CN101261444B - Manufacture method for display panel possessing different substrate thickness difference - Google Patents
Manufacture method for display panel possessing different substrate thickness difference Download PDFInfo
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- CN101261444B CN101261444B CN2008100935259A CN200810093525A CN101261444B CN 101261444 B CN101261444 B CN 101261444B CN 2008100935259 A CN2008100935259 A CN 2008100935259A CN 200810093525 A CN200810093525 A CN 200810093525A CN 101261444 B CN101261444 B CN 101261444B
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Abstract
The invention provides a manufacturing method of a display panel with a thickness difference of different substrates, which is used for adjusting the thicknesses of an upper substrate and a lower substrate of the display panel, thus further producing the display panel with different thicknesses. The manufacturing method of a display panel comprises the following steps of assembling a first substrate and a second substrate, and arranging an anti-etching layer on the outer surface of the first substrate and carrying out the first etching. As the surface of the first substrate is provided with the anti-etching layer, the first substrate can avoid or delay the etching. The second substrate is etched simultaneously, and the thickness of the substrate is reduced, thus changing the thickness difference of the first substrate and the second substrate.
Description
Technical field
The present invention is relevant for a kind of display panel manufacture method; Particularly, the present invention is relevant for a kind of display panel manufacture method with different substrate thickness difference.
Background technology
Along with the lifting of thin display demand, the technological development of display panel slimming is becoming more and more important in recent years.The technology of display panel slimming includes with the Ginding process of physics mode and engraving method with chemical mode.For method for chemially etching, its technology maturity also reaches its maturity.With the organic LED display panel is example, and the thickness of display panel and relative thickness difference thereof are estimated one of overall quality often and considered greatly.Therefore at present in this field, how effectively and flexibly adjust the thickness and the relative thickness difference thereof of display panel, become the target that engineers is is actively researched and developed.
At present, with method for chemially etching, two outside surfaces of display panel are to carry out chemical etching simultaneously, so the thickness difference of first substrate of display panel and second substrate is to adjust at chemical etching step, must adjust substrate thickness difference by the physical grinding method.Not only can increase cost and also increase uncertainty yet add the physics Ginding process, even the physical grinding method often causes the substrate scratch for the planning of manufacturing process in the display panel manufacture process.Therefore, the display panel that how produces substrate thickness difference by method for chemially etching promptly becomes the direction of present research and development.
Summary of the invention
The object of the present invention is to provide a kind of display panel manufacture method, can flexibly produce the display panel of different substrate thickness difference.
Display panel manufacture method step of the present invention comprises: upright first substrate of group and second substrate; The outside surface of resistant layer in first substrate is set; And carry out first etching in the resistant layer of first substrate and the outside surface of second substrate.
Aforesaid display panel manufacture method, the method for wherein adhering to this resistant layer comprise be selected from vapour deposition process, attaching method, rubbing method, spraying one of them.
Aforesaid display panel manufacture method, wherein the material of this resistant layer be selected from content of wax material and nitrogen silicon compound one of them.
Aforesaid display panel manufacture method, the original depth that wherein has between this first substrate and this second substrate more than zero is poor, and have first thickness difference making after this first etching between this first substrate and this second substrate, it is poor that wherein this first thickness difference is different from this original depth.
Aforesaid display panel manufacture method, wherein this resistant layer be provided with step comprise determine this resistant layer thickness to change the difference of this first thickness difference and this original depth difference.
Aforesaid display panel manufacture method, wherein relative this first substrate of this etch-resistant layer and this second substrate have etch-rate ratio, this resistant layer be provided with step comprise determine this resistant layer material to adjust this etch-rate, to change the difference of this first thickness difference and this original depth difference.
Aforesaid display panel manufacture method, wherein this etch-rate scope is between 0.5 μ m/min to 20 μ m/min.
Aforesaid display panel manufacture method, wherein this resistant layer is provided with step and comprises: chemical or physical property adhering mode are attached to removable rete at least one outside surface of this first substrate and this second substrate; And form this resistant layer on this removable rete; Wherein, after this first etching, remove this removable rete.
Aforesaid display panel manufacture method, wherein this removable rete attachment steps comprises at least one outside surface that will this removable rete be attached to this first substrate and this second substrate in the electrostatic force mode.
Aforesaid display panel manufacture method further is included in this resistant layer and is provided with that the outside surface at this first substrate and this second substrate carries out initial etch before the step.
Aforesaid display panel manufacture method is included in further that the outside surface at this first substrate and this second substrate carries out second etching behind this first etching step.
Aforesaid display panel manufacture method, wherein this initial etch, this first etching and this second etching comprise with fluoride and carry out chemical etching.
Aforesaid display panel manufacture method, wherein the upright step of this group further comprises the side gap of this first substrate of sealing and this second substrate.
The present invention also provides a kind of display panel manufacture method, comprises the following step: upright first substrate of group and second substrate, and the original depth that wherein has between this first substrate and this second substrate more than zero is poor; The outside surface of resistant layer in this first substrate is set; Carry out first etch phase to having this first substrate that this resistant layer is set and the outside surface of this second substrate; Make between this first substrate and this second substrate to have first substrate thickness difference, it is poor that wherein this first thickness difference is different from this original depth; And carry out second etch phase at the outside surface of this first substrate and this second substrate.
Aforesaid display panel manufacture method, wherein this resistant layer be provided with step comprise determine this resistant layer thickness to change the difference of this first thickness difference and this original depth difference.
Aforesaid display panel manufacture method, wherein relative this first substrate of this etch-resistant layer and this second substrate have etch-rate ratio, this resistant layer be provided with step comprise determine this resistant layer material to adjust this etch-rate, to change the difference of this first thickness difference and this original depth difference.
Aforesaid display panel manufacture method, wherein this first etch phase step and this second etch phase step comprise with fluoride and carry out chemical etching.
Aforesaid display panel manufacture method, wherein this resistant layer is provided with step and comprises: chemical or physical property adhering mode are attached to removable rete at least one outside surface of this first substrate and this second substrate; Form this resistant layer on this removable rete; And, after this first etch phase, remove this removable rete.
Aforesaid display panel manufacture method, wherein this second etch phase is an initial etch, and the outside surface in this first substrate and this second substrate carries out this initial etch before this resistant layer is provided with step.
Aforesaid display panel manufacture method, wherein the upright step of this group further comprises the side gap of this first substrate of sealing and this second substrate.
The present invention can adjust the thickness of display panel upper and lower base plate, to produce the display panel of different-thickness.
Description of drawings
Fig. 1 is a display panel manufacture method embodiment process flow diagram of the present invention;
Fig. 2 a is the embodiment synoptic diagram of the upright step of substrate in batch of the present invention;
Fig. 2 b is the embodiment synoptic diagram that resistant layer of the present invention is provided with step;
Fig. 2 c is the embodiment synoptic diagram of first etching step of the present invention;
Fig. 3 is a display panel manufacture method embodiment process flow diagram of the present invention;
Fig. 4 a is the embodiment synoptic diagram that resistant layer of the present invention is provided with step;
Fig. 4 b is another embodiment synoptic diagram that resistant layer of the present invention is provided with step;
Fig. 4 c is the embodiment synoptic diagram of first etching step of the present invention;
Fig. 4 d is another embodiment synoptic diagram of first etching step of the present invention;
Fig. 5 is a display panel manufacture method embodiment process flow diagram of the present invention;
Fig. 6 a is the embodiment synoptic diagram of initial etch step of the present invention;
Fig. 6 b is the embodiment synoptic diagram that resistant layer of the present invention is provided with step;
Fig. 6 c is another embodiment synoptic diagram that resistant layer of the present invention is provided with step;
Fig. 6 d is the embodiment synoptic diagram of first etching step of the present invention;
Fig. 6 e is another embodiment synoptic diagram of first etching step of the present invention;
Fig. 7 is a display panel manufacture method embodiment process flow diagram of the present invention;
Fig. 8 is the embodiment synoptic diagram of second etching step of the present invention.
Wherein, description of reference numerals is as follows:
100 first substrates
200 second substrates
300 resistant layer
310 removable retes
410 drive the electrofiltration element layer
420 filter layers
500 frame glue
Embodiment
The invention provides a kind of display panel manufacture method, and use this manufacture method and make display panel with different-thickness difference.In a preferred embodiment, display panel of the present invention is display panels (LCD).Yet in different embodiment, display panel of the present invention also can comprise organic LED display panel.In addition, in different embodiment, display panel of the present invention also can comprise macromolecule Organic Light Emitting Diode (PLED) display panel.Display panel of the present invention can be applicable to the display screen etc. of flat-plate type monitor, mobile phone and digital camera of flat-surface television, personal computer and the notebook computer of various kind of panel display screen, family expenses.
Be illustrated in figure 1 as the embodiment process flow diagram of display panel manufacture method of the present invention.Step 4001 comprises upright first substrate of group and second substrate.Step 4003 comprises the outside surface of resistant layer in first substrate is set.Step 4005 is included in the resistant layer of first substrate and the outside surface of second substrate carries out first etching.Below by a plurality of different embodiments each step is described.
Among the embodiment shown in Fig. 2 a, display panel mainly comprises first substrate 100, second substrate 200, components of drive circuit layer 410 and filter layer 420.In this embodiment, components of drive circuit layer 410 is arranged at second substrate, 200 inside surface filter layers 420 and then is arranged at first substrate, 100 inside surfaces; The material of first substrate 100 and second substrate 200 is preferably glass; Yet in other embodiments, substrate material can be polyethylene terephthalate (Polyethylene terephthalate, PET), polymethylmethacrylate (poly-methyl methacrylate, PMMA), polycarbonate (poly-carbonate, PC), polystyrene (poly-styrene, PS), mixture or other light transmissive material of above material.In addition, first substrate 100 is preferred adopts the material identical with second substrate 200; Yet in different embodiment, first substrate 100 also can use different materials respectively with second substrate 200.
Among the embodiment shown in Fig. 2 a, filter layer 420 comprises colored filter.410 on components of drive circuit layer comprise thin film transistor (TFT) (Thin-Film-Transistor, TFT); Yet in different embodiment, components of drive circuit layer 410 also can be other circuit pattern with similar functions, for example MIM-TFD circuit.And the mode that forms thin film transistor (TFT) preferably comprises amorphous silicon manufacturing process (amorphous silicon; A-Si), low temperature polycrystalline silicon manufacturing process (Low Temperature poly-silicon; LTPS) and other manufacturing process of similar effect can be provided.
Then please consult Fig. 1 and Fig. 2 a～Fig. 2 c simultaneously, Fig. 1 is a display panel manufacture method embodiment process flow diagram of the present invention, Fig. 2 a is the embodiment synoptic diagram of the upright step of substrate in batch of the present invention, Fig. 2 b is the embodiment synoptic diagram that resistant layer of the present invention is provided with step, and Fig. 2 c is the embodiment synoptic diagram of first etching step of the present invention.The upright step 4001 of group of upright first substrate 100 of group and second substrate 200 comprises the side gap of sealing first substrate 100 and second substrate 200, wherein preferably with frame glue 500, in the present invention, preferably use the side seals of UV glue with first substrate 100 and second substrate 200; Yet in different embodiment, can also organize upright first substrate 100 and second substrate 200 by other different modes.In this embodiment, first substrate 100 and 200 of second substrates have original depth more than zero poor (| D2-D1| 〉=0, D1 is the thickness of first substrate 100; D2 is the thickness of second substrate 200); In other words, first substrate 100 can have identical original depth or different original depth with second substrate 200.
Embodiment shown in Fig. 2 b, resistant layer 300 is arranged at the outside surface of first substrate 100.Resistant layer 300 is preferably formed by the material that contains cured material, nitrogen silicon compound or other tool resistance to fouling.Resistant layer 300 can be complete anti-etching material or the anti-etching material of part; That is resistant layer 300 is not corroded by medicament can fully or suffer erosion with interior speed or consume with default speed.In addition, resistant layer 300 preferably is arranged at resistant layer 300 with vapour deposition process, attaching method, rubbing method, spraying or other mode with similar effect the outside surface of first substrate 100.Shown in Fig. 2 b, when the inside surface of first substrate 100 was provided with filter layer 420, first substrate 100 promptly used as the filter layer substrate.This moment, the outside surface of filter layer substrate was provided with resistant layer 300; Therefore the outside surface as first substrate 100 of filter layer substrate can protectedly not be subjected to etching.Yet in different embodiment, also resistant layer 300 can be arranged on second substrate 200, this moment, resistant layer 300 was attached on the outside surface of components of drive circuit laminar substrate.In addition, look the design and manufacture technology needs, resistant layer 300 can also be arranged at the substrate beyond filter layer substrate and the filter layer substrate simultaneously.
Then in first etching step 4005, first substrate 100 and second substrate 200 that resistant layer 300 is set carried out first etching.The chemical material that etching is used preferably comprises various fluoride, for example hydrogen fluoride or ammonium fluoride etc.Because first substrate, 100 surfaces are provided with resistant layer 300, therefore can avoid or postpone first substrate 100 is subjected to etching, and second substrate 200 then is subjected to etching at the same time and substrate thickness is reduced.Among first embodiment shown in Fig. 2 c, after carrying out etching step 4005, in this embodiment, to such an extent as to first substrate 100 that resistant layer 300 can suffer erosion and consume its protection finally also can suffer erosion, and make the thickness D1 of first substrate 100 become d1; Second substrate also becomes d2 because of first etching makes its thickness by D2 simultaneously.Therefore the thickness difference of 200 of first substrate 100 and second substrates is changed into first thickness difference (| d2-d1| 〉=0) by original depth poor (| D2-D1| 〉=0).First thickness difference can be zero or other numerical value, but need with the original depth difference different (| d2-d1| ≠ | D2-D1|).Yet in different embodiment, resistant layer 300 also can not weather or to suffer erosion than slow rate, be D1 to protect first substrate 100 not weather and keep its thickness fully.
When with the nitrogen silicon compound during as the material of resistant layer 300, nitrogen silicon compound itself also can suffer erosion in the etching manufacturing process, and reduces its thickness gradually.Be the difference of control original depth difference and first thickness difference this moment, resistant layer be provided with can further comprise in the step 4003 thickness that determines resistant layer 300 with the difference that changes first thickness difference and original depth difference (|| d2-d1|-|D2-D1||).When resistant layer 300 materials were identical, the thickness increase of resistant layer 300 can postpone the time that resistant layer 300 is corroded fully; In other words, can postpone the 100 initial etched times of surface of first substrate by the thickness that increases resistant layer 300, to increase the difference of first thickness difference and original depth difference.
For part can etched resistant layer 300, resistant layer 300 had etch-rate ratio with respect to first substrate 100 and second substrate 200; With preferred embodiment, etch-rate ratio can be the ratio that hydrogen fluoride etch has resistant layer 300 speed and hydrogen fluoride etch glass speed.When carrying out first etching with fluoride, the first etched etching glass speed range is preferably between 0.5 μ m/min to 20 μ m/min.For adjusting the difference of first thickness difference and original depth difference, resistant layer is provided with step 4003 also can pass through the material of decision resistant layer 300 to adjust etch-rate, to change resistant layer 300 full consumptions and the initial etched time point of first substrate.For example when the material of resistant layer 300 is preferably the nitrogen silicon compound, the nitrogen silicon compound can be adjusted to one of six percentages between 1/2nd with respect to hydrofluoric etch-rate.Embodiment shown in Fig. 2 c, first substrates 100 and second substrate, 200 generations, first thickness difference behind first etching step 4005 (| d2-d1|＞0), this moment, resistant layer 300 was also totally etched because of first etching step; Yet resistant layer 300 material differences also can make etching result different, for example use the littler material of etch-rate ratio that first thickness difference is strengthened; Yet in other embodiments, resistant layer 300 also can residually be carried out with the back manufacturing technology steps for the treatment of behind first etching step.
Figure 3 shows that another embodiment process flow diagram of display panel manufacture method of the present invention.In this embodiment, step 4003 further comprises step 4003a, step 4003b and step 4003c.Step 4003a comprises at least one outside surface that removable rete is attached to first substrate and second substrate with chemical or physical property adhering mode.Step 4003b comprises the formation resistant layer on removable rete.Step 4003c removes removable rete after being included in first etching.Step 4003a preferably is attached to removable rete in the electrostatic force mode at least one outside surface of first substrate and second substrate.Each step below is described.
Among second embodiment shown in Fig. 4 a, removable rete 310 is arranged at the outside surface of first substrate 100 (thickness is D1) with the electrostatic force adhering mode; Yet in other different embodiment, removable rete 310 can be arranged at least one outside surface of first substrate 100 and second substrate 200 (thickness is D2) with other chemical or physical property adhering mode.In a preferred embodiment, rete 310 can form by plastic material, for example polycarbonate (Polycarbonate, PC) material.Among second embodiment shown in Fig. 4 b, form resistant layer 300 on removable rete 310, wherein the material of resistant layer 300 be preferably selected from content of wax material and nitrogen silicon compound one of them.When using content of wax material as resistant layer 300; resistant layer 300 can residually make the substrate thickness of the filter layer substrate that is subjected to the resistant layer protection and components of drive circuit laminar substrate constant usually; in other words; having with content of wax material is the substrate of resistant layer, consistent with this original depth through this substrate thickness behind first etching step.
Among the embodiment shown in Fig. 4 c, first substrate 100 and second substrate, 200 generations, first thickness difference behind first etching step (| d2-D1|).Because of the function of resistant layer 300 makes the thickness of first substrate 100 identical with its original thickness, and make first thickness difference be different from original depth poor (| d2-D1| ≠ | D2-D1|); In other words, resistant layer 300 has determined whether etching and produce the effect of aforesaid substrate thickness difference of substrate.At last, shown in Fig. 4 d, after first etching, remove resistant layer 300 and removable rete 310.Because resistant layer 300 is formed on the rete 310, therefore only need on first substrate 100 or second substrate 200, to separate rete 310, can take off remaining resistant layer 300 in the lump.In a preferred embodiment, can be manually or automated manner rete 310 is torn on first substrate 100 or second substrate 200, or rete 310 is taken off with alternate manners such as flushings.
Figure 5 shows that another embodiment process flow diagram of display panel manufacture method of the present invention.Display panel manufacture method of the present invention further comprises step 5001.By step 5001, before resistant layer is provided with step 4003, carry out initial etch at the outside surface of first substrate 100 and second substrate 200.Step 4003 item comprises step 4003a, step 4003b and step 4003c.Step 4003a is attached to removable rete with chemical or physical property adhering mode at least one outside surface of first substrate and second substrate.By step 4003b, form resistant layer on removable rete.By step 4003c, after first etching, remove removable rete.Each step below is described.
Among the 3rd embodiment shown in Fig. 6 a, at first carry out initial etch step 5001, carry out initial etch, both original depth is all reduced (become D1 ' by D1 at first substrate 100 that does not cover resistant layer 300 and the outside surface of second substrate 200; Become D2 ' by D2).In a preferred embodiment, both original depth differences after initial etch still constant (| D2-D1|=|D2 '-D1 ' |); Yet in different embodiment, for example when the material of first substrate 100 and second substrate 200 not simultaneously, the thickness that both reduce in initial etch is understood different.Then shown in Fig. 6 b, in adhering to rete step 4003a, preferably the outside surface of removable rete 310 in first substrate 100 is set with electrostatic means.Shown in Fig. 6 c, then in forming resistant layer step 4003b, resistant layer 300 is set on removable rete 310.Shown in Fig. 6 d, behind first etching step 4005, first substrate 100 and second substrate, 200 generations, first thickness difference (| d2-D1 ' |).Because of the function of resistant layer 300 makes the thickness of first substrate 100 identical with its original thickness, and make first thickness difference be different from original depth poor (| D2-D1|=|D2 '-D1 ' | ≠ | d2-D1 ' |).At last, after first etching, remove among the rete step 4003c, remove resistant layer 300 and removable rete 310, shown in Fig. 6 e.
Figure 7 shows that another embodiment process flow diagram of display panel manufacture method of the present invention.Display panel manufacture method of the present invention further comprises step 5003.By step 5003, carry out second etching at the outside surface of first substrate (thickness D1 becomes d1) and second substrate (thickness D2 becomes d2) in first etching step, 4005 backs.The chemical material that etching is used preferably comprises various fluoride, for example hydrogen fluoride or ammonium fluoride etc.In this embodiment, after removing resistant layer 300 and removable rete 310, the outside surface that starts from first substrate 100 and second substrate 200 carries out second etching step 5003, as shown in Figure 8.In this step, because the outside surface of first substrate 100 and second substrate 200 does not all have the setting of resistant layer 300, therefore all can be subjected to etching and reduce thickness, so first substrate, 100 thickness become d1 ' by d1 and second substrate, 200 thickness become d2 ' by d2.In a preferred embodiment, second thickness difference that this step produced and the difference of first thickness difference are zero (| d2-d1|-|d2 '-d1 ' |=0); In other words, second etching step reduces the thickness of first substrate 100 and second substrate 200 synchronously, does not therefore have the effect that changes the aforesaid substrate thickness difference, but the effect of more flexibly regulating and control the display base plate gross thickness on the manufacturing process can be provided.In different embodiment, for example when the material of first substrate 100 and second substrate 200 not simultaneously, then both thickness of reducing in second etching also can difference.
The present invention is described by above-mentioned related embodiment, yet the foregoing description is only for implementing example of the present invention.It must be noted that disclosed embodiment does not limit the scope of the invention.On the contrary, being contained in the modification of the spirit of claims and scope and equalization is provided with and all is contained in the scope of the present invention.
Claims (19)
1. display panel manufacture method comprises the following step:
Upright first substrate of group and second substrate;
The outside surface of resistant layer in this first substrate is set; And
Carry out first etching in this resistant layer of this first substrate and the outside surface of this second substrate;
Wherein the upright step of this group further comprises the side gap of this first substrate of sealing and this second substrate.
2. display panel manufacture method as claimed in claim 1, the method for wherein adhering to this resistant layer comprise be selected from vapour deposition process, attaching method, rubbing method, spraying one of them.
3. display panel manufacture method as claimed in claim 2, wherein the material of this resistant layer be selected from content of wax material and nitrogen silicon compound one of them.
4. display panel manufacture method as claimed in claim 1, the original depth that wherein has between this first substrate and this second substrate more than zero is poor, and have first thickness difference making after this first etching between this first substrate and this second substrate, it is poor that wherein this first thickness difference is different from this original depth.
5. display panel manufacture method as claimed in claim 4, wherein this resistant layer be provided with step comprise determine this resistant layer thickness to change the difference of this first thickness difference and this original depth difference.
6. display panel manufacture method as claimed in claim 1, wherein relative this first substrate of this etch-resistant layer and this second substrate have etch-rate ratio, this resistant layer be provided with step comprise determine this resistant layer material to adjust this etch-rate, to change the difference of this first thickness difference and this original depth difference.
7. display panel manufacture method as claimed in claim 6, wherein this etch-rate scope is between 0.5 μ m/min to 20 μ m/min.
8. display panel manufacture method as claimed in claim 1, wherein this resistant layer is provided with step and comprises:
Chemical or physical property adhering mode are attached to removable rete the outside surface of this first substrate; And
Form this resistant layer on this removable rete; Wherein, after this first etching, remove this removable rete.
9. display panel manufacture method as claimed in claim 8, wherein this removable rete attachment steps comprises the outside surface that will this removable rete be attached to this first substrate in the electrostatic force mode.
10. display panel manufacture method as claimed in claim 1 further is included in this resistant layer and is provided with that the outside surface at this first substrate and this second substrate carries out initial etch before the step.
11. display panel manufacture method as claimed in claim 10, wherein this initial etch and this first etching comprise with fluoride and carry out chemical etching.
12. display panel manufacture method as claimed in claim 1 is included in further that the outside surface at this first substrate and this second substrate carries out second etching behind this first etching step.
13. display panel manufacture method as claimed in claim 12, wherein this first etching and this second etching comprise with fluoride and carry out chemical etching.
14. a display panel manufacture method comprises the following step:
Upright first substrate of group and second substrate, the original depth that wherein has between this first substrate and this second substrate more than zero is poor;
The outside surface of resistant layer in this first substrate is set;
Carry out first etch phase to having this first substrate that this resistant layer is set and the outside surface of this second substrate; Make between this first substrate and this second substrate to have first substrate thickness difference, it is poor that wherein this first thickness difference is different from this original depth; And
Outside surface at this first substrate and this second substrate carries out second etch phase;
Wherein the upright step of this group further comprises the side gap of this first substrate of sealing and this second substrate.
15. display panel manufacture method as claimed in claim 14, wherein this resistant layer be provided with step comprise determine this resistant layer thickness to change the difference of this first thickness difference and this original depth difference.
16. display panel manufacture method as claimed in claim 14, wherein relative this first substrate of this etch-resistant layer and this second substrate have etch-rate ratio, this resistant layer be provided with step comprise determine this resistant layer material to adjust this etch-rate, to change the difference of this first thickness difference and this original depth difference.
17. display panel manufacture method as claimed in claim 14, wherein this first etch phase step and this second etch phase step comprise with fluoride and carry out chemical etching.
18. display panel manufacture method as claimed in claim 14, wherein this resistant layer is provided with step and comprises:
Chemical or physical property adhering mode are attached to removable rete the outside surface of this first substrate;
Form this resistant layer on this removable rete; And,
After this first etch phase, remove this removable rete.
19. display panel manufacture method as claimed in claim 14, wherein this second etch phase is an initial etch, and the outside surface in this first substrate and this second substrate carries out this initial etch before this resistant layer is provided with step.
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6197209B1 (en) * | 1995-10-27 | 2001-03-06 | Lg. Philips Lcd Co., Ltd. | Method of fabricating a substrate |
| CN2593365Y (en) * | 2002-12-31 | 2003-12-17 | 威盛电子股份有限公司 | High density multi-chip module |
| JP2005134693A (en) * | 2003-10-31 | 2005-05-26 | Optrex Corp | Liquid crystal display device |
| CN1767167A (en) * | 2004-10-14 | 2006-05-03 | 台湾积体电路制造股份有限公司 | Method for forming STI structures with controlled step height |
| CN101089688A (en) * | 2006-06-14 | 2007-12-19 | 比亚迪股份有限公司 | Manufacturing method of superthin liquid crystal box |
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2008
- 2008-04-23 CN CN2008100935259A patent/CN101261444B/en not_active Expired - Fee Related
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6197209B1 (en) * | 1995-10-27 | 2001-03-06 | Lg. Philips Lcd Co., Ltd. | Method of fabricating a substrate |
| CN2593365Y (en) * | 2002-12-31 | 2003-12-17 | 威盛电子股份有限公司 | High density multi-chip module |
| JP2005134693A (en) * | 2003-10-31 | 2005-05-26 | Optrex Corp | Liquid crystal display device |
| CN1767167A (en) * | 2004-10-14 | 2006-05-03 | 台湾积体电路制造股份有限公司 | Method for forming STI structures with controlled step height |
| CN101089688A (en) * | 2006-06-14 | 2007-12-19 | 比亚迪股份有限公司 | Manufacturing method of superthin liquid crystal box |
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