CN101821857A - 异质结硅太阳能电池及其制造方法 - Google Patents

异质结硅太阳能电池及其制造方法 Download PDF

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CN101821857A
CN101821857A CN200880111068A CN200880111068A CN101821857A CN 101821857 A CN101821857 A CN 101821857A CN 200880111068 A CN200880111068 A CN 200880111068A CN 200880111068 A CN200880111068 A CN 200880111068A CN 101821857 A CN101821857 A CN 101821857A
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高志勋
鱼英株
金真阿
尹周焕
郑一炯
金钟焕
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LG Electronics Inc
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Abstract

公开了一种异质结硅太阳能电池及其制造方法。根据本发明的异质结硅太阳能电池形成晶体硅基板和掺有杂质的钝化层的pn结，以使得电子和空穴的重新组合最小化，从而可以最大化异质结硅太阳能电池的效率。本发明提供一种异质结硅太阳能电池，其包括：晶体硅基板；和形成在所述晶体硅基板上并且掺有杂质的钝化层。

Description

异质结硅太阳能电池及其制造方法
技术领域
本发明涉及异质结硅太阳能电池及其制造方法。更具体地说，本发明涉及如下的异质结硅太阳能电池及其制造方法：其形成晶体硅基板的pn结和掺有杂质的钝化层，以使得电子和空穴的重新组合最小化，使异质结硅太阳能电池的效率最大化。
背景技术
近年来，由于诸如石油价格上升、全球变暖、矿物能源的枯竭、核废料处理、新发电厂的建造所涉及的地点选择等的问题，新形式的可再生能源受到很大关注。其中，已经积极推动作为无污染能量源的太阳能电池的研究和开发。
作为使用光电效应将光能转换为电能的装置的太阳能电池根据构成材料而分类为硅太阳能电池、薄膜太阳能电池、染料敏化太阳能电池、有机聚合物太阳能电池等。太阳能电池独立地用作电子时钟、无线电设备、无人灯塔、人造卫星、火箭等的主电源，并且通过连接到商业交流电源而用作辅助电源。近来，由于对替代能源的需求增加，越来越关注太阳能电池。
在这样的太阳能电池中，很重要的一点是，增加与入射太阳光的被转换为电能的比例相关联的转换效率。已经进行了各种研究来增加转换效率。而且，通过在太阳能电池中包括具有高的光吸收系数的薄膜，已经有效推进了增加转换效率的技术发展。
同时，使用太阳光的太阳能电池根据p-n结所使用的p区域和n区域的特性，可以分类为同质结硅太阳能电池和异质结硅太阳能电池。其中，异质结硅太阳能电池具有不同的晶体结构或者结合了不同材料的一种结构。
图1是示意性地示出根据现有技术的异质结硅太阳能电池的剖面图，其中，它示出了常规异质结硅太阳能电池的基本结构。
参照图1，常规的异质结硅太阳能电池是非晶/晶体pn二极管结构，其中作为发射极的非晶硅(a-Si)层113通过使用等离子体化学汽相淀积(PECVD)而淀积在作为基体的晶体硅(c-Si)基板111上，其中非晶/晶体pn二极管结构的前表面形成有透明导电氧化物(TCO)115，而其后表面形成有由铝(Al)等制成的下电极117。
与常规的扩散型晶体硅太阳能电池相比，由于如图1所示的非晶/晶体异质结硅太阳能电池可以在低温下制造并具有较高的开路电压，因而它引起很大关注。
但是，在异质结硅太阳能电池中，与参照图1描述的其中p型非晶硅层淀积在n型晶体硅基板上的非晶/晶体pn异质结硅太阳能电池相比，其中n型非晶硅层淀积在p型晶体硅基板上的非晶/晶体np异质结硅太阳能电池的结构具有效率较低的问题。此外，由于与常规的扩散型晶体硅太阳能电池的制作相比，非晶/晶体异质结太阳能硅电池的制造需要许多真空淀积装置，所以存在制造时间长并且制造成本高的问题。
发明内容
技术问题
因此，本发明的目的是提供一种异质结硅太阳能电池，其形成晶体硅基板的pn结和掺有杂质的钝化层，以使电子和空穴的重新组合最小化，使得可以最大化异质结硅太阳能电池的效率。
本发明的另一目的是提供一种异质结硅太阳能电池的制造方法，该方法通过在制造异质结硅太阳能电池时按原样使用用于常规扩散型硅太阳能的扩散方法，可以实现作为异质结硅太阳能电池的优点的高开路电压，并可以实现作为常规扩散型硅太阳能电池的优点的高短路电流、填充比、快速处理时间和低制造成本。
技术方案
根据本发明的一方面，提供一种异质结太阳能电池，该异质结太阳能电池包括：晶体硅基板；以及形成在所述晶体硅基板上并且掺有杂质的钝化层。
所述晶体硅基板可以是p型晶体硅基板，并且所述杂质为n型杂质。
所述晶体硅基板可以是n型晶体硅基板，并且所述杂质为p型杂质。
所述钝化层硅可以包括从由氧化硅(SiO2)、碳化硅(SiC)、氮化硅(SiNx)和本征非晶硅组成的组中选择的至少一种。
所述晶体硅基板的下表面可以形成有纹理化结构(texturingstructure)。
所述异质结硅太阳能电池还可以包括：形成在所述晶体硅基板的下部上的电场形成层；和形成在所述电场形成层的下部上的下电极。
所述异质结硅太阳能电池还可以包括形成在所述钝化层的上部上的防反射层。
所述异质结硅太阳能电池在所述钝化层的上部上可以形成有掺杂区、并且在所述晶体硅基板的上部上可以形成有非掺杂区。
在所述异质结硅太阳能电池中，所述钝化层的上部的掺杂浓度可以高于所述晶体硅基板的上部的掺杂浓度。
根据本发明的另一方面，提供一种异质结硅太阳能电池的制造方法，该方法包括以下步骤：(a)在晶体硅基板的上表面上形成钝化层；和(b)对钝化层掺入杂质，以在所述晶体硅基板与所述钝化层之间形成结。
所述晶体硅基板可以是p型晶体硅基板，并且所述杂质可以是n型杂质。
所述晶体硅基板可以是n型晶体硅基板，并且所述杂质是p型杂质。
在步骤(b)中，可以通过如下的扩散方法来进行掺杂，所述扩散方法将其上淀积了所述钝化层的所述晶体硅基板引入炉中，并将杂质注入所述炉的内部。
在步骤(a)中，所述钝化层硅可以包括从由氧化硅(SiO2)、碳化硅(SiC)、氮化硅(SiNx)和本征非晶硅组成的组中选择的至少一种。
所述异质结硅太阳能电池的制造方法在步骤(a)之前还可以包括在所述晶体硅基板的下表面上形成纹理化结构的步骤。
所述异质结硅太阳能电池的制造方法在步骤(b)之后还可以包括步骤(c)：在所述钝化层的上部上形成防反射层。
所述异质结硅太阳能电池的制造方法还可以包括如下步骤：在步骤(c)之后，在所述防反射层的上部上形成上电极，并在所述晶体硅基板的下部上形成下电极；并且通过执行热处理，在所述下电极的接触所述晶体硅基板的下表面的部分处形成电场形成层。
有利效果
根据本发明，在异质结硅太阳能电池中，晶体硅基板和掺有杂质的钝化层形成pn结，从而使得pn界面的缺陷最小化，因此使电子和空穴的重新组合最小化，从而可以使异质结硅太阳能电池的效率最大化。
同样，在异质结硅太阳能电池的制造方法中，通过在制造异质结硅太阳能电池时按原样使用用于常规扩散型硅太阳能的扩散方法，本发明可以实现作为异质结硅太阳能电池的优点的高开路电压，并可以实现作为常规扩散型硅太阳能电池的优点的高短路电流、填充比、快速处理时间和低制造成本。
附图说明
结合附图，对于本领域技术人员，本发明的上述目的、特征和优点将变得更明显，在附图中：
图1是示意性地示出现有技术的异质结硅太阳能电池的基本结构的剖面图；
图2是示意性地示出根据本发明一个实施方式的异质结硅太阳能电池的结构的剖面图；
图3是示意性地示出根据本发明另一个实施方式的异质结硅太阳能电池的结构的剖面图；以及
图4至图9是示出制造图2的异质结硅太阳能电池的处理的图。
具体实施方式
下面，将参考附图来详细地描述本发明的优选实施方式。
图2是示意性地示出根据本发明一个实施方式的异质结硅太阳能电池的结构的剖面图。
如图2所示，本发明的异质结硅太阳能电池200包括p型晶体硅基板201，在基板201上按顺序形成有钝化层203、防反射层205、和上电极209，在基板201之下按顺序形成有纹理化结构206、电场形成层(BSF)207和下电极208。
异质结硅太阳能电池200是非晶/晶体np异质结结构，并包括淀积在p型晶体硅基板201上的用作n型非晶硅层的钝化层203。同时，异质结硅太阳能电池200不包括单独的n型非晶硅层，而通过使用掺杂有n型杂质的钝化层203来形成pn结。将在下面详细描述钝化层203的掺杂。
钝化层203是尽可能防止电子和空穴在非晶硅和晶体硅之间的界面处重新组合的层。在p型晶体硅基板201和n型掺杂钝化层203形成pn结的异质结硅太阳能电池200中，钝化层203自身用作n型非晶硅层，同时在与p型晶体硅基板201的界面处用作保护层，由此最小化pn结的界面处可能出现的缺陷，并尽可能防止电子和空穴的重新组合。
优选的是，钝化层203的上部形成有掺杂区，晶体硅基板201的上部形成有非掺杂区。
可以按照几个nm至几十个nm的厚度将钝化层203淀积在p型晶体硅基板201上。在该情况下，钝化层203可以由于后面描述的材料特性而与防反射层205一起用作双防反射层。
优选的是，钝化层203的材料是这样的材料：其能够通过保护p型晶体硅基板201的表面而最小化作为电子和空穴重新组合的原因的缺陷。这些材料例如可以包括氧化硅(SiO2)、碳化硅(SiC)、氮化硅(SiNx)或本征非晶硅等。另一方面，具有上述材料并且掺杂有n型杂质的钝化层203用作n型非晶硅层，由此，与常规异质结硅太阳能电池的非晶硅层相比，其串联电阻降低，从而增加异质结硅太阳能电池200的稳定性和可再现性。
防反射层205是使得对从异质结硅太阳能电池200的上部入射的太阳光的反射最小的层。此外，防反射层205使得在用作n型非晶硅层的钝化层203中的由太阳光所引起的电子的重新组合最少，并将重新组合的电子发射到上电极209。由此，钝化层203和防反射层205二者使电子的重新组合最少，使得可以最大化太阳能电池的效率。此外，如上所述，钝化层203和防反射层205用作双防反射层，从而可以进一步最大化太阳能电池的效率。
防反射层205可以通过使用诸如SiNx等的材料而形成。作为制备方法，可以使用等离子体化学汽相淀积法(PECVD)等，此时，优选的是，按照大约100nm来淀积防反射层。
纹理化结构206形成在p型晶体硅基板201的下表面上。这可以通过使用诸如刻蚀等的本领域公知技术在p型晶体硅基板201的下表面上执行表面处理来形成。纹理化结构206实现这样的功能：降低入射在异质结硅太阳能电池200上的太阳光的反射率并且帮助收集太阳光。纹理化结构的形状可以是锥体形、四方蜂窝形、和三角蜂窝形等。
电场形成层207使得下电极208可以用作晶体硅基板201的下表面处的杂质，并将基板201的下表面变换为p++型，使得该p++层最小化由基板201的下表面上的光而产生的电子的重新组合，从而可以增加太阳能电池的效率。通过在晶体硅基板201的下表面上印刷下电极208并在其上执行热处理，可以形成电场形成层207。这将在下面描述。
本发明的异质结硅太阳能电池200使得钝化层203可以用作pn结处的n型非晶硅层并且用作晶体硅与非晶硅之间的界面处的保护层，由此最小化缺陷。结果，使得电子和空穴的重新组合最小化，从而可以增加太阳能电池的效率。
此外，钝化层203与防反射层205一起用作双防反射层，由此最小化对入射在太阳能电池200上的太阳光的反射，并进一步增加太阳能电池的效率。
另一方面，通过纹理化结构206也使得对太阳光的反射最小化，并通过电场形成层207也使得电子的重新组合最小化，从而可以最大化异质结硅太阳能电池200的效率。
图3是示意性地示出根据本发明另一实施方式的异质结硅太阳能电池的结构的剖面图。
图3的异质结硅太阳能电池300大致具有与图4的异质结硅太阳能电池200相同的结构。但是，图3的异质结硅太阳能电池300和图4的异质结硅太阳能电池200之间的结构差别在于，基板301是n型晶体硅，钝化层303掺杂有p型杂质以充当p型非晶硅层，由此形成np结。
在异质结硅太阳能电池300中，钝化层303用作形成np结的p型非晶硅层并且用作保护层，由此最小化电子和空穴的重新组合。
异质结硅太阳能电池200与异质结硅太阳能电池300的效率相同，如果有必要，则可以选择性地实现它们。
图4至图9是描述图2的异质结硅太阳能电池200的制造处理的图。下面，参照图4至图9来描述异质结硅太阳能电池200的制造处理。
首先，如图4所示，对p型晶体硅基板201的下表面处理以形成纹理化结构206。作为热处理方法，可以使用本领域公知的技术，如刻蚀等，并且，纹理化结构206的类型可以形成为诸如锥体形或四方蜂窝形等的各种形状。
然后，如图5所示，在p型晶体硅基板201的上表面上形成钝化层203。可以通过使用诸如等离子体化学汽相淀积法(PECVD)等的本领域公知淀积方法来形成钝化层203。如上所述，钝化层203的材料可以包括氧化硅(SiO2)、碳化硅(SiC)、氮化硅(SiNx)或本征非晶硅等。优选的是，通过考虑钝化层203的作为双防反射层的功能，按照几个nm至几十nm的厚度形成淀积。
然后，如图6所示，在异质结硅太阳能电池中，用于形成pn结的钝化层203掺杂有n型杂质。通过利用n型杂质(例如(五价磷)(P))来掺杂钝化层203并将钝化层203转换为n型层，从而进行掺杂。
作为掺杂方法，可以按原样使用常规扩散方法。换言之，扩散方法可以使用这样的方法：将其上淀积有钝化层203的p型晶体硅基板201引入高温炉中，在850℃下向炉内注入n型杂质(例如POCl3)，对其进行掺杂。此外，通过使用离子植入法直接将n型杂质注入到钝化层203，从而可以获得掺杂有n型杂质的钝化层203。
可以按原样使用用于制造常规扩散型太阳能电池的扩散方法，即这样的扩散方法：通过按比p型硅基板中包括的p型杂质(例如三价硼(B))更高的浓度掺杂n型杂质(例如，五价磷(P))来形成n+型发射极，从而可以获得作为常规扩散型硅太阳能电池的优点的高短路电流和填充比、快速处理时间和低制造成本等等。
在钝化层的掺杂处理中，可能出现不必要的氧化物层，由此通过刻蚀等被去除这种不必要的氧化物层，并且还可以进一步执行设置边缘的边缘隔离处理，如图7所示。作为去除氧化物层的方法，可以执行本领域公知的技术，如使用氟酸溶液的湿法刻蚀方法等。
下面，如图8所示，在钝化层203上形成防反射层205。可以使用化学汽相淀积法(PECVD)等来淀积防反射层205，并且防反射层205使用诸如氮化硅(SiNx)等的材料。优选的是，防反射层的厚度为大约100nm。
接着，如图9所示，形成上电极209和下电极208，然后对其进行热处理以形成电场形成层207。
可以使用诸如银(Ag)等的材料来形成上电极209。形成上电极的方法可以使用丝网印刷方法等。随后，对上电极209进行热处理，使得它贯穿防反射层205以形成与作为n型非晶硅层的钝化层203的电接触。优选的是，形成上电极209的厚度为大约15μm。
可以使用诸如铝(Al)的材料来形成下电极208，并且也可以使用丝网印刷方法形成下电极208。当印刷了上电极209和下电极208、然后以高温(大约750至900℃)对其进行了热处理时，在下电极208的接触p型晶体硅基板201的下表面的部分形成电场形成层207。电场形成层207减少太阳光产生的电子的后表面重新组合，由此增加太阳能电池的效率。优选的是，形成下电极208的厚度大约为20至30μm。
图3的异质结硅太阳能电池300的制造处理与参照图4至图9描述的异质结硅太阳能电池200的制造处理的不同之处在于，使用n型晶体硅基板301替代p型晶体硅基板201，并使用具有p型杂质的钝化层203替代以n型杂质掺杂钝化层203。但是，这些制造处理本质上彼此相同。
本发明的异质结硅太阳能电池300的制造处理可以按原样使用用于制造常规扩散型硅太阳能电池的扩散方法，从而它可以实现作为现有技术的异质结硅太阳能电池的优点的高短路电流、填充比、快速处理时间和低制造成本。
同时，如上所述，通过钝化层203而使得在pn结或np结的界面处的电子和空穴的重新组合最小化，从而可以最大化异质结硅太阳能电池的效率。
尽管已经结合图中例示的示例性实施方式描述了本发明，但它只是示例性的。本领域技术人员将理解，可以对本发明做出各种修改和等同替代。因此，本发明的真正技术范围应该由所附的权利要求限定。

Claims (17)

1.一种异质结硅太阳能电池，该异质结硅太阳能电池包括：
晶体硅基板；以及
形成在所述晶体硅基板上并且掺有杂质的钝化层。
2.根据权利要求1所述的异质结硅太阳能电池，其中，所述晶体硅基板是p型晶体硅基板，并且所述杂质是n型杂质。
3.根据权利要求1所述的异质结硅太阳能电池，其中，所述晶体硅基板是n型晶体硅基板，并且所述杂质是p型杂质。
4.根据权利要求1所述的异质结硅太阳能电池，其中，钝化层硅包括从由氧化硅(SiO2)、碳化硅(SiC)、氮化硅(SiNx)和本征非晶硅组成的组中选择的至少一种。
5.根据权利要求1所述的异质结硅太阳能电池，其中，所述晶体硅基板的下表面形成有纹理化结构。
6.根据权利要求1所述的异质结硅太阳能电池，该异质结硅太阳能电池还包括：
形成在所述晶体硅基板的下部上的电场形成层；以及
形成在所述电场形成层的下部上的下电极。
7.根据权利要求1所述的异质结硅太阳能电池，该异质结硅太阳能电池还包括形成在所述钝化层的上部上的防反射层。
8.根据权利要求1所述的异质结硅太阳能电池，其中，所述钝化层的上部形成有掺杂区，并且，所述晶体硅基板的上部形成有非掺杂区。
9.根据权利要求1所述的异质结硅太阳能电池，其中，所述钝化层的上部的掺杂浓度高于所述晶体硅基板的上部的掺杂浓度。
10.一种异质结硅太阳能电池的制造方法，该方法包括以下步骤：
(a)在晶体硅基板的上表面上形成钝化层；以及
(b)对钝化层掺入杂质，以在所述晶体硅基板与所述钝化层之间形成结。
11.根据权利要求10所述的异质结硅太阳能电池的制造方法，其中，所述晶体硅基板是p型晶体硅基板，并且所述杂质是n型杂质。
12.根据权利要求10所述的异质结硅太阳能电池的制造方法，其中，所述晶体硅基板是n型晶体硅基板，并且所述杂质是p型杂质。
13.根据权利要求10所述的异质结硅太阳能电池的制造方法，其中，在步骤(b)中，通过如下的扩散方法来进行掺杂：所述扩散方法将淀积了所述钝化层的所述晶体硅基板引入炉中，并将杂质注入所述炉的内部。
14.根据权利要求10所述的异质结硅太阳能电池的制造方法，其中，在步骤(a)中，钝化层硅包括从由氧化硅(SiO2)、碳化硅(SiC)、氮化硅(SiNx)和本征非晶硅组成的组中选择的至少一种。
15.根据权利要求10所述的异质结硅太阳能电池的制造方法，该方法在步骤(a)之前还包括在所述晶体硅基板的下表面上形成纹理化结构的步骤。
16.根据权利要求10所述的异质结硅太阳能电池的制造方法，该方法在步骤(b)之后还包括步骤(c)：在所述钝化层的上部上形成防反射层。
17.根据权利要求16所述的异质结硅太阳能电池的制造方法，该方法还包括以下步骤：
在步骤(c)之后，在所述防反射层的上部上形成上电极，并在所述晶体硅基板的下部上形成下电极；以及
通过执行热处理，在所述下电极的与所述晶体硅基板的下表面接触的部分处形成电场形成层。
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