CN101416568A - 部件接合方法和部件接合结构 - Google Patents

部件接合方法和部件接合结构 Download PDF

Info

Publication number
CN101416568A
CN101416568A CNA2007800052057A CN200780005205A CN101416568A CN 101416568 A CN101416568 A CN 101416568A CN A2007800052057 A CNA2007800052057 A CN A2007800052057A CN 200780005205 A CN200780005205 A CN 200780005205A CN 101416568 A CN101416568 A CN 101416568A
Authority
CN
China
Prior art keywords
terminal
parts
semiconductor particles
thermosetting resin
soldering paste
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CNA2007800052057A
Other languages
English (en)
Other versions
CN101416568B (zh
Inventor
境忠彦
永福秀喜
和田义之
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Publication of CN101416568A publication Critical patent/CN101416568A/zh
Application granted granted Critical
Publication of CN101416568B publication Critical patent/CN101416568B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
    • H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
    • H05K3/321—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by conductive adhesives
    • H05K3/323—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by conductive adhesives by applying an anisotropic conductive adhesive layer over an array of pads
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
    • B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
    • B23K35/24—Selection of soldering or welding materials proper
    • B23K35/26—Selection of soldering or welding materials proper with the principal constituent melting at less than 400 degrees C
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
    • B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
    • B23K35/24—Selection of soldering or welding materials proper
    • B23K35/26—Selection of soldering or welding materials proper with the principal constituent melting at less than 400 degrees C
    • B23K35/262—Sn as the principal constituent
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
    • B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
    • B23K35/36—Selection of non-metallic compositions, e.g. coatings, fluxes; Selection of soldering or welding materials, conjoint with selection of non-metallic compositions, both selections being of interest
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
    • B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
    • B23K35/36—Selection of non-metallic compositions, e.g. coatings, fluxes; Selection of soldering or welding materials, conjoint with selection of non-metallic compositions, both selections being of interest
    • B23K35/3612—Selection of non-metallic compositions, e.g. coatings, fluxes; Selection of soldering or welding materials, conjoint with selection of non-metallic compositions, both selections being of interest with organic compounds as principal constituents
    • B23K35/3613—Polymers, e.g. resins
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
    • B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
    • B23K35/36—Selection of non-metallic compositions, e.g. coatings, fluxes; Selection of soldering or welding materials, conjoint with selection of non-metallic compositions, both selections being of interest
    • B23K35/362—Selection of compositions of fluxes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/27—Manufacturing methods
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
    • H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
    • H05K3/34—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by soldering
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
    • H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
    • H05K3/34—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by soldering
    • H05K3/3457—Solder materials or compositions; Methods of application thereof
    • H05K3/3485—Applying solder paste, slurry or powder
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/291—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29101—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of less than 400°C
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/291—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29101—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of less than 400°C
    • H01L2224/29109—Indium [In] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/291—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29101—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of less than 400°C
    • H01L2224/29111—Tin [Sn] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/2919—Material with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29199—Material of the matrix
    • H01L2224/2929—Material of the matrix with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298—Fillers
    • H01L2224/29299—Base material
    • H01L2224/293—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298—Fillers
    • H01L2224/29299—Base material
    • H01L2224/293—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29301—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of less than 400°C
    • H01L2224/29311—Tin [Sn] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/75—Apparatus for connecting with bump connectors or layer connectors
    • H01L2224/7525—Means for applying energy, e.g. heating means
    • H01L2224/75252—Means for applying energy, e.g. heating means in the upper part of the bonding apparatus, e.g. in the bonding head
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/8319—Arrangement of the layer connectors prior to mounting
    • H01L2224/83192—Arrangement of the layer connectors prior to mounting wherein the layer connectors are disposed only on another item or body to be connected to the semiconductor or solid-state body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/832—Applying energy for connecting
    • H01L2224/83201—Compression bonding
    • H01L2224/83203—Thermocompression bonding, e.g. diffusion bonding, pressure joining, thermocompression welding or solid-state welding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/838—Bonding techniques
    • H01L2224/83801—Soldering or alloying
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/838—Bonding techniques
    • H01L2224/8385—Bonding techniques using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester
    • H01L2224/83851—Bonding techniques using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester being an anisotropic conductive adhesive
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01004—Beryllium [Be]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01005—Boron [B]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01006—Carbon [C]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01013—Aluminum [Al]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01015—Phosphorus [P]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/0102—Calcium [Ca]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01029—Copper [Cu]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/0103—Zinc [Zn]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01033—Arsenic [As]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01047—Silver [Ag]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/0105—Tin [Sn]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01051—Antimony [Sb]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01078—Platinum [Pt]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01079—Gold [Au]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01082—Lead [Pb]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
    • H01L2924/0132—Binary Alloys
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
    • H01L2924/0133—Ternary Alloys
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
    • H01L2924/0134—Quaternary Alloys
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
    • H01L2924/014—Solder alloys
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/06—Polymers
    • H01L2924/0665—Epoxy resin
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/06—Polymers
    • H01L2924/078—Adhesive characteristics other than chemical
    • H01L2924/0781—Adhesive characteristics other than chemical being an ohmic electrical conductor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/06—Polymers
    • H01L2924/078—Adhesive characteristics other than chemical
    • H01L2924/0781—Adhesive characteristics other than chemical being an ohmic electrical conductor
    • H01L2924/07811—Extrinsic, i.e. with electrical conductive fillers
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/10—Details of components or other objects attached to or integrated in a printed circuit board
    • H05K2201/10613—Details of electrical connections of non-printed components, e.g. special leads
    • H05K2201/10954—Other details of electrical connections
    • H05K2201/10977—Encapsulated connections
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
    • H05K2203/02—Details related to mechanical or acoustic processing, e.g. drilling, punching, cutting, using ultrasound
    • H05K2203/0278—Flat pressure, e.g. for connecting terminals with anisotropic conductive adhesive
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
    • H05K2203/03—Metal processing
    • H05K2203/0315—Oxidising metal
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
    • H05K2203/04—Soldering or other types of metallurgic bonding
    • H05K2203/0425—Solder powder or solder coated metal powder
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
    • H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
    • H05K3/34—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by soldering
    • H05K3/341—Surface mounted components
    • H05K3/3431—Leadless components
    • H05K3/3436—Leadless components having an array of bottom contacts, e.g. pad grid array or ball grid array components

Abstract

旨在提供一种部件接合方法和部件接合结构，其可以实现部件接合同时高可靠性地保证低电阻导通。在这样的构造中，其中通过使用在热固性树脂(3a)内包含焊料粒子(5)的焊膏(3)，通过热固性树脂(3a)接合刚性基板(1)和挠性基板(7)，通过焊料粒子(5)使第一端子(2)和第二端子(8)电连接，焊膏中热固性树脂(3a)的活性剂的混合比例被恰当地设置，且氧化物膜除去部分(2b、8b和5b)部分地形成于第一端子(2)、第二端子(8)和焊料粒子(5)的氧化物膜(2a、8a和5a)中。由此，通过氧化物膜除去部分(2b和8b)将焊料粒子(5)焊料接合到第一端子(2)和第二端子(8)二者，第一端子(2)和第二端子(8)被电学导通，且同时热固性树脂(3a)内焊料粒子(5)相互熔合被避免，可以高可靠性地保证低电阻的部件连接。

Description

部件接合方法和部件接合结构
技术领域
本发明涉及部件接合方法和部件接合结构，通过使用焊膏将包含表面覆盖有自然氧化物膜的端子的部件相互接合。
背景技术
在电子装置领域，作为将部件相互接合的方法，传统上使用在树脂粘合剂内包含导电粒子的各向异性导电剂，该导电粒子是由金或者表面覆盖有金的球制成。这种方法优点在于，在各向异性导电剂供给到连接部以将导电粒子夹置于待连接端子之间的状态下，通过热压接合(thermal compressionbonding)连接部而同时实现端子之间相互导电以及部件之间相互接合。使用各向异性导电剂的部件接合具有上述优点，不过存在例如高材料成本的成本问题以及由于通过导电粒子之间接触而实现的端子之间导电所引起的导电稳定性问题，且这种部件接合不适用于需要低电阻和高可靠性的用途。为了解决这些问题，在树脂粘合剂中包含焊料粒子而不是传统的导电粒子的树脂粘合剂已被提出(例如，见专利文献1)。
[专利文献1]特开平11-4064号公报
发明内容
然而，在上述的专利文献例子中，取决于待接合的电极和凸点的状态，几乎无法保证稳定的焊料接合。也就是说，电极和凸点的表面并不总是干净的，且在许多情形中，焊料粒子的表面一般被氧化物膜覆盖。因此，即使这些焊料粒子夹置于电极和凸点之间且随后热压接合被执行，焊料粒子暂时熔化，然而以低的电阻来电学导通电极和凸点的焊料结合部无法稳定地形成。
为了改善这种接合失效，当焊剂(flux)成份混合在树脂粘合剂内用于除去位于接合部分的氧化物膜时，电极和凸点之间的焊料接合性能改善，然而下述问题的可能性增大。也就是说，焊剂成份作用于粘合剂内的所有焊料粒子，使得当剩余的焊料粒子熔化时，这些熔化的焊料粒子相互熔合并流动，并容易导致电极之间的桥接。这种趋势变得显著，特别是当电极之间的节距狭窄的精细节距部件被接合时。因此，传统上难以实现部件接合同时高可靠性地保证低电阻导通。
因此，本发明的目的是提供一种部件接合方法和部件接合结构，其可以实现部件接合同时高可靠性地保证低电阻导通。
本发明的部件接合方法是用于使第一端子和第二端子相互电连接并使第一部件和第二部件相互接合，该第一端子和第二端子分别设置于第一部件和第二部件上且至少任一表面覆盖有自然氧化物膜，该部件接合方法包括如下步骤：将焊膏夹置于该第一部件和第二部件之间，该焊膏包含位于热固性树脂内主要由锡组成的焊料粒子；以及在加热该第一部件和/或第二部件的同时将该第一端子和第二端子彼此压着而通过该焊料粒子使该第一端子和第二端子电连接，并通过固化该热固性树脂而使该第一部件和第二部件相互接合，其中该焊膏包含作为用于固化该热固性树脂的固化剂的酸酐，且还包含活性剂，该活性剂除去该自然氧化物膜和该焊料粒子的氧化物膜，该活性剂与排除该焊料粒子的剩余部分的比例不超过重量的1％。
本发明的部件接合方法是用于使第一端子和第二端子相互电连接并使第一部件和第二部件相互接合，该第一端子和第二端子分别设置于第一部件和第二部件上且至少任一表面覆盖有自然氧化物膜，该部件接合方法包括如下步骤：将焊膏夹置于该第一部件和第二部件之间，该焊膏包含位于热固性树脂内主要由锡组成的焊料粒子；以及在加热该第一部件和/或第二部件的同时将该第一端子和第二端子彼此压着而通过该焊料粒子电连接该第一端子和第二端子，并通过热固化该热固性树脂而相互接合该第一部件和第二部件，其中该焊膏包含用于固化该热固性树脂的潜性固化剂，且还包含活性剂，该活性剂除去该自然氧化物膜和该焊料粒子的氧化物膜，该活性剂与排除该焊料粒子的剩余部分的比例为重量的1％～5％。
本发明的部件接合结构是通过将焊膏夹置于第一部件和第二部件之间，加热该第一部件和/或第二部件，并将第一端子和第二端子彼此压着而形成，该焊膏包含位于热固性树脂内主要由锡组成的焊料粒子，该第一端子和第二端子分别设置于该第一部件和第二部件上且至少任一表面覆盖有自然氧化物膜，该部件接合结构包括：焊料部分，该焊料部分是通过将该焊料粒子熔化并焊料接合到该第一端子和第二端子二者而形成，该焊料部分使该第一端子和第二端子相互电连接；以及树脂部分，该树脂部分是通过固化该热固性树脂而形成，使该第一部件和第二部件相互接合，并包括在该焊料粒子不相互熔合的状态下对该焊料部分的形成没有贡献的焊料粒子。
根据本发明，通过使用在热固性树脂内包含焊料粒子的焊膏，利用焊料来电连接分别设置于第一部件和第二部件上的第一端子和第二端子，并通过固化热固性树脂而相互接合第一部件和第二部件，其中通过恰当地设置焊膏中热固性树脂的固化剂以及活性剂的混合比例，端子可以通过焊料接合而稳定地电学导通，且热固性树脂内焊料粒子的熔合被避免，由此可以高可靠性地保证低电阻的出色导通。
附图说明
图1(a)至1(c)为本发明实施例的部件接合方法的工艺解释图；
图2(a)至2(c)为本发明实施例的部件接合方法的工艺解释图；
图3(a)和3(b)为本发明实施例的部件接合方法的工艺解释图；以及
图4(a)和4(b)为本发明实施例的部件接合结构的断面图。
具体实施方式
接着，参考图示描述本发明的实施例。首先，参考图1(a)至1(c)和图2(a)至2(c)描述部件接合方法。该部件接合方法是用于将作为第二部件的挠性基板接合到作为第一部件的刚性基板，且根据该方法，使设置于各自基板上的第一端子和第二端子相互电连接并使该刚性基板和挠性基板相互接合。
如图1(a)所示，在刚性基板上形成第一端子2。第一端子2是由铜(Cu)或铜基合金制成，且第一端子2的表面覆盖有通过暴露于空气而产生的氧化物膜2a(自然氧化物膜)。当接合部件时，在刚性基板1上，在其上形成第一端子2的连接面侧上，如图1(b)所示，焊膏3通过配给器4施加并涂敷在第一端子2上。
如图1(c)所示，焊膏3包含热固性树脂3a中预定含量比例(下文中，重量的30％～75％)的焊料粒子5，且包含作为用于热固化热固性树脂3a的固化剂的酸酐或者潜性固化剂(latent curing agent)。这里可使用的酸酐包括甲基六氢邻苯二甲酸酐(methylhexahydrophthalic anhydride)，且另外，例如纳迪克酸酐、甲基四氢苯酐(methyltetrahydrophthalic anhydride)的液体酸酐，以及例如邻苯二甲酸酐(phthalic anhydride)和四氢邻苯二甲酸的固态酸酐。可以使用的潜性固化剂包括咪唑基、酰肼基、三氟化硼胺配合物、胺-亚胺(amineimide)、聚胺盐、胺加合物、双氰胺等。
对于该热固性树脂，环氧树脂是最合适的，然而也可以使用压克力树脂、酚醛树脂(phenol resin)、聚氨酯树脂或者硅酮树脂。本发明中可以使用的环氧树脂没有具体限制，且可以使用已知的环氧树脂。例如，在一个分子中具有两个以上环氧基团的环氧树脂，例如线型酚醛(phenol novolac)型环氧树脂、甲酚醛(cresol novolac)型环氧树脂、双酚A环氧树脂、双酚F环氧树脂、缩水甘油胺(glycidylamine)型环氧树脂、环脂族(cycloaliphatic)环氧树脂、卤代(halogenated)环氧树脂是优选的，且这些环氧树脂的至少一种被选择和使用。
焊料粒子5是通过将主要由锡(Sn)组成的焊料形成为具有预定粒径而得到，且这里，通过假定一般接合对象具有0.1mm以上的端子之间节距，使用形成为粒径为10～30μm的粒子的Sn-Ag-Cu基焊料。当端子间的窄节距窄于0.1mm的部件被接合时，可以使用粒径为1～15μm的焊料粒子从而防止电学短路。
除了Sn-Ag-Cu基焊料之外，也可以使用Sn、Sn-Ag基、Sn-Pb基、Sn-Pb-Ag基、Sn-Bi基、Sn-Bi-Ag基、Sn-Bi-In基、Sn-Cu基、Sn-Ag-Cu-Sb基、Sn-Ag-In-Bi基、Sn-Zn基、Sn-Zn-Bi基以及Sn-in基焊料。对于固化剂，在比用于焊料粒子5的焊料的熔点温度(220℃)高的固化温度(例如230℃)热固化热固性树脂3a，这样的固化剂是期望的。
焊料粒子5的表面覆盖有在制作之后由于暴露于空气而产生的氧化物膜5a，且为了在这种状态下将焊料粒子5焊料接合到覆盖有氧化物膜2a的第一端子2，焊膏3与活性剂6混合，其中活性剂6具有除去氧化物膜2a和氧化物膜5a的作用。在本实施例中，对于活性剂6，N(2-羟乙基)亚氨基二乙酸、间羟基苯甲酸、甲基延胡索酸，且此外，例如邻羟基苯甲酸、松萝酸、3，4-二羟基苯甲酸、间羟基苯甲酸、马尿酸、琥珀酸、邻甲氧基肉桂酸、对茴香酸、石胆酸以及苹果酸被使用，并按照与排除焊料粒子5的剩余部分的比例不超过重量的1％来混合。
在焊膏3中可包含无机填充剂来降低线性膨胀系数。这种情况下，形成为粒子的下述材料按照与排除焊料粒子5的剩余部分的比例为重量的20％～60％来混合。可使用的无机填充剂为结晶硅土、熔融硅土、合成硅土、铝土、氢氧化铝、玻璃纤维、滑石、碳酸钙、钛白、粘土和石棉等，且特别地，结晶硅土、熔融硅土、合成硅土、铝土和氢氧化铝是优选的。
随后，如图2(a)所示，挠性基板7安装在涂敷有焊膏3的刚性基板1上。在挠性基板7的下表面上，形成由与第一端子2相同的材料制成的第二端子8，且第二端子8与第一端子2类似地覆盖有氧化物膜8a(自然氧化物膜)。当安装挠性基板7时，置于基板支持平台11上的刚性基板1的第二端子8的位置与由压着接合工具10保持的挠性基板7的第一端子2的位置匹配，且如图2(b)所示，压着接合工具10下降以将第二端子8和第一端子2相互压着。
此时，在刚性基板1的上表面和挠性基板7的下表面之间夹置有焊膏3，且在第二端子8和第一端子2之间存在包含于焊膏3内的焊料粒子5，且焊料粒子5夹持在第二端子8和第一端子2之间。这里，图中仅示出两个焊料粒子5，然而实际上，具有上述粒径的粒子存在的数量约为几十至几百。
接着，执行热压接合以将挠性基板7接合到刚性基板1。也就是说，如图2(c)所示，压着接合工具10的温度上升，同时通过压着接合工具10以预定压着负荷F将挠性基板7压抵刚性基板1，且挠性基板7被加热到比热固性树脂3a的固化温度高的温度。在该加热中，在温度上升并到达焊料的熔点温度的时间点，首先，焊膏3中的焊料粒子5熔化且使第一端子2和第二端子8相互电连接。
随后，在焊料粒子5熔化之后，温度进一步上升，由此热固性树脂3a热固化且使刚性基板1和挠性基板7相互接合。对于热压接合，图2(b)所示的部件安装和图2(c)所示的热压接合可以在一系列作业工艺内执行，或者该部件安装和热压接合可以在分离的作业工艺内执行。在热压接合中，仅挠性基板7被加热，或者刚性基板1和挠性基板7均被加热。
该部件接合方法包括如下步骤：通过将焊膏施加到刚性基板1上从而覆盖第一端子2，将如上所述构成的焊膏3夹置于刚性基板1和挠性基板7之间；以及在加热该刚性基板1和/或挠性基板7的同时将第一端子2和第二端子8彼此压着而通过该焊料粒子5使第一端子2和第二端子8电连接，并通过热固化热固性树脂3a使刚性基板1和挠性基板7相互接合。热固性树脂3a的固化温度设置为使得该热固性树脂在比焊料粒子5的熔点温度高的温度热固化，且在用于热压接合的加热中，加热是在比热固性树脂3a的固化温度高的温度进行。
参考图3和图4描述在部件安装及热压接合步骤以及焊料接合中第一端子2、第二端子8和焊料粒子5的表面状态变化。图3(a)示出这样的状态，挠性基板7下降到刚性基板1且第二端子8与焊膏3接触。在该状态下，焊膏3内的活性剂6作用于氧化物膜2a、8a和5a，且氧化物膜2a、8a和5a被部分除去。
此时，焊膏3内的活性剂6与排除焊料粒子5的剩余部分的混合比例不大于重量的1％，低于传统例子，使得活性剂6的氧化物膜除去作用不作用于第一端子2、第二端子8和焊料粒子5与焊膏3的全部接触面，且仅仅是部分地除去氧化物膜。由此，如图3(b)所示，在第一端子2、第二端子8和焊料粒子5的表面上，按照与活性剂6的混合比例相对应的比例形成氧化物膜除去部分2b、8b和5b，其中在氧化物膜除去部分2b、8b和5b，氧化物膜2a、8a和5a由于活性剂6的作用而被部分除去。
关于这些氧化物膜除去部分，当通过将焊料粒子5连同活性剂6混合在热固性树脂3a内来制备焊膏3时，焊料粒子5的氧化物膜除去部分5b形成。当焊膏3施加在刚性基板1上时，第一端子2的氧化物膜除去部分2b形成，以及当挠性基板7下降且第二端子8与焊膏3接触时，第二端子8的氧化物膜除去部分8b形成。
在用于与焊膏3相同目的且同样地包含焊料粒子的传统焊膏中在焊料粒子表面上的氧化物膜在焊料接合步骤必需完全或者几乎完全除去的技术思想之下，确定用于除去氧化物膜的活性剂的混合比例，且必需混合至少重量的7％的活性剂。另一方面，在本实施例所示的焊膏3中，活性剂的混合比例设置为比传统比例低的重量的1％，且因此，将氧化物膜除去限制为部分的并实现下述出色效果。
图4(a)示出一状态，焊料粒子5在该状态下夹持并压着在第一端子2和第二端子8之间。如上所述，第一端子2、第二端子8和焊料粒子5的表面的大部分被氧化物膜2a、8a和5a覆盖，使得焊料粒子5与第一端子2及第二端子8不处于其新相面(new phase)彼此完全接触的状态。
然而，约为几十至几百的焊料粒子5存在于第二端子8和第一端子2之间，使得概率性地，至少若干焊料粒子5的氧化物膜除去部分5b与氧化物膜除去部分2b及氧化物膜除去部分8b的位置一致或者接近。随后，焊料粒子5夹持并压着在第一端子2和第二端子8之间，接触部分上的氧化物膜5a部分被破坏，且焊料粒子5的新相面和第一端子2及第二端子8的新相面高可能性地部分相互接触。
随后，在焊料粒子5由于加热而熔化的焊料接合步骤，熔化的焊料变得润湿，并在第一端子2和第二端子8表面上包括氧化物膜除去部分2b和氧化物膜除去部分8b的范围内扩展。此时，焊料粒子5的熔化焊料被焊料接合到第一端子2和第二端子8的新相面，尽管这种接合是部分的，且因此形成相互电连接第一端子2和第二端子8的焊料部分5*。此时，通过选择固化剂使得热固性树脂3a的热固化温度高于焊料粒子5的熔点温度，防止热固性树脂3a干扰焊料粒子5熔化时的流动性，可以保证焊料粒子5的润湿和扩展且可以获得更出色的焊料部分5*。
在夹持于刚性基板1和挠性基板7之间的间隙内，在第一端子2和第二端子8彼此面对的部分以外的部分中，存在对于焊料部分5*的形成没有贡献的焊料粒子5，且这些焊料粒子5包含在通过热固化热固性树脂3a而形成的树脂部分3*中。这些焊料粒子5如上所述没有完全受到活性剂6作用的影响，焊料粒子5维持这样的状态，即，其表面的大部分被未被活性剂6除去而留下的氧化物膜5a覆盖。
因此，热固性树脂3a中彼此接近的焊料粒子5熔化和相互润湿并相互熔合的可能性低，使得有效地防止多个焊料粒子5在热固性树脂3a内相互熔合并通过熔化焊料形成将第一端子2或第二端子8相互连接的焊料桥接。这意味着，热固性树脂3a中包含焊料粒子5作为导电粒子的各向异性导电粘合剂中，即使导电粒子的混合比例设置为高于正常值，绝缘性能也不会劣化。因此，为了改善导电的目的而增加导电粒子的浓度时绝缘性能劣化的悖论可得以解决。
也就是说，如图4(b)所示，通过本实施例的部件接合方法实现的部件接合结构包括：焊料部分5*，该焊料部分是通过将焊料粒子5熔化并焊料接合到第一端子2和第二端子8二者而形成，且该焊料部分使第一端子2和第二端子8相互电连接；以及树脂部分3*，该树脂部分是通过固化热固性树脂3a而形成，使刚性基板1和挠性基板7相互接合，并包括在焊料粒子5不相互熔合的状态下对焊料部分5*的形成没有贡献的焊料粒子5。对焊料部分5*的形成没有贡献的焊料粒子5的表面被未被活性剂6除去而留下的氧化物膜5a覆盖。
如上所述，在本实施例的部件接合方法中，通过结合焊料粒子5的含量比例而恰当地设置焊膏3中活性剂6的混合比例，焊料粒子5的表面状态即氧化物膜5a的除去程度设置为使得，第一端子2和第二端子8通过焊料接合稳定地相互电连接，并防止多个焊料粒子5相互熔合以及在树脂部分3*内形成焊料桥接。通过如下所述评价部件接合性能的测试，根据实验发现活性剂6的混合比例和焊料粒子5的含量比例的组合来满足这些条件。
将参考(表1)描述针对该目的所执行的对焊膏的部件接合性能的评价结果。
[表1]
<焊膏基本数据>
焊料组成：Sn-Ag-Cu基         粒径：10-30μm
树脂：环氧树脂
固化剂：酸酐
活性剂：有机酸
Figure A200780005205D00121
Figure A200780005205D00131
该评价结果是对部件接合结构的评价结果的整理，这些评价结果是通过使用如表1的焊膏基本数据所示而构成的焊膏3实际进行部件接合而得到的。这里，如上所述使用焊膏3，该焊膏3包含主要由环氧树脂组成的热固性树脂3a中通过将具有Sn-Ag-Cu基焊料组成的焊料形成为粒径(particlediameter)为10～30μm的粒子而得到的焊料粒子5，并包含酸酐作为固化剂以及有机酸作为活性剂。
这里，作为测试条件，活性剂混合比例改变为0％、1％和3％三个比例，且在这些活性剂混合比例的每一个，焊料含量比例改变为七个比例(5％、15％、30％、45％、60％、75％和90％)，并且在这些条件下，实际进行部件接合。随后，关于每一个得到的部件接合结构，评价三个项目“短路”、“导通”和“粒子熔合”。
“短路”示出第一端子2和第二端子8之间是否发生电学短路的电学检查的结果，“G”标记表示没有发生电学短路，且“NG”标记表示发生电学短路。“导通”示出第一端子2和第二端子8之间的电阻是否突破(cleared)所要求的导通水平，“G”标记表示测量的电阻低于规定电阻，且“NG”标记表示测量的电阻高于规定电阻。
“粒子熔合”示出在树脂部分3*中是否出现焊料内的多个焊料粒子5相互熔合，且通过观察实际部件接合部分的断面切割来评价。也就是说，“G”标记表示粒子不相互熔合，且“NG”标记表示粒子相互熔合。对“粒子熔合”的评价的含意为，通过观察焊料粒子5的实际状态来确认“短路”的发生趋势。“整体”是综合所述三个项目来对部件接合性能的评价，在所有三个项目中用标记“G”来标记的焊膏从部件接合性能整体上被判定为合格并用“G”标记。
从(表1)的评价结果理解，当活性剂混合比例为0％和1％且在这些比例，焊料含量比例在重量的30％和75％之间时，整体评价用“G”标记。这里，即使当活性剂混合比例为0％时仍得到令人满意的结果的原因在于，所混合的作为固化剂的酸酐也具有轻微的氧化物膜除去能力，且由于该酸酐的存在，第一端子2、第二端子8和焊料粒子5的氧化物膜被部分地除去。
也就是说，对于焊膏3，通过使用焊膏3，该焊膏3包含热固性树脂中比例为重量的30％～75％的主要由锡(Sn)组成的焊料粒子5，包含作为用于固化热固性树脂3a的固化剂的酸酐，并包含用于除去焊料粒子5的自然氧化物膜5a的活性剂6，活性剂6与排除焊料粒子5的剩余部分的比例不超过重量的1％，而不发生树脂部分3*内由于焊料粒子5的粒子熔合而引起的端子之间的短路，由此可以实现在第一端子2和第二端子8之间具有出色导通性的部件接合结构。
实现所述部件接合性能的焊膏3的组成不限于上述示例，且对于用于固化焊膏3内的热固性树脂3a的固化剂，可以使用潜性固化剂。这种情况下，用于获得上述相同效果的活性剂的最优混合比例不同于(表1)，且得到(表2)所示结果。下面将描述(表2)的评价结果。除了固化剂类型之外，这里所示的焊膏基本数据与(表1)的示例相同。
[表2]
<焊膏基本数据>
焊料组成：Sn-Ag-Cu基         粒径：10-30μm
树脂：环氧树脂
固化剂：潜性固化剂
活性剂：有机酸
Figure A200780005205D00141
Figure A200780005205D00151
这里，作为测试条件，活性剂混合比例改变为0％、1％、3％和7％四个比例，且在这些活性剂混合比例的每一个，焊料含量比例改变为七个比例(5％、15％、30％、45％、60％、75％和90％)，并且在这些条件下，按照与(表1)相同的方式进行部件接合。随后，关于每一个得到的部件接合结构，根据与(表1)相同的方法和标准，评价三个项目“短路”、“导通”和“粒子熔合”。
从(表2)的评价结果理解，当活性剂混合比例为1％和5％且在这些比例，焊料含量比例在重量的30％和75％之间时，整体评价用“G”标记。也就是说，对于焊膏3，通过使用焊膏3，该焊膏3包含热固性树脂中比例为重量的30％～75％的主要由锡(Sn)组成的焊料粒子，包含用于固化热固性树脂的潜性固化剂，并包含用于除去自然氧化物膜以及焊料粒子5的氧化物膜5a的活性剂6，活性剂6与排除焊料粒子5的剩余部分的比例为重量的1％～5％，与上述示例类似地，而不发生树脂部分3*内由于焊料粒子5的粒子熔合而引起的端子之间的短路，由此可以实现在第一端子2和第二端子8之间具有出色导通性的部件接合结构。
因此，在这样的构造中，其中通过使用在热固性树脂3a内包含焊料粒子5的焊膏3利用焊料使第一端子2和第二端子8电连接，并通过固化热固性树脂3a使刚性基板1和挠性基板7相互接合，通过结合焊料粒子5的含量比例而恰当地设置焊膏3中热固性树脂3a的活性剂的混合比例，端子可以通过焊料接合而稳定地电学导通，且由于热固性树脂内焊料粒子相互熔合引起的短路可以有效地避免。由此，当进行部件接合从而电学导通端子或电极时，其中该端子或电极低成本地由铜或铜基合金制成并由于暴露于空气而覆盖有自然氧化物膜，可以高可靠性地保证低电阻的出色导通。
本实施例描述了这样的示例，其中均由铜基合金制成并覆盖有自然氧化物膜的作为第一端子的第一端子2和作为第二端子的第二端子8相互接合，然而，本发明不限于此。例如，任一端子可具有贵金属表面，例如具有金属凸点或设有金的表面的电极。也就是说，只要至少任一该第一端子或第二端子的表面覆盖有自然氧化物膜，本发明是适用的。
工业应用性
本发明的部件接合方法和部件接合结构带来了高可靠性地实现部件接合的效果，该部件接合保证了低电阻导通，且该部件接合方法和部件接合结构可以应用于通过焊料接合将电子部件安装在基板上。
本申请是基于并主张2006年4月3日申请的日本专利申请No.2006-101778的优先权利益，其全部内容引用结合于此。

Claims (13)

1.一种部件接合方法，用于使第一端子和第二端子相互电连接并使第一部件和第二部件相互接合，所述第一端子和第二端子分别设置于所述第一部件和第二部件上且至少任一表面覆盖有自然氧化物膜，所述部件接合方法包括如下步骤：
将焊膏夹置于所述第一部件和第二部件之间，所述焊膏包含位于热固性树脂内主要由锡组成的焊料粒子；以及
在加热所述第一部件和/或第二部件的同时将所述第一端子和第二端子彼此压着而通过所述焊料粒子使所述第一端子和第二端子电连接，并通过固化所述热固性树脂而使所述第一部件和第二部件相互接合，
其中所述焊膏包含作为用于固化所述热固性树脂的固化剂的酸酐，且还包含除去所述自然氧化物膜和所述焊料粒子的氧化物膜的活性剂，所述活性剂与排除所述焊料粒子的剩余部分的比例不超过重量的1％。
2.如权利要求1所述的部件接合方法，其中所述第一端子和第二端子是由铜或铜基合金制成。
3.如权利要求1所述的部件接合方法，其中所述热固性树脂在比焊料的熔点温度高的温度热固化。
4.如权利要求1所述的部件接合方法，其中所述加热是在比所述热固性树脂的固化温度高的温度进行。
5.一种部件接合方法，用于使第一端子和第二端子相互电连接并使第一部件和第二部件相互接合，所述第一端子和第二端子分别设置于第一部件和第二部件上且至少任一表面覆盖有自然氧化物膜，所述部件接合方法包括如下步骤：
将焊膏夹置于所述第一部件和第二部件之间，所述焊膏包含位于热固性树脂内主要由锡组成的焊料粒子；以及
在加热所述第一部件和/或第二部件的同时将所述第一端子和第二端子彼此压着而通过所述焊料粒子使所述第一端子和第二端子电连接，并通过固化所述热固性树脂而使所述第一部件和第二部件相互接合，
其中所述焊膏包含用于固化所述热固性树脂的潜性固化剂，且还包含除去所述自然氧化物膜和所述焊料粒子的氧化物膜的活性剂，所述活性剂与排除所述焊料粒子的剩余部分的比例为重量的1％～5％。
6.如权利要求5所述的部件接合方法，其中所述第一端子和第二端子是由铜或铜基合金制成。
7.如权利要求5所述的部件接合方法，其中所述热固性树脂在比所述焊料的熔点温度高的温度热固化。
8.如权利要求5所述的部件接合方法，其中所述加热是在比所述热固性树脂的固化温度高的温度进行。
9.一种部件接合结构，所述部件接合结构是通过将焊膏夹置于第一部件和第二部件之间，加热所述第一部件和/或第二部件，并将第一端子和第二端子彼此压着而形成，所述焊膏包含位于热固性树脂内主要由锡组成的焊料粒子，所述第一端子和第二端子分别设置于所述第一部件和第二部件上且至少任一表面覆盖有自然氧化物膜，所述部件接合结构包括：
焊料部分，所述焊料部分是通过将所述焊料粒子熔化并焊料接合到所述第一端子和第二端子二者而形成，且所述焊料部分使所述第一端子和第二端子相互电连接；以及
树脂部分，所述树脂部分是通过固化所述热固性树脂而形成，使所述第一部件和第二部件相互接合，并包括在所述焊料粒子不相互熔合的状态下对所述焊料部分的形成没有贡献的焊料粒子。
10.如权利要求9所述的部件接合结构，其中对所述焊料部分的形成没有贡献的所述焊料粒子的表面覆盖有未被所述活性剂除去而留下的氧化物膜。
11.如权利要求9所述的部件接合结构，其中所述第一端子和第二端子是由铜或铜基合金制成。
12.一种在部件接合方法中使用的焊膏，所述部件接合方法用于使第一端子和第二端子相互电连接并使第一部件和第二部件相互接合，所述第一端子和第二端子分别设置于第一部件和第二部件上且至少任一表面覆盖有自然氧化物膜，其中：
所述焊膏包含热固性树脂以及作为用于固化所述热固性树脂的固化剂的酸酐，所述热固性树脂包含主要由锡组成的焊料粒子，并且所述焊膏还包含除去所述自然氧化物膜和所述焊料粒子的氧化物膜的活性剂，所述活性剂与排除所述焊料粒子的剩余部分的比例不超过重量的1％。
13.一种在部件接合方法中使用的焊膏，所述部件接合方法用于使第一端子和第二端子相互电连接并使第一部件和第二部件相互接合，所述第一端子和第二端子分别设置于第一部件和第二部件上且至少任一表面覆盖有自然氧化物膜，其中：
所述焊膏包含热固性树脂以及用于固化所述热固性树脂的潜性固化剂，所述热固性树脂包含主要由锡组成的焊料粒子，并且所述焊膏还包含除去所述自然氧化物膜和所述焊料粒子的氧化物膜的活性剂，所述活性剂与排除所述焊料粒子的剩余部分的比例为重量的1～5％。
CN2007800052057A 2006-04-03 2007-04-03 部件接合方法和部件接合结构 Active CN101416568B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP101778/2006 2006-04-03
JP2006101778A JP4591399B2 (ja) 2006-04-03 2006-04-03 部品接合方法ならびに部品接合構造
PCT/JP2007/057801 WO2007116990A1 (en) 2006-04-03 2007-04-03 Components joining method and components joining structure

Publications (2)

Publication Number Publication Date
CN101416568A true CN101416568A (zh) 2009-04-22
CN101416568B CN101416568B (zh) 2011-04-13

Family

ID=38222582

Family Applications (1)

Application Number Title Priority Date Filing Date
CN2007800052057A Active CN101416568B (zh) 2006-04-03 2007-04-03 部件接合方法和部件接合结构

Country Status (7)

Country Link
US (2) US8018074B2 (zh)
EP (1) EP2002698A1 (zh)
JP (1) JP4591399B2 (zh)
KR (1) KR20090004850A (zh)
CN (1) CN101416568B (zh)
TW (1) TW200803666A (zh)
WO (1) WO2007116990A1 (zh)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102208388A (zh) * 2010-03-29 2011-10-05 松下电器产业株式会社 半导体装置以及半导体装置的制造方法
CN102205470A (zh) * 2010-03-29 2011-10-05 韩国电子通信研究院 填充组合物、包括其的半导体装置及该半导体装置的制法
CN103560089A (zh) * 2013-10-22 2014-02-05 西安东风仪表厂 表贴元器件引脚去氧化方法
CN103959451A (zh) * 2012-01-17 2014-07-30 松下电器产业株式会社 半导体装置制造方法以及半导体装置
CN107004975A (zh) * 2015-02-19 2017-08-01 积水化学工业株式会社 连接结构体的制造方法
CN107614185A (zh) * 2015-05-29 2018-01-19 株式会社村田制作所 接合用构件和接合方法
CN107835724A (zh) * 2015-11-05 2018-03-23 株式会社村田制作所 接合用构件和接合用构件的制造方法
CN113145960A (zh) * 2021-05-06 2021-07-23 昆山联滔电子有限公司 一种电子产品焊接方法

Families Citing this family (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6835936B2 (en) 2001-02-07 2004-12-28 Canon Kabushiki Kaisha Scintillator panel, method of manufacturing scintillator panel, radiation detection device, and radiation detection system
JP4920058B2 (ja) * 2009-06-03 2012-04-18 株式会社タムラ製作所 はんだ接合剤組成物
JPWO2011001837A1 (ja) * 2009-07-02 2012-12-13 シャープ株式会社 配線シート付き太陽電池セル、太陽電池モジュールおよび配線シート付き太陽電池セルの製造方法
CN101992651A (zh) * 2009-08-18 2011-03-30 深圳富泰宏精密工业有限公司 镶金方法及由该方法制得的镶金电子装置外壳
JP5518500B2 (ja) * 2010-01-20 2014-06-11 昭和電工株式会社 はんだ粉末付着装置および電子回路基板に対するはんだ粉末の付着方法
JP5807221B2 (ja) * 2010-06-28 2015-11-10 アユミ工業株式会社 接合構造体製造方法および加熱溶融処理方法ならびにこれらのシステム
JP5310664B2 (ja) * 2010-07-12 2013-10-09 パナソニック株式会社 電子部品実装方法
JP5842084B2 (ja) * 2010-09-27 2016-01-13 パナソニックＩｐマネジメント株式会社 半導体部品実装基板
JP6490328B2 (ja) * 2012-06-20 2019-03-27 日亜化学工業株式会社 発光装置及びその製造方法
JP6061642B2 (ja) * 2012-09-24 2017-01-18 株式会社タムラ製作所 異方性導電性ペーストおよびそれを用いたプリント配線基板
JP6061643B2 (ja) * 2012-09-24 2017-01-18 株式会社タムラ製作所 異方性導電性ペーストおよびそれを用いたプリント配線基板
JP6061645B2 (ja) * 2012-09-24 2017-01-18 株式会社タムラ製作所 異方性導電性ペーストおよびそれを用いたプリント配線基板
JP6061644B2 (ja) * 2012-09-24 2017-01-18 株式会社タムラ製作所 異方性導電性ペーストおよびそれを用いたプリント配線基板
JP6068106B2 (ja) * 2012-09-24 2017-01-25 株式会社タムラ製作所 異方性導電性ペーストおよびそれを用いたプリント配線基板
TWI463710B (zh) * 2012-10-05 2014-12-01 Subtron Technology Co Ltd 接合導熱基板與金屬層的方法
JP6173758B2 (ja) * 2013-04-24 2017-08-02 日本電波工業株式会社 接合型水晶発振器
JP6358535B2 (ja) * 2013-04-26 2018-07-18 パナソニックＩｐマネジメント株式会社 配線板間接続構造、および配線板間接続方法
JP5887304B2 (ja) * 2013-06-21 2016-03-16 株式会社タムラ製作所 異方性導電性ペーストおよびそれを用いたプリント配線基板
KR20150094125A (ko) * 2014-02-10 2015-08-19 한국전자통신연구원 반도체 소자 및 이를 제조하는 방법
KR102360487B1 (ko) * 2014-02-24 2022-02-10 세키스이가가쿠 고교가부시키가이샤 접속 구조체의 제조 방법
JP2014209624A (ja) * 2014-04-18 2014-11-06 パナソニック株式会社 回路基板と半導体部品との接合部構造
JP6534122B2 (ja) 2015-12-28 2019-06-26 パナソニックＩｐマネジメント株式会社 樹脂フラックスはんだペースト及び実装構造体
US20190206587A1 (en) * 2016-09-09 2019-07-04 Sekisui Chemical Co., Ltd. Conductive material, connection structure body, and connection structure body production method
KR101880053B1 (ko) * 2017-04-26 2018-07-20 (주)노피온 갭퍼를 포함하는 이방성 도전 접착제의 제조방법 및 갭퍼를 이용하는 부품 실장방법
US10636761B2 (en) 2017-08-29 2020-04-28 Electronics And Telecommunications Reearch Institute Method of fabricating a semiconductor package
JP6766087B2 (ja) * 2018-03-23 2020-10-07 株式会社タムラ製作所 熱硬化性フラックス組成物および電子基板の製造方法
US11488841B2 (en) * 2019-02-20 2022-11-01 Electronics And Telecommunications Research Institute Method for manufacturing semiconductor package

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5136365A (en) * 1990-09-27 1992-08-04 Motorola, Inc. Anisotropic conductive adhesive and encapsulant material
US5447267A (en) * 1993-02-08 1995-09-05 Matsushita Electric Industrial Co., Ltd. Method of soldering electronic part using a bond for tacking the electronic part
US6179198B1 (en) * 1996-09-18 2001-01-30 Matsushita Electric Industrial Co., Ltd. Method of soldering bumped work by partially penetrating the oxide film covering the solder bumps
JPH114064A (ja) 1997-06-12 1999-01-06 Nec Corp 異方性導電樹脂及びこれを用いた電子部品の実装構造
SE510861C2 (sv) * 1997-07-11 1999-06-28 Ericsson Telefon Ab L M Anordning och förfarande i elektroniksystem
JP3381601B2 (ja) * 1998-01-26 2003-03-04 松下電器産業株式会社 バンプ付電子部品の実装方法
JP3996276B2 (ja) * 1998-09-22 2007-10-24 ハリマ化成株式会社 ソルダペースト及びその製造方法並びにはんだプリコート方法
WO2004070827A1 (ja) 2003-02-05 2004-08-19 Senju Metal Industry Co., Ltd. 端子間の接続方法及び半導体装置の実装方法
JP3797990B2 (ja) * 2003-08-08 2006-07-19 株式会社東芝 熱硬化性フラックス及びはんだペースト
CN101005917A (zh) 2004-08-25 2007-07-25 松下电器产业株式会社 焊料组合物、利用焊接的连接方法和利用焊接的连接结构
US7221050B2 (en) * 2004-09-02 2007-05-22 Intel Corporation Substrate having a functionally gradient coefficient of thermal expansion
JP4356581B2 (ja) 2004-10-12 2009-11-04 パナソニック株式会社 電子部品実装方法
JP4650220B2 (ja) * 2005-11-10 2011-03-16 パナソニック株式会社 電子部品の半田付け方法および電子部品の半田付け構造

Cited By (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102208388A (zh) * 2010-03-29 2011-10-05 松下电器产业株式会社 半导体装置以及半导体装置的制造方法
CN102205470A (zh) * 2010-03-29 2011-10-05 韩国电子通信研究院 填充组合物、包括其的半导体装置及该半导体装置的制法
CN102208388B (zh) * 2010-03-29 2014-12-17 松下电器产业株式会社 半导体装置以及半导体装置的制造方法
CN103959451A (zh) * 2012-01-17 2014-07-30 松下电器产业株式会社 半导体装置制造方法以及半导体装置
CN103560089A (zh) * 2013-10-22 2014-02-05 西安东风仪表厂 表贴元器件引脚去氧化方法
CN103560089B (zh) * 2013-10-22 2017-02-08 中船重工西安东仪科工集团有限公司 表贴元器件引脚去氧化方法
CN107004975A (zh) * 2015-02-19 2017-08-01 积水化学工业株式会社 连接结构体的制造方法
CN107004975B (zh) * 2015-02-19 2018-12-21 积水化学工业株式会社 连接结构体的制造方法
CN107614185A (zh) * 2015-05-29 2018-01-19 株式会社村田制作所 接合用构件和接合方法
CN107614185B (zh) * 2015-05-29 2020-09-08 株式会社村田制作所 接合用构件和接合方法
US11819915B2 (en) 2015-05-29 2023-11-21 Murata Manufacturing Co., Ltd. Bonding member and bonding method
CN107835724A (zh) * 2015-11-05 2018-03-23 株式会社村田制作所 接合用构件和接合用构件的制造方法
CN107835724B (zh) * 2015-11-05 2020-09-08 株式会社村田制作所 接合用构件和接合用构件的制造方法
CN113145960A (zh) * 2021-05-06 2021-07-23 昆山联滔电子有限公司 一种电子产品焊接方法

Also Published As

Publication number Publication date
JP2007280999A (ja) 2007-10-25
EP2002698A1 (en) 2008-12-17
US8018074B2 (en) 2011-09-13
US8188605B2 (en) 2012-05-29
US20090047534A1 (en) 2009-02-19
US20110284265A1 (en) 2011-11-24
TW200803666A (en) 2008-01-01
JP4591399B2 (ja) 2010-12-01
CN101416568B (zh) 2011-04-13
KR20090004850A (ko) 2009-01-12
WO2007116990A1 (en) 2007-10-18

Similar Documents

Publication Publication Date Title
CN101416568B (zh) 部件接合方法和部件接合结构
KR101221148B1 (ko) 이방성 도전 재료
KR101982034B1 (ko) 이방성 도전성 페이스트 및 그것을 사용한 전자부품의 접속방법
EP0549159B1 (en) Method and adhesive for making electrical and mechanical connections
JP5093766B2 (ja) 導電性ボール等搭載半導体パッケージ基板の製造方法
WO2008016140A1 (en) Bonding material, bonded portion and circuit board
JPH1145618A (ja) 導電ペースト構造およびその製造方法
JP5023583B2 (ja) ソルダーペースト組成物及びそれを用いたプリント配線基板への電子部品実装方法
JP2003211289A (ja) 導電性接合材料、それを用いた接合方法及び電子機器
JPWO2013047137A1 (ja) 接合材料、及び電子部品の製造方法、並びに電子装置
JP2011056527A (ja) はんだ接合剤組成物
CN104221223A (zh) 各向异性导电片材以及使用其的电极接合方法
JPH08330726A (ja) 基板と被接続材との接続方法及びその接続構造及びその接続用補助材料
JP2006265484A (ja) 接着性樹脂組成物及び電子装置
JPH10279902A (ja) 導電性接着剤
JP2003305588A (ja) 接合材料
JP2001143529A (ja) クリームハンダ配合による導電性接合剤およびそれを使用した接合方法
JP4865406B2 (ja) 半導体素子実装構造体
JPH10279903A (ja) 導電性接着剤
JP2018126787A (ja) はんだペーストとそれにより得られる実装構造体
JP5113390B2 (ja) 配線間接続方法
JP2010245434A (ja) はんだ接合方法およびはんだ接合構造体
JP2007081198A (ja) 端子間の導電的接続方法
JP2012023263A (ja) 電子部品接合方法
JPH11209716A (ja) 導電性の接着剤

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant