CN101471407B - Method for encapsulating thin type LED device - Google Patents
Method for encapsulating thin type LED device Download PDFInfo
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- CN101471407B CN101471407B CN2007103022712A CN200710302271A CN101471407B CN 101471407 B CN101471407 B CN 101471407B CN 2007103022712 A CN2007103022712 A CN 2007103022712A CN 200710302271 A CN200710302271 A CN 200710302271A CN 101471407 B CN101471407 B CN 101471407B
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Abstract
The invention relates to a packaging method of a thin type luminescent diode device, which comprises providing a substrate, wherein the substrate comprises a first metal layer, a second metal layer and a glue layer, wherein the glue layer is arranged on the first metal layer, and the second metal layer is arranged on the glue layer, forming a groove on the second metal layer and the glue layer, forming a third metal layer on the second metal layer and in the groove, forming a threading line at the bottom of the groove and penetrating through the third metal layer and the first metal layer, utilizing a crystal covering mode to lead crystal particles of the luminescent diode to connect with the bottom of the groove, attaching a glue film on the lower surface of the first metal layer, placing the substrate in a forming module, wherein the forming module comprises an upper module and a lower module, wherein the upper module is covered on the upper surface of the third metal layer on the glue layer, and the upper module is provided with a convex portion which is corresponding to the groove to form a module hole, and the lower module is arranged under the substrate, filling packaging glue stock in the module hole, removing the forming module, removing the glue film, and executing a cutting step to form a thin type luminescent diode device.
Description
Technical field
The invention relates to the method for packing of a kind of method for packing of light-emitting diode assembly, particularly a kind of thin light emitting diode device.
Background technology
Light-emitting diode (Light Emitting Diode; LED) generally be as indicator light, display panel.But along with technical development; Can use as light source; It not only can directly be converted into luminous energy with electric energy expeditiously; And have and reach tens thousand of hours to 100,000 hours useful life most, and can power saving, have simultaneously volume little, do not have mercury, can be applicable to low temperature environment, advantage such as light source tool directivity and colour gamut are abundant.
Light-emitting diode maximum application of present stage is the backlight of mobile phone key; The indicator light of various electronics showpieces; And be applied in the large-screen of advertisement plate recently, and the backlight that is applied in LCD screen is in addition also more and more attracted attention, and the application surface of light-emitting diode is extensive day by day.Along with the epoch are progressive, product presents the design of more and more slimming, and the thickness that therefore reduces light-emitting diode assembly becomes development priority.
Yet the structural restriction of existing stamper tool makes in light-emitting diode assembly, the thickness thickening of encapsulation sizing material on the LED crystal particle.
Therefore, for these reasons, need a kind of method for packing of new thin light emitting diode device.
Summary of the invention
Technical problem to be solved by this invention is to provide a kind of method for packing of thin light emitting diode device; Make that the thickness of encapsulation sizing material reduces on the LED crystal particle; Adopt copper and silver and the 3rd metal level to adopt silver through the first metal layer simultaneously, can significantly reduce the thickness of substrate.
To achieve these goals, the present invention provides a kind of method for packing of thin light emitting diode device, comprises the following step.At first, a substrate is provided, wherein this substrate comprises a first metal layer, one second metal level and a glue-line, and this glue-line is positioned on this first metal layer, and this second metal level is positioned on this glue-line.Then, form a groove, form one the 3rd metal level on second metal level and in this groove at second metal level and this glue-line.Form a penetration line and penetrate the 3rd metal level and this first metal layer at this bottom portion of groove.Utilization cover crystal type with this LED crystal particle therewith bottom portion of groove engage.Attach the lower surface of a glued membrane in the first metal layer.Insert this substrate in a finishing die; Wherein this finishing die comprises a patrix and a counterdie; This patrix overlies the upper surface of the 3rd metal level on the glue-line, and this patrix has a protuberance and constitute a die cavity corresponding to this groove top, and this counterdie underlies this substrate.Insert an encapsulation sizing material to this die cavity.Remove this finishing die.Remove this glued membrane.And, carry out the cutting processing procedure and cut, so that the outer thicker part of said groove is removed, to form this thin light emitting diode device along being positioned at said groove.
Specifically; The present invention provides a kind of method for packing of thin light emitting diode device; Its characteristics are, comprise: a substrate is provided, and said substrate comprises a first metal layer, one second metal level and a glue-line; And said glue-line is positioned on the said the first metal layer, and said second metal level is positioned on the said glue-line; Form a groove in said second metal level and said glue-line; Form one the 3rd metal level on said second metal level and in the said groove; Form a penetration line in said bottom portion of groove and penetrate said the 3rd metal level and said the first metal layer; Utilization is covered crystal type said LED crystal particle is engaged with said bottom portion of groove; Attach the lower surface of a glued membrane in said the first metal layer; Insert said substrate in a finishing die; Wherein said finishing die comprises a patrix and a counterdie; Said patrix overlies the upper surface of said the 3rd metal level on the said glue-line, and said patrix has a protuberance and constitute a die cavity corresponding to said groove, and said counterdie underlies said substrate; Insert an encapsulation sizing material to said die cavity; Remove said finishing die; Remove said glued membrane; And carry out cutting step to form said thin light emitting diode device.
Said method, its characteristics are, also comprise: form and a plurality ofly bore a hole in said bottom portion of groove and penetrate said the 3rd metal level and said the first metal layer.
Said method, its characteristics are that said the first metal layer comprises: a bronze medal layer; And a silver layer, wherein said silver layer is positioned on the said copper layer.
Said method, its characteristics are that said second metal level comprises copper.
Said method, its characteristics are that said the 3rd metal level comprises silver.
Said method, its characteristics are that said glue-line comprises the BT resin.
Said method, its characteristics are that said glued membrane comprises polyimides.
Said method, its characteristics are that said encapsulation sizing material comprises epoxy resin.
Effect of the present invention is, when carrying out pressing mold, because patrix has protuberance, make that the thickness of encapsulation sizing material reduces on the LED crystal particle, and the first metal layer adopts copper and silver and the 3rd metal level to adopt silver, can significantly reduce the thickness of substrate.
Describe the present invention below in conjunction with accompanying drawing and specific embodiment, but not as to qualification of the present invention.
Description of drawings
Fig. 1-4A is the flow chart of manufacturing approach of a kind of substrate of one embodiment of the invention;
Fig. 4 B is the vertical view of Fig. 4 A further groove bottom;
Fig. 5-10A is the flow chart of a kind of light emitter diode seal method of one embodiment of the invention;
Figure 10 B is the perspective view of the thin light emitting diode device of one embodiment of the invention.
Wherein, Reference numeral:
100: 110: the second metal levels of substrate
120: glue-line 130: the first metal layer
210: 310: the three metal levels of groove
410: penetration line 430: positive polar region
440: the perforation in 450: the first of negative pole district
600: glued membrane 710: patrix
720: counterdie 712: protuberance
750: die cavity 800: the encapsulation sizing material
810: recess 900: thin light emitting diode device
Embodiment
Fig. 1-4A is the flow chart of manufacturing approach of a kind of substrate of one embodiment of the invention.With reference to Fig. 1, a substrate 100 is provided, it comprises the first metal layer 130, second metal level 110 and glue-line 120, and its mesoglea 120 is formed on the first metal layer 130, and second metal level 110 is formed on the glue-line 120.In an embodiment, second metal level 110 can comprise copper.Moreover in an embodiment, the first metal layer 130 can comprise copper, nickel, gold, and it is a prior art; At another embodiment, the first metal layer 130 comprises copper, silver.For instance, if the first metal layer 130 comprises copper, nickel, gold, its method for packing can form copper earlier one time; Its thickness is about 12 microns to about 18 microns, then on a copper, forms secondary copper, and its thickness also is about 12 to about 18 microns; Then on secondary copper, form a nickel dam; Its thickness also is about 5 microns, on this nickel dam, forms a gold medal layer then, and its thickness is about 0.4 micron; The thickness that also is the first metal layer 130 is about 29.4 microns to about 41.4 microns, and the mode that wherein can electroplate forms an above-mentioned copper, secondary copper, nickel dam, gold layer; If the first metal layer 130 comprises copper, silver; Its method for packing can form a bronze medal layer earlier; Its thickness is about 12 microns to about 18 microns, on this copper layer, forms a silver layer then, and its thickness is about 0.4 micron; The thickness that also is the first metal layer 130 is about 12.4 microns to about 18.4 microns, and the mode that wherein can electroplate forms above-mentioned copper layer, silver layer.According to above embodiment; The thickness that with copper, silver is the first metal layer 130 of material differs about 11 microns to about 29 microns with the thickness that with copper, nickel, gold is the first metal layer 130 of material, be that the first metal layer 130 of material compares with copper, nickel, gold with copper, silver promptly is that the first metal layer 130 of material is thin.At an embodiment, glue-line 120 can comprise BT resin (BT Resin).Yet do not breaking away from the spirit and scope of the present invention; Glue-line 120 can adopt other material, for example can be epoxy resin (Epoxy), polyester (Polyester), acrylic acid ester, the plain polymer (Fluoro-polymer) of fluorine, polyphenylene oxide (Polyphenylene Oxide), polyimides (Polyimide), phenolic resins (Phenolicresin), polysulfones (Polysulfone), the plain polymer (Silicone polymer) of silicon, cyanic acid polyester (Cyanate Ester), polyethylene (Polyethy lene) and bond or similar material.
With reference to Fig. 2, form a groove 210 at substrate 100.For instance,, at first remove the part of second metal level 110,, below part that second metal level 110 is removed, remove the part of glue-line 120 then with etching or laser mode with etching or laser mode in an embodiment.Whereby, form groove 210.
With reference to Fig. 3, form the 3rd metal level 310.At an embodiment, in second metal level 110 and groove 210, plate the 3rd metal level 310 with the mode of electroplating.For instance, at an embodiment, the 3rd metal level 310 comprises copper, nickel, gold; It is a prior art, and the method for packing of this 3rd metal level 310 can form a bronze medal layer earlier in second metal level 110 and groove 210, and its thickness is about 12 microns to 18 microns; Then on this copper layer, form a nickel dam; Its thickness is about 5 microns, on this nickel dam, forms a gold medal layer then, and its thickness is about 0.4 micron; Also promptly the thickness of the 3rd metal level 310 is about 17.4 microns to about 23.4 microns, and the mode that wherein can electroplate forms above-mentioned copper layer, nickel dam, gold layer.At another embodiment; The 3rd metal level 310 comprises silver, and its method for packing can form a silver layer in second metal level 110 and groove 210, and its thickness is about 0.4 micron; Also promptly the thickness of the 3rd metal level 310 is about 0.4 micron, and the mode that wherein can electroplate forms above-mentioned silver layer.The thickness that with silver is the 3rd metal level 310 of material differs about 17 microns to about 23 microns with the thickness that with copper, nickel, gold is the 3rd metal level 310 of material, promptly be that the 3rd metal level 310 of material compares with copper, nickel, gold with silver is that the 3rd metal level 310 of material is thin.
With reference to Fig. 4 A, form penetration line 410 in groove 210 bottoms.At an embodiment, form penetration line 410 in groove 210 bottoms with etching or laser mode, wherein penetration line 410 penetrates the 3rd metal level 310 and the first metal layer 130.Fig. 4 B is the vertical view of Fig. 4 A further groove 210 bottoms.With reference to Fig. 4 B, penetration line 410 cuts into a positive polar region 430 and a negative pole district 440 with groove 210 bottoms.Moreover, can form a plurality of perforation in groove 210 bottoms.At an embodiment, the some on positive polar region 430 forms first perforation 450, and the some in negative pole district 440 forms second perforation 460.For instance, form first perforation 450 with the some of etched mode on the positive polar region 430 of groove 210 bottoms, wherein first perforation 450 penetrates the 3rd metal level 310 and the first metal layer 130.And form second perforation 460 with the some of etched mode in the negative pole district 440 of groove 210 bottoms, wherein second perforation 460 penetrates the 3rd metal level 310 and the first metal layer 130.
Then, Fig. 5-10A is the flow chart of a kind of light emitter diode seal method of one embodiment of the invention.With reference to the 5th figure, LED crystal particle 500 is solidly connected to groove 210 bottoms.At an embodiment, LED crystal particle 500 is fixed in groove 210 bottoms to cover crystal type, make the positive electrode of LED crystal particle 500 be electrically connected to positive polar region 430, and the negative electrode of LED crystal particle 500 is electrically connected to negative pole district 440.
With reference to Fig. 6, provide a glued membrane 600 to be attached at the lower surface of substrate 100, wherein glued membrane 600 can comprise polyimides (Polyimide; PI).Should be appreciated that in the ensuing manufacturing process, glued membrane 600 is an interim instrument, be used for preventing to encapsulate sizing material 800 and spill from penetration line 410, first perforation, 450 and second perforation 460.In an embodiment; With the lower surface that adhesive follows glued membrane 600 at the first metal layer 130, wherein adhesive can be the adhesive that is fit to arbitrarily, similarly is ultraviolet optical cement (ultraviolet glue); It reaches adhesive effect through can solidifying by bone dry behind the UV-irradiation.More than being merely illustration, is not in order to limiting the present invention, anyly has the knack of this technological technical staff, when the adhesion technology of selecting according to practical application to be fit to.
With reference to Fig. 7, a finishing die is provided, it comprises patrix 710 and counterdie 720.In an embodiment, substrate 100 is put into this finishing die carry out pressing mold afterwards.Wherein patrix 710 covers on substrate 100; Specifically; Overlay on the surface of the 3rd metal level 310 on the glue-line 120 on the patrix 710; And patrix 710 has a protuberance 712 corresponding to groove 210; And the die cavity (Cavity) 750 that is constituted between protuberance 712 and the groove 210 comprises above-mentioned penetration line 410, first perforation, 450 and second perforation 460.In addition, counterdie 720 underlies substrate 100, also is that the one side of counterdie 720 links to each other with the lower surface of rubber moulding 600.
It should be noted that; If make thin light emitting diode device with a prior art; Can place a lead frame (Lead Frame) to go up and put into finishing die LED crystal particle and carry out pressing mold afterwards, the slimming because lead frame is bound to, thereby when pressing mold, receive stress influence easily; Make and cause the production dose rate to decline to a great extent by the lead frame torsional deformation.In one embodiment of the invention; When after substrate 100 is put into above-mentioned finishing die, carrying out pressing mold; Because the stress when having second metal level 110, the first metal layer 130, glue-line 120 and the 3rd metal level 310 to bear pressing mold between patrix 710 and the counterdie 720; Make that substrate 100 utmost points are not yielding, cause the production dose rate significantly to improve.In addition, in cutting process afterwards, can form thin light emitting diode device in view of the above.
With reference to Fig. 8, carry out sealing.In an embodiment, will encapsulate sizing material 800 and insert die cavity 750, solidify at encapsulation sizing material 800, promptly after the moulding, leave mould, also promptly remove patrix 710 and counterdie 720.Wherein encapsulate sizing material 800 and can comprise epoxy resin (Epoxy).It should be noted that; Because patrix 710 has a protuberance 712, make on the encapsulation sizing material 800 of above-mentioned curing, to form a recess 810, whereby; Reducing the thickness between recess 810 bottom surfaces and the LED crystal particle 500, also is that the encapsulation sizing material 800 that uses on the diode crystal particle 500 can be thinner.Wherein, above-mentioned thickness for example can be about 70 microns.
It should be noted that aforesaid substrate 100 has penetration line 410, first perforation, 450 and second perforation 460, all penetrates the 3rd metal level 310 and the first metal layer 130.When carrying out sealing, encapsulation sizing material 800 is inserted in penetration line 410, first perforation, 450 and second perforation 460, and encapsulation sizing material 800 produces lateral stress in the side of penetration line 410, first perforation, 450 and second perforation 460.Whereby, after encapsulation sizing material 800 solidifies, will fix firmly, extremely incrust.If penetration line 410, first perforation, 450 and second perforation 460 do not penetrate the 3rd metal level 310 and the first metal layer 130, after sizing material 800 to be packaged solidified, when leaving mould, encapsulation sizing material 800 peeled off easily.
With reference to Fig. 9, in an embodiment, remove glued membrane 600 earlier, carry out the cutting processing procedure again, promptly cut, in order to recess 810 outer thicker parts are removed along the dotted line place; Or, carry out cutting process earlier in another embodiment, and promptly cut along the dotted line place, in order to recess 810 outer thicker parts are removed, remove glued membrane 600 again.Should be appreciated that dotted line shown in Figure 9 is merely illustration, is not in order to limit the present invention, not break away from the spirit and scope of the present invention, when the cutting path of selecting according to practical application to be fit to.
With reference to Figure 10 A, after the cutting processing procedure, form thin light emitting diode device 900.In order to make narration of the present invention more detailed and complete, with reference to Figure 10 B, diagram is according to the perspective view of the thin light emitting diode device 900 of one embodiment of the invention.In Figure 10 B; Thin light emitting diode device 900 comprises LED crystal particle 500, substrate 100 and encapsulation sizing material 800; And substrate 100 comprises the 3rd metal level 310 and the first metal layer 130; Wherein substrate 100 has penetration line 410, first perforation, 450 and second perforation 460, all penetrates the 3rd metal level 310 and the first metal layer 130.And cover substrate 100 on the encapsulation sizing material 800, not only coat LED crystal particle 500, and be filled in penetration line 410, first perforation, 450 and second perforation 460.According to above embodiment, when carrying out pressing mold,, make that the thickness of encapsulation sizing material 800 reduces on the LED crystal particle 500 because patrix 720 has protuberance 750.Moreover the first metal layer 130 adopts copper and silver and the 3rd metal level 310 to adopt silver, can significantly reduce the thickness of substrate 100.
Certainly; The present invention also can have other various embodiments; Under the situation that does not deviate from spirit of the present invention and essence thereof; Those of ordinary skill in the art can make various corresponding changes and distortion according to the present invention, but these corresponding changes and distortion all should belong to the protection range of claim of the present invention.
Claims (8)
1. the method for packing of a thin light emitting diode device is characterized in that, comprises:
One substrate is provided, and said substrate comprises a first metal layer, one second metal level and a glue-line, and said glue-line is positioned on the said the first metal layer, and said second metal level is positioned on the said glue-line;
Form a groove in said second metal level and said glue-line;
Form one the 3rd metal level on said second metal level and in the said groove;
Form a penetration line in said bottom portion of groove and penetrate said the 3rd metal level and said the first metal layer;
Utilization is covered crystal type said LED crystal particle is engaged with said bottom portion of groove;
Attach the lower surface of a glued membrane in said the first metal layer;
Insert said substrate in a finishing die; Wherein said finishing die comprises a patrix and a counterdie; Said patrix overlies the upper surface of said the 3rd metal level on the said glue-line, and said patrix has a protuberance and constitute a die cavity corresponding to said groove, and said counterdie underlies said substrate;
Insert an encapsulation sizing material to said die cavity;
Remove said finishing die;
Remove said glued membrane; And
Carry out cutting step and cut, so that the outer thicker part of said groove is removed, to form said thin light emitting diode device along being positioned at said groove.
2. method according to claim 1 is characterized in that, also comprises:
Form and a plurality ofly bore a hole in said bottom portion of groove and penetrate said the 3rd metal level and said the first metal layer.
3. method according to claim 1 is characterized in that, said the first metal layer comprises:
One bronze medal layer; And
One silver layer, wherein said silver layer are positioned on the said copper layer.
4. method according to claim 1 is characterized in that, said second metal level comprises copper.
5. method according to claim 1 is characterized in that, said the 3rd metal level comprises silver.
6. method according to claim 1 is characterized in that said glue-line comprises the BT resin.
7. method according to claim 1 is characterized in that said glued membrane comprises polyimides.
8. method according to claim 1 is characterized in that, said encapsulation sizing material comprises epoxy resin.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2007103022712A CN101471407B (en) | 2007-12-24 | 2007-12-24 | Method for encapsulating thin type LED device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2007103022712A CN101471407B (en) | 2007-12-24 | 2007-12-24 | Method for encapsulating thin type LED device |
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| Publication Number | Publication Date |
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| CN101471407A CN101471407A (en) | 2009-07-01 |
| CN101471407B true CN101471407B (en) | 2012-02-29 |
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| CN2007103022712A Expired - Fee Related CN101471407B (en) | 2007-12-24 | 2007-12-24 | Method for encapsulating thin type LED device |
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Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103199187B (en) * | 2013-04-19 | 2015-11-25 | 安徽三安光电有限公司 | A kind of LED encapsulation substrate and encapsulating structure and preparation method thereof |
| CN103400779B (en) * | 2013-07-09 | 2014-09-03 | 程君 | Manufacturing method of semiconductor display panel |
| CN104362246B (en) * | 2014-11-21 | 2017-02-22 | 福建天电光电有限公司 | Method for encapsulating LED device with metal substrate |
| TWI699907B (en) * | 2018-01-25 | 2020-07-21 | 致伸科技股份有限公司 | Light source module |
| CN108447661A (en) * | 2018-05-14 | 2018-08-24 | 中山市科旗金属表面处理设备有限公司 | Inductance magnetic core and manufacturing process thereof |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5091341A (en) * | 1989-05-22 | 1992-02-25 | Kabushiki Kaisha Toshiba | Method of sealing semiconductor device with resin by pressing a lead frame to a heat sink using an upper mold pressure member |
| CN1355571A (en) * | 2000-11-23 | 2002-06-26 | 诠兴开发科技股份有限公司 | Packaging method for LED |
| CN1964089A (en) * | 2006-11-23 | 2007-05-16 | 杨建清 | A method for packaging LED on transparent soft thin film substrate |
-
2007
- 2007-12-24 CN CN2007103022712A patent/CN101471407B/en not_active Expired - Fee Related
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5091341A (en) * | 1989-05-22 | 1992-02-25 | Kabushiki Kaisha Toshiba | Method of sealing semiconductor device with resin by pressing a lead frame to a heat sink using an upper mold pressure member |
| CN1355571A (en) * | 2000-11-23 | 2002-06-26 | 诠兴开发科技股份有限公司 | Packaging method for LED |
| CN1964089A (en) * | 2006-11-23 | 2007-05-16 | 杨建清 | A method for packaging LED on transparent soft thin film substrate |
Non-Patent Citations (2)
| Title |
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| JP昭63-90873A 1988.04.21 |
| JP特开2007-95973A 2007.04.12 |
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