CN101410547A - 用于形成薄膜太阳能电池的基于托盘的系统 - Google Patents
用于形成薄膜太阳能电池的基于托盘的系统 Download PDFInfo
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- 239000010409 thin film Substances 0.000 title abstract description 15
- 239000000758 substrate Substances 0.000 claims abstract description 103
- 238000006243 chemical reaction Methods 0.000 claims abstract description 21
- 239000000463 material Substances 0.000 claims description 59
- 238000000151 deposition Methods 0.000 claims description 43
- 238000000034 method Methods 0.000 claims description 41
- 230000005693 optoelectronics Effects 0.000 claims description 31
- 239000004065 semiconductor Substances 0.000 claims description 30
- 239000006096 absorbing agent Substances 0.000 claims description 23
- 239000000956 alloy Substances 0.000 claims description 23
- 230000008021 deposition Effects 0.000 claims description 23
- 239000002243 precursor Substances 0.000 claims description 23
- 229910045601 alloy Inorganic materials 0.000 claims description 21
- 239000011669 selenium Substances 0.000 claims description 20
- 229910052751 metal Inorganic materials 0.000 claims description 19
- 239000002184 metal Substances 0.000 claims description 19
- 239000010949 copper Substances 0.000 claims description 15
- 238000012545 processing Methods 0.000 claims description 13
- 230000000903 blocking effect Effects 0.000 claims description 10
- 239000000203 mixture Substances 0.000 claims description 9
- 229910052711 selenium Inorganic materials 0.000 claims description 9
- 229910052802 copper Inorganic materials 0.000 claims description 8
- 229910052738 indium Inorganic materials 0.000 claims description 8
- 239000004020 conductor Substances 0.000 claims description 6
- 238000007669 thermal treatment Methods 0.000 claims description 6
- 229910052733 gallium Inorganic materials 0.000 claims description 5
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 4
- 239000002019 doping agent Substances 0.000 claims description 4
- 229910052750 molybdenum Inorganic materials 0.000 claims description 4
- 239000011733 molybdenum Substances 0.000 claims description 4
- 230000003647 oxidation Effects 0.000 claims description 4
- 238000007254 oxidation reaction Methods 0.000 claims description 4
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 claims description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 3
- 230000005291 magnetic effect Effects 0.000 claims description 3
- 229910052760 oxygen Inorganic materials 0.000 claims description 3
- 239000010936 titanium Substances 0.000 claims description 3
- 229910052719 titanium Inorganic materials 0.000 claims description 3
- 230000017105 transposition Effects 0.000 claims description 3
- 230000004888 barrier function Effects 0.000 claims description 2
- HVMJUDPAXRRVQO-UHFFFAOYSA-N copper indium Chemical compound [Cu].[In] HVMJUDPAXRRVQO-UHFFFAOYSA-N 0.000 claims description 2
- 230000005611 electricity Effects 0.000 claims description 2
- 239000011810 insulating material Substances 0.000 claims description 2
- SBIBMFFZSBJNJF-UHFFFAOYSA-N selenium;zinc Chemical compound [Se]=[Zn] SBIBMFFZSBJNJF-UHFFFAOYSA-N 0.000 claims description 2
- 238000009413 insulation Methods 0.000 claims 3
- 229910052793 cadmium Inorganic materials 0.000 claims 2
- 229910052717 sulfur Inorganic materials 0.000 claims 2
- 229910052725 zinc Inorganic materials 0.000 claims 2
- 229910052715 tantalum Inorganic materials 0.000 claims 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 description 26
- 238000013461 design Methods 0.000 description 16
- 238000005516 engineering process Methods 0.000 description 16
- 239000010408 film Substances 0.000 description 10
- 238000010438 heat treatment Methods 0.000 description 10
- 229910021417 amorphous silicon Inorganic materials 0.000 description 9
- 150000001875 compounds Chemical class 0.000 description 8
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 6
- 230000005540 biological transmission Effects 0.000 description 6
- 229910052799 carbon Inorganic materials 0.000 description 6
- 229910052732 germanium Inorganic materials 0.000 description 6
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 5
- 229910052796 boron Inorganic materials 0.000 description 5
- 239000004567 concrete Substances 0.000 description 5
- 238000001704 evaporation Methods 0.000 description 5
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical group [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 5
- 238000002955 isolation Methods 0.000 description 5
- 229910052698 phosphorus Inorganic materials 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
- 238000005137 deposition process Methods 0.000 description 4
- 239000013049 sediment Substances 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 238000007740 vapor deposition Methods 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 3
- 238000005452 bending Methods 0.000 description 3
- 230000002950 deficient Effects 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 239000011574 phosphorus Substances 0.000 description 3
- 239000004033 plastic Substances 0.000 description 3
- 229920003023 plastic Polymers 0.000 description 3
- 238000005096 rolling process Methods 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 2
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 2
- 239000005864 Sulphur Substances 0.000 description 2
- 239000004411 aluminium Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 125000004429 atom Chemical group 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 238000011143 downstream manufacturing Methods 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- 210000004744 fore-foot Anatomy 0.000 description 2
- 229910000078 germane Inorganic materials 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 2
- MRNHPUHPBOKKQT-UHFFFAOYSA-N indium;tin;hydrate Chemical compound O.[In].[Sn] MRNHPUHPBOKKQT-UHFFFAOYSA-N 0.000 description 2
- 238000011068 loading method Methods 0.000 description 2
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 2
- 125000004437 phosphorous atom Chemical group 0.000 description 2
- 230000005622 photoelectricity Effects 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 1
- 229910001370 Se alloy Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- PKLGPLDEALFDSB-UHFFFAOYSA-N [SeH-]=[Se].[In+3].[Cu+2].[SeH-]=[Se].[SeH-]=[Se].[SeH-]=[Se].[SeH-]=[Se] Chemical class [SeH-]=[Se].[In+3].[Cu+2].[SeH-]=[Se].[SeH-]=[Se].[SeH-]=[Se].[SeH-]=[Se] PKLGPLDEALFDSB-UHFFFAOYSA-N 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000010924 continuous production Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 239000002178 crystalline material Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- ZOCHARZZJNPSEU-UHFFFAOYSA-N diboron Chemical compound B#B ZOCHARZZJNPSEU-UHFFFAOYSA-N 0.000 description 1
- VXGHASBVNMHGDI-UHFFFAOYSA-N digermane Chemical compound [Ge][Ge] VXGHASBVNMHGDI-UHFFFAOYSA-N 0.000 description 1
- XIMIGUBYDJDCKI-UHFFFAOYSA-N diselenium Chemical compound [Se]=[Se] XIMIGUBYDJDCKI-UHFFFAOYSA-N 0.000 description 1
- 238000004821 distillation Methods 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 230000005294 ferromagnetic effect Effects 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 239000007792 gaseous phase Substances 0.000 description 1
- 238000007429 general method Methods 0.000 description 1
- VGRFVJMYCCLWPQ-UHFFFAOYSA-N germanium Chemical compound [Ge].[Ge] VGRFVJMYCCLWPQ-UHFFFAOYSA-N 0.000 description 1
- HJTZHRBGNWZTKK-UHFFFAOYSA-J germanium tetrafluoride Chemical compound [F-].[F-].[F-].[F-].[Ge+4] HJTZHRBGNWZTKK-UHFFFAOYSA-J 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 239000008204 material by function Substances 0.000 description 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- VYMDGNCVAMGZFE-UHFFFAOYSA-N phenylbutazonum Chemical compound O=C1C(CCCC)C(=O)N(C=2C=CC=CC=2)N1C1=CC=CC=C1 VYMDGNCVAMGZFE-UHFFFAOYSA-N 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 229920000307 polymer substrate Polymers 0.000 description 1
- 239000000376 reactant Substances 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000009331 sowing Methods 0.000 description 1
- 229910052950 sphalerite Inorganic materials 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- 239000002023 wood Substances 0.000 description 1
- 229910052984 zinc sulfide Inorganic materials 0.000 description 1
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-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1876—Particular processes or apparatus for batch treatment of the devices
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
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- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
- C23C14/568—Transferring the substrates through a series of coating stations
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/032—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
- H01L31/0322—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312 comprising only AIBIIICVI chalcopyrite compounds, e.g. Cu In Se2, Cu Ga Se2, Cu In Ga Se2
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- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type
- H01L31/0749—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type including a AIBIIICVI compound, e.g. CdS/CulnSe2 [CIS] heterojunction solar cells
-
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- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/541—CuInSe2 material PV cells
-
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- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
本发明提供一种通过将基于托盘的衬底提供到一系列反应室而制造的光电薄膜太阳能电池,可在基于托盘的所述衬底上循序地形成层。
Description
相关申请案的交叉参考
本申请案主张2004年11月10日申请的第60/626,843号美国临时专利申请案的优先权。
技术领域
本文揭示的本发明大体上涉及光电领域,且更确切地说,涉及使用基于托盘的系统以在沉积期间防止形成缺陷的制造薄膜太阳能电池的产品和方法。
背景技术
可更新能量的益处尚未完全反映到市场价格中。虽然例如光电(PV)电池的替代能源提供清洁、可靠且可更新的能量,但高生产成本和生产可靠性的缺乏使得这些装置无法成为可实施的商业产品。随着对能量的需求的增长,全世界对提供能源的替代品的需求也随之增加。
虽然可在实验室里制造相对高效的薄膜PV电池,但已证明,难以将所述工艺发展成具有对于商业生存而言至关重要的重复能力和效率的商业规模制造工艺。此外,与制造相关联的成本是阻止薄膜太阳能电池更广泛地被商业化的重要因素。由于缺乏高效的薄膜制造工艺,使得PV电池无法有效地取代市场上的其它能量源。
可根据不同的设计来制造薄膜PV电池。在薄膜PV电池中,将PV材料的薄型半导体层沉积在例如玻璃、金属或塑料薄片的支承层上。由于薄膜材料的光吸收率高于晶体材料,所以以极薄的连续的原子、分子或离子层的形式沉积薄膜PV材料。典型的薄膜PV电池的活性区域仅若干微米厚。基本的光电堆叠设计示范了PV电池的典型结构。在所述设计中,薄膜太阳能电池包括衬底、阻挡层、背部接触层、混合类型半导体源层、吸收体层、n型结缓冲层、本征透明氧化层和导电透明氧化层。铜铟镓二硒(CIGS)化合物最适合用于薄膜电池的吸收体层中,且归入铜铟硒类(称为CIS材料)的分类。通常通过基于真空的技术来沉积CIGS薄膜。
薄膜制造过程因沉积过程中出现的产品缺陷而遭受较低的良率。具体地说,这些缺陷是因在处理和材料处置期间发生的污染以及玻璃、金属或塑料衬底的断裂导致的。因此,此项技术需要一种既能在处理期间限制潜在的污染同时又将衬底断裂的可能性最小化的薄膜太阳能电池制造过程。
目前,使用多步骤批处理来制造电池,其中在各反应步骤之间转移每一产品零件。此类转移较为繁重而且需要在室内循环进行反应。典型的过程由一系列个别的批处理室组成,每一处理室特别针对电池中各层的形成而设计。问题在于,衬底被数次从真空转移到空气中再传回真空。这种真空破坏可能会导致产品受到污染。因此,此项技术中需要一种将真空破坏的可能性最小化的工艺。
虽然替代的系统使用一系列个别的批处理室,其与用于每一室的卷式连续过程耦合,但系统的非连续性以及需要破坏真空仍然是主要缺点。此外,卷式过程可能会向衬底施加弯曲应力,从而导致破裂和断裂。这类缺陷使层的粘结性折衷,且可能导致零良率。
需要高温沉积过程也导致PV电池生产的低良率。所有目前已知的柔性聚酰亚胺或其它聚合物衬底材料一般都不能经受高温。
举例来说,由Hollars在2004年4月1日公开的美国专利申请案2004/0063320揭示了一种用于使用卷式系统连续生产光电堆叠的一般方法。如上所述,这一过程要求向衬底施加弯曲应力。这一应力可能会导致破裂和断裂。破裂或断裂会削弱高质量的堆叠结构,并降低制造良率。因此,为了成为商业上可实施的过程,所揭示的系统需要用于生产堆叠的柔性衬底。然而,目前已知的柔性聚合物材料均无法承受高温沉积过程。因此,此项技术中需要一种不会在衬底上施加弯曲应力的工艺,其中衬底可承受高温沉积过程。因此,需要一种用于有效地制造PV工件并且能够进行大规模生产的工艺。
发明内容
本发明提供一种通过以下方式生产的光电装置:将基于托盘的衬底提供到一系列反应室,在所述反应室中可循序地在所述托盘上形成阻挡层、背部接触层、一个或一个以上半导体层、碱性材料、n型结缓冲层、本征透明氧化层、透明的导电氧化层以及顶部金属栅格。
进一步揭示一种用于通过使用一串装载有工件的基于托盘的固持装置连续地形成光电装置的方法。在此实施例中,使一系列托盘以界定速率通过具有多个处理区域的反应器,其中每一区域用于装置制造的一个生产步骤阶段。
这些生产步骤可包含:用于制备衬底的装载或隔离区域;用于沉积阻挡层、背部接触层、一个或一个以上半导体层和碱性材料的环境;用于对上述层中的一者或一者以上进行热处理的环境;用于沉积n型化合物半导体层(其中这一层充当结缓冲层)、本征透明氧化层和导电的透明氧化层的环境。在进一步的实施例中,所述过程可经调整而包括更多或更少的区域,以便制造具有更多或更少层的薄膜太阳能电池。
可使用托盘型系统,其中将多个工件固持为托盘并使多个托盘通过连续的反应器步骤设备进行处理。这一基于托盘的系统允许对较小工件进行连续处理和替代的材料处置步骤,例如在中间或最终步骤中进行托盘堆叠。
附图说明
图1展示通过本发明的生产技术生产的薄膜太阳能电池的实施例。
图2示意性代表用于形成太阳能电池的反应器。
图3展示一装置上的多个工件衬底,所述装置能够将衬底附着到载体上,所述载体还具有允许使零件以精确方式前进并通过生产设备的构件。
图4说明通过根据本发明的过程从左向右馈送衬底的一个实施例。
图5A展示处理方法的实施例,其中通过根据本发明的循序的溅镀-蒸镀来同时馈送和处理两个衬底。
图5B展示处理方法的实施例的俯视图,其中通过循序的溅镀-蒸镀/溅镀-蒸镀过程同时馈送和处理两个衬底。
图6说明根据本发明的过程的另一实施例,其中各区域进一步包括一个或一个以上子区域。
图7展示本发明使用的板上组装有多个衬底工件的托盘的示意图。
图8展示用来在受控制的环境中堆叠多个衬底的盒的示意图。
图9展示使用盒系统以允许非连续性光电产品制造过程的示意性生产技术。
具体实施方式
一般的光电堆叠设计
本发明使用新的生产设备来生产光电装置。当然,特定设备将取决于具体的光电装置的设计,所述设计可以不同。然而,基本前提是每个光电装置具有光电装置或薄膜太阳能电池100,其包括衬底105、阻挡层110、背部接触层120、半导体层130、碱性材料140、另一半导体层150、n型结缓冲层160、本征透明氧化层170和透明导电氧化层180。根据本发明,所述层的堆叠将被制造在排列在图7所示的托盘700上的多个衬底上。个别衬底零件710将排列在托盘上,通过夹具构件来固定。
一般的设备配置
本发明的第一实施例是用于制造光电装置的设备,其包括用于将固持多个衬底零件的多个托盘依次提供到多个反应区域。这些反应区域至少包含能够提供用于沉积半导体层的环境的区域,和能够提供用于沉积前体p型吸收体层的环境的区域。
图7展示托盘的示意俯视图。托盘提供用于多个小型PV工件衬底710或用于将工作衬底以预定方式固定地附接到托盘的固持基座700,以使得各工件以精确且可控制的方式呈现在每个处理室中。托盘本身经设计以便可精确地确定托盘的位置。托盘还具有用于允许附接到驱动构件以使托盘前进并通过处理室的构件。托盘主体的材料经选择以使其在热学方面稳定,并且不会与反应或沉积室中使用的处理或沉积材料相互作用。
夹持构件
此外,用于将工件固定到托盘的构件是可释放的。在有些实例中,用于附着工件的构件是磁性的,原因在于工件衬底本身是铁磁性的,或者其具有将各零件固持到托盘主体的覆层。可使用遮罩来固持每个零件,其中存在一框架和多个方框,其允许通过所述方框在工件衬底上进行沉积。
图4展示随着使多个托盘通过用来沉积光电装置的多个所要层的一系列处理室420、430而进行处理,通过装载好的含有多个托盘440(再次参看图8)的盒来馈送一串反应/沉积室,且在沉积和处理完所要的层之后,将完成后的工件收集在盒450中并进行储藏以用于进一步的处理或制造步骤(再次参看图9)。
在替代方法中,开始的零件盒440馈送一系统,所述系统可能提供衬底的表面处理、结层的沉积、含碱半导体源层的沉积、p型吸收体层的沉积,和接下来结与n型层以及缓冲层的形成,以便可从受到控制的反应串和存货中取出被加工的零件以供进一步处理。
薄膜制造方法
本发明的一种形式提供一种用于制造光电装置的方法,其包括以下步骤:将能够固持衬底的托盘依次提供到多个反应器区域,其中多个区域包含至少一个沉积前体p型吸收体层的区域。
在另一形式中,本发明提供一种用于制造光电电池的方法,其包括以下步骤:提供附着到托盘载体构件的多个衬底零件,在所述多个衬底零件的表面上沉积导电薄膜(其中所述导电薄膜包含由导电材料构成的多个离散层)、在导电薄膜上沉积至少一个p型吸收体层(其中所述p型半导体吸收体层包含基于金属的合金材料,例如铜、铟、镓以及可能为硒或硫的合金),和在p型半导体层上沉积n型半导体层,从而形成p-n结。
提供:一系列处理室,其中每一室提供特定的处理环境;以及用于将指定的材料沉积到正被处理的工件的加工表面或界面上以便产生特定层沉积或层处理的构件。这些处理室中的每一者均允许一构件将待传输的工件(在被制造成光电装置的托盘上有标记)从第一经设计的室传输通过连续的多个室,直到工件已制造成经设计的光电堆叠为止。
这多个具备传输机构的反应或处理室还可包含一个或一个以上隔离室,所述隔离室确保将有效的反应物保存在具体需要的室中且不会污染下游过程。这一隔离系统在形成光电装置的半导体层的过程中特别重要,其中相对少量的材料确定层是p型还是n型半导体。此载体可配置有参考构件,以确保将工件定位在生产设备内的规定位置处。
图3展示装置上的多个工件衬底310,所述装置能够将衬底附着到载体320上,且还具有允许使零件以精确方式前进通过生产设备的构件。这些托盘大体上是平坦的,且具有用于将多个工件固持在托盘表面上以将每一工件表面呈现给沉积源或处理源的构件。
一般的光电堆叠设计
本发明使用一种新的生产设备来生产光电装置。当然,特定设备将取决于具体的光电装置设计,所述设计可能是不同的。
参看图1,将所有层沉积在衬底105上,所述衬底可包括多种功能材料(例如玻璃、金属、陶瓷或塑料)中的一种。直接沉积在衬底105上的是阻挡层110。阻挡层110包括薄型导体或非常薄的绝缘材料,并且用以阻挡不合需要的元素或化合物从衬底中向外扩散到电池的其余部分。此阻挡层110可包括铬、钛、氧化硅、氮化钛和相关的具有所需导电性和耐用性的材料。接下来沉积的层是背部接触层120,其包括非反应性金属,例如钼。下一层沉积在背部接触层120上,且为p型半导体层130,以便改进吸收体层与背部接触层之间的粘附性。P型半导体层130可为I-IIIa,b-VI同型半导体,但优选的成份为Cu:Ga:Se、Cu:AI:Se或Cu.Tn:Se与前述化合物中的任一者的合金。
在此实施例中,p型吸收体层的形成包含多个离散层的相互扩散。最终如图1所示,p型半导体层130与150组合成单个的复合层155,其充当太阳能的主要吸收体。然而,在此实施例中,添加碱性材料140以便为后续层的生长播种,并增加吸收体层155的载流子浓度和晶粒大小,因而提高太阳能电池的转换效率。接着,将所述层在约400℃-600℃的温度下进行热处理。
在热处理之后,通过沉积n型结缓冲层160来继续进行光电生产过程。这一层160将最终与吸收体层155相互作用,以形成必要的p-n结165。接下来沉积透明的本征氧化层170,以充当具有CIGS吸收体的异质结。最后,沉积导电的透明氧化层180,以充当电池电极的顶部。这最后一层是导电的,且可将电流载运到栅格载体,所述栅格载体允许带走所产生的电流。
替代性的基于托盘的制造方案
图2示意性表示用于形成太阳能电池的反应器200。衬底205从左到右馈送并穿过反应器。反应器200包含一个或一个以上处理区域,其在图2中表示为220、230、240和250,其中每个处理区域均包括用于在衬底205上沉积材料的环境。所述区域以机械方式或可操作地在反应器200内彼此连接。如本文所使用,术语“环境”是指当衬底205位于特定区域中时用于在衬底205上沉积或反应材料层或材料混合物的条件曲线。
根据太阳能电池中正被处理的层来配置每个区域。举例来说,一区域可经配置以执行溅镀操作,其中包含加热源和一个或一个以上源目标。
优选的情况是,以可控制的速率使伸长的衬底205通过各种处理区域。还预期衬底205可具有0.5米/分钟到约2米/分钟的转换速度。因此,优选考虑到所需的传输速度、材料接近特定源材料的滞留时间,使每个区域内部的过程经调谐以形成所需的横截面。因此,可考虑到由传输或转换速度确定的堆叠的滞留时间而选择每个过程的特征(例如材料和过程选择、温度、压力或溅镀传递速率等),以确保以适当方式传递组成材料。
根据本发明,可将衬底205以“图片帧”类型装配以放在托盘上的方式连续传输穿过过程,以便转位并传输通过过程,图3中说明了后一种方式。参看图3,将一个衬底或一组衬底310安装在托盘320上,所述托盘320转换通过轨道350上的一个或一个以上区域330和340。在替代实施例中,所述过程可进一步包括第二衬底或第二组衬底,其放置成与衬底310成背对背的配置。
预期各种区域内的背景压力范围将从10-6托到10-3托。可通过添加例如氩气、氮气或氧气等纯净气体来实现高于基准真空(10-6托)的压力。优选的情况是,速率R是常数,以使得衬底205不停止地穿过反应器200从入口行进到出口。所属领域的技术人员将了解,可因此以连续方式在衬底205上形成太阳能电池堆叠,而无需衬底205在反应器200中停止。
图2中的反应器可进一步包括真空隔离子区域或狭缝阀(slit valve),其经配置以隔离相邻的处理区域。提供真空隔离子区域或狭缝阀以便在不同的压力环境之间连续传输衬底。
图2中的反应器是多个N处理区域220、230、240和250。然而,所属领域的技术人员应了解,反应器可包括区域220、230、240、250……N区域。装载/卸载区域210/211包括可与反应器的其余部分隔离且可向大气开放的区域。
图2中展示的反应器是多个N处理区域220、230、240和250。然而,所属领域的技术人员应了解,反应器可包括区域220、230、240、250……N个区域。装载/卸载区域210/211包括可与反应器的其余部分隔离且可对空气开放的区域。
在优选实施例中,所述过程可进一步包括衬底206,其与衬底205背对背地行进。在此实施例中,衬底206和205以背对背的配置定向,且经过区域220、230、240和250,所述区域执行相同的处理操作222/221、232/231、242/241和252/251。
图5A展示反应器500的一部分的俯视图说明,所述反应器500以背对背方式处理衬底501和502,且还说明由区域511隔离的循序性溅镀-蒸镀过程。为了实现背对背处理,将衬底501的加热源503镜射为衬底502的加热源507。同样,将衬底501的溅镀源504、加热源505和蒸镀源506镜射为衬底502的溅镀源508、加热源509和蒸镀源510。
图5B展示反应器512的一部分的俯视图说明,所述反应器512用循序溅镀-蒸镀/溅镀-蒸镀过程以背对背方式处理衬底521与522。如图5A中所示,将衬底521的溅镀源534镜射为衬底522的溅镀源528。同样,将衬底521的加热源523和526、蒸镀源524和527以及溅镀源525镜射为衬底522的加热源529和532、蒸镀源530和533以及溅镀源531。因此,通过热量和材料源的简单重复,可在相同的机器内将太阳能电池的产量有效地翻倍。
具体处理步骤
当然,用于生产特定PV物件的方法步骤取决于所述物件的具体设计。基于CIGS的PV将具有与基于硅的系统不同的生产方法。本发明并不局限于一种PV类型,且一般而言,可用本发明的技术制造任何PV。
在CIGS的情况下,具体步骤可包含:将基于托盘的衬底装载通过隔离的装载区域或类似单元210。在各实施例中,反应器200内含有隔离区域210。或者,可将隔离区域210附接到反应器200的外部部分。第一处理区域210可进一步包括衬底制备环境,以去除表面的原子级的任何残余瑕疵。衬底制备可包含:离子束、沉积、加热或溅镀蚀刻。这些方法是此项技术中已知的,且将不再进一步论述。
第二处理区域可为用来沉积用于衬底杂质隔离的阻挡层的环境,其中阻挡层在衬底与后续层之间提供导电路径。在优选实施例中,阻挡层包括溅镀过程传递的例如铬或钛等元素。优选情况是,所述环境包括环境温度下在约10-3托到约10-2托范围内的压力。
先前区域下游的第三处理区域包括用于沉积用作背部接触层的金属层的环境。背部接触层包括为电流提供导电路径的厚度。此外,背部接触层用作太阳能电池堆叠的第一导电层。所述层可进一步用来防止例如杂质等化学化合物从衬底扩散到太阳能电池结构的其余部分,或者用作衬底层与太阳能电池结构的其余部分之间的热膨胀缓冲物。优选情况是,背部接触层包括钼,然而,背部接触层可包括其它导电金属,例如铝、铜或银。
第四区域提供用于沉积p型半导体层的环境。如本文所使用,此层可用作吸收体生长的外延模板。优选情况是,p型半导体层为同型I-IIIVI2材料,其中此材料的光带间隙高于p型吸收体层的平均光带间隙。举例来说,半导体层可包括Cu:Ga:Se、Cu:Al:Se,或Cu:Tn:Se与前述化合物中的任一者的合金。优选情况是,可在10-6到10-2托的背景压力下在从环境温度直到约300℃的温度下通过溅镀过程传递所述材料。更优选的情况是,温度范围为从环境温度到约200℃。
先前区域下游的第五区域提供用于沉积碱性材料以增强p型吸收体的生长和电力性能的环境。优选情况是,在环境温度下且在约10-6托到10-2托的压力范围下溅镀碱性材料。优选情况是,所述材料包括NaF、Na2Se、Na2S或KCI等化合物,其中厚度范围为从约150nm到约500nm。
也在先前区域下游的第六区域可包括用于沉积包括p性吸收体前体材料的另一半导体层的环境。在优选实施例中,第六区域可进一步包括一个或一个以上用于沉积前体材料的子区域。在一个实施例中,半导体层通过以下方式形成:首先在一个或一个以上连续子区域中传递前体材料,然后在下游热处理区域中将前体材料反应成为最终p型吸收体。因此,特别是对于CIGS系统而言,在层的格式中,可存在两个材料沉积步骤和第三热处理步骤。
在前体传递区域中,以多种方式沉积前体材料层,其中包含蒸镀、溅镀和化学气相沉积或其组合。优选情况是,可在从约200℃-300℃的温度范围下传递前体材料。需要使前体材料反应以尽可能快速地形成p型吸收体。如前所述,为此目的,可将前体层形成为薄层的混合物或形成为一系列薄层。
制造装置也可具有先前处理区域下游的第七处理区域,其用于对一个或一个以上先前层进行热处理。术语“多元物”包含二元物、三元物等。优选情况是,热处理使得先前不反应的元素或多元物发生反应。举例来说,在一个实施例中,优选具有呈各种组合形式且具有元素的多元化合物的各种比率的铜、铟、硒和镓作为沉积在工件上的来源。反应环境包含成不同比例的硒和硫,且温度范围为从约400℃到约600℃,具有或不具有背景惰性气体环境。在各种实施例中,可通过优化前体的混合方式来将处理时间最小化到一分钟或更少。环境内的最佳压力取决于环境是反应性的还是惰性的。根据本发明,在热处理区域内,压力范围为从约10-5到约10-2托。然而,应注意,这些范围在很大程度上取决于作为整体的阶段的反应器设计、光电装置的设计者以及设备的操作变量。
反应器可具有用于形成n型半导体层或结伴体的第八处理区域。结缓冲层从II-VI或IIIX VI族中选出。举例来说,结缓冲层可包括通过蒸镀、升华或化学气相沉积方法沉积的ZnO、ZnSe、ZnS、In、Se或InNS。温度范围为从约200℃到约400℃。
此外,所述过程还可具有第九区域,其具有用于沉积透明氧化物(例如ZnO)的本征层的环境。根据本发明,所述本征透明氧化层可通过多种方法沉积,其中包含(例如)RF溅镀、CVD或MOCVD。
在各实施例中,所述过程进一步具有第十区域,其具有用于沉积透明导电氧化层以用作太阳能电池的顶部电极的环境。在一个实施例中,举例来说,以溅镀方式沉积掺杂有铝的ZnO。优选情况是,所述环境包括约200℃的温度和约5毫托的压力。或者,可使用ITO(氧化铟锡)或类似物。
如上所述,在一个实施例中,反应器可包括离散的区域,其中每个区域对应于光电装置的一层的形成。然而,在优选实施例中,可组合包括类似成份和/或环境条件的区域,因此减少反应器中的区域的总数。
举例来说,在图6中,区域610包括子区域611和612,区域615包括子区域616和617,且区域620包括一个区域,其中每个区域和子区域包括预定的环境。在此实例中,可在子区域611中沉积材料A,且可在子区域612中沉积不同的材料B,其中材料A下游的子区域612的环境不同于子区域611中的环境。因此,衬底605当在相同区域610的不同区域中时可经历不同的温度或其它过程曲线。根据此实施例,区域可界定为具有预定压力,且区域可包含一个或一个以上区域、子区域或其中的阶段,其中每个子区域经配置以在相同的压力环境内使所要材料沉积或反应。
接着,可将衬底605传递到室615,其中在子区域616内沉积材料C,且在子区域617内沉积材料D。最终,衬底605到达区域620,在其中沉积单个材料E。
所属领域的技术人员将了解,反应器600可如所述般具有沿着衬底的转换所界定的路径安置在反应器的入口与出口之间的一系列区域。在每个区域内,可提供一个或一个以上组成环境或子区域,以使选定的靶材沉积或反应,从而形成用于形成太阳能电池堆叠的连续过程。一旦衬底进入反应器,太阳能堆叠的各层便以循序方式沉积和形成,其中连续的每个下游过程用于形成太阳能电池堆叠,直到在反应器的出口处提供完成的薄膜太阳能电池为止。
虽然依据基于CIGS的光电堆叠设计表述了本项技术,但应当了解,也可使用此项技术来生产其它光电设计,其中包含生产基于硅的系统,例如现有技术中论述的系统。举例来说,将可能在氢化的非晶硅合金中使用或包含碳或锗原子,以便调整其光学带隙。举例来说,碳的带隙大于硅,且因此在氢化的非晶硅合金中包含碳会增大合金的带隙。相反,锗的带隙小于硅,且因此在氢化的非晶硅合金中包含锗会减小合金的带隙。
类似地,可在氢化的非晶硅合金中并入硼或磷原子,以便调整其导电特性。在氢化的非晶硅合金中包含硼会形成正性掺杂的导电区域。相反,在氢化的非晶硅合金中包含磷会形成负性掺杂的导电区域。
通过在沉积室中进行沉积来制备氢化的非晶硅合金薄膜。至此,在通过在沉积室中进行沉积来制备氢化的非晶硅合金的过程中,通过在沉积气体混合物中包含含有碳、锗、硼或磷的气体(例如甲烷(CH4)、锗烷(GeH4)、四氟化锗(GeF4)、高价锗烷,例如乙锗烷(Ge2H6)、乙硼烷(B2H6)或磷化氢(PH3))来在合金中并入碳、锗、硼或磷。参看(例如)第4,491,626号、第4,142,195号、第4,363,828号、第4,504,518号、第4,344,984号、第4,435,445号和第4,394,400号美国专利。然而,此项实践的缺点在于,无法控制将碳、锗、硼或磷原子并入氢化的非晶硅合金的方式。也就是说,这些元素以高度随机的方式并入所得合金中,从而增加了不合需要的化学键的可能性。
因此,在制造PV装置且需要用特定的且受控的反应和/或沉积条件来生产PV薄膜时,本发明的技术将是有用的。
Claims (50)
1.一种用于制造光电装置的设备,其包括用于将固持多个衬底零件的多个托盘依次提供到多个反应区域的构件,所述多个反应区域至少包含:
能够提供用于沉积半导体层的环境的区域;和能够提供用于沉积p型吸收体层的环境的区域。
2.根据权利要求1所述的用于制造光电装置的设备,其进一步包括用于将衬底依次提供到多个反应器区域以便制备所述衬底的构件。
3.根据权利要求1所述的用于制造光电装置的设备,其进一步包括第一处理区域,所述第一处理区域能够提供用于将所述衬底从周围环境转换到处理环境的环境。
4.根据权利要求3所述的设备,其中所述衬底部分地或整体地从大气压力转换到与后续处理环境相符的降低的压力。
5.根据权利要求1所述的用于制造光电装置的设备,其进一步包括能够提供用于沉积阻挡层的环境的处理区域。
6.根据权利要求5所述的设备,其中所述阻挡层包括薄型导体或非常薄的绝缘材料。
7.根据权利要求1所述的用于制造光电装置的设备,其进一步包括能够提供用于沉积导电背部接触层的环境的处理区域。
8.根据权利要求7所述的设备,其中导电背部接触层的沉积包括金属层。
9.根据权利要求8所述的设备,其中所述金属层包括从由钼、钛、钽或其它可接受的金属或合金组成的群组中选出的导电金属。
10.根据权利要求9所述的设备,其中所述金属层为钼。
11.根据权利要求1所述的用于制造光电装置的设备,其进一步包括能够提供用于沉积碱性材料的环境的处理区域。
12.根据权利要求11所述的设备,其中所述碱性材料为Na-VII或Na2-VII。
13.根据权利要求1所述的用于制造光电装置的设备,其进一步包括能够提供用于沉积半导体层的环境的处理区域。
14.根据权利要求13所述的设备,其中所述半导体层包括I、III、VI族元素。
15.根据权利要求14所述的设备,其中所述半导体层包括CuGaSe2、CuAlSe2或CuInSe2与所述I、III、VI元素中的一者或一者以上的合金。
16.根据权利要求15所述的设备,其中所述半导体层包括CuGaSe2。
17.根据权利要求1所述的用于制造光电装置的设备,其进一步包括能够提供用于沉积半导体层的环境的处理区域,其中所述层包括前体材料。
18.根据权利要求17所述的设备,其中所述前体材料包括I、III、VI族元素。
19.根据权利要求18所述的设备,其中所述前体材料包括I-(IIIa、IIIb)-VI2层。
20.根据权利要求19所述的设备,其中所述前体材料包括I-(IIIa、IIIb)-VI2层的元素中的一者或一者以上,其中0.0<IIIb/(IIIa+IIIb)<0.4。
21.根据权利要求19所述的设备,其中所述前体材料包括I-(IIIa、IIIb)-VI2层的合金中的一者或一者以上,其中0.0<IIIb/(IIIa+IIIb)<0.4。
22.根据权利要求19所述的设备,其中所述半导体层包括CIGS吸收体层,其包括In1-x:Gax:Se2,其中x的范围在0.2到0.3之间,其中厚度范围从约1μm到约3μm。
23.根据权利要求22所述的设备,其中所述CIGS吸收体层是通过传递I、III和VI型前体金属而形成,其中将Cu、In1-x、Gax和Se2层循序沉积在所述衬底上。
24.根据权利要求22所述的设备,其中所述CIGS吸收体层是通过传递I、III和VI型前体金属而形成,其中将Cu、In1-x、Gax和Se2层循序沉积在所述衬底上,且接着通过热处理将其合成为合金混合物。
25.根据权利要求22所述的设备,其中所述CIGS吸收体层是通过传递I、III和VI型前体金属而形成,其中单独合成Cu:Gax层,且接着将其与Inx-1层和Se2层共同沉积在衬底上。
26.根据权利要求22所述的设备,其中所述CIGS吸收体层是通过传递I、III和VI型前体金属而形成,其中单独合成Cu:Gax层,且接着将其与In1-x层和Se2层共同沉积在衬底上,且接着通过热处理将其合成为合金混合物。
27.根据权利要求22所述的设备,其中所述CIGS吸收体层是通过传递I、III和VI型前体金属而形成,其中单独合成Cu:Gax:Inx-1层,且接着将其与Se2层共同沉积在衬底上。
28.根据权利要求22所述的设备,其中所述CIGS吸收体层是通过传递I、III和VI型前体金属而形成,其中单独合成Cu:Gax:Inx-1层,且接着将其与Se2层共同沉积在衬底上,且接着通过热处理将其合成为合金混合物。
29.根据权利要求1所述的用于制造光电装置的设备,其进一步包括能够提供用于对一个或一个以上层进行热处理的环境的处理区域。
30.根据权利要求29所述的设备,其中所述处理发生在从10-6托直到大气压力的压力范围和300℃到700℃的温度范围中。
31.根据权利要求1所述的用于制造光电装置的设备,其进一步包括能够提供用于沉积n型半导体层的环境的处理区域。
32.根据权利要求31所述的设备,其中所述n型半导体层是离散的。
33.根据权利要求32所述的设备,其中所述离散层包括II-VI、III-VI族元素中的一者或一者以上。
34.根据权利要求32所述的设备,其中所述离散层材料包括从以下群组中选出的一者或一者以上:(In,Ga)y(Se,S,O)和(Zn,Cd)(Se,S,O)。
35.根据权利要求32所述的设备,其中所述离散层材料包括从由(In,Ga)2Se3、(In,Ga)2S3、ZnSe、ZnS和ZnO组成的群组中选出的材料中的一者或一者以上。
36.根据权利要求32所述的设备,其中所述n型半导体层是通过将掺杂剂物质扩散到所述p型吸收体层中而形成。
37.根据权利要求36所述的设备,其中所述掺杂剂物质是从由一个或一个以上II或III族元素组成的群组中选出。
38.根据权利要求37所述的设备,其中所述掺杂剂物质包括Zn或Cd。
39.根据权利要求1所述的用于制造光电装置的设备,其进一步包括能够提供用于沉积绝缘透明氧化层的环境的处理区域。
40.根据权利要求39所述的设备,其中所述绝缘透明氧化层包括II-VI或II-IV-VI族中的一个或一个以上材料。
41.根据权利要求39所述的设备,其中所述绝缘透明氧化层包括ZnO或ITO中的一个或一个以上材料。
42.根据权利要求1所述的用于制造光电装置的设备,其进一步包括能够提供用于沉积导电透明层的环境的处理区域。
43.根据权利要求42所述的设备,其中所述导电透明层包括II-VI或II-IV-VI族中的一个或一个以上材料。
44.根据权利要求42所述的设备,其中所述导电透明层包括ZnO、Cd2SnO4或ITO中的一个或一个以上材料。
45.根据权利要求1所述的用于制造光电装置的设备,其进一步包括第一处理区域,所述第一处理区域能够提供用于将所述衬底从所述处理环境转换回到所述周围环境的环境。
46.根据权利要求45所述的设备,其中所述衬底部分地或整体地从大气压力转换到与后续处理环境相符的降低的压力。
47.一种用于制造光电装置的方法,其包括将能够固持衬底的托盘依次提供到多个反应器区域,其中所述多个区域包含至少一个能够提供用于沉积p型吸收体层的环境的区域。
48.一种用于制造光电电池的方法,其包括:
a.提供附着到托盘载体构件的多个衬底零件;
b.将导电薄膜沉积在所述多个衬底零件的表面上;
c.其中所述导电薄膜包含由导电材料形成的多个离散层;
d.将至少一个p型半导体层沉积在所述导电薄膜上,其中所述p型半导体层包含基于铜铟二硒的合金材料;
e.将n型半导体层沉积在所述p型吸收体层上,从而形成p-n结。
49.一种用于生产光电装置的托盘系统,其包括:
a.具有第一侧和第二侧的托盘基底,其中所述托盘基底的所述第一侧上安置有多个有规则安置的目标区域;其中所述多个安置的目标区域中的每一者均具有用于以可移除方式固定加工衬底的构件;
b.安置在所述托盘基底上的转位构件,其允许控制所述托盘基底的定位;
c.固定构件为磁性构件;
d.磁性构件具有均匀地安置在所述指定的目标区域上的热存储容量;
e.加工衬底为例如不锈钢的磁性材料;
f.可固定构件是机械式。
50.一种用于生产光电装置的托盘系统,其包括:
a.具有第一侧和第二侧的托盘基底,其中所述第一侧具有多个安置在所述托盘基底的所述第一侧上的有规则安置的目标区域;
b.安置在所述托盘基底的所述第二侧上的多个有规则安置的目标区域;其中所述多个安置的目标区域中的每一者均具有用于以可移除方式固定加工衬底的构件;
c.安置在所述托盘基底上的转位构件,其允许控制所述托盘基底的定位。
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CNA2005800433859A Pending CN101080511A (zh) | 2004-11-10 | 2005-11-10 | 用于使用连续过程形成薄膜太阳能电池的方法和设备 |
CNA2005800444444A Pending CN101087899A (zh) | 2004-11-10 | 2005-11-10 | 光电装置的垂直生产 |
CNA2005800451823A Pending CN101443929A (zh) | 2004-11-10 | 2005-11-10 | 使用含碱层的过程和光电装置 |
CNA200580045415XA Pending CN101094726A (zh) | 2004-11-10 | 2005-11-10 | 用于以cigs建立原位结层的热方法 |
CNA2005800433914A Pending CN101233260A (zh) | 2004-11-10 | 2005-11-10 | 光伏衬底沉积中的压力控制系统 |
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CNA2005800444444A Pending CN101087899A (zh) | 2004-11-10 | 2005-11-10 | 光电装置的垂直生产 |
CNA2005800451823A Pending CN101443929A (zh) | 2004-11-10 | 2005-11-10 | 使用含碱层的过程和光电装置 |
CNA200580045415XA Pending CN101094726A (zh) | 2004-11-10 | 2005-11-10 | 用于以cigs建立原位结层的热方法 |
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- 2005-11-10 CA CA002586965A patent/CA2586965A1/en not_active Abandoned
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- 2005-11-10 WO PCT/US2005/040744 patent/WO2006053129A2/en active Application Filing
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- 2005-11-10 US US11/272,386 patent/US7319190B2/en not_active Expired - Fee Related
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CN102668101A (zh) * | 2009-11-25 | 2012-09-12 | 英诺瓦莱特公司 | 使用一组硅纳米颗粒流体以原位控制一组掺杂剂扩散分布的方法 |
CN103022243A (zh) * | 2011-09-27 | 2013-04-03 | 绿阳光电股份有限公司 | 薄膜太阳能电池制造系统 |
Also Published As
Publication number | Publication date |
---|---|
US20060096635A1 (en) | 2006-05-11 |
WO2006053129A3 (en) | 2007-02-15 |
EP1809786A2 (en) | 2007-07-25 |
TW200637022A (en) | 2006-10-16 |
TW200634170A (en) | 2006-10-01 |
CN101080511A (zh) | 2007-11-28 |
WO2006053128A3 (en) | 2008-10-02 |
CA2586966A1 (en) | 2006-05-18 |
CN101443929A (zh) | 2009-05-27 |
CN101233260A (zh) | 2008-07-30 |
US20060102230A1 (en) | 2006-05-18 |
JP2008520103A (ja) | 2008-06-12 |
WO2006053129A2 (en) | 2006-05-18 |
CN101094726A (zh) | 2007-12-26 |
CA2586965A1 (en) | 2006-05-18 |
TW200633241A (en) | 2006-09-16 |
JP2008538450A (ja) | 2008-10-23 |
WO2006053128A2 (en) | 2006-05-18 |
TW200633240A (en) | 2006-09-16 |
WO2006053128A8 (en) | 2007-12-21 |
TW200635090A (en) | 2006-10-01 |
TW200703672A (en) | 2007-01-16 |
US7319190B2 (en) | 2008-01-15 |
EP1810344A2 (en) | 2007-07-25 |
CN101087899A (zh) | 2007-12-12 |
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