CN101853862A - Photoelectric microelectrode array used for artificial retina and manufacturing method thereof - Google Patents
Photoelectric microelectrode array used for artificial retina and manufacturing method thereof Download PDFInfo
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- CN101853862A CN101853862A CN201010163107A CN201010163107A CN101853862A CN 101853862 A CN101853862 A CN 101853862A CN 201010163107 A CN201010163107 A CN 201010163107A CN 201010163107 A CN201010163107 A CN 201010163107A CN 101853862 A CN101853862 A CN 101853862A
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- amorphous silicon
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Abstract
The invention discloses a photoelectric microelectrode array used for an artificial retina, which comprises a transparent substrate (1), a first doped amorphous silicon layer (2), a non-doped amorphous silicon layer (3), a second doped amorphous silicon layer (2), a metal electrode (4), and an insulating medium material (5), wherein the first doped amorphous silicon layer (2), the non-doped amorphous silicon layer (3), the second doped amorphous silicon layer (2) and the metal electrode (4) are grown on the transparent substrate (1) in turn from top to bottom, and the insulating medium material (5) is covered on the surfaces of the transparent substrate (1), the first doped amorphous silicon layer (2), the non-doped amorphous silicon layer (3) and the second doped amorphous silicon layer (2). The photoelectric microelectrode array has comparatively simple structure and process, and simultaneously has complete functions, can provide a micro-array with enough drive current, and has important practical values and industrial prospects.
Description
Technical field
The present invention relates to biomedical engineering field, particularly relate to a kind of photoelectric microelectrode array that is used for artificial retina and preparation method thereof.
Background technology
PVR is an eye disease patient major reason visually impaired, and does not still have the clinical treatment method.Artificial retina prosthese based on micro-processing technology is considered to help this type of patient to recover the preferred plan of eyesight.Wherein two kinds of main flow schemes be the combined type photodiode array (multiphotodiode array, MPDA) and microelectrode array (microelectrode array, MEA).These two kinds of schemes cut both ways: first kind of scheme is converted into the signal of telecommunication by photodiode with the illumination that retina is subjected to.This kind scheme signal strength signal intensity is limited, is not enough to stimulate the retinal neuronal cell reaction, therefore needs extra signal amplification circuit, but system complexity, implantation volume and power consumption all can correspondingly increase.Second kind of scheme, image information directly stimulates retina neural by extra camera collection and input.This kind scheme needs complicated back-up system to finish IMAQ, signal processing, energy and transfer of data, is subject to wiring problem, is difficult to realize high density arrays.Therefore, it is relative with technology simple to manage to prepare structure, and complete function simultaneously can provide the microarray of enough drive currents, becomes to hinder artificial retina and enter medical practical field, really brings into play the problem demanding prompt solution of service function.
In the optoelectronics research field, amorphous silicon causes people's attention gradually.This is a kind of novel guide type material, and the method by plasma enhanced chemical vapor deposition (PECVD) prepares film forming, about 300 ℃ of technological temperature, and prepare the polysilicon needs more than 600 ℃ with low-pressure chemical vapor deposition; And the graphical means and the polysilicon of amorphous silicon are identical.This make it can with MEMS technology and CMOS process compatible, more can on substrates such as glass, process and the softening situation of glass not take place.Moreover, amorphous silicon is reduced by the resistivity after the illumination, this light sensitive characteristic has also caused people's attention, and be used for realizing that " photoelectricity tweezers " catch and migratory cell or nano particle, and, electrochemistry experiment biological in conjunction with other electricity, realize photoelectrophoresis, photoelectricity perforation etc., have a extensive future.
Summary of the invention
(1) technical problem that will solve
The technical problem to be solved in the present invention is to simplify the structure and the technology of photoelectric microelectrode array, make it that enough drive currents can be provided simultaneously.
(2) technical scheme
For solving the problems of the technologies described above, a kind of photoelectric microelectrode array that is used for artificial retina according to embodiment of the present invention is provided, it comprises transparent substrates, grow in the first heavily doped amorphous silicon layer, undoped amorphous silicon layer, second heavily doped amorphous silicon layer and the metal electrode on the described transparent substrates from the bottom to top successively, and the dielectric material that is covered in described transparent substrates, the first heavily doped amorphous silicon layer, undoped amorphous silicon layer and the second heavily doped amorphous silicon laminar surface.
Preferably, the described first heavily doped amorphous silicon layer, undoped amorphous silicon layer, the second heavily doped amorphous silicon layer and the metal electrode that grows in successively on the transparent substrates constitutes cylindric array element.
Preferably, the cross-sectional diameter of described cylindric array element is 100-500 μ m.
Preferably, the thickness of described dielectric material is 500nm-2 μ m.
Preferably, be coated with the transparent indium tin oxide electrode on the described transparent substrates.
Preferably, described metal electrode is a platinum electrode.
Preferably, described transparent substrates is a glass substrate.
Preferably, described transparent substrates is flexible substrate or the substrate with bio-compatibility.
The present invention also provides a kind of manufacture method that is used for the photoelectric microelectrode array of artificial retina, and it comprises step:
S1, the preparation transparent substrates;
S2 at the upper surface of described transparent substrates grow the successively first heavily doped amorphous silicon layer, undoped amorphous silicon layer and the second heavily doped amorphous silicon layer, forms composite bed;
S3 carries out graphical etching to described composite bed, forms dot matrix;
S4 at described transparent substrates and composite bed surface deposition dielectric material, and carries out graphical etching to it, exposes the second heavily doped amorphous silicon layer;
S5, depositing metal electrode above the second heavily doped amorphous silicon layer that exposes in step S4 is finished the making of array element.
Preferably, step S1 also is included in and covers the transparent indium tin oxide electrode on the described transparent substrates.
Preferably, described metal electrode is a platinum electrode.
(3) beneficial effect
The present invention is used for the critical material of the photoelectric microelectrode array of artificial retina by the non-doped amorphous silicon conduct of adopting resistivity and intensity of illumination height correlation, when not having incident illumination, the resistivity of non-doped amorphous silicon is very high, can be not enough to stimulate retinal neuronal cell from the ITO electrode of array bottom through this layer and to arrive the electric current of top platinum electrode extremely faint; When certain unit of array is arrived in illumination, be positioned at the non-doped amorphous silicon resistivity in this unit and obviously reduce, thereby allow bigger electric current process, and arrive platinum electrode, stimulate retinal neuronal cell.Structure of the present invention is relative with technology simple, and complete function simultaneously can provide the microarray of enough drive currents, has important practical value and industrialization prospect.
Description of drawings
Fig. 1 is the structural representation according to the photoelectric microelectrode array that is used for artificial retina of embodiment of the present invention;
Fig. 2 is the manufacture method schematic flow sheet according to the photoelectric microelectrode array that is used for artificial retina of embodiment of the present invention;
Fig. 3 is the operation principle schematic diagram according to the photoelectric microelectrode array that is used for artificial retina of embodiment of the present invention.
Wherein, 1: transparent substrates; 2: first, second heavily doped amorphous silicon layer; 3: undoped amorphous silicon layer; 4: the platinum electrode; 5: the dielectric material; 6: array element; 7: the incident ray that external image produces; 8, power supply; 9, drive the exciting current of nerve cell; 10, the photoelectric microelectrode array that is used for artificial retina.
Embodiment
Below in conjunction with drawings and Examples, the specific embodiment of the present invention is described in further detail.Following examples are used to illustrate the present invention, but are not used for limiting the scope of the invention.
The embodiment of the invention be used for artificial retina photoelectric microelectrode array structure as shown in Figure 1, mainly by the transparent substrates 1 that is coated with transparent indium tin oxide (ITO) electrode, and the first heavily doped amorphous silicon layer 2 formed thereon successively, undoped amorphous silicon layer 3, the second heavily doped amorphous silicon layer 2, platinum electrode 4 and dielectric material 5 are formed.The described first heavily doped amorphous silicon layer 2, undoped amorphous silicon layer 3, the second heavily doped amorphous silicon layer 2 and platinum electrode 4 are formed array element 6, and array element 6 surface coverage have dielectric material 5, but expose platinum electrode 4.Described array element 6 is preferably formed and is that cylindrical structural, its cross-sectional diameter are 100-500 μ m, and the thickness of described dielectric material 5 is preferably 500nm-2 μ m.
The embodiment of the invention is used for the making flow process of photoelectric microelectrode array of artificial retina shown in Fig. 2 (a)-(f).At first, be ready to be coated with the transparent substrates 1 (seeing Fig. 2 (a)) of transparent indium tin oxide (ITO) electrode, grow the successively then first heavily doped amorphous silicon layer 2, undoped amorphous silicon layer 3 and the second heavily doped amorphous silicon layer 2 (seeing Fig. 2 (b)) in the above.Then, the composite bed to first, second heavily doped amorphous silicon layer 2 and undoped amorphous silicon layer 3 carries out graphical etching, formation dot matrix (seeing Fig. 2 (c)).Next,, and it is carried out graphical etching, expose the second heavily doped amorphous silicon layer 2 (seeing Fig. 2 (e)) at surface deposition one deck dielectric material 5 (seeing Fig. 2 (d)).At the top of the second heavily doped amorphous silicon layer 2 depositing metal electrode 4 (seeing Fig. 2 (f)),, finish the making of array element 6 at last, thereby form the photoelectric microelectrode array 10 that the present invention is used for artificial retina as platinum electrode.
The embodiment of the invention be used for artificial retina photoelectric microelectrode array operation principle as shown in Figure 3.During actual the use, this photoelectric microelectrode array 10 can be implanted on the retina or in the layer of retina by operation, the transparent substrates of conduction is connected with a simple power supply 8 powers, and the platinum electrode will directly contact retinal neuronal cell, the transmission nerve stimulation signal.When not having incident illumination, the resistivity of non-doped amorphous silicon is very high, therefore can pass through this layer from the bottom transparent substrates, and the exciting current 9 of arrival top platinum electrode is extremely faint, is not enough to stimulate retinal neuronal cell.When incident ray 7 that external image produces shines on some unit of array, the non-doped amorphous silicon resistivity that is positioned at these unit obviously reduces, thereby allow bigger exciting current 9 processes and arrive platinum electrode, and then stimulate retinal neuronal cell, thereby produce visual experience.
Photoelectric microelectrode array of the present invention only uses the drive current of simple power supply power supply can enough a stimulation retinal neuronal cell, and do not need complicated signal amplification circuit, reduce system complexity, reduced the implantation volume, also avoided corresponding extra power consumption.This photoelectric microelectrode array does not need complicated supporting back-up system to finish IMAQ, signal processing, energy and transfer of data, does not need addressing, is not subject to corresponding interconnected wiring problem yet.Only need one or two wiring, and irrelevant with array density and resolution, therefore be easy to realize high density arrays, be applied to artificial retina and then can obtain the high image of definition.This photoelectric microelectrode array is not limited to silicon-based substrate, can also and have on the bio-compatibility substrate in glass substrate, flexible substrate to process, and makes its application on biomedicine convenient.This novel photoelectric preparation structure of electrod-array and simple for process that declines, can use under the different occasions of opto-electronic conversion needing, be particularly suitable for the application of artificial retina prosthese IMAQ, can reduce the device fabrication difficulty greatly, finally satisfy the industrialization demand.
The above only is a preferred implementation of the present invention; should be pointed out that for those skilled in the art, under the prerequisite that does not break away from the technology of the present invention principle; can also make some improvement and modification, these improve and modification also should be considered as protection scope of the present invention.
Claims (11)
1. photoelectric microelectrode array that is used for artificial retina, it is characterized in that, described photoelectric microelectrode array comprises transparent substrates (1), grow in the first heavily doped amorphous silicon layer (2), undoped amorphous silicon layer (3), the second heavily doped amorphous silicon layer (2) and metal electrode (4) on the described transparent substrates (1) from the bottom to top successively, and the dielectric material (5) that is covered in described transparent substrates (1), the first heavily doped amorphous silicon layer (2), undoped amorphous silicon layer (3) and the second heavily doped amorphous silicon layer (2) surface.
2. the photoelectric microelectrode array that is used for artificial retina as claimed in claim 1, it is characterized in that the described first heavily doped amorphous silicon layer (2), undoped amorphous silicon layer (3), the second heavily doped amorphous silicon layer (2) and the metal electrode (4) that grows in successively on the transparent substrates (1) constitutes cylindric array element (6).
3. the photoelectric microelectrode array that is used for artificial retina as claimed in claim 2 is characterized in that, the cross-sectional diameter of described cylindric array element (6) is 100-500 μ m.
4. the photoelectric microelectrode array that is used for artificial retina as claimed in claim 1 is characterized in that, the thickness of described dielectric material (5) is 500nm-2 μ m.
5. the photoelectric microelectrode array that is used for artificial retina as claimed in claim 1 is characterized in that, described transparent substrates is coated with the transparent indium tin oxide electrode on (1).
6. as each described photoelectric microelectrode array that is used for artificial retina of claim 1-5, it is characterized in that described metal electrode (4) is a platinum electrode.
7. as each described photoelectric microelectrode array that is used for artificial retina of claim 1-5, it is characterized in that described transparent substrates (1) is a glass substrate.
8. as each described photoelectric microelectrode array that is used for artificial retina of claim 1-5, it is characterized in that described transparent substrates (1) is flexible substrate or the substrate with bio-compatibility.
9. a manufacture method that is used for the photoelectric microelectrode array of artificial retina is characterized in that, described method comprises step:
S1, preparation transparent substrates (1);
S2 at the upper surface of described transparent substrates (1) grow the successively first heavily doped amorphous silicon layer (2), undoped amorphous silicon layer (3) and the second heavily doped amorphous silicon layer (2), forms composite bed;
S3 carries out graphical etching to described composite bed, forms dot matrix;
S4 at described transparent substrates (1) and composite bed surface deposition dielectric material (5), and carries out graphical etching to it, exposes the second heavily doped amorphous silicon layer (2);
S5, depositing metal electrode (4) above the second heavily doped amorphous silicon layer (2) that exposes in step S4 is finished the making of array element (6).
10. the manufacture method that is used for the photoelectric microelectrode array of artificial retina as claimed in claim 9 is characterized in that, step S1 also is included in described transparent substrates (1) and goes up covering transparent indium tin oxide electrode.
11., it is characterized in that described metal electrode (4) is a platinum electrode as claim 9 or the 10 described manufacture methods that are used for the photoelectric microelectrode array of artificial retina.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105496643A (en) * | 2016-01-18 | 2016-04-20 | 戴国群 | Intelligent wearing device for vision recovery of patient with posteriority blindness and making method thereof |
| CN110215606A (en) * | 2019-06-25 | 2019-09-10 | 武汉华星光电技术有限公司 | A kind of artificial retina neural flexible micro-electrode device and preparation method thereof |
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| US5016633A (en) * | 1989-08-08 | 1991-05-21 | Chow Alan Y | Artificial retina device |
| CN101006953A (en) * | 2007-01-18 | 2007-08-01 | 上海交通大学 | Artificial retina neural flexible microelectrode array chips and processing method thereof |
| CN101548912A (en) * | 2009-04-24 | 2009-10-07 | 中国人民解放军第三军医大学 | Flexible micro-electrode chip stimulating visual cortex through dura mater and the preparation method thereof |
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2010
- 2010-04-29 CN CN201010163107A patent/CN101853862A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5016633A (en) * | 1989-08-08 | 1991-05-21 | Chow Alan Y | Artificial retina device |
| CN101006953A (en) * | 2007-01-18 | 2007-08-01 | 上海交通大学 | Artificial retina neural flexible microelectrode array chips and processing method thereof |
| CN101548912A (en) * | 2009-04-24 | 2009-10-07 | 中国人民解放军第三军医大学 | Flexible micro-electrode chip stimulating visual cortex through dura mater and the preparation method thereof |
Non-Patent Citations (2)
| Title |
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| 《Proceedings of the 2010 5th IEEE International Conference on Nano/Micro Engineered and Molecular Systems》 20100123 Xinyi Zhang et al A Conceptual Prototype of the Light Switchable Microelectrode Array (LSMA) for Retinal Prosthesis 正文第Ⅱ部分和第Ⅲ部分、附图2和3 1-11 , 2 * |
| 《Transducers 2009》 20090625 Xianju Huang et al Fabrication of Flexible 3D Microelectrode Array with Parylene-based Pattern Transfer Technique 全文 1-11 , 2 * |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105496643A (en) * | 2016-01-18 | 2016-04-20 | 戴国群 | Intelligent wearing device for vision recovery of patient with posteriority blindness and making method thereof |
| CN105496643B (en) * | 2016-01-18 | 2017-05-31 | 戴国群 | Acquired blindness patient visual recovers lost eyesight intelligent object wearing device and its manufacture method |
| CN110215606A (en) * | 2019-06-25 | 2019-09-10 | 武汉华星光电技术有限公司 | A kind of artificial retina neural flexible micro-electrode device and preparation method thereof |
| WO2020258641A1 (en) * | 2019-06-25 | 2020-12-30 | 武汉华星光电技术有限公司 | Artificial retinal nerve flexible microelectrode device and method for fabrication thereof |
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Application publication date: 20101006 |