CN100576087C - The manufacture method of photo-etching machine illumination homogeneity compensator - Google Patents
The manufacture method of photo-etching machine illumination homogeneity compensator Download PDFInfo
- Publication number
- CN100576087C CN100576087C CN200710041244A CN200710041244A CN100576087C CN 100576087 C CN100576087 C CN 100576087C CN 200710041244 A CN200710041244 A CN 200710041244A CN 200710041244 A CN200710041244 A CN 200710041244A CN 100576087 C CN100576087 C CN 100576087C
- Authority
- CN
- China
- Prior art keywords
- idea
- compensating plate
- photo
- manufacture method
- etching machine
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Abstract
The invention discloses a kind of manufacture method of photo-etching machine illumination homogeneity compensator, may further comprise the steps: compensating plate is divided into latticed zone according to compensation space resolution; Determine transmissivity compensation rate and idea distribution density thereof that each little lattice needs; Determine the equivalent cross-section area of idea; On the compensating plate design layout, place new idea at random according to the non-intersect folded principle of the equivalent cross-section of idea; When the idea of same size has not had local the placement by mentioned above principle, but when compensation rate is also not enough, the idea minification is placed again, and variation is counted transmissivity, repeat said process up to finishing the compensating plate design layout; With the compensating plate design layout input mask plate making apparatus of making, the compensating plate substrate is put into making apparatus, on substrate, generate figure and make compensating plate.Close contact between the opaque idea that the compensating plate of this method manufacturing can be avoided occurring distributing on the transparency carrier also overlaps, and improves the compensation effect and the precision of compensating plate.
Description
Technical field
The present invention relates to the semiconductor lithography exposure sources, particularly a kind of manufacture method of photo-etching machine illumination homogeneity compensator.
Background technology
The compensation of photoetching machine lens illumination uniformity at present solves by the compensating plate of making the transmissivity modulation usually, and the transparency of compensating plate realizes by the opaque idea of stochastic distribution different densities on transparency carrier.Usually when the litho machine term of life reach 5 years or more than, the number percent of the relative average transmittance of transmissivity center edge difference that photoetching machine lens need compensate is about 20%, for compensating this bigger transmissivity difference, need to increase the density of opaque idea on the compensating plate, but for various reasons, size and position foozle such as idea, when the leveled circular dot density reaches certain degree, begin between the opaque idea on the compensating plate on the edge, to contact, because the accuracy limitations of photoresist or optical system, the local area that overlaps can increase gradually, influences the precision of compensating plate.
Summary of the invention
The technical problem to be solved in the present invention provides a kind of manufacture method of photo-etching machine illumination homogeneity compensator, and the close contact between the opaque idea that can avoid occurring distributing on the transparency carrier also overlaps, thereby improves the compensation effect and the precision of compensating plate.
For solving the problems of the technologies described above, the technical solution used in the present invention may further comprise the steps: step 1, compensating plate is divided into latticed zone according to compensation space resolution; Step 2, determine that each grid needs for the inhomogeneity transmissivity compensation rate of compensating illumination; Step 3, determine the idea distribution density of each grid according to the compensation rate of each grid needs; Step 4, determine the equivalent cross-section area of idea; Step 5, the equivalent cross-section according to the idea that newly adds on the compensating plate design layout are placed new idea at random with the non-intersect folded principle of equivalent cross-section of all ideas of having placed; Step 6, there be not local the placement by mentioned above principle when the idea of same size, when but compensation rate does not also reach the maximum compensation rate that needs, with idea minification according to a certain percentage, five method is placed set by step again, and variation is counted transmissivity, if can't reach the maximum compensation rate that needs, dwindle certain proportion again and place, up to finishing the compensating plate design layout; Step 7, with the compensating plate design layout made input mask plate making apparatus, the compensating plate substrate is put into making apparatus, on substrate, generate figure, make compensating plate.
The scale error and the site error of the idea that will produce owing to craft precision in advance when the manufacture method of photo-etching machine illumination homogeneity compensator of the present invention generates figure on compensating plate are taken into account, with the big or small unified equivalent cross-section that is of itself and itself, when generating, figure make the equivalent cross-section between idea and the idea not overlapping each other, and by the service precision height, the mask plate manufacturing process that process cost is low realizes the making of compensating plate, thereby the close contact between the opaque idea that can avoid occurring distributing on the transparency carrier also overlaps, and improves the compensation effect and the precision of compensating plate.
Description of drawings
Fig. 1 is the equivalent cross-section synoptic diagram;
Fig. 2 is an idea placement location synoptic diagram;
Fig. 3 dwindles the idea diameter to place synoptic diagram.
Embodiment
Below in conjunction with the drawings and specific embodiments the present invention is described in further detail.
The manufacture method of photo-etching machine illumination homogeneity compensator of the present invention adopts a kind of manufacturing process of selecting Distribution Algorithm and mask plate of uniqueness to cook compensating plate, avoiding occurring close contact between points, thereby prevents the reduction of precision.Idea is circular, the scale error and the site error of the idea that will produce owing to craft precision in advance when the inventive method generates figure on compensating plate are taken into account, with the big or small unified equivalent cross-section that is of itself and itself, the equivalent cross-section area derives from the size of idea and the making size dimension sum of errors placement location error of idea, as shown in Figure 1: the size of equivalent cross-section=idea size+(site error (3 σ)
2+ scale error (3 σ)
2)
0.5, the original size that the size of equivalent cross-section equals idea adds that the root of site error and scale error is all square; When generating, figure make the equivalent cross-section between idea and the idea not overlapping each other; More increase by service precision, (the live width precision is within 0.2 micron, and positional precision is within 0.2 micron) mask plate manufacturing process that process cost is lower realizes the making of more high-precision transmissivity compensating plate again.Specifically may further comprise the steps:
(1) compensating plate is divided into latticed zone according to compensation space resolution, takes advantage of 10 such as 10;
(2) determine that each little lattice needs for the inhomogeneity transmissivity compensation rate of compensating illumination, transmissivity is defined as in each grid in the grid total area not the area that occupied by the idea ratio divided by the grid total area;
(3) determine the idea distribution density of each grid according to the compensation rate of each grid needs;
(4) determine the equivalent cross-section area of idea;
(5) equivalent cross-section according to the idea that newly adds is placed new idea at random with the non-intersect folded principle of equivalent cross-section of all ideas of having placed on the compensating plate design layout;
(6) there be not local the placement if run into the idea of same size, when but compensation rate does not also reach the maximum compensation rate that needs, the idea size is dwindled certain proportion, as 10%, the method of (5) is placed again set by step, if and variation counted transmissivity. also not all right, dwindle certain proportion again and place, up to finishing the compensating plate design layout;
(7) with the domain input mask plate making apparatus of making, substrate is put into making apparatus, on compensating plate, generate figure.As plated film, gluing, exposure is developed, and etching;
(8) finish.
The manufacture method of photo-etching machine illumination homogeneity compensator of the present invention, it is equivalent cross-sectional area that scale error that when figure generates idea is produced owing to craft precision and site error are unified with the big or small addition of idea itself, and when distributing, idea makes that by certain algorithm the equivalent cross-section between idea and the idea is not overlapping each other, as shown in Figure 2, can be that the position of each idea is when generating in the idea generating algorithm, can only be selected in its equivalent cross-section with the not folded mutually place of the equivalent cross-section of the idea that has generated, and compensation rate is as required selected the position coordinates near the above-mentioned idea that has generated, when the compensation rate needs are very big, the more idea owing to need arrange, need to lean on closerly between idea and the idea, can hold many more ideas; The position coordinates of idea generates and is stochastic distribution, and with computing machine the compensating plate idea of given transmittance is distributed and to do archives, the slice, thin piece idea of newly doing distributes different as far as possible with the slice, thin piece of doing in the past, make the idea of each sheet compensating plate distribute different, idea distributes and is not both for when stacking up use for two, after blocking region overlapping, do not bring into play two effect.The size of idea can be unique, also can be under certain situation, big the time, as shown in Figure 3, need go into a period of the day from 11 p.m. to 1 a.m as compensation rate at less spatial interpolation, and dwindle the diameter of some ideas; The diameter of idea need be bigger significantly than wavelength, should be more than 1 micron, and to avoid causing transmissivity precision misalignment because of diffraction.
The manufacture method range of application of silicon exposure sources illumination homogeneity compensator of the present invention comprises various 248 and 193 nano-photoetching equipment.
Use the inventive method that the precision of compensating plate is kept under the situation of large compensation amount.
Claims (5)
1, a kind of manufacture method of photo-etching machine illumination homogeneity compensator is characterized in that, may further comprise the steps:
Step 1, compensating plate is divided into latticed zone according to compensation space resolution;
Step 2, determine that each grid needs for the inhomogeneity transmissivity compensation rate of compensating illumination;
Step 3, determine the idea distribution density of each grid according to the compensation rate of each grid needs;
Step 4, determine all sides of root that original size that the equivalent cross-section area of idea, the equivalent cross-section area of idea equal idea adds site error and scale error;
Step 5, the equivalent cross-section according to the idea that newly adds on the compensating plate design layout are placed new idea at random with the non-intersect folded principle of equivalent cross-section of all ideas of having placed;
Step 6, there be not local the placement by mentioned above principle when the idea of same size, when but compensation rate does not also reach the maximum compensation rate that needs, with idea minification according to a certain percentage, five method is placed set by step again, and variation is counted transmissivity, if can't reach the maximum compensation rate that needs, dwindle certain proportion again and place, up to finishing the compensating plate design layout;
Step 7, with the compensating plate design layout made input mask plate making apparatus, the compensating plate substrate is put into making apparatus, on substrate, generate figure, make compensating plate.
2, the manufacture method of photo-etching machine illumination homogeneity compensator according to claim 1 is characterized in that, the certain proportion that the idea size is dwindled is 10%.
3, the manufacture method of photo-etching machine illumination homogeneity compensator according to claim 1 is characterized in that, the diameter of idea is more than or equal to one micron.
4, the manufacture method of photo-etching machine illumination homogeneity compensator according to claim 1, it is characterized in that, with computing machine archives are done in the compensating plate idea distribution of given transmittance, the slice, thin piece idea of newly doing distributes different with the slice, thin piece of doing in the past, is different thereby make the idea distribution of each sheet compensating plate.
5, the manufacture method of photo-etching machine illumination homogeneity compensator according to claim 1 is characterized in that, step 6 uses the live width precision within 0.2 micron, and the mask plate manufacturing process of positional precision within 0.2 micron made compensating plate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN200710041244A CN100576087C (en) | 2007-05-25 | 2007-05-25 | The manufacture method of photo-etching machine illumination homogeneity compensator |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN200710041244A CN100576087C (en) | 2007-05-25 | 2007-05-25 | The manufacture method of photo-etching machine illumination homogeneity compensator |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101311833A CN101311833A (en) | 2008-11-26 |
| CN100576087C true CN100576087C (en) | 2009-12-30 |
Family
ID=40100517
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN200710041244A Active CN100576087C (en) | 2007-05-25 | 2007-05-25 | The manufacture method of photo-etching machine illumination homogeneity compensator |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN100576087C (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107290935B (en) | 2016-03-31 | 2019-01-29 | 上海微电子装备（集团）股份有限公司 | A kind of intensity modulation method |
| CN109991815B (en) * | 2017-12-29 | 2020-10-16 | 上海微电子装备（集团）股份有限公司 | Flood exposure compensation plate, flood exposure device and photoetching device |
-
2007
- 2007-05-25 CN CN200710041244A patent/CN100576087C/en active Active
Non-Patent Citations (2)
| Title |
|---|
| 光刻照明系统匀光技术研究. 剡蛟朋.电子工业专用设备 第3期 第23卷. 1994 |
| 光刻照明系统匀光技术研究. 剡蛟朋.电子工业专用设备 第23卷第3期. 1994 * |
Also Published As
| Publication number | Publication date |
|---|---|
| CN101311833A (en) | 2008-11-26 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US9268214B2 (en) | Method for forming circular patterns on a surface | |
| US8017288B2 (en) | Method for fracturing circular patterns and for manufacturing a semiconductor device | |
| CN102650819B (en) | Photo mask and positioning method of photo mask | |
| JP5787473B2 (en) | Method for manufacturing a semiconductor device on a substrate, method for fragmentation or mask data preparation for charged particle beam lithography, method and system for forming a plurality of circular patterns on a surface, and charged particle beam System for fragmentation or mask data preparation for use in lithography | |
| US7302673B2 (en) | Method and system for performing shapes correction of a multi-cell reticle photomask design | |
| CN103365110A (en) | Extreme ultraviolet lithography process and mask | |
| JP2005513770A (en) | Method and apparatus for forming a pattern on a workpiece | |
| US20200350306A1 (en) | Layout modification method for exposure manufacturing process | |
| CN106462086A (en) | Etch variation tolerant optimization | |
| CN104423140B (en) | The manufacturing method of photomask, the manufacturing method of display device and drawing apparatus | |
| CN107390477A (en) | Illuminator, exposure device and manufacture, image formation, illumination and exposure method | |
| CN101900938A (en) | Be used for providing the equipment and the method for resist alignment mark at double patterning lithographic process | |
| CN101539720A (en) | Photomask, system for manufacturing semiconductor device, and method of manufacturing semiconductor device | |
| CN103246153A (en) | Territory map layer design method of semiconductor chip and mask plate thereof | |
| CN106575604B (en) | Digital gray tone lithography for 3D patterning | |
| CN100576087C (en) | The manufacture method of photo-etching machine illumination homogeneity compensator | |
| CN110750038A (en) | Mask plate, standard plate and alignment pattern error compensation method | |
| CN109656093B (en) | Method for designing layout of photomask and method for manufacturing photomask | |
| CN103645601A (en) | Mask | |
| US20110020736A1 (en) | Method of producing holographic images of ic topologies | |
| CN110531590A (en) | A kind of direct-write type lithography machine joining method | |
| Wiaux et al. | Stitching enablement for anamorphic imaging: a~ 1μm exclusion band and its implications | |
| JP2009295919A (en) | Method for manufacturing semiconductor device | |
| US20220035982A1 (en) | Circuit layouts and related methods | |
| CN101241301A (en) | Photo mask pattern correction method |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| ASS | Succession or assignment of patent right |
Owner name: SHANGHAI HUAHONG GRACE SEMICONDUCTOR MANUFACTURING Free format text: FORMER OWNER: HUAHONG NEC ELECTRONICS CO LTD, SHANGHAI Effective date: 20131216 |
|
| C41 | Transfer of patent application or patent right or utility model | ||
| COR | Change of bibliographic data |
Free format text: CORRECT: ADDRESS; FROM: 201206 PUDONG NEW AREA, SHANGHAI TO: 201203 PUDONG NEW AREA, SHANGHAI |
|
| TR01 | Transfer of patent right |
Effective date of registration: 20131216 Address after: 201203 Shanghai city Zuchongzhi road Pudong New Area Zhangjiang hi tech Park No. 1399 Patentee after: Shanghai Huahong Grace Semiconductor Manufacturing Corporation Address before: 201206 Jinqiao Road, Pudong New Area Jinqiao Export Processing Zone, Shanghai, 1188 Patentee before: Shanghai Huahong NEC Electronics Co., Ltd. |