CN100573060C - A kind of quick response broadband optical detector - Google Patents
A kind of quick response broadband optical detector Download PDFInfo
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- CN100573060C CN100573060C CNB2005100718111A CN200510071811A CN100573060C CN 100573060 C CN100573060 C CN 100573060C CN B2005100718111 A CNB2005100718111 A CN B2005100718111A CN 200510071811 A CN200510071811 A CN 200510071811A CN 100573060 C CN100573060 C CN 100573060C
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Abstract
The present invention relates to a kind of quick response broadband optical detector, comprising: p type or n type silicon chip are substrate; The light responsive material layer of corresponding thereon growth one deck n type or p type is made chip, and described photoresponsive layer is the strontium titanate doping film that is grown on the silicon chip substrate, and this strontium titanate doping light responsive material layer thickness is 0.5nm-5 μ m; First electrode is arranged on the light responsive material layer, and second electrode is arranged on the silicon chip face, and an end of every contact conductor is connected with two electrodes respectively, and the other end of contact conductor is a signal output part; The two ends of resistance are connected with the output terminal of contact conductor respectively.This detector is the photogenic voltage type, directly produces voltage signal after rayed, without any need for auxiliary power supply and electronic circuit.Its response wave band can respond the laser pulse of femtosecond pulsewidth from the ultraviolet to the far infrared, laser pulse produces the forward position of potential pulse less than 1ns, and half width is less than 2ns, and the pulse full duration only is several ns.
Description
Technical field
The present invention relates to a kind of laser detector, particularly a kind of fast response broad band that utilizes strontium titanate doping and Si heterojunction material to make swashs detector.
Background technology
For the detection of laser energy, power, pulsewidth and waveform, not only extremely important to Laser Devices and fundamental research, and also have purposes very widely at aspects such as industry, military affairs and national defence.People have been developed various types of laser detectors such as thermoelectricity, photoelectricity, pyroelectricity, and as pyroelectric detector, though responding range is wide, the response time is slow, mostly is Millisecond.So people are still exploring wide spectrum, fast-response, highly sensitive new pattern laser detector always.
Strontium titanates (SrTiO
3) be typical perovskite structure oxide, not only Stability Analysis of Structures, and fusing point higher (degree more than 2000).Adopt the method for mixing, can obtain the doping SrTiO of different qualities
3Material, the applicant has applied for mixing doped strontium titanate material patents such as In, Mn, Sb (as China Patent No.: ZL99123795.1; ZL00100057.8; ZL99108056.4).The applicant has applied for that also strontium titanate transistor and semiconductor and strontium titanates p-n junction patent are (as China Patent No.: ZL00100366.6; But these all are the patents based on electrology characteristic ZL01104066.1).
Summary of the invention
The objective of the invention is to utilize strontium titanate doping and Si heterojunction material, a kind of voltage signal that directly produces after rayed is provided, without any need for auxiliary additional power source and electronic circuit, wide spectrum, fast-response, highly sensitive laser detector, energy, power and waveform that can exploring laser light, its response wave band from ultraviolet to infrared, but the laser pulse of response nano pulsewidth, the width that produces the photovoltage pulse can be less than 2ns.
The object of the present invention is achieved like this:
A kind of quick response broadband optical detector provided by the invention, p type or n type silicon chip are substrate 1; At described p type or n type silicon chip is that the strontium titanate doping thin layer of corresponding growth one deck n type or p type is made chip on the substrate 1; It is characterized in that: also comprise a resistance 5, first electrode 3, second electrode 4 and two lead-in wires 6; Described strontium titanate doping thin layer is a light responsive material layer 2, and these light responsive material layer 2 thickness are 0.5nm-5 μ m; First electrode 3 is arranged on the light responsive material layer 2, and second electrode 4 is arranged on 1 of the substrate, and an end of two contact conductors 6 is connected with second electrode 4 with first electrode 3 respectively, and the other end of contact conductor 6 is signal output parts; The two ends of resistance 5 are connected with the output terminal of two contact conductors 6 respectively; Described quick response broadband optical detector is a photogenic voltage type photodetector;
Described strontium titanate doping thin layer is Sr
1-xR
xTiO
3Or SrM
yTi
1-yO
3Wherein R comprises: La, Dy, Y, Sm or Gd; Wherein M comprises: Nb, Sb, Ta, In, Mn, W, Mg or Fe; Its x value is 0.005～0.5, and the y value is 0.005～0.5.
In above-mentioned technical scheme, also be included in epitaxial growth one SrO or BaO cushion on the silicon substrate 1, epitaxial growth one deck light responsive material layer 2 on epitaxially grown SrO and BaO cushion again, described SrO and BaO buffer layer thickness are 0.4nm～50nm.
In above-mentioned technical scheme, also be included in epitaxial growth one insulation course 7 on the silicon chip 1, described light responsive material layer 2 epitaxial regrowth are on insulation course 7; Perhaps insulation course 7 epitaxial growths are on SrO on the silicon substrate or BaO cushion, and the thickness of described insulation course 7 is 1nm～500nm.Wherein insulation course 7 comprises: lanthanum aluminate (LaAlO
3), strontium titanates (SrTiO
3), barium titanate (BaTiO
3), zirconia (ZrO
2), lanthanum manganate (LaMnO
3) or magnesium oxide (MgO).
In above-mentioned technical scheme, described strontium titanate doping thin layer is Sr
1-xR
xTiO
3Or SrM
yTi
1-yO
3, the thickness of strontium titanate doping film 2 is 0.8nm～5 μ m; Wherein R comprises: La, Dy, Y, Sm or Gd; Wherein M comprises: Nb, Sb, Ta, In, Mn, W, Mg or Fe, and its x value is 0.005～0.5, the y value is 0.005～0.5.
In above-mentioned technical scheme, also comprise a metal shell, its chip is installed in the metal shell.
In above-mentioned technical scheme, the resistance of described resistance 5 is 0.01 Ω～1M Ω; Resistance 5 significant feature are in order to improve response speed, because the structure of heterojunction has capacitance characteristic, so the voltage that produces after 5 pairs of laser radiations of resistance plays discharge process.
In above-mentioned technical scheme, described first electrode 3 be shaped as a point, a line, an or circle being provided with of light responsive material layer 2 edge.Second electrode 4 be shaped as point, line or face; Be connected any position of silicon chip.First electrode 3 and second electrode 4 can directly weld with indium or scolding tin, also can be with method evaporation gold, silver, platinum or aluminium electrodes such as vacuum coating or magnetron sputterings.
No matter provided by the invention is the laser detector of silicon-strontium titanate doping double-layer structure, or the laser detector of silicon-insulation course-strontium titanate doping three-decker, is consistent for the effect of exploring laser light.When pulsed laser irradiation during to strontium titanate doping film or silicon surperficial, strontium titanate doping film or silicon substrate absorb and produce photo-generated carrier-electronics behind the laser pulse and the hole is right, under heterojunction boundary potential barrier effect of electric field, will produce the photovoltage signal between silicon and strontium titanate doping, this effect is referred to as photovoltaic effect.No matter be double-layer structure or three-decker, all have a junction capacity between silicon and strontium titanate doping, therefore resistance in parallel between silicon and strontium titanate doping layer plays discharge process, reduces discharge time and eliminates the influence of junction capacity to response speed.If do not consider the width of pulse voltage signal that pulse laser produces, also can not connect resistance.
The fast response broad band laser detector that utilizes strontium titanate doping and Si heterojunction material to make provided by the invention, its advantage is, can use film-forming methods such as laser molecular beam epitaxy, pulsed laser deposition, magnetron sputtering, electron beam evaporation and viscose process, strontium titanate doping and insulation course and the direct epitaxial growth of strontium titanate doping on silicon chip; Or by SrO and BaO cushion, on silicon chip, the preparation method is simple strontium titanate doping and insulation course and strontium titanate doping epitaxial growth.This laser detector is photogenic voltage type photodetector, directly produces voltage signal after rayed, without any need for adding auxiliary power supply and electronic circuit.Can the exploring laser light energy, multiple laser parameter such as laser power, laser pulse shape.Its response wave band of fast response broad band laser detector of the present invention is a kind of fast response broad band laser detector from the ultraviolet to the far infrared.Detection process is a ultrafast process, and the forward position of pulse voltage signal that photogenic voltage produces has only hundreds of psec to a nanosecond, the laser waveform of detectable ns pulsewidth.0.5mJ/mm
2Laser pulse can produce the voltage signal of nearly hundred mV, have very high sensitivity.Therefore silicon provided by the invention and strontium titanate doping laser detector all are widely used at aspects such as military affairs, national defence, scientific research, production and lives.
Description of drawings
Fig. 1. the photo-detector of silicon-strontium titanate doping double-layer structure
Fig. 2. the photo-detector of silicon-insulation course-strontium titanate doping three-decker
Fig. 3. the photo-detector of silicon-cushion-strontium titanate doping three-decker
Fig. 4. with the SrNb of 500,000,000 oscillograph store recordings
0.01Ti
0.99O
3/ Si double-layer structure laser detector, the pulse voltage signal that measurement YAG laser output wavelength 1.06 μ m, pulsewidth 25ps laser pulse are produced.
Fig. 5. with the SrNb of 500,000,000 oscillograph store recordings
0.01Ti
0.99O
3/ SrTiO
3/ Si three-decker laser detector, the pulse voltage signal that measurement YAG frequency tripling laser output wavelength 355nm, pulsewidth 15ps laser pulse are produced.
Drawing is described as follows:
The 1-silicon substrate; 2-light responsive material layer; 3-first electrode;
The 4-second electrode 5-resistance; The 6-contact conductor;
The 7-insulation course; The 8-cushion;
Embodiment
Embodiment 1, below in conjunction with the drawings and specific embodiments the present invention is described in detail
With reference to figure 1, select for use laser molecular beam epitaxial device to prepare the photo-detector of silicon-strontium titanate doping double-layer structure.
Substrate 1 is a p type silicon chip, the direct thereon thick n type SrNb of epitaxial growth 180nm
0.01Ti
0.99O
3Light responsive material layer 2 forms SrNb
0.01Ti
0.99O
3The two-layer heterojunction structure sample of/Si cuts into and is of a size of 3 * 3mm
2The detector core; Be about second electrode 4 of φ 2mm circle with indium in substrate 1 surface-welding, with indium at SrNb
0.01Ti
0.99O
3On the surface at an angle of light responsive material layer 2, welding is about first electrode 3 of φ 1mm circle; Make contact conductor 6 with the copper cash of two φ 0.1mm, and one end of two φ 0.1mm copper electrode lead-in wires 6 is welded on respectively on first electrode 3 and second electrode 4 with indium; Resistance 5 is selected 5 Ω resistances for use, and with its two ends respectively with the welding of the output terminal of two contact conductors 6; Like this detector core just preparation finish, the detector core is packed in the aluminium probe body, draw output terminal with coaxial fitting.
Select 500,000,000 oscillographs for use, with above-mentioned prepare have a SrNb
0.01Ti
0.99O
3/ Si double-layer structure laser detector, the laser pulse of measurement YAG laser output wavelength 1.06 μ m, pulsewidth 25ps, Fig. 4 is with waveform voltage signal that laser pulse produced of oscillograph store recording detector.The rising edge ascending time of voltage signal only is～1.5ns that half width only is～2.1ns 0.5mJ/mm
2Laser pulse can produce the voltage signal of nearly hundred mV.Therefore, illustrate that a ultrafast process is not only in the detection of this detector, and have very high sensitivity.
Press the laser detector of embodiment 1 preparation double-layer structure, select pulse laser equipment for use, on 2 inches n type silicon chip substrate 1 directly epitaxial growth 200nm thick, p type SrIn
0.005Ti
0.995O
3Film light responsive materials layer 2 is prepared SrIn
0.005Ti
0.995O
3The two-layer heterojunction structure sample of/Si is as chip, and other structure is with embodiment 1.
With reference to figure 2, select magnetic control sputtering device for use, prepare the laser detector of one silicon-cushion-strontium titanate doping three-decker.The SrO of sputter growth one deck 0.4nm is as cushion 8 on n type silicon chip substrate 1, the p type SrMn that sputter one deck 800nm is thick thereon again
0.01Ti
0.99O
3Film light responsive materials layer 2 forms SrMn
0.01Ti
0.99O
3The two-layer heterojunction structure chip of/Si; Or with reference to figure 3, the SrTiO of sputter growth one deck 1nm on SrO cushion 8
3As insulation course 7; And then the p type SrMn that sputter one deck 800nm is thick on insulation course 7
0.01Ti
0.99O
3Film light responsive materials layer 2.At SrMn
0.01Ti
0.99O
3An edge on the film light responsive materials layer 2 uses the wide platinum of vacuum evaporation 0.5mm as first electrode 3, and all the other are the same with the fast response broad band laser detector structures of pressing embodiment 1 preparation.
With reference to figure 3, prepare the laser detector of one silicon-cushion-strontium titanate doping three-decker
Select the laser molecular beam epitaxy device for use, on p type silicon chip 1 BaO of epitaxial growth 50nm as cushion 8, the thick n type of epitaxial growth 0.5nm SrSb again
0.5Ti
0.5O
3Film light responsive materials layer 2 forms SrSb
0.5Ti
0.5O
3The two-layer heterojunction structure chip of/Si is at SrSb
0.5Ti
0.5O
3Four edge magnetic control sputtering devices of thin layer, silver first electrode 3 that sputter 0.5mm is wide, center on silicon chip 1 silver second electrode 4 of magnetron sputtering diameter phi 5mm, all the other are the same with the fast response broad band laser detector structure of embodiment 1 preparation.
With reference to figure 1, prepare the laser detector of one silicon-strontium titanate doping two-layer structure
Select laser molecular beam epitaxial device for use, direct thick, the n type SrTa of epitaxial growth 5 μ m on p type silicon chip 1
0.02Ti
0.98O
3Film light responsive materials layer 2 is prepared SrTa
0.02Ti
0.98O
3The fast response broad band laser detector structure that the two-layer heterojunction structure chip sample of/Si, all the other structures are pressed embodiment 1 preparation is the same.
With reference to figure 1, prepare the laser detector of one silicon-strontium titanate doping two-layer structure
Select laser molecular beam epitaxial device for use, direct thick, the n type Sr of epitaxial growth 0.5nm on p type silicon
0.995La
0.005TiO
3Film light responsive materials layer 2 is prepared Sr
0.98La
0.02TiO
3The two-layer heterojunction structure chip of/Si, the resistance of the 1M Ω that buys with market is made resistance 5, and all the other are the same with the fast response broad band laser detector structure of embodiment 1 preparation.
Embodiment 7
With reference to figure 1, prepare the laser detector of a silicon one strontium titanate doping two-layer structure
Select laser molecular beam epitaxial device for use, the direct thick Sr of epitaxial growth 200nm on p type silicon chip 1
0.5Y
0.5TiO
3Film light responsive materials layer 2, Sr
0.5Y
0.5TiO
3The two-layer heterojunction structure chip of/Si, resistance 5 is the resistance of 1K, all the other are the same with the fast response broad band laser detector structure of embodiment 1 preparation.
Embodiment 8
With reference to figure 1, prepare the laser detector of one silicon-strontium titanate doping two-layer structure
Select laser molecular beam epitaxial device for use, the direct thick Sr of epitaxial growth 1 μ m on p type silicon chip 1
0.8Gd
0.2TiO
3Film light responsive materials layer 2 is prepared Sr
0.8Ge
0.2TiO
3The fast response broad band laser detector structure that the two-layer heterojunction structure chip sample of/Si, all the other structures are pressed embodiment 1 preparation is the same.
Embodiment 9
With reference to figure 1, prepare the laser detector of one silicon-strontium titanate doping two-layer structure
Select laser molecular beam epitaxial device for use, the direct thick Sr of epitaxial growth 1 μ m on p type silicon chip 1
0.8Dy
0.2TiO
3Film light responsive materials layer 2 is prepared Sr
0.8Dy
0.2TiO
3The fast response broad band laser detector structure that the two-layer heterojunction structure chip sample of/Si, all the other structures are pressed embodiment 1 preparation is the same.
Embodiment 10
With reference to figure 1, prepare the laser detector of one silicon-strontium titanate doping two-layer structure
Select laser molecular beam epitaxial device for use, the direct thick Sr of epitaxial growth 1 μ m on p type silicon chip 1
0.8Sm
0.2TiO
3Film light responsive materials layer 2 is prepared Sr
0.8Dy
0.2TiO
3The fast response broad band laser detector structure that the two-layer heterojunction structure chip sample of/Si, all the other structures are pressed embodiment 1 preparation is the same.
Embodiment 11
With reference to figure 1, prepare the laser detector of one silicon-strontium titanate doping two-layer structure
Select laser molecular beam epitaxial device for use, the direct thick SrFe of epitaxial growth 100nm on n type silicon chip 1
0.05Ti
0.995O
3Film light responsive materials layer 2 is prepared SrFe
0.1Ti
0.9O
3The two-layer heterojunction structure chip sample of/Si, all the other structures are the same by the fast response broad band laser detector structure of utilizing heterojunction material to make of embodiment 1 preparation.
Embodiment 12
With reference to figure 1, prepare the laser detector of one silicon-strontium titanate doping two-layer structure
Select laser molecular beam epitaxial device for use, the direct thick SrMg of epitaxial growth 100nm on n type silicon chip 1
0.05Ti
0.95O
3Film light responsive materials layer 2 is prepared SrMg
0.05Ti
0.95O
3The fast response broad band laser detector structure that the two-layer heterojunction structure chip sample of/Si, all the other structures are pressed embodiment 1 preparation is the same.
Embodiment 13
With reference to figure 1, prepare the laser detector of one silicon-strontium titanate doping two-layer structure
Select laser molecular beam epitaxial device for use, the direct thick SrW of epitaxial growth 100nm on n type silicon chip 1
0.1Ti
0.9O
3Film light responsive materials layer 2 is prepared SrW
0.1Ti
0.9O
3The fast response broad band laser detector structure that the two-layer heterojunction structure chip sample of/Si, all the other structures are pressed embodiment 1 preparation is the same.
Embodiment 14
With reference to figure 2, prepare the laser detector of one silicon-insulation course-strontium titanate doping three-decker
Select for use laser molecular beam epitaxial device to be prepared, earlier the thick SrTiO of extension 0.4nm on n type silicon chip 1
3Layer is made insulation course 7, again at SrTiO
3On the insulation course 7, the SrIn that epitaxial growth 300nm is thick
0.01Ti
0.99O
3Film light responsive materials layer 2 forms SrIn
0.01Ti
0.99O
3/ SrTiO
3Three layers of heterojunction structure chip of/Si are cut to and are of a size of 1 * 15cm
2The detector core; Remove the monox on silicon chip 1 surface with hydrofluorite, be about second electrode 4 of φ 2mm with indium in silicon chip 1 surface-welding, usefulness tin is at SrIn
0.01Ti
0.99O
3An angle surface place welding of thin layer 2 is about first electrode 3 of φ 1mm circle; Make contact conductor 6 with the copper cash of two φ 0.1mm, and one end of two φ 0.1mm copper electrode lead-in wires 6 is welded on respectively on first electrode 3 and second electrode 4 with indium; Select for use the lead of 0.01 Ω to make resistance 5, and with its two ends respectively with the welding of the output terminal of two contact conductors 6; The detector core just prepares completely like this, and the detector core is packed in the copper probe body, draws output terminal with coaxial fitting.
Select 500,000,000 oscillographs for use, with above-mentioned SrIn
0.01Ti
0.99O
3/ SrTiO
3/ Si three-decker laser detector, the laser pulse of measurement YAG frequency tripling laser output wavelength 355nm, pulsewidth 15ps.Fig. 5 is with laser pulse of oscillograph store recording detector, the waveform voltage signal that is produced.As can be seen from Figure 5, the rising edge ascending time of voltage signal that pulse laser produces only is～1.3ns that half width only is～2ns that the laser energy of 0.5mJ can produce the voltage signal of 70mV.Therefore, the detector of three-decker is the same with the detector of double-layer structure, is not only a ultrafast process, and has very high sensitivity.
Embodiment 15
With reference to figure 2, prepare the laser detector of one silicon-insulation course-strontium titanate doping three-decker
Press embodiment 14 structure fabrications, its insulation course 7 is LaAlO
3, its thickness is 1nm, all the other structures are the same with the fast response broad band laser detector structure of embodiment 14.
Embodiment 16
Press embodiment 14 structure fabrications, select BaTiO for use
3Make insulation course 7, its thickness is 500nm, and all the other structures are the same with the fast response broad band laser detector structure of embodiment 14.
Embodiment 17
Press embodiment 14 structure fabrications, select ZrO for use
3Make insulation course 7, its thickness is 300nm, and all the other structures are the same with the fast response broad band laser detector structure of embodiment 14.
Embodiment 18
Press embodiment 14 structure fabrications, select for use MgO to make insulation course 7, its thickness is 100nm, and all the other structures are the same with the fast response broad band laser detector structure of embodiment 14.
Embodiment 19
Press embodiment 14 structure fabrications, select LaMnO for use
3Make insulation course 7, its thickness is 100nm, and all the other structures are the same with the fast response broad band laser detector structure of embodiment 14.
Embodiment 20
Press embodiment 1 structure fabrication, use aluminium to make electrode 3, all the other structures are with embodiment 1.
Embodiment 21
Press embodiment 1 structure fabrication, use gold to make electrode 3, all the other structures are with embodiment 1.
Embodiment 22
Press the laser detector of embodiment 1 preparation double-layer structure, select the elargol method for use, on 2 inches n type silicon chip substrate 1 growth 5 μ m thick, p type SrNb
0.01Ti
0.99O
3Film light responsive materials layer 2 is prepared SrNb
0.01Ti
0.99O
3The two-layer heterojunction structure sample of/Si is as chip, and other structure is with embodiment 1.
Embodiment 23
The SrO of sputter growth one deck 0.4nm is as cushion 8 on n type silicon substrate 1, the thicker SrTiO of epitaxial growth one deck 0.4nm
3Layer is made insulation course 7, again at SrTiO
3On the insulation course 7, the SrIn that epitaxial growth 300nm is thick
0.01Ti
0.99O
3Film light responsive materials layer 2 forms SrIn
0.01Ti
0.99O
3/ SrTiO
3Three layers of heterojunction structure chip of/Si are cut to and are of a size of 1 * 15cm
2The detector core; All the other are with embodiment 14.
Claims (6)
1. quick response broadband optical detector, comprising: p type or n type silicon chip are substrate (1); At described p type or n type silicon chip is that the strontium titanate doping thin layer that substrate (1) is gone up corresponding growth one deck n type or p type is made chip; It is characterized in that: also comprise a resistance (5), first electrode (3), second electrode (4) and two lead-in wires (6), an and insulation course (7), described insulation course (7) epitaxial growth is between the strontium titanate doping thin layer of substrate (1) and described n type or p type, and the thickness of described insulation course (7) is 10nm～500nm; Described strontium titanate doping thin layer is light responsive material layer (2), and this light responsive material layer (2) thickness is 0.5nm-5 μ m; First electrode (3) is arranged on the light responsive material layer (2), second electrode (4) is arranged on substrate (1) face, one end of two contact conductors (6) is connected with second electrode (4) with first electrode (3) respectively, and the other end of contact conductor (6) is a signal output part; The two ends of resistance (5) are connected with the output terminal of two contact conductors (6) respectively;
Described quick response broadband optical detector is a photogenic voltage type photodetector;
Described strontium titanate doping thin layer is Sr
1-xR
xTiO
3Or SrM
yTi
1-yO
3Wherein R comprises: La, Dy, Y, Sm or Gd; Wherein M comprises: Nb, Sb, Ta, In, Mn, W, Mg or Fe; Its x value is 0.005～0.5, and the y value is 0.005～0.5;
The resistance of described resistance (5) is 0.01 Ω～1M Ω.
2. by the described quick response broadband optical detector of claim 1, it is characterized in that: also be included in described silicon substrate (1) and go up epitaxial growth one SrO or BaO cushion (8), go up the described insulation course of epitaxial growth (7) at described SrO or BaO cushion (8) again, go up the described light responsive material layer of epitaxial growth (2) at this insulation course (7).
3. by the described quick response broadband optical detector of claim 1, it is characterized in that: described insulation course (7) comprising: lanthanum aluminate LaAlO
3, strontium titanates SrTiO
3, barium titanate BaTiO
3, zirconia ZrO
2, lanthanum manganate LaMnO
3Or magnesium oxide MgO.
4. by claim 1,2 or 3 described quick response broadband optical detectors, it is characterized in that: also comprise a metal shell, its chip is installed in the described metal shell.
5. by the described quick response broadband optical detector of claim 1, it is characterized in that: first electrode (3) and second electrode (4) directly weld with indium or scolding tin, or with vacuum coating or magnetron sputtering coating method evaporation gold, silver, platinum or aluminium electrode.
6. by the described quick response broadband optical detector of claim 1, it is characterized in that: described first electrode (3) be shaped as a point, a line or a circle that is provided with at light responsive material layer (2) edge; Being shaped as a bit of second electrode (4), linear or face; Be connected any position of silicon chip.
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| CN102157655B (en) * | 2011-02-28 | 2013-01-02 | 浙江大学 | Strontium titanate/P-type silicon heterojunction-based electroluminescent device and preparation method thereof |
| US9786855B2 (en) | 2014-12-30 | 2017-10-10 | Indian Institute Of Technology Bombay | Micro electro mechanical system (MEMS) based wide-band polymer photo-detector |
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| US5621238A (en) * | 1994-02-25 | 1997-04-15 | The United States Of America As Represented By The Secretary Of The Air Force | Narrow band semiconductor detector |
| US6059895A (en) * | 1997-04-30 | 2000-05-09 | International Business Machines Corporation | Strained Si/SiGe layers on insulator |
| CN1165084C (en) * | 2001-02-27 | 2004-09-01 | 中国科学院物理研究所 | Semiconductor and perovskite structure oxide p-n junction |
| CN1535472A (en) * | 2001-07-20 | 2004-10-06 | Ħ��������˾ | Epitaxial semiconductor on insulator (SOI) structures and devices |
| CN1485935A (en) * | 2002-09-27 | 2004-03-31 | 中国科学院物理研究所 | Strontium titanate doping and lanthanum manganese oxygen doping giant reluctivity device and its preparing process |
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