CN101568666B - Metal gas supply apparatus and remaining gas removal apparatus used for thin film depositing apparatus and method thereof - Google Patents
Metal gas supply apparatus and remaining gas removal apparatus used for thin film depositing apparatus and method thereof Download PDFInfo
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- CN101568666B CN101568666B CN2007800480685A CN200780048068A CN101568666B CN 101568666 B CN101568666 B CN 101568666B CN 2007800480685 A CN2007800480685 A CN 2007800480685A CN 200780048068 A CN200780048068 A CN 200780048068A CN 101568666 B CN101568666 B CN 101568666B
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Images
Classifications
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
- C23C16/4481—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by evaporation using carrier gas in contact with the source material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4412—Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02C—CAPTURE, STORAGE, SEQUESTRATION OR DISPOSAL OF GREENHOUSE GASES [GHG]
- Y02C20/00—Capture or disposal of greenhouse gases
- Y02C20/30—Capture or disposal of greenhouse gases of perfluorocarbons [PFC], hydrofluorocarbons [HFC] or sulfur hexafluoride [SF6]
Abstract
Disclosed is a thin film deposition apparatus, and particularly, a metal gas supply apparatus for supplying a metal material for forming a thin film and a residual gas removal apparatus for removing residual gas after the thin film deposition, which are provided in the thin film deposition apparatus. The metal gas supply apparatus of the thin film deposition apparatus includes a carrier gas supplyunit for supplying a carrier gas such that a metal material is transferred into a thin film deposition chamber spaced apart by a predetermined interval from a target on which a thin film is to be dep osited; a metal gas generator unit for storing and subliming the metal material such that the metal material is mixed with the carrier gas; a carrier gas injection line, which connects the carrier gassupply unit and the metal gas generator unit, transfers the carrier gas and the metal gas into the chamber, and is provided with a heater for maintaining the carrier gas or the metal gas at a sublima tion temperature of the metal material or higher.
Description
Technical field
The present invention relates to a kind of film deposition apparatus, relate in particular to for film deposition apparatus being provided film forming metallic substance material gas supply device, and at the entrap bubble treatment unit of thin film deposition aftertreatment entrap bubble.
Background technology
Film refers to realize with mechanical workout, thickness is the film below several microns.Here comprise inferior plumbous film, tin film of rust, iron sheet, the pig iron of the oil film of the water surface, film that soap drips cohesion, metallic surface etc., in addition, also having some films (such as metallic film, semiconductor film, insulating film, compound semiconductor film, magneticthin film, thin dielectric film, unicircuit film, superconducting thin film etc.) is to make by the oxidation style take the vacuum deposition method (also can be called the vapour seasoning method) of regulation as main electrochemical plating, gas or liquid, compound thermal decomposition method, means of electron beam deposition, radium-shine light beam sedimentation etc.
When in a single day material became filminess, its physics, chemical property can change greatly.Then have the possibility of being burnt when for example, existing the non-inflammability metal to become filminess.Generally speaking, its viscosity increases and its surface tension reduces, and produces coloring phenomenon because of interference of light.These characteristics are applied to the test of various Physicochemical principles or the making of Physicochemical machinery.
Depositing gold-plated is that object and the metal that will deposit are placed in the vacuum condition, and makes metal be converted into gas phase with the method for heating evaporation, then condenses upon body surface and in its surperficial film forming method.The gold-plated method of this deposition is widely used in comprising in the manufacturing of semiconductor film and the recent flat-panel screens that prevails.
Especially the liquid-crystal display that mostly uses as flat-panel screens, these liquid-crystal displays have utilized optical anisotropy and the polarization characteristic of liquid crystal, and well-known, liquid crystal has: the optical anisotropy that molecular structure is elongated, arrangement has orientation; The polarization property that its molecular arrangement changes according to it is big or small in the time of in being in electric field.Liquid-crystal display is made of liquid crystal panel, it possesses at opposite face and forms respectively a pair of transparent insulation substrate that is produced electric boundary by electrode, and open again betwixt liquid crystal layer, the electric boundary that each electrode is produced applies suitable voltage, change thus electric field, and automatically adjust the oriented of liquid crystal molecule, utilize the transmitance of the light that changes this moment and show various image.
Especially arrange the pixel of the visual fundamental unit that shows with determinant recently and utilize respectively independent their active matrix (active matrix) type liquid crystal indicator of control of switchover element, because its higher sharpness and image display function receive much concern, Here it is uses the Thin Film Transistor (TFT) type liquid crystal indicator of Thin Film Transistor (TFT) by such switching element.
More specifically, consist of one of them gate (gate) door line as a plurality of arrangements that intersect in length and breadth for the electrical wiring of distinguishing pixel of two transparent insulation substrate of this liquid crystal panel, data line, the various integrant high-density such as Thin Film Transistor (TFT) and pixel electrode converge and are mems thin film pattern (pattern) forming array substrate, in another transparent insulation substrate, comprise redness, green, cyan color filter and consist of color filter substrate, these each substrates are that the etching program that repeatedly carries out the thin film deposition of regulation material and be used for composition is made.
Repairing the laser film deposition apparatus is: make after such base plate for liquid crystal display device, proceed to disconnect the wiring pattern of short circuit or connect the repair procedure such as the wiring pattern broken and reduce untoward reaction and increase yield, especially radium-shine light beam is produced the topochemistry vapor deposition reaction as the energy in the employed repair apparatus this moment and connect the device of the wiring pattern of latter's short circuit.
These principles of repairing film deposition apparatus are to have used simply radium-shine local deposits method (laser-induced chemical vapour deposition method), contain under precursor (precursor) atmosphere that deposits target compound and shine radium-shine light beam to the part of substrate, produce the topochemistry vapour deposition in focus, connect the wiring pattern of broken string by the Thinfilm pattern that forms thus.
Such film deposition apparatus needed the large-scale tightness system as vacuum chamber in the past, but nowadays was widely used in accessible repairing film deposition apparatus under the open normal atmosphere.
Such film deposition apparatus comprises: material gas supply device becomes gaseous phase with the metal ingredient of solid state, and provides the unstripped gas of mixing with rare gas element or nitrogen etc. to chamber; Chamber carries out the thin film deposition program at this; Gas barrier is discharged and is formed post-depositional unstripped gas.
The present invention relates to a kind of raw material feed device and gas barrier of above-mentioned film deposition apparatus.
Raw material feed device in the past only provides the function that metallic substance is offered chamber, therefore serves problem to effectively carrying out the thin film deposition band.
And, even do not carry out in the situation of thin film deposition operation also the chamber gas of supplying raw materials, and cause the waste of unstripped gas.
And, there is following problem in material gas supply device in the past: when only injecting transportation gas that metallic substance is provided and carrying out in the thin film deposition operation at chamber, film is deposited to for radium-shine light beam being transmitted to the optical window in the chamber or producing the problem that unstripped gas is leaked.
And there is following problem in gas barrier in the past: the entrap bubble of discharging all is discharged in the atmosphere and causes topsoil, and can't recycle the metallic substance that has the entrap bubble memory body.Especially have following problem: even also can't recycle in the situation of metallic substance for the such high-valency metal of gold, during temperature more than the temperature of comb can not be kept the sublimation point of raw material feed device, unstripped gas again sticks on the comb and blocks comb.
Summary of the invention
The objective of the invention is for addressing the above problem, a kind of film deposition apparatus gas of supplying raw materials that is is provided, and at unstripped gas device and gas inject line well heater (heater) is set, so that metallic substance distils easily and transportation gas is mixed easily.
And, the object of the invention is to, in the raw material feed device well heater is set to the reaction chamber front end, keep the above temperature of sublimation point, and do not allow unstripped gas paste comb.
And, the object of the invention is to, ON/OFF and the flow of valve and flow rate control device adjustment institute injecting gas is set at the gas inject line.
And, the object of the invention is to, be that the reaction chamber front end arranges valve in the end of gas inject line, the unnecessary raw material supplying of blocking-up during carrying out the thin film deposition program and cost reduction.
And, the object of the invention is to, unnecessary deposition when preventing thin film deposition, and prevent that unstripped gas from leaking in the atmosphere and with the split of transportation gas, other provides Purge gas and shielding gas.
And, the object of the invention is to, in entrap bubble, collect metallic substance after the thin film deposition.
And, the object of the invention is to, the valve of the gas of supplying raw materials is supplied with Purge gas, to purify the comb between unstripped gas generating unit and the chamber.
The material gas supply device of film deposition apparatus of the present invention comprises:
The thin film deposition chamber;
The transportation gas supply part with the thin film deposition target compound specific arranged spaced of being separated by, is provided for the transportation gas of transport metal material with chamber to the thin film deposition of deposit film;
The unstripped gas generating unit stores above-mentioned metallic substance, and the above-mentioned metallic substance that distils makes it mix with above-mentioned transportation gas;
Transportation gas inject line, connect above-mentioned transportation gas supply part and unstripped gas generating unit, to transport gas and unstripped gas and be sent to said film deposition chamber, well heater is set so that transportation gas or unstripped gas maintain more than the sublimation point, is provided for blocking the valve of gas inject in the end that is connected with above-mentioned chamber.
And the entrap bubble treatment unit of film deposition apparatus of the present invention comprises:
The thin film deposition chamber;
The metallic substance collection unit is separated by a specific interval with the thin film deposition target compound and is disposed, and is collecting metallic substance the Exhaust Gas of discharging with chamber from the thin film deposition of deposit film;
Pump by the entrap bubble gas relief line that is connected with above-mentioned chamber, extracts the pressure of the entrap bubble in the chamber with regulation.
And the unstripped gas supply method of film deposition apparatus of the present invention comprises: to the said film deposition apparatus gas of supplying raw materials, wherein the said film deposition apparatus comprises: the thin film deposition chamber; The unstripped gas supply unit is separated by a specific interval with the thin film deposition target compound and is disposed, to the thin film deposition of deposit film with the chamber gas of supplying raw materials; The entrap bubble handling part, the entrap bubble that processing is discharged from above-mentioned chamber, it is characterized in that, the unstripped gas supply method of film deposition apparatus comprises: Purge gas, unstripped gas and shielding gas are provided to the stage, Purge gas is used for preventing that the said film deposition from depositing unstripped gas with the optical window in the chamber, shielding gas is used to form invisible door and window and leaks outside with the unstripped gas in the chamber to prevent the said film deposition, and unstripped gas is used for deposit film; Judge whether deposit metal films finishes, and according to its result, continues the gas of supplying raw materials, and perhaps stops the supply of unstripped gas, and be provided for using at the protective membrane of metallic film upper end formation protective membrane or insulating film the operation of gas.
And the entrap bubble treatment process of film deposition apparatus of the present invention is included in the said film deposition apparatus and processes entrap bubble, and wherein the said film deposition apparatus comprises: the thin film deposition chamber; The unstripped gas supply unit disposes with a specific interval with the thin film deposition target compound, to the thin film deposition of deposit film with the chamber gas of supplying raw materials; The entrap bubble handling part is processed the entrap bubble of discharging from above-mentioned chamber, it is characterized in that the entrap bubble treatment process of said film deposition apparatus comprises:
Collect the step of the Exhaust Gas of above-mentioned chamber;
Above-mentioned collected Exhaust Gas is cooled to the sublimation point of metal and extracts the step of metallic substance;
The step that the Exhaust Gas that extracts above-mentioned metallic substance is discharged by thermal treatment and filtration procedure.
Beneficial effect of the present invention is:
As mentioned above, according to the present invention, in unstripped gas generating unit and gas inject line well heater is set, is conducive to the distillation of metallic substance, and metallic substance and transfer gas physical efficiency are mixed fully.
And, according to the present invention, at the gas inject line valve and flow rate control device are set and can adjust ON/OFF and the flow of the gas that injects.
And, according to the present invention, in the end (front end of chamber) of gas inject line valve is set, and during not carrying out the thin film deposition operation, stops unnecessary raw material supplying, can reduce the production original cost.
And, according to the present invention, the comb between unstripped gas generating unit and the chamber is provided Purge gas and can prevent that comb is plugged.
And, according to the present invention, Purge gas line and shielding gas line are set, and can prevent from the unnecessary deposition in chamber from preventing unstripped gas to large gas leakage, can more effectively carry out thin film deposition.
And, according to the present invention, after the thin film deposition operation, can in entrap bubble, collect metallic substance, thus can air conservation, and required metallic substance in the recycling operation, can greatly reduce expense.
Description of drawings
Fig. 1 is all pie graphs of the film deposition apparatus of embodiments of the invention;
Fig. 2 is the detailed pie graph of the unstripped gas generating unit of embodiments of the invention;
Fig. 3 is the enlarged view of the insufflator of embodiments of the invention;
Fig. 4 is the pie graph of internal structure of another metallic substance of embodiments of the invention;
Fig. 5 is the schema of another unstripped gas supply method of embodiments of the invention.
Among the figure, 100: material gas supply device; 110: the transportation gas supply part; 111: the Purge gas supply unit; 112: the shielding gas supply unit; 113: the gases used supply unit of protective membrane; 114: valve; 115: flow rate control device; 120: the unstripped gas generating unit; 121: metallic substance; 122: the metallic substance supply unit; 123: well heater; 124: temperature-sensitive sticker; 125: insufflator; 125a: nozzle; 126: venting port; 127: cover is set; 128: temperature regulator; 129: retaining screw; 200: chamber; 210: the first row gas port; 220: the second row gas port; 300: the entrap bubble treatment unit of discharging entrap bubble; 310: the metallic substance collection unit; 311: the gas inject mouth; 312: dividing plate; 313: the gas moving slot; 314: venting port; 315: refrigerating unit; 316: temperature-sensitive sticker; 317: temperature regulator; 320: thermal treatment section; 330: filter house; 331: filter house; 340: pump; 350a: discharge line; 351a: twine gas relief line; 351b: twine gas relief line; 353: valve; 360: exhaust pressure and extraction flow sensor; 370: exhaust pressure and extraction flow adjustment part; 400: target compound; S50: Purge gas is provided; S51: shielding gas is provided; S52: the gas of supplying raw materials; S53: confirm whether thin film deposition is finished; S54: stop the supply of unstripped gas; S55: protective membrane gas is provided; S56: confirm whether protective membrane is finished with deposition; S57: stop to supply with protective membrane gas; S58: whether the affirmation program is finished.
Embodiment
Fig. 1 is the synoptic diagram of the film deposition apparatus of the embodiment of the invention.
Film deposition apparatus comprises material gas supply device 100, carries out the chamber 200 of thin film deposition program and the entrap bubble treatment unit 300 of discharge entrap bubble.
Material gas supply device 100 of the present invention comprises: a plurality of transportation gas supply parts 110; The a plurality of unstripped gas generating units 120 that are connected with above-mentioned each transportation gas supply part 110; Form film at the optical window of chamber 200 when being provided for preventing thin film deposition, and the Purge gas supply unit 111 that the gas that connects comb between unstripped gas generating unit 120 and the chamber 200 is purified; Be provided for preventing that metal gas is to the shielding gas supply unit 112 of chamber 200 outside gas leakages when thin film deposition; And be provided at the gases used supply unit 113 of protective membrane that the metallic film upper end forms protective membrane or insulating film desired gas when forming metallic film.
Above-mentioned gas supply unit 110,111,112,113 is by being used for providing the comb (gas inject line) of gas to be connected to chamber 200, and is provided with well heater at each comb, so that gas heating is to more than the sublimation point of metallic substance.Usually preferably be heated to than about high 10 degree of sublimation point.As mentioned above; injecting gas is heated so that transport gas and mix fully with the metallic substance that has distilled by well heater; and when Purge gas or shielding gas arrived the chamber 200 that forms metallic film, the unstripped gas in making it and being blended in metallic substance was mixed fully.
Top at the comb that is connected with above-mentioned transportation gas supply part 110 is equipped with valve 114, blocking-up injecting gas when not carrying out gas inject.And, in the rear end of above-mentioned valve 114 flow rate control device 115 being installed, it is used for the control flow and namely is controlled to be: make flow become large when a large amount of gas inject of needs, when opposite flow is diminished.In the rear end of above-mentioned flow rate control device 115 valve is installed also and injecting gas capable of blocking namely all is equipped with valve in the front and back end of above-mentioned flow rate control device 115, can prevents the adverse current of gas.The gases used supply unit 113 of above-mentioned Purge gas supply unit 111, shielding gas supply unit 112 and protective membrane all is connected to chamber 200 by comb, is provided with flow rate control device and valve at each comb.
Above-mentioned transportation gas, Purge gas and shielding gas be rare gas element or nitrogen preferably.Above-mentioned Purge gas supply unit 111 and shielding gas supply unit 112; separate formation with transportation gas supply portion in the present embodiment; also can common feed section; and the gas inject line is used in split, and the rare gas element or the nitrogen that namely transport gas supply part inject by the comb that is connected with each supply unit after supply unit is discharged from.
The gases used supply unit 113 of said protection film is provided at metallic film top and forms protective membrane or the required gas of insulating film when forming metallic film.Said protection film is used for the gas of deposition protective membrane or insulating film in semi-conductor or field of display with the common use of gas.Said protection film is gases used when being injected into chamber 200 via unstripped gas generating unit 120, and a part of gas is not directly injected into chamber 200 via unstripped gas generating unit 120.Via the protective membrane of above-mentioned raw materials γ-ray emission section 120 gases used and do not mix before arriving chamber 200 via the gas of unstripped gas generating unit 120 after be injected into chamber 200.Can by control via the gas of above-mentioned raw materials γ-ray emission section with not via the flow of the gas of unstripped gas generating unit, adjust the concentration of the gas that is injected into chamber 200.
And in the end of above-mentioned transportation gas inject line and the gases used injection line of protective membrane, namely the positive front end of chamber 200 is equipped with a plurality of valves, and unstripped gas is directly injected into chamber 200 when opening valve.Above-mentioned transportation gas inject line forms with unstripped gas and measures accordingly, and is mixed to prevent unstripped gas.
In the conventional art, valve only is installed on the rear end of unstripped gas generating unit 120, but the supply of valve-off blocking-up gas during not carrying out program needs a large amount of time but rush in comb when start program provides gas till flowing through certain flow.Therefore temporarily do not cause the unstripped gas waste even do not carry out also continuing to supply raw materials gas in the situation of program.Unstripped gas refers to transport gas and the mixed gas of metallic substance that distils.
At above-mentioned Purge gas supply unit 111 purification comb 116 is installed; be connected between above-mentioned purification unstripped gas generating unit and the chamber; and be connected with the gas inject line with said protection film, can provide Purge gas to the comb that connects unstripped gas generating unit 120 and chamber 200.Make the unstripped gas residue that is stacked into the comb between unstripped gas generating unit 120 and the chamber 200 be discharged to the outside by above-mentioned purification comb.Above-mentioned purification comb is not discharged to thermal treatment section 320 via chamber 200.
Above-mentioned raw materials γ-ray emission section 120 stores the raw metal that is used in thin film deposition.Be described in detail with reference to Fig. 2.
Above-mentioned raw materials γ-ray emission section 120 comprises: the unstripped gas supply unit 122 that stores metallic substance; Be used for making above-mentioned metallic substance to be heated to the above well heater 123 of sublimation point; Be used for the temperature-sensitive sticker 124 that the temperature to above-mentioned heater heats detects; And the temperature of detection said temperature sensor 124 and the temperature regulator 128 of control heater temperature.And above-mentioned metallic substance supply unit 122 comprises: be connected, be used for spraying the insufflator 125 of the nozzle-like of transporting gas with transportation gas inject line; Venting port 126 for the inverted v-shaped of discharging the unstripped gas of mixing with transportation gas.Cover 127 is set in the upper end of above-mentioned metallic substance supply unit 122, so that metallic substance inserts or taking-up, and fixing by retaining screw 129.Fig. 3 is the enlarged view of insufflator 125, is provided with nozzle 125a.Said nozzle 125a has the hole of spraying unstripped gas, for round-shaped.
Above-mentioned metallic substance 121 can use the various metals materials such as chromium (Cr), molybdenum (Mo), tungsten (W), iron (Fe), copper (Cu), gold (Au), silver (Ag), platinum (Pt), nickel (Ni), tantalum (Ta) or titanium (Ti).Such metallic substance 121 is heated by above-mentioned well heater 123, is sublimed into gas and mixes and generate unstripped gas by the transportation gas of insufflator 125 with injection.The unstripped gas that generates is thus discharged from unstripped gas generating unit 120 by venting port 126, and is injected into chamber 200 along unstripped gas injection line.This moment, the temperature of above-mentioned well heater 123 was detected by temperature-sensitive sticker 124, and temperature regulator comes the temperature of control heater according to the value of temperature-sensitive sticker.At transportation gas inject line mounting heater 123 and temperature-sensitive sticker 124, temperature is controlled at the sublimation point that is not less than metallic substance by temperature regulator 128, and the vapour pressure of the gas that distils along with temperature is different, thereby can control the amount of the gas that distils.
As mentioned above; the unstripped gas that is injected into chamber 200 is used in to the target compounds such as substrate 400 deposit films; Purge gas sprays to prevent to form film at optical window to optical window, and shielding gas forms invisible door and window (air curtain) and prevents the unstripped gas leakage.
Above-mentioned raw materials γ-ray emission section 120 uses protective membrane as required.Protective membrane deposits raw materials used common use is used for deposition protective membrane or insulating film in semi-conductor or field of display material.
Turn back to Fig. 1, the process that entrap bubble is discharged from is described.
Entrap bubble refers to carry out do not relate to after the thin film deposition gas of thin film deposition, and it equates with exhaust.Mix use entrap bubble or exhaust according to the literary composition meaning.
Above-mentioned discharge line 350a connection metal material collection unit 310, thermal treatment section 320, filter house 330 and pump 340 beyond above-mentioned metallic substance collection unit 310 directly connects gas relief line 350a, also are formed with the winding gas relief line 351a that is intertwined and connected before and after it.
That is, above-mentioned gas relief line 350a is connected with first row gas port 210 collection unit 310 transmission entrap bubbles, twines gas relief line 351a and makes entrap bubble directly be sent to thermal treatment section 320.Has valve 353 at above-mentioned gas relief line 350a and winding gas relief line 351a.Determine that according to the ON/OFF of above-mentioned valve 353 entrap bubble is sent to metallic substance collection unit 310 and still is directly inputted to thermal treatment section 320.When the metallic substance that uses in the thin film deposition comprises gold (Au) or the such high-valency metal of silver (Ag), collect it by metallic substance collection unit 310, can not collect direct discharge when being not high-valency metal.The residual gas of not discharging by above-mentioned first row gas port 210 is discharged by second row gas port 220, via twining gas relief line 351b 310 windings of metallic substance collection unit is connected with thermal treatment section 320.Almost do not remaining by raw metal in second row gas port 220 expellant gas, therefore twining gas relief line 351b and need not to be connected with metallic substance collection unit 310, and need not to arrange well heater.
But, by containing a large amount of raw metals in first row gas port 210 expellant gas, therefore, before arriving thermal treatment section 320 at Exhaust Gas, prevent that metallic substance is cured, and be provided with well heater at above-mentioned gas relief line 350a.Self-evident, above-mentioned well heater also can be arranged at and twine on the gas relief line 351a.And well heater is not set after the thermal treatment section 320.Be attached with exhaust pressure and extraction flow sensor 360 at above-mentioned gas relief line 350a, can measure exhaust pressure and flow.
The value of exhaust pressure and extraction flow sensor 360 is measured in exhaust pressure and extraction flow adjustment part 370, and adjusts pump 340 according to its result, and adjusts exhaust pressure.
Be actually used in the unstripped gas of thin film deposition in the thin film deposition operation seldom, most of unstripped gas is discharged as entrap bubble, and its utilization ratio is very low.Especially when metallic substance is gold, if only utilize the expense that entrap bubble need to be very large of once just discharging.The present invention utilizes aforesaid metallic substance collection unit 310 to extract metallic substance and recycling out in entrap bubble, greatly reduces expense.
Detailed pie graphs of the internal structure of the above-mentioned metallic substance collection unit 310 of expression such as 4.Describe the process that metallic substance is collected in detail with reference to Fig. 4.
Be formed with a plurality of dividing plates 312 that separate inside in above-mentioned metallic substance collection unit 310, be formed with gas moving slot 313 in the mutual diagonal positions of the dividing plate of aforementioned barriers 312.Shown in Fig. 4 (a), the gas inject mouth 311 of entrap bubble by metallic substance collection unit 310 that is used in chamber in the thin film deposition injects, and move cooling along the gas moving slot 313 that is formed at dividing plate 312, metallic substance is remained on the ground of collection unit 310 by crystallization, and remaining entrap bubble is discharged by venting port 314.Arrow represents the mobile route of entrap bubble in the above-mentioned accompanying drawing.The situation that three dividing plates 312 and gas moving slot 313 are arranged has been shown in the present embodiment, but the quantity of the quantity of dividing plate and gas moving slot can change.The gas moving slot forms with the mutual diagonal lines of dividing plate and the gas mobile route is maximized.
Simultaneously with reference to shown in Fig. 4 (b), above-mentioned metallic substance collection unit 310 comprises in inside: refrigerating unit 315, temperature-sensitive sticker 316 and control the temperature regulator 317 of refrigerating unit 315 according to the value of temperature-sensitive sticker 316.Said temperature sensor 316 preferably is arranged on the venting port 314 that the bottom surface of metallic substance collection unit 310 and entrap bubble discharge.The entrap bubble that is injected into metallic substance collection unit 310 moves to the direction of arrow shown in Fig. 4 (a), is cooled gradually by refrigerating unit 315, and the crystallization of metallic substance is on the ground residual.
For example, when the initial temperature that is injected into the entrap bubble of metallic substance collection unit 310 is made as 60 ℃, be cooled to 50 ℃ by refrigerating unit 315 in separated by dividing plate first, in another, be cooled to 45 ℃, be cooled to again 35 ℃ in another, be cooled to 25 ℃ between last again, metallic substance is cured as crystallization and forms on the ground, and last remaining entrap bubble is discharged by venting port 314.
Most of metallic substance is by crystallization in above-mentioned metallic substance collection unit 310, and still a part of metallic substance still is present in the entrap bubble.The metallic substance that is present in the entrap bubble passes through heat treatment process and separating metal again in the thermal treatment section 320 be used to being heated to 100 ℃～600 ℃ well heater that comprises.
Reaction formula one is for example lower:
M (CO) 6--" M (metal)+(CO or CO2 or ...)
The entrap bubble of the above-mentioned thermal treatment of process section 320 is discharged in the atmosphere by filter house 330,331.Above-mentioned filter house comprises the first filter house 330 of filtering macroparticle and the second filter house 331 of filter particulates.Above-mentioned thermal treatment section 320 comprises well heater.
Injection and the exhaust pathway of the below's general introduction metallic substance.
Metallic substance existed with the chemicals form of M (CO) n before putting into chamber 200, put into chamber after, a part of raw metal is deposited as film through radium-shine chemical vapour deposition (CVD) method.At this moment, carry out having gas and raw metal (M (Con)) after CO, the CO2 reaction in the inside of chamber 200.Most of metallic substance is directly discharged without reaction after the above-mentioned reaction, and is collected in 310 coolings of metallic substance collection unit.The metallic substance of in above-mentioned metallic substance collection unit 310, not collecting in thermal treatment section 320 through heat treatment process and waste gas is not discharged to the outside.
As mentioned above, metallic substance is filtered by metallic substance collection unit 310, thermal treatment section 320 and filter house 330, and only has gas to be discharged in the atmosphere.
Fig. 5 is the schema of the unstripped gas supply method of embodiments of the invention.
At first, provide successively Purge gas, shielding gas and unstripped gas (S50, S51, S52) to chamber.By Provision in advance Purge gas and shielding gas, when unstripped gas is injected into chamber and deposits program, can prevent from that unstripped gas from depositing to be formed on the optical window in the chamber and to be discharged to the outside.
Till above-mentioned gas is supplied with and to be provided to thin film deposition always and to finish.
Confirm whether thin film deposition finishes (S53), when thin film deposition is finished, stops the supply (S54) of unstripped gas, provide protective membrane with gas (S55), be about to the gases used chamber that offers of protective membrane for the deposition protective membrane.Also to continue to provide Purge gas and shielding gas this moment.
Said protection film with gas also with unstripped gas continue in the same manner to provide finish to deposition till; confirm afterwards whether protective membrane finishes (S56) with deposition; when the protective membrane deposition finishes; stop to supply with protective membrane with gas (S57), confirm again whether program is finished (S58) and again supplied raw materials gas or finish program determining.
In the said procedure, by the valve ON/OFF control unstripped gas of the positive front end of chamber and supply and the blocking-up of protective membrane usefulness gas.
And inventive concept disclosed by the invention and embodiment are used by those skilled in the art as the basis of revising or be designed to another structure in order to realize same purpose of the present invention.And, by carrying out various changes on the basis of structure within not breaking away from the claim scope that those skilled in the art revised or changed.
Claims (30)
1. the unstripped gas feeding mechanism of a film deposition apparatus is characterized in that, comprising:
The thin film deposition chamber;
Transportation gas supply department installs across a certain distance with the thin film deposition target compound, is provided for the transportation gas of transport metal material with chamber to the thin film deposition of deposit film;
The unstripped gas generating unit stores above-mentioned metallic substance, and the above-mentioned metallic substance that distils makes it mix with above-mentioned transportation gas;
Transportation gas inject line, connect above-mentioned transportation gas supply department and unstripped gas generating unit, to transport gas and unstripped gas and be sent to said film deposition chamber, have for transporting gas or unstripped gas and maintain well heater more than the sublimation point, the end that is connected with above-mentioned chamber is equipped with the valve for the blocking-up gas inject.
2. the unstripped gas feeding mechanism of film deposition apparatus as claimed in claim 1 is characterized in that, above-mentioned transportation gas inject line comprises the flow rate control device of adjusting transportation gas injection rate.
3. the unstripped gas feeding mechanism of film deposition apparatus as claimed in claim 1 is characterized in that, also comprises:
The Purge gas that prevents the unstripped gas deposition is injected to being formed on the said film deposition by Purge gas supply department with the optical window in the chamber;
Purge gas is injected line, and above-mentioned Purge gas is transferred to the thin film deposition chamber.
4. the unstripped gas feeding mechanism of film deposition apparatus as claimed in claim 1 is characterized in that, also comprises:
Shielding gas supply department, injection prevents that said film from depositing the shielding gas that leaks usefulness with the unstripped gas in the chamber to the outside;
Shielding gas injects line, and above-mentioned shielding gas is sent to the thin film deposition chamber.
5. the unstripped gas feeding mechanism of film deposition apparatus as claimed in claim 1 is characterized in that, also comprises:
Protective membrane gas supply department, when forming metallic film, supply forms protective membrane or the used gas of insulating film on metallic film top;
Protective membrane gas inject line is sent to the thin film deposition chamber with said protection film with gas.
6. the unstripped gas feeding mechanism of film deposition apparatus as claimed in claim 3, it is characterized in that, in above-mentioned Purge gas supply department the purification comb is installed, is connected between above-mentioned purification unstripped gas generating unit and the chamber, be used for the supply Purge gas from Purge gas supply department.
7. the unstripped gas feeding mechanism of film deposition apparatus as claimed in claim 5 is characterized in that, also comprises:
Purge gas supply department injects Purge gas and prevents that unstripped gas is deposited on the said film deposition with on the transparent optical window in the chamber;
Purge gas is injected line, and Purge gas is transferred to the thin film deposition chamber;
Purify comb, be installed in the above-mentioned Purge gas supply department, and be connected with the gas inject line with said protection film, be used for purifying the wire between unstripped gas generating unit and the chamber, supply Purge gas from Purge gas supply department.
8. such as the unstripped gas feeding mechanism of each the described film deposition apparatus in the claim 3 to 5, it is characterized in that, comprising:
Flow rate control device is installed in above-mentioned Purge gas and injects line, shielding gas injection line and protective membrane with on the gas inject line, is used for adjusting the flow of gas;
Valve is installed in the front and back end of above-mentioned flow rate control device.
9. such as the unstripped gas feeding mechanism of each the described film deposition apparatus in the claim 3 to 5, it is characterized in that above-mentioned Purge gas is injected line, shielding gas injects line and protective membrane has well heater with the gas inject line.
10. the unstripped gas feeding mechanism of film deposition apparatus as claimed in claim 1 is characterized in that, above-mentioned raw materials γ-ray emission section comprises:
Metallic substance supply department is used for storing metallic substance;
The heating part is used for above-mentioned metallic substance is heated to more than the sublimation point;
Temperature-sensitive sticker is for detection of above-mentioned Heating temperature.
11. the unstripped gas feeding mechanism of film deposition apparatus as claimed in claim 10 is characterized in that, above-mentioned metallic substance supply department comprises:
The nozzle type insufflator is connected with transportation gas inject line, is used for spraying transportation gas;
The inverted V-shape venting port is used for discharging the unstripped gas of mixing with transportation gas.
12. the unstripped gas feeding mechanism of film deposition apparatus as claimed in claim 10 is characterized in that, comprises that also temperature regulator comes the temperature of control heater by the temperature that detects the said temperature sensor.
13. the entrap bubble treatment unit of a film deposition apparatus is characterized in that, comprising: the metallic substance collection unit, install every certain intervals with the thin film deposition target compound, from the Exhaust Gas of thin film deposition with the chamber discharge of deposit film, collect metallic substance;
Pump, by the entrap bubble gas relief line that is connected with above-mentioned chamber with the indoor entrap bubble of a specific pressure extracting cavity; Wherein, have well heater at the gas relief line that connects above-mentioned chamber and metallic substance collection unit, entrap bubble is maintained more than the sublimation point of metallic substance.
14. the entrap bubble treatment unit of film deposition apparatus as claimed in claim 13 is characterized in that, comprises that also thermal treatment section can't be separated through heat treatment process by the metallic substance that above-mentioned metallic substance collection unit is separated.
15. the entrap bubble treatment unit such as claim 13 or 14 described film deposition apparatus is characterized in that, also comprises filter house, filtering metal grain from the Exhaust Gas of above-mentioned metallic substance collection unit or the discharge of thermal treatment section.
16. the entrap bubble treatment unit of film deposition apparatus as claimed in claim 13 is characterized in that, above-mentioned gas relief line comprises for detection of the exhaust pressure of the pressure of chamber interior and flow and extraction flow sensor.
17. the entrap bubble treatment unit such as claim 13 or 14 described film deposition apparatus is characterized in that, has well heater at the gas relief line that connects above-mentioned chamber and thermal treatment section, entrap bubble is maintained more than the sublimation point of metallic substance.
18. the entrap bubble treatment unit of film deposition apparatus as claimed in claim 14 is characterized in that, above-mentioned metallic substance collection unit has the winding gas relief line that is intertwined and connected before and after it.
19. the entrap bubble treatment unit of film deposition apparatus as claimed in claim 13 is characterized in that, above-mentioned gas relief line comprises the first gas relief line and the second gas relief line, and the second gas relief line twines Metal Material ﹠ Heat Treatment section and connects.
20. the entrap bubble treatment unit of film deposition apparatus as claimed in claim 18 is characterized in that, has valve and Exhaust Gas is maintained well heater more than the metallic substance sublimation point at above-mentioned winding gas relief line; Determine that according to the ON/OFF of above-mentioned valve entrap bubble is sent to above-mentioned metallic substance collection unit and still is directly inputted to thermal treatment section.
21. the entrap bubble treatment unit of film deposition apparatus as claimed in claim 13 is characterized in that the inwall of above-mentioned metallic substance collection unit has refrigerating unit.
22. the entrap bubble treatment unit of film deposition apparatus as claimed in claim 13 is characterized in that, has a plurality of dividing plates that its inside is separated in above-mentioned metal collection unit, has the gas moving slot in each linea angulata position of aforementioned barriers.
23. the entrap bubble treatment unit of film deposition apparatus as claimed in claim 14 is characterized in that, above-mentioned thermal treatment section comprises well heater.
24. the entrap bubble treatment unit of film deposition apparatus as claimed in claim 23 is characterized in that, above-mentioned heater heats to 100 ℃～600 ℃.
25. the entrap bubble treatment unit of a film deposition apparatus is characterized in that, comprising:
The thin film deposition chamber;
The metallic substance collection unit is installed across a certain distance with the thin film deposition target compound, collects metallic substance the Exhaust Gas of discharging with chamber from the thin film deposition of deposit film;
Thermal treatment section can not separate through heat treatment process from the metallic substance that above-mentioned metallic substance collection unit is separated;
Filter house, filtering metal grain from the Exhaust Gas that above-mentioned thermal treatment section discharges;
Pump extracts the entrap bubble in the chamber with a specific pressure by the entrap bubble gas relief line that is connected with above-mentioned chamber; Wherein, have well heater at the gas relief line that connects above-mentioned chamber and metallic substance collection unit, entrap bubble is maintained more than the sublimation point of metallic substance;
Exhaust pressure and extraction flow adjustment part are adjusted the pressure of said pump and are adjusted exhaust pressure and flow.
26. the entrap bubble treatment unit of film deposition apparatus as claimed in claim 25, it is characterized in that, above-mentioned gas relief line is equipped with the pressure for detection of exhaust pressure, exhaust pressure and the extraction flow sensor of flow, and the pressure of pump is adjusted in above-mentioned exhaust pressure and extraction flow adjustment part according to the output valve of above-mentioned sensor.
27. the unstripped gas Supply Method of a film deposition apparatus, described film deposition apparatus comprise, the thin film deposition chamber; Unstripped gas supply department installs across a certain distance with the thin film deposition target compound, to the thin film deposition of deposit film with the chamber gas of supplying raw materials; The entrap bubble handling part is processed the entrap bubble of discharging from above-mentioned chamber, it is characterized in that the unstripped gas Supply Method of film deposition apparatus may further comprise the steps:
The step of interim supply Purge gas, shielding gas and unstripped gas, Purge gas is used for preventing that the said film deposition is with depositing unstripped gas on the optical window in the chamber, shielding gas is used to form invisible door and window and prevents that the said film deposition from leaking outside with the unstripped gas in the chamber, and unstripped gas is used for deposit film; Wherein, when unstripped gas was sent to said film deposition and use chamber, the use well heater maintained unstripped gas more than the sublimation point;
Judge whether deposit metal films is finished, according to its result continue to supply raw materials gas or stop the supply of unstripped gas, be provided at metallic film top and form the protective membrane of protective membrane or insulating film with the step of gas.
28. the unstripped gas Supply Method of film deposition apparatus as claimed in claim 27; it is characterized in that; also comprise step: after providing said protection film with gas; judge whether protective membrane deposition finishes, continue to supply protective membrane with gas or stop protective membrane with the gas supply gas of supplying raw materials according to its result.
29. the unstripped gas Supply Method of film deposition apparatus as claimed in claim 27 is characterized in that, above-mentioned raw materials gas or protective membrane are that the ON/OFF of the valve by being installed in above-mentioned chamber front end is supplied or blocked with the supply of gas and blocking-up.
30. the entrap bubble treatment process of a film deposition apparatus, described film deposition apparatus comprises: the thin film deposition chamber; Unstripped gas supply department installs across a certain distance with the thin film deposition target compound, to the thin film deposition of deposit film with the chamber gas of supplying raw materials; Wherein, when unstripped gas was sent to said film deposition and use chamber, the use well heater maintained unstripped gas more than the sublimation point; The entrap bubble handling part is processed the entrap bubble of discharging from above-mentioned chamber, it is characterized in that the entrap bubble treatment process of said film deposition apparatus comprises:
Collect the step of the Exhaust Gas of above-mentioned chamber;
Be cooled to the Exhaust Gas of above-mentioned collection below the metal sublimation point and extract the step of metallic substance;
Discharge the step of the Exhaust Gas that extracts above-mentioned metallic substance by thermal treatment and filtration procedure.
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020060133586A KR100806113B1 (en) | 2006-12-26 | 2006-12-26 | Metal gas supply apparatus and remaining gas removal apparatus used for thin film depositing apparatus and method thereof |
| KR1020060133586 | 2006-12-26 | ||
| KR10-2006-0133586 | 2006-12-26 | ||
| PCT/KR2007/006808 WO2008078950A1 (en) | 2006-12-26 | 2007-12-26 | Metal gas supply apparatus and remaining gas removal apparatus used for thin film depositing apparatus and method thereof |
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| CN101568666A CN101568666A (en) | 2009-10-28 |
| CN101568666B true CN101568666B (en) | 2013-01-02 |
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| CN2007800480685A Active CN101568666B (en) | 2006-12-26 | 2007-12-26 | Metal gas supply apparatus and remaining gas removal apparatus used for thin film depositing apparatus and method thereof |
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| JP (1) | JP2010514927A (en) |
| KR (1) | KR100806113B1 (en) |
| CN (1) | CN101568666B (en) |
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- 2007-12-26 CN CN2007800480685A patent/CN101568666B/en active Active
- 2007-12-26 WO PCT/KR2007/006808 patent/WO2008078950A1/en active Application Filing
- 2007-12-26 JP JP2009543934A patent/JP2010514927A/en active Pending
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Also Published As
| Publication number | Publication date |
|---|---|
| WO2008078950A1 (en) | 2008-07-03 |
| CN101568666A (en) | 2009-10-28 |
| TW200901287A (en) | 2009-01-01 |
| KR100806113B1 (en) | 2008-02-21 |
| JP2010514927A (en) | 2010-05-06 |
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