CN101578710B

CN101578710B - A light-emitting device using voltage switchable dielectric material

Info

Publication number: CN101578710B
Application number: CN200680043524.2A
Authority: CN
Inventors: L·科索斯基
Original assignee: Shocking Technologies Inc
Current assignee: Shocking Technologies Inc
Priority date: 2005-11-22
Filing date: 2006-11-22
Publication date: 2013-05-22
Anticipated expiration: 2026-11-22
Also published as: CN101507129B; CN101507129A; CN101578710A

Abstract

A voltage switchable dielectric material (VSD) material as part of a light-emittin component, including LEDs and OLEDs.

Description

Use the luminaire of voltage variable dielectric material

Related application

The application requires in the U.S. Provisional Patent Application 60/740 of submission on September 29th, 2005,961 priority, the name of this temporary patent application is called " Light Emitting DevicesWith ESD Characteristics ", includes aforementioned application in this paper by the mode of quoting herein.

This application also requires the U.S. Provisional Patent Application 60/739 of submission on September 22nd, 2005,725 priority, the name of this temporary patent application is called " RFID Tag Using Voltage Switchable Dielectric Material ", includes aforementioned application in this paper by the mode of quoting herein.

Technical field

Disclosed embodiment relates in general to the luminaire field.More specifically, embodiment described herein comprises integrated or receives the luminaire of voltage variable dielectric material (voltage switchabledielectric material).

Background technology

Traditional ray structure, incandescent lamp bulb for example, higher by efficient such as LED and OLED, the ray structure that power is stronger replaces.Although new ray structure has provided more advantage, they are simultaneously also more expensive, more are difficult to make and often also will use special material.And although this new equipment may have the relatively long life-span than traditional ray structure, LED and OLED are exposed to transient state electricity condition lower time and may damage (fail).Particularly, organic and inorganic light-emitting equipment comprises semiconductor chip and polymer for these equipment, and is extremely sensitive to static discharge (ESD) and other voltage transients such as electric over-stress (EOS), electromagnetic pulse (EMP).These equipment are all protected by avalanche diode or polymer surge inhibitor in the past.

Description of drawings

Fig. 1 is according to embodiments of the present invention, is constructed to receive or the block diagram of the luminaire of integrated VSD material.

Fig. 2 is according to an embodiment of the invention, is configured to comprise the rough schematic view of the light-emitting diode of VSD material.

Fig. 3 shows according to one or more embodiments of the present invention, is configured to contain the LED equipment of VSD material.

Fig. 4 shows according to of the present invention and is installed to one and receives the rebasing substrate of VSD material or the LED equipment on platform.

Fig. 5 shows another embodiment, and wherein, one or more LED equipment are installed in a rebasing substrate (underlyingsubstrate) or other multicomponent platforms of receiving the VSD material according to an embodiment of the present invention.

Fig. 6 shows the OLED equipment 610 of structure according to an embodiment of the present invention.

Fig. 7 shows a technology that is used to form according to embodiments of the present invention the luminaire of that integrated VSD material.

Fig. 8 A-Fig. 8 E shows according to one or more embodiments of the present invention, is used to form the process of LED equipment.

Embodiment

Embodiment described herein provides the application of voltage variable dielectric material (VSD) as the part of luminous component, and this luminous component comprises LED and OLED.The VSD material can be provided as the part of encapsulation, or with the electric parts of this class luminaire with element is integrated or combination.Provide as one or more embodiment; the integrated impact of protecting luminaire to avoid the voltage transient such as static discharge (ESD) and electric over-stress (EOS) of VSD material, and the harm of avoiding humidity, impact and other electricity or machinery.

Embodiment also comprises device design and the technology of avoiding (comprising LED and OLED) esd event for the protection of ray structure.Particularly, one or more embodiments provide the VSD material are used for esd event is covered outside LED or OLED.

As used herein, " voltage variable material " or " VSD material " is any combination with composition or composition of following feature, wherein said being characterized as: material is dielectric or nonconducting always, unless this material is applied a voltage that surpasses the material characteristics voltage levvl, in the rear situation, material becomes conduction.Therefore, the VSD material is dielectric, unless there is a voltage (for example, being caused by esd event) that surpasses characteristic level to be applied on material, in this case, the VSD material conducts electricity.The VSD material can also be characterized as being any material that can be characterized as being the nonlinear resistance material.

There are various VSDM.Such as United States Patent (USP) 4,977,357, United States Patent (USP) 5,068,634, United States Patent (USP) 5,099,380, United States Patent (USP) 5,142,263, United States Patent (USP) 5,189,387, United States Patent (USP) 5,248,517, United States Patent (USP) 5, the document of 807,509, WO 96/02924 and WO 97/26665 and so on has provided the example of voltage variable dielectric material.In one embodiment, the VSDM material is corresponding to the material of " SURGX " manufacturing under trade (brand) name.

One or more embodiments provide the application to following VSD material, and described VSD material comprises the insulator of 30-80%, the conductor of 0.1-70% and the semiconductor of 0-70%.Insulating material includes but not limited to organosilicon polymer, epoxy, polyimides, polyethylene, polypropylene, polyphenylene oxide, polysulfones, sol gel film, creamer (creamer), silicon dioxide, aluminium oxide, zirconia and other metal oxide insulators.The example of electric conducting material comprises metal, as copper, aluminium, nickel, stainless steel.Semi-conducting material comprises organic and inorganic semiconductor.Some inorganic semiconductors comprise silicon, carborundum, boron nitride, aluminium nitride, nickel oxide, zinc oxide, zinc sulphide.The organic semi-conductor example comprises poly-3-hexyl thiophene, pentacene, perylene, carbon nano-tube and C60 fullerene.Concrete formula and composition can be chosen to make it to be best suited for the special applications of VSD material.

In addition, one or more embodiments are held the VSD material in the rebasing substrate or plate that is placed with luminaire thereon.The VSD material can also be applied in the substrate of an equipment that is used to form subsequently some or all of remainders.Can utilize the ion deposition technique such as electroplating to form conducting element in substrate, and the VSD material is in conduction state.Must be optionally to the placement of conducting element and structure, be provided to, use or cover conducting element in luminaire in order to hold electricity lead-in wire, terminal (namely inputing or outputing) and other.

And one or more embodiments have provided, and the VSD material is integrated or brings in shell, in the intermediate layer, perhaps is integrated or is connected on luminaire with some other forms.

In addition, one or more embodiments give, and are being used for forming the conducting element of luminaire and plating or other ion deposition processes use VSD material of parts in substrate.In one embodiment, the substrate of formation has comprised one deck VSD material.One deck has the material of resist to be provided on the VSD material layer.This erosion resistant is optionally removed to form a pattern, some zones in the resist layer of wherein having exposed, these area identifications those will be in the following position, place of those conducting elements that will form luminaire.In one embodiment, pattern can be corresponding to lower one or more: the electricity lead-in wire (lead) and/or the terminal that (i) enter or pass luminous component, electric interconnects part in luminous component and substrate between other elements, or the electric interconnects part between luminous component, (ii) other luminous components of semiconductor or equipment.In case pattern forms, apply a voltage that surpasses VSD material characteristics voltage in substrate.Executing the alive while, substrate is exposed under ion deposition, thereby electric conducting material is connected on the VSD material.This place that causes having at least partial pattern in substrate forms the conducting wire.

Various embodiment described herein is applied to the VSD material on LED and OLED equipment, to realize a kind of durable, the megatechnics that can make and/or construct the LED/OLED equipment with inherent esd protection.For example for the LED of high brightness, traditional method is suffering not can do with esd event always, and this perplexs, at least do not implement those costlinesses and/or effect can to measure under the scheme of title be such.On the contrary, embodiment described herein can the VSD material to the large-scale application of LED and OLED equipment, in order to the inherence protection of antagonism esd event is provided.And, as described for the embodiment of Fig. 7 and Fig. 8 A-8E, the VSD material can be included in LED equipment and substrate in, improving and to promote the manufacturing of this equipment, and provide simultaneously inherent esd protection.

Blanket

Fig. 1 is according to embodiments of the present invention, is constructed to receive or the block diagram of the luminaire of integrated VSD material.Equipment 100 comprises a luminous component, and this luminous component is carried to outlet terminal 114 with electric current from an input terminal 112.The electric current that passes parts 110 causes the generation of light.Parts 110 can be comprised of different materials and/or structure.For example, in the LED situation, parts 110 can be comprised of in numerous possible semi-conducting materials.And on the other hand, OLED can be comprised of organic material, and this organic material comprises polymer.Luminous component 110 also can comprise the parts of other types.For example, one or more embodiments described herein also can be embodied on filament, and this filament is formed by special material, and when electric current passed, this special material " was lighted " light that has peculiar spectrum to send.

According to, for example, the structure of the type of material therefor and/or parts 110, the spectrum of the light of emission may change.In the situation that luminous component is LED, the light of emission may comprise from visible spectrum (as, white light, blue light, green glow, ruddiness and gold-tinted), perhaps from the invisible spectrum light of (as, infrared and near ultraviolet).

No matter how be used for the material type of luminous component 110 and structure, embodiment described herein can make equipment do as a wholely can resist better transient voltage and event because of including in of VSD material.

For forming device 100, luminous component 110 may be provided in one of various optional environment.In one embodiment, luminous component 110 is arranged in an optional substrate 122 or on other platforms, is arranged on or is arranged on this suprabasil equipment and conducting element is connected to other with equipment 100.As alternative or additional feature, one or more embodiments provide to be brought luminous component 110 in box 124 into.Some structures (comprising film or substrate 124) can attach to luminous component 110 on box 124, and box 124 can be translucent or comprise translucent portion.As another variant, luminous component 110 may be provided in absolute construction, for example, embodiment as Fig. 3 is described, luminaire 100 can be the LED form, and comprise the electricity lead-in wire that those begin to extend from the I/O terminal 112,114 of LED, so that LED can be by surface-assembled to substrate.Alternately, luminous component 110 can be provided as the part of substrate, and can comprise miscellaneous part.

For the embodiment of Fig. 1, position 132-140 has represented that the VSD material is integrated into the place in equipment 100.Because position 132-140 is other similar position or regional expression on equipment, therefore the discussion of given independent position 132-134 also is applicable to a class by the place of this positional representation.According to an embodiment, the VSD material can be arranged on the place that is represented by position 132 on equipment 100.In this place, the VSD material can with extend to conductive channels 116 and 118 (for example circuit (trace), lead frame) combination in

terminal

112 and 114 or integrated.In yet another embodiment, the VSD material can with terminal 112,114 in one or two combination or integrated, as represented in position 134.Substitute or further change as one, the VSD material may be provided on equipment on 100 the place by position 136 expressions.In this place, the VSD material can be combined or be integrated into (interior) on luminous component 110.

Integrated or be combined to the embodiment of electricity component and parts for those VSD materials, alternatively or additionally, one or more embodiments provide the VSD material to be integrated or to be combined to mechanical part or the aspect of equipment 100.Position 138 expression has comprised on the box 124 of the equipment that is applied to 100 or as the VSD material of box 124 parts.In one embodiment, the composition of VSD material can have this material required mechanical property when using (for example rigidity, flexibility) in box 124.Therefore, for example, the VSD material can form the part of the shell of encapsulating light emitting parts 120.Alternately, the VSD material can be included into that equipment 100 is attached in structure on box 124.

Except using box 124, alternately or additionally, equipment 100 can be installed in substrate 122.In one embodiment, substrate 122 can be included the equipment as a larger system part in, as the part on those printed circuit board (PCB)s or motherboard.Substrate 122 can less, and for example have and can independently place individual equipment 100, or the size of a row like device 100.Position 140 expressions are applied to the VSD material place that those cover substrate 122.As described to one or more other embodiments, it can be to form the part of this manufacture process of electricity component in substrate that the VSD material is applied in substrate.

As described to Fig. 1 embodiment, the setting position of VSD material on equipment 100 can change.Consideration to the place of placing the VSD material is based on some factors, and these factors comprise: (i) quantity of the required VSD material that will use; (ii) mechanical property of composition therefor and quality; (iii) include the easness of this assembling of VSD material in; And the medium or the application that (iv) are used for luminaire.For example, as described to the embodiment of Fig. 8 A-8E, advantageously with the part of VSD material as electroplating technology, to form other conducting elements of electricity lead-in wire, contact, through hole (vias) and circuit board.In this case, can pre-determine and be formed for the place of terminal 112,114 or electricity lead-in wire 116,118 by that technique that relies on the VSD material, form these terminals and electricity lead-in wire on circuit board.By this technique, the VSD material can be integrated with terminal 112,114 or electricity lead-in wire 116,118.For example, the VSD material can be positioned at below the conducting wire, this conducting wire or and terminal 112,114 correspondences, or and the lead-in wire 116,118 correspondences.

Light-emitting diode

According to embodiment described herein, light-emitting diode be a kind of can be integrated or receive the luminaire of VSD material.This part shows integrated according to embodiments of the present invention or receives the difference of light-emitting diode of VSD material and implements.

Fig. 2 is according to an embodiment of the invention, is configured to comprise the rough schematic view of the light-emitting diode of VSD material.In the embodiment of Fig. 2, LED 210 can be arranged in any one various environment or structure in.In one embodiment, LED parts 210 can be complete set of equipments (for example having translucent shell), perhaps alternately, are the parts (for example chip) of luminaire.LED parts 210 can be corresponding to integrated circuit (IC) chip, and this integrated circuit (IC) chip is formed by semi-conducting material, comprises substrate and a plurality of semiconducting compound thick layer of doping.The concrete material that is used for LED comprises silicon, GaAs, gallium phosphide, gallium aluminum arsenide, carborundum, sapphire, diamond, zinc selenide, aluminium nitride and InGaN.

In one embodiment, LED parts 210 are formed at received current 215 under normal operating condition (" normal current 215 ") and provide voltage 116. when by current activation, LED parts 210 are luminous, and this light has the wavelength characteristic that determines that forms by the LED parts.

In one embodiment, the VSD material is arranged on the substrate 220 of supporting LED parts 210 or other below structure, perhaps becomes the part of this substrate or structure.For example, LED parts 210 can be installed in the substrate of a plurality of elements of connection, and these a plurality of elements comprise LED parts 210.Under normal operation, substrate 220 has dielectric property, thereby normal current 215 and voltage supply 216 are not stoped.Yet if surge voltage (or transient state) generates and surpass the character voltage level of VSD material, the VSD material transitions of substrate is to conduction state.Under conduction state, the VSD material provides ground connection for the current flowing that causes.Surge voltage 230 has been subject to the impact of the ground connection effect of the VSD material in substrate 220.The surge voltage that causes voltage source 230 can be any above voltage of character voltage level that is applied to or is integrated into the VSD material in substrate 220.

For any other embodiment, any one that the VSD material can be by quantity, concentration, place, thickness or in forming or a plurality of character voltage that is configured to have suitable application-specific.Therefore, for example, the character voltage of VSD material can be selected as the puncture voltage lower than LED parts 210, in order to the LED parts can not damaged in any esd event.

Fig. 3 shows according to one or more embodiments of the present invention, has been constructed to comprise the LED equipment of VSD material.In one embodiment, LED equipment 310 is complete, so as its be installed in substrate or on other equipment to throw light on.LED equipment 310 comprises semiconductor device 320, shell 220 and electricity lead-in wire 312 and 314.Electricity lead-in

wire

312 and 314 provides negative and positive terminal, so that electric current flows through from parts 320.In one embodiment, the VSD material is provided with the form of the structure 350 that is connected to extend between electricity lead-in wire 312.

In one embodiment, the amount of the VSD material in structure 350 is relatively less, provides relatively little support structure in order to construct 350.In yet another embodiment, VSD has comprised sufficient quality in the amount of structure in 350, in order to provide support for those are in electricity in sticking

position

312 and 314 ends that went between.

Under normal operation, the structure 350 of VSD material can provide insulation and member for the electricity lead-in wire.When having the transient voltage of a character voltage level that surpasses VSD composition used, structure 350 is conduction state from the dielectric state transformation.In this case, structure 350 provides the conductive path between electricity lead-in wire 312 and 314.Its effect is with LED310 ground connection when transient voltage occurs.

VSD material structure 350 can, based on composition and/or the amount of VSD material used, and comprise one lower than the character voltage level of LED Whole Equipment puncture voltage.Like this, existing of transient voltage lessly may be damaged LED equipment 310.

Fig. 4 shows according to of the present invention and is installed to one and receives the rebasing substrate of VSD material or the LED equipment on platform.In one embodiment, equipment 400 comprises a LED equipment 410 of installing or being connected in rebasing substrate 420.This LED equipment 410 comprises semiconductor device, and this semiconductor device is for example provided by integrated circuit (IC) chip.One deck VSD material (VSD layer 415) is arranged on LED equipment 410 following (for example, below chip).

Under normal operation, VSDM layer 415 is dielectrics, and can not affect the operation of LED equipment 410.When ESD or the generation of other electricity events, VSD layer 415 imports the electric current that this event causes in ground.

Fig. 5 shows another embodiment, and wherein, one or more LED equipment are installed in a rebasing substrate or other multicomponent platforms of receiving the VSD material according to an embodiment of the present invention.In the embodiment of Fig. 5, substrate 510 comprises a plurality of parts 512, comprises one or more LED equipment 514.As one or more other are implemented to describe, substrate 510 can have one deck VSD material (" VSD layer 520 ").As what the embodiment of Fig. 8 A-8E was described, VSD layer 520 can be added in the step that forms other electricity components, and other electricity components comprise circuit element and the circuit that those are integrally combined with VSD material 520.

Alternately, can be independent of the formation of other electric components in substrate 510 the VSD material is provided.For example, the VSD material can be independent of the formation of circuit element and be provided in substrate, but with a kind of VSD material that can make, the mode of those equipment grounds is couple on LED equipment.

OLED equipment with VSD material

One or more embodiments are included the VSD material or be integrated on OLED equipment.According to an embodiment, OLED equipment is coupled on the VSD material, and when existing over the transient voltage of OLED operating provisions and other improper electricity events with box lunch, the VCD material can be with electric current diversion OLED equipment.

Fig. 6 shows the OLED equipment 610 of structure according to an embodiment of the present invention.This OLED equipment 610 can comprise multiple combination together, luminous layer when electric current flows through this equipment.In one embodiment, equipment 610 comprises the lamination of some thick layer or some layers.In such lamination, the first transparent conductor 614 provides positive pole terminal on an end of lamination, and the second conductor 615 provides a cathode terminal on the other end of lamination.This lamination comprises the polymeric layer 616 of one or more conductions, comprises and the conductive polymer coating of the first conductor 614 (anode) placed adjacent and and the second conductive polymer coating of the second conductor 615 (negative electrode) placed adjacent.Organic emitter 620 can be placed between organic polymer layers 616.Driving 608 can be couple on lamination, and together with control and the utilization of voltage difference 602 realizations that apply to emitter 620.According to the method for routine, the electric current that is caused by the voltage difference 602 that applies impels organic emitter 620 luminous.

In one embodiment, VSD material layer 620 is connected to driver 608. when the electric current that runs into from unexpected source (for example esd event), and this VSD material provides ground connection.With accessed or import OLED 610 by contrast by driver 608, VSD becomes conduction, it with OLED equipment 610 ground connection with to antisurge.Can construct, design or select the VSD material, so that it has character voltage level lower than OLED equipment 610 puncture voltages (under this voltage, the VSD material transitions becomes conduction), so as this VSD material equipment is breakdown become before maybe can not operating conduction and with equipment ground.

Formation with the equipment of VSD material

Fig. 7 shows a technology that is used to form according to embodiments of the present invention the luminaire of that integrated VSD material.Method can be used to form the equipment such as LED or other luminous components as described in Figure 7, comprises that those can be installed in plate or substrate, the equipment that has interconnecting property with miscellaneous part.

Following document description use the VSD material to electroplate or form the current techique of circuit and parts: the U.S. Patent application 10/941 of submitting on September 14th, 2004,226, name is called " Current Carrying Structure Using Voltage SwitchableDielectric Material ", and Lex Kosowsky is unique inventor; Above-mentioned application is United States Patent (USP) 6,797,145 (formal Application No. is 10/315,496) continuation application, this United States Patent (USP) was submitted on December 9th, 2002, name is called " Current CarryingStructure Using Voltage Switchable Dielectric Material ", and LexKosowsky is unique inventor; Above-mentioned application is again the continuation application of U.S. Patent application 09/437,882, and this application was submitted to November 10 in 1999, now abandoned; The priority of above-mentioned application requirement U.S. Provisional Application 60/151,188, this application was submitted on August 27th, 1999, and is now expired.All aforementioned application are included respectively in this paper according to purposes separately.

According to step 710, the VSD material is applied in the substrate or surface that conductive component and element remain to be provided thereon.May be deposited to the amount of suprabasil VSD material, according to the application of described technique, thickness range is between 1 micron to 1000 microns.

In step 720, the non-conducting material layer is provided on the VSD material.For example, can deposit photo-induced corrosion resistant material on the VSD material.

Step 730 provides non-conductive layer to be molded in substrate.Described molding process some zones of having exposed, these zones in position and subsequently the formation part of conductor element overlap, and these conductor elements will comprise the part of the electricity component that remains to be included in luminous component.For example, this is molded can optionally specify some exposure areas, these exposure areas and be used for the electricity lead-in wire of luminous component or the formation position of terminal overlaps.In one embodiment, can be to the non-conductive layer using mask, in order to carry out molded to this layer.

For the described luminaire of one or more other embodiments, the zone that is exposed can coincide with those and will be provided for leading to or from the place of the circuit of electricity lead-in wire, terminal or the Connection Element of luminaire.Yet as described to Fig. 3 embodiment, the VSD material for example can extend between the electricity lead-in wire of luminous component.Correspondingly, molding process can also expose the VSD material in order to later in the situation that without the use of extra conductor material or circuit.Like this, molded those VSD materials that can expose zone that will be exposed.

In step 740, the VSD material is triggered or is transformed into conduction state from the dielectric state.Can apply a voltage that surpasses the material characteristics voltage levvl to this VSD material.This voltage can be applied on the thick layer that comprises the VSD material, or is applied to the base part that is positioned at below the VSD material.In a rear situation, being positioned at the following base part of VSD material can be (for example being formed by copper or other metals) of conduction, with the Portable belt electric charge to the VSD material.May wish in some cases to apply voltage on conductive substrates, so that the linear conductance of avoiding the VSD material to form on the substrate direction.The voltage that applies can be stable (for example " DC ") or pulsed.

Be the time marquis of conduction at the VSD material, step 750 provides execution ion deposition process, to form conducting element (for example circuit) in the exposure area of pattern.Any one in a lot of techniques can be used to ionic medium is deposited to the exposure area that at least some are limited by the non-conductive layer pattern.In one embodiment, carry out electroplating process, in this process, be immersed in electrolyte with the substrate of VSD material and patterning photo-induced corrosion resistant material.

The enforcement of property is as an alternative carried out ion deposition with powder coating and their application technique.In this process, powder particle is with upper electric charge.The application of this powder can realize by powder deposition is immersed in the powder pond to the exposure area or with substrate.

Further, another embodiment can be used electron spray technique.Ionic medium can be included in solution with the form of charged particle.This solution can be applied in substrate when the VSD material is conduction.The application of this spraying can comprise the use to prepared Chinese ink or coating.

Other deposition techniques also can be used for carrying out the deposition on the VSD material when the VSD material is in conduction state.For example, such as physical vapour deposition (PVD) (PVD) or chemical vapour deposition (CVD) (CVD) equal vacuum depositing operation.In PVD, metal ion be introduced in the chamber with the gas Ar ion mixing.Can make to be positioned at suprabasil VSD material for what conduct electricity, have positive charge, so that the ion in absorption and binding cavity.In CVD, can apply the skim ionic material to the VSD material on substrate surface.

In step 760, non-conducting material is selectively removed from substrate, thereby stayed formed conducting element.In one embodiment, end liquid (for example KOH) or water are applied in substrate, to remove photo-induced corrosion resistant material.Conducting element can be placed and used to make the various parts of substrate and/or zone interconnect and/or they are connected to the element of luminaire corresponding to electricity lead-in wire, circuit and other.

After removing the photo-induced corrosion resistant material layer, one or more embodiments provide the step of the substrate that is formed with electricity component being carried out polishing.In one embodiment, used chemico-mechanical polishing to come the polishing substrate.

The substrate of gained has comprised those and has possessed the electricity component of the ability of inherent reply EOS event.For luminaire and comprised the substrate of luminaire and other equipment, the circuit element of the terminal that can utilize the described process of Fig. 7 to form to have comprised luminaire and electricity lead-in wire, and the interconnect component of miscellaneous part on comprising other electricity components and being connected substrate.In one embodiment, for example, form substrate, will be installed to pre-position on plate such as microchip, memory unit and other equipment, the pattern of these precalculated positions and conductor part and element overlaps.

Fig. 8 A-Fig. 8 E shows according to one or more embodiments of the present invention, is used to form the process of LED equipment.In order to make electric component and the element of VSD material and LED equipment, perhaps be formed integrally as with the substrate that is loaded with LED (" LED substrate "), can carry out the described process as Fig. 8 A-Fig. 8 E.The LED substrate can be used for the LED that a single led equipment, LED equipment array or combination have other electric components and element.In a rear situation, for example, LED can provide for the parts on circuit board a status indicator lamp.Fig. 8 A-8E shows one according to embodiments of the present invention, wherein the embodiment of luminous component 855 and various miscellaneous part or Connection Element combination.

As one of other advantages, the formation of the equipment such as the electric component of LED or LED substrate or element has been simplified in the use of VSD material, simultaneously, makes them have the inherent ability that can tackle EOS or esd event.Particularly, the VSD material is integrated into makes the VSD material in the electric component of LED substrate (as when esd event occurs) can be with equipment ground when transient voltage occurring.

In a step shown in Fig. 8 A, substrate 810 is formed and comprises VSD material 812. in one embodiment, and VSD material 812 is deposited as the layer that covers in rebasing substrate 808.

Subsequently, Fig. 8 B shows a step, and in this step, non-conductive layer 820 is deposited in substrate 810.Non-conductive layer 820 may corresponding to, for example, photo-induced corrosion resistant material.

In the step shown in Fig. 8 C, non-conductive layer is molded, the zone 830 that is exposed with formation.As the result of described forming process, the pattern of gained will be arranged on the pattern of the suprabasil conducting element of LED and parts corresponding to those.

In the described step of Fig. 8 D, conductivity type element 840 is formed on zone 440, and described zone is limited by the pattern in the step that is formed at Fig. 4 C.According to an embodiment, a voltage that surpasses the character voltage of VSD material 812 is applied in substrate 810.Applying of voltage causes VSD material 812 from the dielectric state transformation to conduction state.In case VSD material 812 becomes conduction applying under voltage, ionic medium is deposited over the exposed areas that is limited by pattern, to form electricity component and parts.

In one embodiment, the ionic medium deposition is carried out by electroplating technology.In electroplating technology, substrate 810 is dipped into electrolyte, in this electrolyte, from the ionic medium of solution in the exposed region that pattern limits and VSD material (this VSD material is in conduction state) combination.The result of this step is, electric conducting material 840 is formed in substrate 810, VSD material 812 be positioned at conducting element or parts below, described conducting element or parts go out to be obtained from the formation of electric conducting material 840.

Still as described, voltage used can be stable or pulsed.

Can carry out alternative ionic medium depositing operation.For example, as Fig. 7 embodiment is described, can utilize powder coating and their application technique charged powder particle to be deposited to the exposed region that is limited by pattern.Alternately, electron spray can be in conjunction with the ionic medium in liquid, and electricity material is formed in the exposed region that pattern limits.And, can use other technologies, comprise any described gas phase deposition technology when Fig. 7 is implemented do to describe.

In the step of Fig. 8 E, non-conductive layer 820 is removed, and polishing or reduce suprabasil conducting element 840 is to form some or all of circuits, electricity lead-in wire and LED substrate parts.Need to keep in the application of non-conductive layer 820 at some, non-conductive layer 820 can be removed.

Fig. 8 E shows the parts of LED substrate and element and how forms as the result of description process.In one embodiment, VSD material 812 and circuit element are integrated and be positioned under circuit element, this circuit element is for example, (i) the positive and negative terminal of luminous component 855, (ii) lead to or from the electricity of terminal lead-in wire, (iii) be connected to the miscellaneous part of LED substrate and the Connection Element of element.One or more embodiments can also provide VSD material 812 is positioned at below circuit element, for example be positioned at substrate dynamic structure 865 (battery for example, or the electricity of leading to battery or power supply receiver goes between) below, perhaps for example be positioned at those LED is connected to below the circuit element of other parts that remain to be powered.

Embodiment as described in Fig. 8 A-8E can realize preparation electric component and element in the LED substrate that covers the VSD material.By this way, the LED substrate has possessed the ability of the inherent transient voltage ground connection that ESD or EOS etc. can be caused.And than more common technology, this LED substrate can be prepared from manufacturing step still less.

One or more embodiments make the LED substrate comprise the LED element arrays, and these array components can be designed to be independent of substrate, and can use separately, perhaps are used in combination with other LED.

Although as the application that the VSD material has been described in embodiment and other places in the application of Fig. 8 A-8E description, one or more embodiments provide the VSD material of different compositions and formula in single led suprabasil application.For example, the application of VSD material 812 in substrate (Fig. 8 A) can comprise the application to a plurality of VSD materials, and each has different the composition.The design that this can realize LED or LED substrate can utilize to have the machinery that is best suited for particular electrical parts or element or the VSD material of electrology characteristic.

Although Fig. 8 A-Fig. 8 E is very targetedly for the preparation of LED or LED substrate, can be partly by preparing and form such as process described herein at the luminous component described in other embodiments of the application such as those.

And for described any embodiment, the LED substrate can be multidimensional.The parts that for example are used for the LED substrate can be received in two faces of substrate, and by using one or more through holes to link together conductively.The preparation of conductive vias can be carried out with any traditional method.Alternately, one or more embodiments provide as follows as shown in the embodiment of Fig. 8 A-8E, form through hole in substrate: (i) bore or form a hole 809, this hole extends through substrate 808 (Fig. 8 A); (ii) when applying the VSD material, the VSD material is extended in through hole 809; (iii) when molded photo-induced corrosion resistant material, form pattern, be used for making the conducting wire element extend to the path on the border in hole 809 thereby form one, (iv) carry out ion deposition so that be coated with electric conducting material on this through-hole surfaces, it forms conductivity or exercisable through hole 819; And (v) repeating said steps to include electricity component and parts on the opposite face of substrate.Use process that the VSD material forms the through hole 419 of electroplating at United States Patent (USP) 6,797, have a detailed description in 145, the application includes it in by the mode of quoting.

Except the substrate of two faces, through hole can extend to conductivity a plurality of conductive layers, to obtain the appropriate substrate of design.For example, some substrates comprise that those contain the interior thickness layer of electric component and element.Through hole can extend to connect this interior thickness layer that is embedded in the whole thick layer of substrate.By this way, the LED substrate can contain the LED that conductivity connects on different planes or surface, and and the interconnective parts of LED or element.

Sum up

The embodiment that is described with reference to the accompanying drawings is considered to exemplary, the desired details that should not be limited to this exemplary of applicant.Can carry out various modifications and variations to described embodiment, comprise that the feature with independent description in different exemplary combines.Correspondingly, scope of the present invention is intended to be limited by following claim.And, as being contemplated that, describe separately herein otherwise as the specific characteristic of an embodiment part can with the part combination of other features of describing separately or other embodiments, even other features and embodiment are not mentioned this specific characteristic.

Claims

1. luminaire comprises:

One is passed through delivering electric current and luminous parts between first terminal and the second terminal at least, and wherein said parts are formed by semi-conducting material;

A kind of voltage variable dielectric (VSD) material, this VSD material is constructed to have such characteristic: (i) insulate when the voltage of the character voltage level that does not surpass the VSD material, and (ii) conduct electricity when the voltage that applies over this character voltage level;

Wherein said VSD material is the composition based on organic polymer with following feature; And

Wherein said VSD material be set to following in any one or a plurality of the contact: (i) semi-conducting material of described parts, the (ii) first terminal of described parts, (iii) the second terminal of described parts, the first lead-in wire that (iv) extends from first terminal, or (the second lead-in wire that v) extends from the second terminal, to provide ground connection to these parts, resist any transient voltage that surpasses the character voltage level of this VSD material.

2. according to claim 1 equipment, wherein, described parts are diodes.

3. according to claim 1 equipment, wherein said VSD material and go between with the first lead-in wire and second and contact between the first lead-in wire and the second lead-in wire.

4. according to claim 1 equipment, wherein, described parts are arranged in substrate, and wherein said VSD material is arranged in substrate.

5. according to claim 1 equipment, wherein, described parts are formed by organic polymer.

6. according to claim 1 equipment, wherein, described VSD material also is provided in substrate, with be arranged in following any one or a plurality of under: (i) the described parts that formed by semi-conducting material, the (ii) first terminal of described parts, (iii) the second terminal of described parts, (iv) first of first terminal go between, and perhaps (v) second of the second terminal goes between.

7. according to claim 1 equipment, wherein said equipment has the feature puncture voltage, this feature puncture voltage can cause the minimum voltage value of described device damage when being applied on described parts, and the character voltage value of wherein said VSD material is lower than this feature puncture voltage.

8. luminaire comprises:

A semiconductor device, this semiconductor device is configured to when it is applied electric current luminous;

A kind of voltage variable dielectric (VSD) material that is coupled to this semiconductor device, wherein, this VSD material is configured to have such characteristic: (i) insulate when the voltage of the character voltage level that does not surpass the VSD material, and (ii) conduct electricity when the voltage that applies over this character voltage level;

Wherein said VSD material be set to following in any one or a plurality of the contact: (i) described semiconductor device, the (ii) first terminal of described semiconductor device, (iii) the second terminal of described semiconductor device, the first lead-in wire that (iv) extends from first terminal, or (the second lead-in wire that v) extends from the second terminal, when being conduction with convenient VSD material, with electric current diversion semiconductor.

9. according to claim 8 equipment, wherein, described semiconductor device is diode.

10. according to claim 8 equipment, wherein, described equipment has the feature puncture voltage, and this feature puncture voltage can cause the minimum voltage value of described device damage when being applied on described parts, and wherein the character voltage value of this VSD material lower than this feature puncture voltage.

11. equipment according to claim 8, wherein, described VSD material is applied in the substrate mounted thereto of described semiconductor device.

12. equipment according to claim 11, wherein, described VSD material is used for described semiconductor device is attached in substrate.

13. equipment according to claim 8, wherein, described semiconductor device comprises first terminal and the second terminal, and one or two in wherein said VSD material and first terminal and the second terminal electrically contacts.

14. equipment according to claim 13, wherein, described VSD material extends at the first lead-in wire that extends from first terminal with between the second lead-in wire of the second terminal extension, and contacts with them.

15. equipment according to claim 8, wherein, this equipment also comprises a box, and wherein said VSD material and box also be provided, or is set up the part as box.

16. a luminaire comprises:

A lamination that has comprised a plurality of layers, described a plurality of layers comprise organic emitter layer;

A kind of voltage variable dielectric (VSD) material that is couple to this lamination, wherein this VSD material is placed with and has following characteristic: (i) insulate when the voltage of the character voltage level that there is no to surpass this VSD material, and (ii) conduct electricity when the voltage that applies over this character voltage level;

Wherein said VSD material be set to following in any one or a plurality of the contact: (i) first terminal of semiconductor device, (ii) the second terminal of semiconductor device, the first lead-in wire that (iii) extends from first terminal, or the second lead-in wire that (iv) extends from the second terminal, when being conduction with this VSD material of box lunch, with the described lamination of electric current diversion.

17. equipment according to claim 16, wherein said lamination comprises positive pole terminal and cathode terminal, applies a voltage difference on positive pole terminal and cathode terminal, and wherein said VSD material is set to and one or two connection of being connected in terminal.

18. equipment according to claim 17, wherein said cathode terminal is arranged on a driver, and wherein said VSD material is positioned under this driver, and become be conduction in the described lamination of electric current diversion.