CN101189180B - 用于微部件的薄封装 - Google Patents
用于微部件的薄封装 Download PDFInfo
- Publication number
- CN101189180B CN101189180B CN2006800172603A CN200680017260A CN101189180B CN 101189180 B CN101189180 B CN 101189180B CN 2006800172603 A CN2006800172603 A CN 2006800172603A CN 200680017260 A CN200680017260 A CN 200680017260A CN 101189180 B CN101189180 B CN 101189180B
- Authority
- CN
- China
- Prior art keywords
- chip
- microcomponent
- metallization
- feed
- encapsulation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00261—Processes for packaging MEMS devices
- B81C1/00301—Connecting electric signal lines from the MEMS device with external electrical signal lines, e.g. through vias
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/02—Containers; Seals
- H01L23/10—Containers; Seals characterised by the material or arrangement of seals between parts, e.g. between cap and base of the container or between leads and walls of the container
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/481—Internal lead connections, e.g. via connections, feedthrough structures
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2207/00—Microstructural systems or auxiliary parts thereof
- B81B2207/09—Packages
- B81B2207/091—Arrangements for connecting external electrical signals to mechanical structures inside the package
- B81B2207/094—Feed-through, via
- B81B2207/096—Feed-through, via through the substrate
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C2203/00—Forming microstructural systems
- B81C2203/01—Packaging MEMS
- B81C2203/0118—Bonding a wafer on the substrate, i.e. where the cap consists of another wafer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01079—Gold [Au]
Abstract
Description
Claims (44)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/082,507 US7553695B2 (en) | 2005-03-17 | 2005-03-17 | Method of fabricating a package for a micro component |
US11/082,507 | 2005-03-17 | ||
PCT/IB2006/000661 WO2006097842A1 (en) | 2005-03-17 | 2006-03-15 | Thin package for a micro component |
Publications (2)
Publication Number | Publication Date |
---|---|
CN101189180A CN101189180A (zh) | 2008-05-28 |
CN101189180B true CN101189180B (zh) | 2012-07-18 |
Family
ID=36678607
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2006800172603A Active CN101189180B (zh) | 2005-03-17 | 2006-03-15 | 用于微部件的薄封装 |
Country Status (5)
Country | Link |
---|---|
US (1) | US7553695B2 (zh) |
JP (1) | JP5133867B2 (zh) |
CN (1) | CN101189180B (zh) |
HK (1) | HK1121731A1 (zh) |
WO (1) | WO2006097842A1 (zh) |
Families Citing this family (34)
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---|---|---|---|---|
EP1515364B1 (en) | 2003-09-15 | 2016-04-13 | Nuvotronics, LLC | Device package and methods for the fabrication and testing thereof |
US7303976B2 (en) * | 2005-05-10 | 2007-12-04 | Hewlett-Packard Development Company, L.P. | Wafer bonding method |
US20070170528A1 (en) | 2006-01-20 | 2007-07-26 | Aaron Partridge | Wafer encapsulated microelectromechanical structure and method of manufacturing same |
DK1962344T3 (da) | 2007-02-25 | 2012-07-02 | Samsung Electronics Co Ltd | Emballager til elektroniske indretninger og fremgangsmåder til fremstilling |
DE102007034306B3 (de) | 2007-07-24 | 2009-04-02 | Austriamicrosystems Ag | Halbleitersubstrat mit Durchkontaktierung und Verfahren zur Herstellung eines Halbleitersubstrates mit Durchkontaktierung |
US20090181500A1 (en) * | 2008-01-15 | 2009-07-16 | Jochen Kuhmann | Fabrication of Compact Semiconductor Packages |
US7851818B2 (en) * | 2008-06-27 | 2010-12-14 | Taiwan Semiconductor Manufacturing Company, Ltd. | Fabrication of compact opto-electronic component packages |
DE102008033395B3 (de) * | 2008-07-16 | 2010-02-04 | Austriamicrosystems Ag | Verfahren zur Herstellung eines Halbleiterbauelementes und Halbleiterbauelement |
JP2010067722A (ja) * | 2008-09-09 | 2010-03-25 | Freescale Semiconductor Inc | 電子装置及びその電子装置に用いる構造体の製造方法 |
US20100176507A1 (en) * | 2009-01-14 | 2010-07-15 | Hymite A/S | Semiconductor-based submount with electrically conductive feed-throughs |
US8309973B2 (en) * | 2009-02-12 | 2012-11-13 | Taiwan Semiconductor Manufacturing Company, Ltd. | Silicon-based sub-mount for an opto-electronic device |
US8729591B2 (en) | 2009-02-13 | 2014-05-20 | Tsmc Solid State Lighting Ltd. | Opto-electronic device package with a semiconductor-based sub-mount having SMD metal contacts |
FR2943177B1 (fr) | 2009-03-12 | 2011-05-06 | Soitec Silicon On Insulator | Procede de fabrication d'une structure multicouche avec report de couche circuit |
US7838878B2 (en) * | 2009-03-24 | 2010-11-23 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor-based sub-mounts for optoelectronic devices with conductive paths to facilitate testing and binning |
FR2947380B1 (fr) * | 2009-06-26 | 2012-12-14 | Soitec Silicon Insulator Technologies | Procede de collage par adhesion moleculaire. |
WO2011037534A1 (en) * | 2009-09-25 | 2011-03-31 | Agency For Science, Technology And Research | A wafer level package and a method of forming a wafer level package |
CN102153044B (zh) * | 2010-02-12 | 2015-08-26 | 菱生精密工业股份有限公司 | 微机电封装模块 |
WO2011109442A2 (en) * | 2010-03-02 | 2011-09-09 | Oliver Steven D | Led packaging with integrated optics and methods of manufacturing the same |
US20110221018A1 (en) * | 2010-03-15 | 2011-09-15 | Xunqing Shi | Electronic Device Package and Methods of Manufacturing an Electronic Device Package |
DE102010056572B4 (de) | 2010-12-30 | 2018-12-27 | Snaptrack, Inc. | Elektronisches Bauelement und Verfahren zur Herstellung des elektronischen Bauelements |
DE102010056562B4 (de) * | 2010-12-30 | 2018-10-11 | Snaptrack, Inc. | Elektroakustisches Bauelement und Verfahren zur Herstellung des elektroakustischen Bauelements |
KR101131782B1 (ko) | 2011-07-19 | 2012-03-30 | 디지털옵틱스 코포레이션 이스트 | 집적 모듈용 기판 |
CN102928150B (zh) * | 2012-10-26 | 2014-11-19 | 中国电子科技集团公司第四十八研究所 | 一种无引线封装的金属薄膜压力传感器及其制备方法 |
FR3008691B1 (fr) * | 2013-07-22 | 2016-12-23 | Commissariat Energie Atomique | Dispositif comportant un canal fluidique muni d'au moins un systeme micro ou nanoelectronique et procede de realisation d'un tel dispositif |
US9413464B2 (en) * | 2013-09-09 | 2016-08-09 | Finisar Corporation | Optoelectronic assembly for signal conversion |
FR3019375B1 (fr) * | 2014-03-31 | 2016-05-06 | Commissariat Energie Atomique | Procede de realisation d'un boitier hermetique destine a l'encapsulation d'un dispositif implantable et boitier correspondant |
CN104445046B (zh) * | 2014-06-24 | 2016-05-18 | 华天科技(昆山)电子有限公司 | 新型晶圆级mems芯片封装结构及其封装方法 |
US9165873B1 (en) * | 2014-07-28 | 2015-10-20 | Texas Instruments Incorporated | Semiconductor package having etched foil capacitor integrated into leadframe |
US9142496B1 (en) * | 2014-07-28 | 2015-09-22 | Texas Instruments Incorporated | Semiconductor package having etched foil capacitor integrated into leadframe |
WO2017196577A1 (en) | 2016-04-29 | 2017-11-16 | Finisar Corporation | Interfacing chip on glass assembly |
US10319654B1 (en) | 2017-12-01 | 2019-06-11 | Cubic Corporation | Integrated chip scale packages |
RU2693796C1 (ru) * | 2018-11-24 | 2019-07-04 | Федеральное государственное бюджетное учреждение науки Институт проблем механики им. А.Ю. Ишлинского Российской академии наук (ИПМех РАН) | Устройство для испытания материалов на трение и износ |
DE102019102836B4 (de) * | 2019-02-05 | 2023-02-02 | Infineon Technologies Ag | Verfahren mit panel-bonding-handlungen und elektronische vorrichtungen mit hohlräumen |
CN111821567A (zh) * | 2019-03-30 | 2020-10-27 | 深圳硅基仿生科技有限公司 | 电子封装体及植入式器件 |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1544901A (zh) * | 2003-11-12 | 2004-11-10 | 王文襄 | 一种微型动态压阻压力传感器及其制造方法 |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5798557A (en) * | 1996-08-29 | 1998-08-25 | Harris Corporation | Lid wafer bond packaging and micromachining |
JP2000186931A (ja) * | 1998-12-21 | 2000-07-04 | Murata Mfg Co Ltd | 小型電子部品及びその製造方法並びに該小型電子部品に用いるビアホールの成形方法 |
US6228675B1 (en) | 1999-07-23 | 2001-05-08 | Agilent Technologies, Inc. | Microcap wafer-level package with vias |
JP2001351997A (ja) * | 2000-06-09 | 2001-12-21 | Canon Inc | 受光センサーの実装構造体およびその使用方法 |
US6818464B2 (en) * | 2001-10-17 | 2004-11-16 | Hymite A/S | Double-sided etching technique for providing a semiconductor structure with through-holes, and a feed-through metalization process for sealing the through-holes |
WO2003054927A2 (en) * | 2001-11-07 | 2003-07-03 | The Board Of Trustees Of The University Of Arkansas | Structure and process for packaging rf mems and other devices |
US20030119308A1 (en) * | 2001-12-20 | 2003-06-26 | Geefay Frank S. | Sloped via contacts |
SG111972A1 (en) * | 2002-10-17 | 2005-06-29 | Agency Science Tech & Res | Wafer-level package for micro-electro-mechanical systems |
JP2004212326A (ja) * | 2003-01-08 | 2004-07-29 | Matsushita Electric Ind Co Ltd | マイクロポンプと試料処理チップ、及びシートコネクタ |
JP4342174B2 (ja) * | 2002-12-27 | 2009-10-14 | 新光電気工業株式会社 | 電子デバイス及びその製造方法 |
JP2004306217A (ja) * | 2003-04-09 | 2004-11-04 | Sony Corp | マイクロマシンおよびその製造方法 |
JP2004345015A (ja) * | 2003-05-21 | 2004-12-09 | Sumitomo Heavy Ind Ltd | マイクロデバイスの製造方法 |
US6953990B2 (en) * | 2003-09-19 | 2005-10-11 | Agilent Technologies, Inc. | Wafer-level packaging of optoelectronic devices |
JP2006212473A (ja) * | 2005-02-01 | 2006-08-17 | Pentax Corp | マイクロ化学チップ |
-
2005
- 2005-03-17 US US11/082,507 patent/US7553695B2/en active Active
-
2006
- 2006-03-15 WO PCT/IB2006/000661 patent/WO2006097842A1/en not_active Application Discontinuation
- 2006-03-15 CN CN2006800172603A patent/CN101189180B/zh active Active
- 2006-03-15 JP JP2008501443A patent/JP5133867B2/ja active Active
-
2008
- 2008-11-27 HK HK08112984.5A patent/HK1121731A1/xx unknown
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1544901A (zh) * | 2003-11-12 | 2004-11-10 | 王文襄 | 一种微型动态压阻压力传感器及其制造方法 |
Non-Patent Citations (3)
Title |
---|
A. Morrissey.Selection of materials for reduced stress packaging of amicrosystem.Sensors and Actuators74.1999,74正文第1部分第2段,第2、3部分,图1、图2. * |
Zhihong Li et al..An SOI-MEMS technology using substrate layer and bondedglass as wafer-level package.Sensors and Actuators A96.2002,96正文第2部分第1段,图1e. * |
蒋玉齐.高量程MEMS加速度计封装研究.中国博士学位论文全文数据库2004.2004,2004第五章5.3节. * |
Also Published As
Publication number | Publication date |
---|---|
HK1121731A1 (en) | 2009-04-30 |
JP5133867B2 (ja) | 2013-01-30 |
US20060210234A1 (en) | 2006-09-21 |
US7553695B2 (en) | 2009-06-30 |
CN101189180A (zh) | 2008-05-28 |
WO2006097842A1 (en) | 2006-09-21 |
JP2008533733A (ja) | 2008-08-21 |
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PB01 | Publication | ||
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Ref country code: HK Ref legal event code: DE Ref document number: 1121731 Country of ref document: HK |
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ASS | Succession or assignment of patent right |
Owner name: TAIWEN INTEGRATED CIRCUIT MANUFACTURE CO., LTD. Free format text: FORMER OWNER: HYMITE AS Effective date: 20110314 |
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C41 | Transfer of patent application or patent right or utility model | ||
COR | Change of bibliographic data |
Free format text: CORRECT: ADDRESS; FROM: LYNGBY, DENMARK TO: NO. 8, LIXING ROAD 6, HSINCHU SCIENCE PARK, TAIWAN PROVINCE, CHINA |
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TA01 | Transfer of patent application right |
Effective date of registration: 20110314 Address after: Hsinchu Science Park, Taiwan, China force line six, No. eight Applicant after: Taiwan Semiconductor Manufacturing Co.,Ltd. Address before: Danish spirits Applicant before: Schmidt Co.,Ltd. |
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C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
C41 | Transfer of patent application or patent right or utility model | ||
C56 | Change in the name or address of the patentee | ||
CP01 | Change in the name or title of a patent holder |
Address after: Hsinchu City, Taiwan, China Patentee after: EPISTAR Corp. Address before: Hsinchu City, Taiwan, China Patentee before: Yuanxin Optoelectronics Co.,Ltd. |
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TR01 | Transfer of patent right |
Effective date of registration: 20160516 Address after: Hsinchu City, Taiwan, China Patentee after: Yuanxin Optoelectronics Co.,Ltd. Address before: Hsinchu Science Park, Taiwan, China force line six, No. eight Patentee before: Taiwan Semiconductor Manufacturing Co.,Ltd. |