The method of testing aluminum expansion bug
Technical field
The present invention relates to the method for testing aluminum expansion bug structure in method of testing, particularly wafer (wafer) manufacturing process in a kind of semiconductor manufacturing.
Background technology
When making wafer,, can directly cause yield of products to descend, therefore in wafer manufacturing process, need aluminum expansion bug is monitored if there is aluminum expansion bug.The aluminum expansion bug method for supervising that adopts mainly is to realize by wafer scan (wafer scan) at present, the wafer scan method is by relatively finding out aluminum expansion bug between the chip (die), promptly by method of optics adjacent repetitive pattern is relatively judged whether to exist aluminum expansion bug.
The above-mentioned method of utilizing wafer scan that aluminum expansion bug is monitored is that wafer is taken a sample test, and can't monitor all wafers, and the testing time is longer, and the device therefor cost is higher.
Summary of the invention
The technical problem to be solved in the present invention provides a kind of method of the testing aluminum expansion bug that can monitor wafer aluminum expansion bug situation.
For solving the problems of the technologies described above, the method for testing aluminum expansion bug of the present invention may further comprise the steps: tested object is selected step, selects in the scribe line on the mask first aluminium and and second slice aluminium surrounding first slice aluminium adjacent with first aluminium as tested object; Measuring process is measured the resistance between this first aluminium and this second aluminium; Determining step, if between this first aluminium and this second aluminium is electric short circuit, then judge between the aluminum steel on this mask to have aluminum expansion bug,, then judge not have aluminum expansion bug between the aluminum steel on this mask if be electrical open between this first aluminium and this second aluminium.
First aluminium quantity is a plurality of, in measuring process, is electrically connected between all first aluminium.
In measuring process, adopt wafer electrical characteristics tester to measure resistance between first aluminium and second aluminium.
The present invention selects figure that the easiest first aluminium that aluminum expansion bug occurs surrounded by second aluminium as tested object, and judge whether there is aluminum expansion bug on the wafer mask by electric short circuit between this first aluminium and this second aluminium or electrical open, its test process is convenient simple and direct, and its judged result is accurate.
Description of drawings
Fig. 1 is when adopting method provided by the present invention to test, the easiest selected situation that aluminum expansion bug occurs, and wherein first aluminium and second aluminium are adjacent and surrounded by second aluminium;
Fig. 2 is when figure shown in Figure 1 is tested, the test pin connection diagram, and this figure is the schematic cross-section along C-C direction among Fig. 1;
Fig. 3 is the generating process schematic diagram that aluminium expands, and the situation that aluminium expands is represented not take place in the left side, and the situation after the aluminium expansion takes place is represented on the right side, and after generation aluminium expands, but first aluminium and second aluminium of original adjacent each self-separation link together in a corner;
Fig. 4 uses method provided by the present invention the figure that has different spacing between first aluminium and second aluminium is compared test, distance between first aluminium that is comprised among the empty frame a and second aluminium is Sa, distance between first aluminium that is comprised among the empty frame b and second aluminium is Sb, and Sa>Sb;
Fig. 5 is when figure shown in Figure 4 is tested, the test pin connection diagram.
Specific implementation method
The present invention is further detailed explanation below in conjunction with accompanying drawing.
When Fig. 1 represents to adopt method provided by the present invention to test, the easiest typical graphics that aluminum expansion bug occurs, wherein second aluminium 2 is large stretch of aluminium, has wherein surrounded first aluminium 1 of a plurality of small pieces, these first aluminium 1 is adjacent with second aluminium.Test pin during test connects as shown in Figure 2, and Fig. 2 is the schematic cross-section along C-C direction among Fig. 1, and first aluminium pin 21 is electrically connected with all first aluminium 1, and second aluminium pin 22 and second aluminium 2 are electrically connected.
Fig. 3 is the generating process schematic diagram that expands when aluminium, and the situation that aluminium expands is represented not take place in the left side, shows as open circuit on electric; The situation after the aluminium expansion takes place is represented on the right side, and after generation aluminium expands, but original adjacent first aluminium and second aluminium separately linked together in a corner, thereby showed as short circuit on electric.
Utilize wafer electrical characteristics tester (WAT) in the time of test, by first aluminium pin 21 and second resistance that aluminium pin 22 is measured between this first aluminium 1 and this second aluminium.If between this first aluminium pin 21 and this second aluminium pin 22 is electric short circuit, then correspondingly, must there be aluminum expansion bug between these a plurality of first aluminium 1 and this second aluminium 2, judge in view of the above between the aluminum steel on this mask to have aluminum expansion bug.If between this first aluminium pin 21 and this second aluminium pin 22 is electrical open, then correspondingly, for open circuit, there is not aluminum expansion bug between the aluminum steel on this mask of decidable thus between these a plurality of first aluminium 1 and this second aluminium 2.
The present invention can also be used to the aluminium expansion situation of the figure of different process size is studied.As shown in Figure 4, a plurality of first aluminium that comprise among the empty frame a are called first aluminium 1a of a group, a plurality of first aluminium that comprise among the empty frame b are called first aluminium 1b of b group; Distance between first aluminium that is comprised among the empty frame a and second aluminium is Sa, and the distance between first aluminium that is comprised among the empty frame b and second aluminium is Sb, and Sa>Sb.With the corresponding test pin annexation of Fig. 4 as shown in Figure 5, second aluminium pin 22 connects second aluminium, first aluminium pin 21a of a group connects the first aluminium 1a of all a groups that is comprised among the empty frame a; First aluminium pin 21b of b group connects the first aluminium 1b of all b groups that is comprised among the empty frame b.
Under different situations, test result and the available following table of the judgement of aluminum expansion bug represented:
|
22-21a |
22-21b |
Aluminum expansion bug is judged |
Test result 1 |
Open circuit |
Open circuit |
All there is not aluminum expansion bug among the empty frame a with among the empty frame b |
Test result |
2 |
Open circuit |
Short circuit |
There is not aluminum expansion bug among the empty frame a; There is aluminum expansion bug among the empty frame b |
Test result 3 |
Short circuit |
Short circuit |
All there is aluminum expansion bug among the empty frame a with among the empty frame b |
If test result 2, then show when first aluminium and second aluminium to be between Sa and the Sb, aluminum expansion bug may appear.
The present invention utilizes wafer electrical characteristics tester to monitor the aluminium expansion situation on the wafer mask in the production line, can cover all wafers, tests quick and convenient; In addition, by the different figure of distance between aluminum steel is compared, more the variation of refinement monitoring process is to the influence of aluminium expansion.