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Publication numberCN101369579 B
Publication typeGrant
Application numberCN 200810213232
Publication date4 May 2011
Filing date2 Oct 1996
Priority date3 Oct 1995
Also published asCN1145839C, CN1165568A, CN1221843C, CN1388404A, CN1624551A, CN1881062A, CN1881062B, CN100414411C, CN101369579A, CN103956361A, US5930607, US20030207506, US20050082541, US20050084999, US20050104071, US20050233509, USRE38292, USRE44267, WO1997013177A1
Publication number200810213232.X, CN 101369579 B, CN 101369579B, CN 200810213232, CN-B-101369579, CN101369579 B, CN101369579B, CN200810213232, CN200810213232.X
Inventors佐藤尚
Applicant精工爱普生株式会社
Export CitationBiBTeX, EndNote, RefMan
External Links: SIPO, Espacenet
Method for manufacturing active matrix substrate and film element
CN 101369579 B
Abstract
An active matrix substrate includes a thin-film transistor (TFT) and a pixel part of a pixel electrode connected to one end of the thin-film transistor, and is characterized in that an apparatus for preventing electrostatic destroy by the thin-film transistor and locating between at least a line or a position equivalent with the line of the scanning lines and the signals, and a common electric potential line, is provided; the apparatus includes a diode included in the thin-film transistor formed by overlapping a grid electrode layer, a grid insulated layer, a channel layer, a source electrodelayer, a drain electrode layer, and a protective layer, for connecting the grid electrode layer and the source, drain electrode layers; a first opening is formed in a same manufacturing procedure forelectrically connecting the grid electrode layer and the source, drain electrode layers, and selectively removing the grid insulated film and the protective film on the grid electrode layer; a secondopening is formed for selectively removing the protective film on the source, drain electrode layers.
Claims(46)  translated from Chinese
1. 一种有源矩阵基板,包括:开关元件,配制成与扫描线和信号线的交叉点一致,且象素电极配制成与开关元件一致;防止静电破坏用元件,利用建立在上述扫描线和上述信号线的至少一个之间的薄膜晶体管,或与上述扫描线和上述信号线中至少一个在电气上等价的区,和公共电气保护区,上述防止静电破坏用元件包含二极管,其中薄膜晶体管中的栅极电极层、源极电极层和漏极电极层互相连接;和第1开口,通过选择性地除去上述栅极电极层上的绝缘膜形成,第2开口,通过选择性地除去上述源极电极层和漏极电极层上的绝缘膜形成,其中经由上述第1及第2开口,用和上述象素电极相同材料构成的导电性材料层连接上述栅极电极层、源极电极层和漏极电极层。 An active matrix substrate, comprising: a switching element, be formulated in line with the intersection of scanning lines and signal lines, and pixel electrodes formulated to be consistent with the switching element; element for preventing electrostatic destruction, the use of the scanning line based on and at least one thin film transistor, or between the scanning line and the signal line of at least one electrically equivalent area, electrical protection and public areas of the signal lines, using the above-described electrostatic breakdown preventing element comprises a diode, wherein the thin film transistor gate electrode layer, the source electrode layer and a drain electrode layer connected to each other; and the first opening, removing the insulating film on the gate electrode layer is formed by selectively, the second opening, by selectively removed said source electrode layer and the insulating film is formed on the drain electrode layer, wherein said first and second through openings, and the conductive material layer of the same material of the pixel electrode is connected with the gate electrode layer, a source electrode layer and the drain electrode layer.
2. 一种有源矩阵基板,包括:扫描线;信号线;象素电极;薄膜晶体管连到在配置成矩阵状的扫描线和信号线上,并和象素电极构成象素部分;防止静电破坏用的保护电路,利用建立在上述扫描线和上述信号线的至少一个之间的薄膜晶体管,或与上述扫描线和上述信号线在电气上等价的区,和除扫描线和信号线以外的公共电位线,上述防止静电破坏用的保护电路包含二极管,其中薄膜晶体管中的栅极电极层、源极电极层和漏极电极层互相连接;和第1开口,通过选择性地除去上述栅极电极层上的绝缘层形成,第2开口,通过选择性地除去上述源极电极层和漏极电极层上的绝缘层的同样制造过程形成,经由上述第1及第2开口,用和上述象素电极相同材料构成的导电性材料层电连接上述栅极电极层、源极电极层和漏极电极层。 2. An active matrix substrate, comprising: a scanning line; a thin film transistor is connected to the arranged in a matrix of scanning lines and signal lines, and the pixel electrode and the pixel parts;; signal line; pixel electrodes to prevent static electricity undermine the protection circuit, the use of at least one thin film transistor between the establishment of said scanning line and the signal line or the scanning line and the signal line electrically equivalent to the area, and outside of the scanning lines and signal lines other The common-potential line, said electrostatic breakdown preventing circuit comprises a protection diode in which the thin film transistor gate electrode layer, the source electrode layer and a drain electrode layer connected to each other; and the first opening by selectively removing the gate an insulating layer formed on the electrode layer, the second opening, the same manufacturing process to remove the insulating layer of the source electrode layer and a drain electrode layer are formed by selectively, via the first and second openings, and with the above-described electrically conductive material layer composed of the same material as the pixel electrode connected to the gate electrode layer, the source electrode layer and a drain electrode layer.
3.权利要求2中所述的有源矩阵基板,其特征在于:第一开口通过栅极电极材料层上的第一绝缘膜的重叠膜并通过第一绝缘膜上的第二绝缘膜,且第一开口只通过栅/源极电极层上的第二绝缘膜。 The active matrix substrate as described in claim 2, characterized in that: the first opening by overlapping the film of the first insulating film on the gate electrode material layer and the second insulating film via the first insulating film, and only through the first opening of the second gate insulating film / layer on the source electrode.
4.权利要求2中所述的有源矩阵基板,其特征在于:上述导电性材料层由ITO构成。 The active matrix substrate according to claim 2, wherein: said conductive material layer made of ITO.
5.权利要求2中所述的有源矩阵基板,其特征在于:与上述扫描线和上述信号线中至少一个在电气上等价的区是连接到外部端子的电极, 上述共用电位线是在交流驱动液晶之际供给作为基准的基准电位的线;以及将连接上述外部端子的电极和把连接上述外部端子的电极共同连接起来构成等电位的线。 The active matrix substrate according to claim 2, wherein: the scanning lines and said signal lines in an equivalent area is at least electrically connected to the external terminal electrodes, the common potential line is in AC driving liquid crystal as a reference on the occasion of supplying a reference potential line; and a wire connecting the electrode and the external terminal connected to the external terminal electrodes connected to a common potential constituting the like.
6.权利要求2中所述的有源矩阵基板,其特征在于:上述防止静电破坏用的保护电路设置在用于连接上述外部端子和公共电位的线的电极之间,以及连接上述外部端子和连接的电位线的电极之间。 The active matrix substrate according to claim 2, wherein: said electrodes are used to prevent the wire connection between the external terminal and the common potential, and said external connection terminal and the electrostatic breakdown protection circuit is provided with electrically connected between the equipotential lines.
7.权利要求2中所述的有源矩阵基板,其特征在于:上述防止静电破坏用的保护电路包括双向二极管,公共连接第一二极管的阳极和第二二极管阴极,及公共连接第一二极管阴极和第二二极管阳极。 The active matrix substrate as described in claim 2, characterized in that: said electrostatic breakdown preventing circuit includes a bi-directional protective diode, the commonly connected anode of the first diode and the second diode cathode, and the common connection a first diode cathode and anode of the second diode.
8.权利要求2中所述的有源矩阵基板,其特征在于:电气上等价的区由公共电位线形成。 The active matrix substrate according to claim 2, characterized in that: electrically equivalent region is formed by the common potential line.
9.权利要求2中所述的有源矩阵基板,其特征在于: 公共电位线与多个扫描线和多个信号线电连接。 The active matrix substrate as described in claim 2, characterized in that: the common potential line connected to the plurality of scanning lines and a plurality of signal lines electrically.
10.权利要求2中所述的有源矩阵基板,其特征在于: 公共电位线与面电极电连接。 The active matrix substrate according to claim 2, wherein: the common potential line and electrically connected to the electrode surface.
11.权利要求2中所述的有源矩阵基板,其特征在于:公共电位线包括栅极电极材料布线、源极电极材料布线、和连接在栅极电极材料布线和源极电极材料布线之间的象素电极材料。 The active matrix substrate as described in claim 2, characterized in that: the common potential line comprises between the electrode material in a gate electrode material a gate wiring and the source wiring electrode material of a wiring, the source electrode wiring material, and connecting The pixel electrode material.
12. 一种液晶显示装置,包括:权利要求11所述的有源矩阵基板。 12. A liquid crystal display device, comprising: an active matrix substrate according to claim 11.
13. 一种防止在有源矩阵型液晶显示装置中包含的有源元件的静电破坏的方法,所述方法包括下列步骤:形成包括连接到矩阵状配置的扫描线和信号线的薄膜晶体管,以及连接在该薄膜晶体管一端上的象素电极的象素部分;提供防止静电破坏用的保护电路,该电路包含二极管,二极管具有在薄膜晶体管中与源极电极层和漏极电极层互相连接的栅极电极层;和连接保护电路以防止在至少一个扫描线、信号线、与扫描线和信号线中至少一个在电气上等价的区、和除扫描线和信号线以外的公共电位线之间的静电破坏。 13. A method of preventing in an active matrix type liquid crystal display device comprising the method of the electrostatic destruction of the active elements, said method comprising the steps of: forming comprises a matrix arrangement connected to the scanning lines and signal lines of a thin film transistor, and pixel electrodes connected to the pixel portion on one end of the thin film transistor; provided to prevent electrostatic discharge protection circuit, the circuit comprising a diode, a diode in the thin film transistor having a source electrode layer and a drain electrode layer connected to the gate of each other and connections between the protection circuitry to prevent at least one scan line, signal lines, and the scanning lines and signal lines in at least one electrically equivalent area, and in addition to the scanning lines and signal lines of the common potential line; electrode layer electrostatic damage.
14.权利要求13所述的方法,其特征在于:公共电位线包括栅极电极材料布线、源极电极材料布线、和连接在栅极电极材料布线和源极电极材料布线之间的象素电极材料。 14. The method according to claim 13, wherein: the common potential line comprises a gate electrode material of a wiring, the source electrode wiring material, and the pixel electrode connected between the gate electrode and the source electrode material of a wiring material wirings materials.
15. 一种有源矩阵基板,包括: 扫描线;信号线;薄膜晶体管,配置成与扫描线和信号线的交叉点一致; 象素电极;配置成与薄膜晶体管一致;防止静电破坏用的保护元件,以防止在至少一个扫描线、信号线、和公共电位线之间电连接的静电破坏,所述保护元件至少部分形成象素电极材料层。 15. An active matrix substrate, comprising: a scanning line; signal line; a thin film transistor, arranged in line with the intersection of the scanning lines and the signal lines; pixel electrodes; was aligned with the thin film transistor; prevent electrostatic breakdown protection with member, to prevent electrostatic between at least one scanning line, signal line, and the common potential line connected to the destruction, at least part of the pixel element electrode material layer is formed of the protection.
16.权利要求15中所述的有源矩阵基板,其特征在于:扫描线和信号线的至少一个电连接到电极,以连接外部端子,保护元件电连接在公共电位线和电极之间以连接外部端子。 The active matrix substrate as described in claim 15, characterized in that: the at least one electrical scanning lines and signal lines connected to the electrode, to connect the external terminals, the protection element is electrically connected between the common potential line and the electrode to connect external terminals.
17.权利要求15中所述的有源矩阵基板,其特征在于: 保护元件使用薄膜晶体管。 The active matrix substrate according to claim 17. 15, characterized in that: the protective element using a thin film transistor.
18.权利要求15中所述的有源矩阵基板,其特征在于:用于保护元件的薄膜晶体管的源极电极和漏极电极中的一个经像素电极材料层电连接到扫描线和信号线中的一个。 The active matrix substrate of claim 15, characterized in that: the source electrode element for protecting the thin film transistor and a drain electrode connected to a pixel electrode via the layer of material to the scanning lines and signal lines a.
19.权利要求15中所述的有源矩阵基板,其特征在于:保护元件包括二极管,该二极管形成于将薄膜晶体管电连接在栅极电极和源极电极和漏极电极中的一个之间。 The active matrix substrate of claim 15, characterized in that: the protective element comprises a diode which is formed on the thin film transistor electrically connected between the gate electrode and the source electrode and the drain electrode of a between.
20.权利要求15中所述的有源矩阵基板,其特征在于:用于保护元件的薄膜晶体管的源极电极和漏极电极中的一个经像素电极材料层连接到扫描线和信号线中的一个。 The active matrix substrate according to claim 20. 15, characterized in that: the protective element for the source electrode and the drain electrode of the thin film transistor in a pixel electrode through the material layer is connected to the scanning lines and signal lines a.
21.权利要求15中所述的有源矩阵基板,其特征在于:用于保护元件的薄膜晶体管的栅极电极经像素电极材料层连接到薄膜晶体管的源极电极和漏极电极中的一个。 The active matrix substrate according to claim 21. 15, characterized in that: a gate electrode of a thin film transistor element of the protection material layer via the pixel electrode connected to the source electrode and the drain electrode of the thin film transistor of one.
22.权利要求15中所述的有源矩阵基板,其特征在于:保护元件包括从第一薄膜晶体管的栅极电极和漏极电极的连接形成的第一二极管,和从第二薄膜晶体管的栅极电极和漏极电极的连接形成的第二二极管,第一二极管和第二二极管彼此以相反方向并联连接。 The active matrix substrate according to claim 22. 15, characterized in that: the protective element comprises a first diode connected to the gate electrode of the first thin film transistor and a drain electrode formed, and from the second thin film transistor and a second diode connected to the drain electrode of the gate electrode, a first diode and a second diode connected in parallel to each other in opposite directions.
23.权利要求15中所述的有源矩阵基板,其特征在于: 公共电位线电连接到面电极。 The active matrix substrate according to claim 23. 15, characterized in that: the common potential line is electrically connected to the surface electrode.
24.权利要求15中所述的有源矩阵基板,其特征在于:公共电位线电连接到一个衬底,以便经像素电极材料层连接到面电极。 The active matrix substrate according to claim 24. 15, characterized in that: the common potential line is electrically connected to a substrate, so that by the pixel electrode connected to the surface of the electrode material layer.
25. 一种液晶显示装置,包括:权利要求2所述的有源矩阵基板。 25. A liquid crystal display device, comprising: an active matrix substrate according to claim 2.
26. 一种有源矩阵基板,包括: 扫描线;信号线; 象素电极;电连接到扫描线的第一薄膜晶体管; 除扫描线和信号线以外的导线;防止静电破坏用的保护电路,该保护电路建立在导线和上述扫描线和上述信号线中的至少一个之间,上述保护电路包含从第二薄膜晶体管形成的二极管,其中保护电路包括: 第二薄膜晶体管的栅极层; 第二薄膜晶体管的源/漏极电极层; 包含与薄膜晶体管的栅极层相同材料的导电层; 导电层上的第一绝缘层,该第一绝缘层具有第一开口;在源/漏极电极层上形成的第二绝缘层,该第二绝缘层具有与第一开口的制造过程相同的第二开口;包含与象素电极相同材料的导电材料,该导电材料通过第一开口和第二开口电连接到导电层和源/漏极电极层。 26. An active matrix substrate, comprising: a scanning line; signal line; pixel electrodes; electrically connected to the scan line of the first thin film transistor; wire other than the scanning lines and the signal lines; prevent electrostatic discharge protection circuit, and The protection circuit built on the wire and the scanning lines and the signal lines between the at least one of said protection circuit comprises diodes formed from a second thin film transistor, wherein the protective circuit comprises: a gate layer of the second thin film transistor; a second The source / drain electrode layer of the thin film transistor; gate layer comprising the same material as the conductive layer of the thin film transistor; a first conductive layer on the insulating layer, the first insulating layer having a first opening; in the source / drain electrode layer a second insulating layer formed on the second insulating layer having a first opening of the same manufacturing process of the second opening; comprise the same material as the pixel electrode conductive material, the conductive material through the first and second openings electrical connected to the conductive layer and the source / drain electrode layer.
27.权利要求沈中所述的有源矩阵基板,其特征在于: 所述导线是公共电位线。 In said counterbore 27. The active matrix substrate according to claim, characterized in that: said wire is a common potential line.
28. 一种有源矩阵基板,包括: 扫描线;信号线; 象素电极;电连接到扫描线的第一薄膜晶体管;除扫描线和信号线以外的导线;防止静电破坏用的保护电路,该保护电路建立在导线和上述扫描线和上述信号线中的至少一个之间,上述保护电路包含从第二薄膜晶体管形成的二极管,其中保护电路包括: 第二薄膜晶体管的栅极层; 第二薄膜晶体管的源/漏极电极层; 包含与薄膜晶体管的栅极层相同材料的导电层; 导电层上的第一绝缘层,该第一绝缘层具有第一开口;在源/漏极电极层上形成的第二绝缘层,该第二绝缘层具有与第一开口的制造过程相同的第二开口;包含与象素电极相同材料的导电材料,该导电材料通过第一开口和第二开口电连接到导电层和源/漏极电极层。 28. An active matrix substrate, comprising: a scanning line; signal line; pixel electrodes; electrically connected to the scan line of the first thin film transistor; wire other than the scanning lines and the signal lines; prevent electrostatic discharge protection circuit, and The protection circuit built on the wire and the scanning lines and the signal lines between the at least one of said protection circuit comprises diodes formed from a second thin film transistor, wherein the protective circuit comprises: a gate layer of the second thin film transistor; a second The source / drain electrode layer of the thin film transistor; gate layer comprising the same material as the conductive layer of the thin film transistor; a first conductive layer on the insulating layer, the first insulating layer having a first opening; in the source / drain electrode layer a second insulating layer formed on the second insulating layer having a first opening of the same manufacturing process of the second opening; comprise the same material as the pixel electrode conductive material, the conductive material through the first and second openings electrical connected to the conductive layer and the source / drain electrode layer.
29.权利要求观中所述的有源矩阵基板,其特征在于: 所述导线是公共电位线。 Concept described in claim 29. The active matrix substrate, wherein: said wire is a common potential line.
30. 一种有源矩阵基板,包括: 扫描线;信号线; 象素电极;薄膜晶体管连到在配置成矩阵状的扫描线和信号线上,并和象素电极构成象素部分; 防止静电破坏用的保护电路,利用建立在上述扫描线和上述信号线的至少一个之间的薄膜晶体管,或与上述扫描线和上述信号线在电气上等价的区,和除扫描线和信号线以外的公共电位线,上述防止静电破坏用的保护电路包含二极管,其中薄膜晶体管中的栅极电极层、源极电极层和漏极电极层互相连接;和第1开口,通过选择性地除去上述栅极电极层上的绝缘层形成,第2开口,通过选择性地除去上述源极电极层和漏极电极层上的绝缘层的同样制造过程形成,经由上述第1及第2开口,用和上述象素电极相同材料构成的导电性材料层电连接上述栅极电极层、源极电极层和漏极电极层;与公共电位线一起形成的电气等价区;和与面电极电连接的公共电位线。 30. An active matrix substrate, comprising: a scanning line; a thin film transistor is connected to the arranged in a matrix of scanning lines and signal lines, and the pixel electrode and the pixel parts;; signal line; pixel electrodes to prevent static electricity undermine the protection circuit, the use of at least one thin film transistor between the establishment of said scanning line and the signal line or the scanning line and the signal line electrically equivalent to the area, and outside of the scanning lines and signal lines other The common-potential line, said electrostatic breakdown preventing circuit comprises a protection diode in which the thin film transistor gate electrode layer, the source electrode layer and a drain electrode layer connected to each other; and the first opening by selectively removing the gate an insulating layer formed on the electrode layer, the second opening, the same manufacturing process to remove the insulating layer of the source electrode layer and a drain electrode layer are formed by selectively, via the first and second openings, and with the above-described electrically conductive material layer composed of the same material as the pixel electrode connected to the gate electrode layer, the source electrode layer and a drain electrode layer; electrically equivalent region together form the common potential line; and a surface electrode electrically connected to the common potential line.
31. 一种有源矩阵基板,包括: 扫描线;信号线; 象素电极;薄膜晶体管连到在配置成矩阵状的扫描线和信号线上,并和象素电极构成象素部分; 防止静电破坏用的保护电路,利用建立在上述扫描线和上述信号线的至少一个之间的薄膜晶体管,或与上述扫描线和上述信号线在电气上等价的区,和除扫描线和信号线以外的公共电位线,上述防止静电破坏用的保护电路包含二极管,其中薄膜晶体管中的栅极电极层、源极电极层和漏极电极层互相连接;和第1开口,通过选择性地除去上述栅极电极层上的绝缘层形成,第2开口,通过选择性地除去上述源极电极层和漏极电极层上的绝缘层的同样制造过程形成,经由上述第1及第2开口,用和上述象素电极相同材料构成的导电性材料层电连接上述栅极电极层、源极电极层和漏极电极层;与公共电位线一起形成的电气等价区;和与面电极电连接的公共电位线;且公共电位线包括栅极电极材料布线、源极电极材料布线、和连接在栅极电极材料布线和源极电极材料布线之间的象素电极材料。 31. An active matrix substrate, comprising: a scanning line; a thin film transistor is connected to the arranged in a matrix of scanning lines and signal lines, and the pixel electrode and the pixel parts;; signal line; pixel electrodes to prevent static electricity undermine the protection circuit, the use of at least one thin film transistor between the establishment of said scanning line and the signal line or the scanning line and the signal line electrically equivalent to the area, and outside of the scanning lines and signal lines other The common-potential line, said electrostatic breakdown preventing circuit comprises a protection diode in which the thin film transistor gate electrode layer, the source electrode layer and a drain electrode layer connected to each other; and the first opening by selectively removing the gate an insulating layer formed on the electrode layer, the second opening, the same manufacturing process to remove the insulating layer of the source electrode layer and a drain electrode layer are formed by selectively, via the first and second openings, and with the above-described electrically conductive material layer composed of the same material as the pixel electrode connected to the gate electrode layer, the source electrode layer and a drain electrode layer; electrically equivalent region together form the common potential line; and a surface electrode electrically connected to the common potential line; and the common potential line comprises a gate electrode material of a wiring, the source electrode wiring materials, the electrode material and the pixel is connected between the gate electrode and the source electrode material of a wiring material of the wiring.
32. 一种液晶显示装置,包括:权利要求30所述的有源矩阵基板。 32. A liquid crystal display device, comprising: an active matrix substrate according to claim 30.
33. 一种液晶显示装置,包括:权利要求31所述的有源矩阵基板。 33. A liquid crystal display device, comprising: an active matrix substrate according to claim 31.
34. 一种有源矩阵基板,包括:扫描线;信号线;薄膜晶体管,配置成与扫描线和信号线的交叉点一致;象素电极;配置成与薄膜晶体管一致;保护元件,以防止在至少一个扫描线、信号线、和公共电位线之间电连接的静电破坏, 保护元件至少部分形成象素电极材料层。 34. An active matrix substrate, comprising: a scanning line; signal line; a thin film transistor, arranged in line with the intersection of the scanning lines and the signal lines; pixel electrodes; was aligned with the thin film transistor; protection elements, in order to prevent at least one electrical connection between the electrostatic scanning lines, signal lines, and the common potential line damage, a protective element at least partially forming the pixel electrode material layer.
35.权利要求34中所述的有源矩阵基板,其特征在于:扫描线和信号线的至少一个电连接到电极,以连接外部端子,保护元件电连接在公共电位线和电极之间以连接外部端子。 The active matrix substrate according to claim 35. 34, characterized in that: the at least one electrical scanning lines and signal lines connected to the electrode, to connect the external terminals, the protection element is electrically connected between the common potential line and the electrode to connect external terminals.
36.权利要求34中所述的有源矩阵基板,其特征在于:保护元件使用薄膜晶体管。 The active matrix substrate according to claim 36. 34, characterized in that: the protective element using a thin film transistor.
37.权利要求34中所述的有源矩阵基板,其特征在于:用于保护元件的薄膜晶体管的源极电极和漏极电极中的一个经像素电极材料层电连接到扫描线和信号线中的一个。 The active matrix substrate according to claim 37. 34, characterized in that: a thin film transistor for the source electrode and the drain electrode of the protection element in a material layer via the pixel electrode electrically connected to the scanning lines and signal lines a.
38.权利要求34中所述的有源矩阵基板,其特征在于:保护元件包括二极管,该二极管形成于将薄膜晶体管电连接在栅极电极和源极电极和漏极电极中的一个之间。 The active matrix substrate according to claim 38. 34, characterized in that: the protective element comprises a diode which is formed on the thin film transistor electrically connected between the gate electrode and the source electrode and the drain electrode of a between.
39.权利要求34中所述的有源矩阵基板,其特征在于:用于保护元件的薄膜晶体管的源极电极和漏极电极中的一个经像素电极材料层连接到扫描线和信号线中的一个。 The active matrix substrate according to claim 39. 34, characterized in that: the protective element for the source electrode and the drain electrode of the thin film transistor in a pixel electrode through the material layer is connected to the scanning lines and signal lines a.
40.权利要求34中所述的有源矩阵基板,其特征在于:用于保护元件的薄膜晶体管的栅极电极经像素电极材料层连接到薄膜晶体管的源极电极和漏极电极中的一个。 The active matrix substrate according to claim 40. 34, characterized in that: a gate electrode of the protection element via the thin film transistor connected to the pixel electrode material layer is a source electrode and a drain electrode of the thin film transistor of one.
41.权利要求34中所述的有源矩阵基板,其特征在于:保护元件包括从第一薄膜晶体管的栅极电极和漏极电极的连接形成的第一二极管,和从第二薄膜晶体管的栅极电极和漏极电极的连接形成的第二二极管,第一二极管和第二二极管彼此以相反方向并联连接。 The active matrix substrate according to claim 41. 34, characterized in that: the protective element comprises a first diode connected to the gate electrode of the first thin film transistor and a drain electrode formed, and from the second thin film transistor and a second diode connected to the drain electrode of the gate electrode, a first diode and a second diode connected in parallel to each other in opposite directions.
42.权利要求34中所述的有源矩阵基板,其特征在于:公共电位线电连接到面电极。 The active matrix substrate according to claim 42. 34, characterized in that: the common potential line is electrically connected to the surface electrode.
43.权利要求34中所述的有源矩阵基板,其特征在于:公共电位线电连接到一个衬底,以便经像素电极材料层连接到面电极。 The active matrix substrate according to claim 43. 34, characterized in that: the common potential line is electrically connected to a substrate, so that by the pixel electrode connected to the surface of the electrode material layer.
44.一种液晶显示装置,包括:权利要求34所述的有源矩阵基板。 44. A liquid crystal display device, comprising: an active matrix substrate according to claim 34.
45.一种防止在有源矩阵型液晶显示装置中包含的有源元件的静电破坏的方法,所述方法包括下列步骤:形成包括连接到矩阵状配置的扫描线和信号线的薄膜晶体管,以及连接在该薄膜晶体管一端上的象素电极的象素部分;提供防止静电破坏用的保护电路,该电路包含二极管,二极管具有在薄膜晶体管中与源极电极层和漏极电极层互相连接的栅极电极层;和连接保护电路以防止在至少一个扫描线、信号线、与扫描线和信号线中至少一个在电气上等价的区、和除扫描线和信号线以外的公共电位线之间的静电破坏。 45. A method of preventing in an active matrix type liquid crystal display device comprising the method of the electrostatic destruction of the active elements, said method comprising the steps of: forming comprises a matrix arrangement connected to the scanning lines and signal lines of a thin film transistor, and pixel electrodes connected to the pixel portion on one end of the thin film transistor; provided to prevent electrostatic discharge protection circuit, the circuit comprising a diode, a diode in the thin film transistor having a source electrode layer and a drain electrode layer connected to the gate of each other and connections between the protection circuitry to prevent at least one scan line, signal lines, and the scanning lines and signal lines in at least one electrically equivalent area, and in addition to the scanning lines and signal lines of the common potential line; electrode layer electrostatic damage.
46.权利要求45所述的方法,其特征在于:公共电位线包括栅极电极材料布线、源极电极材料布线、和连接在栅极电极材料布线和源极电极材料布线之间的象素电极材料。 46. The method according to claim 45, wherein: the common potential line comprises a gate electrode material of a wiring, the source electrode wiring material, and the pixel electrode connected between the gate electrode and the source electrode material of a wiring material wirings materials.
Description  translated from Chinese

有源矩阵基板的制造方法和薄膜元件的制造方法 A manufacturing method of the active matrix substrate and the thin film element

[0001] 本申请是申请号为96191152.2(PCT/JP96/(^858)、申请日为1996年10月2日的母案的分案申请。技术领域 [0001] This application is Application No. 96191152.2 (PCT / JP96 / (^ 858), the filing date of the parent application is a divisional case October 2, 1996 in the Technical Field

[0002] 本发明涉及薄膜元件的制造方法、有源矩阵基板、液晶显示装置、有源矩阵基板的制造方法以及包含于液晶显示装置中的有源元件的防止静电破坏的方法.背景技术 [0002] The present invention relates to a method for manufacturing a thin film device, an active matrix substrate, a liquid crystal display apparatus of a method to prevent electrostatic destruction of the active element of the device, method of manufacturing the active matrix substrate and included in the liquid crystal display. BACKGROUND OF THE INVENTION

[0003] 在有源矩阵基板方式的液晶显示装置中,在各象素电极上连接着开关元件,借助于这些开关元件接通或断开各象素电极. [0003] The liquid crystal in the active matrix substrate of a display device, each pixel electrode is connected to the switching element, by means of which the switching element is turned on or off each pixel electrode.

[0004] 作为开关元件,例如使用薄膜晶体管(TFT). [0004] As the switching element, for example a thin film transistor (TFT).

[0005] 薄膜晶体管的结构和工作基本上和单晶硅的MOS晶体管相同. [0005] The structure and operation of single-crystal silicon thin film transistor and a MOS transistor is substantially the same.

[0006] 作为使用了非晶硅(α -Si)的薄膜晶体管的结构已知有若干种,而一般使用栅极电极位于非晶硅膜下边的背栅极结构(反交错结构). [0006] As a structure using amorphous silicon (α -Si) thin film transistor of the known number of species, but in general the use of the gate electrode is located below the amorphous silicon film back gate structure (inverted staggered structure).

[0007] 在薄膜晶体管的制造中,重要的是减少制造工序数而且确保高合格率. [0007] In manufacturing a thin film transistor, it is important to reduce the number of manufacturing steps and ensure high yield.

[0008] 另外,有效地保护薄膜晶体管免受在有源矩阵基板的制造过程中发生的静电引起的破坏也很重要.保护薄膜晶体管免受静电破坏的技术例如记述在日本国的实开昭63-33130号的微型胶片和特开昭62-187885号公报中.发明内容 [0008] In addition, the effective protection of the thin film transistor from the electrostatic damage occurring in the manufacturing process of the active matrix substrate due also important protection from electrostatic damage to the thin film transistor technology, for example described in the Japanese Unexamined Patent Publication 63 -33,130 number microfilm and Unexamined Patent Publication No. 62-187885 Gazette. SUMMARY

[0009] 本发明的目的之一是提供能够削减薄膜晶体管的制造工序数而且高可靠性的新的薄膜元件的制造加工技术. [0009] One object of the present invention is to provide a number of manufacturing steps can be reduced and a thin film transistor with high reliability of the manufacturing process of the thin film element of the new technology.

[0010] 还有,本发明的另一个目的是提供具备使用其制造加工技术不使制造工艺复杂化而形成的、具有充分静电保护能力的保护元件的有源矩阵基板以及液晶显示装置. [0010] Further, another object of the present invention is to provide a manufacturing process which includes the use of technology not to complicate the manufacturing process and the formation of a protective element of the full capacity of the electrostatic protection active matrix substrate and a liquid crystal display device.

[0011] 还有,本发明的又一个目的是提供能够防止包含在TFT基板上的有源元件(TFT) 遭受静电破坏的防止静电破坏的方法. [0011] Further, still another object of the present invention is to provide to prevent electrostatic discharge can be prevented in the method of the TFT substrate comprising an active element (TFT) from electrostatic damage.

[0012] 本发明的薄膜元件的制造方法的优选形态之一是在制造背栅极结构的薄膜元件时,包括: When [0012] One preferred embodiment of the thin film element manufacturing method of the present invention is that in the back-gate structure thin-film element, comprising:

[0013] 形成保护膜以便复盖源极电极层漏极电极层以及栅极电极材料层的工序; [0013] The protective film is formed so as to cover the source electrode layer, the drain electrode layer and a step of a gate electrode material layer;

[0014] 形成第1开口和第2开口的工序,在形成了保护膜之后,选择性地刻蚀存在于栅极电极层或栅极电极材料层上的栅极绝缘膜以及保护膜的重迭膜的一部分,形成露出栅极电极层或栅极电极材料层表面上一部分的第1开口,同时,选择地刻蚀源极电极层或漏极电极层上的保护膜的一部分,形成露出源极电极层或漏极电极层表面上一部分的第2开口; [0014] forming a first opening and a second opening step, after formation of a protective film, selectively etching the gate insulating film is present in the gate electrode layer or the gate electrode material layer, and a protective film overlap part of the film, a gate electrode layer is formed on the exposed gate electrode material layer or the surface of the first portion of the opening, while selectively etched portion of the protective film, a source electrode layer or a drain electrode layer, a source electrode is formed to expose the upper surface of the second opening portion of the electrode layer or a drain electrode layer;

[0015] 连接工序,在形成上述开口之后,经由第1或第2开口,把导电性材料层连接到栅极电极层、栅极电极材料层、源极电极层、漏极电极层中的至少一个上. [0015] connection step, after forming the opening, through the first or the second opening, the conductive material layer is connected to the gate electrode layer, a gate electrode material layer, the source electrode layer, the drain electrode layer of at least one on.

[0016] 若依据上述薄膜元件的制造方法,则可成批地进行绝缘膜的选择性刻蚀.由此,能够把外部连接端子连接到电极的开口形成工序(压焊区露出工序)和把内部布线连接到电极上的开口形成工序(连接孔形成工序)一起来进行,削减了工序数. [0016] If according to the above-described method for manufacturing a thin film element, can be carried out in batches selectively etching the insulating film. Accordingly, it is possible to connect an external electrode terminal is connected to the opening forming step (step of exposing a bonding pad) and the Internal wiring is connected to the opening on the electrode formation process (connection hole formation step) were together, reducing the number of processes.

[0017] 作为“导电性材料层”,最好使用ITOandium Tin Oxide)膜.如上述,由于贯通栅极电极材料层上的第1绝缘膜及该第1绝缘膜上的第2绝缘膜的重迭膜形成第1开口,故构成相当于2层绝缘膜厚度的深连接孔. [0017] As the "conductive material layer" is preferably used ITOandium Tin Oxide) film. Weight As described above, due to penetrating the first insulating film and the gate electrode material layer on the first insulating film, a second insulating film laminated film forming the first opening, it constitutes the equivalent of the deep connection hole 2 interlayer insulating film thickness.

[0018] 然而,由于ITO熔点高,故与铝等相比较台阶复盖率好,从而,即使经由深连接孔也不会造成连接不良. [0018] However, since the ITO high melting point, it is compared with aluminum, the rate of good step coverage, and thus, even if it will not cause a bad connection via a deep connection hole.

[0019] 作为“导电性材料层”,除去ITO之外,也可以使用金属氧化物那样熔点高的、其它的透明电极材料.例如,可以使用SnOx、SiOx等金属氧化物.这种情况下,台阶复盖率也是可实用的. [0019] As the "conductive material layer", except for ITO, a metal oxide may also be used as a high melting point, the other transparent electrode material. For example, SnOx, SiOx and other metal oxides. In this case, step coverage rate is practically useful.

[0020] 另外,本发明的有源矩阵基板的优选形态之一是在扫描线及信号线中的至少一条线或者与该线电气等效部位和共用电位线之间设置使用了薄膜晶体管的防止静电破坏用保护装置. [0020] Further, one preferred embodiment of the active matrix substrate of the present invention is to prevent the use of a thin film transistor provided between the scanning lines and signal lines or in at least one line electrically equivalent to the line parts and the common potential line electrostatic damage protective devices.

[0021] 防止静电破坏保护装置构成为包含连接了薄膜晶体管中的栅极电极层和漏极电极层而构成的二极管,在同一制造工序中,形成用于把栅极电极层和漏极电极层电气连接的选择性地除去栅极电极层上的绝缘层而构成的第1开口和选择性地除去漏极电极层上的绝缘层而构成的第2开口,而且,上述栅极电极层和上述漏极电极层经由上述第1及第2 开口,用和上述象素电极同一材料组成的导电层连接在一起. [0021] to prevent electrostatic discharge protection device is configured to include a thin film transistor connected to the gate electrode layer and a drain electrode layer constituted of a diode, in the same manufacturing process for forming the gate electrode layer and a drain electrode layer selectively electrically connected to the insulating layer is removed and a gate electrode layer formed on the first opening and the selective removal of the insulating layer and the drain electrode layer formed on the second opening, and the gate electrode layer and said drain electrode layer via the first and second openings, the conductive layer are connected together and said pixel electrodes with the same material.

[0022] 把TFT的栅极和漏极短路形成的MOS 二极管(MIS 二极管)实质上是晶体管,流过电流的能力高,能够高速地吸收静电,从而静电保护能力高.还有,由于实际上是晶体管, 故容易控制电流-电压特性的阈值电压(Vth).从而,能够减少无用的泄放电流.另外,薄膜元件的制造工序数被减少,制造容易. [0022] The gate and drain of TFT short-circuit the diode formed by MOS (MIS diode) is essentially the transistor, the current flowing through a high capacity, a high speed absorbing static electricity, so that a high protection against static electricity. Also, since in fact is a transistor, it is likely to control the current - voltage characteristics of the threshold voltage (Vth) makes it possible to reduce unwanted leakage current addition, the number of manufacturing steps of the thin film element is reduced, production is easy.

[0023] 作为“象素电极”及“和象素电极同一材料组成的导电层”最好使用ITOandium Tin Oxide)膜.除ITO膜之外,也可以使用金属氧化物那样的高熔点的其它透明电极材料.例如,可以使用SnOx、ZnOx等金属氧化物. [0023] as "pixel electrodes" and "and the pixel electrode of the same material of the conductive layer" is preferably used ITOandium Tin Oxide) film. In addition to ITO films, may also be used as a high melting point metal oxide other transparent electrode materials. For example, SnOx, ZnOx other metal oxides.

[0024] 本发明的有源矩阵基板的优选形态之一中上述“和扫描线及信号线中至少一条线电气等效部位”是用于连接外部连接端子的电极(压焊区),还有,上述“共用电位线”是在交流驱动液晶之际给出作为基准的基准电位的线(LC-C0M线),或者是在液晶显示装置的制造阶段把连接上述外部连接端子用的电极连接在一起形成等电位的线(保护环). [0024] One preferred embodiment of an active matrix substrate of the present invention, the above-mentioned "and the scanning lines and signal lines in at least one line of the electric equivalent part" is used for connecting external connection terminals of the electrode (bonding pad), and the "common potential line" in the AC driving of the liquid crystal is given as a reference on the occasion of the reference potential line (LC-C0M line), or a liquid crystal display device manufacturing stage electrode connecting the external connection terminals is connected to together form equipotential lines (guard ring).

[0025] 保护环作为液晶显示装置制造阶段中的静电措施,是设在压焊区外侧的线.LC-COM线以及保护环都是共用电位线,从而,通过在压焊区和这些线之间连接保护二极管,能够使静电在这些线上释放. [0025] As a liquid crystal device guard ring manufacturing stage electrostatic measures display, is disposed outside the pressure pad line .LC-COM line and the guard ring are common potential line, whereby, in the pressure pad and through these lines of en protection diodes, enabling electrostatic discharge in these lines.

[0026] 还有,本发明的有效矩阵基板的优选形态之一中,“防止静电破坏用保护装置”设置在连接外部端子用的电极(压焊区)和在交流驱动液晶之际给出作为基准的基准电位的线(LC-C0M线)之间,以及连接外部端子用的电极(压焊区)和把连接外部端子用的电极(压焊区)连接在一起形成等电位的线(保护环)之间这两者上. [0026] Further, one preferred embodiment of the active matrix substrate of the present invention, "to prevent electrostatic discharge protective device" is provided with an electrode connected to an external terminal (bonding pad) and a given AC driving liquid crystal as the occasion between the line (LC-C0M line) reference potential reference, and the connection electrodes (bonding pads) and the external terminal electrode is connected with the external terminal with the (pressure pad) connected together to form an equipotential line (protective between the rings) on both.

[0027] 保护环在把TFT基板和对向基板(彩色滤波器基板)粘接之后,在与驱动用IC连接前切断,但LC-COM线是留在最终制品中的线.从而,在基板切断后但连接LC之前,若依据上述结构,则保护象素部分的TFT免遭静电破坏,从而,提高制品的可靠性.[0028] 还有,由于在最终制品中也留有保护二极管,故也提高了制品实际使用中的抗静电破坏的强度.进而,由于是使用了TFT的保护二极管,故容易控制阈值电压(Vth),还能够减少泄放电流,因而,即使在最终制品中留有二极管也没有不良影响. [0027] Protection of loops in the TFT substrate and then bonded to the substrate (color filter substrate) before connecting the driving IC cut, but LC-COM line is left in the final product in. Thus, the substrate after cutting but before connecting the LC, if based on the above-described configuration, the pixel portion TFT protection from electrostatic breakdown, thereby, improve the reliability of products. [0028] Further, since in the final product is also left protection diode, so also improves the product in actual use antistatic destruction strength. Further, since a TFT using protective diodes, it is easy to control the threshold voltage (Vth), but also can reduce the leakage current, therefore, even if left in the final product diodes has no adverse effect.

[0029] 还有,本发明的有源矩阵基板制造方法的优选形态之一中,防止静电破坏用保护装置具备把第1 二极管的阳极和第2 二极管的阴极连接在一起,把上述第1 二极管的阴极和上述第2 二极管的阳极连接在一起而构成的双向二极管. [0029] Further, one preferred embodiment of the method of manufacturing the active matrix substrate of the present invention to prevent electrostatic discharge comprising the anode of the first diode and the second diode cathode connected together by protective means, the said first diode The cathode and anode of said second diode connected together to form a bi-directional diode.

[0030] 由于是双向保护二极管,因而能够从正极性冲击和反极性冲击这两个方面保护TFT. [0030] Because it is a two-way protection diodes, which can be protected from the positive polarity TFT impact and the impact of these two aspects of reverse polarity.

[0031] 还有,本发明的液晶显示装置使用本发明的有源矩阵基板构成.通过切实地防止有效矩阵基板中象素部分的有源元件(TFT)的静电破坏,也提高了液晶显示部分的可靠性 [0031] Further, the liquid crystal display device of the present invention is the use of the present invention is an active matrix substrate made by reliably preventing the active element in the effective pixel portion of the matrix substrate (TFT) of the electrostatic discharge damage, but also to improve the liquid crystal display section Reliability

[0032] 还有,本发明的有源矩阵基板制造方法的优选形态之一中,在形成背栅结构的TFT 之际,包括: [0032] Further, one preferred embodiment of the method of manufacturing an active matrix substrate of the present invention, at the occasion of forming the back-gate structure TFT, the comprising:

[0033] 形成工序,在形成由相同材料构成的源漏电极层的同时,在绝缘膜上的预定区域中形成和源漏电极层相同材料构成的源漏电极材料层; [0033] forming step is formed by the source of the same material, while the drain electrode layer, source and drain electrode layer is formed and the source and drain electrode material layer of the same material in a predetermined region of the insulating film;

[0034] 保护膜形成工序,形成保护膜使之复盖源漏电极层以及源漏电极材料层; [0034] The protective film forming step of forming the protective film so as to cover the source and drain electrode layer, and source and drain electrode material layer;

[0035] 形成工序,选择性地刻蚀存在于栅极电极层或栅极电极材料层上的栅极绝缘膜以及保护膜的重迭膜形成露出栅极电极层或栅极电极材料层的表面上一部分的第1开口,同时,选择性地刻蚀源漏电极层或源漏电极材料层上的保护膜形成露出上述源漏极电极层或源漏极电极材料层的表面上一部分的第2开口; [0035] forming step, exposing the gate electrode layer or the surface of the gate electrode material layer is selectively etched in the presence of a gate electrode layer or the gate insulating film on the gate electrode material layer and the protective film is formed overlapping film on the upper portion of the first opening, while selectively etched source and drain electrode layer or a protective film on the electrode material layer to expose the source and drain are formed above the source electrode layer or a drain source drain electrode material layer surface of the second part of the opening;

[0036] 连接工序,经由上述第1或第2开口,把导电性材料连接到栅极电极层、栅极电极材料层、上述源漏电极层或上述源漏极电极材料层. [0036] connection step, through the first or the second opening, the conductive material is connected to the gate electrode layer, a gate electrode material layer, said source and drain electrode layer or the source and drain electrode material layer.

[0037] 若依据上述薄膜元件的制造方法,则可成批进行绝缘膜的选择性刻蚀.由此,能够把外部端子连接到压焊区的开口形成工序(压焊区露出工序)和把布线连接到电极上的开口的形成工序(连接孔形成工序)一起进行,削减了工序数. [0037] If according to the above-described method for manufacturing a thin film device, selectively etching may be batch insulating film. Accordingly, it is possible to connect an external terminal to the opening forming step of bonding pads (bonding pads exposing step), and the a wiring connected to the electrode on the opening forming step (a connection hole forming step) carried out together with reduction of the number of steps.

[0038] 该制造方法在作为静电保护元件的MOS 二极管的形成方面也可应用.另外,还能够用于压焊区近旁的交叉布线的形成.所谓“交叉布线”是把液晶显示装置的内部布线导出到密封材料的外侧之际,为谋求由厚的层间绝缘膜造成的布线的保护,把位于上层的布线连接到下层的布线上并迂回导出到外部而使用的布线. [0038] In this manufacturing method is formed as an electrostatic protection element aspect a MOS diode may be used. In addition, can also be used to form the bonding region in the vicinity of the cross wiring of the so-called "cross wiring" is the internal wiring of the liquid crystal display device Export to the outside of the occasion of the sealing material, in order to seek the protection of the wiring by the inter-layer insulating film thickness due to the upper level wiring is connected to the lower layer wiring and the wiring to the outside detour export used.

[0039] 上述“导电性材料层”最好和象素电极是同一材料.由此,能够在象素电极的形成工序的同时形成由导电性材料构成的布线. [0039] The "conductive material layer" and the pixel electrode is preferably the same material. Accordingly, it is possible while the pixel electrode forming step of forming a wiring of a conductive material.

[0040] 进而,作为“导电性材料层”最好使用ITOandium Tin Oxide)膜.除去ITO膜之外,也可以使用金属氧化物这样的高熔点的其它透明电材料. [0040] Further, as a "electrically conductive material layer" is preferably used ITOandium Tin Oxide) film is removed to outside of the ITO film, may also be used other transparent electrically conductive material such as a high melting point metal oxide.

[0041] 还有,本发明的有源矩阵型液晶显示装置中的防止静电破坏法的优选形态之一中,把由双向二极管组成的防止静电破坏用保护装置连接在扫描线及信号线中至少一条线或与其线电气等效的部件和共用电位线之间,由此,防止包含于液晶显示装置中的有源元件的静电破坏. [0041] In addition, the present invention is an active matrix type liquid crystal display device in one preferred embodiment of the method of preventing electrostatic damage to the two-way diode to prevent electrostatic damage protection device in connection with the scanning lines and signal lines, at least a line or a line between its electrical equivalent elements and the common potential line, thereby preventing contained in the liquid crystal display device of the electrostatic destruction of the active element.

[0042] 能够可靠地防止包含于有源矩阵基板上的有源元件(TFT)的静电破坏.附图说明 [0042] can be reliably prevented on the active matrix substrate comprising an active element (TFT) of the electrostatic breakdown. BRIEF DESCRIPTION

[0043] 图1〜图6是示出本发明的薄膜元件的制造方法的、每个工序的元件断面图. [0043] Figure 1 ~ Figure 6 is a diagram showing a method of manufacturing a thin film device of the present invention, a sectional view of each process element.

[0044] 图7A〜图7F用于说明图1〜图6所示的制造加工技术的特征. [0044] FIG 7A~ FIG 7F for explaining the manufacturing process technology characterized shown in Fig. 1 ~ 6.

[0045] 图8A-图8G是对比例的各工序的元件断面图. [0045] FIG 8A- FIG. 8G is a component ratio of each step of the cross-sectional view.

[0046] 图9示出本发明的TFT基板的结构例. [0046] Figure 9 shows an example of the structure of the TFT substrate of the present invention.

[0047] 图10示出图9的TFT基板的压焊区周边的结构. [0047] Figure 10 shows a TFT substrate in Fig. 9 the periphery of the pressure pad structure.

[0048] 图IlA示出静电保护电路的结构,图IlB示出静电保护电路的等效电路图,图IlC 示出静电保护电路的电压-电流特性. [0048] Figure IlA shows the structure of an electrostatic protection circuit, the equivalent circuit diagram shown in Figure IlB electrostatic protection circuit is shown in Figure IlC electrostatic protection circuit voltage - current characteristic.

[0049] 图12示出静电保护电路的平面布局形状. [0049] Figure 12 shows the electrostatic protection circuit layout shape.

[0050] 图13使用元件的断面结构说明图12的静电保护电路的结构. [0050] Figure 13 a cross-sectional structure of an explanatory configuration diagram of elements used electrostatic protection circuit 12.

[0051] 图14用于说明静电保护电路的功能. [0051] Figure 14 is used to illustrate the function of electrostatic protection circuit.

[0052] 图15示出把液晶面板的布线导出到连接压焊区情况时的结构例. [0052] FIG. 15 shows a configuration of the liquid crystal panel wiring exported to bonding pads of situations.

[0053] 图16例示了本发明的有源矩阵基板中除去象素部分的区域的ITO的使用部位. Illustrates the present invention an active matrix [0053] Figure 16 cases removed ITO substrate region of the pixel portion using the site.

[0054] 图17示出本发明的液晶显示装置中的象素部分的平面布局形状. [0054] Figure 17 illustrates the present invention, a liquid crystal display device in the shape of the planar layout of the pixel portion.

[0055] 图18是沿图17的BB线的液晶显示装置的断面图. [0055] FIG. 18 is a liquid crystal 17 along the line BB sectional view of a display device.

[0056] 图19〜图25分别是示出本发明的有源矩阵基板的制造方法的、各工序的元件断面图. [0056] FIG. 19~ 25 are illustrating a method of manufacturing the active matrix substrate of the present invention, a sectional view of each element step.

[0057] 图沈示出使用图25的有源矩阵基板组装的液晶显示装置的主要部分的断面结构 [0057] FIG Shen shows an active matrix substrate using the assembly of FIG. 25 is a main part of a liquid crystal display device of the cross-sectional structure

[0058] 图27是用于说明基于元件分断装置的基板的分断工序的说明图. [0058] FIG. 27 is an explanatory diagram illustrating breaking step breaking device element substrate based.

[0059] 图观是用于说明有源矩阵型的液晶显示装置的总体结构的概要的说明图. [0059] is a diagram for explaining the concept of an active matrix type liquid crystal display apparatus of an outline of the overall configuration of Fig.

[0060] 图四是示出有源矩阵型的液晶显示装置的象素部分的结构的电路图. [0060] Figure IV is a diagram showing a circuit diagram of an active matrix type liquid crystal device structure of the pixel portion of the display.

[0061] 图30示出用于驱动图四的象素部分中的液晶的电压波形.具体实施方式 [0061] Figure 30 shows a voltage waveform diagram for driving the pixel portion in the four liquid crystal. DETAILED DESCRIPTION

[0062] 下面,参照附图说明本发明的实施形态. [0062] Referring to the drawings embodiments of the present invention will be described.

[0063](第1实施形态) [0063] (first embodiment)

[0064] 图1〜图6是示出本发明的薄膜元件(背栅结构的TFT)的制造方法一例的、各工序的元件断面图. [0064] Figure 1 ~ Figure 6 is a diagram showing a method of manufacturing a thin film element of the present invention (the back-gate structure TFT) is an example, each step of the element cross-sectional view.

[0065](各制造工序的内容) [0065] (the content of each of the manufacturing process)

[0066](工序 1) [0066] (Step 1)

[0067] 如图1所示,在玻璃基板(无碱基板)2上使用光刻技术,形成例如由1300 λ左右厚度的Cr (铬)构成的栅极电极如以及栅极电极材料层4b、4c.栅极电极如是在象素部分上形成矩阵状的背栅结构的TFT的栅极电极.另外,栅极电极材料层4b成为形成后述的防止静电破坏用保护元件的区域,还有,栅极电极材料层4c成为形成与外部连接用或检查用端子的区域. [0067] As shown in FIG, 2 in photolithography on a glass substrate (non-alkali substrate), a gate electrode is formed, for example Cr by a thickness of about 1300 λ (Cr) and formed as a gate electrode material layer 1 4b , 4c. The gate electrode in the case of a matrix structure of the back gate of the TFT gate electrode is formed on the pixel portion. Further, a gate electrode material layer 4b formed after becoming described later to prevent electrostatic breakdown protective element region, as well as , the gate electrode material layer 4c becomes connected to the external terminals for inspection by or formed in a region.

[0068] 接着,用等离子CVD法连续地生成硅氮化膜SiNx等构成的栅极绝缘膜6、未掺入杂质的本征非晶硅膜8以及η型硅膜10 (欧姆接触层),然后,用光刻法将本征非晶硅膜8以及η型硅膜(欧姆接触层)10形成小岛.[0069] 这时,栅极绝缘膜6的厚度例如是约3000 A,本征硅膜8的厚度例如是约3000 A,欧姆接触层10的厚度例如是约500 λ . [0068] Next, by plasma CVD method for continuously forming a gate insulating film made of a silicon nitride film SiNx and so on 6, unincorporated impurities intrinsic amorphous silicon film 8, and η-type silicon film 10 (ohmic contact layer), Then, 10 is formed by photolithography intrinsic amorphous silicon film islands 8 and η-type silicon film (ohmic contact layer). [0069] In this case, the thickness of the gate insulating film 6, for example, about 3000 A, the intrinsic thickness of the silicon film 8, for example, about 3000 A, the thickness of the ohmic contact layer 10 is, for example, approximately 500 λ.

[0070] 本工序中的特征在于不形成对于栅极绝缘膜的连接孔. [0070] This step is characterized by not forming a gate insulating film for the connection hole.

[0071](工序 2) [0071] (Step 2)

[0072] 接着,如图2所示,用溅射以及光刻形成例如由Cr (铬)构成的1300义左右的源、 漏电极12a、12b. [0072] Next, shown in Figure 2, for example, is formed by sputtering and photolithography source 1300 defined by Cr (chromium) formed around the drain electrode 12a, 12b.

[0073](工序 3) [0073] (Step 3)

[0074] 接着,如图3所示,以源、漏电极12a、12b为掩膜,用刻蚀法除去欧姆接触层10的中央部分,进行源、漏极的分离(分离刻蚀).这时,能够在同一刻蚀装置的同一腔内连续地进行用于源、漏极电极的图形的刻蚀和分离刻蚀. [0074] Next, shown in Figure 3, the source, the drain electrode 12a, 12b as a mask, removing the central portion of the ohmic contact layer 10 by etching, the source, the drain of the separation (separation etching). This When, for the source can be continuously performed in the same chamber in the same etching apparatus, the etching pattern and the drain electrode separation etch.

[0075] S卩,首先用Cl2族的刻蚀气体进行源漏极电极12a、12b的刻蚀,接着把刻蚀气体换为SF6族的气体可以进行欧姆接触层10的中央部分的刻蚀. [0075] S Jie, first etching with Cl2 gas Group source and drain electrodes 12a, 12b of the etching, the etching gas is then replaced with SF6 gas family may be etched central portion of the ohmic contact layer 10.

[0076](工序 4) [0076] (Step 4)

[0077] 接着,如图4所示,例如用等离子CVD法形成保护膜14.该保护膜14例如是2000义左右的氮化硅膜(SiNx). [0077] Next, as shown in Figure 4, for example, by plasma CVD method to form a protective film 14. The protective film 14, for example, a silicon nitride film of about 2000 defined (SiNx).

[0078](工序 5) [0078] (Step 5)

[0079] 接着,如图5所示,在保护膜14上形成用于连接外部端子(屏蔽线和IC的输出引线等)的开口20,同时形成连接孔16、18. [0079] Next, as shown in Figure 5, the opening for connection to external terminals (IC shield wire and output lead, etc.) 20 is formed on the protective film 14, connection holes 16, 18 are formed simultaneously.

[0080] 开口20和连接孔18贯通栅极绝缘膜6以及保护膜14而形成,连接孔16仅贯通保护膜14形成. [0080] opening 20 and the gate insulating film 18 through the connecting hole 6 and a protective film 14 is formed, only connection hole 16 is formed through the protective film 14.

[0081] 形成开口20及连接孔18之际,栅极电极材料层4b、k分别起到刻蚀中止层(Stopper)的作用.另外,在形成连接孔16之际,源、漏电极12b起到刻蚀中止层的作用. [0081] 20 and the connection hole is formed on the occasion of the opening 18, the gate electrode material layer 4b, k respectively function as an etch stop layer (Stopper) Further, in the occasion of forming a connection hole 16, the source, the drain electrode 12b from to effect etching stop layer.

[0082](工序 6) [0082] (Step 6)

[0083] 接着,如图6所示,以500 λ左右的厚度淀积ITOandium TinOxide)膜,选择性地刻蚀、形成ITO构成的布线2及电极22b. ITO的刻蚀用HC1/HN03/H20的混合液的湿法刻蚀来进行. [0083] Next, shown in Figure 6, to a thickness of approximately 500 λ deposition ITOandium TinOxide) film, is selectively etched to form a wiring electrode of ITO 2 and 22b. ITO etching with HC1 / HN03 / H20 a mixture of wet etching is performed.

[0084] 如上述,贯通栅极绝缘膜6及保护膜14的重迭膜形成开口20及连接孔18.从而, 构成相当于2层绝缘膜厚度的深连接孔. [0084] As described above, through the gate insulating film 6 and protective film 14 is formed overlapping film and the connecting hole 18. The opening 20 so as to form a connection hole 2 corresponds to the deep layer of the insulating film thickness.

[0085] 然而,由于ITO的熔点高故与铝相比台阶复盖率好,从而即使经由深连接孔也不会造成连接不良,另外,除ITO之外,也可以使用金属氧化膜这样的高熔点的其它透明电极材料.例如,可使用Sn0X、Zn0X等金属氧化物.在这样的情况下,台阶复盖率也是可实用化的 [0085] However, since the ITO of high melting point as compared with the aluminum step coverage rate is good, even when connected via a deep hole will not cause a poor connection, Further, in addition to ITO, a metal oxide film may be used such a high Other transparent electrode material melting point, for example, may be used Sn0X, Zn0X other metal oxide. In this case, the step coverage ratio can also practical

[0086] 这样制造的背栅结构的TFT例如作为有源矩阵基板中象素部分的开关元件使用.还有,由ITO构成的电极22b成为用于连接外部端子(IC的输出引线等)的压焊区. [0086] Thus the back gate TFT structure fabricated for example as switching elements in an active matrix substrate of the pixel portion. Also, the electrode 22b made of ITO becomes an external terminal for connection (IC output leads, etc.) of the pressure welding area.

[0087](本制造方法的特征) [0087] (Characteristics of this manufacturing method)

[0088] 图7A〜图7F示出有关图1_图6中记述的本实施形态的TFT的制造工序.另一方面,图8A〜图8G示出对比例的TFT的制造工序.该对比例是为了使有关本实施形态的TFT的制造方法的特征更明确而由本专利发明者设想出来的,不是以往的例子. [0088] FIG 7A~ Figure 7F shows the relevant diagram 1_ FIG. 6 of the present embodiment described TFT manufacturing process. On the other hand, FIG 8A~ Figure 8G shows the comparative TFT manufacturing process. The comparative in order to bring the present embodiment of the manufacturing method of TFT characteristics clearer and conceived by the inventor of this patent, not a conventional example.

[0089] 对比例的图8A和图7A相同.12[0090] 图8A〜图8G中与图7A〜图7F相同的部分上标注相同的参照编号. [0089] The same Comparative Example 8A and 7A .12 [0090] FIG 8A~ Fig. 8G and FIG 7A~ FIG denoted by the same reference numerals to the same portions 7F.

[0091] 对比例的情况,如图8B所示,在形成漏极电极层之前,形成连接孔Kl,K2. [0091] Comparative case, as shown in Figure 8B, before forming the drain electrode layer, forming a connection hole Kl, K2.

[0092] 而且,如图8C所示形成源、漏电极层12a、12b以及相同材料构成的源、漏电极材料12c、12d. [0092] Further, as shown in Fig. 8C forming a source, a drain electrode layer 12a, the source 12b and the same material, the drain electrode material 12c, 12d.

[0093] 接着,如图8D所示形成ITO膜30. [0093] Next, an ITO film 30 shown in Figure 8D.

[0094] 接着,如图8E所示进行欧姆层10的中央部分的刻蚀(分离刻蚀). [0094] Next, as shown in the central portion of the etching performed (separation etching) the ohmic layer 10 8E.

[0095] 接着,如图8F所示形成保护膜40. [0095] Next, the protective film 40 is formed as shown in FIG. 8F.

[0096] 最后,如图8G所示,形成开口K3.由此,源、漏电极材料层12d的表面露出,形成用于连接外部连接端子的电极(压焊区). [0096] Finally, shown in Figure 8G, the formation of an opening K3. Thereby, the source, the surface of the drain electrode material layer 12d is exposed, to form an electrode (pressure pad) for connecting an external connection terminal.

[0097] 若依据这样的对比例的制造方法,则在图8B中的连接孔形成工序的基础上再加上图8G中的形成开口部分K3的工序,合计需要2次开口部分的形成工序. [0097] If the step portion K3 of the manufacturing method according to this ratio, the connection hole is formed in FIG. 8B coupled with the base in the step of Figure 8G opening is formed, requires twice the total opening portion forming step.

[0098] 与此相反,本实施形态的制造方法中,如图7E所示,一并形成开口16、18、20.艮口, 在贯通保护膜14及栅极绝缘膜6的重迭膜形成开口的同时,也对源、漏电极层12b上的保护膜14刻蚀图形,由此,1次开口形成工序即可.从而,能够削减I道曝光工序,与此相伴随,也将不需要光致抗蚀剂膜的淀积工序及其刻蚀工序.从而,合计缩短3道工序,即,简化了制造加工. [0098] In contrast, the manufacturing method in the present embodiment, shown in Figure 7E, collectively form an opening 16,18,20. Gen mouth, through the overlapping film and the protective film 14 formed on the gate insulating film 6 Meanwhile the opening, but also on the source, the drain electrode layer 12b the protective film 14 on the etched patterns, whereby, once the opening forming step can Thereby, I channel the exposure step can be reduced, along with this, also will not require photo-depositing step and an etching step of the resist film. Thus, the total shortening step 3, i.e., simplifies the manufacturing process.

[0099] 还有,本实施形态的制造方法中,在同一腔内可以连续地进行图7B所示的源、漏极电极层12a、12b的图形刻蚀(干法刻蚀)和图7C所示的欧姆接触层10的中央部分的刻蚀(干法刻蚀).即,通过在同一腔内依次更换刻蚀气体,能够连续地刻蚀. [0099] Further, the manufacturing method of this embodiment, the cavity may be continuously in the same manner as the source, the drain electrode layer 7B shown in Fig. 12a, 12b of the patterning (dry etching) and 7C are etching (dry etching) the central portion of the ohmic contact layer 10 is illustrated. That is, by sequentially replacing the etching gas in the same chamber, can be continuously etched.

[0100] 与此相反,对比例的情况下,在图8c的源、漏极电极层12a、12b的图形刻蚀(干法刻蚀)后,进行图8D的ITD膜30的湿法刻蚀,接着,进行图8E的欧姆层10中央部分的刻蚀(干法刻蚀).由于ITO膜不能用干法刻蚀加工,仅可进行湿法刻蚀加工,故不能够在一个腔内连续地进行图8C、图8D、图8E的各刻蚀工序.由此,在各工序都要进行基板的手工操作,作业麻烦. [0100] In contrast, under the comparative case, in the source, the drain electrode layer in FIG. 8c 12a, 12b of the patterning (dry etching), the ITD by wet etching film 30 of FIG. 8D , Next, the central portion 10 of FIG. 8E ohmic layer etching (dry etching). Since the ITO film can not be processed by dry etching, a wet etching process only, it is not possible in a continuous chamber performed 8C, the FIG. 8D, FIG. 8E each etching process. Thus, in each step must be done manually, the job troublesome substrate.

[0101] 还有,本实施形态的情况下,保护膜14必须存在于ITO膜22a、22b和源、漏电极12a、12b之间.这意味着在基板上的其它区域(未图示)可靠地把ITO膜构成的布线与用源、漏极电极同一材料构成的布线及电极电隔离. [0101] Further, the case of the present embodiment, the protective film 14 must be present on the ITO film 22a, 22b and the source, drain electrode 12a, between 12b. This means that in other regions on the substrate (not shown) reliably put wiring with ITO film and the source, the electrical wiring and the drain electrode of the same material in isolation.

[0102] 然而,对比例的情况下,ITO膜30和源、漏极电极10a、10b属于同一层.即,两者被重叠,在两者之间不存在保护膜.由此,在基板上其它区域(未图示),若异物存在,则尽管原本必须绝缘,但ITO膜构成的布线与用源、漏极电极同一材料构成的布线及电极有短路的危险.即,用本实施形态的制造方法形成的元件可靠性高. [0102] However, in the case of Comparative Example, ITO film 30 and the source, drain electrodes 10a, 10b belong to the same layer. That is, both are overlapped, the protection film does not exist between them. Accordingly, on the substrate Other regions (not shown), if foreign matter is present, even though the original must be insulated, but the ITO film with a wiring and source electrode wiring and drain electrodes of the same material are at risk of short circuit. That is, the present embodiment device manufacturing method for forming a high reliability.

[0103] 还有,由于对比例中在比较早的阶段形成ITO膜30(图8D),故在其后的工序中,存在由作为ITO的成分的铟(In)和锡(Sn)等引起的污染的可能性 [0103] Moreover, since Comparative relatively early stage in the formation of the ITO film 30 (FIG. 8D), so that in the subsequent step, by the presence of a component as ITO indium (In) and tin (Sn) caused by The possibility of contamination

[0104] 与此相对,本实施形态的制造方法中,由于ITO膜22a、22b在最后的工序中形成, 故由ITO成分的锡(Sn)等引起的污染的可能性少. [0104] In contrast, the present embodiment form of the manufacturing method, since the ITO film 22a, 22b is formed in the final step, it is less possibility of contamination from tin ITO component (Sn) caused by.

[0105] 这样,若依据本实施形态的制造方法,则能够缩短制造工序,而且能够制造可靠性高的元件. [0105] Thus, if the manufacturing method according to the present embodiment, it is possible to shorten the manufacturing process, but also a highly reliable element can be manufactured.

[0106](第2实施形态) [0106] (second embodiment)

[0107] 下面,参照图9〜图18说明本发明的第2实施形态.[0108] 图9示出有关本发明第2实施形态的有源矩阵基板的平面布局. [0107] Next, with reference to FIG 9~ Figure 18 illustrates a second embodiment of the present invention. [0108] Figure 9 shows a planar layout of the second embodiment related to the present invention, the active matrix substrate.

[0109] 图9的有源矩阵基板是在液晶显示装置中使用的.作为象素部分的开关元件及防止静电破坏用保护元件,使用由第1实施形态中说明过的制造方法制造的TFT. The active matrix substrate [0109] FIG. 9 is a liquid crystal display device used as a switching element of the pixel portion and to prevent electrostatic breakdown protective element, for use by the first embodiment through the manufacturing method of manufacturing the TFT.

[0110] 象素部分4000(图中,用虚线围起来的部分)由多个象素120构成,各象素构成为包含TFT (开关元件)3000. TFT3000设在扫描线52和信号线M的交叉点上. [0110] pixel portion 4000 (the figure, a portion enclosed by a dotted line) 120 constituted by a plurality of pixels, each pixel configured to include a TFT (switching element) 3000. TFT3000 provided on the scanning signal line 52 and the line M crossover point.

[0111] 信号线M、扫描线52的各端部分别设有压焊区160A、160B,这些压焊区和LC-COM 线180之间连接第1保护元件140A. 140B,上述压焊区和保护环100之间形成第2保护元件150AU50B.另外,LC-COM线180还经由银点压焊区连接对向电极. [0111] Signal line M, each end portion of the scanning lines 52 are respectively provided with a bonding pad 160A, 160B, the first protective element is connected between these bonding pads and LC-COM line 180 140A. 140B, and the pressing pad a second protective element 100 is formed between the ring 150AU50B protection. In addition, LC-COM line 180 is also connected to the electrode via a silver point pressure pads.

[0112] “压焊区160A. 160B”是用于连接键合引线和凸点电极(bump电极)或使用了聚酰亚胺带的电极等(外部端子)的电极. [0112] "160A. 160B pressure pad" is used to connect the bonding wire and the bump electrode (bump electrode) or using a polyimide tape or the like electrode (external terminal) of the electrode.

[0113] 还有,“LC-C0M线180”是给出作为液晶驱动基准的电位的线.公共电位LC-COM例如象图30所示的那样,设定在只比显示信号电压Vx的中点电位%低ΔΥ的电位处.g卩,如图四例示的那样,在象素部分的TFT3000中存在栅、源间电容Ces,受其影响在显示信号电压Vx和最终的保持电压Vs之间产生电位差AV.为补偿该电位差Δν,把比显示信号电压Vx的中点电位Vb低Δ V的电位取为共同的基准电位. [0113] There are, "LC-C0M line 180" is given as the liquid crystal driving reference potential line. Common potential LC-COM, for example as shown in Figure 30, as set at only the ratio of the display signal voltage Vx % at the low potential point potential of .g ΔΥ Jie, as illustrated in Figure IV, the presence of the gate in TFT3000 pixel portion, a source capacitances Ces, affected by the voltage Vx between the signal and displays the final sustain voltage Vs generating a potential difference AV. To compensate for this potential difference Δν, the ratio of the display signal voltage Vx midpoint potential Vb low Δ V potential is taken as a common reference potential.

[0114] 另外,图29中,X是信号线,Y是扫描线,Q表示液晶的等效电容,Cad表示保持电容.还有,图30中,Vx是供给到信号线X上的显示信号的电压,Vy是供给到扫描线Y上的扫描信号的电压. [0114] Further, Fig. 29, X is a signal line, Y is a scanning line, Q represents the equivalent capacitance of the liquid crystal, Cad represent storage capacitance. Further, Fig. 30, Vx is supplied to the signal line on the display signal X voltage, Vy is a voltage supplied to the scanning line Y of the scan signal.

[0115] 还有,“保护环100”是设在压焊区160Α、160Β外侧的线,作为液晶显示装置制造阶段中的静电措施. [0115] In addition, "the guard ring 100" is located in 160Α, 160Β outside wire bonding area, as the liquid crystal device manufacturing stage of static measures show.

[0116] LC-COM线180及保护环100都是共同电位线,从而,通过压焊区和这些线之间连接保护二极管能够使静电沿这些线释放. [0116] LC-COM line 180 and guard ring 100 are common potential line, which passes between the bonding area and these cable enables electrostatic discharge protection diodes along these lines.

[0117] 还有,保护环100如图27所示,在使TFT基板1300与对向基板(彩色滤波器基板)对粘后,在驱动用IC连接之前沿划线(SB)切断,而LC-COM线180是留在最终制品中的线.从而,在基板切断后到IC连接之前,能够用第1保护元件140保护象素部分的TFT 免遭静电破坏,从而,制品的可靠性提高. [0117] Further, the guard ring 100 shown in Figure 27, when the TFT substrate 1300 and the counter substrate (color filter substrate) after sticking, cutting off the driving IC is connected with the leading edge of the scribe line (SB), and the LC -COM line 180 is a line in the left in the final product. Therefore, after the substrate is cut before IC connection, can be used against electrostatic breakdown protective element 140 of the first TFT protection pixel portion, thereby improving reliability of products.

[0118] 还有,由于在最终制品中还留有保护二极管,故实际使用制品时的静电破坏强度也提高.进而,由于使用了TFT的保护二极管故容易控制阈值电压(Vth),还能够减少泄放电流.因此,即使在最终制品中留有二极管也不会有不良影响. [0118] Further, since in the final product has left the protection diode, so that the electrostatic breakdown strength of the article when the actual use is also improved. Further, since the TFT protective diode it is easy to control the threshold voltage (Vth), but also possible to reduce the leakage current. Therefore, even when leaving the diode in the final product will not be adversely affected.

[0119] 图IlA〜图IlC示出保护元件的具体结构例. [0119] Figure IlA~ Figure IlC shows a specific example of the structure protection elements.

[0120] S卩,如图IlA所示,保护元件构成为把连接第ITFT(Fl)的栅、漏极构成的MOS 二极管和连接第2TFT(F2)的栅.漏极构成的MOS 二极管相互反向并连.其等效电路为图IlB 所示. [0120] S Jie, as IlA, protective elements for the connection section ITFT (Fl) gate, MOS diode and connects the first 2TFT (F2) consisting of gate-drain. The drain MOS diode formed in opposite and is connected to its equivalent circuit shown in Fig IlB.

[0121] 从而,如图IlC所示那样,该保护元件在电流、电压特性中沿双向具有非线性.各二极管在加入低电压时成为高阻抗,加入高电压时成为低阻抗状态.另外,由于各二极管实质上是晶体管,流过电流的能力大,能够高速地吸收静电,因此保护能力高. [0121] Thus, as shown in FIG. IlC, the protective element along the current, a two-way non-linear voltage characteristic. Each diode at a low voltage is added into the high impedance, when a low voltage is added to the high impedance state. In addition, since Each diode is essentially the transistor, the current flowing through the large capacity, a high speed absorbing static electricity, and therefore a high protective capability.

[0122] 图10中示出图9的压焊区160A、160B周围静电保护元件的具体配置例. [0122] FIG. 10 shows a pressure pad 9 of FIG. 160A, 160B around the specific configuration example of the electrostatic protection element.

[0123] 第1保护元件140A由连接了栅、漏极间的薄膜晶体管M60及M62构成,同样,第1 保护元件140B由薄膜晶体管M40及M42形成.[0124] 第2保护元件150A、150B也一样,由薄膜晶体管M80、M82及M20、M22构成. [0123] The first protective element 140A by connecting the gate, thin-film transistors M60 and M62 constitute a drain between Similarly, a protective element 140B is formed by a thin film transistor M40 and M42. [0124] 2 protection element 150A, 150B also Like the thin film transistor M80, M82 and M20, M22 constitute.

[0125] 这些保护元件起到这样的作用,即在被加入正或负的过大浪涌电压时导通,高速地将该浪涌电压沿LC-COM线180或保护环100释放. [0125] These protective elements play such a role, that is, when it is added to the positive or negative voltage is turned too big surge, the surge voltage at high speed along the LC-COM line 180 or guard ring 100 is released.

[0126] 另外,配置在压焊区外侧的第2保护元件150除去静电保护功能外,还具有这样功能,即防止用保护环100短路各压焊区160而使得在阵列工序中不能进行最终检查.用图14说明该功能. [0126] In addition, pressure pads disposed on the outside of the second protective element 150 to remove static electricity protection, but also has this feature, which prevents short circuit protective ring 100 160 and each pad is in the array process can not make a final inspection . Figure 14 illustrates the use of the function.

[0127] 考虑如图14所示那样,在压焊区160A1上连接阵列试验器(具有放大器220)的探头,对象素部分的TFT(Ma)进行试验的情况. [0127] As shown in FIG. 14 to consider, in the connector array tester pressure pad 160A1 (having the amplifier 220) of the probe, the pixel portion TFT (Ma) of the test is carried out.

[0128] 这时,第2保护元件150A1及第2保护元件150A2维持高阻状态.从而,象素部分的TFT (Ma) TFT (Mb)电隔离.由此,可防止和其它晶体管的交调失真,能够仅对于所希望的TFT(Ma)进行试验. [0128] In this case, 150A1 and the second protective element second protective element 150A2 maintain a high impedance state. Thus, TFT pixel portion (Ma) TFT (Mb) electrically isolated. This prevents intermodulation and other transistors distortion, it is possible for only a desired TFT (Ma) test.

[0129] 还有,如图27所示,若完成了TFT基板1300的制造,则在定向膜的涂敷、研磨工序、密封材料(衬垫)涂敷工序、基板的对粘工序、分断工序、液晶注入及封装工序等各工序结束之后并在连接驱动用IC之前,沿划线(SB)切断除去保护环100. [0129] Further, shown in Figure 27, if the completion of the manufacture of the TFT substrate 1300, then in the step of coating the alignment film adhesive, polishing step, a sealing material (gasket) coating process, the substrate, the breaking step and before connecting drive IC, cut and removed along the dash (SB) after the end of each process and packaging process, such as a liquid crystal injection guard ring 100.

[0130] 然而,由于存在着连接LC-COM线180和压焊区160之间的第1保护元件140,因而,即使在连接驱动用的IC之前,也形成静电保护. [0130] However, due to the presence of the first protection element connected LC-COM line 180 and 160 between the pressure pad 140, therefore, even before connecting the driving IC, but also the formation of electrostatic protection.

[0131] 还有,最终制品中也留有第1保护元件,但由于使用了TFT的保护元件进行了正确的阈值控制,因而不必担心由于泄放电流等降低制品的可靠性. [0131] In addition, the final product also leave the first protective element, but the use of a protective element TFT could make a correct threshold value control, and therefore do not have to worry about leakage current, etc. due to reduced reliability of products.

[0132] 接着,用图12及图13说明图11所示的第1及第2晶体管(Fl、F2)的元件的结构 [0132] Next, FIG. 12 and FIG. 13 illustrates the structure of the first and second transistors (Fl, F2) shown in FIG. 11 of element

[0133] 本实施形态中,如图12所示,把由作为象素电极材料ITO构成的膜(ΙΤ0 膜)300. 320,330用作为栅极,漏极连接用布线. [0133] In the present embodiment, shown in Figure 12, the material of the film as the pixel electrode of ITO is formed (ΙΤ0 film) 300. 320, 330 used as a gate, a drain connection wirings.

[0134] 图13中示出对应于图12的平面布局中的各部分(A)-(F)的断面结构. [0134] FIG. 13 shows a layout view corresponding to the plane 12 of the respective sections (A) - (F) of the sectional structure.

[0135] 如图示那样,构成静电保护元件的第1薄膜晶体管Fl及第2薄膜晶体管F2都具有反交错结构(背栅结构). [0135] As illustrated, the first thin film transistor Fl F2 and second thin film transistors constituting the electrostatic protection element having an inverted staggered structure (the back-gate structure).

[0136] S卩,在玻璃基板400上形成栅极电极层410、420、430、440,在其上面形成栅极绝缘膜450,形成本征非晶硅层470、472,介以η型欧姆层480形成漏极电极(源极电极)层490,形成保护膜460以便复盖这些层,而且,用由作为象素电极材料的ITO构成的膜(ΙΤ0 膜)300,320,330进行栅、漏极间的连接. [0136] S Jie, on the glass substrate 400 is formed a gate electrode layer 410,420,430,440, thereon a gate insulating film 450 is formed, to form an intrinsic amorphous silicon layer 470, 472, via an η-type ohmic layer 480 forming a drain electrode (source electrode) layer 490, a protective film 460 is formed so as to cover these layers, and, with a film made of ITO as the pixel electrode material formed (ΙΤ0 film) 300,320,330 inter-gate, drain connection.

[0137] ITO膜300、320、330经由贯通栅极电极层上的栅极绝缘膜450以及保护膜460的2层膜的连接孔和贯通漏极电极层490上的保护膜460的连接孔,连接栅极电极层和漏极电极层. [0137] ITO films 300,320,330 via the connection hole 450 and a protective film 490 on the gate insulating film through a gate electrode layer and the through hole connecting the drain electrode layer of the protective film 460 460 2-layer film, connected to the gate electrode layer and a drain electrode layer.

[0138] 这种情况下,由于ITO是高熔点,与铝等相比台阶复盖率特性优良,因此,即使经由贯通2层膜的深连接孔也可确保良好的连接. [0138] In this case, since the ITO is high melting point, excellent step coverage compared to aluminum, rate characteristic, therefore, even if the two-layer film via a through-hole deep connection also ensures a good connection.

[0139] 还有,如在第1实施形态中说明的那样,对于栅极、漏极的连接孔在用于连接外部连接端子的开口的形成(压焊区露出)工序中同时形成,故能够缩短工序数. [0139] Also, as in the first embodiment described above, the gate, drain connection hole is formed in the opening for connecting the external connection terminals (bonding pads exposed) step formed simultaneously, it is possible to shorten the number of steps.

[0140] 以上,说明以ITO膜作为布线使用,形成保护二极管的例子.但ITO膜作为布线的利用并不限于该例,还能够例如在图15所示形态中加以利用. [0140] the above described ITO film as a wiring used to form the protective diode example, but the use of the ITO film as the wiring is not limited to this example, also can be used for example in the form shown in Fig. 15.

[0141] S卩,图15中,ITO膜342被用于形成压焊区160近旁中的交叉布线342.[0142] 所谓“交叉布线”是在把液晶显示装置的内部布线导出到密封材料520的外侧之际,为谋求由厚的层间绝缘膜进行的布线保护,把位于上层的布线连接到下层布线上并迂回导出到外部而使用的布线. [0141] S Jie, FIG. 15, ITO film 342 is used to form a bonding pad 160 in the vicinity of the cross wiring 342. [0142] The so-called "cross wiring" in the internal wiring of the liquid crystal display device is exported to the sealing material 520 outside of the occasion, in order to seek the protection from the wiring between the thick interlayer insulating film, and the wiring is connected to the upper level of the lower layer wiring and the wiring to the outside detour export used.

[0143] 即,ITO膜342连接漏极电极层490和与栅极电极相同材料构成的层(栅极电极材料层)412.由此,栅极电极材料层412的导出外部的部分由栅极绝缘膜450及保护膜460 的二者保护,提高了可靠性. [0143] That is, ITO film 342 connected to the drain electrode layer 490 and the gate electrode of the same material layer (gate electrode material layer) 412. Thus, to the outside of the portion of the gate electrode material layer 412 by a gate insulating film 450 and the protection of both the protective film 460, and improve reliability.

[0144] 另外,图15中,参照编号500和502示出定向膜,500表示密封材料,540表示对向电极,562表示玻璃基板,1400表示液晶.还有,压焊区160上连接有例如键合引线600.有时也连接使用了凸点电极和聚酰亚胺片的电极层,代替该键合弓I线. [0144] In addition, FIG. 15, reference numerals 500 and 502 shows the orientation film, 500 denotes a sealing material, 540 represents a counter electrode, 562 denotes a glass substrate, 1400 denotes a liquid crystal. Further, the pressure pad 160 is connected to e.g. bonding wire 600. The connection is sometimes used bump electrode and an electrode layer of polyimide sheet, instead of the bonding wire bow I.

[0145] ITO膜能够在其它各种位置作为布线使用,为了易于了解而例示ITO膜能够作为布线使用的位置,则如图16所示. [0145] ITO film can be used as wiring in a variety of other locations, for ease of understanding of the ITO film can be illustrated as the position of the wiring used, as shown in Fig 16.

[0146] 图16中用粗实线示出了ITO膜. [0146] FIG. 16 by a thick solid line shows the ITO film.

[0147] 位置Al〜A3中的ITO膜作为用于形成保护元件的布线使用,位置A4中作为用于连接扫描线52和压焊区160B的布线使用,位置A5中作为图15所示的交叉布线使用. Wiring [0147] position Al~A3 the ITO film as used for forming the protective element, the position A4, as used to connect the scan line 52 and the bonding pads of the wiring used 160B, position A5 as shown in FIG. 15 cross wiring use.

[0148] 还有,位置A6中,作为用于连接水平方向的LC-COM线和垂直方向的LC-COM线的布线使用.即,由于水平方向的LC-COM线由栅极材料形成,垂直方向的LC-COM线用源极材料形成,故需要用ITO连接两者. [0148] Further, the position A6, the wiring as LC-COM line for connecting the horizontal direction and the vertical direction of the LC-COM line use. That is, since the LC-COM line in the horizontal direction is formed of gate material, vertical LC-COM line with the direction of the source material, they need to connect with both ITO.

[0149] 另外,图16的位置A6中,银点压焊区110能够和水平方向的LC-COM线或者垂直方向的LC-COM线中任一条线在同一工序中形成为一体,在这样形成的情况下,可以经由ITO 把不和银点压焊区110形成为一体的LC-COM线(水平、垂直的任一条)与银点压焊区110 连接. [0149] Further, in FIG position A6 16, LC-COM line Silver point pressure pad 110 and the horizontal direction can LC-COM line or the vertical direction in any one line is formed in the same process as a whole, in the thus formed Under the circumstances, can not via the ITO and silver spot bonding region 110 is formed as one of the LC-COM line (horizontal, vertical any one) is connected with a silver point pressure pad 110.

[0150] 下面,用图17、图18说明象素部分中各象素的结构. [0150] Next, using FIG. 17, FIG. 18 illustrates the structure of the pixel portion of each pixel.

[0151] 图17示出象素部分的平面布局. [0151] Figure 17 shows a planar layout of the pixel portion.

[0152] 配置着连接到扫描线52及信号线M上的、起到开关元件作用的TFT (构成为含有栅极电极720、漏极电极740、未掺入杂质的本征非晶硅层47,漏极电极740上连接着象素电极(ΙΤ0)340.图中,Κ2是连接孔,Cad表示保持电容.保持电容Cad由邻接的栅极布线和被延长的象素电极的重迭构成. [0152] disposed connected to the scan line 52 and the signal on line M, play the role of a switching element of TFT (the gate electrode 720 is configured to contain, the drain electrode 740, unincorporated impurities intrinsic amorphous silicon layer 47 , the drain electrode 740 is connected to the pixel electrode (ΙΤ0) 340. figure, Κ2 connecting hole, Cad represent storage capacitance. Cad by overlapping the retention capacitor adjacent gate wiring and the pixel electrode being extended configuration.

[0153] 图18示出图17中沿BB经的断面结构.成为和图15中说明过的结构同样的断面结构. [0153] Figure 18 shows a sectional structure along BB in Fig. 17 by the. Became explained in Figure 15 and the sectional structure of the same structure.

[0154](第3实施形态) [0154] (third embodiment)

[0155] 用图19-图沈说明有关上述第2实施形态的TFT基板的制造方法. [0155] FIG 19- FIG sink with the manufacturing method of the above described second embodiment of the TFT substrate.

[0156] 各图中,左侧是形成象素部分的开关晶体管的区域,中央部分是形成保护元件的区域,右侧是连接外部连接端子的区域(压焊区). [0156] the figures, the left region of the switching transistor of the pixel portion is formed, the central portion of the region forming the protective element, the right side is connected to an external terminal region (bonding pad) is connected.

[0157] (1)如图19所示,首先,用光刻技术在玻璃基板(无碱基板)400上形成例如由1800 A左右的厚度Cr (铬)构成的电极720、722、900、902、904. [0157] (1) shown in Figure 19, first of all, with a photolithographic technology such as an electrode thickness of about 1800 A by Cr (chromium) formed 720,722,900 400 is formed on a glass substrate (non-alkali substrate), 902, 904.

[0158] Cr的淀积用磁控管溅射装置在50mTorr的减压下进行.还有,Cr的加工由使用了Cl2族气体的干法刻蚀法进行. [0158] Cr is deposited by magnetron sputtering apparatus under a reduced pressure of 50mTorr. There, Cr are processed by using a family of Cl2 gas dry etching method.

[0159] 参照编号720、900是构成TFT的栅极电极的层(栅极电极层),参照编号722是相当于图17所示的扫描线52的层.还有,参照编号902、904是由和栅极电极层相同材料构成的层(栅极电极材料层). [0159] The reference numeral 720,900 TFT constituting the gate electrode layers (gate electrode layer), reference numeral 722 is a scan line layer 52 shown in Fig. 17 corresponds to. Further, reference numeral 902, 904 are layer (gate electrode material layer) and the gate electrode layer of the same material.

[0160] (2)接着,如图20所示,用等离子CVD法,连续地生成由氮化硅膜SiNx等构成的栅极绝缘膜910、未掺入杂质的本征非晶硅膜以及η型硅膜(欧姆层),接着,依据使用了SF6 族的刻蚀气体,把本征非晶硅膜及η型硅膜(欧姆层)刻蚀图形. [0160] (2) Next, as shown in Figure 20, with a plasma CVD method, continuously formed a gate insulating film 910 a silicon nitride film SiNx or the like, the incorporation of impurities is not an intrinsic amorphous silicon film, and η type silicon film (ohmic layer), then, based on the use of the etching gas SF6 family, the intrinsic amorphous silicon film and η-type silicon film (ohmic layer) etched pattern.

[0161] 由此,形成岛状的本征非晶硅层475、920以及η型硅层(欧姆层)477、922. [0161] Thus, the intrinsic amorphous silicon layer to form an island of 475,920 and η-type silicon layer (ohmic layer) 477,922.

[0162] 栅极绝缘膜910的厚度例如是4000义左右,本征硅层475. 920的厚度例如是3000久左右,欧姆层477、922的厚度例如是500人左右. Thickness [0162] The gate insulating film 910, for example, 4000 or so defined, the thickness of the intrinsic silicon layer 475.920 example, approximately 3000 for a long time, for example, the thickness of the ohmic layer 477,922 is about 500.

[0163] 该工序中的特征在于不形成对于栅极绝缘膜的连接孔.从而,不再需要光致抗蚀剂膜的涂敷工序、曝光工序、刻蚀除去工序这3道工序,谋求得到工序数的缩短. [0163] This step is characterized by not forming a gate insulating film for the connection hole. Accordingly, no longer need to photoresist film coating step, exposure step, an etching step of removing these three steps, seeking to obtain the number of steps reduced.

[0164] (3)接着,如图21所示,用溅射法及光刻法形成例如由Cr(铬)构成的1500义左右的源、漏电极层740a、740b、930a、930b. [0164] (3) Next, as shown in Fig.21, is formed by a sputtering method and a photolithography method, for example by a defined source 1500 Cr (chromium) formed around the drain electrode layer 740a, 740b, 930a, 930b.

[0165] (4)接着,以源、漏电极层740a、740b、930b、930b为掩膜,用刻蚀法除去欧姆层477,922的中央部分,进行源极和漏极的分离. [0165] (4) Next, the source, drain electrode layers 740a, 740b, 930b, 930b as a mask, the central portion of the ohmic layer is removed by etching 477,922, separation of the source and drain.

[0166] 在同一干法刻蚀装置的腔内连续地进行图21所示的源.漏电极层的图形化和图22所示的源、漏极的分离刻蚀.S卩,首先,用CL族的刻蚀气体进行源、漏极电极层740a、 740b.930a.930b的加工,然后把刻蚀气体换为SF6族的气体,进行欧姆层477、922的中央部分的刻蚀.这样,由于连续地使用干法刻蚀,简化了制造作业. [0166] source 21 is continuously performed in the chamber shown in Fig same dry etching apparatus. Source, drain separation etching .S Jie drain electrode layer 22 shown in graphical and FIG, first of all, with CL family etching gas source, 740a, 740b.930a.930b processing drain electrode layer, and then the etching gas changed to SF6 gas family, etching the central portion of the 477,922 ohmic layer. Thus, due to the continuous use of dry etching, simplifies the manufacturing operation.

[0167] (5)接着,如图23所示,用等离子CVD法形成保护膜940.该保护膜例如是2000 A 左右的氮化硅膜SiNx. [0167] (5) Next, as shown in Figure 23, with a plasma CVD method to form a protective film 940. The protective film is, for example, about 2000 A silicon nitride film SiNx.

[0168] (6)接着,如图M所示,用SF6族的刻蚀气体选择性地刻蚀保护膜940. S卩,在形成压焊区的开口160的同时,形成连接孔CPl及连接孔K8、K10. [0168] (6) Next, as shown in FIG M, etching with SF6 gas family selectively etching the protective film 940. S Jie, while an opening is formed in the pressure pad 160, and connected to form a connection hole CPl hole K8, K10.

[0169] 开口160及连接孔CPl是贯通栅极绝缘膜910及保护膜940的重迭膜而形成的开口,连接孔K8、KlO是仅贯通保护膜940的开口. [0169] opening 160 and the opening hole CPl connection is through a gate insulating film 910 and the protective film formed by overlapping film 940, the connection hole K8, KlO is only through the opening 940 of the protective film.

[0170] 这种情况下,栅极电极材料层902、904在选择孔CP1、开口160的形成之际分别起到刻蚀中止层的作用,源、源极电极740a、930b分别起引连接孔K8、KlO形成之际的刻蚀中止层的作用. [0170] In this case, the gate electrode material layer 902, 904, act to choose holes CP1, an opening 160 is formed on the occasion of the role of an etching stopper layer, respectively, the source, the source electrode 740a, 930b, respectively, lead from the connecting hole K8, KlO effect on the occasion of the etch stop layer.

[0171] (7)接着,如图25所示,用磁控管溅射装置以500义左右的厚度淀积ITOandium Tin Oxide)膜,用HC1/HN03/H20的混合液刻蚀,加工成预定的图形.由此完成有源矩阵基板.图25中,参照编号950是由ITO构成的象素电极,参照编号952是构成保护二极管一部分的ITO构成的布线,参照编号%4是用于连接外部端子的由ITO构成的电极(压焊区). [0171] (7) Next, shown in Figure 25, with the magnetron sputtering apparatus to a thickness of about 500 defined deposition ITOandium Tin Oxide) film, is etched with a mixture of HC1 / HN03 / H20, and processed into a predetermined graphics. The active matrix substrate is thus completed. FIG. 25, reference number 950 is a pixel electrode made of ITO, reference numeral 952 is a part of the ITO constituting the wiring protection diode configuration, reference numeral 4 is used to connect an external% electrode terminals made of ITO (pressure pad).

[0172] 由于把台阶复盖率好的ITO作为布线使用,故确保良好的电连接.作为象素电极材料,也可以使用金属氧化物这样高熔点的其它透明电极材料.例如,可以使用Sn0X、Zn0X 等金属氧化物. [0172] Because of the good step coverage rate using ITO as the wiring, so that to ensure a good electrical connection. As the pixel electrode material, but also other transparent electrode material may be used such a high melting point metal oxide. For example, Sn0X, Zn0X other metal oxides.

[0173] 还有,如从图25所知,在ITO层950、952和源、漏极电极740a、740b、930a、930b之间必须介以保护膜940.这意味着在基板上的布线区域(未图示)中可靠地电分离由ITO 构成的布线层和源、漏极电极材料层.从而,不必担心因异物引起两者的短路. [0173] Also, as known from Fig. 25, 950, 952 between the ITO layer and source, drain electrodes 740a, 740b, 930a, 930b to be referred to the protective film 940. This means that the wiring area on a substrate (not shown) are electrically separated securely wiring layer and the source, the drain electrode material layer is made of ITO. Thus, the foreign body without fear of causing a short circuit between the two.

[0174] 还有,本制造方法中由于在最后的工序(图25)中形成ITO膜,故不必担心由作为ITO成分的锡(Sn)、铟(In)引起的污染. [0174] Further, the present manufacturing method because of the ITO film formed in the final step (FIG. 25), it is not necessary to worry about contamination by ITO component as tin (Sn), indium (In) caused.

[0175] 这样,若依据本实施形态的制造方法,则能够缩短有源矩阵基板的制造工序,而且能够安装对于防止静电实施了足够的措施的可靠性高的薄膜电路. [0175] Thus, if the manufacturing method according to the present embodiment, it is possible to shorten the manufacturing process of the active matrix substrate, and can prevent static installation for the implementation of adequate measures highly reliable thin film circuit.

[0176] 另外,图25中,直接把ITO膜952、卯4连接到栅极电极层902及栅极电极材料层904上,但也能够经由钼(Mo)、钽(Ta)、钛(Ti)等缓冲层连接两者. [0176] Further, Fig. 25, directly to the ITO film 952, d 4 is connected to the gate electrode layer 902 and the gate electrode material layer 904, but it is possible via a molybdenum (Mo), tantalum (Ta), titanium (Ti ) such as a buffer layer to connect the two.

[0177] 下面,说明使用完成了的有源矩阵基板组装液晶显示装置的工序. [0177] Next, the device is used to complete the process of assembling the active matrix liquid crystal display substrate.

[0178] 如图28所示,把对向基板1500和TFT基板1300粘在一起,在图27所示那样的单元分断工序后,进行液晶的封入,然后,连接驱动用IC,进而如图观所示那样,经过使用偏光板1200、1600以及背景光源1000的组装工序,完成有源矩阵型液晶显示装置. [0178] shown in Figure 28, the opposing substrate 1500 and the TFT substrate 1300 stick together, as a unit after the breaking process shown in FIG. 27, the liquid crystal is filled, and then, connected to the drive IC, and then as shown in View as shown, through the use of a polarizing plate 1200, and 1000 background light assembly process, an active matrix type liquid crystal display device.

[0179] 图沈中示出有源矩阵型液晶显示装置主要部分的断面图.图沈中,在与图15、图18等前面示出的附图相同的位置处标注相同的参照编号. [0179] shown in FIG Shen active matrix type liquid crystal display device cross sectional view of a main part of Figure sink in, at a position the same with the previous drawings FIG. 15, FIG. 18 and the like shown denoted by the same reference numerals.

[0180] 图沈中,左侧是有源矩阵部分,中央是保护元件(静电保护二极管)形成区域,右侧是压焊区部分.[0181 ] 在压焊区部分,在由ITO构成的电极(压焊区)954上经各向异性导电膜500连接液晶的驱动用LC5500的输出引线5200.参照编号5100是导电粒子,参照编号5300是胶片带,参照编号MOO是密封用的树脂. [0180] Figure Shen, the left side is an active matrix part, is to protect the central element (electrostatic protection diode) forming region, the right is the pad part. [0181] In the pad part, electrodes made of ITO (bonding pads) 954 on the anisotropic conductive film 500 is connected via the liquid crystal driving LC5500 output lead 5200. The reference numeral 5100 is the conductive particles, reference numeral 5300 is a film strip, reference numeral MOO is sealed with a resin.

[0182] 图沈中,作为驱动用IC的连接方法采用使用带载的方式(TAB),而也可以采取其它方式,例如COG (Chip On Glass)方式. [0182] FIG. Shen, as the connection method using the drive IC manner using tape carrier (TAB), but can also take other ways, for example, COG (Chip On Glass) manner.

[0183] 本发明不限于上述实施形态,也可以变形使用了利用正交错结构的TFT的场合.还有,作为象素电极材料,也可以使用ITO之外的金属氧化物这样高熔点的其它透明电极材料.例如,可以使用Sn0X、Zn0X等金属氧化物.这种情况下,台阶复盖率也可达到实用化 [0183] The present invention is not limited to the above embodiments, may be modified using a staggered structure TFT with n the case. Further, as the pixel electrode material, may also be used other than the ITO transparent metal oxide such high melting point electrode materials. For example, Sn0X, Zn0X other metal oxide. In this case, the step coverage ratio can be put to practical use

[0184] 若把本实施例的液晶显示装置作为个人计算机等机器中的显示装置使用,则制品的价值将会提高。 [0184] If the liquid crystal display device of the present embodiment is a personal computer or the like as a display device using the machine, then the product value will increase. 18 18

Patent Citations
Cited PatentFiling datePublication dateApplicantTitle
US585882318 Dec 199612 Jan 1999Semiconductor Energy Laboratory Co., Ltd.Semiconductor circuit for electro-optical device and method of manufacturing the same
Non-Patent Citations
Reference
1CN 1030144 A,全文.
Classifications
International ClassificationH01L27/02, G02F1/1362, H01L27/12, H01L23/522, H01L23/532
Cooperative ClassificationH01L2924/13091, H01L27/0255, G02F1/136204, H01L27/0266, G02F2202/103, H01L2224/48463
European ClassificationG02F1/1362A, H01L27/02B4F2, H01L27/02B4F6
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