CN100580971C - 垂直纳米管半导体器件结构及其形成方法 - Google Patents
垂直纳米管半导体器件结构及其形成方法 Download PDFInfo
- Publication number
- CN100580971C CN100580971C CN200580003688A CN200580003688A CN100580971C CN 100580971 C CN100580971 C CN 100580971C CN 200580003688 A CN200580003688 A CN 200580003688A CN 200580003688 A CN200580003688 A CN 200580003688A CN 100580971 C CN100580971 C CN 100580971C
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- China
- Prior art keywords
- nanotube
- plate
- semiconducting nanotubes
- gate electrode
- tube
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having a potential-jump barrier or a surface barrier
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
- H10K10/491—Vertical transistors, e.g. vertical carbon nanotube field effect transistors [CNT-FETs]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/20—Carbon compounds, e.g. carbon nanotubes or fullerenes
- H10K85/221—Carbon nanotubes
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S977/00—Nanotechnology
- Y10S977/70—Nanostructure
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S977/00—Nanotechnology
- Y10S977/70—Nanostructure
- Y10S977/734—Fullerenes, i.e. graphene-based structures, such as nanohorns, nanococoons, nanoscrolls or fullerene-like structures, e.g. WS2 or MoS2 chalcogenide nanotubes, planar C3N4, etc.
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S977/00—Nanotechnology
- Y10S977/70—Nanostructure
- Y10S977/734—Fullerenes, i.e. graphene-based structures, such as nanohorns, nanococoons, nanoscrolls or fullerene-like structures, e.g. WS2 or MoS2 chalcogenide nanotubes, planar C3N4, etc.
- Y10S977/742—Carbon nanotubes, CNTs
Abstract
Description
Claims (20)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/767,065 US20050167655A1 (en) | 2004-01-29 | 2004-01-29 | Vertical nanotube semiconductor device structures and methods of forming the same |
US10/767,065 | 2004-01-29 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1914746A CN1914746A (zh) | 2007-02-14 |
CN100580971C true CN100580971C (zh) | 2010-01-13 |
Family
ID=34807634
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN200580003688A Active CN100580971C (zh) | 2004-01-29 | 2005-01-13 | 垂直纳米管半导体器件结构及其形成方法 |
Country Status (9)
Country | Link |
---|---|
US (2) | US20050167655A1 (zh) |
EP (1) | EP1708960A1 (zh) |
JP (2) | JP2007520072A (zh) |
KR (1) | KR20060127105A (zh) |
CN (1) | CN100580971C (zh) |
IL (1) | IL177125A0 (zh) |
RU (1) | RU2342315C2 (zh) |
TW (1) | TWI343123B (zh) |
WO (1) | WO2005076381A1 (zh) |
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US7374793B2 (en) | 2003-12-11 | 2008-05-20 | International Business Machines Corporation | Methods and structures for promoting stable synthesis of carbon nanotubes |
US7211844B2 (en) | 2004-01-29 | 2007-05-01 | International Business Machines Corporation | Vertical field effect transistors incorporating semiconducting nanotubes grown in a spacer-defined passage |
US7829883B2 (en) | 2004-02-12 | 2010-11-09 | International Business Machines Corporation | Vertical carbon nanotube field effect transistors and arrays |
US20050279274A1 (en) * | 2004-04-30 | 2005-12-22 | Chunming Niu | Systems and methods for nanowire growth and manufacturing |
US7109546B2 (en) | 2004-06-29 | 2006-09-19 | International Business Machines Corporation | Horizontal memory gain cells |
US7351448B1 (en) * | 2004-07-27 | 2008-04-01 | The United States Of America As Represented By The Secretary Of The Navy | Anti-reflective coating on patterned metals or metallic surfaces |
US7233071B2 (en) * | 2004-10-04 | 2007-06-19 | International Business Machines Corporation | Low-k dielectric layer based upon carbon nanostructures |
US7126207B2 (en) * | 2005-03-24 | 2006-10-24 | Intel Corporation | Capacitor with carbon nanotubes |
KR100645064B1 (ko) * | 2005-05-23 | 2006-11-10 | 삼성전자주식회사 | 금속 산화물 저항 기억소자 및 그 제조방법 |
US7230286B2 (en) * | 2005-05-23 | 2007-06-12 | International Business Machines Corporation | Vertical FET with nanowire channels and a silicided bottom contact |
WO2007022359A2 (en) * | 2005-08-16 | 2007-02-22 | The Regents Of The University Of California | Vertical integrated silicon nanowire field effect transistors and methods of fabrication |
US20070110639A1 (en) * | 2005-10-14 | 2007-05-17 | Pennsylvania State University | System and method for positioning and synthesizing of nanostructures |
US7268077B2 (en) * | 2005-12-02 | 2007-09-11 | Intel Corporation | Carbon nanotube reinforced metallic layer |
US7906803B2 (en) * | 2005-12-06 | 2011-03-15 | Canon Kabushiki Kaisha | Nano-wire capacitor and circuit device therewith |
WO2007092770A2 (en) * | 2006-02-02 | 2007-08-16 | William Marsh Rice University | Fabrication de dispositifs electriques par façonnage de nanotubes |
WO2007092835A2 (en) * | 2006-02-07 | 2007-08-16 | William Marsh Rice University | Production de reseaux verticaux de nanotubes de carbone a petit diametre et paroi simple |
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JP2009541198A (ja) * | 2006-06-30 | 2009-11-26 | ユニバーシティー オブ ウロンゴング | ナノ構造複合材 |
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-
2004
- 2004-01-29 US US10/767,065 patent/US20050167655A1/en not_active Abandoned
-
2005
- 2005-01-03 TW TW094100109A patent/TWI343123B/zh not_active IP Right Cessation
- 2005-01-13 RU RU2006130861/28A patent/RU2342315C2/ru not_active IP Right Cessation
- 2005-01-13 KR KR1020067015316A patent/KR20060127105A/ko not_active Application Discontinuation
- 2005-01-13 CN CN200580003688A patent/CN100580971C/zh active Active
- 2005-01-13 WO PCT/EP2005/050127 patent/WO2005076381A1/en active Application Filing
- 2005-01-13 EP EP05701510A patent/EP1708960A1/en not_active Withdrawn
- 2005-01-13 JP JP2006550156A patent/JP2007520072A/ja active Pending
-
2006
- 2006-07-27 IL IL177125A patent/IL177125A0/en unknown
-
2007
- 2007-10-29 US US11/926,661 patent/US7691720B2/en not_active Expired - Lifetime
-
2011
- 2011-08-08 JP JP2011172859A patent/JP5511746B2/ja not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
RU2006130861A (ru) | 2008-03-10 |
JP5511746B2 (ja) | 2014-06-04 |
RU2342315C2 (ru) | 2008-12-27 |
TWI343123B (en) | 2011-06-01 |
WO2005076381A1 (en) | 2005-08-18 |
US20050167655A1 (en) | 2005-08-04 |
JP2007520072A (ja) | 2007-07-19 |
CN1914746A (zh) | 2007-02-14 |
TW200527667A (en) | 2005-08-16 |
US7691720B2 (en) | 2010-04-06 |
US20080227264A1 (en) | 2008-09-18 |
JP2011258969A (ja) | 2011-12-22 |
KR20060127105A (ko) | 2006-12-11 |
IL177125A0 (en) | 2006-12-10 |
EP1708960A1 (en) | 2006-10-11 |
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