CN101369553B - High-density plasma trench filling method for reducing gas-phase core formation defect - Google Patents
High-density plasma trench filling method for reducing gas-phase core formation defect Download PDFInfo
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Abstract
A method for filling a high-density plasma groove reducing gas phase nucleation defects, which comprises firstly providing substrates having the groove in the reaction chamber; then performing a firstdeposition step, partly filling dielectric materials in the groove; performing etching step, partly removing the dielectric materials in the groove; performing a second deposition step, partly fillingdielectric materials in the groove, wherein reaction gases used in the second deposition step comprise carrier gas, oxygen-containing gas, silicon-containing gas and hydrogen-containing gas, and carr ying the carrier gas and the oxygen-containing gas into the reaction chamber, after starting a radio frequency power supply for a long time, then carrying the silicon-containing gas and the hydrogen-containing gas into the reaction chamber.
Description
Technical field
The invention relates to a kind of semiconductor technology, and particularly relevant for a kind of high-density plasma trench embankment method that reduces the gas-phase nucleation defective.
Background technology
Along with the progress of semiconductor technology, size of component is also constantly dwindled and is entered in the field of deep-sub-micrometer, even the scope of fine dimension more.Therefore, element and interelement isolation then become quite important, with the phenomenon that prevents that adjacent element is short-circuited.In general, can add one deck separator at interelement, more general technology be the localized oxidation of silicon method (Local Oxidation of Silicon, LOCOS).Yet the localized oxidation of silicon method still has multinomial shortcoming, comprises the relevant issues that generation derived by stress, and is formed at beak district around the isolation structure (Bird ' s Beak) etc.Wherein, the formation in beak district is the most unfavorable to the lifting of element integrated level.Therefore, the method for often using now then is fleet plough groove isolation structure (Shallow Trench Isolation, STI) technology.
The manufacture method of fleet plough groove isolation structure mainly is that filled dielectric material forms as separator in groove again form groove in substrate after.Generally speaking, industry is more often used high-density plasma (High Density Plasma at present, HDP) chemical vapour deposition technique (Chemical Vapor Deposition, CVD), carry out the filling (gapfill) of separator, employed dielectric material then be silicon dioxide (Silicon Dioxide, SiO2).But when the technology live width is reduced, the depth-to-width ratio of gash depth and width (Aspect Ratio, AR) can with increase.Therefore, separator just is easy to generate hole (Void) when filling, and degree of difficulty also thereby increase.So, in the fleet plough groove isolation structure fill process of 90nm and time 90nm, just develop with deposition-etching-deposition (Deposition-Etch-Deposition, DED) etc. multiple step (Multi-step) fill process mode obtains high-aspect-ratio (AR) and imperforate fleet plough groove isolation structure (STI).
Yet in above-mentioned multiple step fill process, its shortcoming is when etching step switches to deposition step, because the reacting gas conversion causes plasma unstable, therefore can produce a large amount of gas-phase nucleations (Gas Phase Nucleation, GPN) defective.The gas-phase nucleation defective causes the outstanding and scratch product of fleet plough groove isolation structure except meeting, and reduces outside the reliability of element, simultaneously also easily attached to becoming pollutant sources on the reaction chamber wall.Especially now semiconductor technology has entered nanometer technology, and the tolerance of the pollution that is caused for the gas-phase nucleation defective is lower.
Summary of the invention
Purpose of the present invention is exactly in that a kind of high-density plasma trench embankment method that reduces the gas-phase nucleation defective is provided, and in the multiple step fill process of groove, alleviates the phenomenon that gas-phase nucleation takes place in the reative cell, and then reduces the gas-phase nucleation defective.
The present invention proposes a kind of high-density plasma trench embankment method that reduces the gas-phase nucleation defective, comprises the following steps.At first, provide substrate in reative cell, and have groove in this substrate.Then, carry out first deposition step, in groove, partly insert dielectric material.Then, carry out etching step, partly remove the dielectric material in the groove.Afterwards, carry out second deposition step, in groove, partly insert dielectric material, wherein employed reacting gas comprises carrier gas, oxygen-containing gas, silicon-containing gas and hydrogen-containing gas in second deposition step, and, be written into silicon-containing gas and hydrogen-containing gas again to reative cell being written into carrier gas and oxygen-containing gas to reative cell and open radio-frequency power supply after a period of time.
According to the high-density plasma trench embankment method of the described minimizing gas-phase nucleation of embodiments of the invention defective, the method comprises that also the repetition etching step and second deposition step fill up groove up to dielectric material.
High-density plasma trench embankment method according to the described minimizing gas-phase nucleation of embodiments of the invention defective, the employed reacting gas of above-mentioned first deposition step comprises carrier gas, oxygen-containing gas, silicon-containing gas and hydrogen-containing gas, and, be written into silicon-containing gas and hydrogen-containing gas again to reative cell being written into carrier gas and oxygen-containing gas to reative cell and open radio-frequency power supply after a period of time.
According to the high-density plasma trench embankment method of the described minimizing gas-phase nucleation of embodiments of the invention defective, above-mentioned carrier gas can be inert gas.
High-density plasma trench embankment method according to the described minimizing gas-phase nucleation of embodiments of the invention defective, in above-mentioned second deposition step, also be included in and be written into carrier gas and oxygen-containing gas to reative cell and open radio-frequency power supply after a period of time, be written into silicon-containing gas earlier, and then be written into hydrogen-containing gas to reative cell.
High-density plasma trench embankment method according to the described minimizing gas-phase nucleation of embodiments of the invention defective, in above-mentioned second deposition step, be written into silicon-containing gas to reative cell after, to being written into the time interval of hydrogen-containing gas before to the reative cell for more than or equal to 1 second.
High-density plasma trench embankment method according to the described minimizing gas-phase nucleation of embodiments of the invention defective, in above-mentioned second deposition step, be written into silicon-containing gas to reative cell after, be 1 second～4 seconds to being written into the time interval of hydrogen-containing gas before to the reative cell.
According to the high-density plasma trench embankment method of the described minimizing gas-phase nucleation of embodiments of the invention defective, in above-mentioned second deposition step, be written into hydrogen-containing gas to reative cell in the cumulative mode of flow.
According to the high-density plasma trench embankment method of the described minimizing gas-phase nucleation of embodiments of the invention defective, above-mentioned silicon-containing gas can be silane gas.
According to the high-density plasma trench embankment method of the described minimizing gas-phase nucleation of embodiments of the invention defective, the employed reacting gas of above-mentioned etching step comprises fluorochemical and hydrogen-containing gas.
According to the high-density plasma trench embankment method of the described minimizing gas-phase nucleation of embodiments of the invention defective, above-mentioned fluorochemical comprises nitrogen fluoride, perfluoroalkane compound, sulfur fluoride.
In the high-density plasma trench embankment method of above-mentioned minimizing gas-phase nucleation defective, because when etching step switches to second deposition step, prior to being written into carrier gas, oxygen-containing gas in the reative cell after a period of time, open radio-frequency power supply and make the plasma in the reative cell reach stable state, import silicon-containing gas and hydrogen-containing gas again.Therefore deposition reaction can be carried out under stable status, and can reduce the gas-phase nucleation defective.And, because the etching step and second deposition step are that coordination carries out in same reaction board.Therefore, can simplify technology effectively and shorten the process time.
The present invention proposes a kind of high-density plasma trench embankment method that reduces the gas-phase nucleation defective, comprises the following steps.At first, provide substrate, have groove in this substrate.Then, carry out first deposition step, in groove, partly insert dielectric material.Then, carry out etching step, partly remove the dielectric material in the groove.Afterwards, carry out second deposition step, in groove, partly insert dielectric material, wherein employed reacting gas comprises carrier gas, oxygen-containing gas, silicon-containing gas and hydrogen-containing gas in second deposition step, and, be written into hydrogen-containing gas again to reative cell being written into carrier gas, oxygen-containing gas, silicon-containing gas to reative cell and open radio-frequency power supply after after a while.
According to the high-density plasma trench embankment method of the described minimizing gas-phase nucleation of embodiments of the invention defective, the method comprises that also the repetition etching step and second deposition step fill up groove up to dielectric material.
High-density plasma trench embankment method according to the described minimizing gas-phase nucleation of embodiments of the invention defective, the employed reacting gas of above-mentioned first deposition step comprises carrier gas, oxygen-containing gas, silicon-containing gas and hydrogen-containing gas, and, be written into hydrogen-containing gas again to reative cell being written into carrier gas, oxygen-containing gas, silicon-containing gas to reative cell and open radio-frequency power supply after after a while.
According to the high-density plasma trench embankment method of the described minimizing gas-phase nucleation of embodiments of the invention defective, above-mentioned carrier gas can be inert gas.
According to the high-density plasma trench embankment method of the described minimizing gas-phase nucleation of embodiments of the invention defective, above-mentioned silicon-containing gas can be silane gas.
According to the high-density plasma trench embankment method of the described minimizing gas-phase nucleation of embodiments of the invention defective, the employed reacting gas of above-mentioned this etching step comprises fluorochemical and hydrogen-containing gas.
According to the high-density plasma trench embankment method of the described minimizing gas-phase nucleation of embodiments of the invention defective, above-mentioned fluorochemical comprises nitrogen fluoride, perfluoroalkane compound, sulfur fluoride.
High-density plasma trench embankment method according to the described minimizing gas-phase nucleation of embodiments of the invention defective, in above-mentioned second deposition step, be written into silicon-containing gas to reative cell after, to being written into the time interval of hydrogen-containing gas before to the reative cell for more than or equal to 1 second.
High-density plasma trench embankment method according to the described minimizing gas-phase nucleation of embodiments of the invention defective, in above-mentioned second deposition step, be written into silicon-containing gas to reative cell after, be 1 second～4 seconds to being written into the time interval of hydrogen-containing gas before to the reative cell.
According to the high-density plasma trench embankment method of the described minimizing gas-phase nucleation of embodiments of the invention defective, in above-mentioned second deposition step, be written into hydrogen-containing gas to reative cell in the cumulative mode of flow.
In the high-density plasma trench embankment method of above-mentioned minimizing gas-phase nucleation defective, because when etching step switches to second deposition step, prior to being written into carrier gas, oxygen-containing gas and silicon-containing gas in the reative cell and opening radio-frequency power supply through after a while, after making plasma in the reative cell reach stable state, import hydrogen-containing gas again.Because silicon-containing gas dissociated fully in reative cell in advance, so deposition reaction can carry out under stable status, and can reduce the gas-phase nucleation defective.And, because the etching step and second deposition step are that coordination carries out in same reaction board.Therefore, can simplify technology effectively and shorten the process time.
The present invention proposes a kind of high-density plasma trench embankment method that reduces the gas-phase nucleation defective, comprises the following steps.At first, provide substrate, have groove in this substrate.Then, carry out first deposition step, in groove, partly insert dielectric material.Then, carry out etching step, partly remove the dielectric material in the groove.Then, carry out second deposition step, partly insert dielectric material in groove, wherein employed reacting gas comprises carrier gas, oxygen-containing gas and silicon-containing gas in second deposition step.Carry out the 3rd deposition step afterwards, partly insert dielectric material in groove, wherein employed reacting gas comprises carrier gas, oxygen-containing gas, silicon-containing gas and hydrogen-containing gas in the 3rd deposition step.
According to the high-density plasma trench embankment method of the described minimizing gas-phase nucleation of embodiments of the invention defective, this method comprises that also repetition etching step, second deposition step and the 3rd deposition step fill up groove up to dielectric material.
According to the high-density plasma trench embankment method of the described minimizing gas-phase nucleation of embodiments of the invention defective, the employed reacting gas of above-mentioned first deposition step comprises carrier gas, oxygen-containing gas, silicon-containing gas and hydrogen-containing gas.
According to the high-density plasma trench embankment method of the described minimizing gas-phase nucleation of embodiments of the invention defective, above-mentioned carrier gas can be inert gas.
According to the high-density plasma trench embankment method of the described minimizing gas-phase nucleation of embodiments of the invention defective, above-mentioned silicon-containing gas can be silane gas.
According to the high-density plasma trench embankment method of the described minimizing gas-phase nucleation of embodiments of the invention defective, the employed reacting gas of above-mentioned etching step comprises fluorochemical and hydrogen-containing gas.
According to the high-density plasma trench embankment method of the described minimizing gas-phase nucleation of embodiments of the invention defective, above-mentioned fluorochemical comprises nitrogen fluoride, perfluoroalkane compound, sulfur fluoride.
In the high-density plasma trench embankment method of above-mentioned minimizing gas-phase nucleation defective, owing between etching step and the 3rd deposition step, be provided with second deposition step.Utilize second deposition step to make the plasma in the reative cell reach stable state.Therefore, be directly switch into the 3rd deposition step from second deposition step after, the 3rd deposition step can carry out under stable status, and can reduce the gas-phase nucleation defective.
State with other purposes, feature and advantage and can become apparent on the present invention for allowing, preferred embodiment cited below particularly, and cooperate appended graphicly, be described in detail below.
Description of drawings
Fig. 1 illustrate is the flow chart of the high-density plasma trench embankment method of the minimizing gas-phase nucleation defective of first embodiment of the invention.
Fig. 2 A-Fig. 2 E illustrate is the process section of the formation groove isolation construction of one embodiment of the invention.
Fig. 3 illustrate is the flow chart of the high-density plasma trench embankment method of the minimizing gas-phase nucleation defective of second embodiment of the invention.
Fig. 4 illustrate is the flow chart of the high-density plasma trench embankment method of the minimizing gas-phase nucleation defective of third embodiment of the invention.
Fig. 5 illustrate is the graph of a relation according to process time and high-frequency radio frequency reflection power.
Fig. 6 illustrate is the graph of a relation according to process time and chamber pressure.
[main element symbol description]
200: substrate
202: groove
204: pad oxide
206: mask layer
208: dielectric material
210: opening
212: overhang
D1: first deposition step
D2: second deposition step
E: etching step
T1: first switch step
T2: second switch step
S100, S102, S104, S106, S108, S300, S302, S304, S306, S308, S400, S402, S404, S406, S408, S410: step
Embodiment
First embodiment
Fig. 1 illustrate is the flow chart of the high-density plasma trench embankment method of the minimizing gas-phase nucleation defective of first embodiment of the invention.Fig. 2 A-Fig. 2 E illustrate is the process section of the formation groove isolation construction of one embodiment of the invention.In the following embodiments, be that example explains to form groove isolation construction.Certainly, the high-density plasma trench embankment method of minimizing gas-phase nucleation defective of the present invention can also be applied to form between the pattern of conductive layer such as grid layer (Gate electrode layer) or metal level (metal layer) technology of interlayer dielectric layer.
Please at first carry out step S100 simultaneously with reference to Fig. 1 and Fig. 2 A, provide substrate 200 in reative cell, have groove 202 in this substrate 200.The material of substrate 200 for example is a silicon base.The formation method of groove 202 such as following.At first, in substrate 200, form comprehensive pad oxide 204 and mask layer 206 in regular turn.The material of pad oxide 204 for example is a silica, and its formation method is for example carried out thermal oxidation technology and formed.The material of mask layer 206 for example is a silicon nitride layer.The formation method of mask layer 206 is for example carried out chemical vapor deposition method and is formed.
Then, patterned mask layer 206 and pad oxide 204 are to expose substrate 200 surfaces that preboarding becomes groove 202 places.Then, be etching mask with the mask layer 206 and the pad oxide 204 of patterning, etching substrate 200 is to form groove 202.Reative cell for example is the reative cell of high-density plasma etching machine.
Please carry out step S102 simultaneously with reference to Fig. 1 and Fig. 2 B, carry out first deposition step, in groove 202, partly insert dielectric material 208.The formation method of dielectric material 208 for example is to carry out high density plasma CVD technology, normal pressure (AP) or subatmospheric (SA) chemical vapor deposition method.If dielectric material 208 is a silica, then in first deposition step, employed reacting gas comprises for example oxygen (O of carrier gas, oxygen-containing gas
2), ozone (O
3), nitric oxide (NO), nitrous oxide (N
2O) and composition thereof, silicon-containing gas and hydrogen-containing gas for example are hydrogen (H
2) or its isotope (deuterium, tritium), ammonia (NH
3).Carrier gas comprises inert gas, for example is argon gas (Ar), helium (He), neon (Ne), krypton gas (Kr), xenon (Xe), nitrogen (N
2) and composition thereof.Silicon-containing gas comprises silane gas (in the present invention, silane gas is the general designation of silane compound and derivative thereof), for example is monosilane (SiH
4), disilane (Si
2H
6), trisilalkane (Si
3H
8), tetrasilane (tetrailane, Si
4H
10), tetraethoxysilane (tetraethylorthosilicate, TEOS), tetramethyl cyclotetrasiloxane oxosilane (tetramethyl-cyclotetrasiloxane, TMCTS), prestox ring four oxosilane (octamethyl-cyclotetrasiloxane, OMCTS), methyl silicane (methyl-silane), dimethyl silane (dimethyl-silane), trimethyl silyl (trimethylsilane), tetramethyl monosilane (tetramethylsilane), tetramethyl disiloxane (tetramethyl-disiloxane, TMDSO), tetramethyl diethoxy disiloxane (tetramethyl-diethoxyl-disiloxane, TMDDSO), dimethyldiethoxysilane (dimethyl-dimethoxyl-silane, DMDMS) and composition thereof.
Except above-mentioned gas, the dielectric material 208 according to depositing can also contain other impurity gass in the reacting gas.For instance, if dielectric material 208 be phosphorosilicate glass (phosphosilicateGlass, PSG) or boron-phosphorosilicate glass (Borophosphosilicate Glass in the time of BPSG), then more contains hydrogen phosphide (PH in the reacting gas
3) and/or diboron hexahydride (B
2H
6) or triethoxy-boron (triethylborate, TEB) and/or triethyl phosphate (triethylphosphate, TEPO).If when dielectric material 208 is nitrogenous silica, then more contain nitrogen (N in the reacting gas
2), ammonia (NH
3), nitric oxide (NO), nitrous oxide (N
2O) and composition thereof.
And shown in Fig. 2 B, dielectric material 208 is not filled in groove 202, and is formed with opening 210, and is formed with at the drift angle place of mask layer 206 and overhangs 212.Overhang and 212 can make dielectric material 208 be difficult to insert in the groove 202.
Please carry out step S104 simultaneously with reference to Fig. 1 and Fig. 2 C, carry out etching step, partly remove the dielectric material 208 in the groove 202, overhang 212, and make the width of opening 210 become big to remove.Comprise fluorochemical and hydrogen-containing gas at the employed reacting gas of etching step.Fluorochemical for example is nitrogen fluoride, perfluoroalkane compound, sulfur fluoride.
Please carry out step S106 simultaneously with reference to Fig. 1 and Fig. 2 D, carry out second deposition step, in groove 202, partly insert dielectric material 208.Employed reacting gas comprises carrier gas, oxygen-containing gas, silicon-containing gas and hydrogen-containing gas in second deposition step, and, be written into silicon-containing gas and hydrogen-containing gas again to reative cell being written into carrier gas and oxygen-containing gas to reative cell and open radio-frequency power supply after a period of time.This second deposition step is to be connected in after the above-mentioned etching step.When switching to second deposition step from etching step, if be written into reacting gas (carrier gas, oxygen-containing gas, silicon-containing gas and hydrogen-containing gas) in the reative cell simultaneously, because the plasma of reative cell inside is in an unsure state, make RF-reflective specific power (RF reflectance power) improve, cause the nuclear reaction that is dissociated into of silicon-containing gas not exclusively and easily to form silicon-containing gas group (cluster).And, hydrogen-containing gas and oxygen-containing gas water generation reaction gas, silicon-containing gas group (cluster) and the reaction of the aqueous vapor that generated, and cause the gas-phase nucleation defective to form and attached in the substrate.In the present embodiment, when switching to second deposition step from etching step, prior to being written into carrier gas, oxygen-containing gas a period of time in the reative cell, to get rid of the left residual gas (being equivalent to cleaning) of etching step, and after opening radio-frequency power supply and making plasma in the reative cell reach stable state, import silicon-containing gas and hydrogen-containing gas again.Make deposition reaction under stable status, to carry out, and can reduce the gas-phase nucleation defective.
In second deposition step, the formation method of dielectric material 208 for example is to carry out high density plasma CVD technology, normal pressure (AP) or subatmospheric (SA) chemical vapor deposition method.If dielectric material 208 is a silica, then in second deposition step, employed reacting gas comprises carrier gas, oxygen-containing gas, for example oxygen (O
2), ozone (O
3), nitric oxide (NO), nitrous oxide (N
2O) and composition thereof, silicon-containing gas and hydrogen-containing gas for example are hydrogen (H
2) or its isotope (deuterium, tritium), ammonia (NH
3).Carrier gas comprises inert gas, for example is argon gas (Ar), helium (He), neon (Ne), krypton gas (Kr), xenon (Xe), nitrogen (N2) and composition thereof.Silicon-containing gas comprises silane gas, for example be monosilane, disilane, trisilalkane, tetrasilane, tetraethoxysilane, tetramethyl cyclotetrasiloxane oxosilane, prestox ring four oxosilanes, methyl silicane, dimethyl silane, trimethyl silyl, tetramethyl monosilane, tetramethyl disiloxane, tetramethyl diethoxy disiloxane, dimethyldiethoxysilane and composition thereof.
Except above-mentioned gas, the dielectric material 208 according to depositing can also contain other impurity gass in the reacting gas.For instance, if dielectric material 208 when being phosphorosilicate glass or boron-phosphorosilicate glass, then contain in the reacting gas hydrogen phosphide and/or diboron hexahydride or triethoxy-boron (triethylborate, TEB) and/or triethyl phosphate (triethylphosphate, TEPO).If when dielectric material 208 is nitrogenous silica, then contain nitrogen, ammonia, nitric oxide, nitrous oxide and composition thereof in the reacting gas.
Please carry out step 108 simultaneously with reference to Fig. 1 and Fig. 2 E, repeating step S104 and step S106 fill up groove 202 up to dielectric material 208.In this step, repeat etching step and deposition step, fill up groove up to dielectric material.Same, when etching step switches to deposition step,, open radio-frequency power supply and make the plasma in the reative cell reach stable state prior to being written into carrier gas, oxygen-containing gas in the reative cell after a period of time, import silicon-containing gas and hydrogen-containing gas again.Make deposition reaction under stable status, to carry out, and can reduce the gas-phase nucleation defective.
It should be noted that first deposition step and the employed reacting gas of second deposition step, can be identical, also can be different.The employed reacting gas of first deposition step for example, carrier gas can be helium or nitrogen, and silicon-containing gas can be a tetraethoxysilane, and oxygen-containing gas can be oxygen or ozone.The employed reacting gas of second deposition step, carrier gas can be helium or nitrogen, and silicon-containing gas can be a silane, and oxygen-containing gas can be an oxygen, and hydrogen-containing gas can be hydrogen or its isotope (deuterium, tritium).
Certainly, in second deposition step, also can be written into carrier gas and oxygen-containing gas earlier to reative cell and open radio-frequency power supply after a period of time, be written into silicon-containing gas earlier, and then be written into hydrogen-containing gas to reative cell.And, be written into silicon-containing gas to reative cell after, to being written into the time interval of hydrogen-containing gas before to the reative cell, be preferably 1 second～4 seconds for more than or equal to 1 second.In addition, in second deposition step, also can be written into hydrogen-containing gas to reative cell in the cumulative mode of flow, so benefit is, guarantee silicon-containing gas before beginning is dissociated fully, the reaction of hydrogen-containing gas and oxygen-containing gas can not take place and generate aqueous vapor and produce a large amount of gas-phase nucleation defectives.In first embodiment, radio-frequency power supply for example is the high-frequency radio frequency power supply.And, in whole technology, can also open the low frequency radio frequency power supply constantly.
In the first embodiment of the present invention, because when etching step switches to deposition step, prior to being written into carrier gas, oxygen-containing gas in the reative cell after a period of time, open radio-frequency power supply and make the plasma in the reative cell reach stable state, import silicon-containing gas and hydrogen-containing gas again.Therefore deposition reaction can be carried out under the state of plasma stability, and can reduce the gas-phase nucleation defective.And, because etching step and deposition step for example are that coordination carries out in same reaction board.Therefore, can simplify technology effectively and shorten the process time.
And, in the first embodiment of the present invention, also can adopt and be written into carrier gas and oxygen-containing gas earlier, be written into silicon-containing gas then, the order that is written into hydrogen-containing gas is afterwards again carried out second deposition step, equally also can reach the effect that reduces the gas-phase nucleation defective.
Second embodiment
Fig. 3 illustrate is the flow chart of the high-density plasma trench embankment method of the minimizing gas-phase nucleation defective of second embodiment of the invention.In following explanation, only the difference at the present embodiment and first embodiment elaborates.
Please refer to Fig. 3, at first carry out step S300, provide substrate in reative cell.Has groove in this substrate.
Then, carry out step S302, carry out first deposition step, in groove, partly insert dielectric material.The formation method of dielectric material for example is to carry out high density plasma CVD technology.In first deposition step, employed reacting gas comprises carrier gas, oxygen-containing gas, silicon-containing gas and hydrogen-containing gas.The employed carrier gas of this first deposition step, oxygen-containing gas, silicon-containing gas are identical with first embodiment with hydrogen-containing gas.
Then, carry out step S304, carry out etching step, partly remove the dielectric material in the groove.Comprise fluorochemical and hydrogen-containing gas at the employed reacting gas of this etching step.Fluorochemical that present embodiment uses is identical with first embodiment with hydrogen-containing gas.
Then, carry out step S306, carry out second deposition step, in groove, partly insert dielectric material.Employed reacting gas comprises carrier gas, oxygen-containing gas, silicon-containing gas and hydrogen-containing gas in second deposition step, and, be written into hydrogen-containing gas again to reative cell being written into carrier gas, oxygen-containing gas, silicon-containing gas to reative cell and open radio-frequency power supply after after a while.Be written into silicon-containing gas to reative cell after, to being written into the time interval of hydrogen-containing gas before to the reative cell, be preferably 1 second～4 seconds for example more than or equal to 1 second.In the present embodiment, when switching to second deposition step from etching step, prior to being written into carrier gas, oxygen-containing gas and silicon-containing gas in the reative cell and opening radio-frequency power supply through after a while, make plasma in the reative cell reach stable state after, import hydrogen-containing gas again.Because silicon-containing gas dissociated fully in reative cell in advance, so deposition reaction can carry out under the state of plasma stability, and can reduce the gas-phase nucleation defective.The employed carrier gas of this second deposition step, oxygen-containing gas, silicon-containing gas are identical with first embodiment with hydrogen-containing gas.
Afterwards, carry out step S308, repeating step S304 and step S306 fill up groove up to dielectric material.In this step, repeat etching step and deposition step, fill up groove up to dielectric material.Same, when etching step switches to deposition step, prior to being written into carrier gas, oxygen-containing gas and silicon-containing gas in the reative cell and opening radio-frequency power supply through after a while, make plasma in the reative cell reach stable state after, import hydrogen-containing gas again.Make deposition reaction under stable status, to carry out, and can reduce the gas-phase nucleation defective.In the present embodiment, first deposition step and the employed reacting gas of second deposition step, can be identical, also can be different, first embodiment for example.In a second embodiment, radio-frequency power supply for example is the high-frequency radio frequency power supply.And, in whole technology, can also open the low frequency radio frequency power supply constantly.
In the second embodiment of the present invention, because when etching step switches to deposition step, prior to being written into carrier gas, oxygen-containing gas and silicon-containing gas in the reative cell and opening radio-frequency power supply through after a while, make plasma in the reative cell reach stable state after, import hydrogen-containing gas again.Because silicon-containing gas dissociated fully in reative cell in advance, so deposition reaction can carry out under stable status, and can reduce the gas-phase nucleation defective.And, because etching step and deposition step for example are that coordination carries out in same reaction board.Therefore, can simplify technology effectively and shorten the process time.
The 3rd embodiment
Fig. 4 illustrate is the flow chart of the high-density plasma trench embankment method of the minimizing gas-phase nucleation defective of third embodiment of the invention.In following explanation, only the difference at present embodiment and first embodiment and second embodiment elaborates.
Please refer to Fig. 4, at first carry out step S400, provide substrate in reative cell.Has groove in this substrate.
Then, carry out step S402, carry out first deposition step, in groove, partly insert dielectric material.The formation method of dielectric material for example is to carry out high density plasma CVD technology.In first deposition step, employed reacting gas comprises carrier gas, oxygen-containing gas, silicon-containing gas and hydrogen-containing gas.The employed carrier gas of this first deposition step, oxygen-containing gas, silicon-containing gas, hydrogen-containing gas are identical with first embodiment.
Then, carry out step S404, carry out etching step, partly remove the dielectric material in the groove.Comprise fluorochemical and hydrogen-containing gas at the employed reacting gas of this etching step.Fluorochemical that present embodiment uses is identical with first embodiment with hydrogen-containing gas.
Then, carry out step S406, carry out second deposition step, in groove, partly insert dielectric material.Employed reacting gas comprises carrier gas, oxygen-containing gas and silicon-containing gas in second deposition step.The employed carrier gas of this second deposition step, oxygen-containing gas are identical with first embodiment with silicon-containing gas.Owing to when etching step switches to second deposition step, be not written into hydrogen-containing gas in reative cell, so reacting gas can not produce violent reaction, and only can form the very thin dielectric material of one deck at substrate surface.And, in reative cell, be not written into hydrogen-containing gas, can in reative cell, not generate aqueous vapor yet.In addition, the cognition of the plasma in the reative cell reaches stable state.
Then, carry out step S408, the 3rd deposition step is carried out in substrate, in groove, partly insert dielectric material.Employed reacting gas comprises carrier gas, oxygen-containing gas, silicon-containing gas and hydrogen-containing gas in the 3rd deposition step.Owing to made the plasma in the reative cell reach stable state at second deposition step, therefore after being directly switch into the 3rd deposition step from second deposition step, the 3rd deposition step can carry out under the state of plasma stability, and can reduce the gas-phase nucleation defective.The employed carrier gas of this 3rd deposition step, oxygen-containing gas, silicon-containing gas are identical with first embodiment with hydrogen-containing gas.
Afterwards, carry out step S410, repeating step S404 fills up groove up to dielectric material to step S408.In this step S410, repeat the etching step and second deposition step and the 3rd deposition step, fill up groove up to dielectric material.
In the third embodiment of the present invention, owing between etching step and the 3rd deposition step, be provided with second deposition step.Utilize second deposition step to make the plasma in the reative cell reach stable state.Therefore, be directly switch into the 3rd deposition step from second deposition step after, the 3rd deposition step can carry out under stable status, and can reduce the gas-phase nucleation defective.
It should be noted that first deposition step, etching step, second deposition step and the 3rd deposition step, for example is that coordination carries out in same reaction board.Therefore, can simplify technology effectively and shorten the process time.
In addition, first deposition step of above-mentioned first embodiment to the, three embodiment also can adopt the identical mode of second deposition step with first embodiment, second embodiment.That is, in first deposition step,, open radio-frequency power supply and make the plasma in the reative cell reach stable state prior to being written into carrier gas, oxygen-containing gas in the reative cell after a period of time, be written into silicon-containing gas and hydrogen-containing gas again.Perhaps, in prior to reative cell, be written into carrier gas, oxygen-containing gas and silicon-containing gas and open radio-frequency power supply through after a while, make plasma in the reative cell reach stable state after, import hydrogen-containing gas again.
Followingly (be written into carrier gas, oxygen-containing gas and silicon-containing gas earlier through after a while, be written into hydrogen-containing gas again according to experimental example.) prove that with known example (technology is written into all reacting gass at the very start simultaneously) the present invention can reduce the generation of gas-phase nucleation defective really.
Fig. 5 illustrate is the graph of a relation according to process time and high-frequency radio frequency reflection power.Fig. 6 illustrate is the graph of a relation according to process time and chamber pressure.Process time is divided into five intervals in Fig. 5 and Fig. 6, that is the first deposition step D1, the first switch step T1, etching step E, five intervals such as the second switch step T2, the second deposition step D2.In Fig. 5 and Fig. 6, solid line is represented experimental example of the present invention, and dotted line is represented known example.And every optimizing technology parameters as shown in Table 1.
Table one
| Technological parameter | The first deposition step D1 | Etching step E | The second deposition step D2 |
| SiH 4Flow velocity (sccm) | 80 | 0 | 80 |
| O 2Flow velocity (sccm) | 144 | 0 | 144 |
| He flow velocity (sccm) | 300 | 200 | 300 |
| H 2Flow velocity (sccm) | 400 | 500 | 400 |
| NF 3Flow velocity (sccm) | 0 | 200 | 0 |
| Low frequency power (W) | 5000 | 2200 | 5000 |
| High frequency power (W) | 3600 | 1500 | 3600 |
| Operation pressure (mTorr) | 5.5 | 7 | 5.5 |
| Technological temperature (℃) | 534 | 400 | 534 |
As Fig. 5 and shown in Figure 6, known example (shown in dotted line) is in the first switch step T1 and the second switch step T2, and the high-frequency radio frequency reflection power can improve.Especially the high-frequency radio frequency reflection power of the second switch step T2 between the etching step E and the second deposition step D2 is high especially.This is because the plasma of reative cell inside is in an unsure state, and makes the RF-reflective specific power improve, and causes the nuclear reaction that is dissociated into of silicon-containing gas not exclusively and easily to form silicon-containing gas group (cluster).And, hydrogen-containing gas and oxygen-containing gas water generation reaction.So, silicon-containing gas group (cluster) and water reaction, and cause the gas-phase nucleation defective to form.
And that the high-frequency radio frequency reflection power of the second switch step T2 of experimental example (shown in solid line) between the etching step E and the second deposition step D2 that adopts the high-density plasma trench embankment method of minimizing gas-phase nucleation defective of the present invention significantly reduces is a lot, and can reduce the gas-phase nucleation defective.
In sum, the high-density plasma trench embankment method of minimizing gas-phase nucleation defective of the present invention, because when etching step switches to deposition step, make plasma in the reative cell reach stable state after, importing hydrogen-containing gas (or silicon-containing gas and hydrogen-containing gas).Therefore deposition reaction can be carried out under the state of plasma stability, and can reduce the gas-phase nucleation defective.And, because etching step and deposition step are that coordination carries out in same reaction board.Therefore, can simplify technology effectively and shorten the process time.
Claims (28)
1. high-density plasma trench embankment method that reduces the gas-phase nucleation defective comprises:
(a) provide substrate in reative cell, have groove in this substrate;
(b) carry out first deposition step, in this groove, partly insert dielectric material;
(c) carry out etching step, partly remove this dielectric material in this groove; And
(d) carry out second deposition step, in this groove, partly insert this dielectric material, wherein employed reacting gas comprises carrier gas, oxygen-containing gas, silicon-containing gas and hydrogen-containing gas in this second deposition step, and, be written into this silicon-containing gas and this hydrogen-containing gas again to this reative cell being written into this carrier gas and this oxygen-containing gas to this reative cell and open radio-frequency power supply after a period of time.
2. the high-density plasma trench embankment method of minimizing gas-phase nucleation defective as claimed in claim 1 comprises that also repeating step (c) and step (d) fill up this groove up to this dielectric material.
3. the high-density plasma trench embankment method of minimizing gas-phase nucleation defective as claimed in claim 1, wherein comprise this carrier gas, this oxygen-containing gas, this silicon-containing gas and this hydrogen-containing gas at the employed reacting gas of this first deposition step, and, be written into this silicon-containing gas and this hydrogen-containing gas again to this reative cell being written into this carrier gas and this oxygen-containing gas to this reative cell and open radio-frequency power supply after a period of time.
4. the high-density plasma trench embankment method of minimizing gas-phase nucleation defective as claimed in claim 1, wherein this carrier gas comprises inert gas.
5. the high-density plasma trench embankment method of minimizing gas-phase nucleation defective as claimed in claim 1, wherein in this second deposition step, also be included in and be written into this carrier gas and this oxygen-containing gas to this reative cell and open radio-frequency power supply after a period of time, be written into this silicon-containing gas earlier, and then be written into this hydrogen-containing gas to this reative cell.
6. the high-density plasma trench embankment method of minimizing gas-phase nucleation defective as claimed in claim 5, wherein in this second deposition step, be written into this silicon-containing gas to this reative cell after, to being written into the time interval of this hydrogen-containing gas before to this reative cell for more than or equal to 1 second.
7. the high-density plasma trench embankment method of minimizing gas-phase nucleation defective as claimed in claim 5, wherein in this second deposition step, be written into this silicon-containing gas to this reative cell after, be 1 second～4 seconds to being written into the time interval of this hydrogen-containing gas before to this reative cell.
8. the high-density plasma trench embankment method of minimizing gas-phase nucleation defective as claimed in claim 5 wherein in this second deposition step, is written into this hydrogen-containing gas to this reative cell in the cumulative mode of flow.
9. the high-density plasma trench embankment method of minimizing gas-phase nucleation defective as claimed in claim 1, wherein this silicon-containing gas comprises silane gas.
10. the high-density plasma trench embankment method of minimizing gas-phase nucleation defective as claimed in claim 1 wherein comprises fluorochemical and this hydrogen-containing gas at the employed reacting gas of this etching step.
11. the high-density plasma trench embankment method of minimizing gas-phase nucleation defective as claimed in claim 10, wherein this fluorochemical comprises one of nitrogen fluoride, perfluoroalkane compound, sulfur fluoride.
12. a high-density plasma trench embankment method that reduces the gas-phase nucleation defective comprises:
(a) provide substrate, have groove in this substrate;
(b) carry out first deposition step, in this groove, partly insert dielectric material;
(c) carry out etching step, partly remove this dielectric material in this groove; And
(d) carry out second deposition step, in this groove, partly insert this dielectric material, wherein employed reacting gas comprises carrier gas, oxygen-containing gas, silicon-containing gas and hydrogen-containing gas in this second deposition step, and, be written into this hydrogen-containing gas again to this reative cell being written into this carrier gas, this oxygen-containing gas, this silicon-containing gas to this reative cell and open radio-frequency power supply after after a while.
13. the high-density plasma trench embankment method of minimizing gas-phase nucleation defective as claimed in claim 12 comprises that also repeating step (c) and step (d) fill up this groove up to this dielectric material.
14. the high-density plasma trench embankment method of minimizing gas-phase nucleation defective as claimed in claim 12, wherein comprise this carrier gas, this oxygen-containing gas, this silicon-containing gas and this hydrogen-containing gas at the employed reacting gas of this first deposition step, and, be written into this hydrogen-containing gas again to this reative cell being written into this carrier gas, this oxygen-containing gas, this silicon-containing gas to this reative cell and open radio-frequency power supply after after a while.
15. the high-density plasma trench embankment method of minimizing gas-phase nucleation defective as claimed in claim 12, wherein this carrier gas comprises inert gas.
16. the high-density plasma trench embankment method of minimizing gas-phase nucleation defective as claimed in claim 12, wherein this silicon-containing gas comprises silane gas.
17. the high-density plasma trench embankment method of minimizing gas-phase nucleation defective as claimed in claim 12 wherein comprises fluorochemical and this hydrogen-containing gas at the employed reacting gas of this etching step.
18. the high-density plasma trench embankment method of minimizing gas-phase nucleation defective as claimed in claim 17, wherein this fluorochemical comprises one of nitrogen fluoride, perfluoroalkane compound, sulfur fluoride.
19. the high-density plasma trench embankment method of minimizing gas-phase nucleation defective as claimed in claim 12, wherein in this second deposition step, be written into this silicon-containing gas to this reative cell after, to being written into the time interval of this hydrogen-containing gas before to this reative cell for more than or equal to 1 second.
20. the high-density plasma trench embankment method of minimizing gas-phase nucleation defective as claimed in claim 12, wherein in this second deposition step, be written into this silicon-containing gas to this reative cell after, be 1 second～4 seconds to being written into the time interval of this hydrogen-containing gas before to this reative cell.
21. the high-density plasma trench embankment method of minimizing gas-phase nucleation defective as claimed in claim 12 wherein in this second deposition step, is written into this hydrogen-containing gas to this reative cell in the cumulative mode of flow.
22. a high-density plasma trench embankment method that reduces the gas-phase nucleation defective comprises:
(a) provide substrate, have groove in this substrate;
(b) carry out first deposition step, in this groove, partly insert dielectric material;
(c) carry out etching step, partly remove this dielectric material in this groove;
(d) carry out second deposition step, partly insert this dielectric material in this groove, wherein employed reacting gas comprises carrier gas, oxygen-containing gas and silicon-containing gas in this second deposition step; And
(e) carry out the 3rd deposition step, partly insert this dielectric material in this groove, wherein employed reacting gas comprises this carrier gas, this oxygen-containing gas, this silicon-containing gas and hydrogen-containing gas in the 3rd deposition step.
23. the high-density plasma trench embankment method of minimizing gas-phase nucleation defective as claimed in claim 22 comprises that also repeating step (c), step (d) and step (e) fill up this groove up to this dielectric material.
24. the high-density plasma trench embankment method of minimizing gas-phase nucleation defective as claimed in claim 22 wherein comprises this carrier gas, this oxygen-containing gas, this silicon-containing gas and this hydrogen-containing gas at the employed reacting gas of this first deposition step.
25. the high-density plasma trench embankment method of minimizing gas-phase nucleation defective as claimed in claim 22, wherein this carrier gas comprises inert gas.
26. the high-density plasma trench embankment method of minimizing gas-phase nucleation defective as claimed in claim 22, wherein this silicon-containing gas comprises silane gas.
27. the high-density plasma trench embankment method of minimizing gas-phase nucleation defective as claimed in claim 22 wherein comprises fluorochemical and this hydrogen-containing gas at the employed reacting gas of this etching step.
28. the high-density plasma trench embankment method of minimizing gas-phase nucleation defective as claimed in claim 27, wherein this fluorochemical comprises one of nitrogen fluoride, perfluoroalkane compound, sulfur fluoride.
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6802944B2 (en) * | 2002-10-23 | 2004-10-12 | Applied Materials, Inc. | High density plasma CVD process for gapfill into high aspect ratio features |
| US6846745B1 (en) * | 2001-08-03 | 2005-01-25 | Novellus Systems, Inc. | High-density plasma process for filling high aspect ratio structures |
| US7078312B1 (en) * | 2003-09-02 | 2006-07-18 | Novellus Systems, Inc. | Method for controlling etch process repeatability |
| CN1913122A (en) * | 2005-08-12 | 2007-02-14 | 东部电子株式会社 | Method for forming void-free trench isolation layer |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6846745B1 (en) * | 2001-08-03 | 2005-01-25 | Novellus Systems, Inc. | High-density plasma process for filling high aspect ratio structures |
| US6802944B2 (en) * | 2002-10-23 | 2004-10-12 | Applied Materials, Inc. | High density plasma CVD process for gapfill into high aspect ratio features |
| US7078312B1 (en) * | 2003-09-02 | 2006-07-18 | Novellus Systems, Inc. | Method for controlling etch process repeatability |
| CN1913122A (en) * | 2005-08-12 | 2007-02-14 | 东部电子株式会社 | Method for forming void-free trench isolation layer |
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