CN101540357A - Growth method for controlling nucleation of self-organization In-Ga-As quantum dots - Google Patents
Growth method for controlling nucleation of self-organization In-Ga-As quantum dots Download PDFInfo
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- CN101540357A CN101540357A CN200810102198A CN200810102198A CN101540357A CN 101540357 A CN101540357 A CN 101540357A CN 200810102198 A CN200810102198 A CN 200810102198A CN 200810102198 A CN200810102198 A CN 200810102198A CN 101540357 A CN101540357 A CN 101540357A
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Abstract
The invention provides a growth method for controlling the nucleation of self-organization In-Ga-As quantum dots, which is characterized by comprising the following: step 1, choosing a substrate; step 2, depositing a buffer layer on the substrate by adopting a molecular beam epitaxy method or a metal-organic chemical vapor deposition method so as to isolate impurities and dislocation in the substrate and allow a growth surface to be leveler; step 3, depositing a stress buffering-reducing layer on the buffer layer so as to buffer and reduce strain between the buffer layer and In-Ga-As material; and step 4, sequentially depositing a first In-Ga-As layer, ultra-thin aluminum arsenide and a second In-Ga-As layer on the stress buffering-reducing layer, forming an In-Ga-As soakage layer and an In-Ga-As quantum-dot layer and finishing growth preparation.
Description
Technical field
The present invention relates to a kind of growing method of controlling nucleation of self-organization In-Ga-As quantum dots.More precisely, be in the process of growth quantum point, to introduce the growing method that a ultra-thin aluminium arsenide layer is regulated and control the nucleation process of quantum dot near the indium gallium arsenic material critical thickness that (2D-3D) changes from the layer growth to the island growth.
Background technology
Because the limited electronics in the nanometer quantum structure, photon presents very different physical connotation in many and the body material structure, very abundant new quantum appearance and effect, this is the electronics of new principle just also, the development of opto-electronic device provides new opportunity, as developing based on the different application target, work in the quantum well of different-waveband, quantum wire and quantum dot laser, modulator and detector etc., because the restriction of its multidimensional, produce lot of superiority, narrow emission live width is then arranged as quantum dot laser, the high modulation frequency, the advantageous characteristic that high-temperature stability and low-threshold power current density etc. are unique.
At present, be that the low-dimensional materials growths new technology of representative has obtained huge progress with molecular beam epitaxy technique and metal organic chemical vapor deposition technology etc., and successfully grown a series of nano structural materials.Through effort for many years, on the basis of these two kinds of technology, now developed multiple semiconductor-quantum-point preparation methods, conclude and get up to comprise " from top to bottom ", " from bottom to top " and two kinds of technologies of preparing that combine.Wherein the method for " from top to bottom " is to utilize electronics, ion or optics Micrometer-Nanometer Processing Technology, directly prepares quantum dot by etching.The quantum dot of this method preparation, though its size, shape and controllable density, the contaminating impurity of introducing in interface damage that processing brings and the technical process etc. differ greatly its relevant device performance and theory expectation.And this method is with after the method for " from bottom to top " combines, though improved device performance to a certain extent, but have certain distance with theory expectation." from bottom to top " method generally is called the self-organizing growth method again.This growing method is to utilize SK (Stranski-Krastanow) growth pattern growth quantum point on the substrate of lattice mismatch, and this quantum dot does not almost have dislocation, has electricity and optical property preferably.But the quantum dot of self-organizing method growth, because the randomness of quantum dot nucleation Sk transformation (promptly being converted to island growth pattern (2D-3D)) process from the layer growth pattern, generally all have certain distribution of sizes, this can cause the inhomogeneous broadening (20-100meV) of quantum dot spectrum.This size inhomogeneous broadening effect has been destroyed the excellent properties that the zero dimension electron energy state structure (the δ function density of states) based on the quantum dot uniqueness is brought, and becomes one of hot research in recent years so how to improve the uniformity of quantum dot distribution of sizes.
In addition, the low-density quantum dot can be used for preparing single-photon source and single-electron device, also becomes one of Recent study focus.And near photon energy single-photon source of (long wavelength) 1.3 μ m and 1.5 μ m especially is widely used in the quantum communication field.And adopt low growth rate, low arsenic is pressed and lower growth temperature can realize the low-density quantum dot of room temperature fluorescence about 1.3 μ m, but its growth conditions scope is extremely narrow, the variation of trickle growth conditions just may cause the failure of testing.
Growing method based on the In-Ga-As quantum dots sample of prior art growth also mainly is divided into two classes, see also Fig. 1 (a) and (b) shown in prior art structure A sample and structure B structures of samples schematic diagram.The growth step of prior art structure A sample is: go up the method deposit resilient coating 20 ' that adopts molecular beam epitaxy or metal organic chemical vapor deposition at substrate 10 '; Go up deposit stress relief layer 30 ' at resilient coating 20 '; Go up deposit indium gallium arsenic material at stress relief layer 30 ' and form indium gallium arsenic soakage layer 40 and In-Ga-As quantum dots layer 50 '.The growth step of prior art structure B sample is similar to the step of Fig. 1 (a), just lacks the step of deposit stress relief layer 30 ', from Fig. 1 (a) and (b) as can be seen quantum dot layer 50 ' be uneven projection.During based on prior art growth In-Ga-As quantum dots, by the growth conditions (as growth temperature, growth rate and arsenic pressure etc.) of regulating quantum dot and size, shape, density and the component etc. that growth structure (dot-in-well structure or laminated quantum-dot structure etc.) can be regulated and control quantum dot within the specific limits.Such as the method that adopts growth to pause, the size that can utilize quantum dot is from limiting the uniformity that effectiveness improves the quantum dot distribution of sizes; Adopt laminated quantum-dot structure also can obtain the quantum dot of narrow spectrum in addition.And near this method of in the process of growth quantum point, introducing a ultra-thin aluminium arsenide layer provided herein (thickness of indium gallium arsenic is in the critical thickness that 2D-3D changes time introduce ultra-thin aluminium arsenide layer), having utilized the mobility of aluminium atom to be lower than the mobility of gallium atom and aluminium atom adds indium gallium arsenic surface and can make surface energy improve this two character, change the surface appearance of growth front, make that being converted to island growth pattern (2D-3D) from the layer growth pattern changes in advance, and impel the 3D island, thereby regulate the nucleation density of quantum dot and the uniformity that improves the quantum dot distribution of sizes in rich aluminium zones homogeneous nucleation.In addition because the method can be controlled the 3D island in the preferential nucleation in rich aluminium district, so can measure the selectable range that this additional parameter is widened the growth conditions of the low-density quantum dot of room temperature fluorescence about 1.3 μ m by the introducing of controlling ultra-thin aluminium arsenide layer.This method thought novelty, corresponding growth technique are convenient to grasp and optimize.
Summary of the invention
The purpose of this invention is to provide a kind of growing method of controlling nucleation of self-organization In-Ga-As quantum dots, it can be implemented in In
xGa
1-xIn grows on the As growth front
yGa
1-yThe change of quantum dot nucleation mechanism (0≤x＜y≤1) impels the quantum dot homogeneous nucleation during As quantum dot, thereby realizes the raising of self-organization In-Ga-As quantum dots dimensional homogeneity and the regulation and control of nucleation density thereof.
The invention technical scheme is:
The invention provides a kind of growing method of controlling nucleation of self-organization In-Ga-As quantum dots, it is characterized in that, comprise the steps:
Step 1: select a substrate;
Step 2: on substrate, adopt the method deposit resilient coating of molecular beam epitaxy or metal organic chemical vapor deposition, impurity and dislocation in coming at the bottom of the isolation liner, and make growing surface more smooth;
Step 3: deposit stress relief layer on resilient coating, extenuate the strain between resilient coating and the indium gallium arsenic material;
Step 4: deposit ground floor indium gallium arsenic, ultra-thin aluminium arsenide and second layer ingaas layer in regular turn on the stress relief layer, form indium gallium arsenic soakage layer and In-Ga-As quantum dots layer, finish the preparation of growth.
Wherein said substrate is GaAs or indium phosphide or silicon substrate.
The chemical formula of wherein said ingaas layer is In
xGa
1-xAs, wherein 0＜x≤1.
It is roughly the same to be converted to the critical thickness of island growth pattern from the layer growth pattern when thickness of the ground floor indium gallium arsenic of wherein said deposit in regular turn and indium gallium arsenic material are grown on the stress relief layer.
The thickness of wherein said ultra-thin aluminium arsenide is less than 1ML.
The invention provides a kind of growing method of controlling nucleation of self-organization In-Ga-As quantum dots, it is characterized in that, comprise the steps:
Step 1: select a substrate;
Step 2: on substrate, adopt the method deposit resilient coating of molecular beam epitaxy or metal organic chemical vapor deposition, impurity and dislocation in coming at the bottom of the isolation liner, and make growing surface more smooth;
Step 3: deposit ground floor indium gallium arsenic, ultra-thin aluminium arsenide and second layer ingaas layer in regular turn on resilient coating, form indium gallium arsenic soakage layer and In-Ga-As quantum dots layer, finish the preparation of growth.
Wherein said substrate is GaAs or indium phosphide substrate.
Wherein said indium gallium arsenic, its chemical formula is In
xGa
1-xAs, wherein 0＜x≤1.
It is roughly the same to be converted to the critical thickness of island growth pattern from the layer growth pattern when thickness of the ground floor indium gallium arsenic of wherein said deposit in regular turn and indium gallium arsenic material are grown on the resilient coating.
The thickness of wherein said ultra-thin aluminium arsenide is less than 1ML.
The meaning that the present invention has:
The present invention adopts this simple mode of the ultra-thin aluminium arsenide layer of introducing that a kind of new method that changes nucleation of self-organization In-Ga-As quantum dots mechanism is provided, for size, shape and the density etc. of controlling quantum dot provide a new adjustable parameter, improve the uniformity of self-organization In-Ga-As distribution of sizes, and widened the selectable range of the growth conditions of realization low-density quantum dot (room temperature fluorescence is positioned at about 1.3 μ m).
Description of drawings
For further specifying concrete technology contents of the present invention, below in conjunction with embodiment and accompanying drawing describes in detail as after, wherein:
Fig. 1 (a) is a prior art structure A structures of samples schematic diagram; (b) be prior art structure B structures of samples schematic diagram;
Fig. 2 is a first embodiment of the invention structures of samples schematic diagram;
Fig. 3 is a second embodiment of the invention structures of samples schematic diagram;
Fig. 4 (a) is the atomic force photo (2 * 2 μ m2) of prior art structure A sample and the block diagram that highly distributes accordingly; (b) be the atomic force photo (2 * 2 μ m2) of first embodiment of the invention sample and the block diagram that highly distributes accordingly;
Fig. 5 (a) is that the size scale of the medium and small quantum point set of prior art structure A sample distributes (closed square) with theoretical scaling function f
1(u) comparison of (dotted line); (b) be that the size scale of big quantum point set among the prior art sample B distributes (closed square) with theoretical scaling function f
3(u) comparison of (dotted line);
Fig. 6 is that the size scale of all quantum dots among the present invention distributes (closed square) with theoretical scaling function f
3(u) comparison of (dotted line);
Fig. 7 is the low temperature fluorescence spectrum (80K) of second embodiment of the invention sample, and dotted line is represented the Gauss curve fitting peak among the figure;
Fig. 8 is the low temperature fluorescence spectrum (80K) of prior art structure B sample, and dotted line is represented the Gauss curve fitting peak among the figure.
Embodiment
See also shown in Figure 2ly, be the first embodiment of the present invention.
A kind of growing method of controlling nucleation of self-organization In-Ga-As quantum dots of the present invention comprises the steps:
Step 1: select a substrate 10, described substrate 10 is GaAs (a 001) substrate;
Step 2: the method grown buffer layer 20 that on substrate 10, adopts molecular beam epitaxy, being grown in the Riber 32p molecular beam epitaxial device of this routine sample carried out, described resilient coating 20 is the thick GaAs buffer layer of 400nm, its growth temperature is 610 ℃, the GaAs buffer layer of high growth temperature can make growing surface smooth as far as possible, and can reduce in the backing material impurity and dislocation to the influence of the photoelectric property of quantum dot layer as far as possible;
Step 3: on resilient coating 20, deposit stress relief layer 30, described stress relief layer 30 is the thick In of 2nm
0.15Ga
0.85As stress relief layer, its growth temperature are reduced to 510 ℃, and the growth of this stress relief layer can reduce the interchange reaction between phosphide atom and the gallium atom;
Step 4: on stress-buffer layer 30, deposit ground floor indium gallium arsenic, ultra-thin aluminium arsenide and second layer ingaas layer form indium gallium arsenic soakage layer 40 and In-Ga-As quantum dots layer 50 in regular turn, finish the preparation of growth.Described indium gallium arsenic, (chemical formula is In to the indium arsenide of electing as
xGa
1-xAs, x=0), the thickness of the ground floor indium gallium arsenic of described deposit in regular turn is 0.9ML, the thickness of described ultra-thin aluminium arsenide is 0.02ML, the thickness of described second layer indium gallium arsenic is 0.2ML, and this step growth temperature still is 510 ℃, and the deposition rate of indium gallium arsenic and aluminium arsenide is 0.01ML/s.
As is all adopted in the growth of each step of present embodiment
2Air pressure, and remain on 3.6 * 10 always
-6Torr.
For comparison, the prior art structure A sample (seeing also Fig. 1 (b)) of also having grown and being similar to the present embodiment sample structure, every one-step growth condition of two samples is the same, so that relatively.
Before the growth sample, determined in advance by the reflected high energy electron diffraction device (RHEED) that is assemblied on the molecular beam epitaxial device, when underlayer temperature is 510 ℃, 2nm-In
0.15Ga
0.85The critical thickness that the last indium arsenide material of As/GaAs 2D-3D changes is between 0.9ML-1.0ML.
After sample grown is finished, underlayer temperature is cooled to room temperature rapidly, takes out sample and it is carried out the atomic force measurement, the result provides in Fig. 4.
According to Fig. 4, the difference of the surface topography of two samples is very big as can be seen.The surperficial quantum dot of prior art structure A sample is made of two groups of quantum dots: one group of little quantum dot that is height at 0.9-3.5nm, density is about 9.7 * 10
9Cm
-2, another group is the big quantum dot of height at 7-14nm, density is about 5.3 * 10
8m
-2And the surperficial quantum dot of first embodiment of the invention sample only comprises a pattern, and its density is about 5.5 * 10
9Cm
-2, the available Gaussian peak that highly distributes comes match.
Introduce the dynamics scaling theory and analyze the nucleation process of two samples.According to the nucleation theory of classics, if the distribution of sizes on 3D island is obeyed certain scale rule (scalinglaw), then
N(u)＝(θ/<s>
2)f(u)
In the formula, θ is effective coverage of epitaxial loayer, u=s/＜s 〉,＜s〉be the average-size on 3D island, N (u) is the number density that is of a size of the 3D island of s, f (u) is a scaling function, only depends on the size of u.When u=1, f (u) reaches maximum.Originally the dynamics scaling theory is used to describe the nucleation process on 2D island, and has obtained confirmation in theoretical modeling in homoepitaxy and heteroepitaxy and the experimental study.As long as the distribution of sizes of the quantum dot that comparative experiments is measured can draw the size that critical nucleation is counted i with theory function.In addition through deriving, when
C wherein
iAnd a
iIt is constant.There is the people that the method is applied in the 3D island growth analysis of heterojunction semiconductor simultaneously, and thinks that s is the volume on 3D island.
Fig. 5 (a) and the size scale that (b) has provided prior art structure A sample medium and small quantum dot and big quantum dot respectively distribute.The maximum place that the size scale of little quantum dot distributes, u＜1, its shape is between the scaling function of i=0 and i=1.The critical nucleation of a system is counted i=0, in case mean that the In atom deposits to growing surface then spontaneous nucleation at once.Such behavior may be because the existence of defective in the growing surface, as step etc.And the size scale of big quantum dot distributes and the differing fully of little quantum dot in the prior art structure A sample, and its shape is near theory function f
3(u).The difference that the size scale of size quantum dot distributes shows that both are in different evolution developing stage and impossible nucleation simultaneously.
The size scale of the quantum dot in the first embodiment of the invention sample is distributed among Fig. 4 and provides, and its shape also is the function of a class i=3, and all quantum dots all are in the same evolution stage in this explanation first embodiment of the invention sample, simultaneously nucleation.
The difference that the difference of the atomic force pattern visualize of quantum dot and yardstick scale thereof distribute in prior art structure A sample and the first embodiment of the invention sample, illustrate that ultra-thin aluminium arsenide has changed self-organization In-Ga-As quantum dots really and changed the nucleation process of primary stage at 2D-3D, changed the nucleation density of quantum dot, and impel the quantum dot homogeneous nucleation, improved the uniformity of quantum dot distribution of sizes.
See also Fig. 3, be the second embodiment of the present invention (wherein second embodiment be basically the same as those in the first embodiment part adopted same numeral).
A kind of growing method of controlling nucleation of self-organization In-Ga-As quantum dots of the present invention comprises the steps:
Step 1: select a substrate 10, described substrate 10 is GaAs (a 001) substrate;
Step 2: on substrate 10, adopt molecular beam epitaxy deposit resilient coating 20, being grown in the Riber 32p molecular beam epitaxial device of this routine sample carried out, described resilient coating 20 is the thick GaAs buffer layer of 400nm, its growth temperature is 610 ℃, the GaAs buffer layer of high growth temperature can make growing surface smooth as far as possible, and can reduce in the backing material impurity and dislocation to the influence of the photoelectric property of quantum dot layer as far as possible;
Step 3: deposit ground floor indium gallium arsenic, ultra-thin aluminium arsenide and second layer ingaas layer in regular turn on resilient coating 20 form indium gallium arsenic soakage layer 40 and In-Ga-As quantum dots layer 50.Described indium gallium arsenic, (chemical formula is In to the indium arsenide of electing as
xGa
1-xAs, x=0), the thickness of the ground floor indium gallium arsenic of described deposit in regular turn is 1.6ML, the thickness of described ultra-thin aluminium arsenide is 0.02ML, the thickness of described second layer indium gallium arsenic is that this step of 0.3ML growth temperature still is 490 ℃, indium gallium arsenic deposition rate is 0.00375ML/s, and the deposition rate of aluminium arsenide is 0.01ML/s.
After the growth of completing steps 3, in regular turn when growth temperature is 490 ℃ continued growth the thick In of 5nm
0.15Ga
0.85The GaAs low temperature cap rock that As and 10nm are thick, then the temperature GaAs high temperature wall of 240nm that risen to 610 ℃ of continued growths is finished the preparation of sample.Its purpose of this one-step growth is to make sample to be more conducive to study the research of the optical property of quantum dot of the present invention.
As is all adopted in the growth of each step of present embodiment
2Air pressure removes As in the step 3
2Air pressure remains on 0.9 * 10
-6Outside the Torr, other steps all remain on 4 * 10
-6About Torr.
For comparison, the prior art structure B sample (seeing also Fig. 1 (b)) of also having grown and being similar to the present embodiment sample structure, every one-step growth condition of two samples is the same, so that relatively.
In the growth sample, observe by the reflected high energy electron diffraction device (RHEED) that is assemblied on the molecular beam epitaxial device, know when underlayer temperature is 490 ℃ that the critical thickness that indium arsenide material 2D-3D changes on the GaAs is slightly larger than 1.6ML.
After sample grown is finished, underlayer temperature is cooled to room temperature rapidly, takes out sample and it is carried out plane transmission Electronic Speculum and low-temperature photoluminescence measurement (80K).
Low growth temperature, low growth rate and low arsenic press strip spare have been adopted in the growth of indium gallium arsenic soakage layer 40 and In-Ga-As quantum dots layer 50 in the present embodiment, and its purpose is to study the effect of growing method aspect growth long wavelength low-density quantum dot that the present invention controls nucleation of self-organization In-Ga-As quantum dots.
After sample carried out plane transmission Electronic Speculum test, find that the surface density of quantum dot in the second embodiment of the invention sample is about 5 * 10
9Cm
-2, and the surface density of quantum dot is about 1.5 * 10 in the prior art structure B sample
10Cm
-2As seen the latter's density is about the former three times, and the introducing of ultra-thin aluminium arsenide has effectively reduced the surface density of quantum dot.
Fig. 7 has provided the low temperature fluorescence spectrum (80K of second embodiment of the invention sample, exciting power is 10mW), find that through Gauss curve fitting spectrum comprises E0 (peak position=1.26 μ m, halfwidth=28meV) and two peaks of E1 (peak position=1.18 μ m), by with high exciting power under spectrum relatively, find that E0 is that quantum dot ground states is luminous, E1 is that quantum dot excitation state is luminous, and this illustrates that only there is the quantum dot of distribution as unimodal in the second embodiment sample.
Fig. 8 has provided the low temperature fluorescence spectrum (80K of prior art structure B sample, exciting power is 10mW), find through Gauss curve fitting, spectrum comprises E0 (peak position=1.27 μ m, halfwidth=29meV), E`0 (peak position=1.16 μ m, halfwidth=17meV), E1 (peak position=1.19 μ m) and two peaks of E`1 (peak position=1.16 μ m), by with high exciting power under spectrum relatively, it is luminous to find that E0 and E`0 are respectively the ground state of two quantum point sets in the sample, it is luminous that E1 and E`1 are respectively the excitation state of two quantum point sets in the sample, and distribution of quantum dot is a bimodulus in this explanation prior art structure B sample.
Through above analysis, the introducing that ultra-thin aluminium arsenide can be described has reduced the surface density of quantum dot really effectively and has improved the uniformity of quantum dot distribution of sizes, helps realizing long wavelength's low-density quantum dot.
Though described the present invention in detail with reference to the foregoing description, should be appreciated that the present invention is not limited to the disclosed embodiments, for the technical staff of this professional domain, can carry out various changes to its form and details.This invention is intended to contain the interior various distortion of spirit and scope of appended claims.
Claims (10)
1, a kind of growing method of controlling nucleation of self-organization In-Ga-As quantum dots is characterized in that, comprises the steps:
Step 1: select a substrate;
Step 2: on substrate, adopt the method deposit resilient coating of molecular beam epitaxy or metal organic chemical vapor deposition, impurity and dislocation in coming at the bottom of the isolation liner, and make growing surface more smooth;
Step 3: deposit stress relief layer on resilient coating, extenuate the strain between resilient coating and the indium gallium arsenic material;
Step 4: deposit ground floor indium gallium arsenic, ultra-thin aluminium arsenide and second layer ingaas layer in regular turn on the stress relief layer, form indium gallium arsenic soakage layer and In-Ga-As quantum dots layer, finish the preparation of growth.
2, the growing method of control nucleation of self-organization In-Ga-As quantum dots according to claim 1 is characterized in that, wherein said substrate is GaAs or indium phosphide or silicon substrate.
3, the growing method of control nucleation of self-organization In-Ga-As quantum dots according to claim 1 is characterized in that, the chemical formula of wherein said ingaas layer is In
xGa
1-xAs, wherein 0＜x≤1.
4, the growing method of control nucleation of self-organization In-Ga-As quantum dots according to claim 1, it is characterized in that it is roughly the same to be converted to the critical thickness of island growth pattern from the layer growth pattern when thickness of the ground floor indium gallium arsenic of wherein said deposit in regular turn and indium gallium arsenic material are grown on the stress relief layer.
5, the growing method of control nucleation of self-organization In-Ga-As quantum dots according to claim 1 is characterized in that, the thickness of wherein said ultra-thin aluminium arsenide is less than 1ML.
6, a kind of growing method of controlling nucleation of self-organization In-Ga-As quantum dots is characterized in that, comprises the steps:
Step 1: select a substrate;
Step 2: on substrate, adopt the method deposit resilient coating of molecular beam epitaxy or metal organic chemical vapor deposition, impurity and dislocation in coming at the bottom of the isolation liner, and make growing surface more smooth;
Step 3: deposit ground floor indium gallium arsenic, ultra-thin aluminium arsenide and second layer ingaas layer in regular turn on resilient coating, form indium gallium arsenic soakage layer and In-Ga-As quantum dots layer, finish the preparation of growth.
7, the growing method of control nucleation of self-organization In-Ga-As quantum dots according to claim 6 is characterized in that, wherein said substrate is GaAs or indium phosphide substrate.
8, the growing method of control nucleation of self-organization In-Ga-As quantum dots according to claim 6 is characterized in that, wherein said indium gallium arsenic, and its chemical formula is In
xGa
1-xAs, wherein 0＜x≤1.
9, the growing method of control nucleation of self-organization In-Ga-As quantum dots according to claim 6, it is characterized in that it is roughly the same to be converted to the critical thickness of island growth pattern from the layer growth pattern when thickness of the ground floor indium gallium arsenic of wherein said deposit in regular turn and indium gallium arsenic material are grown on the resilient coating.
10, the growing method of control nucleation of self-organization In-Ga-As quantum dots according to claim 6 is characterized in that, the thickness of wherein said ultra-thin aluminium arsenide is less than 1ML.
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| CN109844969B (en) * | 2016-07-18 | 2022-02-01 | 剑桥企业有限公司 | Scalable quantum confinement device |
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| US11081521B2 (en) | 2018-03-13 | 2021-08-03 | Soitec | Process for manufacturing a plurality of crystalline semiconductor islands having a variety of lattice parameters |
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