CN101140915B - Heat radiation substrate - Google Patents
Heat radiation substrate Download PDFInfo
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- CN101140915B CN101140915B CN2006101286942A CN200610128694A CN101140915B CN 101140915 B CN101140915 B CN 101140915B CN 2006101286942 A CN2006101286942 A CN 2006101286942A CN 200610128694 A CN200610128694 A CN 200610128694A CN 101140915 B CN101140915 B CN 101140915B
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- heat radiation
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- radiation substrate
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Abstract
A thermolytic underlay of the electronic component comprises a first metal layer, a second metal layer and a heat-conducting macromolecule dielectric insulated material layer. The said first metal layer surface bears the said electronic component like the LED component. The heat-conducting macromolecule dielectric insulated material layer is lapped between the first and second metal layer to formphysical contact, wherein the interface includes at least one slightly rugged face with the roughness concentration larger than 7.0 Rz. The said slightly rugged face includes a plurality of grain diameters of the strumae mainly distributed between 0.1 and 100 micron. The coefficient of heat conductivity of the said heat-conducting macromolecule dielectric insulated material layer is larger than 1W/m is multiplied by K with thickness less than 0.5mm and contains fluorinated high molecular polymer (1) with the melting point higher than 150 degrees centigrade and the volume percent between 40% and 70%, and the heat-conducting stuffing (2) interspersed among the said fluorinated high molecular polymer with the volume percent between 40% and 70%.
Description
Technical field
The present invention relates to a kind of heat radiation substrate, relate in particular to the heat radiation substrate that is used for electronic element radiating.
Background technology
In recent years, white light emitting diode (LED) was the emerging product that is expected most and attracted attention by the whole world.It has that volume is little, power consumption is low, the life-span is long and advantage such as reaction speed is good, can solve the problem that incandescent lamp bulb was difficult to overcome in the past.LED is applied to markets such as display backlight source, mini projector, illumination and auto lamp source and more and more obtains to pay attention to.
States such as America and Europe and Japan are based on the common recognition of energy savings and environmental protection at present, and all the active development white light emitting diode is as the new light sources of illumination in this century.Add the energy of present many countries and all be dependent on import, make that its development on illumination market is valuable.According to expert assessment and evaluation, every year then can be saved 1～2 generated energy from a power plant if all incandescent lamps are replaced with white light emitting diode by Japan, and the fuel consumption that reduces reaches 1,000,000,000 liters indirectly, and the carbon dioxide that is discharged in power generation process also can reduce, and then suppressed greenhouse effect.Base this, advanced countries such as at present American-European and Japan have all bet very many manpowers and have promoted to research and develop.Expectation can generally substitute traditional ligthing paraphernalia in following 10 years.
Yet for illuminating high-capacity LED, power of its input LED has only 15～20% to convert light to approximately, and all the other 80～85% convert heat to.If these heat loss in good time are to environment, will make that the interface temperature of LED element is too high and influence its luminous intensity and useful life.Therefore, the heat management problems of LED element more and more comes into one's own.
No matter be display backlight source or general lighting, normally a plurality of LED elements are assembled on the circuitry substrate.Circuitry substrate also need provide the function of heat radiation except playing the part of the role of carrying led module.As long as the operating current of tradition LED only is about about 20mA, and little because of caloric value, its heat dissipation problem is also not serious, therefore the Copper Foil printed circuit board (PCB) (PCB) that the general electronics of utilization is used.But along with the widespread usage of high-capacity LED, its operating current can reach more than the 1A, and the printed circuit board (PCB) (the about 0.3W/mK of coefficient of heat transfer) that routine utilizes glass fibre FR4 surface that Copper Foil is set has been not enough to deal with radiating requirements.
Summary of the invention
Main purpose of the present invention provides a kind of heat radiation substrate, it has excellent heat dissipation characteristics, and have high voltage withstanding dielectric insulation characteristic, deflection mechanical structure characteristic concurrently, and the good tension intensity that engages of metal level and heat-conducting polymer dielectric insulation material interlayer, and provided for example application (for example clamshell phone) of high-power components such as LED.
In order to achieve the above object, the present invention discloses a kind of heat radiation substrate, and it comprises a first metal layer, one second metal level and a heat-conducting polymer dielectric insulation material layer.The described electronic component of the surface bears of described the first metal layer (for example light-emitting diode (LED) element).Described heat-conducting polymer dielectric insulation material is stacked to be located between the described the first metal layer and second metal level and to form the physics contact, the interface of described heat-conducting polymer dielectric insulation material layer and described first and second metal levels comprises at least one slightly rough surface (roughness Rz is greater than 7.0, according to JIS B 0,601 1994).Described slightly rough surface comprises a plurality of warty protrusions, and the particle diameter of described warty protrusion mainly is distributed between 0.1 to 100 micron, the conductive coefficient of described heat-conducting polymer dielectric insulation material layer is greater than 1W/mK, thickness is less than 0.5mm, and comprise: (1) fluoro containing polymers polymer, its fusing point is higher than 150 ℃, and percent by volume is between 30-60%; And (2) heat filling, intersperse among in the described fluoro containing polymers polymer, and its percent by volume is between 40-70%.
Described heat radiation substrate can be by the proof voltage test of 5KV, described heat radiation substrate places 260 ℃ tin stove 5 minutes, surface nothing foaming and outward appearance are unusual, and the tension intensity of described heat-conducting polymer dielectric insulation material layer and described first and second metal interlevel is greater than 8N/cm.
Preferably, described fluoro containing polymers polymer is optional from polyvinylidene fluoride (Poly Vinylidene Fluoride; PVDF) or polyethylene-tetrafluoroethene (polyethylenetetrafluoroethylene; PETFE), and fusing point to be being good greater than 150 ℃, and with greater than 220 ℃ for better.Described heat filling then can be selected for use as ceramic Heat Conduction Materials such as nitride and oxides.
Heat radiation substrate of the present invention also can make described heat-conducting polymer dielectric insulation material layer interlinkage solidify through the radiation exposure of 0～20Mrad, except tool good heat conduction and insulation effect, if the described the first metal layer and second metal layer thickness are made respectively less than 0.1mm and 0.2mm, and the thickness of described heat-conducting polymer dielectric insulation material layer is less than 0.5mm (0.3mm is better), it can become the deflection test of 5mm diameter cylinder by the test substrate that 1cm is wide around song, the situation that its surface does not have fracture or slight crack takes place, and uses and must be used for folding product.
In addition, because of fluoro-containing macromolecule material generally all has higher melt (for example PVDF is about 165 ℃, about 240 ℃ of PETFE) and tool flame-retarding characteristic, can be high temperature resistant, and be difficult for catching fire, and have more the using value on the safety.
Description of drawings
The heat radiation substrate of Fig. 1 illustration one embodiment of the invention.
Embodiment
Referring to Fig. 1, a LED element 10 is carried on the heat radiation substrate 20.Described heat radiation substrate 20 comprises the heat-conducting polymer dielectric insulation material layer 23 that a first metal layer 21, one second metal level 22 and are stacked at 22 of described the first metal layer 21 and second metal levels.Described LED element 10 is arranged at described the first metal layer 21 surfaces, and described first and second metal level 21 and 22 forms physics with the interface of 23 on described heat-conducting polymer dielectric insulation material layer and contacts, and wherein at least one interface is a slightly rough surface, described slightly rough surface comprises a plurality of warty protrusions, and the particle diameter of described warty protrusion mainly is distributed between 0.1 to 100 micron, increases tension intensity to each other by this.
The production method illustration of above-mentioned heat radiation substrate 20 is as follows: will criticize formula mixing roll (HAAKE-600P) feeding temperature and fix on material melting point (Tm)+20 ℃, and add the prescription premix (raw material places steel bowl to stir with measuring spoon earlier) of described heat-conducting polymer dielectric insulation material layer 23.The rotating speed of mixing roll rotation is 40rpm when initial, after 3 minutes its rotating speed is increased to 70rpm, continues blanking after mixing 15 minutes, and forms a heat radiation composite material with heat dissipation characteristics.
It is steel plate that above-mentioned heat radiation composite material is inserted skin with symmetric mode up and down, and interior thickness is in the mould of desired thickness (for example 0.15mm), and mould is respectively put the not imperial release cloth of one deck iron up and down, first preheating 5 minutes, 15 minutes (operating pressure 150kg/cm of pressing again
2, the same melting temperature of temperature), forming a thickness afterwards is the heat radiation thin slice of 0.15mm.
With described heat radiation thin slice upper and lower put described the first metal layer 21 and second metal level 22 again pressing once, first preheating 5 minutes, 5 minutes (operating pressure 150kg/cm of pressing again
2, the same melting temperature of temperature), be described heat-conducting polymer dielectric insulation material layer 23 in the middle of forming, and the heat radiation substrate 20 of fit the up and down described the first metal layer 21 and second metal level 22.
Table one is depicted as the pulling force and the proof voltage test experiments result of different roughness, and wherein heat-conducting polymer dielectric insulation material layer 23 is selected polyvinylidene fluoride (Poly Vinylidene Fluoride for use; PVDF) (about 165 ℃ of fusing point) is base material, and scatters heat filling aluminium oxide (Al in PVDF
2O
3), and both percents by volume are respectively 40% and 60%.In the present embodiment, the thickness of described heat-conducting polymer material layer 23 is all less than 0.3mm.Described pulling experiment meets Japanese JIS C6481 standard, with the peel strength between test interface.
Table one
As shown in Table 1, the surface roughness of control group (Rz) is between 3.0～4.5 that it is less than the experimental group of numbering 1-6, and its pulling force 7.5N/cm is much smaller than the pulling force (at least greater than 8.0N/cm) of the experimental group of numbering 1-6.Apparent bigger surface roughness can increase described heat-conducting polymer dielectric insulation material layer 23 and first and second metal levels 21 and 22 s' peel strength.In addition, all experimental group all can be passed through the proof voltage test of 5kV (or at least greater than 3kV), and its conductive coefficient is all greater than 1.0W/mK.
Table two is the test comparison sheets at different types of high molecular polymer.
Table two
| Numbering | High molecular polymer | Heat-conducting polymer material layer thickness (mm) | Conductive coefficient (W/mK) | Pulling force (N/cm) | Flexibility (5mm) | Tin stove test (260 ℃) | The proof voltage test |
| 1 | PVDF | 0.22 | 1.6 | 14.5 | PASS | PASS | ＞5kV |
| 2 | PETFE | 0.24 | 1.7 | 16.8 | PASS | PASS | ＞7kV |
| Control group 1 | HDPE | 0.21 | 1.7 | 15.7 | PASS | FAIL | ＜2kV |
| Control group 2 | EPOXY | 0.20 | 1.6 | 22.1 | FAIL | PASS | ＞3kV |
The experimental group of numbering 1 and 2 is selected PVDF and PETFE (Tefzel respectively for use
TM) as polymeric substrate, and heat filling is selected aluminium oxide (Al for use
2O
3), control group 1 and 2 polymer are then selected not fluorine-containing high-molecular polythene (HDPE) and epoxy resin (EPOXY) for use.The polymer of above-mentioned experimental group and control group and the percent by volume of heat filling are 40% and 60%, and adopt roughness Rz to be all the Copper Foil of 7.0-9.0 as first and second metal level.
Described epoxy resin (EPOXY) control group comprises liquid epoxy resin, Novolac resin, dicyandiamide (dicyandiamide), urea seeding agent (urea catalyst), aluminium oxide (Al
2O
3).Described liquid epoxy resin adopts the model DER331 product of Dow Chemical (Dow Chemical Company); The Novolac resin adopts the model DEN438 product of Dow Chemical; Dicyandiamide adopts the Dyhard 100S of Degussa Fine Chemicals company; The Dyhard UR500 of Degussa Fine Chemicals company is adopted in described urea seeding agent; Between in 5 to 45 microns of the granular sizes of described aluminium oxide, it originates from Denki Kagaku Kogyo Kabushiki Kaisya company.
Described epoxy resin (EPOXY) can be according to the preparation of following method: the DEN438 that mixes 50 parts DER331 and 50 parts in-80 ℃ resin kettle (resin kettle) up to formation homogeneity solution (homogeneous solution).Next adds 10 parts of Dyhard 100S and 3 parts of Dyhard UR300 continue to mix 20 minutes in 80 ℃ in described resin kettle.Afterwards, the Al that adds 570 parts
2O
3Filler is in described resin kettle and continue to mix to intersperse among fully in the described resin up to described filler and form resin slurry (slurry).Contained gas is 30 minutes in the vacuum removal resin slurry, then the resin slurry is positioned over a copper foil surface, and it is surperficial to form one Copper Foil/resin slurry/Copper Foil composite construction in described resin slurry to place another Copper Foil.Described Copper Foil/resin slurry/Copper Foil composite construction places-metal frame that 3mm is thick, and use rubber cylinder to carry out planarization for described copper foil surface.Place 130 ℃ of stoves to carry out precuring (pre-cure) 1 hour described composite construction (together with metal frame).(vacuum degree is 10torr, and pressure is 50kg/cm afterwards described composite construction to be placed a vacuum hotpressing machine together with metal frame
2), further be cured 1 hour in 150 ℃ temperature.With described composite construction in 50kg/cm
2Pressure under be cooled to and be lower than 50 ℃, and by removing described composite construction in the described hot press.
The following test of test substrate process with described PVDF and PETFE experimental group and HDPE and EPOXY control group:
1. can be around song: the test substrate that 1cm is wide becomes the cylinder of 5mm diameter around song, and can not there be the situation of fracture or slight crack on the surface.
2. tin stove test: test substrate is placed 260 ℃ tin stove 5 minutes, the surface can not have bubble or other outward appearance unusual.
3. pulling force (peel strength) test: carry out according to the JIS C6481 of Japanese Industrial Standards.
4. dielectric strength (insulation breakdown voltage) test: i.e. proof voltage test, carry out according to the JIS C2110 of Japanese Industrial Standards.
As shown in Table 2, fluorine-containing high molecular polymer PVDF and the experimental group of PETFE have good flexibility and high-temperature stability, and also can bear the high voltage more than the 5kV by the proof voltage test.Review, adopting HDPE is the control group 1 of polymer, though by the flexibility test, yet it does not pass through 260 ℃ tin stove high temperature test, and proof voltage is significantly less than the experimental group of numbering 1 and 2 less than 2kV.As for adopting EPOXY is the control group 2 of polymer, though can be by the tin stove test of high temperature, do not have a flexibility yet its hardness is higher.
In addition, the fluorine material of above-mentioned PVDF and PETFE has nonflammable and not combustion-supporting characteristic (meeting UL 94V-0), more can provide application on the safety and compare with HDPE and EPOXY.
The percent by volume of described fluoro containing polymers polymer and heat filling can be done the adjustment of certain degree and still keep same characteristic.Preferably, the percent by volume of described fluoro containing polymers polymer is between 30-60%; And the percent by volume of heat filling is between 40-70%, and especially with percentage between 50-65% for better.
Except above-mentioned material selection, the heat-conducting polymer polymer also can be selected polytetrafluoroethylene (poly (tetrafluoroethylene) for use; PTFE), tetrafluoraoethylene-hexafluoropropylene copolymer (tetrafluoroethylene-hexafluoro-propylene copolymer; FEP), ethylene-tetrafluoroethylene copolymer (ethylene-tetrafluoroethylene copolymer; ETFE), perfluor alcoxyl upgrading tetrafluoroethene (perfluoroalkoxymodified tetrafluoroethylenes; PFA), poly-(chlorine three-fluorine tetrafluoroethene) (poly (chlorotri-fluorotetrafluoroethylene); PCTFE), vinylidene fluoride-tetrafluoro ethylene polymer (vinylidene fluoride-tetrafluoroethylene copolymer); VF-2-TFE), polyvinylidene fluoride (poly (vinylidene fluoride)), tetrafluoroethene-perfluor dioxole copolymer (tetrafluoroethylene-perfluorodioxole copolymers), vinylidene difluoride-hexafluoropropylene copolymer (vinylidenefluoride-hexafluoropropylene copolymer), vinylidene fluoride-hexafluoropropylene-tetrafluoroethene trimer (vinylidene fluoride-hexafluoropropylene-tetrafluoroethylene terpolymer), and tetrafluoroethene-perfluoro methyl vinyl ether (tetrafluoroethylene-perfluoromethylvinylether) adds the monomer trimer (cure site monomer terpolymer) in curing territory etc.
Heat filling can be selected nitride (nitride) or oxide (oxide) for use.Nitride comprises zirconium nitride (zirconiumnitride; ZrN), boron nitride (Boron nitride; BN), aluminium nitride (Aluminum nitride; AlN), silicon nitride (Siliconnitride; SiN).Oxide comprises aluminium oxide (Aluminum oxide; Al
2O
3), magnesium oxide (Magnesium oxide; MgO), zinc oxide (Zinc oxide; ZnO), titanium dioxide (Titaninum dioxide; TiO
2) etc.
In addition, if be applied to the high power luminous element of LED, the described the first metal layer 21 of carrying LED element 10 can adopt copper, and must produce the interlock circuit of LED element, and second metal level 22 of bottom then can adopt copper, aluminium or its alloy.
Heat radiation substrate of the present invention, not only have high-heat conductive efficency, characteristic such as high voltage withstanding, high temperature resistant, more possess high-tensile strength intensity and flexibility, and be applied to present illuminating led module heat radiation, even can be used for the application of collapsible heat radiations such as notebook, mobile phone.
Technology contents of the present invention and technical characterstic disclose as above, yet the those skilled in the art still may be based on teaching of the present invention and announcement and done all replacement and modifications that does not deviate from spirit of the present invention.Therefore, protection scope of the present invention should be not limited to the content that embodiment discloses, and should comprise various do not deviate from replacement of the present invention and modifications, and is contained by appending claims.
Claims (14)
- One kind the heat radiation substrate, comprise:One the first metal layer, surface thereof carrying electronic component;One second metal level; AndOne heat-conducting polymer dielectric insulation material layer is stacked between the described the first metal layer and second metal level and forms physics contact, and the conductive coefficient of described heat-conducting polymer dielectric insulation material layer is greater than 1W/mK, and thickness is less than 0.5mm, and comprises:A. fluoro containing polymers polymer, its fusing point is higher than 220 ℃, and percent by volume is between 30-60%; AndB. heat filling intersperse among in the described fluoro containing polymers polymer, and its percent by volume is between 40-70%;Described heat radiation substrate can be by the proof voltage test of 5KV, be 1cm wide heat radiation substrate surface non-cracking or slight crack generation when song becomes the cylinder of 5mm diameter, described heat radiation substrate places 260 ℃ tin stove 5 minutes, surface nothing foaming and outward appearance are unusual, and the tension intensity of described heat-conducting polymer dielectric insulation material layer and described first and second metal interlevel is greater than 8N/cm.
- 2. heat radiation substrate as claimed in claim 1, the interface that it is characterized in that described heat-conducting polymer dielectric insulation material layer and described first and second metal levels comprises at least one roughness Rz greater than 7.0 slightly rough surface, described slightly rough surface comprises a plurality of warty protrusions, and the particle diameter of described warty protrusion mainly is distributed between 0.1 to 100 micron.
- 3. heat radiation substrate as claimed in claim 1, the thickness that it is characterized in that described the first metal layer is less than 0.1mm.
- 4. heat radiation substrate as claimed in claim 1 is characterized in that described second metal layer thickness is less than 0.2mm.
- 5. heat radiation substrate as claimed in claim 1, the percent by volume that it is characterized in that described heat filling is between 50-65%.
- 6. heat radiation substrate as claimed in claim 1 is characterized in that described fluoro containing polymers polymer is selected from polyvinylidene fluoride or ethylene-tetrafluoroethylene copolymer.
- 7. heat radiation substrate as claimed in claim 1 is characterized in that described fluoro containing polymers polymer is selected from polytetrafluoroethylene, tetrafluoraoethylene-hexafluoropropylene copolymer, ethylene-tetrafluoroethylene copolymer, perfluor alcoxyl upgrading tetrafluoroethene, poly-(chlorine three-fluorine tetrafluoroethene), vinylidene fluoride-tetrafluoro ethylene polymer, polyvinylidene fluoride, tetrafluoroethene-perfluor dioxole copolymer, vinylidene difluoride-hexafluoropropylene copolymer, vinylidene fluoride-hexafluoropropylene-tetrafluoroethene trimer, and tetrafluoroethene-perfluoro methyl vinyl ether adds the monomer trimer that solidifies the territory.
- 8. heat radiation substrate as claimed in claim 1 is characterized in that described heat filling is selected from nitride or oxide.
- 9. heat radiation substrate as claimed in claim 8 is characterized in that described nitride is selected from zirconium nitride, boron nitride, aluminium nitride, silicon nitride.
- 10. heat radiation substrate as claimed in claim 8 is characterized in that described oxide is selected from aluminium oxide, magnesium oxide, zinc oxide, titanium dioxide.
- 11. heat radiation substrate as claimed in claim 1 is characterized in that the radiation exposure of process≤20Mrad solidifies described heat-conducting polymer dielectric insulation material layer interlinkage.
- 12. heat radiation substrate as claimed in claim 1 is characterized in that described electronic component is a light-emitting diode.
- 13. heat radiation substrate as claimed in claim 1 is characterized in that described the first metal layer comprises copper.
- 14. heat radiation substrate as claimed in claim 1 is characterized in that described second metal level comprises aluminium.
Priority Applications (1)
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|---|---|---|---|
| CN2006101286942A CN101140915B (en) | 2006-09-08 | 2006-09-08 | Heat radiation substrate |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2006101286942A CN101140915B (en) | 2006-09-08 | 2006-09-08 | Heat radiation substrate |
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|---|---|
| CN101140915A CN101140915A (en) | 2008-03-12 |
| CN101140915B true CN101140915B (en) | 2011-03-23 |
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| JP4842294B2 (en) | 2008-04-30 | 2011-12-21 | 日東電工株式会社 | Porous sheet, method for producing the same, and heat insulating sheet |
| WO2010055878A1 (en) * | 2008-11-12 | 2010-05-20 | 日東電工株式会社 | Method for producing insulating thermally conductive sheet, insulating thermally conductive sheet and heat dissipating member |
| US9496227B2 (en) | 2009-07-15 | 2016-11-15 | Qualcomm Incorporated | Semiconductor-on-insulator with back side support layer |
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| US9466719B2 (en) | 2009-07-15 | 2016-10-11 | Qualcomm Incorporated | Semiconductor-on-insulator with back side strain topology |
| EP2937898A1 (en) * | 2009-07-15 | 2015-10-28 | Silanna Semiconductor U.S.A., Inc. | Semiconductor-on-insulator with backside heat dissipation |
| CN102054806B (en) * | 2009-11-11 | 2013-01-02 | 台虹科技股份有限公司 | Thermal conductive substrate and manufacturing method thereof |
| TWI501428B (en) * | 2011-01-14 | 2015-09-21 | Lextar Electronics Corp | Light emitting diode package structure |
| CN102390146B (en) * | 2011-06-23 | 2014-02-12 | 蔡州 | Manufacture method of heat transfer layer and heat-radiating layer arranged on surface of heat-radiating object, and heat-radiating layer structure |
| CN104040712A (en) * | 2011-12-22 | 2014-09-10 | 日东电工株式会社 | Semiconductor device, optical semiconductor device, and heat-dissipating member |
| CN102943969A (en) * | 2012-11-21 | 2013-02-27 | 深圳华瀚新能源材料有限公司 | Light-emitting diode (LED) lamp using heat conduction high-polymer material for heat dissipation |
| CN103413791A (en) * | 2013-08-22 | 2013-11-27 | 广州天极电子科技有限公司 | Ceramic copper-coated film heat sink module with good heat dissipation efficiency and manufacturing method thereof |
| CN103594434B (en) * | 2013-10-23 | 2017-12-29 | 广东明路电力电子有限公司 | power component with composite radiating layer |
| US9515181B2 (en) | 2014-08-06 | 2016-12-06 | Qualcomm Incorporated | Semiconductor device with self-aligned back side features |
| CN105161595B (en) * | 2015-08-07 | 2018-06-19 | 佛山市雄飞光电有限公司 | Large-power light-emitting diodes |
| DE102015114645B4 (en) | 2015-09-02 | 2023-03-23 | Infineon Technologies Ag | SMART CARD, DEVICE AND METHOD |
| KR102609888B1 (en) * | 2018-01-04 | 2023-12-05 | 엘지이노텍 주식회사 | Heat dissipation board |
| CN108847450A (en) * | 2018-06-12 | 2018-11-20 | 武汉华星光电半导体显示技术有限公司 | A kind of substrate of Organic Light Emitting Diode and preparation method thereof |
| CN115605009B (en) * | 2022-12-14 | 2023-05-16 | 荣耀终端有限公司 | Middle frame, electronic equipment and preparation method of middle frame |
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