CN101471369A - Solid-state imaging device, method of manufacturing the same, and camera and electronic apparatus using the same - Google Patents
Solid-state imaging device, method of manufacturing the same, and camera and electronic apparatus using the same Download PDFInfo
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- CN101471369A CN101471369A CNA2008101873230A CN200810187323A CN101471369A CN 101471369 A CN101471369 A CN 101471369A CN A2008101873230 A CNA2008101873230 A CN A2008101873230A CN 200810187323 A CN200810187323 A CN 200810187323A CN 101471369 A CN101471369 A CN 101471369A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
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- H01L27/14601—Structural or functional details thereof
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
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- H01L27/14601—Structural or functional details thereof
- H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
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- H—ELECTRICITY
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- H—ELECTRICITY
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- H01L27/144—Devices controlled by radiation
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Abstract
The present invention provides a solid-state imaging device for reducing uneven sensitivity by a reduction in level difference between an effective pixel region and a peripheral area, a method of manufacturing such a solid-state imaging device; a camera including such a solid-state imaging device; and an electronic apparatus having such a camera. The method includes: forming an insulating layer extending over an effective pixel region (11) where a plurality of pixels (2) each having a photoelectric conversion element is arranged and a peripheral area (13) adjacent to the effective pixel region (11); forming an opening (21) in the insulating layer (19)located immediately above the photoelectric conversion element on the effective pixel region (11); forming a dummy opening (24) in the insulating layer (19) on the peripheral region (13); and forming a buried layer (22) on the insulating layer to fill the opening (21) and the dummy opening (24) formed in the insulating layer.
Description
Technical field
The present invention relates to be reduced in the plane difference (layer is poor) of the thickness that the borderline region of effective pixel area and outer peripheral areas thereof takes place solid-state imaging device and manufacture method thereof, be equipped with the filming apparatus of this solid-state imaging device and the electronic equipment of built-in this filming apparatus.
Background technology
In the past, for the optical characteristics that improves solid-state imaging devices such as cmos image sensor or ccd image sensor various schemes had been proposed.For example, by the structure of increase to the light quantity of the light of the photoelectric conversion part incident that is made of photodiode is set, thereby realize the raising of sensitivity.
In patent documentation 1 and patent documentation 2, record following structure: in solid-state imaging device, in order to increase the light of injecting photodiode and to improve sensitivity and inject side at the light on photodiode top and be formed with fiber waveguide (optical waveguide).Form peristome by inject side at the light on photodiode top, and form fiber waveguide at the high material of this peristome landfill refractive index.
In patent documentation 3, record the structure that is used for preventing following situation: at the multilayer wired layer of CMOS type solid-state imaging device, under the situation that is provided with Cu distribution and Cu nonproliferation film, reflected by the Cu nonproliferation film owing to inject the light of injecting of photodiode, thereby the light quantity of injecting photodiode reduces.Here, prevent to inject the reduction of the incident light of photodiode by removing the Cu nonproliferation film that is formed on photodiode top.And, in patent documentation 3, also record following step: in order to remove the Cu nonproliferation film that is formed on the photodiode, and after forming multilayer wired layer, remove the Cu nonproliferation film by the multilayer wired layer on the photodiode is carried out opening.And, constitute by multilayer wired layer being carried out be formed with fiber waveguide in the peristome that opening forms.
Form in the step of optical waveguide structure in the step of the Cu nonproliferation film of the light incident side of removing photodiode top that patent documentation 3 is put down in writing or at the light incident side that patent documentation 1,2 is put down in writing on photodiode top, as mentioned above, all occur in the step that peristome and this peristome of landfill are set on the photodiode.
In addition, solid-state imaging device is by formations such as effective pixel area, optical black area (OpticalBlack, optics black), peripheral circuit regions.Figure 12 represents the schematic configuration of solid-state imaging device.For example, at as shown in figure 12 cmos image sensor is in the solid-state imaging device 301, be formed with the imaging region 313 that constitutes by effective pixel area 311 and optical black area 312, in addition, also be formed with peripheral circuit portion such as vertical drive circuit 304 and horizontal drive circuit 306.It is a plurality of pixels that photodiode and pixel transistor (MOS transistor) constitute that imaging region 313 is arranged by photo-electric conversion element two-dimensionally.Optical black area 312 is formed on the part of periphery of effective pixel area 311, and constitutes by photomask and make light not inject pixel.In optical black area 312, can obtain signal as the reference signal of black level (black level).In this solid-state imaging device 301, the light of injecting in effective pixel area 311 is transformed into signal charge, and is exported by peripheral circuit portion as picture element signal.
As mentioned above, though light is incident to photodiode in effective pixel area 311, light is not incident upon photodiode in the optical black area 312 of the periphery that is formed in effective pixel area 311.Therefore, only in effective pixel area 311, constitute as patent documentation 1～3 described structure of the light quantity increase of the light that is incident upon photodiode that makes.Promptly, in order to remove the light nonproliferation film of the light incident side that is in photodiode top, and form carrying out the formation of opening or for the light incident side on photodiode forms optical waveguide structure in photodiode top, and be to be necessary structure with respect to effective pixel area only to the structure that opening is carried out on photodiode top.
Figure 13 represents that above-mentioned cmos image sensor is the manufacturing step figure of the borderline region of the effective pixel area 311 of solid-state imaging device 301 and optical black area 312.Figure 13 for example is the profile along the D-D line among Figure 12, and it is photodiode PD top in the pixel of effective pixel area 311 block diagram when peristome is set.
For convenience of explanation, in Figure 13, only show photodiode PD and multilayer wired layer 320.In fact, constitute multilayer wired layer 320 on the semiconductor substrate that is formed with the multilayer pixel of being made up of photodiode PD and a plurality of pixel transistor, light is injected semiconductor substrate from multilayer wired layer 320 side.As shown in figure 13, multilayer wired layer 320 is formed with three layers of distribution 1M, 2M, 3M across interlayer insulating film 319 ground, and becomes photomask at the distribution 3M of optical black area 312.In optical black area 312, because distribution 3M constitutes photomask, therefore, light just can not injected the photodiode PD that is formed at optical black area 312.
As described in patent documentation 1～3,, at first, as shown in FIG. 13A, on the interlayer insulating film 319 on the photodiode PD top of effective pixel area 311, form peristome 321 in order to increase the light quantity of the photodiode of injecting effective pixel area.Then, shown in Figure 13 B, for example the embedding material that refractive index is higher than interlayer insulating film 319 is coated on the peristome 321, and peristome 321 is by landfill.In the zone of this high index of refraction embedding material landfill, constitute optic waveguide circuit.
Shown in Figure 13 B, at peristome 321 coating embedding materials and form in the step of landfill layer 322, on the multilayer wired layer 320 of optical black area 312, also side by side apply embedding material.Like this, shown in Figure 13 B, in order not form peristome 321 on optical black area 312, the landfill layer 322 that forms on the multilayer wired layer 320 of optical black area 312 applies to such an extent that the landfill layer 322 that forms than the peristome 321 and multilayer wired layer 320 top of effective pixel area 311 is thick.And,, therefore, shown in Figure 13 B, on the boundary member of effective pixel area 311 and optical black area 312, cause on landfill layer 322 surface, forming plane difference (uneven) because the coating of such landfill layer 322 is irregular.
Similarly, Figure 14 is illustrated in the peristome 321 that forms on the multilayer wired layer 320 of effective pixel area 311 forms landfill layer 323 by CVD method or PVD method example.Among Figure 14, to having marked same symbol, and omit repeat specification to it with the corresponding part of Figure 13.
Shown in Figure 14 A, peristome 321 is by CVD method (Chemical VaporDeposition, chemical vapour deposition technique) or PVD method (Physical VaporDeposition, physical vaporous deposition) carries out under the situation of landfill, as shown in Figure 14B, the thickness constant of the landfill layer 323 of film forming.Therefore, peristome 321 and be formed on that to produce density on the landfill layer 323 on the non-peristome poor, and at the borderline region generation plane difference of non-peristome and peristome 321.On the effective pixel area 311 that is formed with peristome 321, the embedding material quilt is film forming loosely, and on the optical black area 312 that is not formed with peristome 321, embedding material is film forming densely.
Then, shown in Figure 14 C,, and adopt CMP method (cmp) to make embedding material film flattening surface for plane difference (so-called concavo-convex) planarization that makes the landfill layer 323 that causes by CVD method or PVD method.But, make by the CMP method under the situation of flattening surface, in the effective pixel area 311 that loosely forms embedding material with form densely on the embedding material optical black area 312, there is the evenly problem of planarization of surface.Shown in Figure 14 C, loosely form the part of embedding material and compare with the part that forms embedding material densely, its grinding rate is very fast.Therefore, consequently, the landfill layer 323 on effective pixel area 311 tops forms thinlyyer than the landfill layer 323 on optical black area 312 tops.
In addition, as shown in figure 13, adopt in the example of application type material as landfill layer 322, in the baking step after landfill layer 322 forms, reduce the volume of landfill layer 322 by heat treatment.At this moment, the volume that is formed on the landfill layer 322 on the peristome 321 has been compared greatly with the volume of landfill layer 322 on being formed on non-peristome and has been equivalent to the peristome size owing to there is such volume, so when curing landfill layer 322 volume reduce also become big.Thus, on effective pixel area 311 that forms peristome 321 densely and the optical black area 312 that is not formed with peristome 321, because reducing of the volume baking step after causes plane difference further to become greatly.
Like this, in the borderline region of effective pixel area, optical black area and the peripheral circuit region of solid-state imaging device, exist at the landfill laminar surface under the situation of plane difference XOR film thickness difference, this plane difference XOR film thickness difference also impacts the film on upper strata.Therefore, for the upper strata that is formed on the landfill layer for example, passivating film, colour filter, single-sheet miniature lens etc. all can be subjected to the influence of landfill laminar surface plane difference.And the plane difference that influences the upper strata is to having influence in the effective pixel area.Consequently, cause the optical characteristics of the pixel on the middle body and periphery in effective pixel area to change, thereby the sensitivity inequality takes place at image from solid-state imaging device output.
As make effective pixel area and comprise optical black area and the outer peripheral areas of peripheral circuit region etc. between the method that reduces of plane difference XOR film thickness difference, in patent documentation 4, record following method: form film between the concave shape insulating barrier corresponding, and reduce the plane difference of effective pixel area and outer peripheral areas with the metal wiring of outer peripheral areas.In addition, in patent documentation 5, record following method:, but on the lower part of plane difference, append the material that can form pattern (patterning) even between effective pixel area and outer peripheral areas, have plane difference.In addition, in patent documentation 6, record the method that the higher part of plane difference is carried out selective etch and cut down.
Yet, in these patent documentations 4～6, in the method for record, have the problem that number of steps is increased for the plane difference that makes effective pixel area and outer peripheral areas reduces.
Patent documentation 1: TOHKEMY 2003-298034 number
Patent documentation 2: Japanese kokai publication hei 7-45805 communique
Patent documentation 3: communique TOHKEMY 2005-311015 communique
Patent documentation 4: TOHKEMY 2001-196571 communique
Patent documentation 5: TOHKEMY 2004-356585 communique
Patent documentation 6: TOHKEMY 2007-165403 communique
Summary of the invention
The present invention in view of the above problems, its purpose is to provide solid-state imaging device and the manufacture method thereof that reduces the sensitivity inequality by the plane difference of the borderline region that reduces effective pixel area and outer peripheral areas.In addition, the present invention also provides the filming apparatus that is equipped with such solid-state imaging device and the electronic equipment of built-in this filming apparatus.
In order to address the above problem and realize purpose of the present invention, solid-state imaging device of the present invention comprises effective pixel area, is arranged with a plurality of pixels with photo-electric conversion element; The outer peripheral areas of effective pixel area; Peristome, be formed on photo-electric conversion element in the effective pixel area directly over insulating barrier in; Pseudo-peristome is formed in the insulating barrier on top of outer peripheral areas; And the landfill layer, be used for landfill peristome and pseudo-peristome.
The middle outer peripheral areas of solid-state imaging device of the present invention is for example to be the zone that is made of peripheral circuit portion, optical black area etc., and it is the zone that incident light can't be injected.
In solid-state imaging device of the present invention, be formed with peristome in the insulating barrier on effective pixel area, and also be provided with pseudo-peristome in the insulating barrier on outer peripheral areas, so be minimized at the plane difference of the boundary member landfill layer of effective pixel area and outer peripheral areas.
In addition, the manufacture method of solid-state imaging device of the present invention forms the step of insulating barrier in the mode of the outer peripheral areas of crossing over effective pixel area and effective pixel area, wherein, in effective pixel area, is arranged with a plurality of pixels with photoelectric conversion part; Form peristome at the insulating barrier that is arranged in directly over the photoelectric conversion part of effective pixel area, and in the insulating barrier of outer peripheral areas, form the step of pseudo-peristome; And the step that on insulating barrier, forms the landfill layer for landfill is formed on peristome in the insulating barrier and pseudo-peristome.
In the manufacture method of solid-state imaging device of the present invention, directly over the photoelectric conversion part of effective pixel area, be formed with peristome, and in the insulating barrier of outer peripheral areas, also be formed with pseudo-peristome.Therefore, it is poor to reduce the density that is formed on the peristome on effective pixel area and the outer peripheral areas, and can be formed flatly the landfill layer that is formed on insulating barrier top.
In addition, filming apparatus of the present invention comprises: solid-state imaging device; Optical system is used for the lead photoelectric conversion part of solid-state imaging device of incident light; And signal processing circuit, be used for the output signal of solid-state imaging device is handled, wherein, solid-state imaging device comprises: effective pixel area is arranged with a plurality of pixels with photo-electric conversion element; The outer peripheral areas of effective pixel area; Peristome is formed in the insulating barrier directly over the photo-electric conversion element in the effective pixel area; Pseudo-peristome is formed in the insulating barrier on top of outer peripheral areas; And the landfill layer, be used for landfill peristome and pseudo-peristome.
And, in electronic equipment of the present invention, be built-in with filming apparatus, wherein, filming apparatus comprises: solid-state imaging device; Optical system is used for the lead photo-electric conversion element of solid-state imaging device of incident light; And signal processing circuit, being used for the output signal of solid-state imaging device is handled, solid-state imaging device comprises: effective pixel area is arranged with a plurality of pixels with photo-electric conversion element; The outer peripheral areas of effective pixel area; Peristome, be formed on photo-electric conversion element in the effective pixel area directly over insulating barrier in; Pseudo-peristome is formed in the insulating barrier on top of outer peripheral areas; And the landfill layer, be used for landfill peristome and pseudo-peristome.
At filming apparatus of the present invention or be equipped with in the electronic equipment of this filming apparatus, the solid-state imaging device that can use the boundary member plane difference in effective pixel area and outer peripheral areas to be minimized.
According to the present invention, therefore the plane difference at the effective pixel area of solid-state imaging device and the boundary member thickness between the outer peripheral areas is minimized, thereby can reduce the sensitivity inequality.
Description of drawings
Fig. 1 is the summary construction diagram of the solid-state imaging device that relates to of one embodiment of the invention;
Fig. 2 A, Fig. 2 B, Fig. 2 C are the step of manufacturing figure of the solid-state imaging device that relates to of the expression first embodiment of the present invention;
Fig. 3 A, Fig. 3 B, Fig. 3 C are the step of manufacturing figure of the solid-state imaging device that relates to of the expression second embodiment of the present invention;
Fig. 4 A, Fig. 4 B, Fig. 4 C are the step of manufacturing figure of the solid-state imaging device that relates to of the expression third embodiment of the present invention;
Fig. 5 A, Fig. 5 B are another routine summary construction diagrams of the manufacture method of the solid-state imaging device that relates to of the expression third embodiment of the present invention;
Fig. 6 A, Fig. 6 B, Fig. 6 C are the step of manufacturing figure of the solid-state imaging device that relates to of the expression fourth embodiment of the present invention;
Fig. 7 is another routine summary construction diagram of the manufacture method of the solid-state imaging device that relates to of the expression fourth embodiment of the present invention;
Fig. 8 is another routine summary construction diagram of the manufacture method of the solid-state imaging device that relates to of the expression fourth embodiment of the present invention;
Fig. 9 is another routine summary construction diagram of the manufacture method of the solid-state imaging device that relates to of the expression fourth embodiment of the present invention;
Figure 10 is the summary construction diagram of the electronic equipment of the employing cmos image sensor that relates to of expression one embodiment of the invention;
Figure 11 is the summary construction diagram of the electronic equipment of the employing ccd image sensor that relates to of expression one embodiment of the invention;
Figure 12 is the summary construction diagram of the solid-state imaging device of conventional example;
Figure 13 A, Figure 13 B are the summary construction diagrams of the solid-state imaging device manufacture method of expression conventional example; And
Figure 14 A, Figure 14 B, Figure 14 C are the summary construction diagrams of manufacture method of the solid-state imaging device of expression conventional example.
Embodiment
Below, referring to figs. 1 through Figure 11 embodiments of the invention are described.
At first, Fig. 1 represents that the summary of the solid-state imaging device that one embodiment of the invention relate to constitutes.
The solid-state imaging device 1 of present embodiment is an example with the cmos image sensor, for example, it comprises imaging region 3 and the peripheral circuit portion 14 that is made of effective pixel area 11 and optical black area 12 on silicon substrate 100, wherein, in effective pixel area 11, being rectangular ground two-dimensional arrangements has a plurality of imaging pixels 2 that comprise photo-electric conversion element.In the present embodiment, with optical black area 12 and peripheral circuit portion 14 altogether as outer peripheral areas 13.
Imaging region 3 comprises effective pixel area 11 and is formed in the optical black area 12 of the outer part of effective pixel area 11.Constitute at each imaging pixel 2 of imaging region 3 and to comprise: photodiode constitutes photo-electric conversion element; And a plurality of pixel transistors (MOS transistor), will be transformed to picture element signal and export to vertical signal line 9 by the signal charge that photodiode carries out after the light-to-current inversion.In effective pixel area 11, the incident light of injecting photodiode is transformed into signal charge, and is transformed into picture element signal by pixel transistor, and this picture element signal is provided for peripheral circuit portion 14 by vertical signal line 9.Though optical black area 12 can be made of image-forming component 2 with effective pixel area 11 same formation ground, owing to constitute photomask, so constitute not to injecting light at the photodiode of optical black area 12.And, by such structure, from the black reference signal of optical black area 12 outputs.In addition, as a plurality of pixel transistors, can be by for example passing on these four kinds of transistors formations of transistor, reset transistor, amplifier transistor and selection transistor.Perhaps can omit and select transistor and constitute by three kinds of transistors.
And peripheral circuit 14 constitutes and comprises vertical drive circuit 4, column signal treatment circuit 5, horizontal drive circuit 6, output circuit 7 and control circuit 8.
Column signal treatment circuit 5 for example disposes with respect to every row in imaging pixel 2.And,,, the signal of exporting from the pixel of delegation is carried out signal processing according to signal from optical black area 12 with respect to every row pixel.That is, in column signal treatment circuit 5, according to signal processing such as noise remove that carries out effective pixel area 11 from the black reference signal of optical black area 12 outputs and signal amplifications.
At the output of column signal treatment circuit 5, and horizontal signal lines between be connected with horizontal selector switch (not shown).
Output circuit is to being undertaken exporting after the signal processing by horizontal signal lines 10 signal supplied successively from each column signal treatment circuit 5.
Below, each the routine solid-state imaging device and the manufacture method thereof of present embodiment are described simultaneously.
[first embodiment]
Fig. 2 represents to illustrate the solid-state imaging device that first embodiment relates to and the summary cross-section structure of manufacture method thereof.The summary cross-section structure of solid-state imaging device as shown in Figure 2 is to constitute along the A-A line among Fig. 1 or along the section of B-B line, that is, the section on effective pixel area 11 and the line that set up by the outer peripheral areas 13 that optical black area 12 and peripheral circuit portion 14 constitute constitutes.In Fig. 2, for convenience of explanation, the photoelectric conversion part that only illustrates the imaging pixel 2 in the solid-state imaging device be photodiode PD and on multilayer wired layer 20 part.In fact, be formed with multilayer wired layer 20 on the Si substrate 100 of element being formed with, wherein, this element comprises the pixel transistor that constitutes imaging pixel 2 and the CMOS transistor of formation peripheral circuit portion 14.
Multilayer wired layer 20 as shown in Figure 2 is made of across interlayer insulating film 19 respectively three- layer metal distribution 1M, 2M, 3M.
At first, in the present embodiment, shown in Fig. 2 A, with the corresponding multilayer wired layer 20 in the photodiode PD top of effective pixel area 11 in form the peristome 21 of opening directly over photodiode PD.And, simultaneously, outer peripheral areas 13, in the multilayer wired layer 20 of the optical black area 12 of present embodiment, also similarly form pseudo-peristome 24 with effective pixel area 11.That is to say, in the present embodiment, in effective pixel area 11 and outer peripheral areas 13, be formed with peristome 21 and pseudo-peristome 24 with same interval.
Then, shown in Fig. 2 B, at the peristome 21 and pseudo-peristome 24 places of effective pixel area 11 and outer peripheral areas 13, the embedding material by for example coating-type forms landfill layer 22.Except coating-type, also can form landfill layer 22 by CVD method or PVD method.At this moment, on non-peristome 15 also simultaneously film forming landfill layer 22 is arranged.In addition, for the peristome 21 on the photodiode PD top of effective pixel area 11 becomes fiber waveguide, for example, the organic material that is higher than the interlayer insulating film 19 that constitutes multilayer wired layer 20 by refractive index forms landfill layer 22.Landfill layer 22 for example can be made of the resin of highs index of refraction such as siloxane resin or polyimides, acrylic resin, polystyrene resins.Under the situation of using siloxane resin, can adjust refractive index by additive, the refractive index that contains the siloxane-based resin of additive for example can be 1.7.In addition, in above-mentioned resin, for example can improve refractive index by containing metal oxide particles such as titanium oxide, tantalum oxide, niobium oxide, tungsten oxide, zirconia, zinc oxide, indium oxide, hafnium oxide.As interlayer insulating film 19, can use for example silicon dioxide (SiO
2) (refractive index 1.4).
By constituting the organic material in peristome 21 landfill highs index of refraction, thereby can constitute fiber waveguides at peristome 21, therefore, by fiber waveguide, incident light is refracted, thereby can more effectively light be injected the photodiode PD of effective pixel area 11.
And, after flatly landfill is formed at peristome 21, pseudo-peristome 24 and the non-peristome 15 of effective pixel area 11 and outer peripheral areas 13 by landfill layer 22, shown in Fig. 2 C, be formed with photomask 18 on multilayer wired layer 20 top of outer peripheral areas 13.By being formed with photomask 18, thus because light can't be injected the photodiode PD that is formed at optical black area 12, therefore, can be from optical black area 12 output black levels.
Then, though not shown, can form passivating film, colour filter and single-sheet miniature lens etc. successively, thereby obtain desired solid-state imaging device.
According to first embodiment, even in the outer peripheral areas 13 of original unnecessary peristome, also can be forming pseudo-peristome 24 with the same interval of the peristome that in effective pixel area 11, forms 21, thus the density of the peristome of multilayer wired layer 20 can be reduced.Therefore, after the step of landfill embedding material in, embedding material flatly.In addition, coating after the embedding material after when curing (post-baking), even under the situation of the volume-diminished of landfill layer 22, in effective pixel area 11 and outer peripheral areas 13, volume dwindles with same ratio.Therefore, at the boundary member of effective pixel area 11 and outer peripheral areas 13, can prevent from the landfill layer 22 on the multilayer wired layer 20, to produce plane difference.
Therefore, in step thereafter, can prevent following situation: not shown passivating film, colour filter and single-sheet miniature lens etc., the plane difference that plane difference influence is formed at the top of landfill layer 22 involves and has influence in the effective pixel area 11, the sensitivity inequalities take place.
And even forming under the situation of landfill layer 22 by CVD method or PVD method, in effective pixel area 11 and outer peripheral areas 13, it is poor to reduce the concavo-convex density that forms on the landfill layer 22 on peristome 21, the pseudo-peristome 24.Therefore, after forming landfill layer 22, when for example carrying out planarization, can carry out planarization equably by the CMP processing.In addition, even in outer peripheral areas 13, be provided with pseudo-peristome 24, because at these puppet peristome 24 places also landfill landfill layer 22, so when carrying out the CMP processing, can prevent the film skew at the interface of the multilayer wired layer 20 and the landfill layer 22 of outer peripheral areas 13.
[second embodiment]
Below, Fig. 3 shows the summary cross-section structure that the manufacture method of the solid-state imaging device that the second embodiment of the present invention is related to describes.The summary cross-section structure of solid-state imaging device as shown in Figure 3 similarly is to constitute along the A-A line among Fig. 1 or along the section of B-B line with first embodiment also, that is, the section on effective pixel area 11 and the line that set up by the outer peripheral areas 13 that optical black area 12 and peripheral circuit portion 14 constitute constitutes.In Fig. 3, the part identical with Fig. 2 marked identical label and omitted repeat specification it.
As shown in Figure 3A, form in the present embodiment: be formed on multilayer wired layer 20, uppermost metal wiring 3M formation photomask 18 on the outer peripheral areas 13.And, at first, as shown in Figure 3A, in so multilayer wired layer 20, in multilayer wired layer 20 interlayer insulating film 19 of outer peripheral areas 13, be provided with pseudo-peristome 24.Directly over metal wiring 3M, form this puppet peristome 24 by opening, so that do not arrive photomask 18.
Then, shown in Fig. 3 B, be provided with the peristome 21 of opening directly over photodiode PD at multilayer wired layer 20 interlayer insulating film 19 places on the photodiode PD top that is positioned at effective pixel area 11.
Here, in the present embodiment, form peristome 21 and pseudo-peristome 24, so that make the pseudo-peristome 24 of the multilayer wired layer 20 that is formed at outer peripheral areas 13 and be formed at the opening capacity of peristome 21 of multilayer wired layer 20 of effective pixel area 11 roughly the same.
Like this, on multilayer wired layer 20, constitute photomask 18 in outer peripheral areas 13, and under the situation that is difficult on outer peripheral areas 13 and the effective pixel area 11 to constitute with the peristome of spline structure, also the step of opening can be divided into for two steps, and peristome 21 and pseudo-peristome 24 are set.
Next, shown in Fig. 3 C, at the peristome 21 and pseudo-peristome 24 places of effective pixel area 11 and outer peripheral areas 13, the embedding material by for example coating-type forms landfill layer 22.Also can form landfill layer 22 by CVD method or PVD method.At this moment, on non-peristome 15 also simultaneously film forming landfill layer 22 is arranged.In addition, for the peristome 21 on the photodiode PD top of effective pixel area 11 becomes fiber waveguide, for example, the organic material that is higher than the interlayer insulating film 19 that constitutes multilayer wired layer 20 by refractive index forms landfill layer 22.Landfill layer 22 for example can be made of the resin of highs index of refraction such as siloxane resin or polyimides, acrylic resin, polystyrene resins.Under the situation of using siloxane resin, can adjust refractive index by additive, the refractive index that contains the siloxane-based resin of additive for example can be 1.7.In addition, in above-mentioned resin, for example can improve refractive index by containing metal oxide particles such as titanium oxide, tantalum oxide, niobium oxide, tungsten oxide, zirconia, zinc oxide, indium oxide, hafnium oxide.As interlayer insulating film 19, can use for example silicon dioxide (SiO
2) (refractive index 1.4).
By constituting organic material, thereby, inject light and be refracted, thereby can more effectively light be injected the photodiode PD of effective pixel area 11 by fiber waveguide in peristome 21 landfill highs index of refraction.
In the present embodiment, at the metal wiring 3M of the topmost of outer peripheral areas 13 as photomask 18.By formation photomask 18, thereby, therefore, can export black level because light can't be injected the photodiode PD that is formed at optical black area 12.
According to present embodiment,, also can form pseudo-peristome 24 with the roughly the same opening capacity of the peristome that in effective pixel area 11, forms 21 even in the outer peripheral areas 13 of original unnecessary peristome.Thus, even when curing under the situation of the volume-diminished of the landfill layer 22 of peristome 21 and pseudo-peristome 24, in effective pixel area 11 and outer peripheral areas 13, the volume of landfill layer 22 reduces and is equivalent to roughly the same capacity.Therefore, even after baking step, also can prevent from landfill layer 22, plane difference to take place on the border of effective pixel area 11 and outer peripheral areas 13.
And even forming under the situation of landfill layer 22 by CVD method or PVD method, in effective pixel area 11 and outer peripheral areas 13, the density that can reduce peristome 21, pseudo-peristome 24 is poor.Therefore, after forming landfill layer 22, even, also can carry out planarization equably to landfill layer 22 for example being undertaken under the situation of planarization by the CMP processing.In addition, even in outer peripheral areas 13, be provided with pseudo-peristome 24, because at these puppet peristome 24 places also landfill landfill layer 22, so the multilayer wired layer 20 of outer peripheral areas 13 and the interface of landfill layer 22 have concaveconvex shape.Therefore, in the multilayer wired layer 20 of outer peripheral areas 13 and the performance that has improved anti-cross force at the interface of landfill layer 22, so when carrying out the CMP processing, can prevent the film skew.
In addition, owing to form peristome 21, pseudo-peristome 24 at twice in the present embodiment, so can change the opening degree of depth of peristome 21 and pseudo-peristome 24.Therefore, present embodiment also goes for following situation: can constitute the metal wiring of lower floor densely on outer peripheral areas 13, and can't fully guarantee the open area on depth direction.
[the 3rd embodiment]
Below, Fig. 4 shows the summary cross-section structure that the manufacture method of the solid-state imaging device that the third embodiment of the present invention is related to describes.The summary cross-section structure of solid-state imaging device as shown in Figure 4 similarly is to constitute along the A-A line among Fig. 1 or along the section of B-B line with first and second embodiment also, that is, the section on effective pixel area 11 and the line that set up by the outer peripheral areas 13 that optical black area 12 and peripheral circuit portion 14 constitute constitutes.In Fig. 4 to having marked identical label with the corresponding part of Fig. 2, Fig. 3 and having omitted repeat specification to it.
As shown in Figure 4, form in the present embodiment: among the three-layer metal distribution 1M that is formed on the multilayer wired layer 20 on the outer peripheral areas 13,2M, 3M, middle distribution 2M constitutes photomask 18.And, in so multilayer wired layer 20, at first shown in Fig. 4 A, pseudo-peristome 24 is set at multilayer wired layer 20 interlayer insulating film 19 places of outer peripheral areas 13.These puppet peristome 24 openings do not constitute photomask 18 so that do not arrive by metal wiring 2M directly over photomask 18.
Then, shown in Fig. 4 B, be provided with the peristome 21 of opening directly over photodiode PD at multilayer wired layer 20 place on the photodiode PD top that is positioned at effective pixel area 11.
Here, in the present embodiment, preferably constitute the multilayer wired layer 20 that is formed at outer peripheral areas 13 interlayer insulating film 19 pseudo-peristome 24 and to be formed at the opening capacity of peristome 21 of interlayer insulating film 19 of multilayer wired layer 20 of effective pixel area 11 for example roughly the same.
Like this, even be not positioned at the photomask 18 that is formed at outer peripheral areas 13 under the situation of the superiors of the metal wiring that constitutes multilayer wired layer 20, opening gets final product directly over photomask 18.
And, at the peristome 21 of the multilayer wired layer 20 that is formed at effective pixel area 11 and the pseudo-peristome 24 places coating embedding material that is formed at the multilayer wired layer 20 of outer peripheral areas 13.At this moment, in order to constitute fiber waveguide, and preferably peristome 21 place's landfills on the photodiode PD top of effective pixel area 11 for example refractive index be higher than the organic material of the high index of refraction of the interlayer insulating film 19 that constitutes multilayer wired layer 20.By constituting organic material in peristome 21 landfill highs index of refraction, thus in effective pixel area 11 by fiber waveguide, inject light and be refracted, thereby can more effectively light be injected the photodiode PD of effective pixel area 11.
In the present embodiment, with the metal wiring 2M of outer peripheral areas 13 as photomask 18.By formation photomask 18, thereby for example,, therefore, can export black level because light can't be injected the photodiode PD that is formed at optical black area 12.
According to the 3rd embodiment, even in the outer peripheral areas 13 of original unnecessary peristome, also constitute pseudo-peristome 24, thereby can lower the density of the peristome of multilayer wired layer 20, so can flatly apply embedding material, and can reduce the plane difference between effective pixel area 11 and the outer peripheral areas 13.And, when constituting the opening capacity that to be formed at the peristome 21 of multilayer wired layer 20 of effective pixel area 11 and outer peripheral areas 13 and pseudo-peristome 24 when being set at about equally, even when curing, under the situation of the volume-diminished of landfill layer 22, also can in effective pixel area 11 and outer peripheral areas 13, similarly control the volume that dwindles.Therefore, even after the baking step of landfill layer 22, also can reduce the plane difference on landfill layer 22 surface of the boundary member of effective pixel area 11 and outer peripheral areas 13.
In addition, Fig. 5 A represents that Fig. 5 B represents its cross-section structure along the C-C line from the figure of top observation as the metal wiring 3M the multilayer wired layer 20 of the peripheral circuit portion 14 of outer peripheral areas 13.Constitute the situation of photomask 18, promptly loosely constitute under the situation of metal wiring 3M at the distribution 3M by the superiors not, as shown in the figure, also can be formed on the pseudo-peristome 24 that forms in the outer peripheral areas 13 along this metal wiring 3M.
That is, by constituting opening capacity and the opening density that optimally is formed in the outer peripheral areas 13 pseudo-peristome 24 that forms and the peristome 21 that in effective pixel area 11, forms, thereby can on multilayer wired layer 20, be formed flatly landfill layer 22.
[the 4th embodiment]
Below, Fig. 6 shows the summary cross-section structure that the manufacture method of the solid-state imaging device that the fourth embodiment of the present invention is related to describes.The summary cross-section structure of solid-state imaging device as shown in Figure 6 similarly is to constitute along the A-A line among Fig. 1 or along the section of B-B line with first to the 3rd embodiment also, that is, the section on effective pixel area 11 and the line that set up by the outer peripheral areas 13 that optical black area 12 and peripheral circuit portion 14 constitute constitutes.In Fig. 6 to having marked identical label with the corresponding part of Fig. 2 to Fig. 4 and having omitted repeat specification to it.
As shown in Figure 6A, present embodiment is following example: among the three-layer metal distribution 1M that is formed on the multilayer wired layer 20 on the outer peripheral areas 13,2M, 3M, the distribution 3M of the superiors constitutes photomask 18.
At first, as shown in Figure 6A, on the top of the photodiode PD of effective pixel area 11 and outer peripheral areas 13, become big mode with A/F and form the first opening portion 21a and the pseudo-peristome 24 that the tapered shape of sidewall forms towards the open side of injecting light.Can form the first opening portion 21a and the pseudo-peristome 24 of this cone-shaped by combination isotropic etching and anisotropic etching.Forming the first opening portion 21a of cone-shaped and pseudo-peristome 24 does not form and contacts with the metal wiring of multilayer wired layer 20.That is, pseudo-peristome 24 openings that form in outer peripheral areas 13 are directly over as the metal wiring 3M of photomask 18, and the first opening portion 21a that is formed on effective pixel area 11 also forms identical shape.
Then, shown in Fig. 6 B, the first opening portion 21a with cone-shaped that is formed in the effective pixel area 11 is further carried out etching towards photodiode PD side, and form the second opening portion 21b of opening directly over photodiode PD in the vertical mode of sidewall.Therefore, in effective pixel area 11, form the peristome 21 that the first opening portion 21a by forming cone-shaped and the second opening portion 21b form.
Then, shown in Fig. 6 C, the pseudo-peristome 24 places coating embedding material that forms in the interlayer insulating film 19 of the peristome 21 that in the multilayer wired layer 20 of effective pixel area 11, forms and the multilayer wired layer 20 of outer peripheral areas 13, and form landfill layer 22.At this moment, in order to constitute fiber waveguide, and preferably peristome 21 place's landfills on the photodiode PD top of effective pixel area 11 for example refractive index be higher than the organic material of the high index of refraction of the interlayer insulating film 19 that constitutes multilayer wired layer 20.By constituting organic material in peristome 21 landfill highs index of refraction, thus in effective pixel area 11 by fiber waveguide, inject light and be refracted, thereby can more effectively light be injected the photodiode PD of effective pixel area 11.
In the present embodiment, with the metal wiring 3M of outer peripheral areas 13 as photomask 18.By formation photomask 18, thereby for example,, therefore, can export black level because light can't be injected the photodiode PD that is formed at optical black area 12.
According to the 4th embodiment, even in the outer peripheral areas 13 of original unnecessary peristome, also constitute pseudo-peristome 24, thereby can lower the density of the peristome of multilayer wired layer 20, so can flatly apply embedding material, and can reduce the plane difference between effective pixel area 11 and the outer peripheral areas 13.And, when constituting the opening capacity that to be formed at the peristome 21 of multilayer wired layer 20 of effective pixel area 11 and outer peripheral areas 13 and pseudo-peristome 24 when being set at about equally, even when curing, under the situation of the volume-diminished of embedding material, also can in effective pixel area 11 and outer peripheral areas 13, similarly control the volume that dwindles.Therefore, even after the baking step of landfill layer 22, also can reduce the plane difference on landfill layer 22 surface of the boundary member of effective pixel area 11 and outer peripheral areas 13.
In addition, in the present embodiment, because the opening operation of effective pixel area 11 is divided into twice, so the peristome 21 of effective pixel area 11 can be made the shape that helps optical characteristics.In the present embodiment, by setting the light entrance port part of fiber waveguide for cone-shaped, thereby can widely form the opening of incident light incident.Therefore, can increase the light quantity that is incident to photodiode through fiber waveguide.In effective pixel area 11, by the first opening portion 21a is formed cone-shaped, thereby even in the sidewall incident light reflection of the first opening portion 21a, it can be favourable from the collection efficiency aspect to photodiode PD lateral reflection also.
In above-mentioned the 4th embodiment, also cone-shaped first opening portion 21a and the pseudo-peristome 24 that forms can be made lens shape in primary opening step.When this first opening portion 21a is made lens shape, because bore broadens and the effect of lens is combined makes the light harvesting to photodiode PD be more prone between opening.
And, when in effective pixel area 11, being processed to form peristome 21, carrying out pupil in the first time during opening and proofread and correct (pupil correction) by twice.In the past, the not shown single-sheet miniature lens that are formed on the light entrance face on upper strata of landfill layer 22 carry out the correction of following pupil: at the core of effective pixel area 11, the optical axis center of single-sheet miniature lens and the optical axis of photodiode are matched, along with outer part, the center of single-sheet miniature lens and the direction of chief ray are moved with matching towards effective pixel area 11.That is, the single-sheet miniature lens shaped become based on from the central part of effective pixel area 11 to the periphery portion move, the central side of the center of lens mind-set effective pixel area 11 from photodiode PD moves.As described in present embodiment, be provided with under the situation of peristome 21 by twice opening operation, for example as shown in Figure 7, along with leaving to the periphery from central authorities, the center 31 of the first opening portion 21a of opening forms from photodiode PD and removes for the first time, so that become the optical axis center of single-sheet miniature lens.The center of the first opening portion 21a of central portion forms consistent with the center of photodiode PD.When second time during opening, the center 30 of the second opening portion 21b is consistent with the optical axis of photodiode PD.Like this, owing to form peristome 21 by twice processing, thereby opening and on the first opening portion 21a that forms for the first time is difficult to escape by the light of single-sheet miniature lens institute light harvesting.Therefore, can form effectively and allow incident light be incident to peristome 21.And at the outer part of effective pixel area 11, the light of assembling by the lenticule after being proofreaied and correct by pupil can be incident to photodiode effectively.
In addition, as shown in Figure 8, under the situation that the pseudo-peristome 24 in can't guaranteeing to be formed on the multilayer wired layer 20 of outer peripheral areas 13 deepens, as long as form the pseudo-peristome 24 of outer peripheral areas 13 wideer than the peristome 21 that is formed in the effective pixel area 11.Like this, the opening shape of pseudo-peristome 24 of opening shape ground optimization outer peripheral areas 13 of the peristome 24 of effective pixel area 11 can be do not taken into account, thereby the plane difference on landfill layer (buried layer) 22 surfaces of the boundary member of effective pixel area 11 and outer peripheral areas 13 can be reduced.
And as shown in Figure 9, the opening pattern that forms the tapered pseudo-peristome 24 of the sidewall of outer peripheral areas 13 imperceptibly to be having interference of light effect, and can be further forms pseudo-peristome 24 densely than the peristome 21 of effective pixel area 11.Like this, the opening pattern by the pseudo-peristome 24 that the sidewall of outer peripheral areas 13 is tapered forms in the mode with interference of light effect, can suppress the reflection of oblique light, and can suppress to become the reflection of the photomask of veiling glare (flare) reason.
Like this, peristome 21 and pseudo-peristome 24 are set, thereby can optimally be out of shape the shape of the peristome 21 and the pseudo-peristome 24 of effective pixel area 11 and outer peripheral areas 13 with twice opening operation.That is to say, can increase the degree of freedom of the opening shape of effective pixel area 11, and can improve light harvesting, colour mixture characteristic and shade (shading).
Shown in first embodiment to the, four embodiment, after flatly covering peristome 21 and pseudo-peristome 24 by landfill layer 22, lamination formation passivating film, colour filter and single-sheet miniature lens are finished solid-state imaging device as shown in Figure 1 respectively.
And, the solid-state imaging device 1 of the manufacture method manufacturing of the solid-state imaging device of use shown in first embodiment to the, four embodiment can influence to lamination formation plane difference at an upper portion thereof so can reduce owing to can reduce the plane difference of the borderline region landfill layer 22 of effective pixel area 11 and outer peripheral areas 13.Therefore, plane difference can not influence to effective pixel area 11, and can reduce the sensitivity inequality of solid-state imaging device.
Though solid-state imaging device and manufacture method thereof shown in above-mentioned first embodiment to the, four embodiment show the situation that forms fiber waveguide on the photodiode of effective pixel area 11, the present invention is not limited in the step that peristome 21 is set in order to form fiber waveguide.
For example, under the situation of the metal wiring that forms wiring layer with the Cu distribution, there is the situation that all forms the Cu nonproliferation film with respect to each Cu wiring layer.When this Cu nonproliferation film was positioned at light incident side on the photodiode of effective pixel area, because change of refractive etc., the light quantity that causes injecting the incident light of photodiode reduced.
Therefore, in the past, by the wiring layer directly over the photodiode of effective pixel area being carried out the Cu nonproliferation film that opening removes the photodiode top that is in effective pixel area.Even under these circumstances, shown in first embodiment to the, four embodiment, by also forming pseudo-peristome, thereby in landfill layer film forming step thereafter, can reduce the plane difference of landfill laminar surface of the borderline region of effective pixel area and outer peripheral areas in outer peripheral areas.In this case, though on peristome, form insulating material, shown in first embodiment～the 4th embodiment, also can use the high organic material of refractive index as insulating material as the landfill layer.
And, even under above-mentioned such situation, also can the samely can reduce the plane difference of the borderline region of effective pixel area and outer peripheral areas with the solid-state imaging device that adopts the manufacture method manufacturing of solid-state imaging device shown in first embodiment to the, four embodiment.Therefore, also can be formed flatly passivating film, colour filter and the single-sheet miniature lens of lamination at an upper portion thereof.Consequently, the plane difference that the solid-state imaging device surface occurs can not have influence in the effective pixel area, and can reduce the sensitivity inequality time limit.
As the solid-state imaging device of present embodiment, though be that example is illustrated with the cmos image sensor, the present invention also goes for having the situation of the ccd image sensor of fiber waveguide directly over the photodiode as photoelectric conversion part.
In the present invention, the form of the outer peripheral areas 13 of effective pixel area 11 comprises and has only with the situation of the optical black area 12 of effective pixel area 11 adjacency, do not have only with the situation of the peripheral circuit portion 14 of effective pixel area 11 adjacency by optical black area 12 or cross over the situation of optical black area 12 and peripheral circuit portion 14.Therefore, pseudo-peristome 24 under the situation about forming on the optical black area 12, only under the situation about forming on the peripheral circuit portion 14 or crossing under the situation that the part of optical black area 12 and peripheral circuit portion 14 forms or the like, can adopt various forms only.
Next, the schematic configuration of filming apparatus of the present invention has been shown in Figure 10 and Figure 11.
The filming apparatus of present embodiment has adopted the solid-state imaging device of making in above-mentioned first embodiment to the, four embodiment, Figure 10 is with the example of cmos image sensor as solid-state imaging device, and Figure 11 then is with the example of ccd image sensor as solid-state imaging device.
As shown in figure 10, filming apparatus 50 constitutes cmos image sensor 52 and the signal processing circuit 53 that comprises optical system 51, the present invention relates to.The filming apparatus of present embodiment comprises the form with optical system 51, cmos image sensor 52 and signal processing circuit 53 Componentized filming apparatus assemblies.Optical system 51 will be imaged on the imaging surface of cmos image sensor 52 from the image light (incident light) of subject.Thus, in the photodiode of the photoelectric conversion part of cmos image sensor 52,, incident light is transformed into signal charge according to incident light quantity.And this signal charge is exported by vertical drive circuit, horizontal drive circuit, column signal treatment circuit that is formed in cmos image sensor 52 and the control circuit of controlling these circuit.The output signal of being exported is undertaken being output as picture signal after the various signal processing by signal processing circuit 53.
As shown in figure 11, filming apparatus 40 constitutes ccd image sensor 42, CCD drive circuit 43 and the signal processing circuit 44 that comprises optical system 41, the present invention relates to.The filming apparatus of present embodiment comprises the form with optical system 41, ccd image sensor 42, CCD drive circuit 43 and signal processing circuit 44 Componentized filming apparatus assemblies.Optical system 41 will be imaged on the imaging surface of ccd image sensor 42 from the image light (incident light) of subject.Thus, in the photodiode of the photoelectric conversion part of ccd image sensor 42,, incident light is transformed into signal charge according to incident light quantity.The signal charge of CCD drive circuit 43 after will being subjected to light by ccd image sensor 42 is after the vertical electric charge transfering department is read, send horizontal electric charge transfering department to after transmitting in the vertical electric charge transfering department, the step of going forward side by side is used for the driving that transmits in horizontal electric charge transfering department.By signal processing circuit 44, the output signal of ccd image sensor 42 is carried out various signal processing and is used as picture signal and exported.
As mentioned above, in Figure 10 and filming apparatus shown in Figure 11, use the solid-state imaging device of the plane difference of the borderline region that can reduce effective pixel area and outer peripheral areas.Thereby become can the desensitization inequality filming apparatus.
The present invention can constitute built-in above-mentioned filming apparatus 50,40 and have for example electronic equipments such as pocket telephone of camera function.Even the sensitivity inequality and the high electronic equipment of reliability that can reduce built-in filming apparatus also can be provided in this electronic equipment.
The explanation of symbol
1 solid-state imaging device, 2 imaging pixels
3 imaging regions, 4 vertical drive circuits
5 column signal treatment circuits, 6 horizontal drive circuits
7 output circuit, 8 control circuit
9 vertical signal lines, 10 horizontal signal lines
11 effective pixel area, 12 optical black area
13 outer peripheral areas, 14 peripheral circuit portion
15 non-opening sections, 18 shading films
19 interlayer insulating films, 20 multilayer wired layers
21 21a of opening section, the first opening part
The 21b second opening part 22 landfill layers
24 pseudo-opening sections
Claims (17)
1. a solid-state imaging device is characterized in that, comprising:
Effective pixel area is arranged with a plurality of pixels with photo-electric conversion element;
The outer peripheral areas of described effective pixel area;
Peristome, be formed on photo-electric conversion element in the described effective pixel area directly over insulating barrier in;
Pseudo-peristome is formed in the insulating barrier on top of described outer peripheral areas; And
The landfill layer is used for described peristome of landfill and described pseudo-peristome.
2. solid-state imaging device according to claim 1 is characterized in that,
Described pseudo-peristome is formed in the optical black area and/or peripheral circuit portion with a plurality of pixels of described outer peripheral areas,
Use insulating material as described landfill layer.
3. solid-state imaging device according to claim 1 is characterized in that,
Use refractive index to be higher than the organic material of described insulating barrier as described landfill layer.
4. solid-state imaging device according to claim 1 is characterized in that,
The opening capacity that is arranged on the peristome in the insulating barrier of described effective pixel area and is arranged on the peristome in the insulating barrier of described outer peripheral areas about equally.
5. solid-state imaging device according to claim 1 is characterized in that,
The sidewall of the open side of described peristome is a cone-shaped.
6. solid-state imaging device according to claim 1 is characterized in that,
Being arranged on pseudo-peristome in the insulating barrier of described outer peripheral areas forms and has interference of light effect.
7. the manufacture method of a solid-state imaging device is characterized in that, comprising:
Form the step of insulating barrier in the mode of the outer peripheral areas of crossing over effective pixel area and described effective pixel area, wherein, in described effective pixel area, be arranged with a plurality of pixels with photoelectric conversion part;
Form peristome at the insulating barrier that is arranged in directly over the photoelectric conversion part of described effective pixel area, and in the insulating barrier of described outer peripheral areas, form the step of pseudo-peristome; And
, landfill on described insulating barrier, forms the step of landfill layer for being formed on described peristome in the described insulating barrier and described pseudo-peristome.
8. the manufacture method of solid-state imaging device according to claim 7 is characterized in that,
Described pseudo-peristome is formed in the optical black area and/or peripheral circuit portion with a plurality of pixels of described outer peripheral areas,
Use insulating material as described landfill layer.
9. the manufacture method of solid-state imaging device according to claim 7 is characterized in that,
Use refractive index to be higher than the organic material of described insulating barrier as described landfill layer.
10. the manufacture method of solid-state imaging device according to claim 7 is characterized in that,
Form the opening capacity of the described pseudo-peristome of the described peristome of described effective pixel area and described outer peripheral areas about equally.
11. the manufacture method of solid-state imaging device according to claim 7 is characterized in that,
The sidewall that described peristome is formed open side has cone-shaped.
12. the manufacture method of solid-state imaging device according to claim 7 is characterized in that,
The pseudo-peristome of described outer peripheral areas formed have interference of light effect.
13. the manufacture method of solid-state imaging device according to claim 7 is characterized in that,
By twice opening operation the described peristome of described effective pixel area is carried out opening.
14. the manufacture method of solid-state imaging device according to claim 13 is characterized in that,
The opening portion that forms by the described opening operation first time and the described opening operation second time is different respectively shape.
15. the manufacture method of solid-state imaging device according to claim 13 is characterized in that,
Make open centre based on the described opening operation first time with different, and form and be carried out the described peristome that pupil is proofreaied and correct based on the open centre of the described opening operation second time.
16. a filming apparatus is characterized in that, comprising:
Solid-state imaging device;
Optical system is used for the lead photoelectric conversion part of described solid-state imaging device of incident light; And
Signal processing circuit is used for the output signal of described solid-state imaging device is handled,
Wherein, described solid-state imaging device comprises:
Effective pixel area is arranged with a plurality of pixels with photo-electric conversion element;
The outer peripheral areas of described effective pixel area;
Peristome is formed in the insulating barrier directly over the photo-electric conversion element in the described effective pixel area;
Pseudo-peristome is formed in the insulating barrier on top of described outer peripheral areas; And
The landfill layer is used for described peristome of landfill and described pseudo-peristome.
17. an electronic equipment is characterized in that,
Described electronic equipment is built-in with filming apparatus,
Wherein, described filming apparatus comprises:
Solid-state imaging device;
Optical system is used for the lead photo-electric conversion element of described solid-state imaging device of incident light; And
Signal processing circuit is used for the output signal of described solid-state imaging device is handled,
Described solid-state imaging device comprises:
Effective pixel area is arranged with a plurality of pixels with photo-electric conversion element;
The outer peripheral areas of described effective pixel area;
Peristome, be formed on photo-electric conversion element in the described effective pixel area directly over insulating barrier in;
Pseudo-peristome is formed in the insulating barrier on top of described outer peripheral areas; And
The landfill layer is used for described peristome of landfill and described pseudo-peristome.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2007340331A JP4735643B2 (en) | 2007-12-28 | 2007-12-28 | Solid-state imaging device, camera and electronic device |
| JP2007340331 | 2007-12-28 | ||
| JP2007-340331 | 2007-12-28 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101471369A true CN101471369A (en) | 2009-07-01 |
| CN101471369B CN101471369B (en) | 2013-02-27 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN2008101873230A Expired - Fee Related CN101471369B (en) | 2007-12-28 | 2008-12-26 | Solid-state imaging device, method of manufacturing the same, and camera and electronic apparatus using the same |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US8508010B2 (en) |
| JP (1) | JP4735643B2 (en) |
| KR (1) | KR20090072965A (en) |
| CN (1) | CN101471369B (en) |
| TW (1) | TW200935596A (en) |
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Also Published As
| Publication number | Publication date |
|---|---|
| CN101471369B (en) | 2013-02-27 |
| KR20090072965A (en) | 2009-07-02 |
| JP4735643B2 (en) | 2011-07-27 |
| US20090166783A1 (en) | 2009-07-02 |
| TW200935596A (en) | 2009-08-16 |
| JP2009164247A (en) | 2009-07-23 |
| US8508010B2 (en) | 2013-08-13 |
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