CN100578739C - Method for polishing chemical machinery - Google Patents
Method for polishing chemical machinery Download PDFInfo
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- CN100578739C CN100578739C CN200610081862A CN200610081862A CN100578739C CN 100578739 C CN100578739 C CN 100578739C CN 200610081862 A CN200610081862 A CN 200610081862A CN 200610081862 A CN200610081862 A CN 200610081862A CN 100578739 C CN100578739 C CN 100578739C
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Abstract
The invention is concerned with a chemical mechanical polishing method. Carry the first polishing process to wafer with the first hard pad and use the first grinding plasm, and carry the cushion process to wafer with the first soft pad and cleaner to amortize the pH valve to the first polishing process and remove some the first grinding plasm and cleaner by touching with the first soft pad. Carry the second polishing process to wafer with the second hard pad and use the second grinding plasm. The pH valve after the cushion process is between the pH valves of the first and second grinding plasm. It will avoid the strike between acid and alkali and the repeated pollution, and it will not form grains to scrap the surface of wafer.
Description
Technical field
The present invention relates to a kind of method of wafer planarization, relate in particular to a kind of method of chemico-mechanical polishing.
Background technology
In semiconductor process techniques, there is not the flat surfaces of high low head just can avoid the scattering that exposes, just can reach accurate design transfer (pattern transfer), so flattening surface is an important technology handling the high density photoetching.Wherein, chemical Mechanical Polishing Technique provides an important technology of present stage integrated circuit technology " comprehensive planarization " (global planarization).
Chemico-mechanical polishing mainly is to utilize the chemical assistant (reagent) that grinds in the slurry, on the front of wafer, produce chemical reaction, form an easy polishing layer, cooperate wafer again on polishing pad, by grinding the auxiliary mechanical polishing of abrasive grains (abrasive particles) in the slurry, the protrusion of easy polishing layer is partly polished, and above-mentioned repeatedly chemical reaction and mechanical polishing can form smooth surface.And the variable that influences CMP (Chemical Mechanical Polishing) process has: the rotary speed of the pressure that rubbing head is executed, the flatness of wafer, wafer and polishing pad, the material that grinds slurry and chemical analysis, temperature and the polishing pad of abrasive grains and abrasiveness or the like.
In general CMP (Chemical Mechanical Polishing) process; the glossing that can use twice above difference to grind slurry is usually finished; for instance; in the polishing of fleet plough groove isolation structure; can use silicates to grind slurry (silicatebase slurry) earlier; do the adjustment of appearance profile as SS25 (making) by Cabot Microelectronics; then re-use high selectivity and grind slurry (high selective slurry; HSS); for example cerium oxygen class is ground slurry (Ceria baseslurry); as Silect6000 (making) by Cabot Microelectronics, polish more accurately to the judgement of termination, use deionized water to remove residue on the wafer at last.And each grinds the composition that usually all has polishing action in the slurry, abrasive grains for example, and it can be aluminium oxide, silica or cerium oxide.
It should be noted that, the above-mentioned pH value (pH-value) of grinding slurry SS25 is 10～11, and the pH value of grinding slurry Silect6000 is 5～6, therefore working as SS25 remains on the wafer, directly enter next glossing, and mixed with Silect6000, can cause soda acid to impact (pH shock), and make cerium oxide and silica be combined into piece.And two kinds of differences grind the mixed of slurry, also can cause cross pollution (crosscontamination).In addition, the cerium oxide positively charged, silica is then electronegative under the environment of pH value 5, when the residual of SS25 with touch Silect6000 (pH=5), then may inhale mutually, and form the large-scale particle of block residual formation because of electric charge.
Granular size as shown in Figure 1 (transverse axis) and the frequency of occurrences (longitudinal axis) graph of a relation, contained abrasive grains among the curve 1 expression Silect6000; Curve 2 is the contained abrasive grains of SS25; Curve 3 represents that residual SS25 is to the ratio of Silect6000 at 1: 100 o'clock, the particle of abrasive grains and caking in the mixed liquor; Curve 4 is 1: 1000 o'clock for residual SS25 to the ratio of Silect6000 then, the particle of abrasive grains and caking in the mixed liquor.By A block among the figure as can be known, in case when having residual SS25 on wafer, when it and Silect6000 is mixed just large-scale particle can occur, and these large-scale particles can cause polished wafer the problem of scratch (scratch) to occur.
Summary of the invention
In view of this, the purpose of this invention is to provide a kind of method of chemico-mechanical polishing, to prevent that soda acid from impacting and the generation of cross pollution.
Another object of the present invention provides a kind of method of chemico-mechanical polishing, to avoid the polished wafer of scratch.
The present invention proposes a kind of method of chemico-mechanical polishing, comprises with first hard polishing pad wafer being carried out first glossing earlier, and uses first to grind slurry.Then, wafer is cushioned technology, cushioning the pH value of first glossing, and grind slurry and cleaning agent by being removed to first of small part with contacting of first soft polishing pad with first soft polishing pad and cleaning agent.Then, wafer is carried out second glossing, and use second to grind slurry, and the pH value after the buffering technology is ground between the pH value of slurry between the first pH value and second of grinding slurry with second hard polishing pad.
Described according to one embodiment of the invention, the material of the first above-mentioned soft polishing pad comprises Polytex (being made by Rohm and Haas).
Described according to one embodiment of the invention, in the step of buffering technology, the downforce of first soft polishing pad (downforce) for example is between 0.1 to 5psi (pound/square inch), and the process time for example is between 1 to 100 second.
Described according to one embodiment of the invention, after second glossing, also comprise with the second soft polishing pad clean wafers.
Described according to one embodiment of the invention, above-mentioned first grinds the composition that slurry comprises the tool polishing action, for example is aluminium oxide (alumina), silica (silicon dioxide) or cerium oxide (cerium oxide).
Described according to one embodiment of the invention, above-mentioned second grinds the composition that slurry comprises the tool polishing action, for example is aluminium oxide, silica or cerium oxide.
Described according to one embodiment of the invention, above-mentioned buffering technology uses pressuring method to inject this cleaning agent.
Described according to one embodiment of the invention, above-mentioned first grinds the pH value of slurry less than 7.Second grinds the pH value of slurry greater than 7.And cleaning agent can be deionized water (DI water), contain potassium hydroxide (KOH) or ammonia (NH
3) deionized water or water or other pH value greater than 7 chemical substance.
Described according to one embodiment of the invention, above-mentioned first grinds the pH value of slurry greater than 7.Second grinds the pH value of slurry less than 7.Cleaning agent can be deionized water, contain carbon dioxide (CO
2), deionized water or the water or the chemical substance of other pH value between 6 to 7 of citric acid (citricacid) or oxalic acid (oxalic acid).
Described according to one embodiment of the invention, the method for above-mentioned chemico-mechanical polishing is the CMP (Chemical Mechanical Polishing) process (STI CMP) that is used for fleet plough groove isolation structure.And when the method for chemico-mechanical polishing of the present invention is to be used for fleet plough groove isolation structure, then in the buffering technology therein, oxide removal amount (oxideremoval amount) is approximately less than 200 dusts or equal zero.
Described according to one embodiment of the invention, the method for above-mentioned chemico-mechanical polishing is copper CMP technology (Cu-CMP).
The present invention proposes a kind of method of chemico-mechanical polishing in addition, comprise prior to material layer is provided on the wafer, and material layer has first surface.Then, carry out first glossing, remove the second surface of part material layer with the exposed material layer, wherein first glossing uses first to grind slurry.Then, cushion technology, clean second surface, in order to cushioning the pH value of first glossing, and remove to grind and starch and cleaning agent to small part first with cleaning agent.Continue it, carry out second glossing, grind slurry with second and remove three surface of part material layer with the exposed material layer.PH value after buffering technology is ground between the pH value of slurry between the first pH value and second of grinding slurry.
Described according to another embodiment of the present invention, the process time of above-mentioned buffering technology for example is between 1 to 100 second.
Described according to another embodiment of the present invention, above-mentioned first grinds the composition that slurry comprises a tool polishing action, for example is aluminium oxide, silica or cerium oxide.
Described according to another embodiment of the present invention, above-mentioned second grinds the composition that slurry comprises a tool polishing action, for example is aluminium oxide, silica or cerium oxide.
Described according to another embodiment of the present invention, above-mentioned buffering technology uses pressuring method to inject cleaning agent.
Described according to another embodiment of the present invention, above-mentioned first grinds the pH value of slurry less than 7.Second grinds the pH value of slurry then greater than 7.And cleaning agent is deionized water, contains the deionized water of potassium hydroxide or ammonia or water or other pH value greater than 7 chemical substance.
Described according to another embodiment of the present invention, above-mentioned first grinds the pH value of slurry greater than 7.Second grinds the pH value of slurry then less than 7.And cleaning agent is deionized water, contains deionized water or the water or the chemical substance of other pH value between 6 to 7 of carbon dioxide, citric acid or oxalic acid.
Described according to another embodiment of the present invention, the method for above-mentioned chemico-mechanical polishing is the CMP (Chemical Mechanical Polishing) process of fleet plough groove isolation structure.And when the method for chemico-mechanical polishing of the present invention is to be used for fleet plough groove isolation structure, then in the buffering technology therein, the oxide removal amount is approximately less than 200 dusts or equal zero.
Described according to another embodiment of the present invention, the method for above-mentioned chemico-mechanical polishing is a copper CMP technology.
The present invention is between the step of two step glossings, carry out the buffer step of cleaning agent, clean the residue on the wafer of polishing back on the one hand, neutralization and clean previous step are retained in the slurry that grinds on the wafer on the one hand, so it is directly mixed to avoid two kinds of differences to grind slurry, soda acid taking place impact and cross pollution, so does not have residual particles pollution even scratch wafer surface on the wafer.
For above and other objects of the present invention, feature and advantage can be become apparent, following conjunction with figs. and preferred embodiment are to illustrate in greater detail the present invention.
Description of drawings
Fig. 1 is pure slurry or the mixed granular size in the slurry and the graph of a relation of occurrence frequency of grinding of grinding;
Fig. 2 A-1, Fig. 2 B-1 and Fig. 2 C-1 are the vertical views of chemical-mechanical polishing mathing device;
Fig. 2 A-2, Fig. 2 B-2 and Fig. 2 C-2 are respectively the structural profile schematic diagram of wafer in the polishing flow process among Fig. 2 A-1, Fig. 2 B-1 and Fig. 2 C-1.
The simple symbol explanation
1,2,3,4: curve
200: the chemical-mechanical polishing mathing device
202: mechanical arm
204: wafer is come in and gone out and is distinguished
206,210: polishing area
208: buffering area
212: rubbing head
220,260: hard polishing pad
230,270: grind slurry
232: pipe fitting
240: soft polishing pad
250: cleaning agent
300: wafer
302: substrate
304,310: material layer
312: first surface
314: second surface
316: the three surfaces
A: block
Embodiment
Fig. 2 A to Fig. 2 C is the chemico-mechanical polishing flow chart according to one embodiment of the invention illustrated, wherein Fig. 2 A-1, Fig. 2 B-1 and Fig. 2 C-1 are the vertical views of chemical-mechanical polishing mathing device, and Fig. 2 A-2, Fig. 2 B-2 and Fig. 2 C-2 are respectively the structural profile schematic diagram of wafer in the polishing flow process among Fig. 2 A-1, Fig. 2 B-1 and Fig. 2 C-1.
At first, please be simultaneously with reference to Fig. 2 A-1 and Fig. 2 A-2.The chemical-mechanical polishing mathing device 200 of present embodiment for example is to comprise four full wind-ups 202 and four technology blocks, and it is respectively wafer discrepancy district 204, polishing area 206, buffering area 208 and polishing area 210.In addition, the present invention also can be applicable to the chemical polishing machine of other type, and it is described to be not limited to this figure.And four end points of above-mentioned full wind-up 202 all have rubbing head 212, and the below of rubbing head 212 can hold a wafer 300.Having formed number tunic layer in the substrate 302 of this wafer 300, for example is the material layer 304 and material layer 310 of different materials, and wherein, material layer 310 need be flattened.Therefore, enter chemical-mechanical polishing mathing device 200 (this step does not illustrate) afterwards at wafer 300 by wafer discrepancy district 204, wafer 300 is attracted to rubbing head 212 belows, inserts polishing area 206 by full wind-up 202 and carries out glossing.
Please continue with reference to Fig. 2 A-1 and Fig. 2 A-2.Above-mentioned glossing for example is pressed in wafer 300 on the hard polishing pad 220 in the polishing area 206 with rubbing head 212, make the first surface 312 contact hard polishing pads 220 of material layer 310, carry by a pipe fitting 232 simultaneously and grind slurry 230, and it is uniformly distributed between hard polishing pad 220 and the wafer 300, then rubbing head 212 drives wafer 300 rotations, and hard polishing pad 220 then polishes wafer 300 with opposite direction rotation.Wherein, the material of hard polishing pad 220 for example is the polymeric material with similar flannelette flexibility, as be mixed with the polyester fiber of polyamine formic acid esters, the hardness of polyester fiber is obviously than polyamine formic acid esters height, and polyester fiber has hole, the polyamine formic acid esters does not have hole, therefore can adjust both ratios on demand.And grind slurry 230 for example is can fast polishing to remove material layer 310 and adjust the slurry that grinds of its appearance profile, and the pH value for example is greater than 7, and for example silicates grinds slurry, and as SS25, its pH value is approximately between 10 to 11.In addition, grind the compositions that slurry must have polishing action in 230, abrasive grains for example, it can be aluminium oxide, silica or cerium oxide.After glossing, part material layer 310 can be removed, and the second surface 314 of exposed material layer 310.
Continue it, please be simultaneously with reference to Fig. 2 B-1 and Fig. 2 B-2.Wafer 300 is admitted to buffering area 208 and cushions technology, with buffering wafer 300 surface pH value.And buffering technology for example is to clean with 240 pairs of wafers 300 of soft polishing pad, its method for example is to use pressuring method to inject cleaning agent 250 on soft polishing pad 240, and its downforce for example is between 0.1 to 5psi, and rotation soft polishing pad 240 evenly distributes cleaning agent 250.The process time of buffering technology for example is between 1 to 100 second.The flexibility of the material of soft polishing pad 240 needs better than hard polishing pad 220, for example is the Polytex by Rohm and Haas manufacturing.For instance, the density of the material of soft polishing pad 240 for example is to be lower than 0.8g/cm
3(gram/cubic centimetre); Or its hardness for example is to be lower than 50SHORE D (shore hardness D), as polyethylene.In addition, the material of soft polishing pad 240 also can for example be the PolitexEmbossed Pad that is made by Rodel company.
Subsequently, the second surface 314 contact soft polishing pads 240 of material layer 310 make the cleaning agent 250 on the soft polishing pad 240 can clean second surface 314 on the wafer 300.In addition, grind slurry 230 and cleaning agent 250 by being removed to small part with contacting of soft polishing pad 240.What deserves to be mentioned is that above-mentioned cleaning agent 250 for example is deionized water, contain deionized water or the water or the chemical substance of other pH value between 6 to 7 of carbon dioxide, citric acid or oxalic acid.The function of cleaning agent 250 not only will be removed the residual particles that one glossing left over, and removes fully and grind slurry 230 avoiding forming cross pollution with the slurry that grinds of next glossing, and then produces large-scale particle (as described in existing).In addition, cleaning agent is at last one glossing (as Fig. 2 A) and next step glossing, and be designed in the energy and the difference of the technological parameter of twice glossing, as the pH value of regulating the wafer surface raffinate, to grind slurry pH value difference different excessive in order to avoid twice glossing is employed, causes soda acid to impact.
Then, please be simultaneously with reference to Fig. 2 C-1 and Fig. 2 C-2.Wafer 300 is admitted to polishing area 210, carries out another glossing.And the method for this road glossing for example is identical with last glossing together (as Fig. 2 A), so do not give unnecessary details in this.Both differences are in the employed slurry 270 that grinds of the glossing of this figure can have high selectivity, can be extremely sensitive to the polishing final position, and its pH value for example is less than 7; Be preferably high selectivity and grind slurry, for example cerium oxygen class is ground slurry, and as Silect6000, its pH value is approximately between 5 to 6.Can also comprise abrasive grains and grind slurry 270, for example be aluminium oxide, silica or cerium oxide.Subsequently, part material layer 310 is removed, with the 3rd surface 316 of exposed material layer 310.Hard polishing pad 260 can be identical with the material of hard polishing pad 220, for example is the polymeric material with similar flannelette flexibility, as is mixed with the polyester fiber of polyamine formic acid esters, can also adjust both ratios on demand.
In addition, after the glossing of Fig. 2 C, can also be again with another soft polishing pad (not illustrating) clean wafers 300.
Above-mentioned chemico-mechanical polishing flow process can also be according to the polished material on the wafer, and the material and the use order of slurry are ground in conversion.For instance, in another embodiment, when material layer 310 is metal levels, for example tungsten, copper or aluminium, grinding 230 in slurry can be oxidant, for example hydrogen peroxide or iodates, with the metal level oxidation so that remove.
In another embodiment, the pH value of grinding slurry 230 that the glossing of Fig. 2 A-1 uses for example is less than 7, and the cleaning agent 250 that uses in the buffering technology of Fig. 2 B-1 can be removed any particle residual on the wafer and grind slurry 230.Then, carry out the glossing of Fig. 2 C-1, the pH value that slurry 270 is ground in its use then for example is greater than 7.Therefore, cleaning agent 250 is except the function of removing residue, also must cooperate the employed slurry 230,270 that grinds of glossing before and after it to do change, for example be deionized water, contain the deionized water of potassium hydroxide or ammonia or water or other pH value greater than 7 chemical substance.
Importantly, the pH value after the buffering technology can be between grinding slurry 230 and grinding between the pH value of slurry 270, to reach the effect of the pH value that cushions twice glossing in front and back.Certainly, description that above-mentioned buffering technology is not limited to mention among the embodiment and order, buffering technology for example is after carrying out certain one glossing, or can carry out before certain one glossing carrying out.In addition, the number of times of above-mentioned chemico-mechanical polishing can also have different designs according to the polished material layer 310 on the wafer 300.
The method of chemico-mechanical polishing of the present invention can be the CMP (Chemical Mechanical Polishing) process of fleet plough groove isolation structure; and the method for working as chemico-mechanical polishing of the present invention is a fleet plough groove isolation structure; then in the buffering technology therein, the oxide removal amount for example is less than 200 dusts or even equals zero.In another embodiment, the method for chemico-mechanical polishing of the present invention can also be a copper CMP technology.
In sum, the method of chemico-mechanical polishing of the present invention, between two step glossings, carry out buffer step, clean the residue on the wafer of polishing back on the one hand, neutralization and clean previous step are retained in the slurry that grinds on the wafer on the one hand, and it is directly mixed to avoid two kinds of differences to grind slurry, soda acid takes place impact and cross pollution, therefore do not have residual particles on the wafer, so can not pollute even the scratch wafer surface.
Though the present invention discloses as above with preferred embodiment; yet it is not in order to limit the present invention; those skilled in the art under the premise without departing from the spirit and scope of the present invention; can do a little change and retouching, thus protection scope of the present invention should with claims the person of being defined be as the criterion.
Claims (42)
1. the method for a chemico-mechanical polishing comprises:
With first hard polishing pad wafer is carried out first glossing, this first glossing uses first to grind slurry;
With first soft polishing pad and cleaning agent this wafer is cushioned technology, cushioning the pH value of this first glossing, and first grind slurry and this cleaning agent by this that is removed to small part with contacting of this first soft polishing pad; And
With second hard polishing pad this wafer is carried out second glossing, this second glossing uses second to grind slurry, and the pH value after this buffering technology first is ground the pH value of slurry and this second and ground between the pH value of slurry between this.
2. the method for chemico-mechanical polishing as claimed in claim 1, wherein the material of this first soft polishing pad comprises Polytex.
3. the method for chemico-mechanical polishing as claimed in claim 1 wherein cushions in the step of technology in this, and the downforce of this first soft polishing pad is between 0.1 to 5psi, and the process time is between 1 to 100 second.
4. the method for chemico-mechanical polishing as claimed in claim 1 after this second glossing, also comprises with second soft polishing pad and cleans this wafer.
5. the method for chemico-mechanical polishing as claimed in claim 1, wherein this first grinds the composition that slurry comprises the tool polishing action.
6. the method for chemico-mechanical polishing as claimed in claim 5, wherein the composition of this tool polishing action comprises aluminium oxide, silica or cerium oxide.
7. the method for chemico-mechanical polishing as claimed in claim 1, wherein this second grinds the composition that slurry comprises the tool polishing action.
8. the method for chemico-mechanical polishing as claimed in claim 7, wherein the composition of this tool polishing action comprises aluminium oxide, silica or cerium oxide.
9. the method for chemico-mechanical polishing as claimed in claim 1, wherein this buffering technology uses pressuring method to inject this cleaning agent.
10. the method for chemico-mechanical polishing as claimed in claim 1, wherein this first grinds the pH value of slurry less than 7.
11. the method for chemico-mechanical polishing as claimed in claim 10, wherein this second grinds the pH value of slurry greater than 7.
12. the method for chemico-mechanical polishing as claimed in claim 10, wherein this cleaning agent is a deionized water.
13. the method for chemico-mechanical polishing as claimed in claim 10, wherein this cleaning agent is the pH value greater than 7 chemical substance.
14. the method for chemico-mechanical polishing as claimed in claim 10, wherein this cleaning agent is deionized water or the water that contains potassium hydroxide or ammonia.
15. the method for chemico-mechanical polishing as claimed in claim 1, wherein this first grinds the pH value of slurry greater than 7.
16. the method for chemico-mechanical polishing as claimed in claim 15, wherein this second grinds the pH value of slurry less than 7.
17. the method for chemico-mechanical polishing as claimed in claim 15, wherein this cleaning agent is a deionized water.
18. the method for chemico-mechanical polishing as claimed in claim 15, wherein this cleaning agent comprises deionized water or the water that contains carbon dioxide, citric acid or oxalic acid.
19. the method for chemico-mechanical polishing as claimed in claim 15, wherein this cleaning agent is the chemical substance of pH value between 6 to 7.
20. the method for chemico-mechanical polishing as claimed in claim 1 is the CMP (Chemical Mechanical Polishing) process of fleet plough groove isolation structure.
21. the method for chemico-mechanical polishing as claimed in claim 20, in this buffering technology, the oxide removal amount is less than 200 dusts or equal zero.
22. the method for chemico-mechanical polishing as claimed in claim 1 is a copper CMP technology.
23. the method for a chemico-mechanical polishing comprises:
Material layer is provided on wafer, and this material layer has first surface;
Carry out first glossing, remove this material layer of part to expose the second surface of this material layer, wherein this first glossing uses first to grind slurry;
Cushion technology, clean this second surface, in order to cushioning the pH value of this first glossing, and remove that this first grinds slurry and this cleaning agent to small part with cleaning agent; And
Carry out second glossing, grind slurry with second and remove this material layer of part exposing the 3rd surface of this material layer, and first grind the pH value of slurry and this second and grind between the pH value of slurry between this in the pH value after this buffering technology.
24. the method for chemico-mechanical polishing as claimed in claim 23 wherein should cushion the process time of technology between 1 to 100 second.
25. the method for chemico-mechanical polishing as claimed in claim 23, wherein this first grinds slurry and comprises the composition of tool polishing action.
26. the method for chemico-mechanical polishing as claimed in claim 25, wherein the composition of this tool polishing action comprises aluminium oxide, silica or cerium oxide.
27. the method for chemico-mechanical polishing as claimed in claim 23, wherein this second grinds slurry and comprises the composition of tool polishing action.
28. the method for chemico-mechanical polishing as claimed in claim 27, wherein the composition of this tool polishing action comprises aluminium oxide, silica or cerium oxide.
29. the method for chemico-mechanical polishing as claimed in claim 23, wherein this buffering technology uses pressuring method to inject this cleaning agent.
30. the method for chemico-mechanical polishing as claimed in claim 23, wherein this first grinds the pH value of slurry less than 7.
31. the method for chemico-mechanical polishing as claimed in claim 30, wherein this second grinds the pH value of slurry greater than 7.
32. the method for chemico-mechanical polishing as claimed in claim 30, wherein this cleaning agent is a deionized water.
33. the method for chemico-mechanical polishing as claimed in claim 30, wherein this cleaning agent is the pH value greater than 7 chemical substance.
34. the method for chemico-mechanical polishing as claimed in claim 30, wherein this cleaning agent comprises deionized water or the water that contains potassium hydroxide or ammonia.
35. the method for chemico-mechanical polishing as claimed in claim 23, wherein this first grinds the pH value of slurry greater than 7.
36. the method for chemico-mechanical polishing as claimed in claim 35, wherein this second grinds the pH value of slurry less than 7.
37. the method for chemico-mechanical polishing as claimed in claim 35, wherein this cleaning agent is a deionized water.
38. the method for chemico-mechanical polishing as claimed in claim 35, wherein this cleaning agent comprises deionized water or the water that contains carbon dioxide, citric acid or oxalic acid.
39. the method for chemico-mechanical polishing as claimed in claim 35, wherein this cleaning agent is the chemical substance of pH value between 6 to 7.
40. the method for chemico-mechanical polishing as claimed in claim 23 is the CMP (Chemical Mechanical Polishing) process of fleet plough groove isolation structure.
41. the method for chemico-mechanical polishing as claimed in claim 40, in this buffering technology, the oxide removal amount is less than 200 dusts or equal zero.
42. the method for chemico-mechanical polishing as claimed in claim 23 is a copper CMP technology.
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| CN200610081862A CN100578739C (en) | 2006-05-17 | 2006-05-17 | Method for polishing chemical machinery |
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Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN102463522B (en) * | 2010-11-18 | 2014-09-24 | 中芯国际集成电路制造(上海)有限公司 | Chemical mechanical polishing method of aluminum |
| CN102343562A (en) * | 2011-08-14 | 2012-02-08 | 上海合晶硅材料有限公司 | Method for prolonging service life of polishing cloth pad |
| CN103035504B (en) * | 2011-10-09 | 2016-07-06 | 中芯国际集成电路制造(北京)有限公司 | Cmp method and chemical-mechanical polisher |
| CN102922400A (en) * | 2012-11-09 | 2013-02-13 | 昆山市大金机械设备厂 | Buffing device |
| CN105619239A (en) * | 2016-02-26 | 2016-06-01 | 上海华力微电子有限公司 | Scratching-preventing chemical mechanical grinding device and chemical mechanical grinding method thereof |
| CN106891229A (en) * | 2017-04-02 | 2017-06-27 | 长葛市老城昌宝建筑机械配件厂 | A kind of polishing device of stainless-steel pipe |
| CN109590896A (en) * | 2019-01-11 | 2019-04-09 | 北京半导体专用设备研究所（中国电子科技集团公司第四十五研究所） | Chemical-mechanical polisher support construction and chemical-mechanical polisher |
| CN110690114A (en) * | 2019-10-11 | 2020-01-14 | 武汉新芯集成电路制造有限公司 | CMP polishing method |
| CN111805413A (en) * | 2020-07-23 | 2020-10-23 | 中国科学院微电子研究所 | Chemical mechanical polishing method |
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