CN101361413A - 电子部件安装粘合剂及电子部件安装结构 - Google Patents

电子部件安装粘合剂及电子部件安装结构 Download PDF

Info

Publication number
CN101361413A
CN101361413A CNA2007800016737A CN200780001673A CN101361413A CN 101361413 A CN101361413 A CN 101361413A CN A2007800016737 A CNA2007800016737 A CN A2007800016737A CN 200780001673 A CN200780001673 A CN 200780001673A CN 101361413 A CN101361413 A CN 101361413A
Authority
CN
China
Prior art keywords
adhesive
thermosetting resin
electronic unit
cured material
metallic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CNA2007800016737A
Other languages
English (en)
Other versions
CN101361413B (zh
Inventor
境忠彦
永福秀喜
本村耕治
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Publication of CN101361413A publication Critical patent/CN101361413A/zh
Application granted granted Critical
Publication of CN101361413B publication Critical patent/CN101361413B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J201/00—Adhesives based on unspecified macromolecular compounds
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
    • H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
    • H05K3/321—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by conductive adhesives
    • H05K3/323—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by conductive adhesives by applying an anisotropic conductive adhesive layer over an array of pads
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J11/00—Features of adhesives not provided for in group C09J9/00, e.g. additives
    • C09J11/02—Non-macromolecular additives
    • C09J11/04—Non-macromolecular additives inorganic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
    • H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/0556—Disposition
    • H01L2224/05568—Disposition the whole external layer protruding from the surface
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/05573—Single external layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161—Disposition
    • H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161—Disposition
    • H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/16227—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation the bump connector connecting to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/291—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29101—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of less than 400°C
    • H01L2224/29109—Indium [In] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/291—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29101—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of less than 400°C
    • H01L2224/29111—Tin [Sn] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/2919—Material with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298—Fillers
    • H01L2224/29299—Base material
    • H01L2224/293—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73201—Location after the connecting process on the same surface
    • H01L2224/73203—Bump and layer connectors
    • H01L2224/73204—Bump and layer connectors the bump connector being embedded into the layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/8319—Arrangement of the layer connectors prior to mounting
    • H01L2224/83192—Arrangement of the layer connectors prior to mounting wherein the layer connectors are disposed only on another item or body to be connected to the semiconductor or solid-state body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/832—Applying energy for connecting
    • H01L2224/83201—Compression bonding
    • H01L2224/83203—Thermocompression bonding, e.g. diffusion bonding, pressure joining, thermocompression welding or solid-state welding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/838—Bonding techniques
    • H01L2224/8385—Bonding techniques using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester
    • H01L2224/83851—Bonding techniques using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester being an anisotropic conductive adhesive
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01005—Boron [B]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01006—Carbon [C]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01029—Copper [Cu]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/0103—Zinc [Zn]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01033—Arsenic [As]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01047—Silver [Ag]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01049—Indium [In]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/0105—Tin [Sn]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01051—Antimony [Sb]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01082—Lead [Pb]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
    • H01L2924/0132—Binary Alloys
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
    • H01L2924/0133—Ternary Alloys
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
    • H01L2924/0134—Quaternary Alloys
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
    • H01L2924/014—Solder alloys
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/06—Polymers
    • H01L2924/0665—Epoxy resin
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/06—Polymers
    • H01L2924/078—Adhesive characteristics other than chemical
    • H01L2924/0781—Adhesive characteristics other than chemical being an ohmic electrical conductor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/1901—Structure
    • H01L2924/1904—Component type
    • H01L2924/19041—Component type being a capacitor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/1901—Structure
    • H01L2924/1904—Component type
    • H01L2924/19043—Component type being a resistor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/35—Mechanical effects
    • H01L2924/351—Thermal stress
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
    • H05K2203/04—Soldering or other types of metallurgic bonding
    • H05K2203/0425—Solder powder or solder coated metal powder
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/36—Assembling printed circuits with other printed circuits
    • H05K3/361—Assembling flexible printed circuits with other printed circuits
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/28—Web or sheet containing structurally defined element or component and having an adhesive outermost layer
    • Y10T428/2852—Adhesive compositions
    • Y10T428/2857—Adhesive compositions including metal or compound thereof or natural rubber
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/28—Web or sheet containing structurally defined element or component and having an adhesive outermost layer
    • Y10T428/2852—Adhesive compositions
    • Y10T428/287—Adhesive compositions including epoxy group or epoxy polymer
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/31504—Composite [nonstructural laminate]
    • Y10T428/31678—Of metal

Abstract

本发明的目的是提供一种电子部件安装粘合剂，该电子部件安装粘合剂可以防止在将电子部件相互结合得到的电子部件安装结构中发生裂纹和剥离，以及使用该电子部件安装粘合剂结合电子部件而得到的电子部件安装结构。在电子部件安装结构中，第一电路板和第二电路板通过电子部件安装粘合剂来结合。这里，电子部件安装粘合剂是通过将金属粒子分散于热固性树脂内来得到，该金属粒子熔点Mp低于该热固性树脂的固化材料的玻璃转变温度Tg。

Description

电子部件安装粘合剂及电子部件安装结构
技术领域
本发明涉及用于结合电子部件的电子部件安装粘合剂以及使用该电子部件安装粘合剂结合电子部件而得到的电子部件安装结构。
背景技术
诸如半导体芯片或者电路板的电子部件与另一电子部件结合的电子部件安装结构中，存在这样的电子部件安装结构，其中电极通过焊料相互电连接和机械连接，且同时，两个电子部件通过在该两个电子部件之间的空间内热固化的热固性树脂的固化材料而牢固地连接。在这种电子部件安装结构中，即使当由热循环测试产生大的温度变化时，热固性树脂的整个固化材料可以接受由于两个电子部件的线性膨胀系数差异而产生的热应力；相应地，可以避免热应力集中在电极的结合面上。这种情况下，热固性树脂作为电子部件安装粘合剂，结合这两个电子部件。当两个电子部件的电极相互连接或者在电极相互连接之后，该热固性树脂供给到这两个电子部件之间并热固化。
[专利文献1]JP-A No.2006-169395
[专利文献2]JP-A No.2004-323777
发明内容
现在，为有机材料的热固性树脂的固化材料通常具有物理性能显著变化的玻璃转变温度。如果温度上升超过该玻璃转变温度，线性膨胀系数迅速增大时，纵向弹性模量(杨氏模量)迅速减小。也就是说，在被加热超过其玻璃转变温度时，热固性树脂的固化材料软化且趋于热膨胀。然而，线性膨胀系数迅速增大(热膨胀)的温度和纵向弹性模量迅速减小(软化)的温度不一定一致。对于前一温度低于后一温度的情形，当在电子部件安装结构的热循环测试中，热固性树脂的固化材料被加热超过其玻璃转变温度时，该固化材料开始迅速热膨胀处于坚硬状态；相应地，在固化材料和电子部件的结合面上，大的热应力在某些情形下在结合面上产生裂纹和剥离。
关于这一点，本发明的目的是提供一种电子部件安装粘合剂，该电子部件安装粘合剂可以防止在将电子部件相互结合得到的电子部件安装结构中发生裂纹和剥离，以及使用该电子部件安装粘合剂结合电子部件而得到的电子部件安装结构。
根据本发明的电子部件安装粘合剂可以通过将金属粒子分散于热固性树脂内来得到，该金属粒子熔点低于该热固性树脂的固化材料的玻璃转变温度。
本发明的电子部件安装粘合剂优选地包括体积比的20％以下的该金属粒子。
本发明的电子部件安装粘合剂优选地包括由包含Sn以及选自Pb、Ag、Zn、Bi、In、Sb和Cu的至少一种金属的合金制成。
本发明的电子部件安装粘合剂优选地包括分散于热固性树脂内的无机填充剂。
本发明的电子部件安装粘合剂优选地包括粒径为30μm以下的金属粒子。
本发明的电子部件安装粘合剂优选地包括熔点比该热固性树脂的固化材料的玻璃转变温度低10℃以上的金属粒子。
本发明的电子部件安装结构包括：具有电极的第一电子部件；具有电极的第二电子部件，该第二电子部件的电极电连接到该第一电子部件的电极；以及粘合剂固化材料，该粘合剂固化材料通过固化主要由热固性树脂制成的电子部件安装粘合剂而得到，并且该粘合剂固化材料连接两个电子部件，其中该粘合剂固化材料中包含金属粒子，该金属粒子的熔点低于该热固性树脂的固化材料的玻璃转变温度。
本发明的电子部件安装结构优选地包括熔点比该热固性树脂的固化材料的玻璃转变温度低10℃以上的金属粒子。
对于本发明的电子部件安装粘合剂的固化材料(粘合剂固化材料)被加热的情形，当粘合剂固化材料的温度接近热固性树脂单体的固化材料(树脂固化材料)的玻璃转变温度时，粘合剂固化材料的线性膨胀系数迅速增大以使粘合剂固化材料大幅热膨胀。然而，由于在粘合剂固化材料的温度达到树脂固化材料的玻璃转变温度之前，包含在粘合剂固化材料内的金属粒子熔融，粘合剂固化材料的表观纵向弹性模量减小且粘合剂固化材料由此开始软化。也就是说，当粘合剂固化材料被加热超过树脂固化材料的玻璃转变温度时，粘合剂固化材料开始软化且随后大幅热膨胀。
相应地，电子部件通过使用本发明的电子部件安装粘合剂而相互结合。在本发明的电子部件安装粘合剂的固化材料夹置于电子部件之间的电子部件安装结构中，即使当施加有由于该热循环测试所致的大的温度变化，作用于粘合剂固化材料与电子部件的结合面上的热应力不会过大，且由此可以防止在结合面上发生裂纹和剥离。
附图说明
图1为本发明一个实施例中电子部件安装结构的剖面图。
图2A至2C为本发明一个实施例中电子部件安装结构的制作工艺图。
图3为示出本发明一个实施例中固化粘合剂的温度及其纵向弹性模量之间的关系的曲线图。
具体实施方式
下面参考附图描述本发明的实施例。图1为本发明一个实施例中电子部件安装结构的剖面图，图2A至2C为本发明一个实施例中电子部件安装结构的制作工艺图，图3为示出本发明一个实施例中粘合剂固化材料的温度及纵向弹性模量之间的关系的曲线图。
图1中，在电子部件安装结构1中，通过粘合剂固化材料20’，第一电路板11的电极12和第二电路板13的电极14电连接且两个电路板11和13结合，其中粘合剂固化材料20’是通过热固化主要成份为热固性树脂21的电子部件安装粘合剂(下文中简称为粘合剂)20而得到的。第一电路板11和第二电路板13分别为电子部件的示例。除了电路板之外，还可以使用半导体芯片、电阻器和电容器。
根据电子部件安装结构1的制作工艺，如图2A至2C所示，首先，第一电路板11保持在保持平台31的顶面上，使得第一电路板11的电极12可以朝上且粘合剂20通过配给器涂布在第一电路板11的表面上(图2A)。此时，第一电路板11的所有电极12覆盖有粘合剂20。
在粘合剂20涂布在第一电路板11的表面上之后，吸着有第二电路板13的热压结合头32置于第一电路板11上方。随后，在第一电路板11的电极12和第二电路板13的电极14对准之后，第二电路板13相对地更靠近第一电路板11，使得第二电路板13的电极14从上方接近第一电路板11的电极12(通过下降热压结合头32)，随后加热两个电路板11和13(图2B)。由此，两个电路板11和13之间的粘合剂20热固化为粘合剂固化材料20’，牢固地结合两个电路板11和13。此外，在该热压结合工艺中，夹置于第一电路板11的电极12和第二电路板13的电极14之间的粘合剂20(粘合剂固化材料20’)内的金属粒子22熔融，并在两个电极12和14之间膨胀以通过金属粒子22电连接两个电极12和14(图1所示部分放大图)。
经过预定时间之后，两个电路板11和13的加热停止，第二电路板13的吸着解除，且热压结合头32向上退回。由此，电子部件安装结构1的制作完成(图2C)。
如上所述，电子部件安装结构1的粘合剂固化材料20’是通过热固化金属粒子22分散于热固性树脂21内的粘合剂20而得到的部件，置于第一电路板11和第二电路板13之间以牢固地结合两个电路板11和13，并将所包含的金属粒子22布置在第一电路板11的电极12和第二电路板13的电极14之间以电连接两个电极12和14。也就是说，根据本实施例，粘合剂20(粘合剂固化材料20’)起着所谓各向异性导电材料的功能，以通过金属粒子22电连接上下对向的电极12和14并横向地即在相邻电极之间电绝缘。
为粘合剂20主要成份的热固性树脂21例如由环氧树脂或丙烯酸树脂制成。焊料粒子22的熔点Mp低于热固性树脂21的固化材料的玻璃转变温度Tg，且是由例如包含Sn以及选自Pb、Ag、Zn、Bi、In、Sb和Cu的至少一种金属的合金制成。具体而言，可以使用诸如SnZn、SnBi、SnBiAg、SnAgBiIn、SnAgCu、SnPb和SnIn的焊料作为金属粒子22。
图3为示出粘合剂固化材料20’的温度和纵向弹性模量(杨氏模量)之间的关系的曲线图，其中热固性树脂21为环氧树脂(混合有咪唑(imidazole)类型固化剂)且金属粒子22为具有30μm平均粒径的SnBi合金。这里，粘合剂20整体中金属粒子22的含量在三个水平改变：体积比的0％、体积比的10％和体积比的20％。在该示例中，热固性树脂21的固化材料的玻璃转变温度Tg约为165℃，SnBi合金的熔点Mp约为130℃。
从图3的曲线图发现，当本实施例的粘合剂固化材料20’被加热时，在粘合剂固化材料20’的温度到达热固性树脂21单体的固化材料(称为树脂固化材料)的玻璃转变温度Tg之前，粘合剂固化材料20’的表观纵向弹性模量迅速减小，也就是说，软化开始于比树脂固化材料的玻璃转变温度Tg低的温度。考虑这一点是因为，由于分散于热固性树脂21内的金属粒子22的熔点Mp低于树脂固化材料的玻璃转变温度Tg，在粘合剂固化材料20’的温度到达树脂固化材料的玻璃转变温度Tg之前，金属粒子22熔融。
另一方面，当粘合剂固化材料20’的温度接近树脂固化材料的玻璃转变温度Tg时，粘合剂固化材料20’的线性膨胀系数迅速增大且粘合剂固化材料20’由此大幅膨胀。也就是说，当粘合剂固化材料20’被加热超过树脂固化材料的玻璃转变温度Tg时，粘合剂固化材料20’开始软化，随后大幅热膨胀。
因此，本实施例中的粘合剂20是通过将熔点低于热固性树脂21的固化材料的玻璃转变温度Tg的金属粒子22分散于热固性树脂21内来形成，且本实施例中的电子部件安装结构1是通过使用粘合剂20结合第一电路板11和第二电路板13来形成。在粘合剂固化材料20’夹置于第一电路板11和第二电路板13之间的电子部件安装结构1中，即使当其暴露于由于该热循环测试所致的大的温度变化，与其中粘合剂固化材料迅速开始热膨胀处于坚硬状态的现有粘合剂固化材料不同，作用于粘合剂固化材料20’与两个电路板11和13之间的结合面S(图1的部分放大图)上的热应力不会过大；相应地，可以防止在结合面S内发生裂纹和剥离。热固性树脂21的固化材料的玻璃转变温度Tg在特定温度范围(宽度)上延伸；相应地，为了在金属粒子22的熔点和热固性树脂21的固化材料的玻璃转变温度之间形成特定程度的温度差(裕度)，金属粒子22的熔点优选地设置为比热固性树脂21的固化材料的玻璃转变温度低10℃以上。
这里，粘合剂20整体内的金属粒子22含量优选为体积比的20％以下。这是因为，从图3的曲线图显而易见，粘合剂20整体内的金属粒子22含量与粘合剂固化材料20’的纵向弹性模量相关联，当粘合剂固化材料20’被加热时，在体积比的20％以下，粘合剂固化材料20’的纵向弹性模量的下降速率随着金属粒子22含量增大而增大，且作用于结合面上的热应力因此可以大幅减轻。然而，当金属粒子22含量超过体积比的20％时，粘合剂20的粘度变得过大而难以用作粘合剂20，而且成本高。在超过树脂固化材料的玻璃转变温度Tg的温度，即使当金属粒子22含量为体积比的0％时，粘合剂固化材料20’的纵向弹性模量大幅减小。然而，由于在该区域线性膨胀系数迅速增大，为了使粘合剂固化材料20’的纵向弹性模量减小与线性膨胀系数增加的比率(粘合剂固化材料20’的软化比率)足够大，粘合剂20整体内的金属粒子22含量优选地为体积比的3％以上，也就是说在体积比的3％至20％的范围内。
再者，在本实施例的粘合剂20中，优选地将无机填充剂分散于热固性树脂21内。当无机填充剂分散于热固性树脂21内时，粘合剂固化材料20，的线性膨胀系数可以整体地减小，且作用于结合面S上的热应力由此可以进一步减轻。然而，当粘合剂20整体内的无机填充剂含量过大时，粘合剂20的粘度变得非常高而难以使用；相应地，无机填充剂含量优选地为重量比的50％以下。
再进一步，在本实施例的粘合剂20中，分散于热固性树脂21内的金属粒子22的粒径优选地为30μm以下。这是因为，对于粘合剂20(粘合剂固化材料20’)用作各向异性导电材料的情形，当电子部件安装结构1的相邻电极的间隔约为300μm时，认为相邻粒子彼此不短路的粒径上限为30μm。
为了减轻作用于电子部件安装结构1的结合面S上的热应力，可以考虑将诸如橡胶粒子的低弹性树脂或者具有塑性的树脂添加到热固性树脂21的方法。然而，橡胶粒子或树脂与为基底的热固性树脂21的兼容性不一定良好。当兼容性不良时，会导致诸如粘合力劣化的不便。在这一点，如本实施例所示，当分散于热固性树脂21内的金属粒子22是由Sn以及选自Pb、Ag、Zn、Bi、In、Sb和Cu的至少一种金属的合金制成时，无需在意兼容性。这意味着，热固性树脂21的选择宽度变大，且由此可以容易地选择与所需物理特性和性能相对应的热固性树脂21。再者，当金属粒子22由金属的合金制成时，粘合剂20(粘合剂固化材料20’)可用作各向异性导电材料，再者，取决于金属粒子22的金属组成的选择，可以有利地自由控制金属粒子22的熔点。
在上文中，描述了本发明的实施例。然而，本发明不限于该实施例。例如，在该实施例中，由于分散于热固性树脂21内的金属粒子22，电子部件安装结构1内的粘合剂固化材料20’电连接第一电路板11的电极12和第二电路板13的电极14以用作各向异性导电材料。然而，在本发明的电子部件安装结构中，电极被电连接的两个电子部件仅通过本发明的粘合剂来结合，也就是说，熔点低于热固性树脂的固化材料的玻璃转变温度的金属粒子分散于热固性树脂内的粘合剂。也就是说，粘合剂的固化材料不一定用作各向异性导电材料。
再者，在电子部件安装结构1中，第一电子部件的第一电路板11的电极12和第二电子部件的第二电路板13的电极14电连接，且通过热固化主要由热固性树脂21制成的粘合剂20而得到的粘合剂固化材料20’结合两个电路板11和13。不过，对于电极12和14之间的电连接，除了如该实施例所示的两个电极12和14通过金属粒子22连接的情形之外，还包括两个电极12和14相互直接接触而连接的情形以及两个电极12和14通过预先形成的金属凸点、焊料凸点或者预涂层而连接的情形。
工业应用性
在通过结合电子部件得到的电子部件安装结构中，可以防止发生裂纹和剥离。

Claims (8)

1.一种电子部件安装粘合剂，包括：
热固性树脂；以及
金属粒子，分散于所述热固性树脂内且熔点低于所述热固性树脂的固化材料的玻璃转变温度。
2.如权利要求1所述的电子部件安装粘合剂，其中所述金属粒子的含量不超过体积比的20％。
3.如权利要求1所述的电子部件安装粘合剂，其中所述金属粒子是由包含Sn以及选自Pb、Ag、Zn、Bi、In、Sb和Cu的至少一种金属的合金制成。
4.如权利要求1所述的电子部件安装粘合剂，其中无机填充剂分散于所述热固性树脂内。
5.如权利要求1所述的电子部件安装粘合剂，其中所述金属粒子的粒径为30μm以下。
6.如权利要求1所述的电子部件安装粘合剂，其中所述金属粒子的熔点比所述热固性树脂的固化材料的玻璃转变温度低10℃以上。
7.一种电子部件安装结构，包括：
具有电极的第一电子部件；
具有电极的第二电子部件，所述第二电子部件的电极电连接到所述第一电子部件的电极；以及
粘合剂固化材料，所述粘合剂固化材料通过固化主要由热固性树脂制成的电子部件安装粘合剂而得到，并且所述粘合剂固化材料连接两个电子部件，
其中所述粘合剂固化材料中包含金属离子，所述金属离子的熔点低于所述热固性树脂的固化材料的玻璃转变温度。
8.如权利要求7所述的电子部件安装结构，其中所述金属粒子的熔点比所述热固性树脂的固化材料的玻璃转变温度低10℃以上。
CN2007800016737A 2006-09-15 2007-09-13 电子部件安装粘合剂及电子部件安装结构 Active CN101361413B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2006251070A JP4830744B2 (ja) 2006-09-15 2006-09-15 電子部品実装用接着剤及び電子部品実装構造体
JP251070/2006 2006-09-15
PCT/JP2007/068331 WO2008032870A2 (en) 2006-09-15 2007-09-13 Electronic components mounting adhesive and electronic components mounting structure

Publications (2)

Publication Number Publication Date
CN101361413A true CN101361413A (zh) 2009-02-04
CN101361413B CN101361413B (zh) 2012-05-23

Family

ID=38813101

Family Applications (1)

Application Number Title Priority Date Filing Date
CN2007800016737A Active CN101361413B (zh) 2006-09-15 2007-09-13 电子部件安装粘合剂及电子部件安装结构

Country Status (7)

Country Link
US (1) US8034447B2 (zh)
EP (1) EP2062470A2 (zh)
JP (1) JP4830744B2 (zh)
KR (1) KR20090052300A (zh)
CN (1) CN101361413B (zh)
TW (1) TW200814257A (zh)
WO (1) WO2008032870A2 (zh)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102117781A (zh) * 2009-12-11 2011-07-06 株式会社日立制作所 接合结构及其制造方法
CN104221480A (zh) * 2012-04-19 2014-12-17 松下知识产权经营株式会社 电子零件安装方法及电子零件安装线

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010062339A (ja) * 2008-09-04 2010-03-18 Dainippon Printing Co Ltd 部品内蔵配線板、部品内蔵配線板の製造方法
JP5029587B2 (ja) * 2008-12-09 2012-09-19 パナソニック株式会社 電子部品実装構造および電子部品実装方法
JP5672823B2 (ja) * 2010-07-30 2015-02-18 コニカミノルタ株式会社 超音波探触子用バッキング材、それを用いた超音波探触子、及び超音波医用画像診断装置
JP5853135B2 (ja) * 2012-03-15 2016-02-09 パナソニックＩｐマネジメント株式会社 電極接合方法および回路部材接合ライン
CN104603922B (zh) 2012-08-31 2018-01-26 松下知识产权经营株式会社 部件安装结构体
JP6358535B2 (ja) * 2013-04-26 2018-07-18 パナソニックＩｐマネジメント株式会社 配線板間接続構造、および配線板間接続方法
US9902880B2 (en) 2015-03-25 2018-02-27 Panasonic Intellectual Property Management Co., Ltd. Film material, electronic component using film material, and method for producing electronic component
US20190371766A1 (en) * 2016-12-19 2019-12-05 Intel Corporation Integrated circuit die stacks
KR101880047B1 (ko) 2017-04-26 2018-07-20 (주)노피온 부품실장 공정시간 단축을 위한 이방성 도전 접착제의 제조방법
KR101890700B1 (ko) 2017-04-26 2018-08-23 (주)노피온 부품 실장방법
KR101880053B1 (ko) * 2017-04-26 2018-07-20 (주)노피온 갭퍼를 포함하는 이방성 도전 접착제의 제조방법 및 갭퍼를 이용하는 부품 실장방법
KR102106996B1 (ko) 2017-12-28 2020-05-07 주식회사 노피온 솔더입자를 포함한 시트를 사용한 부품 실장 방법
US11039531B1 (en) 2018-02-05 2021-06-15 Flex Ltd. System and method for in-molded electronic unit using stretchable substrates to create deep drawn cavities and features
US10800948B2 (en) * 2018-08-02 2020-10-13 Xerox Corporation Conductive adhesive compositions and method for the same
US10964660B1 (en) * 2018-11-20 2021-03-30 Flex Ltd. Use of adhesive films for 3D pick and place assembly of electronic components
US10896877B1 (en) 2018-12-14 2021-01-19 Flex Ltd. System in package with double side mounted board
US10568215B1 (en) 2019-05-20 2020-02-18 Flex Ltd. PCBA encapsulation by thermoforming

Family Cites Families (32)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5964685A (ja) * 1982-10-05 1984-04-12 Shin Etsu Polymer Co Ltd 異方導電熱接着性フイルム
GB2152060B (en) * 1983-12-02 1987-05-13 Osaka Soda Co Ltd Electrically conductive adhesive composition
US4939913A (en) * 1989-05-19 1990-07-10 Scungio Roger V Ornamental watch accessory
US5136365A (en) * 1990-09-27 1992-08-04 Motorola, Inc. Anisotropic conductive adhesive and encapsulant material
US5445308A (en) * 1993-03-29 1995-08-29 Nelson; Richard D. Thermally conductive connection with matrix material and randomly dispersed filler containing liquid metal
US5578527A (en) * 1995-06-23 1996-11-26 Industrial Technology Research Institute Connection construction and method of manufacturing the same
JP3311215B2 (ja) * 1995-09-28 2002-08-05 株式会社東芝 半導体装置
JPH1056099A (ja) * 1996-08-12 1998-02-24 Shinko Electric Ind Co Ltd 多層回路基板およびその製造方法
US5949138A (en) 1996-10-31 1999-09-07 Texas Instruments Incorporated Heat spreader
US5985043A (en) 1997-07-21 1999-11-16 Miguel Albert Capote Polymerizable fluxing agents and fluxing adhesive compositions therefrom
JPH10256687A (ja) * 1997-03-14 1998-09-25 Matsushita Electric Ind Co Ltd ビアホール充填用導体ペースト組成物とそれを用いたプリント配線基板
WO1999001519A1 (fr) * 1997-07-04 1999-01-14 Nippon Zeon Co., Ltd. Adhesif pour composants semi-conducteurs
US6335571B1 (en) 1997-07-21 2002-01-01 Miguel Albert Capote Semiconductor flip-chip package and method for the fabrication thereof
US6017634A (en) 1997-07-21 2000-01-25 Miguel Albert Capote Carboxyl-containing polyunsaturated fluxing agent and carboxyl-reactive neutralizing agent as adhesive
EP1025587A4 (en) 1997-07-21 2000-10-04 Aguila Technologies Inc SEMICONDUCTOR FLIPCHIP PACK AND PRODUCTION METHOD THEREFOR
US5985456A (en) 1997-07-21 1999-11-16 Miguel Albert Capote Carboxyl-containing polyunsaturated fluxing adhesive for attaching integrated circuits
US5965064A (en) * 1997-10-28 1999-10-12 Sony Chemicals Corporation Anisotropically electroconductive adhesive and adhesive film
US6013713A (en) * 1997-11-06 2000-01-11 International Business Machines Corporation Electrode modification using an unzippable polymer paste
US6399426B1 (en) 1998-07-21 2002-06-04 Miguel Albert Capote Semiconductor flip-chip package and method for the fabrication thereof
JP4099878B2 (ja) * 1998-10-23 2008-06-11 日立化成工業株式会社 回路部材の実装方法
US7467742B1 (en) * 2000-02-24 2008-12-23 International Business Machines Corporation Electrically conducting adhesives for via fill applications
US6802446B2 (en) 2002-02-01 2004-10-12 Delphi Technologies, Inc. Conductive adhesive material with metallurgically-bonded conductive particles
JP4152196B2 (ja) * 2003-01-10 2008-09-17 スリーエム イノベイティブ プロパティズ カンパニー 平面多導体の接続方法、該接続方法で接続される部分を含む電気電子部品、該接続方法で接続される平面多導体、および、平面多導体の接続システム
WO2004070827A1 (ja) 2003-02-05 2004-08-19 Senju Metal Industry Co., Ltd. 端子間の接続方法及び半導体装置の実装方法
JP2004356618A (ja) 2003-03-19 2004-12-16 Ngk Spark Plug Co Ltd 中継基板、半導体素子付き中継基板、中継基板付き基板、半導体素子と中継基板と基板とからなる構造体、中継基板の製造方法
JP2004356620A (ja) * 2003-03-19 2004-12-16 Ngk Spark Plug Co Ltd 中継基板、半導体素子付き中継基板、中継基板付き基板、半導体素子と中継基板と基板とからなる構造体
US7888411B2 (en) 2003-04-01 2011-02-15 Creative Electron, Inc. Thermally conductive adhesive composition and process for device attachment
WO2004090942A2 (en) * 2003-04-01 2004-10-21 Aguila Technologies, Inc. Thermally conductive adhesive composition and process for device attachment
JP4539025B2 (ja) 2003-04-28 2010-09-08 Ｄｉｃ株式会社 液状封止材用樹脂組成物及び半導体装置
JP2006173586A (ja) * 2004-11-18 2006-06-29 Ist:Kk 温度自己制御性成形体およびその製造方法
JP2006169395A (ja) 2004-12-16 2006-06-29 Nagase Chemtex Corp アンダーフィル樹脂組成物
EP1830399A4 (en) * 2004-12-17 2012-07-11 Panasonic Corp RESIN COMPOSITION FOR FLIP CHIP CAPSULATION AND RESIN COMPOSITION FOR FORMING A BULB

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102117781A (zh) * 2009-12-11 2011-07-06 株式会社日立制作所 接合结构及其制造方法
CN102117781B (zh) * 2009-12-11 2013-09-25 株式会社日立制作所 接合结构及其制造方法
CN104221480A (zh) * 2012-04-19 2014-12-17 松下知识产权经营株式会社 电子零件安装方法及电子零件安装线
CN104221480B (zh) * 2012-04-19 2017-09-08 松下知识产权经营株式会社 电子零件安装方法及电子零件安装线

Also Published As

Publication number Publication date
CN101361413B (zh) 2012-05-23
EP2062470A2 (en) 2009-05-27
WO2008032870A3 (en) 2008-05-29
WO2008032870A2 (en) 2008-03-20
JP2008069316A (ja) 2008-03-27
KR20090052300A (ko) 2009-05-25
US20090291314A1 (en) 2009-11-26
TW200814257A (en) 2008-03-16
JP4830744B2 (ja) 2011-12-07
US8034447B2 (en) 2011-10-11

Similar Documents

Publication Publication Date Title
CN101361413B (zh) 电子部件安装粘合剂及电子部件安装结构
US6802446B2 (en) Conductive adhesive material with metallurgically-bonded conductive particles
KR101355709B1 (ko) 접속 구조체의 제조 방법 및 그로부터 제조된 접속 구조체
JP3454509B2 (ja) 導電性材料の使用方法
US7202569B2 (en) Semiconductor device and manufacturing method of the same
KR100548114B1 (ko) 땜납 박 및 반도체 장치 및 전자 장치
JP5170685B2 (ja) 導電性接合材料、及び電子装置
KR101221148B1 (ko) 이방성 도전 재료
CN104662118A (zh) 各向异性导电粘接剂
Liu et al. Overview of conductive adhesive joining technology in electronics packaging applications
JPH1145618A (ja) 導電ペースト構造およびその製造方法
CN103460815B (zh) 安装结构体及其制造方法
WO2002071469A1 (fr) Procede de production de dispositifs electriques
JP2010226140A5 (zh)
CN101090610A (zh) 制造多层板的方法
WO2001024968A1 (fr) Flux de soudure, pate de soudure et procede de soudage
CN101361412B (zh) 电子部件安装粘合剂、电子部件安装粘合剂的制作方法、电子部件安装结构及电子部件安装结构的制作方法
US20130088839A1 (en) Board module manufacturing method, board module, and board module assembly
CN107454741B (zh) 导电粒子、电路部件的连接材料、连接构造以及连接方法
JP4236809B2 (ja) 電子部品の実装方法ならびに実装構造
JP6335588B2 (ja) 異方導電性接着剤の製造方法
KR100947783B1 (ko) 반도체 접착 페이스트 조성물
JP2007081198A (ja) 端子間の導電的接続方法
Melton Alternatives of lead bearing solder alloys
KR102556928B1 (ko) 자가 조립형 이방성 도전 접착제 및 이를 이용한 부품 실장 방법

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant