CN100566938C - Substrate polishing apparatus - Google Patents
Substrate polishing apparatus Download PDFInfo
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- CN100566938C CN100566938C CNB200380107815XA CN200380107815A CN100566938C CN 100566938 C CN100566938 C CN 100566938C CN B200380107815X A CNB200380107815X A CN B200380107815XA CN 200380107815 A CN200380107815 A CN 200380107815A CN 100566938 C CN100566938 C CN 100566938C
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- substrate
- polishing
- burnishing surface
- holding mechanism
- apical ring
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Abstract
A kind of substrate polishing apparatus, wherein, by will being urged on the burnishing surface of polishing block by polished substrate that substrate holding mechanism is keeping, polishing fluid is supplied on the described burnishing surface simultaneously, and described substrate is polished by the relative motion between substrate and the burnishing surface.In the polishing process of described substrate, the temperature of described substrate is maintained in 40 ℃ to 65 ℃ scope.
Description
Technical field
The present invention relates to a kind of substrate holding mechanism that is used in the polissoir, described polissoir is used for for example surface of semiconductor wafer of polishing substrate, so that substrate surface is smooth.The invention still further relates to the substrate polishing apparatus and the substrate polishing apparatus that use described substrate holding mechanism.
Background technology
In recent years, along with the progress of the manufacturing process of highly intergrated semiconductor device, it is more and more littler and meticulous that circuit layout or interconnect architecture become, and the gap between the Butut is also reducing.Along with wiring the reducing of gap, the depth of focus when utilizing technology such as photoetching to form circuitous pattern becomes more and more shallow.Particularly in the structure below photoetching 0.5 μ m, because the photoetching depth of focus, will need high surface smoothness by the semiconductor wafer surface that lithographic equipment forms the circuitous pattern image.For realizing required surface smoothness, extensively adopt the polishing technology that uses polissoir.
Such polissoir has turntable, and polishing cloth is combined in the turntable top to form burnishing surface.Polissoir also has the apical ring as substrate holding mechanism.Turntable and apical ring rotate independently of one another with revolution separately.By will being pushed on the burnishing surface that is against turntable by polished substrate that apical ring is keeping, polishing fluid is applied on the burnishing surface simultaneously, thereby substrate surface is finished to smooth minute surface.After finishing polishing, substrate is discharged from the apical ring body and is sent to subsequent processing, for example matting.
In the polissoir of Miao Shuing, keeping the apical ring substrate retaining part of substrate that will be polished to be out of shape in the above because of the frictional heat that produces in the substrate polishing.In addition, polishing ability may change because of the Temperature Distribution on the burnishing surface.The variation of the distortion of the substrate retaining part of apical ring and polishing ability causes substrate polishing function reduction.In addition, as previously mentioned, such polissoir applies for example slurry of polishing fluid on the burnishing surface of polishing block when polishing substrate.Polishing fluid sticks on the outer surface of apical ring, the particularly outer surface easily, and in this drying.If dry solid matter drops on the burnishing surface, then can have a negative impact to polishing process.
For the substrate retaining part that prevents apical ring is out of shape because of the frictional heat that produces in the substrate polishing, JP-A-11-347936 (Japanese Patent Application Publication document) disclose will have thermal conductive resin material attached on the substrate retaining part (wafer retainer), so that uniformity of temperature profile, and be provided with refrigerant flow path in the substrate retaining part, so that by refrigerant flow path supply cold-producing medium, with cooling substrate retaining part, in addition, the substrate retaining part is provided with fin, to promote heat dissipation.Yet, disclosed method still is not enough to cool off effectively the peripheral part (particularly lead ring) of the substrate retaining part of apical ring among the JP-A-11-347936, therefore there is following problems, it is polishing fluid, slurry for example, may stick on the peripheral part of substrate retaining part, and be dried and the polishing chip close attachment that produces in when polishing with substrate in this.
Along with the diameter of semiconductor chip increases, the contact area between the polishing pad of polishing block and the substrate that will be polished has also increased.Therefore, temperature trends towards raising when substrate polishes.Simultaneously, common measure is to use the substrate polishing apparatus with complex mechanism, so that control polishing profile.Many polissoirs have adopted such method, and wherein in described complex mechanism, the element with great friction coefficient is urged the contact polishing pad.This may cause in polishing that also temperature raises.
Temperature rising meeting exerts an influence to the surface and the paste composition of polishing pad in the substrate polishing process, and cause descending, can not stably obtain desirable flatness and polishing speed simultaneously by the flatness of polissoir burnishing surface of the substrate of acquisition under certain polishing speed (polishing rate).
Summary of the invention
The present invention considers above-described situation and develops.The purpose of this invention is to provide a kind of substrate holding mechanism, a kind of substrate polishing apparatus and a kind of substrate polishing apparatus, they can make the heat that produces in the process that polished substrate is polished minimize, and/or cool off the substrate retaining part of substrate holding mechanism and the burnishing surface of polishing block effectively, and/or can be when substrate polishes with the temperature maintenance of the burnishing surface of polishing block and substrate in predetermined temperature range, therefore and/or stably keep the flatness and the polishing speed of substrate burnishing surface, and/or further can prevent polishing fluid and polishing chip adhesion and dry effectively in the peripheral part of substrate retaining part.
The invention provides a kind of substrate holding mechanism, comprising: mounting flange; Be fixed on the supporting member on the described mounting flange; Be fixed on the described mounting flange and be arranged in the spacing ring of described supporting member periphery.Will polished substrate be maintained at the downside by the cingens described supporting member of described spacing ring, described substrate is urged on burnishing surface.In substrate holding mechanism, described spacing ring is made by polyimide compound.
By using the spacing ring of making by polyimide compound as mentioned above, can obtain following advantage.For the polishing pad that forms burnishing surface, polyimide compound has minimum wear rate, and minimum by fricative heat, as described later.Therefore, spacing ring has the service time of prolongation, and keeps high polishing performance in can be for a long time, and the temperature of burnishing surface is raise minimize.
The invention provides a kind of substrate holding mechanism, comprising: mounting flange; Be fixed on the supporting member on the described mounting flange; Be fixed on the described mounting flange and be arranged in the spacing ring of described supporting member periphery.Will polished substrate be maintained at the downside by the cingens described supporting member of described spacing ring, described substrate is urged on burnishing surface.Described mounting flange is provided with the runner that is connected with described spacing ring at least, and the temperature-controlled gas quilt is by described runner supply, to cool off described mounting flange, described supporting member and described spacing ring.
As mentioned above, mounting flange is provided with the runner that is connected with described spacing ring at least, and the temperature-controlled gas quilt is by described runner supply.Therefore, if spacing ring produces heat because of friction when substrate polishes, heat can efficiently be got rid of.Therefore, can keep high polishing performance.
According to the present invention, described spacing ring is provided with a plurality of through holes that communicate with described runner, is used for the gas of the described runner of flowing through is ejected into the burnishing surface of polishing block.
As mentioned above, spacing ring is provided with a plurality of through holes, and the temperature-controlled gas quilt is by described runner supply.Like this, temperature-controlled gas is sprayed on the burnishing surface by through hole.Therefore, burnishing surface can effectively be cooled off, and the temperature of burnishing surface raises and can minimize.
According to the present invention, substrate holding mechanism also comprises switching device shifter, is used for optionally refrigerating gas and spacing ring cleaning fluid being supplied to described runner.
By switching device shifter is provided as mentioned above, is used for optionally supplying refrigerating gas and spacing ring cleaning fluid, thereby can optionally carries out the cooling of spacing ring and burnishing surface and the cleaning of spacing ring to runner.
According to the present invention, in substrate holding mechanism, the temperature-controlled gas by described runner supply is a wet gas.
By using humidity and temperature-controlled gas as mentioned above, can cool off spacing ring and prevent to adhere to polishing fluid and polishing chip drying on the spacing ring by runner supply.
According to the present invention, substrate holding mechanism is provided with pressure chamber between described mounting flange and described supporting member, and pressure fluid is supplied to described pressure chamber to push described supporting member.The pressure of the gas by described runner supply is lower than the pressure of the fluid that is fed to described pressure chamber.
The pressure of the gas by as mentioned above will be by described runner supply is arranged to be lower than the pressure of the fluid that is fed to described pressure chamber, spacing ring can be cooled, and can not cause by the pressure of the gas of runner supply, just flowpath pressure influences the pressure that is used to push supporting member in the pressure chamber.
The invention provides a kind of substrate polishing apparatus, comprising: substrate holding mechanism; Polishing block with burnishing surface.By will being urged on the burnishing surface of described polishing block by polished substrate that described substrate holding mechanism is keeping, by the relative motion between the burnishing surface of the described substrate that kept by described substrate holding mechanism and described polishing block, described substrate is polished.Described substrate holding mechanism is according to previously described substrate holding mechanism.
By in substrate polishing apparatus, using above-described substrate holding mechanism, make substrate polishing apparatus can obtain the characteristic of above-described substrate holding mechanism, and can excellent ground polishing substrate.
The invention provides a kind of substrate polishing apparatus, comprising: substrate holding mechanism; Polishing block with burnishing surface.By will being urged on the burnishing surface of described polishing block by polished substrate that described substrate holding mechanism is keeping, by the relative motion between the burnishing surface of the described substrate that kept by described substrate holding mechanism and described polishing block, described substrate is polished.Substrate polishing apparatus is provided with cooling device, is used to cool off the burnishing surface of described polishing block and the substrate retaining part of described substrate holding mechanism.
By cooling device is set as mentioned above, be used to cool off the burnishing surface of polishing block and the substrate retaining part of substrate holding mechanism, make that the burnishing surface of polishing block and the substrate retaining part of substrate holding mechanism can be maintained in predetermined temperature range when substrate polishes, and therefore make substrate stably to be polished with desirable flatness and predetermined polishing speed.
According to the present invention, the cooling device in the substrate polishing apparatus is arranged in the following manner.The vault that the substrate retaining part of the burnishing surface of polishing block and substrate holding mechanism is had intake and outlet covers, utilize by to the inside part of described vault vacuumize the air-flow that (emptying) produce and cool off the burnishing surface of described polishing block and the substrate retaining part of described substrate holding mechanism.
As mentioned above, the vault that the substrate retaining part of the burnishing surface of polishing block and substrate holding mechanism is had intake and outlet covers, the substrate retaining part utilization of the burnishing surface of polishing block and substrate holding mechanism by to the inside part of described vault vacuumize the air-flow that produces and cool off.Therefore,, and do not need to change the essential structure that has substrate polishing apparatus, just can when substrate polishes, the burnishing surface of polishing block and the substrate retaining part of substrate holding mechanism be maintained in the predetermined temperature range by simple structure.
According to the present invention, the described cooling device in the substrate polishing apparatus comprises the cryogenic gas feeding mechanism, wherein, by described intake cryogenic gas is fed to described vault from described cryogenic gas feeding mechanism.
By above-described cryogenic gas feeding mechanism is set, can obtain following advantage.If when substrate polishes, can not utilize simply by to the inside part of described vault vacuumize the air-flow that produces the burnishing surface of polishing block and the substrate retaining part of substrate holding mechanism maintained in the predetermined temperature range, then cryogenic gas is fed to the vault from the cryogenic gas feeding mechanism by intake, thereby the burnishing surface of polishing block and the substrate retaining part of substrate holding mechanism maintain in the predetermined temperature range easily when substrate polishes.
According to the present invention, described cooling device in the substrate polishing apparatus is arranged in the burnishing surface part adjacent with substrate holding mechanism and is positioned at polishing block that side with respect to the substrate motion, and cooling device is arranged such that also the substrate retaining part of substrate holding mechanism is arranged in by the described gas stream flow channel that produces that partly vacuumizes.
As mentioned above, be positioned at the near zone of polishing block with respect to the polishing block burnishing surface part of that side of substrate motion, just because the near zone of the polishing block burnishing surface part of that side of a large amount of frictional heat of a large amount of caused by relative motion between burnishing surface and the substrate, and the substrate retaining part of substrate holding mechanism, be disposed in by described and partly vacuumize in the gas stream flow channel that produces.Therefore, the burnishing surface part that produces a large amount of frictional heat can effectively be cooled off, thereby the substrate retaining part of the burnishing surface of polishing block and substrate holding mechanism can maintain in the predetermined temperature range.
According to the present invention, cooling device in the substrate polishing apparatus comprises the space bar that is located in the described vault, be used to control by the described air-flow that produces that partly vacuumizes, so that be positioned at the near zone of polishing block with respect to the polishing block burnishing surface part of that side of substrate motion, and the substrate retaining part of described substrate holding mechanism, be arranged in by the described gas stream flow channel that produces that partly vacuumizes.
As mentioned above, the vault that the substrate retaining part of the burnishing surface of polishing block and substrate holding mechanism is had intake and outlet covers, and is provided with and is used to control because of partly vacuumizing the space bar of the air-flow that produces.Therefore, being positioned at the near zone of polishing block with respect to the polishing block burnishing surface part of that side of substrate motion, and the substrate retaining part of described substrate holding mechanism, can be positioned in the gas stream flow channel that produces in the vault.Therefore,, and do not need to change the essential structure of existing substrate polishing apparatus by simple structure, just can be when substrate polishes the burnishing surface of polishing block and the substrate retaining part of substrate holding mechanism can maintain in the predetermined temperature range.
According to the present invention, described cooling device in the substrate polishing apparatus comprises room temperature air feeding mechanism or cryogenic gas feeding mechanism, is used to be used to cool off the burnishing surface of described polishing block and the substrate retaining part of described substrate holding mechanism from the room temperature air of described room temperature air feeding mechanism or from the cryogenic gas of described cryogenic gas feeding mechanism.
As mentioned above, the substrate retaining part of the burnishing surface of polishing block and substrate holding mechanism is cooled off from the cryogenic gas feeding mechanism from room temperature air feeding mechanism or cryogenic gas by room temperature air.Therefore,, and do not need to change the essential structure of existing substrate polishing apparatus by simple structure, just can be when substrate polishes the burnishing surface of polishing block and the substrate retaining part of substrate holding mechanism can maintain in the predetermined temperature range.
According to the present invention, described room temperature air feeding mechanism in the substrate polishing apparatus or described cryogenic gas feeding mechanism are mounted for cooling off and are positioned at the near zone of polishing block with respect to the polishing block burnishing surface part of that side of substrate motion.
As mentioned above, the cooling of room temperature air feeding mechanism or cryogenic gas feeding mechanism is positioned at the near zone of polishing block with respect to the polishing block burnishing surface part of that side of substrate motion, just because the near zone of the polishing block burnishing surface part of that side of a large amount of frictional heat of a large amount of caused by relative motion between burnishing surface and the substrate.Therefore, the substrate retaining part of the burnishing surface of polishing block and substrate holding mechanism can maintain in the predetermined temperature range effectively.
According to the present invention, the described cooling device in the substrate polishing apparatus comprises the cryogenic gas feeding mechanism, is used for from the reverse side supply cryogenic gas of described cryogenic gas feeding mechanism to described substrate, to cool off polished substrate.
As mentioned above, cryogenic gas is fed to the reverse side of polished substrate with the cooling substrate from the cryogenic gas feeding mechanism.Therefore, substrate can be cooled efficiently.Like this, substrate can be maintained predetermined temperature, so substrate can stably be polished with desirable flatness and predetermined polishing speed.
According to the present invention, the described cooling device in the substrate polishing apparatus comprises the constant flow control valve, is used to guarantee from the predetermined flow velocity of the cryogenic gas of described cryogenic gas feeding mechanism supply.
Be fed to substrate reverse side cryogenic gas and do not stagnate by the constant flow control valve being set as mentioned above, can making with predetermined flow rate.Therefore, the temperature of polished substrate can maintain in the predetermined temperature range.
According to the present invention, the described constant flow control valve in the substrate polishing apparatus is the adjustable aperture adjustable type constant flow control valve of valve opening.
By using aperture adjustable type constant flow control valve as mentioned above, can control the flow velocity of the cryogenic gas of the reverse side that is fed to polished substrate as the constant flow control valve.Therefore, the temperature of polished substrate can be controlled in the predetermined temperature range.
According to the present invention, substrate polishing apparatus also comprises and transmits the vacuum maintaining body of the device of described substrate after being used as polishing, it has vacuum extractor, be used for from the runner emptying cryogenic gas of supply cryogenic gas, be used for keeping described substrate from described runner suction cryogenic gas so that utilize.
By the vacuum maintaining body is set as mentioned above, can promptly the cryogenic gas service duct be vacuumized by means of the cryogenic gas runner that is used to cool off substrate, and the mode that keeps with vacuum transmits substrate by vacuum extractor.
According to the present invention, substrate polishing apparatus is provided with check valve in the pipeline that described constant flow control valve is installed.
As mentioned above, check valve is located in the pipeline that described constant flow control valve is installed.Therefore, when runner is evacuated by vacuum extractor, there is not gas to be back in the runner.Therefore, can utilize vacuum to keep substrate.
The invention provides a kind of substrate polishing apparatus, wherein, by will being urged on the burnishing surface of polishing block by polished substrate that substrate holding mechanism is keeping, polishing fluid is supplied on the described burnishing surface simultaneously, and described substrate is polished by the relative motion between substrate and the burnishing surface.In the polishing process of described substrate, the temperature of described substrate is maintained in 40 ℃ to 65 ℃ scope.
As mentioned above, substrate temperature maintains in 40 ℃ to 65 ℃ scope when substrate polishes, so substrate can stably be polished with desirable flatness and predetermined polishing speed.
The invention provides a kind of substrate polishing apparatus, wherein, by will being urged on the burnishing surface of polishing block by polished substrate that substrate holding mechanism is keeping, polishing fluid is supplied on the described burnishing surface simultaneously, and described substrate is polished by the relative motion between substrate and the burnishing surface.In the polishing process of described substrate, the temperature of the burnishing surface of described polishing block and the temperature of described substrate are maintained in 40 ℃ to 65 ℃ scope.
As mentioned above, the temperature of the burnishing surface of polishing block and substrate temperature maintain in 40 ℃ to 65 ℃ scope when substrate polishes, thereby the flatness of substrate burnishing surface and polishing speed can stabilisations.
In substrate polishing apparatus according to the present invention, the vault that the substrate retaining part of the burnishing surface of described polishing block and substrate holding mechanism is had intake and outlet covers, utilization by to the inside part of described vault vacuumize the air-flow that produces and from the cryogenic gas of cryogenic gas feeding mechanism supply, the substrate retaining part of the burnishing surface of described polishing block and described substrate holding mechanism is cooled.
As mentioned above, the vault that the substrate retaining part of the burnishing surface of polishing block and substrate holding mechanism is had intake and outlet covers, and the substrate retaining part of the burnishing surface of polishing block and substrate holding mechanism is vacuumized the air-flow that produces and cools off from the cryogenic gas of cryogenic gas feeding mechanism supply by the inside part ground to described vault.Therefore, can polish and easily the burnishing surface of polishing block and the substrate retaining part of substrate holding mechanism be maintained in the predetermined temperature range simultaneously, and not need to change the essential structure that has substrate polishing apparatus.
In substrate polishing apparatus according to the present invention, be arranged in polishing block and be positioned in by described with respect to the near zone of the polishing block burnishing surface part of that side of substrate motion and partly vacuumize being used to of producing and cool off the gas stream flow channel of the substrate retaining part of described burnishing surface and described substrate holding mechanism.
As mentioned above, being arranged in polishing block is positioned in by the described gas stream flow channel that produces that partly vacuumizes with respect to the near zone of the polishing block burnishing surface part of that side of substrate motion.Therefore, the burnishing surface part that produces a large amount of frictional heat can effectively be cooled off, and easily with the temperature maintenance of the substrate retaining part of the burnishing surface of polishing block and substrate holding mechanism in predetermined temperature range.
In substrate polishing apparatus according to the present invention, the substrate retaining part of the burnishing surface of described polishing block and described substrate holding mechanism is by from the room temperature air of room temperature air feeding mechanism or from the cryogenic gas cooling of cryogenic gas feeding mechanism.
As mentioned above, the substrate retaining part of the burnishing surface of polishing block and substrate holding mechanism is by from the room temperature air of room temperature air feeding mechanism or from the cryogenic gas cooling of cryogenic gas feeding mechanism.Therefore, the temperature of the substrate retaining part of the burnishing surface of polishing block and substrate holding mechanism can maintain in 40 ℃ to 65 ℃ scope when substrate polishes, and does not need to change the structure of existing substrate polishing apparatus.
In substrate polishing apparatus according to the present invention, be positioned at the near zone of polishing block by cooling with respect to the polishing block burnishing surface part of that side of substrate motion, realize cooling to the burnishing surface of described polishing block.
As mentioned above, the cooling of the burnishing surface of polishing block is to realize like this, i.e. cooling is positioned at the near zone of polishing block with respect to the polishing block burnishing surface part of that side of substrate motion, just produces the polishing block burnishing surface near zone partly of that side of a large amount of frictional heat.Therefore, the temperature of the burnishing surface of polishing block can maintain in the above-described temperature range.
In substrate polishing apparatus according to the present invention, cryogenic gas is fed to the reverse side of polished substrate from the cryogenic gas feeding mechanism, to cool off described substrate.
As mentioned above, cryogenic gas is fed to the reverse side of polished substrate with the cooling substrate from the cryogenic gas feeding mechanism.Therefore, easily substrate is maintained predetermined temperature.Like this, substrate can stably be polished with desirable flatness and predetermined polishing speed.
In substrate polishing apparatus according to the present invention, described will polished substrate be the substrate of following type, and it has the wiring material film that is formed in the basic unit, and comprises the groove that is formed in the basic unit.Described substrate is polished, only staying the wiring material in the described groove, and removes other wiring material.
As mentioned above, have and be formed on the wiring material film in the basic unit and comprise that the substrate that is formed on the groove in the basic unit is polished, substrate temperature is maintained in 40 ℃ to 65 ℃ scope.Therefore, can stably implement polishing with desirable flatness and predetermined polishing speed, so that wiring material is removed from substrate, the wiring material in groove.
Description of drawings
Fig. 1 is the schematic diagram according to the structure of substrate polishing apparatus of the present invention.
Fig. 2 is the cross-sectional side elevational view according to the structure of substrate holding mechanism of the present invention.
Fig. 3 is the vertical view according to the substrate retaining part of substrate holding mechanism of the present invention.
Fig. 4 a and 4b are the side view in partial cross-section according to substrate holding mechanism of the present invention.
Fig. 5 is the wear rate comparative example figure of various spacing rings.
Fig. 6 is to use the comparative example figure of polishing speed of the polishing process of various spacing rings.
Fig. 7 is to use the comparative example figure of the polishing block burnishing surface variations in temperature of various spacing rings.
Fig. 8 is the schematic diagram according to a kind of structure example of substrate polishing apparatus of the present invention.
Fig. 9 is the schematic diagram according to a kind of structure example of substrate polishing apparatus of the present invention.
Figure 10 is the schematic diagram according to a kind of structure example of substrate polishing apparatus of the present invention.
Figure 11 is traditional substrate polishing process and according to the comparative example figure of substrate polishing process of the present invention.
Figure 12 is traditional substrate polishing process and according to the comparative example figure of substrate polishing process of the present invention.
[description of reference numerals]
1 apical ring
2 mounting flanges
3 spacing rings
4 cushions
5 retaining rings
6 supporting members
7 add laminated sheet
8 center supporters
9 outside supporters
10 universal joints
11 apical ring driving shafts
12 bearing balls
31 to 38 fluid passages
100 polishing blocks
101 polishing pads
102 polishing fluids supply mouth
110 apical ring heads
111 apical ring cylinders
112 rotating cylinders
113 synchronous pulleys
114 apical ring drive motors
115 synchronous belts
116 synchronous pulleys
117 apical ring head axles
120 compressed air sources
121 vacuum sources
131 air supplies
132 cleaning fluid sources of supply
200 polishing blocks
201 polishing pads
202 polishing fluids supply mouth
221 apical rings
222 apical ring driving shafts
230 apical ring bodies
231 substrate guides
232 cryogenic gas runners
234 cryogenic gas discharge-channels
235 aperture adjustable type constant flow control valves
236 check valves
240 vaults
241 intakes
242 outlets
243 outlet conduits
244 cryogenic gas feeding mechanisms
245 space bars
246 pad surface cool devices
The specific embodiment
Embodiments of the invention are described with reference to the accompanying drawings.Fig. 1 is the schematic diagram according to the structure of substrate polishing apparatus of the present invention.As shown in the figure, substrate polishing apparatus has the apical ring as substrate holding mechanism, with and on be combined with the polishing block 100 of polishing pad 101.Polishing pad 101 has a burnishing surface.By apical ring 1 keeping will be polished substrate W, for example wafer is pushed on the surface (burnishing surface) of the polishing pad 101 that is against on the polishing block 100.Rotatablely moving of the burnishing surface 100 of the polishing block that rotatablely moves by the substrate W that kept by apical ring 1, substrate W is polished.In addition, lapping liquid Q is fed on the polishing pad 101 of polishing block 100 from the polishing fluid supply mouth 102 that is located at polishing block 100 and complains to the higher authorities about an injustice and request fair settlement.
Should be understood that, there are various polishing pads to be suitable as polishing pad 101, for example, SUBA800, IC-1000 and the IC-1000/SUBA400 (layer cloth) that can buy from Rodel Inc, and the Surfin xxx-5 and the Surfin 000 that can buy from Fujimi Incorporated.SUBA800, Surfin xxx-5 and Surfin 000 utilize the polyurethane resin viscose fibre and the adhesive-bonded fabric made.IC-1000 is made by hard polyurethane foams (individual layer).Polyurethane foam is a porous, and has a large amount of small ruts or hole in its surface.
In addition, apical ring driving shaft 11 is connecting rotating cylinder 112 by the key (not shown).Rotating cylinder 112 has the synchronous pulley 113 that is positioned at its peripheral part.Apical ring drive motors 114 is fixed on the apical ring head 110.Synchronous pulley 113 is connecting the synchronous pulley 116 that is located on the apical ring drive motors 114 by synchronous belt 115.Like this, after apical ring drive motors 114 started, rotating cylinder 112 and apical ring driving shaft 11 rotated as a unit together by synchronous pulley 116, synchronous belt 115 and synchronous pulley 113, thereby caused apical ring 1 rotation.Should be pointed out that the apical ring head axle 117 that apical ring head 110 is fixedly supported on the framework (not shown) is supporting.
Fig. 2 is the vertical cutaway view according to the structure example of the structure of substrate holding mechanism of the present invention.As shown in the figure, apical ring 1 has mounting flange 2 and the spacing ring 3 that is fixed on the outer peripheral edges lower end of mounting flange 2.Mounting flange 2 is made by metal with high strength and rigidity or ceramic material.Spacing ring 3 is made by having high rigidity resin or ceramic material.In the present embodiment, used the spacing ring 3 that forms by polyimide compound, as described later.
Mounting flange 2 has cylindrical chamber shape housing parts 2a, annular add the inboard that laminated sheet supporting part 2b is assemblied in the cylindrical part of housing parts 2a, the hermetic unit 2c of annular is assemblied in the top of the upside outer peripheral edges of housing parts 2a.Spacing ring 3 is fixed on the lower end of the housing parts 2a of mounting flange 2.The bottom of spacing ring 3 is inwardly outstanding.Should be pointed out that spacing ring 3 and mounting flange 2 can form an overall structure.
Apical ring driving shaft 11 is arranged in the top at center of the housing parts 2a of mounting flange 2.Mounting flange 2 and apical ring driving shaft 11 interconnect by universal joint 10.Universal joint 10 has the spherical bearing structure, so that mounting flange 2 and apical ring driving shaft 11 are tilted in relation to each other, and rotary transfer machine, be delivered to the apical ring body with rotation with apical ring driving shaft 11.Like this, universal joint 10 makes pushing force and revolving force to be delivered to mounting flange 2 from apical ring driving shaft 11, allows them to be tilted in relation to each other again simultaneously.
The spherical bearing structure comprise the lower surface center that is formed on apical ring driving shaft 11 ball recess 11a, be formed on the upper surface center of housing parts 2a ball recess 2d, be built in the bearing ball 12 between groove 11a and the 2d.Bearing ball 12 by high rigidity material for example ceramic material make.Rotary transfer machine comprise the drive pin (not shown) that is fixed on the apical ring driving shaft 11 and be fixed on the housing parts 2a from the untie-sell (not shown).Even mounting flange 2 tilts, can vertically move in the other side toward each other from untie-sell and drive pin, with the contact point of hour offset between them.That is to say drive pin and keep being engaged with each other from untie-sell.Like this, rotary transfer machine can be guaranteed turning moment is delivered to mounting flange 2 from apical ring driving shaft 11.
The inboard of the spacing ring 3 on mounting flange 2 limits a space at mounting flange 2 and overall fixed.This space is holding cushion 4, this cushion abut against by apical ring 1 keeping will be polished substrate W, semiconductor wafer for example; And the retaining ring 5 of annular, it is used from support elastic pad 4 with the supporting member 6 one of dish type roughly.The peripheral part of cushion 4 is maintained at retaining ring 5 and is fixed between the supporting member 6 of retaining ring 5 lower ends.Cushion 4 is covered with the downside of supporting member 6.Like this, a space is formed between cushion 4 and the supporting member 6.
The laminated sheet of being made by elastic membrane 7 that adds is stretched between retaining ring 5 and the mounting flange 2.An end that adds laminated sheet 7 is maintained at the housing parts 2a of mounting flange 2 and adds between the laminated sheet supporting part 2b.The other end that adds laminated sheet 7 is maintained between the upper end 5a and its stopper section 5b of retaining ring 5.In this way, adding laminated sheet 7 is fixed.By mounting flange 2, supporting member 6, retaining ring 5 with add laminated sheet 7 at the inboard pressure chambers 21 that form of mounting flange 2.
Adding laminated sheet 7 is that flexible member is for example under the situation of rubber, if it is fixed by remaining between spacing ring 3 and the mounting flange 2, then, can not obtain desirable plane at spacing ring 3 downsides owing to the strain that adds laminated sheet 7 as flexible member.For fear of this problem, in the present embodiment, add laminated sheet supporting part 2b and be provided, so that remain on housing parts 2a and add between the laminated sheet supporting part 2b and fix it by adding laminated sheet 7 as add ons.
Comprise of the upside outer peripheral edges formation of the runner 51 of annular groove, assembling the hermetic unit 2c of mounting flange 2 on these upside outer peripheral edges near housing parts 2a.Runner 51 communicates with fluid passage 32 by the through hole among the hermetic unit 2c 52.Fluid passage 32 is being connected air supplies 131 by three-way switch valve V3 with adjuster R7, and is connecting cleaning fluid source of supply 132 by transfer valve V3.Like this, by switching three-way transfer valve V3, fluid passage 32 can be by optionally from air supplies 131 supply temperatures control air or temperature control humid air, perhaps from cleaning fluid source of supply 132 supply cleaning fluids (pure water).A plurality of intercommunicating pores 53 are configured to extend through housing parts 2a and add laminated sheet supporting part 2b from runner 51.Intercommunicating pore 53 communicates with the outer surface of cushion 4 and the minim gap G between the spacing ring 3, also communicates with a plurality of through hole 3a in the spacing ring 3.
Be formed on and be provided with center supporter 8 and annular outboard supporter 9 in the space between cushion 4 and the supporting member 6, this center supporter 8 is the supporters that are used to push against cushion 4.In the present embodiment, shown in Fig. 2 and 3, center supporter 8 is arranged in the center of supporting member 6 lower surfaces, and outside supporter 9 is arranged in the outside of center supporter 8.Should be pointed out that cushion 4, center supporter 8 and outside supporter 9 are formed by the elastomeric material with excellent in strength and durability, for example EP rubbers (EPDM), polyurethane rubber or silicone rubber, laminated sheet 7 is the same with adding.
The space that is formed between supporting member 6 and the cushion 4 is divided into a plurality of space segments (second pressure chamber) by center supporter 8 and outside supporter 9.Like this, pressure chamber 22 is formed between center supporter 8 and the outside supporter 9, and pressure chamber 23 is formed on the outside of outside supporter 9.
Shown in Fig. 4 a, center supporter 8 comprises the elastic membrane 81 that abuts against cushion 4 upper surfaces, and the center supporter retaining part 82 that is removably keeping elastic membrane 81.Center supporter retaining part 82 utilizes screw 55 removably to be fixed on the lower surface center of supporting member 6.Center pressure chamber 24 (first pressure chamber) is formed in the center supporter 8 by elastic membrane 81 and center supporter retaining part 82.
Similarly, outside supporter 9 comprises the elastic membrane 91 that abuts against cushion 4 upper surfaces shown in Fig. 4 b, and the outside supporter retaining part 92 that is removably keeping elastic membrane 91.Outside supporter retaining part 92 utilizes screw 56 removably to be fixed on (see figure 2) on the lower surface of supporting member 6.Intermediate pressure cavity 25 (second pressure chamber) is formed in the supporter 9 of the outside by elastic membrane 91 and outside supporter retaining part 92.
The pressure chamber 21 and the pressure chamber 22 to 25 that are positioned at supporting member 6 tops are supplied for example compressed air of compressed fluid by the fluid passage 31,33,34,35 and 36 that communicates with relevant pressure chamber 21 to 25, or are supplied atmospheric pressure or vacuum.As shown in Figure 1, the pressure that is fed to the compressed fluid of each pressure chamber 21 to 25 can be regulated by the adjuster R2 to R6 in the fluid passage 31,33,34,35 and 36 that is arranged in pressure chamber 21 to 25.Like this, the pressure in each pressure chamber 21 to 25 can be controlled independently of each other or change into atmospheric pressure or vacuum.By this independent structure that changes the pressure of each pressure chamber 21 to 25 of adjuster R2 to R6 of utilizing, substrate W that will be polished can regulate at each position of substrate W by the pushing force of cushion 4 pushing polishing pads 101.
As shown in Figure 3, cushion 4 is provided with a plurality of openings 41.Supporting member 6 is provided with the interior all suction retaining parts 61 that extend downwards from it, so that they are exposed in the respective openings 41 between center supporter 8 and the outside supporter 9.In addition, supporting member 6 is provided with the periphery suction retaining part 62 that extends from it downwards, so that they are exposed in the respective openings 41 in supporter 9 outsides, the outside.In the present embodiment, cushion 4 is provided with eight openings 41, and suction retaining part 61 and 62 is configured to be exposed in the corresponding opening 41.
All suction retaining parts 61 are formed with the intercommunicating pore 61a that communicates with fluid passage 37 in each.Each periphery suction retaining part 62 is formed with the intercommunicating pore 62a that communicates with fluid passage 38.In all suction retaining parts 61 and periphery suction retaining part 62 respectively by fluid passage 37 with 38 and valve V1 be connected vacuum source 121, for example vavuum pump with V2.When interior periphery suction retaining part 61 when 62 intercommunicating pore 61a is being connected vacuum source 121 with 62a, negative pressure is formed on the openend of each intercommunicating pore 61a and 62a, and substrate W that therefore will be polished is adsorbed and remains on interior all suction retaining parts 61 and the periphery suction retaining part 62.Should be pointed out that elastic sheet material 61b and 62b (see figure 2), TR thin rubber sheet material for example, periphery suction retaining part 61 and 62 corresponding lower end in being bonded to, substrate W is by on the periphery suction retaining part 61 and 62 in mildly absorption remains on.
In the apical ring 1 that is positioned to substrate holding mechanism as mentioned above, when substrate W will be transmitted, whole apical ring 1 is positioned in the delivering position of substrate W, and interior periphery suction retaining part 61 with 38 is being connected vacuum source 121 with 62a by fluid passage 37 with 62 intercommunicating pore 61a.The suction that utilization applies by intercommunicating pore 61a and 62a, substrate W are adsorbed on the lower surface that remains on interior periphery suction retaining part 61 and 62.In this state, apical ring 1 is moved, and whole apical ring 1 is positioned in polishing block 100 tops.The limited ring 3 of outer peripheral edges that should be pointed out that substrate W keeps, to prevent that substrate W is from apical ring 1 slippage.
When substrate W will be polished, substrate W was kept removing by the absorption of suction retaining part 61 and 62, and substrate W is maintained at the downside of apical ring 1.In addition, the apical ring cylinder 111 that is connecting apical ring driving shaft 11 is activated, with the spacing ring 3 that will be fixed on apical ring 1 lower end with predetermined pushing force pushing and pressing on the surface of the polishing pad 101 of polishing block 100.In this state, the fluid that is pressurized to predetermined pressure is supplied to each pressure chamber 22 to 25 (being pressure chamber 22 and 23, center pressure chamber 24, and intermediate pressure cavity 25), so that substrate W is pushed against on the burnishing surface 100 of polishing block.In addition, lapping liquid Q is supplied from polishing fluid supply mouth 102.Therefore, lapping liquid Q is retained on the polishing pad 101.Like this, can implement polishing in the following manner, promptly lapping liquid Q is present between the surface (lower surface) that polishing pad 101 and substrate W will be polished.
Utilization is fed to the pressure of the compressed fluid of pressure chamber 22 and 23, the surface that is positioned at the each several parts pushings polishing pad 101 below pressure chamber 22 and 23 of substrate W.The pressure that elastic membrane 81 and the cushion 4 of utilization by center supporter 8 is fed to the compressed fluid in center pressure chamber 24, substrate W is positioned at part pushing burnishing surface below the 24A of center pressure chamber.The pressure that elastic membrane 91 and the cushion 4 of utilization by outside supporter 9 is fed to the compressed fluid of intermediate pressure cavity 25, substrate W is positioned at parts pushing burnishing surface below the intermediate pressure cavity 25.
Like this, be fed to the pressure of the compressed fluid of each pressure chamber 22 to 25 by control, the polish pressure that is applied on the polished substrate W can be regulated at each part of substrate W.That is to say that the pressure that is fed to the compressed fluid of each pressure chamber 22 to 25 is regulated independently of one another by adjuster R3 to R6.Like this, can regulate pushing force on the polishing pad 101 that substrate W press against polishing block 100 for each part of substrate W.
By as mentioned above independently of one another control be fed to the pressure of compressed fluid of each pressure chamber 22 to 25, can be with in the partitioning portion (seeing zone C 1, C2, C3 and C4 among Fig. 3) of four circular concentric of pushing force pushing substrate W independent of each other and annular each.Polishing speed depends on the pressure of substrate W pushing burnishing surface.In this, because the pushing force that is applied in four parts of substrate W each can be controlled, therefore can control the polishing speed of each part of substrate W independently of one another.
In the polishing of substrate W, the polishing pad 101 of spacing ring 3 and substrate W pushing polishing block 100, thus cause that frictional heat produces.Frictional heat causes substrate retaining part 1 distortion of apical ring and therefore reduces the polishing ability.Frictional heat also causes the surface temperature of polishing pad 101 to raise.Therefore, in the present embodiment, runner 26, just as illustrated in fig. 1 and 2 by housing parts 2a, spacing ring 3, the retaining ring 5 of mounting flange 2 with add laminated sheet 7 circumjacent runners, controlled air by transfer valve V3, fluid passage 32, through hole 52, runner 51 and intercommunicating pore 53 from air supplies 131 supply temperatures, cooled off the contacted housing parts 2a of air, spacing ring 3 and retaining ring 5 thus effectively with the runner 26 of flowing through.
Pressure in the runner 26 is configured to be equal to or less than the pressure in the pressure chamber 22 to 25.Like this, can not influence the polishing speed of substrate W by runner 26 supply temperatures control air.
In addition, outer surface and minim gap G spacing ring 3 between and by be located at a plurality of through hole 3as in spacing ring 3 be injected in the burnishing surface of polishing pad 101 of polishing block 100 on of temperature controlled air in the runner 26 by cushion 4, thereby burnishing surface is effectively cooled off.By from air supplies 131 supply temperatures control humid air, can cool off the mounting flange 2 and the spacing ring 3 of apical ring 1, meanwhile, prevent their dry tack free.Therefore, can prevent lapping liquid Q and the adhesion of polishing chip and dry on the surface of mounting flange 2 or spacing ring 3.The supply that should be pointed out that humid air is not limited in the polishing process.
Can also clean the burnishing surface of the polishing pad 101 of apical ring 1 and polishing block 100 in the following manner, promptly switching three-way transfer valve V3 supplies cleaning fluids so that pass through fluid passage 32, through hole 52, runner 51 and intercommunicating pore 53 from cleaning fluid source of supply 132.
Polyimide compound can be used as the constituent material of spacing ring 3, as mentioned above.By the experiment that the present inventor carried out, now confirm, situation when using polyphenylene sulfide (PPS) for example or polyether-ether-ketone (PEEK) is compared, polyimide compound as the constituent material of spacing ring 3, can be obtained more excellent effect at the polishing speed of the wear rate of spacing ring 3, polished substrate, the aspects such as surface temperature of polishing pad.
Fig. 5 is the spacing ring 3 wear rate comparative example figure when adopting various spacing ring material, and described material is the Vespel (registration mark as polyimide compound; CR4610, SP-1, and SCP5000), polyphenylene sulfide (PPS) and polyether-ether-ketone (PEEK).Be appreciated that from figure and work as Vespel (CR4610, SP-1, and SCP5000) when being used as the constituent material of spacing ring 3, wear rate is lower than the situation when using other material, particularly polyphenylene sulfide (PPS).
The comparative example figure of the substrate W polishing speed when Fig. 6 is to use various spacing ring material, described material is Vespel (CR4610, SP-1, and SCP5000), polyphenylene sulfide (PPS) and polyether-ether-ketone (PEEK) as polyimide compound.From figure, be appreciated that, as Vespel (CR4610, SP-1, when and SCP5000) being used as the constituent material of spacing ring 3, the polishing speed of the marginal portion of substrate W is suppressed, and when polyphenylene sulfide (PPS) or polyether-ether-ketone (PEEK) when being used, the polishing speed of the marginal portion of substrate W increases undesirablely, thereby causes the edge of substrate W to sink.
The pad interface temperature raise and the comparative example figure that concerns between the polishing time that passes through when Fig. 7 was to use various spacing ring material.Described material is Vespel (CR4610, SP-1, and SCP5000), polyphenylene sulfide (PPS) and polyether-ether-ketone (PEEK) as polyimide compound.Be appreciated that from figure and work as Vespel (CR4610, SP-1, and SCP5000) when being used as the constituent material of spacing ring 3, the surface temperature of polishing pad is lower than the situation when using polyphenylene sulfide (PPS) or polyether-ether-ketone (PEEK).
Should be pointed out that the apical ring that is arranged to substrate holding mechanism as mentioned above only is an example, substrate holding mechanism according to the present invention is not limited thereto.Important part only is, substrate holding mechanism has mounting flange, be fixed on the supporting member on the mounting flange and be fixed on spacing ring on the mounting flange, will polished substrate remaining on downside by the cingens supporting member of spacing ring, and with the substrate pushing and pressing on burnishing surface.The ad hoc structure of substrate holding mechanism is unimportant.
Substrate polishing apparatus is not limited to have above-described structure.Important part only is, substrate polishing apparatus has substrate holding mechanism and has the polishing block of burnishing surface, and be arranged such that by will being urged on the burnishing surface of polishing block by polished substrate that substrate holding mechanism is keeping, and substrate is by the relative motion between the burnishing surface of the substrate that kept by substrate holding mechanism and polishing block and polished.The ad hoc structure of substrate polishing apparatus is unimportant.
Fig. 8 is the schematic diagram according to a kind of structure example of substrate polishing apparatus of the present invention.In Fig. 8, polishing block 200 is rotated in the direction of arrow A with the form of plane motion.Polishing block 200 is made by smooth hard material, and has the polishing pad 201 that is combined in its top.Apical ring 221 its downside keeping will be polished substrate W, semiconductor chip for example.Apical ring 221 is being driven rotation in the direction of arrow B by apical ring driving shaft 222.When rotated, apical ring 221 will remain on the substrate W pushing and pressing of its downside (being that apical ring 221 contacts substrate W with the upper surface of polishing pad 201 under pressure) on the upper surface of the polishing pad on the polishing block 200 201.In addition, lapping liquid Q supplies mouth 202 rationinies (drippage) to the upper surface of polishing pad 201 from polishing fluid, and is supplied between the upper surface of polishing pad 201 and the lower surface of substrate W (surface that will be polished).
The vault 240 that is covered with polishing pad 201 and apical ring 221 is provided with intake 241 and outlet 242.Outlet 242 is connecting outlet conduit 243.After the vacuum extractor in the vault 240 was activated, air-flow was guided into outlet 242 from intake 241, as shown by arrow C, was arranged in the polishing pad 201 and the apical ring 221 of gas stream flow channel with cooling.Cryogenic gas feeding mechanism 244 supply cryogenic gas, for example Cryogenic air or other gases.By vacuumizing under the air-flow the introduced situation not enough to the cooling effect of polishing pad 201 and apical ring 221, cryogenic gas is by from intake 241 supplies, with auxiliary cooling.
Space bar 245 is located in the vault 240.When thereby substrate W that the apical ring 221 that is rotated is keeping is urged on the polishing pad 201 that is being positioned on the polishing block 200 as mentioned above polishing substrate W, space bar 245 control air-flows are so that be arranged in gas stream flow channel as the surface of the part adjacent with apical ring 221 of the apical ring 221 of pyrotoxin and polishing pad 201.
According to above-described substrate polishing apparatus, the surface of polishing pad 201 and apical ring 221 are cooled off in the following manner, promptly implement direct gas cooled from polishing pad 201 tops, or except direct gas cooled, also carry out from the auxiliary cooling of the cryogenic gas of cryogenic gas feeding mechanism 244 supplies, therefore, the surface of polishing pad 201 and apical ring 221 can effectively be cooled off, do not need significantly to change the system architecture of existing substrate polishing apparatus, only need to add vault 240 to existing substrate polishing apparatus simply with intake 241 and outlet 242, outlet conduit 243, space bar 245 and vacuum extractor or cryogenic gas feeding mechanism 244 etc.
Fig. 9 is the schematic diagram according to a kind of structure example of substrate polishing apparatus of the present invention.Substrate polishing apparatus shown in Figure 9 is identical with shown in Fig. 8 in the following areas: equipment has by smooth hard material to be made and the polishing block 200 of rotation in the direction of arrow A, Xuan Zhuan apical ring 221 in the direction of arrow B, and to the polishing fluid supply mouth 202 of the surperficial rationing lapping liquid Q of polishing pad 201.Remaining in the direction of arrow B, the substrate W of the downside of the apical ring 221 of rotation presses against on the upper surface of the polishing pad 201 on the polishing block 200 that is positioned at rotation in the direction of arrow A, lapping liquid Q is metered on the upper surface of polishing pad 201 from polishing fluid supply mouth 202 simultaneously, thus polishing substrate W.
Substrate polishing apparatus shown in Figure 9 has pad surface cool device 246, the surface (upper surface) that is used to cool off polishing pad 201.The room temperature air feeding mechanism that can comprise supply room warm air or room temperature air as the example of pad surface cool device 246, for example fan, and the cryogenic gas feeding mechanism of supply Cryogenic air or cryogenic gas.
According to above-described substrate polishing apparatus, the surface of polishing pad 201 and apical ring 221 are cooled off in the following manner, promptly from filling up surface cool device 246 supply room temperature air or cryogenic gas to implement directly cooling from polishing pad 201 tops.Therefore, the surface of polishing pad 201 and apical ring 221 can effectively be cooled off, and do not need significantly to change the system architecture of existing substrate polishing apparatus (structure), only need to add pad surface cool device 246 to traditional structure simply.
Figure 10 is the schematic diagram according to a kind of structure example of substrate polishing apparatus of the present invention.The following aspect of substrate polishing apparatus shown in Figure 10 identical with shown in Fig. 8 and 9: equipment has by smooth hard material to be made and the polishing block 200 of rotation in the direction of arrow A, Xuan Zhuan apical ring 221 in the direction of arrow B, and to the polishing fluid supply mouth 202 of the surperficial rationing lapping liquid Q of polishing pad 201.Remaining in the direction of arrow B, the substrate W of the downside of the apical ring 221 of rotation presses against on the upper surface of the polishing pad 201 on the polishing block 200 that is positioned at rotation in the direction of arrow A, lapping liquid Q is metered on the upper surface of polishing pad 201 from polishing fluid supply mouth 202 simultaneously, thus polishing substrate W.
Cryogenic gas discharge-channel 234 is provided with aperture adjustable type constant flow control valve 235, be used for cryogenic gas D with constant flow velocity supply, thereby cryogenic gas D can not stagnate at the reverse side of substrate W in the polishing of substrate W.Aperture adjustable type constant flow control valve 235 is also controlled the flow velocity of cryogenic gas D at the reverse side of substrate W.In addition, check valve 236 is located in the cryogenic gas discharge-channel 234, like this, when the suction function that is produced from cryogenic gas runner 232 suction cryogenic gas D by starting vacuum extractor remains on the downside of apical ring body 230 with substrate W absorption, can prevent that gas from refluxing from cryogenic gas discharge-channel 234.
As mentioned above, substrate polishing apparatus is by directly supplying surface and the apical ring 221 that cryogenic gas D cools off polishing pad 201 to the reverse side of substrate W.Therefore, substrate W can effectively be cooled off.
Describe the method for the substrate polishing apparatus polishing substrate W of structure as shown in Figure 8 of using below in detail.When the lapping liquid Q that contains abrasive grains is metered into the upper surface of the polishing pad 201 on the polishing block 200 of rotation from polishing fluid supply mouth 202, the substrate W that is being kept by the apical ring 221 that rotates is urged on the upper surface of polishing pad 201, thus the surface of polishing substrate W.At this moment, the inboard that is covered with the vault 240 of polishing pad 201 and apical ring 221 is partly vacuumized, to produce the air-flow that points to outlet 242 and outlet conduit 243 from intake 241.Air communication super-interval plate 245 and by ACTIVE CONTROL, so that polishing pad 201 and apical ring 221 are arranged in gas stream flow channel, the temperature maintenance of guaranteeing the surface temperature of polishing pad 201 in the polishing of substrate W and substrate W thus is in 40 ℃ to 65 ℃ scope.
Say that especially because a large amount of relative motions between polishing pad 201 and the substrate W, polishing pad 201 is in the upper surface portion generation a large amount of frictional heat of polishing pad 201 with respect to a side (polishing block 200 1 sides) of substrate W motion.Therefore, by space bar 245 control air-flows, so that the near zone of this part of polishing pad 201 is arranged in gas stream flow channel.In this way, the temperature of the surface temperature of polishing pad 201 and substrate W can maintain in 40 ℃ to 65 ℃ scope.
Describe the method for the substrate polishing apparatus polishing substrate W of structure as shown in Figure 9 of using below in detail.When the lapping liquid Q that contains abrasive grains is metered into the upper surface of the polishing pad 201 on the polishing block 200 of rotation from polishing fluid supply mouth 202, the substrate W that is being kept by the apical ring 221 that rotates is urged on the upper surface of polishing pad 201, thus the surface of polishing substrate W.At this moment, room temperature air or cryogenic gas E are fed to the cooling point 201a on the polishing pad 201 from the pad surface cool device of installing near apical ring 221 246, the temperature maintenance of guaranteeing the surface temperature of polishing pad 201 and substrate W thus is in 40 ℃ to 65 ℃ scope.
Say that especially because a large amount of relative motions between polishing pad 201 and the substrate W, polishing pad 201 is in the upper surface portion generation a large amount of frictional heat of polishing pad 201 with respect to a side (polishing block 200 1 sides) of substrate W motion, as mentioned above.Therefore, by supplying room temperature air or cryogenic gas from the cooling point 201a of pad surface cool device 246 to the near zone of the above-mentioned part of polishing pad 201, the temperature of the surface temperature of polishing pad 201 and substrate W can maintain in 40 ℃ to 65 ℃ scope.
Describe the method for the substrate polishing apparatus polishing substrate W of structure as shown in figure 10 of using below in detail.When the lapping liquid Q that contains abrasive grains is metered into the upper surface of the polishing pad 201 on the polishing block 200 of rotation from polishing fluid supply mouth 202, the substrate W that is being kept by the apical ring 221 that rotates is urged on the upper surface of polishing pad 201, thus the surface of polishing substrate W.At this moment, cryogenic gas D is supplied to the reverse side of substrate W, and can guarantee the almost constant flow rate of cryogenic gas D by aperture adjustable type constant flow control valve 235, can not stagnate at the reverse side of substrate W so that be fed to the cryogenic gas D of the reverse side of substrate W.In addition, control the flow velocity of cryogenic gas D by the aperture of regulating aperture adjustable type constant flow control valve 235.Like this, the temperature of the surface temperature of polishing pad 201 and substrate W can maintain in 40 ℃ to 65 ℃ scope in the polishing of substrate W.
In order to transmit substrate W after polishing, the cryogenic gas D in the cryogenic gas runner 232 is evacuated the device suction to produce negative pressure, makes substrate W can be maintained at the downside of apical ring body 230 thus.Because check valve 236 is located in the cryogenic gas discharge-channel 234, so gas can not be back to the reverse side of substrate W.Therefore, substrate W can be adsorbed the downside that remains on apical ring body 230 securely.
Figure 11 is to use traditional substrate polishing apparatus to carry out the substrate polishing and uses the comparative example figure that carries out the substrate polishing according to substrate polishing apparatus of the present invention.In Figure 11, transverse axis represent pad interface temperature in the polishing process (℃) and substrate temperature (℃).The left side longitudinal axis is represented polishing speed, residual residual step (residual step) on the right side longitudinal axis representative polishing meron surface.Should be pointed out that the lapping liquid that the substrate polishing process uses is with the lapping liquid of high molecular weight surface activating agent as main component.As shown in figure 11, in the polishing process that utilizes traditional substrate polishing apparatus to carry out, pad interface temperature and substrate temperature are positioned at warm area A (65 ℃ or more than), and along with temperature raises, polishing speed reduces, and the size of residual step increases.In utilizing the polishing process carry out according to substrate polishing apparatus of the present invention, pad interface temperature and substrate temperature are positioned at warm area B (40 ℃ to 65 ℃), can obtain high polishing speed, and residual step size is less ideally.
Figure 12 is traditional substrate polishing and according to the comparative example figure of substrate polishing of the present invention, in the finishing method that they adopt, substrate has the wiring material film that is formed on the substrate surface, and comprise the groove that is used for forming wiring at substrate surface, this substrate is polished, only staying the wiring material in the wafer pockets, and remove other wiring material.In Figure 12, transverse axis is represented in polishing time (second) polishing process, the cutting output (material removal amount) of longitudinal axis representative polishing.As shown in figure 12, in the polishing process that utilizes traditional substrate polishing apparatus to carry out, pad interface temperature and substrate temperature are positioned at warm area A, the disproportionate relation of polishing time and cutting output, but along with the process of polishing time, cutting output is index to be increased.On the contrary, in utilizing the polishing process that carries out according to substrate polishing apparatus of the present invention, pad interface temperature and substrate temperature are positioned at warm area B, the proportional relation of polishing time and cutting output.
Therefore, in order to obtain desirable cutting output, be difficult to carry out cutting output control or utilize the polishing endpoint checkout gear to carry out cutting output control based on polishing time at traditional warm area.In addition, the repeatability of traditional finishing method is poor.In utilizing the finishing method that carries out according to substrate polishing apparatus of the present invention, pad interface temperature and substrate temperature are positioned at warm area B (40 ℃ to 65 ℃), the proportional relation of polishing time and cutting output.Therefore,, carry out cutting output control based on polishing time easily, and use the polishing endpoint checkout gear to carry out cutting output control easily in order to obtain desirable cutting output.In addition, can obtain excellent repeatability.
As mentioned above, in the finishing method of the convex-concave position leveling that will be formed on the material layer on the substrate surface by polishing, and be formed in the finishing method that comprises reeded on-chip wiring material (the wiring material in groove) removing by polishing, the surface temperature of polishing pad and substrate temperature preferably remain in 40 ℃ to 65 ℃ scope in polishing process, particularly preferably remain in 45 ℃ to 60 ℃ scope.
As previously mentioned, the present invention can control the temperature of spacing ring, burnishing surface and substrate holding mechanism efficiently, therefore can improve the polishing performance at aspects such as polishing speed, polishing uniformities.
Claims (3)
1. substrate polishing apparatus, wherein, by will being urged on the burnishing surface of polishing block by polished substrate that substrate holding mechanism is keeping, polishing fluid is supplied on the described burnishing surface simultaneously, and described substrate is polished by the relative motion between substrate and the burnishing surface;
Wherein, in the polishing process of described substrate, the temperature of described substrate is maintained in 40 ℃ to 65 ℃ scope;
The vault that the substrate retaining part of the burnishing surface of described polishing block and substrate holding mechanism is had intake and outlet covers, utilization by to the inside part of described vault vacuumize the air-flow that produces and from the cryogenic gas of cryogenic gas feeding mechanism supply, the substrate retaining part of the burnishing surface of described polishing block and described substrate holding mechanism is cooled.
2. substrate polishing apparatus according to claim 1, it is characterized in that, be arranged in polishing block and be positioned in by described with respect to the near zone of the polishing block burnishing surface part of that side of substrate motion and partly vacuumize being used to of producing and cool off the gas stream flow channel of the substrate retaining part of described burnishing surface and described substrate holding mechanism.
3. substrate polishing apparatus according to claim 1 is characterized in that, in the polishing process of described substrate, the temperature of the burnishing surface of described polishing block also is maintained in 40 ℃ to 65 ℃ scope.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
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| JP380583/2002 | 2002-12-27 | ||
| JP2002380583 | 2002-12-27 | ||
| JP188775/2003 | 2003-06-30 |
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| Application Number | Title | Priority Date | Filing Date |
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| CNA2008101255002A Division CN101306512A (en) | 2002-12-27 | 2003-12-26 | Substrate polishing apparatus |
| CN200910211501A Division CN101693354A (en) | 2002-12-27 | 2003-12-26 | Substrate polishing apparatus |
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| CN1732068A CN1732068A (en) | 2006-02-08 |
| CN100566938C true CN100566938C (en) | 2009-12-09 |
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| CNB200380107815XA Expired - Lifetime CN100566938C (en) | 2002-12-27 | 2003-12-26 | Substrate polishing apparatus |
| CNA2008101255002A Pending CN101306512A (en) | 2002-12-27 | 2003-12-26 | Substrate polishing apparatus |
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| CNA2008101255002A Pending CN101306512A (en) | 2002-12-27 | 2003-12-26 | Substrate polishing apparatus |
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| CN101990702B (en) * | 2008-04-09 | 2013-06-19 | 应用材料公司 | Polishing system having track |
| DE102009052070A1 (en) * | 2009-11-05 | 2011-05-12 | Peter Wolters Gmbh | Apparatus and method for double side machining of flat workpieces |
| KR101504221B1 (en) * | 2010-08-02 | 2015-03-20 | 주식회사 엘지화학 | Large scale plate and method for uniform polishing of the same |
| CN102672551A (en) * | 2012-05-22 | 2012-09-19 | 江南大学 | Ultrasonic atomization type polishing machine |
| CN107192369B (en) * | 2017-06-08 | 2020-04-10 | 河南职业技术学院 | Automatic change equipment |
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|---|---|---|---|---|
| US3611654A (en) * | 1969-09-30 | 1971-10-12 | Alliance Tool & Die Corp | Polishing machine or similar abrading apparatus |
| US5645474A (en) * | 1995-11-30 | 1997-07-08 | Rodel Nitta Company | Workpiece retaining device and method for producing the same |
| US5762544A (en) * | 1995-10-27 | 1998-06-09 | Applied Materials, Inc. | Carrier head design for a chemical mechanical polishing apparatus |
| EP1075897A1 (en) * | 1999-08-10 | 2001-02-14 | Peter Wolters, Werkzeugmaschinen GmbH | Lapping machine with two plates |
| US6273803B1 (en) * | 1998-09-08 | 2001-08-14 | Speedfam Co., Ltd. | Carriers and polishing apparatus |
| US20020042246A1 (en) * | 2000-10-11 | 2002-04-11 | Tetsuji Togawa | Substrate holding apparatus |
| US6468136B1 (en) * | 2000-06-30 | 2002-10-22 | Applied Materials, Inc. | Tungsten CMP with improved alignment mark integrity, reduced edge residue, and reduced retainer ring notching |
| US20020187728A1 (en) * | 2000-01-31 | 2002-12-12 | Etsuo Kiuchi | Polishing device and method |
| US20020193050A1 (en) * | 2000-12-22 | 2002-12-19 | Sujit Sharan | Apparatus for enhanced rate chemcial mechanical polishing with adjustable selectivity |
-
2003
- 2003-12-26 CN CNB200380107815XA patent/CN100566938C/en not_active Expired - Lifetime
- 2003-12-26 CN CNA2008101255002A patent/CN101306512A/en active Pending
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3611654A (en) * | 1969-09-30 | 1971-10-12 | Alliance Tool & Die Corp | Polishing machine or similar abrading apparatus |
| US5762544A (en) * | 1995-10-27 | 1998-06-09 | Applied Materials, Inc. | Carrier head design for a chemical mechanical polishing apparatus |
| US5645474A (en) * | 1995-11-30 | 1997-07-08 | Rodel Nitta Company | Workpiece retaining device and method for producing the same |
| US6273803B1 (en) * | 1998-09-08 | 2001-08-14 | Speedfam Co., Ltd. | Carriers and polishing apparatus |
| EP1075897A1 (en) * | 1999-08-10 | 2001-02-14 | Peter Wolters, Werkzeugmaschinen GmbH | Lapping machine with two plates |
| US20020187728A1 (en) * | 2000-01-31 | 2002-12-12 | Etsuo Kiuchi | Polishing device and method |
| US6468136B1 (en) * | 2000-06-30 | 2002-10-22 | Applied Materials, Inc. | Tungsten CMP with improved alignment mark integrity, reduced edge residue, and reduced retainer ring notching |
| US20020042246A1 (en) * | 2000-10-11 | 2002-04-11 | Tetsuji Togawa | Substrate holding apparatus |
| US20020193050A1 (en) * | 2000-12-22 | 2002-12-19 | Sujit Sharan | Apparatus for enhanced rate chemcial mechanical polishing with adjustable selectivity |
Also Published As
| Publication number | Publication date |
|---|---|
| CN1732068A (en) | 2006-02-08 |
| CN101306512A (en) | 2008-11-19 |
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