CN100565699C - The data access method of magnetic storage - Google Patents
The data access method of magnetic storage Download PDFInfo
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- CN100565699C CN100565699C CNB2006100795004A CN200610079500A CN100565699C CN 100565699 C CN100565699 C CN 100565699C CN B2006100795004 A CNB2006100795004 A CN B2006100795004A CN 200610079500 A CN200610079500 A CN 200610079500A CN 100565699 C CN100565699 C CN 100565699C
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Abstract
A kind of data access method of magnetic storage comes the access data with the bifurcation pattern.Utilize the first electric current line and the second electric current line so that operating current to be provided.Data access method comprises that one changes data manipulation, to change a storage data of magnetic storage element.In a phase one, an electric current that applies a first direction is simultaneously given this first electric current line, and gives this second electric current line at an electric current of this first direction.Stage before stopping to apply the magnetic field that produces by this first electric current line and this second electric current line, an electric current that applies this first direction is simultaneously given this first electric current line, and gives this second electric current line to offset this bias voltage magnetic field of at least one part at an electric current of this first direction.
Description
Technical field
The invention relates to a kind of magnetic storage magnetic storage technology, and particularly relevant for a kind of accessing operation (access operation) of magnetic storage element, can under low operating current, accurately read and the storage data that changes the magnetic storage element.
Background technology
Magnetic storage, for example (Magnetic Random AccessMemory also is a kind of non-volatility memorizer MRAM) to magnetic RAM, and advantages such as non-volatile, highly dense intensity, high read or write speed, radioresistance line are arranged.Be to utilize the adjacent magnetization vector of the magnetisable material of insulation course then of wearing, owing to parallel or antiparallel size of arranging the magneto-resistor that produces writes down 0 or 1 data.When writing data, general employed method is two electric current lines, for example bit line (Bit Line, BL) and write character line (Write Word Line, WWL) the induced magnetism place magnetic storage element that occurs simultaneously and to choose by changing free layer magnetization vector direction, is changed its magnetoelectricity resistance.And reading when storing data, allow the magnetic storage element inflow current of choosing, can judge the digital value that stores data from the resistance value that reads.
Fig. 1 illustrates the basic structure of a magnetic storage element.Consulting Fig. 1, access one magnetic storage element, also is the electric current line 100,102 that needs intersection and feed suitable electric current, and it for example is called character line and bit line again according to the mode of operation.After feeding electric current, two leads can produce the magnetic field of two directions, to obtain desired magnetic field size and direction, to be applied on the magnetic storage element 104.Magnetic storage element 104 is rhythmo structure, comprises that a magnetic fixed bed (magnetic pinned layer) has fixing magnetization vector (magnetization) at a predetermined direction, or total magnetic is apart from (totalmagnetic moment).Utilize the size of magnetic resistance, read data.By output electrode 106,108, can read the data that this storage element is deposited again.About the details of operation of magnetic storage, be that general ripe this operator can understand, do not continue to describe.
Fig. 2 illustrates the storage mechanism of magnetic storage.In Fig. 2, magnetic fixed bed 104a has fixing magnetic apart from direction 107.Magnetic free layer 104c is positioned at magnetic fixed bed 104a top, is isolated by an insulation course 104b in the middle of it.Magnetic free layer 104c has a magnetic apart from direction 108a or 108b.Because magnetic is parallel apart from direction 108a with magnetic apart from direction 107, the magnetic resistance of its generation is for example represented the data of " 0 ", and apart from direction 108b antiparallel, the magnetic resistance of its generation is for example represented the data of " 1 " to anti-magnetic apart from direction 107 and magnetic.
For a magnetic storage element, the relation of its magneto-resistor (R) and magnetic field H size, as shown in Figure 3.Solid line is represented the magnetic resistance line of single magnetic storage element.Yet magnetic storage can comprise a plurality of storage elements, and the upset field size of its each storage element can be variant, so the magneto-resistor curve can be just like the variation of dotted line, and this can cause access errors.Fig. 4 illustrates the structure of arrays of traditional storage element.The left figure of Fig. 4 is a structure of arrays, for example by applying two direction magnetic field H x, Hy, storage element 140 is write data.Right figure is the star-plot (Asteroid curve) of free layer.In the solid line zone,, can not change the direction of storage element 140 magnetization vectors because magnetic field is little.And the magnetic field in the extra-regional limited area of solid line can be suitable for the operation of magnetic field upset.If magnetic field will interfere with contiguous unit too greatly, also be to be not suitable for using.Therefore, generally with the magnetic field of operating area 144 as magnetic manipulation field.Yet because other storage element 142 also can be experienced the magnetic field that applies, and because the operating conditions of contiguous storage element 142 changes, this magnetic field that applies also may change storing data of other storage element 142.Therefore, as the free layer 104c of the individual layer of Fig. 2, have the possibility of access errors.
At problem such as above-mentioned, for example United States Patent (USP) the 6th, 545, No. 906, in order to reduce the interference cases of adjacent unit when writing data, free layer replaces the individual layer ferromagnetic material with the free lamination 166 of a magnetic of ferromagnetic (FM)/nonmagnetic metal (M)/ferromagnetic (FM) three-decker, as shown in Figure 5, at non-magnetic metal layer 152 bilevel ferromagnetic metal layers 150,154,, form the magnetic line of force of sealing with arranged anti-parallel.Magnetic below is lamination 168 fixedly, by one wear the tunnel insulation course (tunnelbarrier layer, T) 156, separate with the free lamination 166 of magnetic.Magnetic fixedly lamination 168 comprises fixed bed on (top pinned layer, TP) 158, one non-magnetic metal layer 160 and once fixed bed (bottom pinned layer, BP) 162.At last fixed bed and following fixed bed fixing magnetization vector is arranged.Also having a basic unit 164 in addition in the bottom, for example is inverse ferric magnetosphere.
The free lamination 166 of magnetic at three-decker, the incorgruous axle of the magnetic of the relative free lamination 166 of first writing line (magnetic anisotropic axis) with second writing line, make the angle of 45 degree, the incorgruous direction of principal axis in its magnetic field is exactly so-called easy axle (easy axis) direction.So, first writing line and second writing line can be respectively to free laminations 166, according to a precedence relationship, apply with easy axle clamp angle be the magnetic fields of 45 degree, to rotate the magnetization vector of free lamination 166.Fig. 6 illustrates the sequential that magnetic field applies.In Fig. 6, the relative direction of last figure easy axle of expression (shown in the double-head arrow) and magnetic direction.Figure below is the sequential that applies electric current for first writing line and second writing line.Electric current wherein
Representative conference produces the magnetic field of the positive 45 degree directions of phase commute axle, promptly is the Z-axis of last figure, electric current
Representative conference produces the magnetic field of the negative 45 degree directions of phase commute axle, promptly is the transverse axis of last figure.According to the sequential that applies electric current, the direction of magnetization of two ferromagnetic layers 150,154 up and down of then free lamination 166 can be overturn.This sequential that applies electric current is to be reached by two states, therefore is also referred to as bifurcation pattern (togglemode) operation.Every bifurcation pattern operation through once, the direction of magnetization of the magnetosphere of disome up and down 150,154 of free lamination 166 can be reversed once.Because the magnetization vector direction of last fixed bed 158 is fixed, can be parallel or be antiparallel to the magnetization vector direction of fixed bed 158 in the magnetization vector direction of ferromagnetic layer 154 down, therefore can store a scale-of-two (binary) data.
Fig. 7 illustrates in the magnetization vector of two ferromagnetic layers 150,154 up and down of free lamination 166 and the reaction of externally-applied magnetic field size.Consult Fig. 7, in the situation of (a), thin arrow is represented the direction of the magnetization vector of two ferromagnetic layers 150,154 up and down of free lamination 166.In the situation of (b), when the little situation of externally-applied magnetic field H (thick arrow), the direction of two magnetization vectors can not be changed.When externally-applied magnetic field H increases to appropriate value, the direction of two magnetization vectors can reach an equilibrium state in magnetic field H, therefore have a subtended angle, the magnetic field range of this moment is exactly the biconditional operation zone under the bifurcation pattern, the rotation of its magnetization vector, be the magnetic field that utilizes orthogonal two directions, according to the variation (referring to Fig. 6) of a specific time sequence.Therefore magnetization vector is that mode with the stage is reversed.Yet if magnetic field H is too big, the direction of two magnetization vectors just is directed to the direction identical with magnetic field H always, and this is not suitable operating area.
Fig. 8 illustrates the magnetic field that operating current produced by Fig. 6, is applied to the flip-flop mechanism on the storage element.Consult Fig. 8, at period t0, do not apply magnetic field, therefore two magnetization vectors on two free layers are antiparallels.At period t1, a magnetic field H 1, with easy axis direction be separated by 45 the degree directions put on free lamination.At this moment, two magnetization vectors are rotated according to the magnetic direction that applies.At period t2, apply the magnetic field of H2 simultaneously.The magnetic direction of this H2 is-45 degree directions with respect to easy axis direction.Therefore, if the equal and opposite in direction in two magnetic fields, the direction of total magnetic field can be at easy axis direction.At this moment, two magnetization vectors are rotated once again.Then, at period t3, stop to apply magnetic field H 1.At this moment, the total magnetic field is to be provided by magnetic field H 2, and therefore two magnetization vectors are rotated once again.Be noted that two magnetization vectors at period t3, relative one is inverted haply.So at period t4, when the external magnetic field disappeared, two magnetization vectors were got back to easy axis direction with antiparallel state, two magnetization vectors like this are reversed.
Fig. 9 illustrates the respective operations zone of relative externally-applied magnetic field.Consult Fig. 9, at the biconditional operation pattern of Fig. 8, corresponding operating area classification on the coordinate of magnetic field is to belong to bifurcation zone 97.Other also has not Zone switched 92 and direct regional 95.Directly zone 95 are positions not Zone switched 92 with bifurcation zone 97 between, its details does not continue description at this.
Prior art United States Patent (USP) the 6th, 633,498 proposes to reduce the design of magnetic manipulation field.Figure 10 illustrates the design diagram of reduction magnetic manipulation field.Consult Figure 10, this traditional design is to adjust the fixedly size of total magnetic moment 170,172 of the last fixed bed 158 of lamination and following fixed bed 162 of magnetic, makes the outer stray field of generation.Stray field can produce a bias voltage magnetic field H BIAS to free lamination in addition, as shown at right.The starting point in biconditional operation zone is approaching to magnetic field zero.Wherein, adjust the size of total magnetic moment, can adjust by thickness according to simple mode.
For above-mentioned traditional approach, though magnetic field H BIAS, it is not unconfinedly to increase.If the present invention studies the back in great detail to conventional art and finds that bias voltage magnetic field H BIAS is too strong, directly disturb stored data in the storage element to I haven't seen you for ages, cause the failure of data access.
Summary of the invention
The objective of the invention is to, a kind of data access method of magnetic storage is provided, under the bifurcation pattern, operate, can prevent the access failure probability that under big bias voltage magnetic field, caused, therefore can successfully operation smoothly under low current.
The present invention proposes a kind of data access method of magnetic storage, be applicable to a magnetic storage element to a magnetic memory device, come the access data with a pair of morphotype formula, wherein this magnetic storage element structure comprises the free lamination of a magnetic, the free lamination of this magnetic has been applied in a bias voltage magnetic field, with this bias voltage magnetic direction is 0 degree, as a reference direction, wherein this magnetic memory device has one first electric current line and one second electric current line, make a positive current that flows through this first electric current line be created in+45 the degree directions magnetic field, a positive current that flows through this second electric current line is created in the magnetic field of-45 degree directions, it is characterized in that this data access method comprises:
Change parameter according to operation, in order to change a storage data of this magnetic storage element, this change data manipulation comprises:
In a phase one, an electric current that applies a first direction is simultaneously given this first electric current line, and gives this second electric current line to offset this bias voltage magnetic field of at least one part at an electric current of this first direction; And
Carry out a turning operation, with the magnetization vector counter-rotating of the free lamination of this magnetic.
According to an embodiment, in said method, this turning operation comprises:
In a subordinate phase, an electric current that applies a second direction is simultaneously given this first electric current line, and an electric current of this first direction is given this second electric current line;
In a phase III, an electric current that applies this second direction is simultaneously given this first electric current line, and an electric current of this second direction is given this second electric current line;
In a quadravalence section, an electric current that applies this first direction is simultaneously given this first electric current line, and an electric current of this second direction is given this second electric current line; And
At a five-stage, an electric current that applies this first direction is simultaneously given this first electric current line, and an electric current of this first direction is given this second electric current line;
Wherein this first direction and this second direction are each other in the other direction.
According to an embodiment, in said method, this first direction is a positive current direction or a negative current direction.
According to an embodiment, in said method, before this phase one and after this five-stage, this magnetic storage element is in no external magnetic field state.
According to an embodiment, in said method, in this five-stage, a total magnetic field that is applied to this magnetic storage element is offset this bias voltage magnetic field fully, and wherein this total magnetic field is produced by this first electric current line and this second electric current line.
According to an embodiment, in said method, in this phase one, a total magnetic field that is applied to this magnetic storage element is offset this bias voltage magnetic field fully, and wherein this total magnetic field is produced by this first electric current line and this second electric current line.
According to an embodiment, in said method, in this turning operation, stage before stopping to apply the magnetic field that produces by this first electric current line and this second electric current line, an electric current that applies this first direction is simultaneously given this first electric current line, and gives this second electric current line to offset this bias voltage magnetic field of at least one part at an electric current of this first direction.
The present invention proposes a kind of data access method of magnetic storage, be applicable to a magnetic storage element to a magnetic memory device, come the access data with a pair of morphotype formula, wherein this magnetic storage element structure comprises the free lamination of a magnetic, the free lamination of this magnetic has been applied in a bias voltage magnetic field, with this bias voltage magnetic direction is 0 degree, as a reference direction, wherein this magnetic memory device has one first electric current line and one second electric current line, make a positive current that flows through this first electric current line be created in+45 the degree directions magnetic field, a positive current that flows through this second electric current line is created in the magnetic field of-45 degree directions, it is characterized in that this data access method comprises:
One write operation desires to write data in order to this magnetic storage element is write one, comprising:
In a phase one, an electric current that applies a first direction is simultaneously given this first electric current line, and an electric current of this first direction is given this second electric current line;
Read this magnetic storage element stored present data at present, if wherein this to desire to write data identical with this present data, then stop to apply described electric current, if this desire to write data and this present data inequality, then proceed following steps;
In a subordinate phase, an electric current that applies a second direction is simultaneously given this first electric current line, and an electric current of this first direction is given this second electric current line;
In a phase III, an electric current that applies this second direction is simultaneously given this first electric current line, and an electric current of this second direction is given this second electric current line;
In a quadravalence section, an electric current that applies this first direction is simultaneously given this first electric current line, and an electric current of this second direction is given this second electric current line; And
At a five-stage, an electric current that applies this first direction is simultaneously given this first electric current line, and an electric current of this first direction is given this second electric current line;
Wherein this first direction and this second direction are each other in the other direction.
According to an embodiment, in said method, this first direction is a negative current direction or a positive current direction.
According to an embodiment, in said method, before this phase one and after this five-stage, this magnetic storage element is in no external magnetic field state.
According to an embodiment, in said method, in this phase one, a total magnetic field that is applied to this magnetic storage element is offset this bias voltage magnetic field fully, and wherein this total magnetic field is produced by this first electric current line and this second electric current line.
According to an embodiment, in said method, should be in this five-stage, a total magnetic field that is applied to this magnetic storage element is offset this bias voltage magnetic field fully, and wherein this total magnetic field is produced by this first electric current line and this second electric current line.
The present invention proposes a kind of data access method of magnetic storage, be applicable to a magnetic storage element to a magnetic memory device, come the access data with a pair of morphotype formula, wherein this magnetic storage element structure comprises the free lamination of a magnetic, the free lamination of this magnetic has been applied in a bias voltage magnetic field, with this bias voltage magnetic direction is 0 degree, as a reference direction, wherein this magnetic memory device has one first electric current line and one second electric current line, make a positive current that flows through this first electric current line be created in+45 the degree directions magnetic field, a positive current that flows through this second electric current line is created in the magnetic field of-45 degree directions, it is characterized in that this data access method comprises:
One read operation in order to this magnetic storage element is read stored data, comprising:
An electric current that is applied to a direction is simultaneously given this first electric current line, and gives this second electric current line at an electric current of this direction, and the total magnetic field that wherein said electric current produced is in order to eliminate this bias voltage magnetic field of at least one part; And
Read this magnetic storage element these stored data at present.
According to an embodiment, in said method, this direction is a negative current direction.
According to an embodiment, in said method, apply before the described electric current, this magnetic storage element is in no external magnetic field state.
According to an embodiment, in said method, this total magnetic field is offset this bias voltage magnetic field fully.
Description of drawings
For above and other objects of the present invention, feature and advantage can be become apparent, preferred embodiment cited below particularly, and conjunction with figs. are described in detail below, wherein:
Fig. 1 illustrates the basic structure of a magnetic storage element.
Fig. 2 illustrates the storage mechanism of magnetic storage.
Fig. 3 illustrates the magnetic resistance (R) of magnetic storage element and the relation of magnetic field (H) size.
Fig. 4 illustrates the structure of arrays of traditional storage element.
Fig. 5 illustrates the basic structure of traditional storage element.
Fig. 6 illustrates the sequential that magnetic field applies.
Fig. 7 illustrates in the magnetization vector of two ferromagnetic layers 150,154 up and down of free lamination 166 and the reaction of externally-applied magnetic field size.
Fig. 8 illustrates the magnetic field that operating current produced by Fig. 6, is applied to the flip-flop mechanism on the storage element.
Fig. 9 illustrates two magnetization vectors on two free layers, relatively the respective operations zone of externally-applied magnetic field.
Figure 10 illustrates the design diagram of reduction magnetic manipulation field.
Figure 11 illustrates the present invention to be changed the thickness of the following fixed bed 162 among Figure 10, with the successful probability of magnetization vector upset of micromagnetics emulation free layer.
Figure 12 A-12B illustrates bias voltage magnetic field and adds the synoptic diagram that concerns between the magnetic manipulation field.
Figure 13 A-13B illustrates difference between bias voltage magnetic field and the desirable magnetic direction.
Figure 14 illustrates the schematic diagram of mechanism of the magnetic manipulation field that solves unnecessary component of a vector.
Figure 15 illustrates another problem of inquiring into according to the present invention.
Figure 16 illustrates according to the embodiment of the invention, the accessing operation pattern of full negative pulse.
Figure 17 illustrates the mechanism that can promote the operation accuracy according to magnetic manipulation field of the present invention.
Embodiment
The present invention changes the thickness of the following fixed bed 162 among Figure 10, and with the probalility of success of the magnetization vector that measures the upset free layer, its result as shown in figure 11.Consult Figure 11, the data representative thickness of round dot is the situation of 4.3nm.In addition, the data representative thickness of triangle form point is the situation of 4.5nm, and the data representative thickness of square dot is the situation of 5.5nm.Thickness more then bias voltage magnetic field is bigger.Corresponding to the write operation magnetic field of Fig. 6, under the condition of H1=H2, be used as horizontal ordinate with the magnetic field size of one.Wherein, the thickness of last fixed bed 158 is reference thickness with 3.0nm.For the distribution scenario of round dot, a pair of magnetic distance of the free lamination that when the about 430e in magnetic field, just can successfully overturn, its upset probalility of success can maintain good result.When the thickness of fixed bed 162 increased instantly, as the distribution of triangle form point, its magnetic manipulation field can be reduced, and the upset probalility of success also can maintain the scope of acceptance.When the thickness of fixed bed 162 more is increased to 5.5nm instantly,,, be about 170e, yet its upset probalility of success is not more than 40 of percentage, as the distribution of square dot to lower the required magnetic field of upset though can produce strong bias voltage magnetic field.Therefore, the thickness of following fixed bed 162 has a thickness limit, can't not operate smoothly if then have this assembly above this thickness.
After the present invention found this problem, continuing to inquire into may mechanism and solution.Figure 12 A-12B illustrates bias voltage magnetic field and adds the synoptic diagram that concerns between the magnetic manipulation field.Consult Figure 12 A, but because magnetic field is the vector of addition.At three period t1-t3 of Fig. 8, three magnetic fields 1200,1202,1204 that relative easy axis direction is applied.The direction representative of dotted line and the folded angle of easy axle are 45 degree.Consult Figure 12 B, the outer stray field at the fixedly lamination of storage element can apply a bias voltage magnetic field 1206 to free lamination.Therefore, be respectively 1208,1210,1212 in the total magnetic field of three period t1-t3.Not on the ideal orientation of expection in the total magnetic field 1208,1212 of t1 and t3 significantly.Here it is causes one of possible cause of upset failure.
After finding out possible cause, the present invention continues to analyze its mechanism, to seek soluble mode.Figure 13 A-13B illustrates difference between bias voltage magnetic field and the desirable magnetic direction.Consult Figure 13 A, two component of a vector 1206a, 1206b at 45 degree resolved in bias voltage magnetic field 1206, wherein can make the total magnetic field deviation in driction only be a component of a vector wherein.Consult Figure 13 B, at period t1 (left figure), because component of a vector 1206b is on the ideal orientation of expection, therefore, the magnetic manipulation field of actual desired can reduce, and promptly is that write current can reduce, but it is actual in the resulting effective magnetic field 1220 of 45 degree directions, still enough big.And the problem reduction that will consider becomes how to overcome unnecessary component of a vector 1206a.At period t2 (middle figure), because bias voltage magnetic field just at a direction of principal axis, therefore obtains effective magnetic field 1222.At period t3 (right figure), t1 is similar in the period, and unnecessary component of a vector 1206b need be solved, to obtain effective magnetic field 1224.
Figure 14 illustrates the schematic diagram of mechanism of the magnetic manipulation field that solves unnecessary component of a vector.Consult Figure 14, in the situation of period t1, because unnecessary component of a vector 1206a is on the dotted line of 45 degree, the control of its corresponding magnetic field H 2.So,, on sequential, can produce a reversed magnetic field 1300 earlier, just apply reverse electric current for the operation of magnetic field H 2.So, reversed magnetic field 1300 can be offset a part of component of a vector 1206a at least.Preferable situation is to offset component of a vector 1206a fully.Similarly, in the situation of period t3, reversed magnetic field 1302 can be offset a part of component of a vector 1206b at least.Preferable situation is to offset component of a vector 1206b fully.The mode of operation of Figure 14 is called the mode of operation of two negative pulses again.
Figure 15 illustrates another problem of inquiring into according to the present invention.Consult Figure 15,, then be enough to influence the magnetization vector 1310,1312 of free layer if bias voltage magnetic field 1206 is too big.For reaching balance, magnetization vector 1310,1312 biased magnetic fields 1206 influence, and a subtended angle is arranged.Because magnetization vector 1310,1312 is rotated, therefore can cause the failure of upset before not applying magnetic manipulation field.Again,, can make also then under biconditional operation that its magnetization vector is not being rotated of expection, therefore cause access errors if the magnetization vector of free layer 1310,1312 has a deviation during fabrication in advance.
Figure 16 illustrates according to the embodiment of the invention, the accessing operation pattern of full negative pulse.Consult Figure 16, at the operation of a upset, at period t0, storage element is the environment that is in no externally-applied magnetic field.The last figure of Figure 16 is the synoptic diagram in the relative bias voltage of the magnetic direction magnetic field of period t1-t5 1206 directions.Magnetic field H 1 is to apply the sequential relationship that writes magnetic field 1400a, and magnetic field H 2 is to apply the sequential relationship that writes magnetic field 1400b.For fear of the influence in bias voltage magnetic field 1206, at period t1, apply and write magnetic field 1400a, 1400b in two 45 degree directions, it is in order to offsetting a part of bias voltage magnetic field 1206 at least, or preferably, offsets bias voltage magnetic field 1206 fully.Negative magnetic field pulse reaches for corresponding electric current line by applying negative current or inverse current.At period t2, because the negative fluxfield pulse is still kept, therefore still have to write magnetic field 1400b, it can eliminate the unnecessary component in bias voltage magnetic field 1206.At period t3, writing magnetic field 1400a, 1400b all is the positive flux field pulse.At period t4, writing magnetic field 1400a is the negative fluxfield pulse, to eliminate the unnecessary component in bias voltage magnetic field 1206.At period t5, t1 is the same with the period, then at period t6, stops to apply magnetic field.
Figure 17 illustrates the mechanism that can promote the operation accuracy according to magnetic manipulation field of the present invention.In Figure 17, scheming (a) is traditional situation with scheming (b), owing to there is not the operation of negative fluxfield, therefore state initially with end the time is not all eliminated the mechanism in bias voltage magnetic field 1206, leads to the failure.Scheming (c) is situation of the present invention with figure (d), because the operation of negative fluxfield is arranged, can eliminate the effect in bias voltage magnetic field 1206 by state when initial and end, therefore can effectively increase the successful accuracy rate of upset.
Above-mentioned magnetic manipulation field as Figure 16 mainly is at the content that changes storage element.If at the write operation in the accessing operation, can read the content of storage element earlier at period t1.If the data that writes is identical with present data, then need not carry out the operation of follow-up upset.If data that writes and present data are inequality, then just need carry out the operation of follow-up upset, to change data content.
In other words, when reading the money data, the present invention proposes to apply opposite magnetic field, with the bias voltage magnetic field of elimination some at least, or eliminates bias voltage magnetic field fully, and the accuracy of reading is increased.
In sum, in the magnetic manipulation field of the present invention's proposition,, allow by increase bias voltage magnetic field, and further reduce write current because period t1 preferably cooperates the operation of period t6 as Figure 16.
Though the present invention discloses as above with preferred embodiment; right its is not in order to limit the present invention; anyly have the knack of this operator; without departing from the spirit and scope of the present invention; when can doing a little change and retouching, so protection scope of the present invention is when looking accompanying being as the criterion that claim defines.
Claims (16)
1. the data access method of a magnetic storage, be applicable to a magnetic storage element to a magnetic memory device, come the access data with a pair of morphotype formula, wherein this magnetic storage element structure comprises the free lamination of a magnetic, the free lamination of this magnetic has been applied in a bias voltage magnetic field, with this bias voltage magnetic direction is 0 degree, as a reference direction, wherein this magnetic memory device has one first electric current line and one second electric current line, make a positive current that flows through this first electric current line be created in+45 the degree directions magnetic field, a positive current that flows through this second electric current line is created in the magnetic field of-45 degree directions, it is characterized in that this data access method comprises:
Change parameter according to operation, in order to change a storage data of this magnetic storage element, this change data manipulation comprises:
In a phase one, an electric current that applies a first direction is simultaneously given this first electric current line, and gives this second electric current line to offset this bias voltage magnetic field of at least one part at an electric current of this first direction; And
Carry out a turning operation, with the magnetization vector counter-rotating of the free lamination of this magnetic.
2. the data access method of magnetic storage as claimed in claim 1 is characterized in that, wherein this turning operation comprises:
In a subordinate phase, an electric current that applies a second direction is simultaneously given this first electric current line, and an electric current of this first direction is given this second electric current line;
In a phase III, an electric current that applies this second direction is simultaneously given this first electric current line, and an electric current of this second direction is given this second electric current line;
In a quadravalence section, an electric current that applies this first direction is simultaneously given this first electric current line, and an electric current of this second direction is given this second electric current line; And
At a five-stage, an electric current that applies this first direction is simultaneously given this first electric current line, and an electric current of this first direction is given this second electric current line;
Wherein this first direction and this second direction are each other in the other direction.
3. the data access method of magnetic storage as claimed in claim 2 is characterized in that, wherein this first direction is a positive current direction or a negative current direction.
4. the data access method of magnetic storage as claimed in claim 2 is characterized in that, wherein before this phase one and after this five-stage, this magnetic storage element is in no external magnetic field state.
5. the data access method of magnetic storage as claimed in claim 2, it is characterized in that, wherein in this five-stage, a total magnetic field that is applied to this magnetic storage element is offset this bias voltage magnetic field fully, and wherein this total magnetic field is produced by this first electric current line and this second electric current line.
6. the data access method of magnetic storage as claimed in claim 1, it is characterized in that, wherein in this phase one, a total magnetic field that is applied to this magnetic storage element is offset this bias voltage magnetic field fully, and wherein this total magnetic field is produced by this first electric current line and this second electric current line.
7. the data access method of magnetic storage as claimed in claim 1, it is characterized in that, wherein in this turning operation, stage before stopping to apply the magnetic field that produces by this first electric current line and this second electric current line, an electric current that applies this first direction is simultaneously given this first electric current line, and gives this second electric current line to offset this bias voltage magnetic field of at least one part at an electric current of this first direction.
8. the data access method of a magnetic storage, be applicable to a magnetic storage element to a magnetic memory device, come the access data with a pair of morphotype formula, wherein this magnetic storage element structure comprises the free lamination of a magnetic, the free lamination of this magnetic has been applied in a bias voltage magnetic field, with this bias voltage magnetic direction is 0 degree, as a reference direction, wherein this magnetic memory device has one first electric current line and one second electric current line, make a positive current that flows through this first electric current line be created in+45 the degree directions magnetic field, a positive current that flows through this second electric current line is created in the magnetic field of-45 degree directions, it is characterized in that this data access method comprises:
One write operation desires to write data in order to this magnetic storage element is write one, comprising:
In a phase one, an electric current that applies a first direction is simultaneously given this first electric current line, and an electric current of this first direction is given this second electric current line;
Read this magnetic storage element stored present data at present, if wherein this to desire to write data identical with this present data, then stop to apply described electric current, if this desire to write data and this present data inequality, then proceed following steps;
In a subordinate phase, an electric current that applies a second direction is simultaneously given this first electric current line, and an electric current of this first direction is given this second electric current line;
In a phase III, an electric current that applies this second direction is simultaneously given this first electric current line, and an electric current of this second direction is given this second electric current line;
In a quadravalence section, an electric current that applies this first direction is simultaneously given this first electric current line, and an electric current of this second direction is given this second electric current line; And
At a five-stage, an electric current that applies this first direction is simultaneously given this first electric current line, and an electric current of this first direction is given this second electric current line;
Wherein this first direction and this second direction are each other in the other direction.
9. the data access method of magnetic storage as claimed in claim 8 is characterized in that, wherein this first direction is a negative current direction or a positive current direction.
10. the data access method of magnetic storage as claimed in claim 8 is characterized in that, wherein before this phase one and after this five-stage, this magnetic storage element is in no external magnetic field state.
11. the data access method of magnetic storage as claimed in claim 8, it is characterized in that, wherein in this phase one, a total magnetic field that is applied to this magnetic storage element is offset this bias voltage magnetic field fully, and wherein this total magnetic field is produced by this first electric current line and this second electric current line.
12. the data access method of magnetic storage as claimed in claim 8, it is characterized in that, wherein should be in this five-stage, a total magnetic field that is applied to this magnetic storage element is offset this bias voltage magnetic field fully, and wherein this total magnetic field is produced by this first electric current line and this second electric current line.
13. the data access method of a magnetic storage, be applicable to a magnetic storage element to a magnetic memory device, come the access data with a pair of morphotype formula, wherein this magnetic storage element structure comprises the free lamination of a magnetic, the free lamination of this magnetic has been applied in a bias voltage magnetic field, with this bias voltage magnetic direction is 0 degree, as a reference direction, wherein this magnetic memory device has one first electric current line and one second electric current line, make a positive current that flows through this first electric current line be created in+45 the degree directions magnetic field, a positive current that flows through this second electric current line is created in the magnetic field of-45 degree directions, it is characterized in that this data access method comprises:
One read operation in order to this magnetic storage element is read stored data, comprising:
An electric current that is applied to a direction is simultaneously given this first electric current line, and gives this second electric current line at an electric current of this direction, and the total magnetic field that wherein said electric current produced is in order to eliminate this bias voltage magnetic field of at least one part; And
Read this magnetic storage element these stored data at present.
14. the data access method of magnetic storage as claimed in claim 13 is characterized in that, wherein this direction is a negative current direction.
15. the data access method of magnetic storage as claimed in claim 13 is characterized in that, wherein applies before the described electric current, this magnetic storage element is in no external magnetic field state.
16. the data access method of magnetic storage as claimed in claim 13 is characterized in that, wherein this total magnetic field is offset this bias voltage magnetic field fully.
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