CN101443131B - 集成热单元 - Google Patents
集成热单元 Download PDFInfo
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- CN101443131B CN101443131B CN2005800485660A CN200580048566A CN101443131B CN 101443131 B CN101443131 B CN 101443131B CN 2005800485660 A CN2005800485660 A CN 2005800485660A CN 200580048566 A CN200580048566 A CN 200580048566A CN 101443131 B CN101443131 B CN 101443131B
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- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
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Abstract
一种集成热单元包括:烘烤板,其构造成对支撑在烘烤板的表面上的衬底进行加热;冷却板,其构造成对支撑在冷却板的表面上的衬底进行冷却;和衬底传送梭,其构造成将衬底从烘烤板传送到冷却板,衬底传送梭具有控温衬底保持表面,所述保持表面能够对由烘烤板加热的衬底进行冷却。
Description
技术领域
本发明一般而言涉及衬底处理设备领域。更具体地,本发明涉及用于控制衬底温度的方法和装置,该衬底是诸如半导体衬底,并且在形成集成电路中使用。
背景技术
现代集成电路包含几百万个个体元件,这些元件通过对诸如硅、金属和/或介电层的材料进行图案化而形成,从而将集成电路的尺寸制成微米的几分之一。整个工业中用于形成这种图案的技术是光刻。通常的光刻处理序列一般包括在衬底的表面上沉积一个或者多个均匀的光阻材料(光阻)层、对沉积层进行干燥和固化、通过将光阻层曝光于电磁辐射而对衬底进行图案化,其中电磁辐射适合于改性曝光层,然后对图案化的光阻层进行显影。
在半导体工业中常见的是,与光刻处理有关的许多步骤将要在多室处理系统(例如,组合工具)中执行,其中多室处理系统具有以受控方式依次处理半导体晶片的能力。用来沉积(即,涂覆)和显影光阻材料的组合工具的一个示例通常是指匀胶显影光刻工具(track lithography tool)。
匀胶显影光刻工具通常包括容纳多个室(此处有时称为平台)的主机架,这些室专用于执行与前光刻处理和后光刻处理有关的各种任务。在匀胶显影光刻工具内通常都有湿处理室和干处理室。湿室包括涂覆和/或显影杯,而干室包括容纳烘烤板和/或冷却板的热控制单元。匀胶显影光刻工具还常常包括一个或者多个晶舟/晶盒安装装置(诸如工业标准FOUP(前开式标准舱)),以从清洁室接收衬底或者将衬底返回至清洁室,其还包括多个衬底传送机械手,以将衬底在匀胶显影光刻工具的各种室/平台和允许该工具可操作地连接到光刻曝光工具的接口之间传送,以将衬底传送进入曝光工具和在曝光工具内处理衬底之后从曝光工具接收衬底。
这么多年,在半导体工业内,已经有很强推动力来缩小半导体器件尺寸。构件尺寸的减小导致处理变化性的工业公差减小,随后其导致了半导体制造规格对处理均匀性和可重复性具有更严格的要求。在匀胶显影光刻处理序列过程中,减小处理变化性的重要因素是确保针对特定应用在匀胶显影光刻工具内处理的每个衬底具有相同的“晶片历史”。一般由处理工程师监视和控制衬底的晶片历史,以确保控制所有器件制造处理变量,使得总是以相同的方式处理相同批次中的所有衬底,其中该器件制造处理变量会在后面会影响器件的性能。
为了确保每个衬底具有相同的“晶片历史”,要求每个衬底经历相同的可重复衬底处理步骤(例如,一致的涂覆处理、一致的硬烘烤(hardbake)处理、一致的冷却处理等),并且对于每个衬底,各处理步骤之间的时间要相同。光刻型器件制造处理尤其对处理配方变量和配方步骤之间的时间敏感,这直接影响处理变化性,最终影响器件性能。
鉴于这些要求,半导体工业对能够提高匀胶显影光刻和其它类型的组合工具的晶片历史的一致性的方法和显影设备和技术进行了持续的研究。
发明内容
根据本发明,提供了关于半导体制造设备的方法和装置。更具体地,本发明实施例涉及用于以较高可控的方式对衬底进行加热和/或冷却。本发明实施例设想以较高可控的方式根据相同的加热和冷却序列处理衬底因而有助于针对每个衬底确保一致的晶片历史。尽管本发明一些实施例在匀胶显影光刻工具的室或者平台中对衬底进行加热和/或冷却方面尤其有用,但是本发明的其它实施例能够用在期望以较高可控的方式对衬底进行加热和冷却的其它应用中。
本发明的某些实施例属于集成热单元。根据一个这样的实施例,集成热单元包括烘烤板,其构造成对支撑在烘烤板的表面上的衬底进行加热;冷却板,其构造成对支撑在冷却板的表面上的衬底进行冷却;和衬底传送梭,其构造成将衬底从烘烤板传送到冷却板,衬底传送梭具有控温衬底保持表面,保持表面能够对由烘烤板加热的衬底进行冷却。
根据本发明另一个实施例,集成热单元包括烘烤平台,烘烤平台包括烘烤板,烘烤板构造成保持和加热衬底;冷却平台,冷却平台包括冷却板,冷却板构造成保持和冷却衬底;和衬底传送梭,其构造成将衬底沿着热单元内的水平直线路径从烘烤板传送到冷却板,并且沿着集成热单元内的垂直路径升高和降低衬底。
根据本发明另一个实施例,集成热单元包括烘烤板,烘烤板具有衬底保持表面,其构造成在烘烤的位置保持和加热衬底;冷却板,冷却板具有衬底保持表面,其构造成在冷却的位置保持和冷却衬底;其中,当烘烤板在烘烤位置时,烘烤板的衬底保持表面位于第一基本水平平面,当冷却板在冷却位置时,冷却板的衬底保持表面位于第二基本水平平面,第二基本水平平面在第一平面下方。
根据本发明另一个实施例,提供一种烘烤平台。烘烤平台包括烘烤板,适于对支撑在烘烤板的上表面上衬底进行加热,烘烤板可在上烘烤位置和下冷却位置之间垂直移动;和多个散热器,适于当烘烤板在下冷却位置时,散热器可接合地连接到烘烤板的下表面。
本发明的其它一些实施例涉及匀胶显影光刻工具,其包括多个晶舟组件,适于接收一个或者多个晶盒;和一个或者多个机械手,适于将晶片从一个或者多个晶舟组件传送到匀胶显影光刻工具内的处理模组,其中,处理模组中至少一个包括根据上述实施例中一个的集成热单元。
本发明的其它实施例还涉及在集成热单元处理衬底的方法。根据一个这样的实施例,在具有烘烤板和冷却板的集成热单元中处理衬底的方法包括:将衬底传送进入集成热单元,衬底具有施加在衬底上的液体光阻材料;将衬底定位在烘烤板上;用烘烤板加热衬底;用具有控温表面的梭将衬底从烘烤板传送到冷却板;用冷却板冷却衬底;和将衬底从集成热单元传送出来。
根据另一个实施例,在具有烘烤板和冷却板的集成热单元中处理衬底的方法包括:将衬底传送进入集成热单元,衬底具有施加在衬底上的液体光阻材料;将衬底定位在烘烤板上;用烘烤板加热衬底;将衬底从烘烤板传送到冷却板,其中,传送包括用衬底传送梭在集成热单元内将衬底沿着水平线性路径和沿着垂直路径移动;用冷却板冷却衬底;和将衬底从集成热单元传送出来。
根据另一个实施例,在具有烘烤板和冷却板的集成热单元中处理衬底的方法包括:将衬底传送进入集成热单元,衬底具有施加在衬底上的液体光阻材料;将衬底定位在烘烤板上;用烘烤板加热衬底;用具有控温表面的梭将衬底从烘烤板传送到冷却板;用冷却板冷却衬底;和将衬底从集成热单元传送出来。
根据本发明另一个实施例,提供一种快速降低烘烤板设定点温度的方法。本实施例包括在烘烤板在烘烤位置时使用烘烤板对设置在烘烤板的上表面上的衬底进行加热之后,将烘烤板垂直移动到下侧位置,在下侧位置中,烘烤板的下表面接触多个散热器,散热器适于可接合地连接到烘烤板的下表面。
本发明能够实现优于传统技术的许多好处。例如,在一个集成单元中包括烘烤板和冷却板将关于将烘烤的晶片传送到冷却板的延迟减至最小。另外,包括具有控温衬底保持表面的梭并且该梭将晶片在烘烤板和冷却板之间传送对每个晶片的历史提供了附加程度的控制,因此能够在多个晶片中实现更一致的热历史。而且,本发明实施例通过减小匀胶显影光刻工具的主要中央机械手的负载增加了室的产量,并且在主要中央机械手出现故障的情况下为后烘烤晶片提供了安全之处。其它实施例通过减小将烘烤板的设定点温度从第一温度变至第二温度所需时间量来增大晶片产量,其中第二温度低于第一温度。取决于实施例,可以实现这些好处以及其它好处的一个或者多个。在整个说明书中,尤其是以下结合附图,将更详细描述这些和其它好处。
附图说明
图1是根据本发明的集成热单元的一个实施例的概念视图;
图2A是图1所示的集成热单元的简化立体图;
图2B是图2A所示的集成热单元10的简化立体图,其中卸下了单元的顶部;
图3是图示根据本发明方法的一个实施例执行的操作序列的框图;
图4是图2B所示的烘烤平台12和冷却平台14的剖视图;
图5是根据本发明一个实施例图2B所示的冷却传送装置18的立体图;
图6是图2B所示的集成热单元的一部分的立体图,其中卸下了烘烤平台12和冷却平台14。
图7是根据本发明一个实施例图2B所示的冷却板30的立体图;
图8是根据本发明一个实施例图2B所示的烘烤板20的立体图;
图9是图8所示的烘烤板20的剖视立体图;
图10是图8和图9所示的烘烤板20的剖视图;
图11是图8所示的烘烤平台12的立体仰视图;
图12是图11所示的可接合散热器140的简化剖视图;
图13是根据本发明的集成热单元的可选实施例的概念视图;
图14是根据本发明的一个实施例的匀胶显影光刻工具的一个实施例的平面视图;和
图15是图示由图14中的匀胶显影光刻工具处理的半导体衬底的示例性处理序列的流程图。
具体实施方式
本发明一般而言提供了一种用于以较高可控方式加热和冷却衬底的方法和装置。尽管可以认识到本发明实施例在辅助确保在匀胶显影光刻工具内根据特定热配方加热和冷却的多个衬底中的每个衬底的晶片历史一致方面特别有用,但是本发明的实施例能够用在期望以较高可控方式加热和冷却衬底的其它应用中。
图1是根据本发明的集成热单元10的一个实施例的简化概念视图。集成热单元10包括烘烤平台(bake station)12、冷却平台14和传送平台16,这些平台都在封闭的壳体40内。冷却平台14包括用于根据需要将衬底在烘烤平台和冷却平台之间传送的梭18。烘烤平台12包括烘烤板20、外壳(enclosure)22和冷却基座24。烘烤平台20在晶片装载位置(图1所示)、闭合的加热位置(其中,烘烤板由电动升降机构28向蛤壳式外壳22驱动至蛤壳式外壳22内)和冷却位置(其中,烘烤板接触冷却基座24)之间移动。当例如切换到新的热配方时,冷却基座24可接合地连接到烘烤板,使得烘烤板的设定点温度能够快速地从较高烘烤温度变至较低烘烤温度。
冷却平台14包括冷却板30和微粒屏蔽罩32,当梭18经过冷却平台以将晶片传送进/出烘烤平台12时,微粒屏蔽罩32保护位于冷却板30上的晶片免于受到可能的微粒污染。衬底能够分别通过细长开口传送进/出热单元10,该细长开口可操作地连接到隔板34a和34b。
如图2A所示,图2A是图1所示的集成热单元10的简化立体图,热单元10包括由铝或者其它适合材料制成的外部壳体40。壳体40的高度较长,以允许烘烤平台12、冷却平台14和梭平台16彼此横向相邻,并且允许在以下参照图14所述的匀胶显影光刻工具中多个集成热单元彼此顶部堆叠。在一个特定实施例中,壳体40仅仅20厘米高。
壳体40包括侧部件40a、顶部件40b和底部件40c。前侧部件40a包括两个细长开口41a、41b,这两个细长开口41a、41b允许衬底传送进/出热单元。隔板34a(未示出)可操作地连接到开口41a以关闭和密封开口41a,隔板34b(未示出)可操作地连接到开口41b以关闭和密封开口41b。壳体40的顶部件40b包括冷却剂通道42,当适合的板(未示出)经由螺钉孔44安装到顶部件40b时,该冷却剂通道42允许冷却流体通过该通道进行循环,以控制顶部件40b的温度。类似的冷却剂通道形成在底部件40c的下表面中。
图2A还示出控制烘烤平台12的精确烘烤操作和冷却平台14的精确冷却操作的各种控制电路46a-46d;和轨道48和49,轨道48和49使梭18(在图2A中看不见)沿着热单元的长度方向直线运动,并且在热单元内垂直运动(这将在下面详述)。在一个实施例中,控制电路46a-46b位于平台12和14附近(例如,3英尺内),以能够对每个平台有关的温度调节机构进行更精确和响应控制。
图2B是集成热单元10的简化立体图,图中卸下了顶部件40b和图1所示的微粒屏蔽罩32。在图2B中,可以看见梭18、冷却板30和烘烤平台12的蛤壳式外壳22。还可以看见壳体40的后支撑件90和底部件40c之间的间隙47。间隙47还在图5中可以看见,并且沿着集成热单元10的大部分长度延伸,以允许梭18将晶片在平台12、14和16之间传送(这将在以下详述)。
为了更好了解和理解集成热单元10的整个操作,现在参照图3以及图1和2B。图3是简化框图,示出的操作序列是根据本发明方法的一个实施例由热单元10执行对晶片进行热处理。晶片可以在例如在匀胶显影光刻工具的合适涂覆平台处在晶片上沉积光阻层之后,根据图3所述的程序进行处理。尽管以下集中论述对单元10内的单个晶片进行的处理,但是本领域的一般技术人员将理解,热单元10常常用来同时处理两个晶片。例如,尽管在烘烤板20上对一个晶片进行加热,但是热单元10能够在冷却板30上对另一个晶片进行冷却的处理、或者在另一个晶片完成热处理时将其传送出热单元的处理。
如图3所示,通过将晶片经由晶片传送细长开口41b传送进入热单元10,然后将晶片放在梭平台16处的固定升降销36(图1)上,开始晶片在热单元10中的历史(图3,步骤50)。晶片可以由例如中央机械手传送进入热单元10,该中央机械手在匀胶显影光刻工具(未示出)中用于晶片传送细长开口41a和41b、以及一个或者多个涂覆或者显影平台。通常的晶片传送细长开口41b由隔板34b的关闭,因此步骤50还包括移动隔板34b以打开细长开口41b。在步骤50过程中,梭18处于平台16处的晶片接收位置,在此处,升降销36延伸通过梭18的细长孔19a和19b。在晶片适当地放置在升降销36上之后,机械手臂收回离开热单元,并且冷却梭18上升将晶片抬起离开固定升降销36(图3,步骤51),然后沿着热单元的长度直线移动以将晶片传送到烘烤平台12(图3,步骤52)。到烘烤平台12的路径使梭18越过冷却平台14处的微粒屏蔽罩32。
在烘烤平台12处,晶片置于升降销38上,并且梭18有空处理另一个任务或者返回到梭平台16处的起始位置(图3,步骤53)。当梭返回到起始位置时,烘烤板20由电动升降机构28抬起,由此将晶片拾起使其脱离固定升降销38,然后将晶片带入蛤壳式外壳内的烘烤位置。一旦晶片在蛤壳式外壳内,根据所需的热配方对晶片进行加热或者烘烤(图3,步骤55)。
在完成烘烤步骤55之后,烘烤板20降低到将晶片放到升降销38的晶片接收位置(图3,步骤56)。接着,梭18返回烘烤平台12,然后拾起晶片使其离开升降销38(图3,步骤57),并将晶片带入冷却平台14(图3,步骤58)。到冷却平台14的路径使得梭越过微粒屏蔽罩32到梭平台16,在那里梭18下降然后向冷却平台14移动。一旦在冷却平台14处,升降销37由气动升降装置升高,以升高晶片使其离开梭(图3,步骤59)。梭18然后有空处理另一个任务,或者返回到平台16处的起始位置(图3,步骤60),并且升降销37下降将晶片放在冷却板30上(图3,步骤61)。
然后根据预定热配方在冷却板30上冷却晶片(图3,步骤62)。在完成冷却处理之后,升降销37升高拾起冷却板上的晶片(图3,步骤63),然后通过例如在步骤50将晶片传送进入热单元的相同中央机械手拾起晶片而使晶片通过细长开口41a从集成热单元传送出来(图3,步骤64)。通常,细长开口41a由隔板34a关闭,因此步骤64包括打开隔板34a,以打开细长开口41a。
本发明实施例允许如上所述的处理以较高可控方式和较高可重复方式执行。因此,本发明实施例有助于确保每个晶片的热处理的极高程度的一致性,其中每个晶片在集成热单元10内根据特定热配方处理。如下详述,能够彼此独立使用或者结合使用本发明的许多具体方面以有助于实现可重复的一致的晶片历史。
一个这样的方面是相对于冷却板30布置烘烤板20。具体地,在本发明一些实施例中,烘烤板20位于集成热单元10内的位置比冷却板30的位置要高。因为烘烤板20产生的热量一般上升到热单元10的上部,这样的位置有助于使烘烤平台和冷却平台之间的串热减至最小,否则这样的串热会导致晶片的热处理随着时间经过而产生差异。
该发明方面在图4中示出,图4是示出烘烤板20和冷却板30的集成热单元10的一部分的简化剖视图。如在图4所示,当烘烤板20在蛤壳式外壳22内的烘烤位置71处时,晶片支撑表面70在水平面A上,而冷却板30的晶片支撑表面72在水平面C上,水平面A正好在水平面C上方。在一些实施例中,平面A在平面C上方至少4cm处,在优选实施例中,平面A在平面C上方6cm处。而且,在本发明一些实施例中,即使当烘烤板在晶片接收位置的同时与散热器140(后述)接合时,烘烤板的上表面70在水平面B上,水平面B在冷却板的上表面72(平面C)的上方。在一些实施例中,平面B至少在平面C上方2cm处,在一个特定的实施例中,平面B在平面C上方2.5cm处。另外,在一些实施例中,微粒屏蔽罩32的上表面在平面B中、或者大致接近平面B。
维持烘烤板20和冷却板30位置之间的这样的高度差有助于使两个平台之间的串热减至最小,并且有助于确保自多个晶片之间进行较高程度地受控的可重复热处理。
本发明的有助于确保每个晶片的热处理极高程度的均匀性的另一个方面是梭18的设计。如在图5所示,图5是梭18的简化立体图,梭包括晶片接收区域74,在梭将晶片从一个平台传送到另一个平台时将半导体晶片放在晶片接收区域74上。在一个实施例中,梭18由铝制成,梭的晶片接收区域74和上表面75的其它部分由冷却剂(例如,去离水)积极地冷却,冷却剂通过梭中的冷却剂通道(在图4中示出为通道75)流动。
冷却剂由连接到进口/出口76的管子输送到通道75,入口/出口76连接到梭18的部分79内的歧管(未示出),歧管有助于将流体在整个梭中均匀分配。当梭18沿着集成热单元的长度横向移动时,流体管至少部分地由管支撑机构77的指状物78支撑。积极冷却晶片接收表面74有助于在晶片在热单元10内时一直维持对晶片温度的精确热控制。对梭18进行积极冷却还比如果直到晶片传送到专用的冷却平台才开始进行这样的积极冷却的情况要更早开始晶片冷却处理,这减小了晶片的总热预算。
图5还示出狭槽19a、19b、晶片小型按钮80和小接触面积接近销82,并且狭槽19a、19b允许梭在升降销保持的晶片下方定位和移动。例如,在冷却平台14a中,在冷却步骤63前后,晶片保持在冷却板上方的一组布置成三角形的三个升降销上(见图7,示出了允许升降销延伸通过冷却板30的孔84)。将狭槽19a对准,以允许梭18滑动经过三个升降销中的两个,并且将狭槽19a对准,以允许梭滑动经过第三个升降销。小型按钮80拧入梭18的上表面中的螺纹孔中,并且在该表面上延伸以帮助将晶片在晶片接收区域74内定心。小型按钮80能够由诸如热塑性材料的任何适当柔软材料制成,这样的材料显示了很强的抗疲劳和热稳定性。在一个实施例中,按钮80由公知为PEEK的聚醚醚酮制成。
接近销82在梭18的上表面74上分布,并且由诸如蓝宝石的具有低摩擦系数的材料制成。接近销82允许使由梭18正在运输的晶片很接近控温表面74。晶片和控温表面74之间的小间距有助于在晶片的整个表面区域上形成均匀的冷却,同时使晶片的下侧和梭之间的接触减小至最小,因此减小了由于这样的接触而产生微粒或者污染物的可能性。接近销83的进一步的细节在于2005年4月20日提交的题为“Purged Vacuum ChuckWith Proximity Pins”的U.S.申请No.11/111,155(代理人案卷号No.A9871/T60200)中阐述,该专利文献出于各种目的通过引用的方式包含于此。在一个特定的实施例中,梭18包括四个小型按钮80和十七个接近销82。
梭18还包括细长U形支撑架86,该支撑架86允许梭安装到图6所示的支撑板88,图6是已经卸下烘烤平台12和冷却平台14的集成热单元10的一部分的立体图。如图6所示,支撑板88通过狭槽47环扣在后支撑件90下面和周围,后支撑件90安装到底板40c。板88(和因此的梭18)能够沿着轨道48直线移动(水平路径X)。板88还沿着轨道49垂直滑动,以允许梭18上升和下降(垂直路径Z),以在特定平台处拾起和/或放下晶片。
现在参照图7,图7是根据本发明一个实施例的冷却板30的立体图,冷却板30包括冷却剂入口95和出口96,冷却剂入口95和出口96允许诸如去离水的冷却剂流体通过冷却剂通道(未示出)循环以冷却支撑在晶片支撑表面72上的晶片。冷却板30还包括许多类似于参照图5描述的按钮80和接近销82的晶片小型按钮85和小接触面积的接近销83。在一个特定的实施例中,冷却板30包括八个小型按钮85和十七个接近销83。另外,尽管没有在图7示出,冷却板30可以包括多个真空端口,并且可操作地连接到真空卡盘以在冷却处理过程中将晶片固定到冷却板。
同样在图7中没有示出,微粒屏蔽罩32(图1所示)位于冷却板30的上方,以当梭18在烘烤平台12和传送平台16之间冷却板30上方横向移送时,保护冷却板和在冷却板上的任何晶片不会受到可能的微粒污染。微粒屏蔽罩32连接到烘烤平台12和冷却平台14之间(见图4)的底部壳体件40c,并且连接到壳体40的前侧部件40a,连接的方式是在需要时允许梭18经过微粒屏蔽罩的下方并访问冷却板30。在一个特定实施例中,微粒屏蔽罩32由不锈钢制成。
现在参照图8、图9和图10,图8是根据本发明一个实施例的图2B所示的烘烤平台12的立体图;图9是图8所示的烘烤平台12的剖视立体图,图10是烘烤平台的剖视图。如在图8-图10所示,烘烤平台12具有三个独立的等温加热元件:烘烤板20、顶部加热板110和侧部加热板112,各个板由热导率较高的材料(诸如铝或者其它适合的材料)制成。加热元件(例如,电阻加热元件)嵌在每个板20、110、112内。烘烤平台12还分别包括侧部上、下隔热罩116和118、以及包围烘烤板20和盖子120的底部杯子119(仅仅在图10示出)。隔热罩116、118、杯子119和盖子120各由铝制成。盖子120通过八个螺钉拧入穿过螺纹孔115而安装到顶部加热板110。
烘烤板20可操作地连接到电动升降机构26,使得烘烤板能够上升到蛤壳式外壳22中和下降到晶片接收位置。通常,当晶片上升到图4中位置71所示的烘烤位置时在烘烤板20上受热。当在烘烤位置时,杯子119环绕侧部加热板112的底部部分,以形成蛤壳布置,以辅助将由烘烤板20产生的热限定在由烘烤板和外壳22所形成的内部空腔内。在一个实施例中,烘烤板20的上表面包括与梭18和冷却板30有关描述类似的八个晶片小型按钮和十七个接近销。另外,在一个实施例中,烘烤板20包括多个真空端口,并且可操作地连接到真空卡盘以在烘烤处理过程中将晶片固定到烘烤板。
在烘烤处理过程中,面板122正好位于烘烤板20的晶片支撑面70的上方,并且与其相对。面板122可以由铝以及其它适合材料制成,并且包括多个孔或者通道122a,这些孔或者通道122a允许气体和污染物受到烘烤而离开正在烘烤板20上进行烘烤的晶片表面,以漂过面板122汇入到径向向内的气流124中,气流124形成在面板122和顶部加热板110之间。
来自径向向内的气流124的气体最初由气体入口管线127引入到烘烤平台12的环形气体歧管126,环形气体歧管126环绕顶部加热板110的外部部分。气体歧管126包括多个小气体入口130(在一个实施例中是128个入口),该气体入口130允许气体从歧管126流入顶部加热板110的下表面和面板122的上表面之间的空腔132中。气体径向向内朝着平台的中心流过扩散板134,扩散板134包括多个气体出口孔136。在流过扩散板134之后,气体通过气体出口管线128离开烘烤平台12。
以下将图11和图12进行论述本发明的一个方面,其通过集成热单元10使从一个热配方切换到另一个热配方的任何延迟减至最小,并且因此而辅助确保高的晶片吞吐量。图11是图8-图10示出的烘烤平台12的立体仰视图。如在图11所示,在本发明的一个实施例中,烘烤平台12包括多个可接合的散热器140。每个可接合的散热器140由适合的散热器材料(诸如铝、铜、不锈钢或者其它金属)制成。
如之前所提及,烘烤板20根据特定热配方加热晶片。热配方的一个要素通常是设定点温度,将烘烤板设定在该设定点温度加热晶片。在烘烤处理过程中,例行公事地测量晶片温度,并且可以调节烘烤板的一个或者多个区域以确保对衬底进行均匀的加热。通常,在根据相同的热配方处理大批晶片的同时,将烘烤板加热到所需的设定点温度。因此,例如,如果特定的热配方要求175℃的设定点温度,并且该配方在100个连续的晶片上实施,则在处理100个连续晶片所需时间长度期间,将烘烤板20加热到175℃。然而,如果根据不同热配方要处理随后一批200个晶片,该配方例如要求130℃的设定点温度,则在处理第100个衬底和第101个衬底之间,烘烤板20的设定点温度需要快速地从175℃变化到130℃。
本发明的实施例通过用电动机26将烘烤板下降到更低的冷却位置(该位置在晶片接收位置下方)而使烘烤板20的设定点的温度能够得到快速降低。在冷却位置,烘烤板的底表面接触每个散热器140的上表面。散热器和烘烤板之间可以接触,因为底部杯子119包括多个孔138,该多个孔138对应于多个散热器140,以允许散热器延伸通过底部杯子119接触烘烤板20。
图12是放大的可接合散热器140的简化剖视图。如图12所示,每个可接合散热器140包括下基部144,该下基部144的直径比散热器的主体大。下基部144装配在由底部基板40c和铝板150所限定的空腔152内。散热器的基部144接合底部基板的凸缘154,并且通过铝板150和基部144之间的弹簧145压靠该凸缘。
当烘烤板20下降到冷却位置时,弹簧145使得散热器140压在烘烤板的下表面73上。所有散热器140的组合热质量允许烘烤板20根据需要(例如,当过渡到新的热配方时)从设定点温度快速冷却到更低的设定点温度。
尽管图11和图12所示的散热器140的形状示出为柱形,也能够使用许多其它形状和尺寸。另外,在一些实施例中,通过在散热器主体内形成一个或者多个冷却剂通道而积极地冷却每个散热器140。另外,在一些实施例中,散热器140包括在其上表面142上的热垫(thermal pad),以在接合过程中提供散热器和烘烤板之间的光滑接触。
图13是根据本发明的集成热单元150的另一个实施例的概念性视图。图13中的本发明的实施例和图1中的实施例之间的主要不同分别是烘烤平台12、冷却平台14和梭平台16的放置。在图13中,梭(梭152,可以比作梭18)已经移动到烘烤平台和冷却平台之间的中央位置。这样的布置提供了这样的好处,即进一步降低烘烤平台和冷却平台之间串热,并且还减轻了对将微粒屏蔽罩32定位在冷却板30的上方的需要,这是因为梭18不必“飞过”冷却板以将晶片输送到烘烤板20。图1的布置与图13的布置相比的一个好处是:当梭处于接收传递到集成热单元的晶片的位置时,可以将梭18从烘烤板20分开。
另外,图13中的梭152可操作地构造成沿着X轴线(水平路径)沿着壳体40的长度直线移动,但是不构造成垂直移动。这些不同要求各个烘烤平台、冷却平台和梭平台处的升降销可移动,以正确地在梭152和平台之间交换晶片。
图14是匀胶显影光刻工具200的一个实施例的平面视图,在匀胶显影光刻工具200中可以使用本发明实施例。如在图14所示,匀胶显影光刻工具200包含前端模组210(有时称为工厂接口210)、中央模组212、和后模组214(有时称为扫描机(scanner)接口)。前端模组210一般包含一个或者多个晶舟组件或者FOUPS(例如,标号216A-216D)、前端机械手218和前端处理架(rack)220A、220B。一个或者多个晶舟组件216A-216D一般适于接收一个或者多个晶盒230,晶盒230可以容纳一个或者多个将要在匀胶显影光刻工具200中处理的衬底“W”、或者晶片。
中央模组212一般包含第一中央处理架222A、第二中央处理架222B和中央机械手224。后模组214一般包含第一和第二后处理架226A、226B以及后端机械手228。前端机械手218适于访问前端处理架220A、220B中的处理模组;中央机械手224适于访问前端处理架220A、220B、第一中央处理架222A、第二中央处理架222B和/或后处理架226A、226B中的处理模组;后端机械手228适于访问后处理架226A、226B中的处理模组,并且在一些情况下与步进机/扫描机5交换衬底。
步进机/扫描机5可以从San Jose,CA的Canon USA,Inc.、Belmont,CA的Nikon Precision Inc.或者Tempe Arizona的ASML US,Inc.购买,并且是例如用在集成电路(IC)制造中的光刻投影设备。扫描机/步进机5将沉积在组合工具中衬底上的光敏材料(光阻)暴露到某种形式的电磁辐射,以产生电路图案,该图案对应于将要形成在衬底表面上的集成电路(IC)器件的单个层。
各个处理架220A、220B;222A、222B和226A、226B包含垂直堆叠布置的多个处理模组。即,各个处理架可以包含多个堆叠集成热单元10、多个堆叠涂覆器模组232、共用分配装置234的多个堆叠涂覆器/显影器模组234、或者适于执行匀胶显影光刻工具所需的各种处理步骤的其它模组。作为示例,涂覆器模组232可以沉积底部抗反射涂层(BARC);涂覆器/显影器模组234可以用来沉积和/或显影光阻层,并且集成热单元10可以执行与硬化的BARC和/或光阻层有关的烘烤和冷却操作。
在一个实施例中,系统控制器240用来控制在组合工具200中执行的所有部件和处理。控制器240一般适于与步进机/扫描机5通信、监控在组合工具200中执行的处理的各个方面,并适于控制完成衬底处理序列的所有方面。在一些情况下,控制器240联合其它控制器(诸如控制器46A-46D,其控制集成热单元10的热板20和冷却板30)工作,以控制处理序列的某些方面。控制器240通常是基于微处理器的控制器,并且构造成从使用者和/或在其中一个处理室中的各种传感器接收输入,并且根据各种输入和保持在控制器存储器中的软件指令适当地控制处理室的部件。控制器240一般包含存储器和CPU(未示出),当需要时控制器可以使用存储器和CPU以保持各种程序、处理程序和执行程序。存储器(未示出)连接到CPU,并且可以是容易获得的存储器(诸如随机存储器(RAM)、只读存储器(ROM)、软盘、硬盘或者本地或者远程的任何其它数字存储器)中一个或者多个。软件指令和数据可以编码和储存在存储器中以指令CPU。辅助电路(未示出)还连接到CPU,以传统的方式辅助处理器。辅助电路可以包括高速缓冲存储器、电源、时钟电路、输入/输出电路、子系统和现有技术中所公知的等等。可由控制器240读取的程序(或者计算机指令)判定哪个任务可在处理室中执行。优选地,程序是由控制器240读取的软件,并且包括基于限定的规则和输入数据监控和控制处理的指令。
要理解到,本发明实施例不限于使用如图14所述的匀胶显影光刻工具。相反,本发明实施例可以用在包括许多以下工具构造的任何匀胶显影光刻工具,这些设备构造在于2005年4月22日提交的题为“Cluster ToolArchitecture for Processing a Substrate”的U.S.申请No.11/112,281中描述,该专利文献出于各种目的通过引用的方式而包含于此。该匀胶显影光刻工具也可以包括没有在11,112,281申请中所描述的构造。
图15的流程图图示了用于在匀胶显影光刻工具200内处理的半导体衬底的示例性处理序列。本领域的技术人员将了解到以下参照图15描述的各种处理步骤为将要采用的本发明方法提供了许多不同机会。本领域技术人员将了解到本发明方法的各种实施例不限于图15所阐述的特定处理序列,并且相反能够用在处理步骤的任何序列或者任何应用,只要期望能够显示根据特定处理配方对多个衬底的热处理(和尤其是互补的烘烤和冷却步骤)进行较高程度的控制就可以了。
图15图示了一系列方法步骤300的一个实施例,其可以用来对在衬底表面上形成的光阻材料层进行沉积、曝光和显影。光刻处理一般可以包括以下:将衬底传送到涂覆模组步骤310、底部抗反射涂层(BARC)涂覆步骤312、后BRAC烘烤步骤314、后BARC冷却步骤316、光阻涂覆步骤318、后光阻烘烤步骤320、后光阻冷却步骤322、晶片边缘球状物去除(OEBR)步骤324、曝光步骤326、后曝光烘烤(PEB)步骤328、后曝光烘烤冷却步骤330、显影步骤332、衬底清洗步骤334、后显影冷却步骤336和将衬底传送到晶舟步骤338。在其它实施例中,在不改变本发明基本范围的情况下,方法步骤300的序列可以重新排列、变更,可以移除一个或者多个步骤、可以增加附加步骤或者将两个或者多个步骤合并成一个步骤。
在步骤310,将半导体衬底传送到涂覆模组。参照图14,将衬底传送到涂覆模组310的步骤一般限定为使前端机械手218将衬底从搁在其中一个晶舟组件216中的晶盒230取出的处理。晶盒230包含一个或者多个衬底“W”,并且由使用者或者一些外部装置(未示出)放置在晶舟组件216上,使得衬底能够通过由保持在系统控制器240中的软件控制的使用者限定的衬底处理序列在组合工具200中进行处理。
BARC涂覆步骤310是用来在衬底表面上沉积有机材料的步骤。BARC层通常是有机涂层,该有机涂层先于光阻层施加到衬底上,以吸收光,否则在步进机/扫描机5中执行的曝光步骤326过程中光会从衬底表面发射回到光阻。如果不防止这样的反射,则将在光阻层形成驻波,这使得特征尺寸会取决于光阻层的局部厚度而从一个位置到另一个位置变化。BARC层还可以用来使衬底表面形貌平面化(或者平坦化),这通常出现在完成多个电子器件制造步骤之后。BARC材料填充特征及其周围以形成扁平表面用于施加光阻层,并且减小了光阻厚度的局部变化。
通常使用传统的旋转涂覆(spin-on)的光阻分配处理来执行BARC涂覆步骤310,在该涂覆处理中,在衬底正在旋转的同时将一定量的BARC材料沉积在衬底表面上,这使得BARC材料中的溶剂蒸发,因而使所沉积的BARC材料的材料属性变化。通常控制BARC处理室中的气流和排气流速率以控制溶剂蒸发处理和在衬底表面上形成的层的属性。
后BARC烘烤步骤314是用来确保所有的溶剂从BARC涂覆步骤312中的所沉积的BARC层移除的步骤,并且在一些情况下,促进BARC层粘附到衬底表面。后BARC烘烤步骤314的温度取决于沉积在衬底表面上的BARC材料的类型,但是一般低于约250℃。完成后BARC烘烤步骤314所需时间将取决于后BARC烘烤步骤期间衬底的温度,但是一般低于约60秒。
后BARC冷却步骤316是用来控制和确保衬底温度在周围温度之上的时间一致,使得每个衬底具有相同的时间-温度分布,因而将处理变化性减至最小。BARC处理时间-温度分布是衬底晶片历史的一部分,其变化能够对所沉积的膜层属性产生影响,因而通常控制该变化以将处理变化性减至最小。后BARC冷却步骤316通常用来将后BARC烘烤步骤314之后的衬底冷却到周围温度或者周围温度左右。完成后BARC冷却步骤316所需时间将取决于离开后BARC烘烤步骤的衬底温度,但是一般低于30秒。
光阻涂覆步骤318是用来在衬底表面上沉积光阻层的步骤。在光阻涂覆步骤318期间所沉积的光阻层通常是施加到衬底上的光敏有机涂层,并且在后面在步进机/扫描机5中曝光以在衬底表面上形成图案化构件。通常使用传统的旋转涂覆光阻分配处理执行光阻涂覆步骤318,在该光阻分配处理中,在衬底正在旋转的同时将一定量的光阻材料沉积在衬底表面上,这使得光阻材料中的溶剂蒸发,因而使所沉积的光阻层中的材料属性发生变化。控制光阻处理室中的气流和排出气流速率以控制溶剂蒸发处理和在衬底表面上形成的层属性。在一些情况下,需要通过控制排气流速率和/或通过在衬底表面附近喷射溶剂,控制在衬底表面上的溶剂的压力以在光阻涂覆步骤期间控制溶剂从光阻中蒸发。参照图14,在示例性光阻涂覆处理中,衬底首先定位在涂覆器/显影器模组234中的晶片卡盘上。在光阻分配到衬底中心的同时,电动机转动晶片卡盘和衬底。该转动将角扭矩(angular torque)传递到光阻,迫使光阻径向向外流动,最终覆盖衬底。
光阻烘烤步骤320是用来确保所有溶剂从在光阻涂覆步骤318中所沉积光阻层移除的步骤,并且在一些情况下促进光阻层粘附到BARC层。后光阻烘烤步骤320的温度依赖于沉积在衬底表面上的光阻材料的类型,但是一般低于约350℃。完成后光阻烘烤步骤320所需时间取决于在后光阻烘烤步骤期间衬底的温度,但是一般低于约60秒。
后光阻冷却步骤322是用来控制衬底温度在周围温度之上的时间,使得每个衬底具有相同的时间-温度分布,因而将处理变化性减至最小。时间-温度分布的变化性能够对所沉积膜层属性产生影响,因而通常受到控制以将处理变化性减至最小。后光阻冷却步骤322的温度因而用来将后光阻烘烤步骤320之后的衬底冷却到周围温度或者周围温度左右。完成后光阻冷却步骤322所需时间取决于离开后光阻烘烤步骤时衬底的温度,但是一般低于30秒。
晶片边缘球状物去除(OEBR)步骤324是这样的处理,该处理用来将所沉积的光敏光阻层(诸如,在光阻涂覆步骤318期间形成的层和在BARC涂覆步骤312期间形成的BARC层)曝光到辐射源(未示出),使得能够从衬底边缘去除一个或者两个层,并且能够更一致地控制所沉积层的边缘突出物去除。用来对衬底表面进行曝光的辐射的波长和强度取决于沉积在衬底表面上的BARC和光阻层的类型。OEBR工具能够例如从Cypress,CA的USHIO America,Inc.购买。
曝光步骤326是由光刻投影装置(例如,步进机扫描机5)施加的光刻投影步骤,以形成用来制造集成电路(IC)的图案。通过将光敏材料(诸如,在光阻涂覆步骤318期间形成的光阻层和在BARC涂覆步骤312期间形成的BARC层)曝光到某种形式的电磁辐射,曝光步骤326形成对应于衬底表面上集成电路(IC)器件的单个层的电路图案。
后曝光烘烤(PEB)步骤328是用来紧接在曝光步骤326之后加热衬底,以刺激感光化合物的扩散和减小光阻层中驻波的影响。对于化学增大光阻,PEB步骤还引起催化化学反应,该反应改变了光阻的可溶性。在PEB期间温度的控制通常对临界尺寸(CD)控制是关键的。PEB步骤328的温度取决于沉积在衬底表面上的光阻材料的类型,但是一般低于约250℃。完成PEB步骤328所需时间取决于在PEB步骤期间衬底的温度,但是一般低于60秒。
后曝光烘烤(PEB)冷却步骤330是用来控制确保衬底温度在周围温度之上的时间受到控制,使得每个衬底具有相同时间-温度分布,因而将处理变化性减至最小。PEB处理时间-温度分布的变化能够对所沉积膜层的属性产生影响,因而通常受到控制,以将处理变化性减至最小。PEB冷却步骤330的温度因而用来将PEB步骤328之后的衬底冷却到周围环境温度或者周围环境温度左右。完成PEB冷却步骤330所需时间取决于离开PEB步骤的衬底温度,但是一般低于约30秒。
显影步骤332是这样的处理,即在该处理中使用溶剂来使曝光或者未曝光的光阻和BARC层发生化学或者物理变化,以对在曝光处理步骤326期间形成的图案进行曝光。显影处理可以是用来分配显影器的溶剂的喷涂或浸入或者搅拌(puddle)型处理。在一些显影处理中,在显影处理期间施加显影剂溶液和旋转之前,衬底涂覆有流体层(通常是去离水)。随后施加显影剂溶液,使得显影剂在衬底表面上均匀的涂覆。在步骤334中,向衬底表面提供清洗溶液以结束显影处理。仅仅以示例的方式,清洗溶液可以是去离水。在可选的实施例中,提供去离水结合表面活性剂的清洗溶液。本领域的技术人员将了解到许多变化、修改和替换。
在步骤336,衬底在显影和清洗步骤332和334之后受到冷却。在步骤338中,衬底传送到晶舟,因此完成了处理序列。在步骤338中将衬底传送到晶舟一般需要使前端机械手218将衬底送回位于其中一个晶舟组件216中的晶盒230的处理。
基于此处本发明的描述,本领域技术人员将理解到除了图15没有描述的步骤以外,在后BARC烘烤步骤314和后BARC冷却步骤316期间、在后PR烘烤步骤320和后PR冷却步骤322期间、在后曝光烘烤步骤328和后曝光冷却步骤330期间以及在后显影冷却步骤336期间,本发明实施例对衬底进行加热/或冷却是有好处的。本领域技术人员可以理解,上述设定的各种烘烤和冷去序列中某些可以具有不同的烘烤和冷却要求。本领域技术人员将理解到,结合到集成热单元的特定烘烤板20和/或冷却板30的功能规格将分别取决于烘烤板和/或冷却板欲加热和冷却的材料。例如,BARC材料可以适合地用低温低精度烘烤板(例如,最高250℃的一个区域的加热器)加热,而光阻材料可以要求高温中等精度烘烤板(例如,最高350℃的三个区域的加热器),并且后曝光烘烤板处理可以要求低温高精度烘烤板(例如,最高250℃、十五个区域加热器)。因此,本发明实施例不限于任何特定的烘烤板20或者冷却板30的类型或者构造。相反,一般而言,烘烤板20和冷却板30的每个根据由本领域技术人员确定的使用烘烤板和冷却板的应用需要设计成特定性能标准。
尽管已经参照特定实施例和其具体示例描述了本发明,但是应该理解到其它实施例可以落入本发明精神和范围内。因而,本发明的范围参照权利要求和等同物的全部范围确定。
Claims (24)
1.一种集成热单元,用于处理衬底,所述集成热单元包括:
烘烤板,构造成对支撑在所述烘烤板的表面上的衬底进行加热;
冷却板,构造成对支撑在所述冷却板的表面上的衬底进行冷却;
衬底传送梭,构造成将衬底从所述烘烤板传送到所述冷却板,所述衬底传送梭具有控温衬底保持表面,所述保持表面能够对由所述烘烤板加热的衬底进行冷却;和
梭平台,所述梭平台构造成与所述烘烤板和所述冷却板分开,所述梭平台是所述衬底传送梭的起始位置,并且在所述梭平台上,衬底能够传送进入所述热单元,并且由所述衬底传送梭拾起。
2.根据权利要求1所述的集成热单元,还包括壳体,所述烘烤板、所述冷却板和所述梭平台封闭在所述壳体内。
3.根据权利要求2所述的集成热单元,其中,所述烘烤板、所述冷却板和所述梭平台沿着所述壳体的长度方向线性布置。
4.根据权利要求3所述的集成热单元,其中,所述梭平台位于所述烘烤板和所述冷却板之间。
5.根据权利要求3所述的集成热单元,其中,所述冷却板位于所述烘烤板和所述梭平台之间。
6.根据权利要求5所述的集成热单元,还包括微粒屏蔽罩,所述微粒屏蔽罩位于所述冷却板的上方,并且其中所述衬底传送梭在所述壳体内的所述梭平台、所述冷却板和所述烘烤板之间沿着所述微粒屏蔽罩上方的线性路径移动。
7.根据权利要求3所述的集成热单元,其中,所述衬底传送梭构造成从所述壳体长度的一端沿着线性路径移动到另一端。
8.根据权利要求1所述的集成热单元,其中,所述衬底传送梭包括在衬底接收表面下方的多个冷却剂通道。
9.根据权利要求8所述的集成热单元,其中,所述衬底传送梭还包括第一细长狭槽和第二细长狭槽,其中,所述第一细长狭槽和第二细长狭槽穿过所述梭的厚度,并且在所述梭的一端开口,但是没有穿过所述梭的整个长度。
10.根据权利要求9所述的集成热单元,其中,所述衬底传送梭还包括多个小接触面积接近销,所述接近销构造成将衬底略微保持在所述控温表面上方。
11.根据权利要求10所述的集成热单元,其中,所述衬底传送销还包括多个按钮,所述多个按钮围绕所述控温表面的衬底接收区域部分的周边布置,所述多个按钮构造成将衬底固定在所述控温表面的所述衬底接收区域内。
12.一种在具有烘烤板和冷却板的集成热单元中处理衬底的方法,所述处理衬底的方法包括:
将衬底传送进入所述集成热单元,所述衬底具有施加在所述衬底上的液体光阻材料;
将所述衬底定位在所述烘烤板上;
用所述烘烤板加热所述衬底;
用具有控温表面的梭将所述衬底从所述烘烤板传送到所述冷却板;
用所述冷却板冷却所述衬底;和
将所述衬底从所述集成热单元传送出来;
其中,所述将衬底传送进入所述集成热单元包括:将所述衬底置于位于梭平台中的多个升降销上,所述升降销延伸通过所述梭的衬底接收表面,其中所述梭平台构造成与所述烘烤板和所述冷却板分开,并且所述梭平台是所述梭的起始位置。
13.根据权利要求12所述的处理衬底的方法,其中,所述将所述衬底定位在所述烘烤板上包括:
用所述梭将所述衬底传送到烘烤平台;
将所述衬底置于延伸通过所述烘烤板的衬底接收表面的多个升降销上;以及
将所述烘烤板升高以从所述升降销上将所述衬底拾起来。
14.根据权利要求12所述的处理衬底的方法,其中,所述将所述衬底从所述烘烤板传送到所述冷却板包括:
将所述衬底置于延伸通过所述烘烤板的多个升降销上;
用所述梭将所述衬底拾起来;
将所述衬底置于延伸通过所述冷却板的上表面的多个升降销上;以及
将所述升降销降低到所述冷却板以将所述衬底放下到所述冷却板上。
15.根据权利要求14所述的处理衬底的方法,其中,所述将所述衬底从所述烘烤板传送到所述冷却板还包括:
使所述梭经过微粒屏蔽罩上方;然后
使所述梭经过所述微粒屏蔽罩下方,所述微粒屏蔽罩位于所述冷却板上方。
16.根据权利要求12所述的处理衬底的方法,其中,所述梭位于梭平台处,所述烘烤板位于烘烤平台处,并且所述冷却板位于冷却平台处,所述集成热单元包括壳体,所述烘烤平台、所述冷却平台和所述梭平台包含在所述壳体内。
17.根据权利要求16所述的处理衬底的方法,其中,所述烘烤平台、所述冷却平台和所述梭平台沿着所述壳体的长度方向线性布置。
18.根据权利要求17所述的处理衬底的方法,其中,所述梭平台位于所述烘烤板和所述冷却板之间。
19.根据权利要求17所述的处理衬底的方法,其中,所述冷却板位于所述烘烤板和所述梭平台之间。
20.一种集成热单元,用于处理衬底,所述集成热单元包括:
壳体,具有第一访问开口和第二访问开口,所述第一和第二访问开口的每个的尺寸为允许将半导体衬底传送进出所述壳体;
第一访问隔板,可操作地构造成在打开位置和关闭位置之间移动,所述打开位置允许衬底传送通过所述第一访问开口,所述关闭位置阻止衬底传送通过所述第一访问开口;
第二访问隔板,可操作地构造成在打开位置和关闭位置之间移动,所述打开位置允许衬底传送通过所述第二访问开口,所述关闭位置阻止衬底传送通过所述第二访问开口;
烘烤平台,位于所述壳体内,所述烘烤平台包括烘烤板,所述烘烤板构造成对支撑在所述烘烤板的表面上的衬底进行加热;
冷却平台,位于所述壳体内,所述冷却平台包括冷却板,所述冷却板构造成对支撑在所述冷却板的表面上的衬底进行冷却;
梭平台,位于所述壳体内与所述烘烤平台和所述冷却平台不同的位置,所述梭平台适于允许衬底传送梭拾起通过第一访问开口传送进入所述热单元的衬底,所述梭平台是所述衬底传送梭的起始位置,其中,所述衬底传送梭构造成在将衬底从所述烘烤板传送到所述冷却板的同时积极对所述衬底进行冷却。
21.根据权利要求20所述的集成热单元,其中,所述壳体形成大致矩形的外壳,并且所述烘烤平台、所述冷却平台和所述梭平台沿着所述外壳的长度方向线性布置。
22.根据权利要求21所述的集成热单元,其中,所述梭平台位于所述烘烤平台和所述冷却平台之间。
23.根据权利要求21所述的集成热单元,其中,所述冷却平台位于所述烘烤平台和所述梭平台之间。
24.一种匀胶显影光刻工具,包括:
多个晶舟组件,适于接收一个或者多个晶盒;
一个或者多个机械手,适于将晶片从所述一个或者多个晶舟组件传送到所述匀胶显影光刻工具内的处理模组,其中,所述处理模组中至少一个包括集成热单元,所述集成热单元包括:
烘烤板,构造成对支撑在所述烘烤板的表面上的衬底进行加热;
冷却板,构造成对支撑在所述冷却板的表面上的衬底进行冷却;
衬底传送梭,构造成将衬底从所述烘烤板传送到所述冷却板,所述衬底传送梭具有控温衬底保持表面,所述保持表面能够对由所述烘烤板加热的衬底进行冷却;和
梭平台,所述梭平台构造成与所述烘烤板和所述冷却板分开,所述梭平台是所述衬底传送梭的起始位置,并且在所述梭平台上,衬底能够传送进入所述热单元,并且由所述衬底传送梭拾起。
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