CN101578708A - 太阳能电池装置的柱状结构薄膜材料 - Google Patents

太阳能电池装置的柱状结构薄膜材料 Download PDF

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CN101578708A
CN101578708A CNA2008800016233A CN200880001623A CN101578708A CN 101578708 A CN101578708 A CN 101578708A CN A2008800016233 A CNA2008800016233 A CN A2008800016233A CN 200880001623 A CN200880001623 A CN 200880001623A CN 101578708 A CN101578708 A CN 101578708A
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霍华德·W·H·李
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Abstract

一种太阳能电池装置的薄膜材料结构，所述薄膜材料结构包括具有多种单晶结构的材料层，每种单晶结构配置为柱状物。所述柱状物的尺寸范围为大约0.01微米到大约10微米且具有第一端与第二端的特征。所述材料层具有光吸收系数的特征，所述光吸收系数在大约400纳米到大约750纳米的波长范围内对光的吸收大于104cm－1。

Description

太阳能电池装置的柱状结构薄膜材料
相关申请的相互参考
本申请在美国申请了优先权，临时专利申请号为No.60/976,392，申请日为2007年9月28日；发明专利申请号为No.12/237,371，申请日为2008年9月24日。本申请通常是指这两份申请，并为所有目的共同引用。
联邦政府资助研究或开发下发明权的声明  不适用
参考“序列表”，表格，或光盘提交的计算机程序列表附件  不适用
背景技术
本发明涉及太阳能电池材料，具体涉及一种采用薄膜工艺制作太阳能发电材料的方法和结构，其中薄膜由氧化铜等金属氧化物制成。已通过单结配置实施了该方法和结构，这仅是一个例子，但本发明还可能有其它配置，例如粒状材料。
从开始以来，人类就一直面临着找到利用能源方法的挑战。能源可分为石化能源、水能、原子能、风能、生物能、太阳能，以及包括木材，煤等占多数的原始型能源。上个世纪，现代文明已依赖于作为重要能源的石化能源。石化能源包括天然气和石油。天然气包括丁烷和丙烷等较轻形式的气体，通常用于家庭取暖和烹饪的燃料。石油包括汽油、柴油、喷气燃料等，通常用于运输。较重形式的石化能源在一些地方也可用作家庭取暖。不幸的是，基于地球上可用总量，石化能源有限且本质上不能再生，另外，由于汽车和使用石化产品的增加，石化能源正成为相当稀缺的资源，随着时间的流逝其最终将耗尽。
最近，已迫切需要清洁能源。水力发电就是清洁能源的一个例子，通过修建大型水坝，阻挡水的流动，通过水力驱动发电机发电，如内华达州的胡佛水坝，其所发的电供加利福尼亚州洛杉矶市的大部分地区使用。其它形式的清洁能源包括太阳能。该发明背景以及下面更具体的叙述揭示了太阳能详细情况。
太阳能通常将来自太阳的电磁辐射转换为能源的其它有用形式，包括热能和电力。通常通过太阳能电池来应用太阳能。虽然太阳能清洁且在一定程度获得了成功，其在全世界广泛应用之前仍存在许多缺陷。例如，一种太阳能电池采用结晶材料，该结晶材料由半导体锭构成，这些结晶材料包括将电磁辐射转换为电流的光电二极体装置。结晶材料生产成本高，很难大量生产。另外，采用结晶材料制成的装置能源转换效率低。其它类型的太阳能电池采用薄膜技术，形成薄膜的感光材料，将电磁辐射转换为电流。在利用薄膜技术制作太阳能电池时也存在类似的缺陷，也就是说，效率通常也低。另外，膜的可靠性差，在常规应用环境中使用期限短。本专利说明书以及下面更具体的叙述揭示了这些常规技术的缺陷。
综上所述可以看出，迫切需要生产太阳能电池材料的改进技术及合成装置的技术。
发明概述
根据本发明的实施范例，提供了制作光电池的技术。更具体说，根据本发明的实施范例，提供了一种利用金属氧化物制作薄膜半导体材料的方法和结构。本发明的广泛应用范围将获得认可。
在一个具体实施范例中，提供了一种太阳能电池装置用的薄膜材料结构。所述薄膜材料结构包括一材料层。所述材料层包括多个单晶结构。在一个具体实施范例中，每种单晶结构配置成柱状物，每个柱状物具有第一端与第二端，以及一连接所述第一端与第二端的侧向区域。在具体实施范例中，所述第一端与第二端的尺寸范围为大约0.01微米到大约10微米，但可能也有其它范围。所述材料层具有光吸收系数的特征，所述光吸收系数在大约400纳米到大约700纳米的波长范围内对光的吸收大于104cm-1。
在一个具体实施范例中，提供了一种形成薄膜材料结构的方法，所述薄膜材料结构用于太阳能电池装置。所述方法包括提供具有表面区域的基板，以及形成覆盖在表面区域的第一电极结构。在一个具体实施范例中，所述方法包括形成覆盖在第一电极结构上的材料层。所述材料层包括多个单晶结构，在一个优选实施范例中，每个单晶结构配置成柱状物。所述柱状物具有第一端与第二端，每一端的范围为大约0.01微米到大约10微米，但可能也有其它范围。材料层的特征在于光吸收，其在大约400纳米到大约700纳米的波长范围内对光的吸收大于104cm-1。
依据实施范例，本发明提供了一种依赖于传统技术的简单工艺，所述传统技术可能以纳米技术为基础。根据一个具体实施范例，通过基于纳米技术的材料与工艺，提高了转换效率并改进了工艺。在一些实施范例中，所述方法在将阳光转换成电能过程中具有较高效率。依据所述实施范例，根据本发明所述的合成太阳能电池效率可为大约10％或20％或更高。另外，所述方法提供了一种与传统工艺技术相兼容并无需对传统设备及工艺进行大量修改的工艺。在一个具体实施范例中，所述方法可用作大规模生产所述结构的技术，从而降低了光电池的生产成本。在另一个实施范例中，也可利用基于溶液的工艺来实现该方法与结构。在一个具体实施范例中，该方法采用了所述工艺及对环境安全的材料。根据所述实施例，可实现一种或多种以上优点。本说明书对这些优点及其它优点会进行详尽的描述，具体见下文。
根据详尽描述及搭配的附图可更加全面的领会本发明各种其它目的、特征及优点。
附图说明
图1为根据本发明实施范例所述的太阳能电池装置简图。
图2-3为根据本发明实施范例所述的太阳能电池装置所采用的薄膜金属氧化物半导体材料结构简图。
图4-9为根据本发明所述的一个实施范例，利用所述的薄膜金属氧化物半导体材料制作太阳能电池装置的示意图。
发明详述
根据本发明所述的实施范例，提供一种制作薄膜金属氧化物半导体材料的技术。更具体的说，根据本发明所述的实施范例提供一种太阳能电池所采用的薄膜金属氧化物半导体材料的制作方法和结构。根据本发明所述实施范例的更广泛的应用范围将获得认可。
图1为根据本发明实施范例所述，利用太阳能电池用薄膜金属氧化物半导体制作的太阳能电池装置结构图。该图仅为一幅简图，并不过度限制本文所述的权利要求。技术人员可识别其它变化、修改和选择形式。如图1所示，提供一基板(101)。所述基板具有表面区域(103)和厚度(105)。所述基板由硅、锗、硅锗化合物以及其它半导体材料制成。或者所述基板可由透明材料制成，如玻璃、石英或聚合材料。所述基板也可能为多层结构材料或粒状材料。当然可能也有其它的变化、修改及选择形式。
如图1所示，提供覆盖在所述基板表面区域的第一电极结构。在一个具体的实施范例中，所述第一电极可由适合的材料或组合材料制成。依据所述实施范例，所述第一电极结构可由透明导电电极或反光或挡光材料制成。所述光学透明导电材料可包括铟锡氧化物(ITO)、铝掺杂的氧化锌、氟掺杂的氧化锡及其它。在一个具体实施范例中，第一电极可由一种金属材料制成。所述金属材料可包括金、银、镍、白金、铝、钨、钼，这些金属的一种组合，或一种合金等。在一个具体实施范例中，所述金属材料可采用溅射、电镀、电化学沉积及其它技术进行沉积。另外，第一电极结构可由碳或石墨等碳基材料构成。或者，根据应用情况，所述第一电极结构可由导电高分子材料构成。当然可能也有其它的变化、修改及选择形式。
在一个具体实施范例中，允许薄膜金属氧化物半导体材料(109)形成在第一电极结构上。如图所示，所述薄膜金属氧化物半导体材料与第一电极结构基本为物理和电接触。本说明书提供了薄膜金属氧化物半导体材料的详细资料，具体见下文。
参考图2，根据一个具体实施范例，薄膜金属氧化物半导体材料包括多个单晶结构(200)。每个单晶结构均可具有某一空间配置。在一个具体实施范例中，所述多个单晶结构均配置成柱状物。如图所示，柱状物包括第一端(202)与第二端(204)。侧向区域(206)连接所述第一端与第二端。第一端与第二端的形状不规则并且基本为圆形。在一个具体实施范例中，如图2所示，利用密集型配置提供每个单晶结构，也就是说，多个单晶结构均在侧向上(208)基本相互平行。图3为薄膜金属氧化物半导体材料的俯视图(300)。当然，可能也有其它变化、修改及选择形式。
在一个具体实例范例中，每个单晶结构均具有空间特征，即，每个单晶结构在一个具体实施范例中可为以纳米为基础的结构。在一个具体实例范例中，每个单晶结构的特征在于直径范围为大约0.01微米到大约10微米，但可能也为其它范围。当然，可能也有其它变化、修改及选择形式。
在一个具体实施范例中，薄膜金属氧化物半导体材料可为铜的氧化物，例如氧化铜或氧化亚铜。在另一实施范例中，薄膜金属氧化物半导体材料可由氧化亚铁，氧化铁等铁的氧化物制成。当然，可能也有其它变化、修改及选择形式。
例如，将氧化铜作为薄膜金属氧化物半导体材料，可利用适当技术或组合技术对氧化铜进行沉积。所述适当技术可包括溅射、电化学沉积、组合技术及其它。在一个具体实施范例中，可利用硫化铜，氯化铜等作为前体，通过电化学沉积方法对氧化铜进行沉积。当然，可能也有其它变化、修改及选择形式。
在一个具体实施范例中，薄膜金属氧化物半导体材料特征在于第一带隙。所述第一带隙的范围为大约1.0eV到大约2.0eV，且最好是在大约1.2eV到大约1.8eV。当然，可能也有其它变化、修改及选择形式。
在一个具体实施范例中，多个单晶结构中的每一个的柱状物都为每一个单晶结构提供晶界区域。根据一个具体实施范例，所述晶界区域可安装二极管装置结构，所述二极管装置结构安装在薄膜金属氧化物半导体材料的每一个单晶结构内。当然，可能也有其它变化、修改及选择形式。
在一个具体实施范例中，薄膜金属氧化物半导体材料具有光吸收系数的特征。在大约400纳米到大约800纳米的波长范围内对光的光吸收系数至少为104cm-1。在另一个实施范例中，所述薄膜金属氧化物半导体材料在450纳米到大约750纳米的波长范围内，对光的光吸收系数至少为104cm-1。当然可能也有其它的变化、修改与选择形式。
回到图1，所述太阳能电池装置结构包括覆盖在薄膜金属氧化物半导体材料上的半导体材料(113)。在一个具体实施范例中，半导体材料具有与薄膜金属氧化物半导体材料杂质特征相反的杂质特征。例如，薄膜金属氧化物半导体材料具有P类杂质特征，半导体材料可具有N类杂质特征。在一个具体实施范例中，薄膜金属氧化物半导体材料可具有p-类杂质特征，半导体材料具有n+类杂质特征。另外，半导体材料的特征在于第二带隙。在一个具体实施范例中，第二带隙大于第一带隙。当然，技术人员将认可其它变化、修改及选择形式。
回到图1，在所述半导体材料上设置一高阻缓冲层(111).如图1所示，第二电极结构(113)设置在所述缓冲层的表面区域上。在一个具体实施范例中，第二电极结构可由适当材料或组合材料构成。根据所述实施范例，第二电极结构还可由透明导电电极，或反光或挡光材料构成。所述光学透明材料可包括铟锡氧化物(ITO)，铝掺杂的氧化锌，氟掺杂的氧化锡及其它。在一个具体实施范例中，第二电极可由金属材料构成。所述金属材料可包括金、银、镍、白金、铝、钨、钼，这些金属的组合，或一种合金等。在一个具体实施范例中，可利用溅射、电镀、电化学沉积等技术对金属材料进行沉积。另外，第二电极结构可由碳或石墨等碳基材料构成，或根据应用情况，第二电极结构可由导电高分子材料制成。当然，可能也有其它变化、修改及选择方式。
图4-9为根据本发明所述的一个实施范例，利用所述的薄膜金属氧化物半导体材料制作太阳能电池装置的示意图。这些图表仅作为例证，不会过分限制本文所述的权利要求。技术人员认可其它变化、修改及选择形式。如图4所示，设置有包括表面区域(404)的基板构件(402)。根据应用情况，所述基板构件可由绝缘体材料、导电材料或半导体材料制成。在一个具体实施范例中，导电材料可为镍、钼、铝、或不锈钢等金属合金。在一个实施范例中，半导体材料可包括硅、锗、硅锗，以及III-V族材料，II-VI材料等化合物半导体材料。在一个具体实施范例中，绝缘体材料可为玻璃、石英、熔融石英等透明材料，或者根据应用情况，绝缘体材料可为高分子材料、陶瓷材料、或单层或复合材料。根据所述实施范例，所述高分子材料可包括丙烯酸材料，聚碳酸酯材料及其它。
参考图5，本方法包括在基板构件表面区域上形成第一导体结构(502)。在一个具体实施范例中，第一电极结构可由适当材料或组合材料构成。依据所述实施范例，第一电极结构可由透明导电电极，或反光或挡光材料构成。光学透明导电材料的实例可包括铟锡氧化物(ITO)、铝掺杂的氧化锌、氟掺杂的氧化锡及其它。可利用溅射或化学气相沉积等技术对透明导电材料进行沉积。在一个具体实施范例中，第一电极可由金属材料制成。所述金属材料可包括金、银、镍、白金、铝、钨、钼，这些金属的组合，或一种合金等。在一个具体实施范例中，可利用溅射、电镀、电化学沉积等技术对金属材料进行沉积。另外，第一电极结构可由碳或石墨等碳基材料构成，或根据应用情况，第一电极结构可由导电高分子材料材料构成。当然，可能也有其它的变化、修改及其它选择方式。
参考图6，所述方法包括形成覆盖在所述第一导电电极结构上的薄膜金属氧化物半导体材料(602)。在一个具体的实施范例中，所述薄膜金属氧化物半导体材料具有P类杂质特征。在一个具体的实施范例中，首选择地，所述薄膜金属氧化物半导体材料具有光吸收系数特征，该光吸收系数在大约400纳米到750纳米的波长范围内大于104cm-1。在一个具体的实施范例中，所述薄膜金属氧化物半导体材料具有大约1.0eV到大约2.0eV的带隙。例如，所述金属氧化物半导体材料可为铜的氧化物(氧化铜，氧化亚铜或其组合物)，其通过电化学方法或化学气相沉积技术进行沉积。当然可能也有其它的变化、修改及选择形式。
在一个具体的实施范例中，如图7所示，所述方法包括形成覆盖在所述吸收层上的半导体材料(702)，其具有N+杂质特征。在一个具体的实施范例中，所述半导体材料包括第二金属氧化物半导体材料。另外，所述N+层包括金属硫化物材料。所述第二金属氧化物材料包括一种或多种铜的氧化物及锌氧化物等等。所述金属硫化物材料包括硫化锌、硫化铁及其它。可用不同形状和尺寸的不同空间形态来提供所述半导体材料。在一个具体实施范例中，所述半导体材料可包括纳米结构的适当材料，如纳米柱、纳米管、纳米棒、纳米晶体及其它。在另一个选择的实施范例中，根据应用情况，也可利用其它形态提供所述N+层，如粒状材料。当然，可能也有其它的变化、修改及选择形式。
参考图8，利用薄膜金属氧化物半导体材料制作太阳能电池装置的方法包括提供覆盖在所述半导体材料的表面区域的缓冲层(801)。在一个具体的实施范例中，所述缓冲层包括适合的高阻材料。当然可能也有其它的变化、修改及选择形式。
如图9所示，所述方法包括形成第二导电层，以形成覆盖在所述缓冲层上的第二电极结构图(902)。在一个具体实施范例中，所述第二电极结构可由一种合适的材料或一种组合材料构成。依据实施范例，所述第二电极结构可由透明导电电极，或反光或挡光材料制成。所述光学透明导电材料可包括铟锡氧化物(ITO)、铝掺杂的氧化锌、氟掺杂的氧化锡及其它。所述光学透明导电材料可采用溅射或化学气相沉积等技术进行沉积。在一个具体实施范围例中，第一电极可由一种金属材料制成。所述金属材料可包括金、银、镍、白金、铝、钨、钼，这些金属的一种组合，或一种合金等。在一个具体实施范例中，所述金属材料可采用溅射、电镀、电化学沉积及其它技术进行沉积。另外，第二电极结构可由碳或石墨等碳基材料构成。或者，根据应用情况，所述第二电极结构可由导电高分子材料构成。当然可能也有其它的变化、修改及选择形式。
此处描述的实例及实施例仅为说明目的，技术人员可进行各种细小的修改或变化，其将包含在申请范围与附加要求范围内。

Claims (35)

1.一种太阳能电池装置的薄膜材料结构，所述薄膜材料结构包括：
具有多种单晶结构的材料层，每种单晶结构配置成柱状物；所述柱状物的特征在于具有尺寸范围为大约0.01微米到大约10微米的第一端与第二端；所述材料层的特征在于对于波长范围在大约400纳米到大约750纳米的光的光吸收系数大于104cm-1。
2.权利要求1所述的薄膜材料结构，其中所述材料层包括金属氧化物。
3.权利要求2所述的薄膜材料，其中所述金属氧化物包括铜的氧化物、氧化锌、氧化铁等。
4.权利要求1所述的薄膜材料结构，其中所述材料层包括金属硫化物。
5.权利要求4所述的薄膜材料结构，其中所述金属硫化物可为Cu2S、FeS、FeS、或SnS。
6.权利要求4所述的薄膜材料结构，其中所述材料层具有范围为大约0.8eV到大约1.3eV的第一带隙。
7.权利要求1所述的薄膜材料结构，其中所述第一端与第二端的形状不规则并且基本为圆形。
8.权利要求1所述的薄膜材料结构，其中所述多个单晶结构基本相互平行。
9.权利要求1所述的薄膜材料结构，其中所述材料层为结晶状。
10.权利要求1所述的薄膜材料结构，其中每一个所述的单晶结构都为二极管装置区域留有安装位置。
11.权利要求1所述的薄膜材料结构，其中所述柱状物均为多个单晶结构提供一晶界区域。
12.权利要求1所述的薄膜材料结构，其中材料层在空间上处于第一电极与第二电极之间。
13.一种太阳能电池用太阳能电池装置结构，所述太阳能电池装置结构包括：
具有表面区域的基板构件；
覆盖在基板构件表面区域上的第一电极结构；
具有P-类杂质特征的材料层，其覆盖在所述第一电板结构上，所述材料层包括多种单晶结构，每一个单晶结构被配置成柱状物；所述柱状物的特征在于具有尺寸范围为大约0.01微米到大约10微米的第一端与第二端；所述材料层的特征在于对于波长范围在大约400纳米到大约750纳米的光的光吸收系数大于104em-1；
具有N+层杂质特征的半导体材料，覆盖在材料层上；
覆盖在所述半导体材料上的高阻缓冲层；
覆盖在所述缓冲层上的第二电极结构。
14.权利要求13所述太阳能电池装置结构，其中所述基板构件为一半导体，例如，硅、锗，以及III-V族的砷化镓、锗、硅锗等复合半导体材料。
15.权利要求13所述太阳能电池装置结构，其中所述基板构件为玻璃、熔融石英、石英等透明基板。
16.权利要求13所述太阳能电池装置结构，其中所述基板构件包含镍、铝、不锈钢等金属。
17.权利要求13所述太阳能电池装置结构，其中所述基板构件包括有机材料，例如聚碳酸酯，丙烯酸材料等。
18.权利要求13所述太阳能电池装置结构，其中所述第一电极结构包括透明导电材料，如铟锡氧化物、氟掺杂的氧化锡、铝掺杂的氧化锌等。
19.权利要求13所述太阳能电池装置结构，其中所述第一电极包括如金、银、白金、镍、铝等金属材料，以及金属合金等复合材料，等等。
20.权利要求13所述太阳能电池装置结构，其中所述第一电极包括有机材料，如导电聚合物材料。
21.权利要求13所述太阳能电池装置结构，其中所述第一电极包括碳基材料，如石墨。
22.权利要求13所述太阳能电池装置结构，其中所述第二电极包括透明导电材料，如铟锡氧化物、氟掺杂的氧化锡、铝掺杂的氧化锌等。
23.权利要求13所述太阳能电池装置结构，其中所述第二电极包括如金、银、白金、镍、铝等金属材料，以及金属合金等复合材料，等等。
24.权利要求13所述太阳能电池装置结构，其中所述第二电极包括有机材料，如导电聚合物等。
25.权利要求13所述太阳能电池装置结构，其中第二电极包括碳基材料，如石墨。
26.权利要求13所述太阳能电池装置结构，其中所述材料层具有范围为大约0.8eV到大约1.3eV的第一带隙。
27.权利要求13所述太阳能电池装置结构，其中所述材料层包括金属氧化物材料，如氧化铜等。
28.权利要求13所述太阳能电池装置结构，其中所述材料层包括金属硫化物材料，例如硫化铁及硫化锌等。
29.权利要求13所述太阳能电池装置结构，其中所述材料层具有P-类杂质特征。
30.权利要求13所述太阳能电池装置结构，其中所述半导体材料具有N+杂质特征。
31.权利要求13所述太阳能电池装置结构，其中所述柱状结构的第一端与第二端的形状不规则并且基本为圆形。
32.权利要求13所述太阳能电池装置结构，其中每个单晶结构都为二极管装置区域留有安装位置。
33.权利要求13所述太阳能电池装置结构，其中所述柱状结构均为多个单晶结构提供晶界区域。
34.权利要求13所述太阳能电池装置结构，其中所述太阳能电池装置的转换效率为大约10％到20％。
35.一种形成太阳能电池装置用薄膜金属结构的方法，所述方法包括：
提供具有表面区域的基板；
制作覆盖在所述表面区域上的第一电极结构；
制作包括多个单晶结构的材料层，所述材料层覆盖在第一电极结构上，每一单晶结构配置成柱状物，所述柱状物的特征在于具有尺寸范围为大约0.01微米到大约10微米的第一端与第二端；所述材料层的特征在于对于波长范围在大约400纳米到大约750纳米的光的光吸收系数大于104cm-1；
制作覆盖在所述材料层上的第二电极结构。
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