oxide (TiO2); Silica (SiO2), zirconia (ZrO2), zinc oxide (ZnO); Forsterite (2MgOSiO2), barium titanate (BaTiO3) etc., wherein preferable with aluminium oxide and aluminium nitride.The first lamination unit of the present invention and the second lamination unit general direct copper joining technique capable of using (is called for short DCB; Direct Copper Bonding or abbreviation DBC; Direct BondingCopper), be lower than metallic copper fusing point (about 1083 ℃) and be higher than copper one and heat-treat directly with the temperature range of cupric oxide eutectic temperature (1063 ℃) and engage.
But multiple field base plate for packaging of the present invention is particularly suitable for the base plate for packaging as the emitting semiconductor crystal grain of vertical stratification; For example in order to encapsulate the base plate for packaging of vertical type light emitting diode crystal grain; Make this first bronze medal layer and the insulation of this second bronze medal layer through this second ceramic layer; And this first pattern and this second pattern are respectively circuit pattern; Can supply semiconductor grain with the COB packaged type, the one of which electrode directly is electrically connected with this first bronze medal layer, and another electrode directly is electrically connected with this second bronze medal layer; And the predeterminated position that provides outer lead to be electrically connected on this first pattern and this second pattern through this first bronze medal layer and this second bronze medal layer, but so that should be electrically connected with external circuit formation by emitting semiconductor crystal grain.And, but should can directly be fixedly arranged on this first bronze medal layer through this perforation by emitting semiconductor crystal grain, through this first bronze medal layer heat conduction to this first ceramic layer and this back side copper layer, to increase heat dissipation.Perhaps, but should this conducting block can be fixedly arranged on by emitting semiconductor crystal grain, but the distance that this emitting semiconductor crystal grain routing connects this second bronze medal layer can be shortened through this conducting block.
According to another aspect of the present invention, the method for making of multiple field base plate for packaging of the present invention, key step comprises: prepare one first lamination unit, preparation one second lamination unit and heat treatment and engage this first lamination unit and this second lamination unit.The step that wherein prepares this first lamination unit comprises: provide one be coated with one first bronze medal layer first ceramic layer; And this first bronze medal layer of patterning, to form one first pattern and a plurality of first location division.The step for preparing this second lamination unit comprises: provide a two sides to be coated with second ceramic layer of one second a bronze medal layer and a bottom surface copper layer respectively; This second bronze medal layer of patterning is to form one second pattern; This bottom surface copper layer of patterning is to form respectively and corresponding a plurality of second location divisions, said first location division; And this second ceramic layer of cutting, forming at least one perforation, and should perforation corresponding to the subregion of this first bronze medal layer.Match with said second location division through said first location division, with this first lamination unit and this second lamination unit relative positioning, and heat-treat, it is fixing that this first lamination unit is engaged with this second lamination unit.
Further, the method for making of this multiple field base plate for packaging also comprises preparation one conducting block, and this conducting block is electrically connected on the step of this first bronze medal layer, and this conducting block joins through this perforation and this first bronze medal layer.Preferably, this conducting block is a copper billet, and in this heat treatment step, engages with this first bronze medal layer.
The method for making of multiple field base plate for packaging of the present invention, corresponding respectively this first location division be groove and respectively this second location division be projection.
The method for making of multiple field base plate for packaging of the present invention, corresponding respectively this first location division is respectively a groove with this second location division respectively, and through a ceramic or reference column relative positioning made of copper.
The method for making of multiple field base plate for packaging of the present invention, this first lamination unit are with after this second lamination unit engages, and this first bronze medal layer of part is exposed by this perforation.
The method for making of multiple field base plate for packaging of the present invention, the another side of this first ceramic layer also are coated with a back side copper layer.
According to the present invention on the other hand, but the encapsulating structure of the present invention's emitting semiconductor, but comprise a foregoing multiple field base plate for packaging and an emitting semiconductor crystal grain.But should emitting semiconductor crystal grain can directly be fixedly arranged on this first bronze medal layer or this conducting block, and have one first electrode and be electrically connected, and reach one second electrode and be electrically connected with this second bronze medal layer with the routing mode with this first bronze medal layer or this conducting block.
But multiple field base plate for packaging of the present invention can supply emitting semiconductor crystal grain directly to set firmly; Shorten the heat transfer distances of crystal grain and base plate for packaging, can increase area of dissipation, and be directly to engage between the first bronze medal layer, first ceramic layer and the back side copper layer through the first bronze medal layer; Can reduce the thermal impedance of scolder or heat-conducting cream; Improve heat dissipation, moreover, preferable thermal endurance and structural strength had with first ceramic layer as insulating barrier; Overheating deforming can be avoided, the user demand of High Power LED can be met.
Description of drawings
Fig. 1 is in the first preferable enforcement of explanation multiple field base plate for packaging of the present invention and method for making thereof, makes the sketch map of the implementation step of the first lamination unit.
Fig. 2 and Fig. 3 are the sketch mapes of making the implementation step of the second lamination unit in this first preferred embodiment of explanation.
Fig. 4 is the sketch map that this first lamination unit of explanation engages with this second lamination unit.
But Fig. 5 is the sketch map of first preferred embodiment of the encapsulating structure of explanation the present invention emitting semiconductor.
Fig. 6 is the sketch map of the second preferable enforcement of explanation multiple field base plate for packaging of the present invention and method for making thereof.
But Fig. 7 is the sketch map of second preferred embodiment of the encapsulating structure of explanation the present invention emitting semiconductor.
Embodiment
Below in conjunction with accompanying drawing and embodiment the present invention is elaborated.
Before the present invention is described in detail, be noted that in following description similar elements is to represent with identical numbering.
Consult Fig. 1 to Fig. 4, first preferred embodiment of multiple field base plate for packaging of the present invention and method for making thereof is described.
The method for making of multiple field base plate for packaging 100 at first is described; Its key step comprises: prepare earlier one first lamination unit 1 (consulting Fig. 1) and one second lamination unit 2 (consulting Fig. 2 and Fig. 3) respectively; Again the first lamination unit 1 is engaged with the second lamination unit 2 and fix, form multiple field base plate for packaging 100 (consulting Fig. 4).Step-by-step procedures is following:
As shown in Figure 1, the step for preparing the first lamination unit 1 comprises:
Provide one be coated with one first bronze medal layer 11 first ceramic layer 12; In the present embodiment; The another side of first ceramic layer 12 also is coated with a back side copper layer 13, is the ceramic layer of double-sided copper-clad, and wherein first ceramic layer 12 is directly to engage with sintering with the first bronze medal layer 11 and back side copper layer 13.The ceramic layer of double-sided copper-clad can be buied or self manufacture by the commercial goods.A desirable ceramic layer and two bronze medal layers utilize direct copper joining technique during self manufacture, with two bronze medal layers and ceramic layer sinter bonded, are not emphasis of the present invention owing to make the technology of the ceramic layer of double-sided copper-clad, repeat no more in this.
Then, the patterning first bronze medal layer 11 is to form one first pattern 11 ' and a plurality of first location division 111.In the present embodiment; First location division 111 is a groove; And the mode of the patterning first bronze medal layer 11 is to utilize like liquid photosensitive processing procedure common in wiring board (PCB) processing procedure or circuit ink printing processing procedure; On the first bronze medal layer 11, define predetermined pattern, again with etch process, remove the part the first bronze medal layer 11 and with the first bronze medal layer, 11 patterning.With the method for copper patterned has been mature technique, so no longer detail.
Like Fig. 2 and shown in Figure 3, the step for preparing the second lamination unit 2 comprises:
Second ceramic layer 22 that provides a two sides to be coated with one second a bronze medal layer 21 and a bottom surface copper layer 23 respectively, wherein second ceramic layer 22 is directly to engage with sintering with the second bronze medal layer 21 and bottom surface copper layer 23.
Then; The difference patterning second bronze medal layer 21; Forming one second pattern 21 ' (shown in the last figure among Fig. 3), and patterning bottom surface copper layer 23, to form respectively and 111 corresponding a plurality of second location divisions 231 (shown in the figure below among Fig. 2), said first location division.In the present embodiment; The projection of second location division 231 for matching with the groove shapes of first location division 111, for example groove can be circle, square or triangle etc., and projection is the circle that matches, square or triangle; And the thickness of projection and the degree of depth of groove are roughly the same; Or the thickness of projection is slightly less than the degree of depth of groove, so that the first bronze medal layer, 11 surface can contact with second ceramic layer, 22 surfaces (surface that exposes after copper layer 23 etching of bottom surface), and has the preferred positioning effect.Though; Second location division 231 of present embodiment is a projection, and still second location division 231 also can be and first location division, 111 corresponding grooves, that is; The etching area and the present embodiment of bottom surface copper layer 23 are opposite; And the zone of etching second location division 231 only, with first location division 111 and second location division, 231 relative positionings, promptly the reference column shape matches with groove through a ceramic or reference column made of copper (figure does not show) again; Can earlier reference column be inserted one of them of first location division 111 or second location division 231, form projection as present embodiment.In addition, the mode of patterning second bronze medal layer 21 and bottom surface copper layer 23, equally as previously mentioned, liquid photosensitive processing procedure capable of using or circuit ink printing processing procedure cooperate etch process to implement.
After accomplishing the step of patterning second bronze medal layer 21 and bottom surface copper layer 23, cut second ceramic layer 22, to form a perforation 221 (shown in figure below among Fig. 3).In the present embodiment; During the patterning second bronze medal layer 21 with the copper layer etching of predetermined cuts perforation 221; Make second ceramic layer 22 of this presumptive area exposed, utilize laser cutting second ceramic layer 22 to bore a hole 221 again, and make perforation 221 be arranged in the zone that second pattern 21 ' distributes to form.And 221 subregions corresponding to the first bronze medal layer 11 of boring a hole, when second ceramic layer 22 was stacked and placed on first pattern 11 ', perforation 221 can be positioned at the zone that first pattern 11 ' distributes, and the part first bronze medal layer 11 is exposed by perforation 221.The second bronze medal layer 21 around perforation 221 contacts with the first bronze medal layer 11, and the scope of perforation 221 is slightly less than this presumptive area, makes perforation 221 be the second exposed ceramic layer 22 on every side, to guarantee the second bronze medal layer 21 and 11 insulation of the first bronze medal layer.Though present embodiment is only established a perforation 221, also can a plurality of perforation be set according to user demand, does not exceed with present embodiment.
As shown in Figure 4; Match with said second location division 231 through said first location division 111, with the first lamination unit 1 and the second lamination unit, 2 relative positionings, the second lamination unit 2 is stacked and placed on behind the first lamination unit 1 not can slide relative; In the present embodiment; The area of the first lamination unit 1 is greater than the second lamination unit 2, and the contour shape of the second lamination unit 2 is roughly corresponding with first pattern 11 ', when making the second lamination unit 2 be stacked and placed on the first lamination unit 1; Can be most of overlapping with first pattern 11 ' (the first bronze medal layer 11); And the exposed surfaces of second ceramic layer 22 are contacted with the first bronze medal layer 11, but first pattern 11 ' still has and partly can be exposed to outside the second lamination unit, 2 region covered, with as the contact that is connected with outer lead.The first lamination unit 1 behind stacked and the relative positioning and the second lamination unit 2 are lower than in the high temperature furnace of 10ppm at oxygen content; Utilize direct copper joining technique (DCB); Be lower than metallic copper fusing point (about 1083 ℃) and be higher than copper and the temperature range of cupric oxide eutectic temperature (1063 ℃) is heat-treated; Make the first bronze medal layer 11 and second ceramic layer 22 produce eutectic bond, the first lamination unit 1 is engaged with the second lamination unit 2 fix, and make multiple field base plate for packaging 100.In the present embodiment, first ceramic layer 12 and second ceramic layer 22 are processed for aluminium oxide.
In other words, the multiple field base plate for packaging 100 of present embodiment comprises: the area of 2, the first lamination unit 1, the second lamination unit on the first lamination unit 1 is located at greater than the second lamination unit 2 in one first lamination unit 1 and.The first lamination unit 1 comprises that one first bronze medal layer 11, one first ceramic layer 12 and a back side copper layer 13, the first bronze medal layer 11 are coated on a surface of first ceramic layer 12, and has one first pattern 11 '.Back side copper layer 13 is coated on another surface of first ceramic layer 12, and is positioned at the opposition side of the first bronze medal layer 11.The second lamination unit 2 comprises one second ceramic layer 22, one second bronze medal layer 21 and a perforation 221.The first bronze medal layer, 11 side are located in the second lamination unit 2, and most of overlapping with first figure 11 ' (the first bronze medal layer 11), but first pattern 11 ' still has part can be exposed to outside the second lamination unit, 2 region covered, with as the contact that is connected with outer lead.Second ceramic layer 22 is between the first bronze medal layer 11 and the second bronze medal layer 21.The second bronze medal layer 21 also has one second pattern 21 ', and bores a hole and 221 be arranged in the zone that is provided with the second bronze medal layer 21, promptly bores a hole 221 to be arranged in the zone that second pattern 21 ' distributes, and 221 the part first bronze medal layer 11 is exposed by perforation 221 through boring a hole.
As shown in Figure 5, but multiple field base plate for packaging 100 can be applicable to the encapsulation of emitting semiconductor crystal grain, the LED crystal particle 3 of vertical stratification for example; LED crystal particle 3 has the first electrode (bottom electrode; Figure does not indicate) and second electrode (top electrode, figure does not indicate), COB packaged type capable of using; LED crystal particle 3 221 directly is fixedly arranged on the first bronze medal layer 11 through boring a hole; First electrode directly is electrically connected with the first bronze medal layer 11, and second electrode is electrically connected with the second bronze medal layer 21, form basic encapsulating structure 200 with the routing mode.Because 22 insulation of second ceramic layer are arranged between the first bronze medal layer 11 and the second bronze medal layer 21, can avoid first electrode and second electric pole short circuit, whereby, utilize the distance of the structure shortening routing of multilayer.And be exposed to the first bronze medal layer 11 outside 2 overlay areas, the second lamination unit, and the second bronze medal layer, 21 exposed regions can make LED crystal particle 3 be electrically connected with external circuit as the contact of outer lead.In addition, because LED crystal particle 3 directly is connected with the first bronze medal layer 11, and the first bronze medal layer 11, first ceramic layer 12 and back side copper layer 13 are direct joint; Can reduce thermal impedance, the heat that makes LED crystal particle 3 produced can conduct to back side copper layer 13 via first ceramic layer 12 apace through 11 diffusion of the first bronze medal layer; Through back side copper layer 13 thermal conductance is gone out outside the encapsulating structure 200 again; And can improve heat dissipation, moreover the insulating barrier of multiple field base plate for packaging 100 (first ceramic layer 12) is a ceramic material; Have preferable structural strength compared to plastic material, can avoid thermal deformation.The encapsulating structure 200 of present embodiment can further be provided with transparent enclosure resin, fluorescence coating, lens etc.; Can adjust according to user demand; And in the present embodiment, the sunk area that the perforation 221 and first bronze medal layer 11 forms can be filled the transparent enclosure resin, can save the step that framework is set.
Consult Fig. 6, second preferred embodiment of multiple field base plate for packaging of the present invention and method for making thereof is described.Second preferred embodiment and first preferred embodiment are roughly the same, and only, the multiple field base plate for packaging 100 ' of second preferred embodiment also comprises to be located in the perforation 221 and the conducting block 4 that is electrically connected with the first bronze medal layer 11.In the present embodiment; Conducting block 4 is a copper billet, is to be prepared into suitable shapes in advance, can be placed in the perforation 221; And do not contact with the second bronze medal layer 21; Utilize in the step that heat treatment engages in the first lamination unit 1 and the second lamination unit 2 again, place perforation 221 in the lump, engage and be electrically connected with the first bronze medal layer 11 with the first bronze medal layer 11 through heat treatment.Conducting block 4 still also can be a little more than the second bronze medal layer 21 or a little less than the second bronze medal layer 21 and unrestricted with preferable with the second bronze medal layer, 21 copline.
Consult Fig. 7, with first preferred embodiment likewise, but the multiple field base plate for packaging 100 ' of second preferred embodiment also can be applicable to the encapsulation of emitting semiconductor crystal grain, equally the LED crystal particle 3 with vertical stratification is the example explanation.In the present embodiment; LED crystal particle 3 is directly to be fixedly arranged on conducting block 4; First electrode (figure does not indicate) is electrically connected with conducting block 4; And be electrically connected with the first bronze medal layer 11 through conducting block 4, and second electrode is electrically connected with the second bronze medal layer 21 with the routing mode, form basic encapsulating structure 200 '.Because the conducting block 4 and the second bronze medal layer 21 be copline roughly, can more shorten the distance of routing.And conducting block 4 is to engage with the first bronze medal layer, 11 eutectic; Can avoid the thermal impedance of scolder or heat-conducting cream; Can the heat that LED crystal particle 3 produces be directly conducted to the first bronze medal layer 11, and, also can improve heat dissipation via first ceramic layer 12 and 13 heat radiation of back side copper layer.
In sum; Multiple field base plate for packaging 100,100 ' of the present invention can supply LED crystal particle 3 to encapsulate with the COB packaged type; Can reduce the thermal impedance number of plies, improve heat dissipation, and can have preferable structural strength; To avoid base plate for packaging 100,100 ' overheating deforming, so can reach the object of the invention really.
Claims (15)
1. a multiple field base plate for packaging is characterized in that, this multiple field base plate for packaging comprises: one first lamination unit and one second lamination unit; This first lamination unit comprises one first ceramic layer and one first bronze medal layer, and this first bronze medal layer is coated on a surface of this first ceramic layer, and has one first pattern; This second lamination unit is located on this first lamination unit; This second lamination unit comprises one second ceramic layer and one second bronze medal layer; This second ceramic layer is between this first bronze medal layer and this second bronze medal layer, and this second bronze medal layer has one second pattern, and this second lamination unit also comprises at least one perforation that runs through this second lamination unit; Through this perforation this first bronze medal layer of part is exposed by this perforation, this perforation is arranged in the zone that is provided with this second pattern.
2. multiple field base plate for packaging according to claim 1 is characterized in that, the area of this first lamination unit is greater than this second lamination unit, and this first bronze medal layer segment is exposed to outside this second lamination unit region covered.
3. multiple field base plate for packaging according to claim 1 is characterized in that, this first lamination unit comprises that also one is coated on another surperficial back side copper layer of this first ceramic layer.
4. according to claim 1 or 2 or 3 described multiple field base plate for packaging, it is characterized in that this multiple field base plate for packaging also comprises to be located in this perforation and the conducting block that is electrically connected with this first bronze medal layer.
5. multiple field base plate for packaging according to claim 4 is characterized in that, this conducting block is a copper billet.
6. multiple field base plate for packaging according to claim 1 is characterized in that, this first lamination unit is directly engaged by heat treatment with this second lamination unit.
7. the method for making of a multiple field base plate for packaging is characterized in that, the method for making of this multiple field base plate for packaging comprises:
Prepare one first lamination unit, step comprises:
Provide one be coated with one first bronze medal layer first ceramic layer; And
This first bronze medal layer of patterning is to form one first pattern and a plurality of first location division;
Prepare one second lamination unit, step comprises:
Provide a two sides to be coated with second ceramic layer of one second a bronze medal layer and a bottom surface copper layer respectively;
This second bronze medal layer of patterning is to form one second pattern;
This bottom surface copper layer of patterning is to form respectively and corresponding a plurality of second location divisions, said first location division; And
Cut this second ceramic layer, forming at least one perforation, and should perforation corresponding to the subregion of this first bronze medal layer; And
Match with said second location division through said first location division, with this first lamination unit and this second lamination unit relative positioning, and heat-treat, it is fixing that this first lamination unit is engaged with this second lamination unit.
8. the method for making of multiple field base plate for packaging according to claim 7 is characterized in that, corresponding respectively this first location division be groove and respectively this second location division be projection.
9. the method for making of multiple field base plate for packaging according to claim 7 is characterized in that, corresponding respectively this first location division is respectively a groove with this second location division respectively, and through a ceramic or reference column relative positioning made of copper.
10. the method for making of multiple field base plate for packaging according to claim 7 is characterized in that, this first lamination unit is with after this second lamination unit engages, and this first bronze medal layer of part is exposed by this perforation.
11. the method for making of multiple field base plate for packaging according to claim 10; It is characterized in that; The method for making of this multiple field base plate for packaging also comprises preparation one conducting block, and this conducting block is electrically connected on the step of this first bronze medal layer, and this conducting block joins through this perforation and this first bronze medal layer.
12. the method for making of multiple field base plate for packaging according to claim 11 is characterized in that, this conducting block is a copper billet, and in this heat treatment step, engages with this first bronze medal layer.
13. the method for making of multiple field base plate for packaging according to claim 7 is characterized in that, the another side of this first ceramic layer also is coated with a back side copper layer.
But 14. the encapsulating structure of an emitting semiconductor it is characterized in that, but encapsulating structure that should emitting semiconductor comprises: one according to claim 1 or 2 or 3 described multiple field base plate for packaging, but and an emitting semiconductor crystal grain; But should emitting semiconductor crystal grain be fixedly arranged on this first bronze medal layer in this perforation, and have one first electrode and be electrically connected, and reach one second electrode and be electrically connected with this second bronze medal layer with the routing mode with this first bronze medal layer.
But 15. the encapsulating structure of an emitting semiconductor it is characterized in that, but encapsulating structure that should emitting semiconductor comprises: one according to claim 4 or 5 described multiple field base plate for packaging, but and an emitting semiconductor crystal grain; But should emitting semiconductor crystal grain be fixedly arranged on this conducting block, and have one first electrode and be electrically connected, and reach one second electrode and be electrically connected with this second bronze medal layer with the routing mode with this conducting block.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200910136221 CN101877333B (en) | 2009-04-29 | 2009-04-29 | Multilayer packaging substrate, manufacture method thereof, and packaging structure of light-emitting semiconductor |
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| Application Number | Priority Date | Filing Date | Title |
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| CN 200910136221 CN101877333B (en) | 2009-04-29 | 2009-04-29 | Multilayer packaging substrate, manufacture method thereof, and packaging structure of light-emitting semiconductor |
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| CN101877333A CN101877333A (en) | 2010-11-03 |
| CN101877333B true CN101877333B (en) | 2012-05-02 |
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Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6562657B1 (en) * | 2000-08-22 | 2003-05-13 | Charles W. C. Lin | Semiconductor chip assembly with simultaneously electrolessly plated contact terminal and connection joint |
| JP2004327733A (en) * | 2003-04-24 | 2004-11-18 | Kyocera Corp | Method for manufacturing multilayer ceramic wiring board |
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2009
- 2009-04-29 CN CN 200910136221 patent/CN101877333B/en not_active Expired - Fee Related
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6562657B1 (en) * | 2000-08-22 | 2003-05-13 | Charles W. C. Lin | Semiconductor chip assembly with simultaneously electrolessly plated contact terminal and connection joint |
| JP2004327733A (en) * | 2003-04-24 | 2004-11-18 | Kyocera Corp | Method for manufacturing multilayer ceramic wiring board |
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| CN101877333A (en) | 2010-11-03 |
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