CN100556238C - The method of welding electronic part on substrate - Google Patents
The method of welding electronic part on substrate Download PDFInfo
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- CN100556238C CN100556238C CNB2006100844636A CN200610084463A CN100556238C CN 100556238 C CN100556238 C CN 100556238C CN B2006100844636 A CNB2006100844636 A CN B2006100844636A CN 200610084463 A CN200610084463 A CN 200610084463A CN 100556238 C CN100556238 C CN 100556238C
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- solder joint
- substrate
- scolder
- metal level
- temperature
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Abstract
A kind of welding one electronic component comprises forming a metal level on substrate in the method for a substrate; Provide a scolder on metal level; Carry out a heating schedule, make scolder change solder joint into to connect substrate and electronic component, wherein, some material of metal level is to introduce solder joint in this heating schedule, and the solidus temperature of solder joint is improved.The present invention also provides the electronic building brick that utilizes the method made.
Description
Technical field
The invention relates to a kind of soft soldering method, especially about the method for the solidus temperature that can improve solder joint, and the made electronic building brick of the method.
Background technology
Solder is a connecting technology important in the electronics industry.Solderable material generally is to select the low and ductility good metal of fusing point, is the most general scolder with ashbury metal wherein.In the solder manufacture craft, scolder contacts with base material to be connected, and the base material of understanding some usually fuses in the weldering soup, and is easy to weld on the interface of soup and base material to be connected generation Jie metal (intermetallic phase) mutually.
The fusing of alloy has fusion temperature and complete fusion temperature at the beginning usually, and it defines a temperature range, and the beginning fusion temperature is called solidus temperature, and fusion temperature is called liquidus temperature fully.When welding with traditional solder technology, some composition in the base material may fuse into weldering soup, and the solidus temperature of formed solder joint or liquidus temperature are descended.For example solidus temperature (being eutectic temperature) is 227 ℃ a Sn-Cu eutectic solder, and when the Ag composition in the base material fused into this scolder, the solidus temperature of the solder joint that forms can drop to 217 ℃.And for example silver content is less than Sn-Ag the eutectic solder of 3.5wt%, and the Ag composition in base material fuses into this scolder, and the liquidus temperature of the solder joint that forms can descend.Common for another example high temperature Sn-5wt%Sb scolder, it contacts with base material Ag and makes Ag fuse into this scolder, and the solidus temperature of the solder joint that forms is descended.
The solidus temperature of solder joint descends has harmful effect to stage welding procedure.For example, in two stage welding procedures, for avoiding the solder joint fusing of phase I, the operating temperature of second stage can not be higher than the curing line temperature of the solder joint of phase I.Yet conventional art as the aforementioned, its base material can fuse into weldering soup and the curing line temperature of solder joint is descended.This promptly causes the operating temperature of second stage welding wayward, and the quality of remote-effects product.Therefore, be necessary to provide a kind of welding method of innovation to solve the problem that conventional art produces.
Summary of the invention
The present invention provides a kind of formation one solder joint in the method for a substrate promptly at this problem, is included in to form a metal level on the substrate, and in a heating schedule this metal level is partly or wholly introduced in the weldering soup to form solder joint.This heating schedule links a substrate and an electronic component, and therefore promotes the solidus temperature of solder joint.
At an embodiment, the invention provides a kind of welding one electronic component in the method for a substrate, electronic component has a pin, and the method comprises: form a metal level on substrate; Provide a scolder on metal level; Carry out one first heating schedule, make scolder change a solder joint into, and a part of material of metal level is incorporated in the solder joint, make the solidus temperature of the solidus temperature of solder joint greater than scolder; And binding pin and solder joint.
Another aspect of the present invention provides a kind of formed electronic building brick of said method that utilizes.At an embodiment, the invention provides a kind of electronic building brick with a solder joint, comprise a substrate, this solder joint is positioned at this substrate top; One metal level, between substrate and solder joint, metal level contacts with solder joint; Wherein, solder joint is included in a part of material of the metal level of being introduced in the heating process, causes the solidus temperature of solder joint to be higher than the solidus temperature of the solder joint when not introducing this part material.
Description of drawings
Fig. 1 to Fig. 4 is according to the present invention, illustration one circuit board, its substrate and its electronic component heats and the schematic diagram of each step of welding procedure.
The primary clustering symbol description
100 circuit boards, 110 substrates
111 surface-treated layers, 120 electronic components
121 pins, 210 metal levels
220 scolders, 320 solder joints
Embodiment
Below with reference to accompanying drawing demonstration the preferred embodiments of the present invention.Should note presenting the present invention for clear, each in the accompanying drawing layer and each assembly are not the scale according to material object, and also omit traditional assembly, associated materials and treatment technology thereof for avoiding fuzzy content of the present invention, below illustrating.
Fig. 1 to Fig. 4 is soldered to substrate to form the method for an electronic building brick according to the present invention's demonstration with an electronic component.This example is with the preferred embodiment of circuit board as electronic building brick.As shown in Figure 1, provide a circuit board 100, comprise a substrate 110 and will be connected to an electronic component 120 of substrate 110.Substrate 110 generally has pattern or the circuit (not shown) that is made of metal material.Can optionally comprise a surface-treated layer 111 on the substrate 110, it is as preventing scolder and substrate 110 surperficial over-reactive barrier layers, or as the wettable layer of the wettability of 110 of increase scolder and substrates.Common surface treatment layer material such as Au, Cu, Ni, Pd etc.Electronic component 120 can be a resistor, capacitor or IC chip, and it comprises a pin 121, preferably makes with metal.Similarly, also can optionally add surface-treated layer 111 on the surface of pin 121.
Then, as shown in Figure 2, form a metal level 210 on substrate 110, the method for formation is to electroplate to good.Then, apply a scolder 220 again on substrate 110, and it is contacted with metal level 210.It should be noted that to be the solidus temperature of the solder joint that will form after improving, the composition of metal level 210 should cooperate with scolder 220.For example when scolder 220 comprises Sn and Sb, preferably can Sn as metal level 210; When and for example scolder 220 comprises Se, preferably can Sn as metal level 210.In addition, the insider also should understand in the scolder 220 and can optionally add other compositions such as scaling powder or interfacial agent.
Then, as shown in Figures 3 and 4, carry out first heating schedule and first welding procedure, make this scolder 220 change the solder joint 320 that links pin 111 and substrate 110 into, and with a part of material of metal level 210 or all introduce in the solder joint 320, so that the solidus temperature of solder joint 320 is greater than the solidus temperature of scolder 220, and link pins 111 and substrates 110, so that metal pattern on the substrate 110 or circuit and pin 111 electricity link to each other by solder joint 320.Also have a metal remained layer 210 on Fig. 3 display base plate 110, its representative is only introduced a part of material of metal level 210 in the solder joint 320.Do not had metal level 210 on Fig. 4 display base plate 110, on behalf of the material of metal level 210, it all introduce in the solder joint 320.In addition, should notice that method proposed by the invention can't form Jie's metal mutually on the interface of scolder 220 and substrate 110, metal level 210 still keeps solid solution phase (soild solution phase) after fusing into weldering soup (being melting scolder 220).
Above-mentioned first heating schedule and first welding procedure can optionally carry out second heating schedule and second welding procedure after finishing.As described above, should note controlling the operating temperature of second heating schedule, to avoid with formed solder joint 320 fusings of first heating schedule.Because the present invention has been the curing line temperature that is higher than scolder 220 with the curing line temperature increase of the formed solder joint 320 of first heating schedule, the operating temperature of second heating schedule do not have traditional situation that offsets downward, so just can brightly be controlled at below the curing line temperature of scolder 220 definitely.In other words, an advantage of the present invention promptly is to make the operating temperature of second heating schedule to control easily.
In addition, the curing line temperature of solder joint 320 also can be promoted to the liquidus temperature that is higher than scolder 220 by the composition of adjusting metal level 210, so will help to make second heating schedule that broad operating temperature range is arranged, and this is another advantage of the present invention.
The unrestricted example that below provides solidus temperature of the present invention to promote.
Example one
The Sn-5wt%Sb scolder of 200mg is seated on the pure Sb sheet, then its integral sealing is being respectively in the quartz ampoule of 3mmx4mm at interior external diameter.(DTA) is heated to 265 ℃ with the scan-type thermal analyzer, holds temperature and reduces to room temperature after 5 minutes, and observe and measure its molten temperature region.Then, it is warming up to 265 ℃ again, similarly holds temperature and reduce to room temperature after 5 minutes, and observe and measure its molten temperature region.This twice measured temperature range is respectively 240 ℃, 244 ℃, and 250 ℃, 257 ℃.Therefore, can find out that solidus temperature is promoted to 250 ℃ from 240 ℃; Liquidus temperature then is promoted to 257 ℃ from 244 ℃.
Example two
The Sb layer of the about 50 μ m of plating thick on the Ag substrate of 500 μ m.Get on the Sb layer that the Sn-5wt%Sb scolder places this substrate, and carry out 260 ℃ of reflows, to form solder joint.Then, will have the substrate of this solder joint to be seated under 244 ℃, observe this solder joint 1 hour, the result does not have melting phenomenon to produce.
Example three
The Ag layer of the about 100 μ m of plating thick on the Si substrate, and then on this Ag layer, electroplate the Sb layer of about 50 μ m.Get on the Sb layer that the Sn-5wt%Sb scolder places this substrate, and carry out 260 ℃ of reflows, to form solder joint.Then, will have the substrate of this solder joint to be seated under 244 ℃, observe this solder joint 1 hour, the result does not have melting phenomenon to produce.
Example four
The Se clipped wire of 500mg is seated on the pure Te sheet, then its integral sealing is respectively in the quartz ampoule of 3mmx4mm at interior external diameter.(DTA) is heated to 225 ℃ with the scan-type thermal analyzer, holds temperature and reduces to room temperature after 5 minutes, and observe and measure its fusing point (the Se clipped wire is for alloy, so there is not temperature range).It is warming up to 265 ℃ again, similarly holds temperature and reduce to room temperature after 5 minutes.This twice measured fusing point/temperature range is respectively 221 ℃ (being the fusing point of Se metal) and 225 ℃, 232 ℃.225 ℃-232 ℃ of temperature ranges that records are for the second time represented Te, and some fuses among the Se, and solidus temperature is promoted to 225 ℃ from 221 ℃.
Example five
Be placed on the Se clipped wire of 200mg on the pure Te substrate and carry out 260 ℃ of reflows, to form solder joint.Then, will have the substrate of this solder joint to be seated under 221 ℃, observe 1 hour, the result does not have melting phenomenon to produce.
Method of the present invention is applicable to needs solder to finish any electronic building brick that its various spare parts and substrate link mutually.Fig. 1 to Fig. 4 be by circuit board as the electronic building brick method of the present invention of demonstrating, should understand that so indication electronic building brick of the present invention should not exceed with circuit board.
Should notice that method of the present invention is different from the solder that direct employing contains metal layer material of the present invention,, certainly will cause the raising of manufacture craft temperature because if directly adopt this solder.In other words, according to the present invention, the manufacture craft temperature that first heating schedule is fit to is to depend on the original composition of scolder, with afterwards that the temperature that is raised is irrelevant.As shown in Figure 3, it is to occur in after the wetting substrate 110 that metal level 220 fuses into weldering soup, and this moment, scolder 220 formed with the interface of substrate 110, and the raising of weldering soup fusing point can't influence this heating schedule.
The above is the preferred embodiments of the present invention only, is not in order to limit scope of the present invention; All other do not break away from the equivalence of being finished under the spirit disclosed in this invention and changes or modification, all should be included in the scope of the present invention.
Claims (37)
1. method that forms solder joint in substrate comprises:
Form metal level on this substrate;
Provide scolder on this metal level; And
Carry out first heating schedule, make this scolder change this solder joint into, and a part of material of this metal level is incorporated in this solder joint, so that the solidus temperature of this solder joint is greater than the solidus temperature of this scolder,
It is characterized in that the solidus temperature of this solder joint is greater than the liquidus temperature of this scolder.
2. method according to claim 1 is characterized in that, also comprises a surface-treated layer between this substrate and this metal level.
3. method according to claim 2 is characterized in that, this surface-treated layer is to be selected from the group that Au, Cu, Ni, Pd and various combination thereof are formed.
4. method according to claim 1 is characterized in that the liquidus temperature of this solder joint is greater than the liquidus temperature of this scolder.
5. method according to claim 1 is characterized in that this scolder comprises Sn and Sb, and this metal level comprises Sb.
6. method according to claim 5 is characterized in that, the content of the Sb of this scolder is the 5wt% of the total content of Sn and Sb.
7. method according to claim 1 is characterized in that this scolder comprises Se, and this metal level comprises Te.
8. method according to claim 1 is characterized in that, also comprises the solidus temperature that this substrate is placed this scolder, carries out second heating schedule, and does not melt this solder joint.
9. method according to claim 1 is characterized in that, also comprises the liquidus temperature that this substrate is placed this scolder, carries out second heating schedule, and does not melt this solder joint.
10. method according to claim 1 is characterized in that, this metal level is to be formed on this substrate by a plating mode.
11. method according to claim 1 is characterized in that, this first heating schedule is to carry out being higher than under the solidus temperature of this scolder.
12. a welding electronic part is in the method for substrate, this electronic component has pin, and this method comprises:
Form metal level on this substrate;
Provide scolder on this metal level;
Carry out first heating schedule, make this scolder change a solder joint into, and a part of material of this metal level is incorporated in this solder joint, so that the solidus temperature of this solder joint is greater than the solidus temperature of this scolder; And
Link this pin and this solder joint,
It is characterized in that the solidus temperature of this solder joint is greater than the liquidus temperature of this scolder.
13. method according to claim 12 is characterized in that, also comprises a surface-treated layer between this substrate and this metal level.
14. method according to claim 13 is characterized in that, this surface-treated layer is to be selected from the group that Au, Cu, Ni, Pd and various combination thereof are formed.
15. method according to claim 12 is characterized in that, the liquidus temperature of this solder joint is greater than the liquidus temperature of this scolder.
16. method according to claim 12 is characterized in that, this scolder comprises Sn and Sb, and this metal level comprises Sb.
17. method according to claim 16 is characterized in that, the content of the Sb of this scolder is the 5wt% of the total content of Sn and Sb.
18. method according to claim 12 is characterized in that, this scolder comprises Se, and this metal level comprises Te.
19. method according to claim 12 is characterized in that, also comprises the solidus temperature that this substrate is placed this scolder, carries out second heating schedule, and does not melt this solder joint.
20. method according to claim 12 is characterized in that, also comprises the liquidus temperature that this substrate is placed this scolder, carries out second heating schedule, and does not melt this solder joint.
21. method according to claim 12 is characterized in that, this metal level is to be formed on this substrate by plating mode.
22. method according to claim 12 is characterized in that, this first heating schedule is to carry out being higher than under the solidus temperature of this scolder.
23. the electronic building brick with a solder joint comprises:
Substrate, this solder joint are positioned at this substrate top;
Metal level, between this substrate and this solder joint, this metal level contacts with this solder joint;
Wherein, a part of material of this metal level that this solder joint is included in the heating process to be introduced, so that the solidus temperature of this solder joint is higher than the solidus temperature of the solder joint when not introducing this part material,
It is characterized in that the liquidus temperature of this solder joint is higher than the liquidus temperature of the solder joint when not introducing this part material.
24. electronic building brick according to claim 23 is characterized in that, this solder joint comprises Sn and Sb, and this metal level comprises Sb.
25. electronic building brick according to claim 23 is characterized in that, this solder joint comprises Se, and this metal level comprises Te.
26. electronic building brick according to claim 23 is characterized in that, also comprises surface-treated layer between this substrate and this metal level.
27. electronic building brick according to claim 26 is characterized in that, this surface-treated layer is to be selected from the group that Au, Cu, Ni, Pd and various combination thereof are formed.
28. the electronic building brick with solder joint comprises:
Substrate, this solder joint are positioned at this substrate top,
This solder joint metal material of being included in the heating schedule to be introduced wherein causes the solidus temperature of this solder joint to be higher than the solidus temperature of the solder joint when not introducing this metal material,
It is characterized in that the liquidus temperature of this solder joint is higher than the liquidus temperature of the solder joint when not introducing this metal material.
29. electronic building brick according to claim 28 is characterized in that, this solder joint comprises Sn and Sb, and this metal material comprises Sb.
30. electronic building brick according to claim 28 is characterized in that, this solder joint comprises Se, and this metal material comprises Te.
31. electronic building brick according to claim 28 is characterized in that, comprises that also surface-treated layer is between this solder joint and this substrate.
32. electronic building brick according to claim 31 is characterized in that, this surface-treated layer is to be selected from the group that Au, Cu, Ni, Pd and various combination thereof are formed.
33. a circuit board comprises:
Substrate;
Electronic component has pin;
Solder joint is positioned on this substrate, and this pin links by this solder joint and this substrate, and this solder joint metal material of being included in the heating schedule to be introduced wherein causes the solidus temperature of this solder joint to be higher than the solidus temperature of the solder joint when not introducing this metal material,
Wherein the liquidus temperature of this solder joint is higher than the liquidus temperature of the solder joint when not introducing this metal material.
34. circuit board according to claim 33 is characterized in that, this solder joint comprises Sn and Sb, and this metal material comprises Sb.
35. circuit board according to claim 33 is characterized in that, this solder joint comprises Se, and this metal material comprises Te.
36. circuit board according to claim 33 is characterized in that, comprises that also surface-treated layer is between this solder joint and this substrate.
37. circuit board according to claim 36 is characterized in that, this surface-treated layer is to be selected from the group that Au, Cu, Ni, Pd and various combination thereof are formed.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2006100844636A CN100556238C (en) | 2006-05-23 | 2006-05-23 | The method of welding electronic part on substrate |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2006100844636A CN100556238C (en) | 2006-05-23 | 2006-05-23 | The method of welding electronic part on substrate |
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| CN101080142A CN101080142A (en) | 2007-11-28 |
| CN100556238C true CN100556238C (en) | 2009-10-28 |
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| CNB2006100844636A Expired - Fee Related CN100556238C (en) | 2006-05-23 | 2006-05-23 | The method of welding electronic part on substrate |
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| CN102122579A (en) * | 2010-12-08 | 2011-07-13 | 天津理工大学 | Carbon nanotube array photocathode material and preparation method and application thereof |
| CN110662365A (en) * | 2019-09-25 | 2020-01-07 | 安徽熙泰智能科技有限公司 | Micro-display wire welding method and wire welding equipment |
| CN112518160A (en) * | 2020-11-23 | 2021-03-19 | 武汉光迅科技股份有限公司 | Substrate assembly method and system |
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