CN101819999A - Multilayer film structure for transverse induced crystallization of low-temperature poly-silicon film - Google Patents
Multilayer film structure for transverse induced crystallization of low-temperature poly-silicon film Download PDFInfo
- Publication number
- CN101819999A CN101819999A CN 201010175524 CN201010175524A CN101819999A CN 101819999 A CN101819999 A CN 101819999A CN 201010175524 CN201010175524 CN 201010175524 CN 201010175524 A CN201010175524 A CN 201010175524A CN 101819999 A CN101819999 A CN 101819999A
- Authority
- CN
- China
- Prior art keywords
- nickel
- low
- inducing
- silicon
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Abstract
The invention provides a multilayer film structure for transverse induced crystallization of a low-temperature polycrystalline silicon film, which comprises a substrate, an amorphous silicon film positioned on the substrate, a low-temperature oxide layer positioned on the amorphous silicon film, a groove penetrating the low-temperature oxide layer and exposing the amorphous silicon film, and a film positioned on the surface of exposed amorphous silicon, wherein the film is made of nickel-silicon oxide. Nickel residues in the amorphous silicon film can be effectively reduced by adopting SR-Ni/Si oxide as a film material, so the multilayer film structure is very suitable for manufacturing polycrystalline silicon through MILC. Simultaneously, process errors allowed during manufacturing a polycrystalline silicon substance are relatively big, so the multilayer film structure not only provides a wider process window, but also prevents different process parameters from influencing a polycrystalline silicon thin film transistor (TFT).
Description
Technical field
The invention belongs to the low-temperature polysilicon film field, relate in particular to a kind of multi-layer film structure that is used for transversely inducing and crystallizing low-temperature polycrystalline silicon film.
Background technology
Although active matrix liquid crystal demonstration (AM-LCD) major part still is made up of amorphous silicon (a-Si) thin-film transistor (TFT) at present, but for Active Matrix LCD At, adopt polysilicon (p-Si) thin-film transistor that higher resolution and littler pixel can be provided, and when adopting multi-crystal TFT, some drive circuits can also be integrated on the glass substrate.In addition, aspect driving organic LED display (OLED), multi-crystal TFT is more stable than non-crystalline silicon tft, and therefore low-cost, high-performance and more reliable low temperature polycrystalline silicon (LTPS) treatment technology are essential.
The existing method that obtains polysilicon membrane mainly comprises solid state crystallization method (SPC), laser annealing method (ELA), quick high-temp annealing method (RTA) and the horizontal induced crystallization of metal (MILC) etc.In said method, because the resulting polysilicon membrane good uniformity of MILC, cost is low, pays close attention to greatly and be subjected to people.When adopting the MILC method, adopt pure metallic nickel that evaporation forms as the thin-film material of inducing usually, but that resulting polysilicon membrane contain more nickel is residual, the chances are for the ratio of nickel/silicon～and 10
-3The order of magnitude (IEEE Trans, Electron Devices, 48 (1655), 2001).Therefore, need further to reduce the nickel concentration that remains in the polysilicon membrane.
Summary of the invention
The objective of the invention is to overcome the defective of above-mentioned prior art, provide a kind of and can further reduce the multi-layer film structure that is used for transversely inducing and crystallizing low-temperature polycrystalline silicon film that remains in nickel concentration in the polysilicon membrane.
The objective of the invention is to be achieved through the following technical solutions:
According to the present invention, a kind of multi-layer film structure that is used for transversely inducing and crystallizing low-temperature polycrystalline silicon film is provided, comprising:
Substrate;
Be positioned at the amorphous silicon membrane on this substrate;
Be positioned at the low temperature oxide layer on this amorphous silicon membrane;
Penetrate described low temperature oxide layer and expose the groove of described amorphous silicon membrane;
Be positioned at the film on the amorphous silicon surfaces of described exposure;
Wherein, described film is made by the nisiloy oxide.
In technique scheme, the thickness of nisiloy sull is 2.5～50
In technique scheme, the nisiloy sull is made by evaporation, spin coating method.
In technique scheme, form the nisiloy sull by sputter nickel silicon alloy target.
In technique scheme, the ratio of nickel and silicon is 1: 1～1: 50 in the nickel silicon alloy target.
In technique scheme, the ratio of nickel and silicon is 1: 9 in the nickel silicon alloy target.
In technique scheme, the atomic concentration of oxygen, silicon and nickel ratio is 40: 21: 1 in the nisiloy oxide.
In technique scheme, sputter procedure is carried out under the environment of oxygen and argon gas, and sputtering power is 7W to 40W.
In technique scheme, the ratio of described oxygen and argon gas is 1: 100 to 1: 200.
Compared with prior art, the invention has the advantages that:
1. reduced the nickel residual concentration;
2. saving cost improves the crystallization rate of polysilicon membrane.
Description of drawings
It is following that embodiments of the present invention is further illustrated with reference to accompanying drawing, wherein:
Fig. 1 is the schematic diagram that is used for the multi-layer film structure of transversely inducing and crystallizing low-temperature polycrystalline silicon film of the present invention;
Fig. 2 be embodiments of the invention 1 590 ℃ down after annealing half an hour on amorphous silicon layer the partially-crystallized microphotograph of sample;
Fig. 3 is the x-ray photoelectron energy spectrogram (XPS) from slowly-releasing nickel/Si oxide of embodiments of the invention 1;
Fig. 4 has illustrated the curve chart of relation of thickness of crystallization rate and two kinds of inducing substances;
The nickel that Fig. 5 has remained in the polysilicon membrane when having illustrated to adopt three kinds of different inducing substances distributes.
Embodiment
The film of inducing of the present invention is made by the nisiloy oxide, because it can constantly spontaneously discharge nickel in the induced longitudinal crystallization process, thereby reduced the nickel that remains in the polysilicon membrane, this thin-film material has been called " from slowly-releasing nisiloy oxide (SR-Ni/Si oxide) " herein.
[embodiment 1]:
Adopt nisiloy oxide of the present invention as the preparation process of inducing the low-temperature polysilicon film of film, may further comprise the steps at least:
1) at first adopts low-pressure chemical vapor deposition (LPCVD) on substrate 11 materials, to deposit the amorphous silicon active layer of 50nm, then deposit the low temperature oxide (LTO) of 100nm thickness;
2) by using the development photoetching treatment, on the LTO layer, etch one or more grooves 12 (this groove is called and induces groove) herein, induce the about 30 μ m of width (W) of groove, the adjacent about 5000 μ m of spacing (S) that induce between the groove, because groove penetrates the LTO layer, expose the amorphous silicon of inducing under the groove, as shown in Figure 1;
3) sputter nickel/Si oxide 13 on the amorphous silicon in inducing groove, Ni: Si=1 in the wherein employed nickel silicon alloy target: 9, and the ratio of argon gas and oxygen is 200: 1 in the sputter environment, sputtering power is generally 10W, time is 10 minutes, and the thickness (T) that records nickel/Si oxide is approximately 2.5 dusts
4) above-mentioned product is carried out 590 ℃ of annealing in process of 1 hour in nitrogen atmosphere, thereby realize the crystallization of amorphous silicon.
Fig. 2 be embodiments of the invention 1 590 ℃ down after annealing half an hour on amorphous silicon layer the partially-crystallized microphotograph of sample.As can be seen from the figure, in this crystallization process, crystallization is usually from inducing amorphous silicon under the groove 22 to begin and along with the annealing time cross growth, the direction of crystallization is substantially all perpendicular to inducing groove 22.
By X-ray photoelectron spectroscopic analysis nickel/Si oxide, as shown in Figure 3, corresponding to Ni
2p, O
1sAnd Si
2pBond energy be respectively 854.3eV, 532.5e and 103.5eV.This shows that silicon and nickle atom are surrounded by oxygen atom.The concentration ratio of oxygen, silicon and nickle atom is 64.18: 34.19: 1.63 (being about 40: 21: 1).What it should be noted that present embodiment uses is 9: 1 nickel silicon alloy, and sputter procedure is to carry out under 200: 1 argon oxygen mixed environment, so we suppose that the nickel/silicon alloy film of sputter is 19SiO
2: Si
2NiO
2Alloy structure.Si
2NiO
2May comprise Si
2The structure that O-NiO mixes, and its molecular concentration in the nickel/Si oxide of institute's sputter has only 5%.As everyone knows, the bond strength of Ni-O has only 93.6 ± 0.9K car/mol, and is lower than Si-O (190.9 ± 2K car/mol), but is higher than Si-Ni (76 ± 4Kcar/mol).Contrast these bond strengths mutually, the principle of this revulsive crystallization may be: the silicon atom in the amorphous silicon adjacent with nickel/Si oxide is had the ability from Si
2Snatch away nickel among the O-NiO, and autoxidation becomes SiO
2, discharge monatomic nickel.This reaction can be described as:
NiO+Si
2O→2SiO+Ni
Simultaneously, along with crystallization media inducing crystallization of amorphous silicon, the nickle atom that discharges will generate nickel silicide with the silicon generation chemical reaction in the amorphous silicon.In this crystallization process, only be the nickel of under relatively low ratio, having substituted from the nickel/silicon matter of slowly-releasing.This nickel induce the source by silicon and nisiloy oxide sluggish nickel is provided, be different from pure nickel source, a large amount of pure nickel atoms is provided.Therefore the nickel consumption in the nickel oxide will lack when adopting pure nickel.Thisly can reduce nickel residual in the polysilicon from the slowly-releasing active nickel.
[embodiment 2～6]:
Method according to the foregoing description 1 prepares embodiment 2～6, and different is is respectively 4 from the thickness T of slowly-releasing nisiloy oxide
10
20
30
50
In order to contrast, having prepared with thickness respectively is 10
20
50
Pure nickel be the sample of inducer.Fig. 4 be illustrated of the present invention from slowly-releasing nickel/Si oxide and traditional pure nickel material thickness and the curve chart of the relation of crystallization rate.Wherein crystallization rate is meant that the interior nickel of special time (referring to 1 hour here) induces the length of polysilicon lateral growth.In this figure, the relation of crystallization rate and two kinds of inducing substance thickness has very big difference.Use is from slowly-releasing nickel/Si oxide, and crystallization rate surpasses 4 at thickness
The time reach steady state value; The use pure nickel, crystallization rate obviously changes along with the variation of thickness.This explanation is better than pure nickel metal from the technology permissible error of slowly-releasing nickel/Si oxide.
For the performance of crystallization polysilicon relatively, the present invention has prepared 3 kinds of different sources of inducing on same amorphous silicon, be labeled as A respectively, B and C.Wherein sample A and B adopt the nisiloy oxide as method preparation as described in the embodiment 1, and sputter is 3 minutes and 60 minutes respectively, sample C adopt by electron-beam vapor deposition method deposit 50
Pure nickel, three samples crystallize into polysilicon after through 590 ℃ annealing in 2 hours fully.The concentration of residual nickel compares in the polysilicon membrane that these 3 kinds of samples are obtained, and describe to analyze with TOF-SIMS (time of flight secondary ion massspectrometry), tested near the residual nickel of induction port in three crystallization polysilicons, as shown in Figure 5 along the film vertical depth to film surface.As can be seen from Figure 5, the distribution of nickel in three samples is uneven.The residual peak value of nickel appears at the bottom near the amorphous silicon of glass, and the nickel in sample A and B is residual about the same, but these two all is lower than half of the order of magnitude of sample C.The thickness of this explanation inducing substance is not that the nickel that influences as initial nickel capacity on the interface of adjacent amorphous silicon film is residual.
Above embodiment only is exemplary, and in other embodiments of the invention, the thickness of described nisiloy oxide can be 2.5～50
Between.Preferred when adopting sputtering method to prepare above-mentioned nisiloy oxide; the ratio of nickel and silicon can be between 1: 1～1: 50 in the described nickel silicon alloy target; described sputter procedure can be carried out under oxygen and situation that other inertia or protective gas mix; other inertia or protective gas comprise nitrogen, argon gas etc.; ratio can be between 1: 100 to 1: 200; described sputtering power can be between 7W to 40W, and sputtering time can be at 1 minute to 1 hour.Should be appreciated that to those skilled in the art described nisiloy oxide can also adopt the additive method except that sputter to prepare, and includes but not limited to evaporation, spin-coating method etc., described backing material includes but not limited to glass substrate, polymer plastic etc.Described low temperature oxide is preferably cryogenic oxidation silicon.
In the present invention, adopt the SR-Ni/Si oxide as inducer, the nickel that can reduce effectively in the polysilicon film is residual, is very suitable for MILC and makes polysilicon.Simultaneously, the fabrication error that is allowed when making polycrystalline silicon substances is also big relatively, and wideer process window not only is provided, and has also prevented the influence of different technological parameters to multi-crystal TFT.
Although the present invention is made specific descriptions with reference to the above embodiments, but for the person of ordinary skill of the art, should be appreciated that and to make amendment based on content disclosed by the invention within spirit of the present invention and the scope or improve not breaking away from, these modifications and improving all within spirit of the present invention and scope.
Claims (9)
1. multi-layer film structure that is used for transversely inducing and crystallizing low-temperature polycrystalline silicon film comprises:
Substrate;
Be positioned at the amorphous silicon membrane on this substrate;
Be positioned at the low temperature oxide layer on this amorphous silicon membrane;
Penetrate described low temperature oxide layer and expose the groove of described amorphous silicon membrane;
Be positioned at the film on the amorphous silicon surfaces of described exposure;
Wherein, described film is made by the nisiloy oxide.
2. the multi-layer film structure that is used for transversely inducing and crystallizing low-temperature polycrystalline silicon film according to claim 1 is characterized in that, the thickness of described nisiloy sull is 2.5～50
3. the multi-layer film structure that is used for transversely inducing and crystallizing low-temperature polycrystalline silicon film according to claim 1 is characterized in that, described nisiloy sull is made by evaporation, spin coating method.
4. the multi-layer film structure that is used for transversely inducing and crystallizing low-temperature polycrystalline silicon film according to claim 1 is characterized in that, forms described nisiloy sull by sputter nickel silicon alloy target.
5. the multi-layer film structure that is used for transversely inducing and crystallizing low-temperature polycrystalline silicon film according to claim 4 is characterized in that, the ratio of nickel and silicon is 1: 1～1: 50 in the described nickel silicon alloy target.
6. the multi-layer film structure that is used for transversely inducing and crystallizing low-temperature polycrystalline silicon film according to claim 5 is characterized in that, the ratio of nickel and silicon is 1: 9 in the described nickel silicon alloy target.
7. the multi-layer film structure that is used for transversely inducing and crystallizing low-temperature polycrystalline silicon film according to claim 6 is characterized in that, the atomic concentration ratio of oxygen, silicon and nickel is 40: 21: 1 in the described nisiloy oxide.
8. the multi-layer film structure that is used for transversely inducing and crystallizing low-temperature polycrystalline silicon film according to claim 4 is characterized in that described sputter procedure is carried out under the environment of oxygen and argon gas, sputtering power is 7W to 40W.
9. the multi-layer film structure that is used for transversely inducing and crystallizing low-temperature polycrystalline silicon film according to claim 7 is characterized in that, the ratio of described oxygen and argon gas is 1: 100 to 1: 200.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201010175524 CN101819999A (en) | 2010-05-17 | 2010-05-17 | Multilayer film structure for transverse induced crystallization of low-temperature poly-silicon film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201010175524 CN101819999A (en) | 2010-05-17 | 2010-05-17 | Multilayer film structure for transverse induced crystallization of low-temperature poly-silicon film |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN101819999A true CN101819999A (en) | 2010-09-01 |
Family
ID=42655014
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 201010175524 Pending CN101819999A (en) | 2010-05-17 | 2010-05-17 | Multilayer film structure for transverse induced crystallization of low-temperature poly-silicon film |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN101819999A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102956678A (en) * | 2011-08-23 | 2013-03-06 | 广东中显科技有限公司 | Polysilicon film |
| CN103681776A (en) * | 2013-12-24 | 2014-03-26 | 京东方科技集团股份有限公司 | Low-temperature polycrystalline silicon film, low-temperature polycrystalline silicon film preparation method, film transistor and display device |
| CN109727875A (en) * | 2018-12-25 | 2019-05-07 | 惠科股份有限公司 | A kind of production method and display panel of thin film transistor (TFT) |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5949115A (en) * | 1996-08-13 | 1999-09-07 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device including nickel formed on a crystalline silicon substrate |
| JP2000340504A (en) * | 1999-05-27 | 2000-12-08 | Sharp Corp | Manufacture of semiconductor device |
| US20030001158A1 (en) * | 1996-01-19 | 2003-01-02 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method of fabricating same |
| US20050056843A1 (en) * | 1996-01-19 | 2005-03-17 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and its manufacturing method |
| CN101064246A (en) * | 2006-04-27 | 2007-10-31 | 香港科技大学 | Metal-induced crystallization of amorphous silicon and metal removal techniques |
| CN101086962A (en) * | 2006-03-13 | 2007-12-12 | 香港科技大学 | Metal-induced crystallization of amorphous silicon |
| CN101179013A (en) * | 2007-12-10 | 2008-05-14 | 南开大学 | Preparation method of self slow-release metal inducing crystallization polycrystalline silicon thin film material and applications |
-
2010
- 2010-05-17 CN CN 201010175524 patent/CN101819999A/en active Pending
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20030001158A1 (en) * | 1996-01-19 | 2003-01-02 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method of fabricating same |
| US20050056843A1 (en) * | 1996-01-19 | 2005-03-17 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and its manufacturing method |
| US5949115A (en) * | 1996-08-13 | 1999-09-07 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device including nickel formed on a crystalline silicon substrate |
| JP2000340504A (en) * | 1999-05-27 | 2000-12-08 | Sharp Corp | Manufacture of semiconductor device |
| CN101086962A (en) * | 2006-03-13 | 2007-12-12 | 香港科技大学 | Metal-induced crystallization of amorphous silicon |
| CN101064246A (en) * | 2006-04-27 | 2007-10-31 | 香港科技大学 | Metal-induced crystallization of amorphous silicon and metal removal techniques |
| CN101179013A (en) * | 2007-12-10 | 2008-05-14 | 南开大学 | Preparation method of self slow-release metal inducing crystallization polycrystalline silicon thin film material and applications |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102956678A (en) * | 2011-08-23 | 2013-03-06 | 广东中显科技有限公司 | Polysilicon film |
| CN103681776A (en) * | 2013-12-24 | 2014-03-26 | 京东方科技集团股份有限公司 | Low-temperature polycrystalline silicon film, low-temperature polycrystalline silicon film preparation method, film transistor and display device |
| US9559159B2 (en) | 2013-12-24 | 2017-01-31 | Boe Technology Group Co., Ltd. | Low-temperature polysilicon membrane and preparation method thereof, thin-film transistor and display device |
| CN109727875A (en) * | 2018-12-25 | 2019-05-07 | 惠科股份有限公司 | A kind of production method and display panel of thin film transistor (TFT) |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| Ohara et al. | 21.3: 4.0 In. QVGA AMOLED Display Using In‐Ga‐Zn‐Oxide TFTs with a Novel Passivation Layer | |
| CN202405260U (en) | Active matrix display | |
| CN106756877B (en) | C axis crystallizes IGZO film and preparation method thereof | |
| CN103022143A (en) | Thin film transistor, method for manufacturing same, and display device | |
| Kim et al. | Polycrystalline Si films formed by Al-induced crystallization (AIC) with and without Al oxides at Al/a-Si interface | |
| CN106531782A (en) | Metal oxide thin film transistor and manufacturing method thereof | |
| CN101814438A (en) | Preparation method of thin film transistor based on induced longitudinal crystallization polycrystalline silicon | |
| CN102651399B (en) | Microcrystal amorphous silicon composite thin film transistor and manufacturing method thereof | |
| CN101819999A (en) | Multilayer film structure for transverse induced crystallization of low-temperature poly-silicon film | |
| CN101853784B (en) | Method for transversely inducing and crystallizing low-temperature polycrystalline silicon film | |
| CN103236400B (en) | Production method of low-temperature polysilicon thin film and production method of thin-film transistor | |
| Arai et al. | 56.1: Invited Paper: Manufacturing Issues for Oxide TFT Technologies for Large‐Sized AMOLED Displays | |
| US20120104616A1 (en) | Method for depositing a thin film electrode and thin film stack | |
| CN107369719B (en) | Oxide thin film transistor pure copper composite structure source-drain electrode and preparation method thereof | |
| Choi et al. | Giant-grain silicon (GGS) and its application to stable thin-film transistor | |
| CN109638174A (en) | OLED display panel and preparation method thereof | |
| WO2016165224A1 (en) | Metal oxide thin film transistor and preparation method therefor, display substrate and display device | |
| US9837542B2 (en) | Polycrystalline silicon thin-film transistor | |
| JP2009215613A (en) | METHOD FOR DEPOSITING COPPER ALLOY COMPOUND FILM HAVING EXCELLENT ADHESIVENESS, AND Ca-CONTAINING COPPER ALLOY TARGET TO BE USED IN THE METHOD | |
| KR20060025624A (en) | Crystallization method of amorphous silicon thin film | |
| CN105220131B (en) | The method that air pulse method prepares thin film transistor (TFT) IGZO semiconductor film layers | |
| Kang et al. | High-Quality Polycrystalline Silicon Film Crystallized from Amorphous Silicon Film using NiCl2 Vapor | |
| Shetty et al. | Formation and characterization of silicon films on flexible polymer substrates | |
| Wu et al. | Synthesis of microcrystalline silicon at room temperature using ICP | |
| Park et al. | Novel Integration Process for IGZO MO-TFT Fabrication on Gen 8.5 PECVD and PVD Systems-A Quest to Improve TFT Stability and Mobility |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| AD01 | Patent right deemed abandoned |
Effective date of abandoning: 20100901 |
|
| C20 | Patent right or utility model deemed to be abandoned or is abandoned |