CN101203858B - 用于传送射频功率的方法和系统、等离子处理系统 - Google Patents

用于传送射频功率的方法和系统、等离子处理系统 Download PDF

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CN101203858B
CN101203858B CN200680022298XA CN200680022298A CN101203858B CN 101203858 B CN101203858 B CN 101203858B CN 200680022298X A CN200680022298X A CN 200680022298XA CN 200680022298 A CN200680022298 A CN 200680022298A CN 101203858 B CN101203858 B CN 101203858B
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G·J·范齐尔
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Abstract

射频功率传送系统包括RF功率发生器、电弧检测电路以及响应于电弧检测电路的控制逻辑电路。针对一个参数的测量值，计算动态边界，其中该参数表示或与从功率发生器传送至负载的功率相关。随后测量的该参数的值超过该参数的计算的动态边界，则指示检测到电弧。在检测到电弧后，中断或调整功率发生器的功率传送，或者采取其他的措施，直到电弧熄灭。通过采用电弧检测边界的动态计算，本发明允许在RF功率传送系统中处理电弧，而不管该系统是否已经达到稳定的功率传送状况。

Description

用于传送射频功率的方法和系统、等离子处理系统
技术领域
本发明一般涉及射频功率传送，更特别地涉及在射频供电的等离子体工艺中检测和避免电弧。
背景技术
在半导体、平板显示器、数据存储设备的制造以及其他的工业应用中，普遍地使用射频(RF)供电的等离子体工艺。尽管RF电源典型地可以很好地防止负载阻抗的突变，但是通常没有将它们设计成检测和响应于由工艺腔内的电弧引起的等离子体阻抗的变化。结果，RF电源可能继续向在等离子体工艺内形成的起始电弧馈入能量，这又可能严重损害工件的表面或者甚至损害处理设备本身。
在DC供电的等离子体工艺中，已经对电弧问题进行了长期的研究，尤其是在反应溅射应用中。在反应溅射工艺中，电弧经常源于沉积在溅射目标或腔壁上的介电膜表面上的电荷积累和最终电击穿。通过使用复杂的电弧处理系统已经解决了DC等离子体工艺中的电弧问题，其中这种复杂的电弧处理系统能够检测电弧，并且利用了许多技术，例如暂时中断功率或使输出电压的极性反向来减轻它们的严重程度。在关键的应用中，应该考虑移除输出电压所需要的时间以调整处理时间，以便于控制并限制传送给等离子体的总能量。在DC系统中，很久就已经认识到将DC输出脉动或者以某一重复频率和占空比将输出极性反向可以减小电弧形成的趋势。
RF电源一直被看作是替代技术，其可以用于直接溅射绝缘体，同时完全避免了在DC溅射工艺中的电弧问题。但是，仅仅在最近才认识到在RF工艺中也会偶然出现电弧，对于敏感的膜属性或几何形状来讲，该RF电弧也会带来同样的损害。RF供电系统中的电弧可
能是由半导体晶片或腔表面的聚合体涂层上的栅极图案两端的电荷积累造成的。其他因素包括反应器或腔硬件中的缺陷，保护腔阳极氧化层的老化，工具部件两端的电势差，或者甚至仅仅是施加的RF电源的幅值。在任何情况下，处理和避免电弧要求具有快速检测电弧的发生并且快速中断或移除输出功率的能力，从而减少传送至电弧的能量。
在一种方法中，已经尝试基于确定功率传送参数，例如反射功率的预定阈值来检测和避免RF系统中的电弧。电弧的发生从超过预定阈值的反射功率的突然上升或尖峰推断出来。然而，在系统的功率传送正在调谐时，即在系统的反射功率进入低于预定阈值的稳态值之前，该方法无效。该阈值方法也受限制于RF处理应用中的电弧不总是导致反射功率增加。取决于匹配网络的状态，电弧实际上可能会减少反射功率，并由此不会触发简单的阈值电路中的电弧检测。
RF电弧检测的另一种方法是将功率传送参数的导数，或时间变化率与电弧状况相关联。然而，一些RF电弧可能在1毫秒或更长的时间段中慢慢形成，因此导数检测器可能检测不到。并且，随着频率达到某个点，导数检测器具有越来越大的增益，其中实际的限制约束了带宽。结果，导数检测器变得对更高操作频率的噪声更加敏感。
发明内容
本发明提供了检测和减小RF功率传送应用中的电弧的方法和系统。在本发明的一个方面中，RF功率发生器将功率施加于负载，例如等离子体处理系统中的等离子体。针对一个参数的测量值，计算动态边界，该参数表示或者与从功率发生器向负载传送的功率相关。随后测量的该参数的值超过计算的该参数的动态边界则指示检测到电弧。在检测到电弧后，中断或者调整发生器的功率传送，或者采取其他的措施，直到电弧熄灭。
在本发明的一个实施例中，等离子体处理系统包括RF功率发生器，其将功率通过阻抗匹配网络供应给等离子体负载。在匹配网络正在调谐，以及在充分调谐后，稳态传送功率时，测量发生器和负载之间的反射功率的瞬时值。控制器电路动态计算和评估边界，该边界包括关于测量值的反射功率的上限值和下限值。如果反射功率的随后测量值超过上方边界界限或下方边界界限，则指示出现电弧。控制器电路在很短的时间间隔内中断从发生器到负载的功率，以熄灭电弧。如果反射功率回落到边界界限内，则恢复正常的功率传送。
在本发明的其他实施例中，多个可用的功率传送参数或信号中的任意一个可以单独使用或者组合使用上述功率传送参数或信号，以检测RF供电的等离子体系统中的电弧。除了反射功率外，可以基于下述参数的测量值来计算本发明的动态边界，但不限于此，这些参数包括：负载阻抗；电压，电流和相位；正向功率，传送的功率，VSWR或反射系数；谐波输出的幅值电平的变化；在工艺工件或目标上形成的DC偏置；RF频谱谐波的变化或声波干扰；或者离子饱和电流，电子碰撞率，或等离子体内电子密度的变化。
在本发明的另一实施例中，RF功率传送系统采用了并行的电弧检测电路。使用功率传送参数的慢速滤波后的测量值，并结合一个或多个用以确定检测电路灵敏度的用户选择的常数，来计算动态电弧检测边界。将功率传送参数的快速滤波后的值与计算的检测边界进行比较，以检测电弧状况的出现。这样，在慢速滤波器的截止点和快速滤波器的截止点之间产生平坦的通带。结果，例如与基于导数技术的电弧检测相比，可以在输入频率的范围内保持最优的灵敏度。
通过采用电弧检测边界的动态计算，本发明允许在RF功率传送系统中处理电弧，而不管该系统是否已经达到稳定的功率传送状况。在RF应用中连续监视和处理电弧现象能够获得改善的工艺质量和更高产量的生产能力。
附图说明
图1举例说明了根据本发明一个实施例的等离子体处理系统；
图2举例说明了根据本发明一个实施例的用于RF功率传送应用中的电弧检测和处理的工艺和电路；以及
图3a和3b举例说明了根据本发明一个实施例的RF功率传送应用中的电弧检测和处理。
具体实施方式
图1举例说明了根据本发明一个实施例的等离子体处理系统。处理系统10包括RF功率发生器12，其通过阻抗匹配网络14向等离子体腔18内的等离子体16传送RF功率。在发生器12的输出端，测量正向功率PF和反射功率PR的瞬时值，并将它们传递至控制逻辑电路20，该控制逻辑电路20控制功率发生器12的输出端处的切断电路。
图2举例说明了根据本发明一个实施例的RF功率传送应用中的电弧检测和处理的工艺和电路。正向功率PF和反射功率PR的测量值通过滤波器102、104和106滤波。绝对偏移量O1和O2以及乘数k1和k2是用户选择的输入，其决定了电弧检测电路的灵敏度。慢速滤波后的反射功率的偏移量O1与滤波后的正向功率乘以乘数k1的乘积之和设定了动态边界120的反射功率的上限，而偏移量O2与滤波后的正向功率乘以乘数k2的乘积之和，经反向器108反向后设定了动态边界的反射功率的下限。响应于PF和PR的变化，连续重新计算并动态更新动态边界120的上限和下限。比较器110和112分别比较反射功率PR的快速滤波后的值和动态边界上下限之间的差。响应于比较器110和112产生的比较结果，控制逻辑电路114控制RF功率发生器的切断开关116。
在图2的实施例中，落在动态边界120的上下限外部的反射功率PR的快速滤波后的值指示在该工艺或应用中检测到电弧状况。图3a举例说明了引起反射功率PR超过动态边界202、204的电弧状况206和208的示例。再次参照图2，响应于比较器110或112报告的电弧检测信号，控制逻辑电路114通过打开切断开关116来中断从RF功率发生器的功率传送。将功率传送中断一段足够灭弧的时间，在该时间后，控制逻辑电路114命令切断开关116闭合，以及恢复正常的功率传送。
设定动态边界界限，以使得电弧检测的灵敏度最大化，同时使得出现错误的正检测最小化。在代表性的RF等离子体处理应用中，例如，为了可接受的电弧检测性能，需要在千瓦的范围内，且反射功率的偏移量为50-100瓦，正向功率的乘数为4％的条件下传送RF功率。类似地，基于性能折衷来选择施加于例如正向和反射功率等功率传送参数的测量值的滤波时间常数。这样，例如，即使一些电弧可能花费一毫秒形成，但是由于阻抗匹配网络的调谐作用，它们形成得仍然比提供给发生器的阻抗的期望自然变化要快得多。因此，可以将慢速滤波器设置为具有一或两毫秒的时间常数，且该慢速滤波器仍然跟随等离子体特性的正常变化。典型地基于噪声因素，选择快速滤波器的时间常数，但是其通常比慢速滤波器的时间常数长至少10倍。这样，即使慢速滤波器的时间常数是1ms的数量级，那么通常能够在快速滤波器的时间常数的若干分之几内检测到电弧。
图3a举例说明了本发明的另一个能力，即在调谐或其他非稳态的功率传送状况期间检测并响应于电弧状况。为了在匹配网络还在调谐时，或者在永远不能实现完美调谐的系统，例如具有可变频率RF发生器的固定匹配系统中检测到电弧，本发明的实施例利用了针对被监视的信号的标称值所设定的动态界限。当开始从RF发生器向等离子体负载施加功率时，例如，在负载阻抗和发生器的输出阻抗之间典型地存在阻抗不匹配。因此，反射功率在开始时很高。操作阻抗匹配网络来调谐系统，以通过减少反射功率来改善功率传送，如所示出的减少图3的反射功率曲线200。连续计算动态电弧检测边界的上限202和下限204，并跟踪反射功率的瞬时水平。结果，可以在功率调谐期间检测和处理电弧状况206和208，而无需等待功率传送达到稳态的状况。并且，如果负载状况改变以及系统出现重新调谐，那么电弧检测和处理持续运行。
一旦检测到电弧，对于处理和熄灭电弧有许多选择。例如，可以中断功率传送，或仅仅是减少功率传送。在本发明的一个实施例中，在开始检测到电弧后，中断功率传送50至100μs，这个值能够使典型的处理等离子体返回其正常(即非电弧)状态。如果没有使电弧熄灭，那么进一步触发更长时间的中断，例如第一中断时间段的长度的两倍。该时间的增加一直持续到电弧被熄灭或者预定次数的试图灭弧已经失败，在这种情况下，发生器关闭以保护系统。已经发现：在这种典型的应用中，RF功率传送可能中断10毫秒，且等离子体的阻抗快速地(大约20μs)返回至中断前呈现的值。
在本发明的另一方面中，在电弧检测电路中设置采样和保持部件，以便解决出现持续电弧或“硬”电弧。参照图2，在本发明的一个实施例中，配置控制逻辑电路114以在检测到电弧现象后向慢速滤波器104传送“保持”信号。该“保持”信号使得慢速滤波器104的输出保持在即将出现电弧之前所存在的值。如图3b所示，反射功率的快速滤波后的值与基于慢速滤波器所保持的标称值的电弧检测的恒定上下边界作比较，以便于确定该系统的状况是否已经返回了出现电弧之前的状态。
已经参照用于等离子体处理应用的功率传送系统描述了本发明，其中该功率传送系统以射频(例如13.56MHz)供应千瓦范围内的功率。然而，可以在以任意交流电流频率供应功率的装置、应用或工艺中使用本发明的电弧检测和处理技术。本发明的电弧检测和处理电路可以全部或部分地在功率发生器或匹配网络中实现，或者作为替换，与其他系统部件单独提供和/或工作。虽然本发明用于在功率传送系统的调谐期间，或者在永远不能实现完美调谐的其他情况下，检测和处理电弧，但是本发明不需要存在或使用阻抗匹配网络。
选择功率传送参数，以确保在可接受的误检率内可靠地检测电弧，其中基于该功率传送参数计算动态电弧的检测边界。第二考虑因素包括费用，便于使用，以及分类、计数和报告电弧现象的能力。尽管已经描述了本发明的实施例，其中基于正向和反射功率的测量值计算动态电弧检测边界，但是本发明的其他实施例可以基于其他的功率传送参数来计算动态边界，例如负载阻抗；电压，电流和相位；VSWR或反射系数；谐波输出的幅值电平的变化；RF频谱谐波的变化或声波干扰；或者甚至是电子碰撞率或电子密度的变化。
在本发明的一个实施例中，基于在工艺工件或目标上形成的DC偏置，计算动态电弧检测边界。除了快速和可靠之外，该方法是有利的，这是因为功率传送已经被中断后连续存在的DC偏置会给出一个直接的指示，即电弧还没有熄灭。在没有形成自然DC偏置的情况下，为了检测电弧，使用DC电源来注入DC偏置。一个潜在的复杂情况是偏置检测必须在匹配的腔侧上完成(即，检测会并入在匹配中)，同时必须将电弧检测信号提供给RF发生器。
虽然这里举例说明并描述了特定的结构和操作细节，但是应该理解的是这些描述是示例性的，本领域技术人员在不脱离本发明的精神和保护范围的情况下，可以很容易作出替换的实施例和等价物。相应地，本发明旨在包括所有落入后附权利要求的精神和保护范围内的这样的替换物和等价物。

Claims (34)

1.一种向等离子体负载传送射频功率的方法，包括：
a)提供将射频功率传送至等离子体负载的RF功率发生器；
b)测量与从所述RF功率发生器向所述等离子体负载传送的功率相关的参数的值；
c)针对所述参数的值，计算动态边界，其中所述动态边界是基于所述参数的测量值而动态变化的；
d)测量所述参数的随后的值；以及
e)如果所述参数的所述随后的值超过了所述动态边界，则指示在所述等离子体负载内出现了电弧。
2.如权利要求1所述的方法，其中所述参数是反射功率。
3.如权利要求1所述的方法，其中所述参数是DC偏置。
4.如权利要求1所述的方法，其中基于所述参数的滤波值，计算所述动态边界。
5.如权利要求1所述的方法，其中基于至少两个与从所述RF功率发生器向所述负载传送的所述功率相关的参数的值，计算所述动态边界。
6.如权利要求1所述的方法，其中所述动态边界包括上限和下限。
7.如权利要求1所述的方法，其中基于所述参数的用户定义的偏移量，计算所述动态边界。
8.如权利要求1所述的方法，进一步包括熄灭电弧的步骤。
9.如权利要求8所述的方法，其中所述熄灭电弧的步骤包括中断向所述负载传送功率。
10.如权利要求8所述的方法，其中所述熄灭电弧的步骤包括减少传送至所述负载的功率。
11.如权利要求8所述的方法，其中所述熄灭电弧的步骤出现在对从所述RF功率发生器向所述负载传送的功率进行调谐的期间。
12.如权利要求8所述的方法，进一步包括在所述熄灭电弧的步骤期间，保持所述动态边界恒定的步骤。
13.一种射频功率传送系统，包括：
a)RF功率发生器，其中所述RF功率发生器提供与从所述RF功率发生器向等离子体负载传送的功率相关的参数的测量值；
b)电弧检测电路，其针对所述参数的值计算动态边界，其中所述动态边界是基于所述参数的测量值而动态变化的；以及
c)响应于所述电弧检测电路的控制器逻辑电路，其中如果所述参数的随后的值超过了所述动态边界，则所述控制器逻辑电路指示在所述等离子体负载内出现了电弧。
14.如权利要求13所述的系统，其中所述参数是反射功率。
15.如权利要求13所述的系统，其中所述参数是DC偏置。
16.如权利要求13所述的系统，其中所述电弧检测电路基于所述参数的滤波后的值计算所述动态边界。
17.如权利要求16所述的系统，其中所述电弧检测电路包括快速滤波器和慢速滤波器，并且其中所述电弧检测电路基于由所述慢速滤波器滤波后的所述参数，计算所述动态边界，并且如果由所述快速滤波器滤波后的所述参数的随后的值超过了所述动态边界，则所述控制器逻辑电路指示出现了电弧。
18.如权利要求13所述的系统，其中所述电弧检测电路基于至少两个与从所述RF功率发生器向所述负载传送的功率相关的参数的值，计算所述动态边界。
19.如权利要求13所述的系统，其中所述动态边界包括上限和下限。
20.如权利要求13所述的系统，其中所述电弧检测电路基于所述参数的用户定义的偏移量，计算所述动态边界。
21.如权利要求13所述的系统，进一步包括响应于所述控制器逻辑电路的开关，其进行动作以便熄灭电弧。
22.如权利要求21所述的系统，其中所述开关中断传送至所述负载的功率以熄灭电弧。
23.一种等离子体处理系统，包括
a)等离子体处理腔；
b)RF功率发生器，其向所述等离子体处理腔中的等离子体传送RF功率；
c)针对参数的值计算动态边界的电弧检测电路，其中所述动态边界是基于所述参数的测量值而动态变化的；以及
d)响应于所述电弧检测电路的控制器逻辑电路，其中如果所述参数的随后的值超过了所述动态边界，则所述控制器逻辑电路指示出现了电弧。
24.如权利要求23所述的系统，其中所述参数是反射功率。
25.如权利要求23所述的系统，其中所述参数是DC偏置。
26.如权利要求23所述的系统，其中所述电弧检测电路基于所述参数的滤波后的值计算所述动态边界。
27.如权利要求26所述的系统，其中所述电弧检测电路包括快速滤波器和慢速滤波器，并且其中所述电弧检测电路基于由所述慢速滤波器滤波后的所述参数，计算所述动态边界，并且如果由所述快速滤波器滤波后的所述参数的随后的值超过了所述动态边界，则所述控制器逻辑电路指示出现了电弧。
28.如权利要求23所述的系统，其中所述电弧检测电路基于至少两个与从所述RF功率发生器向所述负载传送的功率相关的参数的值，计算所述动态边界。
29.如权利要求23所述的系统，其中所述动态边界包括上限和下限。
30.如权利要求23所述的系统，其中所述电弧检测电路基于所述参数的用户定义的偏移量，计算所述动态边界。
31.如权利要求23所述的系统，进一步包括响应于所述控制器逻辑电路的开关，其进行动作以便熄灭电弧。
32.如权利要求31所述的系统，其中所述开关中断传送至所述负载的功率以熄灭电弧。
33.如权利要求23所述的系统，进一步包括设置在所述RF功率发生器和所述等离子体处理腔之间的阻抗匹配网络。
34.如权利要求31所述的系统，进一步包括设置在所述RF功率发生器和所述等离子体处理腔之间的阻抗匹配网路，并且其中所述开关在所述阻抗匹配网络调谐期间进行动作以熄灭电弧。
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