CN101847620B - 功率模块 - Google Patents

功率模块 Download PDF

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Publication number
CN101847620B
CN101847620B CN2009102051971A CN200910205197A CN101847620B CN 101847620 B CN101847620 B CN 101847620B CN 2009102051971 A CN2009102051971 A CN 2009102051971A CN 200910205197 A CN200910205197 A CN 200910205197A CN 101847620 B CN101847620 B CN 101847620B
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China
Prior art keywords
metal piece
screw
cooling power
power block
terminal
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Expired - Fee Related
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CN2009102051971A
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CN101847620A (zh
Inventor
筱原利彰
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Mitsubishi Electric Corp
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Mitsubishi Electric Corp
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Abstract

本发明的目的在于提供降低了电阻和热阻的功率模块。本发明以上部金属块和下部金属块夹入功率元件的表面电极和背面电极,具备:上部冷却通电块,其与该上部金属块的上表面连接,具有散热功能和导电性;下部冷却通电块,其与该下部金属块的下表面连接,具有散热功能和导电性。本发明的特征在于,具备:绝缘盒,其与该上部冷却通电块和该下部冷却通电块离开规定间隔,以与该上部冷却通电块连接的上部端子和与该下部冷却通电块连接的下部端子的一部分露出的方式,覆盖该功率元件、该上部金属块、该下部金属块、该上部冷却通电块、该下部冷却通电块。

Description

功率模块
技术领域
本发明涉及在内部具备功率元件的冷却单元的功率模块。
背景技术
IGBT(Insulated Gate Bipolar Transistor,绝缘栅双极晶体管)或功率MOSFET等的功率元件适合于高耐压、大电流的利用,在产业用、民生用设备等中具有广泛的用途。由于这样的功率元件是控制大电流的元件,所以优选在连接功率元件和外部的通路中电阻较低。此外,由于功率元件也是发热体,所以优选是能够降低功率模块的热阻、将在功率模块产生的热迅速地向模块的外部排出的结构。
在专利文献1中公开了一种以块状的引线夹入功率元件的上下的方式配置的结构。通过这样的结构,能够实现功率模块的电阻的降低。
专利文献1:日本专利申请特开2007-281274号公报
专利文献2:日本专利申请特开2008-124430号公报
专利文献3:日本专利申请特开2001-230582号公报
本发明要解决的课题
图7是对典型的功率模块的结构进行说明的图。在图7所示的典型的功率模块中,在作为绝缘基板的、表面形成有导体图案的陶瓷608的表面,经由软钎料612搭载有IGBT602和二极管604。金属线606适当地在IGBT602和二极管604的电极、和端子618之间连接。端子618被安装在树脂盒601,连接IGBT602等和外部。另一方面,在陶瓷608的背面,经由软钎料610连接有被称为底板614的金属板。而且,在树脂盒601的开口配置盖子616,形成功率模块600。
功率模块600能够经由底板614进行散热,但由于仅以该方式散热(冷却)特性不充分,所以隔着冷却油(cooling grease)704将底板614与散热片702连接的情况较多。在图7中以箭头说明该连接的样子。
在图7那样的具有散热片702的功率模块中,存在不能够降低电阻和提高散热性的问题。即,由于在布线中使用金属线606和陶瓷608上的导体图案,存在不能够降低功率模块的电阻的问题。此外,IGBT602等的元件发出的热的散热通路成为陶瓷608、软钎料610、底板614、冷却油704、散热片702,存在热阻较高,不能够对作为功率元件的IGBT等充分地进行通电的问题。
进而,即使是专利文献1中记载的结构,虽然能够降低电阻,但依然存在散热特性不充分的问题。此外,由于引线在大范围从树脂表面露出,所以存在引线绝缘的确保不充分的问题。
发明内容
本发明正是为了解决上述问题而完成的,其目的在于提供一种能够降低电阻,同时也能够降低热阻的功率模块。
用于解决课题的方法
本申请的发明的功率模块,具有:功率元件,其在表面具有表面电极,在背面具有背面电极;上部金属块,其下表面与该表面电极连接;下部金属块,其上表面与该背面电极连接;树脂,以使该上部金属块的上表面和该下部金属块的下表面露出的方式,覆盖该功率元件和该上部金属块和该下部金属块;上部冷却通电块,与该上部金属块的上表面连接,具有散热功能和导电性;下部冷却通电块,与该下部金属块的下表面连接,具有散热功能和导电性;上部端子,与该上部冷却通电块连接,连接该表面电极和外部;以及下部端子,与该下部冷却通电块连接,连接该背面电极和外部。而且,该功率模块的特征在于,具备:绝缘盒,其与该上部冷却通电块和该下部冷却通电块离开规定间隔,以该上部端子和该下部端子的一部分露出的方式,覆盖该功率元件和该上部金属块和该下部金属块和该树脂和该上部冷却通电块和该下部冷却通电块和该上部端子和该下部端子。
发明的效果
根据本发明,能够制造降低了电阻和热阻的功率模块。
附图说明
图1是对实施方式1的功率模块进行说明的图。
图2是图1的II-II向视图。
图3是对在实施方式1的结构中安装了电扇的结构进行说明的图。
图4是对实施方式2的功率模块进行说明的图。
图5是对不需要绝缘套筒而能够螺丝固定的结构进行说明的图。
图6是对螺丝固定功率元件和上部(下部)金属块的结构进行说明的图。
图7是说明问题的图。
附图标记说明
10功率模块
12第一功率元件
16集电极电极
18发射极电极
28上部金属块
30下部金属块
34P端子用冷却通电块
36N端子用冷却通电块
38AC输出端子用冷却通电块
60AC输出端子
62P端子
64N端子
具体实施方式
实施方式1
参照图1~图3对本实施方式进行说明。再有,对相同材料或相同、对应的结构要素赋予相同的符号,省略多次说明。关于其他的实施方式也是同样。
本实施方式的功率模块10构成为,绝缘盒66覆盖由功率元件和金属块等构成的结构物。图1是对这样的功率模块的绝缘盒66的内部可视化地进行表现的图。
本实施方式是具备第一功率元件12、第二功率元件40和二极管26、二极管42的结构,例如是构成输出逆变器电路的UVW相的任何一个的桥臂的功率模块。首先对第一功率元件12的周围进行说明。第一功率元件12在表面具有发射极电极18和栅极电极14,在背面具有集电极电极16。发射极电极18和二极管26表面通过软钎料24与上部金属块28连接。此外,集电极电极16和二极管26背面通过软钎料24与下部金属块30连接。上部金属块28和下部金属块30均是铜块。此外,栅极电极14经由金属线20与信号端子22连接。
第一功率元件12、二极管26、上部金属块28、下部金属块30被环氧树脂等的树脂32密封。该树脂密封以使上部金属块28的上表面和下部金属块30的下表面向外部露出的方式进行。
从树脂32露出的上部金属块28的上表面与AC输出端子用冷却通电块38经由软钎料24连接。AC输出端子用冷却通电块38由铝或铜等金属构成,是具备散热片的块。AC输出端子用冷却通电块38除了与上部金属块28连接的面以外与空气接触。在AC输出端子用冷却通电块38连接有AC输出端子60,该AC输出端子60对与发射极电极18连接的上部金属块28和外部进行电连接。
另一方面,从树脂32露出的下部金属块30的下表面与P端子用冷却通电块34经由软钎料24连接。P端子用冷却通电块34由铝或铜等金属构成,是具备散热片的块。P端子用冷却通电块34除了与下部金属块30连接的面以外与空气接触。在P端子用冷却通电块34连接有P端子62,该P端子62对与集电极电极16连接的下部金属块30和外部进行电连接。
第二功率元件40也与上述的第一功率元件12周围是基本同等的结构,以下述方式配置。第二功率元件40的集电极电极和二极管42表面经由软钎料与上部金属块44连接。第二功率元件40的发射极电极和二极管42背面经由软钎料与下部金属块46连接。与第一功率元件12的情况同样地,通过树脂48以使上部金属块44的上表面和下部金属块46的下表面露出的方式对第二功率元件40等进行树脂密封。再有,第二功率元件40的栅极电极通过金属线50与信号端子52连接。进而,上部金属块44的上表面经由软钎料与AC输出端子用冷却通电块38连接。在下部金属块46的下表面经由软钎料连接有N端子用冷却通电块36。N端子用冷却通电块36与P端子用冷却通电块34同样地是具备散热片的结构。
再有,施加高电压的部位间以确保规定的空间距离、沿面距离的方式来决定尺寸,因此对应于需要通过绝缘材料33的涂覆或绝缘材料的插入进行绝缘。
本实施方式的功率模块10还具备绝缘盒66。绝缘盒66以仅使信号端子22、52、AC输出端子60、P端子62、N端子64向外部露出的方式,覆盖第一功率元件12和AC输出端子用冷却通电块38等。本实施方式的绝缘盒66例如以包含PPS、PBT、PET的材料形成。而且,绝缘盒66在内壁具备金属板67。该金属板67为了屏蔽对第一功率元件12和第二功率元件40的噪声而配置。
绝缘盒66和金属板67以注意以下两点并具有规定的空气层68的方式配置。第一点是绝缘盒66和金属板67为了与AC输出端子用冷却通电块38、P端子用冷却通电块34、N端子用冷却通电块36绝缘,隔开充分的空间距离这一点。第二点是为了使AC输出端子用冷却通电块38、P端子用冷却通电块34、N端子用冷却通电块36空气冷却,绝缘盒66和金属板67与这些部件隔开充分的空间距离而配置这一点。
图2是图1的II-II向视图。从图2可知,在绝缘盒66中形成有第一通气孔70、和在与该第一通气孔70相向的位置形成有第二通气孔72。这些通气孔为了将绝缘盒66内部的空气层68的过热的空气向外部排出而形成。本实施方式的功率模块具备上述结构。
功率模块如上述那样,优选向功率元件的通电通路的电阻低,并且为了使在功率元件产生的热迅速向外放出而热阻低。本实施方式的结构能够以简易的结构实现功率模块的低电阻化和低热阻化。
首先,对低电阻化进行说明。第一功率元件12的主电流通过的发射极电极18和集电极电极16分别与上部金属块28和下部金属块30连接。上部金属块28经由AC输出端子用冷却通电块38向AC输出端子60连接,下部金属块30经由P端子用冷却通电块34向P端子62连接。由此,与以金属线和陶瓷上导体图案等进行布线的情况相比较能够实现主电流通路的低电阻化。关于第二功率元件40也是同样。
另一方面,低热阻化是通过从AC输出端子用冷却通电块38、P端子用冷却通电块34、N端子用冷却通电块36的散热而带来的效果。在本实施方式中,不配置对功率元件的低热阻化进行阻碍的陶瓷(绝缘基板)。进而,在第一功率元件12、第二功率元件40产生的热经由软钎料和上部金属块28或下部金属块30,向AC输出端子用冷却通电块38、或P端子用冷却通电块34、N端子用冷却通电块36传导。由此,在功率元件产生的热迅速地通过AC输出端子用冷却通电块38、或P端子用冷却通电块34、N端子用冷却通电块36具备的散热片向外部放出,因此能够实现低热阻化。此外,通过省略陶瓷(绝缘基板),能够实现功率模块的制造成本降低。
进而,在本实施方式的功率模块中,空气层68和绝缘盒66作为功率模块10的隔热层而发挥功能,所以从操作的安全的观点出发是优选的。
进而,在本实施方式的功率模块中,由第一、第二功率元件12、40和二极管26、42和上部金属块28、44,下部金属块30、46构成的功率部分别被树脂32、48覆盖。由此,能够降低在功率模块工作时向软钎料施加的热应力,能够提高对冷热循环或功率循环的耐久性。因此能够制造可靠性高的功率模块。
进而,在本实施方式的功率模块中,为了对发射极电极、集电极电极进行通电,使用上部金属块28、44,下部金属块30、46,AC输出端子用冷却通电块38,P端子用冷却通电块34,N端子用冷却通电块36。由此能够使功率元件的驱动所必要的布线简洁化。
进而,本实施方式的功率模块在功率模块的内部具备:具备对功率元件进行冷却的散热片的AC输出端子用冷却通电块38、P端子用冷却通电块34、N端子用冷却通电块36。由此,例如在图7说明的那样,能够省略用户安装散热片702等的作业。
像这样,金属块和冷却通电用块以夹入功率元件的表面电极和背面电极的方式配置,通过这些部件作为通电通路而发挥功能,与利用金属板的布线相比,能够谋求功率模块的低电阻化。此外,本实施方式的特征在于,通过使用具有通电功能和散热功能(冷却功能)的冷却通电块,以简洁的结构谋求功率模块的低热阻化。而且,只要不脱离本发明的范围能够有各种各样的变形。以下,对这样的变形进行例示。
在本实施方式中,如参照图2进行说明的那样,为了排出空气层68内的过热的空气,采用具备第一通气孔70和第二通气孔72的结构,但本发明并不限定于此。如图3所示,为了促进空气层68内的过热的空气的排出,当与通气孔相接安装具有散热片82的电扇80时,能够进一步提高功率元件的冷却效果。
在本实施方式中,AC输出端子用冷却通电块38和P端子用冷却通电块34、N端子用冷却通电块36具备散热片来提高功率元件的冷却效果,但本发明并不局限于此。作为冷却介质使用空气,但除此之外以不影响功率元件的电气特性的方式使用被绝缘的液状介质进行功率元件的冷却也可。
在本实施方式中绝缘盒66是在内壁具备金属板67的结构,但本发明并不限定于此。即,盒也可以是在绝缘盒66的内壁具备金属板67,进而在金属板67的内壁具备绝缘盒的三层结构。此外,如果不需要屏蔽对第一功率元件12和第二功率元件40的噪声的话,是绝缘盒66单体也可。
此外,上部金属块28、44,下部金属块30、46,AC输出端子用冷却通电块38,P端子用冷却通电块34,N端子用冷却通电块36只要是导电度高热阻低的材料的话就没有限定,功率模块内包的功率元件也只要是发热体的话就没有限定。
实施方式2
参照图4~图6对本实施方式进行说明。图4是对本实施方式的功率模块进行说明的图。由于本实施方式的功率模块的基本结构与实施方式1相同,所以仅对与实施方式1的结构不同的部分进行说明。
本实施方式的功率模块具备的AC输出端子用冷却通电块110具备2处螺丝用贯通孔101。此外,与所述的螺丝用贯通孔101对应的螺丝孔103在P端子用冷却通电块112和N端子用冷却通电块114分别形成一处。
利用所述螺丝孔103和螺丝用贯通孔101,紧固螺丝102被螺丝固定,利用AC输出端子用冷却通电块110和P端子用冷却通电块112以一定荷重夹入树脂32的上部金属块28的上表面和下部金属块30的下表面。这里,以AC输出端子用冷却通电块110和P端子用冷却通电块112不电导通的方式,紧固螺丝102被绝缘套筒100覆盖而配置。进而,AC输出端子用冷却通电块110和N端子用冷却通电块114也同样地被螺丝固定,以一定荷重夹入树脂48。
通过以该方式使用紧固螺丝102夹入内包有功率元件的树脂32、48,能够不使用软钎焊接合进行上部金属块28、44的上表面和AC输出端子用冷却通电块110的连接。下部金属块30下表面和P端子用冷却通电块34的连接、下部金属块46和N端子用冷却通电块114的连接也能够同样地不使用软钎焊接合来进行。
如本实施方式那样,当通过紧固螺丝进行部件间的连接时,以树脂32、48密封的功率部的分解或更换变得容易,材料的循环利用性提高。例如,能够仅更换功率模块的功率部,再次利用其周围的金属块等。
像这样使功率模块的一部分能够分解可以通过各种结构来实现。例如能够举出图5、6公开的结构。
图5中在上部金属块260、262设置螺丝孔250,在AC输出端子用冷却通电块230设置与所述螺丝孔250对应的螺丝用贯通孔204。然后通过利用螺丝孔250和螺丝用贯通孔204对紧固螺丝进行螺丝固定,从而连接上部金属块260、262和AC输出端子用冷却通电块230。
同样地在下部金属块264、266也设置螺丝孔207,在P端子用冷却通电块232和N端子用冷却通电块234设置对应的螺丝用贯通孔210。然后通过利用螺丝孔207和螺丝用贯通孔210对紧固螺丝进行螺丝固定,分别连接下部金属块264和P端子用冷却通电块232,和下部金属块266和N端子用冷却通电块234。
当以图5的方式构成时能够得到与图4的结构同样的效果。此外,与图4的情况进行比较,有能够省略绝缘套筒的优势。
图6是表示第一功率元件12和上部金属块28通过紧固螺丝400连接、第二功率元件40和下部金属块46通过紧固螺丝500连接的例子的图。在图6的功率模块中,不通过树脂对第一功率元件12等进行密封,而以夹具402、502和绝缘材料涂覆520获得功率元件的绝缘。此外,第一功率元件12等在与上部金属块、下部金属块连接的状态下安装有信号端子404、504。信号端子404直接向功率模块外部延伸,信号端子504经由棒状端子506向外部延伸。
在本实施方式中,假设图4的螺丝孔103在P端子用冷却块112(或N端子用冷却块114)形成,螺丝用贯通孔101在AC输出端子用冷却通电块110形成,但使螺丝孔103和螺丝用贯通孔101的形成位置逆转也可。此外,紧固螺丝的数量只要能够得到充分的接合的话没有限定。
在上部金属块28、44和AC输出端子用冷却通电块110之间插入软钎焊材料或铟箔,使热、电连接的稳定性提高也可。即使像这样插入软钎焊材料或铟箔,也不阻碍功率模块的分解性。关于其他的使用了紧固螺丝的连接处也是同样的。
本实施方式和实施方式1的结构中包含的功率元件等也可以在SiC基板上形成。在SiC基板制造功率元件,对于功率模块的高耐压化和大电流化等是有用的。

Claims (9)

1.一种功率模块,其特征在于,具备:
功率元件,其在表面具有表面电极,在背面具有背面电极;
上部金属块,其下表面与所述表面电极连接;
下部金属块,其上表面与所述背面电极连接;
树脂,以使所述上部金属块的上表面和所述下部金属块的下表面露出的方式,覆盖所述功率元件和所述上部金属块和所述下部金属块;
上部冷却通电块,与所述上部金属块的上表面连接,具有散热功能和导电性;
下部冷却通电块,与所述下部金属块的下表面连接,具有散热功能和导电性;
上部端子,与所述上部冷却通电块连接,连接所述表面电极和外部;
下部端子,与所述下部冷却通电块连接,连接所述背面电极和外部;以及
绝缘盒,与所述上部冷却通电块和所述下部冷却通电块离开规定间隔,以使所述上部端子和所述下部端子的一部分露出的方式,覆盖所述功率元件和所述上部金属块和所述下部金属块和所述树脂和所述上部冷却通电块和所述下部冷却通电块和所述上部端子和所述下部端子。
2.根据权利要求1所述的功率模块,其特征在于,所述上部冷却通电块和所述下部冷却通电块具备散热片。
3.根据权利要求1所述的功率模块,其特征在于,在所述绝缘盒形成有通气孔。
4.根据权利要求3所述的功率模块,其特征在于,具备:电扇,其安装在所述绝缘盒的外壁,将所述绝缘盒内的空气通过所述通气孔向所述绝缘盒外部排出。
5.根据权利要求1所述的功率模块,其特征在于,
在所述上部冷却通电块和所述下部冷却通电块的一方形成螺丝孔,在另一方形成与所述螺丝孔对应的螺丝用贯通孔,
该功率模块还具备:紧固螺丝,通过利用所述螺丝孔和所述螺丝用贯通孔的螺丝固定,对以所述树脂覆盖的结构的所述表面电极和所述背面电极进行夹入,
所述上部金属块的上表面和所述上部冷却通电块,以及所述下部金属块的下表面和所述下部冷却通电块,在所述上部金属块的上表面和所述上部冷却通电块直接接触或经由金属箔接触、所述下部金属块的下表面和所述下部冷却通电块直接接触或经由金属箔接触的状态下,被所述螺丝固定而连接。
6.根据权利要求1所述的功率模块,其特征在于,
在所述上部冷却通电块形成第一螺丝用贯通孔,
在所述上部金属块的上表面形成与所述第一螺丝用贯通孔对应的第一螺丝孔,
在所述下部冷却通电块形成第二螺丝用贯通孔,
在所述下部金属块的下表面形成与所述第二螺丝用贯通孔对应的第二螺丝孔,
该功率模块还具备:
第一紧固螺丝,其通过利用了所述第一螺丝用贯通孔和所述第一螺丝孔的螺丝固定,使所述上部金属块的上表面和所述上部冷却通电块直接或经由金属箔进行连接;以及
第二紧固螺丝,其通过利用了所述第二螺丝用贯通孔和所述第二螺丝孔的螺丝固定,使所述下部金属块的下表面和所述下部冷却通电块直接或经由金属箔进行连接。
7.根据权利要求1所述的功率模块,其特征在于,
所述表面电极和所述上部金属块的下表面的连接,或所述背面电极和所述下部金属块的上表面的连接,通过所述功率元件和所述上部金属块的螺丝固定或所述功率元件和所述下部金属块的螺丝固定来进行。
8.根据权利要求1所述的功率模块,其特征在于,具备:
金属板,其在所述绝缘盒的内壁,与所述上部冷却通电块和所述下部冷却通电块设置规定的间隙而配置。
9.根据权利要求1至8的任何一项所述的功率模块,其特征在于,所述功率元件在SiC基板形成。
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Families Citing this family (31)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5381248B2 (ja) * 2009-03-31 2014-01-08 株式会社オートネットワーク技術研究所 電力供給制御装置およびその制御方法
JP5165012B2 (ja) * 2010-02-22 2013-03-21 三菱電機株式会社 樹脂封止形電子制御装置及びその製造方法
JP4948613B2 (ja) * 2010-02-25 2012-06-06 三菱電機株式会社 樹脂封止形電子制御装置、及びその製造方法
JP5588895B2 (ja) * 2011-02-28 2014-09-10 日立オートモティブシステムズ株式会社 パワー半導体モジュール,パワー半導体モジュールの製造方法及び電力変換装置
US8804340B2 (en) * 2011-06-08 2014-08-12 International Rectifier Corporation Power semiconductor package with double-sided cooling
JP5502805B2 (ja) * 2011-06-08 2014-05-28 日立オートモティブシステムズ株式会社 パワーモジュールおよびそれを用いた電力変換装置
JP2014199829A (ja) * 2011-07-29 2014-10-23 三洋電機株式会社 半導体モジュール及びそれを搭載したインバータ
JP5529208B2 (ja) * 2011-08-25 2014-06-25 トヨタ自動車株式会社 パワーモジュールの構造及び成形方法
DE112012005457B4 (de) * 2012-02-14 2018-07-12 Mitsubishi Electric Corporation Halbleitervorrichtung mit elektrisch isolierten Kommunikationsvorrichtungen zur Ansteuerung
KR20140006392A (ko) * 2012-07-05 2014-01-16 엘에스산전 주식회사 자동차용 전장부품 박스
WO2014038000A1 (ja) * 2012-09-04 2014-03-13 株式会社日立製作所 電力変換装置
JP5708613B2 (ja) * 2012-11-01 2015-04-30 株式会社豊田自動織機 モジュール
JP6127948B2 (ja) * 2013-12-05 2017-05-17 株式会社デンソー 電力変換装置
US9584038B2 (en) * 2014-06-02 2017-02-28 Enphase Energy, Inc. Ungrounded inverter enclosure and cabling
JP6299441B2 (ja) * 2014-06-02 2018-03-28 株式会社デンソー 半導体装置
JP6166460B2 (ja) * 2015-04-28 2017-07-19 新電元工業株式会社 半導体モジュール及び半導体モジュールの製造方法
EP3163611B1 (en) * 2015-11-02 2021-06-30 ABB Schweiz AG Power electronic assembly
DE102016110847B4 (de) * 2016-06-14 2022-02-17 Auto-Kabel Management Gmbh Leitungsintegrierter Schalter und Verfahren zum Herstellen eines leitungsintegrierten Schalters
CN109952639B (zh) * 2016-11-11 2023-06-27 三菱电机株式会社 半导体装置、逆变器单元及汽车
JP6991846B2 (ja) * 2017-01-05 2022-01-13 株式会社東芝 半導体装置およびその製造方法
JP2018133448A (ja) * 2017-02-15 2018-08-23 株式会社東芝 半導体装置
JP6818649B2 (ja) 2017-07-25 2021-01-20 株式会社東芝 半導体装置及び半導体素子
US11355419B2 (en) 2018-01-11 2022-06-07 Amosense Co., Ltd. Power semiconductor module
JP2019125721A (ja) * 2018-01-17 2019-07-25 トヨタ自動車株式会社 半導体装置
KR102008209B1 (ko) * 2018-01-22 2019-08-07 제엠제코(주) 가압형 반도체 패키지
KR102048478B1 (ko) * 2018-03-20 2019-11-25 엘지전자 주식회사 양면냉각형 파워 모듈 및 그의 제조 방법
DE102018109920A1 (de) * 2018-04-25 2019-10-31 Dr. Ing. H.C. F. Porsche Aktiengesellschaft Kühlung von leistungselektronischen Schaltungen
JP7159620B2 (ja) * 2018-05-30 2022-10-25 富士電機株式会社 半導体装置、冷却モジュール、電力変換装置及び電動車両
SG10201810791TA (en) * 2018-11-30 2020-06-29 Delta Electronics Int’L Singapore Pte Ltd Package structure and power module using same
JP7095632B2 (ja) * 2019-03-11 2022-07-05 株式会社デンソー 半導体装置
US11158582B2 (en) * 2019-12-04 2021-10-26 Amkor Technology Singapore Holding Pte. Ltd. Semiconductor devices and methods of manufacturing semiconductor devices

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3770192B2 (ja) * 2002-04-12 2006-04-26 松下電器産業株式会社 チップ型led用リードフレーム

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3137407A1 (de) * 1981-09-19 1983-04-07 BBC Aktiengesellschaft Brown, Boveri & Cie., 5401 Baden, Aargau Leistungshalbleiterbauelement fuer siedekuehlung
US6465728B1 (en) * 1998-03-06 2002-10-15 Rockwell Automation Technologies, Inc. Spring clip for electronic device and heat sink assembly
JPH11330283A (ja) * 1998-05-15 1999-11-30 Toshiba Corp 半導体モジュール及び大型半導体モジュール
US6232151B1 (en) * 1999-11-01 2001-05-15 General Electric Company Power electronic module packaging
US6703707B1 (en) * 1999-11-24 2004-03-09 Denso Corporation Semiconductor device having radiation structure
JP2001230582A (ja) 2000-02-15 2001-08-24 Hitachi Ltd 電子機器の冷却構造
EP1742265B1 (en) * 2000-04-19 2013-08-07 Denso Corporation Coolant cooled type semiconductor device
WO2005024941A1 (ja) 2003-09-04 2005-03-17 Matsushita Electric Industrial Co., Ltd. 半導体装置
JP4007304B2 (ja) * 2003-10-14 2007-11-14 株式会社デンソー 半導体装置の冷却構造
JP4438489B2 (ja) 2004-04-13 2010-03-24 富士電機システムズ株式会社 半導体装置
JP4158738B2 (ja) * 2004-04-20 2008-10-01 株式会社デンソー 半導体モジュール実装構造、カード状半導体モジュール及びカード状半導体モジュール密着用受熱部材
JP4225310B2 (ja) * 2004-11-11 2009-02-18 株式会社デンソー 半導体装置
EP1672692B1 (de) * 2004-12-16 2015-01-07 ABB Research Ltd Leistungshalbleiter-Modul
JP2007251076A (ja) 2006-03-20 2007-09-27 Hitachi Ltd パワー半導体モジュール
JP4730181B2 (ja) 2006-04-10 2011-07-20 株式会社デンソー 半導体装置
JP4967447B2 (ja) * 2006-05-17 2012-07-04 株式会社日立製作所 パワー半導体モジュール
JP2008124430A (ja) * 2006-10-18 2008-05-29 Hitachi Ltd パワー半導体モジュール
JP4958735B2 (ja) * 2007-11-01 2012-06-20 株式会社日立製作所 パワー半導体モジュールの製造方法、パワー半導体モジュールの製造装置、パワー半導体モジュール、及び接合方法

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3770192B2 (ja) * 2002-04-12 2006-04-26 松下電器産業株式会社 チップ型led用リードフレーム

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