CN101681941B - Solar cell and method of fabricating the same - Google Patents

Solar cell and method of fabricating the same Download PDF

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Publication number
CN101681941B
CN101681941B CN2008800179067A CN200880017906A CN101681941B CN 101681941 B CN101681941 B CN 101681941B CN 2008800179067 A CN2008800179067 A CN 2008800179067A CN 200880017906 A CN200880017906 A CN 200880017906A CN 101681941 B CN101681941 B CN 101681941B
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semiconductor layer
electrode
solar cell
pillars
substrate
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CN101681941A (en
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洪震
金宰湖
申傛禹
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Jusung Engineering Co Ltd
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Jusung Engineering Co Ltd
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Priority claimed from PCT/KR2008/003010 external-priority patent/WO2008147116A2/en
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    • H—ELECTRICITY
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    • H01L31/035272—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier
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    • H01L31/054—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
    • H01L31/056—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means the light-reflecting means being of the back surface reflector [BSR] type
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    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/52—PV systems with concentrators
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/548—Amorphous silicon PV cells

Abstract

A solar cell includes a first electrode on a substrate; a plurality of pillars on the first electrode; a semiconductor layer on the first electrode, wherein a surface area of the semiconductor layer is greater than a surface area of the first electrode; and a second electrode over the semiconductor layer.

Description

Solar cell and manufacture method thereof
Technical field
The present invention relates to solar cell, relate in particular to and have the improvement solar cell of efficiency of light absorption and the manufacture method of this solar cell.
Background technology
Be the exhaustion and the prevention environmental pollution of response fossil fuel, for example the clear energy sources of solar energy gets most of the attention; Especially, developed rapidly in order to the solar cell that solar energy converting is become electric energy.Solar cell can be divided into solar heat battery (solar thermal cell) and photovoltaic solar cell, and the solar heat battery utilizes the steam of solar thermal energy generation in order to rotary turbine, and photovoltaic solar cell then utilizes semiconductor to convert solar photon to electric energy.
Among these solar cells, develop the utilization just hole (hole) of the electronics of (P) N-type semiconductor N and negative (N) N-type semiconductor N and absorbing light and light is converted to the photovoltaic solar cell of electric energy widely.After this, claim that promptly photovoltaic solar cell is a solar cell.
Utilize semi-conductive solar cell to have the structure identical in fact with the PN junction diode.When on the part of rayed between P type semiconductor and N type semiconductor, electronics in semiconductor and hole are promptly derived because of luminous energy.Generally speaking, when being irradiated to the light time of energy less than the band-gap energy of semiconductor, electronics and hole have faint interactive effect; On the other hand, when being irradiated to the light time of energy less than the band-gap energy of semiconductor, the electronics in covalent bond is excited and is formed electron-hole pair as carrier.Have stable state by the carrier that light produced because of reorganization, be sent to respectively in N type semiconductor and the P type semiconductor because of internal electric field by electronics and the hole that light produced.Therefore, electronics and hole concentrate on respectively on the counter electrode and as electricity usage.
On the other hand, semi-conductive film be by chemical vapour deposition, spray pyrolysis method (spraypyrolysis method), zone melting again crystallisation, solid-phase crystallization method one of them form, zone melting crystallisation (zone melting re-crystallization method) and solid-phase crystallization method again has quite high efficient; Yet, because it needs high treatment temperature, so can't use glass substrate or metal material.These methods need have the substrate of high thermal stability, so make manufacturing cost increase.For satisfying the requirement on the manufacturing cost, amorphous silicon membrane or polycrystalline compounds film system are deposited by chemical vapour deposition or spray pyrolysis method.Yet, because these method efficient are not good, for example less than about 10%, so must study the manufacture method that has high efficiency and can be used for the solar cell on the glass substrate.
Fig. 1 is the cross-sectional view of prior art solar cell.With reference to Fig. 1, solar cell 10 comprises substrate 12 and is stacked in transparent conductive oxide electrode 14 on the substrate 12, p type semiconductor layer 16, intrinsic semiconductor layer 18, n type semiconductor layer 20, and metal electrode 22.
The prior art solar cell has even shape.Therefore, when producing electron-hole pair when passing through the light of substrate and transparent conductive oxide electrode as the intrinsic semiconductor absorption of active layer, should form thick intrinsic semiconductor, perhaps be necessary for the have laminated connected structure double cell (dual cell) of (for example serial structure), absorb light quantity to increase.
[summary of the invention]
As mentioned above, for increasing the light quantity that intrinsic semiconductor layer absorbed as active layer, several situations are arranged, for example solar cell has thicker intrinsic semiconductor layer; Yet it but causes the problem of manufacturing cost and manufacturing time increase.On the other hand, provide the solar cell that has as the intrinsic semiconductor layer of the double cell of laminated connected structure; Yet it causes the problem of manufacturing cost and manufacturing time increase, and the deterioration possibility also increases.
Therefore, embodiment of the present invention relate to elimination basically because the restriction of prior art and the solar cell and the manufacture method thereof of the one or more problems due to the shortcoming.
The purpose of embodiment of the present invention is to provide has intrinsic semiconductor layer absorbs recruitment as the solar cell of active layer and the manufacture method of this solar cell, described active layer light.
For reaching these and other advantage, and purpose according to embodiments of the present invention, as specializing and broad description, a kind of solar cell comprises: first electrode on substrate; A plurality of pillars on this first electrode; Semiconductor layer on this first electrode, wherein the surface area of this semiconductor layer is greater than the surface area of this first electrode; And second electrode above this semiconductor layer.
On the other hand, a kind of method of making solar cell comprises: form first electrode on substrate; On this first electrode, form a plurality of pillars; Form semiconductor layer on this first electrode, wherein the surface area of this semiconductor layer is greater than the surface area of this first electrode; Reach and above this semiconductor layer, form second electrode.
On the other hand, a kind of solar cell comprises: a plurality of pillars on substrate surface; Has lip-deep first electrode of the substrate of a plurality of pillars at this; Semiconductor layer on this first electrode, wherein the surface area of this semiconductor layer is greater than the surface area of this substrate; And second electrode above this semiconductor layer.
On the other hand, a kind of manufacture method of solar cell comprises: form a plurality of pillars on substrate surface; Have at this and to form first electrode on substrate surface of these a plurality of pillars; Form semiconductor layer on this first electrode, wherein the surface area of this semiconductor layer is greater than the surface area of this substrate; Reach and above this semiconductor layer, form second electrode.
Beneficial effect
In solar cell according to the present invention and manufacture method thereof, there are a plurality of pillars that form step poor (stepdifference).Because for example the semiconductor layer of intrinsic semiconductor layer is formed on these a plurality of pillars, so semiconductor layer is poor because of this step difference has a step.Therefore, the surface area of semiconductor layer is greater than the surface area of the layer (for example substrate below semiconductor layer) with uniform outer surface.Therefore, semiconductor can absorb the light of recruitment, and solar cell can provide the electromotive force of recruitment.
Description of drawings
The description of drawings that is comprised the present invention's embodiment, and the principle that is used to explain embodiment of the present invention together with specification, these accompanying drawings provide for embodiment of the present invention further to be understood, and is included in the specification and constitutes the part of this specification.In the accompanying drawings:
Fig. 1 is the cross-sectional view of prior art solar cell;
Fig. 2 is the cross-sectional view according to the solar cell of first embodiment of the invention;
Fig. 3 is the plane graph according to the solar cell of first embodiment of the invention;
Fig. 4 and 5 is the cross-sectional view of demonstration according to the manufacture process of the solar cell of first embodiment of the invention;
Fig. 6 is the plane graph according to the solar cell of second embodiment of the invention;
Fig. 7 is the cross-sectional view according to the solar cell of third embodiment of the invention;
Fig. 8 to 11 is the cross-sectional view of demonstration according to the manufacture process of the solar cell of third embodiment of the invention;
Figure 12 to 14 be respectively according to the present invention the 3rd, the 4th, and the solar cell of the 5th embodiment in the plane graph of pillar;
Figure 15 is for showing the schematic diagram according to sandblast process of the present invention;
Figure 16 and 17 is for showing the cross-sectional view that utilizes the solar cell manufacture process of paste (paste) according to the present invention.
Embodiment
Fig. 2 is the cross-sectional view according to the solar cell of first embodiment of the invention, Fig. 3 is the plane graph according to the solar cell of first embodiment of the invention, and Fig. 4 and 5 is for showing the manufacture process cross-sectional view according to the solar cell of first embodiment of the invention.
With reference to Fig. 2, solar cell 100 comprises substrate 112, first electrode 114, a plurality of pillar 130, first semiconductor layer 116, intrinsic semiconductor layer 118, second semiconductor layer 120, reflector 140, reaches second electrode 122.Substrate 112 can be formed and had an insulating property (properties) by clear glass.First electrode 114 can form and be arranged on the substrate 112 by transparent conductive oxide material (for example tin indium oxide (ITO) or indium zinc oxide (IZO)).A plurality of pillars 130 have cylindrical and are arranged on first electrode 114; First semiconductor layer 116 just has (P) type and is being formed on first electrode 114 and a plurality of pillar 130.That is to say that p type impurity is doped in first semiconductor layer 116.Intrinsic semiconductor layer 118 is used as active layer and is arranged on first semiconductor layer 116.That is to say that free from admixture is doped in the intrinsic semiconductor layer 118.Because pillar 130 is outstanding from first electrode 114, thus not only first semiconductor layer 116 but also intrinsic semiconductor layer 118 all to have a step poor.Intrinsic semiconductor layer 118 has recess and protuberance.Each of the corresponding pillar 130 of protuberance, and recess is arranged between the adjacent projection.That is to say that the substrate 112 and first electrode 114 have uniform outer surface, and intrinsic semiconductor layer 118 has uneven surface.Therefore, the surface area of intrinsic semiconductor layer 118 is greater than the surface area of the substrate 112 and first electrode 114.Because intrinsic semiconductor layer 118 has the surface area of increase, so the light quantity that is absorbed by intrinsic semiconductor layer 118 increases.Therefore, solar cell can provide the electromotive force of recruitment.Second semiconductor layer 120 has negative (N) type and is arranged on the intrinsic semiconductor layer 118.That is to say that N type doping impurity is gone in second semiconductor layer 120.Reflector 140 is arranged on second semiconductor layer 120, and is arranged on the reflector 140 by second electrode 122 that metal material forms.
First electrode 114 is formed on the first surface of substrate 112, light be incident in substrate 112 with the first surface opposing second surface on, and through being sent to first electrode 114.Light by substrate 112 passes through first electrode 114 and first semiconductor layer 116, and is incident on the intrinsic semiconductor layer 118.Form first electrode 114, contact with ohm (ohmic) of first semiconductor layer 116 with acquisition.To result from carrier in the intrinsic semiconductor layer 118 by light, and utilize first semiconductor layer 116 to be induced in first electrode 114.As mentioned above, first semiconductor layer 116 has the P type.As intrinsic semiconductor layer 118 absorbing light of active layer to produce carrier.That is, intrinsic semiconductor layer 118 is formed by intrinsic material, and the carrier that results from the intrinsic semiconductor layer 118 is induced in second electrode 120 by second semiconductor layer 122.As mentioned above, second electrode 120 has the N type; Reflector 140 reflections make light be incident in once more on the intrinsic semiconductor layer 118 by the light of substrate 112 incidents.The electric wire (not shown) is connected to second electrode 120 to obtain electromotive force.
With reference to Fig. 3, a plurality of columniform pillars 130 are arranged on first electrode 114 (among Fig. 2) of transparent conductive oxide material.According to the thickness separately of the different layers that is stacked in pillar 130 tops, the distance between the decision adjacent struts 130.Form pillar 130 with exposure meter area maximization with intrinsic semiconductor layer 118 (among Fig. 2).In the pillar 130 each all has shape of cross section different with Fig. 2 and different configurations.For example, with reference to demonstration Fig. 6 according to the plane graph of the solar cell of second embodiment of the invention, pillar 230 can have cross in the plane.In cross pillar 230, an end of one and the connecting line between another the tip of the axis have curved shape 232.Back with reference to Fig. 3, pillar 130 has the oval of main shaft 132 and countershaft 134, and pillar 130 is arranged to separate preset space length.Space between the adjacent struts 130 of pillar 130 in second row 138 in corresponding first row 136.That is to say that the pillar 130 in the pillar 130 in first row 136 and second row 138 is arranged alternately.
With reference to Fig. 4 and 5 manufacture methods that illustrate according to the solar cell of first embodiment of the invention.With reference to Fig. 4,, and first electrode 114 is formed on the substrate 112 by the deposit transparent electric conducting material.For example, transparent conductive material utilizes tin oxide (SnO 2) or zinc oxide (ZnO), deposited by chemical vapour deposition technique.Secondly, the Si oxide (SiO that will have transparent nature 2) layer (not shown) be formed on first electrode 114.Then, with the silicon oxide layer patterning, to form a plurality of pillars 130, pillar 130 can be formed by silicon nitride (SiNx) or photoresist with photoetching process, and both all have transparent nature silicon nitride (SiNx) and photoresist.Be the exposure meter area of maximization intrinsic semiconductor layer (not shown), pillar 130 is formed by the transparent material with high-transmittance.Moreover, pillar 130 is arranged to have compact formation.
With reference to Fig. 5, utilize plasma enhanced chemical vapor deposition (PECVD) method, by the deposition P type semiconductor material of p type impurity that wherein mixing, and first semiconductor layer 116 is formed on first electrode 114 that comprises pillar 130.First semiconductor layer 116 has step because of pillar 130.
Secondly, by the deposition intrinsic material of impurity not wherein, and intrinsic semiconductor layer 118 is formed on first semiconductor layer 116.Because first semiconductor layer 116 has step, intrinsic semiconductor layer 118 also has step.Therefore, the surface area of intrinsic semiconductor layer 118 increases.Then, by the deposition N type semiconductor material of N type impurity that wherein mixing, and second semiconductor layer 120 is formed on the intrinsic semiconductor layer 118.Then, by depositing for example reflecting material of zinc oxide (ZnO), reflector 140 is formed on second semiconductor layer 120.Second electrode is formed on the reflector 140, but and not shown.The second electrode system for example opaque metal material of aluminium (Al) forms.
By deformation method (texturing process) treatment substrate 112, first electrode 114, and reflector 140, with seizure (trapping) character that possesses light.By deformation method, the most of light that is incident on the substrate 112 is absorbed on the intrinsic semiconductor layer 118.That is to say that deformation method prevents that light stream from letting out in the solar cell outside.More specifically, the light by substrate 112 is hunted down between first electrode 114 and reflector 140, catches light and is absorbed on the intrinsic semiconductor layer 118.
Intrinsic semiconductor layer 118 absorbs via substrate 112 directly into being incident upon intrinsic semiconductor layer 118 and reflecting light on the reflector 140 of implementing deformation method.Because intrinsic semiconductor layer 118 has the surface area of increase because of pillar 130, so promoted the efficient that produces electron-hole pair.Intrinsic semiconductor layer 118 in the prior art solar cell, intrinsic semiconductor layer 118 in the present invention's the solar cell, the surface area that but has increase under the situation of same cross-sectional area and same thickness, therefore, solar cell has improvement efficient.
Fig. 7 is the cross-sectional view according to the solar cell of third embodiment of the invention, and Fig. 8 to 11 is the cross-sectional view of demonstration according to the manufacture process of the solar cell of third embodiment of the invention.
With reference to Fig. 7, solar cell 300 comprises substrate 312 with a plurality of pillars 360, first electrode 314, first semiconductor layer 316, intrinsic semiconductor layer 318, second semiconductor layer 320, reflector 340, and second electrode 322.A plurality of pillars 360 form with the first surface that protrudes in substrate 312 by the part of etching substrates 312 because pillar 360 is outstanding from substrate 312, so not only first electrode 314 and first semiconductor layer 316, and intrinsic semiconductor layer 318 also to have a step poor.Intrinsic semiconductor layer 318 has recess and protuberance, each of the corresponding pillar 360 of protuberance, and recess is arranged between the adjacent projection.That is to say that substrate 312 has uniform outer surface, and intrinsic semiconductor layer 318 has uneven surface.Therefore, the surface area of intrinsic semiconductor layer 318 is greater than the surface area of substrate 312.
Substrate 312 can be formed and had an insulating property (properties) by clear glass; First electrode 314 can form and be arranged on the substrate 312 by transparent conductive oxide material (for example tin indium oxide (ITO) or indium zinc oxide (IZO)).First semiconductor layer 316 just has (P) type and is being formed on first electrode 314.Intrinsic semiconductor layer 318 is arranged on first semiconductor layer 316 as active layer.Second semiconductor layer 320 has negative (N) type and is arranged on the intrinsic semiconductor layer 318.Reflector 340 is arranged on the intrinsic semiconductor layer 318, and is arranged on the reflector 340 by second electrode 322 that metal material forms.Because a plurality of pillars 360 form by the part of etching substrates 312, so manufacture process is simplified compared to first embodiment is existing.Because intrinsic semiconductor layer 118 has step because of pillar 360, so intrinsic semiconductor layer 118 has the surface area of increase.
With reference to the manufacture method of Fig. 8 to 11 explanation according to the solar cell of the 3rd embodiment.With reference to Fig. 8, photosensitive material layer 313 is formed on the first surface of substrate 312; Then, with reference to Fig. 9, a plurality of photosensitive material patterns 315 are formed on the first surface of substrate 312, each photosensitive material patterns 315 all has island shape.
With reference to Figure 10, form a plurality of pillars 360 by the sandblast processing procedure, utilize a plurality of photosensitive material patterns 315 (among Fig. 9) as the patterning shielding and with substrate 312 patternings; Pillar 360 corresponding photosensitive material patterns 315 (among Fig. 9).With reference to Figure 12 to 14, it shows the various difformities of pillar with plane graph.The plane graph of pillar 360 have oval 360b among circular 360a, Figure 13 among Figure 12, and Figure 14 in cross 360c.Yet, pillar 360 can be arranged to other shape.For example, as shown in Figure 3, the space between the two adjacent pillars in corresponding first solid line in the position of the pillar in second solid line.
With reference to the Figure 15 that shows the sandblast process, the sanding machine 362 that will have nozzle 362a is arranged at the substrate top that comprises photosensitive material patterns 315.Through nozzle 362a and with aluminium oxide (Al 2O 3) polishing particles 364 be sprayed on the substrate 312.Utilize polishing particles 364 and the part that substrate is exposed to photosensitive material patterns 315 is carried out etching, so that each that can be in photosensitive material patterns 315 forms each pillar 360 down.That is to say, utilize photosensitive material patterns 315 substrate 312 to be carried out etching as etch shield.Can replace photosensitive material patterns 315 and stacking on substrate 312 by dry film photoresist (DFR), the utilization shielding is with DFR exposure and development, and to form a plurality of DFR patterns, the effect of DFR pattern is the etch shield as substrate 312.
Then,, and first electrode 314 is formed on the substrate 312 with pillar 360 by the deposit transparent electric conducting material with reference to Figure 11.For example, transparent conductive material is by utilizing tin oxide (SnO 2) or the chemical vapor deposition (CVD) method of zinc oxide (ZnO) deposited.Utilize plasma enhanced chemical vapor deposition (PECVD) method,, and first semiconductor layer 316 is formed on first electrode 314 by the deposition P type semiconductor material of p type impurity that wherein mixing.First semiconductor layer 316 has step because of pillar 360.Secondly, by depositing the not intrinsic semiconductor layer 318 of impurity, intrinsic semiconductor layer 318 is formed on first semiconductor layer 316.Because first semiconductor layer 316 has step, intrinsic semiconductor layer 318 also has step.Therefore, the surface area of intrinsic semiconductor layer 318 increases.Then, the N type semiconductor material of N type impurity, second semiconductor layer 320 is formed on the intrinsic semiconductor layer 318 by dopant deposition.Then, by depositing for example reflecting material of zinc oxide (ZnO), reflector 340 is formed on second semiconductor layer 320.Though not shown, second electrode 322 (among Fig. 7) is formed on the reflector 340.Second electrode 322 (among Fig. 7) is formed by the opaque metal material of for example aluminium (Al).
Figure 16 and 17 is for showing according to the cross-sectional view that utilizes the solar cell manufacture process of paste (paste) of the present invention.With reference to Figure 16,, the paste pattern 470 of gel state is formed on the substrate 412 by silk screen print method.Paste pattern 470 has a plurality of openings.Secondly, with reference to Figure 17, the material of paste pattern 470 and glass substrate 412 produce reaction and form reacting part 472.That is to say that the part of paste pattern 470 belows is by the upgrading in addition that reacts of the material with paste pattern 470, so that make the reacting part 472 of substrate 412 be positioned at paste pattern 470 belows.Reacting part 472 has the character different with the other parts of substrate 412.Remove reacting part 472 and paste pattern 470 forming a plurality of pillars, but not shown.Owing to removed the reacting part 472 of paste pattern 470 belows, all corresponding each opening of each in a plurality of pillars.In addition, first electrode, first semiconductor layer, intrinsic semiconductor layer, second semiconductor layer, reflector, and second electrode all be stacked on the substrate 412 with pillar.
Those skilled in the art should understand: under situation without departing from the spirit or scope of the invention, can carry out various modifications and variation in the equipment with frame scope.Therefore, this invention is intended to comprise various modifications and variation and the equivalent thereof that falls in the claim scope of enclosing.
Industrial applicibility
In the present invention, because the semiconductor layer of solar cell has the surface area of increase, so solar cell has the performance of improvement. This solar cell can be used as the energy in situation about not causing such as problems such as environmental pollutions.

Claims (29)

1. solar cell, it comprises:
First electrode on substrate;
A plurality of pillars on first electrode;
Semiconductor layer on first electrode, wherein the surface area of this semiconductor layer is greater than the surface area of this first electrode; And
Second electrode above semiconductor layer.
2. the solar cell of claim 1, wherein said semiconductor layer comprises second semiconductor layer, and the 3rd semiconductor layer of the semi-conducting material of doping minus impurity of first semiconductor layer, the intrinsic material of the semi-conducting material of doping eurymeric impurity, and wherein first semiconductor layer is faced described a plurality of pillars, and second semiconductor layer is between the first and the 3rd semiconductor layer.
3. the solar cell of claim 2, wherein said substrate is formed by glass, and first electrode is formed by one of tin oxide and zinc oxide, and second electrode is formed by the opaque metal material.
4. the solar cell of claim 2, it also comprises the reflector that is arranged between the 3rd semiconductor layer and second electrode.
5. the solar cell of claim 4, wherein said reflector is formed by zinc oxide.
6. the solar cell of claim 1, each in wherein said a plurality of pillars all have circle, oval, and one of cross.
7. the solar cell of claim 1, in wherein said a plurality of pillar each all has the cross that comprises first and second, and also comprise an end of first of connection cross and the connecting line of criss-cross second the tip of the axis, this connecting line has curved shape.
8. the solar cell of claim 1 wherein is arranged to described a plurality of pillars first row and second row, and the pillar in the pillar in first row and second row is arranged alternately.
9. the solar cell of claim 1, wherein said a plurality of pillars are formed by one of Si oxide, silicon nitride and transparent light-sensitive material.
10. method of making solar cell, it comprises:
On substrate, form first electrode;
On first electrode, form a plurality of pillars;
Form semiconductor layer on first electrode, wherein the surface area of this semiconductor layer is greater than the surface area of this first electrode; And
Above this semiconductor layer, form second electrode.
11. the method for claim 10, the step that wherein forms this semiconductor layer comprises:
Form first semiconductor layer of the semi-conducting material of doping eurymeric impurity, it is in the face of described a plurality of pillars;
On first semiconductor layer, form second semiconductor layer of intrinsic material; And
On second semiconductor layer, form the 3rd semiconductor layer of the semi-conducting material of doping minus impurity.
12. the method for claim 11, it also is included between the 3rd semiconductor layer and second electrode and forms the reflector.
13. a solar cell, it comprises:
A plurality of pillars on substrate surface;
At described lip-deep first electrode with substrate of a plurality of pillars;
Semiconductor layer on first electrode, wherein the surface area of this semiconductor layer is greater than the surface area of substrate; And
Be positioned at second electrode of this semiconductor layer top.
14. the solar cell of claim 13, wherein said semiconductor layer comprises second semiconductor layer, and the 3rd semiconductor layer of the semi-conducting material of doping minus impurity of first semiconductor layer, the intrinsic material of the semi-conducting material of doping eurymeric impurity, and first semiconductor layer is in the face of first electrode, and second semiconductor layer is between the first and the 3rd semiconductor layer.
15. the solar cell of claim 14, wherein said substrate is formed by glass, and first electrode is formed by one of tin oxide and zinc oxide, and second electrode is formed by the opaque metal material.
16. the solar cell of claim 14, it also comprises the reflector that is arranged between the 3rd semiconductor layer and second electrode.
17. the solar cell of claim 16, wherein said reflector is formed by zinc oxide.
18. the solar cell of claim 13, each in wherein said a plurality of pillars all have circle, oval, reach one of cross.
19. the solar cell of claim 13, in wherein said a plurality of pillar each all has the cross that comprises first and second, and also comprise the connecting line that connects this criss-cross first end and this criss-cross second the tip of the axis, this connecting line has curved shape.
20. the solar cell of claim 13, wherein said a plurality of pillars are by forming with the substrate identical materials.
21. the solar cell of claim 13 wherein should a plurality of pillars be arranged to first row and second row, and wherein the pillar in this first row is arranged alternately with pillar in this second row.
22. a method of making solar cell, it comprises:
On the surface of substrate, form a plurality of pillars;
On the surface of described substrate with a plurality of pillars, form first electrode;
Form semiconductor layer on first electrode, wherein the surface area of this semiconductor layer is greater than the surface area of substrate; And
Above this semiconductor layer, form second electrode.
23. the method for claim 22, the step that wherein forms a plurality of pillars comprises the part on the surface of etching substrates, so that each that makes described a plurality of pillars part between the adjacent etched part on the surface of counterpart substrate all.
24. the method for claim 23, wherein the step of the part on the surface of etching substrates comprises:
On the surface of substrate, form a plurality of etch shield patterns, each in all corresponding described a plurality of pillars of each in these a plurality of etch shield patterns; And
Utilize described a plurality of etch shield pattern as etch shield, the part on the surface of etching substrates.
25. the method for claim 24, wherein said a plurality of etch shield patterns are formed by light-sensitive material.
26. the method for claim 24, wherein the step of the part on the surface of etching substrates is implemented by sand-blast.
27. the method for claim 23, wherein the step of the part on the surface of etching substrates comprises:
Formation has the paste pattern of a plurality of openings, wherein the material of the material of this paste pattern and this substrate reacts, forming reacting part in this substrate below this paste pattern, and wherein each in these a plurality of pillars all in should a plurality of openings each; And
Remove reacting part and paste pattern.
28. the method for claim 22, the step that wherein forms semiconductor layer comprises first semiconductor layer of the semi-conducting material that forms doping eurymeric impurity, and it is in the face of a plurality of pillars; On first semiconductor layer, form second semiconductor layer of intrinsic material; Reach the 3rd semiconductor layer of the semi-conducting material that on this second semiconductor layer, forms doping minus impurity.
29. the method for claim 28, it also is included between the 3rd semiconductor layer and second electrode and forms the reflector.
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