CN101748379B - Automatic horizontal silicon substrate film producing device - Google Patents
Automatic horizontal silicon substrate film producing device Download PDFInfo
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- CN101748379B CN101748379B CN2010103006637A CN201010300663A CN101748379B CN 101748379 B CN101748379 B CN 101748379B CN 2010103006637 A CN2010103006637 A CN 2010103006637A CN 201010300663 A CN201010300663 A CN 201010300663A CN 101748379 B CN101748379 B CN 101748379B
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- 239000000758 substrate Substances 0.000 title claims abstract description 36
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 10
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 10
- 239000010703 silicon Substances 0.000 title claims abstract description 10
- 230000007704 transition Effects 0.000 claims abstract description 47
- 238000010438 heat treatment Methods 0.000 claims abstract description 32
- 238000000576 coating method Methods 0.000 claims abstract description 13
- 238000001816 cooling Methods 0.000 claims abstract description 12
- 239000011248 coating agent Substances 0.000 claims abstract description 11
- 238000013461 design Methods 0.000 claims abstract description 11
- 230000008021 deposition Effects 0.000 claims description 65
- 239000013049 sediment Substances 0.000 claims description 43
- 230000008878 coupling Effects 0.000 claims description 12
- 238000010168 coupling process Methods 0.000 claims description 12
- 238000005859 coupling reaction Methods 0.000 claims description 12
- 230000005540 biological transmission Effects 0.000 claims description 7
- 230000004888 barrier function Effects 0.000 claims description 6
- 238000005516 engineering process Methods 0.000 claims description 6
- 230000007246 mechanism Effects 0.000 claims description 5
- 230000002457 bidirectional effect Effects 0.000 claims description 4
- 238000005259 measurement Methods 0.000 claims description 4
- 238000005096 rolling process Methods 0.000 claims description 4
- 238000000151 deposition Methods 0.000 abstract description 71
- 238000000034 method Methods 0.000 abstract description 11
- 238000012423 maintenance Methods 0.000 abstract description 2
- 238000007599 discharging Methods 0.000 abstract 1
- 238000001035 drying Methods 0.000 abstract 1
- 239000007888 film coating Substances 0.000 abstract 1
- 238000009501 film coating Methods 0.000 abstract 1
- 239000010408 film Substances 0.000 description 12
- 238000004519 manufacturing process Methods 0.000 description 11
- 230000008569 process Effects 0.000 description 10
- 238000006243 chemical reaction Methods 0.000 description 5
- 238000011109 contamination Methods 0.000 description 3
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 3
- 230000009467 reduction Effects 0.000 description 3
- 230000002459 sustained effect Effects 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- 238000005137 deposition process Methods 0.000 description 2
- 230000007812 deficiency Effects 0.000 description 1
- 238000003912 environmental pollution Methods 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 238000002203 pretreatment Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
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Abstract
The invention relates to the field of solar energy application, in particular to an automatic horizontal silicon substrate film producing device. The device comprises a heating section, a vacuum transition section 1, a depositing section, a vacuum transition section 2 and a cooling section. An automatic gate valve is arranged between the working rooms; the heating section and the cooling section are anti-vacuum sections; the depositing section comprises a plurality of depositing modules; each depositing module comprise a depositing chamber, a vacuum transition chamber, a driving device, a position measuring device, a vacuumizing device, a distributing device and a discharging device; two depositing chambers are symmetrically or asymmetrically distributed on two sides of the vacuum transition chamber; each depositing chamber is connected with one drying pump; the depositing chamber and the vacuum transition chamber share a set of vacuumizing device; two ends of the depositing module are provided with two connecting devices which have a same size and shape or match with each other; and a continuous coating film depositing section is formed by connecting a plurality of parallel depositing modules by the connecting device. The device can change the number of the depositing modules according to the film coating technique and different demands of capacity design, and has wide application range, high producing efficiency and convenient maintenance.
Description
Technical field:
The present invention relates to the Application Areas of sun power, specifically a kind of adopt modular design, can be according to the flexible automatic horizontal silicon substrate film PECVD production equipment of adjustment of customer demand.
Background technology:
As everyone knows; Being on the rise of energy dilemma and environmental pollution; Promoted developing rapidly of photovoltaic industry greatly; In photovoltaic cell family, silicon-base thin-film battery is not owing to receive the restriction and unique advantages such as low light level power generation performance of silicon material shortage, and increasing photovoltaic field investor has invested the silicon-base thin-film battery production field with the sight of noting.
In the silicon-base thin-film battery manufacturing processed; Most important producing apparatus is exactly the PECVD depositing device that is used for the depositing silicon base film; The technical threshold that this manufacturing field of equipment needs is higher; One to grasp in several abroad companies (Oerlikon, AppliedMaterials and ULVAC) hand firmly, and domestic photovoltaic enterprise buys suite of equipment with high price from these several companies.What use in the market generally is flat locellus continuous coating apparatus, adopts independent chamber to deposit different retes successively.But traditional flat fraction continuous coating apparatus robotization, integrated degree are lower, and the position relative fixed of each chamber can not be used alternatingly, if the centre has a certain chamber to break down maybe need safeguard whole process of production is interrupted.And general a set of equipment is only applicable to a fixed process system, in case process system is adjusted compelled the eliminating with regard to might adapting to new process system, brings about great losses.The problems referred to above are present in this industry always, do not have good solution so far.
Summary of the invention:
The objective of the invention is to overcome the deficiency of above-mentioned prior art, provide the good employing modular design of a kind of result of use, can be according to the flexible automatic horizontal silicon substrate film PECVD production equipment of adjustment of customer demand.
The present invention can reach through following measure:
A kind of automatic horizontal silicon substrate film producing device is characterized in that being made up of heating zone, vacuum transition section 1, deposition section, vacuum transition section 2, cooling section, and the automatic brake plate valve is loaded between each working spaces, and heating zone and cooling section are antivacuum section.
The deposition section is made up of at least two deposition module among the present invention; Each deposition module obtains device, air distributing device and gas barrier by sediment chamber, vacuum transition chamber, transmission mechanism, position-measurement device, vacuum and forms; The sediment chamber is distributed in the both sides of vacuum transition chamber; Each sediment chamber links to each other with a dried pump of technology respectively; The shared cover vacuum of sediment chamber and vacuum transition chamber obtains device, the deposition module two ends are equipped with coupling device, and the size and dimension of coupling device is identical or cooperatively interact; Through coupling device the deposition module that is arranged in parallel is coupled together the deposition section that forms a continuous coating, the quantity that this device can increase and decrease different film deposition modules according to the demands of different that coating process and production capacity design is mated.
Heating zone device of the present invention adopts the heating of continuous gradient heating means, but gradient substrate is heated to design temperature, this device is the highest can be with substrate even heating to 350 degree centigrade.
Plate valve rolls automatically with being equipped with between the vacuum transition chamber in the sediment chamber in the deposition module of the present invention, and vacuum tightness can be provided with vacuum pressure reduction as requested between sediment chamber and the vacuum transition chamber, avoids crossed contamination.
The quantity that deposits each film deposition module in the section among the present invention can be mated arrangement according to the difference of required time of depositional coating, to obtain optimum working efficiency.
Grating chi and fine motion cylinder are equipped with in the positive plate below in the sediment chamber of the present invention, can accurately control the positive plate adjustable height, and tolerance range can reach 10 microns.
Be provided with horizontal roller and vertical roller in the vacuum transition chamber in the deposition module of the present invention; Vertically roller is installed in the middle of the horizontal roller, and laterally the roller stationkeeping is constant, and vertically roller can bidirectional rolling; And vertically the roller below is equipped with the fine motion cylinder and can regulates up-down; When needs were fed forward substrate, vertically roller was in horizontal roller sustained height, and laterally roller work is fed forward substrate; When needs are delivered into the sediment chamber with substrate or from the sediment chamber substrate are exported, then rise vertical roller, the vertically reverse work of roller.
Sediment chamber and vacuum transition chamber have all been installed temperature survey and heating control apparatus in the deposition module of the present invention; Can make in the substrate transport process and keep constant temperature; When different retes need different temperature of reaction, also can accurately control the temperature of reaction of sediment chamber.
The deposition control of the transmission of substrate of the present invention and each rete etc. are all omnidistance to be controlled by computer automatically, need not any artificial manual operation.
The present invention compared with prior art has the following advantages:
1, heating zone of the present invention selects for use the gradient-heated mode to heat, and rate of heating is fast, is heated evenly.
2, the present invention's section of deposition adopts modular design, and the coupling device that size and dimension is identical or cooperatively interact is all adopted at each deposition module two ends, is convenient to install.
3, two sediment chambers in each deposition module can not influence the normal operation of whole production line in the alternation of when maintenance.
4, each deposition module structure of deposition section is identical, only relies on deposition process parameters and process gas to decide the different rete of deposition.Can be according to the different purposes of arbitrarily changing each deposition module of technical recipe, handiness is high.
5, the quantity of different film deposition modules can be mated according to the difference of depositing time; What depositing time was short can only need a row deposition module; The connected multiple row deposition module that depositing time is long; Make that each sediment chamber all is in the continuous firing state that do not rest in the deposition process, thereby improved overall throughput and production efficiency.
6, the automatic brake plate valve is housed in the deposition module between sediment chamber and vacuum transition chamber,, vacuum tightness can be provided with vacuum pressure reduction as requested between sediment chamber and the vacuum transition chamber, avoids crossed contamination, improves film quality.
7, the present invention has really realized robotization, and whole process need not to operate manually, has improved control accuracy, has practiced thrift production cost.
Description of drawings:
Fig. 1 is a structural representation of the present invention.
Fig. 2, Fig. 3 are the structural representation of the deposition module among the present invention.
Mark among the figure: heating zone (1); Automatic brake plate valve (2); Vacuum transition section 1 (3); Deposition section (4); Vacuum transition section 2 (5); Cooling section (6); Deposition module (7); Sediment chamber (7-1); RF power interface (7-1-1); Process gas interface (7-1-2); Negative plate (7-1-3); Positive plate (7-1-4); Positive plate ground connection (7-1-5); Fine motion cylinder (the control positive plate goes up and down) (7-1-6); Gas barrier interface (7-1-7); Vacuum transition chamber (7-2); Horizontal roller (7-2-1); Vertical roller (7-2-2); Fine motion cylinder (controlling vertical roller goes up and down) (7-2-3); Vacuum obtains device interface (7-2-4); Gas barrier (7-3); The dried pump of technology (7-3-1); Vacuum obtains device (7-4).
Embodiment:
Below in conjunction with accompanying drawing the present invention is further described:
A kind of automatic horizontal silicon substrate film producing device is characterized in that being made up of heating zone, vacuum transition section 1, deposition section, vacuum transition section 2, cooling section, and the automatic brake plate valve is loaded between each working spaces, and heating zone and cooling section are antivacuum section.
The deposition section is made up of at least two deposition module among the present invention; Each deposition module obtains device, air distributing device and gas barrier by sediment chamber, vacuum transition chamber, transmission mechanism, position-measurement device, vacuum and forms; The sediment chamber is distributed in the both sides of vacuum transition chamber; Each sediment chamber links to each other with a dried pump of technology respectively; The shared cover vacuum of sediment chamber and vacuum transition chamber obtains device, the deposition module two ends are equipped with coupling device, and the size and dimension of coupling device is identical or cooperatively interact; Through coupling device the deposition module that is arranged in parallel is coupled together the deposition section that forms a continuous coating, the quantity that this device can increase and decrease different film deposition modules according to the demands of different that coating process and production capacity design is mated.
Heating zone device of the present invention adopts the heating of continuous gradient heating means, but gradient substrate is heated to design temperature, this device is the highest can be with substrate even heating to 350 degree centigrade.
Plate valve rolls automatically with being equipped with between the vacuum transition chamber in the sediment chamber in the deposition module of the present invention, and vacuum tightness can be provided with vacuum pressure reduction as requested between sediment chamber and the vacuum transition chamber, avoids crossed contamination.
The quantity that deposits each film deposition module in the section among the present invention can be mated arrangement according to the difference of required time of depositional coating, to obtain optimum working efficiency.
Grating chi and fine motion cylinder are equipped with in the positive plate below in the sediment chamber of the present invention, can accurately control the positive plate adjustable height, and tolerance range can reach 10 microns.
Be provided with horizontal roller and vertical roller in the vacuum transition chamber in the deposition module of the present invention; Vertically roller is installed in the middle of the horizontal roller, and laterally the roller stationkeeping is constant, and vertically roller can bidirectional rolling; And vertically the roller below is equipped with the fine motion cylinder and can regulates up-down; When needs were fed forward substrate, vertically roller was in horizontal roller sustained height, and laterally roller work is fed forward substrate; When needs are delivered into the sediment chamber with substrate or from the sediment chamber substrate are exported, then rise vertical roller, the vertically reverse work of roller.
Sediment chamber and vacuum transition chamber have all been installed temperature survey and heating control apparatus in the deposition module of the present invention; Can make in the substrate transport process and keep constant temperature; When different retes need different temperature of reaction, also can accurately control the temperature of reaction of sediment chamber.
The deposition control of the transmission of substrate of the present invention and each rete etc. are all omnidistance to be controlled by computer automatically, need not any artificial manual operation.
As shown in Figure 1, device provided by the invention is made up of heating zone (1), vacuum transition section 1 (3), deposition section (4), vacuum transition section 2 (5), cooling section (6), and automatic brake plate valve (2) is loaded between each working spaces, and heating zone (1) and cooling section (6) are antivacuum section.The deposition section is made up of several deposition module.
As shown in Figure 2; Each deposition module obtains device (7-4), air distributing device and gas barrier (7-3) by sediment chamber (7-1), vacuum transition chamber (7-2), transmission mechanism, position-measurement device, vacuum and forms; Two sediment chambers (7-1) are arranged in the both sides of vacuum transition chamber (7-2) symmetrical or asymmetricly; Each sediment chamber links to each other with a dried pump of technology (7-3-1) respectively, and the shared cover vacuum of sediment chamber (7-1) and vacuum transition chamber (7-2) obtains device (7-4).Deposition module (7) two ends are equipped with the coupling device that size and dimension is identical or cooperatively interact; Through coupling device several deposition module that are arranged in parallel (7) are coupled together the deposition section (4) that forms a continuous coating; The quantity of the deposition used deposition module of each rete (7) can be mated arrangement according to the difference of required time of depositional coating in the technical recipe in the deposition section (4), to obtain optimum working efficiency.
Be provided with horizontal roller (7-2-1) and vertical roller (7-2-2) in the vacuum transition chamber (7-2), vertically roller (7-2-2) is installed in the middle of the horizontal roller (7-2-1).Laterally roller (7-2-1) stationkeeping is constant, and vertically roller (7-2-2) can bidirectional rolling, and vertically roller (7-2-2) below is equipped with the fine motion cylinder and can regulates up-down.When needs were fed forward substrate, vertically roller (7-2-2) was in horizontal roller (7-2-1) sustained height, laterally roller (7-2-1) work; When needs are delivered into the sediment chamber with substrate or from the sediment chamber substrate are exported, then rise vertical roller, the vertically reverse work of roller (7-2-2).Substrate is delivered into sediment chamber (7-1) and is on the positive plate (7-1-4), and positive plate (7-1-4) upwards rises certain altitude, the beginning deposition reaction.Grating chi and fine motion cylinder (7-1-6) are equipped with in positive plate (7-1-4) below, can accurately control positive plate (7-1-4) adjustable height, and tolerance range can reach 10 microns.After deposition finished, positive plate (7-1-4) descended and returns back to former height, and the automatic brake plate valve between sediment chamber (7-1) and the vacuum transition chamber (7-2) is opened, and vertically roller (7-2-2) work transfers out sediment chamber (7-1) with substrate.
Working process of the present invention is following:
Among the present invention; Said heating zone (1) is used for the clean substrate of gradient-heated pre-treatment; Heating zone (1) can be heated to design temperature (reaching as high as 350 degrees centigrade) with substrate according to processing requirement, and the substrate that is heated to design temperature then is sent to vacuum transition chamber 1 (3) through transmission mechanism, and automatic brake plate valve (2) cuts out; Heating zone (1) and vacuum transition section 1 (3) are kept apart, and heating zone (1) is antivacuum section.Substrate is delivered to the deposition section (4) from vacuum transition section 1 (3), in each deposition module, deposits each rete successively, after be transported in the cooling section (6) after the vacuum transition section 2 (5) and be cooled to room temperature.
Claims (2)
1. automatic horizontal silicon substrate film producing device; It is characterized in that forming by heating zone, vacuum transition section 1, deposition section, vacuum transition section 2, cooling section; The automatic brake plate valve is loaded between each working spaces, and heating zone and cooling section are antivacuum section, and heating zone adopts the heating of continuous gradient heating means; Gradient substrate is heated to design temperature, can be with substrate even heating to 350 degree centigrade; The deposition section is made up of at least two deposition module; The quantity of each film deposition module is mated arrangement according to the difference of required time of depositional coating in the deposition section; Each deposition module obtains device, air distributing device and gas barrier by sediment chamber, vacuum transition chamber, transmission mechanism, position-measurement device, vacuum to be formed, and the sediment chamber is distributed in the both sides of vacuum transition chamber, and plate valve rolls automatically with being equipped with between the vacuum transition chamber in the sediment chamber in the deposition module; Each sediment chamber links to each other with a dried pump of technology respectively; The shared cover vacuum of sediment chamber and vacuum transition chamber obtains device, is provided with horizontal roller and vertical roller in the vacuum transition chamber, and vertically roller is installed in the middle of the horizontal roller; Laterally the roller stationkeeping is constant; Vertically roller bidirectional rolling, and vertical roller below is equipped with regulates the fine motion cylinder of up-down, and the deposition module two ends are equipped with coupling device; The size and dimension of coupling device is identical or cooperatively interact, and through coupling device the deposition module that is arranged in parallel is coupled together the deposition section that forms a continuous coating; Sediment chamber and vacuum transition chamber have all been installed temperature survey and heating control apparatus in the deposition module.
2. a kind of automatic horizontal silicon substrate film producing device according to claim 1 is characterized in that grating chi and fine motion cylinder are equipped with in the positive plate below in the sediment chamber.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010103006637A CN101748379B (en) | 2010-01-25 | 2010-01-25 | Automatic horizontal silicon substrate film producing device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010103006637A CN101748379B (en) | 2010-01-25 | 2010-01-25 | Automatic horizontal silicon substrate film producing device |
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| Publication Number | Publication Date |
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| CN101748379A CN101748379A (en) | 2010-06-23 |
| CN101748379B true CN101748379B (en) | 2012-07-25 |
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| CN2010103006637A Active CN101748379B (en) | 2010-01-25 | 2010-01-25 | Automatic horizontal silicon substrate film producing device |
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Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103014678A (en) * | 2011-09-20 | 2013-04-03 | 吉富新能源科技(上海)有限公司 | Silicon film plating by using unique transmission mechanism sheet transmission technology |
| CN102534573B (en) * | 2012-01-10 | 2013-10-23 | 北京航空航天大学 | Plasma enhanced chemical vapor deposition vacuum equipment |
| CN108061808B (en) * | 2016-11-08 | 2021-02-23 | 中国科学院苏州纳米技术与纳米仿生研究所 | Vacuum interconnection system and method for nano material experiment |
| CN109207966A (en) * | 2018-10-23 | 2019-01-15 | 杭州海莱德智能科技有限公司 | A kind of building block system panel PECVD coating system |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2907404B2 (en) * | 1991-04-30 | 1999-06-21 | キヤノン株式会社 | Deposition film forming equipment |
| US6352591B1 (en) * | 1996-11-13 | 2002-03-05 | Applied Materials, Inc. | Methods and apparatus for shallow trench isolation |
| CN2602034Y (en) * | 2003-01-28 | 2004-02-04 | 林政乾 | Continuous deposition and sputter machine |
| CN201069777Y (en) * | 2007-07-10 | 2008-06-04 | 仕贯真空科技股份有限公司 | Process device for improving productivity solar battery |
| CN101339967A (en) * | 2008-08-19 | 2009-01-07 | 上海曙海太阳能有限公司 | Two-chamber alternative amorphous silicon photovoltaic film chemical vapour deposition equipment |
-
2010
- 2010-01-25 CN CN2010103006637A patent/CN101748379B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2907404B2 (en) * | 1991-04-30 | 1999-06-21 | キヤノン株式会社 | Deposition film forming equipment |
| US6352591B1 (en) * | 1996-11-13 | 2002-03-05 | Applied Materials, Inc. | Methods and apparatus for shallow trench isolation |
| CN2602034Y (en) * | 2003-01-28 | 2004-02-04 | 林政乾 | Continuous deposition and sputter machine |
| CN201069777Y (en) * | 2007-07-10 | 2008-06-04 | 仕贯真空科技股份有限公司 | Process device for improving productivity solar battery |
| CN101339967A (en) * | 2008-08-19 | 2009-01-07 | 上海曙海太阳能有限公司 | Two-chamber alternative amorphous silicon photovoltaic film chemical vapour deposition equipment |
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| CN101748379A (en) | 2010-06-23 |
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Effective date of registration: 20180530 Address after: 264200 -516-39, chess Hill Road, Cao Miao zi Town, Lingang Economic and Technological Development Zone, Weihai, Shandong Patentee after: WEIHAI ZHONGBO NEW MATERIAL TECHNOLOGY R & D CO.,LTD. Address before: 264200 Huan Shan Road, Weihai economic and Technological Development Zone, Shandong Patentee before: Weihai China Glass Solar Co.,Ltd. |
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Effective date of registration: 20240115 Address after: Room 202, Building 1, No. 66 Sibo Road, Sijing Town, Songjiang District, Shanghai Patentee after: China Glass New Energy (Shanghai) New Materials Technology Development Co.,Ltd. Address before: 264200 -516-39, chess Hill Road, Cao Miao zi Town, Lingang Economic and Technological Development Zone, Weihai, Shandong Patentee before: WEIHAI ZHONGBO NEW MATERIAL TECHNOLOGY R & D CO.,LTD. |
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