CN101628477B - 借助“像素偏移”生成分辨率提高的三维对象的方法 - Google Patents

借助“像素偏移”生成分辨率提高的三维对象的方法 Download PDF

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CN101628477B
CN101628477B CN2009101505318A CN200910150531A CN101628477B CN 101628477 B CN101628477 B CN 101628477B CN 2009101505318 A CN2009101505318 A CN 2009101505318A CN 200910150531 A CN200910150531 A CN 200910150531A CN 101628477 B CN101628477 B CN 101628477B
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亚历山大·什科林尼克
亨德里克·约翰
阿里·埃尔-斯博兰尼
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    • B33Y50/00—Data acquisition or data processing for additive manufacturing

Abstract

本发明涉及一种用于借助掩模曝光通过逐层固化可在电磁辐射作用下固化的材料来制造三维对象的方法和装置，其中掩模由具有固定分辨率的成像单元产生，掩模由恒定数量的离散的且在空间上相互固定设置的成像元素(像素)形成。为了改善在亚像素范围中沿着要逐层产生的对象的横截面的外轮廓和内轮廓的分辨率，对每一层进行多次曝光，该多次曝光由图像面/构造面中在亚像素范围内相互偏移的多个图像序列组成，其中对每个偏移的图像生成单独的掩模/位图。

Description

借助“像素偏移”生成分辨率提高的三维对象的方法
本申请是申请日为2005年5月9日、申请号为200580014918.0(PCT/EP2005/005003)、发明名称为“借助“像素偏移”生成分辨率提高的三维对象的方法”的专利申请的分案申请。
技术领域
本发明涉及借助具有恒定分辨率的光栅化成像单元通过用掩模曝光来逐层固化(Verfestigung)光电硬化(photohaertend)材料以制造三维对象的方法和装置，其中图像面/构造面中的分辨率应当在亚像素范围中得到改善。
背景技术
为了逐层构造由“光硬化(lichthaertend)”材料构成的三维对象，在文献中给出了极为不同的方法，为此参见Marshall Burns的“Automated Fabrication-Improving Productivity in Manufacturing”，1993(ISBN 0-13-119462-3)。
该发明涉及这样的方法，在该方法中，要制造的层基于借助于光栅化掩模的曝光，其中掩模中的最小物理分辨率通过像素的尺寸来给定。
目前公知的途径可以是通过下列装置进行的曝光：
a)投影单元(基于
Figure GSB00000925093200011
LCD，
Figure GSB00000925093200012
等等)
b)LC显示器(反射的，透射的)
c)LED或激光二极管行/阵列(其在层上的XY平面内移动)
d)基于MEM技术(光阀)的行或阵列(其在层上的XY平面内移动)
其中一些方法被描述在以下专利中：
Dicon AS(DK)的IPC：B29C67/00“Rapid Prototyping apparatusand method of Rapid Prototyping”(申请)；
Texas Instruments Inc.的美国专利US005247180A“Stereolithographic Apparatus and Method of use”，1993年9月；
SRI International的美国专利US005980813A“RapidPrototyping using multiple materials”，1999年11月；
Forschungszentrum Informatik an derKarlsruhe的实用新型DE G 9319405.6“Vorrichtung zur Herstellung einesdreidimensionalen Objects(Modells)nach dem Prinzip derPhotoverfestigung”，1993年12月；
在DeltaMed等人的实用新型DE 29911122U1“Vorrichtungzum Herstellen eines dreidimensionalen Objektes”，1999年7月中描述了对根据类似方法产生显微技术三维组件的应用。
Envision Technologies GmbH的PCT专利申请02008019.8“Vorrichtung zum Herstellen eines dreidimensionalen Objektes”，2002年4月。
在US 6,180,050中描述了一种用于在制造三维组件时逐层固化的线性扫描技术。通过在X方向上扫描具有在Y方向上相互交错的光纤阵列的曝光头，提高分辨率。
在上述所有方法中，待硬化的材料层的分辨率直接取决于成像方法的分辨率。
此外，在投影方法中，中间连接的光学系统确定投影层或待硬化层的比例。
因此，图像面/构造面中每个面积单位的分辨率取决于a)成像单元的分辨率或最小元素、即所谓的像素及其相互之间的相对距离、即所谓的像素间距以及b)投影比例。
因此，通过体素(体积像素)的最小体积单元来确定组件的表面粗糙度，其中体素的尺寸由投影在XY平面上的像素面积和Z方向上的层厚组成。
由执行器在Z方向上的最小分辨率(步长大小)来预先给定层厚的分辨率，以便移动载体平台。这里，分辨率已经可以达到直至一位数μm的范围。如果要实现组件的低表面粗糙度，必须减小投影场并因此随之减小像素面积。
在此，给出借助于多媒体投影器的投影作为例子；对于XGA(1024×768像点)的分辨率、17μm的像素和17.9μm的像素间距，在以投影光学系统的放大倍数15投影到275mm×206mm上的时候，图像面/构造面中的分辨率达到大约100dpi，并且因此待硬化层的分辨率也达到大约100dpi，这相当于在大约0.254mm×0.254mm的投影面中的像素尺寸。
为了在构造平面相同的情况下例如将图像面/构造面中的分辨率翻倍，在这些投影方法中建议，将投影/放大倍数减半(这意味着将平面分为四份)，并且为了曝光4个子平面，将整个投影单元或构造空间相互平行地移动。
该方法的显著缺点是，较大的物体必须非常准确地相对移动，以保证子平面的准确邻接和密切连接，这对于为此所需的机械装置来说意味着很高的成本而且需要整个装置中的额外空间。
对于通过借助于LED或激光二极管行/阵列的扫描来选择性地直接曝光或者通过由透射性LCD构成的掩模来直接曝光，构造面中的分辨率等于成像单元中的分辨率。
发明内容
本发明所要解决的技术问题是提供一种方法和一种系统，其使得可以在构造平面保持相同大小的情况下将构造面中的分辨率在亚像素范围内提高多倍，即改善对象截面中外轮廓和内轮廓的光栅化，而
a)不必在相邻子平面内进行曝光，
b)不提高光栅化的成像单元本身的分辨率。
该技术问题通过具有以下特征的用于生成位图数据的方法解决：所述位图数据用于引导借助于掩模曝光的电磁辐射的投影，所述方法包括：用矢量线来表示对象横截面的外轮廓和内轮廓；通过以下方式为XY平面中的亚像素偏移生成位图：以XY平面中亚像素范围中的相应偏移来变换矢量线的XY坐标，将偏移后的矢量线设置在位图光栅上，并且为XY平面中的偏移计算有效像素的新分布。
通过根据本发明的方法或根据本发明的装置，借助于“像素偏移”在亚像素范围中改善图像面/构造面中的分辨率。本发明尤其涉及用于借助于掩模投影通过材料固化(特别是通过光化聚合)制造三维组件或三维体的逐层固化，而不涉及借助于(线性)扫描技术的传统逐层固化。按照本发明，这可以通过将两维设置的阵列用作成像元件而被非常有效和有利地实现，其中例如通过固定的显微镜阵列预先固定给出光栅化和/或分辨率。
与在Canon被称为VAROS(可变折射光学系统)和在Epson被称为“双CCD”的扫描技术相比，在本发明中，读取和叠加在亚像素范围中相互偏移的图像的原理被用于在快速原型制造(RapidPrototyping)中的光栅化成像方法。
为了改善构造面中的分辨率，不必提高光栅化成像单元本身的分辨率或像点数量。
为了提高分辨率，不是在相邻设置的相应缩小的子平面中进行曝光，由此整个平面的构造/曝光时间增加子平面的数量那么多，而是在整个构造平面上进行投影/曝光。
通过将在亚像素范围中相互偏移的图像叠加，整个平面的构造/曝光时间增加得不明显。
构造面中分辨率改善的程度可以自由选择。
附图说明
下面借助附图示例性地而非限制性地详细解释本发明。
图1示意性示出借助于掩模投影8通过逐层硬化光电硬化材料4来生成三维对象3的基本装置，其中具有成像光学系统2的投影单元1位于被填充以光电硬化材料4的贮槽6上方，并且对象3逐层地在载体平台5上硬化，该载体平台5可以在贮槽6内沿竖直方向运动。在借助于掩模曝光的基于光电硬化的方法中，将硬化所需的辐射投影到图像面/构造面7中。借助于光栅化的成像单元进行曝光，其中该成像单元被构造为矩阵。其中，图像由各个像点(像素)组成，并因此形成光栅化的掩模(位图)，其中像素在该面中空间地相互固定地排列。
图2-7示出了为了达到图像在构造面中的各亚像素偏移的不同实施方式。
图8-12以简单的例子示出在起始位置(图8)和在位图的在亚像素范围中偏移(移位)的不同状态(图9-11)下生成三维对象横截面的掩模(产生位图)的原理，以及所有位图的叠加(图12)。
横截面、即外轮廓和内轮廓由矢量线(Vektorzug)11描述，其中矢量线被光栅化平面(位图)12叠加，光栅化平面的分辨率精确等于通过成像矩阵所产生的投影图像8中离散元素(像素)的分辨率。其中，矢量线11和位图12位于上级XY坐标系10中。图8示出在其起始位置中的位图。通过特定算法，计算在起始位置的位图12中描述横截面的有效像素13。
图9中，位图14相对于横截面在亚像素范围中偏移ΔX，由此得到有效像素15的新分布。
图10示出位图16相对于横截面偏移ΔY，具有有效像素17。
图11示出位图18相对于横截面对角偏移ΔX和ΔY，具有有效像素19。
在图12中，叠加地示出具有有效像素13、15、17、19的所有位图12、14、16、18，其中可以清楚地看出横截面的(外)轮廓区域中的分辨率改善。
通过只将起始位置的位图12(图8)和对角偏移的位图18(图11)叠加，可以实现改善分辨率的简化方法。在这种情况下，位图或图像必须只在沿像素对角线的方向上偏移。
根据期望的分辨率改善，可以为每个对象层生成具有不同亚像素偏移的多倍(至少两倍)掩模或位图并将其叠加。
具体实施方式
通过每个对象层/材料层的不同偏移和叠加的曝光(在此借助于位图12、14、16、18)，在外轮廓和内轮廓区域中实现XY平面中的分辨率改善。为了达到图像在构造面中的各亚像素偏移，下面描述不同的实施方式：
1)在图2中，对每个偏移的位图，这样倾斜成像单元1，使得达到图像面/构造面中图像在亚像素范围中的期望偏移。
2)在图3中，对每个偏移的位图，通过执行器将成像单元1在X和Y上、即与图像面/构造面平行地偏移相应的亚像素范围。
3)在图4中，成像投影单元固定在其位置上。对每个偏移的位图，这样倾斜成像光学系统2，使得实现图像面/构造面中图像在亚像素范围中的期望偏移。
4)在图5中，成像投影单元固定在其位置上。对每个偏移的位图，这样在XY平面中偏移成像光学系统2，使得达到图像面/构造面中图像在亚像素范围中的期望偏移。
5)为了将光学误差(角误差、失真)保持得很小，利用图像侧的远心辐射路径、图像侧的近似远心辐射路径和具有长焦距的远摄镜头进行成像的特殊情况：
a)在图5中，对每个偏移的位图，通过执行器这样倾斜投影单元1，使得投影图像8在图像面/构造面7中在相应亚像素范围内在X和Y方向上偏移。
b)在图6中，在投影单元1和图像面/构造面7之间设置万向安装的透明的、面平行的板9(玻璃板)，其中该板9通过围绕面平行于图像面/构造面的两个轴(XY)旋转而使投影辐射路径8、并因此使图像面/构造面7中的图像在亚像素范围中在X和Y方向上偏移。
c)在图7中，投影单元1固定在其位置上。投影射线8通过镜10被偏转到图像面/构造面7中。偏转镜10具有调节可能(万向支撑)，通过该调节可能可以针对每个偏移的位图这样偏转投影射线，使得在图像面/构造面7中达到图像在亚像素范围中的偏移。
上述实施方式1)至5)以及a)至c)可以单独发挥作用或组合在一起。
每一层的掩模投影所需位图从层数据中产生，其中在层数据中，各对象横截面的外轮廓和内轮廓用矢量线来表示(诸如例如以数据格式CLI限定)。
为此，使用将矢量图转换为位图格式(位图化)的特定SW。
对于XY平面中的每个亚像素偏移，生成一个独立的位图，其方法是：以XY平面中(亚像素范围中)的相应偏移变换层数据的(用于外轮廓和内轮廓的)矢量的XY坐标，并设置在位图光栅上，并因此对每个偏移计算有效像素的新分布。
每个像素的投影的光功率可以通过投影掩模内的“灰度级”改变，以便选择性地影响层中的硬化程度。为了提高轮廓像素的光功率，这特别有意义，因为这里由于各位图的亚像素偏移而只得到各轮廓像素的部分重叠(在轮廓内的平面中，保证各位图的像素完全重叠)。
在投影/叠加偏移了亚像素的层图像时，可以通过特别是沿着投影平面结构的轮廓叠加灰度级，获得光功率或曝光强度在灰度级掩模总和上近似均匀的分布。

Claims (5)

1.一种用于生成位图数据的方法，所述位图数据用于引导借助于掩模曝光的电磁辐射的投影，所述方法包括：
用矢量线来表示对象横截面的外轮廓和内轮廓；
通过以下方式为XY平面中的亚像素偏移生成位图：
以XY平面中亚像素范围中的相应偏移来变换矢量线的XY坐标，
将偏移后的矢量线设置在位图光栅上，并且
为XY平面中的偏移计算有效像素的新分布。
2.根据权利要求1所述的方法，其中XY平面中的亚像素偏移是相对于表示内轮廓和外轮廓的矢量线的偏移量ΔX。
3.根据权利要求1所述的方法，其中XY平面中的亚像素偏移是相对于表示内轮廓和外轮廓的矢量线的偏移量ΔY。
4.根据权利要求1所述的方法，其中XY平面中的亚像素偏移是相对于表示内轮廓和外轮廓的矢量线的偏移量ΔX和偏移量ΔY。
5.根据权利要求1所述的方法，还包括通过投影掩模内的灰度级改变每个像素的投影的光功率。
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US7790093B2 (en) 2010-09-07
US8862260B2 (en) 2014-10-14
US20050248062A1 (en) 2005-11-10
US7962238B2 (en) 2011-06-14
DE102004022961B4 (de) 2008-11-20
US20110009992A1 (en) 2011-01-13
US20110196529A1 (en) 2011-08-11
EP2266781A1 (de) 2010-12-29
CN1950191B (zh) 2010-07-28
CN1950191A (zh) 2007-04-18
DE102004022961A1 (de) 2005-12-15
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