Summary of the invention
Liquid crystal indicator of the present invention is characterized by, and possesses: the liquid crystal of by the 1st transparency carrier and the 2nd transparency carrier clamping; Be configured on above-mentioned the 1st transparency carrier, drive the 1st and the 2nd electrode of above-mentioned liquid crystal; Be configured in one or more films on above-mentioned the 1st electrode; And be configured in one or more films on above-mentioned the 2nd electrode, make between above-mentioned the 1st electrode and above-mentioned liquid crystal and the stacked relationship between the 2nd electrode and above-mentioned liquid crystal consistent.
In addition, liquid crystal indicator of the present invention is characterized by, and possesses: the liquid crystal of by the 1st transparency carrier and the 2nd transparency carrier clamping; Be configured on above-mentioned the 1st transparency carrier, drive the 1st and the 2nd electrode of above-mentioned liquid crystal; Be configured in one or more films on above-mentioned the 1st electrode; Be configured in one or more films on above-mentioned the 2nd electrode, in when, between the above-mentioned the 1st and the 2nd electrode, electric field having occured, make be present between above-mentioned the 1st electrode and liquid crystal, with the accumulation of the charged electric charge in the interface of above-mentioned film, and be present between above-mentioned the 2nd electrode and liquid crystal, equate substantially with the accumulation of the charged electric charge in the interface of above-mentioned film.
In addition, liquid crystal indicator of the present invention is characterized in that: also possess: be configured in above-mentioned the 1st electrode on above-mentioned the 1st substrate; Cover the 1st inoranic membrane of above-mentioned the 1st electrode; Be configured on above-mentioned the 1st inoranic membrane, alternatively have above-mentioned the 2nd electrode of wire section and gap section; Be configured in the 2nd inoranic membrane on above-mentioned the 2nd electrode; And the alignment films that covers above-mentioned the 2nd inoranic membrane.
In addition, liquid crystal indicator of the present invention also has following feature: in the above-described configuration, above-mentioned the 2nd inoranic membrane, only be configured in the above-mentioned wire section of above-mentioned the 2nd electrode, above-mentioned alignment films covers above-mentioned the 1st inoranic membrane, above-mentioned the 2nd electrode and above-mentioned the 2nd inoranic membrane.
In addition, liquid crystal indicator of the present invention also has following feature: in the above-described configuration, above-mentioned the 2nd inoranic membrane is configured to the above-mentioned wire section of above-mentioned the 1st inoranic membrane, above-mentioned the 2nd electrode and above-mentioned gap section are covered.
In addition, the present invention is characterized in that: in the above-described configuration, above-mentioned the 1st inoranic membrane and above-mentioned the 2nd inoranic membrane are formed by same material.
In addition, the present invention is characterized in that: in the above-described configuration, above-mentioned the 1st inoranic membrane and above-mentioned the 2nd inoranic membrane contain and comprise nitrogen compound.
In addition, the present invention is characterized in that: in the above-described configuration, above-mentioned the 1st inoranic membrane and the 2nd inoranic membrane contain the oxygen containing compound of bag.
In addition, liquid crystal indicator of the present invention is the above-mentioned the 1st or the 2nd described liquid crystal indicator of technical scheme, it is characterized in that: possess: above-mentioned the 1st electrode that is formed at above-mentioned the 1st transparency carrier; Formed by the organic material with imide bond, cover the organic film of above-mentioned the 1st electrode; Be configured on above-mentioned organic film, alternatively have above-mentioned the 2nd electrode of wire section and gap section; And formed by the organic material with imide bond, cover the alignment films of above-mentioned wire section and the above-mentioned gap section of above-mentioned organic film, above-mentioned the 2nd electrode.
In addition, liquid crystal indicator of the present invention is characterized in that: also possess: above-mentioned the 1st electrode that is formed at above-mentioned the 1st transparency carrier; Formed by polyamide-based organic material, cover the organic film of above-mentioned the 1st electrode; Be configured on above-mentioned organic film, alternatively have above-mentioned the 2nd electrode of wire section and gap section; And formed by polyamide-based organic material, cover the alignment films of above-mentioned wire section and the above-mentioned gap section of above-mentioned organic film, above-mentioned the 2nd electrode.
In addition, the present invention is characterized in that: in the above-described configuration, above-mentioned organic film and alignment films are formed by same material.
In addition, the present invention is characterized in that: in the above-described configuration, the above-mentioned the 1st and the 2nd electrode is respectively transparency electrode.
In addition, the manufacture method of liquid crystal indicator of the present invention is characterized in that: comprise following operation: the operation that forms above-mentioned the 1st electrode at above-mentioned the 1st substrate; Form the operation of the 1st inoranic membrane that covers above-mentioned the 1st electrode; Form the operation of the transparent conductive material that covers above-mentioned the 1st inoranic membrane; Form the operation of the 2nd inoranic membrane that covers above-mentioned transparent conductive material; Make simultaneously above-mentioned transparent conductive material and above-mentioned the 2nd inoranic membrane graphical, form the operation of above-mentioned the 2nd electrode of the wire section alternatively have above-mentioned transparent conductive material and the 2nd inoranic membrane lamination are got up and gap section; Form the operation of the alignment films that covers above-mentioned the 2nd electrode; And, the 2nd transparency carrier is pasted on above-mentioned the 1st transparency carrier, liquid crystal is sealing into operation between above-mentioned the 1st transparency carrier and above-mentioned the 2nd transparency carrier.
in addition, the manufacture method of liquid crystal indicator of the present invention is characterized in that: remove outside above-mentioned operation, also comprise: the operation that is formed on the wiring layer of the predetermined region extension that will form portion of terminal on above-mentioned the 1st transparency carrier, with the operation that forms the electrode on a part that covers this wiring layer, in the operation that forms above-mentioned the 1st inoranic membrane, above-mentioned the 1st inoranic membrane is formed, make and cover above-mentioned the 1st electrode, above-mentioned electrode is exposed, in the operation that forms above-mentioned transparent conductive material, above-mentioned transparent conductive material, be formed and cover above-mentioned the 1st inoranic membrane, and cover the above-mentioned electrode that exposes, make at the same time in above-mentioned transparent conductive material and above-mentioned the 2nd patterned operation of inoranic membrane, make above-mentioned the 2nd electrode remaining and remove at least above-mentioned the 2nd inoranic membrane on above-mentioned electrode.
In addition, the manufacture method of liquid crystal indicator of the present invention is characterized in that: also be included in the operation that above-mentioned the 1st transparency carrier forms above-mentioned the 1st electrode; Form the operation of the 1st inoranic membrane that covers above-mentioned the 1st electrode; Form the operation of above-mentioned the 2nd electrode that alternatively has wire section and gap section on above-mentioned the 1st inoranic membrane; Form to cover the operation of the 2nd inoranic membrane of the above-mentioned wire section of above-mentioned the 1st inoranic membrane, above-mentioned the 2nd electrode and above-mentioned gap section; Form the operation of the alignment films that covers above-mentioned the 2nd inoranic membrane; And, above-mentioned the 2nd transparency carrier is pasted on above-mentioned the 1st transparency carrier, liquid crystal is sealing into operation between above-mentioned the 1st transparency carrier and above-mentioned the 2nd transparency carrier.
In addition, the manufacture method of liquid crystal indicator of the present invention is characterized in that: in above-mentioned operation, the 2nd inoranic membrane forms with the CVD method.
In addition, the manufacture method of liquid crystal indicator of the present invention is characterized in that: in above-mentioned operation, the 2nd inoranic membrane forms with coating process.
In addition, the manufacture method of liquid crystal indicator of the present invention is characterized in that: in above-mentioned operation, the 2nd inoranic membrane forms with the printing of inorganic material.
In addition, the manufacture method of liquid crystal indicator of the present invention is characterized in that: in above-mentioned operation, the 1st inoranic membrane and the 2nd inoranic membrane are formed by identical material.
In addition, the manufacture method of liquid crystal indicator of the present invention also comprises: the operation that forms above-mentioned the 1st electrode at above-mentioned the 1st transparency carrier; Formation is formed by the organic material with imide bond, covers the operation of the organic film of above-mentioned the 1st electrode; Form the operation of above-mentioned the 2nd electrode that alternatively has wire section and gap section on above-mentioned organic film; Formation is formed by the inorganic material with imide bond, covers the operation of the alignment films of the above-mentioned wire section of above-mentioned organic film, above-mentioned the 2nd electrode and above-mentioned gap section; The operation of the above-mentioned alignment films that rubs; And, above-mentioned the 2nd transparency carrier is pasted above-mentioned the 1st transparency carrier, liquid crystal is sealing into operation between above-mentioned the 1st transparency carrier and above-mentioned the 2nd transparency carrier.
In addition, the manufacture method of liquid crystal indicator of the present invention also comprises: the operation that forms above-mentioned the 1st electrode at above-mentioned the 1st transparency carrier; Formation is formed by polyamide-based organic material, covers the operation of the organic film of above-mentioned the 1st electrode; Form the operation of above-mentioned the 2nd electrode that alternatively has wire section and gap section on above-mentioned organic film; Formation is formed by polyamide-based organic material, covers the operation of the alignment films of the above-mentioned wire section of above-mentioned organic film, above-mentioned the 2nd electrode and above-mentioned gap section; The operation of the above-mentioned alignment films that rubs; And, above-mentioned the 2nd transparency carrier is pasted above-mentioned the 1st transparency carrier, liquid crystal is sealing into operation between above-mentioned the 1st transparency carrier and above-mentioned the 2nd transparency carrier.
In addition, the manufacture method of liquid crystal indicator of the present invention is characterized in that: in above-mentioned operation, above-mentioned organic film and above-mentioned alignment films are formed by same material.
In addition, the manufacture method of liquid crystal indicator of the present invention is characterized in that: in above-mentioned operation, above-mentioned alignment films is with the printing formation of organic material.
In addition, the manufacture method of liquid crystal indicator of the present invention is characterized in that: in above-mentioned operation, the above-mentioned the 1st and the 2nd electrode is respectively transparency electrode.
If employing the present invention in the Liquid crystal disply device and its preparation method of FFS pattern, the displacement of the central potential by suppressing common electrode, prevents image retention, can realize showing the improvement of grade.
Embodiment
Below, describe referring to the plane formation of accompanying drawing to the liquid crystal indicator of example of the present invention.Fig. 1 shows the vertical view that the summary of the liquid crystal indicator of this example consists of.In addition, Fig. 2 is among a plurality of pixel PXL of the display part 10A that is formed at Fig. 1, only amplifies the vertical view that shows 3 pixel PXL, shows the formation of carrying out work by means of the FFS pattern.Fig. 3 is among a plurality of terminal TL of the portion of terminal 10T of Fig. 1, amplifies the vertical view that shows 1 terminal.In Fig. 1~Fig. 3, for convenience of explanation, only show main inscape.
In addition, in the explanation that following plane consists of, for with contact hole H1~H5, and the formation of peristome H6 is replenished complete, although also all carried out reference for gate insulating film 12, interlayer dielectric 15, passivating film 17 and planarization film 18, but, for their stacked relationship, will provide in the explanation of the manufacture method of liquid crystal indicator described later.
As shown in Figure 1, in this liquid crystal indicator, dispose: dispose the display part 10A of a plurality of pixel PXL, with the portion of terminal 10T of a plurality of terminal TL that are connected outside connection use.In display part 10A, as shown in Figure 2, and be supplied to gate signal and be supplied in other words the grid line 13 of pixel selection signal and be supplied to the intersection point that source signal is supplied to the source line 16S of display in other words and configure accordingly each pixel PXL.
On the 1st transparency carrier 10 of each pixel PXL, dispose the pixel transistor TR that grid line 13 is used as the thin film transistor (TFT) etc. of gate electrode.The source of pixel transistor TR is connected on the line 16S of source by the contact hole H1 that is formed at gate insulating film 12 and interlayer dielectric 15, and its leakage is connected on drain electrode 16D by the contact hole H2 that is formed at gate insulating film 12 and interlayer dielectric 15.Drain electrode 16D by the contact hole H3 that is formed at passivating film 17 and the contact hole H5 that is formed at planarization film 18, is connected with pixel electrode 20.
Pixel electrode 20 is insulated film 21 and has covered, and disposes common electrode 22 on dielectric film 21.Common electrode 22 has the shape that a plurality of wire 22E of section and the gap 22S of section alternatively extend abreast.Common electrode 22 by contact hole (not shown), is connected with near the common electrode line (not shown) that is supplied to common potential that extends the end of display part 10A.
In addition, the wire 22E of section of pixel electrode 20, dielectric film 21, common electrode 22 adopts the way of getting up according to this order lamination, forms by the maintenance electric capacity that keeps source signal during certain.In addition, also can be therewith different, form is connected with the leakage of pixel transistor TR, by keeping during certain after source signal its another maintenance electric capacity (not shown) for past pixel electrode 20.
On the other hand, at the terminal TL of portion of terminal 10T, as shown in Figure 3, and on the 1st transparency carrier 10, the wiring layer 16T that configuration is extended from the pixel PXL of display part 10A etc. to portion of terminal 10T.Wiring layer 16T for example, connects with the source line 16S of display part 10A.On the part of wiring layer 16T, by being formed at the contact hole H4 of passivating film 17, be connected with electrode 20T.The dielectric film 21 that electrode 20T is had peristome H6 has covered, by peristome H6, be connected with the outside terminal (not shown) of FPC (flexible printed circuit), the COG (glass top chip) etc. that extend from the driving circuit (not shown) of outside.
In the pixel PXL of above-mentioned formation, corresponding with the pixel selection signal of supplying with from grid line 13, pixel transistor TR becomes and is conducting, by source line 16S and pixel transistor TR display for toward pixel electrode 20.At this moment, between the wire 22E of section of pixel electrode 20 and common electrode 22, will produce electric field along the horizontal direction substantially of the 1st transparency carrier 10 accordingly with display, direction of orientation and this electric field of liquid crystal (not shown) are changed accordingly, just can carry out thus and the control that shows relevant optical mode.On the other hand, for terminal TL, supply with the driving signal of pixel selection signal, display etc. from driving circuit (not shown) by FPC etc.
Example 1
Below, describe referring to the manufacture method of sectional view to the liquid crystal indicator of example 1.Fig. 4 (A)~Fig. 7 (A) shows the pixel PXL of display part 10A of the liquid crystal indicator of example 1.In addition, Fig. 4 (B)~Fig. 7 (B) shows the section of the terminal TL of portion of terminal 10T.In addition, in Fig. 4~Fig. 7, give and with reference to same label for those inscapes identical with Fig. 1~Fig. 3 and inscape shown in Figure 17.
At first, as shown in Fig. 4 (A) and Fig. 4 (B), in the 1st transparency carrier 10 of display part 10A, to form the zone of pixel transistor TR again in the formation zone that is pixel PXL, form active layer 11.On the 1st transparency carrier 10, form to cover the gate insulating film 12 that active layer 11 ground extend at portion of terminal 10T.With the overlapping gate insulating film 12 of active layer 11 on form grid line 13.In addition, although out not shown, near the gate insulating film 12 the end of display part 10A, form the common electrode line that is supplied to common potential.
In display part 10A and portion of terminal 10T, on gate insulating film 12, cover dielectric film 15 between grid line 13 and common electrode line layering of relief.On the interlayer dielectric 15 of display part 10A, form the source line 16S that is connected with the source of active layer 11 by contact hole H1, and form the drain electrode 16D that is connected with the leakage of active layer 11 by contact hole H2.
In addition, on the interlayer dielectric 15 of portion of terminal 10T, form the wiring layer 16T that extends from display part 10A.Source line 16S, drain electrode 16D and wiring layer 16T form simultaneously as same layer, for example, are the laminated body according to the order formation of titanium, aluminium, titanium.On interlayer dielectric 15, cover source line 16S, drain electrode 16D and wiring layer 16T ground formation passivating film 17.Passivating film 17, by for example under the environment of 300~400 ℃ the silicon nitride film of film forming form.
Then, adopt passivating film 17 is carried out way take resist layer (not shown) as the dry etching of mask, at the passivating film 17 of display part 10A, the contact hole H3 of drain electrode 16D is exposed in formation.Meanwhile, at the passivating film 17 of portion of terminal 10T, form the contact hole H5 that exposes wiring layer 16T.
Then, after having removed above-mentioned resist layer, in contact hole H3, H4 and on passivating film 17, the planarization film 18 of their organic film of formation covering etc.Then, adopt planarization film 18 is carried out way take other resist layer (not shown) as the dry etching of mask, the contact hole H4 of drain electrode 16D is exposed in formation in contact hole H3.On the other hand, in portion of terminal 10T, remove planarization film 18, wiring layer 16T is exposed again.
Then, form from the planarization film 18 pixel electrode 20 that extends in the contact hole H4 and be connected with drain electrode 16D.Pixel electrode 20 is examples of the 1st electrode of the present invention.In addition, meanwhile, in portion of terminal 10T, form the electrode 20T that is connected to wiring layer 16T by contact hole H5.Electrode 20T is an example of electrode of the present invention.Pixel electrode 20 and electrode 20T can be by means of formation and graphical formation of the transparent conductive material of ITO, IZO etc.The film thickness of pixel electrode 20 and electrode 20T it is desirable to the 100nm left and right.
Then, on the planarization film 18 of display part 10A, form the dielectric film 21 that covers pixel electrode 20.Meanwhile, in portion of terminal 10T, on passivating film 17, form the dielectric film 21 of coated electrode 20T.Dielectric film 21 is formed by inoranic membrane, for example, is formed by the silicon nitride film of film formation at low temp under the environment of 200 ℃ of left and right, and the wire 22E of section of common electrode 22 between, be formed the film thickness that forms best maintenance electric capacity, for example, the film thickness of 2 microns~4 microns left and right.This dielectric film 21 is examples of the 1st inoranic membrane of the present invention.
Then, form the resist layer (not shown) be provided with the overlapping peristome such as electrode 20T on dielectric film 21.Then, adopt take this resist layer as mask, carry out the way to the dry etching of dielectric film 21, be formed on the peristome H6 that exposes electrode 20T in the contact hole H5 of portion of terminal 10T.
Then, after having removed above-mentioned resist layer, as shown in Fig. 5 (A) and Fig. 5 (B), form the transparent conductive material 22A of ITO, the IZO etc. of whole of the dielectric film 21 that covers display part 10A and portion of terminal 10T.
Then, whole the ground that covers the transparent conductive material 22A of display part 10A and portion of terminal 10T forms the inoranic membrane 23A that is formed by silicon nitride film etc.The formation of inoranic membrane 23A, the coating process of available CVD method or whirl coating, print process etc. etc. carries out.The film thickness of inoranic membrane 23A, although be not particularly limited,, if consider deterioration by the friction workability of carrying out to the 1st alignment films 24 of the generations such as step difference, be preferably thinner, for example, can become approximately below 50nm.In addition, the said dielectric film 21 in inoranic membrane 23A and top, although can be also silicon nitride film inoranic membrane in addition,, it is desirable to form inoranic membrane 23A and dielectric film 21 with identical material.
Then, as shown in Fig. 6 (A) and Fig. 6 (B), graphical to carry out to the dry etching that inoranic membrane 23A and dielectric film 21 carry out take resist layer (not shown) as mask.Here, resist layer only covers the predetermined zone of the wire 22E of section that will form common electrode 22.
By means of this, on dielectric film 21, form: it forms the common electrode 22 that alternatively configures in parallel with each other a plurality of wire 22E of section and the gap 22S of section, and forms the inoranic membrane 23 on the wire 22E of section that only is laminated to common electrode 22.This inoranic membrane 23 is not remaining on portion of terminal 10T.So, just can be graphical and form the common electrode 22 that lamination has inoranic membrane 23 simultaneously with dry etching operation.Inoranic membrane 23 is examples of the 2nd inoranic membrane of the present invention, and common electrode 22 is examples of the 2nd electrode of the present invention.
If first adopt formation transparent conductive material 22A and patterned method to form common electrode 22, then, adopt again to form the inoranic membrane 23A that covers common electrode 22 and carry out patterned way and only form inoranic membrane 23 on the wire 22E of section of common electrode 22, compare with this situation, in this example 1, due to can be graphical and form the common electrode 22 that lamination has inoranic membrane 23 simultaneously with dry etching operation, therefore can simplify manufacturing process, suppress manufacturing cost.
Next, as shown in Fig. 7 (A) and Fig. 7 (B), form the 1st alignment films 24 that covers common electrode 22 and inoranic membrane 23.The 1st alignment films 24 is that resin etc. forms by polyimide.The frictional direction of the 1st alignment films 24 is said for the long side direction planarity ground of the wire 22E of section of common electrode 22 and is for example approximately tilted 5~10 °.The 1st alignment films 24 is examples of alignment films of the present invention.
Then, to the 1st transparency carrier 10, paste the 2nd transparency carrier 30, between them, enclose the liquid crystal LC of nematic crystal with positive dielectric constant anisotropy etc.In addition, at the 2nd transparency carrier 30, in advance with the 1st transparency carrier 10 side in opposite directions, form black matrix (not shown), color filter 31 and cover their the 2nd alignment films 32.The 2nd alignment films 32 is that resin etc. forms by polyimide.The frictional direction of the 2nd alignment films 32 is parallel for the frictional direction of the 1st alignment films 24.
Have again, in any one above-mentioned operation, at the 1st transparency carrier, with a light source BL side in opposite directions, form the 1st polaroid PL1.The axis of homology of the 1st polaroid PL1 is parallel for the frictional direction of the 1st alignment films 24.In addition, in any one above-mentioned operation, at the 2nd transparency carrier 30, with the 1st transparency carrier 10 in opposite directions a side not, form the 2nd polaroid PL2.The axis of homology of the 2nd polaroid PL2 intersects vertically for the axis of homology of the 1st polaroid PL1.
At last, comprise that by means of handles such as line and cut-outs the laminated body of the 1st transparency carrier 10 and the 2nd transparency carrier 30 is separated into a plurality of liquid crystal indicators.
In the liquid crystal indicator that forms in this wise, in display part 10A, if the stacked relationship of each layer till being conceived to from pixel electrode 20 to liquid crystal LC, the stacked relationship of each layer on the wire 22E of the section upper strata of common electrode 22 is consistent with the stacked relationship of each layer in the formation zone of the gap 22S of section.This is that to have benefited from that inoranic membrane 23 is laminated to the wire 22E of section of common electrode 22 upper and realize.
Below, referring to accompanying drawing unanimously describing this stacked relationship.Fig. 8 shows near the part enlarged drawing of the formation the 1st alignment films 24 in Fig. 7.As shown in Figure 8, in the formation zone of the wire 22E of section of common electrode 22, on the wire 22E of section, interface A between the wire 22E of section that is formed by the transparent conductive material of ITO etc. and the inoranic membrane 23 that formed by silicon nitride film etc., inoranic membrane 23 and be interface C between interface B, the 1st alignment films 24 and liquid crystal LC between the 1st alignment films 24 that forms such as resin by polyimide exist according to this order of narration.
On the other hand, in the formation zone of the gap of common electrode 22 22S of, the pixel electrode 20 that is formed by the transparent conductive material of ITO etc. and by the interface D between the inorganic film formed dielectric film 21 of silicon nitride film etc., dielectric film 21 and be interface E between the 1st alignment films 24 that forms such as resin by polyimide, and the 1st interface F between alignment films 24 and liquid crystal LC, exist according to this order of narration.In other words, the stacked relationship of the stacked relationship of the wire 22E of section of common electrode and the gap 22S of section is consistent.
Have benefited from this formation, in the potential difference (PD) owing to display and common potential, in the situation that produced electric field between the wire 22E of section of pixel electrode 20 and common electrode 22, the accumulation of the electric charge that each interface A, B, the C in the formation zone of the 22E of wire section is charged, and the charged accumulation of each interface D, E, F in the formation zone of the gap 22S of section will become equal substantially.In other words, will produce symmetry about two accumulations that form the electric charge in zone.Confirmed and irrespectively to have obtained this symmetry with each film thickness of dielectric film 21, inoranic membrane 23 and the 1st alignment films 24 by the experiment that the present inventor carries out.
In addition, under stacked relationship and the inconsistent situation of stacked relationship in the 22S of section of gap in the wire 22E of section of common electrode, in the potential difference (PD) owing to display and common potential, in the situation that produced electric field between the wire 22E of section of pixel electrode 20 and common electrode 22, above-mentioned two accumulations that form the electric charge in the zone, will produce along with passage of time difference, about two accumulations that form the electric charge in the zone, symmetry will be destroyed.Therefore, unnecessary DC component will be produced between the wire 22E of section of pixel electrode 20 and common electrode, the displacement of the central potential of best common potential will be produced.For example, in the energising of 10 hours, flicker becomes the center for the common potential of minimal the best, just has the variation of 150mV.Therefore, can say in the indeclinable situation in center that becomes by energising, flicker as the common potential of minimal the best, about two accumulations that form the electric charge in the zone, symmetry just becomes as equating substantially.
Have benefited from this symmetry, result just becomes as between the wire 22E of section of pixel electrode 20 and common electrode 22, can suppress the generation of unnecessary DC component, only produces the electric field corresponding with display.Therefore, in the liquid crystal indicator of FFS pattern, just can suppress displacement and the image retention of central potential of the common potential of the such the best of conventional example.As a result of, compare the demonstration grade that just can improve liquid crystal indicator with conventional example.
In addition, can also simplify manufacturing process, suppress to realize such formation in manufacturing cost.This is because can graphically form simultaneously the cause of common electrode 22 and inoranic membrane 23 with a dry etching operation.
In addition, owing to not needing to change the material of the 1st alignment films 24, liquid crystal LC etc. in order to obtain above-mentioned effect, therefore do not need to consider to be accompanied by the reduction of the dipole-dipole force that change produces, because of electric charge mobile incompatible characteristics such as image retention that produce exceedingly.
In addition, the gap 22S of section of example 1 of the present invention and the wire 22E of section are not limited to shown in Figure 2.In other words, form the direction of the gap 22S of section and the wire 22E of section, both can form its long side direction on the direction of source line 16, also can with the direction of grid line 13 diagonal cross on form its long side direction.In addition, the length of the gap 22S of section and the wire 22E of section also can be across a plurality of pixels.In addition, the shape of the gap 22S of section and the wire 22E of section can be not only straight line, can be also arc, waveform, serrate.The shape of the 22S of gap section and the wire 22E of section can be also the pectination of one-sided opening.In addition, the present invention is not limited to above-mentioned example 1, and for common electrode being formed the 1st electrode, the situation that pixel electrode is formed the 2nd electrode also can be used.In other words, also can form common electrode on planarization film 18, layer, clip dielectric film 21 ground formation and have equally together the pixel electrode of a plurality of wire sections and gap section with electrode 22 thereon.In this case, just can form inoranic membrane 23 in the wire section of this pixel electrode.Even if also can obtain and above-mentioned same effect in this case.
Example 2
Below, describe referring to the manufacture method of sectional view to the liquid crystal indicator of example 2.Fig. 4 (A), Fig. 9~Figure 11 show the pixel PXL of display part 10A of the liquid crystal indicator of example 2.In addition, in Fig. 9~Figure 11, give and with reference to same label for those inscapes identical with Fig. 1~Fig. 8 and inscape shown in Figure 17.
At first, as shown in Fig. 4 (A), at the 1st transparency carrier 10 of display part 10A, to form the zone of pixel transistor TR again in the formation zone that is pixel PXL, form active layer 11.On the 1st transparency carrier 10, cover active layer 11 ground formation gate insulating films 12.With the overlapping gate insulating film 12 of active layer 11 on form grid line 13.In addition, out not shown, near the gate insulating film 12 the end of display part 10A, form the common electrode line that is supplied to common potential.
At display part 10A, on gate insulating film 12, cover dielectric film 15 between grid line 13 and common electrode line layering of relief.On interlayer dielectric 15, form the source line 16S that is connected with the source of active layer 11 by contact hole H1, and form the drain electrode 16D that is connected with the leakage of active layer 11 by contact hole H2.
Source line 16S and drain electrode 16D form simultaneously as same layer, for example, are the laminated body according to the order formation of titanium, aluminium, titanium.On interlayer dielectric 15, cover source line 16S and drain electrode 16D ground formation passivating film 17.Passivating film 17, by for example under the environment of 300~400 ℃ the silicon nitride film of film forming form.
Then, adopt passivating film 17 is carried out way take resist layer (not shown) as the dry etching of mask, at passivating film 17, the contact hole H3 of drain electrode 16D is exposed in formation.
Then, after having removed above-mentioned resist layer, in contact hole H3 and on passivating film 17, the planarization film 18 of their organic film of formation covering etc.Then, adopt planarization film 18 is carried out way take other resist layer (not shown) as the dry etching of mask, the contact hole H4 of drain electrode 16D is exposed in formation in contact hole H3.
Then, form from the planarization film 18 extend, pixel electrode 20 that be connected with drain electrode 16D in the contact hole H4.Pixel electrode 20 is examples of the 1st electrode of the present invention.Pixel electrode 20 can be by means of the formation of the transparent conductive material of ITO, IZO etc. and graphical and form.The film thickness of pixel electrode 20 it is desirable to the 100nm left and right.
Then, on planarization film 18, form the dielectric film 21 that covers pixel electrode 20.Dielectric film 21 is formed by the inoranic membrane that contains with the formed compound of nitrogen, for example, is formed by the silicon nitride film of film formation at low temp under the environment of 200 ℃ of left and right.This dielectric film 21 is examples of the 1st inoranic membrane of the present invention.
Then, as shown in Figure 9, form on dielectric film 21: it forms the common electrode 22 that alternatively is provided with in parallel with each other a plurality of wire 22E of section and the gap 22S of section.The formation of this common electrode 22 can be by means of the formation of the transparent conductive material of ITO, IZO etc. and graphical and carry out.
Then, as shown in figure 10, form the wire 22E of section and the such inoranic membrane 23 of the gap 22S of section that cover dielectric film 21, common electrode 22.Inoranic membrane 23 is the inoranic membranes that contain with the formed compound of nitrogen, for example, is formed by silicon nitride film, and available CVD method or other film build method form.The film thickness of inoranic membrane 23 is not particularly limited, and for example, is below about 50nm.This inoranic membrane 23 is examples of the 2nd inoranic membrane of the present invention.
In addition, inoranic membrane 23 and top said dielectric film 21 can be also the inoranic membranes beyond silicon nitride film, and inoranic membrane 23 and dielectric film 21 use same materials form.
As other example, inoranic membrane 23 and dielectric film 21 can be both the films that comprises the compound that contains aerobic of silicon oxide film etc., in addition, can be also the films that contains aerobic and nitrogen compound that comprises of silicon oxynitride film etc.
An example of the formation method of the inoranic membrane 23 that carries out with the method beyond the CVD method for, also can by the way that adopts coating process (whirl coating, print process etc. in other words) to form and cure the paste that contains silicon and organic material, form silicon oxide film as inoranic membrane 23.
It is desirable to, inoranic membrane 23 can be by means of the print process as an example of coating process, in other words, forms with the method for predetermined graphic printing (for example, serigraphy, letterpress) inorganic material.This is because in the situation that print process, and the terminal TL place at the portion of terminal 10T of Fig. 1 when inoranic membrane 23 arranges peristome, can be omitted in the graphical operation of needed inoranic membrane 23 in CVD method, other coating process, can simplify the cause of manufacturing process.
Then, as shown in figure 11, form the 1st alignment films 24 that covers inoranic membrane 23.The 1st alignment films 24 is that resin etc. forms by polyimide.The frictional direction of the 1st alignment films 24 is overlooked for the long side direction of the wire 22E of section of common electrode 22 and is for example approximately tilted 5~10 °.The 1st alignment films 24 is examples of alignment films of the present invention.
Then, to the 1st transparency carrier 10, paste the 2nd transparency carrier 30, between them, enclose the liquid crystal LC of nematic crystal with positive dielectric constant anisotropy etc.In addition, on the 2nd transparency carrier 30, in advance with the 1st transparency carrier 10 side in opposite directions, form black matrix (not shown), color filter 31 and cover their the 2nd alignment films 32.The 2nd alignment films 32 is that resin etc. forms by polyimide.The frictional direction of the 2nd alignment films 32 is parallel for the frictional direction of the 1st alignment films 24.
Have again, in any one above-mentioned operation, at the 1st transparency carrier, with a light source BL side in opposite directions, form the 1st polaroid PL1.The axis of homology of the 1st polaroid PL1 is parallel for the frictional direction of the 1st alignment films 24.In addition, in any one above-mentioned operation, at the 2nd transparency carrier 30, not with the 1st transparency carrier 10 side in opposite directions, form the 2nd polaroid PL2.The axis of homology of the 2nd polaroid PL2 intersects vertically for the axis of homology of the 1st polaroid PL1.
At last, comprise that by means of handles such as line and cut-outs the laminated body of the 1st transparency carrier 10 and the 2nd transparency carrier 30 is separated into a plurality of liquid crystal indicators.
In the liquid crystal indicator of completing in this wise, in display part 10A, if the stacked relationship of each layer till being conceived to from pixel electrode 20 to liquid crystal LC, the stacked relationship of each layer on the wire 22E of the section upper strata of common electrode 22 is consistent with the stacked relationship of each layer in the formation zone of the gap 22S of section.This is to realize by the wire 22E of section and the 22S of section ground, gap lamination that inoranic membrane 23 is covered common electrode 22.
Below, referring to accompanying drawing unanimously describing this stacked relationship.Figure 12 shows near the part enlarged drawing of the formation the 1st alignment films 24 in Figure 11.As shown in figure 12, in the formation zone of the wire 22E of section of common electrode 22, on the wire 22E of section, interface A between the wire 22E of section that is formed by the transparent conductive material of ITO etc. and the inoranic membrane 23 that formed by silicon nitride film etc. ', inoranic membrane 23 and be interface C between interface B ', the 1st alignment films 24 and liquid crystal LC between the 1st alignment films 24 that forms such as resin by polyimide ' exists according to the order of above narration.
On the other hand, in the formation zone of the gap of common electrode 22 22S of, the pixel electrode 20 that is formed by the transparent conductive material of ITO etc. and the inoranic membrane 23 that forms by the interface D ' between the inorganic film formed dielectric film 21 of silicon nitride film etc., by silicon nitride film etc. and be interface E ' between the 1st alignment films 24 that forms such as resin by polyimide, and the 1st interface F ' between alignment films 24 and liquid crystal LC, exist according to the order of above narration.In other words, the stacked relationship of the stacked relationship of the wire 22E of section of common electrode and the gap 22S of section is consistent.
In addition, dielectric film 21 and inoranic membrane 23 owing to being identical inoranic membrane, therefore the difference that is produced by manufacture method just becomes as ignoring, just need not be considered for the dielectric film 21 of the gap 22S of section and the interface between inoranic membrane 23.
Have benefited from this formation, in the potential difference (PD) owing to display and common potential, in the situation that produced electric field between the wire 22E of section of pixel electrode 20 and common electrode 22, each interface A in the formation zone of the 22E of wire section ', the accumulation of the charged electric charge of B ', C ', and the charged accumulation of each interface D ', E ', F ' in the formation zone of the gap 22S of section will become equal substantially.In other words, will produce symmetry about two accumulations that form the electric charge in zone.Confirmed by the experiment that the present inventor carries out: can irrespectively obtain this symmetry with each film thickness of dielectric film 21, inoranic membrane 23 and the 1st alignment films 24.
Have benefited from this symmetry, result just becomes as between the wire 22E of section of pixel electrode 20 and common electrode 22, can suppress the generation of unnecessary DC component, only produces the electric field corresponding with display.Therefore, in the liquid crystal indicator of FFS pattern, just can suppress displacement and the image retention of central potential of the common potential of the such the best of conventional example.As a result of, compare the demonstration grade that just can improve liquid crystal indicator with conventional example.
In addition, due to the material that does not need to change the 1st alignment films 24, liquid crystal LC etc. in order to obtain above-mentioned effect, therefore do not need to consider to be accompanied by the reduction of the dipole-dipole force that change produces, owing to electric charge mobile incompatible characteristics such as image retention that produce exceedingly.
In addition, in above-mentioned example 2, although inoranic membrane 23 and dielectric film 21 form with identical material,, the present invention is not limited thereto.In other words, although above-mentioned effect meeting slight reduction,, inoranic membrane 23 and dielectric film 21 so long as be difficult to accumulate the film of unnecessary electric charge on the interface between them, can be also the inoranic membranes that differs from one another.For example, in the situation that make dielectric film 21 be silicon nitride film, inoranic membrane 23 also can form with silicon oxide film.
In addition, the gap 22S of section of the present invention and the wire 22E of section are not limited to shown in Figure 2.In other words, form the direction of the gap 22S of section and the wire 22E of section, both can form its long side direction on the direction of source line 16, also can with the direction of grid line 13 diagonal cross on form its long side direction.In addition, the length of the gap 22S of section and the wire 22E of section also can be across a plurality of pixels.In addition, the shape of the gap 22S of section and the wire 22E of section can be not only straight line, can be also arc, waveform, serrate.The shape of the 22S of gap section and the wire 22E of section can be also the pectination of one-sided opening.
In addition, the present invention is not limited to above-mentioned example 2, and for common electrode being formed the 1st electrode, the situation that pixel electrode is formed the 2nd electrode also can be used.In other words, also can form common electrode on planarization film 18, layer, clip dielectric film 21 ground formation and similarly have together the pixel electrode of a plurality of wire sections and gap section with electrode 22 thereon.In this case, just can cover wire section and the gap section ground formation inoranic membrane 23 of dielectric film 21, pixel electrode.Even if also can obtain and above-mentioned same effect in this case.
Example 3
Below, describe referring to the manufacture method of sectional view to the liquid crystal indicator of example 3.Fig. 4 (A), Figure 13~Figure 15 show the pixel PXL of display part 10A of the liquid crystal indicator of example 3.In addition, in Figure 13~Figure 15, give and with reference to same label for those inscapes identical with Fig. 1~Figure 12 and inscape shown in Figure 17.
At first, as shown in Fig. 4 (A), in the 1st transparency carrier 10 of display part 10A, to form the zone of pixel transistor TR again in the formation zone that is pixel PXL, form active layer 11.On the 1st transparency carrier 10, cover active layer 11 ground formation gate insulating films 12.With the overlapping gate insulating film 12 of active layer 11 on form grid line 13.In addition, out not shown, near the gate insulating film 12 the end of display part 10A, form the common electrode line that is supplied to common potential.
In display part 10A, on gate insulating film 12, cover dielectric film 15 between grid line 13 and common electrode line layering of relief.On interlayer dielectric 15, form the source line 16S that is connected with the source of active layer 11 by contact hole H1, and form the drain electrode 16D that is connected with the leakage of active layer 11 by contact hole H2.
Source line 16S and drain electrode 16D form simultaneously as same layer, for example, are the laminated body according to the order formation of titanium, aluminium, titanium.On interlayer dielectric 15, cover source line 16S and drain electrode 16D ground formation passivating film 17.Passivating film 17, by for example under the environment of 300~400 ℃ the silicon nitride film of film forming form.
Then, adopt passivating film 17 is carried out way take resist layer (not shown) as the dry etching of mask, at passivating film 17, the contact hole H3 of drain electrode 16D is exposed in formation.
Then, after having removed above-mentioned resist layer, in contact hole H3 and on passivating film 17, the planarization film 18 of their organic film of formation covering etc.Then, adopt planarization film 18 is carried out way take other resist layer (not shown) as the dry etching of mask, the contact hole H4 of drain electrode 16D is exposed in formation in contact hole H3.
Then, form from the planarization film 18 extend, pixel electrode 20 that be connected with drain electrode 16D in the contact hole H4.Pixel electrode 20 is examples of the 1st electrode of the present invention.Pixel electrode 20 can be by means of formation and graphical formation of the transparent conductive material of ITO, IZO etc.The film thickness of pixel electrode 20 it is desirable to the 100nm left and right.
Then, on planarization film 18, form the organic insulating film 21 that covers pixel electrode 20.Organic insulating film 21 is by the organic material with imide bond, and for example, polyimide is that resin forms, and the film thickness of organic insulating film 21 is not particularly limited, and is for example about 150nm.This organic insulating film 21 is examples of organic film of the present invention.
Then, as shown in figure 13, form on organic insulating film 21: it forms the common electrode 22 that alternatively is provided with in parallel with each other a plurality of wire 22E of section and the gap 22S of section.The formation of this common electrode 22 can be by means of the formation of the transparent conductive material of ITO, IZO etc. and graphical and carry out.
Then, as shown in figure 14, in display part 10A, form and cover organic insulating film 21, the wire 22E of section of common electrode 22 and the organic film 23A that the 22S of section such organic material by having imide bond in gap forms.This organic film 23A is for example that resin forms by polyimide.The film thickness of organic film 23A is not particularly limited, and for example, is about 70nm.This organic film 23A is an example of alignment films of the present invention.
The formation of organic film 23A, the coating process of the print process of the whirl coating of available coating organic material, printing organic material etc. forms.It is desirable to, organic film 23A is used as the print process of one of coating process, with the method for predetermined graphic printing organic material, forms in other words.As the concrete example of print process, can use serigraphy, ink jet printing etc.If adopt this print process, during the organic film 23A on removing the portion of terminal 10T of Fig. 1, can be omitted in the graphical operation of the organic film 23A that must carry out in other coating process, therefore can simplify manufacturing process.
Then, adopt organic film 23A is carried out along the way of the friction of predetermined direction of orientation, the 1st alignment films 23 that formation is formed by this organic film 23A.The frictional direction of the 1st alignment films 23 is overlooked for example about 5~10 ° of inclinations with respect to the long side direction of the wire 22E of section of common electrode 22.The 1st alignment films 24 is examples of alignment films of the present invention.
In addition, organic insulating film 21 and the 1st alignment films 23, i.e. organic film 23A, so long as the film that is formed by the organic material with imide bond can be also that polyimide is the organic film beyond resin, organic insulating film 21 and the 1st alignment films 23, be organic film 23A, available same material forms.As other example, organic insulating film 21 and the 1st alignment films 23, namely organic film 23A, also can be formed by polyamide-based resin (for example, polyamic acid resin).
Then, as shown in figure 15, to the 1st transparency carrier 10, paste the 2nd transparency carrier 30, between them, enclose the liquid crystal LC of nematic crystal with positive dielectric constant anisotropy etc.In addition, at the 2nd transparency carrier 30, in advance with the 1st transparency carrier 10 side in opposite directions, form black matrix (not shown), color filter 31 and cover their the 2nd alignment films 32.The 2nd alignment films 32 is that resin etc. forms by polyimide.The frictional direction of the 2nd alignment films 32 is parallel with respect to the frictional direction of the 1st alignment films 23.
Have again, in any one above-mentioned operation, at the 1st transparency carrier, with a light source BL side in opposite directions, form the 1st polaroid PL1.The axis of homology of the 1st polaroid PL1 is parallel with respect to the frictional direction of the 1st alignment films 23.In addition, in any one above-mentioned operation, at the 2nd transparency carrier 30, not with the 1st transparency carrier 10 side in opposite directions, form the 2nd polaroid PL2.The axis of homology of the 2nd polaroid PL2 intersects vertically with respect to the axis of homology of the 1st polaroid PL1.
At last, comprise that by means of handles such as line and cut-outs the laminated body of the 1st transparency carrier 10 and the 2nd transparency carrier 30 is separated into a plurality of liquid crystal indicators.
In the liquid crystal indicator of completing in this wise, in display part 10A, if the stacked relationship of each layer till being conceived to from pixel electrode 20 to liquid crystal LC, the stacked relationship of each layer on the wire 22E of the section upper strata of common electrode 22 is consistent with the stacked relationship of each layer in the formation zone of the gap 22S of section.This is by forming organic insulating film 21 between pixel electrode 20 and common electrode 22, and, cover that the wire 22E of section of common electrode 22 and the 22S of section ground, gap form the 1st alignment films 23 that formed by organic film 23A and realization.
Below, referring to accompanying drawing unanimously describing this stacked relationship.Figure 16 shows near the part enlarged drawing of the formation the 1st alignment films 23 in Figure 15.As shown in figure 16, in the formation zone of the wire 22E of section of common electrode 22, on the wire 22E of section, the wire 22E of section that is formed by the transparent conductive material of ITO etc. and be interface A between organic film formed the 1st alignment films 23 of resin etc. by polyimide ", the interface B between the 1st alignment films 23 and liquid crystal LC ", exist by the order of narrating above.
On the other hand, in the formation zone of the gap of common electrode 22 22S of, the pixel electrode 20 that is formed by the transparent conductive material of ITO etc. and be interface D between the organic film formed organic insulating film 21 of resin etc. by polyimide, be organic film formed the 1st alignment films 23 of resin etc. and the interface E between liquid crystal LC by polyimide, exist according to the order of narrating above.In other words, the stacked relationship of the wire 22E of section of common electrode is consistent with the stacked relationship of the gap 22S of section.
In addition, organic insulating film 21 and the 1st alignment films 23 owing to being identical organic film, therefore the difference that is produced by manufacture method just becomes as ignoring, just need not be considered for the organic insulating film 21 of the gap 22S of section and the interface between the 1st alignment films 23.
By this formation, in the potential difference (PD) owing to display and common potential, in the situation that produced electric field between the wire 22E of section of pixel electrode 20 and common electrode 22, each interface A in the formation zone of the 22E of wire section ", B " accumulation of charged electric charge, and the charged accumulation of each interface D, E in the formation zone of the gap 22S of section will become equal substantially.In other words, will produce symmetry about two accumulations that form the electric charge in zone.Confirmed by the experiment that the present inventor carries out: can irrespectively obtain this symmetry with each film thickness of organic insulating film 21 and the 1st alignment films 23.
Have benefited from this symmetry, between the wire 22E of section of pixel electrode 20 and common electrode 22, just can suppress the generation of unnecessary DC component, only produce the electric field corresponding with display.Therefore, in the liquid crystal indicator of FFS pattern, just can suppress displacement and the image retention of central potential of the common potential of the such the best of conventional example.As a result of, compare the demonstration grade that just can improve liquid crystal indicator with conventional example.
In addition, owing to not needing to change the material of the 1st alignment films 23, liquid crystal LC etc. in order to obtain above-mentioned effect, therefore do not need to consider to be accompanied by the reduction of the dipole-dipole force that change produces, owing to electric charge mobile incompatible characteristics such as image retention that produce exceedingly.
In addition, in above-mentioned example 3, organic insulating film 21 and the 1st alignment films 23, i.e. organic film 23A, although form with identical material,, the present invention is not limited thereto.In other words, although above-mentioned effect meeting slight reduction,, organic insulating film 21 and the 1st alignment films 23 so long as be difficult to accumulate the film of unnecessary electric charge on the interface between them, can be also the organic films that differs from one another.For example, form the 1st alignment films 23 at the organic material that with polyimide is resin etc., namely in the situation of organic film 23A, organic insulating film 21 also can form with polyamide-based resin (for example, polyamic acid resin).
In addition, the gap 22S of section of the present invention and the wire 22E of section are not limited to shown in Figure 2.In other words, form the direction of the gap 22S of section and the wire 22E of section, both can form its long side direction on the direction of source line 16, also can with the direction of grid line 13 diagonal cross on form its long side direction.In addition, the length of the gap 22S of section and the wire 22E of section also can be across a plurality of pixels.In addition, the shape of the gap 22S of section and the wire 22E of section can be not only straight line, can be also arc, waveform, serrate.The shape of the 22S of gap section and the wire 22E of section can be also the pectination of one-sided opening.
In addition, the present invention is not limited to above-mentioned example 3, and for common electrode being formed the 1st electrode, the situation that pixel electrode is formed the 2nd electrode also can be used.In other words, also can form common electrode on planarization film 18, layer, clip organic insulating film 21 ground formation and similarly have together the pixel electrode of a plurality of wire sections and gap section with electrode 22 thereon.In this case, just can cover wire section and the ground formation of gap section and above-mentioned the 1st same alignment films 23 of organic insulating film 21, pixel electrode.Even if also can obtain and above-mentioned same effect in this case.
In addition, common electrode is being formed the 1st electrode, pixel electrode is being formed in the situation of the 2nd electrode, in order by each pixel PXL, pixel electrode to be connected with pixel transistor TR, just must form contact hole at organic insulating film 21.
If do not form organic insulating film 21, and replace the such inorganic film formed dielectric film 121 by silicon nitride film etc. of the conventional example that forms Figure 17, when dielectric film 121 graphical, just need to carry out to cause the etching procedure of the increase of manufacturing cost.
With respect to this, if adopt the present invention, due in above-mentioned example 3, can adopt the photonasty organic material to form organic insulating film 21, make it graphically to form thus above-mentioned contact hole with easy photo-mask process, therefore just no longer need etching procedure as described above.