CN101542019B - Exhaust system - Google Patents
Exhaust system Download PDFInfo
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- CN101542019B CN101542019B CN2007800149508A CN200780014950A CN101542019B CN 101542019 B CN101542019 B CN 101542019B CN 2007800149508 A CN2007800149508 A CN 2007800149508A CN 200780014950 A CN200780014950 A CN 200780014950A CN 101542019 B CN101542019 B CN 101542019B
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- Prior art keywords
- lamina affixad
- exhaust
- pair
- pipe
- path
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4412—Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
Abstract
An exhaust system includes: an exhaust pressure controller interposed in an exhaust passage and including: a pipe body including a side peripheral wall in which at least one port is formed; and a gas introduction wall for introducing an exhaust gas flowing from an upstream side of the pipe body so that the exhaust gas flows downstream without coming into direct contact with the port and vicinity thereof, one face of the gas introduction wall forming a pressure control path together with an inner face of the side peripheral wall while another face of the gas introduction wall forming an exhaust gas path along which the exhaust gas flows. The port communicates with the pressure control path, and the pressure control path communicates with the exhaust gas path at part downstream of the port.
Description
Technical field
The present invention relates to be used to eject exhaust system from the emission gases of reaction chamber of semiconductor wafer processing device etc., relate in particular to the improvement of a kind of exhaust gas collection device (exhaust trap), this exhaust gas collection device is collected the solid matter that is generated by the unreacting gas that is comprised in the emission gases.
Background technology
Usually, for making semiconductor element, reactant gases is imported in the reaction chamber in the treatment unit and the processing of being scheduled to, treatment unit for example is that the film that utilizes CVD (chemical vapour desposition) forms system, is used for the oxidation/diffusion system on process semiconductor wafers surface or is used for forming at film the dry etching system of wiring pattern, or the like.For example, forming poly--Si, SiO
2, Si
2N
4Or under the situation of the film of analogue, will be such as SiH
4, Si
2H
6, SiH
2, Cl
2, NH
3, PH
3, N
2O, TEOS or similar reactant gases import in the reaction chamber, to form corresponding film by thermal treatment on semiconductor substrate.
Used reactant gases has low utilising efficiency to several per-cents in the processing that these systems carry out, and nearly all reactant gases all is discharged from as unreacting gas.When a kind of emission gases that comprises such unreacting gas during by the exhaust-duct, this unreacting gas is because the temperature of emission gases reduces condenses, and order is by reaction product and form solid matter (for example, the NH of the generations such as liquefied material of gas from film
4Cl and AlCl
3) be deposited in inner-walls of duct etc. and locate.When the pressure change in the reaction chamber, for example,, be deposited in solid matter in the exhaust-duct and fly back (fly back) (refluxing (backflow)) in reaction chamber to atmospheric pressure environment from the environment change of decompression, on semiconductor wafer, thereby cause the output of semiconductor element to reduce.
In view of afore-mentioned, in such exhaust system, the exhaust pressure controller is set between reaction chamber and vacuum pump, this exhaust pressure controller is used for reducing overpressure by vacuumizing.Adopt this exhaust pressure controller, dilute remaining film formation composition by importing rare gas element, and reduce overpressure by vacuumizing.In the exhaust pressure controller of some type, a plurality of (for example, three to five) tube stub (pipingjoint) is connected to its vapor pipe, is used for except adjusting the pressure by gas importing/discharging, and also dilute remaining film and be formed into branch or the like by importing rare gas element.Described tube stub is connected to rare gas element feeding mechanism, vacuum pump or the like, and described rare gas element feeding mechanism constitutes (for example referring to patent documentation 1) by ingress pipe, flow director, setter, chemical cylinder (chemical cylinder) etc.Patent documentation 1: the Japanese Patent Application Publication file, publication number is: the spy opens flat 5-17287.
Summary of the invention
The problem to be solved in the present invention
The vapor pipe of aforementioned exhaust pressure controller in the operational process of treatment unit by band well heater (tapeheater) or the similarly whole heating of device, thereby do not allow the film of the remnants that comprise in the emission gases form on composition and the inwall of solid matter attached to vapor pipe by its generation.As shown in figure 18, it is tube stub 44 that vapor pipe (short tube) 43 has annex, and band well heater or analogue are difficult to be wound on above it.Therefore, be difficult to fully heat the port 45 and near the part thereof of the vapor pipe 43 that is communicated with tube stub 44.The unreacting gas that is comprised in this emission gases that has caused being passed through in the vapor pipe 43 contacts with port 45, causes that the temperature of emission gases reduces.Temperature reduces the cohesion that causes unreacting gas, thereby the unreacting gas that is condensed is as solid matter (settling) D precipitation and attached thereto.When institute's sedimentary solid matter heating, port 45 has just got clogged, and has suppressed to be used to reduce the importing and the air discharging of the rare gas element of overpressure thus.Therefore, the cycle of clean operation (maintenance) is shortened, thereby has reduced the availability of semiconductor element treatment unit.
In view of afore-mentioned, the objective of the invention is to, in a kind of exhaust system that is used for reducing the emission gases pressure change that comprises the exhaust pressure controller, the film of the remnants that comprise by preventing in the emission gases form composition and by the solid matter of its generation at port block, to prolong the maintenance period of exhaust pressure controller, thereby the availability of raising semiconductor element treatment unit etc., wherein this exhaust pressure controller comprises the body that emission gases is passed through, and this body has the side perisporium, forms at least one port on this side perisporium.
The means of dealing with problems
To achieve these goals, the invention provides a kind of exhaust system, this exhaust system comprises: the exhaust pressure controller, and described exhaust pressure controller plugs in the exhaust-duct and comprises: body, described body comprises the side perisporium, forms at least one port in described side perisporium; Import wall with gas, be used to import and flow through next emission gases from described body upstream side, so that emission gases flows to the downstream and does not directly contact with described port and vicinity thereof, a face of described gas importing wall forms the pressure-controlling path together with the inside face (innerface) of described side perisporium, and described gas imports another face formation exhaust pathway of wall, emission gases flows along described exhaust pathway, wherein, described port is communicated with the pressure-controlling path, and pressure-controlling path and exhaust pathway are communicated in the part in the downstream of described port.
In above-mentioned exhaust system, the exhaust pressure controller may further include: the ring that is removably mounted on described body upstream inner edge; With the annular containment member, the periphery installation of described ring is placed in the end, upstream of described body and between the vapor pipe of described body upstream, wherein, the end, upstream that described gas imports wall is fixed on described ring thereby described ring sealing part centers on.
Further, described gas importing wall can be a tubular along the inside face of described side perisporium.
Optionally, comprise further that in above-mentioned exhaust system preferably, described exhaust gas collection device comprises: plug the cohesion pipe in the exhaust-duct under the situation of reactant gases cohesion that is used for making emission gases and the exhaust gas collection device of catching it; A pair of first lamina affixad comprises that the vertical section of the cohesion tubular axis heart is clipped between this a pair of first lamina affixad, and about described vertical section toward each other, first path is formed between this a pair of first lamina affixad this a pair of first lamina affixad in described cohesion pipe; Banded second lamina affixad, this band shape second lamina affixad is formed at the downstream in described first path in described cohesion pipe, make when described axis direction is observed, it is corresponding to the inside face of described first path and the described cohesion pipe of bridge joint, a pair of second path is formed between the inside face of described second lamina affixad and described cohesion pipe, described vertical section is clipped between this a pair of second path, and this a pair of second path about described vertical section toward each other; And a plurality of fins, described a plurality of fins are upright to be located on the upper side of the upper side (upper face) of described a pair of first lamina affixad and described second lamina affixad.
Under above situation, the upright adjacent fins of being located at the upper side of described first lamina affixad can be in height different; The tubular cooling space that imports heat-eliminating medium can be formed in the side perisporium of cohesion pipe; Each of a plurality of fins can have the surface of the sandblasting of being subjected to; The cohesion pipe can be dismantled from the vapor pipe of upstream and the vapor pipe in downstream respectively at its end, upstream and downstream end; Perhaps exhaust gas collection device may further include: a pair of the 3rd lamina affixad, it is roughly the same with described a pair of first lamina affixad on shape and size, and it is arranged on the downstream of second lamina affixad in pipe in cohesion, makes when described axis direction is observed, and itself and second lamina affixad are overlapping; With the 4th lamina affixad, it is roughly the same with second lamina affixad on shape and size, and it is arranged on the downstream of the 3rd lamina affixad in pipe in cohesion, makes that when described axis direction was observed, it intersected with second lamina affixad.Further, preferably exhaust gas collection device is arranged on the downstream of exhaust pressure controller.Comprise further that in exhaust system under the situation of vacuum pumping hardware, described vacuum pumping hardware preferably is arranged on the downstream of exhaust gas collection device.
In addition, described exhaust system may further include center ring, and described center ring is arranged on emission gases and passes through on the shank between the vapor pipe adjacent on the direction, and wherein, described center ring comprises: place the ring between the adjacent vapor pipe; Around the peripheral ring sealing part of installing of described ring; With the integrally formed sleeve pipe of described ring, this sleeve pipe is arranged at least one described adjacent vapor pipe; A pair of first lamina affixad comprises that the vertical section of casing axis is clipped between this a pair of first lamina affixad, and about described vertical section toward each other, first path is formed between described a pair of first lamina affixad this a pair of first lamina affixad in sleeve pipe; Second lamina affixad, in sleeve pipe, be formed at the downstream of described a pair of first lamina affixad, make when described axis direction is observed, it is corresponding to first path and bridge joint telescopic inside face, a pair of second path is formed between second lamina affixad and the telescopic inside face, described vertical section is clipped between this a pair of second path, and this a pair of second path about described vertical section toward each other; A plurality of fins, described a plurality of fins are upright to be located on the upper side of the upper side of described a pair of first lamina affixad and described second lamina affixad.
In addition, comprise further in above exhaust system being used for removing under the situation of the unreacted gas purging gas of emission gases detoxification device that described emission gases detoxification device can be arranged on the downstream of described center ring.
The invention effect
The present invention reaches following effect.
The solid matter that has prevented to be produced by unreacting gas in the emission gases according to the exhaust pressure controller of exhaust system of the present invention is attached to port and vicinity thereof, thereby prevented described port adhering to and depositing and get clogged because of solid matter.This has prolonged the maintenance period of carrying out in order to remove such solid matter.Be connected under the situation of the waste side of making the reaction chamber that is used for film formation, oxidation/diffusion, dry etching or similar operations in the semiconductor element process in exhaust system, improved the availability of semiconductor element treatment unit the maintenance period of prolongation.
Description of drawings
[Fig. 1] Fig. 1 shows the pie graph of the exhaust system integral body of the embodiment of the invention.
The longitudinal section of the structure of the exhaust pressure controller that [Fig. 2] Fig. 2 shows in the exhaust system to be comprised.
[Fig. 3] Fig. 3 is the cross-sectional view of exhaust pressure controller.
[Fig. 4] Fig. 4 is the decomposition diagram of exhaust pressure controller.
[Fig. 5] Fig. 5 shows the longitudinal section of the variation of exhaust pressure controller.
[Fig. 6] Fig. 6 is the cross-sectional view of this variation.
The front view of the structural section of the exhaust gas collection device that [Fig. 7] Fig. 7 shows in the exhaust system to be comprised.
[Fig. 8] Fig. 8 is the cross-sectional plan view of exhaust gas collection device.
[Fig. 9] Fig. 9 is the side cross-sectional view of exhaust gas collection device.
[Figure 10] Figure 10 is the perspective illustration that is used to illustrate exhaust gas collection device.
[Figure 11] Figure 11 shows the cross sectional elevation of the variation 1 of exhaust gas collection device.
[Figure 12] Figure 12 is the cross-sectional plan view of variation 1.
[Figure 13] Figure 13 is the side cross-sectional view of variation 1.
[Figure 14] Figure 14 is the perspective illustration that is used to illustrate the variation 2 of exhaust gas collection device.
[Figure 15] Figure 15 is the perspective illustration that is used to illustrate the variation 3 of exhaust gas collection device.
The longitudinal section of the center ring structure that [Figure 16] Figure 16 shows in the exhaust system to be comprised.
[Figure 17] Figure 17 is the orthographic plan of center ring.
[Figure 18] Figure 18 is the longitudinal section of exhaust pressure controller in the conventional exhaust systems.
The explanation of reference numerals
1 short tube body (body)
2 gases import wall
3 ports
4 exhaust pathways
5 periphery walls (side perisporium)
6 inside face
7 pressure-controlling paths
8 elastic sealing elements (sealing element)
9 rings
11 vapor pipes
12 downstream ends
End, 13 upstream
21 1 faces
22 another faces
30 exhaust pressure controllers
100 exhaust gas collection devices
101 first lamina affixads
102 second lamina affixads
103 the 3rd lamina affixads
104 the 4th lamina affixads
107 cohesion pipes
108 (on first lamina affixad) fin
109 (on second lamina affixad) fin
111 first paths
112 second paths
119 inside face
120 upper side
121 upper side
122 periphery walls (side perisporium)
123 tubular cooling spaces
125 vapor pipes
End, 126 upstream
127 downstream ends
The L axle center
The Z vertical section
200 center rings
201 first lamina affixads
202 second lamina affixads
208 fins
209 fins
210 exhaust pathways
211 first paths
212 second paths
220 upper side
221 upper side
231 rings
233O shape ring (sealing element)
234 sleeve pipes
L ' axle center
Z ' vertical section
Implement best mode of the present invention
Embodiments of the invention are described below with reference to accompanying drawings.
Fig. 1 illustrates the integrally-built schematic side elevation of exhaust system according to the present invention.This exhaust system is connected to the reaction chamber 41 of the treatment unit (for example, upright hot wall type (vertical hot wall type) low pressure chemical vapor deposition system (LP-CVD)) of semiconductor wafer 40.In the present embodiment, vacuum pumping hardware 42 is arranged on the exhaust-duct that emission gases is exported to the outside from reaction chamber 41 with being used for to emission gases toxicide emission gases detoxification device 47.The exhaust pressure controller 30 that is used to reduce emission gases pressure change or the like is arranged between reaction chamber 41 and the vacuum pumping hardware 42.Be used for making unreacting gas cohesion that emission gases comprises and the exhaust gas collection device 100 that reclaims it to be arranged between exhaust pressure controller 30 and the vacuum pumping hardware 42.Have the center ring 200 that captures mechanism and place shank between the upstream joints 47a of vapor pipe 250 and emission gases detoxification device 47, described vapor pipe 250 is connected to the downstream joint 42b of vacuum pumping hardware 42.Vacuum pumping hardware 42 is constituting by mechanical booster pump and oil sealing rotary pump (perhaps water-ring pump) for example.
Fig. 2 shows the one-piece construction of exhaust pressure controller 30 to Fig. 4, and wherein Fig. 2 is a longitudinal section, and Fig. 3 is a cross-sectional view, and Fig. 4 is a decomposition diagram.
With reference to Fig. 2, exhaust pressure controller 30 comprises cylindric short tube body 1, and this cylindric short tube body 1 removably is plugged in the centre of exhaust-duct.Specifically, short tube body 1 is arranged between the cohesion pipe 107 of the short vapor pipe 11 that is connected to reaction chamber 41 and exhaust gas collection device 100, and exhaust gas collection device 100 will be described later.Short tube body 1 comprises periphery wall 5, wherein forms the port 3 that a plurality of (for example, among the figure four) are used for air feed/exhaust and/or import rare gas element.
Specifically, the space between the downstream end 12 of gas importing wall 2 is open to the inside face 6 of periphery wall 5.Exhaust pressure controller 30 comprises metal ring 9 that is removably mounted on short tube body 1 upstream inner edge and the cyclic spring sealing element of installing around ring 9 peripherys 8.Elastic sealing element 8 places between the end, upstream and the vapor pipe 11 on the upstream side of short tube body 1 at upstream side.The end, upstream 13 of gas importing wall 2 is fixed to the inner peripheral surface of ring 9.That is to say that ring 9 has blocked gas and imported space between the inside face 6 of the end, upstream 13 of wall 2 and periphery wall 5.Therefore, pressure-controlling path 7 comprises the annular downstream open end 20 that forms between the inwall 6 of the upstream enclosure portion 19 of being blocked by ring 9 and the downstream end 12 that imports wall 2 at gas and periphery wall 5.
In addition, the open area that has of downstream open end 20 is more a lot of greatly than the open area of port 3.Even the solid matter that is generated by unreacting gas in the emission gases is attached on gas importing wall 2 grades, this has all prevented obstruction.
Be used for the exterior face (outer face) 14 that a plurality of joint components 10 that end with each pipe is connected to port 3 are affixed to periphery wall 5, other ends of described each pipe are connected on the devices such as rare gas element jar (cylinder), suction pump.In addition, the heater block (not shown) such as the band well heater is provided with (centering on) on the exterior face 14 of periphery wall 5.
The operation of above-mentioned exhaust pressure controller 30 will be described below.As shown in Figure 1, short tube body 1 is plugged in the middle of the exhaust-duct of treatment unit of semiconductor wafer 40, and the port 3 of short tube body 1 is connected to the end of each pipe by joint component 10, and other ends of described pipe are connected on the devices such as rare gas element jar, suction pump.When the treatment unit of semiconductor wafer 40 was activated, the emission gases of discharging from reaction chamber 41 was fed in the short tube body 1 via vapor pipe 11.
In Fig. 2, the discharge gas stream air inlet body that flows into the short tube body 1 from upstream side imports wall 2 inboards (flowing through exhaust pathway 4), and flows to the downstream and directly do not contact with port 3 and near part thereof.Especially, gas imports wall 2 and the space between the inside face 6 and is encircled 9 and block at 13 places, end, upstream that import wall 2, flows through next gas from upstream side and enters pressure-controlling path 7 thereby stop.
For the emission gases in the diluted exhaust pressure controller 30, in Fig. 2, for example, the end, upstream of upper left joint component 10 is connected to the rare gas element jar, and the switch-valve of port 3 is opened by this upper left port 3 rare gas element is imported to pressure-controlling path 7.This makes rare gas element be filled in the pressure-controlling path 7, import wall 2 along gas and flow to the downstream, downstream open end 20 from pressure-controlling path 7 flows out then, thereby make rare gas element combine with the emission gases of coming from the upstream effluent, diluted emission gases thus, then, diluted discharge gas stream downstream.
In order to increase the pressure of emission gases, similar with the situation of dilution, via downstream open end 20 supplying inert gas.In contrast, in order to reduce the pressure of emission gases, partial discharge gas is discharged into the outside from downstream open end 20 via pressure-controlling path 7 and corresponding ports 3.
When since in by emission gases the sedimentary solid matter of unreacting gas be attached to that inwall etc. that gas imports wall 2 is gone up and during essential maintenance, at first short tube body 1 taken off from upstream exhaust pipe 11 and downstream cohesion pipe 107.Then, as shown in Figure 4, gas is imported wall 2 in short tube body 1, extract with ring 9 (and elastic sealing elements 8).Then, they are carried out ultrasonic cleaning.
Fig. 5 and Fig. 6 show the variation of exhaust pressure controller 30, and wherein Fig. 5 is a longitudinal section, and Fig. 6 is a cross-sectional view.
With reference to Fig. 5, two gases import wall 2 and are arranged on the left and right sides, are used to guide from upstream side and flow through next emission gases, make discharge gas stream contact with port 3 and near part thereof downstream and not.
In the present embodiment, as shown in Figure 5, it is the gas importing wall 2b that import wall 2a and be provided with other three ports 3 corresponding (relatively) of right side with the gas of upper left port 3 corresponding (relative) setting that gas imports wall 2.Therefore, pressure-controlling path 7a, 7b are respectively formed at gas and import between wall 2a, the 2b face 21 and the inside face 6 of periphery wall 5 separately.Upper left port 3 is communicated with the pressure-controlling path 7a in left side, and other ports 3 on right side are communicated with the pressure-controlling path 7b on right side. Gas imports wall 2a, 2b another face 22,22 separately and forms exhaust pathway 4.In addition, the part in the more downstream of the port 3 on the left of the pressure-controlling path 7a in left side and exhaust pathway 4 are communicated in, and the pressure-controlling path 7b on right side is communicated with the part of exhaust pathway 4 in the more downstream of the bottom port 3 on right side.
In addition, as shown in Figure 6, each gas import wall 2a, 2b at separately end sections along its circumferential direction bending, and each terminal surface of end sections is as the contact end face 15,15 that contacts with the inside face 6 of periphery wall 5 with closed state.In detail, gas imports wall 2a, 2b, and each all comprises arch section 16 and directly short part 17,17, arch section 16 along the inside face 6 of periphery wall 5 short tube body 1 axially on extend, directly short part 17,17 extends radially outwardly from each end of arch section 16.In other words, pressure-controlling path 7a, the 7b that gas imports formation between the inside face 6 of wall 2a, 2b and periphery wall 5 end of end and circumferential direction at its upstream is in closed state, and only is in open state at downstream end.In Fig. 5 and Fig. 6, the element that refers among identical reference numerals and Fig. 2 and Fig. 3 is identical, therefore, has omitted the explanation of these elements.
Optionally, the shape that gas imports wall 2 can be polygonal tubular, or the taper substantially such as truncated cone shape, truncated pyramid, or the like.
The quantity that gas imports wall 2 in Fig. 5 and the variation shown in Figure 6 can be 1 or 3 or more according to the quantity and the position of port 3, and can reduce on the size (width of arch section 16) of circumferential direction and/or length or increase.
In addition, short tube body 1 can suitably be designed to for example use the L shaped of L shaped pipe.
Exhaust gas collection device 100 is described below.Fig. 7 shows the structure of exhaust gas collection device 100 in the present embodiment to Figure 10, and wherein Fig. 7 is a cross sectional elevation, and Fig. 8 is a cross-sectional plan view, and Fig. 9 is a side cross-sectional view, and Figure 10 is the perspective illustration that is used to explain.
As shown in Figure 7, the exhaust gas collection device in the present embodiment 100 comprises the cohesion pipe 107 that contains exhaust pathway 110.In cohesion pipe 107, a pair of semicircle first lamina affixad 101,101 is symmetrical arranged (referring to Figure 10) with respect to the vertical section Z that comprises cohesion pipe 107 axle center L.First lamina affixad 101,101 has straight inner edge 117,117 separately, forms first flowing-path 111 between them.
Second lamina affixad 102 of bonding shaping is arranged on the downstream of first flowing-path 111 in the cohesion pipe 107.Second lamina affixad 102 is set, make its when when the direction of axle center L is observed with first flowing-path 111 corresponding (overlapping), and make itself and cohesion manage radially bridge joint of 107 inside face 119.A pair of second path 112,112 is formed on the edge separately 118,118 on second lamina affixad, 102 widths (horizontal direction among Fig. 8) and condenses between the inwall 119 of pipe 107, thereby makes it with respect to vertical section Z symmetry (referring to Figure 10).The width of second lamina affixad 102 is set to bigger than the width of first flowing-path 111.
In addition, as shown in Figure 7, basically being that a plurality of (for example being 11 the in the drawings) fin 108 of L shaped (elbow) is upright establishes (stand on) on the upper side 120 of each first lamina affixad 101, and a plurality of (for example, being 6 in the drawings) fin 109 upright being located on the upper side 121 of each second lamina affixad 102 of rectangle (band shape).
As shown in Figure 9, the fin 108 on first lamina affixad 101 is included in fin 108a, the 109b of two types that differ from one another on the height (vertical direction among Fig. 9).Brachypterism sheet 108a and long fin 108b alternately arrange by regular spaces.On the contrary, the fin 109 on second lamina affixad 102 in height be equal to each other and to arrange than the wideer spacing of the spacing between fin 108a, the 108b on first lamina affixad 101.The configuration that is parallel to each other of fin 109 on fin 108a, the 108b on first lamina affixad 101 and second lamina affixad 102, and intersect at a right angle with vertical section Z.Preferably, each surface of fin 108a, 108b all is subjected to sandblasting (blasting) (for example, granulated glass sphere sandblasting) on first lamina affixad 101.
As shown in Figure 7 and Figure 8, cohesion pipe 107 comprises the tubular cooling space 123 that is used for importing such as the such heat-eliminating medium of cold water in periphery wall 122.In other words, periphery wall 122 comprises inwall 128 and outer wall 129, forms tubular cooling space 123 between them.The water shoot susceptor 131 that is used to assemble the water-supply pipe susceptor 130 of water-supply pipe and be used for the assembly platoon water pipe is arranged on outer wall 129, thereby radially protruding.
The operation of above-mentioned exhaust gas collection device 100 will be described below.Interrelate with the action of the treatment unit of semiconductor wafer 40, the emission gases that contains unreacting gas is discharged and is sent into the cohesion pipe 107 from reaction chamber 41.Simultaneously, the tubular cooling space 123 with Cold water supply cohesion pipe 107 condenses the lamina affixad 101,102 and the upright fin of establishing 108,109 of managing in 107 with cooling.The emission gases of condensing pipe 107 from short tube body 1 inflow of upstream at first contacts to reduce its temperature with the upper side 120 or the fin 108 on its upper side 120 of first lamina affixad 101.Thus, the cohesion of part unreacting gas in the emission gases is precipitation also, thereby forms the settling by the solid matter of its generation on the upper side 120 of first lamina affixad 101 and fin 108.
Then, emission gases first path 111 between first lamina affixad 101 and 101 of flowing through contacts with the upper side 121 of second lamina affixad 102 in downstream or the fin on the upper side 121.The emission gases that contacts with second lamina affixad 102 or fin 109 further is cooled, and makes the unreacting gas of solid matter from remain in emission gases be settled out, and deposition (adhering to) is on the upper side 121 or fin 102 of second lamina affixad 102.Afterwards, emission gases second path 112 of flowing through flows to the vapor pipe 125 in downstream.
Like this, the unreacting gas in the emission gases is condensed into solid matter in cohesion pipe 107, be recovered then.When the lamina affixad 101 that is attached to cohesion pipe 107 owing to solid matter and 102 and fin 108,109 on when needing maintenance (cleaning), from taking out cohesion pipe 107 between the short tube body 1 of exhaust pressure controller 30 and the vapor pipe 125, ultrasonic cleaning cohesion pipe 107 then.
Figure 11 shows the variation 1 of exhaust gas collection device 100 to Figure 13, and wherein Figure 11 is the front view in cross section, and Fig. 2 is the orthographic plan in cross section, and Figure 13 is the side-view in cross section.Identical reference numerals refers to the components identical in Fig. 9 with Fig. 7.Above-described exhaust gas collection device 100 forms straight exhaust pathway 110, and relative therewith, in variation 1, exhaust gas collection device 100 forms L shaped exhaust pathway 110.
Similar to above-described exhaust gas collection device 100, in variation 1, the upstream side of exhaust gas collection device 100 from cohesion pipe 107 comprises successively: a pair of semicircular first lamina affixad 101,101 and banded second lamina affixad 102 (referring to Figure 13) of being roughly.A plurality of fins 108,109 are upright respectively to be located on the upper side 121 of the upper side 120 of first lamina affixad 101 and second lamina affixad 102.First lamina affixad 101,101 and second lamina affixad 102 are arranged on the upstream () of the downstream open end 127 of cohesion pipe 107, make the emission gases that is flowing in the cohesion pipe 107 contact with second lamina affixad 102 with first lamina affixad 101,101 really before flowing to the downstream part.Similar to the situation shown in Fig. 9 to Fig. 7, the fin 108 on first lamina affixad 101,101 is L shaped (elbow) (referring to Figure 13), and in height mutually different fin 108a, 108b alternately arrange (referring to Figure 11).Therefore identical to shown in Fig. 9 of other parts of exhaust gas collection device 100 and Fig. 7 omit its description.
Figure 14 and Figure 15 are respectively the perspective illustrations that the variation 2 and the variation 3 of exhaust gas collection device 100 are shown.
In variation 2 (Figure 14), cohesion pipe 107 comprises from upstream side: a pair of first lamina affixad, 101,101, the second lamina affixads 102, a pair of the 3rd lamina affixad 103,103 and the 4th lamina affixad 104.The 3rd lamina affixad 103 is identical or roughly the same with first lamina affixad 101 on shape and size.The 4th lamina affixad 104 is identical or roughly the same with second lamina affixad 102 on shape and size.In addition, the 3rd lamina affixad 103,103 be set to when the direction of the axle center L of cohesion pipe 107 is observed and each end, long limit of second lamina affixad 102 overlapping.The 4th lamina affixad 104 is set to extend along the direction of intersecting with second lamina affixad, 102 long side directions.In other words, when supposing that one group of lamina affixad unit U is made up of a pair of first lamina affixad 101,101 and second lamina affixad 102 as shown in figure 10, the exhaust gas collection device 100 of variation 2 comprises two groups of lamina affixad unit U, it disposes in the following manner: along the axle center L that condenses in the pipe 107, one group of unit U follows another group unit U and is provided with, and this group of unit U is around axle center L transfer (rotation) 90 ° of angles.
With reference to variation 3 (Figure 15), exhaust gas collection device 100 also comprises under the 4th lamina affixad in this order: a pair of the 5th lamina affixad 105,105, and it is identical or roughly the same with first lamina affixad 101,101 on shape and size; With the 6th lamina affixad 106, it is identical or roughly the same with second lamina affixad 102 on shape and size.In other words, three groups of lamina affixad unit U are made of each a pair of first lamina affixad 101,101 and second lamina affixad 102, they are arranged in such a manner and form: each unit U is provided with continuously along axle center L, and each unit U is around axle center L transfer (rotation) 90 ° of angles.Therefore the periphery wall of the fin on each lamina affixad 101 to 106 and the cohesion pipe 107 of dual structure identical with shown in Figure 10 do not illustrate.
Exhaust gas collection device 100 in the present embodiment also is changeable in design.For example, the lamina affixad unit U shown in four groups or the more picture groups 10 can be set in cohesion pipe 107, each unit U transfer (rotation) on the circumferential direction of cohesion pipe 107 is arbitrarily angled.
In the periphery wall 122 of cohesion pipe 107, window (porthole) can be set, the internal state of the cohesion pipe 107 that makes it possible to confirm that from the outside solid matter is accompanying.This is convenient to determine the time of maintenance (cleaning).
For the ease of maintenance (cleaning), each lamina affixad 101,102 ... can removably be set to the inside face 199 of cohesion pipe 107.
The cohesion pipe 107 of exhaust gas collection device 100 can be such form in the present embodiment: its axle center L horizontal-extending or vertically extension, it is arbitrarily angled perhaps to tilt.
Figure 16 and Figure 17 show the center ring 200 according to the exhaust system of present embodiment, and wherein Figure 16 is a longitudinal section, and Figure 17 is an orthographic plan.
In sleeve pipe 234, a pair of lamina affixad 201,201 is set, make them toward each other, comprise that the vertical section Z ' of sleeve pipe 234 axle center L ' is clipped in therebetween.Form first path 211 between the inner edge 217,217 of first lamina affixad 201,201.In sleeve pipe 234, on the downstream side in first path 211, second lamina affixad 202 is set, makes it, and make the inside face of its bridge joint sleeve pipe 234 along corresponding with first path 211 when axle center L ' direction is observed.A pair of second path 212 respect to one another is formed between the inside face of the edge 218,218 of second lamina affixad, 202 widths and sleeve pipe 234, and vertical section Z ' is clipped in this between second path 212.From the upper side 220 of each first lamina affixad 201, a plurality of (being three in the illustrated example) fin 208 stretches out towards upstream side.Equally, a plurality of (being two in the illustrated example) fin 209 stretches out towards upstream side from the upper side 221 of second lamina affixad 202.
The concrete aspect of center ring 200 can suitably be set as required.For example, if the upstream joints part 47a (normally encircling the joint component on 231 downstream sides) of emission gases detoxification device 47 can hold sleeve pipe 234, sleeve pipe 234 can be arranged on the downstream side on the contrary with above-mentioned situation so, perhaps can be separately positioned on upstream side and downstream side.
Similar with exhaust gas collection device 100, the shape and the quantity of the lamina affixad 201,202 in the sleeve pipe 234 can freely change.
As mentioned above, removably plug the centre of exhaust-duct according to the exhaust pressure controller 30 of the exhaust system of present embodiment, and comprise short tube body 1.In short tube body 1, port 3 is formed in the periphery wall 5, is used for air feed/exhaust and/or imports rare gas element.Form exhaust pathway 4 in gas imports wall 2 another faces 22, emission gases is mobile along this exhaust pathway 4, forms this exhaust pathway 4 and makes emission gases flow to the downstream side and directly do not contact with port 3 and vicinity thereof from the upstream side of short tube body 1.Gas imports also formation pressure-controlling path 7 between its inside face 6 of face 21 and periphery wall 5 of wall 2, port 3 can be communicated with pressure-controlling path 7, and pressure-controlling path 7 is communicated with exhaust pathway 4 in the downstream side of port 3.Therefore, stop the solid matter that produces by unreacting gas in the emission gases to adhere to and be deposited on the port 3 and the vicinity, thereby prevented the obstruction of port 3.Thus, the maintenance of exhaust pressure controller 30 (cleaning) cycle can obtain prolonging, thereby has improved the availability of semiconductor wafer 40 treatment unit.
In addition, the end, upstream 13 that gas imports wall 2 is fixed on the ring 9, ring 9 is releasably attached on the upstream inner edge of short tube body 1, can take out from short tube body 1 easily together with ring 9 thereby make gas import wall 2, has made things convenient for gas to import the cleaning operation of wall 2 and short tube body 1 inside.
In addition, gas imports wall 2 and elastic sealing element 8 with ring 9 whole formation, can be easily after the maintenance and gas is installed is apace imported wall 2, ring 9 and elastic sealing element 7 thereby make.
In addition, gas imports inside face 6 formation of wall 2 along periphery wall 5, and it is simple in structure and guarantee to stop emission gases to contact with port 3 and vicinity thereof.
Make the unreacting gas cohesion that comprised in the emission gases and reclaim it according to the exhaust gas collection device 100 of the exhaust system of present embodiment, in this exhaust gas collection device: a pair of first lamina affixad 101,101 is arranged in the cohesion pipe 107 that forms exhaust pathway 110 symmetrically with respect to the vertical section Z that contains cohesion pipe 107 axle center L, and first path 111 is formed between first lamina affixad 101,101; Banded second lamina affixad is arranged on the downstream in first path 111, make its when axle center L direction is observed corresponding to first path 111, and make its radially inside face 119 of bridge joint cohesion pipe 107, thereby make a pair of second path 112,112 be formed between the inwall 119 of second lamina affixad 102 and cohesion pipe 107 symmetrically with respect to vertical section Z; A plurality of fins 108,109 are upright respectively to be located on the upper side 121 of the upper side 120 of first lamina affixad 101 and second lamina affixad 102.Therefore, make the unreacting gas cohesion that is comprised in the emission gases, thereby reclaim solid matter (settling) effectively by its generation.
In other words, make that the unreacting gas in the emission gases of discharging condenses to become solid matter from reaction chamber 41 in exhaust gas collection device 100, it is recovered.This has suppressed the inside that solid matter is attached to vapor pipe 11, vacuum pumping hardware 42 or the like.With open flat 9-72291, spy and open the conventional cases that discloses in the Japanese Patent Application Publication document etc. of 2000-70664 and compare for the special 2000-114185, spy of opening as publication number, solid matter is prevented from flying back (backflow) to reaction chamber 41, thereby stop it to be attached on the semiconductor wafer 40, can improve output thus.And, prevent that solid matter from adhering to, thereby can avoid vacuum pumping hardware 42 to block and be out of order.
Specifically, a plurality of fins 108,109 are upright respectively to be located on the upper side 121 of the upper side 120 of first lamina affixad 101 and second lamina affixad 102, thereby makes a large amount of unreacting gas become solid matter and be attached on the fin 108,108.The pressure change of emission gases can cause emission gases to reflux in the exhaust-duct, fin 108,109 on the upper side 120,121 is less to be subjected to the influences that this emission gases refluxes and be arranged on, therefore, can prevent to come off therefrom attached to the solid matter on the fin 108,109.
Different with traditional situation is, makes a large amount of solid matters attached on a plurality of fins 108,109 that are provided with in the little space, makes exhaust gas collection device 100 integral body simplify (compaction) thus.Because the path is not zigzag and structurally very simple, so emission gases mobile smooth (guaranteeing to have the free air delivery of abundant amount), reduce himself pressure change, and be convenient to maintenance (cleaning).
In addition, by unreacting gas in the emission gases produce solid matter be easier to be attached in the exhaust gas collection device 100 of present embodiment.Therefore, when also being applied to form on the surface at semiconductor substrate the treatment unit of occasion such as silicon nitride film except being used for upright hot wall type low pressure chemical vapor deposition (LP-CVD) when exhaust system of the present invention, above-mentioned effect can fully display.
In height mutually different fin 108a, 108b are arranged alternately on the upper side 120 of lamina affixad 101 so that the emission gases turbulization, thereby make solid matter be easier to be attached to fin 108a, 108b.
In addition, the tubular cooling space 123 that heat-eliminating medium imports wherein is arranged in the periphery wall 122 of cohesion pipe 107, thereby lamina affixad 101,102 and fin 108,109 in the cooling cohesion pipe 107 cause a large amount of solid matters attached to the there.Specifically, when emission gases contacts with refrigerative lamina affixad 101,102 or refrigerative fin 108,109, the temperature of emission gases reduces rapidly, promote the cohesion of unreacting gas in the emission gases, made a large amount of solid matters be attached to lamina affixad 101,102 or fin 108,109 thus.
The surface of a plurality of fins 108,109 is subjected to sandblasting and becomes coarse, thereby impels solid matter to be attached to the there.And the solid matter that adheres to is difficult to come off therefrom.
In addition, under following situation, the amount of the solid matter that can be recovered in cohesion pipe 107 is easy to be increased in the vapor pipe that can stop solid matter to be attached to exhaust gas collection device 100 downstreams really and vacuum pumping hardware 42: with first lamina affixad 101, the 3rd lamina affixad 103 that 101 shape and size are identical, 103 are arranged on the downstream of second lamina affixad 102, thereby when the direction of axle center L is observed and second lamina affixad 102 overlapping, and four lamina affixad 104 identical with the shape and size of second lamina affixad 102 is arranged on the downstream of the 3rd lamina affixad 103, thereby intersects with second lamina affixad 102 when the direction of axle center L is observed.
Make according to the center ring 200 of the exhaust system of present embodiment and to remain in particulate components cohesion in the emission gases of from vacuum pumping hardware 42, discharging, avoid being positioned at emission gases detoxification device 47 aging in center ring 200 downstreams and be out of order, and significantly reduced the maintenance frequency of emission gases detoxification device 47.This has improved the availability of exhaust system and the productivity of the semiconductor wafer 40 produced in reaction chamber 41.
Although top embodiment has described the exhaust system of semiconductor element treatment unit, the present invention can be used for the exhaust system that various dischargings contain the emission gases of the composition that produces solid matter.
Claims (13)
1. exhaust system comprises:
The exhaust pressure controller, described exhaust pressure controller plugs in the exhaust-duct and comprises:
Body, described body comprises the side perisporium, forms at least one port in described side perisporium; With
Gas imports wall, be used to import and flow through next emission gases from described body upstream side, so that emission gases flows to the downstream and does not directly contact with described port and vicinity thereof, a face of described gas importing wall forms the pressure-controlling path together with the inside face of described side perisporium, and described gas imports another face formation exhaust pathway of wall, emission gases flows along described exhaust pathway
Wherein, described port is communicated with described pressure-controlling path, and
Described pressure-controlling path and described exhaust pathway are communicated in the part in the downstream of described port.
2. exhaust system as claimed in claim 1, wherein,
Described exhaust pressure controller further comprises:
Be removably installed in the ring of the upstream inner edge of described body; With
Ring sealing part, thus described ring sealing part install around the periphery of described ring and be placed in the end, upstream of described body and between the vapor pipe of described body upstream,
Wherein, the end, upstream of described gas importing wall is fixed to described ring.
3. exhaust system as claimed in claim 1, wherein, described gas importing wall is a tubular along the inside face of described side perisporium.
4. exhaust system as claimed in claim 1 further comprises:
Exhaust gas collection device is used for making the reactant gases cohesion of emission gases and catching it,
Wherein, described exhaust gas collection device comprises:
Plug the cohesion pipe in the described exhaust-duct;
A pair of first lamina affixad comprises that the vertical section of the cohesion tubular axis heart is clipped between described a pair of first lamina affixad, and about described vertical section toward each other, first path is formed between described a pair of first lamina affixad described a pair of first lamina affixad in described cohesion pipe;
Banded second lamina affixad, described banded second lamina affixad is formed at the downstream in described first path in described cohesion pipe, make when described axis direction is observed inside face corresponding to described first path and the described cohesion pipe of bridge joint, a pair of second path is formed between the inside face of described second lamina affixad and described cohesion pipe, described vertical section is clipped between described a pair of second path, and described a pair of second path about described vertical section toward each other; And
A plurality of fins, described a plurality of fins are upright to be located on the upper side of the upper side of described a pair of first lamina affixad and described second lamina affixad.
5. exhaust system as claimed in claim 4, wherein, the adjacent fins of founding the upper side of being located at described first lamina affixad is in height different.
6. exhaust system as claimed in claim 4, wherein, the tubular cooling space is formed in the side perisporium of described cohesion pipe, and heat-eliminating medium imports to described tubular cooling space.
7. exhaust system as claimed in claim 4, wherein, described a plurality of fins all have the surface of the sandblasting of being subjected to separately.
8. exhaust system as claimed in claim 4, wherein, described cohesion pipe is distinguished detachable at the end, upstream and the downstream end of this cohesion pipe from the vapor pipe of upstream and the vapor pipe in downstream.
9. exhaust system as claimed in claim 4, wherein,
Described exhaust gas collection device further comprises:
A pair of the 3rd lamina affixad, described a pair of the 3rd lamina affixad is identical with described a pair of first lamina affixad on shape and size, described a pair of the 3rd lamina affixad is arranged on the downstream of described second lamina affixad in described cohesion pipe, make that when described axis direction was observed, described a pair of the 3rd lamina affixad and described second lamina affixad were overlapping; With
The 4th lamina affixad, described the 4th lamina affixad is identical with described second lamina affixad on shape and size, described the 4th lamina affixad is arranged on the downstream of described a pair of the 3rd lamina affixad in described cohesion pipe, make that when described axis direction was observed, described the 4th lamina affixad intersected with described second lamina affixad.
10. exhaust system as claimed in claim 4, wherein, described exhaust gas collection device is arranged on the downstream of described exhaust pressure controller.
11. exhaust system as claimed in claim 4 further comprises:
Vacuum pumping hardware, described vacuum pumping hardware is arranged on the downstream of described exhaust gas collection device.
12. exhaust system as claimed in claim 1 further comprises:
Center ring, described center ring are arranged on emission gases and pass through shank between the vapor pipe adjacent on the direction,
Wherein, described center ring comprises:
Place the ring between the described adjacent vapor pipe;
Ring sealing part, described ring sealing part is installed around the periphery of described ring;
Sleeve pipe, described sleeve pipe and described ring be whole to be formed and is arranged at least one vapor pipe in the described adjacent vapor pipe;
A pair of first lamina affixad comprises that the vertical section of casing axis is clipped between described a pair of first lamina affixad, and about described vertical section toward each other, first path is formed between described a pair of first lamina affixad described a pair of first lamina affixad in described sleeve pipe;
Second lamina affixad, described second lamina affixad is formed on the downstream of described a pair of first lamina affixad in described sleeve pipe, make when described axis direction is observed corresponding to described first path and the described telescopic inside face of bridge joint, a pair of second path is formed between described second lamina affixad and the described telescopic inside face, described vertical section is clipped between described a pair of second path, and described a pair of second path about described vertical section toward each other; And
A plurality of fins, described a plurality of fins are upright to be located on the upper side of the upper side of described a pair of first lamina affixad and described second lamina affixad.
13. exhaust system as claimed in claim 12 further comprises:
The emission gases detoxification device, described emission gases detoxification device is arranged on the downstream of described center ring, is used for removing the unreacted gas of emission gases.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2007110264A JP5128168B2 (en) | 2006-04-24 | 2007-04-19 | Exhaust system |
| JP110264/2007 | 2007-04-19 | ||
| PCT/US2007/010112 WO2007127294A2 (en) | 2006-04-24 | 2007-04-25 | Exhaust system |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101542019A CN101542019A (en) | 2009-09-23 |
| CN101542019B true CN101542019B (en) | 2011-01-12 |
Family
ID=40686879
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2007800149508A Expired - Fee Related CN101542019B (en) | 2007-04-19 | 2007-04-25 | Exhaust system |
Country Status (2)
| Country | Link |
|---|---|
| KR (1) | KR101048255B1 (en) |
| CN (1) | CN101542019B (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100958112B1 (en) * | 2009-09-15 | 2010-05-18 | 박영수 | A heating pipe for exchaust line and exchaust line structure of semiconductor production process |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1079412A (en) * | 1992-06-02 | 1993-12-15 | 莫普罗·阿兹加茨有限公司 | Gas/liquid separation |
| US5578132A (en) * | 1993-07-07 | 1996-11-26 | Tokyo Electron Kabushiki Kaisha | Apparatus for heat treating semiconductors at normal pressure and low pressure |
| US5819683A (en) * | 1995-05-02 | 1998-10-13 | Tokyo Electron Limited | Trap apparatus |
| US6085830A (en) * | 1997-03-24 | 2000-07-11 | Fujikura Ltd. | Heat sink, and process and apparatus for manufacturing the same |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0954366A4 (en) * | 1996-12-31 | 2001-06-20 | Atmi Ecosys Corp | Inlet structures for introducing a particulate solids-containing and/or solids-forming gas stream to a gas processing system |
-
2007
- 2007-04-25 CN CN2007800149508A patent/CN101542019B/en not_active Expired - Fee Related
- 2007-04-25 KR KR1020087025497A patent/KR101048255B1/en not_active IP Right Cessation
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1079412A (en) * | 1992-06-02 | 1993-12-15 | 莫普罗·阿兹加茨有限公司 | Gas/liquid separation |
| US5578132A (en) * | 1993-07-07 | 1996-11-26 | Tokyo Electron Kabushiki Kaisha | Apparatus for heat treating semiconductors at normal pressure and low pressure |
| US5819683A (en) * | 1995-05-02 | 1998-10-13 | Tokyo Electron Limited | Trap apparatus |
| US6085830A (en) * | 1997-03-24 | 2000-07-11 | Fujikura Ltd. | Heat sink, and process and apparatus for manufacturing the same |
Also Published As
| Publication number | Publication date |
|---|---|
| KR101048255B1 (en) | 2011-07-08 |
| CN101542019A (en) | 2009-09-23 |
| KR20090018779A (en) | 2009-02-23 |
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Effective date of registration: 20110223 Address after: Tokyo, Japan, Japan Co-patentee after: Spansion Co., Ltd. Patentee after: Mitsubishi Cable Industries, Ltd. Address before: Tokyo, Japan, Japan Co-patentee before: Osaka Rasenkan Kogyo Co., Ltd. Patentee before: Mitsubishi Cable Industries, Ltd. Co-patentee before: Spansion Co., Ltd. Co-patentee before: Nippon Spansion Co., Ltd. |
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Granted publication date: 20110112 Termination date: 20140425 |