CN101053079A - 堆叠式封装的改进 - Google Patents
堆叠式封装的改进 Download PDFInfo
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- CN101053079A CN101053079A CNA2005800378141A CN200580037814A CN101053079A CN 101053079 A CN101053079 A CN 101053079A CN A2005800378141 A CNA2005800378141 A CN A2005800378141A CN 200580037814 A CN200580037814 A CN 200580037814A CN 101053079 A CN101053079 A CN 101053079A
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Abstract
通过切断加工过程中的单元制造多个微电子组件(60),该加工过程中的单元包括上部基板(40)和下部基板(20),使微电子元件(36)设置在基板之间。在另一实施例中,将引线框(452)连结到基板(440)上以使引线从该基板突出。引线框(452)连结到另一基板(470)上,使得一个或多个微电子元件(436,404,406)设置在两基板之间。
Description
相关申请的交叉引用
本申请要求2004年11月3日提交的美国临时专利申请No.60/624,667的申请日的优先权,其内容援引于此以供参考。
技术领域
诸如半导体芯片的微电子元件通常被提供以对半导体芯片或其它电子元件提供物理和化学保护的封装。这种封装通常包括诸如由电介质形成且其上具有导电端子的小电路配电板之类的封装基板。芯片装在配电板上并电气连接到封装基板的端子上。通常芯片和基板的一部分由密封剂或上部模制件覆盖,使得仅露出基板的端子承载外表面。这种封装件可方便地运载、存储和处理。该封装件可使用标准安装技术,最通常是表面安装技术装到诸如电路板之类的较大电路配电板上。在本技术领域人们已经付出了很大的努力来使这种封装件变得更小,以使封装芯片在电路板上占据更小面积。例如,称为芯片比例封装件的封装件占据电路板上与芯片本身面积相同的面积,或仅稍大于芯片本身的面积。但是,即使用芯片比例封装件,几个封装芯片占据的总面积也大于或等于单个芯片的总面积。
人们已经提出一种“堆叠的”封装件,其中多个芯片一个在另一个上安装在共同封装件内。该共同封装件安装到电路配电板上的面积可等于或仅略大于通常安装包含单芯片的单个封装件需要的面积。
堆叠的封装方法节约了电路配电板上的空间。彼此功能相关联的芯片或其它元件可设置在共同的堆叠封装件内。该封装件可包含这些元件之间的相互连接。这样,封装件所安装的主电路配电板不需要包括用于这些相互连接的导体和其它元件。这又允许使用更简单的电路配电板,且在某些情况下,允许使用具有较少层金属连接的电路配电板,由此本质上降低电路配电板的成本。此外,堆叠的封装件内的相互连接可制成与装在电路金属板上单个封装件之间可比的相互连接相比具有较低的电阻和较短的信号传播延迟时间。这又可例如通过允许在这些元件之间的信号传输中使用较高的时钟脉冲速度,增加堆叠的封装件内微电子元件的运行速度。
迄今已经提出一种形式的堆叠封装,有时称为“球形堆叠”。球形堆叠封装件包括两个或多个单个单元。每个单元包含的单元基板类似于单个封装件的封装基板,且一个或多个微电子元件安装到该单元基板上并连接到单元基板上的端子上。单个单元一个堆叠到另一个上,各单个单元基板上的端子通过诸如焊接球或插脚的导电元件连接到另一单位基板上的端子。底部单元基板的端子可组成封装件的端子,或者另外的基板可安装到封装件底部并可具有与各单元基板的端子连接的端子。例如美国公开专利申请2003/0107118和2004/0031972的某些优选实施例中描述了球形堆叠封装件,其内容援引于此以供参考。
在有时称为折叠堆叠封装件的另一类型的堆叠封装件中,在单个基板上装有两个或多个芯片或其它微电子元件。该单个基板通常具有电导体,其沿着基板延伸以与装在基板上的微电子元件彼此连接。该基板还具有导电端子,其连接到装在基板上的微电子元件中的一个或两个上。该基板在其自身上方折叠,使一部分上的微电子元件在另一部分的微电子元件上方,并使得封装基板的端子暴露在折叠封装件的底部,用于将封装件安装到电路配电板上。在折叠封装件的某些变体中,在基板被折叠成其最终构造之后,一个或多个微电子元件附连到基板上。美国专利6,121,676;美国专利申请No.10/077,388;美国专利申请No.10/655,952;美国临时专利申请No.60/403,939;美国临时专利申请No.60/408,664;和美国临时专利申请No.60/408,644的某些优选实施例示出了折叠堆叠的实例。折叠堆叠已用于各种目的,但已经发现在必须彼此通信的包装芯片中的特殊应用,例如在形成包含移动电话中基带信号处理芯片和射频功率放大器(“RFPA”)芯片的组件时,以形成紧凑的、自包含的组件。
除了本技术领域的所有这些努力,还需要进一步的改进。尤其是,需要提供可提供类似于折叠堆叠中实现的那些优点的封装件而不需实际将基板折叠。
发明内容
本发明一方面提供了一种制造多个微电子组件的方法。根据本发明该方面的方法,理想地包括以下步骤:提供加工过程中的(in-process)单元,该单元包括多个微电子元件、在微电子元件上方延伸的至少一个上部基板以及在微电子元件下方延伸的至少一个下部基板,基板中的至少一个包括多个区域;以及然后切割加工过程中的单元以形成单个单元,每个所述单元均包括所述基板中的所述至少一个和所述微电子元件中的至少一个中的每一个的一区域。
本发明的另一方面提供一种加工过程中的单元。根据本发明该方面的加工过程中的单元包括上部和下部基板以及设置在两基板之间的多个微电子元件。每个基板较佳地包括多个区域,上部基板的每个区域与下部基板的相应区域对齐,使得至少一个所述微电子单元设置在其间。较佳地,所述上部和下部基板的各区域均具有导电元件,上部基板的每个所述区域的至少一些所述导电元件电连接到所述下部基板相应区域的导电元件。
本发明的又另一方面提供了一种制造微电子组件的方法。根据本发明该方面的方法理想地包括将引线框附连到第一基板上,使得引线框的引线从该基板突出并将第一基板与第二基板组装使得至少一个微电子元件设置在第一和第二基板之间,并将所述引线连接到所述第二基板上。
附图说明
图1是示出了根据本发明一实施例过程中所利用元件的剖视图。
图2-6是类似于图1的图,但示出了该过程随后渐次的阶段的元件。
图7是示出用在根据本发明另一实施例过程中元件的剖视图。
图8是示出用在根据本发明又另一实施例过程中元件的剖视图。
图9是类似于图7和8的图,但示出了用在根据本发明另一实施例过程中的元件。
图10是示出了过程随后阶段的图9所示元件。
图11是示出了用在根据本发明另一实施例过程中基板和引线框的视图。
图12是示出了过程随后阶段的图11所示的基板和引线框。
图13是示出了在过程更后面阶段中的图11和12所示元件的视图。
图14是使用图11-13的元件制成的组件的剖视图。
具体实施方式
根据本发明一实施例的组装方法,利用方便起见在此称为下部基板20的基板,下部基板20包含限定上部表面22和下部表面24的电介质层21。下部基板20通常是具有大量的区域26的连续或半连续的条带或薄片的形式。如下文所解释的那样,每个区域26会在过程结束时组成单个封装件,且每个区域26包括如下所述会形成单个封装件的一部分的特征。
电介质层21可以是单层,或可以是包括几个内层的叠层。电介质层理想地主要由诸如聚酰亚胺、BT树脂、环氧化物或其它电介质聚合体形成,并可包括加强纤维,例如玻璃纤维。电介质层21可以是柔性或刚性的。下部基板20包括在电介质层的下表面24上露出的安装端子28、和随后的相互连接端子29以及在上部表面22上露出的传导连接元件30。在所示的具体实施例中,端子28和29形成在与连接元件30分开的一层,这些层通过电介质层21彼此分开并通过诸如延伸穿过电介质层的通路(vias)32的传导元件彼此电连接。这种设置通常称为“双金属”结构。但是,下部基板20可形成为带有传导连接构件30以及端子28和29构成的单金属层的单金属结构。例如,这种层可以设置在电介质层的底部表面24上,传导连接元件30通过电介质层上的孔(未示出)露出在顶部表面22。同样,这样的金属层可设置在上部表面22上,端子28和29通过电介质层上的孔(未示出)露出在下部表面24上。在又另一替代形式中,组成传导安装元件的一个或多个金属层、端子或两者设置在电介质层的厚度内并通过孔到适当的表面。
下部基板20具有从上部表面到下部表面延伸穿过电介质层的小孔34。小孔34可以是单个孔或细长狭槽的形式。小孔34设置在层间连接端子29附近。微电子元件36安装在下部基板20的上表面22上。每个区域26具有安装在其上的一个或多个微电子元件。在所示具体实施例中,下部基板的每个区域26承载一个微电子元件。所示微电子元件为面向下定向安装的半导体芯片,使得芯片的触点(未示出)例如用诸如焊料的粘结材料通过将触点粘结到传导安装元件而连接到基板的传导连接元件30。但是,也可采用其它技术。例如,每个微电子元件36可以是包含有端子在上面的封装基板(未示出)的封装微电子元件,这些端子连接到下部基板上的传导连接元件30。在又另一变体中,可采用诸如非均质传导粘结剂的技术。上部模制件38覆盖每个微电子元件36露出的表面。在其它实施例中,省略了上部模制件38。下部基板的每个区域26内的微电子元件36通过该区域的传导连接元件30电连接到该区域的安装端子28的至少一些上、连接到该区域的层间连接端子29的至少一些上或连接到两者上。微电子元件36可用常规技术安装在下部基板上,或者作为在此描述的组装过程的一部分或这在分开的操作中用于准备下部基板20。
根据本发明该实施例的过程还使用包括电介质层41的上部基板40,其可由上述相同材料形成,连接下部电介质层,限定上部表面42和下部表面44。上部基板具有在下部表面44上露出的层间连接端子49和在上部表面露出的传导安装端子50。在这里,这些特征示出为双层结构,但是可由单层或多层形成,这些特征通过电介质层上的孔露出在两表面中的一个或两个上。上部基板40还具有多个区域46,每个这种区域包括一系列层间连接端子49和一系列安装端子50,至少一些安装端子50电连接到该区域的至少一些层间连接端子49上。
在组装过程中,上面有微电子元件36的下部基板20与上部基板40结合成一体,使得上部基板40的下部表面44搁在微电子元件36上并面向下部基板。这样,微电子元件36设置在两基板之间。粘结剂52涂敷在上部基板的下部表面44上,该上部基板在微电子元件36的远离下部基板的表面上,这些表面可以是环绕每个微电子元件的密封剂38限定的表面。将基板彼此组装的过程最佳地在两基板保持包含多个区域26和46的大基板的形式的同时进行。例如,在基板是细长带或条形式时,基板可通过一对轧辊或通过挤压改进,以使上部基板与下部基板上的微电子元件36的表面啮合。或者,在两基板都是诸如大圆形或方形薄片之类的大薄片形式时,组装过程可进通过将一个薄片放置在另一薄片上进行,以将基板彼此组装。该基板彼此组装使得上部基板的每个区域46与下部基板20的相应区域26对齐。
在将基板彼此组装后,下部基板每个区域的层互连端子29与上部基板相应区域的层互连端子49连接。该连接通过在层互连端子之间应用丝焊形成。丝焊延伸穿过下部基板上的小孔34。在丝焊之后,与每个下部区域相关联的至少一些下部安装端子28,或者芯片36上的至少一些触点,通过丝焊和层互连端子连接到上部基板相应区域的至少一些安装端子50。
在应用丝焊之后,在下部基板20和上部基板10之间引入密封剂54(图4)。密封剂可以是任何与构造材料兼容的易流动的密封剂。最理想地,密封剂54是可定位材料,其在未处理状态下是粘度相对低的液体,且其可处理成固体或半固体状态。这种材料的实例包括环氧化物、硅树脂以及在微电子封装中通常采用作为密封剂的其它材料。这些材料通过化学反应处理,通常通过加热改进。可使用加热液化并通过冷却处理成固体状态的诸如热塑材料的其它密封剂。该密封剂可通过任何适当过程注入基板之间。在注射密封剂时,一些密封剂可通过下部基板上的小孔34(图3)逸出。这些基板可在密封剂注入时约束在模子或其它固定设备的构件之间,且这些构件可密封下部基板上的开口34。替代地或另外地,下部基板上的开口34可由诸如在丝焊后涂敷在开口上方的焊料掩模之类的电介质膜覆盖。可在该步骤采用共同转让的美国专利6,329,224和5,766,987中讲授的该技术,其内容援引于此以供参考。密封剂诸如步骤理想地也在基板40和20保持在它们初始形式的同时进行,使得每个基板的各区域在该阶段保持彼此连接。密封剂环绕丝焊53(图3)并理想地基本上或完全填充出了微电子元件本身粘结的空间之外的上部和下部基板之间的空间。
在密封剂注入和处理之后,将一个或多个附加微电子元件56安装在上部基板40露出的顶部表面42上,并与上部基板的安装端子50电连接。这里,微电子元件56安装在上部基板的各区域46上。诸如焊球58之类的导电粘结材料可涂敷在下部基板的安装端子28上。附加微电子元件56可以是“裸的”或未封装的半导体芯片或其它微电子元件,或者可以是诸如封装的半导体芯片之类的封装微电子元件。在所示实施例中,每个附加微电子元件通过直接将微电子元件上的触点粘结到上部基板的安装元件50上安装。但是,也可使用其它安装和连接技术。例如,在一变体中,附加微电子元件56可以以面向上的配置安装在上部基板上并通过丝焊连接到安装元件50上。同样,密封剂和其它覆盖物可涂敷到附加微电子元件上方。
在安装附加微电子元件56和导电粘结材料58之后,上部和下部基板用于形成单个单元60(图6)。每个这样的单元包括下部基板的一个区域26和上部基板的相应区域46,以及下部基板上的微电子元件36和上部基板上附加微电子元件56。每个这样的单元是自包含堆叠封装。每个单元60形成完全堆叠封装,有一个或多个附加电子元件56连接到一个或多个微电子元件36。这样的封装可以与基本上常规单元件微电子封装件相同的方式安装在电路板上或其它较大基板上。
在上述过程的变体中,切断后,附加的微电子元件26、连接粘结材料58或两者都可安装到基板上。组装的基板或微电子元件36,有或没有粘结材料58,在未切断状态或分开的、切断的单元,可作为商业半成品进行处理、运载和存储。这种设置可用于例如同样的微电子元件36包含进大量的封装件,但不同的附加元件56用于不同的封装件的情况。
在又另一变体中,可省略密封剂54。在该变体中,微电子元件36设置在基板之间提供结构支撑。附加结构支撑可通过提供在电子元件之间未被微电子元件36或丝焊53占据的位置延伸的间隔件而设置在基板之间。
根据本发明又一实施例的过程使用参照图1-6与上述类似的下部基板120和上部基板140。但是,安装在下部基板120上的微电子元件136面向上布置安装,而没有上部模制件。在上部基板140组装之前,微电子元件136上的触点通过丝焊102电连接到下部基板120的上部表面上的导电安装元件130。间隔件104设置在微电子元件136面向上的表面上或在上部基板140的下部表面上,以将上部基板保持在丝焊102上方。间隔件104理想地由电介质材料形成,且可包括或由粘合层组成。这里,下部基板的层间连接端子129通过丝焊152连接到上部基板的层间连接衬垫149上。在丝焊之后,如图7所示的组件可与参照图4-6上述同样的方式进行处理和操作。
根据本发明的又另一实施例的过程,同样利用与上述的类似的下部基板220和上部基板240。微电子元件236安装在下部基板220的上部表面222上。理想地,这些微电子元件通过环绕每个微电子元件的上部模制件238覆盖。这里,微电子元件236可以是封装件或未封装元件。但是,在图8的实施例中,下部基板的层间连接端子229露出在基板的上部表面222,然而上部基板的层间连接端子249露出在上部基板的下部表面244。这些基板以与上述类似的方式彼此组装。但是,诸如焊球之类的导电间隔件设置在基板之间下部基板层间连接端子229上或上部基板的层间连接端子249上。当基板彼此组装时,传导元件与相对基板上的层间连接端子啮合并粘结到其上。这样,传导元件202提供基板之间的电连接并提供基板之间的物理间隔。附加微电子元件256可在组装之前或之后安装到上部基板上。如上述其它实施例那样,组装步骤可在单次操作中用于将上部基板的无数区域与下部基板的无数区域相互连接。如上述实施例中那样,互连的基板可用于形成单个单元。密封剂(未示出)可以可选地以上述方式注入基板之间,理想地在切断基板之前。在另一变体(图9)中,下部基板320上的微电子元件336是未用密封剂的“裸的”半导体芯片。这些芯片用类似于参照图7的上述丝焊丝焊到下部基板的传导安装部件330上。上部基板340组装到下部基板上并通过类似于参照图8上述的传导元件304连接到下部基板上。理想地,在用基板形成单个单元之前,密封剂354(图10)注入基板之间。可在各实施例中采用除了焊球之外的传导元件。例如,如PCT公开国际专利申请WO2004/077525揭示的那样,其内容援引于此以供参考,细长隆起或插脚形式的金属传导元件可用作堆叠封装件中的单元件连接件。
如2004年6月25日提交的美国临时专利申请第60/583,066,号所阐述的那样,其内容也援引于此,同于2003年12月30日提交的共同待审查、共同转让的美国临时专利申请60/533,210、60/533,393和60/533,437(其内容援引于此以供参考)所揭示类型的插脚可用作堆叠封装件内的单元间连接。这些和其它类型的插脚可用在上述组件中。两基板中的一个或两个可在组装前设以这些插脚,使得插脚与相对基板上的层间连接端子啮合。
根据本发明又另一实施例的过程利用包含电介质层421的单金属条形式的上部基板440,有由条的下部表面上的单层金属特征限定的上部安装端子450和层间连接端子449,安装端子450通过电介质层上的孔451暴露于上部基板的上部表面422。包括无数引线452的引线框附连到上部基板440上以使得每根引线452从层间连接端子449之一延伸,如图12所示。尽管图中仅示出两根引线452,应当理解,引线框包括无数引线,并还可包括总线杆或其它元件以将引线相对于彼此保持在位置上。可在引线框装到上部基板之后将总线杆或其它保持元件移除。可使用2003年12月24日提交的共同待审查、共同转让的美国专利申请第10/746,810号中讲授的那种类型的引线框,其内容援引于此以供参考。引线框可通过诸如焊料粘结、扩散粘结、热压缩粘结等粘结到上部基板的层间连接端子449上。或者,层间连接端子449可制成条自动粘结(tape-automated bonding)(″TAB″)引线,且这些引线可用使用类似于通常用于将TAB引线粘结到诸如半导体芯片上的元件的处理粘结到引线框上。如图12所清楚示出的,引线框的引线452从上部基板440向下突出。该过程还利用下部基板420,其在其下部表面424有露出的下部安装端子428,并在其上部表面有露出的电子连接件430和也在其上部表面442露出的层间连接端子429。这里,在图13所示的特别实施例中,下部基板示出为“双金属”结构,但可以是单金属结构,该单金属结构具有通过下部基板的电介质元件421上的孔露出的各种特征。半导体芯片或其它微电子元件436装在下部基板420上。在所示实施例中,半导体芯片436面向上布置安装并通过丝焊402连接到连接端子430。但是,芯片436也可面向下安装。在另一变体中,芯片436可以是封装芯片或其它封装微电子元件。在图13所示的特别实施例中,芯片436通过间隔件404支撑在下部基板的电介质元件421上方。在另一变体中,间隔件404可用另一可面向下或面向上安装的半导体芯片或其它微电子元件替代。理想地由电介质材料形成的间隔件406设置在远离下部基板420的微电子元件436的表面上。
包括上部基板440和引线框的引线452的子组件通过将子组件朝向下部基板推进和使用任何上述技术将引线452远离上部基板441的下端粘结到下部基板的层间连接端子429而安装到下部基板上。在上部和下部基板组装后,形成的单元包括下部基板420、上部基板440、微电子元件436和连接上部和下部基板的引线452,该单元例如通过环绕微电子元件436和在基板420和440之间引入的易流动密封剂而被密封。进行密封过程以使上部安装端子450和下部安装端子露出并不被密封剂454覆盖。参照图11-14的上述所有步骤可使用单个上部和下部基板和/或单个引线框进行,或可在上部基板、下部基板和引线框或这些的任意组合在诸如包含无数基板和/或无数引线框的带或条之类的较大组件形式的同时进行。这种情况下,较大元件如上所述切断,以形成单个单元,各包括下部基板、上部基板以及一个或多个微电子元件436。这里,较大单元在切断之前可作为商业产品处理、运载和存储。同样,单个单元也可这样处理。这里,封装或未封装附加电子元件456可例如通过如图14所示的焊料粘结,或通过丝焊安装到上部安装端子上。下部安装端子428可设有诸如焊球408之类的导电粘结材料并可用于将完成的组件安装到电路配电板上。
在上述的每个实施例中,上部和下部基板的位置可翻转。例如,如图14所示的上部安装端子450可用于将组件安装到电路配电板上,而下部安装端子428可用于将另一微电子元件安装到该组件上。同样,引线框的引线452可组装到下部基板上而不是上部基板上。在又另一实施例中,整个上部基板可仅由引线框组成。用于互连各引线并形成自支撑引线框的引线框的总线杆或其它部分可在密封后移除。反之,下部基板420可用引线框的元件替代。在一变体中,引线框远离上部基板的端部露出以使这些端部用作组件的下部安装端子。
如本文中所使用的诸如“上部”、“下部”、“向上”以及“向下”之类的术语以及类似表示方向的术语,指部件本身的参照系,而不是重力参照系。用重力参照系中定向的部件在图中所示的方向中,重力参照系中图的顶部是上而图的底部是下,上部基板实际上在重力参照系中在下部基板的上方。但是当部件翻转时,图的顶部在重力参照系中面向下,重力参照系中上部基板在下部基板下方。
优选实施例中的前述说明意味着说明而不是限制本发明。
由于可使用上述特征的这些和其它变体以及组合而不偏离权利要求书限定的本发明,应当通过说明的方式而不是限制权利要求书限定的本发明的方式采用优选实施例的前述说明。
Claims (10)
1.一种制造多个微电子组件的方法,包括以下步骤:
(a)提供加工过程中的单元,该单元包括多个微电子元件、在所述微电子元件上方延伸的至少一个上部基板以及在所述微电子元件下方延伸的至少一个下部基板,所述基板中的至少一个包括多个区域;以及然后
(b)切割所述加工过程中的单元以形成单独的单元,每个所述单元均包括所述基板中的所述至少一个和所述微电子元件中的至少一个中的每一个的一区域。
2.如权利要求1所述的方法,其特征在于,所述上部基板和所述下部基板都包括多个区域,且进行所述切割使得每个所述单元包括所述上部基板的一部分、所述下部基板的一部分和设置在所述基板之间的多个微电子元件中的一个。
3.如权利要求2所述的方法,其特征在于,还包括将所述上部和下部基板上的传导元件相互电连接的步骤。
4.如权利要求3所述的方法,其特征在于,所述电连接的步骤在所述切割步骤之前进行。
5.如权利要求4所述的方法,其特征在于,还包括在所述切断步骤之前将密封剂注入所述上部和下部基板之间的步骤。
6.一种加工过程中的单元,包括上部和下部基板以及设置在所述上部和下部基板之间的多个微电子元件,每个所述基板包括多个区域,所述上部基板的每个区域与所述下部基板的相应区域对齐,使得至少一个所述微电子单元设置在其间,所述上部和下部基板的所述区域各具有导电元件,所述上部基板的每个所述区域的至少一些所述导电元件电连接到所述下部基板相应区域的导电元件。
7.如权利要求6所述的加工过程中的单元,其特征在于,还包括设置在所述上部和下部基板之间的密封剂。
8.一种制造微电子组件的方法,包括将引线框附连到第一基板上,使得所述引线框的引线从所述基板突出并将所述第一基板与第二基板组装使得至少一个微电子元件设置在所述第一和第二基板之间,并将所述引线连接到所述第二基板上。
9.如权利要求8所述的方法,其特征在于,还包括在所述组装步骤之前将所述至少一个微电子元件电连接到所述基板之一的步骤。
10.如权利要求9所述的方法,其特征在于,在所述组装步骤之前进行所述电连接步骤,以将所述至少一个微电子元件连接到所述第二基板。
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US (5) | US8525314B2 (zh) |
JP (2) | JP5592055B2 (zh) |
KR (1) | KR101313391B1 (zh) |
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Families Citing this family (62)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8525314B2 (en) | 2004-11-03 | 2013-09-03 | Tessera, Inc. | Stacked packaging improvements |
JPWO2007069606A1 (ja) | 2005-12-14 | 2009-05-21 | 新光電気工業株式会社 | チップ内蔵基板の製造方法 |
US8058101B2 (en) | 2005-12-23 | 2011-11-15 | Tessera, Inc. | Microelectronic packages and methods therefor |
US8129225B2 (en) | 2007-08-10 | 2012-03-06 | Infineon Technologies Ag | Method of manufacturing an integrated circuit module |
KR100913722B1 (ko) | 2008-02-13 | 2009-08-24 | 전자부품연구원 | 멀티 칩 패키지 및 그 제조방법 |
US20100187651A1 (en) | 2009-01-26 | 2010-07-29 | Stmicroelectronics Asia Pacific Pte Ltd. | Integrated circuit package and method of forming the same |
EP2290683A1 (en) * | 2009-08-27 | 2011-03-02 | ABB Research Ltd | Wiring of an electronic module |
US9159708B2 (en) | 2010-07-19 | 2015-10-13 | Tessera, Inc. | Stackable molded microelectronic packages with area array unit connectors |
US8482111B2 (en) | 2010-07-19 | 2013-07-09 | Tessera, Inc. | Stackable molded microelectronic packages |
KR101075241B1 (ko) | 2010-11-15 | 2011-11-01 | 테세라, 인코포레이티드 | 유전체 부재에 단자를 구비하는 마이크로전자 패키지 |
US20120146206A1 (en) | 2010-12-13 | 2012-06-14 | Tessera Research Llc | Pin attachment |
KR101128063B1 (ko) | 2011-05-03 | 2012-04-23 | 테세라, 인코포레이티드 | 캡슐화 층의 표면에 와이어 본드를 구비하는 패키지 적층형 어셈블리 |
US8618659B2 (en) | 2011-05-03 | 2013-12-31 | Tessera, Inc. | Package-on-package assembly with wire bonds to encapsulation surface |
US8872318B2 (en) | 2011-08-24 | 2014-10-28 | Tessera, Inc. | Through interposer wire bond using low CTE interposer with coarse slot apertures |
US8404520B1 (en) | 2011-10-17 | 2013-03-26 | Invensas Corporation | Package-on-package assembly with wire bond vias |
US8680684B2 (en) | 2012-01-09 | 2014-03-25 | Invensas Corporation | Stackable microelectronic package structures |
US8946757B2 (en) | 2012-02-17 | 2015-02-03 | Invensas Corporation | Heat spreading substrate with embedded interconnects |
US9349706B2 (en) | 2012-02-24 | 2016-05-24 | Invensas Corporation | Method for package-on-package assembly with wire bonds to encapsulation surface |
US8372741B1 (en) | 2012-02-24 | 2013-02-12 | Invensas Corporation | Method for package-on-package assembly with wire bonds to encapsulation surface |
US8835228B2 (en) | 2012-05-22 | 2014-09-16 | Invensas Corporation | Substrate-less stackable package with wire-bond interconnect |
US9391008B2 (en) | 2012-07-31 | 2016-07-12 | Invensas Corporation | Reconstituted wafer-level package DRAM |
US9502390B2 (en) | 2012-08-03 | 2016-11-22 | Invensas Corporation | BVA interposer |
US8975738B2 (en) | 2012-11-12 | 2015-03-10 | Invensas Corporation | Structure for microelectronic packaging with terminals on dielectric mass |
US8878353B2 (en) | 2012-12-20 | 2014-11-04 | Invensas Corporation | Structure for microelectronic packaging with bond elements to encapsulation surface |
US9136254B2 (en) | 2013-02-01 | 2015-09-15 | Invensas Corporation | Microelectronic package having wire bond vias and stiffening layer |
US8970023B2 (en) * | 2013-02-04 | 2015-03-03 | Taiwan Semiconductor Manufacturing Company, Ltd. | Package structure and methods of forming same |
US8883563B1 (en) | 2013-07-15 | 2014-11-11 | Invensas Corporation | Fabrication of microelectronic assemblies having stack terminals coupled by connectors extending through encapsulation |
US9034696B2 (en) | 2013-07-15 | 2015-05-19 | Invensas Corporation | Microelectronic assemblies having reinforcing collars on connectors extending through encapsulation |
US9023691B2 (en) | 2013-07-15 | 2015-05-05 | Invensas Corporation | Microelectronic assemblies with stack terminals coupled by connectors extending through encapsulation |
US9167710B2 (en) | 2013-08-07 | 2015-10-20 | Invensas Corporation | Embedded packaging with preformed vias |
US9685365B2 (en) | 2013-08-08 | 2017-06-20 | Invensas Corporation | Method of forming a wire bond having a free end |
US20150076714A1 (en) | 2013-09-16 | 2015-03-19 | Invensas Corporation | Microelectronic element with bond elements to encapsulation surface |
US9087815B2 (en) | 2013-11-12 | 2015-07-21 | Invensas Corporation | Off substrate kinking of bond wire |
US9082753B2 (en) | 2013-11-12 | 2015-07-14 | Invensas Corporation | Severing bond wire by kinking and twisting |
US9263394B2 (en) | 2013-11-22 | 2016-02-16 | Invensas Corporation | Multiple bond via arrays of different wire heights on a same substrate |
US9583456B2 (en) | 2013-11-22 | 2017-02-28 | Invensas Corporation | Multiple bond via arrays of different wire heights on a same substrate |
US9379074B2 (en) | 2013-11-22 | 2016-06-28 | Invensas Corporation | Die stacks with one or more bond via arrays of wire bond wires and with one or more arrays of bump interconnects |
US9583411B2 (en) | 2014-01-17 | 2017-02-28 | Invensas Corporation | Fine pitch BVA using reconstituted wafer with area array accessible for testing |
US9653442B2 (en) | 2014-01-17 | 2017-05-16 | Taiwan Semiconductor Manufacturing Company, Ltd. | Integrated circuit package and methods of forming same |
US9214454B2 (en) | 2014-03-31 | 2015-12-15 | Invensas Corporation | Batch process fabrication of package-on-package microelectronic assemblies |
US10381326B2 (en) | 2014-05-28 | 2019-08-13 | Invensas Corporation | Structure and method for integrated circuits packaging with increased density |
US9646917B2 (en) | 2014-05-29 | 2017-05-09 | Invensas Corporation | Low CTE component with wire bond interconnects |
US9412714B2 (en) | 2014-05-30 | 2016-08-09 | Invensas Corporation | Wire bond support structure and microelectronic package including wire bonds therefrom |
US9735084B2 (en) | 2014-12-11 | 2017-08-15 | Invensas Corporation | Bond via array for thermal conductivity |
WO2016123607A2 (en) | 2015-01-30 | 2016-08-04 | Invensas Corporation | Contact arrangements for stackable microelectronic package structures |
US9888579B2 (en) | 2015-03-05 | 2018-02-06 | Invensas Corporation | Pressing of wire bond wire tips to provide bent-over tips |
KR101605172B1 (ko) * | 2015-04-07 | 2016-03-22 | 삼성전자주식회사 | 패키지 기판 및 그 제조방법 |
US9502372B1 (en) | 2015-04-30 | 2016-11-22 | Invensas Corporation | Wafer-level packaging using wire bond wires in place of a redistribution layer |
US9761554B2 (en) | 2015-05-07 | 2017-09-12 | Invensas Corporation | Ball bonding metal wire bond wires to metal pads |
US9842831B2 (en) | 2015-05-14 | 2017-12-12 | Mediatek Inc. | Semiconductor package and fabrication method thereof |
US10685943B2 (en) | 2015-05-14 | 2020-06-16 | Mediatek Inc. | Semiconductor chip package with resilient conductive paste post and fabrication method thereof |
US10490528B2 (en) | 2015-10-12 | 2019-11-26 | Invensas Corporation | Embedded wire bond wires |
US9490222B1 (en) | 2015-10-12 | 2016-11-08 | Invensas Corporation | Wire bond wires for interference shielding |
US10332854B2 (en) | 2015-10-23 | 2019-06-25 | Invensas Corporation | Anchoring structure of fine pitch bva |
US10181457B2 (en) | 2015-10-26 | 2019-01-15 | Invensas Corporation | Microelectronic package for wafer-level chip scale packaging with fan-out |
US10043779B2 (en) | 2015-11-17 | 2018-08-07 | Invensas Corporation | Packaged microelectronic device for a package-on-package device |
US9659848B1 (en) | 2015-11-18 | 2017-05-23 | Invensas Corporation | Stiffened wires for offset BVA |
US9984992B2 (en) | 2015-12-30 | 2018-05-29 | Invensas Corporation | Embedded wire bond wires for vertical integration with separate surface mount and wire bond mounting surfaces |
CN106205161B (zh) * | 2016-07-09 | 2018-09-18 | 腾讯科技(深圳)有限公司 | 路况信息传输方法和装置 |
US9935075B2 (en) | 2016-07-29 | 2018-04-03 | Invensas Corporation | Wire bonding method and apparatus for electromagnetic interference shielding |
US10299368B2 (en) | 2016-12-21 | 2019-05-21 | Invensas Corporation | Surface integrated waveguides and circuit structures therefor |
IT201700055983A1 (it) | 2017-05-23 | 2018-11-23 | St Microelectronics Srl | Procedimento per produrre dispositivi a semiconduttore, dispositivo a semiconduttore e circuito corrispondenti |
Family Cites Families (530)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE1439262B2 (de) | 1963-07-23 | 1972-03-30 | Siemens AG, 1000 Berlin u. 8000 München | Verfahren zum kontaktieren von halbleiterbauelementen durch thermokompression |
US3358897A (en) | 1964-03-31 | 1967-12-19 | Tempress Res Co | Electric lead wire bonding tools |
US3430835A (en) | 1966-06-07 | 1969-03-04 | Westinghouse Electric Corp | Wire bonding apparatus for microelectronic components |
US3623649A (en) | 1969-06-09 | 1971-11-30 | Gen Motors Corp | Wedge bonding tool for the attachment of semiconductor leads |
DE2119567C2 (de) | 1970-05-05 | 1983-07-14 | International Computers Ltd., London | Elektrische Verbindungsvorrichtung und Verfahren zu ihrer Herstellung |
DE2228703A1 (de) | 1972-06-13 | 1974-01-10 | Licentia Gmbh | Verfahren zum herstellen einer vorgegebenen lotschichtstaerke bei der fertigung von halbleiterbauelementen |
JPS5150661Y2 (zh) | 1972-11-22 | 1976-12-06 | ||
US4067104A (en) | 1977-02-24 | 1978-01-10 | Rockwell International Corporation | Method of fabricating an array of flexible metallic interconnects for coupling microelectronics components |
US4213556A (en) | 1978-10-02 | 1980-07-22 | General Motors Corporation | Method and apparatus to detect automatic wire bonder failure |
US4327860A (en) | 1980-01-03 | 1982-05-04 | Kulicke And Soffa Ind. Inc. | Method of making slack free wire interconnections |
US4422568A (en) | 1981-01-12 | 1983-12-27 | Kulicke And Soffa Industries, Inc. | Method of making constant bonding wire tail lengths |
US4437604A (en) | 1982-03-15 | 1984-03-20 | Kulicke & Soffa Industries, Inc. | Method of making fine wire interconnections |
JPS59189069U (ja) | 1983-06-02 | 1984-12-14 | 昭和アルミニウム株式会社 | 冷却装置 |
JPS61125062A (ja) | 1984-11-22 | 1986-06-12 | Hitachi Ltd | ピン取付け方法およびピン取付け装置 |
US4604644A (en) | 1985-01-28 | 1986-08-05 | International Business Machines Corporation | Solder interconnection structure for joining semiconductor devices to substrates that have improved fatigue life, and process for making |
US4642889A (en) | 1985-04-29 | 1987-02-17 | Amp Incorporated | Compliant interconnection and method therefor |
JP2608701B2 (ja) | 1985-09-19 | 1997-05-14 | 三菱電機株式会社 | 保護装置の点検回路 |
US5917707A (en) * | 1993-11-16 | 1999-06-29 | Formfactor, Inc. | Flexible contact structure with an electrically conductive shell |
US5476211A (en) | 1993-11-16 | 1995-12-19 | Form Factor, Inc. | Method of manufacturing electrical contacts, using a sacrificial member |
US4716049A (en) | 1985-12-20 | 1987-12-29 | Hughes Aircraft Company | Compressive pedestal for microminiature connections |
US4924353A (en) | 1985-12-20 | 1990-05-08 | Hughes Aircraft Company | Connector system for coupling to an integrated circuit chip |
JPS62158338A (ja) | 1985-12-28 | 1987-07-14 | Tanaka Denshi Kogyo Kk | 半導体装置 |
US4793814A (en) | 1986-07-21 | 1988-12-27 | Rogers Corporation | Electrical circuit board interconnect |
US4695870A (en) | 1986-03-27 | 1987-09-22 | Hughes Aircraft Company | Inverted chip carrier |
JPS62226307A (ja) | 1986-03-28 | 1987-10-05 | Toshiba Corp | ロボツト装置 |
US4771930A (en) | 1986-06-30 | 1988-09-20 | Kulicke And Soffa Industries Inc. | Apparatus for supplying uniform tail lengths |
JPH07122787B2 (ja) | 1986-09-30 | 1995-12-25 | カシオ計算機株式会社 | 連綿文字作成装置 |
JPS6397941A (ja) | 1986-10-14 | 1988-04-28 | Fuji Photo Film Co Ltd | 感光材料 |
US4955523A (en) | 1986-12-17 | 1990-09-11 | Raychem Corporation | Interconnection of electronic components |
DE3703694A1 (de) | 1987-02-06 | 1988-08-18 | Dynapert Delvotec Gmbh | Ball-bondverfahren und vorrichtung zur durchfuehrung derselben |
US5138438A (en) | 1987-06-24 | 1992-08-11 | Akita Electronics Co. Ltd. | Lead connections means for stacked tab packaged IC chips |
JP2642359B2 (ja) | 1987-09-11 | 1997-08-20 | 株式会社日立製作所 | 半導体装置 |
KR970003915B1 (ko) | 1987-06-24 | 1997-03-22 | 미다 가쓰시게 | 반도체 기억장치 및 그것을 사용한 반도체 메모리 모듈 |
US4804132A (en) | 1987-08-28 | 1989-02-14 | Difrancesco Louis | Method for cold bonding |
US4845354A (en) | 1988-03-08 | 1989-07-04 | International Business Machines Corporation | Process control for laser wire bonding |
JPH01313969A (ja) | 1988-06-13 | 1989-12-19 | Hitachi Ltd | 半導体装置 |
US4998885A (en) | 1989-10-27 | 1991-03-12 | International Business Machines Corporation | Elastomeric area array interposer |
US5077598A (en) | 1989-11-08 | 1991-12-31 | Hewlett-Packard Company | Strain relief flip-chip integrated circuit assembly with test fixturing |
US5095187A (en) | 1989-12-20 | 1992-03-10 | Raychem Corporation | Weakening wire supplied through a wire bonder |
CA2034703A1 (en) | 1990-01-23 | 1991-07-24 | Masanori Nishiguchi | Substrate for packaging a semiconductor device |
AU637874B2 (en) | 1990-01-23 | 1993-06-10 | Sumitomo Electric Industries, Ltd. | Substrate for packaging a semiconductor device |
US5376403A (en) | 1990-02-09 | 1994-12-27 | Capote; Miguel A. | Electrically conductive compositions and methods for the preparation and use thereof |
US5948533A (en) | 1990-02-09 | 1999-09-07 | Ormet Corporation | Vertically interconnected electronic assemblies and compositions useful therefor |
US5083697A (en) | 1990-02-14 | 1992-01-28 | Difrancesco Louis | Particle-enhanced joining of metal surfaces |
US4975079A (en) | 1990-02-23 | 1990-12-04 | International Business Machines Corp. | Connector assembly for chip testing |
US4999472A (en) | 1990-03-12 | 1991-03-12 | Neinast James E | Electric arc system for ablating a surface coating |
US5241456A (en) | 1990-07-02 | 1993-08-31 | General Electric Company | Compact high density interconnect structure |
US5148266A (en) | 1990-09-24 | 1992-09-15 | Ist Associates, Inc. | Semiconductor chip assemblies having interposer and flexible lead |
US5679977A (en) | 1990-09-24 | 1997-10-21 | Tessera, Inc. | Semiconductor chip assemblies, methods of making same and components for same |
US5148265A (en) | 1990-09-24 | 1992-09-15 | Ist Associates, Inc. | Semiconductor chip assemblies with fan-in leads |
US5067382A (en) | 1990-11-02 | 1991-11-26 | Cray Computer Corporation | Method and apparatus for notching a lead wire attached to an IC chip to facilitate severing the wire |
KR940001149B1 (ko) | 1991-04-16 | 1994-02-14 | 삼성전자 주식회사 | 반도체 장치의 칩 본딩 방법 |
JPH04346436A (ja) | 1991-05-24 | 1992-12-02 | Fujitsu Ltd | バンプ製造方法とバンプ製造装置 |
US5316788A (en) * | 1991-07-26 | 1994-05-31 | International Business Machines Corporation | Applying solder to high density substrates |
US5203075A (en) | 1991-08-12 | 1993-04-20 | Inernational Business Machines | Method of bonding flexible circuit to cicuitized substrate to provide electrical connection therebetween using different solders |
US5133495A (en) | 1991-08-12 | 1992-07-28 | International Business Machines Corporation | Method of bonding flexible circuit to circuitized substrate to provide electrical connection therebetween |
WO1993004375A1 (en) | 1991-08-23 | 1993-03-04 | Nchip, Inc. | Burn-in technologies for unpackaged integrated circuits |
US5220489A (en) | 1991-10-11 | 1993-06-15 | Motorola, Inc. | Multicomponent integrated circuit package |
US5238173A (en) | 1991-12-04 | 1993-08-24 | Kaijo Corporation | Wire bonding misattachment detection apparatus and that detection method in a wire bonder |
JP2931936B2 (ja) | 1992-01-17 | 1999-08-09 | 株式会社日立製作所 | 半導体装置用リードフレームの製造方法及び半導体装置用リードフレーム並びに樹脂封止型半導体装置 |
US5831836A (en) | 1992-01-30 | 1998-11-03 | Lsi Logic | Power plane for semiconductor device |
US5222014A (en) | 1992-03-02 | 1993-06-22 | Motorola, Inc. | Three-dimensional multi-chip pad array carrier |
US5438224A (en) | 1992-04-23 | 1995-08-01 | Motorola, Inc. | Integrated circuit package having a face-to-face IC chip arrangement |
US5494667A (en) | 1992-06-04 | 1996-02-27 | Kabushiki Kaisha Hayahibara | Topically applied hair restorer containing pine extract |
WO1994003036A1 (en) | 1992-07-24 | 1994-02-03 | Tessera, Inc. | Semiconductor connection components and methods with releasable lead support |
US6054756A (en) | 1992-07-24 | 2000-04-25 | Tessera, Inc. | Connection components with frangible leads and bus |
US5977618A (en) | 1992-07-24 | 1999-11-02 | Tessera, Inc. | Semiconductor connection components and methods with releasable lead support |
US5371654A (en) | 1992-10-19 | 1994-12-06 | International Business Machines Corporation | Three dimensional high performance interconnection package |
US6295729B1 (en) | 1992-10-19 | 2001-10-02 | International Business Machines Corporation | Angled flying lead wire bonding process |
US20050062492A1 (en) | 2001-08-03 | 2005-03-24 | Beaman Brian Samuel | High density integrated circuit apparatus, test probe and methods of use thereof |
JP2716336B2 (ja) * | 1993-03-10 | 1998-02-18 | 日本電気株式会社 | 集積回路装置 |
JPH06268101A (ja) | 1993-03-17 | 1994-09-22 | Hitachi Ltd | 半導体装置及びその製造方法、電子装置、リ−ドフレ−ム並びに実装基板 |
US5340771A (en) * | 1993-03-18 | 1994-08-23 | Lsi Logic Corporation | Techniques for providing high I/O count connections to semiconductor dies |
US7368924B2 (en) | 1993-04-30 | 2008-05-06 | International Business Machines Corporation | Probe structure having a plurality of discrete insulated probe tips projecting from a support surface, apparatus for use thereof and methods of fabrication thereof |
US20030048108A1 (en) | 1993-04-30 | 2003-03-13 | Beaman Brian Samuel | Structural design and processes to control probe position accuracy in a wafer test probe assembly |
US5811982A (en) | 1995-11-27 | 1998-09-22 | International Business Machines Corporation | High density cantilevered probe for electronic devices |
JP2981385B2 (ja) * | 1993-09-06 | 1999-11-22 | シャープ株式会社 | チップ部品型ledの構造及びその製造方法 |
US5346118A (en) | 1993-09-28 | 1994-09-13 | At&T Bell Laboratories | Surface mount solder assembly of leadless integrated circuit packages to substrates |
US6835898B2 (en) | 1993-11-16 | 2004-12-28 | Formfactor, Inc. | Electrical contact structures formed by configuring a flexible wire to have a springable shape and overcoating the wire with at least one layer of a resilient conductive material, methods of mounting the contact structures to electronic components, and applications for employing the contact structures |
US5455390A (en) | 1994-02-01 | 1995-10-03 | Tessera, Inc. | Microelectronics unit mounting with multiple lead bonding |
EP0751561A4 (en) | 1994-03-18 | 1997-05-07 | Hitachi Chemical Co Ltd | PROCESS FOR MANUFACTURING SEMICONDUCTOR PACKAGES AND SEMICONDUCTOR PACKAGES |
US5615824A (en) | 1994-06-07 | 1997-04-01 | Tessera, Inc. | Soldering with resilient contacts |
US5802699A (en) | 1994-06-07 | 1998-09-08 | Tessera, Inc. | Methods of assembling microelectronic assembly with socket for engaging bump leads |
JPH07335783A (ja) | 1994-06-13 | 1995-12-22 | Fujitsu Ltd | 半導体装置及び半導体装置ユニット |
US5468995A (en) | 1994-07-05 | 1995-11-21 | Motorola, Inc. | Semiconductor device having compliant columnar electrical connections |
US5989936A (en) | 1994-07-07 | 1999-11-23 | Tessera, Inc. | Microelectronic assembly fabrication with terminal formation from a conductive layer |
US5688716A (en) | 1994-07-07 | 1997-11-18 | Tessera, Inc. | Fan-out semiconductor chip assembly |
US6177636B1 (en) | 1994-12-29 | 2001-01-23 | Tessera, Inc. | Connection components with posts |
US6117694A (en) | 1994-07-07 | 2000-09-12 | Tessera, Inc. | Flexible lead structures and methods of making same |
US5518964A (en) | 1994-07-07 | 1996-05-21 | Tessera, Inc. | Microelectronic mounting with multiple lead deformation and bonding |
US6828668B2 (en) | 1994-07-07 | 2004-12-07 | Tessera, Inc. | Flexible lead structures and methods of making same |
US5656550A (en) | 1994-08-24 | 1997-08-12 | Fujitsu Limited | Method of producing a semicondutor device having a lead portion with outer connecting terminal |
US5659952A (en) | 1994-09-20 | 1997-08-26 | Tessera, Inc. | Method of fabricating compliant interface for semiconductor chip |
US5541567A (en) | 1994-10-17 | 1996-07-30 | International Business Machines Corporation | Coaxial vias in an electronic substrate |
US5495667A (en) | 1994-11-07 | 1996-03-05 | Micron Technology, Inc. | Method for forming contact pins for semiconductor dice and interconnects |
US5736074A (en) | 1995-06-30 | 1998-04-07 | Micro Fab Technologies, Inc. | Manufacture of coated spheres |
US5971253A (en) | 1995-07-31 | 1999-10-26 | Tessera, Inc. | Microelectronic component mounting with deformable shell terminals |
US5872051A (en) | 1995-08-02 | 1999-02-16 | International Business Machines Corporation | Process for transferring material to semiconductor chip conductive pads using a transfer substrate |
US5810609A (en) | 1995-08-28 | 1998-09-22 | Tessera, Inc. | Socket for engaging bump leads on a microelectronic device and methods therefor |
US5766987A (en) | 1995-09-22 | 1998-06-16 | Tessera, Inc. | Microelectronic encapsulation methods and equipment |
US6211572B1 (en) | 1995-10-31 | 2001-04-03 | Tessera, Inc. | Semiconductor chip package with fan-in leads |
JPH09134934A (ja) | 1995-11-07 | 1997-05-20 | Sumitomo Metal Ind Ltd | 半導体パッケージ及び半導体装置 |
JP3332308B2 (ja) * | 1995-11-07 | 2002-10-07 | 新光電気工業株式会社 | 半導体装置及びその製造方法 |
US5718361A (en) | 1995-11-21 | 1998-02-17 | International Business Machines Corporation | Apparatus and method for forming mold for metallic material |
US5731709A (en) | 1996-01-26 | 1998-03-24 | Motorola, Inc. | Method for testing a ball grid array semiconductor device and a device for such testing |
US5994152A (en) | 1996-02-21 | 1999-11-30 | Formfactor, Inc. | Fabricating interconnects and tips using sacrificial substrates |
JP3146345B2 (ja) | 1996-03-11 | 2001-03-12 | アムコー テクノロジー コリア インコーポレーティド | バンプチップスケール半導体パッケージのバンプ形成方法 |
US6000126A (en) | 1996-03-29 | 1999-12-14 | General Dynamics Information Systems, Inc. | Method and apparatus for connecting area grid arrays to printed wire board |
US6821821B2 (en) | 1996-04-18 | 2004-11-23 | Tessera, Inc. | Methods for manufacturing resistors using a sacrificial layer |
DE19618227A1 (de) | 1996-05-07 | 1997-11-13 | Herbert Streckfus Gmbh | Verfahren und Vorrichtung zum Verlöten von elektronischen Bauelementen auf einer Leiterplatte |
KR100186333B1 (ko) | 1996-06-20 | 1999-03-20 | 문정환 | 칩 사이즈 반도체 패키지 및 그 제조방법 |
JPH10135220A (ja) | 1996-10-29 | 1998-05-22 | Taiyo Yuden Co Ltd | バンプ形成方法 |
JPH10135221A (ja) | 1996-10-29 | 1998-05-22 | Taiyo Yuden Co Ltd | バンプ形成方法 |
US6492719B2 (en) | 1999-07-30 | 2002-12-10 | Hitachi, Ltd. | Semiconductor device |
US5976913A (en) | 1996-12-12 | 1999-11-02 | Tessera, Inc. | Microelectronic mounting with multiple lead deformation using restraining straps |
US6133072A (en) | 1996-12-13 | 2000-10-17 | Tessera, Inc. | Microelectronic connector with planar elastomer sockets |
US6121676A (en) | 1996-12-13 | 2000-09-19 | Tessera, Inc. | Stacked microelectronic assembly and method therefor |
US6054337A (en) | 1996-12-13 | 2000-04-25 | Tessera, Inc. | Method of making a compliant multichip package |
US6225688B1 (en) | 1997-12-11 | 2001-05-01 | Tessera, Inc. | Stacked microelectronic assembly and method therefor |
JP3400279B2 (ja) | 1997-01-13 | 2003-04-28 | 株式会社新川 | バンプ形成方法 |
US5898991A (en) | 1997-01-16 | 1999-05-04 | International Business Machines Corporation | Methods of fabrication of coaxial vias and magnetic devices |
US5839191A (en) | 1997-01-24 | 1998-11-24 | Unisys Corporation | Vibrating template method of placing solder balls on the I/O pads of an integrated circuit package |
WO1999009595A1 (en) | 1997-08-19 | 1999-02-25 | Hitachi, Ltd. | Multichip module structure and method for manufacturing the same |
CA2213590C (en) | 1997-08-21 | 2006-11-07 | Keith C. Carroll | Flexible circuit connector and method of making same |
JP3859318B2 (ja) * | 1997-08-29 | 2006-12-20 | シチズン電子株式会社 | 電子回路のパッケージ方法 |
US6525414B2 (en) | 1997-09-16 | 2003-02-25 | Matsushita Electric Industrial Co., Ltd. | Semiconductor device including a wiring board and semiconductor elements mounted thereon |
JP3937265B2 (ja) | 1997-09-29 | 2007-06-27 | エルピーダメモリ株式会社 | 半導体装置 |
JP2978861B2 (ja) | 1997-10-28 | 1999-11-15 | 九州日本電気株式会社 | モールドbga型半導体装置及びその製造方法 |
US6038136A (en) | 1997-10-29 | 2000-03-14 | Hestia Technologies, Inc. | Chip package with molded underfill |
JP3393800B2 (ja) | 1997-11-05 | 2003-04-07 | 新光電気工業株式会社 | 半導体装置の製造方法 |
JPH11219984A (ja) | 1997-11-06 | 1999-08-10 | Sharp Corp | 半導体装置パッケージおよびその製造方法ならびにそのための回路基板 |
US6222136B1 (en) | 1997-11-12 | 2001-04-24 | International Business Machines Corporation | Printed circuit board with continuous connective bumps |
US6038133A (en) * | 1997-11-25 | 2000-03-14 | Matsushita Electric Industrial Co., Ltd. | Circuit component built-in module and method for producing the same |
US6002168A (en) | 1997-11-25 | 1999-12-14 | Tessera, Inc. | Microelectronic component with rigid interposer |
JPH11163022A (ja) | 1997-11-28 | 1999-06-18 | Sony Corp | 半導体装置、その製造方法及び電子機器 |
US6124546A (en) | 1997-12-03 | 2000-09-26 | Advanced Micro Devices, Inc. | Integrated circuit chip package and method of making the same |
US6260264B1 (en) | 1997-12-08 | 2001-07-17 | 3M Innovative Properties Company | Methods for making z-axis electrical connections |
US6052287A (en) | 1997-12-09 | 2000-04-18 | Sandia Corporation | Silicon ball grid array chip carrier |
US5973391A (en) | 1997-12-11 | 1999-10-26 | Read-Rite Corporation | Interposer with embedded circuitry and method for using the same to package microelectronic units |
JPH11220082A (ja) | 1998-02-03 | 1999-08-10 | Oki Electric Ind Co Ltd | 半導体装置 |
JP3536650B2 (ja) | 1998-02-27 | 2004-06-14 | 富士ゼロックス株式会社 | バンプ形成方法および装置 |
JPH11260856A (ja) | 1998-03-11 | 1999-09-24 | Matsushita Electron Corp | 半導体装置及びその製造方法並びに半導体装置の実装構造 |
KR100260997B1 (ko) | 1998-04-08 | 2000-07-01 | 마이클 디. 오브라이언 | 반도체패키지 |
US6329224B1 (en) | 1998-04-28 | 2001-12-11 | Tessera, Inc. | Encapsulation of microelectronic assemblies |
US6180881B1 (en) * | 1998-05-05 | 2001-01-30 | Harlan Ruben Isaak | Chip stack and method of making same |
JPH11330134A (ja) | 1998-05-12 | 1999-11-30 | Hitachi Ltd | ワイヤボンディング方法およびその装置並びに半導体装置 |
KR100266693B1 (ko) | 1998-05-30 | 2000-09-15 | 김영환 | 적층가능한 비지에이 반도체 칩 패키지 및 그 제조방법 |
KR100265563B1 (ko) | 1998-06-29 | 2000-09-15 | 김영환 | 볼 그리드 어레이 패키지 및 그의 제조 방법 |
US6414391B1 (en) | 1998-06-30 | 2002-07-02 | Micron Technology, Inc. | Module assembly for stacked BGA packages with a common bus bar in the assembly |
US6164523A (en) | 1998-07-01 | 2000-12-26 | Semiconductor Components Industries, Llc | Electronic component and method of manufacture |
US6399426B1 (en) | 1998-07-21 | 2002-06-04 | Miguel Albert Capote | Semiconductor flip-chip package and method for the fabrication thereof |
US5854507A (en) | 1998-07-21 | 1998-12-29 | Hewlett-Packard Company | Multiple chip assembly |
US6515355B1 (en) | 1998-09-02 | 2003-02-04 | Micron Technology, Inc. | Passivation layer for packaged integrated circuits |
JP2000091383A (ja) | 1998-09-07 | 2000-03-31 | Ngk Spark Plug Co Ltd | 配線基板 |
US6194250B1 (en) | 1998-09-14 | 2001-02-27 | Motorola, Inc. | Low-profile microelectronic package |
US6158647A (en) | 1998-09-29 | 2000-12-12 | Micron Technology, Inc. | Concave face wire bond capillary |
US6684007B2 (en) | 1998-10-09 | 2004-01-27 | Fujitsu Limited | Optical coupling structures and the fabrication processes |
JP2000311915A (ja) | 1998-10-14 | 2000-11-07 | Texas Instr Inc <Ti> | 半導体デバイス及びボンディング方法 |
JP3407275B2 (ja) | 1998-10-28 | 2003-05-19 | インターナショナル・ビジネス・マシーンズ・コーポレーション | バンプ及びその形成方法 |
US6332270B2 (en) | 1998-11-23 | 2001-12-25 | International Business Machines Corporation | Method of making high density integral test probe |
KR100502222B1 (ko) | 1999-01-29 | 2005-07-18 | 마츠시타 덴끼 산교 가부시키가이샤 | 전자부품의 실장방법 및 그 장치 |
US6206273B1 (en) | 1999-02-17 | 2001-03-27 | International Business Machines Corporation | Structures and processes to create a desired probetip contact geometry on a wafer test probe |
KR100319609B1 (ko) | 1999-03-09 | 2002-01-05 | 김영환 | 와이어 어래이드 칩 사이즈 패키지 및 그 제조방법 |
US6177729B1 (en) | 1999-04-03 | 2001-01-23 | International Business Machines Corporation | Rolling ball connector |
US6211574B1 (en) | 1999-04-16 | 2001-04-03 | Advanced Semiconductor Engineering Inc. | Semiconductor package with wire protection and method therefor |
US6376769B1 (en) | 1999-05-18 | 2002-04-23 | Amerasia International Technology, Inc. | High-density electronic package, and method for making same |
US6258625B1 (en) | 1999-05-18 | 2001-07-10 | International Business Machines Corporation | Method of interconnecting electronic components using a plurality of conductive studs |
JP3398721B2 (ja) | 1999-05-20 | 2003-04-21 | アムコー テクノロジー コリア インコーポレーティド | 半導体パッケージ及びその製造方法 |
US6228687B1 (en) | 1999-06-28 | 2001-05-08 | Micron Technology, Inc. | Wafer-level package and methods of fabricating |
TW417839U (en) | 1999-07-30 | 2001-01-01 | Shen Ming Tung | Stacked memory module structure and multi-layered stacked memory module structure using the same |
JP4526651B2 (ja) | 1999-08-12 | 2010-08-18 | 富士通セミコンダクター株式会社 | 半導体装置 |
US6168965B1 (en) | 1999-08-12 | 2001-01-02 | Tower Semiconductor Ltd. | Method for making backside illuminated image sensor |
JP5333337B2 (ja) | 1999-08-12 | 2013-11-06 | 富士通セミコンダクター株式会社 | 半導体装置の製造方法 |
CN101232779B (zh) * | 1999-09-02 | 2013-03-27 | 揖斐电株式会社 | 印刷布线板 |
US6867499B1 (en) | 1999-09-30 | 2005-03-15 | Skyworks Solutions, Inc. | Semiconductor packaging |
JP3513444B2 (ja) | 1999-10-20 | 2004-03-31 | 株式会社新川 | ピン状ワイヤ等の形成方法 |
JP2001127246A (ja) | 1999-10-29 | 2001-05-11 | Fujitsu Ltd | 半導体装置 |
US6362525B1 (en) | 1999-11-09 | 2002-03-26 | Cypress Semiconductor Corp. | Circuit structure including a passive element formed within a grid array substrate and method for making the same |
JP3619410B2 (ja) | 1999-11-18 | 2005-02-09 | 株式会社ルネサステクノロジ | バンプ形成方法およびそのシステム |
JP3798597B2 (ja) | 1999-11-30 | 2006-07-19 | 富士通株式会社 | 半導体装置 |
JP3566156B2 (ja) | 1999-12-02 | 2004-09-15 | 株式会社新川 | ピン状ワイヤ等の形成方法 |
KR100426494B1 (ko) | 1999-12-20 | 2004-04-13 | 앰코 테크놀로지 코리아 주식회사 | 반도체 패키지 및 이것의 제조방법 |
US6790757B1 (en) | 1999-12-20 | 2004-09-14 | Agere Systems Inc. | Wire bonding method for copper interconnects in semiconductor devices |
KR20010061849A (ko) | 1999-12-29 | 2001-07-07 | 박종섭 | 웨이퍼 레벨 패키지 |
JP2001196407A (ja) | 2000-01-14 | 2001-07-19 | Seiko Instruments Inc | 半導体装置および半導体装置の形成方法 |
US6710454B1 (en) | 2000-02-16 | 2004-03-23 | Micron Technology, Inc. | Adhesive layer for an electronic apparatus having multiple semiconductor devices |
JP2001339011A (ja) | 2000-03-24 | 2001-12-07 | Shinko Electric Ind Co Ltd | 半導体装置およびその製造方法 |
JP3980807B2 (ja) | 2000-03-27 | 2007-09-26 | 株式会社東芝 | 半導体装置及び半導体モジュール |
JP2001274196A (ja) | 2000-03-28 | 2001-10-05 | Rohm Co Ltd | 半導体装置 |
KR100583491B1 (ko) | 2000-04-07 | 2006-05-24 | 앰코 테크놀로지 코리아 주식회사 | 반도체패키지 및 그 제조방법 |
US6578754B1 (en) | 2000-04-27 | 2003-06-17 | Advanpack Solutions Pte. Ltd. | Pillar connections for semiconductor chips and method of manufacture |
US6531335B1 (en) | 2000-04-28 | 2003-03-11 | Micron Technology, Inc. | Interposers including upwardly protruding dams, semiconductor device assemblies including the interposers, and methods |
JP2001326236A (ja) * | 2000-05-12 | 2001-11-22 | Nec Kyushu Ltd | 半導体装置の製造方法 |
JP2001326304A (ja) | 2000-05-15 | 2001-11-22 | Toshiba Corp | 半導体装置及びその製造方法 |
US6522018B1 (en) | 2000-05-16 | 2003-02-18 | Micron Technology, Inc. | Ball grid array chip packages having improved testing and stacking characteristics |
US6647310B1 (en) | 2000-05-30 | 2003-11-11 | Advanced Micro Devices, Inc. | Temperature control of an integrated circuit |
US6531784B1 (en) | 2000-06-02 | 2003-03-11 | Amkor Technology, Inc. | Semiconductor package with spacer strips |
US6560117B2 (en) | 2000-06-28 | 2003-05-06 | Micron Technology, Inc. | Packaged microelectronic die assemblies and methods of manufacture |
US6476583B2 (en) | 2000-07-21 | 2002-11-05 | Jomahip, Llc | Automatic battery charging system for a battery back-up DC power supply |
SE517086C2 (sv) | 2000-08-08 | 2002-04-09 | Ericsson Telefon Ab L M | Förfarande för säkring av lodkulor och eventuella komponenter, vilka är fästa på en och samma sida av ett substrat |
US20020020898A1 (en) | 2000-08-16 | 2002-02-21 | Vu Quat T. | Microelectronic substrates with integrated devices |
US6462575B1 (en) | 2000-08-28 | 2002-10-08 | Micron Technology, Inc. | Method and system for wafer level testing and burning-in semiconductor components |
JP3874062B2 (ja) | 2000-09-05 | 2007-01-31 | セイコーエプソン株式会社 | 半導体装置 |
US6507104B2 (en) | 2000-09-07 | 2003-01-14 | Siliconware Precision Industries Co., Ltd. | Semiconductor package with embedded heat-dissipating device |
US7009297B1 (en) | 2000-10-13 | 2006-03-07 | Bridge Semiconductor Corporation | Semiconductor chip assembly with embedded metal particle |
US6423570B1 (en) | 2000-10-18 | 2002-07-23 | Intel Corporation | Method to protect an encapsulated die package during back grinding with a solder metallization layer and devices formed thereby |
JP4505983B2 (ja) | 2000-12-01 | 2010-07-21 | 日本電気株式会社 | 半導体装置 |
JP3798620B2 (ja) * | 2000-12-04 | 2006-07-19 | 富士通株式会社 | 半導体装置の製造方法 |
TW511405B (en) | 2000-12-27 | 2002-11-21 | Matsushita Electric Ind Co Ltd | Device built-in module and manufacturing method thereof |
KR100393102B1 (ko) | 2000-12-29 | 2003-07-31 | 앰코 테크놀로지 코리아 주식회사 | 스택형 반도체패키지 |
AUPR244801A0 (en) * | 2001-01-10 | 2001-02-01 | Silverbrook Research Pty Ltd | A method and apparatus (WSM01) |
US6388322B1 (en) | 2001-01-17 | 2002-05-14 | Aralight, Inc. | Article comprising a mechanically compliant bump |
US6653170B1 (en) | 2001-02-06 | 2003-11-25 | Charles W. C. Lin | Semiconductor chip assembly with elongated wire ball bonded to chip and electrolessly plated to support circuit |
JP2002280414A (ja) | 2001-03-22 | 2002-09-27 | Mitsubishi Electric Corp | 半導体装置およびその製造方法 |
JP2002289769A (ja) | 2001-03-26 | 2002-10-04 | Matsushita Electric Ind Co Ltd | 積層型半導体装置およびその製造方法 |
SG108245A1 (en) | 2001-03-30 | 2005-01-28 | Micron Technology Inc | Ball grid array interposer, packages and methods |
US7115986B2 (en) | 2001-05-02 | 2006-10-03 | Micron Technology, Inc. | Flexible ball grid array chip scale packages |
TW544826B (en) | 2001-05-18 | 2003-08-01 | Nec Electronics Corp | Flip-chip-type semiconductor device and manufacturing method thereof |
US6930256B1 (en) | 2002-05-01 | 2005-08-16 | Amkor Technology, Inc. | Integrated circuit substrate having laser-embedded conductive patterns and method therefor |
US6754407B2 (en) | 2001-06-26 | 2004-06-22 | Intel Corporation | Flip-chip package integrating optical and electrical devices and coupling to a waveguide on a board |
US20030006494A1 (en) | 2001-07-03 | 2003-01-09 | Lee Sang Ho | Thin profile stackable semiconductor package and method for manufacturing |
US6451626B1 (en) | 2001-07-27 | 2002-09-17 | Charles W.C. Lin | Three-dimensional stacked semiconductor package |
US6765287B1 (en) | 2001-07-27 | 2004-07-20 | Charles W. C. Lin | Three-dimensional stacked semiconductor package |
JP4023159B2 (ja) * | 2001-07-31 | 2007-12-19 | ソニー株式会社 | 半導体装置の製造方法及び積層半導体装置の製造方法 |
US6550666B2 (en) | 2001-08-21 | 2003-04-22 | Advanpack Solutions Pte Ltd | Method for forming a flip chip on leadframe semiconductor package |
WO2003019654A1 (en) | 2001-08-22 | 2003-03-06 | Tessera, Inc. | Stacked chip assembly with stiffening layer |
US7176506B2 (en) | 2001-08-28 | 2007-02-13 | Tessera, Inc. | High frequency chip packages with connecting elements |
US20030057544A1 (en) * | 2001-09-13 | 2003-03-27 | Nathan Richard J. | Integrated assembly protocol |
US6977440B2 (en) | 2001-10-09 | 2005-12-20 | Tessera, Inc. | Stacked packages |
WO2003032370A2 (en) | 2001-10-09 | 2003-04-17 | Tessera, Inc. | Stacked packages |
JP2003122611A (ja) | 2001-10-11 | 2003-04-25 | Oki Electric Ind Co Ltd | データ提供方法及びサーバ装置 |
JP4257771B2 (ja) | 2001-10-16 | 2009-04-22 | シンジーテック株式会社 | 導電性ブレード |
US20030094666A1 (en) | 2001-11-16 | 2003-05-22 | R-Tec Corporation | Interposer |
JP3875077B2 (ja) | 2001-11-16 | 2007-01-31 | 富士通株式会社 | 電子デバイス及びデバイス接続方法 |
JP2003174124A (ja) | 2001-12-04 | 2003-06-20 | Sainekkusu:Kk | 半導体装置の外部電極形成方法 |
JP3507059B2 (ja) | 2002-06-27 | 2004-03-15 | 沖電気工業株式会社 | 積層マルチチップパッケージ |
KR100442293B1 (ko) * | 2001-12-27 | 2004-07-30 | 엘지.필립스 엘시디 주식회사 | 패턴 형성방법 |
JP2003197669A (ja) | 2001-12-28 | 2003-07-11 | Seiko Epson Corp | ボンディング方法及びボンディング装置 |
TW584950B (en) | 2001-12-31 | 2004-04-21 | Megic Corp | Chip packaging structure and process thereof |
JP3935370B2 (ja) | 2002-02-19 | 2007-06-20 | セイコーエプソン株式会社 | バンプ付き半導体素子の製造方法、半導体装置及びその製造方法、回路基板並びに電子機器 |
SG115456A1 (en) | 2002-03-04 | 2005-10-28 | Micron Technology Inc | Semiconductor die packages with recessed interconnecting structures and methods for assembling the same |
US6653723B2 (en) | 2002-03-09 | 2003-11-25 | Fujitsu Limited | System for providing an open-cavity low profile encapsulated semiconductor package |
KR100452819B1 (ko) * | 2002-03-18 | 2004-10-15 | 삼성전기주식회사 | 칩 패키지 및 그 제조방법 |
US6979230B2 (en) | 2002-03-20 | 2005-12-27 | Gabe Cherian | Light socket |
US7323767B2 (en) | 2002-04-25 | 2008-01-29 | Micron Technology, Inc. | Standoffs for centralizing internals in packaging process |
US7633765B1 (en) | 2004-03-23 | 2009-12-15 | Amkor Technology, Inc. | Semiconductor package including a top-surface metal layer for implementing circuit features |
US7078822B2 (en) | 2002-06-25 | 2006-07-18 | Intel Corporation | Microelectronic device interconnects |
JP2004047702A (ja) | 2002-07-11 | 2004-02-12 | Toshiba Corp | 半導体装置積層モジュール |
US6756252B2 (en) | 2002-07-17 | 2004-06-29 | Texas Instrument Incorporated | Multilayer laser trim interconnect method |
US6987032B1 (en) | 2002-07-19 | 2006-01-17 | Asat Ltd. | Ball grid array package and process for manufacturing same |
TW549592U (en) * | 2002-08-16 | 2003-08-21 | Via Tech Inc | Integrated circuit package with a balanced-part structure |
AU2003265417A1 (en) | 2002-08-16 | 2004-03-03 | Tessera, Inc. | Microelectronic packages with self-aligning features |
US6740546B2 (en) | 2002-08-21 | 2004-05-25 | Micron Technology, Inc. | Packaged microelectronic devices and methods for assembling microelectronic devices |
US6964881B2 (en) * | 2002-08-27 | 2005-11-15 | Micron Technology, Inc. | Multi-chip wafer level system packages and methods of forming same |
JP3765778B2 (ja) | 2002-08-29 | 2006-04-12 | ローム株式会社 | ワイヤボンディング用キャピラリ及びこれを用いたワイヤボンディング方法 |
JP2004095799A (ja) | 2002-08-30 | 2004-03-25 | Toshiba Corp | 半導体装置およびその製造方法 |
US7294928B2 (en) | 2002-09-06 | 2007-11-13 | Tessera, Inc. | Components, methods and assemblies for stacked packages |
US7246431B2 (en) | 2002-09-06 | 2007-07-24 | Tessera, Inc. | Methods of making microelectronic packages including folded substrates |
US7071547B2 (en) | 2002-09-11 | 2006-07-04 | Tessera, Inc. | Assemblies having stacked semiconductor chips and methods of making same |
US7229906B2 (en) | 2002-09-19 | 2007-06-12 | Kulicke And Soffa Industries, Inc. | Method and apparatus for forming bumps for semiconductor interconnections using a wire bonding machine |
KR20050071524A (ko) | 2002-09-30 | 2005-07-07 | 어드밴스드 인터커넥트 테크놀로지스 리미티드 | 블럭 몰드 조립체용 열 강화 패키지 |
US7045884B2 (en) * | 2002-10-04 | 2006-05-16 | International Rectifier Corporation | Semiconductor device package |
EP1556895A4 (en) | 2002-10-08 | 2009-12-30 | Chippac Inc | SEMICONDUCTOR STACKED MULTIPLE CAPSULATION MODULE WITH INVERTED SECOND CAPACITY |
TW567601B (en) | 2002-10-18 | 2003-12-21 | Siliconware Precision Industries Co Ltd | Module device of stacked semiconductor package and method for fabricating the same |
TWI221664B (en) * | 2002-11-07 | 2004-10-01 | Via Tech Inc | Structure of chip package and process thereof |
JP2004172157A (ja) | 2002-11-15 | 2004-06-17 | Shinko Electric Ind Co Ltd | 半導体パッケージおよびパッケージスタック半導体装置 |
JP2004172477A (ja) | 2002-11-21 | 2004-06-17 | Kaijo Corp | ワイヤループ形状、そのワイヤループ形状を備えた半導体装置、ワイヤボンディング方法及び半導体製造装置 |
JP4464041B2 (ja) | 2002-12-13 | 2010-05-19 | キヤノン株式会社 | 柱状構造体、柱状構造体を有する電極、及びこれらの作製方法 |
KR100621991B1 (ko) | 2003-01-03 | 2006-09-13 | 삼성전자주식회사 | 칩 스케일 적층 패키지 |
JP2004221257A (ja) | 2003-01-14 | 2004-08-05 | Seiko Epson Corp | ワイヤボンディング方法及びワイヤボンディング装置 |
WO2004077525A2 (en) | 2003-02-25 | 2004-09-10 | Tessera, Inc. | Ball grid array with bumps |
TW583757B (en) | 2003-02-26 | 2004-04-11 | Advanced Semiconductor Eng | A structure of a flip-chip package and a process thereof |
US20040217471A1 (en) | 2003-02-27 | 2004-11-04 | Tessera, Inc. | Component and assemblies with ends offset downwardly |
JP3885747B2 (ja) | 2003-03-13 | 2007-02-28 | 株式会社デンソー | ワイヤボンディング方法 |
JP2004343030A (ja) | 2003-03-31 | 2004-12-02 | North:Kk | 配線回路基板とその製造方法とその配線回路基板を備えた回路モジュール |
JP2004319892A (ja) | 2003-04-18 | 2004-11-11 | Renesas Technology Corp | 半導体装置の製造方法 |
JP4199588B2 (ja) | 2003-04-25 | 2008-12-17 | テセラ・インターコネクト・マテリアルズ,インコーポレイテッド | 配線回路基板の製造方法、及び、この配線回路基板を用いた半導体集積回路装置の製造方法 |
DE10320646A1 (de) | 2003-05-07 | 2004-09-16 | Infineon Technologies Ag | Elektronisches Bauteil, sowie Systemträger und Nutzen zur Herstellung desselben |
JP4145730B2 (ja) | 2003-06-17 | 2008-09-03 | 松下電器産業株式会社 | 半導体内蔵モジュール |
US20040262728A1 (en) | 2003-06-30 | 2004-12-30 | Sterrett Terry L. | Modular device assemblies |
KR100604821B1 (ko) | 2003-06-30 | 2006-07-26 | 삼성전자주식회사 | 적층형 볼 그리드 어레이 패키지 및 그 제조방법 |
JP2005033141A (ja) | 2003-07-11 | 2005-02-03 | Sony Corp | 半導体装置及びその製造方法、疑似ウェーハ及びその製造方法、並びに半導体装置の実装構造 |
US7227095B2 (en) | 2003-08-06 | 2007-06-05 | Micron Technology, Inc. | Wire bonders and methods of wire-bonding |
KR100546374B1 (ko) | 2003-08-28 | 2006-01-26 | 삼성전자주식회사 | 센터 패드를 갖는 적층형 반도체 패키지 및 그 제조방법 |
US7372151B1 (en) | 2003-09-12 | 2008-05-13 | Asat Ltd. | Ball grid array package and process for manufacturing same |
US7061096B2 (en) | 2003-09-24 | 2006-06-13 | Silicon Pipe, Inc. | Multi-surface IC packaging structures and methods for their manufacture |
US20050082654A1 (en) | 2003-09-26 | 2005-04-21 | Tessera, Inc. | Structure and self-locating method of making capped chips |
US7462936B2 (en) | 2003-10-06 | 2008-12-09 | Tessera, Inc. | Formation of circuitry with modification of feature height |
JP4272968B2 (ja) * | 2003-10-16 | 2009-06-03 | エルピーダメモリ株式会社 | 半導体装置および半導体チップ制御方法 |
JP4167965B2 (ja) | 2003-11-07 | 2008-10-22 | テセラ・インターコネクト・マテリアルズ,インコーポレイテッド | 配線回路用部材の製造方法 |
KR100564585B1 (ko) | 2003-11-13 | 2006-03-28 | 삼성전자주식회사 | 이중 스택된 bga 패키지 및 다중 스택된 bga 패키지 |
TWI227555B (en) | 2003-11-17 | 2005-02-01 | Advanced Semiconductor Eng | Structure of chip package and the process thereof |
KR100621992B1 (ko) * | 2003-11-19 | 2006-09-13 | 삼성전자주식회사 | 이종 소자들의 웨이퍼 레벨 적층 구조와 방법 및 이를이용한 시스템-인-패키지 |
JP2005183923A (ja) * | 2003-11-28 | 2005-07-07 | Matsushita Electric Ind Co Ltd | 半導体装置およびその製造方法 |
US7345361B2 (en) | 2003-12-04 | 2008-03-18 | Intel Corporation | Stackable integrated circuit packaging |
JP2005175019A (ja) * | 2003-12-08 | 2005-06-30 | Sharp Corp | 半導体装置及び積層型半導体装置 |
WO2005059967A2 (en) | 2003-12-17 | 2005-06-30 | Chippac, Inc. | Multiple chip package module having inverted package stacked over die |
DE10360708B4 (de) | 2003-12-19 | 2008-04-10 | Infineon Technologies Ag | Halbleitermodul mit einem Halbleiterstapel, Umverdrahtungsplatte, und Verfahren zur Herstellung derselben |
JP4334996B2 (ja) | 2003-12-24 | 2009-09-30 | 株式会社フジクラ | 多層配線板用基材、両面配線板およびそれらの製造方法 |
US7495644B2 (en) | 2003-12-26 | 2009-02-24 | Semiconductor Energy Laboratory Co., Ltd. | Display device and method for manufacturing display device |
US6917098B1 (en) | 2003-12-29 | 2005-07-12 | Texas Instruments Incorporated | Three-level leadframe for no-lead packages |
US6900530B1 (en) | 2003-12-29 | 2005-05-31 | Ramtek Technology, Inc. | Stacked IC |
US7176043B2 (en) | 2003-12-30 | 2007-02-13 | Tessera, Inc. | Microelectronic packages and methods therefor |
US7709968B2 (en) | 2003-12-30 | 2010-05-04 | Tessera, Inc. | Micro pin grid array with pin motion isolation |
US8207604B2 (en) | 2003-12-30 | 2012-06-26 | Tessera, Inc. | Microelectronic package comprising offset conductive posts on compliant layer |
JP2005203497A (ja) | 2004-01-14 | 2005-07-28 | Toshiba Corp | 半導体装置およびその製造方法 |
US20050173807A1 (en) * | 2004-02-05 | 2005-08-11 | Jianbai Zhu | High density vertically stacked semiconductor device |
US8399972B2 (en) | 2004-03-04 | 2013-03-19 | Skyworks Solutions, Inc. | Overmolded semiconductor package with a wirebond cage for EMI shielding |
US7095105B2 (en) * | 2004-03-23 | 2006-08-22 | Texas Instruments Incorporated | Vertically stacked semiconductor device |
JP4484035B2 (ja) | 2004-04-06 | 2010-06-16 | セイコーエプソン株式会社 | 半導体装置の製造方法 |
US8092734B2 (en) * | 2004-05-13 | 2012-01-10 | Aptina Imaging Corporation | Covers for microelectronic imagers and methods for wafer-level packaging of microelectronics imagers |
US7629695B2 (en) | 2004-05-20 | 2009-12-08 | Kabushiki Kaisha Toshiba | Stacked electronic component and manufacturing method thereof |
US6962864B1 (en) | 2004-05-26 | 2005-11-08 | National Chung Cheng University | Wire-bonding method for chips with copper interconnects by introducing a thin layer |
US7233057B2 (en) | 2004-05-28 | 2007-06-19 | Nokia Corporation | Integrated circuit package with optimized mold shape |
TWI255022B (en) | 2004-05-31 | 2006-05-11 | Via Tech Inc | Circuit carrier and manufacturing process thereof |
US7453157B2 (en) | 2004-06-25 | 2008-11-18 | Tessera, Inc. | Microelectronic packages and methods therefor |
JP4385329B2 (ja) | 2004-10-08 | 2009-12-16 | Okiセミコンダクタ株式会社 | 半導体装置の製造方法 |
US8646675B2 (en) | 2004-11-02 | 2014-02-11 | Hid Global Gmbh | Laying apparatus, contact-making apparatus, movement system, laying and contact-making unit, production system, method for production and a transponder unit |
US8525314B2 (en) | 2004-11-03 | 2013-09-03 | Tessera, Inc. | Stacked packaging improvements |
US7750483B1 (en) | 2004-11-10 | 2010-07-06 | Bridge Semiconductor Corporation | Semiconductor chip assembly with welded metal pillar and enlarged plated contact terminal |
US7268421B1 (en) | 2004-11-10 | 2007-09-11 | Bridge Semiconductor Corporation | Semiconductor chip assembly with welded metal pillar that includes enlarged ball bond |
KR100674926B1 (ko) | 2004-12-08 | 2007-01-26 | 삼성전자주식회사 | 메모리 카드 및 그 제조 방법 |
JP4504798B2 (ja) | 2004-12-16 | 2010-07-14 | パナソニック株式会社 | 多段構成半導体モジュール |
JP2006186086A (ja) | 2004-12-27 | 2006-07-13 | Itoo:Kk | プリント基板のはんだ付け方法およびブリッジ防止用ガイド板 |
DE102005006333B4 (de) | 2005-02-10 | 2007-10-18 | Infineon Technologies Ag | Halbleiterbauteil mit mehreren Bondanschlüssen und gebondeten Kontaktelementen unterschiedlicher Metallzusammensetzung und Verfahren zur Herstellung desselben |
DE102005006995B4 (de) | 2005-02-15 | 2008-01-24 | Infineon Technologies Ag | Halbleiterbauteil mit Kunstoffgehäuse und Außenanschlüssen sowie Verfahren zur Herstellung desselben |
KR100630741B1 (ko) | 2005-03-04 | 2006-10-02 | 삼성전자주식회사 | 다중 몰딩에 의한 적층형 반도체 패키지 및 그 제조방법 |
US7939934B2 (en) | 2005-03-16 | 2011-05-10 | Tessera, Inc. | Microelectronic packages and methods therefor |
US7371676B2 (en) | 2005-04-08 | 2008-05-13 | Micron Technology, Inc. | Method for fabricating semiconductor components with through wire interconnects |
TWI284394B (en) | 2005-05-12 | 2007-07-21 | Advanced Semiconductor Eng | Lid used in package structure and the package structure of having the same |
JP2006324553A (ja) | 2005-05-20 | 2006-11-30 | Renesas Technology Corp | 半導体装置及びその製造方法 |
US7216794B2 (en) | 2005-06-09 | 2007-05-15 | Texas Instruments Incorporated | Bond capillary design for ribbon wire bonding |
JP4322844B2 (ja) | 2005-06-10 | 2009-09-02 | シャープ株式会社 | 半導体装置および積層型半導体装置 |
US20100078795A1 (en) | 2005-07-01 | 2010-04-01 | Koninklijke Philips Electronics, N.V. | Electronic device |
US7476608B2 (en) | 2005-07-14 | 2009-01-13 | Hewlett-Packard Development Company, L.P. | Electrically connecting substrate with electrical device |
TWI263313B (en) | 2005-08-15 | 2006-10-01 | Phoenix Prec Technology Corp | Stack structure of semiconductor component embedded in supporting board |
SG130055A1 (en) | 2005-08-19 | 2007-03-20 | Micron Technology Inc | Microelectronic devices, stacked microelectronic devices, and methods for manufacturing microelectronic devices |
SG130066A1 (en) | 2005-08-26 | 2007-03-20 | Micron Technology Inc | Microelectronic device packages, stacked microelectronic device packages, and methods for manufacturing microelectronic devices |
JP5522561B2 (ja) | 2005-08-31 | 2014-06-18 | マイクロン テクノロジー, インク. | マイクロ電子デバイスパッケージ、積重ね型マイクロ電子デバイスパッケージ、およびマイクロ電子デバイスを製造する方法 |
US7675152B2 (en) | 2005-09-01 | 2010-03-09 | Texas Instruments Incorporated | Package-on-package semiconductor assembly |
US7504716B2 (en) | 2005-10-26 | 2009-03-17 | Texas Instruments Incorporated | Structure and method of molded QFN device suitable for miniaturization, multiple rows and stacking |
JP2007123595A (ja) | 2005-10-28 | 2007-05-17 | Nec Corp | 半導体装置及びその実装構造 |
CN101356633B (zh) | 2005-11-01 | 2011-03-23 | Nxp股份有限公司 | 半导体裸片的封装方法以及通过该方法形成的裸片封装 |
JP4530975B2 (ja) | 2005-11-14 | 2010-08-25 | 株式会社新川 | ワイヤボンディング方法 |
JP2007142042A (ja) | 2005-11-16 | 2007-06-07 | Sharp Corp | 半導体パッケージとその製造方法,半導体モジュール,および電子機器 |
US7344917B2 (en) | 2005-11-30 | 2008-03-18 | Freescale Semiconductor, Inc. | Method for packaging a semiconductor device |
US7307348B2 (en) | 2005-12-07 | 2007-12-11 | Micron Technology, Inc. | Semiconductor components having through wire interconnects (TWI) |
US8058101B2 (en) | 2005-12-23 | 2011-11-15 | Tessera, Inc. | Microelectronic packages and methods therefor |
JP4530984B2 (ja) | 2005-12-28 | 2010-08-25 | 株式会社新川 | ワイヤボンディング装置、ボンディング制御プログラム及びボンディング方法 |
US20070190747A1 (en) | 2006-01-23 | 2007-08-16 | Tessera Technologies Hungary Kft. | Wafer level packaging to lidded chips |
JP2007208159A (ja) | 2006-02-06 | 2007-08-16 | Hitachi Ltd | 半導体装置 |
SG135074A1 (en) | 2006-02-28 | 2007-09-28 | Micron Technology Inc | Microelectronic devices, stacked microelectronic devices, and methods for manufacturing such devices |
JP2007234845A (ja) | 2006-03-01 | 2007-09-13 | Nec Corp | 半導体装置 |
US7390700B2 (en) | 2006-04-07 | 2008-06-24 | Texas Instruments Incorporated | Packaged system of semiconductor chips having a semiconductor interposer |
US7759782B2 (en) | 2006-04-07 | 2010-07-20 | Tessera, Inc. | Substrate for a microelectronic package and method of fabricating thereof |
JP5598787B2 (ja) | 2006-04-17 | 2014-10-01 | マイクロンメモリジャパン株式会社 | 積層型半導体装置の製造方法 |
US7659612B2 (en) | 2006-04-24 | 2010-02-09 | Micron Technology, Inc. | Semiconductor components having encapsulated through wire interconnects (TWI) |
US7242081B1 (en) | 2006-04-24 | 2007-07-10 | Advanced Semiconductor Engineering Inc. | Stacked package structure |
US7780064B2 (en) | 2006-06-02 | 2010-08-24 | Asm Technology Singapore Pte Ltd | Wire bonding method for forming low-loop profiles |
JP4961848B2 (ja) | 2006-06-12 | 2012-06-27 | 日本電気株式会社 | 金属ポストを有する配線基板、半導体装置及び半導体装置モジュールの製造方法 |
US20070290325A1 (en) | 2006-06-16 | 2007-12-20 | Lite-On Semiconductor Corporation | Surface mounting structure and packaging method thereof |
US7967062B2 (en) | 2006-06-16 | 2011-06-28 | International Business Machines Corporation | Thermally conductive composite interface, cooled electronic assemblies employing the same, and methods of fabrication thereof |
US8084867B2 (en) | 2006-06-29 | 2011-12-27 | Intel Corporation | Apparatus, system, and method for wireless connection in integrated circuit packages |
KR100792352B1 (ko) | 2006-07-06 | 2008-01-08 | 삼성전기주식회사 | 패키지 온 패키지의 바텀기판 및 그 제조방법 |
KR100800478B1 (ko) | 2006-07-18 | 2008-02-04 | 삼성전자주식회사 | 적층형 반도체 패키지 및 그의 제조방법 |
US20080023805A1 (en) | 2006-07-26 | 2008-01-31 | Texas Instruments Incorporated | Array-Processed Stacked Semiconductor Packages |
US8048479B2 (en) | 2006-08-01 | 2011-11-01 | Qimonda Ag | Method for placing material onto a target board by means of a transfer board |
JP2008039502A (ja) | 2006-08-03 | 2008-02-21 | Alps Electric Co Ltd | 接触子およびその製造方法 |
US7486525B2 (en) | 2006-08-04 | 2009-02-03 | International Business Machines Corporation | Temporary chip attach carrier |
US7425758B2 (en) | 2006-08-28 | 2008-09-16 | Micron Technology, Inc. | Metal core foldover package structures |
KR20080020069A (ko) | 2006-08-30 | 2008-03-05 | 삼성전자주식회사 | 반도체 패키지 및 그 제조방법 |
KR100891516B1 (ko) | 2006-08-31 | 2009-04-06 | 주식회사 하이닉스반도체 | 적층 가능한 에프비지에이 타입 반도체 패키지와 이를이용한 적층 패키지 |
KR100770934B1 (ko) | 2006-09-26 | 2007-10-26 | 삼성전자주식회사 | 반도체 패키지와 그를 이용한 반도체 시스템 패키지 |
TWI336502B (en) | 2006-09-27 | 2011-01-21 | Advanced Semiconductor Eng | Semiconductor package and semiconductor device and the method of making the same |
US7901989B2 (en) | 2006-10-10 | 2011-03-08 | Tessera, Inc. | Reconstituted wafer level stacking |
TWI312561B (en) | 2006-10-27 | 2009-07-21 | Advanced Semiconductor Eng | Structure of package on package and method for fabricating the same |
KR100817073B1 (ko) | 2006-11-03 | 2008-03-26 | 삼성전자주식회사 | 휨방지용 보강부재가 기판에 연결된 반도체 칩 스택 패키지 |
US8193034B2 (en) | 2006-11-10 | 2012-06-05 | Stats Chippac, Ltd. | Semiconductor device and method of forming vertical interconnect structure using stud bumps |
WO2008065896A1 (fr) | 2006-11-28 | 2008-06-05 | Kyushu Institute Of Technology | Procédé de fabrication d'un dispositif semi-conducteur ayant une structure d'électrode à double face et dispositif semi-conducteur fabriqué par le procédé |
US8598717B2 (en) | 2006-12-27 | 2013-12-03 | Spansion Llc | Semiconductor device and method for manufacturing the same |
JP2008166439A (ja) | 2006-12-27 | 2008-07-17 | Spansion Llc | 半導体装置およびその製造方法 |
KR100757345B1 (ko) | 2006-12-29 | 2007-09-10 | 삼성전자주식회사 | 플립 칩 패키지 및 그의 제조 방법 |
US20080156518A1 (en) | 2007-01-03 | 2008-07-03 | Tessera, Inc. | Alignment and cutting of microelectronic substrates |
TWI332702B (en) | 2007-01-09 | 2010-11-01 | Advanced Semiconductor Eng | Stackable semiconductor package and the method for making the same |
JP5347222B2 (ja) | 2007-01-10 | 2013-11-20 | 富士通株式会社 | 半導体装置の製造方法 |
US7719122B2 (en) | 2007-01-11 | 2010-05-18 | Taiwan Semiconductor Manufacturing Co., Ltd. | System-in-package packaging for minimizing bond wire contamination and yield loss |
WO2008093414A1 (ja) | 2007-01-31 | 2008-08-07 | Fujitsu Microelectronics Limited | 半導体装置及びその製造方法 |
JP4823089B2 (ja) | 2007-01-31 | 2011-11-24 | 株式会社東芝 | 積層型半導体装置の製造方法 |
US8685792B2 (en) * | 2007-03-03 | 2014-04-01 | Stats Chippac Ltd. | Integrated circuit package system with interposer |
JP5584474B2 (ja) | 2007-03-05 | 2014-09-03 | インヴェンサス・コーポレイション | 貫通ビアによって前面接点に接続された後面接点を有するチップ |
US7517733B2 (en) | 2007-03-22 | 2009-04-14 | Stats Chippac, Ltd. | Leadframe design for QFN package with top terminal leads |
JPWO2008117488A1 (ja) | 2007-03-23 | 2010-07-08 | 三洋電機株式会社 | 半導体装置およびその製造方法 |
JP4926787B2 (ja) | 2007-03-30 | 2012-05-09 | アオイ電子株式会社 | 半導体装置の製造方法 |
WO2008120755A1 (ja) | 2007-03-30 | 2008-10-09 | Nec Corporation | 機能素子内蔵回路基板及びその製造方法、並びに電子機器 |
US7589394B2 (en) | 2007-04-10 | 2009-09-15 | Ibiden Co., Ltd. | Interposer |
JP5003260B2 (ja) | 2007-04-13 | 2012-08-15 | 日本電気株式会社 | 半導体装置およびその製造方法 |
US7994622B2 (en) | 2007-04-16 | 2011-08-09 | Tessera, Inc. | Microelectronic packages having cavities for receiving microelectric elements |
KR20080094251A (ko) | 2007-04-19 | 2008-10-23 | 삼성전자주식회사 | 웨이퍼 레벨 패키지 및 그 제조방법 |
JP5601751B2 (ja) | 2007-04-26 | 2014-10-08 | スパンション エルエルシー | 半導体装置 |
US20080284045A1 (en) | 2007-05-18 | 2008-11-20 | Texas Instruments Incorporated | Method for Fabricating Array-Molded Package-On-Package |
JP2008306128A (ja) | 2007-06-11 | 2008-12-18 | Shinko Electric Ind Co Ltd | 半導体装置およびその製造方法 |
KR100865125B1 (ko) | 2007-06-12 | 2008-10-24 | 삼성전기주식회사 | 반도체 패키지 및 그 제조방법 |
TW200908819A (en) | 2007-06-15 | 2009-02-16 | Ngk Spark Plug Co | Wiring substrate with reinforcing member |
JP5179787B2 (ja) | 2007-06-22 | 2013-04-10 | ラピスセミコンダクタ株式会社 | 半導体装置及びその製造方法 |
US7944034B2 (en) | 2007-06-22 | 2011-05-17 | Texas Instruments Incorporated | Array molded package-on-package having redistribution lines |
US7911805B2 (en) | 2007-06-29 | 2011-03-22 | Tessera, Inc. | Multilayer wiring element having pin interface |
SG148901A1 (en) | 2007-07-09 | 2009-01-29 | Micron Technology Inc | Packaged semiconductor assemblies and methods for manufacturing such assemblies |
KR20090007120A (ko) | 2007-07-13 | 2009-01-16 | 삼성전자주식회사 | 봉지부를 통하여 재배선을 달성하는 웨이퍼 레벨 적층형패키지 및 그 제조방법 |
US7781877B2 (en) | 2007-08-07 | 2010-08-24 | Micron Technology, Inc. | Packaged integrated circuit devices with through-body conductive vias, and methods of making same |
JP2009044110A (ja) | 2007-08-13 | 2009-02-26 | Elpida Memory Inc | 半導体装置及びその製造方法 |
SG150396A1 (en) | 2007-08-16 | 2009-03-30 | Micron Technology Inc | Microelectronic die packages with leadframes, including leadframe-based interposer for stacked die packages, and associated systems and methods |
US8039960B2 (en) | 2007-09-21 | 2011-10-18 | Stats Chippac, Ltd. | Solder bump with inner core pillar in semiconductor package |
JP2009088254A (ja) | 2007-09-28 | 2009-04-23 | Toshiba Corp | 電子部品パッケージ及び電子部品パッケージの製造方法 |
KR101388538B1 (ko) | 2007-09-28 | 2014-04-23 | 테세라, 인코포레이티드 | 이중 포스트를 사용하여 플립칩 상호연결한 마이크로전자 어셈블리 |
US7777351B1 (en) | 2007-10-01 | 2010-08-17 | Amkor Technology, Inc. | Thin stacked interposer package |
KR20090033605A (ko) | 2007-10-01 | 2009-04-06 | 삼성전자주식회사 | 적층형 반도체 패키지, 그 형성방법 및 이를 구비하는전자장치 |
US20090091009A1 (en) | 2007-10-03 | 2009-04-09 | Corisis David J | Stackable integrated circuit package |
US8008183B2 (en) | 2007-10-04 | 2011-08-30 | Texas Instruments Incorporated | Dual capillary IC wirebonding |
US7834464B2 (en) | 2007-10-09 | 2010-11-16 | Infineon Technologies Ag | Semiconductor chip package, semiconductor chip assembly, and method for fabricating a device |
TWI360207B (en) | 2007-10-22 | 2012-03-11 | Advanced Semiconductor Eng | Chip package structure and method of manufacturing |
TWI389220B (zh) | 2007-10-22 | 2013-03-11 | 矽品精密工業股份有限公司 | 半導體封裝件及其製法 |
JP2009123863A (ja) | 2007-11-14 | 2009-06-04 | Tessera Interconnect Materials Inc | バンプ構造形成方法及びバンプ構造 |
US20090127686A1 (en) | 2007-11-21 | 2009-05-21 | Advanced Chip Engineering Technology Inc. | Stacking die package structure for semiconductor devices and method of the same |
KR100886100B1 (ko) | 2007-11-29 | 2009-02-27 | 앰코 테크놀로지 코리아 주식회사 | 반도체 패키지 및 그 제조 방법 |
JP2009135398A (ja) | 2007-11-29 | 2009-06-18 | Ibiden Co Ltd | 組合せ基板 |
US7902644B2 (en) | 2007-12-07 | 2011-03-08 | Stats Chippac Ltd. | Integrated circuit package system for electromagnetic isolation |
US7964956B1 (en) | 2007-12-10 | 2011-06-21 | Oracle America, Inc. | Circuit packaging and connectivity |
US8390117B2 (en) | 2007-12-11 | 2013-03-05 | Panasonic Corporation | Semiconductor device and method of manufacturing the same |
JP2009158593A (ja) | 2007-12-25 | 2009-07-16 | Tessera Interconnect Materials Inc | バンプ構造およびその製造方法 |
US20090170241A1 (en) | 2007-12-26 | 2009-07-02 | Stats Chippac, Ltd. | Semiconductor Device and Method of Forming the Device Using Sacrificial Carrier |
CN101971313B (zh) | 2008-01-30 | 2013-07-24 | 库力索法工业公司 | 导线环以及形成导线环的方法 |
US8120186B2 (en) | 2008-02-15 | 2012-02-21 | Qimonda Ag | Integrated circuit and method |
US8258015B2 (en) | 2008-02-22 | 2012-09-04 | Stats Chippac Ltd. | Integrated circuit package system with penetrable film adhesive |
US7956456B2 (en) | 2008-02-27 | 2011-06-07 | Texas Instruments Incorporated | Thermal interface material design for enhanced thermal performance and improved package structural integrity |
US7919871B2 (en) | 2008-03-21 | 2011-04-05 | Stats Chippac Ltd. | Integrated circuit package system for stackable devices |
KR101501739B1 (ko) | 2008-03-21 | 2015-03-11 | 삼성전자주식회사 | 반도체 패키지 제조 방법 |
JP5043743B2 (ja) | 2008-04-18 | 2012-10-10 | ラピスセミコンダクタ株式会社 | 半導体装置の製造方法 |
KR20090123680A (ko) | 2008-05-28 | 2009-12-02 | 주식회사 하이닉스반도체 | 적층 반도체 패키지 |
US8021907B2 (en) | 2008-06-09 | 2011-09-20 | Stats Chippac, Ltd. | Method and apparatus for thermally enhanced semiconductor package |
US7932170B1 (en) | 2008-06-23 | 2011-04-26 | Amkor Technology, Inc. | Flip chip bump structure and fabrication method |
US7859033B2 (en) | 2008-07-09 | 2010-12-28 | Eastman Kodak Company | Wafer level processing for backside illuminated sensors |
JP5339800B2 (ja) | 2008-07-10 | 2013-11-13 | 三菱電機株式会社 | 半導体装置の製造方法 |
TWI372453B (en) | 2008-09-01 | 2012-09-11 | Advanced Semiconductor Eng | Copper bonding wire, wire bonding structure and method for processing and bonding a wire |
SG177945A1 (en) | 2008-07-18 | 2012-02-28 | United Test & Assembly Ct Lt | Packaging structural member |
US8004093B2 (en) | 2008-08-01 | 2011-08-23 | Stats Chippac Ltd. | Integrated circuit package stacking system |
US20100044860A1 (en) | 2008-08-21 | 2010-02-25 | Tessera Interconnect Materials, Inc. | Microelectronic substrate or element having conductive pads and metal posts joined thereto using bond layer |
KR100997793B1 (ko) | 2008-09-01 | 2010-12-02 | 주식회사 하이닉스반도체 | 반도체 패키지 및 이의 제조 방법 |
KR20100033012A (ko) | 2008-09-19 | 2010-03-29 | 주식회사 하이닉스반도체 | 반도체 패키지 및 이를 갖는 적층 반도체 패키지 |
US7842541B1 (en) | 2008-09-24 | 2010-11-30 | Amkor Technology, Inc. | Ultra thin package and fabrication method |
US8063475B2 (en) * | 2008-09-26 | 2011-11-22 | Stats Chippac Ltd. | Semiconductor package system with through silicon via interposer |
JPWO2010041630A1 (ja) | 2008-10-10 | 2012-03-08 | 日本電気株式会社 | 半導体装置及びその製造方法 |
JP5185062B2 (ja) | 2008-10-21 | 2013-04-17 | パナソニック株式会社 | 積層型半導体装置及び電子機器 |
MY149251A (en) | 2008-10-23 | 2013-07-31 | Carsem M Sdn Bhd | Wafer-level package using stud bump coated with solder |
KR101461630B1 (ko) | 2008-11-06 | 2014-11-20 | 삼성전자주식회사 | 실장 높이는 축소되나, 솔더 접합 신뢰도는 개선되는 웨이퍼 레벨 칩 온 칩 패키지와, 패키지 온 패키지 및 그 제조방법 |
TW201023308A (en) | 2008-12-01 | 2010-06-16 | Advanced Semiconductor Eng | Package-on-package device, semiconductor package and method for manufacturing the same |
KR101011863B1 (ko) | 2008-12-02 | 2011-01-31 | 앰코 테크놀로지 코리아 주식회사 | 반도체 패키지 및 그 제조 방법 |
US7642128B1 (en) | 2008-12-12 | 2010-01-05 | Stats Chippac, Ltd. | Semiconductor device and method of forming a vertical interconnect structure for 3-D FO-WLCSP |
US7898083B2 (en) | 2008-12-17 | 2011-03-01 | Texas Instruments Incorporated | Method for low stress flip-chip assembly of fine-pitch semiconductor devices |
US8012797B2 (en) * | 2009-01-07 | 2011-09-06 | Advanced Semiconductor Engineering, Inc. | Method for forming stackable semiconductor device packages including openings with conductive bumps of specified geometries |
JP2010199528A (ja) | 2009-01-27 | 2010-09-09 | Tatsuta System Electronics Kk | ボンディングワイヤ |
JP2010177597A (ja) | 2009-01-30 | 2010-08-12 | Sanyo Electric Co Ltd | 半導体モジュールおよび携帯機器 |
US20100200981A1 (en) | 2009-02-09 | 2010-08-12 | Advanced Semiconductor Engineering, Inc. | Semiconductor package and method of manufacturing the same |
US9142586B2 (en) | 2009-02-24 | 2015-09-22 | Taiwan Semiconductor Manufacturing Company, Ltd. | Pad design for backside illuminated image sensor |
WO2010101163A1 (ja) | 2009-03-04 | 2010-09-10 | 日本電気株式会社 | 機能素子内蔵基板及びそれを用いた電子デバイス |
JP2010206007A (ja) | 2009-03-04 | 2010-09-16 | Nec Corp | 半導体装置及びその製造方法 |
US8106498B2 (en) | 2009-03-05 | 2012-01-31 | Stats Chippac Ltd. | Integrated circuit packaging system with a dual board-on-chip structure and method of manufacture thereof |
US8258010B2 (en) | 2009-03-17 | 2012-09-04 | Stats Chippac, Ltd. | Making a semiconductor device having conductive through organic vias |
US20100244276A1 (en) | 2009-03-25 | 2010-09-30 | Lsi Corporation | Three-dimensional electronics package |
US8194411B2 (en) | 2009-03-31 | 2012-06-05 | Hong Kong Applied Science and Technology Research Institute Co. Ltd | Electronic package with stacked modules with channels passing through metal layers of the modules |
US20100289142A1 (en) * | 2009-05-15 | 2010-11-18 | Il Kwon Shim | Integrated circuit packaging system with coin bonded interconnects and method of manufacture thereof |
US8020290B2 (en) | 2009-06-14 | 2011-09-20 | Jayna Sheats | Processes for IC fabrication |
TWI379367B (en) | 2009-06-15 | 2012-12-11 | Kun Yuan Technology Co Ltd | Chip packaging method and structure thereof |
US20100327419A1 (en) | 2009-06-26 | 2010-12-30 | Sriram Muthukumar | Stacked-chip packages in package-on-package apparatus, methods of assembling same, and systems containing same |
JP5214554B2 (ja) | 2009-07-30 | 2013-06-19 | ラピスセミコンダクタ株式会社 | 半導体チップ内蔵パッケージ及びその製造方法、並びに、パッケージ・オン・パッケージ型半導体装置及びその製造方法 |
US7923304B2 (en) | 2009-09-10 | 2011-04-12 | Stats Chippac Ltd. | Integrated circuit packaging system with conductive pillars and method of manufacture thereof |
US8264091B2 (en) | 2009-09-21 | 2012-09-11 | Stats Chippac Ltd. | Integrated circuit packaging system with encapsulated via and method of manufacture thereof |
US8390108B2 (en) | 2009-12-16 | 2013-03-05 | Stats Chippac Ltd. | Integrated circuit packaging system with stacking interconnect and method of manufacture thereof |
US8169065B2 (en) | 2009-12-22 | 2012-05-01 | Epic Technologies, Inc. | Stackable circuit structures and methods of fabrication thereof |
TWI392066B (zh) * | 2009-12-28 | 2013-04-01 | 矽品精密工業股份有限公司 | 封裝結構及其製法 |
US7928552B1 (en) | 2010-03-12 | 2011-04-19 | Stats Chippac Ltd. | Integrated circuit packaging system with multi-tier conductive interconnects and method of manufacture thereof |
US9496152B2 (en) | 2010-03-12 | 2016-11-15 | STATS ChipPAC Pte. Ltd. | Carrier system with multi-tier conductive posts and method of manufacture thereof |
KR101667656B1 (ko) | 2010-03-24 | 2016-10-20 | 삼성전자주식회사 | 패키지-온-패키지 형성방법 |
US8278746B2 (en) | 2010-04-02 | 2012-10-02 | Advanced Semiconductor Engineering, Inc. | Semiconductor device packages including connecting elements |
US8624374B2 (en) | 2010-04-02 | 2014-01-07 | Advanced Semiconductor Engineering, Inc. | Semiconductor device packages with fan-out and with connecting elements for stacking and manufacturing methods thereof |
US8564141B2 (en) | 2010-05-06 | 2013-10-22 | SK Hynix Inc. | Chip unit and stack package having the same |
US8217502B2 (en) | 2010-06-08 | 2012-07-10 | Stats Chippac Ltd. | Integrated circuit packaging system with multipart conductive pillars and method of manufacture thereof |
US8330272B2 (en) | 2010-07-08 | 2012-12-11 | Tessera, Inc. | Microelectronic packages with dual or multiple-etched flip-chip connectors |
KR20120007839A (ko) | 2010-07-15 | 2012-01-25 | 삼성전자주식회사 | 적층형 반도체 패키지의 제조방법 |
US8482111B2 (en) | 2010-07-19 | 2013-07-09 | Tessera, Inc. | Stackable molded microelectronic packages |
KR101683814B1 (ko) | 2010-07-26 | 2016-12-08 | 삼성전자주식회사 | 관통 전극을 구비하는 반도체 장치 |
US8580607B2 (en) | 2010-07-27 | 2013-11-12 | Tessera, Inc. | Microelectronic packages with nanoparticle joining |
US8304900B2 (en) | 2010-08-11 | 2012-11-06 | Stats Chippac Ltd. | Integrated circuit packaging system with stacked lead and method of manufacture thereof |
US8518746B2 (en) | 2010-09-02 | 2013-08-27 | Stats Chippac, Ltd. | Semiconductor device and method of forming TSV semiconductor wafer with embedded semiconductor die |
US20120063090A1 (en) | 2010-09-09 | 2012-03-15 | Taiwan Semiconductor Manufacturing Company, Ltd. | Cooling mechanism for stacked die package and method of manufacturing the same |
US8409922B2 (en) | 2010-09-14 | 2013-04-02 | Stats Chippac, Ltd. | Semiconductor device and method of forming leadframe interposer over semiconductor die and TSV substrate for vertical electrical interconnect |
US20120080787A1 (en) | 2010-10-05 | 2012-04-05 | Qualcomm Incorporated | Electronic Package and Method of Making an Electronic Package |
US8618646B2 (en) | 2010-10-12 | 2013-12-31 | Headway Technologies, Inc. | Layered chip package and method of manufacturing same |
JP2012104790A (ja) | 2010-10-12 | 2012-05-31 | Elpida Memory Inc | 半導体装置 |
US8697492B2 (en) | 2010-11-02 | 2014-04-15 | Tessera, Inc. | No flow underfill |
US8525318B1 (en) | 2010-11-10 | 2013-09-03 | Amkor Technology, Inc. | Semiconductor device and fabricating method thereof |
KR101075241B1 (ko) | 2010-11-15 | 2011-11-01 | 테세라, 인코포레이티드 | 유전체 부재에 단자를 구비하는 마이크로전자 패키지 |
US8502387B2 (en) | 2010-12-09 | 2013-08-06 | Stats Chippac Ltd. | Integrated circuit packaging system with vertical interconnection and method of manufacture thereof |
US8853558B2 (en) | 2010-12-10 | 2014-10-07 | Tessera, Inc. | Interconnect structure |
KR101215271B1 (ko) | 2010-12-29 | 2012-12-26 | 앰코 테크놀로지 코리아 주식회사 | 반도체 패키지 구조물 및 반도체 패키지 구조물의 제조 방법 |
US20120184116A1 (en) | 2011-01-18 | 2012-07-19 | Tyco Electronics Corporation | Interposer |
KR101128063B1 (ko) | 2011-05-03 | 2012-04-23 | 테세라, 인코포레이티드 | 캡슐화 층의 표면에 와이어 본드를 구비하는 패키지 적층형 어셈블리 |
US8618659B2 (en) | 2011-05-03 | 2013-12-31 | Tessera, Inc. | Package-on-package assembly with wire bonds to encapsulation surface |
US8476115B2 (en) | 2011-05-03 | 2013-07-02 | Stats Chippac, Ltd. | Semiconductor device and method of mounting cover to semiconductor die and interposer with adhesive material |
US8487421B2 (en) | 2011-08-01 | 2013-07-16 | Tessera, Inc. | Microelectronic package with stacked microelectronic elements and method for manufacture thereof |
US20130037929A1 (en) | 2011-08-09 | 2013-02-14 | Kay S. Essig | Stackable wafer level packages and related methods |
KR101800440B1 (ko) | 2011-08-31 | 2017-11-23 | 삼성전자주식회사 | 다수의 반도체 칩들을 가진 반도체 패키지 및 그 형성 방법 |
US20130049218A1 (en) | 2011-08-31 | 2013-02-28 | Zhiwei Gong | Semiconductor device packaging having pre-encapsulation through via formation |
US9177832B2 (en) | 2011-09-16 | 2015-11-03 | Stats Chippac, Ltd. | Semiconductor device and method of forming a reconfigured stackable wafer level package with vertical interconnect |
KR101906408B1 (ko) | 2011-10-04 | 2018-10-11 | 삼성전자주식회사 | 반도체 패키지 및 그 제조 방법 |
US8404520B1 (en) | 2011-10-17 | 2013-03-26 | Invensas Corporation | Package-on-package assembly with wire bond vias |
US9105552B2 (en) | 2011-10-31 | 2015-08-11 | Taiwan Semiconductor Manufacturing Company, Ltd. | Package on package devices and methods of packaging semiconductor dies |
KR101297015B1 (ko) | 2011-11-03 | 2013-08-14 | 주식회사 네패스 | 리드프레임을 이용한 팬-아웃 반도체 패키지 제조방법, 이에 의한 반도체 패키지 및 패키지 온 패키지 |
US8912651B2 (en) | 2011-11-30 | 2014-12-16 | Taiwan Semiconductor Manufacturing Company, Ltd. | Package-on-package (PoP) structure including stud bulbs and method |
US8680684B2 (en) * | 2012-01-09 | 2014-03-25 | Invensas Corporation | Stackable microelectronic package structures |
US9258922B2 (en) | 2012-01-18 | 2016-02-09 | Taiwan Semiconductor Manufacturing Company, Ltd. | PoP structures including through-assembly via modules |
US8372741B1 (en) | 2012-02-24 | 2013-02-12 | Invensas Corporation | Method for package-on-package assembly with wire bonds to encapsulation surface |
US9349706B2 (en) | 2012-02-24 | 2016-05-24 | Invensas Corporation | Method for package-on-package assembly with wire bonds to encapsulation surface |
US20130234317A1 (en) | 2012-03-09 | 2013-09-12 | Taiwan Semiconductor Manufacturing Company, Ltd. | Packaging Methods and Packaged Semiconductor Devices |
US9082763B2 (en) | 2012-03-15 | 2015-07-14 | Taiwan Semiconductor Manufacturing Company, Ltd. | Joint structure for substrates and methods of forming |
US8835228B2 (en) | 2012-05-22 | 2014-09-16 | Invensas Corporation | Substrate-less stackable package with wire-bond interconnect |
US9171790B2 (en) | 2012-05-30 | 2015-10-27 | Taiwan Semiconductor Manufacturing Company, Ltd. | Package on package devices and methods of packaging semiconductor dies |
US9502390B2 (en) | 2012-08-03 | 2016-11-22 | Invensas Corporation | BVA interposer |
US8828860B2 (en) | 2012-08-30 | 2014-09-09 | International Business Machines Corporation | Double solder bumps on substrates for low temperature flip chip bonding |
KR101419597B1 (ko) | 2012-11-06 | 2014-07-14 | 앰코 테크놀로지 코리아 주식회사 | 반도체 디바이스 및 그 제조 방법 |
US8878353B2 (en) | 2012-12-20 | 2014-11-04 | Invensas Corporation | Structure for microelectronic packaging with bond elements to encapsulation surface |
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US20110042810A1 (en) | 2011-02-24 |
US9570416B2 (en) | 2017-02-14 |
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US20090104736A1 (en) | 2009-04-23 |
US20150102508A1 (en) | 2015-04-16 |
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US9153562B2 (en) | 2015-10-06 |
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US8531020B2 (en) | 2013-09-10 |
US20160035692A1 (en) | 2016-02-04 |
US8525314B2 (en) | 2013-09-03 |
KR20070085700A (ko) | 2007-08-27 |
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JP5592055B2 (ja) | 2014-09-17 |
KR101313391B1 (ko) | 2013-10-01 |
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