CN100565212C - Micro-machine acceleration transducer and manufacture method based on (111) silicon - Google Patents
Micro-machine acceleration transducer and manufacture method based on (111) silicon Download PDFInfo
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- CN100565212C CN100565212C CNB2006100294231A CN200610029423A CN100565212C CN 100565212 C CN100565212 C CN 100565212C CN B2006100294231 A CNB2006100294231 A CN B2006100294231A CN 200610029423 A CN200610029423 A CN 200610029423A CN 100565212 C CN100565212 C CN 100565212C
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Abstract
A kind of micro-machine acceleration transducer and manufacture method thereof based on (111) silicon, this sensor is to be made of a slice (111) monocrystalline silicon substrate and each a slice of upper and lower substrate, (111) inertial mass on the silicon substrate is to be connected to fixed border by at least one pair of the elasticity overarm on the same substrate, under external acceleration effect, can do motion perpendicular to the substrate surface direction, and cause that the electric capacity between plate electrode on itself and the upper and lower substrate changes, to detect external acceleration.Described elasticity overarm is symmetrical up and down with respect to (111) silicon substrate, and it is made and yardstick control is realized by chemistry of silicones anisotropic etch and the combination of high-aspect-ratio dry etch process, and (111) silicon substrate is connected by the aligning bonding with upper substrate, infrabasal plate.This sensor realizes that closed loop detects, and has that structural symmetry is good, process controllability is good, accuracy of detection is high, is easy to characteristics such as multiaxis is integrated, is applied to fields such as oil seismic exploration.
Description
Technical field
The present invention relates to a kind of micro-machine acceleration transducer based on (111) silicon and preparation method thereof, adopt the microelectron-mechanical process technology to make, belong to microelectromechanical systems (MEMS) field.
Background technology
Acceleration transducer has extensively and important use in fields such as inertial navigation, attitude control, vibration survey, petroleum prospectings.The micro-machine acceleration transducer that utilizes microelectron-mechanical process technology (Micro-machining Technology) to make has that volume is little, cost is low, can produce in batches, characteristics such as good environmental adaptability.
Present micro-machine acceleration transducer mainly adopts open loop and closed-loop fashion in context of detection, and the sensor of closed loop work has higher dynamic range, higher accuracy of detection.People such as RobertH.Bullis propose a kind of micro-machine acceleration transducer (" Capacitive accelerometer with mid-plane proof mass " of sandwich structure, United States Patent (USP) 5008774), wherein, the acceleration mass that is used for capacitance detecting is formed by two wafer bondings, and the suspension strut beam (hinge) that is symmetrically distributed is to realize that by heavy doping boron (B) the self termination corrosion creates, and these beams are positioned at the inertial mass middle part.This inertial mass can move up and down, by measuring the capacitance variations between kinetic thus and upper and lower base plate detecting electrode, to obtain acceleration information.This sensor can closed loop work.Micro-machine acceleration transducer (" Micromechanical accelerometerand method of manufacture thereof " in people such as Gessner proposition, United States Patent (USP) 5504032), be made up of 5 silicon chips, the tie-beam of central movable inertial mass and silicon chip utilizes two-sided anisotropic etch to form.This sensor can be operated in closed-loop fashion.The force balance type micro-machine acceleration transducer (" Method for forming an electrostaticallyforce balanced silicon accelerometer " that people such as Warren propose, United States Patent (USP) 5503285), inertial mass is formed by the siliceous gauge block bonding of two complementations (Complementary), and the suspension strut beam is formed by the self termination corrosion on the silicon that ion injects.The design and the manufacture method (" Sensordesign and process " of the acceleration transducer that is applied to seismic prospecting that people such as Selvakumar propose, United States Patent (USP) 6871544) in, its sensor is made up of 4 silicon chips, the central movable inertial mass is to be formed by 2 wafer bondings, and is shaped on the vacuum suction passage; Elastic beam forms respectively on two silicon chips equally.
Structural design from above-mentioned micro-machine acceleration transducer, especially on the manufacture craft as can be seen, the deficiency of ubiquity technology more complicated, the making of inertial mass all needs many wafer bondings, this requires high-precision bonding to aim at, and highly doped (or ion injection) corrosion cessation method is made the suspension strut beam and can be introduced higher stress.The technology cost that these not only increase, and can increase the asymmetry of micro mechanical structure has increased the complicacy of closed-loop control, and the stability of sensor, temperature characterisitic etc. are all had negative effect.In addition, this many wafer bondings are made the method and structure design of inertial mass, and three of being difficult to the realization monolithic are integrated, in the three-component application scenario, usually need to adopt the mode of three assemblings, all have a large amount of challenges at aspects such as bearing accuracy, location cost, reliabilities steady in a long-term.
Summary of the invention
For solving the above problems, the invention provides a kind of micro-machine acceleration transducer and manufacture method based on (111) silicon, this sensor is to be made of a slice (111) monocrystalline silicon substrate and each a slice of upper and lower substrate, and
A) inertial mass, at least one pair of elasticity overarm, frame are arranged on (111) silicon substrate; The overarm of this elasticity be a symmetry up and down with respect to (111) silicon substrate, and the end that every elasticity is hung oneself from a beam is connected on the inertial mass, and the other end is connected on the frame;
B) inertial mass can be done the motion perpendicular to (111) silicon substrate surface direction under the support of elasticity overarm;
C) (111) silicon substrate has frame to be connected with upper substrate and infrabasal plate bonding;
D) on the lower surface of upper substrate the upper flat plate electrode is arranged, isolate for electrical isolation between this upper flat plate electrode and (111) silicon substrate, and go up electric capacity with the common formation of inertial mass and clearance; Simultaneously, on the upper surface of infrabasal plate lower plate electrode is arranged, isolate for electrical isolation between this lower plate electrode and (111) silicon substrate, and constitute electric capacity down jointly with inertial mass and clearance;
E) be distributed with the overload protection bump structure at least one substrate.
Each limit of the elasticity overarm that described upper and lower surface symmetry at (111) silicon substrate is made be parallel to respectively and perpendicular to (111) silicon substrate lip-deep＜110〉crystal orientation.
The longest edge of the inertial mass on described (111) silicon substrate be parallel to respectively and perpendicular to (111) silicon substrate lip-deep＜110〉crystal orientation.
The width that the thickness of described elasticity overarm is hung oneself from a beam less than elasticity, and much smaller than inertial mass thickness.
The thickness of described elasticity overarm is not less than 5 microns.
Last electric capacity and following electric capacity are symmetrical about with respect to (111) silicon substrate be, and its clearance is the recess of the upper and lower surface of the recess of the recess of upper substrate lower surface or infrabasal plate upper surface or (111) silicon substrate.The damping via-hole array is arranged on the described inertial mass.
The present invention makes by following key step to realize:
A) form recess at the upper surface of (111) silicon substrate or the lower surface of upper substrate,, and form the overload protection salient point as the electric capacity clearance; Form recess at the lower surface of (111) silicon substrate or the upper surface of infrabasal plate,, and form the overload protection salient point as the electric capacity clearance;
B) on (111) silicon substrate corresponding to aforementioned all recess area, carry out double-sided alignment perpendicular to the upper and lower surface of silicon substrate and be etched to desired depth, symmetric position form along＜110〉crystal orientation go up restriction groove and restriction groove down;
C) deposit passivation layer covers the upper and lower surface of (111) silicon substrate, and fills bottom surface and side that corrosion limits groove up and down;
D) be etched to desired depth perpendicular to (111) silicon substrate lower surface, form be parallel to edge＜110 of restriction groove down the erosion grooves in crystal orientation, its trenched side-wall along＜110〉crystal orientation is (110) crystal face; Simultaneously, this erosion grooves bottom surface and upper surface distance is not more than the restriction gash depth;
E) (110) the crystal face sidewall in the erosion grooves is carried out chemical anisotropic etch, until its lateral encroaching width greater than the elasticity required width of hanging oneself from a beam; Then, remove the lower surface passivation layer;
F) upper surface at infrabasal plate forms lower plate electrode; Electrode goes between under the infrabasal plate surface forms;
G) lower surface of (111) silicon chip substrate is aimed at bonding with the upper surface of infrabasal plate, constitute electric capacity down with (111) substrate and clearance;
H) lead-in wire electrode in the upper surface of (111) silicon chip substrate forms;
I) vertical (111) silicon chip upper surface of base plate connects the deep erosion of substrate, forms inertial mass, at least one pair of elasticity overarm, damping via-hole array, frame;
J) lower surface at upper substrate forms the upper flat plate electrode; Electrode goes between on upper substrate surface forms;
K) upper surface of (111) silicon chip substrate is aimed at bonding with the lower surface of upper substrate, reach with (111) substrate and go up upward electric capacity of gap formation;
L), realize the separation of sensor chip through scribing process.
The described length that goes up the crystal orientation, edge (110) of restriction groove and following restriction groove is far longer than its width, and simultaneously, the length in crystal orientation, the edge of described erosion grooves (110) is far longer than its width.
This sensor is perpendicular to the external acceleration of (111) silicon substrate surface direction, and can closed loop detect.
In sum, the micro-machine acceleration transducer of realizing according to the present invention based on (111) silicon is made of a slice (111) monocrystalline silicon substrate and each a slice of upper and lower substrate; Inertial mass is to be connected to fixed border by at least one pair of elasticity that forms on same (111) silicon substrate overarm, under external acceleration effect, can do motion perpendicular to the substrate surface direction, by detecting the capacitance variations between the plate electrode on itself and the upper and lower substrate, can obtain external acceleration information.Described elasticity overarm is symmetrical up and down with respect to (111) silicon substrate, and it is made and yardstick control is realized by chemistry of silicones anisotropic etch and the combination of high-aspect-ratio dry etch process; (111) silicon substrate then is to be connected by the aligning bonding to form integral body with upper substrate and infrabasal plate.
The micro-machine acceleration transducer that the present invention relates to, core structurally form on monolithic (111) monocrystalline silicon substrate, by the elasticity overarm of at least one pair of substrate upper and lower surface symmetric position connect support, can make inertial mass perpendicular to the motion of (111) silicon substrate surface direction.Owing on same (111) monocrystalline silicon substrate, make, the micro mechanical structure each several part, especially elasticity overarm and connected inertial mass and frame etc. material be identical in nature, can at utmost reduce even eliminate the influence of the stress that causes by doping etc. and stress gradient to device performance (as zero stability, temperature drift etc.).
The method for making of the micro-machine acceleration transducer that the present invention relates to, in conjunction with chemistry of silicones anisotropic etch and high-aspect-ratio dry etch process, on same (111) monocrystalline silicon substrate, produce inertial mass, with respect to (111) silicon substrate core microstructures such as at least one pair of elasticity overarm of balanced configuration up and down, need not to carry out the aligning bonding of multi-disc silicon substrate, greatly reduce the manufacturing process difficulty, help improving yield rate, reduce cost of manufacture.The particularly making of elasticity overarm, made full use of the difference in height of the corrosion rate of silicon (111), (110) crystal face and passivation layer, or selectivity, wait chemical anisotropic etch behavior is limited and controls by making along＜110〉crystal orientation corrosion restriction grooves, can guarantee the elasticity overarm well in yardstick and locational symmetry, this helps suppressing cross-couplings and improves sensor performance.
Superior effect of the present invention is:
1) this sensor can be realized the closed loop perpendicular to the external acceleration of substrate surface is detected, have characteristics such as structural symmetry is good, process controllability is good, accuracy of detection is high, manufacture craft is simple and easy to control, cost is lower, dynamic response is good, can be applicable to fields such as oil seismic exploration.
2) core of the present invention be form on (111) silicon substrate, by the overarm of the elasticity of at least one pair of substrate upper and lower surface symmetric position connect support, can make inertial mass perpendicular to the motion of (111) silicon substrate surface direction.Owing on same (111) monocrystalline silicon substrate, make, the various piece of micro mechanical structure, especially elasticity overarm and connected inertial mass and frame etc. are identical at material in nature, stress that can at utmost reduce even eliminate owing to mix etc. causes and stress gradient are to device performance, as the influence of zero stability, temperature drift etc.
The method for making of the micro-machine acceleration transducer that 3) the present invention relates to, in conjunction with chemistry of silicones anisotropic etch and high-aspect-ratio dry etch process, on same (111) monocrystalline silicon substrate, produce inertial mass, with respect to (111) silicon substrate core microstructures such as at least one pair of elasticity overarm of balanced configuration up and down, need not to carry out the aligning bonding of multi-disc silicon substrate, greatly reduce the manufacturing process difficulty, help improving yield rate, reduce cost of manufacture.The particularly making of elasticity overarm, made full use of the difference in height of the corrosion rate of silicon (111), (110) crystal face and passivation layer, or selectivity, chemical anisotropic etch behavior is limited and controls, can guarantee the elasticity overarm well in yardstick and locational symmetry, this helps suppressing cross-couplings and improves sensor performance.
4) micro-machine acceleration transducer of the present invention can realize that monolithic is integrated with other acceleration transducers, because microelectromechanical systems (MEMS) process characteristic can guarantee orthogonality, helps realizing three integrated acceleration transducer micro-systems of miniaturization.
Description of drawings
Fig. 1 is the whole sectional schematic diagram of micro-machine acceleration transducer of the present invention;
Fig. 2 (comprising Fig. 2 a, Fig. 2 b) is the vertical view and the sectional drawing of (111) silicon substrate in the micro-machine acceleration transducer of the present invention;
Fig. 3 (comprising Fig. 3 a, Fig. 3 b) is the sectional drawing and the lower surface synoptic diagram of the upper substrate in the micro-machine acceleration transducer of the present invention;
Fig. 4 (comprising Fig. 4 a, Fig. 4 b) is the sectional drawing and the upper surface synoptic diagram of the infrabasal plate in the micro-machine acceleration transducer of the present invention;
Fig. 5 (comprising Fig. 5 a～Fig. 5 f) is the manufacture craft flow process sectional drawing of (111) of the present invention monocrystalline silicon substrate;
Fig. 6 (comprising Fig. 6 a～Fig. 6 e) is the manufacture craft flow process sectional drawing of upper substrate of the present invention;
Fig. 7 (comprising Fig. 7 a～Fig. 7 e) is the manufacture craft flow process sectional drawing of infrabasal plate of the present invention;
Fig. 8 (comprising Fig. 8 a～Fig. 8 h) integrates for substrate of the present invention and microstructure discharges manufacture craft flow process sectional drawing;
Fig. 9 (comprising Fig. 9 a～Fig. 9 c) is monocrystalline silicon anisotropy chemistry corrosion principle key diagram;
Figure 10 (comprising Figure 10 a, Figure 10 b) is the basic functional principle key diagram of micro-machine acceleration transducer of the present invention;
Figure 11 is three Orthogonal Composite synoptic diagram based on the micro-machine acceleration transducer of (111) silicon.
Label declaration in the accompanying drawing
100--(111) silicon substrate;
The 101-frame;
The upper surface of 102a--(111) silicon substrate; The lower surface of 102b--(111) silicon substrate;
The 103--inertial mass;
The longest edge of 103a--inertial mass; The broadside of 103b--inertial mass;
The overarm of 104-elasticity;
The upper surface of 104a--elasticity overarm; The lower surface of 104b--elasticity overarm;
105--damping via-hole array; Electrode goes between among the 106--;
Anchor point in the middle of the 107a-; 107b-bight anchor point;
The last restriction of 110a-groove; 110b-is the restriction groove down;
The 111a-passivation layer; The 111b-passivation layer;
The 113-erosion grooves;
The 200-upper substrate;
The 201a-upper surface; The 201b-lower surface;
202-electrical isolation separation layer; The 203-upper recess;
204-overload protection salient point; 205-upper flat plate electrode;
The last lead-in wire of 206-electrode;
The 300-infrabasal plate;
The 301a-upper surface; The 301b-lower surface;
302-electrical isolation separation layer; The 303-lower concave part;
304-overload protection salient point; The 305-lower plate electrode;
306-is the lead-in wire electrode down;
The 401-mask layer; The 500-substrate;
600-three substrate integrate bodies;
601-Z to sensor; 602-Y to sensor;
603-X to sensor;
The 610a-fixed electorde; The 610b-fixed electorde;
The 611a-movable electrode; The 611b-movable electrode;
The 612a-elastic beam; The 612b-elastic beam;
Electric capacity broach on the 613a-fixed electorde; Electric capacity broach on the 613b-fixed electorde;
But the electric capacity broach on the 614a-fixed electrode; But the electric capacity broach on the 614b-fixed electrode;
The 615a-inertial mass; The 615b-inertial mass;
620-separates groove.
Embodiment
Further illustrate architectural feature of the present invention and manufacturing process below in conjunction with accompanying drawing.
The invention provides a kind of micro-machine acceleration transducer and manufacture method thereof based on (111) silicon, this sensor is to be made of a slice (111) monocrystalline silicon substrate 100 and upper substrate 200, infrabasal plate 300 each a slice, and
A) inertial mass 103, at least one pair of elasticity overarm 104, frame are arranged on (111) silicon substrate 100; The overarm 104 of this elasticity be a symmetry up and down with respect to (111) silicon substrate 100, and a hang oneself from a beam end of 104 of every elasticity is connected on the inertial mass 103, and the other end is connected on the frame 101;
B) inertial mass 103 can be done the motion perpendicular to (111) silicon substrate 100 surface direction under elasticity is hung oneself from a beam 104 support;
C) (111) silicon substrate 100 has frame 101 to be connected with upper substrate 200 and infrabasal plate 300 bondings;
D) on the lower surface 201b of upper substrate upper flat plate electrode 205 is arranged, this upper flat plate electrode 205 and 100 of (111) silicon substrates are electrical isolation separation layer 202, and go up electric capacity with the common formation of inertial mass 103 and clearance; Simultaneously, on the upper surface 301a of infrabasal plate lower plate electrode 305 is arranged, 100 of this lower plate electrode 305 and (111) silicon substrates are electrical isolation isolation 302, and constitute electric capacity down jointly with inertial mass 103 and clearance;
E) be distributed with overload protection bump structure 204/304 at least one substrate.
Each limit of the elasticity overarm 104 that described upper surface 102a at (111) silicon substrate 100, lower surface 102b symmetry is made be parallel to respectively and perpendicular to (111) silicon substrate 100 lip-deep＜110 crystal orientation.
The longest edge 103a of the inertial mass 103 on described (111) silicon substrate 100 be parallel to respectively and perpendicular to (111) silicon substrate 100 lip-deep＜110 crystal orientation.
The width 103b that the thickness of described elasticity overarm 104 is hung oneself from a beam less than elasticity, and much smaller than inertial mass thickness.
The thickness of described elasticity overarm is not less than 5 microns.
Last electric capacity and following electric capacity are symmetrical about with respect to (111) silicon substrate 100 be, and its clearance is the recess of the upper and lower surface 102a/102b of the recess of the recess of upper substrate lower surface 201b or infrabasal plate upper surface 301a or (111) silicon substrate 100.
On the described inertial mass 103 damping via-hole array 105 is arranged.
The present invention makes by following key step to realize:
A) form recess at the upper surface 102a of (111) silicon substrate 100 or the lower surface 201b of upper substrate 200,, and form overload protection salient point 204 as the electric capacity clearance; Form recess at the lower surface 102b of (111) silicon substrate 100 or the upper surface 301a of infrabasal plate 300,, and form overload protection salient point 304 as the electric capacity clearance;
B) on (111) silicon substrate 100 corresponding to aforementioned all recess area, carry out double-sided alignment perpendicular to silicon substrate upper surface 102a, lower surface 102b and be etched to desired depth, form going up restriction groove 110a and limiting groove 110b down of edge＜110〉crystal orientation in symmetric position;
C) deposit passivation layer covers the upper and lower surface 102a/102b of (111) silicon substrate 100, and fills bottom surface and side that corrosion limits groove 110a/110b up and down;
D) be etched to desired depth perpendicular to (111) silicon substrate 100 lower surface 102b, form be parallel to edge＜110 of restriction groove 110b down the erosion grooves 113 in crystal orientation, its trenched side-wall along＜110〉crystal orientation is (110) crystal face; Simultaneously, this erosion grooves bottom surface and upper surface distance is not more than the restriction gash depth;
E) (110) the crystal face sidewall in the erosion grooves 113 is carried out chemical anisotropic etch, until its lateral encroaching width greater than the elasticity 104 required width of hanging oneself from a beam; Then, remove the lower surface passivation layer;
F) the upper surface 301a at infrabasal plate 300 forms lower plate electrode 305; Lead-in wire electrode 306 under infrabasal plate 300 surfaces form;
G) the lower surface 102b with (111) silicon chip substrate 100 aims at bonding with the upper surface 301a of infrabasal plate 300, constitutes electric capacity down with (111) substrate 100 and clearance;
H) lead-in wire electrode 106 in the upper surface 102a of (111) silicon chip substrate 100 forms;
I) vertical (111) silicon chip substrate 100 upper surface 102a connect the deep erosion of substrate, form inertial mass 103, at least one pair of elasticity overarm 104, damping via-hole array 105, frame 101;
J) the lower surface 201b at upper substrate 200 forms upper flat plate electrode 205; Form lead-in wire electrode 206 on upper substrate 200 surfaces;
K) the upper surface 102a with (111) silicon chip substrate 100 aims at bonding with the lower surface 201b of upper substrate 200, reaches with (111) substrate 100 and goes up upward electric capacity of gap formation;
L), realize the separation of sensor chip through scribing process.
The described length that goes up the crystal orientation, edge (110) of restriction groove 110a and following restriction groove 110b is far longer than its width, and simultaneously, the length in crystal orientation, the edge of described erosion grooves 113 (110) is far longer than its width.
This sensor is perpendicular to the external acceleration of (111) silicon substrate 100 surface direction, and can closed loop detect.
See also shown in the accompanying drawing 1,2,3,4, accompanying drawing 1 is the whole sectional schematic diagram of micro-machine acceleration transducer of the present invention, and this sensor is made up of (111) silicon substrate 100, upper substrate 200 and infrabasal plate 300, is the first-selected structure of present embodiment.Fig. 2 a is the vertical view of (111) silicon substrate 100, and Fig. 2 b is (111) silicon substrate 100 sectional drawings along A-A ' transversal; Fig. 3 a is the vertical view of upper substrate 200, and Fig. 3 b is the sectional drawing of upper substrate 200 along B-B ' transversal; Fig. 4 a is the vertical view of infrabasal plate 300, and Fig. 4 b is the sectional drawing of infrabasal plate 300 along C-C ' transversal.
Shown in Fig. 2 a, 2b, (111) the upper surface 102a lower surface 102b of silicon substrate 100 is formed with and is parallel to＜110〉crystal orientation elasticity overarms 104 that form, (104a of upper surface and the 104b of lower surface), these elasticity overarms 104 couple together inertial mass 103 and frame 101 via middle anchor point 107a and bight 107b, damping via-hole array 105 perpendicular to (111) silicon substrate 100 is arranged on the inertial mass 103, and the upper surface 102a of (111) silicon substrate 100 goes up the middle lead-in wire electrode 106 that forms.The thickness of elasticity overarm 104 is not less than 5 microns, but much smaller than the thickness of inertial mass 103.The longest edge 103a of inertial mass 103, broadside 103b be parallel to respectively and perpendicular to＜110 the crystal orientation.
Shown in Fig. 3 a, 3b; the lower surface 201b of upper substrate 200 is formed with upper recess 203; overload protection salient point 204 structure upper flat plate electrodes 205 in the upper recess 203; electrical isolation separation layer 202 on the lower surface 201b of upper substrate 200, and the lead-in wire of going up electrode 206 is arranged on the upper surface 201a of upper substrate 200.
Shown in Fig. 4 a, 4b; the upper surface 301a of infrabasal plate 300 is formed with lower concave part 303; overload protection salient point 304 structures and lower plate electrode 305 in the lower concave part 303; electrical isolation separation layer 302 on the upper surface 301a of infrabasal plate 300, and lead-in wire electrode 306 is down arranged on the lower surface 301b of infrabasal plate 300.
See also shown in the accompanying drawing, be the manufacture craft flow process sectional drawing of (111) of the present invention monocrystalline silicon substrate, its manufacturing process flow mainly comprises following processing step:
(1) the manufacture craft flow process of (111) monocrystalline silicon substrate 100 (consult accompanying drawing 5a～5f):
A) select (111) monocrystalline silicon substrate 100;
B) form upper recess 203 at the upper surface 102a of (111) silicon substrate 100 or the lower surface 201b of upper substrate 200,, and form overload protection salient point 204 as the electric capacity clearance; Go up formation lower concave part 302 at the lower surface 102b of (111) silicon substrate 100 or the upper surface 301a of infrabasal plate 300,, and form overload protection salient point 304 as the electric capacity clearance;
C) on (111) silicon substrate 100 corresponding to aforementioned all recess area, carry out double-sided alignment perpendicular to upper surface 102a and lower surface 102b and be etched to desired depth t0, form along what＜110〉crystal orientation length was far longer than width in symmetric position and go up restriction groove 110a and restriction groove 110b down;
D) upper surface 102a and the lower surface 102b at (111) silicon substrate 100 forms passivation layer 111a and 111b, passivating material top filling system groove 110a and restriction groove 110b simultaneously down. Passivation layer 111a and 111b can be thermal oxidation silicon (SiO
2) film, also can be deposition Si
3N
4Film etc., the corrosion rate of these passivating materials in chemical anisotropic etch solution is very little, can the protective substrate surface, limit trench bottom surfaces and side up and down, corrosion process is controlled and limited.
E) be etched to desired depth perpendicular to (111) silicon substrate 100 lower surface 102b, form along＜110〉crystal orientation, be parallel to the erosion grooves 113 that the length of restriction groove 110b down is far longer than width, its trenched side-wall along＜110〉crystal orientation is (110) crystal face; Simultaneously, this erosion grooves bottom surface and upper surface are not more than restriction gash depth t0 apart from t1;
F) utilize alkaline corrosion liquid such as KOH aqueous solution that (110) crystal face sidewall of erosion grooves 113 is carried out chemical anisotropic etch, until its lateral encroaching width greater than the elasticity 104 required width W of hanging oneself from a beam; Then, remove lower surface passivation layer 111b;
(2) the manufacture craft flow process of upper substrate (consult accompanying drawing 6a～6e):
A) select silicon substrate as upper substrate 200, but be not limited to silicon substrate, also can select glass substrate etc. for use.
B) at the lower surface 201b of upper substrate 200, utilize alkaline corrosion liquid such as KOH aqueous solution that silicon is corroded, form upper recess 203 and overload protection salient point 204.But be not limited to the corrosion of alkaline corrosion liquid, also can utilize reaction ion deep etching (DRIE) technology that silicon is carried out etching.
C) form thermal oxidation silicon (SiO at upper surface 201a
2) layer, as electrical isolation separation layer 202.This insulation course also can be deposition Si
3N
4Layer etc.
D) form the upper flat plate electrode 205 of aluminium (Al) materials in upper recess 203.The material of this upper flat plate electrode 205 also can be gold (Au) or other conductive film material.
E), form the electrode 206 that goes between of going up of aluminum at the upper surface 201a of upper substrate 200.Should go up lead-in wire electrode 206 and also can adopt gold (Au) or other conductive film materials, also can choose other positions of upper substrate 200.
(3) the manufacture craft flow process of infrabasal plate (consult accompanying drawing 7a～7e):
A) select silicon substrate as infrabasal plate 300, but be not limited to silicon substrate, also can select glass substrate etc. for use.
B) at the upper surface 301a of infrabasal plate 300, utilize alkaline corrosion liquid such as KOH aqueous solution that silicon is corroded, form lower concave part 303 and overload protection salient point 304.But be not limited to the corrosion of alkaline corrosion liquid, also can utilize reaction ion deep etching (DRIE) technology that silicon is carried out etching.
C) form thermal oxidation silicon (SiO at upper surface 301a
2) layer, as electrical isolation separation layer 302.This insulation course also can be deposition Si
3N
4Layer etc.
D) form the lower plate electrode 305 of aluminium (Al) materials at lower concave part 303.The material of this lower plate electrode 305 also can be gold (Au) or other conductive film material.
E), form the following lead-in wire electrode 306 of aluminum at the lower surface 301b of infrabasal plate 300.This time lead-in wire electrode 306 also can adopt gold (Au) or other conductive film materials, also can choose other positions on the infrabasal plate 300.
(4) substrate integrate and microstructure release manufacture craft flow process (consult accompanying drawing 8a～8h):
A) get (111) silicon substrate 100 of finishing making flow process () and the infrabasal plate 300 of finishing making flow process (three);
B) (111) silicon substrate 100 is aimed at infrabasal plate 300, finished bonding for the first time.Reaching down with (111) substrate 100, the gap constitutes electric capacity down;
C) form the middle lead-in wire electrode 106 of aluminium (Al) material at the upper surface 102a of (111) silicon chip substrate 100.Should the middle material that goes between electrode 106 also can be gold (Au) or other conductive film materials.
D) go up formation etching figure mask layer 401 at the upper surface 102a of (111) silicon chip substrate 100, middle lead-in wire electrode 106, passivation layer 111a.
E) utilize deep reaction ion etching (DRIE) technology, the etching of determining according to mask layer 401, vertical etching (111) silicon chip substrate 100, until penetrating whole base plate, form inertial mass 103, elasticity overarm 104 (104a of upper surface and the 104b of lower surface), frame 101, damping via-hole array 105 etc., realize the release of microstructure, remove the passivation layer 111a on the upper surface 102a.Finish the substrate of integrating for the first time 500.
F) get the upper substrate 200 of finishing making flow process (two).
G) get the substrate 500 of finishing the integration first time.
H) upper substrate 200 is aimed at substrate 500, finished bonding for the second time.
I), realize the separation of sensor chip through scribing process.
By the above processing step, produce a kind of micro-machine acceleration transducer that the present invention relates to based on (111) silicon.
One of the critical process that present embodiment relates to a kind of method for making of the micro-machine acceleration transducer based on (111) silicon is the chemical anisotropic etch of monocrystalline silicon, this is the maturation of micromechanics electronic system (MEMS) technical field and one of important manufacturing process is consulted accompanying drawing 9 its principle is described.The chemical anisotropy rot etching technique of so-called monocrystalline silicon refers in chemical corrosion solution, and the corrosion rate of silicon is relevant with the si surface orientation that is corroded (crystal plane direction), and this is because the atomic density of different crystal surfaces is different with dangling bonds density.Silicon (111) crystal face has the highest atomic density and minimum dangling bonds density, is to corrode crystal face slowly therefore; (100) and (110) crystal face then be to corrode crystal face soon.For example, in potassium hydroxide (KOH) etchant solution, generally speaking, the corrosion rate of (110) and (111) crystal face compares greater than 100, even can reach 170 under certain condition.The geometry that monocrystalline silicon forms through chemical anisotropic etch normally corrodes crystal face and fast corrosion crystal face slowly by these and constitutes and determine.Fig. 9 a, 9b be respectively (100) and＜110〉crystal orientation monocrystalline silicon substrate on, be mask with SiO2 or Si3N4, the silicon substrate in the corrosion window is separately carried out the result schematic diagram of chemical anisotropic etch.In Fig. 9 c, at first the corrosion window on the monocrystalline silicon substrate in (111) crystal orientation is carried out vertical etching, form groove, carry out chemical anisotropic etch as Fig. 9 d and then to its sidewall silicon, because this sidewall is (110) crystal face, so sideetching is very fast, then corrode very slow to bottom surface (111) crystal face.In addition, passivating material corrosion rates therein such as thermal oxidation silicon (SiO2), Si3N4 are also very little, can be used as etching mask or barrier material.The chemical anisotropic etch solution of monocrystalline silicon also has TMAH (Tetramethylammonium hydroxide), EPW (catechol, water and ethylenediamine mixed solution) to wait other alkaline aqueous solutions except that the KOH aqueous solution.
In the present invention, at least one pair of elasticity overarm 104 (104a of upper surface and the 104b of lower surface) on (111) silicon substrate 100 utilize the chemistry of (111) silicon substrate respectively to make to corrosive property.The degree of depth t0 that limits groove 110a and 110b up and down along＜110〉crystal orientation can be precisely controlled in etching process, and the passivating material that these restrictions are filled in grooves (thermal oxidation silicon SiO2, or deposition Si3N4 etc.) subsequently, play the hang oneself from a beam effect of 104 thickness of elasticity of controlling in by same lateral encroaching process of carrying out along＜110〉crystal orientation erosion grooves 113.The corrosion process of beginning is just as accompanying drawing 9c; but after the arrival of lateral encroaching forward position limits groove 110a and 110b up and down; cross the corrosion of restriction behind the groove; at thickness direction; promptly the corrosion rate along (111) crystal face is very slowly; the thickness of elasticity overarm 104 just can be precisely controlled like this, and can form symmetrical elasticity 104 microstructures of hanging oneself from a beam in the upper and lower surface of (111) silicon substrate 100 simultaneously.Yardstick such as the thickness of elasticity overarm 104 and site symmetry are for the dynamic response of device, and as sensitivity, frequency response etc., device performance is all significant.
Because among the present invention, elasticity overarm 104 and connected inertial mass 103 and frame 101 etc. are identical at material in nature, from same (111) silicon substrate, form, can at utmost reduce even eliminate the lattice damage, stress and the stress gradient that cause by processes such as injection, doping to device performance, as the influence of zero stability, temperature drift etc.
See also shown in the accompanying drawing 10, the basic functional principle of a kind of micro-machine acceleration transducer based on (111) silicon that the present invention relates to is described.Be depicted as the partial enlarged drawing of the micro mechanical structure of this acceleration transducer as Figure 10 a, inertial mass 103 and upper flat plate electrode 205 constitute upper flat plate capacitor C 1 by air dielectric; And inertial mass 103 passes through air dielectric with lower plate electrode 305, constitutes capacity plate antenna C2 down.Initial static capacitance C10 and the C20 of C1 and C2 are initial distance d10 and the d20 decisions by the relative area between inertial mass 103 and last lower plate electrode 205 and 305 and inertial mass 103 and last lower plate electrode 205 and 305.
Shown in Figure 10 b, when sensor is subjected to having along perpendicular to the external acceleration g of orientation substrate (in the accompanying drawing be example with the downward direction) time, according to Newton second law: F=M*a, inertial mass 103 will be subjected to along the inertial force of the direction of external acceleration g, cause that elasticity overarm 104a and 104b bend to equidirectional, equidirectional displacement takes place in inertial mass 103 simultaneously, and the distance between last lower plate electrode 205 and 305 is changed to d1 and d2 respectively, at this moment
D1＞d10, and d2＜d20
Simultaneously, | d1-d10|=|d2-d20|
Therefore, respective change all takes place in the value of electric capacity C1 and C2 up and down.According to the deflection of elasticity overarm 104, i.e. physical relation between the displacement of inertial mass 103 and suffered inertial force, the variation of the capacitance by detection C1 or C2 can obtain the information of external acceleration g, as size, frequency etc.The value of capacitor C 1 and C2 and the detection of variation thereof can realize corresponding to the interface circuit of the following lead-in wire electrode 306 on the infrabasal plate 300 corresponding to upward lead-in wire electrode 206 and the 3-on the upper substrate 200 corresponding to the middle lead-in wire electrode 106 on (111) silicon substrate 100,2-by connectivity port 1-.So-called open loop detecting method that Here it is.
Utilize open loop detecting method, require lower, more convenient for sensor construction.In fact, only need the structure after (111) silicon substrate 100 and infrabasal plate 300 are finished substrate integration for the first time, just can obtain the information of external acceleration g by the variation that detects C2.But the raising that open loop detects in performances such as the precision that detects, bandwidth is subjected to more restriction.A kind of micro-machine acceleration transducer based on (111) silicon that the present invention relates to can be operated in the closed loop detection mode.As Figure 10 b, after the external acceleration g effect in being subjected to figure, inertial mass 103 is subjected to displacement to infrabasal plate 300 directions, at this moment,
D1＞d10, and d2＜d20
Simultaneously, | d1-d10|=|d2-d20|
So-called closed loop detection mode applies feedback electrostatic force between inertial mass 103 and upper flat plate electrode 205, its size is enough to inertial mass 103 is retracted its initial position.Like this, inertial mass 103 is replied initial position under the acting in conjunction of external acceleration inertial force and feedback electrostatic force.The output voltage of closed-loop system is proportional to by measuring acceleration, so-called closed loop detection method that Here it is.The value of capacitor C 1 and C2 and the detection of variation thereof and feedback electrostatic force apply and control can by in the connectivity port 1,2 and 3 interface circuit realize.Closed-loop sensors has plurality of advantages, and as precision height, highly sensitive, good linearity, range are big, and dynamic perfromance is good, and promptly constant is little the time, the natural frequency height.High-acruracy survey is used, and generally requires acceleration transducer to adopt the closed loop detection mode.The micro-machine acceleration transducer based on (111) silicon that the present invention relates to can realize that closed loop detects.
The width of elasticity overarm 104 can suppress the influence of the external acceleration of other direction better greater than its thickness, also promptly cross-couplings is had good inhibitory effect; Simultaneously, 104 pairs of cross-linked inhibition of a pair of above elasticity overarm of the balanced configuration up and down of inertial mass 103 also have positive effect.Overload protection salient point 204 and 304 is subjected to forced speed at inertial mass 103 and does the time spent, can limit inertial mass 103 in the displacement range perpendicular to the substrate surface direction, is the powerful guarantee of device reliability.Damping via-hole array 105 can be used for to inertial mass 103 damping at the volley to regulate and control, and the dynamic response of device architecture is played an important role.
As mentioned above, a kind of micro-machine acceleration transducer involved in the present invention based on (111) silicon, have structural symmetry good, be beneficial to characteristics such as closed-loop control, precision height.Can on monolithic (111) silicon substrate, make the crucial microstructure of the sensor that needs many silicon wafer to manufacture usually, and symmetry of device architecture, critical dimension etc. can realize accurate control, and this all helps the improvement of device architecture dynamic perfromance and the raising of device performance.
See also shown in the accompanying drawing 11, another embodiment of the present invention relates to a kind of three Orthogonal Composite of micro-machine acceleration transducer based on (111) silicon.On three identical among preceding embodiment substrate integrate bodies 600, produce the sensor combinations that can detect three external acceleration of orthogonal directions respectively simultaneously, promptly detect Z to the sensor 601 of acceleration, detect Y to the sensor 602 of acceleration with detect the sensor 603 of X to acceleration.For simplicity's sake, among Figure 11, the upper substrate of three substrate integrate bodies 600 does not draw, and is the vertical view from (111) silicon substrate 100 tops.
In preceding embodiment, sensor 601 mainly is included in frame 101, inertial mass 103, elasticity overarm 104 (104a of upper surface and the 104b of lower surface), the damping via-hole array 105 on (111) silicon substrate 100. Sensor 602 and 603 structure, mainly be included in (111) but electric capacity broach 613a and the electric capacity broach 614a on the 613b fixed electrode and 614b, inertial mass 615a and 615b on fixed electorde 610a on the silicon substrate 100 and 610b, movable electrode 611a and 611b, elastic beam 612a and 612b, the fixed electorde.The 620th, the separation groove between sensor is to guarantee the isolation between sensor.
The principle of work of sensor 601 illustrates in preceding embodiment.Sensor 602 and 603 is typical capacitance detecting type acceleration transducers, but be not limited to this structure, external acceleration can obtain by detecting electric capacity broach 612 and 613 capacitance variations, just because the direction of motion difference of inertial mass, and the external acceleration of detection different directions, its principle is identical.
On the method for making of sensor 601,602,603 in the present embodiment, the making of sensor 601 is identical with preceding embodiment, sensor 602 and 603 inertial mass, fixed electorde and upper comb dent thereof, movable electrode and structures such as upper comb dent, elastic beam thereof can form all that etching forms in the same processing step of inertial mass in the sensor 601, elasticity overarm, damping via-hole array etc. in etching.Therefore, three micro-machine acceleration transducer combinations that detect the external acceleration of quadrature can realize integrated manufacturing.
As mentioned above, a kind of micro-machine acceleration transducer involved in the present invention based on (111) silicon, as a kind of Z direction (perpendicular to substrate surface) acceleration transducer, can with other typical X direction, Y direction (being parallel to substrate surface) acceleration transducer, realize integrated manufacturing.The orthogonality of three direction acceleration transducers is by the decision of the lithographic accuracy of microelectromechanical systems (MEMS) manufacturing process, can obtain fine assurance, for reducing quadrature bias, reducing to calibrate cost etc. positive effect is all arranged.Simultaneously, the integrated making on same substrate helps the miniaturization of the reducing of package dimension, interface circuit, finally can realize three integrated acceleration transducer micro-systems of miniaturization.
Claims (9)
1, a kind of micro-machine acceleration transducer based on (111) silicon is characterized in that:
Sensor is to be made of a slice (111) monocrystalline silicon substrate and each a slice of upper and lower substrate, and
A) inertial mass, at least one pair of elasticity overarm, frame are arranged on (111) silicon substrate; The overarm of this elasticity be a symmetry up and down with respect to (111) silicon substrate, and the end that every elasticity is hung oneself from a beam is connected on the inertial mass, and the other end is connected on the frame;
B) inertial mass can be done the motion perpendicular to (111) silicon substrate surface direction under the support of elasticity overarm;
C) (111) silicon substrate is connected with upper substrate and infrabasal plate bonding by frame;
D) on the lower surface of upper substrate the upper flat plate electrode is arranged, isolate for electrical isolation between this upper flat plate electrode and (111) silicon substrate, and go up electric capacity with the common formation of inertial mass and clearance; Simultaneously, on the upper surface of infrabasal plate lower plate electrode is arranged, isolate for electrical isolation between this lower plate electrode and (111) silicon substrate, and constitute electric capacity down jointly with inertial mass and clearance;
E) be distributed with the overload protection bump structure at least one substrate.
2, a kind of micro-machine acceleration transducer based on (111) silicon according to claim 1 is characterized in that:
Each limit of the elasticity overarm that described upper and lower surface symmetry at (111) silicon substrate is made be parallel to respectively and perpendicular to (111) silicon substrate lip-deep＜110〉crystal orientation.
3, a kind of micro-machine acceleration transducer based on (111) silicon according to claim 1 is characterized in that:
The longest edge of the inertial mass on described (111) silicon substrate be parallel to respectively and perpendicular to (111) silicon substrate lip-deep＜110〉crystal orientation.
4, a kind of micro-machine acceleration transducer based on (111) silicon according to claim 1 is characterized in that:
The width that the thickness of described elasticity overarm is hung oneself from a beam less than elasticity, and much smaller than inertial mass thickness.
5, a kind of micro-machine acceleration transducer based on (111) silicon according to claim 1 is characterized in that:
The thickness of described elasticity overarm is not less than 5 microns.
6, a kind of micro-machine acceleration transducer based on (111) silicon according to claim 1 is characterized in that:
Last electric capacity and following electric capacity are symmetrical about with respect to (111) silicon substrate be, and its clearance is the recess of the upper and lower surface of the recess of the recess of upper substrate lower surface or infrabasal plate upper surface or (111) silicon substrate.
7, a kind of manufacture method by the described micro-machine acceleration transducer based on (111) silicon of claim 1 is characterized in that:
Its manufacture method may further comprise the steps:
A) form recess at the upper surface of (111) silicon substrate or the lower surface of upper substrate,, and form the overload protection salient point as the electric capacity clearance; Form recess at the lower surface of (111) silicon substrate or the upper surface of infrabasal plate,, and form the overload protection salient point as the electric capacity clearance;
B) on (111) silicon substrate corresponding to aforementioned all recess area, carry out double-sided alignment perpendicular to the upper and lower surface of silicon substrate and be etched to desired depth, symmetric position form along＜110〉crystal orientation go up restriction groove and restriction groove down;
C) deposit passivation layer covers the upper and lower surface of (111) silicon substrate, and fills bottom surface and side that corrosion limits groove up and down;
D) be etched to desired depth perpendicular to (111) silicon substrate lower surface, form be parallel to edge＜110 of restriction groove down the erosion grooves in crystal orientation, its trenched side-wall along＜110〉crystal orientation is (110) crystal face; Simultaneously, this erosion grooves bottom surface and upper surface distance is not more than the restriction gash depth;
E) (110) the crystal face sidewall in the erosion grooves is carried out chemical anisotropic etch, until its lateral encroaching width greater than the elasticity required width of hanging oneself from a beam; Then, remove the lower surface passivation layer;
F) upper surface at infrabasal plate forms lower plate electrode; Electrode goes between under the infrabasal plate surface forms;
G) lower surface of (111) silicon chip substrate is aimed at bonding with the upper surface of infrabasal plate, constitute electric capacity down with (111) substrate and clearance;
H) lead-in wire electrode in the upper surface of (111) silicon chip substrate forms;
I) vertical (111) silicon chip upper surface of base plate connects the deep erosion of substrate, forms inertial mass, at least one pair of elasticity overarm, damping via-hole array, frame;
J) lower surface at upper substrate forms the upper flat plate electrode; Electrode goes between on upper substrate surface forms;
K) upper surface of (111) silicon chip substrate is aimed at bonding with the lower surface of upper substrate, and the clearance between (111) substrate and upper substrate constitutes upward electric capacity;
L), realize the separation of sensor chip through scribing process.
8, the manufacture method of a kind of micro-machine acceleration transducer based on (111) silicon according to claim 7 is characterized in that:
The described restriction groove and edge＜110 of restriction groove down of going up〉length in crystal orientation is far longer than its width, simultaneously, the edge of described erosion grooves＜110〉length in crystal orientation is far longer than its width.
9, a kind of detection method by the described micro-machine acceleration transducer based on (111) silicon of claim 1 is characterized in that:
This sensor is perpendicular to the external acceleration of (111) silicon substrate surface direction, and can closed loop detect.
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| CN103575260B (en) * | 2012-07-19 | 2017-06-16 | 水木智芯科技（北京）有限公司 | A kind of gyroscope and its machining manufacture |
| CN103234669B (en) * | 2013-03-29 | 2015-04-01 | 厦门大学 | Pressure sensor utilizing electrostatic negative stiffness and production method of pressure sensor |
| CN104296784B (en) * | 2013-07-19 | 2017-02-15 | 中国科学院地质与地球物理研究所 | MEMS detection device and manufacturing technology thereof |
| CN104914273B (en) * | 2013-07-30 | 2018-05-22 | 苏州固锝电子股份有限公司 | For detecting the sensor of three-dimensional acceleration |
| CN104880572B (en) * | 2013-07-30 | 2018-12-14 | 苏州固锝电子股份有限公司 | MEMS high-range acceleration transducer part |
| CN109470229A (en) * | 2018-10-25 | 2019-03-15 | 北京航天控制仪器研究所 | A kind of outer stop configurations in silicon micro-inertia sensor shock resistance face |
| JP7383978B2 (en) * | 2019-10-23 | 2023-11-21 | セイコーエプソン株式会社 | Physical quantity sensors, electronic devices and moving objects |
| CN113494908A (en) * | 2020-03-19 | 2021-10-12 | 华为技术有限公司 | MEMS inertial sensor, inertial measurement unit and inertial navigation system |
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