CN101093849A - 具有多个发光元件的发光装置 - Google Patents
具有多个发光元件的发光装置 Download PDFInfo
- Publication number
- CN101093849A CN101093849A CNA2007101029609A CN200710102960A CN101093849A CN 101093849 A CN101093849 A CN 101093849A CN A2007101029609 A CNA2007101029609 A CN A2007101029609A CN 200710102960 A CN200710102960 A CN 200710102960A CN 101093849 A CN101093849 A CN 101093849A
- Authority
- CN
- China
- Prior art keywords
- electrode
- led
- led1
- row
- light
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission
- H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission in a repetitive configuration, e.g. LED bars
- H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission
- H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission in a repetitive configuration, e.g. LED bars
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/08—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of group III and group V of the periodic system
- H01L33/32—Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/40—Materials therefor
- H01L33/42—Transparent materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
- H01L2224/23—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process
- H01L2224/24—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process of an individual high density interconnect connector
Abstract
一种在高驱动电压和低驱动电流下工作的发光装置。在蓝宝石等绝缘基板(10)上,以二维单片式形成多个LED(1),将多个LED(1)串联连接成为LED阵列。2组LED阵列以相反极性连接到电极(32)。LED(1)之间及LED(1)与电极(32)之间为架空桥式布线(28)。通过曲折状配置LED阵列,形成多个LED(1),获得高驱动电压和低驱动电流。由于2个LED阵列极性相反,因此电源可以使用交流电源。
Description
本申请是申请号为03820622.6(PCT/JP2003/010922)的母案的分案申请,该母案的申请日为2003年8月28日。
技术领域
本发明涉及一种在基板上形成有多个发光元件的发光装置。
背景技术
在发光元件(LED)等发光单元被用于显示用途等的情况下,其使用条件为:驱动电压约1~4V,驱动电流约20mA。然而,近年来开发出了使用GaN系化合物半导体的短波长LED,随着全彩色和白色等固体光源的实用化,逐渐出现了将LED用于照明用途的探讨研究。将LED用于照明用途时,所出现的问题是,其使用条件不同于上述驱动电压约1~4V、驱动电流约20mA那样的使用条件。因此,需要致力于使LED具有更大的电流,增大发光输出。为了产生大电流,需要增大LED的pn结面积,控制电流密度,使其变小。
将LED作为照明光源使用时,使用交流电作为电源,能够在100V以上的驱动电压下使用,非常方便。另外,如果投入相同的电力可以获得相同的发光输出,则保持低电流值的同时施加高电压可以减小电力损失。但是,现有的LED中,不能充分提高驱动电压。
发明内容
本发明的目的在于提供能够在高驱动电压下进行工作的发光装置。
本发明的特征在于,绝缘基板上形成多个GaN系发光元件,上述多个发光元件单片式串联连接。
这里,最好是上述多个发光元件在上述基板上呈二维配置。
另外,可以将上述多个发光元件分为2组,并联连接以使2个电极相互极性相反。
上述多个发光元件之间的连接可以使用架空桥式(air-bridge)布线。
上述多个发光元件之间的电分离可以利用作为上述基板使用的蓝宝石来进行。
另外,可以将上述多个发光元件分为数量相同的2组,各组发光元件阵列配置为曲折状,并且,2组发光元件阵列并联连接以使2个电极相互极性相反,也可以将上述2组发光元件阵列配置为互不相同。
另外,上述发光元件和电极的平面形状可以是近似正方形或三角形。
另外,上述多个发光元件和电极也可以配置为整体形状近似正方形。
在本发明中,电极可以是交流电源用电极。
另外,上述2组发光元件阵列也可以具有共同的n电极。
在本发明中,多个发光元件形成为单片式,即形成在同一基板上,通过将它们串联连接,就可以获得高驱动电压。将多个发光元件连接于一个方向使直流驱动成为可能,但也可以将多个发光元件分为2组连接到电极,使各组发光元件(发光元件阵列)成为极性相反,以此使交流驱动也成为可能。各组数量可以相等,也可以不相等。
二维配置多个发光元件的方法有多种,但最好是使基板专用面积尽可能小。例如,将2组发光元件阵列分别配置为曲折状,即将多个发光元件配置于曲折的直线上,各个发光元件阵列配置得互不相同,由此可以有效地利用基板面积,连接多个发光元件。将2组发光元件阵列配置得互不相同,会产生布线的交叉部分,但是通过在发光元件之间使用架空桥式布线进行连接,就可以有效地防止交叉部分的短路。发光元件和电极的形状可以是任意的,例如可以使用标准的安装结构,平面形状采用近似正方形从而整体形状也呈近似正方形。除了正方形之外,发光元件和电极在例如呈三角形时,如果对这些三角形状进行组合从而使整体形成近似正方形,同样也能够使用标准的安装结构。
附图说明
图1是发光元件(LED)的基本结构图。
图2是发光装置的等效电路图。
图3是2个LED的平面图。
图4是图3的IV-IV剖视图。
图5是发光装置的另一等效电路图。
图6是二维排列40个LED的说明图。
图7是图6的电路图。
图8是二维排列6个LED的说明图。
图9是图8的电路图。
图10是二维排列14个LED的说明图。
图11是图10的电路图。
图12是二维排列6个LED的说明图。
图13是图12的电路图。
图14是二维排列16个LED的说明图。
图15是图14的电路图。
图16是排列2个LED的说明图。
图17是图16的电路图。
图18是二维排列4个LED的说明图。
图19是图18的电路图。
图20是二维排列3个LED的说明图。
图21是图20的电路图。
图22是二维排列6个LED的说明图。
图23是图22的电路图。
图24是二维排列5个LED的说明图。
图25是图24的电路图。
图26是另一个二维配置说明图。
图27是图26的电路图。
图28是另一个二维配置说明图。
图29是图28的电路图。
图30是另一个二维配置说明图。
图31是图30的电路图。
具体实施方式
下面根据附图说明本发明的实施方式。
图1中表示了本实施方式中用作GaN系化合物半导体发光元件的LED1的基本结构。LED1的结构是:在基板10上依次层叠GaN层12、掺杂Si的n型GaN层14、InGaN发光层16、AlGaN层18、p型GaN层20,接触p型GaN层20形成p电极22,接触n型GaN层14形成n电极24。
图1所示的LED通过以下工艺过程制作。即,首先,利用MOCVD装置在氢气环境中以1100℃对蓝宝石c面基板进行10分钟热处理。然后,使温度降至500℃,供给100秒钟的硅烷气体和氨气,在基板10上形成不连续的SiN膜。此外,该工艺过程是用来减小设备中的位错密度,图中省略了SiN膜的表示。其次,以相同温度供给三甲基镓和氨气,使GaN层成长至20nm厚度。将温度升至1050℃,再次供给三甲基镓和氨气,使无掺杂GaN(u-GaN)层12和掺杂Si的n型GaN层14分别成长为2μm厚度。然后,使温度降至700℃左右,使InGaN发光层16成长为2nm厚度。目标组分是x=0.15,即In0.15Ga0.85N。发光层16成长后,将温度升至1000℃,使AlGaN空穴注入层18成长,进而使p型GaN层20成长。
在使p型GaN层20成长后,从MOCVD装置中取出晶片,利用真空蒸镀在成长层表面依次形成10nm厚的Ni和10nm厚的Au。在含有5%的氧的氮气环境中,通过520℃热处理,使金属膜成为p型透明电极22。形成透明电极后,全面涂敷光致抗蚀剂,以光致抗蚀剂作为掩模,进行用于形成n型电极的刻蚀。刻蚀深度为例如600nm左右。在经刻蚀而露出的n型GaN层14上,形成5nm厚的Ti和5nm厚的Al,在氮气环境中以450℃进行30分钟热处理,形成n型电极24。最后,研磨基板10的背面至100μm,将芯片切出,通过安装获得LED1。
图1中,在基板10上形成1个GaN系LED1,但在本实施方式中,在基板10上以二维阵列状单片式(monolithic)形成多个LED1,连接各个LED从而构成发光装置(芯片)。这里,所谓的“单片”是指在1个基板上形成了全部元件。
图2表示了发光装置的等效电路图。在图2中,2维阵列状形成的发光元件群分成数量相同(图中是4个)的2组,各组的LED1分别串联连接,2组LED列并联连接以使对于电极(驱动电极)极性相反。依照此种LED列串联连接方式,能够以各个驱动电压相加的高电压来驱动LED1。另外,由于各LED列并联连接到电极以使其极性相互相反,所以即使在使用交流电源作为电源的情况下,因为在电源的各个周期中必定有某一方的LED列发光,所以能够实现高效发光。
图3中表示了基板10上以单片式形成的多个LED的部分平面图。另外,图4表示图3的IV-IV剖视图。在图3中,在LED1上面如图1所示形成有p电极22和n电极24。邻接的LED1的p电极22和n电极24之间,通过架空桥式布线2 8相连,多个LED1串联连接。
在图4中,为方便说明,简化表示了各个LED1。即,仅示出了n-GaN层14、p-GaN层20、p-电极22、n-电极24。实际上如图1所示,还有InGaN发光层16等。架空桥式布线28经由空中从p电极22连接到n电极24。由此,与在元件表面涂敷绝缘膜,再在其上形成电极并电连接p电极22和n电极24的方法相比,因为无需沿着刻蚀沟配置电极,所以可以避免布线断线以及构成绝缘材料的元素从绝缘膜热扩散到n层、p层导致LED1变坏的问题。架空桥式布线28不仅在LED1之间,也可以用于LED1与图中未示出的电极之间的连接。
另外,如图4所示,各LED1需要相互独立,电绝缘。因此,各LED1在蓝宝石基板10上被分离开来。因为蓝宝石自身是绝缘体,所以能够使LED1分别电分离。依照此种方式,通过用蓝宝石基板10作为进行LED的电分离的电阻体,就能够简单可靠地实现LED的电分离。
此外,作为发光元件,除了具有pn结的LED之外,也可以使用MIS。
图5表示了发光装置的另一等效电路图。在图中,20个LED1串联连接形成1个LED阵列,2个LED阵列(共计40个LED)并联连接到电源。LED1的驱动电压设定为5V,各LED阵列的驱动电压为100V。2个LED阵列与图2同样并联连接到电源以使极性互相相反,使得无论电源极性如何,均有一个LED阵列发光。
图6中具体表示了二维阵列。是对应于图2的等效电路图。在图中,蓝宝石基板10上形成了共计40个LED1,分为分别为20个的2组,通过架空桥式布线28串联连接,形成2个LED阵列。更详细来说,各LED1均为形状相同的正方形大小相等,1个LED阵列从上面起分别以6个、7个、7个配置于一直线上,从上数第1列(6个)和第2列(7个)成相反方向,第2列和第3列也成相反方向。第1列和第2列、第2列和第3列相互分离配置。即,这是因为如后所述,另一LED阵列的列交替插入。第1列右端的LED1和第2列右端的LED1通过架空桥式布线28相连。第2列左端的LED1和第3列左端的LED1也通过架空桥式布线28相连,呈曲折排列。第1列左端的LED1通过架空桥式布线28连接到形成在基板10的左上部的电极(焊盘)32,第3列右端的LED1通过架空桥式布线28连接到形成在基板10的右下部的电极(焊盘)32。2个电极(焊盘)32也是与LED1相同形状的正方形。另一LED阵列形成为与上述一个LED阵列的间隙互不相同。即,另一LED阵列从上面起分别以7个、7个、6个配置于一直线上,从上数第1列形成于一个LED阵列的第1列和第2列之间,第2列形成于一个LED阵列的第2列和第3列之间,第3列形成于一个LED阵列的第3列的下方。另一LED阵列的第1列和第2列,以及第2列和第3列也形成为互反方向,第1列右端的LED1和第2列右端的LED1通过架空桥式布线28相连,第2列左端的LED1和第3列左端的LED1也通过架空桥式布线2 8相连为曲折状。另一LED阵列的第1列左端的LED通过架空桥式布线28连接到形成在基板10的左上部的电极32,第3列右端的LED1通过架空桥式布线28连接到形成在基板10的右下部的电极32。一个LED阵列与另一LED阵列对于电极32的极性相反。发光装置(芯片)的整体形状为长方形。被提供有电源的2个电极32位于长方形的对角位置而分开形成,此点应予注意。
图7中表示了图6的电路图。很明显,各个LED阵列弯曲为曲折状串联连接,2个LED阵列中呈曲折状的各列形成于相互各行之间。利用这种配置,可以将多个LED1配置在较小基板10上。另外,对于40个LED1,电极32有2个即可,因此这一点也可以提高基板10的使用效率。另外,为了隔离各个LED1而分别形成各个LED1时,需要切割晶片使其分离,对此,本实施方式中,由于可以通过刻蚀来分离各个LED1,所以能够使LED1的间隔变窄。由此,能够使蓝宝石基板10变得更小。各个LED1彼此的分离是通过同时使用光致抗蚀剂或反应性离子刻蚀、湿式刻蚀,刻蚀去除LED1之外的区域直至达到基板10而实现的。由于各LED阵列交替发光,所以能够提高发光效率并提高散热特性。另外,如果改变串联连接的LED1的数量,也可以改变整体的驱动电压。另外,如果减小LED1的面积,就能够提高每个LED的驱动电压。在串联连接20个LED1时,如果用商用电源(100V、60Hz)驱动,就能够获得大约150mW的发光输出。这种情况下的驱动电流为20mA左右。
此外,由图7可知,在将2个LED阵列交替排列为曲折状时,必定会与架空桥式布线28产生交叉部分34。例如,连接另一LED阵列的第1列和第2列时,会与用于连接一个LED阵列的第1列和第2列的布线部分交叉。但是,本实施方式的架空桥式布线28不像上述那样与基板10接触,而是离开基板10从空中通过,所以能够很容易地避免架空桥式布线28之间在交叉部分34接触造成短路。这是使用架空桥式布线28的优点之一。架空桥式布线28例如以如下方式形成。即,全面涂敷2μm厚的光致抗蚀剂,在打开架空桥式布线形状的空洞后,进行坚膜处理(post bake)。利用真空蒸镀在其上依次蒸镀10nm的Ti、10nm的Au。再在其上再次全面涂敷2μm厚的光致抗蚀剂,只在欲形成架空桥式布线的部分开孔。接着,以Ti和Au作为电极,在电解液中利用离子电镀法(电镀)在电极全面上附着3~5μm厚的Au。然后,将试料浸入丙酮,利用超声波洗净将光致抗蚀剂溶解去除,形成架空桥式布线28。
依照此种方式,通过将多个LED1配置为二维阵列状,可以有效活用基板面积,并能够以高驱动电压,特别是商用电源进行驱动,二维阵列的模式也可以使用其他各种模式。一般地,二维阵列模式最好具备以下条件。
(1)为了使各LED中电流一律相同从而获得一律相同的发光,各个LED的形状、电极位置最好是相同的。
(2)为了将晶片切割为芯片,各个LED的边最好是直线。
(3)为了提高光提取效率,使用标准的安装,利用来自周边的反射;为此,LED的平面形状最好是近似于正方形的形状。
(4)2个电极(焊接区)的大小最好是100μm见方左右,并相互分离。
(5)为了有效利用晶片面积,最好使布线、焊盘占小的比例。
当然,这些不是必须的,例如各个LED的形状也可以使用三角形的平面形状。即使各个LED的形状为三角形,通过将其组合,整体形状也可以呈近似正方形。下面说明二维阵列模式的若干实例。
图8中表示了将共计6个LED1二维配置的实例,图9表示了其电路图。图8的配置基本上与图6的配置相同,共计6个LED阵列等分为2组,分别由串联连接的3个LED构成。一个LED阵列配置为曲折状,从上数第1列形成1个LED1,第2列形成2个LED1。第1列LED和第2列的右端的LED1通过架空桥式布线28串联连接,第2列的2个LED1也通过架空桥式布线28串联连接。基板10的左上部和左下部形成有电极(焊盘)32,第1列的LED1通过架空桥式布线连接到左上部的电极32,第2列左端的LED1连接到左下部的电极32。另一个LED阵列也排列为曲折状,从上数第1列形成2个LED1,第2列形成1个LED1。另一个LED阵列的第1列形成于上述一个LED阵列的第1列和第2列之间,另一个LED阵列的第2列形成于上述一个LED阵列的第2列的下方。第1列右端的LED1通过架空桥式布线28串联连接到第2列的LED1,第1列的2个LED1彼此也通过架空桥式布线28串联连接。第1列左端的LED1通过架空桥式布线28连接到左上部的电极32,第2列的LED1通过架空桥式布线28连接到左下部的电极32。由图9可知,在此实例中也是2个LED阵列相互并联连接到电极32,并且连接成极性相反。因此,当供给交流电源时,2个LED阵列交替发光。
图10中表示了将共计14个LED二维配置的实例,图11表示了其电路图。共计14个LED阵列分为2组,分别由串联连接的7个LED构成。一个LED阵列配置为曲折状,从上数第1列形成3个LED1,第2列形成4个LED1。第1列左端的LED和第2列左端的LED1通过架空桥式布线28串联连接,第1列的3个LED1彼此以及第2列的4个LED1彼此也通过架空桥式布线28串联连接。基板10的右上部和右下部形成有电极(焊盘)32,第1列右端的LED1通过架空桥式布线连接到右上部的电极32,第2列右端的LED1连接到右下部的电极32。另一个LED阵列也排列为曲折状,从上数第1列形成4个LED1,第2列形成3个LED1。另一个LED阵列的第1列形成于上述一个LED阵列的第1列和第2列之间,另一个LED阵列的第2列形成于上述一个LED阵列的第2列的下方。第1列左端的LED1通过架空桥式布线28串联连接到第2列左端的LED1。第1列的4个LED1彼此以及第2列的3个LED1彼此也串联连接。第1列右端的LED1通过架空桥式布线28连接到右上部的电极32,第2列右端的LED1通过架空桥式布线28连接到右下部的电极32。由图11可知,在此实例中也是2个LED阵列相互并联连接到电极32,并且连接成极性相反。因此,当供给交流电源时,2个LED阵列交替发光。
图6、图8、图10的二维模式的共同特点是,各个LED1具有近似正方形的相同形状、相同大小;2个电极(焊盘)也是近似正方形,不形成邻接(形成分离);2个LED阵列形成组合;2个LED阵列形成弯曲并且在芯片上互相交错;2个LED阵列连接到电极以形成相反极性等等。
图12中表示了将平面形状为三角形的LED二维排列时的实例,图13表示了其电路图。在图12中,LED1a、1b、1c、1d、1e、1f共计6个形成为三角形平面形状。LED1a与LED1e配置成在三角形的一边互相面对且2者成近似正方形;LED1b与1f配置成互相面对且2者形成近似正方形。另外,LED1d与电极32互相面对连接,LED1c与电极32互相面对连接。2个电极32也与LED同样呈三角形平面形状,同样配置为近似正方形。LED彼此面对的边构成n电极24,即,相对的2个LED共享n电极24。LED与电极32也是n电极连接。该配置也如上述实例同样地将共计6个LED分为2组。一个LED阵列由LED1a、LED1b、LED1c构成,LED1a的p电极22通过架空桥式布线28连接到电极32,其n电极2 4通过架空桥式布线28与LED1b的p电极22连接。LED1b的n电极24通过架空桥式布线28与LED1c的p电极22连接。LED1c的n电极24连接到电极32。另一个LED阵列由LED1d、LED1e、LED1f构成,电极32与LED1f的p电极22通过架空桥式布线28相连,LED1f的n电极24与LED1e的p电极22通过架空桥式布线28相连,LED1e的n电极24与LED1d的p电极22通过架空桥式布线28相连,LED1d的n电极24连接到电极32。
在图13中,构成一个LED阵列的LED1a与构成另一个LED阵列的LED1e的n电极相连,构成一个LED阵列的LED1b与构成另一个LED阵列的LED1f的n电极相连,这一点也请注意。通过共享2组LED阵列的若干个n电极,能够减少电路布线。另外,在该实例中,也是将2个LED阵列并联连接到电极32,并且连接成极性相反。另外,各个LED形状、大小相同,将各个LED以一边相对置,同时使电极32为三角形,就能够以高密度形成LED和电极,减小所需要的基板面积。
图14中表示了将平面形状为三角形的LED二维排列的另一实例,图1 5表示了其电路图。在该实例中,将LED1a~1r共计16个形成为二维。LED1a与1j、1b和1k、1c和1m、1d和1n、1e和1p、1f和1q、1g和1r分别在三角形的一边上相互面对。相对的边上共同形成有n电极24。另外,LED1i与电极32相互面对,LED1h与电极32相互面对。一方的LED阵列由LED1a、1b、1c、1d、1e、1f、1g、1h构成,另一方的LED阵列由LED1r、1q、1p、1n、1m、1k、1j、1i构成。LED1b的n电极24通过架空桥式布线28与LED1c的p电极22相连,LED1e的n电极24也通过架空桥式布线28与LED1f的p电极22相连。另外,LED1q的n电极2 4也通过架空桥式布线28与LED1p的p电极22相连,LED1m的n电极24也通过架空桥式布线28与LED1k的p电极22相连。在图14中也会产生与图12同样的交叉部分,但能够通过架空桥式布线28避免短路。另外,在本实例中,也是通过共享2组LED阵列的若干个n电极24的结构来减少所需的布线。另外,在该实例中也是2个LED阵列并联,以互相相反极性连接到电极32,交流驱动成为可能。在图1 2中表示了共计6个LED的情况,在图14中表示了共计16个LED的情况,其他个数的LED也可以进行同样的二位排列。本申请的申请人制作出了将38个LED二维排列的发光装置。
以上说明了交流驱动的情况,当然也可以是直流驱动。在这种情况下,LED阵列不是以相反极性连接到电极,而是可以按照直流电源的极性方向,顺向连接LED阵列。通过串联连接多个LED,能够以高电压驱动。以下说明直流驱动的情况。
图16中表示了将2个LED串联连接的实例,图17表示了其电路图。各个LED1的平面形状为矩形,2个LED之间通过架空桥式布线28相连。电极32形成于各个LED1的附近,利用电极32和LED1形成长方形的区域。即,电极32占用长方形区域的一部分,在长方形区域的其他区域中形成LED1。
图18中表示了将共计4个LED二维排列的实例,图19表示了其电路图。将图16的LED1分割为2个,将各个并联连接。由2个LED构成的LED阵列可以2组并联地顺向连接。用LED1a与1b构成1个LED阵列,用LED1c和1d构成另一个LED阵列。LED1a和LED1c共享p电极22和n电极24,LED1b和LED1d共享p电极22和n电极24。利用这种结构,与图16相比,具有使电流均匀的效果。
图20表示了将共计3个LED二维排列的实例,图21表示了其电路图。LED1a、1b、1c形状不同,在LED1a的一部分形成有电极32。LED1a的n电极24与LED1b的p电极通过跨在LED1b之上的架空桥式布线28相连。通过对各LED的形状和配置进行规划,即使是3个LED也可以使发光装置(芯片)整体的外观形状呈近似正方形。
图22中表示了将共计6个LED二维排列的实例,图23表示了其电路图。各个LED1a~1f形状、大小相同。LED1a~1f串联连接。LED1a~1c配置于直线上,LED1d~1f配置于另一直线上。LED1c与LED1d通过架空桥式布线28相连。在该实例中,也可以使芯片的整体形状呈近似正方形。
图24中表示了将共计5个LED二维排列的实例,图25表示了其电路图。LED1a~1e形状(长方形)、大小相同。在该实例中,也可以使整体形状呈近似正方形。
以上说明了本发明的实施方式,本发明并不限定于此,而是可以进行各种变化。特别是在将多个发光元件(LED等)二维配置时,模式可以是上述模式之外。在此情况下,适合于使邻接发光元件之间共享电极从而减少布线、将整体形状取为正方形或长方形、将多组发光元件阵列并联连接到电极、交流驱动时多组发光元件阵列置为互相相反极性、将多组发光元件阵列分别以曲折状组合,等等。
图26~图31中,表示了这些变形例的若干个实例。图26是交流驱动时的二维配置,配置有共计40个LED。图27是其电路图。与图6不同的是,2组LED阵列的若干个共享n电极24(参照图5)。例如,位于一个LED阵列第1列的从右端数第2位置处的LED(图中以α表示)的n电极24,与位于另一个LED阵列第1列的右端的LED(图中以β表示)的n电极24是共享的。此外,LED阵列的端部(图中γ部分)的架空桥式布线28不交叉,而是共同形成的。
图28是交流驱动时的二维配置,配置有共计14个LED。图29是其电路图。与图10不同的是,2组LED阵列的若干个共享n电极24。例如,位于一个LED阵列第1列的左端的LED(图中以α表示)的n电极24,与位于另一个LED阵列第1列的从右端数第2位置处的LED(图中以β表示)的n电极24是共享的。另外,端部(图中γ部分)的架空桥式布线28共同形成。
图30是交流驱动时的二维配置,配置有共计6个LED。图31是其电路图。在该实例中,端部(γ部)的架空桥式布线28也是共同形成的。该结构也可以使一个LED阵列的n电极24与另一个LED阵列的n电极24共享。
Claims (1)
1.一种发光装置,在绝缘基板上形成多个GaN系发光二级管元件,其特征在于,
上述多个发光二级管元件在上述绝缘基板上呈二维配置,
上述多个发光二级管元件分为数量相同的第1组和第2组,第1组和第2组分别互不相同地配置成曲折状,第1组和第2组并联连接以使2个交流电源用电极相互极性相反。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP249957/2002 | 2002-08-29 | ||
JP2002249957A JP3822545B2 (ja) | 2002-04-12 | 2002-08-29 | 発光装置 |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB038206226A Division CN100421266C (zh) | 2002-08-29 | 2003-08-28 | 具有多个发光元件的发光装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN101093849A true CN101093849A (zh) | 2007-12-26 |
CN100570883C CN100570883C (zh) | 2009-12-16 |
Family
ID=31972605
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB2007101029609A Expired - Lifetime CN100570883C (zh) | 2002-08-29 | 2003-08-28 | 具有多个发光元件的发光装置 |
CNB038206226A Expired - Lifetime CN100421266C (zh) | 2002-08-29 | 2003-08-28 | 具有多个发光元件的发光装置 |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB038206226A Expired - Lifetime CN100421266C (zh) | 2002-08-29 | 2003-08-28 | 具有多个发光元件的发光装置 |
Country Status (10)
Country | Link |
---|---|
US (17) | US7417259B2 (zh) |
EP (10) | EP1553641B1 (zh) |
KR (1) | KR100697803B1 (zh) |
CN (2) | CN100570883C (zh) |
AT (1) | ATE500616T1 (zh) |
DE (1) | DE60336252D1 (zh) |
ES (1) | ES2362407T3 (zh) |
RU (1) | RU2295174C2 (zh) |
TW (1) | TWI280672B (zh) |
WO (1) | WO2004023568A1 (zh) |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102237350A (zh) * | 2010-04-20 | 2011-11-09 | 东芝照明技术株式会社 | 照明装置以及包括发光元件的发光装置 |
CN102315239A (zh) * | 2010-07-02 | 2012-01-11 | 晶元光电股份有限公司 | 光电元件 |
CN104425539A (zh) * | 2013-09-05 | 2015-03-18 | 亚世达科技股份有限公司 | 发光二极管单元及发光装置 |
CN104992938A (zh) * | 2015-07-20 | 2015-10-21 | 深圳市君和光电子有限公司 | 一种倒装集成led光源 |
US9324691B2 (en) | 2009-10-20 | 2016-04-26 | Epistar Corporation | Optoelectronic device |
CN107078096A (zh) * | 2014-09-22 | 2017-08-18 | 株式会社村田制作所 | 半导体装置 |
Families Citing this family (239)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP1553641B1 (en) | 2002-08-29 | 2011-03-02 | Seoul Semiconductor Co., Ltd. | Light-emitting device having light-emitting diodes |
US7213942B2 (en) * | 2002-10-24 | 2007-05-08 | Ac Led Lighting, L.L.C. | Light emitting diodes for high AC voltage operation and general lighting |
US6957899B2 (en) * | 2002-10-24 | 2005-10-25 | Hongxing Jiang | Light emitting diodes for high AC voltage operation and general lighting |
US7005679B2 (en) | 2003-05-01 | 2006-02-28 | Cree, Inc. | Multiple component solid state white light |
WO2005022654A2 (en) | 2003-08-28 | 2005-03-10 | Matsushita Electric Industrial Co.,Ltd. | Semiconductor light emitting device, light emitting module, lighting apparatus, display element and manufacturing method of semiconductor light emitting device |
US7915085B2 (en) | 2003-09-18 | 2011-03-29 | Cree, Inc. | Molded chip fabrication method |
TW200529464A (en) * | 2004-02-27 | 2005-09-01 | Super Nova Optoelectronics Corp | Gallium nitride based light-emitting diode structure and manufacturing method thereof |
JP4841550B2 (ja) * | 2004-06-30 | 2011-12-21 | ソウル オプト デバイス カンパニー リミテッド | 発光素子及びその製造方法並びにこれを用いた発光装置 |
TW200501464A (en) * | 2004-08-31 | 2005-01-01 | Ind Tech Res Inst | LED chip structure with AC loop |
JP3802910B2 (ja) | 2004-09-13 | 2006-08-02 | ローム株式会社 | 半導体発光装置 |
KR101216938B1 (ko) | 2004-10-28 | 2012-12-31 | 서울반도체 주식회사 | 다수의 셀이 결합된 발광 소자 및 이의 제조 방법 및 이를이용한 발광 장치 |
US8981876B2 (en) | 2004-11-15 | 2015-03-17 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Piezoelectric resonator structures and electrical filters having frame elements |
TWI374553B (en) * | 2004-12-22 | 2012-10-11 | Panasonic Corp | Semiconductor light emitting device, illumination module, illumination apparatus, method for manufacturing semiconductor light emitting device, and method for manufacturing semiconductor light emitting element |
KR101274041B1 (ko) * | 2004-12-31 | 2013-06-12 | 서울반도체 주식회사 | 발광 장치 |
US7221044B2 (en) | 2005-01-21 | 2007-05-22 | Ac Led Lighting, L.L.C. | Heterogeneous integrated high voltage DC/AC light emitter |
US7525248B1 (en) | 2005-01-26 | 2009-04-28 | Ac Led Lighting, L.L.C. | Light emitting diode lamp |
KR101138944B1 (ko) | 2005-01-26 | 2012-04-25 | 서울옵토디바이스주식회사 | 직렬 연결된 복수개의 발광셀들을 갖는 발광 소자 및그것을 제조하는 방법 |
US7535028B2 (en) * | 2005-02-03 | 2009-05-19 | Ac Led Lighting, L.Lc. | Micro-LED based high voltage AC/DC indicator lamp |
KR101121726B1 (ko) | 2005-02-03 | 2012-03-23 | 서울반도체 주식회사 | 발광 장치 |
JP5192239B2 (ja) | 2005-02-04 | 2013-05-08 | ソウル オプト デバイス カンパニー リミテッド | 複数の発光セルを有する発光装置及びその製造方法 |
DE102005009060A1 (de) * | 2005-02-28 | 2006-09-07 | Osram Opto Semiconductors Gmbh | Modul mit strahlungsemittierenden Halbleiterkörpern |
DE102005055997A1 (de) * | 2005-05-02 | 2006-11-09 | Hieke, Bernhard | Homogene Lichtquelle |
US7474681B2 (en) * | 2005-05-13 | 2009-01-06 | Industrial Technology Research Institute | Alternating current light-emitting device |
TW200640045A (en) | 2005-05-13 | 2006-11-16 | Ind Tech Res Inst | Alternating current light-emitting device |
US8704241B2 (en) | 2005-05-13 | 2014-04-22 | Epistar Corporation | Light-emitting systems |
US8272757B1 (en) | 2005-06-03 | 2012-09-25 | Ac Led Lighting, L.L.C. | Light emitting diode lamp capable of high AC/DC voltage operation |
KR100691497B1 (ko) * | 2005-06-22 | 2007-03-09 | 서울옵토디바이스주식회사 | 발광 소자 및 이의 제조 방법 |
US8476648B2 (en) | 2005-06-22 | 2013-07-02 | Seoul Opto Device Co., Ltd. | Light emitting device and method of manufacturing the same |
CN101846249B (zh) | 2005-06-28 | 2013-01-16 | 首尔Opto仪器股份有限公司 | 用于交流电力操作的发光装置 |
US8896216B2 (en) | 2005-06-28 | 2014-11-25 | Seoul Viosys Co., Ltd. | Illumination system |
KR100599012B1 (ko) | 2005-06-29 | 2006-07-12 | 서울옵토디바이스주식회사 | 열전도성 기판을 갖는 발광 다이오드 및 그것을 제조하는방법 |
KR100616415B1 (ko) * | 2005-08-08 | 2006-08-29 | 서울옵토디바이스주식회사 | 교류형 발광소자 |
US8901575B2 (en) * | 2005-08-09 | 2014-12-02 | Seoul Viosys Co., Ltd. | AC light emitting diode and method for fabricating the same |
KR101156452B1 (ko) * | 2005-08-25 | 2012-06-13 | 서울옵토디바이스주식회사 | 다수의 셀이 결합된 발광 소자 |
CN100413071C (zh) * | 2005-09-21 | 2008-08-20 | 杭州士兰明芯科技有限公司 | 使用交流电源的发光二极管灯及其制造方法 |
KR101158071B1 (ko) * | 2005-09-28 | 2012-06-22 | 서울옵토디바이스주식회사 | 다수의 셀이 결합된 발광 소자 및 이의 제조 방법 |
EP1935038B1 (en) * | 2005-09-30 | 2017-07-26 | Seoul Viosys Co., Ltd | Light emitting device having vertically stacked light emitting diodes |
KR100721454B1 (ko) * | 2005-11-10 | 2007-05-23 | 서울옵토디바이스주식회사 | 광 결정 구조체를 갖는 교류용 발광소자 및 그것을제조하는 방법 |
TWI318466B (en) * | 2005-12-09 | 2009-12-11 | Ind Tech Res Inst | Ac_led single chip with three terminals |
KR101158073B1 (ko) * | 2005-12-13 | 2012-06-22 | 서울옵토디바이스주식회사 | 다수개의 발광 셀이 어레이된 발광 소자 |
TWI331406B (en) * | 2005-12-14 | 2010-10-01 | Advanced Optoelectronic Tech | Single chip with multi-led |
KR101055772B1 (ko) | 2005-12-15 | 2011-08-11 | 서울반도체 주식회사 | 발광장치 |
KR100652864B1 (ko) * | 2005-12-16 | 2006-12-04 | 서울옵토디바이스주식회사 | 개선된 투명전극 구조체를 갖는 교류용 발광 다이오드 |
KR20090009772A (ko) | 2005-12-22 | 2009-01-23 | 크리 엘이디 라이팅 솔루션즈, 인크. | 조명 장치 |
US7998761B2 (en) | 2006-01-09 | 2011-08-16 | Seoul Opto Device Co., Ltd. | Light emitting diode with ITO layer and method for fabricating the same |
KR100659373B1 (ko) | 2006-02-09 | 2006-12-19 | 서울옵토디바이스주식회사 | 패터닝된 발광다이오드용 기판 및 그것을 채택하는 발광다이오드 |
US8969908B2 (en) | 2006-04-04 | 2015-03-03 | Cree, Inc. | Uniform emission LED package |
JP2007281081A (ja) * | 2006-04-04 | 2007-10-25 | Rohm Co Ltd | 半導体発光装置 |
US9335006B2 (en) | 2006-04-18 | 2016-05-10 | Cree, Inc. | Saturated yellow phosphor converted LED and blue converted red LED |
US7821194B2 (en) | 2006-04-18 | 2010-10-26 | Cree, Inc. | Solid state lighting devices including light mixtures |
US8998444B2 (en) * | 2006-04-18 | 2015-04-07 | Cree, Inc. | Solid state lighting devices including light mixtures |
CN101128075B (zh) * | 2006-08-18 | 2011-01-26 | 财团法人工业技术研究院 | 发光装置 |
KR100765240B1 (ko) | 2006-09-30 | 2007-10-09 | 서울옵토디바이스주식회사 | 서로 다른 크기의 발광셀을 가지는 발광 다이오드 패키지및 이를 채용한 발광 소자 |
US7714348B2 (en) * | 2006-10-06 | 2010-05-11 | Ac-Led Lighting, L.L.C. | AC/DC light emitting diodes with integrated protection mechanism |
US10295147B2 (en) | 2006-11-09 | 2019-05-21 | Cree, Inc. | LED array and method for fabricating same |
US7897980B2 (en) * | 2006-11-09 | 2011-03-01 | Cree, Inc. | Expandable LED array interconnect |
KR100898585B1 (ko) * | 2006-11-16 | 2009-05-20 | 서울반도체 주식회사 | 다수의 셀이 결합된 발광 소자 및 그 제조 방법 |
KR100803162B1 (ko) * | 2006-11-20 | 2008-02-14 | 서울옵토디바이스주식회사 | 교류용 발광소자 |
US8338836B2 (en) * | 2006-11-21 | 2012-12-25 | Seoul Opto Device Co., Ltd. | Light emitting device for AC operation |
WO2008075797A1 (en) | 2006-12-18 | 2008-06-26 | Seoul Opto Device Co., Ltd. | Light emitting device having isolating insulative layer for isolating light emitting cells from each other and method of fabricating the same |
DE112007002696T5 (de) | 2006-12-26 | 2009-11-05 | Seoul Opto Device Co. Ltd., Ansan | Licht emittierende Vorrichtung |
CN101652861B (zh) * | 2007-01-22 | 2013-01-23 | 科锐公司 | 容错发光体、包含容错发光体的系统以及制造容错发光体的方法 |
US9024349B2 (en) | 2007-01-22 | 2015-05-05 | Cree, Inc. | Wafer level phosphor coating method and devices fabricated utilizing method |
JP2010517274A (ja) * | 2007-01-22 | 2010-05-20 | クリー レッド ライティング ソリューションズ、インコーポレイテッド | 外部で相互接続された発光素子のアレイを用いる照明デバイスとその製造方法 |
US20080198572A1 (en) | 2007-02-21 | 2008-08-21 | Medendorp Nicholas W | LED lighting systems including luminescent layers on remote reflectors |
WO2008111693A1 (en) * | 2007-03-13 | 2008-09-18 | Seoul Opto Device Co., Ltd. | Ac light emitting diode |
JP4753904B2 (ja) | 2007-03-15 | 2011-08-24 | シャープ株式会社 | 発光装置 |
KR100974923B1 (ko) * | 2007-03-19 | 2010-08-10 | 서울옵토디바이스주식회사 | 발광 다이오드 |
JP4474441B2 (ja) * | 2007-06-29 | 2010-06-02 | 株式会社沖データ | 発光パネル、表示装置及び光源装置 |
US7863635B2 (en) | 2007-08-07 | 2011-01-04 | Cree, Inc. | Semiconductor light emitting devices with applied wavelength conversion materials |
KR100889956B1 (ko) | 2007-09-27 | 2009-03-20 | 서울옵토디바이스주식회사 | 교류용 발광다이오드 |
TWI369777B (en) * | 2007-10-04 | 2012-08-01 | Young Lighting Technology Corp | Surface light source of backlight module in a flat panel display |
CN101409318B (zh) * | 2007-10-12 | 2010-06-09 | 台达电子工业股份有限公司 | 发光二极管芯片的制造方法 |
KR100928259B1 (ko) | 2007-10-15 | 2009-11-24 | 엘지전자 주식회사 | 발광 장치 및 그 제조방법 |
KR101423723B1 (ko) | 2007-10-29 | 2014-08-04 | 서울바이오시스 주식회사 | 발광 다이오드 패키지 |
US8637883B2 (en) | 2008-03-19 | 2014-01-28 | Cree, Inc. | Low index spacer layer in LED devices |
US8350461B2 (en) * | 2008-03-28 | 2013-01-08 | Cree, Inc. | Apparatus and methods for combining light emitters |
WO2009118941A1 (ja) | 2008-03-28 | 2009-10-01 | シャープ株式会社 | バックライトユニットおよび液晶表示装置 |
US8461613B2 (en) | 2008-05-27 | 2013-06-11 | Interlight Optotech Corporation | Light emitting device |
KR101495071B1 (ko) * | 2008-06-24 | 2015-02-25 | 삼성전자 주식회사 | 서브 마운트 및 이를 이용한 발광 장치, 상기 서브마운트의 제조 방법 및 이를 이용한 발광 장치의 제조 방법 |
KR101025972B1 (ko) | 2008-06-30 | 2011-03-30 | 삼성엘이디 주식회사 | 교류 구동 발광 장치 |
KR100956224B1 (ko) | 2008-06-30 | 2010-05-04 | 삼성엘이디 주식회사 | Led 구동회로 및 led 어레이 장치 |
US8058669B2 (en) | 2008-08-28 | 2011-11-15 | Taiwan Semiconductor Manufacturing Company, Ltd. | Light-emitting diode integration scheme |
JP5123269B2 (ja) | 2008-09-30 | 2013-01-23 | ソウル オプト デバイス カンパニー リミテッド | 発光素子及びその製造方法 |
WO2010044129A1 (ja) * | 2008-10-17 | 2010-04-22 | 国立大学法人北海道大学 | 半導体発光素子アレー、およびその製造方法 |
WO2010050694A2 (ko) * | 2008-10-29 | 2010-05-06 | 서울옵토디바이스주식회사 | 발광 다이오드 |
KR20100076083A (ko) | 2008-12-17 | 2010-07-06 | 서울반도체 주식회사 | 복수개의 발광셀들을 갖는 발광 다이오드 및 그것을 제조하는 방법 |
KR101017395B1 (ko) * | 2008-12-24 | 2011-02-28 | 서울옵토디바이스주식회사 | 복수개의 발광셀들을 갖는 발광 소자 및 그것을 제조하는 방법 |
KR101557362B1 (ko) * | 2008-12-31 | 2015-10-08 | 서울바이오시스 주식회사 | 복수개의 비극성 발광셀들을 갖는 발광 소자 및 그것을 제조하는 방법 |
KR101533817B1 (ko) | 2008-12-31 | 2015-07-09 | 서울바이오시스 주식회사 | 복수개의 비극성 발광셀들을 갖는 발광 소자 및 그것을 제조하는 방법 |
KR20100095666A (ko) | 2009-02-12 | 2010-09-01 | 서울반도체 주식회사 | 고전압 구동용 발광 다이오드 칩 및 그것을 갖는 발광 다이오드 패키지 |
US8333631B2 (en) * | 2009-02-19 | 2012-12-18 | Cree, Inc. | Methods for combining light emitting devices in a package and packages including combined light emitting devices |
US7967652B2 (en) | 2009-02-19 | 2011-06-28 | Cree, Inc. | Methods for combining light emitting devices in a package and packages including combined light emitting devices |
US7982409B2 (en) | 2009-02-26 | 2011-07-19 | Bridgelux, Inc. | Light sources utilizing segmented LEDs to compensate for manufacturing variations in the light output of individual segmented LEDs |
JP5283539B2 (ja) * | 2009-03-03 | 2013-09-04 | シャープ株式会社 | 発光装置、発光装置ユニット、および発光装置製造方法 |
US8106403B2 (en) * | 2009-03-04 | 2012-01-31 | Koninklijke Philips Electronics N.V. | III-nitride light emitting device incorporation boron |
KR20100107165A (ko) * | 2009-03-25 | 2010-10-05 | 삼성전기주식회사 | Led 조명장치 |
US8937327B2 (en) | 2009-03-31 | 2015-01-20 | Seoul Semiconductor Co., Ltd. | Light emitting device having plurality of light emitting cells and method of fabricating the same |
TWI470824B (zh) | 2009-04-09 | 2015-01-21 | Huga Optotech Inc | 電極結構及其發光元件 |
US8921876B2 (en) | 2009-06-02 | 2014-12-30 | Cree, Inc. | Lighting devices with discrete lumiphor-bearing regions within or on a surface of remote elements |
JP5336594B2 (ja) * | 2009-06-15 | 2013-11-06 | パナソニック株式会社 | 半導体発光装置、発光モジュール、および照明装置 |
US8558249B1 (en) | 2009-06-30 | 2013-10-15 | Applied Lighting Solutions, LLC | Rectifier structures for AC LED systems |
US7936135B2 (en) * | 2009-07-17 | 2011-05-03 | Bridgelux, Inc | Reconfigurable LED array and use in lighting system |
US20110037054A1 (en) * | 2009-08-17 | 2011-02-17 | Chan-Long Shieh | Amoled with cascaded oled structures |
US8324837B2 (en) * | 2009-08-18 | 2012-12-04 | Hung Lin | Parallel light-emitting circuit of parallel LED light-emitting device and circuit board thereof |
US20110049468A1 (en) * | 2009-08-25 | 2011-03-03 | Panasonic Corporation | Led and led display and illumination devices |
US8354680B2 (en) * | 2009-09-15 | 2013-01-15 | Seoul Opto Device Co., Ltd. | AC light emitting diode having full-wave light emitting cell and half-wave light emitting cell |
RU2573640C2 (ru) * | 2009-09-17 | 2016-01-27 | Конинклейке Филипс Электроникс Н.В. | Модуль источника света и светоизлучающее устройство |
CN102630288B (zh) | 2009-09-25 | 2015-09-09 | 科锐公司 | 具有低眩光和高亮度级均匀性的照明设备 |
KR20110041401A (ko) * | 2009-10-15 | 2011-04-21 | 샤프 가부시키가이샤 | 발광 장치 및 그 제조 방법 |
US8872214B2 (en) | 2009-10-19 | 2014-10-28 | Sharp Kabushiki Kaisha | Rod-like light-emitting device, method of manufacturing rod-like light-emitting device, backlight, illuminating device, and display device |
US9435493B2 (en) | 2009-10-27 | 2016-09-06 | Cree, Inc. | Hybrid reflector system for lighting device |
DE102009051129A1 (de) | 2009-10-28 | 2011-06-01 | Osram Opto Semiconductors Gmbh | Optoelektronisches Bauelement und Verfahren zum Herstellen eines optoelektronischen Bauelements |
WO2011071559A1 (en) * | 2009-12-09 | 2011-06-16 | Nano And Advanced Materials Institute Limited | Method for manufacturing a monolithic led micro-display on an active matrix panel using flip-chip technology and display apparatus having the monolithic led micro-display |
US9236532B2 (en) | 2009-12-14 | 2016-01-12 | Seoul Viosys Co., Ltd. | Light emitting diode having electrode pads |
US8511851B2 (en) | 2009-12-21 | 2013-08-20 | Cree, Inc. | High CRI adjustable color temperature lighting devices |
KR101106151B1 (ko) | 2009-12-31 | 2012-01-20 | 서울옵토디바이스주식회사 | 발광 소자 및 그것을 제조하는 방법 |
CN103474446B (zh) * | 2010-01-15 | 2017-03-01 | 晶元光电股份有限公司 | 发光二极管阵列结构及其制造方法 |
US9243316B2 (en) | 2010-01-22 | 2016-01-26 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Method of fabricating piezoelectric material with selected c-axis orientation |
US8796904B2 (en) | 2011-10-31 | 2014-08-05 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Bulk acoustic resonator comprising piezoelectric layer and inverse piezoelectric layer |
KR101601624B1 (ko) * | 2010-02-19 | 2016-03-09 | 삼성전자주식회사 | 멀티셀 어레이를 갖는 반도체 발광장치, 발광모듈 및 조명장치 |
US9275979B2 (en) | 2010-03-03 | 2016-03-01 | Cree, Inc. | Enhanced color rendering index emitter through phosphor separation |
KR101649267B1 (ko) | 2010-04-30 | 2016-08-18 | 서울바이오시스 주식회사 | 복수개의 발광셀들을 갖는 발광 다이오드 |
WO2011115361A2 (ko) * | 2010-03-15 | 2011-09-22 | 서울옵토디바이스주식회사 | 복수개의 발광셀들을 갖는 발광 장치 |
US8084775B2 (en) * | 2010-03-16 | 2011-12-27 | Bridgelux, Inc. | Light sources with serially connected LED segments including current blocking diodes |
JP2011199221A (ja) | 2010-03-24 | 2011-10-06 | Hitachi Cable Ltd | 発光ダイオード |
CN102214771A (zh) * | 2010-04-02 | 2011-10-12 | 菱生精密工业股份有限公司 | 导线架型式的预铸模成型多芯片承载模组 |
WO2011126248A2 (en) | 2010-04-06 | 2011-10-13 | Seoul Opto Device Co., Ltd. | Light emitting diode and method of fabricating the same |
CN102270626B (zh) | 2010-06-01 | 2013-12-25 | 展晶科技(深圳)有限公司 | 多晶封装发光二极管 |
US8684559B2 (en) | 2010-06-04 | 2014-04-01 | Cree, Inc. | Solid state light source emitting warm light with high CRI |
CA2802539A1 (en) | 2010-06-18 | 2011-12-22 | Glo Ab | Nanowire led structure and method for manufacturing the same |
CN102340904B (zh) | 2010-07-14 | 2015-06-17 | 通用电气公司 | 发光二极管驱动装置及其驱动方法 |
TWI557875B (zh) * | 2010-07-19 | 2016-11-11 | 晶元光電股份有限公司 | 多維度發光裝置 |
TWI451596B (zh) * | 2010-07-20 | 2014-09-01 | Epistar Corp | 一種陣列式發光元件 |
JP2012028749A (ja) | 2010-07-22 | 2012-02-09 | Seoul Opto Devices Co Ltd | 発光ダイオード |
KR101142539B1 (ko) * | 2010-08-18 | 2012-05-08 | 한국전기연구원 | 역방향 직렬접속된 발광셀 어레이가 구비된 교류용 발광다이오드 칩 구조 |
CN101982883A (zh) * | 2010-09-01 | 2011-03-02 | 晶科电子(广州)有限公司 | 一种由倒装发光单元阵列组成的发光器件及其制造方法 |
US9035329B2 (en) * | 2010-09-13 | 2015-05-19 | Epistar Corporation | Light-emitting device |
KR101142965B1 (ko) | 2010-09-24 | 2012-05-08 | 서울반도체 주식회사 | 웨이퍼 레벨 발광 다이오드 패키지 및 그것을 제조하는 방법 |
US9070851B2 (en) | 2010-09-24 | 2015-06-30 | Seoul Semiconductor Co., Ltd. | Wafer-level light emitting diode package and method of fabricating the same |
TWI472058B (zh) * | 2010-10-13 | 2015-02-01 | Interlight Optotech Corp | 發光二極體裝置 |
TWI420959B (zh) * | 2010-10-20 | 2013-12-21 | Advanced Optoelectronic Tech | 發光二極體模組 |
WO2012063208A1 (en) * | 2010-11-11 | 2012-05-18 | Koninklijke Philips Electronics N.V. | A led assembly |
US8556469B2 (en) | 2010-12-06 | 2013-10-15 | Cree, Inc. | High efficiency total internal reflection optic for solid state lighting luminaires |
RU2446511C1 (ru) * | 2010-12-08 | 2012-03-27 | Общество с ограниченной ответственностью "Новые Кремневые Технологии" (ООО НКТ) | Полупроводниковый прибор |
KR20120070278A (ko) * | 2010-12-21 | 2012-06-29 | 삼성엘이디 주식회사 | 발광모듈 및 발광모듈 제조방법 |
JP6000127B2 (ja) * | 2011-01-07 | 2016-09-28 | 株式会社カネカ | 有機el装置 |
US9516713B2 (en) * | 2011-01-25 | 2016-12-06 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting device |
US9166126B2 (en) | 2011-01-31 | 2015-10-20 | Cree, Inc. | Conformally coated light emitting devices and methods for providing the same |
US8962443B2 (en) * | 2011-01-31 | 2015-02-24 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Semiconductor device having an airbridge and method of fabricating the same |
US9786811B2 (en) | 2011-02-04 | 2017-10-10 | Cree, Inc. | Tilted emission LED array |
KR101104767B1 (ko) * | 2011-02-09 | 2012-01-12 | (주)세미머티리얼즈 | 발광 장치 |
US11251164B2 (en) | 2011-02-16 | 2022-02-15 | Creeled, Inc. | Multi-layer conversion material for down conversion in solid state lighting |
US9401692B2 (en) | 2012-10-29 | 2016-07-26 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Acoustic resonator having collar structure |
US9490418B2 (en) | 2011-03-29 | 2016-11-08 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Acoustic resonator comprising collar and acoustic reflector with temperature compensating layer |
US9490771B2 (en) | 2012-10-29 | 2016-11-08 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Acoustic resonator comprising collar and frame |
DE102011015821B4 (de) * | 2011-04-01 | 2023-04-20 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Optoelektronischer Halbleiterchip |
KR101216937B1 (ko) | 2011-04-07 | 2012-12-31 | 서울반도체 주식회사 | 다수의 셀이 결합된 발광 소자 및 이의 제조 방법 및 이를 이용한 발광 장치 |
US20120269520A1 (en) * | 2011-04-19 | 2012-10-25 | Hong Steve M | Lighting apparatuses and led modules for both illumation and optical communication |
DE102011102032A1 (de) | 2011-05-19 | 2012-11-22 | Osram Opto Semiconductors Gmbh | Optoelektronisches Halbleitermodul und Display mit einer Mehrzahl derartiger Module |
US20120306390A1 (en) * | 2011-06-03 | 2012-12-06 | Taiwan Semiconductor Manufacturing Company, Ltd. | Architecture for Supporting Modulized Full Operation Junction Ultra High Voltage (UHV) Light Emitting Diode (LED) Device |
US10842016B2 (en) | 2011-07-06 | 2020-11-17 | Cree, Inc. | Compact optically efficient solid state light source with integrated thermal management |
USD700584S1 (en) | 2011-07-06 | 2014-03-04 | Cree, Inc. | LED component |
CN102255012B (zh) * | 2011-07-15 | 2013-03-20 | 上海蓝光科技有限公司 | 一种高压直流发光二极管芯片制造方法及其结构 |
RU2465683C1 (ru) * | 2011-08-09 | 2012-10-27 | Вячеслав Николаевич Козубов | Способ формирования светоизлучающих матриц |
JP5403832B2 (ja) * | 2011-08-29 | 2014-01-29 | 星和電機株式会社 | 発光装置 |
US20130175516A1 (en) * | 2011-09-02 | 2013-07-11 | The Procter & Gamble Company | Light emitting apparatus |
KR101220426B1 (ko) | 2011-09-19 | 2013-02-05 | 서울옵토디바이스주식회사 | 복수의 발광 셀을 구비하는 발광 소자 |
US8350251B1 (en) | 2011-09-26 | 2013-01-08 | Glo Ab | Nanowire sized opto-electronic structure and method for manufacturing the same |
JP5732140B2 (ja) * | 2011-09-30 | 2015-06-10 | 創光科学株式会社 | 窒化物半導体素子及びその製造方法 |
RU2474920C1 (ru) * | 2011-11-14 | 2013-02-10 | Вячеслав Николаевич Козубов | Способ формирования светоизлучающих матриц |
TWI427760B (zh) * | 2011-11-17 | 2014-02-21 | Helio Optoelectronics Corp | 高壓交流發光二極體結構 |
US9144121B2 (en) | 2011-11-20 | 2015-09-22 | Jacobo Frias, SR. | Reconfigurable LED arrays and lighting fixtures |
US20120087130A1 (en) * | 2011-11-20 | 2012-04-12 | Foxsemicon Integrated Technology, Inc. | Alternating current led illumination apparatus |
GB2496851A (en) | 2011-11-21 | 2013-05-29 | Photonstar Led Ltd | Led light source with passive chromaticity tuning |
CN104269424B (zh) * | 2011-11-23 | 2017-01-18 | 俞国宏 | 一种集成电阻的发光二极管芯片 |
DE102012024599B4 (de) | 2011-12-20 | 2020-07-09 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Anordnung mit optisch transparenten und funktionalen Bauelementen |
KR101634369B1 (ko) | 2011-12-27 | 2016-06-28 | 서울바이오시스 주식회사 | 복수개의 발광셀들을 갖는 웨이퍼 레벨 발광 다이오드 패키지 및 그것을 제조하는 방법 |
CN103200728B (zh) | 2012-01-10 | 2015-02-04 | 四川新力光源股份有限公司 | 交流电直接恒流驱动的白光led发光装置 |
EP2626901A1 (en) | 2012-02-10 | 2013-08-14 | Oki Data Corporation | Semiconductor light emitting apparatus, image displaying apparatus, mobile terminal, head-up display apparatus, image projector, head-mounted display apparatus, and image forming apparatus |
KR101202175B1 (ko) | 2012-03-26 | 2012-11-15 | 서울반도체 주식회사 | 발광 장치 |
RU2492550C1 (ru) * | 2012-05-22 | 2013-09-10 | Вячеслав Николаевич Козубов | Способ формирования светоизлучающих матриц |
JP5939055B2 (ja) * | 2012-06-28 | 2016-06-22 | 住友電気工業株式会社 | 半導体装置及び半導体装置の製造方法 |
US8974077B2 (en) | 2012-07-30 | 2015-03-10 | Ultravision Technologies, Llc | Heat sink for LED light source |
US10388690B2 (en) | 2012-08-07 | 2019-08-20 | Seoul Viosys Co., Ltd. | Wafer level light-emitting diode array |
US20140056003A1 (en) * | 2012-08-20 | 2014-02-27 | John Frattalone | Modular video and lighting displays |
US9171826B2 (en) | 2012-09-04 | 2015-10-27 | Micron Technology, Inc. | High voltage solid-state transducers and solid-state transducer arrays having electrical cross-connections and associated systems and methods |
DE202013012470U1 (de) * | 2012-09-07 | 2017-01-12 | Seoul Viosys Co., Ltd. | Leuchtdiodenarray auf WAFER-Ebene |
US9076950B2 (en) | 2012-09-14 | 2015-07-07 | Tsmc Solid State Lighting Ltd. | High voltage LED with improved heat dissipation and light extraction |
CN106206558B (zh) * | 2012-09-14 | 2019-04-09 | 晶元光电股份有限公司 | 具有改进的热耗散和光提取的高压led |
JP6068073B2 (ja) * | 2012-09-18 | 2017-01-25 | スタンレー電気株式会社 | Ledアレイ |
CN102903813B (zh) * | 2012-09-29 | 2014-04-02 | 海迪科(南通)光电科技有限公司 | 集成图形阵列高压led器件的制备方法 |
US9385684B2 (en) | 2012-10-23 | 2016-07-05 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Acoustic resonator having guard ring |
KR20140059985A (ko) * | 2012-11-09 | 2014-05-19 | 엘지이노텍 주식회사 | 발광소자 |
US8558254B1 (en) * | 2012-11-29 | 2013-10-15 | Hong Kong Applied Science and Technology Research Institute Company Limited | High reliability high voltage vertical LED arrays |
KR102071035B1 (ko) | 2012-12-21 | 2020-01-29 | 서울바이오시스 주식회사 | 발광 다이오드 및 그것을 제조하는 방법 |
US9356212B2 (en) | 2012-12-21 | 2016-05-31 | Seoul Viosys Co., Ltd. | Light emitting diode and method of fabricating the same |
CN107768399B (zh) | 2012-12-21 | 2022-02-18 | 首尔伟傲世有限公司 | 发光二极管 |
CN103148381A (zh) * | 2013-01-24 | 2013-06-12 | 左洪波 | 一种led灯封装结构 |
TW201431138A (zh) * | 2013-01-25 | 2014-08-01 | zhong-lin Wang | 免封裝製程且免電路板式發光二極體裝置及其製造方法 |
JP6176032B2 (ja) * | 2013-01-30 | 2017-08-09 | 日亜化学工業株式会社 | 半導体発光素子 |
RU2514055C1 (ru) * | 2013-02-05 | 2014-04-27 | Вячеслав Николаевич Козубов | Способ размещения и соединения светоизлучающих элементов в гирляндах, размещаемых в монолитных светоизлучающих матрицах |
TWI610416B (zh) * | 2013-02-15 | 2018-01-01 | 首爾偉傲世有限公司 | 抗靜電放電的led晶片以及包含該led晶片的led封裝 |
US20140231852A1 (en) * | 2013-02-15 | 2014-08-21 | Seoul Viosys Co., Ltd. | Led chip resistant to electrostatic discharge and led package including the same |
KR102006389B1 (ko) | 2013-03-14 | 2019-08-02 | 삼성전자주식회사 | 발광 소자 패키지 및 발광 장치 |
CN103256574B (zh) * | 2013-04-18 | 2015-02-04 | 李宪坤 | 一种led灯具智能布线方法及系统 |
CN104241262B (zh) | 2013-06-14 | 2020-11-06 | 惠州科锐半导体照明有限公司 | 发光装置以及显示装置 |
TWI513068B (zh) * | 2013-07-12 | 2015-12-11 | Lite On Opto Technology Changzhou Co Ltd | 發光二極體結構、發光二極體結構的金屬支架、及承載座模組 |
CN104282823A (zh) * | 2013-07-12 | 2015-01-14 | 光宝科技股份有限公司 | 发光二极管封装结构 |
US9583689B2 (en) * | 2013-07-12 | 2017-02-28 | Lite-On Opto Technology (Changzhou) Co., Ltd. | LED package |
DE102014011893B4 (de) | 2013-08-16 | 2020-10-01 | Seoul Viosys Co., Ltd. | Leuchtdiode |
US9117733B2 (en) * | 2013-10-18 | 2015-08-25 | Posco Led Company Ltd. | Light emitting module and lighting apparatus having the same |
EP2881982B1 (en) | 2013-12-05 | 2019-09-04 | IMEC vzw | Method for fabricating cmos compatible contact layers in semiconductor devices |
KR102122359B1 (ko) * | 2013-12-10 | 2020-06-12 | 삼성전자주식회사 | 발광장치 제조방법 |
US9660064B2 (en) * | 2013-12-26 | 2017-05-23 | Intel Corporation | Low sheet resistance GaN channel on Si substrates using InAlN and AlGaN bi-layer capping stack |
TWI614920B (zh) | 2014-05-19 | 2018-02-11 | 晶元光電股份有限公司 | 光電元件及其製造方法 |
US9577171B2 (en) * | 2014-06-03 | 2017-02-21 | Seoul Viosys Co., Ltd. | Light emitting device package having improved heat dissipation efficiency |
TWI556478B (zh) * | 2014-06-30 | 2016-11-01 | 億光電子工業股份有限公司 | 發光二極體裝置 |
KR102231646B1 (ko) | 2014-10-17 | 2021-03-24 | 엘지이노텍 주식회사 | 발광 소자 |
AT516416B1 (de) * | 2014-10-21 | 2019-12-15 | Zkw Group Gmbh | Leiterplatte mit einer Mehrzahl von an der Leiterplatte in zumindest einer Gruppe angeordneter elektronischer Bauteile |
KR101651923B1 (ko) | 2014-12-31 | 2016-08-29 | 최운용 | 고전압 구동 발광소자 및 그 제조 방법 |
EP3258507A2 (en) | 2015-02-13 | 2017-12-20 | Seoul Viosys Co., Ltd | Light-emitting element and light-emitting diode |
KR102268107B1 (ko) * | 2015-02-26 | 2021-06-22 | 엘지이노텍 주식회사 | 발광 소자 |
DE102015114010A1 (de) * | 2015-08-24 | 2017-03-02 | Osram Opto Semiconductors Gmbh | Optoelektronisches Bauelement, Verfahren zur Herstellung eines optoelektronischen Bauelements und Verfahren zum Betrieb eines optoelektronischen Bauelements |
KR102586691B1 (ko) * | 2015-11-20 | 2023-10-11 | 루미리즈 홀딩 비.브이. | 상이한 전기적 구성들을 가능하게 하는 다이 본드 패드 설계 |
KR20160082491A (ko) | 2016-02-11 | 2016-07-08 | 최운용 | 고전압 구동 발광소자 및 그 제조 방법 |
KR101731058B1 (ko) | 2016-02-11 | 2017-05-11 | 서울바이오시스 주식회사 | 웨이퍼 레벨 발광 다이오드 패키지 및 그것을 제조하는 방법 |
KR101845907B1 (ko) | 2016-02-26 | 2018-04-06 | 피에스아이 주식회사 | 초소형 led 모듈을 포함하는 디스플레이 장치 |
CN105789400B (zh) * | 2016-03-14 | 2018-08-14 | 聚灿光电科技股份有限公司 | 一种并联结构的led芯片及其制造方法 |
CN205944139U (zh) | 2016-03-30 | 2017-02-08 | 首尔伟傲世有限公司 | 紫外线发光二极管封装件以及包含此的发光二极管模块 |
US20190237027A1 (en) * | 2016-05-04 | 2019-08-01 | Shenzhen China Star Optoelectronics Technology Co., Ltd | Color temperature adjustment device and mthod of liquid crystal panel and liquid crystal panel |
DE102016109951A1 (de) * | 2016-05-31 | 2017-11-30 | Valeo Schalter Und Sensoren Gmbh | Lichterzeugungsvorrichtung für eine Kopf-oben-Anzeige eines Kraftfahrzeugs |
JP6447580B2 (ja) | 2016-06-15 | 2019-01-09 | 日亜化学工業株式会社 | 発光装置 |
CN109936890B (zh) | 2017-12-18 | 2022-03-15 | 群创光电股份有限公司 | 电子装置 |
US20210036049A1 (en) * | 2019-07-31 | 2021-02-04 | Epistar Corporation | Light emitting device and manufacturing method thereof |
JP7014973B2 (ja) | 2019-08-28 | 2022-02-02 | 日亜化学工業株式会社 | 発光装置 |
US11538849B2 (en) * | 2020-05-28 | 2022-12-27 | X Display Company Technology Limited | Multi-LED structures with reduced circuitry |
KR102447407B1 (ko) | 2020-11-12 | 2022-09-27 | 주식회사 에스엘바이오닉스 | 반도체 발광소자 |
DE102021130804A1 (de) * | 2021-11-24 | 2023-05-25 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Leuchtfolie, anzeigelement und verfahren zum betreiben einer leuchtfolie |
Family Cites Families (98)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5829361Y2 (ja) * | 1976-09-13 | 1983-06-28 | シャープ株式会社 | 加熱調理装置のタ−ンテ−ブル |
JPS54102886A (en) * | 1978-01-31 | 1979-08-13 | Futaba Denshi Kogyo Kk | Light emitting diode indicator |
JPS556687A (en) * | 1978-06-29 | 1980-01-18 | Handotai Kenkyu Shinkokai | Traffic use display |
JPS5517180A (en) * | 1978-07-24 | 1980-02-06 | Handotai Kenkyu Shinkokai | Light emitting diode display |
US4242281A (en) * | 1978-11-17 | 1980-12-30 | International Flavors & Fragrances Inc. | Process for preparing 6-hydroxy-2,6-dimethylheptanal and intermediates thereof |
JPS60960B2 (ja) * | 1979-12-17 | 1985-01-11 | 松下電器産業株式会社 | 窒化ガリウム発光素子アレイの製造方法 |
JPS5714058A (en) * | 1980-06-28 | 1982-01-25 | Ricoh Co Ltd | Printer |
JPS59206873A (ja) | 1983-05-11 | 1984-11-22 | 株式会社東芝 | 発光表示装置 |
US4589745A (en) * | 1985-01-25 | 1986-05-20 | Polaroid Corporation | Geometric LED layout for line exposure |
JPH0716001B2 (ja) | 1986-05-21 | 1995-02-22 | 日本電気株式会社 | 電界効果トランジスタおよびその製造方法 |
JPH0783053B2 (ja) * | 1987-06-19 | 1995-09-06 | 三菱電機株式会社 | 半導体装置 |
US5187377A (en) * | 1988-07-15 | 1993-02-16 | Sharp Kabushiki Kaisha | LED array for emitting light of multiple wavelengths |
US4943539A (en) * | 1989-05-09 | 1990-07-24 | Motorola, Inc. | Process for making a multilayer metallization structure |
JPH03229426A (ja) * | 1989-11-29 | 1991-10-11 | Texas Instr Inc <Ti> | 集積回路及びその製造方法 |
JPH0423154A (ja) | 1990-05-18 | 1992-01-27 | Hitachi Ltd | 端末制御方法 |
JPH0423154U (zh) | 1990-06-14 | 1992-02-26 | ||
JP2759117B2 (ja) | 1990-11-28 | 1998-05-28 | 富士写真フイルム株式会社 | 感光材料処理装置 |
JPH04365382A (ja) * | 1991-06-13 | 1992-12-17 | Toshiba Corp | 半導体発光装置及びその駆動方法 |
JPH06104273A (ja) * | 1992-09-18 | 1994-04-15 | Hitachi Ltd | 半導体装置 |
US5298853A (en) * | 1992-12-18 | 1994-03-29 | Lubos Ryba | Electrical apparatus for detecting relationships in three phase AC networks |
US5376580A (en) * | 1993-03-19 | 1994-12-27 | Hewlett-Packard Company | Wafer bonding of light emitting diode layers |
JPH0786691A (ja) | 1993-09-14 | 1995-03-31 | Sony Corp | 発光装置 |
US5463280A (en) * | 1994-03-03 | 1995-10-31 | National Service Industries, Inc. | Light emitting diode retrofit lamp |
JPH07272849A (ja) * | 1994-03-31 | 1995-10-20 | Nippondenso Co Ltd | 薄膜el表示器とその製造方法 |
JPH0856018A (ja) * | 1994-08-11 | 1996-02-27 | Rohm Co Ltd | 半導体発光素子、および半導体発光素子の製造方法 |
US5693963A (en) * | 1994-09-19 | 1997-12-02 | Kabushiki Kaisha Toshiba | Compound semiconductor device with nitride |
JPH08111562A (ja) * | 1994-10-11 | 1996-04-30 | Mitsubishi Electric Corp | アレイ型半導体レーザ装置,及びその製造方法 |
US5608234A (en) * | 1994-11-14 | 1997-03-04 | The Whitaker Corporation | Semi-insulating edge emitting light emitting diode |
US5936599A (en) * | 1995-01-27 | 1999-08-10 | Reymond; Welles | AC powered light emitting diode array circuits for use in traffic signal displays |
US5585648A (en) * | 1995-02-03 | 1996-12-17 | Tischler; Michael A. | High brightness electroluminescent device, emitting in the green to ultraviolet spectrum, and method of making the same |
US6180960B1 (en) * | 1995-04-12 | 2001-01-30 | Nippon Sheet Glass Co., Ltd. | Surface light-emitting element and self-scanning type light-emitting device |
JP3905935B2 (ja) * | 1995-09-01 | 2007-04-18 | 株式会社東芝 | 半導体素子及び半導体素子の製造方法 |
US5583349A (en) * | 1995-11-02 | 1996-12-10 | Motorola | Full color light emitting diode display |
JPH09153644A (ja) | 1995-11-30 | 1997-06-10 | Toyoda Gosei Co Ltd | 3族窒化物半導体表示装置 |
JP2768343B2 (ja) * | 1996-02-14 | 1998-06-25 | 日本電気株式会社 | 窒化iii族化合物半導体の結晶成長方法 |
KR100190080B1 (ko) * | 1996-08-20 | 1999-06-01 | 윤종용 | 반도체 메모리 장치의 메모리 셀 테스트용 고전압 감지 회로 |
JPH10107316A (ja) * | 1996-10-01 | 1998-04-24 | Toyoda Gosei Co Ltd | 3族窒化物半導体発光素子 |
US5977612A (en) * | 1996-12-20 | 1999-11-02 | Xerox Corporation | Semiconductor devices constructed from crystallites |
EP1959506A2 (en) * | 1997-01-31 | 2008-08-20 | Matsushita Electric Industrial Co., Ltd. | Method of manufacturing a semiconductor light-emitting device |
JPH10261818A (ja) | 1997-03-19 | 1998-09-29 | Fujitsu Ltd | 発光半導体装置 |
JP3934730B2 (ja) | 1997-03-28 | 2007-06-20 | ローム株式会社 | 半導体発光素子 |
US5986324A (en) * | 1997-04-11 | 1999-11-16 | Raytheon Company | Heterojunction bipolar transistor |
EP0881686A3 (en) * | 1997-05-28 | 2000-04-19 | Oki Data Corporation | LED array and LED printer head |
JP3505374B2 (ja) * | 1997-11-14 | 2004-03-08 | 三洋電機株式会社 | 発光部品 |
EP1928034A3 (en) * | 1997-12-15 | 2008-06-18 | Philips Lumileds Lighting Company LLC | Light emitting device |
US6412971B1 (en) * | 1998-01-02 | 2002-07-02 | General Electric Company | Light source including an array of light emitting semiconductor devices and control method |
US6081031A (en) * | 1998-06-29 | 2000-06-27 | Semiconductor Components Industries, Llc | Semiconductor package consisting of multiple conductive layers |
JP4470237B2 (ja) | 1998-07-23 | 2010-06-02 | ソニー株式会社 | 発光素子,発光装置および表示装置並びに発光素子の製造方法 |
JP2000068555A (ja) * | 1998-08-19 | 2000-03-03 | Hitachi Ltd | 照明システム |
US6461019B1 (en) * | 1998-08-28 | 2002-10-08 | Fiber Optic Designs, Inc. | Preferred embodiment to LED light string |
JP3497741B2 (ja) * | 1998-09-25 | 2004-02-16 | 株式会社東芝 | 半導体発光装置及び半導体発光装置の駆動方法 |
US6307218B1 (en) | 1998-11-20 | 2001-10-23 | Lumileds Lighting, U.S., Llc | Electrode structures for light emitting devices |
JP2000182508A (ja) | 1998-12-16 | 2000-06-30 | Sony Corp | 電界放出型カソード、電子放出装置、および電子放出装置の製造方法 |
JP4296644B2 (ja) | 1999-01-29 | 2009-07-15 | 豊田合成株式会社 | 発光ダイオード |
JP3702700B2 (ja) * | 1999-03-31 | 2005-10-05 | 豊田合成株式会社 | Iii族窒化物系化合物半導体素子及びその製造方法 |
JP2000311876A (ja) * | 1999-04-27 | 2000-11-07 | Hitachi Ltd | 配線基板の製造方法および製造装置 |
US6489637B1 (en) * | 1999-06-09 | 2002-12-03 | Sanyo Electric Co., Ltd. | Hybrid integrated circuit device |
US6639354B1 (en) * | 1999-07-23 | 2003-10-28 | Sony Corporation | Light emitting device, production method thereof, and light emitting apparatus and display unit using the same |
CN1134849C (zh) * | 1999-09-20 | 2004-01-14 | 晶元光电股份有限公司 | 发光二极管 |
JP2001168388A (ja) * | 1999-09-30 | 2001-06-22 | Sharp Corp | 窒化ガリウム系化合物半導体チップ及びその製造方法ならびに窒化ガリウム系化合物半導体ウエハー |
JP2001111109A (ja) | 1999-10-07 | 2001-04-20 | Sharp Corp | 窒化ガリウム系化合物半導体発光素子 |
JP2001150718A (ja) | 1999-11-26 | 2001-06-05 | Kyocera Corp | 発光素子アレイ |
JP2001156381A (ja) | 1999-11-30 | 2001-06-08 | Kyocera Corp | 光モジュール |
JP3659098B2 (ja) * | 1999-11-30 | 2005-06-15 | 日亜化学工業株式会社 | 窒化物半導体発光素子 |
US6410942B1 (en) | 1999-12-03 | 2002-06-25 | Cree Lighting Company | Enhanced light extraction through the use of micro-LED arrays |
US6547246B2 (en) * | 1999-12-21 | 2003-04-15 | Prime Table Games Llc | Method and apparatus for playing elective wagering card game |
JP2001177146A (ja) | 1999-12-21 | 2001-06-29 | Mitsubishi Cable Ind Ltd | 三角形状の半導体素子及びその製法 |
US6885035B2 (en) * | 1999-12-22 | 2005-04-26 | Lumileds Lighting U.S., Llc | Multi-chip semiconductor LED assembly |
US6486499B1 (en) * | 1999-12-22 | 2002-11-26 | Lumileds Lighting U.S., Llc | III-nitride light-emitting device with increased light generating capability |
US6514782B1 (en) * | 1999-12-22 | 2003-02-04 | Lumileds Lighting, U.S., Llc | Method of making a III-nitride light-emitting device with increased light generating capability |
US6566808B1 (en) * | 1999-12-22 | 2003-05-20 | General Electric Company | Luminescent display and method of making |
JP2001196634A (ja) * | 2000-01-07 | 2001-07-19 | Nippon Sheet Glass Co Ltd | 発光ダイオードモジュール |
JP2001307506A (ja) * | 2000-04-17 | 2001-11-02 | Hitachi Ltd | 白色発光装置および照明器具 |
JP2001351789A (ja) | 2000-06-02 | 2001-12-21 | Toshiba Lighting & Technology Corp | 発光ダイオード駆動装置 |
JP2002016290A (ja) * | 2000-06-28 | 2002-01-18 | Toshiba Lighting & Technology Corp | Led光源装置 |
JP2002026384A (ja) | 2000-07-05 | 2002-01-25 | Nichia Chem Ind Ltd | 集積型窒化物半導体発光素子 |
DE10038213A1 (de) | 2000-08-04 | 2002-03-07 | Osram Opto Semiconductors Gmbh | Strahlungsquelle und Verfahren zur Herstellung einer Linsensform |
DE10051159C2 (de) * | 2000-10-16 | 2002-09-19 | Osram Opto Semiconductors Gmbh | LED-Modul, z.B. Weißlichtquelle |
JP2002208541A (ja) * | 2001-01-11 | 2002-07-26 | Shiro Sakai | 窒化物系半導体装置及びその製造方法 |
US6891200B2 (en) * | 2001-01-25 | 2005-05-10 | Matsushita Electric Industrial Co., Ltd. | Light-emitting unit, light-emitting unit assembly, and lighting apparatus produced using a plurality of light-emitting units |
US6791119B2 (en) * | 2001-02-01 | 2004-09-14 | Cree, Inc. | Light emitting diodes including modifications for light extraction |
US6547249B2 (en) * | 2001-03-29 | 2003-04-15 | Lumileds Lighting U.S., Llc | Monolithic series/parallel led arrays formed on highly resistive substrates |
US6841931B2 (en) * | 2001-04-12 | 2005-01-11 | Toyoda Gosei Co., Ltd. | LED lamp |
US20020158261A1 (en) * | 2001-04-25 | 2002-10-31 | Ming-Tang Lee | Light emitting diode layout structure |
JP3811624B2 (ja) * | 2001-04-27 | 2006-08-23 | 松下電器産業株式会社 | 半導体装置 |
WO2003016782A1 (en) * | 2001-08-09 | 2003-02-27 | Matsushita Electric Industrial Co., Ltd. | Led illuminator and card type led illuminating light source |
US6641294B2 (en) * | 2002-03-22 | 2003-11-04 | Emteq, Inc. | Vehicle lighting assembly with stepped dimming |
JP3822545B2 (ja) | 2002-04-12 | 2006-09-20 | 士郎 酒井 | 発光装置 |
JP4195041B2 (ja) | 2002-04-12 | 2008-12-10 | ソウル セミコンダクター カンパニー リミテッド | 発光装置 |
CN100595938C (zh) * | 2002-08-01 | 2010-03-24 | 日亚化学工业株式会社 | 半导体发光元件及其制造方法、使用此的发光装置 |
US7034470B2 (en) * | 2002-08-07 | 2006-04-25 | Eastman Kodak Company | Serially connecting OLED devices for area illumination |
EP1553641B1 (en) * | 2002-08-29 | 2011-03-02 | Seoul Semiconductor Co., Ltd. | Light-emitting device having light-emitting diodes |
US7009199B2 (en) * | 2002-10-22 | 2006-03-07 | Cree, Inc. | Electronic devices having a header and antiparallel connected light emitting diodes for producing light from AC current |
US6957899B2 (en) * | 2002-10-24 | 2005-10-25 | Hongxing Jiang | Light emitting diodes for high AC voltage operation and general lighting |
US20040109833A1 (en) * | 2002-12-09 | 2004-06-10 | Xiaozhong Tang | High efficacy, low irritation aluminum salts and related products |
TW200501464A (en) * | 2004-08-31 | 2005-01-01 | Ind Tech Res Inst | LED chip structure with AC loop |
JP4648780B2 (ja) * | 2005-07-11 | 2011-03-09 | Hoya株式会社 | 電子内視鏡用撮像素子パッケージ |
US8901575B2 (en) * | 2005-08-09 | 2014-12-02 | Seoul Viosys Co., Ltd. | AC light emitting diode and method for fabricating the same |
-
2003
- 2003-08-28 EP EP20030794115 patent/EP1553641B1/en not_active Expired - Lifetime
- 2003-08-28 EP EP20090000561 patent/EP2101355A1/en not_active Ceased
- 2003-08-28 EP EP09014623.4A patent/EP2154721B1/en not_active Expired - Lifetime
- 2003-08-28 CN CNB2007101029609A patent/CN100570883C/zh not_active Expired - Lifetime
- 2003-08-28 RU RU2005103616A patent/RU2295174C2/ru active
- 2003-08-28 WO PCT/JP2003/010922 patent/WO2004023568A1/ja active IP Right Grant
- 2003-08-28 EP EP20090014622 patent/EP2149906A3/en not_active Withdrawn
- 2003-08-28 EP EP07118916.1A patent/EP1892764B1/en not_active Expired - Lifetime
- 2003-08-28 CN CNB038206226A patent/CN100421266C/zh not_active Expired - Lifetime
- 2003-08-28 EP EP09014624.2A patent/EP2154722B1/en not_active Expired - Lifetime
- 2003-08-28 US US10/525,998 patent/US7417259B2/en not_active Expired - Lifetime
- 2003-08-28 EP EP20090014620 patent/EP2157609A3/en not_active Withdrawn
- 2003-08-28 AT AT03794115T patent/ATE500616T1/de not_active IP Right Cessation
- 2003-08-28 ES ES03794115T patent/ES2362407T3/es not_active Expired - Lifetime
- 2003-08-28 EP EP20090014621 patent/EP2149905A3/en not_active Withdrawn
- 2003-08-28 DE DE60336252T patent/DE60336252D1/de not_active Expired - Lifetime
- 2003-08-28 EP EP18150767.4A patent/EP3389094A1/en not_active Withdrawn
- 2003-08-28 EP EP20090014625 patent/EP2149907A3/en not_active Withdrawn
- 2003-08-28 KR KR20057002667A patent/KR100697803B1/ko active IP Right Grant
- 2003-08-29 TW TW92123908A patent/TWI280672B/zh not_active IP Right Cessation
-
2007
- 2007-02-12 US US11/705,205 patent/US7956367B2/en active Active
-
2008
- 2008-04-01 US US12/060,693 patent/US8129729B2/en not_active Expired - Lifetime
- 2008-06-16 US US12/139,927 patent/US7897982B2/en not_active Expired - Lifetime
-
2009
- 2009-01-12 US US12/352,240 patent/US8097889B2/en not_active Expired - Lifetime
- 2009-01-12 US US12/352,280 patent/US7615793B2/en not_active Expired - Lifetime
- 2009-01-12 US US12/352,296 patent/US8084774B2/en active Active
- 2009-01-12 US US12/352,271 patent/US7569861B2/en not_active Expired - Lifetime
- 2009-06-04 US US12/478,456 patent/US7667237B2/en not_active Expired - Lifetime
- 2009-06-05 US US12/479,380 patent/US7646031B2/en not_active Expired - Lifetime
-
2010
- 2010-01-05 US US12/652,518 patent/US8680533B2/en not_active Expired - Lifetime
- 2010-12-02 US US12/958,947 patent/US8735918B2/en not_active Expired - Lifetime
-
2012
- 2012-08-13 US US13/584,140 patent/US20120305951A1/en not_active Abandoned
- 2012-09-11 US US13/610,819 patent/US8735911B2/en not_active Expired - Lifetime
-
2013
- 2013-05-09 US US13/890,878 patent/US9947717B2/en not_active Expired - Lifetime
-
2014
- 2014-12-26 US US14/583,476 patent/US20150108497A1/en not_active Abandoned
-
2017
- 2017-02-10 US US15/430,440 patent/US20170154922A1/en not_active Abandoned
Cited By (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10665756B2 (en) | 2009-10-20 | 2020-05-26 | Epistar Corporation | Optoelectronic device |
US10418524B2 (en) | 2009-10-20 | 2019-09-17 | Epistar Corporation | Optoelectronic device |
US9985184B2 (en) | 2009-10-20 | 2018-05-29 | Epistar Corporation | Optoelectronic device |
US9324691B2 (en) | 2009-10-20 | 2016-04-26 | Epistar Corporation | Optoelectronic device |
CN102237350A (zh) * | 2010-04-20 | 2011-11-09 | 东芝照明技术株式会社 | 照明装置以及包括发光元件的发光装置 |
US8872198B2 (en) | 2010-04-20 | 2014-10-28 | Toshiba Lighting & Technology Corporation | Luminaire and light-emitting apparatus with light-emitting device |
CN102315239B (zh) * | 2010-07-02 | 2016-08-17 | 晶元光电股份有限公司 | 光电元件 |
CN105977272A (zh) * | 2010-07-02 | 2016-09-28 | 晶元光电股份有限公司 | 光电元件 |
CN102315239A (zh) * | 2010-07-02 | 2012-01-11 | 晶元光电股份有限公司 | 光电元件 |
CN105977272B (zh) * | 2010-07-02 | 2021-01-01 | 晶元光电股份有限公司 | 光电元件 |
CN104425539A (zh) * | 2013-09-05 | 2015-03-18 | 亚世达科技股份有限公司 | 发光二极管单元及发光装置 |
CN107078096A (zh) * | 2014-09-22 | 2017-08-18 | 株式会社村田制作所 | 半导体装置 |
CN107078096B (zh) * | 2014-09-22 | 2020-10-02 | 株式会社村田制作所 | 半导体装置 |
CN104992938A (zh) * | 2015-07-20 | 2015-10-21 | 深圳市君和光电子有限公司 | 一种倒装集成led光源 |
Also Published As
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN100421266C (zh) | 具有多个发光元件的发光装置 | |
JP3822545B2 (ja) | 発光装置 | |
JP5524881B2 (ja) | 発光装置 | |
JP4195041B2 (ja) | 発光装置 | |
JP4949211B2 (ja) | 発光装置 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
CX01 | Expiry of patent term | ||
CX01 | Expiry of patent term |
Granted publication date: 20091216 |