CN101496144B - Gas switching section including valves having different flow coefficients for gas distribution system - Google Patents

Gas switching section including valves having different flow coefficients for gas distribution system Download PDF

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CN101496144B
CN101496144B CN200780002304.XA CN200780002304A CN101496144B CN 101496144 B CN101496144 B CN 101496144B CN 200780002304 A CN200780002304 A CN 200780002304A CN 101496144 B CN101496144 B CN 101496144B
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gas
switching valve
fast switching
gas passage
flow
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CN101496144A (en
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迪安·J·拉松
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Lam Research Corp
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Lam Research Corp
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45561—Gas plumbing upstream of the reaction chamber
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F16—ENGINEERING ELEMENTS AND UNITS; GENERAL MEASURES FOR PRODUCING AND MAINTAINING EFFECTIVE FUNCTIONING OF MACHINES OR INSTALLATIONS; THERMAL INSULATION IN GENERAL
    • F16K—VALVES; TAPS; COCKS; ACTUATING-FLOATS; DEVICES FOR VENTING OR AERATING
    • F16K19/00—Arrangements of valves and flow lines specially adapted for mixing fluids
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H01J37/32449—Gas control, e.g. control of the gas flow
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31127—Etching organic layers
    • H01L21/31133—Etching organic layers by chemical means
    • H01L21/31138—Etching organic layers by chemical means by dry-etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31144—Etching the insulating layers by chemical or physical means using masks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/312—Organic layers, e.g. photoresist
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67069—Apparatus for fluid treatment for etching for drying etching
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T137/00—Fluid handling
    • Y10T137/0318—Processes
    • Y10T137/0402—Cleaning, repairing, or assembling
    • Y10T137/0491—Valve or valve element assembling, disassembling, or replacing
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T137/00—Fluid handling
    • Y10T137/8593—Systems
    • Y10T137/877—With flow control means for branched passages
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture

Abstract

A gas switching system for a gas distribution system for supplying different gas compositions to a chamber, such as a plasma processing chamber of a plasma processing apparatus, is provided. The chamber can include multiple zones, and the gas switching section can supply different gases to the multiple zones. The switching section can switch the flows of one or more gases, such that one gas can be supplied to the chamber while another gas can be supplied to a by-pass line, and then switch the gas flows.

Description

The gas switching part that comprises the valve with different flow coefficient for gas distributing system
Background technology
Semiconductor structure is processed in plasma processing, and plasma processing comprises plasma processing chamber, by processing gas, provides into the gas source of this chamber with by the isoionic energy source of this processing γ-ray emission.In such equipment, by comprising the technical finesse semiconductor structure of dry etching process, depositing operation (as metal, dielectric and semi-conductive chemical vapour deposition (CVD) (CVD), physical vapour deposition (PVD) or plasma reinforced chemical vapour deposition (PECVD) and resist stripping technology).Different processing gas is for these treatment technologies, and the semiconductor structure of processing different materials.
Summary of the invention
Provide a kind of and operate to vacuum chamber (as plasma processing chamber), to provide the gas distributing system of the gas of selection.These can be etching gas composition and/or deposition gases composition.The execution mode of this gas distributing system has fast gas switching capabilities, allows thus this system that the gas providing to this vacuum chamber is provided at short notice.Gas switches and can preferably in the situation that undesirable pressure oscillation or flowing instability do not appear in every kind of gas, not complete.Some execution modes of this gas distributing system can provide to the zones of different of the inside of this vacuum chamber the air-flow that comprises gas with various chemicals and/or flow rate of selection.
A kind of execution mode of the gas switching part for gas distributing system is provided, this system is for being provided to plasma processing chamber by processing gas, this gas switching part comprises the first gas passage, is suitable for being communicated with the first gas line and this plasma processing chamber fluid, the second gas passage, is suitable for being communicated with this first gas line and bypass line fluid, along the first fast switching valve of this first gas passage, can operate to open and close this first gas passage, this first fast switching valve has first flow coefficient, with the second fast switching valve along this second gas passage, can operate to open and close this second gas passage, this second fast switching valve has the second coefficient of discharge that is different from this first flow coefficient, thereby when air-flow is by closing this first fast switching valve and opening this second fast switching valve and be switched to this second gas passage from this first gas passage, or when closing this second gas passage and open this first gas passage and be switched to this first gas passage from this second gas passage, the inlet pressure of this first fast switching valve is substantially equal to the inlet pressure of this second fast switching valve.
Be provided for another execution mode of the gas switching part of this gas distributing system, this system is provided to gas the plasma processing chamber that comprises the gas distribution member with central authorities and fringe region, flows and separate each other in these two regions.This gas switched system comprises the first gas passage, is suitable for being communicated with the fringe region fluid of the gas distribution member of the first gas line and this plasma processing chamber, the second gas passage, is suitable for being communicated with this first gas line and bypass line fluid, the 3rd gas passage, is suitable for being communicated with the middle section fluid of the second gas line and this gas distribution member, the 4th gas passage, is suitable for being communicated with this second gas line and this bypass line fluid, the 5th gas passage, is suitable for being communicated with the 3rd gas line and this middle section fluid, the 6th gas passage, is suitable for being communicated with the 3rd gas line and this bypass line fluid, the 7th gas passage, is suitable for being communicated with the 4th gas line and this fringe region fluid, the 8th gas passage, is suitable for being communicated with the 4th gas line and this bypass line fluid, respectively along the first and second fast switching valves of this first and second gas passage, this first fast switching valve can operate to open and close this first gas passage and have first flow coefficient, this second fast switching valve can operate to open and close this second gas passage and have the second coefficient of discharge that is different from this first flow coefficient, thereby when by air-flow when this first gas passage is switched to this second gas passage or be switched to this first gas passage from this second gas passage, the inlet pressure of this first fast switching valve is substantially equal to the inlet pressure of this second fast switching valve, respectively along the third and fourth fast switching valve of this third and fourth gas passage, the 3rd fast switching valve can operate to open and close the 3rd gas passage, and there is the 3rd flow coefficient, the 4th fast switching valve can operate to open and close the 4th gas passage, and there is the 4th flow coefficient that is different from the 3rd flow coefficient, thereby when air-flow is when the 3rd gas passage is switched to the 4th gas passage or be switched to the 3rd gas passage from the 4th gas passage, the inlet pressure of the 3rd fast switching valve is substantially equal to the inlet pressure of the 4th fast switching valve, respectively along the 5th and the 6th fast switching valve of the 5th and the 6th gas passage, the 5th fast switching valve can operate to open and close this first gas passage, and there is the 5th flow coefficient, the 6th fast switching valve can operate to open and close the 6th gas passage, and there is the 6th flow coefficient that is different from the 5th flow coefficient, thereby when air-flow is when the 5th gas passage is switched to the 6th gas passage or be switched to the 5th gas passage from the 6th gas passage, the inlet pressure of the 5th fast switching valve is substantially equal to the inlet pressure of the 6th fast switching valve, respectively along the 7th and the 8th fast switching valve of the 7th and the 8th gas passage, the 7th fast switching valve can operate to open and close the 7th gas passage, and there is the 7th flow coefficient, the 8th fast switching valve can operate to open and close the 8th gas passage, and there is the 8th flow coefficient that is different from the 7th flow coefficient, thereby when air-flow is when the 7th gas passage is switched to the 8th gas passage or be switched to the 7th gas passage from the 8th gas passage, the inlet pressure of the 8th fast switching valve is substantially equal to the inlet pressure of the 7th fast switching valve.
A kind of method of processing semiconductor chip in comprising the plasma processing chamber of showerhead electrode is provided, and this showerhead electrode comprises central authorities and fringe region.The execution mode of the method comprises central authorities and the fringe region that a) the first processing gas is provided to this showerhead electrode assembly, the second processing gas is transferred to bypass line simultaneously, wherein this plasma processing chamber comprises semiconductor chip, and it comprises at least one layer and covers the patterning Etching mask on this layer; B) by first processing γ-ray emission the first plasma and (i) at least one feature of etching or (ii) form polymer deposition on this mask in this layer; C) thus switching this first and second processes flowing of gas this second is processed to gas is provided to the central authorities of this showerhead electrode assembly and fringe region and this first is processed to gas and transfer to this bypass line; D) by this, second process γ-ray emission second plasma and (iii) at least one feature of etching or (iv) form polymer deposition on this layer and this mask in this layer; E) thus switching this first and second processes flowing of gas this first is processed to gas provides into this plasma processing chamber and this second is processed to gas and transfer to this bypass line; And f) by a)-e) to this substrate repeatedly.
Also provide a kind of manufacture for processing gas and be provided to the method for gas switching part of the gas distributing system of plasma processing chamber.The execution mode of the method comprises that the first gas passage that edge is suitable for being communicated with the first gas line and this plasma processing chamber fluid arranges the first fast switching valve; Along the second gas passage that is suitable for being communicated with this first gas line and bypass line fluid, the second fast switching valve is set; And regulate the first flow coefficient of this first fast switching valve and/or regulate the second coefficient of discharge of this second fast switching valve, thereby this first and second flow coefficient differs from one another, and when air-flow is when this first gas passage is switched to this second gas passage or be switched to this first gas passage from this second gas passage, the inlet pressure of this first fast switching valve is substantially equal to the inlet pressure of this second fast switching valve.
Accompanying drawing explanation
Fig. 1 is the cutaway view of the demonstration execution mode of the plasma processing that can be used for of the preferred implementation of this gas distributing system.
Fig. 2 illustrates the preferred implementation of this gas distributing system.
Fig. 3 describes the preferred implementation of the gas supply section of this gas distributing system.
Fig. 4 describes the preferred implementation of the flow control part of this gas distributing system.
Fig. 5 describes the first preferred implementation of the gas switching part of this gas distributing system.
Fig. 6 describes the second preferred implementation of this gas switching part of this gas distributing system.
Embodiment
For the treatment of the plasma processing of semi-conducting material, as for example, at the upper device forming of semiconductor chip (silicon wafer), comprise plasma processing chamber and gas distributing system, it provides processing gas into this plasma processing chamber.In plasma treatment process, this gas distributing system can pass through substrate surface gas is dispensed to single district (region) or a plurality of district (region).This gas distributing system can comprise that flow controller is to control same treatment gas or different disposal gas, or this identical or different admixture of gas is to the flow rate in these regions, thereby allow during the course adjusting gas flow and gas composition in whole on-chip consistency.
Although compare with single sound zone system, multi-region gas distributing system can provide improved flow control, and expectation provides a kind of like this multi-region system that substrate that permission can change this gas composition and/or this gas flow is at short notice processed the device of operation that has.
Provide gas distributing system, for provide gas with various to form and/or flow rate to chamber.In preferred implementation, this gas distributing system is suitable for being communicated with internal vacuum chamber fluid, as the plasma processing chamber of plasma processing, and provides the ability that gas with various chemicals and/or specific gas flow rate are provided to this vacuum chamber in processing operating process.This plasma processing can be low-density, intermediate density or high density plasma reactors, comprises energy source, and it uses RF energy, microwave, magnetic field etc. to produce plasma.For example, this high-density plasma can be at transformer-coupled plasma (TCP tM) produce in reactor, it is also referred to as inductive plasma reactor, electron cyclotron resonance (ECR) plasma reactor, condenser type discharge reactor etc.The exemplary plasma reactor that the execution mode of this gas distributing system can be used for comprises Exelan tMplasma reactor, as 2300Excelan tMplasma reactor, can be from being positioned at Fremont, and the Lam Research Corporation of California obtains.During plasma etch processes, can be to applying multi-frequency in conjunction with electrode and electrostatic chuck substrate support.Or in double frequency plasma reactor, different frequencies can be applied on this substrate support and electrode, as showerhead electrode, itself and this substrate separates to form plasma generation district.
A preferred implementation of this gas distributing system provides the inside into this vacuum chamber (as plasma processing chamber) by the first gas via single region or a plurality of region, preferably at least via the central authorities and the fringe region that close on the surperficial gas distribution member of pending substrate exposure.In this plasma processing chamber, these central authorities and fringe region radially separate mutually, and flow insulated preferably.This gas distributing system can shift to vacuum chamber bypass line the second gas that is different from this first gas simultaneously.This bypass line can be communicated with fluids such as vacuum pumps.A preferred implementation, this first gas is that the first processing gas and this second gas are different disposal gas.For example, this first gas can be etch gas chemistries or deposition gases chemicals, and this second gas can be different etch gas chemistries or deposition gases chemicals.This gas distributing system can provide this first gas to divide to be clipped to the different controlled flow rate of these central authorities and fringe region simultaneously, and simultaneously by this this bypass line of the second gas turns, and vice versa.By turning to this bypass line by one in these gases, can realize at short notice the conversion of the gas that is fed to this vacuum chamber.
This gas distributing system comprises switching device shifter, and it allows short time endogenous supply to comprising that gas between first and second gases of vacuum chamber in single region or a plurality of regions switches or gas is changed.For multizone system, this gas distributing system can be provided to these central authorities and fringe region by this first gas, this second gas is transferred to this bypass line simultaneously, then switch at short notice this gas and distribute, thereby this second gas is provided to these central authorities and fringe region and this first gas is transferred to this bypass line.This gas distributing system alternately provides the inside into this vacuum chamber by this first and second gas, each lasting required time, to allow conversion fast between the different disposal operation of using gas with various chemicals, for example, process the alternate steps of the method for semiconductor device.In a preferred embodiment, these method steps can be different etching steps, for example, pulsed etch and deposition step, etching step faster, as main etching, and relatively slow etching step, as crossed etching step; Etching step and material deposition steps; Or different materials deposition step, it deposits to different materials on substrate.
In the preferred implementation of this gas distributing system, the volume of the gas composition in vacuum chamber in restricted area, preferably plasma restricted area, can replace (that is, being washed out) by another gas composition of introducing at short notice this this vacuum chamber.The valve that quick switching capability is provided by providing in this gas distributing system in such gas replacement can preferably complete with interior at 1s, more preferably in about 200ms.For the plasma processing chamber for the treatment of 200mm or 300mm wafer, these ion restricted areas can have about 1/2 and be raised to the volume of about 4 liters.These ion restricted areas can be formed by a pile limit collar, as are disclosed in total United States Patent (USP) NO.5, the parts in 534,751, and it is whole and be combined in here by reference.
Fig. 1 described this gas distributing system execution mode 100 can for exemplary semi-conducting material plasma processing 10.This equipment 10 comprises vacuum chamber or plasma processing chamber 12, and it has the inside that comprises substrate support 14, at substrate during plasma treatment 16, is supported on this strutting piece.This substrate support 14 comprises clamping device, and preferably electrostatic chuck 18, and it can operate, during processing, this substrate 16 is clamped in to this substrate support 14.This substrate can be by focusing ring and/or edge ring, ground connection extension or miscellaneous part around, as disclosed parts in total U.S. Patent Application Publication No.US2003/0029567, it is whole and be combined in here by reference.
In a preferred embodiment, this plasma processing chamber 12 comprises plasma restricted area, and for processing 200mm or 300mm wafer, this region has about 1/2 and is raised to about 4 liters, preferably about 1 is raised to about 3 liters.For example, this plasma processing chamber 12 can comprise that limit collar layout (as disclosed in total U.S. Patent No. 5,534,751) is to form these ion restricted areas.This gas distributing system can preferably be less than in about 200ms being less than in time of about 1 second, replaces these these volumes of gas of ion restricted area, and there is no diffuse in reverse direction with another kind of gas.The fluid that this limiting mechanism can limit inside from this plasma volume to this plasma processing chamber 12 part outside this plasma volume is communicated with.
This substrate 16 can comprise base material, as silicon wafer; The intermediate layer of pending (for example etching) material on this base material; With the mask layer on this intermediate layer.This intermediate layer can be conduction, nonconducting or semiconductive material.This mask layer can be the photoresist material of patterning, and it has patterns of openings, in this intermediate layer and/or the feature that needs of one or more other layer of etching, for example, hole, via hole and/or groove.This substrate can comprise the extra layer of conduction between this basic unit and this mask layer, non-conductive or semiconductive material, depends on the type of the semiconductor device forming on this base material.
Exemplary dielectric material that can be processed is that for example, doped silicon oxide, as silicon fluoride oxide; Non-doped silicon oxide, as silicon dioxide; Spin-coating glass; Silicate glass; Doping or the hot Si oxide of non-doping; With doping or non-doping TEOS depositing silicon oxide.This dielectric material can be low-k materials, the selectable k value of its tool.Such dielectric material can cover conduction or semi-conductive layer, as polysilicon; Metal, as aluminium, copper, titanium, tungsten, Mo and Mo alloys; Nitride, as titanium nitride; And metal silicide, as titanium silicide, tungsten silicide and molybdenum silicide.
Exemplary plasma process apparatus 10 shown in Fig. 1 comprises showerhead electrode assembly, and it has the supporting bracket 20 that forms this plasma chamber walls and the shower nozzle 22 that is connected to this supporting bracket.Baffle assembly between this shower nozzle 22 and this supporting bracket 20 will process gas and be assigned to the back side 28 of this shower nozzle equably.This baffle assembly can comprise one or more baffle plates.In this embodiment, this baffle assembly comprises baffle plate 30A, 30B and 30C.Between this baffle plate 30A, 30B and 30C; And collection chamber (plenum) 48A, 48B and 48C that between this baffle plate 30C and shower nozzle 22, formation is opened.This baffle plate 30A, 30B and 30C and shower nozzle 22 comprise through channel (through passage), for processing the inside of gas inflow plasma processing chamber 12.
In this embodiment, the collection chamber between this plate 20 and this baffle plate 30A and collection chamber 48A, 48B between this baffle plate 30A, 30B and 30C and 48C are divided into middle section 42 and fringe region 46 by seal 38A, 38B, 38C and 38D (as O shape ring).This middle section 42 and fringe region 46 can provide the processing gas with gas with various chemicals separately and/or flow rate by gas distributing system 100, preferably under the control of controller 500.Gas is provided and is entered this middle section 42 by middle section source of the gas 40, and gas is to be provided and entered circular passage 44a and then enter this fringe region 46 by fringe region source of the gas 44.This processing gas flow is crossed the passage of this baffle plate 30A, 30B and 30C and this shower nozzle 22 and is entered the inside of this plasma processing chamber 12.This processing gas is excited as plasmoid by power supply in this plasma processing chamber 12, as RF source drive electrode 22, or the power drives electrode in this substrate support 14.When providing gas with various to form in this plasma processing chamber 12, the RF power that is applied to this electrode 22 can change, and preferably, being less than in the time of about 1s, is more preferably less than about 200ms.
In other preferred implementations, this plasma processing 10 can comprise gas ejector system, for processing gas is spurted into this plasma processing chamber.For example, this gas ejector system can have as total U.S. Patent Application Publication No.2001/0010257, U.S. Patent Application Publication No.2003/0070620, U.S. Patent No. 6,013,155 or U.S. Patent No. 6,270,862 disclosed structures, its each by reference its integral body be combined in here.This gas ejector system can comprise injector, and it is provided to processing gas the zones of different of plasma processing chamber.
Fig. 2 illustrates a preferred implementation, and wherein this gas distributing system 100 comprises gas supply section 200, flow control part 300 and the gas switching part 400 that mutual fluid is communicated with.This gas distributing system 100 preferably also comprises controller 500 (Fig. 1), to control this controller of communication connection to control this gas supply section 200, the operation of flow control part 300 and gas switching part 400.
In this gas distributing system 100, this gas supply section 200 can provide gas with various to this flow control part 300 via the first and second gas lines 235,245 separately, as the first and second processing gases.This first and second gas can have mutual different composition and/or specific gas flow rate.
This flow control part 300 can operate to control flow rate, and the composition that also regulates alternatively the gas with various that can be provided to this switching part 400.This flow control part 300 can be respectively provides this first and second gas of different flow rates and/or chemicals via passage 324,326 and 364,366 to this switching part 400.In addition, provide that (other gas is transferred to bypass line 50 simultaneously to this first gas of this plasma processing chamber 12 and/or the flow rate of the second gas and/or chemicals, it can be communicated with vacuum pump system fluid, as between turbine pump and roughing pump) can be different for this middle section 42 and this fringe region 46.So this flow control part 300 can provide required gas flow and/or gas chemistry at whole substrate 16, strengthen thus substrate and process homogeneity.
In this gas distributing system 100, this switching part 400 can operate with at short notice from this first gas be switched to this second gas with allow in single region or a plurality of region (for example, this middle section 42 and this fringe region 46) in by this second gas, replace this first gas, and this first gas is transferred to this bypass line simultaneously, or vice versa.This gas switching part 400 preferably can switch between this first and second gas, and each gas flow there will not be undesirable pressure oscillation and flow instability.If needed, this gas distributing system 100 can make this first and second gas keep the continuous volume flow rate of substantial constant by this plasma processing chamber 12.
Fig. 3 illustrates the preferred implementation of this gas supply section 200 of this gas distributing system 100.The gas supply section 200 of describing in Fig. 3 is described in the open No.2005/0241763 of total U. S. application, and it is whole and be combined in here by reference.This gas supply section 200 is preferably connected to this controller 500 to control the operation of flow control assembly, as valve and flow controller, to be provided forming of two or more gases that can be provided by this gas supply section 200.In this embodiment, this gas supply section 200 comprises a plurality of gas sources 202,204,206,208,210,212,214 and 216, and each is communicated with this first gas line 235 and these the second gas line 245 fluids.Like this, this gas supply section 200 can provide many required gas with various mixtures to this plasma processing chamber 12.A plurality of gas sources that are included in this gas distributing system 100 are not limited to the gas source of any specific quantity, but preferably include at least two different gas sources.This gas supply section 200 can comprise greater or less than the gas source in this embodiment that comprises shown in eight Fig. 3.For example, this gas supply section 200 can comprise two, three, four, five, ten, 12,16 or more gas sources.Can comprise pure gas by the gas with various that gas source provides separately, as O 2, Ar, H 2, Cl 2, N 2deng, and gaseous fluorine carbon compound and/or fluorinated hydrocarbon compound, as CF 4, CH 3f etc.In a preferred implementation, this plasma processing chamber is that etching chamber and this gas source 202-216 can provide Ar, O 2, N 2, Cl 2, CH 3, CF 4, C 4f 8and CH 3f or CHF 3(with its any applicable order).Can be based on the required technique of carrying out in this plasma processing chamber 12 is selected by gas source 202-216 provides separately specific gas, for example, specific dry ecthing and/or deposition of material technique.This gas supply section 200 can provide the flexibility widely of selecting about gas, provides these gases for carrying out etch process and/or deposition of material technique.
This gas supply section 200 preferably also comprises that at least one tuning gas source is to regulate this gas composition.This tuning gas can be, for example O 2, inert gas, as argon gas, or reactant gas, as fluorocarbons or fluorohydrocarbon gas, for example, C 4f 8.In the execution mode shown in Fig. 3, this gas supply section 200 comprises the first tuning gas source 218 and second tune gas source 219.As described below, this first tuning gas source 218 and second tune gas source 219 can provide tuning gas to regulate the composition of this first and/or second gas that is provided to this gas switching part 400.
In the execution mode of this gas supply section 200 shown in Fig. 3, volume control device 240 is preferably located in each of the gas passage 222,224,226,228,230,232,234 that is communicated with this gas source 202,204,206,208,210,212,214 and 216 fluids respectively and 236, and also in the gas passage 242,244 being communicated with this first tuning gas source 218 and these second tune gas source 219 fluids respectively.This volume control device 240 can operate to control the flow of the gas being provided by the gas source 202-216 being correlated with and 218,219.This volume control device 240 is mass flow controller (MFC) preferably.
In the execution mode shown in Fig. 3, valve 250,252 is located at the downstream of this gas source 202-216 along this gas passage.This valve 250,252 can open or close selectively, preferably under the control of this controller 500, to allow gas with various mixture to flow to this first gas line 235 and/or this second gas line 245.For example, by open and the one or more associated valve 252 of this gas source 202-216 (keeping closing with remaining valve being associated 252 of this gas source 202-216) simultaneously, the first admixture of gas can be provided to this first gas line 235.Similarly, by open and one or more associated valve 250 of other gas source 202-216 (keeping closing with remaining valve being associated 250 of this gas source 202-216) simultaneously, the second admixture of gas can be provided to this second gas line 245.Therefore, the various mixture of this first and second gas and mass flowrate can be provided to this first gas line 235 and this second gas line 245 by these gas supply section 200 controllable operatings.
In a preferred implementation, this gas supply section 200 can operate to provide this first and second gas respectively via this first gas line 235 and continuous the flowing of this second gas line 245.This first gas or this second gas flow to these ion processing chambers 12 and another kind of gas is transferred to this bypass line.This bypass line can be connected to vacuum pump etc.By the continuous flow of this first and second gas, the quick conversion providing into the processing gas of this plasma processing chamber can be provided this gas distributing system 100.
Fig. 4 illustrates the preferred implementation of this flow control part 300 of this gas distributing system 100.The flow control part 300 of describing in Fig. 4 is at the open No.10/835 of U. S. application, describes in 175.This flow control part 300 comprises first flow control section 305, it is communicated with these the first gas line 235 fluids from this gas supply section 200, with the second flow control section 315, it is communicated with these the second gas line 245 fluids from this gas supply section 200.This flow control part 300 can operate to control the ratio of this first gas that is provided to respectively this middle section 42 and fringe region 46, and this second gas is transferred to this bypass line, and the ratio of controlling this second gas that is provided to respectively this middle section 42 and fringe region 46, and this first gas is transferred to this bypass line.This first flow control section 305 is two these independent the first gas vent streams by this first gas stream of introducing at this first gas line 235, and this second flow control section 315 is divided into two these independent the second gas vent streams by this second gas of introducing at this second gas line 245.This first flow control section 305 comprises the first and second gas passages 324,326 that are communicated with this middle section 42 and fringe region 46 fluids respectively via this switched system 400, and this second flow control section 315 comprises the first and second gas passages 364,366 that are communicated with this middle section 42 and fringe region 46 fluids respectively via this switched system 400.
In preferred a layout, each of this first flow control section 305 and this second flow control section 315 comprises at least two flow restrictors.Each flow restrictor preferably has fixing confinement dimension for the gas flow by it.This flow restrictor is hole preferably.This flow restrictor restriction gas flow and be positioned at the upstream in these holes and keep the gas pressure of approximately constant near the region in these holes at this gas passage.Each of this first flow control section 305 and this second flow control section 315 preferably includes mesh, for example two, three, four, five or porous more, each preferably has different cross section confinement dimension, for example, and different diameters or different sectional areas.The confinement dimension in these holes is less than the sectional area of other parts of the gas flow paths of this gas distributing system 100.These holes are velocity of sound hole preferably.These gas flows preferably operate in the mobile system of key in this flow control part 300, thereby the conductance in this given hole is determined separately by its confinement dimension and entrance air pressure.Along with the conductance increase in this hole, through this hole, to realize the pressure drop of the given flow rate through this hole, reduce.
In the execution mode shown in Fig. 4, each comprises five holes 330,332,334,336 and 338 this first and second flow controls part 305,315.For example, these holes 330,332,334,336 and 338 can have respectively relevant confinement dimension, and for example one, one and half, two, three and three s' diameter.Therefore,, when gas flow occurs through at least two holes 336 and 338, these holes have approximately same total conductance.Or, reach whole four hole 330-336 and can open to provide the total conductance of hole 330-336 of comparing different ratios from the conductance in this hole 338, to this first gas flow of different ratios and this second gas flow are provided to this middle section 42 and this fringe region 46.For flow control part 305, valve 320 is communicated with gas passage 324,326,331 and 333 fluids, the quantity that makes to arrive the possible ratio of the first gas flow of this middle section 42 and this fringe region 46 and this second gas flow doubles, and reduces thus the quantity at the needed hole 330-338 of this system.Flow control part 315 has same structure to reduce thus the quantity of hole 330-338 required in this system.
Another execution mode can comprise the hole of varying number, for example two holes altogether; The second hole that comprises this hole 338 and alternative the plurality of hole 330-336.For example, this second hole can have the confinement dimension identical with this hole 338.At such execution mode, be provided to this first gas of this middle section 42 and this fringe region 46 and/or the flow-rate ratio of the second gas and be approximately 1: 1.
Valve 320 is preferably located at each the upstream of each hole 330-338 to control to the flow of this first and second gas in these holes.For example, in this first flow control section 305 and/or this second flow control section 315, this one or more valve 320 can open to allow this first gas and/or the second gas to flow to one or more relevant hole 330-336, and another valve 320 opens to allow this first gas and/or this second gas to flow to this hole 338.
In this first flow control section 305, these holes 330-336 is communicated with these gas passage 322 fluids.This gas passage 322 is divided into the first and second gas passages 324,326, and it is communicated with this gas switching part fluid.A pair of valve 320 is located in this first and second gas passage 324,326 to allow to control the one or more flows that flow to the first gas of this middle section 42 and/or this fringe region 46 through the hole 330-336 of this first flow control section 305.At another execution mode, this pair of valve 320 arranges along this gas passage 324, and 326 can be substituted by single cross valve.
In this first flow control section 305, this hole 338 arranges along this gas passage 319.This gas passage 319 is divided into gas passage 331,333, and it is communicated with these the first and second gas passages 324,326 fluids respectively.A pair of valve 320 is located in this gas passage 331,333 to control the flow that flows to this first gas of this first and second gas passage 324,326 through this hole 338.At another execution mode, this pair of valve 320 arranging along this gas passage 331,333 can be substituted by single cross valve.
In this second flow control section 315, a pair of valve 320 arranges to control through one or more of these holes 330-336 along this first and second gas passage 364,366 and flows to the flow of this middle section 42 of this plasma processing chamber and this second gas of this fringe region 46.At another execution mode, this pair of valve 320 arranging along this gas passage 364,366 can be substituted by single cross valve.
At this second flow control section 315, this hole 338 is arranged along this gas passage 359.This gas passage 359 is divided into gas passage 372,374, and it is communicated with these the first and second gas passages 364,366 fluids respectively.A pair of valve 320 is located in this gas passage 372,374 to control the flow that flows to this second gas of this first and/or second gas passage 364,366 through this hole 338.At another execution mode, this pair of valve 320 arranging along this gas passage 372,374 can be substituted by single cross valve.
These holes 330-338 is included in this flow control part 300, with this gas distributing system 100 of box lunch by the gas that flows into this plasma processing chamber 12 when this first gas becomes this second gas, the flowing instability that prevents pressure oscillation and this gas flow, vice versa.
In this embodiment shown in Fig. 4, the gas passage 242 (Fig. 3) of this first tuning gas source 218 is arranged as this first tuning gas is provided to this first gas passage 324 of this first flow control section 305 and/or the second gas passage 326 regulating this first gas composition.The gas passage 244 (Fig. 3) of this second tune gas source 219 is arranged as this second tune gas is provided to this first gas passage 364 of this second flow control section 315 and/or the second gas passage 366 to regulate this second gas composition.This first and second tuning gas can be identical tuning gas or different tuning gas.
A volume control device 340, is preferably MFC, along this gas passage 242, arranges.Valve 320 arranges and to control respectively this first tuning gas, enters the flow of this gas passage 326,324 along this gas passage 337,339.At another execution mode, this pair of valve 320 arranging along this gas passage 337,339 can be substituted by single cross valve.
Volume control device 340, is preferably MFC, along this gas passage 244, arranges.Valve 320 arranges and to control respectively this second tune gas, enters the flow of this gas passage 366,364 along this gas passage 376,378.In another alternate embodiment, a pair of valve 320 arranging along this gas passage 376,378 can be substituted by single cross valve.
In the execution mode of this flow control part 300 shown in Fig. 4, this first flow control section 305 and this second flow control section 315 comprise the same assembly being arranged in same structure.Yet in other preferred implementation of this gas distributing system 100, this first and second flow controls part 305,315 can have the assembly that differs from one another and/or different structures.For example, this first and second flow controls part 305,315 can comprise the hole with the confinement dimension of differing from one another and/or a plurality of hole of different numbers.For example, this first and second flow controls part 305,315 can comprise multiple tuning gas.
In this gas distributing system 100, this gas switching part 400 and this flow control part 300, and this bypass line fluid flowing to inside and this first and second gas of this vacuum chamber is communicated with.The first preferred implementation of this gas switching part 400 is described in Fig. 5.This gas switching part 400 can alternately be provided to the first and second gases this middle section 42 and this fringe region 46 of this plasma processing chamber 12.This first gas passage 324 and this second gas passage 326 of this gas switching part 400 and this first flow control section 305, and be communicated with this first gas passage 364 and these the second gas passage 366 fluids of this second flow control section 315.
This first gas passage 324 of this first flow control section 305 is divided into gas passage 448,450; This second gas passage 326 of this first flow control section 305 is divided into gas passage 442,444; This first gas passage 364 of this second flow control section 315 is divided into gas passage 452,454; And this second gas passage 366 of this second flow control section 315 is divided into gas passage 456,458.In this embodiment, this gas passage 442 is communicated with these fringe region 46 fluids of this plasma chamber 12, and this gas passage 448 is communicated with these middle section 42 fluids of plasma processing chamber 12, and this gas passage 444 provides bypass line.This gas passage 456 is communicated with these gas passage 442 fluids to this fringe region 46.This gas passage 452 is communicated with these gas passage 448 fluids to this middle section 42.This gas passage 450,454 and 458 is communicated with these gas passage 444 fluids to this bypass line.
Valve 440 is along each layout of this gas passage 442,444,448,450,452,454,456 and 458.This valve 440 can open and close selectively, preferably, under the control of this controller 500, so that this first or second gas is provided to this chamber, and another gas is transferred to this bypass line simultaneously.
For example, for this first gas being provided to this middle section 42 and this fringe region 46 of this plasma processing chamber 12, and this second gas is transferred to this bypass line, valve 440 along this gas passage 442,448 and 454,458 is opened, and this valve 440 along this gas passage 444,450 and 452,456 is closed.In order to switch this air-flow, thereby this second gas is provided to this middle section 42 and this fringe region 46 of this plasma processing chamber 12, and this first gas is transferred to this bypass line, valve 440 along this gas passage 444,450 and 452,456 is opened, and this valve 440 along this gas passage 442,448 and 454,458 is closed.In other words, first group of valve 440 opened and second group of valve 440 closes that this first gas is provided to this plasma processing chamber 12, and then this first group of same valve closing and second group of same valve 440 are opened so that air-flow is changed into this second gas is provided to this plasma processing chamber.
In this gas switching part 400, this valve 440 is fast switching valves.As used herein, to be valve can open or close at short notice after being actuated to open or close for word " fast switching valve " meaning, is preferably less than about 100ms, as is less than about 50ms or is less than 10ms.For suitable " fast switching valve " using at this gas switching part 400 aLD air bladder valve, can be from being positioned at Solon, and the Swagelok company of Ohio obtains.
This fast Swagelok ALD valve be air-driven.This gas switching part 400 preferably includes the control system for controlling these valve opens and closing.In one embodiment, this control system comprises that control valve (electromagnetically operated valve) is to collect from the signal of this controller 500 and pneumatic air is sent to fast switching valve fast.This fast switching valve is subject to this activity of control valve control fast.This control valve need to be less than 5ms conventionally, and for example about 2ms, and this fast switching valve needs about 10ms conventionally, and for example about 6ms or still less, total time is less than about 10ms, accepts this control signal until drive this fast switching valve as about 8ms.Can be dependent on the operate time of this fast switching valve and comprise the length of the flow channel that pneumatic air is provided and the factor of size and pneumatic supply pressure and change.This pneumatic supply pressure can for example be selected like this, and this fast switching valve is with about identical speed open and close, its can prevent in opening and closing process valve between instantaneous upstream pressure fluctuation.
This air pressure air supply system can have suitable structure.In one embodiment, this supply system can comprise gas container, and it can operate within the full duration of valve event, this pneumatic supply pressure to be remained in the scope of selection, for example, and from about 80 to 85psig.This supply system can comprise that upstream check-valves and adjuster are with by reservoir pressure this pneumatic supply pressure drop isolation relevant with other and system.This reservoir volume can the amount of pressure drop based in fast switching valve course of action be selected with the time quantum that is backfilled to adjuster setup pressure value.
This gas switching part 400 can be provided to this first gas for example inside of this vacuum chamber, this second gas is transferred to this bypass line simultaneously, then, preferably, under this controller 500 is controlled, switch fast these air-flows and this second gas is provided to this vacuum chamber and this first gas is transferred to this bypass line simultaneously.Before switching gas, being provided to this first gas of this vacuum or the time quantum of the second gas can be controlled by this controller 500.As explained above, this gas distributing system 100 can be for the plasma processing chamber that comprises plasma restricted area to replace about 1/2 in the time of about 1s and be raised to the gas volume of about 4 liters being less than, more preferably be less than about 200ms, to stablize this system.
The valve 440 of this gas switched system has valve flow coefficient C v, it represents the resistance of this valve flow.This flow coefficient C vin standard A NSI/ISA-S75.02 (1996), describe in detail, and can be by SEMI (semiconductor equipment industry, SemiconductorEquipment Industry) method of testing of describing in standard F32 is definite, and title is " TestMethod for Determination of Flow Coefficient for High Purity Shut offValves ".For given valve 440, along with this flow coefficient C vincrease, for the given pressure drop through this valve 440, higher by the specific gas flow rate of this valve 440, that is, increase C vmake this valve less limit gas flow.
As above, in the execution mode of this gas switched system 400 shown in Fig. 5, paired valve 440 is set to be communicated with each fluid of this gas passage 326,324,364 and 366.For 440, one valves 440 of every a pair of valve, can open and another valve 440 is closed and flowed into this process chamber will process gas, then this valve can be switched to air-flow is transferred to this bypass line.It has been determined that vice versa, and in order to keep aerodynamic force, the inlet pressure of each valve 440 of a pair of valve 440 keeps constant ideally for this gas is switched to this bypass line from this process chamber is stable.Further determine, the inlet pressure of each valve 440 of a pair of valve 440 of this gas switched system 400 can be by tuning this valve 440 flow coefficient C separately vand keep constant, thereby two valves of every pair of valve have unmatched C vvalue.In addition, it has been determined that, by keeping the inlet pressure substantially constant of each valve 440 of these gas switched system 400 a pair of valves, be preferably constant, and the inlet pressure substantially constant between the multipair valve 440 that this same treatment chamber outlet (central authorities or fringe region) is provided, or preferably constant, the relevant process conversion of flow control part 300 of this gas distributing system 100 can minimize, and preferably eliminates.For example, in a preferred implementation, inlet pressure along the valve 440 of gas passage 442 and 456 approximate identical (when each flow approximately equal to these valves), and along the inlet pressure of the valve 440 of gas passage 448 and 452 approximate identical (when to each flow approximately equal of these valves).This situation allows seamlessly transitting when the gas flow of switching between this flow control part 305 and 315.
For example, valve 440 can have the C of factory preset vvalue, and can mechanically regulate (tuning) with by default C vvalue becomes values for tuning.For example, in one embodiment, this valve 440 can mechanically regulate to reduce this C vvalue.Also can be that other valve structures can mechanically regulate to increase this C vvalue.According to a preferred implementation of this gas switched system 400, the valve 440 (that is, benchmark valve) that arranges, is communicated with this process chamber fluid along this gas passage 442,448,452 and 456 has default C vvalue, and along this gas passage 444,450,454 and 458, with this bypass line fluid, be communicated with setting valve 440 (being tuning valve) there is tuning C vvalue.In a preferred implementation, along this gas passage 442,448,452 and the 456 default C of valve 440 that arrange vvalue has the normal tolerance from manufacturer: is about +/-2% of flow, is desirably about +/-1% of flow, and the tuning C of the valves 440 that arrange along this gas passage 444,450,454 and 458 vvalue has the normal tolerance from manufacturer: be about +/-2% of flow, be desirably about +/-1% of flow.Default and the tuning C that these valves are right vvalue is unmatched, thereby the inlet pressure of each valve 440 of a pair of valve 440 of this gas switched system 400 can keep constant in handoff procedure, and whole valves that same treatment chamber outlet is provided can keep constant in handoff procedure to 440 inlet pressure between the flow control part 305 and 315 shown in Fig. 4.In a preferred implementation, along this gas passage 442,448,452 and the 456 benchmark valves that arrange, can there is identical default C vvalue.In another preferred implementation, this benchmark valve can have different default C vvalue.In a preferred implementation, along this gas passage 444,450,454 and the 458 tuning valves that arrange, can there is this identical tuning C vvalue.In another preferred implementation, this tuning valve can have different tuning C vvalue.In a preferred implementation, the conductance of each this process chamber outlet enough approaches, thereby each valve 440 that arranges, is communicated with this process chamber fluid along this gas passage 442,448,452 and 456 can have identical default C vvalue, and can there is identical tuning C along this gas passage 444,450,454 and 458 each valve 440 that arrange, that be communicated with this bypass line fluid vvalue, simplifies the tuning of this gas switched system thus.
Every a pair of valve 440 can have identical or different C vdo not mate and think each valve two right valves provide constant inlet pressure situation.For example, in the execution mode of this gas switched system 400 shown in Fig. 5, each valve is to having different C vdo not mate.Namely, in one embodiment, this high C vvalue and low C vdifference between value can be identical for every a pair of valve.In another embodiment, this height and low C vvalue for different valves to can be different, and this height and low C vthe difference of value is identical for every pair of valve.In another embodiment, this high C vvalue and low C vdifference between value can be different for every pair of valve.
As above, in a preferred implementation, these can comprise having this identical default C to valve vthe valve of value.In another preferred implementation, these can comprise having different default C to valve vthe valve of value.In such execution mode, one in these valves can be tuned as and not mate this C vvalue is to realize in handoff procedure for the constant inlet pressure of each valve of this pair of valve.
With reference to the valves pair along this gas passage 442 and 444 settings, in one embodiment, the valve 440 that arranges, is communicated with this process chamber fluid along this gas passage 442 can have nominal C vvalue.The valve 440 that arranges, is communicated with this bypass line fluid along this gas passage 444 can tuningly reduce its C vvalue, thus the inlet pressure that increases thus this valve is to mate the valve 440 arranging along this gas passage 442.For example, in one embodiment, the C of the valve 440 arranging along this gas passage 442 vvalue can be about 0.3 preset value,, and the valve arranging along this gas passage 444 can have about 0.15 values for tuning, thus this can keep constant to the inlet pressure of each valve 440 of valve in handoff procedure.At this default C of 440 vvalue exceeds in the situation of desired value, and right two valves 440 of tunable valve are to provide needed C vdo not mate.Preferably, exist viscosity critical flow by the valve 440 along this gas passage 444 (and also by other valves that are communicated with this bypass line fluid) to reflux avoiding, that is, gas is passing this valve dispersion in the opposite direction with this gas flow.For passing through the viscosity critical flow in hole, the variation of outlet pressure can not change the flow through this hole.Conventionally, relative low through the pressure drop of the valve being communicated with this process chamber fluid.
In a preferred implementation, along the valve 440 of this gas passage 444 and 458, can there is identical tuning C vvalue, this is because (these two valves are all communicated with same bypass line fluid, identical exhaust outlet), and along the valve 440 of this gas passage 442 and 456 be communicated with (that is, this identical process chamber transmission outlet) with the same area fluid and there is identical default C vvalue.If the key of this gas switched system 400 is very similar between these two loops, this situation is normally suitable for.For other gas switched systems, wherein these two loops do not have very similar pipe fitting, along the valve of this gas passage 444 and 458, can have the tuning C differing from one another vvalue.In this gas switched system 400 shown in Fig. 5, along the valve of this gas passage 450 and 454, conventionally there is identical tuning C vvalue, this is because these valves are communicated with same bypass line fluid, and along the valve of gas passage 448,452 settings with this process chamber the same area fluid connection and there is identical default C vvalue.
Therefore, in the execution mode of this gas switched system 400, the C of these valves 440 vdo not mate such situation that produces, these for example, are constant to the inlet pressure between valve (valve arranging along this gas passage 442,444) when user for example, is switched to air-flow other valves valve of gas passage 444 settings (along) and then restores from a valve (valve 440 arranging along gas passage 442).Although described the tuning of this valve 440 of arranging, be communicated with this bypass line fluid along this gas passage above, in other embodiments, can to produce constant inlet gas, press situation by the tuning valve 440 being communicated with this process chamber fluid (that is, along this gas passage 442,448,452 and the 456 one or more valves 440 that arrange).Namely, in such execution mode, for every pair of valve, can regulate each valve to produce constant inlet gas pressure situation.In addition, because every pair of valve is unmatched, so each tuning valve can have identical C vset, or for the difference shown in Fig. 5 to valve 440, can have two, three or four different C vset.This another valve not regulating to valve has name or default C vvalue, provides four to have identical nominal C thus in this embodiment vthe valve of value.
The valve of thinking this gas switching part for the flow coefficient that regulates one or more default valves is as follows to producing the example procedure of approximately equalised inlet pressure situation.Select the test airflow (for example,, in about centre) in the critical processing gas flow range of operation of this plasma processing chamber.For example, this air-flow can be the argon gas of about 500sccm.Use for example first flow control section 305 of this flow control part 300,, selected gas flow is to flow to two flow separators to these central authorities and the required weighted value of fringe region.Use this gas switching part 400, from whole air-flows of this first flow control section 305 by along gas passage 442,448, there is factory preset C vthe valve of value flows to this process chamber.Measure the inlet gas pressure of these valves, as use one or more capacitance manometers.Use this gas switching part 400, from after whole air-flows of this first flow control section 305 by along gas passage 444,450, also there is factory preset C vthe valve 440 of value flows to this bypass line.Measure each inlet gas pressure of these valves.By the stream to this plasma processing chamber and to the valve inlet pressure of the stream of this bypass line, compare with measured value.One of valve along this gas passage 442,448 (to this process chamber) or this valve 444,450 (to bypass pipe) are adjusted to lower C vvalue, depends on which valve has the lower inlet pressure that records.Regulate selected valve, again flow into this test gas and remeasure this inlet pressure, and with this inlet pressure comparison to another valve of valve.Can repeat this process until obtain required inlet pressure situation.This adjusting can be determined and determine and in this handoff procedure, can not occur that chamber pressure point is dashed forward or plasma is revealed by switch air-flow for different flow scope.
According to the gas switching part 1400 of the second preferred implementation, describe as Fig. 6.In this embodiment, this gas switching part 1400 is communicated with the first gas passage 405 and the second gas passage 415 fluids.This first and second gas passage 405,415 can be respectively the first gas vent and second gas vent of for example flow control part, is different from the flow control part 300 shown in this Fig. 4, and it does not comprise central authorities and fringe region gas vent.This first gas passage 405 is divided into gas passage 422,424, and this second gas passage 415 is divided into gas passage 426,428.This gas passage 422 and 426 and the internal fluid communication of vacuum chamber, and this gas passage 424 and 428 is communicated with bypass line fluid.Valve 440 is along each setting of this gas passage 422,424 and 426,428.
For example, in order this first gas to be provided to this vacuum chamber and this second gas to be led to this bypass line simultaneously, along the valve 440 of this fluid passage 422 and 428, open and close along the valve 440 of this gas passage 424 and 426.Thereby in order to switch air-flow, this second gas is provided to this vacuum chamber and this first gas is transferred to this bypass line, along the valve 440 of this fluid passage 424 and 426, open and along valve 440 valve closings of this fluid passage 422 and 428.
In the execution mode of this gas switched system 1400 shown in Fig. 6, along the valve of gas passage 422 and 426, guide same process chamber outlet into, and guide same bypass line into along the valve of gas passage 424 and 428.Conventionally, along gas passage 424 and 428 valves that arrange, can there is identical tuning (reducing) C vvalue, and can there is nominal C along the valve of gas passage 422 and 426 vvalue.As above, along these of this gas passage 422,424 and 426,428, to valve, can there is unmatched C vvalue, thus the inlet pressure of each valve 440 of a pair of valve 440 of this gas switched system 400 can keep constant.
The preferred implementation of this gas distributing system 100 can be for being provided to this plasma processing chamber 12 to carry out various etching and/or depositing operation by different gas chemistry and/or flow rate.For example, this gas distributing system 100 can by process gas be provided to plasma processing chamber with the Si oxide of the mask by covering (as UV resist mask) protection (as SiO 2) layer in etch features.This SiO 2layer can be in the upper formation of semiconductor wafer (as silicon wafer), and this wafer has 200mm or 300mm diameter.These features can be, for example, and via hole and/or groove.During such etch process, need to be on the some parts of this mask deposited polymer to repair the striped in mask, for example, crackle or crack, (filling these stripeds), thus be etched in this SiO 2in feature there is their required shapes, for example, there is the via hole of circular cross-section.If do not repair striped, they can finally reach the layer below this mask and in etching process, in fact be passed to that layer.And polymer can be deposited on the sidewall of these features.
Yet, it has been determined that the thickness effect rate of etch of the polymer that is deposited on sidewall and etched feature bottom.When anisotropy, in carving technology, the polymer that is deposited on this feature bottom is substantially removed in etching process.Yet, if polymer becomes too thick at this sidewall and/or in this bottom, will reduce SiO 2rate of etch, and may be stopped completely.Too thick if become, polymer also may be from surfacial spalling.Therefore, preferably control to the indoor time quantum that is provided for forming the admixture of gas that is deposited on the polymer in this mask and feature of this plasma treatment to be controlled at thus this SiO 2the thickness of the polymer deposits forming on layer, also provides this mask is repaired and protection fully simultaneously.At this SiO of etching 2in layer process, polymer periodic ground is removed from this mask.Therefore, this polymer is preferably at this SiO 2between the etching period of layer, be deposited on this mask to guarantee that acquisition is to the enough reparations of this mask and protection.
This gas distributing system 100 can for example be processed gas, with the SiO of the capped mask of etching (UV resist mask) protection to indoor the providing of plasma treatment 2, wherein control and be deposited on polymer thickness and reparation and this mask of protection in these features.The gas switching part of this gas distributing system 100 can operate to allow to provide for this SiO of etching to this plasma treatment is indoor 2first process gas and continued for the first period, the second admixture of gas that is used to form this polymer deposition is transferred to bypass line simultaneously, then switch fast air-flow, thereby to form this polymer deposition, and forward this first admixture of gas to this bypass line to indoor this second admixture of gas that provides of this plasma treatment.Preferably, with this second admixture of gas, at least substantially replace the first admixture of gas of the plasma restricted area that is provided to this plasma processing chamber being less than in time of 1 second, be more preferably less than about 200ms.These ion restricted areas preferably have about 1/2 and are raised to the volume of about 4 liters.
Be used for etching SiO 2the first admixture of gas can comprise, for example, fluorocarbon species is (as C 4f 8), O 2and argon gas.C 4f 8/ O 2the flow rate of/argon gas for example can be, 20/10/500sccm.The second admixture of gas that is used for forming polymer deposition for example can comprise, and fluorohydrocarbon material, as CH 3f and argon gas.CH 3the flow rate of F/ argon gas can be, for example, and 15/500sccm.This second admixture of gas also comprises O alternatively 2.For the capacitive coupling plasma etch reactor for the treatment of 200mm or 300mm wafer, constant pressure for example can be, 70-90mTorr.During this chamber of each introducing, this first admixture of gas preferably flows into this plasma processing chamber about 5 seconds to about 20 seconds (simultaneously this second gas being transferred to this bypass line), and while introducing this chamber, this second admixture of gas preferably flows into this plasma processing chamber about 1 second to about 3 seconds (simultaneously this first gas being transferred to this bypass line) at every turn.SiO in etch substrate 2in process, this etching period and/or the length of this polymer deposition time can increase or reduce within this preferred time period.This polymer deposition is preferably less than the maximum ga(u)ge of about 100 dusts in etching process, and it lasts up to 3 minutes conventionally.In etching process, polymer can be deposited on this mask to repair striped and mask protection is provided.Therefore, preferably can in this etching process procedure, keep the shape of the opening in this mask.
The present invention is described according to a plurality of preferred implementations.Yet, for those skilled in the art, obviously, to be different from that concrete form as above realizes the present invention and do not deviate from purport of the present invention, be possible.These preferred implementations are illustrative, and should not think by any way restrictive.Scope of the present invention is provided by paid claim, rather than explanation before, and is intended that and comprises whole variations and the equivalent falling within the scope of these claims here.

Claims (16)

1. for processing gas being provided to a gas switching part for the gas distributing system of plasma processing chamber, this gas switching part comprises:
The first gas passage, is suitable for being communicated with the first gas line and this plasma processing chamber fluid;
The second gas passage, is suitable for being communicated with this first gas line and bypass line fluid;
Along the first fast switching valve of this first gas passage, can operate to open and close this first gas passage, this first fast switching valve has the first predetermined flow coefficient; With
The second fast switching valve along this second gas passage, can operate to open and close this second gas passage, this second fast switching valve has the second predetermined flow coefficient that is different from this first flow coefficient, thereby wherein said the first predetermined flow coefficient and described the second predetermined flow coefficient can be conditioned as this first and second fast switching valve limits required flow coefficient and not mate, thereby in handoff procedure, when air-flow is by closing this first fast switching valve and opening this second fast switching valve and be switched to this second gas passage from this first gas passage, or when closing this second fast switching valve and open this first fast switching valve and be switched to this first gas passage from this second gas passage, it is constant that the inlet pressure of the inlet pressure of this first fast switching valve and this second fast switching valve keeps, minimize thus pressure oscillation and flowing instability in each gas passage,
Wherein this first and second fast switching valve is suitable for driven (a) to open this first fast switching valve and to close this second fast switching valve so that processing gas is provided to this plasma processing chamber, and (b) closes this first fast switching valve and open this second fast switching valve so that this processing gas is transferred to this bypass line.
2. gas switching part according to claim 1, wherein this first and second fast switching valve can be less than 100ms after driven or be less than open and/or closed in time of 50ms.
3. a plasma processing, comprising:
Plasma processing chamber, it comprises showerhead electrode assembly; With
According to the gas switching part of claim 1, it is communicated with this showerhead electrode assembly fluid.
4. plasma processing according to claim 3, further comprises control system, and it can operate to control the opening and closing of this first and second fast switching valve.
5. plasma processing according to claim 4, further comprises flow control part, and it comprises the first gas line being communicated with this first and second gas passages fluid.
6. plasma processing according to claim 5, further comprises gas supply section, and it is communicated with this flow control segment fluid flow.
7. for gas being provided to a gas switching part for the gas distributing system of plasma processing chamber, this chamber comprises the gas distribution member with central authorities and fringe region, flows and separate each other in these two regions, and this gas switching part comprises:
The first gas passage, is suitable for being communicated with the fringe region fluid of the gas distribution member of the first gas line and this plasma processing chamber;
The second gas passage, is suitable for being communicated with this first gas line and bypass line fluid;
The 3rd gas passage, is suitable for being communicated with the middle section fluid of the second gas line and this gas distribution member;
The 4th gas passage, is suitable for being communicated with this second gas line and this bypass line fluid;
The 5th gas passage, is suitable for being communicated with the 3rd gas line and this middle section fluid;
The 6th gas passage, is suitable for being communicated with the 3rd gas line and this bypass line fluid;
The 7th gas passage, is suitable for being communicated with the 4th gas line and this fringe region fluid;
The 8th gas passage, is suitable for being communicated with the 4th gas line and this bypass line fluid;
Respectively along the first and second fast switching valves of this first and second gas passage, this first fast switching valve can operate to open and close this first gas passage and have first flow coefficient, this second fast switching valve can operate to open and close this second gas passage and have the second coefficient of discharge that is different from this first flow coefficient, thereby wherein said first flow coefficient and described second coefficient of discharge can be conditioned as this first and second fast switching valve limits required first flow coefficient and not mate, thereby in handoff procedure, when air-flow is by closing this first fast switching valve and opening this second fast switching valve and be switched to this second gas passage from this first gas passage, or when closing this second fast switching valve and open this first fast switching valve and be switched to this first gas passage from this second gas passage, it is constant that the inlet pressure of the inlet pressure of this first fast switching valve and this second fast switching valve keeps,
Respectively along the third and fourth fast switching valve of this third and fourth gas passage, the 3rd fast switching valve can operate to open and close the 3rd gas passage and have the 3rd flow coefficient, the 4th fast switching valve can operate to open and close the 4th gas passage and have the 4th flow coefficient that is different from the 3rd flow coefficient, thereby wherein said the 3rd flow coefficient and described the 4th flow coefficient can be conditioned as this third and fourth fast switching valve limits required second coefficient of discharge and not mate, thereby in handoff procedure, when air-flow is by closing the 3rd fast switching valve and opening the 4th fast switching valve and be switched to the 4th gas passage from the 3rd gas passage, or when closing the 4th fast switching valve and open the 3rd fast switching valve and be switched to the 3rd gas passage from the 4th gas passage, it is constant that the inlet pressure of the inlet pressure of the 3rd fast switching valve and the 4th fast switching valve keeps,
Respectively along the 5th and the 6th fast switching valve of the 5th and the 6th gas passage, the 5th fast switching valve can operate to open and close the 5th gas passage and have the 5th flow coefficient, the 6th fast switching valve can operate to open and close the 6th gas passage and have the 6th flow coefficient that is different from the 5th flow coefficient, thereby wherein said the 5th flow coefficient and described the 6th flow coefficient can be conditioned as the 5th and the 6th fast switching valve limits the 3rd required flow coefficient and not mate, thereby in handoff procedure, when air-flow is by closing the 5th fast switching valve and opening the 6th fast switching valve and be switched to the 6th gas passage from the 5th gas passage, or when closing the 6th fast switching valve and open the 5th fast switching valve and be switched to the 5th gas passage from the 6th gas passage, it is constant that the inlet pressure of the inlet pressure of the 5th fast switching valve and the 6th fast switching valve keeps, with
Respectively along the 7th and the 8th fast switching valve of the 7th and the 8th gas passage, the 7th fast switching valve can operate to open and close the 7th gas passage and have the 7th flow coefficient, the 8th fast switching valve can operate to open and close the 8th gas passage and have the 8th flow coefficient that is different from the 7th flow coefficient, thereby wherein said the 7th flow coefficient and described the 8th flow coefficient can be conditioned as the 7th and the 8th fast switching valve limits the 4th required flow coefficient and not mate, thereby in handoff procedure, when air-flow is by closing the 7th fast switching valve and opening the 8th fast switching valve and be switched to the 8th gas passage from the 7th gas passage, or when closing the 8th fast switching valve and open the 7th fast switching valve and be switched to the 7th gas passage from the 8th gas passage, it is constant that the inlet pressure of the inlet pressure of the 8th fast switching valve and the 7th fast switching valve keeps.
8. gas switching part according to claim 7, wherein:
This first, the 3rd, the 6th and the 8th fast switching valve is suitable for driven opening, and this second, the 4th, the 5th and the 7th fast switching valve is suitable for driven closing, to the first processing gas is provided to these central authorities and fringe region, and the second processing gas is transferred to this bypass line; And
This second, the 4th, the 5th and the 7th fast switching valve is suitable for driven opening, and this first, the 3rd, the 6th and the 8th fast switching valve is suitable for driven closing, to this second processing gas is provided to these central authorities and fringe region, and this first processing gas is transferred to this bypass line.
9. gas switching part according to claim 7, wherein this first, the 3rd, the 5th and the 7th flow coefficient is equal to each other, and this second, the 4th, the 6th and the 8th flow coefficient is equal to each other.
10. gas switching part according to claim 7, wherein the difference of this first and second flow coefficient equal this third and fourth flow coefficient poor, the 5th and the difference of the 6th flow coefficient and the 7th and the 8th flow coefficient poor.
11. gas switching parts according to claim 7, wherein:
When each the flow of gas to the first and the 7th fast switching valve equates, the inlet pressure of this first fast switching valve equals the inlet pressure of the 7th fast switching valve; And
When each the flow of gas to the 3rd and the 5th fast switching valve equates, the inlet pressure of the 3rd fast switching valve equals the inlet pressure of the 5th fast switching valve.
12. 1 kinds of plasma processings, comprising:
Plasma processing chamber, it comprises the showerhead electrode assembly with central authorities and fringe region, flow and separate each other in these two regions; With
According to Claim 8, gas switching part, it is communicated with central authorities and the fringe region fluid of this showerhead electrode assembly.
13. plasma processings according to claim 12, further comprise control system, its can operate to control this first, second, third and the opening and closing of the 4th fast switching valve.
14. plasma processings according to claim 13, further comprise flow control part, it comprises the first gas line being communicated with this first and second gas passages fluid, the second gas line being communicated with this third and fourth gas passage fluid, the 3rd gas line being communicated with the 5th and the 6th gas passage fluid and the 4th gas line being communicated with the 7th and the 8th gas passage fluid.
15. plasma processings according to claim 14, further comprise gas supply section, and it is communicated with this flow control segment fluid flow.
16. plasma processings according to claim 12, wherein:
This plasma processing chamber has 1/2 and is raised to the internal capacity of 4 liters; With
This gas distributing system can operate this in the plasma restricted area of this plasma processing chamber first to be processed to gas or this second and processed gas and replace with this and first process gas or second and process another of gas being less than in the time of 1s.
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CN101496144A (en) 2009-07-29
US20120070997A1 (en) 2012-03-22
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US20070158025A1 (en) 2007-07-12
US8772171B2 (en) 2014-07-08
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US8313611B2 (en) 2012-11-20
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TW200735209A (en) 2007-09-16
US8088248B2 (en) 2012-01-03

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