CN101801886A - 具有其表面已金属化的陶瓷体的结构部件 - Google Patents
具有其表面已金属化的陶瓷体的结构部件 Download PDFInfo
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- CN101801886A CN101801886A CN200880021824A CN200880021824A CN101801886A CN 101801886 A CN101801886 A CN 101801886A CN 200880021824 A CN200880021824 A CN 200880021824A CN 200880021824 A CN200880021824 A CN 200880021824A CN 101801886 A CN101801886 A CN 101801886A
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Abstract
随着大功率电子进入越来越高的电压范围对高绝缘电压和大的部分放电耐受度的要求越来越强烈。因此本发明建议一种具有陶瓷体(2)的结构部件(1)。所述陶瓷体在它的表面(3、4)上的至少一个区域用金属化部5、6;11)覆盖住,并且其中,该陶瓷体(2)为空间结构(7),并且在由相同的类型或者不相同的材料构成的金属化部5、6)的至少两个涂层之间,以及在金属化部涂层(5;11)和陶瓷之间的部分放电耐受度<20pC。
Description
本发明涉及一种具有一个陶瓷体的结构部件,所述陶瓷体在至少一个区域中在它的表面上用金属化部覆盖。
随着大功率电子装置越来越进入更高的电压范围关于高绝缘电压和大的部分放电耐受度的要求在增加。此外绝缘强度和部分放电耐受度和底板绝缘的厚度、材料和均质性,和壳体材料、填充材料有关,并且在必要时也和芯片的布局有关。
由以频率大体低于3KHz,并且主要是在间歇式运行时,例如主要是在牵引、提升和脉冲应用时,引起模块内部的连接,也就是粘接连接、芯片的背面钎焊,DCB/底板的钎焊和基质层(Al2O3或者AlN上的铜)的温度交变应力。单个层的不同的线膨胀系数在制造和运行期间引起热应力。这些应力最终导致材料疲劳和磨损。寿命(可能的换向循环的次数)随着在这些循环期间的芯片温度的变化幅度的提高而下降。
DE 10 2004 033 227 A1公开了一种板形的金属陶瓷基质。这种基质可靠地包含有<10pC的部分放电耐受度(Teilentladungsfestigkeit)。
本发明的任务是提供一种具有在它的表面上金属化的陶瓷体的结构部件。这种结构部件不仅是板形的,平整的,并且具有高的部分放电耐受度。
本发明的任务借助权利要求1的特性特征得以完成。在从属权利要求中介绍了本发明的一些有利的方案。
根据本发明的结构部件是立体设计。陶瓷体不是一个平板,而是一个三维的物体。这样例如可在一个平板上可连接另一些部件,这样就可以产生任何形状的物体。但是整个物体是整体的,也就是说它不是由单个部件组成。例如当多个另外的平板垂直在一个平板上,则例如可产生一个E形的总物体。散热器(Heatsink)例如具有这样的形状。
根据本发明,由相同类型的或者不同的材料构成的金属化部的至少两层之间,以及在金属化部的层和陶瓷之间的部分放电耐受度<20pC。按照规定的相同的或者不相同的测量方法,在相同的或者不相同的,或者变化的规定测量电压下或者在相同的或者不相同的或者变化的测量条件下达到这一部分放电耐受度。测量条件例如可以是压力或者温度或者空气湿度或者金属化部的相同的或者不相同的距离。
当在陶瓷体上施加金属化部时,或重叠的几个金属化部时可能在边缘区域形成气泡和空腔以及分离。在相连接的结构部件和金属化部之间的过渡处也会出现这种情况。在两个金属化部之间以及在一个金属化部和陶瓷体之间,或者在一个连接的结构部件和金属化部之间的过渡处的这些缺陷对部分放电耐受度有不良的影响。为了不超过所要求的<20pC的部分放电耐受度,这些缺陷处的直径不得超过100μm,并且其高度不得超过100μm。这个直径表示一个任意形成的缺陷的内接一个圆的投影。
此外通过金属化部的结构化形成的在结构部件的表面上的突起部或者凹陷形状的缺陷由于在这些部位的电场的干扰而对部分放电耐受度有影响。因此这些缺陷只允许有这样的边缘曲线,即它的曲率半径不低于10μm,这样就不超过所要求的<20pC的部分放电耐受度。
作为金属化部优选地金属以涂层或者薄膜或者薄片的形式全表面或者部分表面地和陶瓷体材料连接或机械形状配合连接。所述金属具有和陶瓷体相同或者不同的导热性。金属化部例如可由钨、银、金、铜、铂、钯、镍、铝或者钢以纯的或者技术的质量构成,或者由至少两个不同的金属的混合物构成。金属化部例如也可附加地或者单独地由反应焊料、软焊料或者硬焊料构成。
给以涂层或者薄膜或者薄片的形式金属化部的金属添加增加附着力的添加材料或者其它的添加材料,例如玻璃或者聚合的材料,或者可用这些材料给所述金属涂层,以提高陶瓷体上的金属化部的附着性。
金属化部的层或者一些层是在使用一种DCB方法(Direct CopperBonding-直接铜熔接),或者AMB方法(Active Metal Brazing-活性金属钎焊),或者丝网印刷方法,或者电解方法,或者化学沉积,或者蒸镀方法,或者借助粘接或者粘贴,或者这些方法的组合施加到对置的,和/或相邻的表面上的陶瓷体的表面上。
陶瓷体上的金属化部由每个金属化表面的至少一个层构成。金属化部作为金属体部分表面地,或者全表面地,或者部分地,或者全部地以平面平行或者几乎平面平行的形式或者任意几何形状成形地,或者这些形式组合地覆盖陶瓷体的表面。
金属化部的层厚度应低于2毫米,这样就不超过所要求的<20pC的部分放电耐受度。
陶瓷体上的一个或者多个金属化部可仅由铜构成。和陶瓷体的连接可借助丝网印刷方法,并且接着进行热处理,或者借助DCB方法完成。
在陶瓷体上的一个或者多个金属化部可仅由铝构成。和陶瓷体的连接可借助丝网印刷方法,并且接着进行热处理,或者借助AMB方法完成。
若应在陶瓷体的或者在一个金属化部的表面上施加另一个层,下述做法是有利的,即为了增加附着力施加一个中间层。这样一个中间层优选地具有≤20cm的厚度。若应借助DCB方法例如将由铜构成的金属化部施加到氮化铝-陶瓷上,则下述做法是有利的,即在陶瓷体的表面上产生一个由Al2O3构成的中间层。通过这一措施提高了带铜的金属化的附着强度。
至少一个金属化部和/或另一金属化部与陶瓷体的连接>90%。
至少一个金属化部用至少12N/厘米的附着强度和陶瓷体连接。通过这一措施保证,特别是通过热负荷也不会使金属化部从陶瓷体上分离。
结构部件的本体由陶瓷材料构成。所述陶瓷材料在它的组成上可和所要求的特性,例如绝缘、部分放电耐受度和热稳定性相协调。
陶瓷材料作为主成份含有50.1重量%至100重量%的ZrO2/HfO2,或者51.1重量%至100重量%的Al2O3,或者50.1重量%至100重量%的AlN,或者50.1重量%至100重量%的Si3N4,或者50.1重量%至100重量%的BeO,50.1重量%至100重量%的SiC,或者以规定的比例范围按任意组合的至少两个主成份的组合,以及作为副成份含有在至少一种氧化阶段里和/或化合物里的元素Ca、Sr、Si、Mg、B、Y、Sc、Ce、Cu、Zn、Pb,所述元素的氧化物和/或化合物单独地或者按规定份额范围以任意组合具有≤49.9重量%的份额。主成份和副成份在扣除≤3重量%的杂质份额的情况下以任意的组合彼此组合成一个100重量%的总组成。
优选地将结构部件的陶瓷体设计为散热件。这个散热件可以理解为这样的物体,即它支承着电气的或者电子的结构元件或者线路,并且它是如此形成的,即它可如此地排走在结构元件或者线路中出现的热量,即不出现可损害结构元件或者线路的蓄热。这个支承体是由这样一种材料构成的物体,即它不导电或者几乎不导电,并且具有良好的导热性能。用于这种物体的理想材料是陶瓷。
该物体是整件的,并且具有用于保护电子结构元件或线路的排热或者输热部件。优选地支承体是一个印制电路板,元件是孔、通道、肋,和/或空隙,可给它们提供热或者冷却介质。介质可以是流体或者气体。支承体,和/或冷却部件优选地由至少一个陶瓷的部件或者一个由不同的陶瓷材料的混合物构成。
借助一个实施例对本发明进行更加详细的说明。示出一个结构部件。它具有一个陶瓷体2。根据本发明该陶瓷体不是板形的。不是板形的意味着该陶瓷体2的上表面3和下表面4是如此设计的,即它们分别具有一个不同大小的表面。该陶瓷体为空间结构。结构部件1的上表面3在本实施例中具有一个平的表面。在这个上表面3上设置有不同的金属化的区域5。上表面3是一个线路载体。在陶瓷体2的上表面3的至少一个金属化部5上施加有至少一个另外的金属化部6。在本情况中这个另外的金属化部覆盖住第一金属化部5的表面的部分表面。
在本实施例中陶瓷体2为E形状。该陶瓷体是一个散热件。陶瓷体2的下侧面4具有冷却片7。这些冷却片7也设置一些金属化区域5。在这些金属化区域上例如可以钎焊一些电子结构部件。
在陶瓷体2的表面3上借助钎焊连接9将一个芯片8固定在一个金属化的区域5上。通过导线10将芯片和一个金属化的区域5连接。这个芯片8是一个热源。通过冷却片7将它的热量排走。
若应借助DCB方法将由铜构成的金属化部施加到氮化铝-陶瓷上,则下述做法是有利的,即在陶瓷体的表面上设置一个由Al2O3构成的中间层。在本实施例中在冷却片7上在陶瓷体2的左侧示出了这个中间层。假设这个陶瓷体2是由氮化铝构成,在由铜构成的金属化部11和陶瓷体2的表面之间产生一个由Al2O3构成的中间层12。借助焊料13将电子结构部件14和由铜11构成的金属化部连接。
Claims (20)
1.具有陶瓷体(2)的结构部件(1),其在至少一个区域中在它的表面(3、4)上用金属化部(5、6;11)覆盖住,其特征在于,在由相同类型的或者不同的材料构成的金属化部(5、6)的至少两个层之间,以及在金属化部的层(5;11)和陶瓷之间的部分放电耐受度<20pC;并且陶瓷体(2)为空间结构(7)。
2.按照权利要求1所述的结构部件,其特征在于,在两个金属化部(5、6)之间的过渡处,在金属化部(5;11)和陶瓷体(2)之间的过渡处,以及在连接的结构部件(8;14)和金属化部(5;11)之间的过渡处的形成空腔的缺陷处直径不超过100μm,高度不超过100μm。
3.按照权利要求1或2所述的结构部件,其特征在于,在结构部件的表面上突起部或者凹陷处形式的由结构化的金属化部(5、6;11)形成的缺陷处,具有边缘曲线,该边缘曲线的曲率半径不低于10μm。
4.按照权利要求1至3的任一项所述的结构部件,其特征在于,作为金属化部(5,6;11)优选地金属以涂层或者薄膜或者薄片的形式材全表面或者部分表面地和陶瓷体(2)材料连接或形状配合连接,所述金属具有和支承体相同或者不同的导热性。
5.按照权利要求1至4的任一项所述的结构部件,其特征在于,金属化部(5,6;11)由钨、银、金、铜、铂、钯、镍、铝或者钢以纯的或者技术的质量构成,或者由至少两种不同的金属的混合物构成,和/或附加地或者单独地由反应焊料、软焊料或者硬焊料(9;13)构成。
6.按照权利要求1至5的任一项所述的结构部件,其特征在于,给以涂层或者薄膜或者薄片形式金属化部(5,6;11)的金属添加增加附着力的添加料或者其它的添加料,如特别是玻璃或者聚合材料,或者用这些材料给所述金属涂层。
7.按照权利要求1至6的任一项所述的结构部件,其特征在于,陶瓷体(2)上的金属化部(5,6;11)由至少一个层构成;这个层是在使用DCB方法(直接铜熔接),或者AMB方法(活性金属钎焊),或者丝网印刷方法,或者电解方法,或者化学沉积,或者蒸镀方法,或者借助粘接或者粘贴,或者这些方法的组合施加到对置的和/或相邻的表面上的陶瓷体的表面上。
8.按照权利要求1至7的任一项所述的结构部件,其特征在于,金属化部(5,6;11)作为金属体,部分表面、或者全表面、或者部分地、或者全部地以平面平行或者几乎平面平行的形式或者任意几何形状成形地,或者以这些形式的组合覆盖陶瓷体(2)的表面(3,4)。
9.按照权利要求1至8的任一项所述的结构部件,其特征在于,在陶瓷体(2)的至少一个金属化部(5)上施加至少一个另外的金属化部(6),它部分表面或者全表面地覆盖其表面。
10.按照权利要求1至9的任一项所述的结构部件,其特征在于,金属化部(5,6;11)的层厚度低于2毫米。
11.按照权利要求1至10的任一项所述的结构部件,其特征在于,陶瓷体(2)上的一个或者多个金属化部(11)仅由铜构成;并且借助丝网印刷方法和接着的热处理,或者DCB方法完成和陶瓷体(2)的连接。
12.按照权利要求1至10的任一项所述的结构部件,其特征在于,陶瓷体(2)上的一个或者多个金属化部仅由铝构成;并且借助丝网印刷方法和接着的热处理,或者AMB-工序完成和陶瓷体(2)的连接。
13.按照权利要求1至12的任一项所述的结构部件,其特征在于,至少一个金属化部,和/或另一金属化部(5,6;11)到陶瓷体(2)上的连接大于90%。
14.按照权利要求1至13的任一项所述的结构部件,其特征在于,所述至少一个金属化部(5,6;11)用至少12N/cm的附着强度和陶瓷体(2)连接。
15.按照权利要求1至14的任一项所述的结构部件,其特征在于,金属化部(5,6;11)的层的厚度≤2毫米。
16.按照权利要求1至15的任一项所述的结构部件,其特征在于,在陶瓷体(2)的至少一个表面上,或者在金属化部的至少一个表面上,为了增加另一层(11)或者结构部件的附着力,施加中间层(12)。
17.按照权利要求16所述的结构部件,其特征在于,中间层(12)的厚度≤20μm。
18.按照权利要求16或17所述的结构部件,其特征在于,中间层(12)由Al2O3构成。
19.按照权利要求1至18的任一项所述的结构部件,其特征在于,陶瓷材料作为主成份含有50.1重量%至100重量%的ZrO2/HfO2,或者50.1重量%至100重量%的Al2O3,或者50.1重量%至100重量%的AlN,或者50.1重量%至100重量%的Si3N4,或者50.1重量%至100重量%的BeO,50.1重量%至100重量%的SiC,或者以规定的比例范围按任意组合的至少两个主成份的组合,以及作为副成份含有在至少一种氧化阶段里和/或化合物里的元素Ca、Sr、Si、Mg、B、Y、Sc、Ce、Cu、Zn、Pb,所述元素的氧化物和/或化合物单独地或者按规定份额范围以任意组合具有≤49.9重量%的份额;并且主成份和副成份扣除≤3重量%份额杂质的情况下以任意的组合彼此组合成100重量%的总组成。
20.按照权利要求1至19的任一项所述的结构部件,其特征在于,陶瓷体(2)设置散热片(7),作为散热件。
Applications Claiming Priority (3)
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DE102007019635 | 2007-04-24 | ||
DE102007019635.2 | 2007-04-24 | ||
PCT/EP2008/054625 WO2008128944A1 (de) | 2007-04-24 | 2008-04-17 | Bauteil mit einem keramikkörper, dessen oberfläche metallisiert ist |
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CN101801886A true CN101801886A (zh) | 2010-08-11 |
CN101801886B CN101801886B (zh) | 2014-07-16 |
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US (1) | US20100112372A1 (zh) |
EP (1) | EP2142488A1 (zh) |
JP (1) | JP5649957B2 (zh) |
KR (1) | KR101519813B1 (zh) |
CN (1) | CN101801886B (zh) |
DE (1) | DE102008001220A1 (zh) |
WO (1) | WO2008128944A1 (zh) |
Cited By (6)
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CN104617204A (zh) * | 2015-01-16 | 2015-05-13 | 隆科电子(惠阳)有限公司 | 一种碳化硅基电路板及其制备方法 |
CN105758058A (zh) * | 2014-12-19 | 2016-07-13 | 中国电子科技集团公司第十八研究所 | 一种高电压密集型温差电致冷器及其制备方法 |
CN106145952A (zh) * | 2015-03-23 | 2016-11-23 | 隆科电子(惠阳)有限公司 | 高绝缘碳化硅陶瓷基板与碳化硅基电路板及其制备方法 |
CN107078175A (zh) * | 2014-08-12 | 2017-08-18 | 陶瓷技术有限责任公司 | 具有太阳能电池的陶瓷承载体 |
CN109336645A (zh) * | 2013-06-05 | 2019-02-15 | 陶瓷技术有限责任公司 | 在陶瓷基材上的金属层 |
CN110382445A (zh) * | 2017-02-28 | 2019-10-25 | 三菱综合材料株式会社 | 铜-陶瓷接合体、绝缘电路基板、铜-陶瓷接合体的制造方法及绝缘电路基板的制造方法 |
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DE102009025033A1 (de) | 2009-06-10 | 2010-12-16 | Behr Gmbh & Co. Kg | Thermoelektrische Vorrichtung und Verfahren zum Herstellen einer thermoelektrischen Vorrichtung |
KR102421016B1 (ko) * | 2014-09-09 | 2022-07-13 | 세람테크 게엠베하 | 다중-층 냉각 엘리먼트 |
KR20190137086A (ko) * | 2017-04-06 | 2019-12-10 | 세람테크 게엠베하 | 2개의 측들 상에서 냉각되는 회로 |
DE102018215224A1 (de) * | 2018-09-07 | 2019-12-19 | Continental Automotive Gmbh | Vorrichtung zur Energieübertragung mit kühlendem Keramikelement |
KR20240038268A (ko) * | 2022-09-16 | 2024-03-25 | 주식회사 아모그린텍 | 히트싱크 일체형 파워모듈용 기판 및 그 제조방법 |
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JPS6370545A (ja) * | 1986-09-12 | 1988-03-30 | Hitachi Ltd | 半導体パツケ−ジ |
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JPH0437662A (ja) * | 1990-06-01 | 1992-02-07 | Murata Mfg Co Ltd | セラミック基板と金属板の接合構造 |
EP0544329A3 (en) * | 1991-11-28 | 1993-09-01 | Kabushiki Kaisha Toshiba | Semiconductor package |
JP3208438B2 (ja) * | 1992-01-16 | 2001-09-10 | イビデン株式会社 | 金属層を備えたセラミックス基板とその製造方法 |
JPH10284808A (ja) * | 1997-04-08 | 1998-10-23 | Denki Kagaku Kogyo Kk | 回路基板 |
JP3339572B2 (ja) * | 1999-10-04 | 2002-10-28 | 日本電気株式会社 | 半導体装置及びその製造方法 |
JP5038565B2 (ja) * | 2000-09-22 | 2012-10-03 | 株式会社東芝 | セラミックス回路基板およびその製造方法 |
JP2004335877A (ja) * | 2003-05-09 | 2004-11-25 | Nissin Electric Co Ltd | 樹脂モールド型積層セラミックコンデンサ |
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DE102004033933B4 (de) * | 2004-07-08 | 2009-11-05 | Electrovac Ag | Verfahren zum Herstellen eines Metall-Keramik-Substrates |
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JP2005101624A (ja) * | 2004-10-15 | 2005-04-14 | Kyocera Corp | パワーモジュール用配線基板 |
TWI449137B (zh) * | 2006-03-23 | 2014-08-11 | Ceramtec Ag | 構件或電路用的攜帶體 |
-
2008
- 2008-04-17 CN CN200880021824.XA patent/CN101801886B/zh not_active Expired - Fee Related
- 2008-04-17 WO PCT/EP2008/054625 patent/WO2008128944A1/de active Application Filing
- 2008-04-17 KR KR1020097024346A patent/KR101519813B1/ko not_active IP Right Cessation
- 2008-04-17 JP JP2010504630A patent/JP5649957B2/ja not_active Expired - Fee Related
- 2008-04-17 DE DE102008001220A patent/DE102008001220A1/de not_active Withdrawn
- 2008-04-17 US US12/596,880 patent/US20100112372A1/en not_active Abandoned
- 2008-04-17 EP EP08736298A patent/EP2142488A1/de not_active Ceased
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CN109336645A (zh) * | 2013-06-05 | 2019-02-15 | 陶瓷技术有限责任公司 | 在陶瓷基材上的金属层 |
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CN104617204A (zh) * | 2015-01-16 | 2015-05-13 | 隆科电子(惠阳)有限公司 | 一种碳化硅基电路板及其制备方法 |
CN104617204B (zh) * | 2015-01-16 | 2017-07-14 | 隆科电子(惠阳)有限公司 | 一种碳化硅基电路板及其制备方法 |
CN106145952A (zh) * | 2015-03-23 | 2016-11-23 | 隆科电子(惠阳)有限公司 | 高绝缘碳化硅陶瓷基板与碳化硅基电路板及其制备方法 |
CN106145952B (zh) * | 2015-03-23 | 2019-06-11 | 隆科电子(惠阳)有限公司 | 高绝缘碳化硅陶瓷基板与碳化硅基电路板及其制备方法 |
CN110382445A (zh) * | 2017-02-28 | 2019-10-25 | 三菱综合材料株式会社 | 铜-陶瓷接合体、绝缘电路基板、铜-陶瓷接合体的制造方法及绝缘电路基板的制造方法 |
Also Published As
Publication number | Publication date |
---|---|
EP2142488A1 (de) | 2010-01-13 |
CN101801886B (zh) | 2014-07-16 |
KR20100017259A (ko) | 2010-02-16 |
KR101519813B1 (ko) | 2015-05-14 |
DE102008001220A1 (de) | 2008-10-30 |
JP5649957B2 (ja) | 2015-01-07 |
US20100112372A1 (en) | 2010-05-06 |
JP2010526008A (ja) | 2010-07-29 |
WO2008128944A1 (de) | 2008-10-30 |
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