CN100593822C - Magnetic memory cell structure and magnetic memory device - Google Patents
Magnetic memory cell structure and magnetic memory device Download PDFInfo
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- CN100593822C CN100593822C CN200610059116A CN200610059116A CN100593822C CN 100593822 C CN100593822 C CN 100593822C CN 200610059116 A CN200610059116 A CN 200610059116A CN 200610059116 A CN200610059116 A CN 200610059116A CN 100593822 C CN100593822 C CN 100593822C
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Abstract
The invention relates to a magnetic storage device with a magnetic storage unit structure suitable for double-state mode accessing operation, the magnetic storage device comprises a magnetic fixed laminated layer as a portion of a basic layer structure, a tunnel insulative layer positioned on the magnetic fixed laminated layer, a magnetic free laminated layer positioned on the tunnel insulative layer, a magnetic bias laminated layer positioned on the magnetic free laminated layer. Wherein the magnetic bias laminated layer provides a bias magnetic field to the magnetic free laminated layer so that a double-state operation region is approached to a zero-point of the magnetic field. In addition, actions of the magnetic field generated by the magnetic bias laminated layer also comprise reducing a direct region adjacent to the double-state operation region.
Description
Technical field
The invention relates to a kind of magnetic storage technology, and, can under low drive current, operate particularly relevant for a kind of structure of magnetic memory cell.
Background technology
Magnetic storage, for example (Magnetic Random AccessMemory also is a kind of non-volatility memorizer MRAM) to magnetic RAM, and advantages such as non-volatile, highly dense intensity, high read or write speed, radioresistance line are arranged.Be to utilize the adjacent magnetization vector of the magnetisable material of insulation course then of wearing, owing to parallel or antiparallel size of arranging the magnetic resistance that produces writes down 0 or 1 data.When writing data, general employed method is two electric current lines, bit line (Bit Line for example, BL) and write character line (Write Word Line, WWL) the induced magnetism place magnetic memory cell structure of occuring simultaneously and to choose, by changing free layer magnetization vector direction, change its magnetoelectricity resistance.And reading storage during data, and allow the magnetic memory cell structure inflow current of choosing, can judge the digit value of storage data from the resistance value that reads.
Fig. 1 illustrates the basic structure of a magnetic memory cell.Consulting Fig. 1, access one magnetic memory cell structure, also is the electric current line 100,102 that needs intersection and feed suitable electric current, and it for example is called character line and bit line again according to the mode of operation.After feeding electric current, two leads can produce the magnetic field of two directions, to obtain desired magnetic field size and direction, to be applied on the magnetic memory cell structure 104.Magnetic memory cell structure 104 is layered structures, comprises that a magnetic fixed bed (magnetic pinned layer) has fixing magnetization vector (magnetization) at a predetermined direction, or total magnetic moment (totalmagnetic moment).Utilize the size of magnetic resistance, come reading of data.By output electrode 106,108, can read the data that this magnetic memory cell structure is deposited again.About the details of operation of magnetic storage, be that those skilled in the art can understand, do not continue to describe.
Fig. 2 illustrates the memory mechanism of magnetic storage.In Fig. 2, magnetic fixed bed 104a has fixing magnetic moment direction 107.Magnetic free layer 104c is positioned at magnetic fixed bed 104a top, is isolated by an insulation course 104b in the middle of it.Magnetic free layer 104c has a magnetic moment direction 108a or a 108b.Because magnetic moment direction 107 is parallel with magnetic moment direction 108a, the magnetic resistance of its generation is for example represented the data of " 0 ", on the contrary magnetic moment direction 107 and magnetic moment direction 108b antiparallel, and the magnetic resistance of its generation is for example represented the data of " 1 ".
For a magnetic memory cell structure, the relation of its magnetic resistance (R) and magnetic field H size, as shown in Figure 3.Solid line is represented the magnetic resistance line of single magnetic memory cell structure.Yet magnetic storage device can comprise a plurality of magnetic memory cell structures, and the upset field size of its each magnetic memory cell structure can be variant, so the magnetic resistance line can be just like the variation of dotted line, and this can cause access errors.Fig. 4 illustrates the array structure of magnetic conventional memory cell structure.The left figure of Fig. 4 is an array structure, for example by applying two direction magnetic field H x, Hy, to 140 accesses of magnetic memory cell structure.Right figure is the star-plot (Asteroid curve) of free layer.In the solid line zone,, can not change the direction of magnetic memory cell structure 140 magnetization vectors because magnetic field is little.And the magnetic field in the extra-regional limited area of solid line can be suitable for the operation of magnetic field upset.If magnetic field will interfere with contiguous unit too greatly, also be to be not suitable for using.Therefore, generally with the magnetic field of operating area 144 as magnetic manipulation field.Yet because other magnetic memory cell structure 142 also can be experienced the magnetic field that applies, and because the operating conditions of contiguous magnetic memory cell structure 142 changes, this magnetic field that applies also may change the storage data of other magnetic memory cell structures 142.Therefore, as the free layer 104c of the individual layer of Fig. 2, have the possibility of access errors.
At problem such as above-mentioned, for example United States Patent (USP) the 6th, 545, No. 906, in order to reduce the interference cases of adjacent unit when writing data, free layer replaces the individual layer ferromagnetic material with a magnetic free laminated 166 of ferromagnetic (FM)/nonmagnetic metal (M)/ferromagnetic (FM) three-decker, as shown in Figure 5, at non-magnetic metal layer 152 bilevel ferromagnetic metal layers 150,154,, form the magnetic line of force of sealing with arranged anti-parallel.Magnetic below is fixing laminated 168, by one wear the tunnel insulation course (tunnel barrier layer, T) 156, separate with magnetic free laminated 166.Magnetic fixing laminated 168 comprises fixed bed on (toppinned layer, TP) 158, one non-magnetic metal layer 160 and once fixed bed (bottom pinnedlayer, BP) 162.At last fixed bed and following fixed bed fixing magnetization vector is arranged.Also having a basic unit 164 in addition in the bottom, for example is inverse ferric magnetosphere.
Magnetic free laminated 166 at three-decker, character line BL with write the incorgruous axle in relative free laminated 166 the magnetic field of bit line WWL (magnetic anisotropic axis), make the angle of 45 degree, the incorgruous direction of principal axis in its magnetic field is exactly so-called easy axle (easy axis) direction.So, character line BL is with to write bit line WWL can be respectively laminated 166 to freedom, according to a precedence relationship, apply with easy axle clamp angle be the magnetic fields of 45 degree, to rotate free laminated 166 magnetization vector.Fig. 6 illustrates the sequential that magnetic field applies.In Fig. 6, the relative direction of last figure easy axle of expression (shown in the double-head arrow) and magnetic direction.Figure below is for character line BL and writes the sequential that bit line WWL applies electric current.Electric current I wherein
WRepresentative conference produces the magnetic field of the positive 45 degree directions of phase commute axle, promptly is the Z-axis of last figure, electric current I
BRepresentative conference produces the magnetic field of the negative 45 degree directions of phase commute axle, promptly is the transverse axis of last figure.According to the sequential that applies electric current, then free laminated 166 the direction of magnetization of two ferromagnetic layers 150,154 up and down can be reversed.This sequential that applies electric current is to reach by two states, therefore is also referred to as bifurcation pattern (toggle mode) operation.Every bifurcation pattern operation through once, the direction of magnetization of free laminated 166 the magnetosphere of disome up and down 150,154 can be reversed once.Because the magnetization vector direction of last fixed bed 158 is fixed, can be parallel or be antiparallel to the magnetization vector direction of fixed bed 158 in the magnetization vector direction of ferromagnetic layer 154 down, therefore can store one two bit data.
Fig. 7 illustrates in the magnetization vector of two ferromagnetic layers 150,154 up and down of freedom laminated 166 and the reaction of externally-applied magnetic field size.Fig. 8 illustrates the respective operations zone of externally-applied magnetic field.Consult Fig. 7, thin arrow is represented free laminated 166 the direction of the magnetization vector of two ferromagnetic layers 150,154 up and down.When the little situation of externally-applied magnetic field H, the direction of two magnetization vectors can not be changed, and promptly is not Zone switched 170 of Fig. 8.When externally-applied magnetic field H increases to appropriate value, the direction of two magnetization vectors can reach an equilibrium state in magnetic field H, therefore have a subtended angle, the magnetic field range of this moment is exactly the biconditional operation zone 174 under the bifurcation pattern, the rotation of its magnetization vector is the magnetic field that utilizes orthogonal two directions, according to the variation (referring to Fig. 6) of a specific time sequence, with the direction of rotation resultant vector, this resultant vector is exactly a magnetic field H.Therefore magnetization vector is that mode with the stage is reversed.Yet if magnetic field H is too big, the direction of two magnetization vectors just is directed to the direction identical with magnetic field H always, and the operating area that this neither be suitable is not drawn at Fig. 8.Again, between biconditional operation zone 174 and not Zone switched 170, have directly Zone switched (a direct switch region) 172, abbreviate direct zone again as.Because directly Zone switched 172 control is difficult for, therefore be not suitable for the operation of magnetic memory cell structure access yet.
Though the interference problem of being mentioned before above-mentioned biconditional operation can solve as can be seen from Figure 8, enter biconditional operation zone 174, its needed electrorheological is big.Therefore, another known technology, as United States Patent (USP) the 6th, 545, No. 906 content is described, the biconditional operation zone 174 of first quartile can be moved toward magnetic field zero, so can the reduction operation electric current.Fig. 9 illustrates the conventional art synoptic diagram that reduces operating current.Consult Fig. 9, the basic structure of magnetic memory cell structure is still similar with Fig. 5, shown in left figure, its main difference be the magnetization vector 180 that will descend fixed bed 162, magnetization vector 182 with respect to last fixed bed 158 increases, for example increase thickness, the value of total magnetic moment (total magnetic moment) is increased.Owing to the magnetization vector imbalance of following fixed bed 162 with last fixed bed 158, can produce an outer stray field (fringe magnetic field), can produce a magnetic field bias voltage (bias filed) 184 to freedom laminated 166, the biconditional operation zone of first quartile can be moved toward magnetic field zero, its result dwindles into a distance 186.Therefore, the write operation electric current just can reduce.
The operation of the above-mentioned Fig. 9 of the more deep again discussion of the present invention finds that though by applying magnetic field bias voltage 184, toward the magnetic field zero pulling, it also can cause the increase in direct control zone simultaneously the biconditional operation zone.If direct control area spans magnetic field zero also can cause operation failure.Therefore, reducing of write operation electric current also can be limited in the direct control zone.The design that the present invention proposes to solve is after will being described in.
Summary of the invention
The invention provides a kind of magnetic memory cell structure, under the bifurcation pattern, operate, can reduce the directly scope in zone, therefore can more reduce operating current effectively.
The invention provides a kind of magnetic storage device, utilize a plurality of above-mentioned magnetic memory cell structures, constitute a storage array.Magnetic storage device can reach high storage density, high operating speed and low behaviour's electric current at least.
The present invention proposes a kind of magnetic memory cell structure, is applicable to the magnetic storage device of bifurcation pattern formula accessing operation, comprises that magnetic is fixing laminated, as the part of the base layer structure of this magnetic memory cell structure.Wear the tunnel insulation course be positioned at this magnetic fixing laminated on.Magnetic is free laminatedly to be positioned at this and to wear on the tunnel insulation course.Magnetic biasing is laminated, be positioned at this magnetic free laminated on.Wherein, the laminated bias voltage magnetic field that provides of magnetic biasing is laminated to this magnetic freedom, so that magnetic field zero is more approached in the biconditional operation zone.
According to the described magnetic memory cell structure of an embodiment, above-mentioned magnetic biasing is laminated to be coincided by a non-magnetic metal layer, a ferromagnetic metal layer and an antiferromagnetism metal level to form.Again for example, non-magnetic metal layer be positioned at this magnetic free laminated on.The ferromagnetic metal layer is positioned on the non-magnetic metal layer.The antiferromagnetism metal level is positioned on this ferromagnetic metal layer.
According to the described magnetic memory cell structure of an embodiment, the free laminated magnetic easy axis direction of a magnetic easy axis of above-mentioned antiferromagnetism metal level (easy axis) direction and this magnetic is a configured in parallel.
According to the described magnetic memory cell structure of an embodiment, the free laminated magnetic easy axis direction of a magnetic easy axis direction of above-mentioned ferromagnetic metal layer and this magnetic is a configured in parallel.
According to the described magnetic memory cell structure of an embodiment, above-mentioned this magnetic free laminated be by ferromagnetic metal layer on once ferromagnetic metal layer, the non-magnetic metal layer and coincide in regular turn become.
According to the described magnetic memory cell structure of an embodiment, above-mentioned magnetic is fixing, and laminated to put on the free laminated total magnetic moment (magnetic moment) of this magnetic almost nil.
According to the described magnetic memory cell structure of an embodiment, during above-mentioned magnetic freedom was laminated, total magnetic moment of ferromagnetic metal layer was greater than a total magnetic moment of ferromagnetic metal layer on this under it.
According to the described magnetic memory cell structure of an embodiment, the laminated compensating field that produces of above-mentioned magnetic biasing is to the ferromagnetic metal layer is different with the action intensity of last ferromagnetic metal layer down, so that magnetic field zero is more approached in the biconditional operation zone.
According to the described magnetic memory cell structure of an embodiment, laminated this bias voltage magnetic field that produces of above-mentioned magnetic biasing dwindles a direct zone that is adjacent to this biconditional operation zone.
The present invention provides another kind of magnetic memory cell structure again, is applicable to a magnetic storage device of bifurcation pattern formula (ToggleModel) accessing operation.The magnetic memory cell structure comprises that a magnetic is fixing laminated, as the part of a base layer structure of this magnetic memory cell structure.One wear the tunnel insulation course be positioned at this magnetic fixing laminated on.One magnetic is free laminatedly to be positioned at this and to wear on the tunnel insulation course.Wherein, the free laminated ferromagnetic metal layer on ferromagnetic metal layer, the non-magnetic metal layer and that comprises of magnetic.One total magnetic moment of following ferromagnetic metal layer is less than a total magnetic moment of last ferromagnetic metal layer.
According to the described magnetic memory cell structure of an embodiment, above-mentioned magnetic field bias voltage dwindles a direct zone that is adjacent to this biconditional operation zone.
The present invention provides a kind of magnetic storage device again, utilizes a plurality of above-mentioned magnetic memory cell structures, constitutes a storage array.Wherein, magnetic storage device more comprises a circuit structure, according to the configuration of this array, with the one of the described a plurality of magnetic memory cell structures of access.
The present invention gives this magnetic freedom laminated because of employing more is provided with the laminated compensating field that applies of a magnetic biasing on the magnetic freedom is laminated, to dwindle the size in direct zone, therefore can make the biconditional operation zone more near magnetic field zero, with effective reduction operation electric current.In addition, also can adopt free laminated magnetization vector (magnetization) size under no external magnetic field of direct change magnetic, the size that can reduce direct zone is so arranged.
State with other purposes, feature and advantage and can become apparent on the present invention for allowing, preferred embodiment cited below particularly, and cooperate appended graphicly, be described in detail below.
Description of drawings
Fig. 1 illustrates the basic structure of a magnetic memory cell structure;
Fig. 2 illustrates the memory mechanism of magnetic storage;
Fig. 3 illustrates the magnetic resistance (R) of magnetic memory cell structure and the relation of magnetic field H size;
Fig. 4 illustrates the array structure of traditional magnetic memory cell structure;
Fig. 5 illustrates the basic structure of traditional magnetic memory cell structure;
Fig. 6 illustrates the sequential that magnetic field applies;
Fig. 7 illustrates in the direction of magnetization of two ferromagnetic layers 150,154 up and down of freedom laminated 166 and the reaction of externally-applied magnetic field;
Fig. 8 illustrates the respective operations zone of externally-applied magnetic field;
Fig. 9 illustrates the conventional art synoptic diagram that reduces operating current;
Figure 10 illustrates the experimental result of the phenomenon that produces according to conventional art;
Figure 11 illustrates operating area under the coordinate of magnetic field;
Figure 12 illustrates the causal investigation of the present invention to the phenomenon that causes Figure 11;
Figure 13 illustrates the present invention's another investigation to the reason of the phenomenon that causes Figure 11;
Figure 14 illustrates according to the embodiment of the invention, magnetic memory cell structural profile synoptic diagram;
Figure 15 illustrates according to one embodiment of the invention, by the laminated synoptic diagram that the compensation mechanism that produces is set of magnetic biasing;
Figure 16 illustrates according to one embodiment of the invention, the realistic simulation result of magnetic memory cell structure;
Figure 17 illustrates the magnetic memory cell structure of another embodiment of the present invention;
Figure 18 illustrates according to one embodiment of the invention, the analog result under an example of the design of Figure 17;
The main element symbol description
100,102: electric current line 300: magnetic is fixing laminated
104: magnetic memory cell structure 302: wear the tunnel insulation course
106,108: electrode 304: ferromagnetic metal layer
140,142: magnetic memory cell structure 306: non-magnetic metal layer
144: operating area 308: ferromagnetic metal layer
150: ferromagnetic metal layer 310: non-magnetic metal layer
152: non-magnetic metal layer 312: ferromagnetic metal layer
154: ferromagnetic metal layer 314: antiferromagnetic metal level
156: wear tunnel insulation course 316: the magnetic freedom is laminated
158: go up fixed bed 318: magnetic biasing is laminated
160: nonmagnetic metal 320: magnetic is fixing laminated
162: following fixed bed 330: magnetic is fixing laminated
164: basic unit
166: the magnetic freedom is laminated
168: magnetic is fixing laminated
170: not Zone switched
172: directly Zone switched
174: the biconditional operation zone
180,182: magnetization vector
184: the magnetic field bias voltage
186: distance
190: the magnetic free layer
192: the magnetic fixed bed
220: the biconditional operation zone
202: directly regional
204: not Zone switched corner
206: the magnetic free layer
208: directly regional
210: the biconditional operation zone
212,214: the zone
Embodiment
Brought forward is stated, and the present invention does an into research back discovery to the conventional art of Fig. 9, though by applying magnetic field bias voltage 184, toward the magnetic field zero pulling, it also can cause the increase in direct control zone simultaneously, makes the write operation electric current more to reduce the biconditional operation zone.Below can describe the research of the present invention earlier, find out some possible reasons, therefore also propose the design that solves conventional art.For some embodiment, be the usefulness that is used for describing the present invention, rather than be used for limiting the scope of the invention.
Figure 10 illustrates the experimental result of the phenomenon that produces according to conventional art.Consult Figure 10, last figure is the synoptic diagram of traditional magnetic memory cell structure, comprises that magnetic is fixing laminated 192, and magnetic above it free laminated 190.Being of uniform thickness of the ferromagnetic layer up and down of magnetic free laminated 190, and the size of magnetization vector is the same.The following fixed bed thickness of magnetic fixing laminated 192 is bigger than last fixed bed, and therefore total magnetic moment of fixed bed is bigger down, can produce an outer stray field, acts on magnetic free laminated 190.By the relation in the magnetic resistance of figure below and magnetic field as can be seen, though the starting point in the biconditional operation zone on the right is approaching to magnetic field zero, it still obviously exists very big by direct regional 194.Figure 11 illustrates operating area under the coordinate of magnetic field.In Figure 11, the 220 trend magnetic field zero skews of the biconditional operation of first quartile zone, and the biconditional operation zone of third quadrant also is offset according to equidirectional simultaneously.Figure 12 illustrates the causal investigation of the present invention to the phenomenon that causes Figure 11.Consult Figure 12, what illustrate is the magnetic resistance seen and the relation in magnetic field on 45 degree.Dotted line position is that magnetic field is zero position, and directly zone 208 obviously appears between biconditional operation zone 210 and the not Zone switched corner 204, otherwise in the place in zone 214, directly regional extent is dwindled.The zone 212 is to belong to the too big relation in magnetic field in addition, causes the magnetization vector of two ferromagnetic layers up and down of magnetic free layer 206 parallel each other.The present invention further investigates the effect of the traditional magnetic memory cell structure that illustrates as lower-left figure, and then proposes possible being explained as follows.Directly zone 208 is owing to magnetic is fixed the laminated effect of two ferromagnetic layers up and down to magnetic free laminated 206, because the relation of distance acts on the magnetic field difference on it, wherein lower floor experiences bigger magnetic field because compare approaching.So, when under the positive flux field environment on dotted line the right, direct regional 208 directions to magnetic field zero are increased.Otherwise under the negative fluxfield environment on the dotted line left side, directly the zone is just dwindled in a large number, even disappears.
Figure 13 illustrates the present invention's another investigation to the reason of the phenomenon that causes Figure 11.Consult Figure 13, left figure is corresponding Figure 12, is used for comparing with the right figure of another situation.By the modeling effort result as can be seen, free laminated effect is when other direction applies magnetic biasing to magnetic when the fixing laminated outer stray field that produces of magnetic, directly zone appears in the negative fluxfield zone meeting on the dotted line left side, and can disappear at the direct regional of positive flux field zone on dotted line the right.The biconditional operation zone is moved along the direction of+45 degree.Therefore, above-mentioned marginal magnetic field may be to change the directly former therefore one in zone.
After investigating out the reason that causes direct regional change, the method that the present invention proposes to solve.Figure 14 illustrates according to the embodiment of the invention, magnetic memory cell structural profile synoptic diagram.Magnetic memory cell structure of the present invention can replace the magnetic memory cell 104 of Fig. 1, cooperates the circuit structure of access memory cell array, can constitute a magnetic storage device, and it uses bifurcation pattern formula accessing operation.Consult Figure 14, the magnetic memory cell structure comprises that a magnetic is fixing laminated 300, as the part of base layer structure.One wears tunnel insulation course 302 is positioned on the magnetic fixing laminated 300.One magnetic free laminated 316 is positioned at wears on the tunnel insulation course 302.One magnetic biasing is laminated 318, is positioned on the magnetic free laminated 316.Wherein, magnetic biasing laminated 318 can provide a bias voltage magnetic field free laminated 316 to magnetic, so that a bifurcation operating area more approaches a magnetic field zero.Simultaneously, also can reduce direct zone again.So, a magnetic field zero can be more approached in the biconditional operation zone again.Comparatively speaking, operating current can be lowered effectively.Particularly, the write operation electric current can carry out write activity under the condition of low current.
Above-mentioned magnetic is free laminated 316, can be traditional three-decker for example, comprises down ferromagnetic metal layer 304, non-magnetic metal layer 306, goes up ferromagnetic metal layer 308.In addition, the present invention increases magnetic biasing laminated 318 on magnetic free laminated 316.This magnetic biasing laminated 318 for example comprises non-magnetic metal layer 310, ferromagnetic metal layer 312 and antiferromagnetism metal level 314.This position of three layers relation for example is that non-magnetic metal layer 310 is positioned on the magnetic free structure layer 316.Ferromagnetic metal layer 312 is positioned on the non-magnetic metal layer 310.Antiferromagnetism metal level 314 is positioned on the ferromagnetic metal layer 312.Yet this is not unique mode.For example, ferromagnetic metal layer 312 can be exchanged with the order of antiferromagnetism metal level 314.Again, the effect of magnetic biasing laminated 318 is to produce the magnetic field bias voltage, puts on the magnetic free laminated 316.Therefore, ferromagnetic metal layer 312 and antiferromagnetism metal level 314 also can by the feeromagnetic metal of simple layer or more multi-layered feeromagnetic metal be constituted.Antiferromagnetism metal level 314 itself contains equal quantities but the magnetization vector of different directions, and therefore total magnetic moment is zero, yet helps the magnetization vector of ferromagnetic metal layer 312 is fixed.Non-magnetic metal layer 310 is that buffer action is arranged, and produces strong magnetic couplings to avoid too close.In other words, non-magnetic metal layer 310 neither necessary member.That is to say that the structure of magnetic biasing laminated 318 as long as can produce suitable magnetic field bias voltage, does not need specific structure.
And for example shown in the arrow, a magnetic easy axis direction of a magnetic easy axis of antiferromagnetism metal level 314 (easy axis) direction and magnetic free laminated 316 is configured in parallel.Again, the free laminated magnetic easy axis direction of a magnetic easy axis direction of ferromagnetic metal layer 312 and this magnetic also is a configured in parallel.Wherein, the magnetization vector direction of ferromagnetic metal layer 312 is to fix with the reciprocation of antiferromagnetism metal level 314 by ferromagnetic metal layer 312.
Magnetic fixing laminated 300 for example is general three-decker in addition, is zero but adjustment makes a total magnetic vector that puts on magnetic free laminated 316, and it for example can utilize thickness adjustment.Be exactly Zong magnetic moment is zero physical phenomenon, magnetic fixing laminated 300 does not have traditional outer stray field, it is laminated to have influence on this magnetic freedom.The present invention utilizes the laminated 318 pairs of magnetic free laminated 316 of magnetic biasing to apply bias voltage, so that the biconditional operation zone is approaching toward magnetic field zero.In order to reduce the scope in direct zone, can cooperate laminated 318 bias effects that produced of magnetic biasing to adjust magnetic free laminated 316 again.For example, the magnetization vector of the following ferromagnetic metal layer 304 in the magnetic free laminated 316 can be adjusted a total magnetic moment that makes greater than last ferromagnetic metal layer 308.So, the operating distance effect of the magnetization vector of magnetic biasing laminated 318 can be reduced or eliminate, and therefore also reduces the directly scope in zone simultaneously.Operating current can more be reduced more near magnetic field zero in the biconditional operation zone therefore.
Figure 15 illustrates according to one embodiment of the invention, by the laminated synoptic diagram that the compensation mechanism that produces is set of magnetic biasing.Consult Figure 15, do suitable adjustment owing to adjust the magnetization vector of two ferromagnetic metal layers up and down of magnetic free laminated 316, free laminated 316 to offset from the laminated 318 pairs of magnetic of magnetic biasing, because the different actions that distance relation produced.Its result as shown at right.Significantly, be offset toward magnetic field zero (some line position) in the biconditional operation zone of first quartile.Simultaneously, the direct zone of first quartile also is eliminated effectively.
The material of the non-magnetic metal layer 310 of above-mentioned magnetic biasing laminated 318 for example is Cu, Ru, Ag or other conductive metal.The material of ferromagnetic metal layer 312 for example is Fe, Co, Ni, CoFe, CoFeB or other ferromagnetic metals.The material of antiferromagnetism metal level 314 for example is RtMn, MnIr, CoO or other antiferromagnetism metals.The material of wearing tunnel insulation course 302 for example is an aluminium oxide.The present invention increases the making of magnetic biasing laminated 318, can be compatible on processing procedure with conventional process, can reach easily, and can not cause the problem of making difficulty.
Figure 16 illustrates according to one embodiment of the invention, the actual experiment result of magnetic memory cell structure.Consult Figure 16, wear six layers material on the tunnel insulation course AlOx shown in left figure.In addition, the material of each layer is NiFe, Ru, NiFe, Ru, IrMn, CoFe in regular turn, and its thickness for example is 30,20,28.5,20,60,15 in regular turn, and unit is a dust (=10
-8Cm).From the experimental result of right figure as can be seen, the biconditional operation zone is toward the magnetic field zero skew, and direct zone not haply.Therefore, the memory cell structure that the present invention proposes can reach purpose of the present invention really.
Again, according to identical consideration, the present invention proposes the design that changes again.Figure 17 illustrates the magnetic memory cell structure of another embodiment of the present invention.Consult Figure 17, to reduce the directly effect in zone in order reaching, and the bifurcation zone to be offset towards magnetic field zero, it is laminated that the present invention proposes only to adjust the magnetic freedom.Because directly the zone is because the fixing laminated different institutes of effect to free laminated two ferromagnetic metal layers up and down of magnetic of magnetic cause, and is not increasing the laminated setting of magnetic biasing under, also can adjust magnetic free laminated in about total magnetic moment of two ferromagnetic layers.Yu Zuotu for example by the adjustment of thickness, makes the magnetization vector m of ferromagnetic metal layer
1Total magnetic moment m greater than following ferromagnetic metal layer
2(m
1＞m
2).Its result, the fixing laminated effect to following ferromagnetic metal layer of magnetic is bigger than the effect of last ferromagnetic metal layer.Yet at m
1＞m
2Condition under, its can equilibrium magnetism fixing laminated difference that causes.Its result also can be offset towards magnetic field zero in the biconditional operation zone of first quartile as shown at right, and directly not regional haply.
Figure 18 illustrates according to one embodiment of the invention, the experimental result under an example of the design of Figure 17.Consult Figure 18, two layers the thickness up and down of magnetic fixing laminated 330 for example is set at 30 dusts and 40 dusts, to produce an outer stray field.Two layers the thickness up and down of magnetic free laminated 316 for example is set at 34.5 dusts and 30 dusts.Other three figure are experimental results repeatedly.By experimental result as can be seen the design of present embodiment also can reach similar effects.
In sum, the present invention to meeting influence directly some factors in zone do study in great detail with understand after, design as Figure 14 and Figure 17 is proposed, adjust by the making of magnetic biasing laminated 318 or to the magnetization vector of magnetic free laminated 316, the scope in direct zone can be effectively reduced, therefore operating current can be reduced.
Though the present invention discloses as above with preferred embodiment; right its is not in order to limit the present invention; any those skilled in the art; without departing from the spirit and scope of the invention; when can doing a little change and retouching, so the present invention's protection domain attached claim scope person of defining after looking is as the criterion.
Claims (23)
1. magnetic memory cell structure is applicable to a magnetic storage device of bifurcation pattern formula accessing operation, and this magnetic memory cell structure comprises:
One magnetic is fixing laminated, as the part of a base layer structure of this magnetic memory cell structure;
One wears the tunnel insulation course, be positioned at this magnetic fixing laminated on;
One magnetic freedom is laminated, and be positioned at this and wear on the tunnel insulation course, and
One magnetic biasing is laminated, be positioned at this magnetic free laminated on,
Wherein, the laminated bias voltage magnetic field that provides of this magnetic biasing is laminated to this magnetic freedom, so that a bifurcation operating area more approaches a magnetic field zero.
2. magnetic memory cell structure according to claim 1, wherein laminated being coincided by a non-magnetic metal layer, a ferromagnetic metal layer and an antiferromagnetism metal level of this magnetic biasing forms.
3. as the magnetic memory cell structure as described in the claim 2, wherein this non-magnetic metal layer be positioned at this magnetic free laminated on, this ferromagnetic metal layer and this antiferromagnetism metal level, order or instead coincide in proper order is positioned on this non-magnetic metal layer.
4. as the magnetic memory cell structure as described in the claim 2, wherein the free laminated magnetic easy axis direction of a magnetic easy axis direction of this antiferromagnetism metal level and this magnetic is a configured in parallel.
5. as the magnetic memory cell structure as described in the claim 2, wherein the free laminated magnetic easy axis direction of a magnetic easy axis direction of this ferromagnetic metal layer and this magnetic is a configured in parallel.
6. as the magnetic memory cell structure as described in the claim 2, wherein a magnetization vector direction of this ferromagnetic metal layer is to fix by the reciprocation of this ferromagnetic metal layer and this antiferromagnetism metal level.
7. as the magnetic memory cell structure as described in the claim 2, wherein this magnetic free laminated be by ferromagnetic metal layer on once ferromagnetic metal layer, the non-magnetic metal layer and coincide in regular turn become.
8. as the magnetic memory cell structure as described in the claim 7, wherein fixing laminated to put on the free laminated total magnetic moment of this magnetic be zero to this magnetic.
9. as the magnetic memory cell structure as described in the claim 8, wherein this magnetic free laminated in, a total magnetic moment of this time ferromagnetic metal layer is greater than a total magnetic moment of ferromagnetic metal layer on this.
10. as the magnetic memory cell structure as described in the claim 9, wherein laminated this bias voltage magnetic field that produces of this magnetic biasing is different with the action intensity that should go up ferromagnetic metal layer to this time ferromagnetic metal layer, so that this magnetic field zero is more approached in this biconditional operation zone.
11. magnetic memory cell structure according to claim 1, wherein, laminated this bias voltage magnetic field that produces of this magnetic biasing dwindles a direct zone that is adjacent to this biconditional operation zone.
12. a magnetic memory cell structure is applicable to a magnetic storage device of bifurcation pattern formula accessing operation, this magnetic memory cell structure comprises:
One magnetic is fixing laminated, as the part of a base layer structure of this magnetic memory cell structure;
One wears the tunnel insulation course, be positioned at this magnetic fixing laminated on; And
One magnetic freedom is laminated, and be positioned at this and wear on the tunnel insulation course, the free laminated ferromagnetic metal layer on ferromagnetic metal layer, the non-magnetic metal layer and that comprises of this magnetic wherein,
Wherein one of this time ferromagnetic metal layer total magnetic moment is less than a total magnetic moment of ferromagnetic metal layer on this, and this magnetic is fixed laminated action to this time ferromagnetic metal layer, greater than action to ferromagnetic metal layer on this, so that a bifurcation operating area is produced a magnetic field bias voltage, make the trend one magnetic field zero skew of biconditional operation zone.
13. as the magnetic memory cell structure as described in the claim 12, wherein this magnetic field bias voltage dwindles a direct zone that is adjacent to this biconditional operation zone.
14. a magnetic storage device adopts bifurcation pattern formula accessing operation, comprising:
A plurality of magnetic memory cell structures dispose with an array; And
One circuit structure, according to the configuration of this array, with the one of the described a plurality of magnetic memory cell structures of access,
Each of wherein said a plurality of magnetic memory cell structures comprises:
One magnetic is fixing laminated, as the part of a base layer structure of this magnetic memory cell structure;
One wears the tunnel insulation course, be positioned at this magnetic fixing laminated on;
One magnetic freedom is laminated, and be positioned at this and wear on the tunnel insulation course, and
One magnetic biasing is laminated, be positioned at this magnetic free laminated on, wherein the laminated compensating field that provides of this magnetic biasing is laminated to this magnetic freedom, so that a bifurcation operating area more approaches a magnetic field zero.
15. as the magnetic storage device as described in the claim 14, wherein laminated being coincided by a non-magnetic metal layer, a ferromagnetic metal layer and an antiferromagnetic metal level of this magnetic biasing forms.
16. as the magnetic storage device as described in the claim 15, wherein this non-magnetic metal layer be positioned at this magnetic free laminated on, this ferromagnetic metal layer and this antiferromagnetism metal level, order or instead coincide in proper order is positioned on this non-magnetic metal layer.
17. as the magnetic storage device as described in the claim 15, wherein the free laminated magnetic easy axis direction of a magnetic easy axis direction of this antiferromagnetic metal level and this magnetic is a configured in parallel, and the laminated magnetic easy axis direction of a magnetic easy axis direction of this ferromagnetic metal layer and this magnetic freedom is a configured in parallel.
18. as the magnetic storage device as described in the claim 15, wherein a magnetization vector direction of this ferromagnetic metal layer is to fix with the reciprocation of this antiferromagnetic metal level by this ferromagnetic metal layer.
19. as the magnetic storage device as described in the claim 15, wherein this magnetic free laminated be by ferromagnetic metal layer on once ferromagnetic metal layer, the non-magnetic metal layer and coincide in regular turn become.
20. as the magnetic storage device as described in the claim 14, wherein fixing laminated to put on the free laminated total magnetic vector of this magnetic be zero to this magnetic.
21. as the magnetic storage device as described in the claim 14, wherein laminated this compensating field that produces of this magnetic biasing dwindles a direct zone that is adjacent to this biconditional operation zone.
22. a magnetic storage device adopts bifurcation pattern formula accessing operation, comprising:
A plurality of magnetic memory cell structures dispose with an array; And
One circuit structure, according to the configuration of this array, with the one of the described a plurality of magnetic memory cell structures of access,
Each of wherein said a plurality of magnetic memory cell structures comprises:
One magnetic is fixing laminated, as the part of a base layer structure of this magnetic memory cell structure;
One wears the tunnel insulation course, be positioned at this magnetic fixing laminated on; And
One magnetic freedom is laminated, and be positioned at this and wear on the tunnel insulation course, the free laminated ferromagnetic metal layer on ferromagnetic metal layer, the non-magnetic metal layer and that comprises of this magnetic wherein,
Wherein a magnetization vector of this time ferromagnetic metal layer is less than a magnetization vector of ferromagnetic metal layer on this, and this magnetic is fixed laminated action to this time ferromagnetic metal layer, greater than action to ferromagnetic metal layer on this, so that a bifurcation operating area is produced a magnetic field bias voltage, make the trend one magnetic field zero skew of biconditional operation zone.
23. as the magnetic storage device as described in the claim 22, wherein this magnetic field bias voltage dwindles a direct zone that is adjacent to this biconditional operation zone.
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