CN101334497B - Polarized light splitting device and manufacture method thereof and equipment and comprise its display - Google Patents

Polarized light splitting device and manufacture method thereof and equipment and comprise its display Download PDF

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Publication number
CN101334497B
CN101334497B CN200710127524.7A CN200710127524A CN101334497B CN 101334497 B CN101334497 B CN 101334497B CN 200710127524 A CN200710127524 A CN 200710127524A CN 101334497 B CN101334497 B CN 101334497B
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deposition
angle
deposit
reflectivity
transmissive layer
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CN101334497A (en
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永田佳秀
佐藤敦
渡边一十六
金志优
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Cheil Industries Inc
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Cheil Industries Inc
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Abstract

A kind of polarized light splitting device, comprise the non-transmissive layer on the transmission matrix component of the pattern of the ridge had on base portion and described base portion and described ridge, wherein, described non-transmissive layer comprises photo-emission part and divides and light absorption part.Described polarized light splitting device comprises: transmission matrix component, and it has the pattern of the ridge on base portion and described base portion, and the non-transmissive layer on ridge, wherein, non-transmissive layer comprises: photo-emission part divides, and light absorption part, wherein, non-transmissive layer be included in further photo-emission part divide and light absorption department divide between center section, the reflectivity of center section is less than reflectivity that photo-emission part divides and is greater than the reflectivity of light absorption part, wherein non-transmissive layer presents the gradual change of reflectivity, the gradual change of reflectivity has the densifie state of reflection and the rarefaction of absorption, wherein, photo-emission part divides, center section and described light absorption part is each has identical material composition, center section presents the gradual change of reflectivity.

Description

Polarized light splitting device and manufacture method thereof and equipment and comprise its display
Technical field
Example embodiment relates to polarized light splitting device, comprises the display of this device, manufactures the method for this device and manufactures the equipment of this device, and relates more specifically to wire grid type polarized light splitting device.
Background technology
Usually, the liquid crystal layer between the polarized light splitting device being arranged at such as polarizing coating can be comprised for the LCD device in the monitor, LCD TV etc. of mobile phone, PDA, laptop computer and desk-top computer and provide the back light unit (BLU) of illumination for it.
Usual use dichroic polarizing coating.But the limitation part of dichroic polarizing coating is that light utilization efficiency is not more than 50% in theory, this is because dichroic polarizing coating absorbs the light of the polarization perpendicular to the axis of homology.
Due to this reason, propose reflection type polarization light-splitting device, it can increase light utilization efficiency by the non-transmissive component of polarized light is reflected back BLU to recycle this component.Specifically, propose wire grid type polarized light splitting device, this device can comprise " wiregrating ", such as there is the pattern of the substantially parallel ridge of conductive material above, it has the pitch less than lambda1-wavelength, to make perpendicular to these grid and the Transmission light of polarization, and make the light reflection being parallel to these grid and polarization.But, exist manufacturing simply and the needs of the large scale polarized light splitting device of economy, this polarized light splitting device can be used for the liquid crystal display device in the monitor, LCD TV etc. of mobile phone, personal digital assistant (PDA), laptop computer and desk-top computer.
Summary of the invention
Therefore, example embodiment relates to polarized light splitting device, comprises the display of this device, manufactures the method for this device and manufactures the equipment of this device, which substantially overcomes one or more limitation due to correlation technique and the problem caused by shortcoming.
Therefore, a feature of embodiment is to provide the polarized light splitting device with reflecting part and the absorption portion stacked gradually.
Therefore, another feature of embodiment is to provide the polarized light splitting device of the center section with reflecting part and absorption portion and intervention, and wherein, the reflectivity in this middle layer is less than the reflectivity of reflecting part and is greater than the reflectivity of absorption portion.
Photo-emission part divides and eachly with light absorption part has identical material composition.Photo-emission part divides can have the first material composition, and light absorption part can have the second material composition being different from the first material composition.First material composition can comprise metal, and the second material composition can comprise metal oxide and/or carbon.
Form non-transmissive layer can comprise by depositing non-transmissive layer according to non-transmissive layer Level Change angle of deposit.Photo-emission part divides and eachly with light absorption part has identical material composition.Form non-transmissive layer can comprise and apply this material composition from the angle different relative at least two of base portion, the first angle in described at least two angles corresponds to photo-emission part and divides, and the second angle in described at least two angles corresponds to light absorption part.
Form non-transmissive layer can comprise and apply this material composition from least two different angular ranges, the first scope in described at least two scopes corresponds to photo-emission part and divides, and the second scope in described at least two scopes corresponds to light absorption part.The angle of deposit (θ H) formed in the deposition subprocess that divides of photo-emission part can have θ 2≤| the scope of θ H|≤θ 1 (θ 2 < θ 1), angle of deposit (θ H) is the angle of the normal direction relative to deposition surface, the angle of deposit (θ L) formed in the deposition subprocess of light absorption part can have θ 3≤| the scope of θ L|≤θ 4 (θ 3 < θ 4), angle of deposit (θ L) is the angle of the normal direction relative to deposition surface, and θ 1, θ 2, θ 3 and θ 4 can meet condition below: 40 °≤θ 1≤70 °, 20 °≤θ 2≤50 °, 60 °≤θ 3 < 90 ° and 60 °≤θ 4 < 90 °.
Photo-emission part divides can have the first material composition, and light absorption part can have the second material composition being different from the first material composition.Non-transmissive layer can comprise center section further between photo-emission part divides and light absorption department divides, and the reflectivity of center section is less than reflectivity that photo-emission part divides and is greater than the reflectivity of light absorption part.Form photo-emission part to divide and can comprise depositing first material, forming light absorption part can comprise depositing second material, and formation center section can comprise the potpourri of deposition first and second material.The method can comprise simultaneously from corresponding first and second positions relative to transmission matrix component by the first material and the second deposition of material on transmission matrix component, and from the 3rd position between the first and second positions, the potpourri of the first and second materials to be deposited on transmission matrix component.The method can comprise further provides at least one hole between the first and second positions, and at least one hole described can be configured to the deposition of at least one in adjustment first and second material.
The method can comprise: along with the bearing of trend of ridge approximately perpendicular first direction transmission matrix component being striden across the first hole and being divided to form photo-emission part on ridge by deposition of material by the first hole, and along first direction transmission matrix component striden across the second hole and by the second hole by deposition of material on photo-emission part divides to form light absorption part.
The method can comprise: along with the bearing of trend of ridge approximately perpendicular first direction transmission matrix component striden across the first hole and by the first hole by deposition of material on ridge to form light absorption part, and along first direction transmission matrix component striden across the second hole and by the second hole, deposition of material divided to form photo-emission part in light absorption part.
At least one above-mentioned and further feature and advantage can comprise the display device of liquid crystal board, back light unit and polarized light splitting device by providing a kind of and realize.Polarized light splitting device can comprise: transmission matrix component, and it has the pattern of the ridge on base portion and this base portion; And non-transmissive layer, it is positioned on ridge.Non-transmissive layer can comprise photo-emission part and divide and light absorption part.
Back light unit can be arranged to relative with ridge, makes base portion between back light unit and ridge, and photo-emission part divide can between ridge and light absorption department divide.Back light unit can be arranged to relative with base portion, makes ridge between back light unit and base portion, and light absorption part can between ridge and photo-emission part divide.
At least one above-mentioned and further feature and advantage can realize for the manufacture of the equipment of polarized light splitting device by providing a kind of, this polarized light splitting device comprises transmission matrix component, this equipment comprises sedimentary origin, is configured to transfer assembly transmission matrix component being conveyed through sedimentary origin and the hole be placed between sedimentary origin and transmission matrix component, and this hole is configured to regulate transmission matrix component to the exposure of sedimentary origin.This equipment can be configured to be deposited on transmission matrix component by deposition materials from least two angular ranges relative to transmission matrix component.
In the first scope at least two angular ranges described in this hole can be configured to the exposure of transmission matrix component to sedimentary origin to be limited in, and this equipment can comprise the second hole be placed between sedimentary origin and transmission matrix component further, in the second scope at least two angular ranges described in this second hole is configured to the exposure of transmission matrix component to sedimentary origin to be limited in.
Sedimentary origin can be configured to be deposited on transmission matrix component by the first deposition materials in the first scope in described at least two angular ranges, and this equipment can comprise the second sedimentary origin further, this second sedimentary origin to be configured to the second deposition of material in the second scope in described at least two angular ranges on transmission matrix component.
Accompanying drawing explanation
Describe example embodiment in detail by reference to accompanying drawing, other advantage of above and other object, characteristic sum will become more obvious to those skilled in the art, in the accompanying drawings:
Fig. 1 illustrates the perspective diagram of the example embodiment of polarized light splitting device;
Fig. 2 illustrates the cross-sectional view got along the line A-A in Fig. 1;
Fig. 3 illustrates the schematic diagram of the example embodiment of the equipment for the manufacture of polarized light splitting device;
Fig. 4 illustrates the enlarged drawing of the part " a " in Fig. 3;
Fig. 5 illustrates the enlarged drawing of the part " b " in Fig. 3;
Fig. 6 illustrates the enlarged drawing of the part " c " in Fig. 3;
Fig. 7 illustrates the curve map of the relation illustrated between the reflectivity of deposition materials and angle of deposit;
Fig. 8 illustrates the cross sectional representation of another example embodiment of polarized light splitting device;
Fig. 9 illustrates the schematic diagram of another example embodiment of the equipment for the manufacture of polarized light splitting device; And
Figure 10 a and 10b respectively illustrates the cross sectional representation of the example embodiment of polarized light splitting device and comparator device.
Embodiment
Be that the full content of the Japanese patent application No.2006-178415 of " Polarized-LightSplittingDeviceandManufacturingMethodTher eof " is incorporated herein by reference at the title being filed in Japan Office on June 28th, 2006.
Now, with reference to accompanying drawing, example embodiment will be described more all sidedly hereinafter; But example embodiment can be implemented in different forms, and should not be construed as and be confined to the embodiments set forth herein.On the contrary, provide these embodiments, to make the disclosure be thorough in complete, and scope of the present invention is conveyed to those skilled in the art all sidedly.
In the accompanying drawings, in order to make explanation clear, the yardstick in Ceng He district can be exaggerated.Be also to be understood that when one deck or element be called as another layer or substrate " on " time, directly on another layer or substrate, or also can there is intervening layer in it.In addition, should be appreciated that, when one deck is called as at another layer of D score, directly under the other layer, also can there is one or more intervening layer in it.In addition, be also to be understood that when one deck be called as two-layer " between " time, its can be this two-layer between only layer, or also can there is one or more intervening layer.Herein, same label indicates same element.
Fig. 1 illustrates the perspective diagram of the polarized light splitting device 10 (20,30,40) according to the first to the four example embodiment.Polarized light splitting device 10 (20,30,40) is separated polarized light component by making incident light transmission or reflection according to the polarization direction of incident light.Polarized light splitting device 10 (20,30,40) can be the membranous type wire-grid polarizer (WGP) with diffraction grid, and these diffraction grid have the pitch less than lambda1-wavelength.Polarized light splitting device 10 (20,30,40) can comprise transmission matrix component 1, such as transmission film, and it can have little relief pattern in its surface, the pattern of such as substantially parallel ridge, wherein has corresponding paddy between the ridges.Non-transmissive layer 2 can the front end of male portion of disposed thereon, transmission matrix component 1, namely on ridge.
Transmission matrix component 1 can comprise multiple grid portion 1b, i.e. convex (ridge) part, and it can have preset width W and can be generally parallel that the grid of P are formed on film shape base portion 1a (see Fig. 2 and Fig. 8) each other with pitch.Here, grid pitch P can be very little gap, such as narrow than the predetermined wavelength of incident light.
Such as, when with time in the lcd device, the polarized light in the separable visible-range of polarized light splitting device 10, the light such as produced by BLU.In this case, grid pitch P can be the half of visible wavelength or less.In implementing one, grid pitch P can be less than about 200nm, such as, be less than about 150nm.In another is implemented, grid pitch P can be less than about 1/5th of visible wavelength.
The grid pitch P of grid portion 1b and the ratio of width W can be about 1 to about 0.5, and namely the value of W/P can be about 1 to about 0.5.In implementing one, the value of W/P in about ± 0.3, such as, can regulate in the scope of 0.5 ± 0.3 (0.2≤W/P≤0.8), and this is applicable to specific application.Thus, when regulating the value of W/P, if the value of W/P is less than about 0.5, then can reduce degree of polarization a little, and the amount of transmitted light can be increased.
Transmission matrix component 1 can by being such as selected to make the appropriate light transmissive synthetic resin in selected wavelength coverage make.Synthetic resin can comprise such as polyethylene terephthalate (PET), polycarbonate (PC) and/or polymethylmethacrylate (PMMA).
The all surfaces of transmission matrix component 1 is not needed to be flat.Preferably, the shape on this surface stops Transmission light within bounds.
Fig. 2 illustrates according to first and the 3rd cross-sectional view got along the line A-A in Fig. 1 of example embodiment.
Now, the first example embodiment of polarized light splitting device 10 is described with reference to Fig. 1 and Fig. 2.
With reference to figure 2, non-transmissive layer 2 can present the reflectivity reduced to top from its underpart.The change of reflectivity can be progressively or gradually, and can be dull.More specifically, non-transmissive layer 2 can be deposited on transmission matrix component 1 and can comprise be provided in grid portion 1b before or high reflectance part 2a on nonreentrant surface and be provided in the antiradar reflectivity part 2b of topmost of non-transmissive layer 2.High reflectance part 2a and antiradar reflectivity part 2b macroscopically can be characterized by reflecting surface and light-absorbing surface respectively.But, high reflectance part 2a and antiradar reflectivity part 2b microcosmic can be characterized by the execution light reflection of non-transmissive layer 2 and the part of light absorption respectively.As used herein, light absorption refers to specific surface and divides to the photo-emission part of light source the reflectivity levels that the reflectivity levels of 2a is little.
Antiradar reflectivity part 2b can allow light to be transmitted to a certain extent.But antiradar reflectivity part 2b can present light absorption, the light be transmitted in non-transmissive layer 2 is made not to be transmitted through antiradar reflectivity part 2b.Due to this reason, such as Transmission light protective finish can be formed dividually with antiradar reflectivity part 2b.
Amount, composition and/or structure that the reflectivity of non-transmissive layer 2 changes by such as changing the deposition materials in non-transmissive layer 2 realize.In implementing one, reflecting material such as aluminium can be used as deposition materials.Non-transmissive layer 2 makes the structure of deposition materials to change from densifie state (reflection) to rarefaction (absorption) by the angle of deposit changing this material between the Formation period of non-transmissive layer 2 to be formed.Aluminium may be especially suitable, this is because depend on angle of deposit, aluminium can present the change of significant reflectivity.Such as, but in the wavelength coverage of visible ray, other material of silver also can present the reflectivity change of expectation.
In implementing one, non-transmissive layer 2 can comprise further and to be provided between high reflectance part 2a and antiradar reflectivity part 2b and to have the center section 2c of intermediate reflectivity.When non-transmissive layer 2 comprises center section 2c, center section 2c can present the gradual change of reflectivity.Once suitably determine the reflectivity of high reflectance part 2a and antiradar reflectivity part 2b, the change of the reflectivity of center section 2c just suitably can be determined.Such as, the amount of this material, composition and/or structure can be changed.When forming center section 2c, may it is desirable that consider that center section 2c is on the impact of the total intensity of non-transmissive layer 2.In implementing one, the composition of center section 2c can such as change monotonously.Such as, non-transmissive layer 2 can be formed with three-decker, make high reflectance part 2a and antiradar reflectivity part 2b have suitably large thickness to perform corresponding reflection and absorption function, and the composition of center section 2c can between high reflectance part 2a and antiradar reflectivity part 2b smooth change.In another is implemented, the reflectivity of non-transmissive layer 2 can such as change step by step as sandwich construction.Thus, may it is desirable that avoid the large sudden change of the reflectivity of the boundary such as between layer.
The reflectivity of high reflectance part 2a can be high, to increase the light utilization efficiency of polarized light splitting device 10.In addition, the reflectivity of antiradar reflectivity part 2b can be low, to increase the contrast of polarized light splitting device 10.In implementing one, the reflectivity of antiradar reflectivity part 2b can be less than about 40%, and such as about 30% or less.
At work, for from the light source of such as BLU205 to the incident light advanced in the rear surface of the grid portion 1b of transmission matrix component 1, polarized light splitting device 10 can make the Transmission light of the polarized component had on a direction, but the light of the polarized component had on other direction can be made to reflect.Reflected light can be reflected back to light source.
Such as, with reference to figure 2, when light source as BLU205 be placed in polarized light splitting device 10 times (such as in the side relative with the LCD plate 210 in display) and irradiate light to polarized light splitting device 10 time, (its electric field oscillation direction is perpendicular to grid bearing for horizontal magnetic (TM) the wave component 3M of polarized light splitting device 10, namely left-to-right in Fig. 2, grid bearing is the bearing of trend of ridge, the paper perpendicular to Fig. 2) upwards can be transmitted through grid portion 1b.
On the other hand, (its electric field oscillation direction is parallel to grid bearing to transverse electric (TE) wave component 3E, i.e. plane interior to outer of Fig. 2) grid portion 1b can not be transmitted through and can be reflected by high reflectance part 2a, make reflected light component 3R turn back to light source.So reflected light component 3R can in this device interreflection, and to be irradiated to again on polarized light splitting device 10.Like this, because reflected light component 3R is reused by reflection, instead of absorbed, so light utilization efficiency can increase.
Equally, when light is from the external world, when being namely irradiated on polarized light splitting device 10 from the top Fig. 2, TM wave component 4M can be transmitted by transmission matrix component 1, and TE wave component 4E can not be transmitted.TE wave component 4E can be absorbed by antiradar reflectivity element 2b at least in part.Like this, because antiradar reflectivity part 2b can have relatively low reflectivity, so a part of light can be absorbed in antiradar reflectivity part 2b, thus the amount of the light upwards reflected of decaying also strengthens the contrast of shown image thus.When polarized light splitting device 10 is with time in the lcd device, TM wave component 4M and TE wave component 4E may correspond in exterior light.
Hereinafter, by a kind of method and apparatus for the manufacture of the polarized light splitting device 10 according to the first example embodiment of description.
When metal or metallic compound are used as deposition materials, the reflectivity of deposition materials can be depending on angle of deposit.The method and apparatus that will describe adopts this characteristic to change the reflectivity of non-transmissive layer 2 by changing angle of deposit.
Fig. 3 illustrates the schematic diagram of the example embodiment of the equipment for the manufacture of polarized light splitting device 10, and Fig. 4 respectively illustrates the enlarged drawing of part " a " in Fig. 3, " b " and " c " to 6.In addition, Fig. 7 illustrates the curve map of the relation illustrated between the reflectivity of deposition materials and angle of deposit.In the figure 7, transverse axis refers to angle of deposit (°), and the longitudinal axis refers to the reflectivity (%) at 550nm wavelength place.
Polarized light splitting device manufacturing equipment 100 shown in Fig. 3 can be used for manufacturing above-mentioned polarized light splitting device 10, and can comprise the hole of the adjustment deposition of drum cooler 5, deflector roll 6 and 7, sedimentary origin 9 and such as deposition shield 8.Deposition shield 8 can be fixed to angle of deposit determination component or can be the part of angle of deposit determination component.These parts can be included in vacuum chamber (not shown).
Drum cooler 5 can cool transmission matrix component 1 to stablize its temperature, and can transmit transmission matrix component 1 along the circumferencial direction of drum cooler 5.With reference to figure 3, when forming polarized light splitting device 10, drum cooler 5 can be turned clockwise with constant speed by motor (not shown).The rotating shaft of drum cooler 5 can be placed on the direction perpendicular to the paper of Fig. 3, and the rotating shaft of drum cooler 5 is extended perpendicular to the paper of Fig. 3.
Deflector roll 6 can rotate together with drum cooler 5, and bootable transmission matrix component 1 is to the transmission of drum cooler 5.
Relief pattern (see Fig. 4) the i.e. grid portion 1b of transmission matrix component 1 can extend along the direction identical with the rotating shaft of drum cooler 5, and namely bearing of trend can perpendicular to the paper of Fig. 3.Base portion 1a can be wound around drum cooler 5 and be transmitted by the rotation of drum cooler 5.
Deflector roll 7 can rotate together with drum cooler 5, and guides it to transmit when the transmission matrix component 1 it being formed with non-transmissive layer 2 discharges from drum cooler 5.
Sedimentary origin 9 can be configured to deposition materials 11 to be deposited on transmission matrix component 1, and can heat and jet deposition material 11.In the exemplary embodiment, sedimentary origin 9 can be similar to the centre of transmission matrix component 1 transfer path be positioned at below drum cooler 5.Therefore, deposition materials 11 can upwards spread and radiation-curable shape scatter.In the exemplary embodiment, the axis of the injection of deposition materials 11 can be located substantially on the vertical direction in Fig. 3.
Deposition shield 8 between sedimentary origin 9 and drum cooler 5, and can partly cover drum cooler 5.Deposition shield 8 can comprise one or more hole.In implementing one, deposition shield 8 can comprise two hole 8a and hole 8b, and it is each has predetermined width.When transmission matrix component 1 is transmitted by drum cooler 5, hole 8a and hole 8b can determine by the position of deposition shield 8 to jet deposition material 11 on transmission matrix component 1.
Hole 8a can be positioned at the upstream side of transmission matrix component 1 direction of transfer of the axis of the injection relative to deposition materials 11.As shown in the enlarged drawing of the part " b " in Fig. 5, (when transmission matrix component 1 along drum cooler 5 circumference transmit time, normal direction relative to transmission matrix component 1) angle of deposit can offset from normal direction to the downstream of direction of transfer, wherein, when transmission matrix component 1 is delivered through via hole 8a along drum cooler 5, offset and change in an angular range.Angle of deposit can start from direction of transfer upstream side angle θ 1 and change in the angular range ending at the angle θ 2 in the downstream of direction of transfer.In implementing one, θ 2 can be greater than for hole 8a, θ 1,40 °≤θ 1≤70 °, and 20 °≤θ 2≤50 °.
Hole 8b can be positioned at the downstream of transmission matrix component 1 direction of transfer of the axis of the injection relative to deposition materials 11.As shown in the amplifier section of " c " in Fig. 6, the angle of deposit of the normal direction of the transmission matrix component 1 transmitted relative to the circumference along drum cooler 5 can offset from normal direction to the upstream side of direction of transfer, wherein, when transmission matrix component 1 is delivered through via hole 8b along drum cooler 5, offset and change in an angular range.Angle of deposit can start from direction of transfer upstream side angle θ 3 and change in the angular range ending at the angle θ 4 in the downstream of direction of transfer.In implementing one, θ 4 can be less than for hole 8b, θ 3,60 °≤θ 3 < 90 °, and 60 °≤θ 4 < 90 °.
Then, a kind of manufacturing equipment 100 that uses will be described to manufacture the method for polarized light splitting device 10.
Transmission matrix component 1 such as impresses (imprint) process by suitable process and manufactures, such as, to form grid portion 1b thereon, the relief pattern of ridge.Moulding process can comprise and such as uses the operation of such as beamwriter lithography and/or etching and form the main mould with fine structure, and the shape of this mould is transcribed into plastic foil.With direct by using chemical etching to be formed by film patterning compared with the method for relief pattern, moulding process can provide advantage that is extensive and low cost.
Transmission matrix component 1 can be guided by deflector roll 6 and be wound around drum cooler 5, and wherein, 1b orientation in grid portion is outside, namely with the radial direction of drum cooler 5 away from drum cooler 5.Transmission matrix component 1 can along the circumference transmission of drum cooler 5.
When being arrived region (the some V1 in Fig. 5) of the injected passing hole 8a of deposition materials 11 by the transmission matrix component 1 transmitted, first deposition subprocess can start, wherein, the deposition materials 11 be deposited starts the bottom 2a of the high reflectance forming non-transmissive layer 2.Specifically, the nonreentrant surface of grid portion 1b can be applied by deposition materials 11, and deposition materials 11 is injected passing hole 8a from angle of deposit θ 1.When transmission matrix component 1 utilizes the rotation of drum cooler 5 to be striden across hole 8a by transmission, deposition process is sustainable carries out, and angle of deposit consecutive variations is until angle θ 2 simultaneously, thus completes the formation of the bottom 2a of non-transmissive layer 2.Here, when transmission matrix component 1 arrives position (the some V2 in Fig. 5) of the deposition of cover 8 barrier deposition material 11, the first deposition subprocess can terminate.
When being arrived region (the some V3 in Fig. 6) of the injected passing hole 8b of deposition materials 11 by the transmission matrix component 1 transmitted, second deposition subprocess can start, wherein, the deposition materials 11 be deposited starts the top 2b of the antiradar reflectivity forming non-transmissive layer 2.Specifically, top 2b can be formed on the bottom 2a that formed in the first deposition subprocess by deposition materials 11, and deposition materials 11 is injected by empty 8b within the scope of the angle of deposit starting from angle θ 3.When transmission matrix component 1 is striden across this hole by transmission, deposition process is sustainable carries out, and angle of deposit varies continuously to angle θ 4 simultaneously, thus completes the formation of the top 2b of non-transmissive layer 2.Here, when transmission matrix component 1 arrives position (the some V4 in Fig. 6) of the deposition of this cover barrier deposition material 11, the second deposition subprocess can terminate.
After non-transmissive layer 2 is such as formed entirely on transmission matrix component 1 by deposition process, the transmission matrix component 1 with non-transmissive layer 2 can send out manufacturing equipment 100 by deflector roll 7.
Fig. 7 illustrates the curve map of the relation illustrated between the reflectivity of deposition materials and angle of deposit.Situation shown in Fig. 7 is the experimental result of the reflectivity measuring plastic foil (identical with the material of transmission matrix component 1), and this plastic foil is formed with al deposition layer by changing angle of deposit.As can be seen from Figure 7, the approximate line 200 corresponded in this curve map of reflectivity change.Therefore, in the normal direction (angle of deposit is 0 °) of deposition surface, reflectivity is maximum, and reduces pro rata with the inclination relative to normal direction.
Be not bound by any particular theory, the change of above-mentioned reflectivity is considered to because when angle of deposit hour, and film is fine and close and be formed uniformly, and when angle of deposit is large, the composition of film is in comparatively rarefaction.Therefore, although aluminium may be high reflectance, if angle of deposit is large, then corresponding al deposition sample may be dark-coloured and may have antiradar reflectivity and low-light level.
In implementing one, the first deposition subprocess can form high reflectance part 2a on the nonreentrant surface of grid portion 1b, and can form a part (its reflectivity reduces gradually) of center section 2c on high reflectance part 2a.Second deposition subprocess can form remainder (its reflectivity reduces gradually) and the antiradar reflectivity part 2b of center section 2c.
As mentioned above, according to the position relationship between sedimentary origin 9 and deposition shield 8, hole 8a can be used for forming high reflectance part 2a, and hole 8b can be used for forming antiradar reflectivity part 2b.
In implementing one, if angle of deposit θ 2 is set to equal angle of deposit θ 3 (θ 2=θ 3), then center section 2c can be formed as making its reflectivity gradually and changing continuously.
In another is implemented, if angle of deposit θ 2 is set to be less than angle of deposit θ 3 (θ 2 < θ 3), then center section 2c can be formed as reflectivity is changed discontinuously, and the interphase on this discontinuous surface different by reflectivity is formed.Should be appreciated that, this discontinuous difference that significantly can be less than the reflectivity of high reflectance part 2a and the reflectivity of antiradar reflectivity part 2b of reflectivity.
In this case, because noncontinuous surface can be made up of same material, and compared with the different structure of the structure of high reflectance part 2a and antiradar reflectivity part 2b is directly combined, structure inconsistency can be relatively little, so, the brittleness of resulting structures can reduce, and the adhesion between part 2a and part 2b can increase, and can be beneficial to manufacture.
Deposition process performs by changing angle of deposit according to the floor height of sedimentary deposit.Deposition fraction 2a and 2b can use same deposition materials 11 to be formed, and its reflectivity can gradually change.Equally, deposition process can be divided into the first and second deposition subprocess can with different angle of deposit scopes.Therefore, compared with such as single successive sedimentation process, the sedimentary deposit of reflectivity marked change can easily be formed.In addition, because non-transmissive layer 2 can be formed by same deposition materials, so even when non-transmissive layer 2 is formed by the different first and second deposition subprocess, the structural integrity of the boundary formed thus also can strengthen.In addition, even if angle of deposit may change discontinuously, the globality of sedimentary deposit also can improve, and this can help the problem being avoided such as grid avalanche, allows to form reliable wire-grid polarizer (WGP).
In above-mentioned enforcement, for hole 8a, 20 °≤θ 2≤50 °, and for hole 8b, 60 °≤θ 3≤90 °.Equally, as mentioned above, in another is implemented, angle of deposit θ 2 can be set to equal angle of deposit θ 3 (θ 2=θ 3).Be also to be understood that in another enforcement, may it is desirable to arrange θ 2 > θ 3, make on demand, corresponding deposition subprocess can comprise common angular range, and namely they can be overlapping.
Hereinafter, the impact of angle of deposit on the shape of non-transmissive layer 2 and grid will be described.
When the nonreentrant surface (spine) non-transmissive layer 2 being deposited on the grid portion 1b being formed with concavo-convex (ridge-paddy) pattern with the pitch being less than optical wavelength is upper, the shape of sedimentary deposit can change according to angle of deposit.Therefore, the profile being formed as the shape of grid to have expectation may be difficult to.Specifically, if angle of deposit is too little, then the sedimentary deposit on two adjacent gate portion 1b can become connected, and recess (i.e. incident light be transmitted through the valley of intervention) is stopped or part obstructs.On the other hand, if angle of deposit is too large, then can produces deflection at sedimentary deposit place, and the grid of bias can be formed.Therefore, may it is desirable that consider that angle of deposit arranges the scope of angle of deposit on the impact of grid shape.
In table 1 below, show formed on transmission matrix component 1 with fixing angle of deposit there is the sedimentary deposit of same thickness after the reflectivity that produces and grid shape.Angle of deposit is confirmed as the difference with the normal direction of transmission matrix component 1.In the row of " grid shape ", most preferred grid shape represents with " 1 ", and may other desirable grid shape represent with " 2 ", the grid shape that may comprise nonideal characteristic represents with " 3 ".Concrete annotation about grid shape describes in " outward appearance " row.
Table 1
Angle of deposit (°) Reflectivity Grid shape Outward appearance
0 High 3 The top of adjacent gate is connected
10 High 3 The top of adjacent gate is connected
20 High 2 The upper part ground of adjacent gate is connected
30 In 2
40 In 1
50 In 1
60 In 2
70 Low 2 Large grid tilt
80 Low 3 Large grid tilt
90 Low 3 Large grid tilt
As described in Table 1, produce most preferably with the angle of deposit of desirable grid shape in the scope of about 30 ° to about 60 °.With reference to figure 7, the angle of deposit scope of about 30 ° to about 60 ° corresponds respectively to the reflectivity range of about 67% to about 40%.Above result obtains from the experiment carried out under the condition of carrying out depositing with constant angle of deposit.
When being deposited by change angle of deposit, covering whole deposition surface and form desirable reflecting surface to make deposition materials, the time formed needed for film depends on mode of deposition.Therefore, the angle of deposit at the initial or end point place of film formation time can not produce considerable influence to the feature of film.Therefore, above-mentioned angular range suitably can expand to the scope of such as 20 ° to 70 °.
In some cases, the angle of deposit more than 70 ° can cause the deflection of film.But when the thickness of deposited film is thin, this can be avoided or can be inapparent.In this example embodiment, because the first deposition subprocess performs in the scope of inclination not producing grid, then the second deposition subprocess performs under the condition of large angle of deposit, so, the height step-down of the layer in the scope of large angle of deposit, and may the angular range wider than the angular range used in the experimental result shown in Fig. 7 can be used to form excellent grid shape.In other is implemented, while forming excellent grid shape, angle of deposit θ 4 may be set to 90 °, as described in more detail below.Therefore, should be appreciated that, the angular range for θ 1, θ 2, θ 3 and θ 4 can adjust relative to the upper and lower bound of the angle of deposit of deposition subprocess.
Fig. 8 illustrates according to second and the 4th cross-sectional view got along the line A-A in Fig. 1 of example embodiment.
Composition graphs 8 is described the second embodiment of polarized light splitting device 20.
With reference to figure 8, the polarized light splitting device 20 of this example embodiment can be configured to the non-transmissive layer 2 ' of the polarized light splitting device 10 of above-mentioned first example embodiment up/down on grid portion 1b is put upside down.Can be configured to use together with BLU205 according to the polarized light splitting device 20 of the second example embodiment, this BLU205 is arranged on the side with relief pattern of film, is namely arranged on the opposite side of composition graphs 2 at above-described structure.
Polarized light splitting device 20 can be configured so that when light irradiates to non-transmissive layer 2 ', and TM wave component 3M is transmitted and is reflected by high reflectance part 2a ' by polarized light splitting device 20, TE wave component 3E, and the directed light source getting back to such as BLU of reflected light component 3R.By the light source of such as BLU205 is arranged to towards non-transmissive layer 2 ', polarized light splitting device 20 can be used in the lcd device, wherein, the polarized light splitting device 20 of this example embodiment has identical working effect with the polarized light splitting device 10 of the first example embodiment.In addition, possible it is desirable that non-transmissive layer 2 ' to be arranged on inner side, as shown in Figure 8.
When transmission matrix component 1 is arranged on the outside of polarized light splitting device 20, transmission matrix component 1 can be made up of such material, and it has low birefringence and the even also not scattering polarization light when applying deformation process as elongated to it.Therefore, may preferably, the polarized light that transmission matrix component 1 not rescattering is separated by the function of polarized light splitting device 20.
When using manufacturing equipment 100 to manufacture polarized light splitting device 20, the condition that condition and second only by the angle of deposit by first of the first example embodiment the deposition subprocess deposits the angle of deposit of subprocess exchanges, put upside down by above-mentioned first and second subprocess, just can easily manufacture polarized light splitting device 20.Such as, the layout of deposition shield 8 can be configured to make the angle of deposit θ 1 of this second example embodiment, θ 2, θ 3 and θ 4 correspond respectively to angle of deposit θ 4, θ 3, the θ 2 and θ 1 of the first example embodiment.Alternatively, the direction of transfer of transmission matrix component 1 is put upside down by being rotated counterclockwise by drum cooler 5, and the layout of deposition shield 8a and 8b can left/right be put upside down (with reference to figure 3) etc.Because only high reflectance part 2a ' and antiradar reflectivity part 2b ' is different from the first example embodiment relative to the position relationship of transmission matrix component 1, so the non-transmissive layer 2 ' of this second example embodiment can have the working effect identical with the non-transmissive layer 2 of the first example embodiment.
Manufacture method according to this second example embodiment can have such feature, wherein, because the angle of deposit when forming top 2a ' (downside in Fig. 8) of non-transmissive layer 2 is less than the angle of deposit when forming polarized light splitting device 10, so, do not produce grid shape at the top 2a ' of non-transmissive layer 2.
In the first and second example embodiment that composition graphs 2 and Fig. 8 describe, polarization film manufacturing equipment 100 is by the rear surface of support base 1a, Transmission light substrate 1 is transmitted continuously in the direction vertical with the bearing of trend of little relief pattern, wherein the grid portion 1b of Transmission light substrate 1 is formed with the described relief pattern extended on described bearing of trend, and non-transmissive layer 2,2 ' can be deposited on by the Transmission light substrate 1 that transmits.At least one sedimentary origin 9 that this manufacturing equipment can comprise and Transmission light substrate 1 is oppositely arranged, two or more holes 8a, 8b for sedimentary origin 9 of the angle of deposit determination component between sedimentary origin 9 and matrix component 1 and the direction of transfer along matrix component 1 can be arranged on.
Use manufacturing equipment 100, by the ground or change the angle of deposit of the normal direction relative to matrix component 1 from relatively large value to relatively small value from relatively small value to relatively large value of the direction of transfer along matrix component 1, perform deposition process.Angle of deposit determination component is used with single sedimentary origin 9 together with corresponding to two holes 8a, 8b of single sedimentary origin 9, high reflectance deposition fraction 2a, 2a of being formed with relatively little angle of deposit can be produced ' and with antiradar reflectivity deposition fraction 2b, 2b of the formation of relatively large angle of deposit '.By by the order from high reflectance to antiradar reflectivity or the order put upside down, by high reflectance deposition fraction 2a, 2a, ' and antiradar reflectivity deposition fraction 2b, 2b ' is arranged on the transfer path of matrix component 1, perform two deposition subprocess, make when matrix component 1 moves in the transmission direction, the composition of non-transmissive layer 2,2 ' changes to high reflectance from high reflectance to antiradar reflectivity or from antiradar reflectivity.Like this, corresponding reflectivity part 2a, the 2a ' of polarized light splitting device 10,20 and 2b, 2b ' can be formed successively along the direction of transfer of matrix component 1.
Hereinafter, will the polarized light splitting device 30 according to the 3rd example embodiment be described, wherein, use multiple material to manufacture this device.
Refer again to Fig. 2, high reflectance part 2A, antiradar reflectivity part 2B and center section 2C can be comprised according to the polarized light splitting device 30 of the 3rd example embodiment, instead of according to high reflectance part 2a, the antiradar reflectivity part 2b of the polarized light splitting device 10 of the first example embodiment and center section 2c.In the following description, in order to avoid repeating, by only outlines device 30 and manufacture from the device of the first embodiment and manufacture those significantly different aspects.
In the 3rd example embodiment, by changing gradually changing of reflectivity that the amount of deposition materials and/or one-tenth assigns to realize non-transmissive layer 2.
Similar with the first example embodiment, the metal material such as aluminium or silver in visible wavelength range with high reflectance can be used as the deposition materials of high reflectance part 2A.
The material with the reflectivity lower than high reflectance part 2A and/or the material with light absorption can be used as the deposition materials of antiradar reflectivity part 2B.Such as, the deposition materials of antiradar reflectivity part 2B can comprise one or more metal with relative antiradar reflectivity, metal oxide, carbon etc.
Center section 2C can be implemented by the potpourri of the deposition materials of high reflectance part 2A and antiradar reflectivity part 2B.Therefore, the reflectivity of center section 2C can have the value between the reflectivity and the reflectivity of antiradar reflectivity part 2B of high reflectance part 2A.
Usually, when depositing different materials, the adhesion between layer may be weak, and brittleness may increase, and manufacture may become difficulty.But according to the 3rd example embodiment, in the center section 2C between high reflectance part 2A and antiradar reflectivity part 2B, the component ratio of the material of high reflectance part 2A and the material of antiradar reflectivity part 2B can gradually change.Like this, can to weaken or the reduction of adhesion between preventing layer.
Non-transmissive layer 2 according to the 3rd example embodiment " can comprise: upper strata 2B and lower floor 2A, it can comprise the different deposition materials with different amount and/or composition; And the middle layer 2C between upper strata 2B and lower floor 2A, it can comprise the potpourri of the different deposition materials with different amount and/or composition.In this case, even if upper strata 2B and lower floor 2A is made up of the different deposition materials with different amount and/or composition, but because middle layer 2C can be made up of the potpourri of different deposition materials and be provided between upper strata 2B and lower floor 2A, so the remarkable uncontinuity between the surface also can avoiding the material of different amount/composition.Therefore, non-transmissive layer 2 " globality can be strengthened, this can reduce or eliminate the defect of such as grid avalanche, thus produces polarized light splitting device 30 highly reliably.
Hereinafter, with reference to Fig. 9, the method and apparatus 110 for the manufacture of polarized light splitting device 30 is described.
Fig. 9 illustrates the schematic diagram of the example embodiment of the equipment 110 for the manufacture of polarized light splitting device 30.With reference to figure 9, manufacturing equipment 110 can be used for manufacturing polarized light splitting device 30 and can comprise highly reflective material sedimentary origin 15 and antiradar reflectivity material deposition source 16, instead of the single sedimentary origin 9 of manufacturing equipment 100 for the first example embodiment.Equipment 110 can comprise deposition shield 12 and cover plate 14 further, instead of the deposition shield 8 of manufacturing equipment 100 for the first example embodiment.In the following description, in order to avoid repeating, by those significantly different from the method and apparatus of the first example embodiment with equipment 110 for only describing method aspects.
Highly reflective material sedimentary origin 15 and antiradar reflectivity material deposition source 16 can heat and spray corresponding deposition materials 17 and 18, and deposition materials 17 and 18 is respectively used to form high reflectance part 2A and antiradar reflectivity part 2B.Highly reflective material sedimentary origin 15 and antiradar reflectivity material deposition source 16 can lay respectively at the upstream side of the transfer path of transmission matrix component 1 and downstream, toward each other, below drum cooler 5.Therefore, deposition materials 17 can upwards and incline to the left and tiltedly spread, and can to the upstream side of direction of transfer radial scatter.Deposition materials 18 can upwards and spread with being tilted to the right, and can scatter to the downstream of direction of transfer radially.In implementing one, highly reflective material sedimentary origin 15 and antiradar reflectivity material deposition source 16 can be arranged with being substantially mutually symmetrical.
Deposition shield 12 between sedimentary origin 15 and 16 and drum cooler 5, and can partly cover drum cooler 5.Hole 12a, 12b and 12c can be formed in deposition shield 12 with preset width, passing hole 12a, 12b and 12c, and deposition materials 17 and 18 can be injected on transmission matrix component 1.
Hole 12a, 12b and 12c can be arranged by the order in the downstream from the upstream side of direction of transfer to direction of transfer.Hole 12a can be positioned at the upstream side of the direction of transfer of the axis of the injection relative to deposition materials 17, and hole 12c can be positioned at the downstream of the direction of transfer of the axis of the injection relative to deposition materials 18.Equally, hole 12b can be positioned at the downstream of the direction of transfer of the axis of the injection relative to deposition materials 17, and the upstream side of direction of transfer relative to the axis of the injection of deposition materials 18.
Cover plate 14 can be arranged on the centre of hole 12b regularly so that hole 12b is divided into right and left part 12A and 12B, i.e. the downstream aperture 12B in the upstream orifice 12A of the upstream side of direction of transfer and the downstream of direction of transfer.If one end of the hole 12b of upstream side is defined as edge S1, the other end of the hole 12b in downstream is defined as edge S3, and one end of the cover plate 14 of drum cooler 5 side is defined as edge S2, so, upstream orifice 12A can be limited by edge S1 and S2, and downstream aperture 12B can be limited by edge S2 and edge S3.
One or more cover plate 13 also can be provided to be diffused into outside 12a and 12c of hole to prevent deposition materials 17 and 18.
By settling two sedimentary origins 15 and 16 along the direction of transfer of transmission matrix component 1 and the hole 12b of angle of deposit determination component being arranged between two deposited adjacent sources 15,16, the different deposition materials 17 and 18 sprayed from sedimentary origin 15 and 16 are mixed at hole 12b, the intervening deposition subprocess of the potpourri of passing hole 12b depositing deposition material 17 and 18 can be provided for according to the manufacture method of this example embodiment.Therefore, easily center section 2C can be formed by the potpourri of the deposition materials 17 and 18 sprayed from two deposited adjacent sources 15 and 16.
Use the deposition process of polarization film manufacturing equipment 110 can comprise the first deposition subprocess, the second deposition subprocess and the 3rd deposition subprocess, it performs in the position corresponding to hole 12a, 12c and 12b respectively.
In the first deposition subprocess (it corresponds to the first deposition subprocess of the first example embodiment), deposition materials 17 spreads by hole 12a, and high reflectance part 2A can be formed by highly reflective material.
In the second deposition subprocess (it corresponds to the second deposition subprocess of the first example embodiment), deposition materials 18 spreads by hole 12c and can be deposited on the topmost of the sedimentary deposit formed by the 3rd deposition subprocess (being described below).As a result, antiradar reflectivity part 2B can be formed by antiradar reflectivity deposition materials 18.
In the 3rd deposition subprocess, deposition materials 17 is by upstream orifice 12A diffusion, and meanwhile, deposition materials 18 spreads by downstream aperture 18B.Therefore, the potpourri of deposition materials 17 and deposition materials 18 can be deposited to be formed the middle layer 2C can with grading structure.Now, according to corresponding angle of deposit and/or the width of hole 12A and 12B, the deposition position of deposition materials and/or the amount of deposition materials can be changed.Like this, by regulating width and/or the position of upstream side opening 12A and downstream side opening 12B, the mixture ratio of deposition materials 17 and 18 can regulate along direction of transfer.By this adjustment, the component ratio of center section 2C can be controlled and can be changed in such as mode gradually.
Change of component can be regulated on a large scale.But, may it is desirable that uncontinuity between avoiding the influential material surface of the intensity of center section 2C.Such as, when matrix component 1 enters from upstream side to downstream skidding, the component ratio of center section 2C is variable to be turned to and makes that the component ratio of deposition materials 17 reduces gradually and the component ratio of deposition materials 18 increases gradually.
In implementing one, as above in conjunction with as described in the first example embodiment, the antiradar reflectivity material 18 of such as aluminium can present the reflectivity changed according to angle of deposit.Like this, antiradar reflectivity part 2B can be formed as making reflectivity to deposit the similar mode of subprocess step-down gradually with second of the first example embodiment.In this case, material 17 can be identical with 18.Gradually changing by changing the amount of material and/or one-tenth assigns to realize of reflectivity.When the material using reflectivity according to angle of deposit marked change, may it is desirable that regulate angle of deposit scope in the mode being similar to the first example embodiment.The each scope equaling the angle of deposit limited by the hole 8a of the first embodiment of scope of the angle of deposit limited by hole 12a and downstream side opening 12B respectively.Similarly, each scope (label see indicator hole and angle of deposit in Fig. 5 and 6) equaling the angle of deposit limited by the hole 8b of the first example embodiment of the scope of the angle of deposit limited by hole 12c and upstream side opening 12A respectively.
In another is implemented, deposition materials 18 can have intrinsic antiradar reflectivity irrelevant with angle of deposit to a great extent, makes to be formed in the antiradar reflectivity part 2B in its whole thickness with constant reflectance.In this case, suitably angle of deposit can be regulated.This intrinsic antiradar reflectivity material can comprise such as metal oxide and/or carbon.
Then, composition graphs 8 is described the 4th example embodiment, wherein, by the formation reversed order by non-transmissive layer 2, form non-transmissive layer 2 ".
With reference to figure 8, polarization film 40 can be configured so that the non-transmissive layer 2 of polarized light splitting device 30 as above " up/down puts upside down.Like this, polarized light splitting device 40 can be configured so that the non-transmissive layer 2 of the polarized light splitting device 30 according to the 3rd example embodiment " high reflectance part 2A, antiradar reflectivity part 2B and center section 2C by the non-transmissive layer 2 of the 4th example embodiment " ' high reflectance part 2A ', antiradar reflectivity part 2B ' and center section 2C ' replaced.That is, the 4th example embodiment can be combined with the material composition of the change of the 3rd example embodiment by the order of the part of the first example embodiment.
The polarized light splitting device 40 of the 4th example embodiment can have the working effect identical with the second embodiment, and can have the base portion 1a of the 1b rear surface, grid portion be provided in relative to outside, makes grid portion 1b towards the light source of such as BLU.
By being rotated counterclockwise drum cooler 5, the direction of transfer of transmission matrix component 1 is put upside down, or by the position left/right of highly reflective material sedimentary origin 15, antiradar reflectivity material deposition source 16, deposition shield 12 and cover plate 14 being put upside down, polarized light splitting device 40 can manufacture by manufacturing equipment 110 as shown in Figure 9.
Hereinafter, together with comparing 1 and 2, the particular instance 1-4 of the wire-grid polarizer formed according to above-mentioned example embodiment will be described.
Example 1
Use thickness be polyethylene terephthalate (PET) film of 100 μm as transmission matrix component 1, and WGP as manufactured above in conjunction with described by the first example embodiment.
First, strip grate portion 1b is formed on transmission matrix component 1 with the grid pitch P of 150nm, the width W of 75nm, the height of 150nm.This shape of grid portion 1b is also general for following instance 2 to 4.
Use aluminium as deposition materials 11, it sprays from the sedimentary origin 9 for depositing.With reference to figure 5 and Fig. 6, angle of deposit θ 1, θ 2, θ 3 and θ 4 are set to-60 ° ,-30 ° ,-60 ° and-90 ° respectively.In the last stage of deposition process, first form high reflectance part 2a, and form center section 2c, its composition gradually changes to antiradar reflectivity part 2b from high reflectance part 2a according to the change of angle of deposit.At the after-stage of deposition process, form antiradar reflectivity part 2b.The height of non-transmissive layer 2 is 150nm.As a result, the WGP of all polarized light splitting devices 10 as shown in Figure 2 has been manufactured.
When this WGP is used for the lower polarization film of the LCD device of LCD TV, recording bright room (300Lx) contrast is 1000: 1.
Example 2
Use thickness be polycarbonate (PC) film of 100 μm as transmission matrix component 1, and WGP as manufactured above in conjunction with described by the second example embodiment.Grid pitch P, the width W of grid portion 1b are identical with example 1 with height.
Use aluminium as deposition materials 11, it sprays from sedimentary origin 9.With reference to figure 5 and Fig. 6, angle of deposit θ 1, θ 2, θ 3 and θ 4 are set to 90 °, 60 °, 30 ° and 60 ° respectively.In the last stage of deposition process, first form antiradar reflectivity part 2b ', and form center section 2c ' subsequently, its composition gradually changes to high reflectance part 2a ' from antiradar reflectivity part 2b ' according to the change of angle of deposit.At the after-stage of deposition process, form high reflectance part 2a '.The height of non-transmissive layer 2 ' is 150nm.As a result, the WGP of all polarized light splitting devices 20 as shown in Figure 8 has been manufactured.
When the lower polarization film of the WGP that this up/down is put upside down for the LCD device of LCD TV, recording bright room (300Lx) contrast is 1000: 1.
Example 3
Use thickness be the PET film of 100 μm as transmission matrix component 1, and WGP as manufactured above in conjunction with described by the 3rd example embodiment.Grid pitch P, the width W of grid portion 1b are identical with example 1 with height.
Use aluminium as the deposition materials 17 sprayed from highly reflective material sedimentary origin 15, and use carbon as the deposition materials 18 sprayed from antiradar reflectivity material deposition source 16.Angle of deposit θ 1, θ 2, θ 3 and θ 4 are set to-60 ° ,-30 °, 60 ° and 90 ° respectively.In the last stage of deposition process, first form high reflectance part 2A made of aluminum, and form center section 2C subsequently, wherein, aluminium and carbon mixing, and the ingredients of a mixture ratio gradually changes from high reflectance part 2A to antiradar reflectivity part 2B.At the after-stage of deposition process, form the antiradar reflectivity part 2B be made up of carbon.Non-transmissive layer 2 " height be 150nm.As a result, the WGP of all polarized light splitting devices 30 as shown in Figure 2 has been manufactured.
When this WGP is used for the lower polarization film of the LCD device of LCD TV, recording bright room (300Lx) contrast is 1000: 1.
Example 4
Use thickness be the PC film of 100 μm as transmission matrix component 1, and WGP is manufactured by the polarized light splitting device manufacture method of exemplary modified according to a second embodiment of the present invention.Grid pitch P, the width W of grid portion 1b are identical with example 1 with height.
In the manufacturing equipment shown in Fig. 9, the position of highly reflective material sedimentary origin 15 and antiradar reflectivity material deposition source 16 is exchanged, make antiradar reflectivity material 18 from antiradar reflectivity sedimentary origin 16 deposit after, highly reflective material 17 deposits from high reflectance sedimentary origin 15.Angle of deposit θ 1, θ 2, θ 3 and θ 4 are set to-60 ° ,-30 °, 60 ° and 90 ° respectively.Use aluminium as the deposition materials sprayed from highly reflective material sedimentary origin 15, and use carbon as the deposition materials sprayed from antiradar reflectivity sedimentary origin 16.In the last stage of deposition process, first form the antiradar reflectivity part 2B ' be made up of carbon, and form center section 2c ' subsequently, wherein, aluminium and carbon mixing, and component ratio gradually changes from antiradar reflectivity part 2B ' to high reflectance part 2A '.At the after-stage of deposition process, form high reflectance part 2A ' made of aluminum.Non-transmissive layer 2 " ' height be 150nm.As a result, the WGP of all polarized light splitting devices 40 as shown in Figure 8 has been manufactured.
When the lower polarization film of the WGP that this up/down is put upside down for the LCD device of LCD TV, recording bright room (300Lx) contrast is 1000: 1.
Compare 1
With reference to figure 10a, use thickness be the PET film 50 of 100 μm as Transmission light substrate, and the WGP shown in Figure 10 a manufactures according to following process.
1. the aluminium of each 100nm of having thickness and Carbon deposition are overlapped on the surface of PET film 50.
2. resist is coated on sedimentary deposit, and by the line in chemical etching formation resist and interval.
3. use resist to etch aluminium lamination and carbon-coating as mask.
4. peel off the resist remained on sedimentary deposit.
The WGP manufactured by above process has the grid pitch P of 150nm and the grid width W of 75nm.The overall height of grid is 200nm, and the thickness of aluminium lamination 51 is 100nm, and the thickness of carbon-coating 52 is 100nm.
When this WGP is used for the lower polarization film of the LCD device of LCD TV, recording bright room (300Lx) contrast is 1000: 1.
Compare 2
With reference to figure 10b, use thickness be the PET film 50 of 100 μm as Transmission light substrate, and the WGP shown in Figure 10 b manufactures according to following process:
1. will there is the aluminium layer deposition of 150nm thickness on the surface of PET film 50.
2. resist is coated on the aluminium lamination of deposition, and by the line in chemical etching formation resist and interval.
3. use resist to etch aluminium lamination as mask.
4. peel off the resist remained on sedimentary deposit.
The grid of the aluminium lamination 53 of the WGP manufactured by above process have the grid height of the grid pitch P of 150nm, grid width W and 150nm of 75nm.
When this WGP is used for the lower polarization film of the LCD device of LCD TV, recording bright room (300Lx) contrast is 500: 1.
Summarize example 1 to 4 above in table 2 below and compare the assessment result of 1 and 2.
Table 2
Contrast Grid height Grid intensity Manufacture process
Example 1 1000∶1 150nm Generally Easily
Example 2 1000∶1 150nm Generally Easily
Example 3 1000∶1 150nm Generally Easily
Example 4 1000∶1 150nm Generally Easily
Compare 1 1000∶1 200nm Weak Difficult
Compare 2 500∶1 150nm Generally Generally
When compared with comparing 1, the WGP of example 1 to 4 can more easily manufacture, and presents the contrast properties identical with comparing 1 simultaneously.And, can the height of sedimentary deposit be remained low, and by forming intervening fade part between high reflectance part and antiradar reflectivity part, the intensity of grid be remained common.And when compared with comparing 2, the WGP of example 1 to 4 can more easily manufacture, and presents higher contrast simultaneously.Like this, can be used as the reflective polarizing beam splitter with high contrast effect and performance according to the polarized light splitting device of all embodiments of the present invention.
As mentioned above, polarized light splitting device, the display comprising this device, the method manufacturing this device and the equipment manufacturing this device can provide a kind of such device, wherein, by changing the composition of deposition materials and/or structure forms sedimentary deposit in grid portion, the reflectivity of light incident side is made to be high relative to incident light and reflectivity becomes relatively low in the transmission direction of incident light.Therefore, polarized light splitting device can present high contrast effect and the intensity of sedimentary deposit can be strengthened, even manufacture large scale polarized light splitting device also improve manufacture efficiency and reliability simultaneously.
Here, disclosed one exemplary embodiment of the present invention, although have employed particular term, they only use and set forth in the general meaning with describing, and not object is restriction.Such as, when embodiment describe the first component move relative to second component, should be appreciated that this motion is relative, and second component can move relative to the first component, or two components are all removable.
In above-mentioned example embodiment, explain may correspond to and form two holes in single sedimentary origin and two stages of deposition subprocess can be performed by single sedimentary origin.Angle of deposit can be changed by angle of deposit determination component and sedimentary deposit can have the reflectivity gradually changed.But should be appreciated that, the number corresponding to the hole of single sedimentary origin is not limited to two.Such as, according to required reflectivity value, Kong Keyu sedimentary origin pairing, can provide multipair hole and sedimentary origin etc.
Polarization film manufacturing equipment as above is by the rear surface in propping bar portion, transmit Transmission light substrate continuously in a second direction, wherein the grid portion of this Transmission light substrate has the little relief pattern extended on the first direction vertical with second direction, and sedimentary deposit can be deposited on by the Transmission light substrate that transmits.This manufacturing equipment can comprise: at least one sedimentary origin, and it can be oppositely arranged with Transmission light substrate; And angle of deposit determination component, it can be arranged between sedimentary origin and matrix component, and it can have the one or more holes for each sedimentary origin along matrix component direction of transfer.Use this manufacturing equipment, by the ground or change the angle of deposit of the normal direction relative to matrix component from relatively large value to relatively small value from relatively small value to relatively large value of the direction of transfer along matrix component, perform deposition process.Therefore, the sedimentary deposit that reflectivity gradually changes according to the change of angle of deposit can be formed.The optimum range of angle of deposit can be determined according to the relation between reflectivity as above and grid shape.
And, in the above description, explain polarized light splitting device manufacturing equipment and can comprise one or two sedimentary origin.But should be appreciated that, this manufacturing equipment can have three or more sedimentary origins, it can be used for the polarized light splitting device that manufacture reflectivity gradually changes in multilayer.
And, in the above description, explain and such as use cover plate, medium pore can be divided into upstream side opening and downstream side opening 12B, first and second deposition materials are mixed with desired ratio by medium pore, but, should be appreciated that, the structure of this manufacturing equipment can be changed into cover plate is omitted and medium pore publicly for high reverse--bias material deposition source and low reflecting material sedimentary origin.
And in the above description, explaining transmission matrix component 1 can be transmitted along the outside surface of drum cooler 5.But should be appreciated that, transfer path is not limited to circumferential shapes.Transfer path can be formed with non-circular, curve shape, rectilinear form, dashed line shape etc., and deposition shield and sedimentary origin can be placed on transfer path.
And in the above description, the angle of deposit explained in deposition materials spray regime can change according to the movement of transmission matrix component.But should be appreciated that, angle of deposit is by moving deposition shield or sedimentary origin or being changed by the injection direction etc. changing deposition materials relative to transmission matrix component.
Therefore, when it should be appreciated by those skilled in the art that the spirit and scope of the present invention set forth in the claim below not deviating from, the various changes of form and details can be carried out, comprise and the various aspects of above-mentioned example embodiment are combined.

Claims (3)

1., for the manufacture of a method for polarized light splitting device, comprising:
Be provided in the transmission matrix component of pattern base portion with ridge; And
Described ridge forms non-transmissive layer, and wherein, described non-transmissive layer comprises:
Photo-emission part divides, and
Light absorption part, and
Center section between described photo-emission part divides and described light absorption department divides,
Described photo-emission part divides and has identical material composition with described light absorption part, and
Wherein, form described non-transmissive layer and comprise by depositing described non-transmissive layer according to described non-transmissive layer Level Change angle of deposit,
Wherein said non-transmissive layer presents the gradual change of reflectivity, and the gradual change of described reflectivity has the densifie state of reflection and the rarefaction of absorption,
Wherein,
Form described non-transmissive layer to comprise and apply described material composition from the angle different relative at least two of described base portion,
The first angle in described at least two angles corresponds to described photo-emission part and divides, and
The second angle in described at least two angles corresponds to described light absorption part; And
Form described non-transmissive layer to comprise and apply described material composition from least two different angular ranges,
The first scope in described at least two scopes corresponds to described photo-emission part and divides, and
The second scope in described at least two scopes corresponds to described light absorption part; And
The angle of deposit θ H formed in the deposition subprocess that described photo-emission part divides have θ 2≤| the scope of θ H|≤θ 1, wherein θ 2 < θ 1, described angle of deposit θ H is the angle of the normal direction relative to deposition surface,
The angle of deposit θ L formed in the deposition subprocess of described light absorption part have θ 3≤| the scope of θ L|≤θ 4, wherein θ 3 < θ 4, described angle of deposit θ L is the angle of the normal direction relative to deposition surface, and
θ 1, θ 2, θ 3 and θ 4 meets condition below:
40°≤θ1≤70°,
20°≤θ2≤50°,
60 °≤θ 3 < 90 ° and
60°≤θ4<90°。
2. method according to claim 1, wherein, described method comprises:
Described transmission matrix component is striden across the first hole along the first direction approximately perpendicular to the bearing of trend of described ridge, and by described first hole, deposition of material is divided to form described photo-emission part on described ridge; And
Described transmission matrix component is striden across the second hole along described first direction, and divides to form described light absorption part by deposition of material at described photo-emission part by described second hole.
3. method according to claim 1, wherein, described method comprises:
Described transmission matrix component is striden across the first hole along the first direction approximately perpendicular to the bearing of trend of described ridge, and by described first hole by deposition of material on described ridge to form described light absorption part; And
Described transmission matrix component is striden across the second hole along described first direction, and by described second hole, deposition of material is divided to form described photo-emission part in described light absorption part.
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US10054717B2 (en) * 2015-04-03 2018-08-21 Moxtek, Inc. Oxidation and moisture barrier layers for wire grid polarizer
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Citations (4)

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Publication number Priority date Publication date Assignee Title
US6122103A (en) * 1999-06-22 2000-09-19 Moxtech Broadband wire grid polarizer for the visible spectrum
US6288840B1 (en) * 1999-06-22 2001-09-11 Moxtek Imbedded wire grid polarizer for the visible spectrum
CN1576907A (en) * 2003-06-25 2005-02-09 夏普株式会社 Polarizing optical element and display device including the same
CN1952700A (en) * 2005-10-17 2007-04-25 旭化成株式会社 Wire grid polarizer and manufacturing method of the same

Patent Citations (4)

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Publication number Priority date Publication date Assignee Title
US6122103A (en) * 1999-06-22 2000-09-19 Moxtech Broadband wire grid polarizer for the visible spectrum
US6288840B1 (en) * 1999-06-22 2001-09-11 Moxtek Imbedded wire grid polarizer for the visible spectrum
CN1576907A (en) * 2003-06-25 2005-02-09 夏普株式会社 Polarizing optical element and display device including the same
CN1952700A (en) * 2005-10-17 2007-04-25 旭化成株式会社 Wire grid polarizer and manufacturing method of the same

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