CN101614899B - Reflection type liquid crystal display apparatus and liquid crystal projector system - Google Patents
Reflection type liquid crystal display apparatus and liquid crystal projector system Download PDFInfo
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- CN101614899B CN101614899B CN2009101604934A CN200910160493A CN101614899B CN 101614899 B CN101614899 B CN 101614899B CN 2009101604934 A CN2009101604934 A CN 2009101604934A CN 200910160493 A CN200910160493 A CN 200910160493A CN 101614899 B CN101614899 B CN 101614899B
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Abstract
The invention discloses a reflection type liquid crystal display apparatus and a liquid crystal projector system. The reflection type liquid crystal display apparatus comprises: a light transmitting substrate having a light transmitting electrode; and a first conduction type semiconductor substrate being arranged in opposition to the light transmitting substrate sandwiching a liquid crystal between the light transmitting substrate and the first conduction type semiconductor substrate, and having a plurality of pixel electrodes arranged in a matrix; wherein, the first conduction type semiconductor substrate has a first semiconductor region which acts as a main electrode region of a switch element electrically connected to the pixel electrodes and which has a second conduction type being opposite to the first conduction type, and a second semiconductor region which is provided at least a part of the periphery of the first semiconductor region and has the first conduction type.
Description
The application be that April 18, application number in 2007 are 200710100804.9 the applying date, denomination of invention divides an application for the patented claim of " reflective liquid crystal display device and crystal projection instrument system ".
Technical field
The present invention relates to a kind of reflective liquid crystal display device and crystal projection instrument system.
Background technology
Existing nowadays multimedia era begins, and more and more important through the equipment that uses communication of image information.Wherein, because thin and power consumption is little, the liquid display device receives publicity, and compares with inventionthe semiconductor industry and to grow into major industry.
Now, for liquid crystal display, along with screen size becomes bigger, not only the price of manufacturing equipment becomes higher, but also needs strict electrical characteristics to drive giant-screen.Therefore, having small size LCD panel and image is paid close attention to by the projecting liquid crystal displaying equipment of optics expansion and demonstration.This is because similar with the proportional zoom rule, when semi-conductive size becomes more hour, semi-conductive performance and price improve, and through making the littler characteristic that not only can improve liquid crystal display of size, but also can reduce the cost of liquid crystal display.But, because through with rayed on undersized LCD panel and image is amplified, so can not ignore the influence of light to semiconductor circuit.Therefore, for example,, in 067, disclose a kind of liquid crystal display, wherein,, prevented that light from inciding in the semiconductor circuit through using light shield layer such as the stack membrane of Ti and TiN at United States Patent(USP) No. 5,706.
Yet, in projecting liquid crystal displaying equipment, need brighter demonstration, use stronger rayed liquid crystal display thus.Therefore, only use light shield layer to be difficult to prevent fully that light from getting into semiconductor circuit, but a part of light get into semiconductor circuit, in semiconductor circuit, produces photocarrier thus.In case the photocarrier that produces arrives the on-off element of semiconductor circuit, just might cause adverse effect to the operation of on-off element, thus, can not carry out normal display operation.It is this because the adverse effect about on-off element that photocarrier produces is called " light leak ".
Therefore, in the open No.H08-146458 of Japanese patent application, disclose around the drain region n is provided semiconductor regions, its type is identical with the drain region type of the on-off element that offers p type silicon substrate, and its area is bigger than the area of drain region.In addition, the current potential of p type silicon substrate is fixed on earth potential, applies positive bias to the n type semiconductor region through using ground electrode.The positive hole of the photocarrier that in p type silicon substrate, produces by this method, and electronics are absorbed by ground electrode and n type semiconductor region respectively.Therefore, with respect to the operation of on-off element, can reduce adverse effect owing to the photocarrier that produces by the light that arrives p type silicon substrate.
Summary of the invention
But, in order to pursue brightness, need stronger light intensity, and light and handy in order to pursue cost cutting and structure, need littler board size, thus, the unit optical density increases more and morely.Therefore, needed a kind of liquid crystal board that has stronger repellence with respect to light.Through the n N-type semiconductor N that type is identical and area is bigger than the area of drain region with the drain region only is provided; As disclosed in the open No.H08-146458 of Japanese patent application; When stronger light gets into, can not fully reduce because photocarrier and to the adverse effect of the operation generation of on-off element.
The objective of the invention is to obtain a kind of reflective liquid crystal display device with high reliability; Even when high light gets into; Its operation can not demoted yet, and through using this reflective liquid crystal display device that a kind of liquid crystal projection apparatus that volume is light and handy and price is low with high brightness and high reliability is provided.
Designed reflective liquid crystal display device of the present invention for solving the above problems, it comprises: the light-transmissive substrates with euphotic electrode; And the first conductive-type semiconductor substrate, be arranged as relatively with said light-transmissive substrates, between the said light-transmissive substrates and the first conductive-type semiconductor substrate, clip liquid crystal, the said first conductive-type semiconductor substrate has a plurality of pixel electrodes of arranging with matrix-style.Wherein, said Semiconductor substrate has pixel, and said pixel comprises: first semiconductor region, and it is used as the main electrode area of the on-off element that is electrically connected to said pixel electrode, and has second conductivity type opposite with first conductivity type; With second semiconductor region with second conductivity type; And when the unit charge of the second conductivity type majority carrier in first and second semiconductor regions was defined as Q, the voltage of second semiconductor region and the product of Q were littler than the product of the voltage of first semiconductor region and Q.
In addition, reflective liquid crystal display device of the present invention comprises: the light-transmissive substrates with euphotic electrode; And the first conductive-type semiconductor substrate, be arranged as relatively with said light-transmissive substrates, between the said light-transmissive substrates and the first conductive-type semiconductor substrate, clip liquid crystal, arranged a plurality of pixel electrodes with matrix-style in the said first conductive-type semiconductor substrate.Wherein, said Semiconductor substrate has pixel, and said pixel comprises: first semiconductor region, and it is used as the main electrode area of the on-off element that is electrically connected to said pixel electrode, and has second conductivity type opposite with first conductivity type; With second semiconductor region with second conductivity type, and when the second conductivity type majority carrier was electronics, the reference value of the voltage of voltage ratio first semiconductor region of second semiconductor region was high.
In addition, reflective liquid crystal display device of the present invention comprises: the light-transmissive substrates with euphotic electrode; And the first conductive-type semiconductor substrate, be arranged as relatively with said light-transmissive substrates, between the said light-transmissive substrates and the first conductive-type semiconductor substrate, clip liquid crystal, the said first conductive-type semiconductor substrate has a plurality of pixel electrodes of arranging with matrix-style.Wherein, said Semiconductor substrate has pixel, and said pixel comprises: first semiconductor region, and it is used as the main electrode area of the on-off element that is electrically connected to said pixel electrode, and has second conductivity type opposite with first conductivity type; With second semiconductor region with second conductivity type, and when the second conductivity type majority carrier was the hole, the reference value of the voltage of voltage ratio first semiconductor region of second semiconductor region was low.
Reflective liquid crystal display device of the present invention comprises: the light-transmissive substrates with euphotic electrode; And the second conductive-type semiconductor substrate; Be arranged as relative with said light-transmissive substrates; Between the said light-transmissive substrates and the second conductive-type semiconductor substrate, clip liquid crystal, the said second conductive-type semiconductor substrate has first conductive type well, has wherein arranged a plurality of pixel electrodes with matrix-style.Wherein, said Semiconductor substrate has pixel in said trap, and said pixel comprises: first semiconductor region, and it is used as the main electrode area of the on-off element that is electrically connected to said pixel electrode, and has second conductivity type opposite with first conductivity type; With second semiconductor region with second conductivity type; And when the unit charge of the second conductivity type majority carrier in first and second semiconductor regions was defined as Q, the voltage of second semiconductor region and the product of Q were littler than the product of the voltage of first semiconductor region and Q.
In addition, reflective liquid crystal display device of the present invention comprises: the light-transmissive substrates with euphotic electrode; And the second conductive-type semiconductor substrate; Be arranged as relative with said light-transmissive substrates; Between the said light-transmissive substrates and the second conductive-type semiconductor substrate, clip liquid crystal, the said second conductive-type semiconductor substrate has first conductive type well, has wherein arranged a plurality of pixel electrodes with matrix-style.Wherein, said Semiconductor substrate has pixel in said trap, and said pixel comprises: first semiconductor region, and it is used as the main electrode area of the on-off element that is electrically connected to said pixel electrode, and has second conductivity type opposite with first conductivity type; With second semiconductor region with second conductivity type, and when the second conductivity type majority carrier was electronics, the reference value of the voltage of voltage ratio first semiconductor region of second semiconductor region was high.
In addition, reflective liquid crystal display device of the present invention comprises: the light-transmissive substrates with euphotic electrode; And the second conductive-type semiconductor substrate; Be arranged as relative with said light-transmissive substrates; Between the said light-transmissive substrates and the second conductive-type semiconductor substrate, clip liquid crystal, the said second conductive-type semiconductor substrate has first conductive type well, has wherein arranged a plurality of pixel electrodes with matrix-style.Wherein, said Semiconductor substrate has pixel in said trap, and said pixel comprises: first semiconductor region, and it is used as the main electrode area of the on-off element that is electrically connected to said pixel electrode, and has second conductivity type opposite with first conductivity type; With second semiconductor region with second conductivity type, and when a plurality of charge carriers of second conductivity type were the hole, the reference value of the voltage of voltage ratio first semiconductor region of second semiconductor region was low.
In addition, reflective liquid crystal display device of the present invention comprises: the light-transmissive substrates with euphotic electrode; And the first conductive-type semiconductor substrate, be arranged as relatively with said light-transmissive substrates, between the said light-transmissive substrates and the first conductive-type semiconductor substrate, clip liquid crystal, the said first conductive-type semiconductor substrate has a plurality of pixel electrodes of arranging with matrix-style.Wherein, said Semiconductor substrate comprises: first semiconductor region, and it is used as the main electrode area of the on-off element that is electrically connected to said pixel electrode, and has second conductivity type opposite with first conductivity type; With second semiconductor region, it provides at least a portion of the periphery of first semiconductor region, and has first conductivity type.
In addition, reflective liquid crystal display device of the present invention comprises: the light-transmissive substrates with euphotic electrode; And the second conductive-type semiconductor substrate; Be arranged as relative with said light-transmissive substrates; Between the said light-transmissive substrates and the second conductive-type semiconductor substrate, clip liquid crystal, the said second conductive-type semiconductor substrate has first conductive type well, has wherein arranged a plurality of pixel electrodes with matrix-style.Wherein, said trap comprises: first semiconductor region, and it is used as the main electrode area of the on-off element that is electrically connected to said pixel electrode, and has second conductivity type opposite with first conductivity type; With second semiconductor region, it provides at least a portion of the periphery of first semiconductor region, and has first conductivity type.
According to the present invention, even when light gets in the Semiconductor substrate and produces photocarrier, also can suppress photocarrier and further move to as first semiconductor region of part of floating, therefore make it possible to avoid fault.In other words, according to the present invention, can obtain a kind of reflective liquid crystal display device, it has leakproof photosensitiveness, high brightness and high reliability.And, through using this equipment, can construct crystal projection instrument system with high strength and high reliability.
With reference to the explanation of accompanying drawing to exemplary embodiment, it is obvious that further feature of the present invention will become through following.
Description of drawings
Fig. 1 is the equivalent circuit diagram of liquid crystal display of the present invention.
Fig. 2 A is the planimetric map of the pixel portion of the liquid crystal display in the embodiments of the invention 1.
Fig. 2 B is the sectional view of the pixel portion of the liquid crystal display in the embodiments of the invention 1.
Fig. 3 is the sectional view according to liquid crystal display of the present invention.
Fig. 4 describes the view that uses according to the liquid crystal projection apparatus of liquid crystal display of the present invention.
Fig. 5 is the planimetric map of the pixel portion of the liquid crystal display in the embodiments of the invention 2.
Fig. 6 A is the planimetric map of the pixel portion of the liquid crystal display in the embodiments of the invention 3.
Fig. 6 B is the sectional view of the pixel portion of the liquid crystal display in the embodiments of the invention 3.
Fig. 7 is the sectional view of the pixel portion of the liquid crystal display in the embodiments of the invention 4.
Fig. 8 is another sectional view of the pixel portion of the liquid crystal display in the embodiments of the invention 4.
Fig. 9 is the planimetric map of the pixel portion of the liquid crystal display in the embodiments of the invention 5.
Figure 10 is the planimetric map of the pixel portion of the liquid crystal display in the embodiments of the invention 6.
Figure 11 A is the planimetric map of the pixel portion of the liquid crystal display in the embodiments of the invention 7.
Figure 11 B is the sectional view of the pixel portion of the liquid crystal display in the embodiments of the invention 7.
Figure 12 A is the planimetric map of the pixel portion of the liquid crystal display in the embodiments of the invention 8.
Figure 12 B is the sectional view of the pixel portion of the liquid crystal display in the embodiments of the invention 8.
Figure 13 is the sectional view of the pixel portion of the liquid crystal display in the embodiments of the invention 9.
Figure 14 is another sectional view of the pixel portion of the liquid crystal display in the embodiments of the invention 9.
Embodiment
Below, will describe embodiments of the invention in detail with reference to accompanying drawing.
Embodiment 1
Now, will describe embodiments of the invention 1 in detail based on Fig. 1.Fig. 1 is an illustration according to the equivalent circuit diagram of the structure of reflective liquid crystal display device of the present invention.
In Fig. 1 illustration signal wire 1 and 2, the transistor 3 to 6 as the on-off element of pixel portion, liquid crystal 7 to 10, keep capacitor 11 to 14, drive wire (sweep trace) 15 and 16, horizontal shifting register 17 and vertical transfer register 18.And, illustration video line 19 and sampling switch 20 and 21.
Then, with the operation of briefly describing according to the reflective liquid crystal display device of this embodiment.In Fig. 1, with two pixels of matrix description, still with two pixels; The present invention is not restricted to this, but, in the reflective liquid crystal display device of practicality; X pixel * Y picture element matrix (for example, 1280 pixels * 720 pixels and 1920 pixels * 1080 pixels) is arranged.
At first, be in conducting state, drive signal is input to drive wire 15 from vertical transfer register 18 in order to make transistor 3 and 4.During conducting state, usage level shift register 17 is operated sampling switch 20 and 21 successively, and vision signal is transferred to signal wire 1 and 2 from video line 19.In other words, at first sampling switch 20 is opened (open), and the video signal transmission of video line 19 is to signal wire 1.Then, through pixel switch 3 stored charge in keeping capacitor 11, and apply voltage to liquid crystal 7.
Subsequently, close (close) afterwards at sampling switch 20, sampling switch 21 is opened, and the video signal transmission of video line 19 is to signal wire 2.Then, vision signal writes through pixel switch 4 and keeps capacitor 12.According to this in proper order, pixel order on the x direction writes (horizontal direction among the figure, transistor 3 among the figure and 4 orientation)
After signal write all pixels of first row, the transistor 3 and 4 that will be connected to drive wire 15 through vertical transfer register 18 turn-offed.Then, in the pixel that signal is write second row, drive signal is input to drive wire 16 from vertical transfer register 18, makes transistor 5 and 6 become and be in conducting state.Operation subsequently is identical with the operation of the pixel of first row.After signal writes whole pixels, repeat this operation once more.
Fig. 2 A and 2B be respectively illustration according to the planimetric map and the schematic cross sectional view of the dot structure of the reflective liquid crystal display device of this embodiment.Fig. 2 A is the planimetric map of the pixel layout of this embodiment, and Fig. 2 B is the sectional view of the line 2B-2B in Fig. 2 A.In addition, in Fig. 2 B,, except insulation course 32, saved the insulation course between each layer in order to simplify.
In Fig. 2 A and 2B illustration will be as the reflecting electrode 30 of pixel electrode, be located at photomask 31, the dielectric film 32 between reflecting electrode 30 and the gate electrode of processing by polysilicon 33 below the reflecting electrode 30.Through hole 38 is to be used to connect reflecting electrode 30, following line 37 and the inserting column (plug) of lower floor 51.Transistor drain region electrode 34 as the on-off element of pixel is connected to reflecting electrode 30.Transistorized source area 35 is connected to signal wire 40.To transfer to drain region 34 from the electric charge of signal wire 40 through control electrode 33.The conductivity type of diffusion region 36 is identical with the conductivity type of drain region 34 and source area 35.The electrode 39 identical with the voltage of reflecting electrode by its voltage forms capacitor (corresponding to keeping capacitor 11 to 14) with the diffusion region 36 that is arranged in electrode 39 opposites.For reflecting electrode 30, be fit to use metal film, the for example compound film of Al, AlSi, AlCu, Ti, Ta, W, Ag, Pt, Ru, Ni, Au and TiN or these metals.But reflecting electrode 30 specifically is not limited to these materials.Using these metals in any case, can improve reflectivity through polishing.Though the electrode of capacitor is provided in Fig. 2, the electrode of capacitor can be located on the Semiconductor substrate discretely.The first conductive-type semiconductor substrate 70 is p type silicon substrates.In addition, in this embodiment, with the n-MOS transistor as this p type silicon substrate.Therefore, drain region 34, source area 35 and diffusion region 36 are the n type extrinsic semiconductor districts with second conductivity type.
Here, arrive the light that only mainly spills of Semiconductor substrate or semiconductor region from the dielectric film between the reflecting electrode 32, therefore, if light is weakened by photomask 31 and absorbs and do not arrive Semiconductor substrate or semiconductor region is also no problem.But very strong from the light of light source, this light gets into Semiconductor substrate or semiconductor region and is not weakened ideally by photomask 31 and absorb.In case light gets into, and then produces a pair of electronics and hole, and becomes photocarrier.Because in this embodiment, the n-MOS transistor is formed on the p type silicon substrate 70, the hole is passed from the minimum contact region 42 of substrate electric potential and is arrived electrode 41.On the other hand, electron drift arrives the maximum potential part, and passes this part from for example source area 35.Here, if the electronics that produces is captured by drain region 34, the voltage that then is in the part of floating state will reduce, and causes the display characteristic of not expecting.
Shown in Fig. 1,2A and 2B, pixel has on-off element that is connected to reflecting electrode and the maintenance capacitor that is connected to this on-off element at least.In this embodiment, the pixel region in the p type silicon substrate 70 comprises drain region 34, source area 35 and diffusion region 36.Though contact region 42 is provided can for each pixel, and contact region 42 can be included in the pixel region, contact region 42 also can offer every a plurality of pixel, for example, a contact region is provided can for per four pixels.Here, diffusion region 36 constitutes an electrode that keeps capacitor, but can separate with the diffusion region that is used for the absorbing light charge carrier another diffusion region that constitutes an electrode that keeps capacitor is provided.In this case, comprise drain region 34, source area 35 and be used for diffusion region and other diffusion region of absorbing light charge carrier in the pixel region.
In this embodiment, the voltage that is used to form the diffusion region 36 of capacitor sets than is applied to the high value of reference value of the voltage of drain region 34 for.For example, when using vertical orientated liquid crystal to set reference value for 7V, apply voltage 7V ± 5V to the drain region owing to AC driving.In this case, for example, the voltage that is applied to diffusion region 36 sets than is applied to the high 8V of reference value of the voltage of drain region 34 for.Through setting by this way, obtained a kind of structure, the electronics of the photocarrier that wherein in substrate, produces is 36 gatherings fast in the diffusion region, and in the part of floating of drain region 34, assemble hardly, can suppress the reduction of display characteristic thus.It is also noted that, this voltage be defined as with as the earth potential different potential of benchmark.
To represent above-mentioned example with general symbol(s).When the unit charge of majority carrier is confirmed as Q, if because majority carrier is an electronics, unit charge Q=-q (q=1.6 * 10 wherein then
-19C), the product of the reference value of unit charge in the drain region 34 and voltage is-7q.If the voltage of diffusion region 36 is set 8V for, then the product of unit charge in the diffusion region 36 and voltage is-8q, and is littler than the product of the reference value of unit charge in drain region 34 and voltage.By this way; Product through making unit charge and voltage in the diffusion region 36 is littler than the product of the reference value of unit charge in drain region 34 and voltage; Produced this electronics and flowed into the electric potential gradient in the drain region 34, caused thus being absorbed by diffusion region 36 as the electronics of photocarrier.
In addition, in this embodiment, use and on p type silicon substrate, use the transistorized form of n-MOS to describe, still, use and on n type silicon substrate, use the transistorized form of p-MOS also no problem.In this case, because photocarrier is the hole,, for example, set the voltage that is applied to diffusion region 36 for 6V so, make the voltage of diffusion region 36 be lower than the reference value 7V that is applied to drain region 34 for to hole as main charge carrier.At this moment, because majority carrier is the hole, so unit charge is Q=q, and the product of the reference value of unit charge in the drain region 34 and voltage is 7Q.If the voltage of diffusion region 36 is set 6V for, then the product of unit charge in the diffusion region 36 and voltage is 6q, and is littler than the product of the reference value of unit charge in the drain region 34 and voltage.By this way; Product through making unit charge and voltage in the diffusion region 36 is littler than the product of the reference value of unit charge in the drain region 34 and voltage; Produced this hole and flowed into the electric potential gradient in the drain region 34, caused helping hole to be absorbed thus by diffusion region 36 as photocarrier.
And, when on p type silicon substrate, using the n-MOS transistor,, preferably make the maximum voltage 12V of drain region in the voltage ratio drive cycle of diffusion region 36 big in order to use diffusion region 36 absorbing light charge carrier more doughtily.This can make the electric potential gradient steepening, and more thus electronics flows in the diffusion region 36 easily.In addition, in this embodiment, described and used the situation of MOS transistor as the pixel switch element, but the not concrete restriction of the configuration of on-off element.That be because; The problem that the present invention solves is; When the on-off element that will be connected to pixel electrode is in off-state,, then will cause adverse effect in the semiconductor region of a main electrode area that will become the on-off element that is in floating state to display characteristic if electric charge is concentrated.And in this embodiment, though diffusion region 36 constitutes an electrode of capacitor, diffusion region 36 can separate with the diffusion region of an electrode that constitutes capacitor to be provided.
Fig. 3 is the sectional view of pixel portion of the liquid crystal board of this embodiment.Illustration will as the glass substrate 46 of light-transmissive substrates, such as the euphotic electrode 47 of ITO, on ITO side 43 inclination gas deposition (vapor deposition) (aligning) film, at the electrode 44 and the liquid crystal 45 of reflecting electrode tilt vapor deposition.Though, having used vertical orientated liquid crystal in this embodiment, liquid crystal is not limited specifically to this liquid crystal.And, though the film-stack with anti-reflection film structure has been saved this film here on the back surface of glass side.
Then, with using Fig. 4 to describe the crystal projection instrument system that uses reflective liquid crystal display device of the present invention.Fig. 4 is to use the view of an example of the crystal projection instrument system of reflective liquid crystal display device of the present invention.Illustration lamp 101, reverberator 102, bar integrator (rodintegrator) 103, collimation lens, polarization conversion system 105, relay lens 106, dichronic mirror 107 and polarization beam splitter 108.In addition, also illustration cross prisms 109, reflective liquid crystal display device of the present invention 110, projecting lens 111 and completely reflecting mirror 112.From be reflected device 102 reflections and converge in the import of integrator of the luminous flux of lamp 101 output.Reverberator 102 is ellipsoidal reflectors, and its focus is in the import of luminous component and integrator.The luminous flux that gets into integrator 103 in the integrator internal reflection zero to several times, and go out interruption-forming secondary souce image at integrator.Though as the method that is used to form the secondary souce image, have the method for using compound eye, here it saved.Make luminous flux become substantially parallel light, and get into the polarization beam splitter 105 of polarization conversion system through collimation lens 104 from secondary souce.The P ripple is by polarization beam splitter 105 reflections, and all the P ripple converts the S ripple to through 1/2 ripple plate, and the S ripple gets into relay lens 106.Luminous flux is converged onboard by relay lens 106.When luminous flux converges onboard; The color separated system is furnished with color separated dichronic mirror 107, polarization plates (not shown), polarization beam splitter 108 and cross prisms 109, and the S ripple gets in prepared three reflective liquid crystal display device 110 of the present invention each.In reflective liquid crystal display device 110 of the present invention, through mating the voltage of controlling each pixel with screen picture.Be modulated into oval polarized light (or linearly polarized photon) at S ripple, use polarization beam splitter 108 transmission P wave components screen picture, and then through after cross prisms 109 synthetic its colors, from projecting lens 111 projection screen images.
Then, with using Fig. 2 A and 2B or Fig. 3 to describe the manufacturing approach of reflective liquid crystal display device of the present invention.
Portion of hot oxidation through p type silicon substrate 70 has formed the field oxide film such as LOCOS (local oxidation of silicon).And through again substrate being carried out thermal oxide, having formed thickness is the oxidation film of grid of 600 dusts.Subsequently, after forming pattern, through with 10
15Cm
-2The dosage of magnitude is injected into phosphonium ion in the substrate, and having formed impurity concentration is 10
18Cm
-3The diffusion region 36 of magnitude.Subsequently, form with being mixed with 10
20Cm
-2Gate electrode 33 and electrode 39 that the n type polysilicon of the phosphorus of magnitude is processed.Then, through with 10
12Cm
-2The dosage of magnitude is injected into phosphonium ion in the substrate, has formed the drain electrode of n type low concentration, and it is that impurity concentration is 10
16Cm
-3The n type extrinsic semiconductor district of magnitude.Through CVD process deposition oxide film on substrate, and through the oxidation film of etch back process removal except the sidewall of polysilicon electrode 39 and polygate electrodes 33.Afterwards, with the photoresist of patterning as mask, through with 10
15Cm
-2The dosage of magnitude is injected into phosphonium ion in the substrate, and having formed impurity concentration is 10
19Cm
-3The source area 35 and the drain region 34 of magnitude, and formed the n-MOS transistor thus.Form the p-MOS transistor similarly.
Afterwards, on the whole surface of substrate, form interlayer dielectric.As interlayer dielectric, can adopt such as PSG (phosphosilicate glass) and NSG (undoped silicate glass)/BPSG (boron phosphorus silicate glass) or TEOS (Tetraetoxy-silane, tetraethoxysilane).Through directly over source area 35 and drain region 34, forming contact hole pattern,, and, formed first metal conducting layer such as signal wire 40, electrode 41 and lower floor 51 subsequently through the Al of patterning vapor deposition through sputter mode evaporating Al in the above.In order to improve the ohmic contact characteristic between first metal conducting layer and source area or the drain region, the barrier metal of the stack membrane of formation such as Ti and TiN is desirable between first metal conducting layer and source area 35 or drain region 34.Afterwards, range upon range of and form interlayer dielectric and, formed metal film subsequently as photomask 31 such as second metal conductive film of following line 37.For example, metal film is the metal such as Ti, TiN or Al, or its stack membrane, to this not concrete qualification.Use this layer to cover key light.At patterned film and after further forming interlayer dielectric subsequently, inserting column is opened.Subsequently, in inserting column, after the deposition W, the surface is flattened through the CMP process.Afterwards, through sputter procedure, deposit thickness is approximately the reflection electrode layer of 200nm from the teeth outwards, and should the surface through patterning, has formed reflecting electrode 30.Afterwards, through the plasma enhanced CVD process, forming thickness from the teeth outwards is the silicon oxide film as diaphragm 32 of 100nm.In addition, use the inclination vapor deposition apparatus, form thickness from the teeth outwards and be approximately being used for of 100nm to the directed silicon oxide film of liquid crystal, as inclination gas deposition (aligning) film 44.
Similarly, use the inclination vapor deposition apparatus, on the euphotic electrode 47 of glass substrate 46, also form the silicon oxide film that thickness is approximately 100nm, as inclination gas deposition (aligning) film 43, and range upon range of subsequently p type substrate 70 and glass substrate 46.Through vertical orientated liquid crystal is inserted between the range upon range of substrate, and, made reflective liquid crystal display device through the wire bond extraction electrode.When using three reflective liquid crystal display device to make, the crystal projection instrument system that can obtain to have high brightness and high reliability.
Embodiment 2
To embodiments of the invention 2 be described based on Fig. 5.Fig. 5 is used for the planimetric map of illustration according to the pixel layout of the dot structure of the reflective liquid crystal display device of embodiment 2.In embodiment 2, the diffusion region 36 of embodiment 1 is arranged to U-shaped.In embodiment 2, thereby be arranged to the periphery of U-shaped around drain region 34 as the n type diffusion region 36 of the absorption edge of photocarrier.Center on thereby n type diffusion region 36 can be provided except the gate electrode 33 that wherein is connected to grid wiring 62 and the channel region of the region overlapping between source area 35 and the drain region 34, form.In addition, be not limited to U-shaped, for example, thereby can provide n type diffusion region 36 L shaped around drain region 34 with what observe from p type silicon substrate 70 as the n type diffusion region 36 of the absorption edge of photocarrier.
Now, will describe embodiments of the invention 3 in detail based on Fig. 6 A and 6B.
In Fig. 6 A and 6B, show the pixel portion that is used for according to the reflective liquid crystal display device of embodiments of the invention 3.Fig. 6 A is the planimetric map of pixel portion, and Fig. 6 B is the sectional view of pixel portion.Here, with assembly similar among the embodiment 1 use with embodiment 1 in identical Reference numeral represent, with the detailed description of saving wherein.
In embodiment 3, except the assembly of embodiment 1, between drain region 34 and diffusion region 36, formed p type district 50.P type district 50 has barrier functions, makes almost can not arrive drain region 34 at p type silicon substrate 70 inner electronics, the photocarriers that produce.Shown in Fig. 6 B, p type district 50 is preferably placed at from the surface to the deep inside of p type silicon substrate 70.But the present invention specifically is not limited to this, even and 50 in p type district is positioned at upward surperficial or only in the deep inside of p type silicon substrate, then the potential barrier effect still exists, for example, inject through ion, through with a plurality of steps injection ions, can form barrier layer.And in embodiment 3, like the situation of embodiment 1, diffusion region 36 has the function of the absorption edge of electronics.In embodiment 3, through forming the size drain region 34 littler, and do not receive rayed through using on drain region 34 lower floor 51 of formation to cover drain region 34 than the size of the drain region 34 of embodiment 1, suppressed light incident from a side directly over the drain region 34.The diffusion of photocarrier in drain region 34 that produces as 50 inhibition drain regions, the p type district of potential barrier, 34 outside incident lights.Therefore, further suppressed because the reduction of the display device characteristic that light incident causes.In this embodiment, as among the embodiment 1, adjusting the voltage of diffusion region 36.But, in this embodiment, diffusion region 36 can be provided, even and the p type district 50 as potential barrier only is provided, also can suppress the diffusion of photocarrier in drain region 34.In other words, in Fig. 6 B, though the pixel region in the p type silicon substrate 70 comprises drain region 34, source area 35, diffusion region 36 and p type district 50, can be with the zone that comprises drain region 34, source area 35 and p type district 50 as pixel region.But for the pixel that comprises diffusion region 36, its voltage quilt is adjusted with the pixel among the embodiment 1 similarly, compares with the pixel that does not have diffusion region 36, can further suppress the diffusion of photocarrier to drain region 34.
Now, with the manufacturing approach of the reflective liquid crystal display device of describing this embodiment.Basic step is identical with step in embodiment 1.For example, can be through forming oxidation film of grid, this film of patterning, and this film is carried out the boron ion under below three accelerating potential conditions subsequently and inject: 30KeV, 70KeV and 140KeV make the impurity concentration of film become 5 * 10
17Cm
-3Magnitude forms p type district 50.Subsequently, after this film of patterning, be 10 through this film being carried out dosage
15Cm
-2The phosphonium ion of magnitude injects, and having formed impurity concentration is 10
18Cm
-3The diffusion region 36 of magnitude.Other step is with identical in the step of example in 1.In addition, in this embodiment, the example of p type substrate has been described, and with the n-MOS transistor as pixel switch, still, use n type substrate and also no problem as pixel switch with the p-MOS transistor.At that time, because photocarrier is the hole, be n type district so will become the zone 50 of barrier layer.
Afterwards, similarly, use the inclination vapor deposition apparatus, same on the euphotic electrode 47 of glass substrate 46, form the silicon oxide film that thickness is approximately 100nm, as inclination gas deposition (aligning) film 43; Subsequently, range upon range of p type silicon substrate 70 and glass substrate 46.Through between range upon range of substrate, injecting vertical orientated liquid crystal, and draw (takeout) electrode, made reflective liquid crystal display device through the wire bond mode.When using three reflective liquid crystal display device to make, the crystal projection instrument system that can obtain to have high brightness and high reliability.
Now, will describe embodiments of the invention 4 in detail based on Fig. 7.
Fig. 7 is the sectional view of pixel portion that is used for the reflective liquid crystal display device of embodiments of the invention 4.In this embodiment, the part below drain region 34 forms the p type district 52 with barrier functions.In this embodiment, like situation, the absorption edge of diffusion region 36 as electronics is provided also in embodiment 1 and 3.In embodiment 4; Like the situation in embodiment 3; Through forming the size drain region 34 littler than the size of the drain region 34 of embodiment 1; And do not receive rayed through using on drain region 34 lower floor 51 of formation to cover drain region 34, suppressed light incident equally from a side directly over the drain region 34.Can be by suppressing as the p type district of potential barrier 52 by through oblique incidence or be scattered in the diffusion of photocarrier that light that the depths gets into the zone below the drain region 34 produces to drain region 34.The reduction of the display characteristic that therefore, has suppressed to a great extent to cause owing to light incident.Though the degree of depth in preferred p type district 52 is near drain electrode and shallow, thereby so that improve the photocarrier rejection characteristic and increase electric capacity, the degree of depth also can be considered such as the design details of problem of withstand voltage and arbitrarily be provided with.
And, in this embodiment, adjust the voltage of diffusion region 36 with the situation of embodiment 1 the samely.But, in this embodiment, diffusion region 36 can be provided, even and p type district 52 only is provided, also can suppress the diffusion of photocarrier in drain region 34.In other words, in Fig. 7, though the pixel region in p type silicon substrate 70 comprises drain region 34, source area 35, diffusion region 36 and p type district 52, also can be with the zone that comprises drain region 34, source area 35 and p type district 52 as pixel region.But for the pixel that comprises diffusion region 36, its voltage quilt is adjusted with the pixel among the embodiment 1 similarly, compares with the pixel that does not have diffusion region 36, can further suppress the diffusion of photocarrier to drain region 34.And, like Fig. 8 institute illustration,,, consider the inhibition photocarrier though the number of steps in the process increases when through being combined in p type district 50 among the embodiment 3 when forming p type districts 53, that yes is preferred for it.When using three reflective liquid crystal display device to make, the crystal projection instrument system that can obtain to have high brightness and high reliability.
In embodiment 3, described when when the surface of the substrate of p type substrate 70 is observed, the example of the potential barrier in p type district 50 is provided for a part of linearity around the drain region 34.In this embodiment, provide and in the p of embodiment 3 type district similarly as the p type district 54 of potential barrier, thereby with letter " L " shape of observing or " U " shape from the substrate surface of p type substrate 70 around drain region 34.
Fig. 9 is the planimetric map of the pixel portion of the reflective liquid crystal display device in embodiments of the invention 5.In Fig. 9, the p type district 54 that is used as potential barrier is arranged to letter " U " shape.In Fig. 9, arrange with letter " U " shape as the p type district 54 of potential barrier, thereby around drain region 34.P type district 54 can be provided, center on thereby except the part (being channel region) that the gate electrode 33 that wherein is connected to grid wiring 62 and the zone between source area 35 and the drain region 34 overlap each other, form.In p type district 54, be combined in illustrative p type district 52 among Fig. 7, also can provide potential barrier to center on the drain region 34 that comprises 34 bottoms, drain region.In addition, in Fig. 9, though p type district 54 arranges that with alphabetical " U " shape this embodiment is not restricted to this, it can be arranged with letter " L " shape, and be set to around a channel region part on every side.
Figure 10 is the planimetric map of pixel portion that is used for the reflective liquid crystal display device of embodiments of the invention 6.
Like institute's illustration in Figure 10, gate line 86 is connected to transistorized grid via contact region 85, and propagates into the drain region 89 that is connected with reflecting electrode from the signal of signal wire 82.District 81 is contact regions of signal wire 82.Drain region 89 is connected through the contact with rectangle first metal conducting layer 80 on being positioned at drain region 89, and is connected to rectangle second metal conducting layer 84 that is positioned on first metal conducting layer 80.In addition, first and second metal conducting layers 80 and 84 can not be rectangles specifically, and their shape can be set as required.
In this embodiment, go up in any direction, the size of the second metal conducting layer 84 all size than first metal conducting layer 80 is little.In other words, when from the unilateral observation of Semiconductor substrate, the periphery of first metal conducting layer 80 is set peripheral big than second metal conducting layer 84 for, makes the metal conducting layer 80 of winning cover second metal conducting layer 84.
The inserting column part 83 connection top reflecting electrodes and second metal conducting layer 84 come the incident light in the space between the comfortable reflecting electrode around inserting column part 83, to leak.But the basic center of gravity through inserting column part 83 being arranged in second metal conducting layer 84 (comprise center of gravity or confirm as the zone of center of gravity basically) position can be suppressed at the incident light in the Semiconductor substrate.By this way, incident light is by 84 reflections of second metal conducting layer.Come the incident light in the space between comfortable second metal conducting layer 84 and the metal level 87 will be once more by 80 reflections of first metal conducting layer, wherein metal level 87 be located at around second metal conducting layer 84 and be arranged in the layer identical with second metal conducting layer 84.In other words, when when liquid crystal side is observed, under second metal conducting layer 84 and the space between the metal level 87, arranged first metal conducting layer 80, thereby improved shaded effect as the identical conduction layer.
Because by this way, metal conducting layer is present in any district, so for the light that will get into Semiconductor substrate, this light will be by repeatedly reflection.Therefore, be applied to embodiment 1 to 5, can be suppressed at the incident light in the Semiconductor substrate through distributing with this embodiment.In addition, because the structure of Semiconductor substrate, can further suppress because the characteristic reduction that photocarrier causes the adverse effect of on-off element operation.In addition, littler through making semiconductor region than metal wiring layer 80, suppressed in Semiconductor substrate the absolute magnitude of the incident light of (particularly, near the Semiconductor substrate the drain region) to a great extent.
Use has the pixel of this structure, has made reflective liquid crystal display device.When using three reflective liquid crystal display device to make, the crystal projection instrument system that can obtain to have high reliability.Wherein, even for the high brightness incident light, can not produce because the characteristic that causes of sewing of light reduces yet.
Embodiment 7
Now, will embodiments of the invention 7 be described based on Figure 11 A and 11B.In addition, represent with identical Reference numeral with assembly identical among the embodiment 1, and will save their description.
Figure 11 A and 11B are planimetric map and constructed profile, respectively illustration the dot structure of reflective liquid crystal display device of this embodiment.Figure 11 A is the planimetric map of the pixel layout of this embodiment, and Figure 11 B is the sectional view along the line 11B of Figure 11 A to 11B.In addition, in Figure 11 B, except insulation course 32,, saved the insulation course between each layer in order to simplify.
In Figure 11 A and 11B; Being different from Fig. 2 A and the 2B part of describing example 1 is; Though in Fig. 2 A and 2B with p type silicon substrate as Semiconductor substrate, in Figure 11 of this embodiment A and 11B, with n type silicon substrate 71 with p trap 72 as Semiconductor substrate.Pixel region in the p trap 72 in n type silicon substrate 71 comprises drain region 34, source area 35 and diffusion region 36.
In this embodiment, the voltage that is used to form the diffusion region 36 of capacitor sets than is applied to the high value of reference value of the voltage of drain region 34 for.For example, when using vertical orientated liquid crystal to set reference value for 7V, because alternating current drives and applies voltage 7V ± 5V to the drain region.In this case, for example, the fixed voltage that is applied to diffusion region 36 is set 8V for.Through setting by this way, obtained a kind of structure, electronics 36 gatherings fast that wherein in substrate, produce in the diffusion region as photocarrier, and in the part of floating of drain region 34, assemble hardly, can suppress the reduction of display characteristic thus.
To represent above-mentioned example with general symbol(s).When the unit charge of majority carrier is confirmed as Q, if because majority carrier is an electronics, unit charge Q=-q (q=1.6 * 10 wherein
-19C), the product of the reference value of unit charge in the drain region 34 and voltage is-7q.If the voltage of diffusion region 36 is set 8V for, then the product of unit charge in the diffusion region 36 and voltage is-8q, and is littler than the product of the reference value of unit charge in the drain region 34 and voltage.By this way; Product through making unit charge and voltage in the diffusion region 36 is littler than the product of the reference value of unit charge in the drain region 34 and voltage; Produced this electronics and flowed into the electric potential gradient in the drain region 34, caused thus being absorbed by diffusion region 36 as the electronics of photocarrier.
In addition, in this embodiment, use and in the P trap of n type silicon substrate, use the transistorized form of n-MOS to describe, still, use and in the n trap of p type silicon substrate, use the transistorized form of p-MOS also no problem.In this case, because photocarrier is the hole,, for example, set the voltage that is applied to diffusion region 36 for 6V so, make the voltage of diffusion region 36 be lower than the reference value 7V that is applied to drain region 34 for to hole as main charge carrier.At this moment, because majority carrier is the hole, so unit charge is Q=q, and the product of the reference value of unit charge in the drain region 34 and voltage is 7Q.If the voltage of diffusion region 36 is set 6V for, then the product of unit charge in the diffusion region 36 and voltage is 6q, and its product than the reference value of unit charge in the drain region 34 and voltage is little.By this way; Product through making unit charge and voltage in the diffusion region 36 is littler than the product of the reference value of unit charge in the drain region 34 and voltage; Produced this hole and flowed into the electric potential gradient in the drain region 34, caused helping hole to be absorbed thus by diffusion region 36 as photocarrier.
In addition, when in the p trap of n type silicon substrate, using the n-MOS transistor,, preferably make the maximum voltage 12V of drain region in the voltage ratio drive cycle of diffusion region 36 big in order to use diffusion region 36 absorbing light charge carrier more doughtily.This can make the electric potential gradient steepening, and more thus electronics flows in the diffusion region 36 easily.In addition, in this embodiment, described with the situation of MOS transistor as the pixel switch element, but the not concrete restriction of the configuration of on-off element.That be because; The problem that the present invention solves is; When the on-off element that will be connected to pixel electrode is in off-state,, then will cause adverse effect in the semiconductor region of a main electrode area that will become the on-off element that is in floating state to display characteristic if electric charge is concentrated.In addition, in this embodiment, though diffusion region 36 constitutes an electrode of capacitor, diffusion region 36 can separate with the diffusion region of an electrode that constitutes capacitor to be provided.
Then, use Figure 11 A and 11B to describe the manufacturing approach of reflective liquid crystal display device of the present invention.
Portion of hot oxidation through to n type silicon substrate 71 has formed the field oxide film such as LOCOS (local oxidation of silicon).Subsequently, with LOCOS as mask, through with 10
12Cm
-2The dosage of magnitude is injected into the boron ion in the substrate, has formed the p trap 72 as p type extrinsic region.Then, through substrate is carried out thermal oxide once more, forming thickness is the oxidation film of grid of 600 dusts.Subsequently, after forming pattern, through with 10
15Cm
-2The dosage of magnitude is injected into phosphonium ion in the substrate, and having formed impurity concentration is 10
18Cm
-3The diffusion region 36 of magnitude.Subsequently, form by being mixed with 10
20Cm
-3Gate electrode 33 and electrode 39 that the n type polysilicon of the phosphorus of magnitude is processed.Then, through with 10
12Cm
-2The dosage of magnitude is injected into phosphonium ion in the substrate, has formed the drain electrode of n type low concentration, and it is that impurity concentration is 10
16Cm
-3The n type extrinsic semiconductor district of magnitude.Through CVD process deposition oxide film on substrate, and through the oxidation film of etch back process removal except the sidewall of polysilicon electrode 39 and polygate electrodes 33.Afterwards, with the photoresist of patterning as mask, through with 10
15Cm
-2The dosage of magnitude is injected into phosphonium ion in the substrate, and having formed impurity concentration is 10
19Cm
-3The source area 35 and the drain region 34 of magnitude, and formed the n-MOS transistor thus.Form the p-MOS transistor similarly.
Afterwards, on the whole surface of substrate, form interlayer dielectric.As interlayer dielectric, can adopt such as PSG (phosphosilicate glass) and NSG (undoped silicate glass)/BPSG (boron phosphorus silicate glass) or TEOS dielectric films such as (tetraethoxysilanes).Through directly over source area 35 and drain region 34, forming contact hole pattern,, and, formed first metal conducting layer such as signal wire 40, electrode 41 and lower floor 51 subsequently through the Al of patterning vapor deposition through sputter mode evaporating Al in the above.In order to improve the ohmic contact characteristic between first metal conducting layer and source area or the drain region, the barrier metal of the stack membrane of formation such as Ti and TiN is desirable between first metal conducting layer and source area 35 or drain region 34.Afterwards, range upon range of and form interlayer dielectric and, formed metal film subsequently as photomask 31 such as second metal conductive film of following line 37.For example, metal film is the metal such as Ti, TiN or Al, or its stack membrane, to this not concrete qualification.Use this layer to cover key light.At this film of patterning and after further forming interlayer dielectric subsequently, inserting column is opened.Subsequently, in inserting column, after the deposition W, this surface is flattened through the CMP process.Afterwards, through sputter procedure, deposit thickness is approximately the reflection electrode layer of 200nm from the teeth outwards, and should form reflecting electrode 30 in the surface through patterning.Afterwards, through the plasma enhanced CVD process, forming thickness from the teeth outwards is the silicon oxide film as diaphragm 32 of 100nm.In addition, use the inclination vapor deposition apparatus, on this surface, form thickness and be approximately being used for of 100nm to the directed silicon oxide film of liquid crystal, as inclination gas deposition (aligning) film 44.
Equally, use the inclination vapor deposition apparatus, also on the euphotic electrode 47 of glass substrate 46, form the silicon oxide film that thickness is approximately 100nm, as inclination gas deposition (aligning) film 43, and range upon range of subsequently p type substrate 70 and glass substrate 46.Through vertical orientated liquid crystal is inserted between the range upon range of substrate, and, made reflective liquid crystal display device through the wire bond extraction electrode.When using three reflective liquid crystal display device to make, the crystal projection instrument system that can obtain to have high brightness and high reliability.
Now, describe embodiments of the invention 8 in detail based on Figure 12 A and 12B.
In Figure 12 A and 12B, show the pixel portion that is used for according to the reflective liquid crystal display device of embodiments of the invention 8.Figure 12 A is the planimetric map of pixel portion, and Figure 12 B is the sectional view of pixel portion.Here, with assembly similar among the embodiment 3 and 7 use with embodiment 3 and 7 in identical Reference numeral represent, with the detailed description of saving wherein.
In embodiment 8, the assembly in embodiment 7, between drain region 34 and diffusion region 36, formed p type district 50.There is the function of potential barrier in p type district 50, makes almost can not arrive drain region 34 at p trap 72 inner electronics, the photocarriers that produce.Shown in Figure 12 B, p type zone 50 is preferably placed at from the surface to the deep inside of p trap 72.But the present invention specifically is not limited to this, even and 50 in p type district is positioned at upward surperficial or only in the deep inside of p trap 72, the potential barrier effect also still exists, for example,,, can form barrier layer through with a plurality of steps injection ions through the ion injection.In addition, in embodiment 8, like the situation of embodiment 7, diffusion region 36 has the function of the absorption edge of electronics.In embodiment 8; Through forming the size drain region 34 littler than the size of the drain region 34 of embodiment 7; And do not receive rayed through using the lower floor 51 that on drain region 34, forms to cover drain region 34, suppressed the light incident of a side directly over the comfortable drain region 34.Suppress the diffusion of photocarrier in drain region 34 by p type district 50 by the drain region 34 outside light generations that get into as potential barrier.Therefore, further suppressed because the reduction of the display characteristic that light incident causes.In this embodiment, with the same voltage of adjusting diffusion region 36 in embodiment 7.But, in this embodiment, diffusion region 36 can be provided, even and the p type district 50 as potential barrier only is provided, also can suppress the diffusion of photocarrier in drain region 34.In other words, in Figure 12 B, though the pixel region in the p trap 72 comprises drain region 34, source area 35, diffusion region 36 and p type district 50, also can be with the zone that comprises drain region 34, source area 35 and p type district 50 as pixel region.But for the pixel that comprises diffusion region 36, its voltage quilt is adjusted with the pixel among the embodiment 7 similarly, compares with the pixel that does not have diffusion region 36, can further suppress the diffusion of photocarrier to drain region 34.
Now, with the manufacturing approach of the reflective liquid crystal display device of describing this embodiment.Basic step is identical with step in embodiment 7.For example, can be through forming oxidation film of grid, this film of patterning, and this film is carried out the boron ion under below three accelerating potential conditions subsequently and inject: 30KeV, 70KeV and 140KeV make the impurity concentration of film become 5 * 10
17Cm
-3Magnitude forms p type district 50.Subsequently, after this film of patterning, be 10 through this film being carried out dosage
15Cm
-2The phosphonium ion of magnitude injects, and having formed impurity concentration is 10
18Cm
-3The diffusion region 36 of magnitude.Other step is identical with step in embodiment 7.In addition, in this embodiment, the example of the n type silicon substrate with P trap has been described, and with the n-MOS transistor as pixel switch, still, use p type silicon substrate with n trap and also no problem as pixel switch with the p-MOS transistor.At that time, because photocarrier is the hole, be n type district so will become the zone 50 of potential barrier.
Afterwards, similarly, use the inclination vapor deposition apparatus, also on the euphotic electrode 47 of glass substrate 46, form the silicon oxide film that thickness is approximately 100nm, as inclination gas deposition (aligning) film 43; And range upon range of n type silicon substrate 71 and glass substrate 46 subsequently.Through the vertical orientated liquid crystal of injection between range upon range of substrate, and, made reflective liquid crystal display device through wire bond mode extraction electrode.When using three reflective liquid crystal display device to make, the crystal projection instrument system that can obtain to have high brightness and high reliability.
Now, will describe embodiments of the invention 9 in detail based on Figure 13.
Figure 13 is the sectional view of pixel portion that is used for the reflective liquid crystal display device of embodiments of the invention 9.In this embodiment, the part below drain region 34 forms the p type district 52 with barrier functions.In this embodiment, the same like embodiment 7 with 8 situation, the absorption edge of diffusion region 36 as electronics also is provided.In embodiment 9; As the situation of embodiment 3; Through forming the size drain region 34 littler than the size of the drain region 34 of embodiment 7; And do not receive rayed through using on drain region 34 lower floor 51 of formation to cover drain region 34, also suppressed light incident from a side directly over the drain region 34.Can be by suppressing as the p type district of potential barrier 52 by the diffusion of photocarrier in drain region 34 of the light generation in the zone below the depths gets into drain region 34 through oblique incidence or scattering.Therefore, suppressed to a great extent because the reduction of the display characteristic that light incident causes.Though the degree of depth in preferred p type district 52 is near drain electrode and shallow, thereby improve the photocarrier rejection characteristic, thereby and increase electric capacity, the degree of depth can be considered such as the design details of problem of withstand voltage and arbitrarily be provided with.
And, in this embodiment, adjust the voltage of diffusion region 36 with the situation of embodiment 7 the samely.But, in this embodiment, diffusion region 36 can be provided, even and p type district 52 only is provided, also can suppress the diffusion of photocarrier in drain region 34.In other words, in Figure 13, though the pixel region in the p trap 72 of n type silicon substrate comprises drain region 34, source area 35, diffusion region 36 and p type district 52, also can be with the zone that comprises drain region 34, source area 35 and p type district 52 as pixel region.But for the pixel that comprises diffusion region 36, its voltage quilt is adjusted with the pixel of embodiment 7 similarly, compares with the pixel that does not have diffusion region 36, can further suppress the diffusion of photocarrier to drain region 34.And, like Figure 14 institute illustration,,, consider the inhibition photocarrier though the number of steps of process increases when through being combined in p type district 50 among the embodiment 8 when forming p type districts 53, that yes is preferred for it.When using three reflective liquid crystal display device to make, the crystal projection instrument system that can obtain to have high brightness and high reliability.
Although reference example property embodiment has described the present invention, it is understandable that the present invention is not limited to disclosed exemplary embodiment.Thereby accompanying claims will be endowed the most wide in range explanation contains all this modifications and equivalent configurations and function.
Claims (7)
1. reflective liquid crystal display device comprises:
Light-transmissive substrates with euphotic electrode; And
The first conductive-type semiconductor substrate is arranged as relatively with said light-transmissive substrates, between the said light-transmissive substrates and the first conductive-type semiconductor substrate, clips liquid crystal, and the said first conductive-type semiconductor substrate has a plurality of pixel electrodes of arranging with matrix-style;
Wherein,
The said first conductive-type semiconductor substrate comprises:
First semiconductor region, the main electrode area that it has second conductivity type opposite with said first conductivity type and is used as on-off element, said on-off element is electrically connected to said pixel electrode; With
Second semiconductor region, itself and said on-off element are provided at the part place of the periphery of first semiconductor region discretely, have first conductivity type, and as potential barrier.
2. reflective liquid crystal display device according to claim 1, the said part of the periphery of wherein said first semiconductor region comprise from the part on every side of first semiconductor region of the substrate plane unilateral observation of the said first conductive-type semiconductor substrate and/or at least a portion in the zone below first semiconductor region.
3. reflective liquid crystal display device comprises:
Light-transmissive substrates with euphotic electrode; And
The second conductive-type semiconductor substrate; Be arranged as relative with said light-transmissive substrates; Between the said light-transmissive substrates and the second conductive-type semiconductor substrate, clip liquid crystal; The said second conductive-type semiconductor substrate has trap, has wherein arranged a plurality of pixel electrodes with matrix-style, and said trap has first conductivity type opposite with said second conductivity type;
Wherein,
Said trap comprises:
First semiconductor region, it is as the main electrode area of on-off element, and said on-off element is electrically connected to said pixel electrode, and said first semiconductor region has said second conductivity type; With
Second semiconductor region, itself and said on-off element are provided at the part place of the periphery of first semiconductor region discretely, have first conductivity type, and as potential barrier.
4. reflective liquid crystal display device according to claim 3, the said part of the periphery of wherein said first semiconductor region comprise from the part on every side of first semiconductor region of the substrate plane unilateral observation of the said second conductive-type semiconductor substrate and/or at least a portion in the zone below first semiconductor region.
5. according to claim 1 or 3 described reflective liquid crystal display device; Wherein, When the unit charge of the second conductivity type majority carrier is confirmed as Q,, comprise the 3rd semiconductor region about the second conductivity type majority carrier; The product of its voltage and Q is littler and have second conductivity type than the product of the reference value of the voltage in first semiconductor region and Q, and second semiconductor region is present between first semiconductor region and the 3rd semiconductor region at least.
6. according to claim 1 or 3 described reflective liquid crystal display device; Wherein, On first semiconductor region; Through the corresponding insulation layer first conductive layer, second conductive layer and said pixel electrode are provided successively, and when when said liquid crystal side is observed, first and second conductive layers are arranged such that first conductive layer is placed on below the opening of second conductive layer.
7. a use is according to the crystal projection instrument system of claim 1 or 3 described reflective liquid crystal display device.
Applications Claiming Priority (9)
| Application Number | Priority Date | Filing Date | Title |
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| JP2006-114432 | 2006-04-18 | ||
| JP2006114432 | 2006-04-18 | ||
| JP2006114432 | 2006-04-18 | ||
| JP2006114433 | 2006-04-18 | ||
| JP2006114433 | 2006-04-18 | ||
| JP2006-114433 | 2006-04-18 | ||
| JP2007106671 | 2007-04-16 | ||
| JP2007106671A JP5094191B2 (en) | 2006-04-18 | 2007-04-16 | Reflective liquid crystal display device and liquid crystal projector system |
| JP2007-106671 | 2007-04-16 |
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| Application Number | Title | Priority Date | Filing Date |
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| CNB2007101008049A Division CN100557495C (en) | 2006-04-18 | 2007-04-18 | Reflective liquid crystal display device and crystal projection instrument system |
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| CN101614899B true CN101614899B (en) | 2012-05-02 |
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| CN2009101604934A Expired - Fee Related CN101614899B (en) | 2006-04-18 | 2007-04-18 | Reflection type liquid crystal display apparatus and liquid crystal projector system |
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Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1217479A (en) * | 1997-11-06 | 1999-05-26 | 佳能株式会社 | Liquid-crystal display device |
| US6480179B1 (en) * | 1999-03-10 | 2002-11-12 | Hitachi, Ltd. | Image display invention |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB8914554D0 (en) * | 1989-06-24 | 1989-08-16 | Lucas Ind Plc | Semiconductor device |
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2007
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Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1217479A (en) * | 1997-11-06 | 1999-05-26 | 佳能株式会社 | Liquid-crystal display device |
| US6480179B1 (en) * | 1999-03-10 | 2002-11-12 | Hitachi, Ltd. | Image display invention |
Non-Patent Citations (1)
| Title |
|---|
| JP特开平8-146458A 1996.06.07 |
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| CN100557495C (en) | 2009-11-04 |
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