CN101819959A - 半导体模块和便携式设备 - Google Patents

半导体模块和便携式设备 Download PDF

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Publication number
CN101819959A
CN101819959A CN201010135462A CN201010135462A CN101819959A CN 101819959 A CN101819959 A CN 101819959A CN 201010135462 A CN201010135462 A CN 201010135462A CN 201010135462 A CN201010135462 A CN 201010135462A CN 101819959 A CN101819959 A CN 101819959A
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China
Prior art keywords
layer
semiconductor module
wiring layer
substrate
join domain
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CN201010135462A
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English (en)
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长松正幸
小原泰浩
臼井良辅
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Sanyo Electric Co Ltd
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Sanyo Electric Co Ltd
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Publication of CN101819959A publication Critical patent/CN101819959A/zh
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Abstract

本发明提供一种半导体模块和便携式设备。在绝缘树脂层的与半导体元件搭载面相反的一侧的主表面设置有包含外部连接区域的配线层。配线层由保护层覆盖。在保护层上设置有露出外部连接区域的开口。外部连接区域构成为向绝缘树脂层凹陷的凹下形状。基板安装用焊球填充在整个开口中，并且填充在外部连接区域部分的凹部中，从而连接到分隔层。

Description

半导体模块和便携式设备
技术领域
本发明涉及在包含基底和配线层的元件搭载用基板上搭载有半导体元件的半导体模块和搭载了该半导体模块的便携式设备。
背景技术
在手机、PDA、DVC、DSC等便携式电子设备的加速高功能化过程中，为了使这些产品被市场接受，必须使其小型化/轻量化，为了实现小型化/轻量化，要求高集成的系统LSI。另一方面，相对于这些电子设备，要求更容易使用且便利，相对于在设备中使用的LSI，要求高功能化、高性能化。因此，随着LSI芯片的高集成化，其I/O数量(输入输出部的数量)增加，另一方面，对封装自身小型化的要求也变强，为了同时满足这两者，强烈要求研发适合于半导体部件的高密度基板安装的半导体模块。为了与这些要求相对应，研发了各种被称为CSP(Chip Size Package：芯片尺寸封装)的封装技术。
随着对半导体模块小型化的要求，期待将半导体模块进行基板安装时的连接可靠性进一步提高。作为与半导体模块的连接可靠性相关的主要原因，例举基板安装用的外部连接电极(通常为焊球)与半导体模块的配线层的连接可靠性。在现有的半导体模块中，存在进一步提高与外部连接电极的连接可靠性的余地。
发明内容
本发明是鉴于上述课题而作出的，其目的是提供一种能够提高外部连接电极的连接可靠性的半导体模块。
本发明的一种实施方式是半导体模块。该半导体模块的特征在于，包括元件搭载用基板和半导体元件，所述元件搭载用基板包含基底、设置在基底的一个主表面的第一配线层、设置在基底的另一个主表面的第二配线层、和覆盖基底的另一个主表面并且设置有使第二配线层的外部连接区域露出的开口的保护层，所述半导体元件安装在基底的一个主表面侧，外部连接区域的第二配线层的表面的位置比基底侧的保护层的底面更靠近基底侧。
根据该实施方式，当安装外部连接电极时，能够使半导体模块的外部连接区域和保护层与外部连接电极的接触面积增大。因此，由于外部连接区域和保护层与外部连接电极的连接强度增大，所以可以提高外部连接电极的连接可靠性。
在该实施方式的情况下，在开口周围，在基底侧的保护层的底面和第二配线层的表面之间产生间隙，可以使外部连接区域比开口宽。此外，在外部连接区域之上形成有导电性分隔层，分隔层的表面的位置比基底侧的保护层的底面更靠近基底侧。
本发明的另一实施方式是半导体模块。该半导体模块的特征在于，包括：基底、设置在基底的一个主表面的第一配线层、设置在基底的另一个主表面的第二配线层、覆盖基底的另一个主表面并且设置有使第二配线层的外部连接区域露出的开口的保护层、安装在第二配线层的外部连接区域的外部连接电极、和安装在基底的一个主表面侧的半导体元件；外部连接区域的第二配线层的表面的位置比基底侧的保护层的底面更靠近基底侧。
根据该实施方式，能够使外部连接电极与半导体模块的外部连接区域和保护层的接触面积增大。因此，由于外部连接电极与半导体模块的外部连接区域和保护层的连接强度增大，所以可以提高外部连接电极的连接可靠性。
在该实施方式的情况下，在开口的周围，在基底侧的保护层的底面和第二配线层的表面之间产生间隙，可以在该间隙中填充有外部连接电极。此外，在外部连接电极和外部连接区域之间可以设置有与第二配线层相比与外部连接电极的润湿性高的分隔层。
本发明的又一种实施方式，其特征在于，搭载上述任何一种实施方式的半导体模块。
附图说明
图1是示出实施方式1的半导体模块的结构的剖面图。
图2是示出外部连接区域中的焊球和配线层的连接结构的主要部分的放大图。
图3(A)～(D)是示出实施方式1的半导体模块的制造方法的工序剖面图。
图4(A)～(E)是示出实施方式1的半导体模块的制造方法的工序剖面图。
图5(A)～(C)是示出实施方式1的半导体模块的制造方法的工序剖面图。
图6是示出实施方式2的半导体模块的结构的剖面图。
图7是示出包括实施方式的半导体模块的手机的结构的图。
图8是在图7中示出的手机的局部剖面图。
具体实施方式
参照优选实施方式描述本发明。这并非用来限定本发明的范围，而是举例说明本发明。
下面，将参照附图说明本发明的实施方式。在所有的附图中，相同的构成要素标注相同的附图标记，并且适当地省略说明。
(实施方式1)
图1是示出实施方式1的半导体模块的结构的剖面图。半导体模块10包括元件搭载用基板20和半导体元件30。在本实施方式中，半导体元件30通过引线接合法连接到元件搭载用基板20上。
元件搭载用基板20包括绝缘树脂层40，设置在绝缘树脂层40的一个主表面(半导体元件搭载侧)上的配线层50、保护层52，和设置在绝缘树脂层40的另一个主表面的配线层60、保护层62、焊球70。
作为构成绝缘树脂层40的材料，例如例示有BT树脂等三聚氰胺电介质，液晶聚合物，环氧树脂，PPE树脂，聚酰亚胺树脂，含氟树脂，酚醛树脂，聚酰胺双马来酰亚胺等热固性树脂。根据提高半导体模块10的散热性的观点，优选绝缘树脂层40具有高导热性。因此，优选地，绝缘树脂层40含有银、铋、铜、铝、镁、锡、锌和它们的合金等作为高导热性填充剂。
配线层50具有规定的配线图案，设置在绝缘树脂层40的一个主表面。配线层50由铜等导电材料形成。配线层50包含用于由引线接合法连接半导体元件30的基板电极51(电极衬垫)。配线层50的厚度例如是10～25μm。在基板电极51的表面，设置有Ni层和层叠在该Ni层表面的Au层的Ni/Au层53。
保护层52覆盖绝缘树脂层40和配线层50。在保护层52设置有露出基板电极51的开口。由保护层52抑制配线层50的氧化、绝缘树脂层40的劣化。保护层52例如是光致抗蚀剂层。保护层52的厚度例如是10～50μm。
配线层(再配线)60具有规定的图案，设置在绝缘树脂层40的另一个主表面。配线层60由铜等导电材料形成。配线层60包含用于连接焊球(外部连接电极)70的外部连接区域61。配线层60的厚度例如是10～25μm。
配线层50和配线层60通过贯通绝缘树脂层40的通路导体(未图示)电连接。通路导体例如通过镀铜而形成。
保护层62设置在绝缘树脂层40的另一个主表面以覆盖配线层60，由保护层62抑制配线层60的氧化、绝缘树脂层40的劣化。在保护层62上，设置有用于将焊球70搭载到外部连接区域61的开口。焊球70在设置于保护层62的开口内，经由下述的分隔层(介在層)64电连接到配线层60上，半导体模块10由焊球70连接到未图示的印刷配线基板上。保护层62例如由光致抗焊剂形成，保护层62的厚度例如是10～50μm。下面将详细地描述焊球70和配线层60的连接部分。
半导体元件30是IC(集成电路)、LSI(大规模集成电路)等有源元件。在半导体元件30的电极形成表面设置有元件电极32(电极衬垫)，元件电极32和基板电极51通过金线等导线34连接。
半导体元件30通过由密封树脂80密封，降低了来自外界的影响。密封树脂80可以通过传递模塑、注射模塑、浇注法(ポツテイング)或浸渍法(デイツピング)而实现。作为树脂材料，可以由环氧树脂等热固性树脂通过传递模塑或浇注法实现，也可以由聚酰亚胺树脂、聚苯硫醚等热塑性树脂通过注射模塑实现。作为构成焊球70的材料，例如例示为Ag、Cu、Bi、Zn、In、Au、Sb、Ga、Ge、Pb等金属和Sn的合金。
接下来，参照图2详细地说明在外部连接区域61中的焊球70和配线层60的连接结构。图2是示出外部连接区域61中的焊球70和配线层60的连接结构的主要部分的放大图。并且，图2与图1上下颠倒。
如图2所示，外部连接区域61的配线层60的表面的位置比绝缘树脂层40侧的保护层62的底面更靠近绝缘树脂层40侧。换句话说，配线层60的表面在外部连接区域61中构成向绝缘树脂层40凹陷的凹下形状。进一步地，在设置于保护层62的开口的周围，绝缘树脂层40侧的保护层62的底面和配线层60的表面之间产生间隙，外部连接区域61比该开口宽。
在配线层60的外部连接区域61上，设置有导电性分隔层64。在本实施方式中，分隔层64是Ni/Au层。与配线层60接触的Ni层的厚度例如是0.05～0.1μm。此外，设置在Ni层上的Au层的厚度例如是0.5～1.0μm。分隔层64的表面的位置比绝缘树脂层40侧的保护层62的底面更靠近绝缘树脂层40侧。换句话说，分隔层64的厚度在以外部连接区域61周围的配线层60的表面为基准时比外部连接区域61部分的凹部(深度)D薄。
此外，分隔层64是Ni/Pd/Au层。与配线层60接触的Ni层的厚度例如是0.05～0.1μm。此外，设置在Ni层上的Pd层的厚度例如是0.05～1μm。此外，设置在Pd层上的Au层的厚度例如是0.05～1μm。在这种情况下，同样地，分隔层64的表面的位置比绝缘树脂层40侧的保护层62的底面更靠近绝缘树脂层40侧。换句话说，分隔层64的厚度在以外部连接区域61周围的配线层60的表面为基准时比外部连接区域61部分的凹部(深度)D薄。并且，在Ni/Au层的情况和Ni/Pd/Au层的情况下，凹部D例如都是1.5～3μm.
焊球70被填充在设置于保护层62的整个开口中，并且填充在外部连接区域61的凹部中，并连接到与外部连接区域61对应地设置的分隔层64上。因此，焊球70在设置于保护层62的开口的周围，进入保护层62的底面和分隔层64的表面之间的间隙中。
并且，构成分隔层64的Ni层和Au层在通过使焊球70逆流而安装时熔化，可以与构成焊球70的焊料形成合金。在这种情况下，分隔层64不是Ni层和Au层的层叠结构，而是作为构成焊球70、配线层60的材料即Sn、Cu等的合金层而存在。
(制造方法)
在此，参照图3～图5说明根据实施方式1的半导体模块的制造方法。并且，图5(A)～图5(C)是与图4(A)～(C)相对应的主要部分的放大图，与图4(A)～(C)上下颠倒。
首先，如图3(A)所示，预备在一个主表面贴附铜箔43且在另一个主表面贴附铜箔45的绝缘树脂层40。铜箔43、45的厚度例如是5μm。
接下来，如图3(B)所示，采用电镀法将铜箔43、45增厚至20μm左右。并且，在将铜箔43、45增厚时，在规定位置形成与铜箔43和铜箔45连接的通路导体(未图示)。具体地，在通过钻孔加工、激光加工等打孔加工，在绝缘树脂层40和铜箔43、45的规定区域形成通路孔之后，通过无电解电镀法和电解电镀法，在该通路孔中填充铜，从而形成通路导体，并且将分别设置在绝缘树脂层40的两个主表面的铜箔43、45增厚。
接下来，如图3(C)所示，采用光刻法，在铜箔43、45上分别形成规定图案的抗蚀剂100、102。
接下来，如图3(D)所示，将抗蚀剂100作为掩模，通过由氯化铁等蚀刻溶液进行湿蚀刻，从而在绝缘树脂层40的一个主表面形成配线层50。与此同步地，将抗蚀图案102作为掩模，通过由氯化铁等蚀刻溶液进行湿蚀刻，从而在绝缘树脂层40的另一个主表面形成配线层60。
接下来，在采用氢化钠溶液去除抗蚀剂100、102之后，采用层压装置在绝缘树脂层40的两个主表面的整个表面分别层叠抗焊剂层。抗焊剂层的膜厚度例如是15μm。
之后，如图4(A)和图5(A)所示，在绝缘树脂层40的一个主表面侧，采用光刻法在抗焊剂层上设置开口以露出基板电极51，并形成保护层52。同样地，在绝缘树脂层40的另一个主表面侧，采用光刻法在抗焊剂层上设置开口以露出外部连接区域61，并形成保护层62。
接下来，如图4(B)和图5(B)所示，通过采用Na2S2O8溶液进行湿蚀刻(软蚀刻(ソフトエツチング))，将在保护层62的开口内露出的配线层60进行湿蚀刻(软蚀刻)。蚀刻深度D例如是2μm。由此，配线层60的表面在外部连接区域61中构成向绝缘树脂层40凹陷的凹下形状。此外，通过软蚀刻，去除位于开口周围的保护层62下方的配线层60，在保护层62和配线层60之间产生间隙。此时，同样地软蚀刻基板电极51。
接下来，如图4(C)和图5(C)所示，通过电解电镀，在外部连接区域61上形成由Ni/Au层构成的分隔层64。作为与分隔层64的厚度相关的条件，例举为比在图5(B)中示出的蚀刻深度D薄。此外，与形成分隔层64同步地，在基板电极51的表面形成Ni/Au层53。
接下来，如图4(D)所示，在设置在元件搭载区域的保护层52上搭载半导体元件30。可以在保护层52和半导体元件30之间涂布粘接剂。接下来，采用金线通过引线接合法连接设置在半导体元件30上的元件电极32和基板电极51。
接下来，如图4(E)所示，例如通过传递模塑法由用环氧树脂构成的密封树脂80密封半导体元件30。
接下来，在保护层52的开口中通过丝网印刷法搭载焊球70。具体地，通过丝网掩模将树脂和由焊料构成为膏状的焊膏印刷到所希望的部位，并且通过加热到焊料熔化温度而形成焊球70。此时，用于焊球70的焊料和分隔层64的Ni和Au构成合金，分隔层64不是Ni层和Au层的层叠结构，而是作为构成焊球70、配线层60的材料即Sn、Cu等的合金层而存在。
通过以上步骤，可以制造实施方式1的半导体模块10。
根据以上说明的实施方式1的半导体模块10可以得到如下的效果。
焊球70(外部连接电极)和设置于半导体模块10的分隔层64的接触面积增大。由此，因焊球70和分隔层64的连接强度增大，所以可以提高焊球70的连接可靠性。此外，由于保护层(光致抗蚀剂层)62的整个开口区域由焊球70填充，所以焊球70与保护层62的开口部分的侧壁的接触面积增大。由此，因焊球70和保护层62的连接强度增大，所以可以提高焊球70的连接可靠性，进而可以提高半导体模块10的连接可靠性。
此外，焊球70的一部分在开口周围进入保护层62和分隔层64之间的间隙，由此，焊球70难以脱落，所以可以进一步提高焊球70的连接可靠性。
(实施方式2)
图6是示出实施方式2的半导体模块的结构的剖面图。本实施方式的半导体模块10具有在封装上搭载封装的被称为层叠封装(PoP)的三维封装用基板结构。
在本实施方式中，半导体元件30在使电极形成面朝下的状态下倒装连接到元件搭载用基板20上。
具体地，配线层50包含倒装芯片连接用的基板电极51a和层叠封装用的基板电极51b。基板电极51a的表面由Ni/Au层53覆盖，设置在半导体元件30的电极形成面上的元件电极32和Ni/Au层53通过焊料36接合。密封树脂80设置在半导体元件30附近，包含基板电极51b的配线层50的一部分位于密封树脂80的外侧。为了露出基板电极51b，在保护层52上设置有开口，在该开口部分连接有层叠封装用的焊球90。
在焊球90和基板电极51b之间，设置有分隔层54。焊球90的安装结构与在实施方式1中示出的焊球70的安装结构相同。焊球90、保护层52、分隔层54、基板电极51b、配线层50分别与在图2中示出的焊球70、保护层62、分隔层64、外部连接区域61、配线层60相对应。
根据本实施方式，在作为POP基板使用的半导体模块中，不仅可以提高基板安装用的焊球的连接可靠性，还可以提高封装搭载用的焊球的连接可靠性。
(在便携式设备中的应用)
接下来，说明包括本发明的半导体模块的便携式设备。虽然作为便携式设备示出了搭载在手机中的例子，但是例如可以是个人用便携式信息终端(PDA)、数字摄像机(DVC)、音乐播放器、和数字照相机(DSC)等电子设备。
图7是示出包括实施方式的半导体模块10的手机的结构的图。手机1111构成为第一框体1112和第二框体1114由活动部1120连接的结构。第一框体1112和第二框体1114可以以活动部1120为轴转动。在第一框体1112上设置有显示文字、图像等信息的显示部1118和扬声器1124。在第二框体1114上设置有操作用按钮等操作部1122和话筒1126。并且，将本发明各实施方式的半导体模块中的任何一个搭载在如上所述的手机1111的内部。这样，作为搭载在手机中的本发明的半导体模块，可以作为用于驱动各电路的电源电路、产生RF的RF发生电路、DAC、编码器电路、作为手机的显示部中采用的液晶面板光源的背光的驱动电路等而采用。
图8是在图7中示出的手机的局部剖面图(第一框体1112的剖面图)。本发明实施方式的半导体模块10经由焊球70搭载在印刷基板1128上，经由这样的印刷基板1128与显示部1118等电连接。此外，在半导体模块10的背面侧(与焊球70相反的一侧的表面)上设置有金属基板等散热基板1116，例如从半导体模块10产生的热量不会积攒在第一框体1112的内部，可以有效地将热量释放到第一框体1112的外部。
根据包括本发明实施方式的半导体模块的便携式设备，可以得到以下效果。
在半导体模块10中，提高焊球70的连接可靠性的结果是，半导体模块10的动作可靠性得到提高，所以可提高搭载这样的半导体模块10的便携式设备的动作可靠性。
由于可以经由散热基板1116有效地将来自半导体模块10的热量释放到外部，所以半导体模块10的温度上升被抑制，导电性部件和配线层之间的热应力减小。因此，与没有设置散热基板1116的情况相比较，防止半导体模块内的导电性部件从配线层剥离，半导体模块10的可靠性(耐热可靠性)提高。结果，可以提高便携式设备的可靠性(耐热可靠性)。
由于可以将在上述实施方式中示出的半导体模块10小型化，所以可以谋求搭载了这样的半导体模块10的便携式设备的薄型化/小型化。
本发明并不限于上述的各实施方式，可以基于本领域技术人员的知识实施各种设计改变等变形，实施这样的变形的实施方式也包含在本发明的范围中。
例如，虽然在上述实施方式1中半导体元件30由引线接合而连接，但是也可以将半导体元件30进行倒装芯片连接。此外，虽然在上述各实施方式中构成元件搭载用基板20的绝缘树脂层40为单层，但是也可以将绝缘树脂层40设为多层，并在各层之间设置配线层。

Claims (14)

1.一种半导体模块，其特征在于，包括元件搭载用基板和半导体元件，
所述元件搭载用基板包含：基底、设置在所述基底的一个主表面的第一配线层、设置在所述基底的另一个主表面的第二配线层、以及覆盖所述基底的另一个主表面并且设置有使所述第二配线层的外部连接区域露出的开口的保护层，
所述半导体元件安装在所述基底的一个主表面侧，
所述外部连接区域的第二配线层的表面的位置比所述基底侧的保护层的底面更靠近所述基底侧。
2.根据权利要求1所述的半导体模块，其特征在于，在所述开口的周围，在所述基底侧的所述保护层的底面和所述第二配线层的表面之间产生间隙，所述外部连接区域比所述开口宽。
3.根据权利要求1所述的半导体模块，其特征在于，在所述外部连接区域之上形成有导电性分隔层，所述分隔层的表面的位置比所述基底侧的所述保护层的底面更靠近所述基底侧。
4.根据权利要求2所述的半导体模块，其特征在于，在所述外部连接区域之上形成有导电性分隔层，所述分隔层的表面的位置比所述基底侧的所述保护层的底面更靠近所述基底侧。
5.一种半导体模块，其特征在于，包括：
基底，
设置在所述基底的一个主表面的第一配线层，
设置在所述基底的另一个主表面的第二配线层，
覆盖所述基底的另一个主表面并且设置有使所述第二配线层的外部连接区域露出的开口的保护层，
安装在所述第二配线层的外部连接区域的外部连接电极，以及
安装在所述基底的一个主表面侧的半导体元件；
所述外部连接区域的第二配线层的表面的位置比所述基底侧的保护层的底面更靠近所述基底侧。
6.根据权利要求5所述的半导体模块，其特征在于，在所述开口的周围，在所述基底侧的所述保护层的底面和所述第二配线层的表面之间产生间隙，在该间隙中填充有所述外部连接电极。
7.根据权利要求5所述的半导体模块，其特征在于，在所述外部连接电极和所述配线层之间设置有与所述第二配线层相比与所述外部连接电极的润湿性高的分隔层。
8.根据权利要求6所述的半导体模块，其特征在于，在所述外部连接电极和所述配线层之间设置有与所述第二配线层相比与所述外部连接电极的润湿性高的分隔层。
9.一种便携式设备，其特征在于，搭载有权利要求1所记载的半导体模块。
10.一种便携式设备，其特征在于，搭载有权利要求2所记载的半导体模块。
11.一种便携式设备，其特征在于，搭载有权利要求3所记载的半导体模块。
12.一种便携式设备，其特征在于，搭载有权利要求5所记载的半导体模块。
13.一种便携式设备，其特征在于，搭载有权利要求6所记载的半导体模块。
14.一种便携式设备，其特征在于，搭载根据权利要求7所记载的半导体模块。
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